TW535230B - Method of forming multi-layered micro-machine structure on IC chip surface - Google Patents

Method of forming multi-layered micro-machine structure on IC chip surface Download PDF

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TW535230B
TW535230B TW91113574A TW91113574A TW535230B TW 535230 B TW535230 B TW 535230B TW 91113574 A TW91113574 A TW 91113574A TW 91113574 A TW91113574 A TW 91113574A TW 535230 B TW535230 B TW 535230B
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layer
forming
item
metal
scope
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TW91113574A
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Jeng-San Jou
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Lightuning Tech Inc
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Abstract

The present invention provides a kind of method for forming multi-layered micro-machine structure on IC chip surface. In the invention, the press fit process of dry-film, laser processing and nickel plating process are conducted repeatedly by deep carving of excimer laser together with the precise electroplating method. At last, the entire dry-films are removed to form a multi-layered metal micro-machine structure and complete the integrated micro-mechanical device. The manufacturing method of the present invention is simple such that it is capable of greatly decreasing the chip area for lowering the production cost and can be used in any integrated circuit process.

Description

535230 五、發明說明(1) 發明領域: 本發明係有關一種微機械結構的製作方法,特別是關 於一種形成多層金屬微機械結構於丨c晶片表面的方法,以 應用於感測元、射頻元件或光學元件等之微機電元件中。 發明背景: 隨著科技的蓬勃進步,產品不斷往輕薄短小發展,因 而衍生出次世代產業需求之微系統技術。將微機電元件 (Micromechnical Devices)與相關的感測或控制電路整 合於單晶片,可以大幅降低成本,提高競爭力。 一般而言’微系統技術中整合積體電路光刻技術、電 化學電_技術及咼分子成型技術之深刻電鑄模造L I g a (Lithography 'Electroplating 'Micromoiding)技 術’是批量生產微機電元件的最佳方法之一,其係將鎳金 屬結構製作於一 I C晶片表面以完成上述目標。因為l I 技 術為低溫製程,不會影響已完成之1C,且此種製造方法不 僅簡單,而且可以大幅縮小晶片面積以利降低成本,同 時’錄合金具有低應力(提供大尺寸的元件例如掃描鏡面 )、高強度及高密度(提供較大的質量例如慣性感測)之 優點,可以比美矽材料作為各種微機電元件使用。請參見535230 V. Description of the invention (1) Field of the invention: The present invention relates to a method for manufacturing a micromechanical structure, in particular to a method for forming a multilayer metal micromechanical structure on the surface of a wafer, for application to sensing elements and radio frequency components. Or micro-electro-mechanical components such as optical components. Background of the Invention: With the rapid development of science and technology, products continue to develop light, thin and short, resulting in micro-system technology that is required by the next generation of industry. Integrating Micromechnical Devices and related sensing or control circuits on a single chip can greatly reduce costs and increase competitiveness. In general, 'integrated integrated circuit lithography, electrochemical technology, and molecular molding technology in microsystem technology's deep electroforming mold LI ga (Lithography' Electroplating 'Micromoiding)' is the most popular method for mass-producing MEMS components One of the best methods is to fabricate a nickel metal structure on the surface of an IC chip to achieve the above objectives. Because the l I technology is a low-temperature process, it will not affect the completed 1C, and this manufacturing method is not only simple, but also can significantly reduce the wafer area to reduce costs, and at the same time, the alloy has low stress (providing large-scale components such as scanning Mirror surface), high strength and high density (providing greater quality such as inertial sensing), can be used as a variety of micro-electro-mechanical components than silicon materials. See

專利編號 W0 89/0 1 632、US 5,5 95,940 及 US 6,290,8^8M 等專利引證案。 ’ 其中,在W0 89/ 0 1 632專利案中所揭露的方法係以χ_ 光作為L I G Α的曝光源,來製作次微米精度之微結構,但因Patent citations such as W0 89/0 1 632, US 5,5 95,940 and US 6,290,8 ^ 8M. ’Among them, the method disclosed in the WO 89/0 1 632 patent case uses χ_ light as the exposure source of L I G Α to produce a microstructure with sub-micron accuracy, but because

第4頁 535230 五、發明說明(2) 成本高:程序複雜、時程長’並無法普遍取得[光 小/’、,且所需的X —光光罩製作困難且價格昂貴。 = 及US 6,29G,8圖專利案中所揭露 法係採用uv曝光及電漿蝕刻以完成深刻動作,立 釭績相當複雜,且電漿蝕刻並無法達到高的深寬比二 特別的應用,例如較大的感測電容。 、 更盔上述之方法皆不易提供多層金屬結構的製造, 更…法i曰加設計及使用的彈性。因此,本發明 成多層微機械社構於I C曰Μ矣品λα + 種开y 之缺失。槭、、、口構 曰曰片表面的方法,以有效克服上述 發明目的 本發 於I c晶片 術於I C晶 晶化微機 本發 於I C晶片 性且可大 任何積體 為達 成有金屬 一感光乾 以形成階 與概述 明之主 表面的 片表面 電元件 明之另 表面的 幅縮小 電路製 到上述 焊塾及 膜;接 梯狀結 要目的 方法, ’以完 或系統 一目的 方法, 晶片面 程。 之目的 保護該 著利用 構及露 係在提供 其係整合 成具有高 〇 係在提供 其係具有 積及降低 ,本發明 基板之保 準分子雷 出該金屬 一種形成多層微機械結構 準分子雷射加工及電鑄技 /罙寬比與高精度特性之單 種形成多層微機械結構 衣長簡單、可增加製程彈 成本之優點,並可適用於 ,在一半導體基板表面形 4層’並在基板表面形成 :t除部份該感光乾膜, 干塾之穿孔區域;再於該 535230 五、發明說明(3) 感光乾膜及金屬焊墊正表面沈積一電鑄起始層;進行電鑄 製程,使該穿孔區域内成長出金屬結構;最後去除該感光 乾膜,即可得到一單層微機械結構。 本發明之另一實施態樣,係重複的進行乾膜壓合、雷 射加工與電鑄製程,直至製作出預定金屬結構層數後,再 去除所有的感光乾膜,即可形成一多層金屬微機械結構。Page 4 535230 V. Description of the invention (2) High cost: The procedure is complicated and the time duration is long. It is not generally available [light small / ', and the required X-ray mask is difficult to make and expensive. = And US 6,29G, 8 The method disclosed in the patent case of Figure 8 uses UV exposure and plasma etching to complete deep actions. The performance is quite complicated, and plasma etching cannot achieve a high aspect ratio. Special applications , Such as larger sensing capacitance. The above methods are not easy to provide the manufacture of multi-layer metal structures, and more ... the method of design and use flexibility. Therefore, the multi-layered micro-mechanical system of the present invention is constructed in the absence of IC, M, and λα + species. Maple ,, and mouth structure method to effectively overcome the above-mentioned object of the invention. This chip is used in IC chip technology. It is used in IC crystallization. The microcomputer is used in IC chip. It can be large enough to achieve metal and photosensitivity. To form the step and outline the main surface of the chip surface of the electrical components on the other surface of the circuit to reduce the width of the circuit and the above-mentioned welding pad and film; to connect the ladder-shaped junction to the purpose method, 'to complete or system-purpose method, wafer surface area. The purpose of protecting the system is to provide a system that integrates the system with a high level. The system provides the system with a volume and a decrease. The excimer laser of the substrate of the present invention out of the metal forms a multilayer micromechanical structure excimer laser. Processing and electroforming technology / single aspect ratio and high precision characteristics form a multilayer micro-mechanical structure. The clothing is simple in length and can increase the cost of the process bomb. It can be applied to 4 layers on a semiconductor substrate surface and the substrate. Surface formation: t remove part of the photosensitive dry film and dry the perforated area; and then deposit the electroforming starting layer on the positive surface of the photosensitive dry film and metal pad on the 535230 V. Description of the invention (3); A metal structure is grown in the perforated area; finally, the photosensitive dry film is removed to obtain a single-layer micromechanical structure. In another aspect of the present invention, the dry film lamination, laser processing, and electroforming processes are repeatedly performed until a predetermined number of metal structure layers are made, and then all the photosensitive dry films are removed to form a multilayer. Metal micromechanical structure.

底下藉由具體實施例配合所附的圖式詳加說明,當更 容易瞭解本發明之目的、技術内容、特點及其所達成之功 效。 圖號說明: 12 保護層 16 鎳金屬結構 20 感光乾膜 2 0 4 穿孔區域 2 4 鎳金屬結構 2 6 2 階梯狀結構 28 電鑄起始層 32 雙層金屬微機械結構 10 半導體基板 14 金屬焊墊 18 鎳金屬結構 2 0 2 階梯狀結構 22 電鑄起始層 26 感光乾膜 2 6 4 穿孔區域 30 鎳金屬結構In the following, detailed descriptions will be made with specific embodiments and accompanying drawings to make it easier to understand the purpose, technical content, features and functions of the present invention. Description of drawing number: 12 protective layer 16 nickel metal structure 20 photosensitive dry film 2 0 4 perforated area 2 4 nickel metal structure 2 6 2 stepped structure 28 electroforming starting layer 32 double-layer metal micromechanical structure 10 semiconductor substrate 14 metal welding Pad 18 Nickel metal structure 2 0 2 Stepped structure 22 Electroforming starting layer 26 Photosensitive dry film 2 6 4 Perforated area 30 Nickel metal structure

詳細說明: 第一圖係為本發明形成一金屬微機械結構於I C晶片表 面的示意圖,如圖所示,一個包含感測及控制積體電路在 内的半導體基板1 0,通常為矽基板,也可以是其他非矽基 板’基板1 0袁表面裸露者為保護層1 2及金屬焊塾1 4 ’金屬Detailed description: The first figure is a schematic diagram of forming a metal micromechanical structure on the surface of an IC wafer according to the present invention. As shown in the figure, a semiconductor substrate 10 including a sensing and control integrated circuit is usually a silicon substrate. It can also be other non-silicon substrates. 'Substrate 1 0 The exposed surface is the protective layer 12 and the metal welding pad 1 4' metal.

第6頁 535230 五、發明說明(4) Ή1 面決定於積體電路製程,通常為銘金屬。不 固定# F、孟屬結構1 6及1 8係藉由裸露的金屬焊墊1 4提供 垃者品而形成於該基板上,同時也藉由金屬焊墊1 4連 下T基板1 〇的積體電路。 本毛月之製造方法的優點為適用於任何的積體 二微:且;Ϊ屬結構完全懸浮於晶片上方,懸浮高度大‘ 、’、 〜μ的電路可以完全製作於金屬結構下方,故可 人2大的節’凡成後的晶片面積,降低成本。同時鎳及鎳 3金材料可達到低應力,可以製作大面積的微機電元件, 例如光學兀件之微掃描鏡面;金屬的高強度及延展性可以 免除石夕脆性材料的斷裂問題,而且鎳的密度大於8克/立方 公分),遠大於石夕的2.3g/cm3,再加上UGA技術提 供的南深寬比(> 丨〇 ),本發明作為慣性感測元,例如加 速規及陀螺儀時,可以提供大的質量塊及大的起始電容 值’增加莖敏度及提高系統的q值,而且本發明實施例所 提供的夕平面鎳金屬結構,更可以鎳金屬為支撐結構,在 鎳表面形成一層鋼或金,作為射頻(Radi〇 Frequency ) 元件,例如u電感(miCroinduct〇r)、射頻開關(π SWltchL 或相位陣列天線(Phase array antenna)等。 現就~上述之結構來說明本發明之製造方法,請參閱第 一 A圖至第一I圖,為本發明之較佳實施例在製作多層微機 械結構於I C晶片表面之各步驟構造剖視圖;如圖所示,本 發明主要製造方法係包括有下列步驟: 請麥閱第二A圖所示,首先,提供一包含感測及控制Page 6 535230 V. Description of the invention (4) Ή1 surface is determined by the integrated circuit manufacturing process, which is usually inscribed metal.不定 # F, Mon structures 16 and 18 are formed on the substrate by providing bare metal pads 14 and at the same time, T substrate 1 0 is also connected by metal pads 14 Integrated circuit. The advantage of this manufacturing method is that it is suitable for any integrated product: and; the metal structure is completely suspended above the wafer, and the circuit with a large floating height ',', ~ μ can be completely made under the metal structure, so it can be People's 2 large festivals, where the wafer area after completion, reduces costs. At the same time, nickel and nickel 3 gold materials can achieve low stress, which can be used to produce large-area micro-electromechanical components, such as micro-scanning mirrors of optical elements; the high strength and ductility of the metal can avoid the fracture problem of brittle materials, and the nickel The density is greater than 8 grams / cubic centimeter), which is much larger than Shixi's 2.3g / cm3. In addition to the south aspect ratio (> 丨) provided by UGA technology, the present invention is used as an inertial sensor, such as an accelerometer and a gyroscope. It can provide a large mass and a large initial capacitance value to increase the sensitivity of the stem and the q value of the system. In addition, the evening plane nickel metal structure provided by the embodiment of the present invention can also use nickel metal as a support structure. A layer of steel or gold is formed on the surface of nickel as radio frequency (Radi〇Frequency) elements, such as u inductor (miCroinductor), radio frequency switch (π SWltchL or phase array antenna), etc. Now ~ the above structure comes Illustrating the manufacturing method of the present invention, please refer to FIGS. 1A to 1I, which are cross-sectional structural views of steps in fabricating a multilayer micromechanical structure on the surface of an IC wafer according to a preferred embodiment of the present invention. As shown, the main method of the present invention includes the following system steps: A second reading wheat figure, first, there is provided a sensing and control comprising

第7頁 535230 五、發明說明(5) 積體電路在内的半導體基板1〇,在半導體基板1〇表 ^ 金屬焊墊1 4及保護該基板1 〇之保護層1 2,金屬焊^ ^ 5又有 料決定於積體電路製程’通常為結金屬;緊“藉由4 = 印刷電路板的製造方式’在半導體基板丨0表面形成_ 乾膜20(例如Hitachi Chemical Co. HN650 系列產品)έ,以 覆蓋該金屬焊墊14及保護層12 ;該感光乾膜2〇係係3σ由二二 子材料以熱壓法形成於該半導體基板1〇上所構成者, 要傳統的光阻塗佈,快速且簡易,再者熱壓方式提供了二 平坦化過程,對後續的微結構製造平整度要求容易了而 感光乾膜20之厚度係介於20〜5。微米’使形成的微結構: 基板間之間距大,微結構不會因液體表面張力黏附於晶片、 上(在最後的乾膜餘刻過程),且微結構與基板間的^ 電容效應亦、λ大減丨(此舉對感測元及射頻元件設計相卷 重要)。 曰 第二I圖所示,利用準分子雷射(波長248-)加工 去::伤之感ί*乾膜2〇 ’以形成階梯狀結構2〇2及露出該 Ϊ f : Τ田4 f f孔區域2〇4 ’且該階梯狀結構202係在加工 過:::用杈:之能量或較少之時間所形成者。其*,準 感光乾膜2〇直接去除:m勺方式,可以將高分子 (包含光阻塗佈、軟烤::”阻的曝光顯影繁複步驟 時上述之二階的感光;膜=影、定影及硬烤)’同 兩道光罩製程,而利用本m:-般的曝光製程需要 置兩種圖形,加=法僅需要在同-片光罩佈 了私動先罩即可(光罩移動及工件移動 535230 五、發明說明(6) 功能皆是準分子雷射加工機的基本功能),而且加工後的 感光乾膜20可以達到相當高的深寬比(大於1 〇 ),即為穿 孔區域2 0 4的深寬比,以充分滿足微結構的設計與應用, 請參見附件資料Bruce C· S. Chou (周正三)等人Study of PMMA on Microstructuring as a KrF excimer laser LIGA mater i a 1 o 請麥閱第二C圖所示,利用物理氣相沈積法形成一電 鑄起始層(Seed Layer)22於該半導體基板1〇最上層表 面’使其有部份形成於裸露的金屬焊墊1 4正表面上,部份 形,於階梯狀結構2 0 2正表面上及部份形成於感光乾膜2〇 之最表面。該電鑄起始層22之材料為鎳/鈦或者鎳/鉻二層 金屬,,中,鈦及鉻係作為附著層(adhesion layer )。 接著,進行電鑄製程,將基板丨〇置於以氨基碏 :的電鑄溶液Η過金屬焊塾14給予電流,使該穿= /内開始成長出鎳金屬結構2 4,如第二ρ圖所示,等到成 3錄金屬接觸到階梯狀結構2〇2的電鑄起始層22 ' 寺平面繼續成長,宣到定羞的古存& , 、 俜作Α料、 罝到疋義的问度為止,此鎳金屬結構24 係1乍為懸洋微機械結構。 即可成。上述製造過程之後,若將感光乾膜20去除, 的更:別—::金屬微機械結構。然1^,本發明製造方法 、、ί : 可以重複上述第二A圖至第二D圖所示之 “Γ以藉此形成多層鎳金屬微機械結構。此種多層 困械結構對於習知利用X—光或uv_光曝光而言相當 、V因於要同時完成包含第二次光阻塗佈、軟烤、曝Page 7 535230 V. Description of the invention (5) Semiconductor substrate 10 including integrated circuits, the semiconductor substrate 10 is shown on the table ^ metal pads 14 and the protective layer 12 protecting the substrate 10, metal welding ^ ^ 5 It is determined that the integrated circuit manufacturing process is usually a junction metal; tightly "by 4 = printed circuit board manufacturing method" is formed on the surface of the semiconductor substrate 丨 0 _ dry film 20 (such as Hitachi Chemical Co. HN650 series products) In order to cover the metal pad 14 and the protective layer 12; the photosensitive dry film 20 series 3σ is formed by the two-dimensional material on the semiconductor substrate 10 by hot pressing method, and requires the traditional photoresist coating to quickly It is simple and convenient. Furthermore, the hot pressing method provides two planarization processes, and the subsequent requirements for the flatness of the microstructure manufacturing are easy. The thickness of the photosensitive dry film 20 is between 20 and 5. Micrometers make the microstructure formed: between the substrates. The distance is large, the microstructure will not adhere to the wafer due to the liquid surface tension (in the final dry film process), and the capacitance effect between the microstructure and the substrate is also greatly reduced, λ (this will affect the sensing And RF component design are important As shown in the second figure I, excimer laser (wavelength 248-) is used to process :: the feeling of wounding * dry film 20 ′ to form a stepped structure 202 and expose the Ϊ f: Τ 田 4 ff 孔 区 204 ′ and the step-like structure 202 is formed after processing :: using the energy of the branch: or less time. Its *, the quasi-sensitive dry film 20 is directly removed: m spoon method, The polymer (including photoresist coating, soft baking :: "the above-mentioned second-stage photosensitivity during the complicated steps of exposure and development of the resist; film = shadow, fixing, and hard baking) can be used in the same two photomask processes, and this m: -The general exposure process requires two graphics. The addition method only needs to be covered with a private mask on the same mask (the mask is moved and the workpiece is moved 535230. 5. Description of the invention (6) Functions are all excimers The basic function of a laser processing machine), and the processed dry film 20 can achieve a relatively high aspect ratio (greater than 10), that is, the aspect ratio of the perforated area 2 0 4 to fully meet the design of the microstructure And application, please refer to the attached document Bruce C · S. Chou (周正 三) et al. Study of PMMA on Microstruct uring as a KrF excimer laser LIGA mater ia 1 o Please refer to Figure 2C, using physical vapor deposition method to form an electroforming starting layer (Seed Layer) 22 on the top surface of the semiconductor substrate 10 Part of it is formed on the front surface of the bare metal pad 14, partly formed on the front surface of the stepped structure 202, and partly formed on the outermost surface of the photosensitive dry film 20. The material of the electroforming starting layer 22 is a nickel / titanium or nickel / chromium two-layer metal. Among them, titanium, and chromium are used as an adhesion layer. Next, an electroforming process is performed, and the substrate is placed in an electroforming solution with an amino group: metal is passed through the electrode 14 to give a current, so that the nickel metal structure 2 4 begins to grow in the inner hole, as shown in the second figure. As shown, wait until the three-layer metal contacts the stepped structure 002 of the electroformed starting layer 22 '. The plane of the temple continues to grow, and the ancient remains of Dingxian & As far as the problem is concerned, this nickel metal structure 24 series 1 is a suspended ocean micromechanical structure. Can be done. After the above-mentioned manufacturing process, if the photosensitive dry film 20 is removed, it is even more: no — :: metal micromechanical structure. However, according to the manufacturing method of the present invention, "Γ" shown in the second diagrams A to D can be repeated to form a multilayer nickel metal micromechanical structure. This multilayer mechanical structure is used for conventional use. X-ray or uv_ light exposure is equivalent, V is due to the completion of the second photoresist coating, soft baking, exposure

第9頁 535230 五、發明說明(7) 光、顯影、定影及硬烤,而不景{響前一次留下的光阻結構 是不容易的’故習知技術僅強調於單一層結構的製作。 本發明在完成第一層鎳金屬結構24之後,可繼續於其 上製作第一層金屬結構。請先參閱第二E圖所示,再以熱 壓法形成另一感光乾膜26於感光乾膜20及鎳金屬結構24之 表面上’製作方法與前述形成感光乾膜2〇之方式相同,於 此不再贅述。 接部份之 域2 6 4 然 基板正 金屬結 部份形 而 溶液中 開始成 到成長 則再等 構30亦 /體0 著請參見第 圖所示,利用準分子雷射加 - ▼ Μ ,ν- 一舌除 感光乾膜26,以形成階梯狀結構262,以及穿孔區 1其係裸露出部份鎳金屬結構24。 後以物,氣相沈積法形成一電鑄起始層28於半導體 =,如第二G圖所示,使其有部份形成於裸露的 構24上,部份形成於階梯狀結構262 ^ 成於感光乾膜26之最表面。 表面上及 後將該半導體基板丨〇置於以氨基 ,透過金屬焊墊14給予電流,使該f的电~ 且山斤 ^发牙孔區域2R4内 長出弟二層的鎳金屬結構30 ’如第二' 的錄令屬垃d 因所不’寺 】„觸到階梯狀結構262的 I Φ持_成長,直到定義的高度 作為懸浮微機械姓槿,廿盥兮禮八 此鎳金屬結 卞…構亚與该鎳金屬結構24結合成Page 9 535230 V. Description of the invention (7) Light, development, fixing and hard roasting, but not the scene {the photoresist structure left over from the previous time is not easy '' so the conventional technology only emphasizes the production of a single layer structure . After the first layer of nickel metal structure 24 is completed in the present invention, the first layer of metal structure can be fabricated thereon. Please refer to the second figure E, and then form another photosensitive dry film 26 on the surface of the photosensitive dry film 20 and the nickel metal structure 24 by hot pressing. The manufacturing method is the same as the method of forming the photosensitive dry film 20 above. I will not repeat them here. The area of the connection part 2 6 4 Although the positive metal junction of the substrate is shaped and the solution begins to grow to growth, it is isomorphic 30 / body 0. Please refer to the figure below, using excimer laser plus-▼ Μ, ν- The photosensitive dry film 26 is removed to form a stepped structure 262, and the perforated region 1 exposes a part of the nickel metal structure 24. Then, an electroforming starting layer 28 is formed on the semiconductor by a vapor deposition method, as shown in the second G diagram, which is partially formed on the exposed structure 24 and partially formed on the stepped structure 262 ^ It is formed on the outermost surface of the photosensitive dry film 26. On the surface and after, the semiconductor substrate was placed on the amino group, and a current was passed through the metal pad 14 so that the electric power of f was grown, and a two-layer nickel metal structure 30 ′ was grown in the tooth hole area 2R4. For example, the second record of the order belongs to the temple. The I Φ that touches the stepped structure 262 grows up to a defined height as a floating micromechanical surname hibiscus. This nickel metal knot卞 ... Combined with the nickel metal structure 24

去除所有的感光乾膜20 取後 〆Τ圖赂- ^ 颂兀祀朕ζ υ、z b,即可π w丄铱 1 口所不之譬& 丨J传到如弟 间所; 9 屬彳政機械結構3 2,此钍椹你 # 圖所不之結構。另冰 々 %構係同於第一 “苒3外,多層(大於等於" 孟屬結構的製After removing all the photosensitive dry film 20, take a picture of 〆Τ-^ ung Wu 朕 ζ υ, zb, you can π w 丄 iridium 1 and other examples & 丨 J to Rudi Suo; 9 belong to政 机械 结构 3 2 , This 钍 椹 你 # Figure is not the structure. In addition, the structure of 々% is the same as that of the first ", 3, with multiple layers (greater than or equal to "

第10頁 535230 五、發明說明(8) 造步驟為重 製作出預定 即可藉此形 因此 雷射加工及 與高精度特 膜的熱壓合 習知之缺失 簡單且可大 之優點,這 以上所 點’其目的 容並據以實 凡依本發明 蓋在本發明 複的進行乾膜壓合、雷射加工與鎳電鑄,直至 微機械結構層數後,再去除所有的感光乾膜, 成~多層錄金屬微機械結構。 ,本發明製造方法之最大精神在於整合準分子 電缉技術於I C晶片表面,以完成具有高深寬比 性之單晶化微機電元件或系統,且藉由感光乾 技術及準分子雷射的直接去除不但可有效克服 ϋ可增加製程彈性、降低成本,並具有製程 二=1、阳片面積及適用於任何積體電路製程等 、二都疋習知技術所無法達到的。 述之貫施例僅传為今、日日 在使孰羽+係為5兄明本發明之技術思想及特 仕便热白此項技蓺之人 施,者不K之人士旎夠瞭解本發明之内 田 月匕以之限定本發明少直4丨丨々々闲 所揭示之耖妯私A ^月之專利靶圍,即大 予月神所作之均等變 之專利範圍内。 J寺义化或修飾,仍應涵Page 10 535230 V. Description of the invention (8) The manufacturing steps are designed to be re-produced so that it can be shaped. Therefore, the lack of laser processing and hot pressing with high-precision special films is simple and large. This is the above point. 'Its purpose is based on the fact that according to the present invention, the dry film lamination, laser processing, and nickel electroforming are covered in the present invention, and after the number of layers of the micromechanical structure is removed, all the photosensitive dry films are removed to form ~ Multi-layer recording metal micromechanical structure. The greatest spirit of the manufacturing method of the present invention is to integrate the excimer electro-detection technology on the surface of the IC wafer to complete a single-crystallized micro-electro-mechanical device or system with high aspect ratio. Removal can not only effectively overcome, increase process flexibility, reduce costs, but also has a process two = 1, the area of the positive film, and is applicable to any integrated circuit manufacturing process, which cannot be achieved by conventional technologies. The consistent examples described are only passed on today and every day to make 孰 羽 + the 5 brothers to understand the technical ideas of the present invention and the special technology will be used by people who do n’t know enough about this technology. The invention of Uchida Tsukuba limited the invention's patented target range, which is disclosed in the present invention, which is within the scope of the patent made by the moon god. J Temple is justified or modified, still should be covered

535230 圖式簡單說明 圖式說明: 第一圖為本發明形成一金屬微機械結構於I c晶片表面的示 意圖。 第二A圖至第二I圖分別為本發明製作多層微機械結構於I C 晶片表面的各步驟結構剖視圖。535230 Brief description of the drawings: The first drawing is a schematic view of forming a metal micromechanical structure on the surface of an IC wafer according to the present invention. Figures 2A to 2I are cross-sectional views of the structure of each step of manufacturing the multilayer micromechanical structure on the surface of the IC wafer according to the present invention.

第12頁Page 12

Claims (1)

535230 六、申請專利範圍 下列步種驟开'成多層微機械結構於ic晶片表面的方法,包括 A.長:供~^半導歸其j 路,在該半導辦=土反’其内已設有感測及控制積體電 保護層;、土反表面形成有金屬焊墊及保護該基板之 B ·在s亥半導辦其士 焊墊及該保護‘ T 、面形成-感光乾膜,以覆蓋該金屬 結=,膜,以形成階梯狀 D·沈積一带妒i 1又牙孔£域, 面; 以起始層於該感光乾膜及金屬坪塾之正表 二=構使該穿孔區域内係成長出金屬結構, .在及感光乾膜及金屬結構表面再 祕Ε,以形成另一懸浮微機械結構;獲上述步驟β至步 G·去除该感光乾膜,即可得到一 2、如申請專利範圍第μ所述之形成;械結構。 曰曰片表面的方法,其中在該步驟F中係s 钱械結構於I C 至步驟Ε,直至製作出預定微機械結構:=續重複該步驟Β 驟G。 層數後,再進行步 、如申請專利範圍第i項所述之形成多 曰a 片表面的方法,其中該多層微機械結I :桟械結構於I C 元、射頻元件及光學元件等之微機電^ 係應用於感測 i、如申請專利範圍第3項所述之形成$二二: 層彳政機械結構於I c 535230 六、申請專利範圍 晶片表面的方法,其中該感測元係為微慣^ 3、如申請專利範圍第3項所述之形成屛或測元。 ,片表面的方法,其中該射頻元件係為二=機械結構於iC 或相位陣列天線。 ’、為欲電感、射頻開關 、如申請專利範圍第3項所述之形 曰曰片表面的方法,立 ,夕層微機械結構於1C V如申請專利範圍第掃描鏡面。 =面的方法,其中該感光 機械結構於K f、形成於該帛導體基板上所構成者。、^切料以熱壓 如申請專利範圍第i項所述之形 十曰if;面的方法’其中該感光乾膜之厚;械結構於ic 木之間。 從係介於20〜5 0微 '如申請專利範圍裳 晶片表面的方法,Α中,^ =形成多層微機械結構於1C 者錄/鉻二層金屬.構中该曰電=起始層之材質係為鎳/鈦或 10、 如申,專利:二構,且該鈦及鉻係作為附著層。 τ Γ 專利靶圍第1項所沭之报丄夕昆/ 晶片表面的方法 1 y 夕a 士放機械結構於 成者。 其中该金屬結構係由鎳或鎳合金所構 11、 如申請專利範圍笛 Ic晶片表面的方法^項/ 形成多層微機械結構於 鋼或金。 /、中在该金屬結構表面更可形成一層 12、 一種形成多 下列步驟·· P 、戒結構於1 c晶片表面的方法,包括 一土反,其内已設有感測及控制積體電535230 VI. The scope of the patent application The following steps suddenly open the method of forming a multi-layered micromechanical structure on the surface of an IC chip, including A. Long: Supply ~ ^ Semiconductor return to its j path, where the semiconductor office = soil counter ' A sensing and control integrated electric protection layer has been provided; a metal pad is formed on the reverse surface of the soil and the substrate B is protected. The semiconductor pad is provided with a semiconductor pad and the protection 'T, surface formation-photosensitive stem Film to cover the metal junction =, film to form a stepped D · deposition area with jealous holes and surfaces; a starting layer on the photosensitive dry film and the metal surface A metal structure grows in the perforated area, and is then secreted on the surface of the photosensitive dry film and the metal structure to form another suspended micromechanical structure. Obtaining the above steps β to G · removing the photosensitive dry film, you can 12. Form as described in the scope of application for patent; mechanical structure. In the method of sheet surface, in this step F, the coin structure is from I C to step E, until a predetermined micromechanical structure is produced: = continue to repeat this step B step G. After the number of layers, the method of forming a multi-layer surface as described in item i of the patent application scope is performed step by step, wherein the multilayer micromechanical junction I: the mechanical structure is in the IC element, radio frequency element and optical element, etc. Electromechanical ^ is applied to sensing i, as described in item 3 of the scope of the patent application, forming a $ 22: layer structure of the mechanical structure on I c 535230 6. The method of applying a patent to the surface of a wafer, wherein the sensing element is Micro inertia ^ 3. The formation of a unit or unit as described in item 3 of the scope of patent application. , Chip surface method, where the RF element is two = mechanical structure in iC or phased array antenna. ′, For inductors, radio frequency switches, as described in the third aspect of the scope of the patent application, said method of forming a film surface, and the micro-mechanical structure at 1C V, as in the scope of the patent scope of the application. = Surface method, in which the photosensitive mechanical structure is formed on K f and formed on the plutonium conductor substrate. The cutting material is hot-pressed as described in item i of the scope of the patent application. The method of "if; surface", wherein the thickness of the photosensitive dry film; the mechanical structure is between the ic wood. From the system of 20 ~ 50 micron's, such as the method of patent application, the surface of the wafer, in A, ^ = forming a multilayer micromechanical structure in 1C / chrome two-layer metal. In the structure, the electric = the starting layer The material is nickel / titanium or 10, as applied, patent: two structure, and the titanium and chromium are used as the adhesion layer. τ Γ The method reported by the patented target area No. 1 Xi Kun / Method of wafer surface 1 y Xi Shi puts the mechanical structure in place. The metal structure is composed of nickel or a nickel alloy. 11. The method for forming a surface of an IC wafer as described in the patent application, item ^ / forming a multilayer micromechanical structure on steel or gold. / 、 A layer can be formed on the surface of the metal structure 12. One method of forming multiple steps is as follows: P, a method of forming a structure on the surface of a 1 c wafer, including a soil reactor, which has been provided with sensing and control integrated power 第14頁 A·提供一半導辦装_^ 535230 六、申請專利範圍 ---— 路在/半^體基板表面形成有金屬焊墊及保護該基板之 保護層; B ·在忒半導體基板表面形成一感光乾膜,以覆莫嗲 焊墊及該保護層; 農以、’镯 :構除部份該感光乾膜,以形成階梯狀 、、、口構及‘出该金屬焊墊之穿孔區域; D·沈積一電鑄起始層於該感光乾膜及 面; 喝杆墊之正表 Ε·進行電鑄製程,使該穿孔區域内係 作為懸浮微機械結構;以及 乂長出金屬結構, F.去除該感光乾膜,即可得到一單 13、如申考4 丨— „ 又域械結槿。 戈Τ明專利乾圍第J 2項所述之形成 偁 1 C晶片表面的方法,其中在該步驟E:之後/仏钱械結構於 該步驟B至步驟E,直至製作出預定微機械可繼續重複 再進行步驟F去除該感光乾膜,進而形'、^層數之後, 構。 夕層微機械結 1 4、如申請專利範圍第1 2項所述之形成多屌^ 1C晶片表面的方法,其中該微機械結構二微機械結構於 射頻元件及光學元件等之微機電元件中j、%用於感測元、 1 5、如申請專利範圍第1 4項所述之形成多 I C晶片表面的方法,其中該感測元係為:微機械結構於 1 6、如申請專利範圍第1 4項所述之形成多=性感測元。 1C晶片表面的方法,其中該射頻元件係二广微機械結構於 關或相位陣列天線。 、微電感、射頻開Page 14A · Providing half guide installation _ ^ 535230 VI. Application scope of patents --- On the surface of the / semi-substrate substrate, a metal pad and a protective layer protecting the substrate are formed; B · On the surface of the semiconductor substrate A photosensitive dry film is formed to cover the solder pad and the protective layer; the farmer ’s and bracelets: remove a part of the photosensitive dry film to form a stepped shape, an opening structure, and a perforation of the metal pad. Area; D · deposit an electroforming starting layer on the photosensitive dry film and surface; perform the electroforming process on the surface of the stem pad to make the perforated area be a suspended micromechanical structure; and grow a metal structure F. Remove the photosensitive dry film, you can get a single 13, as described in application 4 丨 — „and the field of hibiscus. The method of forming the surface of 偁 1 C wafer as described in the item 2 of the patent of the dry circle of Ge Tming patent. Wherein, after the step E: after the money machine structure is performed in the steps B to E, a predetermined micromechanical device can be manufactured and can be repeated. Then step F is performed to remove the photosensitive dry film, and then the number of layers is formed. 。Xi layer micromechanical junction 14 、 As in the patent application scope No. 12 A method for forming a multi-layered 1C wafer surface, wherein the micromechanical structure and the micromechanical structure are used in a micro-electromechanical element such as a radio frequency element and an optical element, and j is used as a sensing element. The method for forming the surface of a multi-IC wafer as described in item 4, wherein the sensing element is: the micro-mechanical structure is formed in 16 as described in item 14 of the scope of patent application = sexy element. Method, wherein the radio frequency element is a two-way micro-mechanical structure on-off or phase array antenna. 第15頁 535230 六、申請專利範圍 17、 如申請 Ϊ C晶片表面 18、 如申請 I C晶片表面 壓法形成於 19、 如申請 1 C晶片表面 微米之間。 2 0、如申請 I C晶片表面 或者鎳/鉻_ 21 、如申請 Ϊ C晶片表面 成者。 22 、如申請 I C晶片表面 銅或金。 ----- 專利範圍第1 4項所述之形成多層n 的方法,其中該光學元件係為;構於 專利範目第12項所述之形《多層微 的方法,其中該感光乾膜係由高分子構於 該半導體基板上所構成者。 ’、、以熱 專利範圍第1 2項所述之形成多層微椟 的方法,其中該感光乾膜之厚度構二 專利範圍第12項所述之形成多層微機 的方法,其中該電鑄起始層之材質係為;構敍於 -層金屬結構,且該鈦及鉻係作為附著層。 專利範圍第1 2項所述之形成多層微機W 的方法,其中該金屬結構係由鎳或又於 乂螺合金所構 專利範圍第12項所述之形成多層微機 的方法,其中在該金屬結構表面更 、:於 尺了形成一層Page 15 535230 VI. Application scope of patents 17. If applying for ΪC wafer surface 18, if applying for IC wafer surface Compression method is formed between 19 and if applying for 1 C wafer surface micron. 2 0. If applying for IC surface or Ni / Cr _ 21, for applying ΪC wafer surface. 22. If the surface of the IC chip is applied for copper or gold. ----- The method for forming a multilayer n as described in item 14 of the patent scope, wherein the optical element is: a method of "multi-layer micro method" in the form described in item 12 of the patent specification, wherein the photosensitive dry film It consists of a polymer structured on the semiconductor substrate. '. The method for forming a multilayer micro-capsule according to item 12 of the thermal patent range, wherein the thickness of the photosensitive dry film is the method for forming a multilayer micro-computer as described in item 12 of the patent range, wherein the electroforming is initiated The material of the layer is: structured in a -layer metal structure, and the titanium and chromium are used as an adhesion layer. The method for forming a multi-layer microcomputer W according to item 12 of the patent scope, wherein the metal structure is a method for forming a multi-layer microcomputer according to item 12 of a patent scope consisting of nickel or a snail alloy, wherein the metal structure is The surface is even more: a layer is formed on the ruler 第16頁Page 16
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7207661B2 (en) 2003-07-17 2007-04-24 Ligh Tuning Tech. Inc. Ink-jet print head with a chamber sidewall heating mechanism and a method for fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7207661B2 (en) 2003-07-17 2007-04-24 Ligh Tuning Tech. Inc. Ink-jet print head with a chamber sidewall heating mechanism and a method for fabricating the same

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