TW538257B - Microlithography projection objective - Google Patents

Abstract

There is provided a microlithography projection objective for short wavelengths, with an entrance pupil and an exit pupil for imaging an object field in an image field, which represents a segment of a ring field, in which the segment has an axis of symmetry and an extension perpendicular to the axis of symmetry and the extension is at least 20mm. The objective comprises a first (S1), a second (S2), a third (S3), a fourth (S4), a fifth (S5) and a sixth minor (S6) in centered arrangement relative to an optical axis. Each of these mirrors have an off-axis segment, in which the light beams traveling through the projection objective impinge. The diameter of the off-axis segment of the first, second, third, fourth, fifth and sixth mirrors as a function of the numerical aperture NA of the objective at the exit pupil is <= 1200 mm*NA.

Description

538257 V. Description of the invention (1) &amp; The present invention relates to a lithography objective lens such as the foreword part of the scope of patent application, a projection exposure device such as the scope of patent application, and a projection exposure equipment such as 2 The method for manufacturing a wafer of 2 items. Lithoscopy with a wavelength of <193 nm, and in particular EUV microscopy with λ = 11 nm or λ = ΐ3 ηπm, are discussed as a possible technique for imaging a structure of <130 nm. The resolution of this lithography system can be expressed by the following formula: Ί where k! Represents &gt; (the ratio of the political shadowing program, a represents the wavelength of incident light, and na represents the numerical aperture of the image side of the system. The usable optical element is basically a multilayer reflection system. The multilayer reflection system is preferably a ^ 10/66 system when the value is 11111111, and the MIMO / Si system is the best when the value is 13 nm. The numerical aperture is 0 · At 2 o'clock, imaging of a 50 nm structure with 13 nm light requires 0 = 77, and imaging of a 35 nm structure with 11 nm light requires 4 = 0.64. T Due to the reflectivity of the multiple coatings used It is only about 70%, so it is very important for EUV lithography projection objectives to achieve sufficient light intensity with the minimum number of EUV projection objective optical elements. Six mirrors were found to achieve particularly high light intensity and correctable NA = 0.20 US-A-5 153 898, EP-A-0 252 734, EP + 0 94 7 882, US-A-5686728, EP 0 779 528 , US 5 815 310, WO 99/57606 and US 6 033

C: \ 2D-C0DE \ 90-10 \ 90118732.ptd Page 4 538257 V. Description of the invention (2) 079 ° The lithography projection system proposed by the patent US-A-5 686 728 has a six-reflector projection objective, The reflecting surface of each mirror is aspheric. The mirrors are appropriately arranged along a common optical axis so that the optical path is not blocked. Since the projection objective proposed by patent US-A-5 686 728 can only be used for UV light with a wavelength of 100-300 nm, the asphericity of the projection objective lens is extremely high, about +/- 50 / zm, And the angle of incidence is extremely large, about 38. . Even if the diaphragm is reduced to N A = 0 · 2, the asphericity is still 2 5 // m and the incident angle is hardly reduced. Due to the high requirements for mirror surface quality and reflectivity, such asphericity and incident angle cannot be applied in the EUV range.

V-patent US-A-5 686 728 proposes that objective lenses that cannot be applied to λ <100 nm, especially at wavelengths 11 and 13 nm. Another disadvantage is that the distance between the wafer and the mirror closest to the wafer is small. . Patent US-A-5 686 728 proposes that the distance from the wafer to the mirror closest to the wafer is extremely small. Such mirrors are extremely unstable due to the coating stresses of the wavelength 丨 nm and 13 nm multilayer systems. The patent EP-A-0 779 528 applies a projection objective with six mirrors to EUV lithography ', especially with wavelengths of 11 nm and 13 nm. The disadvantage of this type of projection objective is that at least two mirrors have extremely high asphericity, either 26 or 18.5 vm. Patent EP-A-0 77 9 528 proposes that the optical free working distance from the wafer to the mirror closest to the wafer is also very small, which may lead to unstable or negative mechanical free working distance. Patent WO 9 9/5760 6 proposes a six-mirror projection objective lens for EUV lithography, the reflectors of which are sequentially concave, concave, convex, concave, convex, and concave, and the object-side numerical aperture NaQbject = 0.2. Patent WO 99/57606

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Page 5 538257 5. Description of the invention (3) The mirrors are aspherical. The disadvantage of the six-reflector objective lens proposed in the patent WO 99/57606 is that, without, it is easy to approach the effective range to mosaic the reflector, especially the second and third lenses. In addition, the reflection effect range of the fourth mirror of the system proposed by the patent WO 99/5 760 6 is far away from the optical axis. This makes the stability of the mirror system problematic in the manufacture of such mirrors. You need a lot of space here. Since the system is used in a vacuum, a considerable amount of space needs to be evacuated. Patent WO 99/5760 6 proposes a system with diaphragms located between the second and the first: /, leading to a large incident angle of the third mirror, especially larger than the mirror Patent US Θ 0 33 0 79 proposed a six-mirror system, Its angle of incidence is less than 18. . However, the disadvantage of this system is that the effective range of the first sub-mirror cannot be approached, and the reflectors: the effective range of the mirror is extremely ... the system requires a large space, and = 'will draw a considerable amount of space into the real $ . Mirrors are quite large-missing = large coating room and manufacturing machinery required. The object of the present invention is therefore to provide a projection objective lens suitable for lithography at 1000 nm, which does not have the above two and is preferably a small disadvantage, especially a projection objective lens, which has the largest size. The effective range of the known technology can be easily approached, and the aperture is the largest, like :: J 3 has the highest sexuality. The objective of correcting from a difference of 1 本 is achieved according to the present invention due to a short wavelength, especially a shadow projection objective lens, the projection object = M nm, the micro-pupil pupil, to image an object field in an image field, ;: U -out ring field with-symmetry axis and-perpendicular to the symmetry axis ϋ; ::; to :: C: \ 2D-CODE \ 9iM0 \ 90118732.ptd Page 6 538257 5. Description of the invention (4) —- -f2〇 丄 is preferably 25 _, the projection objective is provided with a first, a second, a first =, a fourth, a fifth, a sixth mirror, the centering optical axis is set, each reflection The mirrors all have an effective range. The beam passing through the projection objective enters the effective range. The diameter of the effective range of the first, second, third, fourth, fifth, and sixth reflectors is controlled by the numerical aperture of the exit pupil.丨 200mm NA, preferably $ 300 mm. The exit pupil has a numerical aperture of greater than 0.1 mm, preferably greater than 0.2, and particularly preferably greater than 0.23. The exit pupil numerical aperture of the present invention refers to the numerical aperture of the light beam reaching the image plane, the so-called image-side numerical aperture.

It is advantageous in lithography to make the imaging beam telecentric to the image plane. Therefore, it is advantageous to set the sixth objective mirror S6 of the projection objective as a concave surface. The fifth mirror S5 is located between the sixth mirror S6 and the image plane. If you want to make the objective path unobstructed, you need to control the exit pupil numerical aperture. In an advantageous embodiment aspect, the reason why the optical path of the objective lens is not blocked is that as the numerical aperture of the exit pupil increases, the radius of the annular field to be imaged also increases.

A further embodiment ensures the accessibility of the mirrors of the objective lens, especially for the mosaic mirror, which makes the first, second, third, fourth, fifth, and sixth mirrors each have a backward direction. The structure space has a depth from the front side of the mirror parallel to the optical axis in the effective range. The depth of the first, second, third, fourth, fifth, and sixth structure spaces is at least 50 mm. The fifth reflection The depth of the mirror structure space is greater than one third of the diameter of the fifth mirror, and each structure space is not penetrated.

C: \ 2D-OODE \ 90-10 \ 90118732.ptd Page 7 of the five invention description (5) special accessibility θ ^ called the axis extension, and the 疋 of X makes all structural space flat; r ^ ^ has In view of the coating: ^: mirror optical path or another-the structure of the mirror: the door, a limited range of edges: deformation, such as users: there is reflection; 1 around to get a particularly stable system. , And the objective lens light is not blocked, the mirror matrix, including the μ, +, ^ stress, ...:; i = '. The / Si multi-layer system usually produces "distortion prevention" to the effective range of the mirror. Edge, "Injury In a preferred embodiment, the effective range of the fourth mirror is between the second reflective image plane. 〃 It is particularly advantageous to position the fourth mirror between the third and second mirrors, especially between the first and second mirrors. This configuration makes the size of the first, second, third, and fourth mirrors particularly small. The ratio of the distance (S4S1) from the vertex of the fourth mirror to the first mirror along the optical axis to the distance (S 2 S1) from the second mirror to the first mirror is within the following range: &lt; &amp; 钤 钤 花 雠 Γ S 2 S 3) and the distance from the fourth mirror to the second mirror to the third mirror 1, μ · The distance of the third mirror (S4S3) ratio is within the following range. ~ 1 S3 S4) &lt; 0 , 9 〇 &gt; 3 &lt; (S2 S3)

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Then the objective lens unit composed of the fifth and sixth reflectors 5. Description of the invention (6) If the optical path needs to be unobstructed, there are two problematic parts. One problem is at the upper edge of the fifth mirror. The optical path needs to be properly designed, and the light at the lower edge is above the effective range of the mirror and reaches the image plane. The problem part is the lower edge of the sixth mirror. Another example is to select the average annular shape with the exit pupil numerical aperture NA, the distance between the fifth and sixth mirrors (S5S6), the distance between the fifth and sixth mirrors (S5B), and the bending radius rs, Γβ of the fifth and sixth mirrors. The field radius can be approximately unobstructed in the paraxial of the fifth and sixth mirror parts. /? &Gt; tan (arc sin {ΝΑ)) ^ {S5 Β) ^ {S5 S6)- —__] _ ~ 6 S5 S6) In accordance with the condition of unobstructed light path and smaller than the minimum radius, it will cause the aspheric deviation of the basic shape of the mirror to the spherical surface, that is, the asphericity of the mirror. Five mirrors. Then deviate from the paraxial approximation and the part to which the above formula applies. Mirror manufacturing technology with high asphericity is tedious. In order to suppress the angular load of the mirror, it is advantageous to make the main ray incident angle &lt; 18 of the field point on the middle symmetry axis of the object field of all the mirrors. . In a special embodiment of the invention, the projection objective has an intermediate image, which is advantageously in the light direction behind the fourth mirror. In the first embodiment of the present invention, the first reflecting mirrors are convex, and all reflecting mirrors are aspherical.

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V. Description of the invention (7) __

On this day, the moon and moon A are aspheric. In the conventional yoke example, the first mirror is concave, and all mirrors are also aspheric. In order to make the first mirror a paraxial plane, all mirrors are mirrors, mirrors are aspheric, and #up to five special reflective surfaces can be used, resulting in a particularly simple manufacturing. The advantage of s is that the reflector that makes the effective distance from the optical axis the furthest is the spherical surface of the four-mirror. The scope of the invention, in addition to the scope of the mirror, the present invention also provides a projection exposure device, which includes ::::? Field illumination device and projection objective lens of the present invention. The invention is further illustrated by the following examples. 1 · ^ 之 jg ^ j 儿 明 H can see the effective range and effective range diameter of the present invention. Display—Waist Material Projection Objective Mirror Photograph ㈣1. This objective lens is used in lithography projection lighting equipment 照明 ^ 2 ^;; y 1,-

circle,. Waist has sub-effect V perimeter Λ10 overlapping. The envelope circle is the effective range for enveloping. The diameter D of the effective dry circumference is obtained from the diameter of the envelope circle 2. Take J. Fig. 2 shows a projection objective of a projection illuminating device, which is imaged on an image plane of a wafer 'placed at 0 = 11 by the projection objective of the present invention. The image or object on the image plane, for example, the field or image field 11 is a fan-shaped annular field with a symmetry axis 2. / 目 同. Object display Figure 2 also shows the axes in the object plane, namely the χ and y axes. The ring field 11 symmetry axis 12 is in the y-axis direction. euv Yu Dan &gt; μ back

C: \ 2D-CODE \ 90-10 \ 90118732.ptd Page 10 538257, Description of the invention (8) The direction of the sweep field is also on the y-axis, and a circular field scanner is used for scanning. The X direction is the direction perpendicular to the scanning direction on the object plane. The annular field has a so-called mean annular field half shuttle R 'which is defined by the distance from the image field center point 15 to the optical axis HA of the projection objective.

FIG. 3 shows two examples of the two mirror elements H 22 ′ of the entire system of the projection objective lens according to the present invention. The mirror elements 20 and 22 are arranged corresponding to the effective range of the mirror, and / σ Γ axis 24 is set. As shown in Fig. 3, each of the projection objective mirrors 20, 22 has a structural space 26, 28. In the present invention, the depth T of the structure means = the visibility in the effective range of 20, 22, 30, 32 parallel to the optical axis. The center point of the effective range in the present invention is the incident point of the central image point main ray CR. As shown in Fig. 3, the mirror of the projection objective is appropriately set 'so that the structural spaces 26, 28 are not penetrated. FIG. 4 shows a first embodiment of a six-mirror system according to the present invention, wherein the size of the object to be imaged which forms a fan-shaped annular field and has the axis of symmetry as shown in FIG. 2 perpendicular to the direction of the axis of symmetry is at least 20 mm, preferably 25 mm. The object level to be imaged is shown in Fig. 4 on the object plane 100 of the lens. The object field on the object plane 100 in the illustrated embodiment is a ring field. An object to be imaged on a photosensitive layer is placed on the object plane, which is called a modulation disk in lithography.

The plane on which the object is imaged by the projection objective lens of the present invention is the image plane 102, and a wafer is placed on it. The projection objective lens of the present invention includes a first mirror 31, a first mirror S2, a second mirror S3, a fourth mirror S4, a fifth mirror S5, and a sixth mirror. In the embodiment shown in Fig. 4, all six mirrors Sl, S2, Mcc ^, = &amp; address M, S5, S6 are all set as aspherical mirrors. The first mirror S1 is a convex mirror.

View 257 V. Description of the invention (9) In the embodiment shown in FIG. 4, the diaphragm B is on the second mirror 32. The system is centered on the optical axis HA, and the image side, that is, the image plane 102, is telecentric. Image-side telecentricity means that the main ray CR is close to or about 90 °. Angular to the image plane 丨 〇2. In order to minimize the light loss in the mirror system and the wavefront aberration induced by the coating. , The incident angle of the central image point principal ray CR into the surface of the mirror is always less than 8. . Figure 4 also shows the structural spaces B1, B B4, B5, B6 of the mirrors S1, S2, S3,%, S5>% = range N !, N2, N3, N4, N5, N6. 'As shown clearly in Figure 4, the structure of the entire objective lens is that all structural spaces βι,, B3, B4' B5, B6 can be extended in a direction parallel to the object plane 100 object field symmetry axis 12 without cutting the objective light Structure or another reflector: For clear identification, Fig. 4 shows a standard system χ, y, z. Objective lens ^ In the Z direction, the object field is on the xy plane. The object field symmetry axis 12 is in the Y direction.

^ As shown in Figure 4 ', all the structural space of the effective range can be extended upwards on the symmetry axis 2: of the object field, so it is ensured that at least one side of the objective lens can be mounted and assembled with the reflector. J In addition, the embodiment of FIG. 4 is a system with an average image z. The average image 2 is between the second mirror 3 and the fourth rear and fifth mirror 84 'S5. Since this plane = Z, the system is divided into two parts. The first part includes the mirrors s2, S3, and S4, and the second part includes the mirror S5,%. The structural spaces B1 to S1 to S4 and S6 and "at least 50 = the structural space B5 of the ancient fifth mirror S5 is at least one of the effective levels of the fifth mirror, so that the first Five mirrors M and image

C: \ 2D-CODE \ 90-10 \ 90118732.ptd Page 12 538257 V. Description of the invention (ίο) There is a free working distance of at least 12 m between the planes of 102. The Code V data of the fourth embodiment of Fig. 4 is shown in the appendix table! . The mirrors S1, / 2, M, S4, S5, and S6 are components 1, 2, 3, 4, 5, 6. The numerical aperture of the image side of the first embodiment is 0.25. Fig. 5 shows a second embodiment of the present invention. The same items in Figure 4 are labeled with the same numbers. Similarly, the surfaces of the six mirrors are all non- 4 w white horse aspheric surfaces, but different from the embodiment of FIG. 4, the first mirror S1 is non-convex and concave. , e v table. The numerical aperture of the projection objective lens of FIG. 5 is the same as that of the embodiment of FIG. 4 as N A = 0.25. In the embodiment of FIG. 5, all reflections of the objective lens are effective. The effective diameter D of the lens is less than 300 mm. The object to be imaged constitutes a fan-shaped annular field as shown in FIG. 2. Fig. 5 The first embodiment of each mirror on X v flat and u A is taken as a ratio of Gambie-Du Du X 杜 The effective range on the dry surface is shown in Figs. 6a to 6f, which are marked with xy coordinates, such as

The direction is the scanning square of the circular field scanner. W direction. ^ Direction 'X direction is perpendicular to the scanning side as shown by ^' The effective range circle on the mirror S1 is basic, and the diameter D defined by the Γ J diagram is "5.04 Off. Figure 6b is valid on the mirror S 2 The range N 2 is basically a round report Gansu shape with a diameter of 157.168 mm °. Figure 6c Effective Sue on the mirror S3 [fiMq π & 109, R7 図. Xiusheng yoke around N3 is waist-shaped again , Its diameter D is 1UZ.367mm. Figure 6d. Reflection error—the effective range N4 diameter on the Han mirror M is 49 7 mm. Figure 6e. The effective range N5 on the mirror S5, S6, and the effective range N5 diameter D is]. n? ^ Horse circle heart horse 102, 367 coffee, effective range ㈣ diameter!) is page 13 C: \ 2D-G0DE \ 90-10 \ 90118732.ptd 538257 V. Description of the invention (11) 270 · 054 mm 〇 All effective ranges N1 of the embodiment, therefore, according to the present invention, the diameter of the projection objective lens to N 6 is less than 300 mm. FIG. 7 shows that the six mirrors of the present invention and the same elements of FIG. Code V table. The first mirror S1 in the embodiment of FIG. 7 is close to the light extraction HA and the same is 0. The third embodiment of the shadow objective lens. Same number as in FIG. 4. The third embodiment has a numerical aperture NA = 0 2 5. The axial plane, that is, the basic curve of the mirror 1 Figure 8 shows-a six-mirror system with a numerical aperture of 0.23, which is particularly advantageous in terms of manufacturing. Mirror is a spherical mirror 'This is extremely advantageous for manufacturing, because spherical processing is easier than aspheric, and the effective range on the fourth mirror is the farthest from the optical axis. Figure 8 System data see Appendix Table 4 The position of the fourth mirror between the second and the second or the first and the second mirror may cause the mirror, especially the fourth mirror, the effective range size is quite small. The second and second or the first and the first The relevant data of the position of the fourth mirror between the two mirrors can be obtained from the following conditions: 〇, 1 &lt; 〇, 3 &lt; (s ^^ sjx (5 /) [S3, S41 (S3) &lt; 〇, 9 (1) &lt; 0,9 (2) condition (2) especially:

Page 14 C: \ 2D-C0DE \ 90-10 \ 90118732.ptd 538257 V. Description of the invention (12) 〇, 4 〇, 9 (2a) The conditions of the four embodiments are described in the following. (S4S1) / (S2S1) convex 0. 14 _JLL concave 0. 35 Ml plane ~~ —__ 0. 19 five aspheric 0. 67 Table 5: Conditions (1) Data Example Figure 4 Figure 5 Figure 7 Figure 8 Table 6: Conditions ( 2) Example of data &quot; * ----- characteristics (S3S4) / (S2S3) 1 = Figure 4 Ml convex surface 0.31 ~ 2 = Figure 5 Ml concave surface 0.44 3 = Figure 7 Ml plane 0.34 4 = Figure 8 NA: 〇23, five aspheric surface 0.69 effective range and large reflectors require a large amount of structural space, which is not good for the vacuum of larger UHV systems. Another disadvantage of large mirrors is that they are more sensitive to mechanical oscillations because their natural frequencies are smaller than smaller mirrors. Another advantage of the small mirror size is that the asphericity of the substrate and coating can be performed in a smaller UHV lab. Deformation may occur at the edges of the substrate due to the coating stress caused by the multilayer system of the mirror substrate. In order for the deformation not to extend into the effective range,

\\ 312 \ 2d-code \ 90-10 \ 90118732.ptd Page 15 538257 V. Description of the invention (13) In the effective range, there is a minimum overflow channel in the periphery, so that the internal deformation can be reduced. The edge portions of each of the first to fourth embodiments are shown in Table 7. ”'Table 7: Mirror S1 to S6 edge data, and ° Mirror A1 :: Figure 4 A2 = S1 13 mm 21 S2 11 mm 11 S3 22 mm 28 &quot; Tram S6 5 mm 6 mm A3-one —-— 16mm As shown here, each of the embodiments of Figs. 4, 5, and 7 is larger than 4 mm, which is particularly advantageous for the coating stress when framing. Fig. 9 shows an advantageous embodiment of the projection objective of the present invention. Configurations of the fifth and sixth mirrors S 5, S 6. In FIG. 9, the imaging beam 2000 hits the image plane 100, and a wafer is placed on the image plane. The sixth mirror S6 is concave. The fifth mirror S5 is between the sixth mirror and the image plane 102. In the projection objective lens of the present invention, all the mirrors S1, S2, S3, S4, S5, and S6 are set on the object plane iQQ and the image plane 102. Between. If the light path in the projection objective lens needs to be unobstructed, the object mirror side part formed by the reflector holder and S 6 in FIG. 9 has two problem parts. One problem part is above the effective range of the fifth mirror S5. Edge 200. The optical path needs to be properly designed so that the lower edge light 2 of the beam 2000 is above the effective range N5 of the mirror S 5 and strikes the image plane. 〇 2 Table ring field radius, (S 5 B) representative of the mirrors from the image plane with s 5 2 1 billion, the lower edge of the relationship between the light 204 from the optical axis HA obtained by the following

C: \ 2D-CODE \ 90.10 \ 90ll8732.ptd Page 16 538257 V. Description of the invention (14) Y = R-(S5B) * tan (arc sin (ΝΑ)) where N A represents the numerical aperture of the exit pupil. The upper limit of the effective range N5 is determined by the incident point where the upper edge beam 206 of the beam 200 hits the fifth mirror. Using the variable r6: S6 curvature radius (S5S6): the distance between S5 and S6 (positive) can apply the intercept formula to the sixth mirror to obtain the fifth mirror effective range N% upper edge 2 02 and the optical axis HA, Distance y ,. y-, S5S6) tan (S5 B) + (S5 SG)-

R tan (arcsin (A // 4)) arc sin (Λ // 4) +2 arc sin

[NA (M {S5Bj + (S5S0i-r6 +-

R tan (arcsin {NA)) In order to make the optical path of the fifth-mirror S 5 unobstructed, △ y = y-y ’^ 0 Another part of the problem is at the lower edge of S6. In order to ensure that the paraxial is almost unobstructed, the intercept formula can be applied to S5 and S6 twice to obtain the ring radius R of the image plane 102: /? &Gt; tan (arc sin (NAj) * { S5 B) ^ {S5 S6) 1 1 Plant 5 S5 S6 such as r6, r5, (S5B) and (S5S6) are fixed, and r6 = 53 5.2 1 5 mm; r5 = 5 9 4.2 1 5 mm;

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(S5B) =, 44.083 mm; (S5S6) = 437.186 mm. B: According to the formula 'and △ y, the formula R of the main garment shape field radius is obtained as shown in Table 5 under the condition that the optical path of the fifth mirror is not blocked. Relationship of Aperture: Table 5

NA 0. 15 0. 20 0. 2 5 mm 18.191 0. 30 24.475 30. 958 37. 707 ^ 1 --- two ----------- vv ^ w__Ο I. Class y, 5 No, when the numerical aperture of the exit pupil is large, the ring field radius is large. When the% shape field radius is set, the aperture of the coaxial six-reflection lens can only be increased to a certain value. When this value is exceeded, the aspheric degree of the fifth mirror jumps, so that there will be problems with aspheric manufacturing and aspheric measurement technology and objective lens correction. (S5B) is the so-called objective lens-to-wafer working distance, which must not be less than the minimum value of 〆. By reducing (S 5 B) to reduce the ring field radius, only the minimum distance 0 (S5S6) can be reduced. Although the ring field radius is smaller, the incident angle of the fifth mirror S 5 is increased on the other hand. A large s 5 angle of incidence can be extremely expensive to achieve optimal reflection performance when manufactured in a multilayer system. Reducing h causes the same disadvantage as reducing the distance (S 5 S 6), so this reduction also increases the angle of incidence of g 5. Increasing re will get a smaller ring field radius, but it will damage the unobstructed fifth mirror. FIG. 10 shows a lithography projection exposure apparatus provided with a six-mirror projection objective lens 200 of the present invention. The lighting system 2000 is the "Illumination system particularly for the EUV lithography" of the patent EP 99 1 06348. 8 or the "Illumination system particularly for the

\\ 312 \ 2d-code \ 9〇-l〇 \ 90118732.ptd Page 18 538257 V. Description of the invention (16) EUV-Lithography ", the content of the announcement is fully incorporated in the present invention. Such a lighting system includes an EUV light source 204. The light from the EUV light source is focused by the condenser mirror 206. The modulation disk 212 is illuminated through a first mirror and a second mirror including a grating element (so-called pupil honeycomb). The light reflected by the modulation disc 212 is incident on a body 213 including a photosensitive layer through a projection objective lens of the present invention. The effective range size is small, and it is a thin and light projection lens designed in. Explanation of component number Z Envelope circle 6, 8 Envelope circle overlaps with waist-shaped irradiation field 2 10 Edge of waist-shaped irradiation field 11 Object field 12 Axis of symmetry of circular field 15 Center point of object field or image field 20, 22 Mirror element 26, 28 Structure space 30, 32 effective range center point 100 object plane 102 image plane 200 imaging beam 202 S5 effective range N5 upper edge 204 lower edge light

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V. Description of the invention (17) 206 Upper edge light S1 First reflector S2 Second reflector S3 Third reflector S4 Fourth reflector S5 Fifth reflector S6 Sixth reflector Bl, B2, B3, B4, B5 , B6 Reflector structure space Nl, N2, N3, N4, N5, N6 Mirror effective range X, y, z Coordinates of the object plane and image plane coordinate system HA Projection objective optical axis NA The exit pupil numerical aperture R Circular field radius CR main ray B diaphragm Z intermediate image D effective range diameter C: \ 2D-CODE \ 90-10 \ 90118732.ptd Page 20 538257 V. Description of the invention (18) Appendix: Table 1-4 C 〇de V-Objective lens Data sheet 1: Example 1 (Figure 4)

Element number Radius Thickness Diameter type aaaacT 1 1 3 4 5 6 3 ILQ INF A (l) Αζ2) α〇) Α (4) ACS) ACS] INF 743.3275 -557.1363 APHTTURaLSNOE 0.QQQQ • 7G2.996a -221.1310 737.9929 -436.7697 430.7697 210.3986 177.1640 177.3847 191.0743 426.0706 U0.I796 310.5313 70.5007 R £ FL ^ EFL HSFL HEFl. REFU aspheric constant 2 Ccurv) y 4 S 3 χα 2 -------- 2 2 1/2 + + (c) y + c〇) y 1 -η Cl-Cl + O Ccurv) y] 12 14 is ia 2Q + Cs] y — Cp] y + Cg) y &gt; ch) y 4. 0) Y

Aspheric curvature κ c AF 3 G c H a 1 AC 1) 0.Q0006144 〇〇〇〇〇〇〇〇 1.3725 βε-Z9 .S.48969E-10 • o.aoaaoe-eoo -4.477106-1S o.aaoooe + OQ S.93S97E-2Q α.οαοοοε + οο -1.S1832E-E4 OOQOGOE TEN GO AC 2) 0.000929SS a.QOOOGO -7.386B9e-30 -4.S0667E-U Q. QQQOQE-i-QO -3. a3QS5E-lS ο.οααοοε ^ -οο -3.520S0E-Z1 o.oooaoe + ao 7.4S57Qe-2S ο.οοοααε- ^ οο AC 3) 0.00234106 a -oooooo 1.64447c-27 -3.98337S-10 0.QQQQQ £ &lt; h0Q '2.92857E-15 O.OQOOQ £ &lt; t-QQ 8.46236S-13 oa〇QQ〇e-Hao -5.98614S-23 O.QOOQO &amp; -OQ A (4) 0.001938S7 O.aOQOQQ -1.71S15c -31 -3.SS491E-I2 Q.QQQOGE- ^ OQ 7.43877 ^ -17 Q.aaaGoe + oa -S.3S969e-22 ο.οααοαε + αο 2.3S53BE-25 0.0QGQQe-»-O0 A (s) O. QQ179SS1 0.QQQQ0Q -9.96Z5a £ -2S 3.445696-09 0. QQQQOE-rOQ 1.4S719E-13 · O.QQQQQEi-OQ -S.07132E «13 a. OooQoe-toa 1.U331H-21 q.oqqoqe ~ qo AC δ) 0.0Gia69QS Q.OQOOQO 4. + 4608E-32 S. (598S3E-U Q.QQQQQE-eOQ 3.06114E-1S a.aooQQe-f-oa 1.Z9I23E-21 0. OOQQOMO 2.32734 £ t27 Q. OQQOQe- ^ OQ reference wavelength = Π.4MM imaging The image side numerical aperture = 0.25 = 0.25

Page 21 C: \ 2D-CODE \ 90-10 \ 90118732.ptd 538257 V. Description of the invention (19) Table 2: Example 2 (Figure 5) Element number radius thickness. Diameter type OBJEKT INP 753-1539 217.5892 157.2983 1 aCI) -508.3959, AP £ HTUR3L £ N〇e Q.OGOO REP- 2 aC2] 592.9977 157.6453 REFL 3 Αζ3) Α (4) -263.0251 186.9465 ilSFL 4 357.5155 464.9979 R £ FL 5 a (S) -437.1855 110.6968 REFL β SILO Α (δ) INF 431.2631 311.3894 70.8868 Aspheric constant 12 14 16 13 20

—Ten CF) Y + CG) Y ♦ CH) Y + C3] Y Aspheric curvature iC EAF 3 GCH □ 3 AC l) -0.00009342 0.000000 3.Q984SE-29 S.02Q48 £ -1Q ο.αοοοοε 十 〇〇- 3.S9798S-I5 o.ooco〇E + ao 4.63491H-20 ο.οοοοοε 十 oo -1.24487E-Z4 q. Οοοαοε-τοα AC 2) 0.00094495 · -O.QOOOOQ O.QGOOOe-rQQ -a.S4008c- ll ο.οοοοοΕ + αο -a.2iaase-is O.OQQQQE-t ^ O -7.41356E-21 ο · οοοοοε + co -3.30250E-Z5 o. αοοαοε- ^ ο aC 3] 0.00281349 0.QQOOQQ -3.93860E -27 -a.95729e-ia ο.οοοοοε + οο i.oaoaas-i4 Q. QQOOOE-tOQ -1.55198ε-18 0.00000 &amp; + · 00 1.20451E-Z2 α. Oooooe-rQO aC * 0 0.00176899 0.7993S2- 1.S729SE-3Q -6.057695-10 o.ooaooe-foo -1.1482QE-1S o. Oooooe-hoo -3.64542E-2Q o.〇G〇ooe + ao 2.50132E-2S ο. Αοοαοε + ύο aC s) Q .00132073 O.QOOOOQ -8.779295-25 5.28849E-09 ο.αοοοοε ^ οο 1.32SQ7S-I3 o.οοοαοε + οα -2.78314Ε ~ 18 o. Ooooae-t-oo 7.00685 £ -22 ο.οοαοοε + οο aC s ] 0.00186381 a.OOGOOQ S.8Q814 £ -32 6.68738ε-Ι1 0. OQOQOE-fOa 3.06141E-1S 0.QOQ QQ £ + OQ 1.3438SE-21 Q.QOQOOe + OO 1.39691E-27 ο.αοαοοε + αο Reference wavelength = B · 4NM Imaging ratio = 0.25 Image side aperture = 0.25

IIHiH Page 22 C: \ 2D-CODE \ 90-] 0 \ 90118732.ptd 538257 V. Description of the invention (20) Table 3: Example 3 (Figure 7)

2 (GJRV) Y 2 2 1/2 1 + CI-CI + kKcurv) γ) 4 〇 3 IO + Ca) y + Ca) y + Cc) y C〇) y 12 14 IS 13 20 i- (ξ) υ + Cr) Y-»· Cg) y Ch) y + (J) y

Component Number Radius Thickness: Diameter Type α8] £ ΚΤ 1 2 INF a CD 757.2557 -S55.7Q33. 215.0671 RZfL α (2) ApzpmjRaLcNDe ο.ααοα S32.2766 173.9832 174.2476 REFL 3 aC3) -233.53S9 iaa.2262 R £ FL 4 a (4) 794.6148 423.4357 RSrL a (S) -436.8293 110.5239 RErL 3 a (S) 480.3400 310.5587 ^ EFL 3IU3 INF 7Q.476S aspheric constant aspheric curvature κ c AF 3 G c H a 1 aC 1) ο. αααοοοαο α.αοαοοο 2.03931 = -29 S.576346-10 ο · οοοοοεε00 -4.285052-15 Q.aaoooe-hOQ 6.16577E-2Q Q.QQQOOe-t-aO -I.427156-24 0. QQOOQE-f- aO aC 2] 0.QQ09Z3S2 ο.ααοοοο -7.38639ε-30 -4.S06S7e-U Q.QQQQQE + OO -3.53053 £ -lS O.aQOQOE-fOQ -3.S20SOE-21 a.OQOQOErOO 7.4657〇e-2S aQ〇Q〇a £ -r〇o aC 3] 0.Q0277S71 ο.αοαοοο 1.03438ε-27 -3.ZS329 £ -L0 O.QGOOOS-hOO -7.025235-IS 0. OOOOQE-rOO 5.33788c-19 a. oooaae + oo -3.32007ε-23 O.QOQGQ &amp; rQQ A (0.00138296 ο.οοααοο -5.3454ZS-31 -9.S1406 £ -12 o.oocaoe-foo S-06179e-lS α.αοοοαε + οο -9.93523S- 21 α.αααοοε- ^ ο 1.33 0S4 £ -25 Q.OQQQOe + QO aC s) (3.00135523 ο.ααοοοο -1.0SQ73 £ -25 5.1573S £ -09 ο.οοσοοε + οο 1.S4832S-13 a.ooaooe + oo -3.2aai2s-ia α. αοαοοε + οο 1.16863E-21 Q.QOOQOE-i-aO A [s) 0.00135397 ο.οοααοο 6.23447 £ -32 5.62264EU Q.QGQQQE + OQ 2.9909βε-1δ o.aoaooe + oQ 1.29774E-21 O.QOOQQE- rOO 1.07497S.-27 Q.0QQQQE-t-00 reference wavelength = 〖3.4NM imaging ratio 3 = 0.25 image side aperture = 0.25 iiriiiii C: \ 2D-CODE \ 90-10 \ 90118732.ptd page 23 538257 5. Description of the invention (21) Table 4: Example 4 (Figure 8) S piece number radius thickness diameter OBJEXT INf = 739.9343 1 A (D -659.9343 APERTURaLaNOe. Q.000G 188.S091 219.3872 2 a (2) 709.9848 219.1277 3 a ( 3) -492.0904 X79.7S99 4 847.3874 CC 1094.5501 577.4446 5 A (〇-412.2S37 109.4460 6 A (5) 452.2537 273.6442 BILD INF 71.0012

RSFL

RE.CL REFL REfL REFL aspheric constant

CCURV) Y r 4 6 3 10 (C) Y + 〇3] Y is ia CG) Y + (H) Y + L · 1 + Cl-Cl + K] C〇JRV) 221/2 ^ r: 12 id r COY + C?) Y ^ 20 0) Y Aspheric curvature 1C ε AP 3 G c H 0: AC 1) 0.00046523 〇.〇〇〇〇〇〇 3-23637E-23 -7.3632BH-U o.oooooe Dec 1.36189E-15 o. Οοοοαε-ταο -7.73130E-20 O.QOOQOE-hOO 8.54337Ξ-24 O.QQOQOE-i ^ QA (Z) 0.00092527. -0.Q000Q0 0.OOQQOe + OO -S.U521E -U O.OQQQQe + OQ -3.806875-16 o. Οοοοοε-τοο -3.05S82E-21 O.QQQOOE + QO -7.83S97S-27 O.OQOOOE + OQ AC 3] 0.00241893 0.000301 7.76365E-28 S.Q1337E-1Q O.QQOOQ £ -hOQ 2.76322S-1S 0. OGOOGE ^ Q 1.650S3S-19 a.οοοοοοε oo -1.79843E-23 o.Qooooe + oo A (4) 0.00112101 0.000000 2.29050E-2S 5.420535-09 O.QOOOQE -hOO 6.30201H-1S a .QOOOQE + QQ 6.1S162S-IS α.οοοοοε-ταο -2.1S921E-21 O.QOQQOE-hOO AC SD 0.00192607 0.00Q0QQ Q.OQQOOe + QQ 1.4Q503E-10 α.αααοοε-ί- οο 8.32770E-16 Q.QOQQOE-rQQ 3.64734E-21 0.qqqqqe + qq 5.66305E-26 Q.QQQQQE-hOO reference wavelength = 13 · 4NM imaging ratio = 0.25 image side aperture = 0.23 Ηϋ · C: \ 2D-CODE \ 90-10 \ 90118732.ptd page 24 538257

Figure 1 shows the effective range of a mirror. Figure 2 shows the annular field on the objective plane of the objective lens. Figure 3 is the definition of the structure space of two arbitrary mirrors of the projection objective. Fig. 4 is a first embodiment of the projection objective lens of the present invention, which is provided with a six aspherical mirror, wherein the first mirror is convex. Fig. 5 is a second embodiment of the projection objective lens of the present invention, which is provided with a six aspherical mirror, wherein the first mirror is concave. Figures 6a-6f are the effective ranges of the six-reflector objective lens of Figure 4; Fig. 7 is a third embodiment of the projection objective lens of the present invention, which is provided with six aspherical mirrors, wherein the first mirror is a paraxial plane. FIG. 8 is a fourth embodiment of the projection object of the present invention, # 工 c / mirror. A five aspheric surface and a spherical reflecting mirror are provided, and the fourth reflecting mirror is a spherical surface. Fig. 9 shows the projection of the six mirrors of the present invention. Part of the fifth and sixth mirrors of the objective lens. Fig. 10 is a projection diagram of the objective lens of the present invention, and again ~ a basic structural diagram of an exposure device.

C: \ 2D-OODE \ 90-10 \ 90118732.ptd ---- page 25

Claims (1)

538257 92, 2. 25 Replacement of this-^ _9〇Π8732 VI. Patent application scope 1 · A short-wavelength lithography projection objective lens, with an exit pupil and an exit pupil, so that one object = another shadow objective is provided with a Into an annular field, the annular field has a symmetrical vehicle and an image field, which is a fan, and is provided with /, a width perpendicular to the axis of symmetry. A third (s-a fifth (S5), a sixth mirror (S6), a farm, a fourth (S4), each mirror has an effective range, set through the If axis, the effective The range is characterized in that the diameter of the first, second, third, fourth, fifth, and third diameters of the light beam entering the objective lens is controlled by the numerical aperture of the exit pupil; 〇 and 1 200 mm * NA. 2. If the lithographic projection numerical aperture is greater than ο.1 in the scope of patent application, and the first, second, third, and fourth H image-side sixth mirrors The diameter of the effective range is between 0 and 300. 5. Brother 5. 3. The lithography projection of item 丨 in the scope of patent application Mirrors, i-, second, third, fourth, fifth, and sixth reflectors each have a structure space, and in the effective range, the front side of the mirror is parallel to the light j-degrees, the-,-: 3rd, 4th, 5th, and 6th structural space :: Degree is greater than 50 min, the depth of the 5th reflector's structural space is greater than the fifth / third of the diameter of the clothes mirror, and each structural space is not penetrated 4. Projection objectives such as the lithography projection objective in item 3 of the scope of patent application, wherein the structure space can be extended parallel to the axis of symmetry without cutting the structure space of the optical path reflector of the objective lens. 3 Another 5. If the scope of patent application The lithography projection objective of item 1, wherein 538257 VI. Application of patent scopes I, II, and the edge of the limited range, and 6 of them. · If applying for a special mirror effective range 7 · If applying for a special mirror in the third 8 · If applying for a special mirror in the first 9 · If you apply for the special mirror's vertex along the mirror to the first and the third reflection part, the objective lens's range of interest is in the range of the second range of interest and the distance between the optical axis of the second range of interest and the distance of the mirror The fourth, fifth, and sixth mirrors all have a range of optical path that is surrounded by the edge part and is between 2 mm and 28 mm. Among them, fourth among them, fourth among them, and fourth among them, the lithography projection objective of item 1 is between the second reflector and the image plane, and the lithography projection objective of item 1 is between the reflector and the mirror. The lithography projection objective of item 1 is between the reflectors. The ratio of the distance between the first reflector (S4S1) and the second reflection distance (S2S1) of the lithography projection objective of item 1 is within the following range: 〇, 1 S4 S1 S2 S1 &lt; 0, 9 1 0 The lithography projection objective of the range item 1, wherein the ratio of the distance (S2S3) of the vertex of the second mirror to the third mirror along the optical axis to the distance (S4S3) of the fourth mirror to the third mirror is within the following range : 0,3 ^ (S3S4) (S2 S3) &lt; 0, 9 1 1 · The lithography projection objective of item 1 of the scope of patent application, wherein the average annular field radius R and the exit pupil numerical aperture NA, the distance between the fifth and sixth mirrors (S5S6), the fifth mirror and the image plane Distance (S5B), fifth and first C: \ General file of patent cases \ 90 \ 90118732 \ 90118732 (replacement)-]. Ptc Page 27 538257 Case No. 90118732 Sixth, the scope of patent application Six mirrors bending radius r5, r6 The relationship is: R ^ tan (arc sin (ΝΑ)) * (S5 Β) ^ (S5 S6) 』 1 2. If the micro-inclusion field has a main field incident angle of item 1 in the scope of patent application, where the main field incident angle of the field point is between 0 ° 1 3 Back light side of the four-mirror (S4) 1 4 · As the micro- (B) of item 1 of the scope of patent application is on the optical path of the second mirror (S2). 1 5 · If the micro-mirror in item 1 of the patent application is convex, and the first, second, and mirrors are aspherical. 16 · If the micro-mirror in item 1 of the patent application is a paraxial plane, and the first and sixth mirrors are aspherical. 1 7 · If the lithography projection objective of item 丨 of the patent application scope, enter between the middle of the objective field of the mirror and 18 °. Shadow projection objective with an intermediate image in the upward direction. 'Shadow projection lens, its shadow projection lens, its fifth, third and fourth shadow projection lenses, the second, third, and first four mirrors are concave, and the second mirror is aspherical . 1 8 · If the micro-mirrors in item 1 of the patent application are aspherical. 19. If the lithography projection objective of item 1 of the scope of the patent application, its third, fourth, and fifth shadow projection projection lenses, one step includes a symmetrical car from the first in the middle of the diaphragm, the first in the sixth Five, the first and sixth in all the most shadow projection lens, 538257 The five mirrors are aspherical. 2 0 · If the scope of patent application No. 丨 9 is four spherical mirrors. The lithography projection objective lens, in which the 21st, as described in the first patent application scope of the micro to sixth (S2S6) mirrors are sequentially concave. Shadow projection objective lens, convex surface, concave surface Among them, the second convex surface, concave surface 2 2 · If the micro-image side of the scope of application for patent is} telecentric. Wen ~ Shucai shadow objective lens, in which the objective lens 2 3 ·-a projection exposure equipment, its characteristics,% field illumination, and--such as the application for patent 7 to irradiate a ring 24.-a method of manufacturing wafers, the system package = Projection objective lens \ Projection exposure equipment around item 23. For example, a patent application of 25. A short-wavelength lithography projection object's entrance pupil and -exit pupil is used to set the shadow objective lens in a fan-shaped annular field with a symmetrical axis and an ancient image field soldier. ^ Degrees, and include: ^ — a first (S1), a second (S2), a third (S3), four), a fifth (S5), and a sixth mirror that are perpendicular to the axis of symmetry (S6),-, With centering optical axis setting, in this effective range, the beam passing through the dental objective lens enters the first, fifth, and sixth mirrors with holes left and right: the effective range diameter is between, the first, The diameters of the second and third effective ranges are between 0 and 120 mm * NA. The first, second, third, fourth, fifth, and sixth mirrors each \\ A326 \ Patent Case File \ 90 \ 90118732 \ 90118732 (Replace H.ptc, page 29 538257 Case No. 901187 6. The scope of the patent application is-backward structural space, which is in the effective range by the optical axis-depth, the first, second, third, and fourth shots = the depth parallel to the structural space is greater than 50- The fifth reflection I, / 6 knot is one third of the diameter of the fifth mirror, and the degree of freezing between the social workers is large and its towels, and all structural spaces can be parallel to the symmetrical skin: through the optical path of the objective lens or Structural space of another mirror. Without cutting 26. — a kind of short-wavelength lithography projection objective, the pupil and -exit pupil to image the -object field on the two objective image field 'yes', a ring-shaped field, the ring field has a The axis of symmetry and a vertical j degree, and include: And the width of the 仏 耵% axis: first (si), a second (S2),-third (S3), _ fourth (s a fifth (S5) And a sixth reflector (S6), which is set to the center of the optical axis, which has an effective range s, and the light beam passing through the projection objective enters the '-th,-=, third, fourth, fifth, and The diameter of the effective range of the sixth mirror is determined by the numerical aperture of the exit pupil: the effective range diameter is between 0 and 120 mm * NA; and the distance from the vertex of the fourth mirror to the first mirror along the optical axis The ratio of (S4S1) to the distance from the second mirror to the first mirror (S2S1) is within the following range: 〇, &lt; (S4 S7) ((S2 S1) &lt; 0, 9 2 7 Lithography projection objective provided with \\ Eight 326 \ Patent case file \ 90118732 \ 90118732 (Replace Bu ^ ^ page 30 538257 Case No. 90118732 Year 6. Scope of patent application An entrance pupil and an exit pupil to fan a p 1 fan-shaped annular field with an axis of symmetry and an image%, which are degrees, and include: /, — the width perpendicular to the axis of symmetry Second (S3), fourth (S4), 'the optical axis is aligned, and the light beam passing through the projection objective enters a first (S1), a second (S2), and a fifth (S5) And a sixth mirror (S6), each mirror has an effective range, the effective range, Among them, the diameter of the effective range of the first, second, third, fourth, fifth and sixth mirrors is influenced by the numerical aperture of the exit pupil: the effective range diameter is between 0 and 120 mm * NA; and The ratio of the distance (S2S3) from the vertex of the second mirror to the third mirror along the optical axis to the distance (S4S3) from the fourth mirror to the third mirror is in the following range: 0,3 &lt; (S4) J ~ S2 S3) &lt; 0, 9 \\ a326 \ Patent case file \ 9〇 \ 9〇n8732 \ 90m732 (Replace w.ptc page 31