544750 五、發明說明（1) 發明領域： 諸 本發明係涉及一種半導體晶圓中金屬的檢知方 如用在半導體晶圓中的銅、鋁等。 / 發明背景： :導體晶圓包括半導體材料製成的基材，等金 體:圓ΐΐ芏與基材一起形成導電墊板和線路。此類半導 =半導體材料中致半導體材料電 ：： 影響到產品整體性能。 T攸而 鑒於此，人們希望能夠找到一種方法來判斷金屬I ，的污染程度。美國專測6,14G，131揭示了 塾 =以X射線分析來判斷金屬冑塾板的污染程度。但复 述的測試方法既須耗費大量時間，又要求大量資金_、斤 判斷ί :周知可以用質譜儀分析晶圓的-部分，：而來 1對半導體晶圓的污染程度。然而，為了分離 部分來進行質譜儀分析就不得不損壞晶Β。此外曰，曰 k方法同樣也需要花費大量時間。 者萝Ί Γ:’ ί導體晶圓的製造成本相當高’在測試或 中經常會浪費許多半導體晶圓。因此如付對： 衆日日0再利用也亟待解決。 硬 種處理回收半導體晶圓的方法，冑方法涉及-種 ，其係先將所述金屬軌道和半導體墊板用化學方544750 V. Description of the invention (1) Field of the invention: The present invention relates to a method for detecting a metal in a semiconductor wafer, such as copper, aluminum, etc. used in a semiconductor wafer. / Background of the invention:: Conductor wafers include substrates made of semiconductor materials, and other metals: Round cymbals and substrates together form conductive pads and circuits. This type of semiconducting = semiconductor materials in semiconductor materials: affect the overall performance of the product. In view of this, people hope to find a way to judge the pollution degree of metal I. US special test 6,14G, 131 revealed 塾 = X-ray analysis to determine the degree of pollution of metal rhenium plates. However, the repeated test method requires a lot of time and requires a lot of money. Judgment: It is well known that mass spectrometers can be used to analyze the-part of a wafer: Here comes the degree of contamination of semiconductor wafers. However, in order to separate the part for mass spectrometer analysis, the crystal B had to be damaged. In addition, the k method also takes a lot of time. Ί 罗 Ί Γ: ‘The manufacturing cost of conductive wafers is quite high’ Many semiconductor wafers are often wasted during testing or testing. Therefore, if the answer is correct: the reuse of all days and days 0 must be resolved urgently. A hard seed processing method for recovering a semiconductor wafer. The method involves a seed, which first uses a chemical method for the metal track and the semiconductor pad.
第4頁 0同提出的歐洲專利申請（專利申請號為1 250968 544750 五、發明說明（2) ' --—- 區域* ^後通過枯合劑拋光除去基材中被塗覆的半導體 此類粘合劑費用昂貴，需要反復利用。但粘合劑中往 处1含自被巧染的半導體晶圓上剝離的金屬，這樣，很可 二、。’屬Z，物又重新被植人即將進行拋光處理的晶圓表 产，，右能在回收的前判斷出半導體晶圓的金屬污染程 人广叮乂防止回收受污染的晶圓，從而能夠避免污染枯 發明目的 本發 快速易行 本發 的方法。 部汽化， 譜特性， 鐳射 導體材料 用，其中 挺狀電漿 出電磁幅 而可以判 相比 行，並能 及概述 明的主 的半導 明提供 該方法 並分析 由此檢 對半導 汽化， 電離作 冷卻形 射。該 斷出半 于現有 方便而 要目的為 體晶圓中 了 一種檢 包括用鐳 局部汽化 知出所述 體晶圓的 分裂為其 用會產生 式衰減， 電磁幅射 導體晶圓 的技術， 可靠地得 克服上述缺 金屬的檢知 知半導體晶 射照射半導 所產生柱狀 半導體晶圓 局部區域迅 自身的原子 柱狀電漿。 並在材料元 能根據其幅 中金屬的濃 本發明的檢 出半導體晶 陷而提供一種 方法。 圓中一種或多 體晶圓，使的 電漿的電磁幅 中金屬的存在 速加熱，引起 種類’並發生 受激發的原子 素的特性波長 射範圍加以分 度。 知方法快速而 圓中每種金屬 可靠且 種金屬 產生局 射的光 〇 晶圓半 電離作 種類以 上發散 析，從 簡便易 的含Page 4 0 The same European patent application filed (patent application number 1 250968 544750 V. Description of the invention (2) '----area * ^ After the coating of semiconductors such as adhesion in the substrate is removed by polishing with a desiccant The mixture is expensive and needs to be reused. However, the adhesive 1 contains metal stripped off from the semiconductor wafer that is being dyed. In this way, it is very easy. 2. It is Z, and the object will be implanted again soon. For polished wafers, you can determine the metal contamination of semiconductor wafers before recycling. You can prevent the recovery of contaminated wafers, so that you can avoid contamination. This method is quick and easy. Partial vaporization, spectral characteristics, for laser conductor materials, where the straight plasma generates electromagnetic amplitudes that can be compared, and can provide an overview of the main semiconductor and analyze the semiconducting vaporization. Ionization is used for cooling. This breakout is more convenient than the existing one, and the main purpose is to check the bulk wafer by radium. It is known that the fragmentation of the bulk wafer is attributable to its use. The technology of the magnetic radiation conductor wafer reliably overcomes the above-mentioned detection of the lack of metal. It is known that the semiconductor plasma is irradiated with semiconducting semiconductors and the local area of the columnar semiconductor wafer is generated by the atomic columnar plasma. The concentration of metals in the web provides a method for detecting semiconductor crystal depressions in the present invention. One or more wafers in a circle heat the presence of metal in the electromagnetic field of the plasma to heat the species, causing the species to be excited. The atomic element's characteristic wavelength range is divided. Knowing the method is fast and each metal in the circle is reliable and the metal produces localized light. The wafer's semi-ionization is more than a kind of divergence and analysis.
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由於該方法中的鐳射僅對半導體晶圓進行局部加熱， 因此該方法並不會對半導體晶圓產生破壞。 … 較佳實施例中，測試每種金屬在其特性波長下所產生 =電磁幅射幅度，據此而判斷出半導體晶圓中該金屬的濃 較佳實施例中，測試銅在其特性波長下所產生的電磁 幅射幅度，據此而判斷出該半導體晶圓中銅的濃度。 較佳實施例中，鐳射照射鄰近半導體晶圓的邊緣以 免損壞晶圓上半導體設備成形的處。 較佳實施例中，鐳射可用來形成一種標記，比如半導 體晶圓上的條碼或者序列號，本發明所述方法在鐳射標記 過程中的至少一點上進行。 在一實施例中，鐳射以脈衝形式射向半導體晶圓上的 一點，引起半導體晶圓沿縱深方向依序局部汽化，對每一 柱狀電漿發散產生的電磁幅射進行光譜特性分析，即可祥 到在半導體晶圓不同深度處的金屬污染指標。 在另一實施例中，鐳射持續地照射至半導體晶圓上的 一點’使半導體晶圓沿縱深方向局部汽化，汽化過程中在 至少兩點及時對柱狀電漿發散產生的電磁幅射進行光譜特 性分析。 較佳實施例中，對半導體晶圓的4 — 4 0 // m深度範圍連 續作光譜特性分析。 較佳實施例中，該檢知方法對半導體晶圓進行多點操Since the laser in this method only locally heats the semiconductor wafer, the method does not cause damage to the semiconductor wafer. … In a preferred embodiment, each metal is tested at its characteristic wavelength = electromagnetic radiation amplitude, and the concentration of the metal in the semiconductor wafer is determined based on this. In a preferred embodiment, copper is tested at its characteristic wavelength The amplitude of the generated electromagnetic radiation is used to determine the copper concentration in the semiconductor wafer. In a preferred embodiment, the laser is irradiated adjacent to the edge of the semiconductor wafer to avoid damaging the location of the semiconductor device on the wafer. In a preferred embodiment, laser can be used to form a mark, such as a barcode or serial number on a semiconductor wafer. The method of the present invention is performed at least one point in the laser marking process. In one embodiment, the laser is pulsed at a point on the semiconductor wafer, causing the semiconductor wafer to sequentially and locally vaporize in the depth direction, and the spectral characteristics of the electromagnetic radiation generated by each cylindrical plasma divergence are analyzed, that is, It can be noted that the metal pollution indicators at different depths of the semiconductor wafer. In another embodiment, the laser beam is continuously irradiated to a point on the semiconductor wafer to cause the semiconductor wafer to be partially vaporized in the depth direction. During the vaporization process, the electromagnetic radiation generated by the columnar plasma divergence is spectrumd in at least two points in time. Characteristic analysis. In the preferred embodiment, the spectral characteristics of the semiconductor wafer in the 4-4 0 // m depth range are continuously analyzed. In a preferred embodiment, the detection method performs multiple operations on a semiconductor wafer.
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作以避免對無金屬存在的處進行操作。 逸-1 λ ?檢知方法沿跨越半導體晶圓的線條 進c #作m此線條對柱狀電漿作依 ,鐳射可移置或偏轉以在不同點執行該檢知方=^可 令半導體晶圓相對於鐳射移動或旋轉。 較佳實施例中 的前面或後面照射 伸的側面進行照射 ，鐳射沿著大致垂直於半導體晶圓表面 ，抑或鐳射沿與半導體晶圓表面同向延 以下將結合附圖以一示例性實施例對本發明舟 闡述。 < V 圖式簡單說明： 第一圖為本發明中用以檢知丰導辦曰N 士 • 干守骽日日i中金屬的裝置的 第二圖m所示裝置中的鐳射相對半導體晶圓移 動方法的示意圖； 第三圖為表明第1圖所示裝置中的获& ^ ^4 展直甲的鐳射相對半導體晶圓移 動另一方法的不意圖。 圖號對照說明： !〇 晶圓 !2 柱狀電漿 14 棱鏡 !6 光電倍增器 11鐳射光束 13 光纖或透鏡 15衍射光栅 20 5 2 1 晶圓上的點 544750 五、發明說明（5) 發明詳細說明： 第一圖所示的裝置匕打一半導體晶圓10。一錯射光束 11置於靠近半導體晶阅1 ()前面的側邊一點，垂直於半導體 晶圓1 0的平面，以檢λ"半導體晶圓1 〇中鋼或其他金屬的含 量。鐳射光束11灼彳：導體晶圓10局部快速加熱，引起半導 體晶圓1 0材料汽化，分裂形成其元素的原子種類，並電離 而產生柱狀.Φ:漿1 2。當柱狀電漿1 2冷卻，受激發的元素原 子種類許滅而在其特性波長上發光。 ' W V;、例而言，十億分的5 —15的微量就可影響晶圓的電 木卜卜丨，因此，該係統須能檢知出銅在特性波長下幅射 4的2 1 5個光子。 為分析 光’或利用 用來選擇需 先栅15，用 生的結果反 體晶圓1 0中 鐳射11 一點。雷射 出晶圓在不 參照第 列號或條碼 導體晶圓1 〇 對棱鏡1 4傳輪 件。衍射光柵1 5 長。光穿過衍射 電倍增器16所產 申最後得出半導 導體晶圓1 0上的 部加深，以檢知 圓1 0的邊緣以序 中，用鐳射對半 ，21分析鐳射產 拄狀電漿12，用光纖或透鏡13 反射光拇將光分解至其光譜元 要被檢知的金屬要求發散的波 一光電倍增器16進行檢知。光 饋至電腦（未圖示），從電腦 銅和/或其他金屬的含量指標c 以脈衝形式持續性地照射至半 脈衝11逐次向半導體晶圓10内 同深度受金屬污染的程度。 二圖’該圖示意出在半導體晶 心w己半導體晶圓1 0。在此過程 進行標記，在一點或更多點20 544750 五、發明說明（6) 生的柱狀電漿1 2，從而檢知出半導體晶圓1 0中金屬污染的 程度。 當半導體晶圓10中含金屬污染量極小或無金屬污染 時，為確保該方法不在半導體晶圓1 0的單一點上進行，可 用鐳射在第三圖所示區域中掃描。 本發明提供了一種用於檢知半導體晶圓中金屬污染程 度的方法，該方法可靠而無破壞性。同時該方法亦可用作 在晶圓上標記其序列號的方法中一部分。Action to avoid operating in the absence of metal. Yi-1 λ? Detection method enters the line across the semiconductor wafer c # Make m this line depends on the columnar plasma, laser can be shifted or deflected to perform the detection at different points = ^ can make the semiconductor The wafer moves or rotates relative to the laser. In the preferred embodiment, the front side or the back side is irradiated to extend the side, and the laser light is substantially perpendicular to the surface of the semiconductor wafer, or the laser light is extended in the same direction as the surface of the semiconductor wafer. Invention boat explained. < Brief description of V diagram: The first diagram is a device for detecting metal in the present invention in the present invention; the second embodiment is a device for detecting metal in the second day; the laser shown in FIG. Schematic diagram of the circular movement method. The third figure shows the intention of another method of moving the straight laser beam relative to the semiconductor wafer in the device shown in FIG. 1. Description of drawing numbers:! 〇 Wafer! 2 Cylindrical plasma 14 Prism! 6 Photomultiplier 11 Laser beam 13 Fiber or lens 15 Diffraction grating 20 5 2 1 Point on the wafer 544750 V. Description of the invention (5) Invention Detailed description: The device shown in the first figure daggers a semiconductor wafer 10. A stray beam 11 is placed a little near the side of the front of the semiconductor wafer 1 (), perpendicular to the plane of the semiconductor wafer 10, to check the content of steel or other metals in the semiconductor wafer 10. The laser beam 11 burns: The conductor wafer 10 is locally heated rapidly, causing the semiconductor wafer 10 to vaporize, splitting to form atomic types of its elements, and ionizing to produce a columnar shape. Φ: paste 1 2. When the columnar plasma 12 is cooled, the excited element atom species may be extinguished and emit light at its characteristic wavelength. 'WV; for example, 5-15 parts per billion can affect the bakelite of the wafer. Therefore, the system must be able to detect the radiation of copper at the characteristic wavelength of 4 2 1 5 Photons. For analysis of light 'or use it is used to select the gate 15 required, and the resulting laser 11 is used in the reflector wafer 10. The laser emitting wafer does not refer to the column number or bar code. The conductive wafer 10 passes the prism 14 to the wheel. The diffraction grating 15 is long. Light passed through the diffractive electric multiplier 16 and finally the part on the semiconducting conductor wafer 10 was deepened. In order to detect the edge of the circle 10, the laser was used to halve it. In the slurry 12, the light reflected by the optical fiber or the lens 13 is used to detect the light to a wave-photomultiplier 16 which is required to be diverged by the metal whose spectral element is to be detected. The light is fed to a computer (not shown), and the computer's copper and / or other metal content index c is continuously irradiated in a pulse form to a half-pulse 11 successively into the semiconductor wafer 10 to the extent that the metal is contaminated at the same depth. FIG. 2 is a view showing a semiconductor wafer 10 at a semiconductor core w. Mark in this process, at one or more points 20 544750 V. Description of the invention (6) The columnar plasma 12 produced, so as to detect the degree of metal contamination in the semiconductor wafer 10. When the semiconductor wafer 10 contains little or no metal contamination, to ensure that the method is not performed at a single point on the semiconductor wafer 10, laser scanning can be performed in the area shown in the third figure. The invention provides a method for detecting the degree of metal contamination in a semiconductor wafer, which is reliable and non-destructive. This method can also be used as part of the method of marking its serial number on a wafer.
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