TW538141B - Titanium crystal and titanium, and method and apparatus for prodding the same - Google Patents

Titanium crystal and titanium, and method and apparatus for prodding the same Download PDF

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TW538141B
TW538141B TW87106693A TW87106693A TW538141B TW 538141 B TW538141 B TW 538141B TW 87106693 A TW87106693 A TW 87106693A TW 87106693 A TW87106693 A TW 87106693A TW 538141 B TW538141 B TW 538141B
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Taiwan
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titanium
scope
purity
patent application
item
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TW87106693A
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Chinese (zh)
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Harry Rosenberg
Nigel Winters
Yun Xu
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Alta Group Inc
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Priority claimed from US08/994,458 external-priority patent/US6063254A/en
Priority claimed from US08/994,733 external-priority patent/US6309595B1/en
Priority claimed from US09/016,919 external-priority patent/US6024847A/en
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Abstract

Described is a method and apparatus for producing high purity titanium and high purity titanium so produced. The process contemplates producing titanium sponge in a container and performing titanium fused salt electrolysis in situ in the same container to produce high purity titanium crystal, and where especially low oxygen content is desired, to treat the high purity titanium crystal as produced with iodine.

Description

538141 玖、發明說明 本發明是有關於一種咼純度鈦(Ti)晶體(Crystal) 及鈦金屬、及製造高純度鈦晶體及鈦金屬的方法與裝置。 本發明有關於製造鈦金屬綿(Ti Sponge ),並且在相同容 器中進行鈦融溶鹽(Ti Fused Salt )的電解(Electrolysis ): 其中,鈦金屬綿可用以生成高純度鈦晶體。其中,若需要 獲得低含氧量的高純度鈦晶體,則可以碘(12 )處理所獲 得的高純度鈦晶體。 目前,高純度鈦已被廣泛地應用於微電子工業上,用 以製造微處理機,以及應用於相似的物件中。微處理機的 技術不斷地進步(包括增加積集度、減少電路元件尺寸), 因此驅使製造廠商需提高鈦的純度,以符合晶片於製造上 的需求。 濺鍍(Sputtering)製程中係使用高純度的鈦靶(Ti Target)以產生微處理機、積體電路及平面顯示器(Flat Panel Display)等所需之薄膜。依據需求,其純度所需的範圍約 從99.99% ( 4N)至99.99999% ( 7N)。爲了改善尾端使用 性質(End Usage Property),可減少雜質的含量,此雜質 例如爲鹼金屬包括鈉(Na)與鉀(K)、重金屬包括鐵(Fe)、 鎳(Ni)與鉻(Cr)、放射性物質包括鈾(U)與钍(Th )、 以及氣體,特別是氧。這些元素會對元件的性質產生不佳 的影響,例如鐵污染會破壞薄膜圖案與電路元素、氧會影 響沉積層的阻値、鈉與鉀則會從沉積層中移至電晶體中而 3057twf3.doc/008 6 538141 降低效能、鈾與钍都會放出α粒子,因此會改變鄰近的固 態的狀態。一種俗稱“6Ν”純度的鈦,其全部的雜質(包 括氣體)含量約少於ippm,且含有少量的氧氣,例如約 少於lOOppm。此純度即是目前工業上所要求的。使用高 純度的鈦以及降低雜質的含量,可以改善濺鍍製程的效 能,並且可以增加微處理機或記憶元件的可信度與速度。 目前製造高純度鈦的製程包括:(1)在一經設計的容器 中,利用使TiCl4與一還原劑(Reducing Agent)進行反應, 藉以產生鈦金屬綿,所使用的還原劑比如是鎂(Mg )或 0 鈉:(2)以〜·真空蒸 f留裝置(Vacuum Distilling Apparatus ), 將鈦金屬綿進行真空蒸餾,以移除殘餘鹽類;或者以其他 的方式處理鈦金屬綿,以移除殘餘鹽類。(3)使用一具有融 溶鹽類之電解槽(Electrolytic Cell ),電解鈦金屬綿。以 _ 及(4)使用一電子束融爐(Electron-beam Furnace )或類似 · 的高真空融溶製程,將鈦融化。藉由結合這些步驟可以從 金屬塊(Ingot)中獲得鈦濺鍍靶。 因此本發明的主要目的就是在提供一種高純度鈦及製 造高純度鈦的裝置與方法。 # 本發明之方法包括於一容器中使四氯化鈦與還原劑產 生反應,藉以產生鈦金屬綿與融溶鹽類,然後在相同容器 中氯化鹽類〔見方程式(2)與(3)〕。其中還原劑包括鹼金屬 或鹼土金屬。並且在相同容器中電解這些鈦金屬綿,以產 生鈦晶體。然後,從容器中回收鈦晶體,並且將鹽類從欽 , 晶體中移除。其優點爲,容器有一金屬材質表面可做爲反 3057t\vt3.doc/O08 7 538141 應物接觸C Reactant-Contacting)表面,此金屬材質包括 電化學活性低於鈦的金屬(可參照氯化物電動勢序列)。 其中,較佳之還原劑包括鈉、鎂、鉀或鋰或上述金屬之合 金。並且,較佳之反應物接觸表面的金屬材質包括鉬 (Molybdenum )、鎳(Nickel )或鉬 / 鎳合金。 本發明中較佳之裝置包括一容器,此容器可保持爲充 滿空氣(Ah· Tight)的狀態,且具有其他元件用以提供原 始物質;陰極(Cathode);陽極(Anode);以及反應物接 觸表面,此表面的金屬材質爲電化學活性小於鈦的金屬(可 參照氯化物電動勢序列)。此裝置可同時用來製造鈦金屬 綿以及電解融溶鹽類,因此可同時進行還原與電解步驟; 而在進行電解步驟之前,也不需移除還原反應的產物。並 且四氯化鈦還原反應所產生的鹽類,可以用來作爲電解製 程中的鹽浴(Salt Bath)。 在本發明另一實施例中,上述之高純度鈦晶體可進一 步與碘反應而產生Til2與Til4,並且可在真空容器中,經 熱處理而分解成高純度鈦,其氧含量少於50ppm,甚至少 於約30ppm。其中,反應溫度的範圍爲500°C至800°C, 較佳的溫度範圍爲750°C至775t。而分解的溫度爲1150 t至1450°C,較佳的分解溫度範圍爲1300°C至1400°C : 此外,壓力可爲1000微米(Micron),且較佳値爲100至 500微米。 製造高純度鈦晶體的方法,包括如上所述,將鈦晶體 與碘反應而形成碘化鈦,在高溫中分解碘化物,並且降低 3057twi3.doc/008 8 538141 壓力,以產生氧含量少於50ppm之鈦晶體條。 本發明之製程可用以產生高純度之鈦金屬綿,其包含 總含量少於Ippm之Be、Mn、Zr、A1與V,以及總含量 少於lppm之Yb、Zn、Cr、Cd與Sn。此製程也可以用來 製造鈦金屬綿,其包含總含量少於Ippm之Be、Μη、V、 Zn、 Cr、 A1 、 Yb、 Cd、Zr、 Sn。 根據本發明之方法所獲得之高純度鈦晶體中包含總含 量少於lppm的鈉、鉀、鋁、鐵、鉻與鎳;總含量少於lppb 的U與Th,以及總含量少於lOppb之鈉與鉀,此包括氣 體及機械性陷住之鹽類。 而値得注意的一點是,這裡所述之鈦可包括也可不包 括機械性陷住之鹽類。因此,例如鈦純度與雜質含量的表 達,均不考慮機械性陷住鈦中的鹽類。而“機械性陷住鹽 類”這個名詞,並不限定於氯化鈉,而且係指物理性地陷 入於鈦晶體成長時所產生的孔洞、裂隙或開口中,而不是 大量的融解於金屬中,亦或不是與金屬產生合金。 其中,化學分析所使用的方法,包括用來分析金屬的 輝光放電質譜(Glow Discharge Mass Spectroscopy ; GDMS)與融爐原子吸收(Furance Atomic Absorption ; FAA),以及用來分析氣體的LECO氣體分析,其中包括 至國立標準與技術組織(National Institute of Standard and Technology ; NIST)校正可追蹤之樣品。 爲讓本發明之t述目的、特徵、和優點能更明顯易懂, 下文特舉一較佳實施例,並配合所附圖式,作詳細說明如 3057twf3.doc/008 9 538141 下: 圖式之簡單說明: 第1圖係繪示融溶鹽電動勢序列的示意圖; 第2圖類似於第1圖,但係代表關鍵元素(Window Element)以及在電解製程中,會留在鹽浴或陽極上的元 素; 第3圖係繪示一種混成槽(Hybrid Cell)的裝置示意 圖; 第4圖係繪示一種接收吸氣系統的剖面圖; 第5圖係繪示鐵污染對應於電流密度的關係圖; 第6圖係繪示於含Mo襯裡的容器中,溫度效應對應 於鐵排出之關係圖; 第7圖係繪示Mo襯裡容器之示意圖;以及 第8圖係繪示一種用來處理高純度鈦晶體,以降低其 氧含量的碘化物槽裝置圖。 圖示標記說明: 1 ··爐 2 .金屬綿 3 : Ti晶體 4 :鈦陰極 5 :鹽浴 6:陰極導線 7 :蓋户(Lid ) 8 : 丁丨014供應口 3057tw0.doc/008 538141 9:還原試劑供應口 10 :不銹鋼閘閥 11 :鍍鈦轉換捲軸(Transition Spool) 12 :銅電流配電器 13 :真空管線 14 :氬氣添加管線(Feed Pipe) 15 :鈦接收器(Receiver) 1 6 :吸氣系統 17 :熱套(Heat Jacket) 18 :搬運承受器 19、20 :絞盤設備 21 :鍍欽絞盤套(Winch Housing) 22 :進氣口 23 :真空絕緣抽風機(Blower) 24 :絕緣閥 25 :濾網 26 :管線加熱器 27 :加熱元素 28 :吸氣物質 29 :回收口 實施例 在鈦金屬綿的製造過程中,丁1(:14可與融溶態的鈉(或 鎂)吱應,而產生鈦金屬綿,並且產生NaCl (或MgCl2 ) 等副產物,如反應式(1)所示。TiCl2可作爲電解過程中的 3057tvvt3.doc/008 載體鹽類(Carrier Salt),並且丁10:12係由鈦金屬綿與TiCl4 反應而獲得,如反應式(2)所示。TiCl2可與過量的TiCl4反 應而產生TiCl3,如反應式(3)所示。 (1) 4Na(I) + TiCl4(g) - Ti(s) + 4NaCl(1) 或 2Mg ⑴ + TiCl(g> — Ti ⑴ + 2MgCl2(h (2) TiCI4(g) + Ti(s) -> 2TiCl2(1) (3) TiCl2山 + TiCl4(g) — 2TiCl3(丨) s =固相 1二液相 g =氣相 上述的反應式(2)與(3)係將鹽類氯化,以作爲電解之 闬。反應式(2)與反應式(3)之比例約爲4:1,且產生的鈦在 所形成或過量金屬綿中的平均原子價約爲2.2。也可以採 用其他的方法來氯化鹽類,以產生所需要的電解環境。例 如也可以直接將TiCl2W入電解浴中。 藉由還原TiCl4#產生金屬綿之還原劑,包括Na、Mg、 Ca、K與Li,還原劑進行反應的方式類似於上面所述。較 普遍的金屬綿之製造反應,包括使用鈉的Himter製程, 以及使用鎂的Kroll製程。 因爲在容器中進行還原反應之後,接著直接在容器中 進行金屬綿的電解反應。所以可以降低所有還原製程步 驟、相關的污染源,以及降低製造成本。還原反應中,鹽 類共產物包括電解質以及可忽略之水氣,此水氣是爲氧氣 的來源。並且可在單一的操作環境下,進行金屬綿製造以 3057tvvf3.doc/008 538141 及融瑢鹽電解。538141 玖 Description of the invention The present invention relates to a 咼 purity titanium (Ti) crystal and titanium metal, and a method and device for manufacturing high purity titanium crystal and titanium metal. The present invention relates to the manufacture of titanium sponge (Ti Sponge), and electrolysis of titanium fusible salt (Ti Fused Salt) in the same container: Among them, titanium sponge can be used to generate high-purity titanium crystals. Among them, if it is necessary to obtain high-purity titanium crystals with low oxygen content, the obtained high-purity titanium crystals can be treated with iodine (12). At present, high-purity titanium has been widely used in the microelectronics industry to manufacture microprocessors and to be used in similar objects. Microprocessor technology continues to advance (including increasing accumulation and reducing circuit component size), so manufacturers are required to increase the purity of titanium in order to meet wafer manufacturing requirements. In the sputtering process, a high-purity titanium target is used to produce the thin films required for microprocessors, integrated circuits, and flat panel displays. Depending on requirements, the range required for its purity is approximately 99.99% (4N) to 99.99999% (7N). In order to improve the End Usage Property, the content of impurities can be reduced, such as alkali metals including sodium (Na) and potassium (K), heavy metals including iron (Fe), nickel (Ni) and chromium (Cr ), Radioactive materials include uranium (U) and thorium (Th), and gases, especially oxygen. These elements will have a bad influence on the properties of the element, for example, iron pollution will damage the thin film pattern and circuit elements, oxygen will affect the resistance of the deposited layer, sodium and potassium will move from the deposited layer to the transistor and 3057twf3. doc / 008 6 538141 Reduced efficiency, both uranium and plutonium emit alpha particles, which will change the state of nearby solids. A titanium commonly known as "6N" purity has a total impurity (including gas) content of less than about ippm and contains a small amount of oxygen, such as less than about 100 ppm. This purity is currently required by the industry. Using high-purity titanium and reducing the content of impurities can improve the performance of the sputtering process and increase the reliability and speed of the microprocessor or memory element. The current manufacturing process of high-purity titanium includes: (1) In a designed container, TiCl4 is reacted with a reducing agent to generate titanium metal wool. The reducing agent used is, for example, magnesium (Mg) Or 0 sodium: (2) vacuum distillation with a vacuum distillation device (Vacuum Distilling Apparatus) to remove residual salts; or treat the titanium wool with other methods to remove residual Salt. (3) Use an electrolytic cell with molten salt (Electrolytic Cell) to electrolyze titanium metal wool. _ And (4) use an Electron-Beam Furnace or similar high vacuum melting process to melt the titanium. By combining these steps, a titanium sputtering target can be obtained from a metal block (Ingot). Therefore, the main object of the present invention is to provide a high-purity titanium and a device and method for manufacturing high-purity titanium. # The method of the present invention includes reacting titanium tetrachloride with a reducing agent in a container to generate titanium metal wool and molten salts, and then chlorinating the salts in the same container [see equations (2) and (3) )]. The reducing agent includes an alkali metal or an alkaline earth metal. And these titanium metal wools were electrolyzed in the same container to produce titanium crystals. Then, titanium crystals were recovered from the container, and salts were removed from the crystals. The advantage is that the container has a metal surface which can be used as the surface of anti-3057t \ vt3.doc / O08 7 538141. The metal material includes metals with electrochemical activity lower than titanium (refer to chloride electromotive force). sequence). Among them, preferred reducing agents include sodium, magnesium, potassium or lithium or alloys of the above metals. In addition, the preferred metal material of the contact surface of the reactant includes molybdenum, nickel, or molybdenum / nickel alloy. The preferred device of the present invention includes a container that can be maintained in a state filled with air (Ah · Tight) and has other elements for providing the original substance; a cathode; an anode; and a reactant contact surface The metal material on this surface is a metal with electrochemical activity less than that of titanium (refer to the chloride electromotive force sequence). This device can be used to manufacture titanium metal wool and electrolytic molten salts at the same time, so the reduction and electrolysis steps can be performed at the same time; and the products of the reduction reaction need not be removed before the electrolysis step. And the salt produced by the reduction reaction of titanium tetrachloride can be used as a salt bath in the electrolytic process. In another embodiment of the present invention, the above-mentioned high-purity titanium crystals can further react with iodine to generate Til2 and Til4, and can be decomposed into high-purity titanium by heat treatment in a vacuum container, and its oxygen content is less than 50 ppm, and even Less than about 30 ppm. The reaction temperature ranges from 500 ° C to 800 ° C, and the preferred temperature range is from 750 ° C to 775t. The decomposition temperature is 1150 t to 1450 ° C, and the preferred decomposition temperature range is 1300 ° C to 1400 ° C. In addition, the pressure can be 1000 micrometers (Micron), and preferably 値 is 100 to 500 micrometers. A method for manufacturing high-purity titanium crystals, including reacting titanium crystals with iodine to form titanium iodide as described above, decomposing iodide at high temperatures, and reducing the pressure of 3057twi3.doc / 008 8 538141 to produce an oxygen content of less than 50 ppm Of titanium crystals. The process of the present invention can be used to produce high-purity titanium metal wool, which includes Be, Mn, Zr, A1, and V in a total content of less than 1 ppm, and Yb, Zn, Cr, Cd, and Sn in a total content of less than 1 ppm. This process can also be used to manufacture titanium metal wool, which contains Be, Mn, V, Zn, Cr, A1, Yb, Cd, Zr, Sn with a total content of less than 1 ppm. The high-purity titanium crystal obtained according to the method of the present invention contains sodium, potassium, aluminum, iron, chromium and nickel in a total content of less than 1 ppm; U and Th in a total content of less than 1 ppb, and sodium in a total content of less than 10 ppb With potassium, this includes gas and mechanical trapped salts. It is important to note that the titanium described herein may or may not include mechanically trapped salts. Therefore, for example, expressions of titanium purity and impurity content do not consider mechanical trapping of salts in titanium. The term "mechanical trapping of salts" is not limited to sodium chloride, but refers to being physically trapped in holes, cracks or openings generated by the growth of titanium crystals, rather than being melted in a large amount in metals. , Or not alloy with metal. Among them, the methods used in chemical analysis include Glow Discharge Mass Spectroscopy (GDMS) and Furance Atomic Absorption (FAA) for analyzing metals, and LECO gas analysis for analyzing gases, where Includes traceable samples calibrated to the National Institute of Standard and Technology (NIST). In order to make the objectives, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description, such as 3057twf3.doc / 008 9 538141: Brief description: Figure 1 is a schematic diagram showing the electromotive force sequence of molten salt; Figure 2 is similar to Figure 1, but represents the key element (Window Element) and will remain on the salt bath or anode during the electrolytic process Figure 3 is a schematic diagram of a hybrid cell device; Figure 4 is a cross-sectional view of a receiving air intake system; Figure 5 is a diagram showing the relationship between iron pollution and current density Figure 6 is a diagram showing the relationship between temperature effect and iron discharge in a container with Mo lining; Figure 7 is a schematic diagram showing a Mo-lined container; and Figure 8 is a diagram for processing high purity Diagram of an iodide tank setup for titanium crystals to reduce their oxygen content. Description of pictographs: 1 ·· furnace 2 .metal wool 3: Ti crystal 4: titanium cathode 5: salt bath 6: cathode lead 7: lid 8: ding 014 supply port 3057tw0.doc / 008 538141 9 : Reducing reagent supply port 10: Stainless steel gate valve 11: Titanium-plated Transition Spool 12: Copper current distributor 13: Vacuum line 14: Argon feed line (Feed Pipe) 15: Titanium receiver (Receiver) 1 6: Suction system 17: Heat Jacket 18: Handling receiver 19, 20: Winch equipment 21: Winch Housing 22: Air inlet 23: Vacuum insulated blower (Blower) 24: Insulated valve 25: strainer 26: pipeline heater 27: heating element 28: getter material 29: recovery port Example In the manufacturing process of titanium metal wool, Ding 1 (: 14 can be dissolved with molten sodium (or magnesium) It can produce titanium metal wool and produce by-products such as NaCl (or MgCl2), as shown in reaction formula (1). TiCl2 can be used as 3057tvvt3.doc / 008 Carrier Salt in the electrolytic process, and Ding The 10:12 series is obtained by reacting titanium metal wool with TiCl4, as shown in reaction formula (2). TiCl2 can be reacted with an excess of TiCl4 reacts to produce TiCl3, as shown in reaction formula (3): (1) 4Na (I) + TiCl4 (g)-Ti (s) + 4NaCl (1) or 2Mg ⑴ + TiCl (g > — Ti ⑴ + 2MgCl2 (h (2) TiCI4 (g) + Ti (s)-> 2TiCl2 (1) (3) TiCl2 + TiCl4 (g) — 2TiCl3 (丨) s = solid phase 1 two liquid phases g = gas phase Reaction formulas (2) and (3) are chlorinated salts as a catalyst for electrolysis. The ratio of reaction formula (2) to reaction formula (3) is about 4: 1, and the titanium produced is formed or excessive. The average atomic valence in the metal wool is about 2.2. Other methods can be used to chlorinate the salts to produce the required electrolytic environment. For example, TiCl2W can be directly put into the electrolytic bath. The metal wool can be produced by reducing TiCl4 # The reducing agents include Na, Mg, Ca, K and Li. The reducing agents react in a similar manner as described above. The more common metal wool manufacturing reactions include the Himter process using sodium and the Kroll process using magnesium. The reason is that after the reduction reaction is performed in the container, the electrolytic reaction of the metal wool is directly performed in the container. Therefore, all reduction process steps, related pollution sources, and manufacturing costs can be reduced. In the reduction reaction, salt co-products include electrolytes and negligible water vapor, which is the source of oxygen. And under a single operating environment, metal wool manufacturing can be performed with 3057tvvf3.doc / 008 538141 and molten salt electrolysis.

目前也已經淸楚於習知製程中,可能的污染源。例如, 韌性鋼(Mild Steel)雖然未直接接觸鹽浴,但是卻會間 接污染鹽浴與鈦晶體。朝性鋼在水氣、鹽與熱的環境下, 會快速地氧化’所以會產生氧化鐵,且氧化鐵會從主物質 上剝離。假使不夠細心,且無法確定晶體中除了鈦或鈦食 金或電化學活性小於鈦的物質之外,不包含其他物質的 話,則鈦結晶的製程也會造成汙染。即使周圍的污染源, 亦會對晶體的性質有不良的影響。“周圍汙染,,包括可能存 在於空氣、或環境、或設備中的外部雜質。At present, they are already aware of the possible pollution sources in the conventional process. For example, although Mild Steel does not directly contact the salt bath, it indirectly contaminates the salt bath and titanium crystals. Under the environment of water vapor, salt and heat, the steel is rapidly oxidized, so iron oxide is generated, and the iron oxide is peeled from the main material. If it is not careful enough, and it is impossible to determine that the crystal does not contain other materials besides titanium or titanium ions or substances with less electrochemical activity than titanium, the titanium crystallization process will also cause pollution. Even the surrounding sources of pollution can adversely affect the properties of the crystal. "Ambient pollution, including external impurities that may be in the air, or the environment, or equipment.

上述之製程可藉由鹽電解金屬綿,而製造出高純度之 鈦晶體’包括速原TiC14以便使得欽金屬綿在電解之前, 不需先經過處理,所以可獲得高純度的鈦。在鈦的製程中, 可在同一操作環境之下,進行融溶鹽電解金屬綿,所以在 電解步驟之前,不需要前處理或移除金屬綿。並且,柯以 在同一反應槽中,進行還原反應與電解反應。還原劑,例 如鈉,與四氯化鈦反應之後,會形成鈦金屬綿與Nae u 接著將鹽類氯化,隨後進行電解。然後濾去鈦晶體中的酸, 並且用水沖洗以除去殘存的鹽類,接著使用真空乾墚或考 使用通入加熱氬氣的乾燥步驟。也可以使用其他的乾燦:少· 式例如冷凍乾燥法。 J 單一元素型的還原試劑,例如純Na,也可以取代巧 合型還原劑,並且吋用在單一反應中,以用來製造缺 綿及鹽類混合物。將反應物混合在一起的好處,是所產二 3057twt3.doc/008 538141 的鹽類可在低溫下融溶。例如,使用NaK和Na與TiCl4 產生反應時,鹽浴混合物的融溶溫度約爲660°C,而純NaCl 的融溶溫度約爲800t。控制鹽類混合物的組成,可以降 低後續電解步驟的操作成本,並且可獲得較廣的電解溫度 操作範圍。 本發明中較佳的還原劑係爲鈉,因爲鈉比鎂更容易被 純化。此外,NaCl的吸濕性(Hygroscopic )遠低於MgCl2 :The above process can be used to electrolyze metal wool to produce high-purity titanium crystals, including tachygen TiC14, so that the metal wool does not need to be processed before electrolysis, so high-purity titanium can be obtained. In the titanium manufacturing process, molten salt can be used to electrolyze metal wool under the same operating environment, so there is no need to pre-treat or remove the metal wool before the electrolysis step. In addition, Ke Yi performs reduction reaction and electrolytic reaction in the same reaction tank. After a reducing agent, such as sodium, reacts with titanium tetrachloride, titanium metal wool and Nae u are formed, and then the salts are chlorinated, followed by electrolysis. The acid in the titanium crystals was then filtered off and washed with water to remove residual salts, followed by vacuum drying or using a drying step with heated argon. Other dry and dry methods such as freeze drying can also be used. J Single-element reducing agents, such as pure Na, can also replace coincident reducing agents, and are used in a single reaction to make mixtures of fibers and salts. The benefit of mixing the reactants together is that the produced 3057twt3.doc / 008 538141 salts can be melted at low temperatures. For example, when NaK and Na react with TiCl4, the melting temperature of the salt bath mixture is about 660 ° C, while the melting temperature of pure NaCl is about 800t. Controlling the composition of the salt mixture can reduce the operating cost of subsequent electrolysis steps and achieve a wide range of electrolysis temperature operations. The preferred reducing agent in the present invention is sodium because sodium is easier to purify than magnesium. In addition, the hygroscopicity of NaCl is much lower than that of MgCl2:

TiCl4與還原試劑,例如鈉與TiCl4的純化可預先進行,以 避免成爲影響鈦金屬綿純度的因素。而將^(:14與Na進行 前處理,藉以使得TiCl4與Na中金屬性雜質含量約少於 lppm,較佳値爲少於O.lppm,也可以用來獲得高純度的 駄金屬綿。 而第二項影響鈦金屬綿純度的因素,爲所使弔的製 程。Na與TiCl4的反應係爲高度放熱性,所以會產生大量 的熱。例如,以太高的速率供應前驅物,會致使容器真的 融化。在本發明中較佳的供應速率相當低,使得容器、反 應物與產物之間的反應速率能夠相當小。並且,較佳的方 式爲同時在外部冷卻容器,以防止容器過熱。器壁設計也 是另一項考慮因素,器壁必須具有較大的熱導係數。例如, 容器可具有兩層或甚至三層的結構,例如一層外部的不銹 鋼層、一層主要的韌性鋼層、以及一層的內部層,其中此 內部罾之材質爲氯化物電動勢序列之電化學活性小於鈦的 物質,較佳之內部層的材質爲鉬。另一項因素,則爲物理 性接觸,因爲越緊密地接觸,則其熱導性就越佳。 3057tvvf3.doc/008 538141 第三項影響鈦金屬綿純度的因素,則是容器之反應物 接觸表面,對製造高純度鈦的影響。並非所有的物質都適 合闬來容納反應的進行。容器物質不可以在太低的溫度F 就融化,也不可以與任何產物的前驅物產生反應。在製程 中,容器物質也不可以快速地與鈦形成合金,並且反應物 接觸表面在氯化物電動勢序列之活性也必須小於鈦,此在 下文中將繼續討論。 表1與第1圖係列出氯化物電動勢序列(EMF序列), 以及此序列如何應用在本發明之裝置與電解製程中。也可 以藉由發生於陽極之選擇性氧化製程,以及發生於陰極的 選擇性還原製程,來控制電精煉(Electrorefining)能力。 這些製程係由兩個主要的反應機構來控制。一個反應機 構,係依據Nernest方程式所導出之電位序列(EMF序歹ij ) 而產生之電解反應◦另一個反應機構,係根據MCln + nTiCl2 <二> nTiCl3 + M(s)的抑制反應,其中Μ代表雜質元素,η代 表雜質元素形成氯鹽時的價態。在實際例子中,電解反應 之電壓約爲0.5伏特的過電壓(Overvlotage),抑制反應 之電壓約爲0.3伏特的過電壓。藉由結合這兩個反應機構, 以及在陽極與陰極發生的製程,並且考慮動力(Kinetic) 過電壓,則可以定義電精煉鈦的關鍵元素(Window Element)。這些關鍵元素對於過電壓相當敏感,因此無法 有效地在工業應用上被電解出來。因此,電解步驟無法有 效解決Μ η與V _雑質問題,且只能輕微地解決一般情況 下的Cr雜質問題。而且,對於電極上具有高過電壓的情 3057t\vf3.doc/008 538141 況下,電解較無法有效解決接近關鍵邊界的金屬。但是, 過電壓對於控制鐵則是很有效。此外,必須使用其他的方 法來消除Ah Mn、Zr*、Be與V。Purification of TiCl4 and reducing reagents, such as sodium and TiCl4, can be performed in advance to avoid becoming a factor affecting the purity of titanium metal wool. Pretreatment of ^ (: 14 and Na) can make the content of metallic impurities in TiCl4 and Na less than about 1 ppm, preferably less than 0.1 ppm. It can also be used to obtain high-purity rhenium metal wool. The second factor that affects the purity of titanium metal wool is the manufacturing process. The reaction system of Na and TiCl4 is highly exothermic, so it generates a lot of heat. For example, supplying precursors at too high a rate will cause the container to be true The melting rate in the present invention is relatively low, so that the reaction rate between the container, the reactants and the product can be relatively small. And, the better way is to cool the container at the same time to prevent the container from overheating. Wall design is another consideration. The wall must have a large thermal conductivity. For example, the container may have a two- or even three-layer structure, such as an outer stainless steel layer, a major ductile steel layer, and a single layer. The material of the inner layer is the substance whose electrochemical activity of the chloride electromotive force sequence is less than that of titanium, and the material of the preferred inner layer is molybdenum. Another factor is the material. Sexual contact, because the closer the contact, the better the thermal conductivity. 3057tvvf3.doc / 008 538141 The third factor that affects the purity of titanium metal wool is the contact surface of the reactant of the container, which is important for the manufacture of high-purity titanium. Impact. Not all substances are suitable for the reaction to take place. The container substance must not melt at too low a temperature F, nor can it react with the precursors of any product. In the process, the container substance cannot also be fast. Ground and titanium form an alloy, and the reactant contact surface must be less active in the chloride electromotive force sequence than titanium, which will be discussed below. Table 1 and Figure 1 show the chloride electromotive force sequence (EMF sequence), and this sequence How to use it in the device and electrolytic process of the present invention. The electrorefining ability can also be controlled by the selective oxidation process occurring at the anode and the selective reduction process occurring at the cathode. These processes are performed by two It is controlled by the main reaction mechanism. A reaction mechanism is based on the potential sequence (EMF sequence 歹 i j) and the electrolysis reaction generated by it. Another reaction mechanism is based on the inhibition reaction of MCln + nTiCl2 < di > nTiCl3 + M (s), where M represents the impurity element and η represents the valence state when the impurity element forms a chloride salt. In the practical example, the voltage of the electrolytic reaction is about 0.5 volts overvoltage (Overvlotage), and the voltage of the suppression reaction is about 0.3 volts overvoltage. By combining these two reaction mechanisms, and the process that occurs at the anode and cathode And considering Kinetic overvoltage, the key elements of electrorefined titanium (Window Element) can be defined. These key elements are quite sensitive to overvoltage, so they cannot be effectively electrolyzed in industrial applications. Therefore, the electrolysis step cannot effectively solve the problems of M η and V 雑 quality, and can only slightly solve the problem of Cr impurities in general cases. Moreover, in the case of high overvoltages on the electrode 3057t \ vf3.doc / 008 538141, electrolysis is less effective at solving metals close to key boundaries. However, overvoltage is very effective for controlling iron. In addition, other methods must be used to eliminate Ah Mn, Zr *, Be, and V.

Ti的電解製程中考慮氯化物電動勢序列的原因是因爲 驗金屬、驗土金屬以及稀土金屬會留在融溶狀的鹽浴中。 在融溶狀的鹽浴中包含有Ti2+,並且會自發性地產生 抑制反應。在鐵的例子中,因爲具有足夠的防止(Spare) 能量,所以即使陽極是純鐵,仍然無法有效地電解鐵(從 陽極氧化)。 電解可以產生氧含量相當少的鈦晶體。然而因爲儲藏 壽命很差,所以除非存放在真空環境下或覆蓋以氬氣,否 則從這些晶體所獲得的金屬條的純度將不及這些晶體。然 而,目前已知若在上述的同製程環境製程中,對鈦晶體進 行碘化製程則可以有效地將氧含量降低至30PPm或更少, 而且碘晶體塊具有相當好的儲藏壽命。 第2圖係繪示電解的精煉特徵,且代表易留在鹽浴或 陽極上的雜質。關鍵元素可藉由其他的方法來移除或防 止。將這些元素從前驅物移除,並且阻絕這些元素,則可 以獲得高純度的鈦。 操作溫度下的融溶鹽電動勢序列對於電解製程而言, 相當重要。電動勢序列,例如可由JANAF熱化學表第三 版而求得,而其他較舊的來源,例如包括美國礦物局公報 605。第1圖係繪示這些序列。對於這些計算結果而言, v些鹽類在低於NaCl的融點時會蒸發,或者在NaCl的融 3057t\vt3.doc/008 點時爲固態。在這些例子中,電解位能可藉由線性外插至 1 100K的自由形成能而獲得。在每個例子中,可由Nernst 方程式假設單位活性與平衡的情況下而獲得位能。然而, 事實上因爲雜質並不具有單位活性,並且不是在平衡狀態 下,所以這些情況並不符合真實的電精煉情況。所以電動 勢序列是每個變數都相互獨立下的限制狀況。然而,在操 作時必須考慮不同雜質的濃度,所以可調整施加的電壓以 補償原料純度以及操作溫度。 根據表1之電精煉製程,則如下所示:The reason for considering the chloride electromotive force sequence in the electrolytic process of Ti is that the test metal, soil test metal and rare earth metal will remain in the molten salt bath. Ti2 + is contained in the molten salt bath, and an inhibitory reaction occurs spontaneously. In the case of iron, because there is sufficient spare energy, even if the anode is pure iron, iron cannot be effectively electrolyzed (from anodizing). Electrolysis can produce titanium crystals with relatively low oxygen content. However, because of its poor storage life, the metal bars obtained from these crystals will not be as pure as those crystals unless stored under vacuum or covered with argon. However, it is currently known that if the titanium iodide process is performed in the same process environment process described above, the oxygen content can be effectively reduced to 30 PPm or less, and the iodine crystal block has a relatively good storage life. Figure 2 shows the refining characteristics of electrolysis and represents impurities that tend to remain on the salt bath or anode. Key elements can be removed or prevented by other methods. By removing these elements from the precursors and blocking them, high-purity titanium can be obtained. The electromotive force sequence of molten salt at operating temperature is very important for the electrolytic process. The electromotive force sequence can be obtained, for example, from the third edition of the JANAF Thermochemical Table, while other older sources include, for example, U.S. Bureau of Minerals Bulletin 605. Figure 1 shows these sequences. For these calculations, some salts evaporate below the melting point of NaCl, or are solid at the melting point of NaCl 3057t \ vt3.doc / 008. In these examples, the electrolytic potential can be obtained by linearly extrapolating to a free formation energy of 1 100K. In each case, potential energy can be obtained from the Nernst equation assuming unit activity and equilibrium. However, in fact, these impurities do not correspond to the actual electrorefining situation because impurities do not have unit activity and are not in equilibrium. So the electromotive force sequence is a limiting condition where each variable is independent of each other. However, the concentration of different impurities must be considered during operation, so the applied voltage can be adjusted to compensate the purity of the raw material and the operating temperature. According to the electric refining process in Table 1, it is as follows:

Ba至Yb之元素: (1) 電解步驟期間,這些元素會留在鹽浴中。 (2) 低過電壓爲有效。 關鍵元素: 位能接近Ti2+/Ti ( Be與Μη): (3) 當過電壓減少時,這些元素的排出量會增加。 (4) 這些元素在購買的TiCl4與Na中的含量都相 當低。 (5) 在預先純化步驟中,容易移除這些元素。 (6) 在高度真空的融化步驟中,Μη容易先被蒸 發。 位能位於Ti2VTi與Ti3 + /Ti2 +之間(V、Α1與Zr ): (1) 在實際例子中,電解步驟無法有效地精煉 出這些元素。 (2) 在金屬綿還原之前,這些元素會優先從 3057twt3.doc/008 538141Elements from Ba to Yb: (1) These elements will remain in the salt bath during the electrolysis step. (2) Low overvoltage is valid. Key elements: Potential energy close to Ti2 + / Ti (Be and Μη): (3) When the overvoltage is reduced, the emission of these elements will increase. (4) The content of these elements in the purchased TiCl4 and Na is quite low. (5) It is easy to remove these elements in the pre-purification step. (6) In the melting step of high vacuum, Mn is easily evaporated first. The potential energy is between Ti2VTi and Ti3 + / Ti2 + (V, A1, and Zr): (1) In practical examples, these elements cannot be efficiently refined in the electrolytic step. (2) Prior to the reduction of metal wool, these elements will preferentially start from 3057twt3.doc / 008 538141

TiCl4與還原試劑,例如鈉,中精煉出來。 (3) 在高度真空的融化步驟中,A1容易先被 蒸發。 位能接近Ti3 + /Ti2 +之間(Zr、Cr與Cd): (1) 當過電壓減少時,這些元素的排出量會增加。 (2) 這些元素在購買的TiCl4與Na或Mg中的含 量都相當低。 (3) 在預先純化步驟中,容易移除這些元素。 從B至Pt之元素: (1) 在電解步驟中,這些元素會留在陽極或槽 殘餘物中。 (2) 低過電壓爲有效。 金屬綿的製造以及鹽類的電解都是在混成槽儀器中進 行,所以在電解步驟之前不需要從還原容器中移除金屬 綿。其中金屬綿製造還原反應的鹽類共產物包括電解質。 在此較佳實施例中,混成槽包括鐵容器(外層),其 可用來製造與電電解鈦金屬綿。容器的內壁可包括鐵金 屬,此鐵金屬上鍍有一層氯化物電動勢序列小於鈦的金屬 層,此金屬層例如爲Mo、Ni或Mo/Ni。根據所需要的純 度而定,因爲容器會覆蓋有鈦金屬綿物質,所以容器可以 不用覆蓋其他物質。 爲了產生高純度鈦,可以使用鉬作爲電解時的較佳反 應物接觸表面物質。但是避免在高溫下使鋁接觸空氣,則 鉬會具有較佳的效能。這是因爲氧化鉬具有高蒸氣壓,並 3057t\vf3.docO08 18 538141 且會污染電解槽。然而,對於製造高純度鈦而言,也可使 用其他具有較高延展性以及比鉬更具抗氧化性的金屬-鐵、鎳以及鐵鎳合金及鎳鉬合金則特別更有用,因爲它們 可形成、可焊接且強度大於單獨的鎳,並且延展性更高於 鉬。然而,鎳合金中鋁的含量越高,則合金的活性越小, 並且鈦晶體的純度越高。 就電動勢序列、製造性及抗氧化性而言,鉛族金屬是 相當理想的,但是缺點就是太過於昂貴。 在電解製程中,若與金屬綿具有良好的電性接觸則較 佳。混成槽中的蓋子、轉換捲軸、接收器以及絞盤套也可 以是由鍍鈦的韌性鋼、不銹鋼或是可購買到的純鈦或是鈦 合金~若是要製造相當純的產物,則較佳者爲使用可購買 到的純鈦,來製造這些在還原製程中不會與TiCl4接觸的 儀器。在蓋子上的供給管線,可在還原反應與後續的鹽浴 氯化反應中用來添加鈉(或還原試劑)與TiCl4混合物。 若使用鎂作爲還原試劑,則可以在槽蓋上蓋子之前,先將 鎂裝入槽中,或者,可藉由一開口達成此目的。其中,供 給管線之材質可爲碳鋼,並且配有一鈦蓋子,藉以避免還 原製程中因腐蝕現象而產生雜質。 電源供應器係連接至電流配電器(陰極)與容器(陽 極)◦容器則位於氣體爐或電爐中,以保持還原電解反應 中所需要的溫度。並且在高度放熱的還原步驟中較好能夠 使空氣冷卻下來,使得供應原料的速度能夠提昇。此儀器 中也可以包括一絞盤,用以提昇或降下陰極與支撐架。陰 3057t\vt3.doc/008 538141 極的較佳材質爲鈦。加熱元素則位在外部的接收器上,用 以加熱接收器。並且當結合接收器抽真空製程與塡充氮氣 時,則可用來移除吸附在混成槽的水氣。另外可以藉由其 他方便的方法使得此接收器電性隔離電路,並且此接收器 可靜止於例如搬運承受器上,所以接收器可位於槽上或者 是處於鈦晶體的收成狀態。 在電解期間,電流可通過陽極而到達陰極,使得鈦加 速沉積至陰極上。接著,陽極上的金屬綿會被消耗掉,並 且殘留的鹽類會轉移至固定槽中,然後在混合槽中進行還 φ 原反應。若陽極未完全被消耗掉,則可用其他合適的方式 回收殘留的金屬綿。消耗掉的鹽類,富含於TiCl2中,可 與其他的還原試劑反應,此還原試劑例如鈉,而再次獲得 鈦金屬綿,此鈦金屬綿接著將進行其他的電解或傳統的操 作步驟。在同一容器中加入用以獲得鈦陽離子的還原試 : 劑,可幫助金屬綿製程與電解步驟,至此溶液中的鈦會變 成陽離子的部份,並且脫離鈦的鹽類可被泵抽出。然後可 以重複整個製程,藉以依據需要而增加純度。 在鹼金屬、重金屬、放射性元素、與氧中所產出的高 β 純度鈦的量相當少。特別是局純度鈦包含總重少於1 ppm 的Na、K、A卜Fe、Cr與Ni ;總重少於Ippb的U與Th ; 總重少於lOppb的Na與K ;以及少於lOOppm的氧,氧的 含量甚至少於50ppm ◦ 此外,上述之方法可用來製造鈦晶體,此鈦晶體含有 99.99999重量百分比的鈦,不包括氣體與機械性陷住之鹽 3057tw(3.doc/O0S 20 538141 類。而且,可獲得者爲含有99.9999重量百分比的鈦,不 包括氣體與機械性陷住之鹽類,但是包括少於50ppm的鹽 類。另外,在99.99999重量百分比的鈦晶體中,氧含量約 少於lOOppm,甚至少於50ppm。 爲了改善純度等級,甚至將鹽浴放入鋼容器中,藉以 在金屬綿製造過程中產生一層鈦保護層,此層保護層可以 在早期的電解操作中有效地隔離容器壁與鹽浴。此隔離效 果會一直持續到金屬綿完全被消耗掉。在後續的還原製程 中,會再次獲得保護層。 請參照第3圖,即可以淸楚了解本發明所使用之混成 槽。此混成槽適用於分批型(Batch Mode )的操作,也就 是說此混成槽的主體可以拆解開來或者是在還原或電解階 段中作適當修正。分批型操作則係利用同一操作環境之製 程設計的相同好處,其在還原與電解階段分別使用不同的 蓋子裝備設計。在分批型操作中,在金屬綿製程之後也可 以冷卻容器,以方便電解蓋子裝備的重新組裝。 此槽容器包括外層,此外層例如係由不銹鋼組成,所 以可以避免在氧氣環境中產生腐蝕現象;內層,此內層例 如係由鋼組成,藉以增加結構的整體性。一層由氯化物電 動勢序列中活性低於鈦之金屬,例如鎳、鎳合金、鉬、鉬 -鎳合金或非導電性物質層,例如氮化硼,所組成的層, 例如反應物容器表面,可覆蓋在內層的內部表面上。蓋f 裝備7的材質可包括鋼、或鍍上一層純鈦薄層、鎳、鉬、 或其他不活潑金屬。此容器與蓋子可裝設在氣爐或電爐1TiCl4 is refined with reducing agents such as sodium. (3) During the high vacuum melting step, A1 is easily evaporated first. The potential energy is close to Ti3 + / Ti2 + (Zr, Cr, and Cd): (1) When the overvoltage decreases, the emission of these elements will increase. (2) The content of these elements in the purchased TiCl4 and Na or Mg is quite low. (3) These elements are easily removed during the pre-purification step. Elements from B to Pt: (1) These elements will remain in the anode or tank residue during the electrolysis step. (2) Low overvoltage is valid. The manufacture of metal wool and the electrolysis of salts are performed in a mixing tank instrument, so there is no need to remove the metal wool from the reduction vessel before the electrolysis step. Among them, the salt co-product of the reduction reaction of the metal wool includes an electrolyte. In this preferred embodiment, the mixing tank includes an iron container (outer layer), which can be used to make and electrolyze titanium wool. The inner wall of the container may include ferrous metal. The ferrous metal is plated with a metal layer having a chloride electromotive force sequence smaller than that of titanium. The metal layer is, for example, Mo, Ni, or Mo / Ni. Depending on the required purity, the container may not be covered with other substances because the container will be covered with a titanium wool material. In order to produce high-purity titanium, molybdenum can be used as a preferred reactant-contacting surface substance in electrolysis. But avoid contacting aluminum with air at high temperature, molybdenum will have better performance. This is because molybdenum oxide has a high vapor pressure, is 3057t \ vf3.docO08 18 538141, and contaminates the electrolytic cell. However, for the production of high-purity titanium, other metals that have higher ductility and are more resistant to oxidation than molybdenum-iron, nickel, and iron-nickel alloys and nickel-molybdenum alloys are particularly useful because they can form , Weldable and stronger than nickel alone, and more ductile than molybdenum. However, the higher the aluminum content in the nickel alloy, the lower the alloy's activity and the higher the purity of the titanium crystal. In terms of electromotive force sequence, manufacturability and oxidation resistance, lead group metals are quite desirable, but the disadvantage is that they are too expensive. In the electrolytic process, it is better to have good electrical contact with the metal wool. The lid, conversion reel, receiver and capstan in the mixed tank can also be made of titanium-plated ductile steel, stainless steel or commercially available pure titanium or titanium alloy. If it is to be made of a relatively pure product, it is better In order to use commercially available pure titanium, these instruments will not be contacted with TiCl4 during the reduction process. The supply line on the lid can be used to add a mixture of sodium (or reducing reagent) and TiCl4 in the reduction reaction and subsequent salt bath chlorination reaction. If magnesium is used as the reducing reagent, the magnesium can be loaded into the tank before the tank lid is closed, or this can be achieved through an opening. Among them, the material of the supply pipeline can be carbon steel, and is equipped with a titanium cover to avoid impurities due to corrosion during the reduction process. The power supply is connected to the current distributor (cathode) and the container (anode). The container is located in a gas furnace or an electric furnace to maintain the temperature required for the reduction electrolysis reaction. And in the highly exothermic reduction step, it is better to cool the air so that the speed of supplying raw materials can be increased. This instrument can also include a winch to raise or lower the cathode and support. Yin 3057t \ vt3.doc / 008 538141 The preferred material for the pole is titanium. The heating element is located on the external receiver to heat the receiver. In addition, when the receiver is evacuated and nitrogen is filled, it can be used to remove the moisture adsorbed in the mixing tank. In addition, the receiver can be electrically isolated from the circuit by other convenient methods, and the receiver can be stationary on, for example, a handling receiver, so the receiver can be located on the tank or in the state of harvesting of titanium crystals. During electrolysis, current can pass through the anode to the cathode, causing accelerated deposition of titanium onto the cathode. Then, the metal wool on the anode is consumed, and the remaining salts are transferred to the fixed tank, and then the reduction reaction is performed in the mixing tank. If the anode is not completely consumed, other suitable methods can be used to recover the residual metal wool. The consumed salts are rich in TiCl2 and can be reacted with other reducing reagents, such as sodium, to obtain titanium wool again. This titanium wool will then undergo other electrolytic or traditional operating steps. Add the reduction test agent used to obtain titanium cations in the same container, which can help the metal wool process and electrolysis steps. At this time, the titanium in the solution will become a cation part, and the salts that are free of titanium can be pumped out. The entire process can then be repeated to increase purity as needed. The amount of high beta-purity titanium produced in alkali metals, heavy metals, radioactive elements, and oxygen is relatively small. In particular, local purity titanium contains Na, K, Ab, Fe, Cr, and Ni with a total weight of less than 1 ppm; U and Th with a total weight of less than Ippb; Na and K with a total weight of less than 10 ppm; and less than 100 ppm. Oxygen, the content of oxygen is even less than 50ppm ◦ In addition, the above method can be used to make titanium crystals. This titanium crystal contains 99.99999 weight percent titanium, excluding gas and mechanical trapped salts 3057tw (3.doc / O0S 20 538141 Moreover, the available is titanium containing 99.9999% by weight, excluding gas and mechanical trapped salts, but including less than 50ppm of salts. In addition, in the 99.99999% by weight titanium crystal, the oxygen content is about Less than 100ppm, even less than 50ppm. In order to improve the purity level, even put the salt bath in a steel container, so as to produce a titanium protective layer in the process of metal wool manufacturing, this layer of protective layer can be effectively used in the early electrolytic operation. Isolate the container wall from the salt bath. This isolation effect will continue until the metal wool is completely consumed. In the subsequent reduction process, a protective layer will be obtained again. Please refer to Figure 3 for a clear understanding of the invention. The mixing tank is used. This mixing tank is suitable for batch mode operation, that is to say, the main body of the mixing tank can be disassembled or appropriately modified in the reduction or electrolysis stage. For batch operation, It uses the same benefits of the process design of the same operating environment, which uses different cover equipment designs during the reduction and electrolysis stages. In batch-type operations, the container can also be cooled after the metal wool process to facilitate the re-assembly of the electrolytic cover equipment. This tank container includes an outer layer, and the outer layer is made of stainless steel, for example, so that it can avoid corrosion in an oxygen environment. The inner layer, this inner layer is made of steel, for example, to increase the integrity of the structure. One layer is made of chloride Metals that are less active than titanium in the electromotive force sequence, such as nickel, nickel alloys, molybdenum, molybdenum-nickel alloys, or layers of non-conductive materials, such as boron nitride, can be covered by an inner layer, such as the surface of a reagent container The material of the cover 7 can include steel, or a thin layer of pure titanium, nickel, molybdenum, or other inactive metals. The container may be mounted with the cover gas furnace or an electric furnace 1

jOSTtvvtj.doc/QOS 538141 上,並且可由鋼架所支撐。藉由還原試劑供應口 9,可將 足夠量的Na (或其他還原試劑組合)加入容器中/並fl 可藉由相對應的供應口 8將TiCl4加入槽中,直到反應完 成爲止。當所有的還原試劑反應之後可加入額外的TiCl4, 藉以使用TiCl2/TiCl3有效氯化鹽浴5,使鈦的重量百分比 含量約爲2-12%。此反應進行時,靠近容器壁位置所測量 到的壓力約爲2psig至4psig,且溫度約爲800-1000°C ◦可 以控制還原製程,使反應器內部的溫度相當低,因此可確 保叫不會從容器上獲取雜質或其他非鈦物質。依據上述之 程序,可在容器底部與部份的器壁上覆蓋一層鈦金屬綿h 而蓋子上的組成,通常稱爲上層結構 (Superstructure),例如可包括:不鏡鋼閘閥10、鍍鈦轉 換捲軸11、銅電流配電器12、鈦接收器15,此鈦接收器 15包括一熱套17、搬運承受器18以及鍍鈦絞盤套21。如 圖所示,上述的上層結構係配置在容器之上,且上層結構 之材質可包括鈦、不銹鋼、鉬、鎳、鉬鎳合金、以及上述 金屬之合金。此外,可使用任何習知之方法使得上層結構 的電性與電路相隔離。槽的上層結構也可以是其他不會讓 腐蝕或侵蝕產物進入鹽浴並汙染鈦晶體的物質。在電解之 前,槽上層結構可先用真空管線13抽真空,使其壓力約 低於ΙΟχΙΟ·6或更低。將泵與接收器相結合則可以有效移 除空氣與表面上的水氣,藉以能夠獲得低含氧量的鈦晶 體。在真空步驟之後,可以使用氬氣添加管線I4將容器 充滿氬氣。然後,可以進行額外的抽真空步驟以進一步將 3057twt3.doc 008 538141 水氣從系統中移除。 請參照第4圖,吸氣系統16可藉由一加熱吸氣物質 以在電解製程前、中或後循環槽中氣體,並且可用以除去 槽中殘餘的氧氣。但是本發明不限於使用第4圖所使用之 儀器,本發明同樣示用於其他類似的儀器。例如也可以使 用對流驅動循環機以簡化儀器,但是相對的會損失時間效 率。真空絕緣抽風機23可將槽中的氣體經由進氣口 22吸 至下方的吸氣機中。鈦晶體、微細鈦粒子、鈦塊之車床細 工、以及其他的物質,例如Zr,會在適當情況下吸收氧氣, φ 所以可作爲良好的吸氣物質28。所以,使用這些物質的時 候,不會將汙染物導入槽中。吸氣物質可藉由管線入口處 的鈦濾網25而進入管線加熱器26中。槽中氣體可通過由 加熱元素27加熱至約300°C至800°C,並且經由回收口 29 ' 而回至接收氣中。當這些物質用完時,可使用絕緣閥24 : 使系統絕緣,然後再加入新物質。 操作溫度與鹽浴組成有關,對典型的鹽類而言,操作 溫度範圍約從650°C至900°C。若使用混合型鹽類則電解 製程中可使用較低的操作溫度。 # 實際上,限制最大操作溫度的一項因素是容器襯裡物 質與鈦會產生共晶體(Eutectic )。例如,鎳襯裡會與鈦在 約950°C時形成共晶體。 絞盤設備19、20係用來降低純鈦陰極4,絞盤設備19、 . 20吋藉由電性絕緣線與陰極支撐架相連接。根據鹽浴與於 - 屬綿層的深度,可使闬不同長度的陰極。起先,陰極底部 3057twf3.doc/008 23 538141 與金屬綿的距離約15至20英吋。此陰極支撐架可與電路 分電盤電性相接觸,藉以使得電路完成一迴路。在一例子 中,電源供應器可同時連接陰極導線6與電流分電盤。直 流電電源供應器可提供約〇至12伏特之電壓及0至10000 安培之安培量。電源供應器可藉由電壓或電路控制的方式 來操作。個別的運轉以及數次運轉之間的電流密度都會不 同,依據起始陰極表面積的不同,電流密度的範圍約爲0」 至0.1至1.4 (amps/cm2)。根據實驗發現,較低的電流密 度可獲得較高純度的鈦晶體,因爲低電流密度可防止雜質 沈積在陰極上。其中較佳的電流密度約爲0.3 (amps/cm2) 及少於0.3 Umps/cm2)然而因爲當鈦晶體形成時,同時 會增加陰極表面積,所以只需要在電解製程起始時,適當 精確測量電流密度即可。表2A中的數據繪示於第5圖中, 且表2B係顯示起始電流密度從0.1 ( amps/cm2 )變化至1.9 (amps/cm2)之結果。如表所示,此數據資料可與電流較 佳化的理論計算値相同。當槽中電流密度約爲0.3 (amps/cm2)時,由不同物質所獲得之欽晶體均存在有相 同的特質。此結果表示假如適當並且在某些操作限制下操 作槽的話,即使使用韌性鋼,仍可以獲得高純度的鈦晶體。 若使用鎳或鉬(或先前所提過之不活潑金屬)作爲容器襯 裡,則可以擴大操作範圍。 在其中之-操作實施例中,可固定電壓,然後增加電 流直到達到一設定値。在後續步驟中,則固定電流,並μ. 降低電壓、這些趨勢的解釋方法包括觀察當鈦晶體形成於 3057t\vt3.doc/008 24 538141 陰極上時、整體電流的電阻減少時,電流固定下電壓降低 時、以及固定電壓下安培量增加時。並且根據製程需要以 及陽極/鹽浴條件,可在上述操作範圍中以及變化/固定 控制設計中,變化電解製程的變數。 在電解製程之後,可將陰極至入接收器中,藉以隔離 陰極與鹽浴,並且使陰極冷卻。在冷卻循環中,可添加氬 氣,使得槽的壓力保持爲〇至lOpsig。並且較佳者爲在冷 卻循環中避免使接收器的壓力低於Opsig,以避免產生氣 體遺漏,而汙染鈦晶體。然而,當容器不會產生氣體遺漏 φ 時,則壓力也可以低於Opsig。冷卻循環會一直持續到鈦 晶體沈積溫度到達100°C時爲止,較佳値爲50°c。 接著,可從陰極架與過濾器上移除陰極與沈積的鈦晶 體,移除的方法包括使用溫和酸溶液移除所有表面的鹽類 ' 沈積物。電解鹽類通常會因爲晶體成長或架橋現象而產生 : 一般的機械性陷住現象。其中,陷入的數量約從50至 3000ppm。然後,使用物理性剝除法將鈦晶體從陰極上剝 除下來,並且完全地潤濕以移除殘餘鹽類,其中更重要的 一點是要移除所以出現在晶體上的酸。完全移除酸是相當 β 重要的,因爲殘留的酸會含有溶液中的雜質,且一擔蒸發 酸的化則會造成氧化物沈積,所以會汙染晶體,而使得晶 體沒有用處。乾燥的方法包括使用真空乾燥法或使得熱氬 氣通過晶體。此外,使用冷凍乾燥法也很有用,但是速率 較慢。乾燥晶體的目的是要讓水氣含量少於0.2重量卩:!分 , 比,或者是達到檢測不出來的等級,以獲得較高品質的產 3057tvvf3.doc/008 單一還原反應可以產生足夠供應數個電解反應的金屬 綿。在反應中,氯化物電動勢序列中活性小於鈦的雜質不 是會殘留在金屬綿中就是會離開溶液中,並且會汙染陽極 或其他表面。活性小於鈦的雜質元素傾向於殘留在鹽類 中。其中,氯化物電動勢序列具有約0.5伏特的關鍵 (Window )。容器襯裡若爲不活潑金屬,則此金屬不會進 入溶液中且沈積在電極上。當陽極上不再有沈積反應之 後,則準備容器以進行下一個還原反應。 如先前所述,當陽極不再有沈積反應之後,則進行電 解反應。在電解反應中,可使用鈉剝除鹽浴中剩下的鈦, 並且使用習知之方法回收鈦。此外,當陽極不再有沈積反 應之後,則冷卻容器並且將容器從儀器中移除。接著,使 用任何習知之移除方法,移除蓋子以及回收任何剩下的鈦 金屬綿。在冷卻容器之前,可先處理此富含鈦之鹽類,例 如與其他的還原試劑反應藉以獲得鈦金屬綿。 較佳回收鈦的方法包括將陰極沈積物浸入弱礦物酸溶 液(較佳者爲HC1或H2S04)中。此時必須小心處理以防 止汙染產生,並且若可能的話,則使用潔淨室以及高純度 的試劑。而溶液的pH値必須夠低,藉以使得所有可預測 到的雜質都留在溶液中。然後,潤濕陰極沈積物直到潤濕 所使甲的水變成中性爲止,其中潤濕步驟例如爲使用去離 f水。使⑴钛床則可能移去沈積物,接著再次進行潤與 步驟。若需要的話,則可以使用鈦壓碎機將大塊的沈積物 3057tvvf3.doc/008 26 538141 壓碎。接著,可以储 一 用$知潤濕與分離微細物的方法,在 ★ u肩使用不包含任何微細粒子的去離子 水。在潤濕步騾中撸_、+、 θ _ 功沈澱物也是很有幫助的。 所有結晶製程牵4 # ,rfi,π 、仕 讨我步驟較好係在潔淨環境中進行。 例如,進--步處理莆t 、一〜, 上之駄晶體、過濾、潤濕、乾燥、 適虽刀離徽細物、以P - __ 一 _____ ‘ 及对裝等步驟均應該在潔淨室環境屮 t二士而在境中所進行的封裝步驟或真空環境中爲 J後t步驗=進行的轉移步驟同樣也都應該在潔淨室環境jOSTtvvtj.doc / QOS 538141 and can be supported by a steel frame. Through the reducing reagent supply port 9, a sufficient amount of Na (or other reducing reagent combination) can be added to the container / and fl can be added to the tank through the corresponding supply port 8 until the reaction is completed. After all the reducing reagents have reacted, additional TiCl4 can be added, so that TiCl2 / TiCl3 effective chloride bath 5 can be used, so that the weight percentage of titanium is about 2-12%. During this reaction, the pressure measured near the vessel wall is about 2 psig to 4 psig, and the temperature is about 800-1000 ° C. ◦ The reduction process can be controlled to make the temperature inside the reactor quite low, so it can ensure that Obtain impurities or other non-titanium materials from the container. According to the above procedure, the bottom and part of the container wall can be covered with a layer of titanium metal wool, and the composition on the lid is usually called the superstructure. For example, it can include: non-mirror steel gate valve 10, titanium plating conversion The reel 11, the copper current distributor 12, and the titanium receiver 15 include a heat jacket 17, a carrying receiver 18, and a titanium-plated winch cover 21. As shown in the figure, the above-mentioned upper structure is arranged on the container, and the material of the upper structure may include titanium, stainless steel, molybdenum, nickel, molybdenum-nickel alloy, and alloys of the above metals. In addition, any conventional method can be used to isolate the electrical properties of the superstructure from the circuit. The superstructure of the tank can also be other substances that will not allow corrosion or erosion products to enter the salt bath and contaminate the titanium crystals. Prior to electrolysis, the upper structure of the tank can be evacuated with a vacuum line 13 to make its pressure lower than 10 × 10 · 6 or lower. Combining the pump with the receiver can effectively remove air and water vapor from the surface, so that titanium crystals with low oxygen content can be obtained. After the vacuum step, the vessel can be filled with argon using argon addition line I4. An additional evacuation step can then be performed to further remove 3057twt3.doc 008 538141 moisture from the system. Referring to FIG. 4, the getter system 16 can heat the getter material to circulate the gas in the tank before, during or after the electrolysis process, and can be used to remove residual oxygen in the tank. However, the present invention is not limited to the apparatus used in Fig. 4, and the present invention is also shown to be applied to other similar apparatuses. For example, a convection driven cycle machine can also be used to simplify the instrument, but the relative time efficiency is lost. The vacuum insulated exhaust fan 23 can suck the gas in the tank through the air inlet 22 to the lower suction machine. Titanium crystals, fine titanium particles, lathe machining of titanium blocks, and other materials, such as Zr, will absorb oxygen under appropriate conditions, so they can be used as good getter substances28. Therefore, when these substances are used, no contaminants are introduced into the tank. The getter material can enter the line heater 26 through the titanium screen 25 at the line inlet. The gas in the tank can be heated to about 300 ° C to 800 ° C by the heating element 27 and returned to the receiving gas through the recovery port 29 '. When these materials are used up, use Insulation Valve 24: Insulate the system before adding new materials. The operating temperature is related to the composition of the salt bath. For typical salts, the operating temperature range is from about 650 ° C to 900 ° C. If mixed salts are used, lower operating temperatures can be used in the electrolytic process. # In fact, one of the factors limiting the maximum operating temperature is the eutectic of the container lining material and titanium. For example, a nickel lining forms a eutectic with titanium at about 950 ° C. The winch equipment 19 and 20 are used to lower the pure titanium cathode 4. The winch equipment 19 and .20 inches are connected to the cathode support frame through electrical insulation wires. Depending on the depth of the salt bath and the substrate, different lengths of cathode can be made. Initially, the bottom of the cathode was 3057twf3.doc / 008 23 538141 and the distance from the metal wool was about 15 to 20 inches. This cathode support can be in electrical contact with the circuit sub-panel, so that the circuit completes a loop. In one example, the power supply may connect the cathode lead 6 and the current distribution panel at the same time. DC power supplies can provide voltages of about 0 to 12 volts and amps of 0 to 10,000 amps. The power supply can be operated by voltage or circuit control. The current density varies between individual runs and between runs. Depending on the initial surface area of the cathode, the current density ranges from about 0 "to 0.1 to 1.4 (amps / cm2). It has been experimentally found that lower current densities can result in higher purity titanium crystals because low current densities prevent impurities from being deposited on the cathode. Among them, the preferred current density is about 0.3 (amps / cm2) and less than 0.3 Umps / cm2. However, when titanium crystals are formed, the surface area of the cathode will increase at the same time. Therefore, it is only necessary to accurately measure the current at the beginning of the electrolytic process. The density is sufficient. The data in Table 2A is shown in Figure 5, and Table 2B shows the results of the change in the starting current density from 0.1 (amps / cm2) to 1.9 (amps / cm2). As shown in the table, this data can be the same as the theoretical calculation of current optimization. When the current density in the tank is about 0.3 (amps / cm2), the same properties exist for the chitin crystals obtained from different substances. This result indicates that titanium crystals of high purity can be obtained even if ductile steel is used, if the tank is operated properly and under certain operating restrictions. The use of nickel or molybdenum (or previously mentioned inactive metals) as the container lining can increase the operating range. In one of these-operating embodiments, the voltage can be fixed and then the current can be increased until a set value is reached. In the subsequent steps, the current is fixed and μ. The voltage is reduced. The explanation of these trends includes observing that when the titanium crystal is formed on the 3057t \ vt3.doc / 008 24 538141 cathode and the resistance of the overall current decreases, the current is fixed. When the voltage decreases and the amperage increases at a fixed voltage. And according to the process requirements and anode / salt bath conditions, the variables of the electrolytic process can be changed in the above-mentioned operating range and in the change / fixed control design. After the electrolytic process, the cathode can be inserted into a receiver to isolate the cathode from the salt bath and allow the cathode to cool. During the cooling cycle, argon can be added so that the pressure in the tank is maintained at 0 to 10 psig. It is also preferable to avoid making the receiver pressure below Opsig during the cooling cycle to avoid gas leakage and contamination of titanium crystals. However, when the vessel does not leak gas φ, the pressure can also be lower than Opsig. The cooling cycle is continued until the titanium crystal deposition temperature reaches 100 ° C, preferably 50 ° c. The cathode and the deposited titanium crystals can then be removed from the cathode frame and filter by a method that includes the use of a mild acid solution to remove all surface salts' deposits. Electrolytic salts are usually caused by crystal growth or bridging: general mechanical trapping. Among them, the amount trapped is about 50 to 3000 ppm. Then, the titanium crystal is peeled from the cathode using a physical exfoliation method, and is completely wetted to remove residual salts. The more important point is to remove all the acids that appear on the crystal. The complete removal of the acid is quite β important, as the residual acid will contain impurities in the solution, and a load of evaporated acid will cause the deposition of oxides, which will contaminate the crystal and render the crystal useless. Methods of drying include using a vacuum drying method or passing hot argon through the crystals. It is also useful to use freeze-drying, but at a slower rate. The purpose of drying the crystal is to make the water and gas content less than 0.2 weight 卩:! Minutes, ratio, or reach an undetectable level to obtain higher quality 3057tvvf3.doc / 008 A single reduction reaction can produce sufficient supply An electrolytic reaction of metal wool. During the reaction, impurities less active than titanium in the chloride electromotive force sequence will either remain in the metal wool or leave the solution, and will contaminate the anode or other surfaces. Impurity elements less active than titanium tend to remain in the salts. Among them, the chloride electromotive force sequence has a key (Window) of about 0.5 volts. If the container lining is an inactive metal, this metal will not enter the solution and be deposited on the electrode. When there is no more deposition reaction on the anode, the container is prepared for the next reduction reaction. As mentioned earlier, after the anode no longer has a deposition reaction, an electrolytic reaction is performed. In the electrolytic reaction, sodium remaining in the salt bath can be stripped using sodium, and titanium can be recovered using conventional methods. In addition, after the anode no longer has a deposition reaction, the container is cooled and removed from the instrument. Then, using any conventional removal method, remove the lid and recover any remaining titanium wool. Before cooling the container, the titanium-rich salts can be treated, for example, by reacting with other reducing agents to obtain titanium wool. A preferred method of recovering titanium involves immersing the cathode deposit in a weak mineral acid solution (preferably HC1 or H2S04). Care must be taken to prevent contamination and, if possible, use clean rooms and high-purity reagents. The pH of the solution must be low enough so that all predictable impurities remain in the solution. Then, the cathode deposit is wetted until the water of the nail becomes neutral by the wetting, wherein the wetting step is, for example, using deionized water. It is possible to remove the deposit with the titanium bed, and then perform the wetting process again. If necessary, large pieces of sediment can be crushed using a titanium crusher 3057tvvf3.doc / 008 26 538141. Then, you can use a method of wetting and separating fines, and use deionized water that does not contain any fine particles on the shoulder.撸, +, θ _ work precipitates are also helpful in the wetting step. All crystallization processes involve 4 #, rfi, π, and it is better to perform the steps in a clean environment. For example, the further processing of 莆 t, a ~, the above 駄 crystals, filtration, wetting, drying, suitable for cutting off fine objects, P-__ 一 _____ 'and the steps of assembly should be in clean The room environment is not equal to two steps, and the encapsulation step performed in the environment or the post-J step in a vacuum environment = the transfer step performed should also be in a clean room environment

中進行。真空乾燥法係較好的選擇,因爲冷凍乾燥法所花 的時間較長。另外’假如氬氣純度夠的話,也可以使用熱 氨氣通過法。此外’也可以使用熱空氣,但是熱空氣可能 會導致表面氧化或者甚至燃燒。爲了獲得相當純的鈦,較 好的方式係在真空容器中以真空乾燥法乾燥鈦晶體的表 面。這些容器爲真空密封或塡充氬氣或者甚至以氬氣增 壓。In progress. The vacuum drying method is a better choice because the freeze drying method takes longer. In addition, if the purity of the argon gas is sufficient, a hot ammonia gas passing method may be used. You can also use hot air, but hot air may cause surface oxidation or even combustion. In order to obtain fairly pure titanium, it is better to dry the surface of the titanium crystals in a vacuum container by vacuum drying. These vessels are vacuum sealed or flushed with argon or even pressurized with argon.

所製造的鈦晶體具有針狀、樹枝突狀型態、有些則爲 扁豆狀、平板狀或塊狀。當電解製程係在α至/3轉換溫度 時,則垂直六角軸方向的晶體成長最快速。在上述溫度下, 晶體係長成立方體(Cubic)。 爲了獲得7N金屬純度並且使氧含量少於30ppm,Ώ]· 採用額外的純化方法,例如根據下述方法使用碘來處iE里。 表3摘要列出一般在前驅物、金屬綿、電解質晶體、恤幻 體與金屬釘塊所觀察到的雜質。其中,也列出了殘留雜質. * 一 4 (排出比)◦此數値指出製程步驟以及物質來源必須仔細| 3057twi3.doc/008 27 538141 處理以獲得高純度鈦。如上所述,需要額外製程始能完全 去除的元素包括 Fe、Cr、Zr、V、A1、Mn、Na、K、Cu、The manufactured titanium crystals have needle-like, dendritic shapes, and some are lentils, flat plates, or blocks. When the electrolytic process is at the α to / 3 conversion temperature, the crystal growth in the direction of the vertical hexagonal axis is the fastest. At the above temperature, the crystal system grows into a cube (Cubic). In order to obtain 7N metal purity and make the oxygen content less than 30 ppm, Ώ] · Use additional purification methods, such as using iodine to process iE according to the following method. Table 3 summarizes the impurities commonly observed in precursors, metal wool, electrolyte crystals, phantoms, and metal nail blocks. Among them, the residual impurities are also listed. * A 4 (emission ratio) ◦ This number indicates that the process steps and source of the material must be carefully | 3057twi3.doc / 008 27 538141 processed to obtain high purity titanium. As mentioned above, elements that need to be completely removed before additional processes include Fe, Cr, Zr, V, A1, Mn, Na, K, Cu,

Ni、U與Th。適當地使用表3所提供的資訊貝[J可以製造重 量百分比爲99.99999的鈦。表4表示額外步驟對於上述雜 質的影響。 若需要製造含氧量極少之產物,則可以進-步從混成 製程中精煉產物。其中較佳之方法,包括依序使用碘化物 製程以及上述之方法。 表3列出了再精煉的方法,以及列出每個製程階段中 雜質的量。其上列出電子工程應用上較重要的元素。表3 摘要列出處理這些元素的較佳方法。然後,使用上述之製 程處理混成槽的晶體以移除鹽類。 對於鈦濺鍍靶而言,鐵是主要的汙染物,因爲破壞濺 鍍薄膜圖案以及電路元素。爲了獲得7N純度,所獲得之 鈦耙上的鐵汙染量必須限制於少於O.Olppm。 一個鐵的主要來源就是用來製造與電解的鋼容器。鈦 金屬綿前驅物通常含有少於5ppm的鐵,而後續的金屬綿 含有約50-100ppm的鐵。TiCl4還原製程中過於極端的溫 度會使得鐵從容器壁進入金屬綿中而影響了鈦的純度。而 槽的上層結構也會產生鐵鏽。在此容器中,晶體的較大純 度等級約含有0.2至0.4ppm的鐵,一般其況下鐵的含量 少於lppm。少歐的汙染來源包括鋼製程設備以及闺圍汗 染。 採用其他容器物質,則可以大幅降低鈦晶體中的鐵含 057twf3.doc/008 28 量。例如使用鎳與鉬容器可以使得鈦晶體中的鐵含量少於 0.1 ppm。此外也可以使用其他的物質,例如鎢、鉛、與鉬 /鎳合金。當使用的材質的活性低於鉬時,則晶體中鐵的 含量係由金屬綿中鐵含量來控制。 鎳具有合理成本、易獲得、可加工、實用性、適合的 鎳-鈦共融溫度、以及根據氯化物電動勢序列所得知之電 化學不活潑性。若使用鉬、鎢、或鉑金屬則會有增加額外 的物質成本,但是這些金屬的活性更低,且這些金屬與鈦 比鎳-鈦具有更高的共融溫度。 較佳的電解環境也可以減少鐵與其他可能沈積在陰極 上之雜質的量。較低的電流密度(陰極/陽極)可使得這 些雜質較不會汙染鈦晶體。理想的電流密度約爲0.3 (amps/cm3 )或者更低。甚至即使使用鋼容器時,在這些 操作情況下所獲得之排出比約大於250比1 (使用其他的 容器物質則可以增加排出比爲大於2000比1 )。 爲了使鈦中所含的鐵汙染爲次ppm等級,則必須考慮 製程設備與其他周圍環境的鐵汙染源的可能性。因此,所 有精煉槽結構組成(除了容器之外)都應該由鈦組成或者 是鍍上鈦。唯一的限制就是在反應步驟中,當溫度高到會 與金屬反應時,任何上層結構中的鈦,都不能與TiCl4接 觸。否則,同樣的,任何會直接接觸鈦晶體的其他製程設 備的材質都應該爲純鈦。 如第6圖所示,電解溫度會影響容器(第7圖)中鐵 的排出。當溫度低於750°C時,可以有效避免排出鐵。較 3057twt3.doc/008 29 538141 佳的溫度則爲使用低於700°C的溫度。爲了獲得更高純度 甚至電解製程中之鹽浴可以使用LiCl或其他鹽類,藉以 獲得更低的溫度。降低溫度可以降低整體所需要之能量, . 並且也可以避免設備磨損或者損壞。然而,因爲這些鹽類 的親水性大於NaCl或KC1,並且購買時可能含有大量的 水氣,因此使用這些鹽類需要額外的安全設施以防止水氣 進入。鹽浴中溶解的水氣,會將氧氣加入精煉的晶體中, 所以必須要用所有可能的方法來避免。這些方法包括:1) 在使用之前,先用習知之方法,例如蒸餾法,預先乾燥鹽 φ 類;2)真空處理電解浴;3)將金屬綿與電解浴-起燒煮; 4)以乾燥氬氣覆蓋電解浴;5)藉由共還原方法製造其他 鹽類(但是不包含水氣),例如還原反應中使闬Li與Na 混合物以產生融化溫度較低的LiCl + NaCl鹽類。 _ 碘化物熱分解也是一種純化鐵或其他金屬的方法,在 ' 電子束融溶步驟中,會移除一部分的鐵,因爲在鈦的溶點 時,鐵比鈦具有更大的蒸氣壓。然而,碘化物製程會排出 大部分的金屬雜質,其範圍約爲10°/。至99%,其主要値係 依據排出氧的能力。以下將討論這點。 · 近年來,製造晶片需要使用低含氧量的鈦,因爲氧會 阻礙鈦層的沈積。下面將討論,一種含氧量低於l〇〇ppm 甚至少於30ppm的鈦的製造方法。 從金屬棉前驅物至電子束融溶步驟中具有許多的氣氣 · 汗染源。丁^14與Na都具有以氧化物或氧氯化物存在的氧, . 因此會增加後續製程中金屬綿的含氧量。在金屬綿製程中 3057twf3.doc/008 30 538141 會產生額外的氧化反應,例如當還原槽中殘流的水氣與金 屬棉反應時,會形成氧化鈦。後電解晶體製程,包括酸過 濾法以移除殘留的鹽類,所以會進一步氧化鈦晶體。並且, 若沒有使用真空反應槽或未考慮殘留水氣,則電子束融溶 製程也會導入氧。 藉由結合金屬製程製程、電解、與電子束製程,則可 以獲得含氧量低於lOOppm的鈦晶體與濺鍍靶。然而,如 下所述,以碘來處理或者分解碘化鈦可使得氧含量少於 5Oppm,並且甚至電子束融溶之原料中氧含量可以少於 φ 3 0ppm ° 爲了獲得氧含量少於30ppm之鈦,可以使用碘化物熱 分解製程,此製程包括使用高純度之鈦晶體作爲原料。碘 化物槽一致產生含氧量&lt;3〇ppm之鈦晶體條(Bar )。表5 ' 包含從鈦晶體的碘化物熱分解之典型結果。 ' 碘化物的熱分解過程,可使用與生產鈦之相同的環境 相連接,如以下所述。在此方法中,碘與鈦晶體根據以下 的反應進行。每一個反應均發生在某一大範圍的溫度下, 但在操作槽中,反應6和7發生的溫度比反應4和5高。 β (4) Ti(s) + I2(g) — Til2(g} (5) Til2(g) + I2(g) — Til4(g) (6) Ti(s) + 2I2(g) - Til4(gi 藉由以下未平衡的反應(Disproportionation Reaction ),在熱的細絲處產生沈澱。 . (7) Tii4(g) — Ti(s) + 2I2(g) 3057twt3.doc/008 538141 (8) 2TiI2(g) -&gt; Ti(s) + Til4(g) 已發現,在原料中可能出現或形成之氧化鈦,不會與 碘反應,且不被輸送到細絲。而且,此製程可能產生含氧 量非常低之高純度鈦。 已發現,藉由碘化物製程,能夠減少部份地A1、Μη、 Cu和Zr不純物。表6列出使用置入輸入孔3Ν至4Ν的純 鈦金屬綿和/或晶體,所獲得之結果的結論。結果爲處理 碘製程與相同環境下之金屬綿的結合,產生如上述的晶 體。 電子束融溶和其他高真空融溶方法,能藉由移除可揮 發的金屬不純物而進一步純化鈦。一般而言,低溶點和/ 或高蒸氣壓的金屬,能藉由電子融溶而移除,亦歸因於電 子束的精煉(Refining )。例如,A1和Μη在鈦的溶點溫度, 均有比鈦高的蒸氣壓,兩者可在電子束融溶期間被部份移 除。 爲了減少含氧而與電子束融溶結合,許多技術已獲得 證明。在鈦晶體和融溶反應室兩者之殘餘的水氣,能視爲 氧的來源,且增加鈦塊(Ti Ingot )的含氧程度。在融溶 期間保持高真空程度是不足以移除所有殘餘的水氣,所以 需要提供額外的水氣移除方法。其中一方法包括在融溶晶 體或碘條之前,在分離的吸氣劑爐底中融溶鈦,以從反應 室移除水氣。第—種方法是將融溶反應室壁和輸人孔加 熱,以增加從壁和晶體蒸發出的水。此結果是一可控制的 電子束大氣壓,其中氧含量是可忽略的。 3057tvvf3.doc/O08 538141Ni, U and Th. Proper use of the information provided in Table 3 [J can produce titanium with a weight percentage of 99.99999. Table 4 shows the effect of the additional steps on the above impurities. If a product with very low oxygen content is required, the product can be further refined from the compounding process. The preferred methods include the sequential use of the iodide process and the methods described above. Table 3 lists the refining methods and the amount of impurities in each process stage. It lists the more important elements in electrical engineering applications. Table 3 summarizes the best methods for dealing with these elements. The mixed crystals are then processed using the process described above to remove salts. For titanium sputtering targets, iron is the main contamination because it destroys the sputtered film pattern and circuit elements. In order to obtain 7N purity, the amount of iron contamination on the obtained titanium harrow must be limited to less than 0.01 ppm. A major source of iron is steel containers used to make and electrolyze. Titanium metal wool precursors typically contain less than 5 ppm iron, while subsequent metal wools contain about 50-100 ppm iron. Excessive temperature in the TiCl4 reduction process will cause iron to enter the metal wool from the container wall and affect the purity of titanium. The superstructure of the grooves also produces rust. In this container, the larger purity grades of the crystals contain about 0.2 to 0.4 ppm of iron, and generally the iron content is less than 1 ppm. The sources of pollution in Shao Europe include steel processing equipment and perspiration. With other container substances, the iron content in titanium crystals can be greatly reduced 057twf3.doc / 008 28. For example, the use of nickel and molybdenum containers allows the iron content of titanium crystals to be less than 0.1 ppm. Other materials such as tungsten, lead, and molybdenum / nickel alloys can also be used. When the material used is less active than molybdenum, the iron content in the crystal is controlled by the iron content in the metal wool. Nickel has reasonable cost, easy availability, workability, practicality, suitable nickel-titanium eutectic temperature, and electrochemical inertness based on chloride electromotive force sequences. The use of molybdenum, tungsten, or platinum metals has additional material costs, but these metals are less active and these metals have a higher eutectic temperature with titanium than nickel-titanium. A better electrolytic environment also reduces the amount of iron and other impurities that may be deposited on the cathode. The lower current density (cathode / anode) makes these impurities less contaminated with titanium crystals. The ideal current density is about 0.3 (amps / cm3) or lower. Even when a steel container is used, the discharge ratio obtained under these operating conditions is about 250 to 1 (the use of other container substances can increase the discharge ratio to more than 2000 to 1). In order to make the iron pollution in titanium to the sub-ppm level, the possibility of iron pollution sources in the process equipment and other surrounding environments must be considered. Therefore, all refining tank structures (except vessels) should be composed of titanium or plated with titanium. The only limitation is that in the reaction step, when the temperature is high enough to react with the metal, any titanium in the superstructure cannot contact TiCl4. Otherwise, similarly, any other process equipment that directly contacts the titanium crystal should be made of pure titanium. As shown in Figure 6, the temperature of the electrolysis affects the discharge of iron from the container (Figure 7). When the temperature is lower than 750 ° C, the iron can be effectively avoided. A temperature better than 3057twt3.doc / 008 29 538141 is to use a temperature below 700 ° C. In order to obtain higher purity and even the salt bath in the electrolytic process, LiCl or other salts can be used to obtain lower temperatures. Lowering the temperature can reduce the overall energy required, and also avoid equipment wear or damage. However, because these salts are more hydrophilic than NaCl or KC1 and may contain a large amount of water vapor when purchased, the use of these salts requires additional safety facilities to prevent water vapor from entering. The water vapor dissolved in the salt bath will add oxygen to the refined crystals, so it must be avoided by all possible means. These methods include: 1) prior to use, conventional methods, such as distillation, dry the salt φ in advance; 2) vacuum treatment of the electrolytic bath; 3) the metal wool and the electrolytic bath-cooking; 4) drying The argon gas covers the electrolytic bath; 5) other salts are produced (but not including water vapor) by a co-reduction method, such as mixing 闬 Li and Na in a reduction reaction to produce LiCl + NaCl salts with a lower melting temperature. _ Iodide thermal decomposition is also a method of purifying iron or other metals. In the electron beam melting step, a part of the iron is removed because at the melting point of titanium, iron has a higher vapor pressure than titanium. However, the iodide process discharges most of the metal impurities, which range is about 10 ° /. To 99%, it is mainly based on the ability to discharge oxygen. This will be discussed below. · In recent years, the manufacture of wafers has required the use of titanium with a low oxygen content, since oxygen can hinder the deposition of titanium layers. A method for producing titanium having an oxygen content of less than 100 ppm or even less than 30 ppm will be discussed below. There are many sources of gas and sweat from the metal wool precursor to the electron beam melting step. Both D14 and Na have oxygen in the form of oxides or oxychlorides. Therefore, the oxygen content of metal wool in subsequent processes will be increased. In the process of metal wool 3057twf3.doc / 008 30 538141, there will be additional oxidation reactions, such as the formation of titanium oxide when the residual water in the reduction tank reacts with the metal cotton. The post-electrolytic crystal process includes acid filtration to remove residual salts, so titanium oxide crystals are further added. In addition, if a vacuum reaction tank is not used or residual moisture is not taken into account, oxygen is also introduced into the electron beam melting process. By combining metal process, electrolysis, and electron beam process, titanium crystals and sputtering targets with oxygen content below 100 ppm can be obtained. However, as described below, treating or decomposing titanium iodide with iodine can make the oxygen content less than 50 ppm, and even the content of the electron beam melted material can be less than φ 30 ppm. To obtain titanium with an oxygen content less than 30 ppm You can use iodide thermal decomposition process, this process includes using high-purity titanium crystals as raw materials. The iodide bath consistently produced titanium crystal bars (Bar) with an oxygen content of <30 ppm. Table 5 'Typical results of thermal decomposition of iodide containing titanium crystals. '' The thermal decomposition process of iodide can be connected using the same environment as that used to produce titanium, as described below. In this method, iodine and titanium crystals are reacted according to the following reaction. Each reaction occurs at a wide range of temperatures, but in the operating tank, reactions 6 and 7 occur at a higher temperature than reactions 4 and 5. β (4) Ti (s) + I2 (g) — Til2 (g) (5) Til2 (g) + I2 (g) — Til4 (g) (6) Ti (s) + 2I2 (g)-Til4 ( gi The following unbalanced reaction (Disproportionation Reaction) causes precipitation at the hot filament. (7) Tii4 (g) — Ti (s) + 2I2 (g) 3057twt3.doc / 008 538141 (8) 2TiI2 (g)-&gt; Ti (s) + Til4 (g) It has been found that titanium oxide, which may appear or form in the raw material, does not react with iodine and is not transported to the filament. Moreover, this process may produce High-purity titanium with very low oxygen content. It has been found that by the iodide process, some of the A1, Mn, Cu, and Zr impurities can be reduced. Table 6 lists the use of pure titanium metal wool and 3N to 4N input holes. / Or crystal, the conclusion of the result obtained. The result is that the combination of the iodine process and the metal wool in the same environment produces the crystal as described above. Electron beam melting and other high vacuum melting methods can be removed by removing Titanium is further purified by volatile metal impurities. In general, metals with low melting points and / or high vapor pressures can be removed by electron melting, which is also attributed to electron beam refining For example, the melting point of A1 and Mn in titanium have a higher vapor pressure than titanium, and both of them can be partially removed during the melting of the electron beam. In order to reduce the oxygen content and combine with the melting of the electron beam, many The technology has been proven. The residual water vapor in both the titanium crystal and the melting reaction chamber can be regarded as a source of oxygen and increase the oxygen content of the titanium ingot (Ti Ingot). The degree of high vacuum maintained during the melting is Not enough to remove all remaining water vapor, so additional water vapor removal methods need to be provided. One method involves melting titanium in the bottom of the separate getter furnace to melt the The chamber removes water vapor. The first method is to heat the melting reaction chamber wall and the manhole to increase the water evaporated from the walls and crystals. The result is a controllable electron beam atmospheric pressure, where the oxygen content is Ignored. 3057tvvf3.doc / O08 538141

Cr對濺鍍膜(Sputtering Film)的影響與Fe相同,且 比如對改善濺鍍靶成果而言,Cr的移除是相當重要的。爲 了達到含7N的金屬,完成的濺鍍靶之Cr含量需&lt;0.05 ppm。 在TiCl4、Na、金屬綿和傳統鋼鐵之還原和電解容器, 發現有少量的Cr存在。有趣的是,金屬綿通常包含超過 其前趨物的Ci*,意即製程設備(比如容器、供給管線等) 成爲金屬綿中之金屬綿不純物的最主要原因。 因爲Cr的含量相當少,所以不需要額外純化TiCl4。 一般商業購買到的鈉中Cr的含量約爲5PPm,然而也可以 獲得更高純度的鈉,此高純度鈉的Cr含量約爲lppm。獲 得高純度鈦的方法包括過濾融溶鈉,藉以移除金屬氧化 物。例如可使_鎳管線,因爲鎳管線不含有Cr以及其他 出現於鋼中的金屬。這種方法所獲得之鈦金屬綿的Cr含 量約爲〇.5ppm 〇 在電解製程中只會排出部份的Cr,其排出比約爲5:1。 在更高純度的金屬綿中,鈦晶體的Cr含量約爲O.lppm。 碘化物製程與電子束融溶製程通常可以移除Cr,即使 一般預測Ti與Cr蒸氣壓的差異不會造成純化。可接受的 移除比約爲3 : 1,此時可使得鈦塊的Cr含量約少於 0.02ppm。並且使用較久的爐火力□熱時間或者使用較高的 特定電子束功率,也有助於移除現象。The effect of Cr on the sputtering film is the same as that of Fe, and for example, to improve the results of the sputtering target, the removal of Cr is very important. In order to reach a metal containing 7N, the Cr content of the completed sputtering target needs to be <0.05 ppm. A small amount of Cr was found in the reduction and electrolytic vessels of TiCl4, Na, metal wool and traditional steel. Interestingly, metal wool usually contains more Ci * than its predecessors, which means that process equipment (such as containers, supply lines, etc.) has become the most important cause of metal wool impurities in metal wool. Because the Cr content is relatively small, no additional purification of TiCl4 is required. The commercially available sodium has a Cr content of about 5 PPm, but higher purity sodium can also be obtained. The high purity sodium has a Cr content of about 1 ppm. Methods for obtaining high-purity titanium include filtering molten sodium to remove metal oxides. For example, nickel pipelines can be used because nickel pipelines do not contain Cr and other metals that occur in steel. The Cr content of the titanium wool obtained by this method is about 0.5 ppm. Only a part of Cr is discharged during the electrolytic process, and the discharge ratio is about 5: 1. In the higher-purity metal wool, the Cr content of titanium crystals is about 0.1 ppm. The iodide process and the electron beam melting process can usually remove Cr, although it is generally predicted that the difference between the vapor pressures of Ti and Cr will not cause purification. The acceptable removal ratio is about 3: 1, and the Cr content of the titanium block can be less than about 0.02 ppm. Also, longer furnace heating time or higher specific electron beam power can also help remove the phenomenon.

在濺鍍靶應用上,銷(Zirconium ; Zr)/釩(Vanadium ; V) 不會造成多大的問題。然而,爲了獲得7N物質,Zr與V 3057t\vi3.doc/008 538141 的含量都必須少於〇.〇2ppm(全部爲0_04ppm)。 一般購買到的鈉中約含有2ppm的Zr以及8ppmV,曰斤 以會汙染金屬綿。電精煉、碘化物製程、以及電子束融溶 均無法移除Zr/V。Zr/V的還原傾向類似於鈦,因爲在電 解製程中只會排出部份的Zr,並且一點也不會排出V。同 樣地,在碘化物製程中,Zr/V的性質類似於Ti,所以限 制了精煉步驟的能力。而且由於蒸氣壓的因素,所以在電 子束融溶步驟中Zr/V不會蒸發。 一種降低Zr/V含量的方法,就是精煉金屬綿前驅物以 φ 符合鈦塊之需求。通常可過濾Na,以移除金屬氧化物, 特別是從CaCl2產生的氧化鈣,CaCl2的目的爲降低NaCl 還原製程的操作溫度。過濾步驟並不會完全移除所有的金 囑氧化物,特別是稀少量的氧化物。所以,鈉必須經由簡 ' 單的蒸觀步驟來達到精煉的目的。在此製程中,可移除Zr/V ; 氧化物汙染物移以達到所需之等級,其中Zr/V氧化物的 融化與沸騰溫度高於鈦。所以,可藉由蒸餾步驟以避免其 他的汙染物進入鈉中。此純化步驟可獲得Zr/V含量少於 O.lppm的鈉◦後續的電精煉製程會使得鈦晶體中的Zr/V · 總合少於〇.〇4Ppm 次要汙染物(A 卜 Μη、Na、K、U、Th、Cu、及 Ni): 上面所述之元素係次要汙染物,因爲可追蹤這些汙染 物的來源,並S/在不同的精煉步驟中,可以完全被移除, 所以這些元素可列爲次汙染物。下面所述係每個製程階段 或相對應的前驅物,以及如何移除這些元素。 3057twt3.doc/008 34 538141In sputtering target applications, pins (Zirconium; Zr) / Vanadium (Vanadium; V) do not cause much problem. However, in order to obtain the 7N substance, the contents of Zr and V 3057t \ vi3.doc / 008 538141 must be less than 0.02 ppm (all of which are 0_04 ppm). Generally purchased sodium contains about 2ppm of Zr and 8ppmV, which can contaminate metal wool. Zr / V cannot be removed by electrorefining, iodide processes, and electron beam melting. The reduction tendency of Zr / V is similar to that of titanium, because only a part of Zr is discharged during the electrolytic process, and V is not discharged at all. Similarly, in the iodide process, Zr / V has properties similar to Ti, so it limits the ability of the refining step. And because of the vapor pressure, Zr / V does not evaporate during the electron beam melting step. One way to reduce the Zr / V content is to refine the metal wool precursor to meet the needs of the titanium block with φ. Generally, Na can be filtered to remove metal oxides, especially calcium oxide generated from CaCl2. The purpose of CaCl2 is to reduce the operating temperature of the NaCl reduction process. The filtration step does not completely remove all gold oxides, especially the rare oxides. Therefore, sodium must be refined through a simple steaming step. In this process, Zr / V can be removed; oxide contaminants are moved to the required level, where the melting and boiling temperatures of Zr / V oxides are higher than titanium. Therefore, a distillation step can be used to prevent other contaminants from entering the sodium. This purification step can obtain sodium with a Zr / V content of less than 0.1 ppm. The subsequent electrorefining process will make the Zr / V in the titanium crystal less than 0.004Ppm in total. Minor pollutants (A, Bmη, Na , K, U, Th, Cu, and Ni): The above-mentioned elements are minor pollutants, because the source of these pollutants can be traced, and S / can be completely removed in different refining steps, so These elements can be classified as minor pollutants. The following are descriptions of each process stage or corresponding precursor, and how to remove these elements. 3057twt3.doc / 008 34 538141

TiCl4/Na :這些金屬綿前驅物包含少量的上述元素, 但是放射性元素U與Th除外。蒸餾鈉只會部份移除任何 的金屬氧化物(例如,A1203),然而對於製造7N鈦物質 而言,並不需要完全移除金屬氧化物。 電解: 根據熱力學之預測,電解步驟並不會排出Cu。然而, 會排出部份的A1,以及大量的ΝΠ。Μη則完全不會被排出 來,並且通常會從金屬綿製程與電解製程之鋼容器中獲 得。使用Ni或Mo襯裡容器,可消除容器壁6之Μη汙染 物。 鈦晶體過濾: 過濾步驟係用來移除鈦晶體上的殘留鹽類,特別是 NaCl與KC1,所以可降低Na與Κ含量。 碘化物製程:完全無法有效降低上述的元素含量,並 且只能部份移除Zr、A1與Mr^ 電子束融溶:某些上述元素比鈦更容易揮發,所以在 電子束融溶步驟中可完全被移除。晶體中Ni、U、及Th 的含量不多,所以不需要額外的純化步驟。基本上,剩下 的這些元素完全被移除掉。表7包括元素的蒸氣壓數値, 以及其大約的移除比。 下面的例子,可進一步用來解釋本發明。 例1 (混合物槽電解) 對還原時期和伴隨發生的電解兩者而言,混合物槽巳 完成操作。韌性鋼容器之前已用於四個金屬綿的製造反 3057t\vG.doc/O08 538141 應,所以Τί-Fe合金層出現於壁上。最初,4,650 lbs的融 溶Na已供給至槽容器,且保持在含氬的大氣壓下t Na與 11,220 lbs的TiCl4反應,所得到之結果溶液(Resulting Bath)包括約含2,010 lbs的Ti金屬綿,以及11,820 lbs 的 NaCl,以及約含 2,040 lbs 的 TiCl2。 充份地將容器冷卻,並移除在還原期間使用之半球形 蓋子,改用爲電解而設計的蓋子.。需小心進行,以減小在 蓋子交換期間可能進入容器的任何污染。將容器置放回電 解處,且組合需要的元件(比如閘閥、轉換捲軸、電流連 接物全部的組合需做滲透檢查,以確保其真空度。 將融爐加熱至850°C,且將容器浸泡約12個小時。之 後將溫度增加至900T:,並將熱井(Thermowell)插入槽 容器內,以偵測鹽浴的溫度,其溫度爲825°C。 接收器抽至9微米的真空度。抽氣的程度,通常是表 示真空系統和在裝置內壁表面所吸收之水氣量之間的平 衡。當抽真空後,將此槽容器塡滿氬氣,至其壓力約爲4 psig,在反應進行的期間需保持此壓力。 在熱井插入期間,根據所測量的陰極深度,第一次反 應的進行使用36吋長的陽極。將組合的陽極下降至鹽浴 內,且打開電源供應器。開始時,電壓設定在6伏特,電 流設定在2500安培。此導致起始電流密度約爲0.5安培/ 公分2。然後在電流的控制下進行此反應。表8顯示此實 驗數據。 當陽極和鈦晶體沈積物已移至接收器內,且將其冷卻 SOSTtwil.doc/OOS 36 538141 後,此反應持續66.5小時。在冷卻循環期間,至少剛開始 時,此熱的晶體暴露在槽容器氣體中,此氣體可能被晶體 吸收,此氣體比如是殘餘的氧氣。在冷卻循環期間,使用 加壓空氣來冷卻接收器的外部,以加速冷卻循環的效果, 以減少晶體受污染源影響的時間。 冷卻之後,接收器置於接收站(Harvesting Station) 的上方,且降低接收之晶體以進入過濾酸槽中。此過濾酸 槽內包含由0.5%硫酸/0.5%檸檬酸(Citric)所組成之1%的 酸性溶液。將接收之晶體保留在過濾槽內約30分鐘,然 φ 後將其轉移至相同的槽和溶液中並置放17小時。一但移 除外表的鹽(Superficial Salt )(拖延;Dragout ),則延長 過濾時間的其中一個影響,是移除堵塞或被機械性陷住的 鹽至某一程度。當過濾循環後,移除殘餘的拖延鹽,且可 ^ 能輕微地鈾刻晶體表面,則獲得的鈦以去離子水覆蓋3次。 : 如果有遺留未被水沖洗且能導致顯著的化學燃燒(比如表 面氧化)的酸,需將其有效地移除。用手工將鈦晶體從陽 極移除,且藉由去離子的噴灑於晶體上而完全地沖洗約2 小時。藉由吹熱氬氣通過晶體而將其乾燥,直至水氣含量 ® 的重量百分比約爲0.1%。 將樣品進行分析,結果如表9所示。包含在表中是一 般藉由在韌性鋼容器內進行的鈦金屬綿之融溶鹽電解所生 產的晶體,與本例子的比較純度範圍(Comparative Purity Range)。從數據可明顯地看出,在相同環境下產生的鈦晶 - 體,證明改善的純度程度。較低的Fe支持此論點,略去 3057t\vt3.doc/〇08 37 538141 的金屬綿製程步驟,明顯地造成在隨後產生的晶體之Fe 污染的貢獻。此數據亦支持Mo襯裡槽容器將明顯地降低 Fe的污染,且容許含約O.Olppm的Fe之晶體的製造◦觀 察到較低的氧,是由於鹽水氣減少的原因,其中此水氣係 做爲氧來源。 根據計算,電解質的實驗有超過50%之電流效益 (Current Efficiency )。 另一個例子是不同形態的晶體。三種可明顯分辨的結 晶結構:平面六邊形、小樹枝狀和大天然礦塊。只針對氧 φ 之分析的結果列於表10。其中包含沒有特殊形態被分離之 標準樣品。如所預期的,樣品之表面積對重量比(Surface Area-to-weight)與含氧量的程度相關性非常高,於是增加 表面積對晶體體積比之重要性。 _ 應了解的是,顯現在表4、表6和表7的結果,可藉 由增加真空度、使用低電流密度、增加挖溝能力、降低溫 度、擴大幫浦時間、提供容器襯裡和利用相同的技術而獲 得改善。 例2 (碘化物熱分解) · 第8圖描述典型的碘化物槽,用來處理高純度Ti晶 體,以降低氧含量。在此例子中,所有的槽元件最初用乙 醇淸洗,以降低污染的可能。容器2被放置在融爐1內, FL加熱至150 C兩小時,以趨走殘留的水氣和淸除試劑.TiCl4 / Na: These metal wool precursors contain a small amount of the above elements, except for the radioactive elements U and Th. Distilled sodium will only partially remove any metal oxides (for example, A1203). However, for the manufacture of 7N titanium, it is not necessary to completely remove the metal oxides. Electrolysis: According to the prediction of thermodynamics, the electrolysis step will not release Cu. However, a part of A1 will be discharged, and a large amount of NΠ. Mn is not discharged at all, and is usually obtained from steel containers for metal wool and electrolytic processes. The use of Ni or Mo lined containers eliminates the Mn contamination of the container wall 6. Titanium crystal filtration: The filtration step is used to remove residual salts on titanium crystals, especially NaCl and KC1, so the Na and K content can be reduced. Iodide process: The above elements cannot be effectively reduced, and Zr, A1 and Mr ^ can only be partially removed. Electron beam melting: Some of the above elements are more volatile than titanium, so they can be used in the electron beam melting step. Completely removed. The content of Ni, U, and Th in the crystal is small, so no additional purification step is required. Basically, the remaining elements are completely removed. Table 7 includes the element's vapor pressure number 値 and its approximate removal ratio. The following examples can be used to further explain the present invention. Example 1 (Mixture Tank Electrolysis) For both the reduction period and the concomitant electrolysis, the mixture tank 巳 was completed. Ductile steel containers have previously been used in the manufacture of four metal wools. Therefore, a Ti-Fe alloy layer appears on the wall. Initially, 4,650 lbs of molten Na has been supplied to the tank container, and t Na is reacted with 11,220 lbs of TiCl4 at an atmospheric pressure containing argon. The resulting solution (Resulting Bath) includes about 2,010 lbs of Ti metal wool. And 11,820 lbs of NaCl, and about 2,040 lbs of TiCl2. Thoroughly cool the container and remove the hemispherical lid used during the reduction. Use a lid designed for electrolysis. Care should be taken to reduce any contamination that may enter the container during cap exchange. Put the container back to the electrolytic place, and the required components (such as the gate valve, the conversion reel, and the current connection) need to be inspected to ensure their vacuum. Heat the furnace to 850 ° C and soak the container About 12 hours. Then increase the temperature to 900T :, and insert a thermowell into the tank container to detect the temperature of the salt bath, which is 825 ° C. The receiver is evacuated to a vacuum of 9 microns. The degree of evacuation usually indicates the balance between the vacuum system and the amount of water and gas absorbed on the inner wall surface of the device. After evacuation, the tank container is filled with argon to a pressure of about 4 psig. This pressure should be maintained during the process. During the insertion of the hot well, the first reaction was performed using a 36-inch anode based on the measured cathode depth. The combined anode was lowered into the salt bath and the power supply was turned on. Initially, the voltage was set at 6 volts and the current was set at 2500 amps. This resulted in an initial current density of about 0.5 amps / cm 2. Then the reaction was performed under the control of current. Table 8 shows the experimental data. When After the anode and titanium crystal deposits have been moved to the receiver and cooled down SOSTtwil.doc / OOS 36 538141, the reaction lasts 66.5 hours. During the cooling cycle, at least initially, this hot crystal is exposed to the tank container This gas may be absorbed by the crystal, such as residual oxygen. During the cooling cycle, pressurized air is used to cool the outside of the receiver to accelerate the effect of the cooling cycle and reduce the time that the crystal is affected by the pollution source. After cooling, the receiver is placed above the Harvesting Station, and the received crystals are lowered into the filtering acid tank. This filtering acid tank contains 0.5% sulfuric acid / 0.5% citric acid. % Acidic solution. Keep the received crystals in the filter tank for about 30 minutes, then transfer them to the same tank and solution and leave them for 17 hours. Once the external salt (Superficial Salt) is removed (delay; Dragout), one of the effects of extending the filtering time is to remove the blocked or mechanically trapped salt to a certain degree. After the filtering cycle, the remaining drag is removed Salt, and the surface of the crystal may be slightly uranium etched, then the obtained titanium is covered with deionized water 3 times.: If there is any acid that has not been washed with water and can cause significant chemical combustion (such as surface oxidation), the It is effectively removed. The titanium crystals are manually removed from the anode, and completely rinsed for about 2 hours by spraying the crystals with deionization. They are dried by blowing hot argon through the crystals until water vapor The content of the content ® is about 0.1% by weight. The samples are analyzed and the results are shown in Table 9. Included in the table are crystals generally produced by the molten salt electrolysis of titanium metal wool in a tough steel container. Comparative Purity Range compared to this example. It is clear from the data that titanium crystals produced under the same environment demonstrate an improved degree of purity. The lower Fe supports this argument, omitting the metal wool process steps of 3057t \ vt3.doc / 〇08 37 538141, which obviously contributes to the Fe contamination of the subsequent crystals. This data also supports that Mo-lined tank vessels will significantly reduce Fe contamination, and allow the manufacture of crystals containing about 0.01 ppm Fe Fe. The lower oxygen was observed due to the decrease in brine gas, where this water-gas system As a source of oxygen. According to calculations, the electrolyte experiment has a current efficiency of over 50%. Another example is crystals of different morphologies. Three clearly distinguishable crystalline structures: flat hexagons, small dendrites, and large natural nuggets. The results of the analysis for oxygen φ are shown in Table 10. It contains standard samples with no special morphology. As expected, the correlation between the surface area-to-weight ratio of the sample and the degree of oxygen content is very high, so increasing the importance of surface area to crystal volume ratio. _ It should be understood that the results shown in Tables 4, 6 and 7 can be increased by increasing the degree of vacuum, using a low current density, increasing the trenching ability, lowering the temperature, increasing the pumping time, providing the container lining and using the same Technology. Example 2 (Iodide Thermal Decomposition) Figure 8 depicts a typical iodide tank used to process high-purity Ti crystals to reduce oxygen content. In this example, all tank elements were initially rinsed with ethanol to reduce the possibility of contamination. The container 2 is placed in the melting furnace 1, and the FL is heated to 150 C for two hours to remove the residual water vapor and remove the reagent.

Mo襯裡和Mo濾網5被放置在容器2內3約13磅的Ti品 · 體3加至容器壁和濾網5之間◦長度70cm且直徑0.35cm的 3057twt3.doc/008 38 538141The Mo lining and Mo strainer 5 are placed in the container 2 and about 13 pounds of Ti product. The body 3 is added between the container wall and the strainer 5 3057twt3.doc / 008 38 538141 with a length of 70cm and a diameter of 0.35cm.

Ti 細絲(Filament) 4 與 Mo 輸入孔穿越竿(Feed-through Rods ) 6,附隨著在蓋子裝配8上的陶瓷輸入孔穿越 (Feed-through ) 7。真空潤滑脂(Vacuum Grease )用於〇 環(O-ring),且蓋子用於密封此容器。架構所有剩餘的連 接(如真空線、氬氣線、碘輸入孔等)。 將容器加熱12小時至約300°C〜850°C,當系統被抽真 空至約小於lOmtorr,以移除Ti晶體輸入孔中殘留的水氣。 隨後,將融爐的溫度設定到750°C。 電線(Electrical Leads)附隨著細絲,以供給電阻加 熱細絲至約1300°C。充足的碘被輸送至槽,以啓動反應9 -於進行維持適當反應條件期間,監控容器壁的溫度和細 絲。在操作期間,蓋子用水冷卻,以保護0環的完整。 進行到最後約100小時,且產生約1 650克包含少於 30ppm氧的Ti晶體條。放入晶體可估計包含介於100至 200ppm的氧,導致整個的還原超過70%。 例3 (在Mo襯裡容器電解) 市售地純Mo係在高10吋和直徑5吋的容器襯裡內 製造,且其大小與容器符合。Ti金屬綿、NaCh KC1和TiCl2 的預定程度被直接裝入容器內,之後將容器放置於融爐 內。容器被抽真空、回塡氬氣,且充份地加熱以完全地融 化此鹽浴。當電解質已被融溶之後,市售地純Ti陽極被 降低至鹽浴內。維持鹽浴的溫度,則在電解期間可以控制 融溶的混合物的黏度。電解完後,將容器冷卻,且將Ti 晶體從容器內移出。在酸性下過濾Ti晶體,真空乾燥乩 3057t\vl3.doc/008 39 538141 分析金屬不純物。 表11列出在Mo襯裡的容器和Fe容器完成電解的相 關結果。可以看出,產生的晶體裏沒有呈現Mo的污染。 然而,Fe有顯著的污染,且明顯地指出,在生產高純度Ti 方面,Μ 〇是較佳的襯裡。 雖然本發明已以一較佳實施例揭露如上,然其並非 用以限定本發明’任何熟習此技藝者,在不脫離本發明之 精神和範圍內,當可作各種之更動與潤飾,因此本發明之 保護範圍當視後附之申請專利範圍所界定者爲準。 3057tvvf3.doc 008 40Ti filaments (Filament) 4 and Mo input-through rods (Feed-through Rods) 6, attached to the ceramic input holes (Feed-through) 7 on the lid assembly 8. Vacuum Grease is used for O-ring, and the lid is used to seal the container. Frame all remaining connections (eg vacuum line, argon line, iodine input hole, etc.). Heat the container for 12 hours to about 300 ° C ~ 850 ° C. When the system is evacuated to less than about 10mtorr to remove the residual moisture in the Ti crystal input hole. Subsequently, the temperature of the melting furnace was set to 750 ° C. Electrical wires are attached to the filaments to supply resistance heating filaments to approximately 1300 ° C. Sufficient iodine is delivered to the tank to initiate the reaction 9-the temperature and filaments of the vessel wall are monitored during the maintenance of appropriate reaction conditions. During operation, the lid is cooled with water to protect the integrity of the O-ring. This lasted about 100 hours and produced about 1 650 grams of Ti crystal strips containing less than 30 ppm oxygen. The crystals are estimated to contain between 100 and 200 ppm of oxygen, resulting in a total reduction of more than 70%. Example 3 (Electrolyzed in Mo-lined container) Commercially available pure Mo was manufactured in a container liner with a height of 10 inches and a diameter of 5 inches, and its size matched the container. Ti metal wool, NaCh KC1 and TiCl2 are directly filled into the container, and then the container is placed in the melting furnace. The vessel was evacuated, returned to argon, and heated sufficiently to completely melt the salt bath. After the electrolyte has been melted, commercially available pure Ti anodes are lowered into the salt bath. By maintaining the temperature of the salt bath, the viscosity of the molten mixture can be controlled during electrolysis. After the electrolysis was completed, the container was cooled and the Ti crystals were removed from the container. The Ti crystals were filtered under acidic conditions, and vacuum-dried 乩 3057t \ vl3.doc / 008 39 538141 to analyze metal impurities. Table 11 lists the results of the electrolysis performed on the Mo-lined and Fe vessels. It can be seen that the resulting crystals do not exhibit Mo contamination. However, Fe is significantly contaminated and it is clearly pointed out that MO is a better lining in the production of high-purity Ti. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. 'Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. 3057tvvf3.doc 008 40

Claims (1)

538141 一系統於電解期間控制複數個電流密度。 7. —種用於生產高純度鈦之系統,包括如申請專利 範圍第1項所述之裝置和一電子束融爐,用來純化由該裝 置所生產之該鈦產物。 8. 如申請專利範圍第1項所述之裝置,更包括一電子 束融爐。 9. 如申請專利範圍第1項所述之裝置,其中更包括 一上層結構可配置於該外層上方,該外層包括一閘閥、一 轉換捲軸、一電流配電器、一熱套承受器、一搬運承受器 * 和一絞盤套。 10. 如申請專利範圍第9項所述之裝置,其中該上層 結構係由鈦、不銹鋼、鉬、鎳、一鉬鎳合金,和上述之合 . 金所組成。 11. 一種製造高純度鈦金屬之裝置,包括: 一槽容器; 一系統裝滿複數個反應物輸入至該槽容器內; 一上層結構可配置在該槽容器上方; · 複數個控制壓力和溫度的系統; 一電解系統,可在該槽容器內於相同的環境下電解複 數個反應產物;以及 一吸氣系統,在電解移除氧之前、之間和之後,經由 _ 一加熱吸氣物質,可循環該槽容器內產生之氣體。 12. 如申請專利範圍第11項所述之裝置,其中該槽 * 容器包括一外層含一抗氧化物質;以及一內層位於該外層 42 538141 內部,該內層有一金屬材質的一反應物容器表面,該金屬 在氯化物電動勢序列上比鈦不活潑。 13. 如申請專利範圍第11項所述之裝置,其中該上 層結構包括一閘閥、一轉換捲軸、一電流配電器、一熱套 承受器、一搬運承受器和一絞盤套。 14. 如申請專利範圍第11項所述之裝置,其中該上 層結構係由鈦、不銹鋼、鉬、鎳、一鉬鎳合金、或上述之 合金所組成。 15. 如申請專利範圍第12項所述之裝置,其中該反 應物容器表面的材質包括鉬、鎳或一鉬鎳合金。 16. 如申請專利範圍第11項所述之裝置,其中更包 括一火爐適於容納該槽容器。 17. 如申請專利範圍第11項所述之裝置,其中在還 原製程期間,該槽容器被密封。 18. 如申請專利範圍第11項所述之裝置,其中更包 括一系統,其係於電解期間控制複數個電流密度。 19. 一種用於生產高純度鈦之系統,包括如申請專利 範圍第11項所述之裝置和一電子束融爐,用來純化由該 裝置所生產之該鈦產物。 20. —種用於生產高純度鈦之系統,包括如申請專利 範圍第11項所述之裝置和一熱碘化物分解系統,其中在 該裝置產生的鈦與碘反應。 21. —種用於生產高純度鈦之系統,包括如申請專利 範圍第11項所述之裝置、一熱碘化物分解系統和一電子 43 538141 束融爐。 22. —種生產高純度鈦的方法,包括: 將一四氯化鈦與一還原劑在一容器內進行反應,該還 原劑包括鹼金屬和/或鹼土金屬,以生成一鈦金屬綿和融 溶鹼金屬和/或鹼土金屬鹽; 在該容器內氯化該融溶鹼金屬和/或鹼土金屬鹽; 在該容器內保留至少部分所產生之該鈦金屬棉,以作 爲一陽極; 在該容器內於相同的環境下,電解該鈦金屬綿,以產 ® 生一鈦晶體; 回收該容器內之該鈦晶體;以及 從該回收的該鈦晶體上移除該鹽。 . 23. 如申請專利範圍第22項所述之方法,其中更包 括一二氯化鈦加入該容器內,以幫助氯化該鹽。 24. 如申請專利範圍第22項所述之方法,其中藉由 該四氯化鈦與該鈦金屬綿在該容器內反應,以完成該鹽的 氯化。 _ 25. 如申請專利範圍第24項所述之方法,其中該鈦 金屬綿包括在該容器內生成之該鈦金屬綿。 26. 如申請專利範圍第22項所述之方法,其中該容 器有一反應物接觸表面,該反應物接觸表面本質上由一金 屬所組成,該金屬在電化學方面根據氯化物的電動勢序列 係比鈦更不活潑。 ^ 27. 如申請專利範圍第26項所述之方法,其中該反 44 538141 應物接觸表面的該金屬包括鉬、鎳、或鉬和鎳的合金。 28. 如申請專利範圍第22項所述之方法,其中該還 原劑包括至少一鈉、錳、鉀、鈣、鋰金屬和上述該些金屬 之合金。 29. 如申請專利範圍第22項所述之方法,其中該還 原劑包括鈉。 30. 如申請專利範圍第22項所述之方法,其中電解 該鈦金屬綿的條件,係在相同該容器內於一融溶鹽中,該 融至少包括重量百分比爲2%的已溶解鈦。 ® 31. 如申請專利範圍第22項所述之方法,其中該融 溶鹽係位在該容器中,該容器包括有一電解質藉以作爲在 相同該容器內電解該鈦金屬綿之用。 _ 32. 如申請專利範圍第22項所述之方法,更包括在 酸性下過濾沈積的鈦晶體,且用水洗滌以移除殘留的鹽。 33. 如申請專利範圍第22項所述之方法,更包括在 真空下乾燥該鈦晶體,或藉由使用熱氬氣沖走,或藉由冷 凍乾燥。 _ 34. 如申請專利範圍第22項所述之方法,其中在所 有的該還原劑已反應完後,額外的四氯化鈦加入該容器 內,用以在重量百分比2%至12%的溶解鈦中,氯化該鹽 和 TiCl2 / TiCl3。 35. 如申請專利範圍第22項所述之方法,其中在電 解前,抽真空該容器。 ~ 36. 如申請專利範圍第22項所述之方法,其中該容 45 538141 器抽真空至ίο微米以下。 37·如申請專利範圍第22項所述之方法,可用以生 成鈦晶體,該鈦晶體包括重量百分比爲99.99999%的鈦, 但不包括氣體和機械性陷住的鹽。 38. 如申請專利範圍第22項所述之方法,可用以生 成鈦晶體,該鈦晶體包括重量百分比爲99.9999%的鈦, 以及包括少於50ppm的氧,但不包括氣體與機械性陷住的 〇 ΤΤΤΪΛ 39. 如申請專利範圍第22項所述之方法,該鈦金屬 ® 綿包括全部濃度少於lppm的Be、Μη、Zr、Α1和V。 40. 如申請專利範圍第22項所述之方法,該鈦金屬 綿包括全部濃度少於lppm的Yb、Zn、Cr、Cd、B和Sn。 · 41. 如申請專利範圍第22項所述之方法,該鈦金屬 綿包括全部濃度少於lppm的Be、Μη、V、Zn、Cr、A1、 Yb、Cd、Zr、B 和 Sn。 42. 如申請專利範圍第22項所述之方法,更包括電 子束融溶該鈦晶體,以生成高純度的一鈦塊。 眷 43. 如申請專利範圍第22項所述之方法,更包括電 子束融溶該鈦晶體,以生成一鈦塊,該鈦塊包括重量百分 比爲99.99999%的鈦,但氣體除外。 44. 如申請專利範圍第22項所述之方法,更包括容 許電子束融溶該晶體,以生成一鈦塊,該鈦塊包括重量百 分比爲99.99999%的鈦,但氣體除外,以及包括少於lOOppm 的氧。 46 538141 45. 如申請專利範圍第44項所述之方法,其中該電 子束融溶係在壓力低於l〇_2t〇rr且融溶速率大於15 lbs/hr 下完成。 46. —種高純度鈦的製造方法,此高純度鈦本質上由 重量百分比爲99·999%的鈦和濃度少於50ppm的氧所組 成,但不包括氣體與機械性陷住的鹽,包括: 生成高純度之一鈦晶體,如申請專利範圍第22項所 述;以及 處理該鈦晶體和一碘,在一容器內於高溫減壓下,以 生成一碘化鈦,在一高溫下分解該碘化物,以生成氧含量 小於50ppm的一鈦晶體條,其中該鈦晶體與該碘在一溫度 範圍爲500°C〜800°C下反應,在溫度1150°C〜1450°C且壓 力高至1000微米下分解。 47. 如申請專利範圍第46項所述之方法,其中該反 應溫度爲70CTC〜775°C,分解溫度爲1300°C〜140(TC且壓 力爲100〜500微米。 48·如申請專利範圍第46項所述之方法,其中鈦晶 體條包括少於30ppm的氧。 49. 如申請專利範圍第46項所述之方法,更包括以 一*電子束融丨谷該欽晶體’以生成闻純度的一^欽塊。 50. 如申請專利範圍第48項所述之方法,其中該電 子束融溶在壓力低於l(T2torr且融溶速率大於I51bs/hr下 進行。 51·如申請專利範圍第22項所述之方法,其中控制 47 538141 該施加電k ’使陰極和_極的過電壓不大於。·5伏特。 _ 52·如串gf專利_第22項所述之方法,其中控制 該施加電^’使陰極和_極的過電壓不大於Q3伏特。 _ 53· __利_第22項所述之方法,其中控制 該施加电k,使陰極和陽極的過電壓不大於〇」伏特。 54· —種高純度鈦材料,包括: 至少锆或釩其中之S;以及 99·9999二t·%的欽,但氣體以及機械性陷入的鹽除外。鲁 55·-種^__料’包括鈦與全部濃度小於Ί ppm 的鈹、鎂、鉻_、鋁及f[,但氣難觀性陷人的鹽除外。 56·如靑專利範義第54或55麵述之高純度欽材 料’其中該純賴材料中全職與鉀之健係小於1() ppb ° 、57.如^專利範阖第54或55麵述之高純度鈦材 料’其中該问純度鈦材料中氧之含量不超過卯爪。 58·如^專利範晴第54或55麵述之高純度鈦材 · 料,其中該高純度欽材料中更包括全部濃度少於iPPb之 鈾與钍。 59.局純賴’包括至少銷麵其中之―;鈦;全部 濃度少於0.75 ppm的鈉、鉀、銘、鐵、鉻、鎳、銷、釩、 鎂、銅、鈾雛,但氣體除外;以及少於i〇〇 ppm的氧。 60· —種咼純度鈦材料,包括: 鈦; 48 538141 全部濃度少於o.l ppm的鈉、鉀、鋁、鐵、鉻、锆、 釩與鎳,但氣體與機械性陷入的鹽除外除外; 全部濃度少於1 ppb的鈾與钍; 全部濃度少於10 ppb的鈉與鉀;以及 小於或等於75 ppm的氧。 61. —種高純度鈦材料,包括: 99.999 wt·%的鈦,但氣體除外; 全部濃度少於0.75 ppm的鈉、鉀、鋁、鐵、鉻、鎳、 锆、釩、鎂、銅、鈾與钍; 全部濃度少於1 ppb的鈾與钍; 全部濃度少於10 ppb的鈉與鉀;以及 小於或等於75 ppm的氧。 62. 如申請專利範圍第54項所述之高純度鈦材料, 包括至少〇力1 ppm的至少锆與釩其中之一。 63. 如申請專利範圍第55項所述之高純度鈦材料, 包括至少〇·〇1 ppm的至少锆與釩其中之一。 64. 如申請專利範圍第56項所述之高純度鈦材料, 包括至少0.01 ppm的至少锆與釩其中之一。 65. 如申請專利範圍第57項所述之高純度鈦材料, 包括至少0.01 ppm的至少錯與釩其中之一。 66. 如申請專利範圍第58項所述之高純度鈦材料, 包括至少0.01 ppm的至少锆與釩其中之一。 67. 如申請專利範圍第59項所述之高純度鈦,包括 至少0.01 ppm的至少锆與釩其中之一。 49 538141 68. 如申請專利範圍第60項所述之高純度鈦材料, 包括至少0.01 ppm的至少銷與釩其中之一。 69. 如申請專利範圍第61項所述之高純度鈦材料, 包括至少〇_〇1 ppm的至少锆與釩其中之一。 70. 如申請專利範圍第54項所述之高純度鈦材料, 一濺鍍組合物係包括該高純度鈦材料。 71. 如申請專利範圍第70項所述之高純度鈦材料, 其中由該濺鍍組合物可製成一薄膜。 72. 如申請專利範圍第55項所述之高純度鈦材料, 一濺鍍組合物係包括該高純度鈦材料。 73. 如申請專利範圍第72項所述之高純度鈦材料, - 其中由該濺鍍組合物可製成一薄膜。 74. 如申請專利範圍第56項所述之高純度鈦材料, 一濺鍍組合物係包括該高純度鈦材料。 75. 如申請專利範圍第74項所述之高純度鈦材料, 其中由該濺鍍組合物可製成一薄膜。 馨 76. 如申請專利範圍第57項所述之高純度鈦材料, 一濺鍍組合物係包括該高純度鈦材料。 77. 如申請專利範圍第76項所述之高純度鈦材料, 其中由該濺鑛組合物可製成一薄膜。 78. 如申請專利範圍第58項所述之高純度鈦材料, 一濺鎪組合物係包括該高純度鈦材料。 ' 79. 如申請專利範圍第78項所述之高純度鈦材料, 50 538141 其中由該濺鍍組合物可製成一薄膜 80·如申請專利範圍第59項 一 鍍組合物係包括該高純度鈦。 &gt;、述之高純度鈦,〜濺 81·如申請專利範圍第80增 一 链*日公物ί ΉΤ制处之局純度 由該濺鑛組合物可製成一薄膜 鈦 ’其中 82·如申請專利範圍第60碑p _ 一濺鍍組合物係包括該高純度钛材料述之高純度鈦材料, 83.如申請專利範圍第82項所J、 一 其中由該髓組合物可賊-薄膜、。处高純麟材料,538141 A system controls multiple current densities during electrolysis. 7. A system for producing high-purity titanium, comprising the device as described in item 1 of the patent application scope and an electron beam melting furnace for purifying the titanium product produced by the device. 8. The device described in item 1 of the patent application scope further includes an electron beam melting furnace. 9. The device according to item 1 of the scope of patent application, which further includes an upper layer structure which can be arranged above the outer layer. The outer layer includes a gate valve, a conversion reel, a current distributor, a heat jacket holder, and a handling Holder * and a winch sleeve. 10. The device according to item 9 of the scope of patent application, wherein the upper structure is composed of titanium, stainless steel, molybdenum, nickel, a molybdenum-nickel alloy, and the above-mentioned alloy. 11. A device for manufacturing high-purity titanium metal, comprising: a tank container; a system filled with a plurality of reactants input into the tank container; an upper structure can be arranged above the tank container; a plurality of control pressure and temperature A system; an electrolysis system that can electrolyze multiple reaction products in the same environment in the tank container; and a getter system, before, during and after the removal of oxygen by electrolysis, via a heated getter substance, The gas generated in the tank container can be circulated. 12. The device according to item 11 of the scope of patent application, wherein the tank * container includes an outer layer containing an antioxidant; and an inner layer is located inside the outer layer 42 538141, and the inner layer has a reactant container made of metal. On the surface, this metal is less reactive than titanium in the chloride electromotive force sequence. 13. The device according to item 11 of the scope of patent application, wherein the superstructure includes a gate valve, a conversion reel, a current distributor, a heat jacket receiver, a handling receiver, and a winch jacket. 14. The device according to item 11 of the scope of patent application, wherein the superstructure is composed of titanium, stainless steel, molybdenum, nickel, a molybdenum-nickel alloy, or the above-mentioned alloy. 15. The device according to item 12 of the scope of patent application, wherein the material of the surface of the reaction container comprises molybdenum, nickel or a molybdenum-nickel alloy. 16. The device according to item 11 of the scope of patent application, further comprising a furnace adapted to receive the tank container. 17. The device according to item 11 of the scope of patent application, wherein the tank container is sealed during the reduction process. 18. The device according to item 11 of the scope of patent application, further comprising a system that controls a plurality of current densities during electrolysis. 19. A system for producing high-purity titanium, comprising a device as described in item 11 of the patent application scope and an electron beam melting furnace for purifying the titanium product produced by the device. 20. A system for producing high-purity titanium, comprising a device as described in item 11 of the scope of patent application and a thermal iodide decomposition system, wherein the titanium produced in the device reacts with iodine. 21. A system for producing high-purity titanium, including the device described in item 11 of the scope of patent application, a thermal iodide decomposition system, and an electronic 43 538141 beam melting furnace. 22. A method for producing high-purity titanium, comprising: reacting titanium tetrachloride and a reducing agent in a container, the reducing agent comprising an alkali metal and / or an alkaline earth metal to form a titanium metal wool and melt Dissolve alkali metal and / or alkaline earth metal salt; chlorinate the molten alkali metal and / or alkaline earth metal salt in the container; keep at least a part of the titanium metal cotton produced in the container as an anode; Under the same environment in the container, the titanium metal wool was electrolyzed to produce a titanium crystal; the titanium crystal in the container was recovered; and the salt was removed from the recovered titanium crystal. 23. The method as described in claim 22 of the scope of patent application, which further comprises adding titanium dichloride to the container to help chlorinate the salt. 24. The method according to item 22 of the scope of patent application, wherein the chlorination of the salt is completed by reacting the titanium tetrachloride with the titanium metal wool in the container. _ 25. The method according to item 24 of the scope of patent application, wherein the titanium metal wool comprises the titanium metal wool generated in the container. 26. The method according to item 22 of the scope of patent application, wherein the container has a reactant contact surface, which is essentially composed of a metal which is electrochemically compared according to the electromotive force sequence of the chloride Titanium is even less active. ^ 27. The method as described in item 26 of the scope of patent application, wherein the metal of the anti-44 538141 application contact surface includes molybdenum, nickel, or an alloy of molybdenum and nickel. 28. The method of claim 22, wherein the reducing agent comprises at least one of sodium, manganese, potassium, calcium, lithium metal and an alloy of these metals. 29. The method of claim 22, wherein the reducing agent comprises sodium. 30. The method according to item 22 of the scope of the patent application, wherein the conditions for electrolyzing the titanium metal wool are in a molten salt in the same container, and the melt includes at least 2% by weight of dissolved titanium. ® 31. The method as described in claim 22, wherein the molten salt is located in the container, and the container includes an electrolyte for electrolyzing the titanium wool in the same container. _ 32. The method as described in item 22 of the scope of patent application, further comprising filtering the deposited titanium crystals under acidic condition and washing with water to remove residual salts. 33. The method described in item 22 of the scope of patent application, further comprising drying the titanium crystal under vacuum, or by washing it away with hot argon, or by freeze-drying. _ 34. The method as described in item 22 of the scope of patent application, wherein after all the reducing agents have been reacted, additional titanium tetrachloride is added to the container to dissolve at 2% to 12% by weight. In titanium, this salt and TiCl2 / TiCl3 are chlorinated. 35. The method as described in claim 22, wherein the container is evacuated before electrolysis. ~ 36. The method as described in item 22 of the scope of patent application, wherein the container 45 538141 is evacuated to less than ίο microns. 37. The method described in item 22 of the scope of patent application, which can be used to generate titanium crystals, the titanium crystals comprising 99.99999% by weight of titanium, but excluding gas and mechanically trapped salts. 38. The method described in item 22 of the scope of patent application, which can be used to generate titanium crystals, the titanium crystals include 99.9999% by weight of titanium, and include less than 50 ppm oxygen, but excluding gas and mechanical trapping ΤΤΤΪΛ 39. The method described in item 22 of the scope of patent application, the titanium metal® cotton includes all of Be, Mn, Zr, A1, and V in a concentration of less than 1 ppm. 40. The method described in item 22 of the scope of the patent application, the titanium metal wool including all of Yb, Zn, Cr, Cd, B and Sn in a concentration of less than 1 ppm. 41. The method as described in item 22 of the scope of the patent application, the titanium metal wool including all concentrations of Be, Mn, V, Zn, Cr, A1, Yb, Cd, Zr, B and Sn. 42. The method as described in item 22 of the scope of patent application, further comprising melting the titanium crystal with an electron beam to form a titanium block of high purity. 43. The method described in item 22 of the scope of the patent application further includes melting the titanium crystals with an electron beam to form a titanium block, which includes 99.99999% by weight of titanium, except for gas. 44. The method described in item 22 of the scope of patent application, further comprising allowing the electron beam to melt the crystal to form a titanium block, the titanium block including 99.99999% by weight of titanium, except for gas, and including less than lOOppm of oxygen. 46 538141 45. The method as described in item 44 of the scope of patent application, wherein the electron beam melting is performed at a pressure of less than 10_2 torr and a melting rate of greater than 15 lbs / hr. 46. A method for manufacturing high-purity titanium, which is essentially composed of 99.999% titanium and oxygen with a concentration of less than 50 ppm, excluding gas and mechanically trapped salts, including : Forming a titanium crystal of high purity, as described in item 22 of the scope of patent application; and processing the titanium crystal and an iodine under a high temperature and reduced pressure in a container to generate a titanium iodide, which decomposes at a high temperature The iodide generates a titanium crystal bar with an oxygen content of less than 50 ppm, wherein the titanium crystal reacts with the iodine at a temperature range of 500 ° C ~ 800 ° C, at a temperature of 1150 ° C ~ 1450 ° C and a high pressure Decompose down to 1000 microns. 47. The method according to item 46 of the scope of patent application, wherein the reaction temperature is 70CTC ~ 775 ° C, and the decomposition temperature is 1300 ° C ~ 140 ° C and the pressure is 100 ~ 500 microns. 48. The method according to item 46, wherein the titanium crystal strip comprises less than 30 ppm of oxygen. 49. The method according to item 46 of the patent application scope further comprises melting the crystal with an electron beam to produce pure purity. 50. The method as described in item 48 of the scope of patent application, wherein the electron beam melting is performed at a pressure lower than 1 (T2torr and the melting rate is greater than I51bs / hr. 51. As in the scope of patent application The method according to item 22, wherein 47 538141 is controlled so that the applied voltage k 'makes the overvoltage of the cathode and the electrode not greater than 5 volts. _ 52. The method according to string gf patent _ item 22, wherein The applied voltage is such that the overvoltages of the cathode and the pole are not greater than Q3 volts. The method described in item 22, wherein the applied voltage k is controlled so that the overvoltages of the cathode and anode are not greater than 0. Volts. 54 ·-a high-purity titanium material, including: at least zirconium or vanadium S; and 99 · 9999 t ·% of Chin, except for gas and mechanically trapped salts. Lu 55 · -species ^ __ materials' include titanium and beryllium, magnesium, chromium, and aluminum with all concentrations less than Ί ppm And f [, except for the salt that is difficult to see. 56. The high-purity Chin material described in No. 54 or 55 of Rugao Patent Fanyi, where the full-time and potassium content of the pure material is less than 1 () ppb. ° 57. The high-purity titanium material described in ^ Patent Specification No. 54 or 55, wherein the content of oxygen in the purity titanium material does not exceed the claw. 58. Such as ^ Patent Specification No. 54 or 55 High-purity titanium materials, including uranium and plutonium with a concentration of less than iPPb in all high-purity materials. 59. Bureau of pure reliance includes at least one of the following:-titanium; sodium with a total concentration of less than 0.75 ppm , Potassium, Ming, iron, chromium, nickel, pins, vanadium, magnesium, copper, uranium, but not gas; and oxygen less than 100 ppm. 60 ·-a kind of thorium purity titanium materials, including: titanium; 48 538141 Sodium, potassium, aluminum, iron, chromium, zirconium, vanadium and nickel in all concentrations less than ol ppm, except for gases and mechanically trapped salts Uranium and plutonium with a total concentration of less than 1 ppb; sodium and potassium with a total concentration of less than 10 ppb; and oxygen of less than or equal to 75 ppm. 61.-a high-purity titanium material, including: 99.999 wt ·% titanium, but Except for gases; all sodium, potassium, aluminum, iron, chromium, nickel, zirconium, vanadium, magnesium, copper, uranium and plutonium in all concentrations less than 0.75 ppm; all uranium and plutonium in concentrations less than 1 ppb; all concentrations less than 10 ppb of sodium and potassium; and 75 ppm or less of oxygen. 62. The high-purity titanium material as described in item 54 of the scope of patent application, including at least one of zirconium and vanadium at least 0 ppm. 63. The high-purity titanium material as described in item 55 of the scope of the patent application, which includes at least one of zirconium and vanadium at least 0.001 ppm. 64. The high-purity titanium material as described in item 56 of the patent application scope, including at least 0.01 ppm of at least one of zirconium and vanadium. 65. The high-purity titanium material as described in item 57 of the patent application scope, including at least 0.01 ppm of at least one of vanadium and vanadium. 66. The high-purity titanium material as described in item 58 of the patent application scope, including at least 0.01 ppm of at least one of zirconium and vanadium. 67. The high-purity titanium as described in item 59 of the patent application scope, including at least 0.01 ppm of at least one of zirconium and vanadium. 49 538141 68. The high-purity titanium material as described in item 60 of the scope of patent application, including at least 0.01 ppm of at least one of vanadium and vanadium. 69. The high-purity titanium material as described in item 61 of the scope of patent application, which includes at least one of zirconium and vanadium at least 0-0.01 ppm. 70. The high-purity titanium material described in item 54 of the scope of patent application, a sputtering composition system comprising the high-purity titanium material. 71. The high-purity titanium material according to item 70 of the application, wherein a thin film can be made from the sputtering composition. 72. The high-purity titanium material described in item 55 of the scope of patent application, a sputtering composition system comprising the high-purity titanium material. 73. The high-purity titanium material according to item 72 of the scope of patent application,-wherein a thin film can be made from the sputtering composition. 74. The high-purity titanium material described in item 56 of the scope of patent application, a sputtering composition system comprising the high-purity titanium material. 75. The high-purity titanium material according to item 74 of the application, wherein a thin film can be made from the sputtering composition. Xin 76. According to the high-purity titanium material described in item 57 of the scope of patent application, a sputtering composition system includes the high-purity titanium material. 77. The high-purity titanium material as described in item 76 of the scope of patent application, wherein a thin film can be made from the splatter composition. 78. According to the high-purity titanium material described in item 58 of the scope of the patent application, a sputtering composition comprises the high-purity titanium material. '79. The high-purity titanium material described in the scope of the patent application No. 78, 50 538141 Wherein the sputtering composition can be made into a thin film 80. If the scope of the patent application is No. 59, the plating composition system includes the high purity titanium. &gt; The high-purity titanium mentioned, ~ splash 81. If the scope of the patent application is 80th, an additional chain * Japanese public goods, the local purity of the ΉΤ system can be made from the sputtering composition into a thin film of titanium 'of which 82. The scope of the patent No. 60 tablet _ A sputtering composition system includes the high-purity titanium material described in the high-purity titanium material. . High purity Lin materials, 84·如申請專利範圍第6ι -灘鍍組合_包_高純度^料述之誠度欽材料, 85·如申請專利範圍第84 一 其中由該濺魏合物可製成—薄膜、。純度欽衬料, 86. 如申請專利範圍第62 一 -擺鍍組合物脑括_随_料心⑽賴材料, .料 87. 如申請專利範圍第86一 其中由該濺鑛組合物可製成—薄膜。⑽筒純度欽材84. If the scope of application for patent 6m-beach plating combination _ package _ high purity ^ materials described in Cheng Duqin materials, 85. If the scope of application for patent 84th one, which can be made from the sputtering compound-thin film. Purity lining material, 86. For example, the scope of application for the patent No. 62 I-pendulum plating composition, including materials, materials, and materials 87. For the scope of application for the patent No. 86, which can be prepared from the splatter composition Into-thin film. Purity 88. -種高純度鈦材料,包括至 鈦以及總含量少於0.1 ppm的銷、、Ί、、’ -、之〜、 但氣體與麵性陷細賺外Y w ^ H與鎳, 申請專利範圍第88項所述之高 其中更包括總含量少於1卯b的鈾⑼與钍(Th)。材料, =_請群m_ 88 述之高純度 其中包括有濃度不大於75 ppm的氧。 付枓, 51 538141 91·如申請專利範圍第88項所述之高純度鈦材料, 其中鈉與鉀之總含量少於10 ppb。 蔞毚 0.75 92. —種高純度鈦,包括至少錯與釩其中之一、 百分比爲99.999%的鈦但氣體除外、以及總含量少於 銘、鐵、絡、鎳、錯、釩、鎂、銅 、鈾與 ppm的鈉、鉀 钍。 93. 如申請專利範圍第μ項所述之高純度鈦材料, 包括至少0.01 ppm的至少锆與釩其中之—。 ' 94. 如申請專利範圍第89項所述之高純度鈦材 包括至少〇·〇1 ppm的至少锆與釩其中之。 、’ 95. 如申請專利麵第90 _述之高純度駄 包括至少0.01 ppm的至少锆與釩其中之一。 斗’ 96. 如申請賴麵第91 _述之高純度欽 包括至少〇·〇1 ppm的至少锆與釩其中之—。 97. 如申請專利範醇92,岐高純錄 至少0.01 ppm的至少锆與釩其中之〜。 匕括 98·如申請專利範圍第88 3:旨印、、十―一/ 一 -、斤述之局純度欽树 一濺鍍組合物係包括該高純度鈦材料。 料, 99·如申請專利範圍第98項— -、所迆之高純度鈦材 其中由該濺鍍組合物可製成一薄膜。 付枓, 100.如申請專利範圍第89項所 _ 一濺鍍組合物係包括該高純度鈦树料^之问純度銳材料, 101·如申請專利範圍第100項所 _ 其中由該濺鍍組合物可製成一薄腠、。4之闻純度銳树料, 52 3057twf4.doc/008 102. 如申請專利範圍第9〇項 -濺鍍組合_包_高純麟Μ述之高純賴材料, 1〇3·如申請專利範圍第1〇2項 一 其中由該Μ組合物可製成-_述之高純麟材料, 104·如申請專利範圍第91項 _ -濺鍍組雜係包醒高純錢彳物岐高純賴材料, 105, 如申請專利範圍第l〇4_Er::、、 雕继細4物ιπτ制比—激J、斤述之高純度欽材 其中由該濺鍍組合物可製成一薄膜。 106.如申請專利範圍第92 鍍組合物係包括該高純度鈦。 -、所述之局純度欽, 料 猶 107如申請專利範圍第106 由該濺鍍組合物可製成一薄膜。 -、戶斤述之局純度飲88.-A variety of high-purity titanium materials, including to titanium and pins with a total content of less than 0.1 ppm, Ί, '', ~~, but the gas and surface characteristics are fine to earn Y w ^ H and nickel, apply for a patent The high in the range of item 88 includes uranium and thorium (Th) with a total content of less than 1 卯 b. Materials, = _Pleasegroup m_ 88 Describes high purity which includes oxygen at a concentration of not more than 75 ppm. Fu Yi, 51 538141 91. The high-purity titanium material as described in the 88th scope of the patent application, wherein the total content of sodium and potassium is less than 10 ppb.蒌 毚 0.75 92. — High-purity titanium, including at least one of vanadium and vanadium, with a percentage of 99.999% except gas, and a total content of less than Ming, iron, iron, nickel, vanadium, magnesium, copper , Uranium and ppm sodium and potassium thorium. 93. The high-purity titanium material as described in item μ of the patent application scope, including at least 0.01 ppm of at least one of zirconium and vanadium. '94. The high-purity titanium material as described in the 89th scope of the patent application includes at least 0.001 ppm of at least one of zirconium and vanadium. ′ 95. The high purity plutonium as described in Patent Application No. 90 _ includes at least 0.01 ppm of at least one of zirconium and vanadium. Bucket '96. The high purity as described in Application No. 91 _ includes at least 0.001 ppm of at least one of zirconium and vanadium. 97. If applying for the patent Fanol 92, Qi High Purity records at least 0.01 ppm of at least one of zirconium and vanadium ~. 98. If the scope of the patent application is 88: 3, the purpose is to print ten, one-one, one, and one-hundred-thousand-thousands of local purity Chinshu. A sputtering composition system includes the high-purity titanium material. Material 99. For example, the high-purity titanium material described in item 98 of the patent application range, wherein a thin film can be made from the sputtering composition. Fu Ying, 100. As in the scope of the patent application No. 89 _ a sputtering composition is a high-purity titanium material ^, the material is sharp, 101 · as in the scope of the patent application 100 _ where the sputtering The composition can be made into a thin tincture. Purity sharp tree material of 4 wen, 52 3057twf4.doc / 008 102. For example, the scope of application for patent No. 90-sputtering combination_packet_high purity Lin M described the high-purity materials, 103. For the scope of patent application No. 1 Item 02, where the M composition can be made of the high-purity Lin material described above, 104. If the scope of application for the patent is 91_, the sputter plating group includes high-purity money, Wuqi high-purity material, 105 For example, if the scope of the patent application is No. 104_Er :: ,,, and the ratio of the fine-grained material to the fine-grained material is ππ, the high-purity metal material described in J. Jin, where a thin film can be made from the sputtering composition. 106. The plating composition of claim 92 includes the high-purity titanium. -The above-mentioned local purity is as good as 107. The thin film can be made from the sputtering composition as described in the patent application No. 106. -, Purity Drink 3057twf4.doc/008 533057twf4.doc / 008 53
TW87106693A 1997-04-30 1998-04-30 Titanium crystal and titanium, and method and apparatus for prodding the same TW538141B (en)

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