TW533589B - Manufacturing method of color filter - Google Patents

Abstract

The present invention provides a manufacturing method of color filter, wherein a blue photoresist is passivated on the sensing region, and form a blue pixel after one exposure and developing process. The exposed pattern ratio is 25%. Then passivate a red photoresist, form a red pixel after one exposure and developing process, the exposed pattern ratio is 25%, and the neighboring portion of the red pixel and blue pixel overlap. Finally, passivate green photoresist, proceed one exposure and developing process, perform etch back process till the surfaces of the blue pixel and red pixel are exposed, so that the blue, red and green pixels have a uniform thickness.

Description

533589

[Field of the Invention] The present invention relates to a method for manufacturing a color filter (color fi Iter), and more particularly to a four-day element configuration type color filter for a solid state imaging device (s0 丨 id state imaging device). Manufacturing method of tablets. [Known technology] Solid-state imaging devices can be roughly divided into two types: complementary metal-oxide-semiconductor image sensors (CMOS image sensors) and charge-coupled devices (CCDs). Color filters are solid-state imaging devices. Necessary material for colorization. Generally, a solid-state imaging device forms a light sensor in a sensing area in a semiconductor silicon substrate, and a color filter is located above the light sensor. After the incident light passes through the color filter, it is filtered into three primary colors, red (R), green (G), and blue (B), and then absorbed and sensed by the corresponding light sensor. The manufacturing method of a conventional solid-state imaging device is shown below. FIG. 1 is a cross-sectional view showing a conventional solid-state imaging device. First, a photo sensor 1 02 is formed in a semiconductor silicon substrate 100, and then, a transparent and planarized oxide layer is covered over the photo sensor 100, and then the planarized oxide layer is formed. Color filters are formed on 1 0 4! i 0. Continue to form another transparent and planarized oxide layer 1 12 above the color filter J 0, and then form microlenses 12 20 on the planarized oxide layer 11 2. In terms of manufacturing the color filter 110, firstly, a layer of blue photoresist is covered, and after a process of exposure and development, a blue pixel B is formed, and its pattern is shown in FIG. 2A. Cover with a layer of green photoresist and make two exposures

0503-7089TWF i TSMC2001-0938 »Amy.ptd Page 4 533589 V. Description of the invention (2) = The mask pattern used in the exposure process is as shown in Figure 2B: The light used in the sub-exposure process The cover pattern is shown in Figure 2C, each:

: 2: ^ The ratio is 25%, and then the development process is performed to form a green day pigment GT: a layer of red photoresist. After one exposure and development process, i, ,,, and chroman R, the pattern is as shown in Figure 2D. Show. /to make

Ik's focus on Θ improves the trend of image sensitivity (s e n s 丨 t 丨 v 丨 t y) and 蚩 " ^ 〇111 to 〇11), so the size of daylight is also getting smaller and smaller. 1 Once the size of the element is getting smaller and smaller, when manufacturing pixels of different colors,

Due to the inaccuracy, the pixels of different colors of the color filter 11 are caused to be blurred or incompletely shaded, which leads to color distortion. Furthermore, in the exposure system, because the holes are prone to the interference of dry shots, the analysis of the block == is better than the resolution of the holes, so the preparation of the green pixels needs to be performed twice, increasing the manufacturing cost. In addition to the exposure, 'the coating yields of the monitor photoresist, the green photoresist, and the red photoresist may be different, so that the surface of the blue pixel B, the green pixel G, and the red 2 day R is uneven, As a result, different colors of daylight have different photo-transmission rates, and a flat layer needs to be formed on top of them to facilitate the formation of microlenses 12. [Objective and Summary of the Invention] In view of this, the present invention provides a method for manufacturing a color filter, which can avoid overlapping or incomplete shielding between pixels of different colors of the color filter due to inaccuracy of private manufacturing. The problem occurred. In addition, another object of the present invention is to provide a method which can simplify the manufacturing process of a color filter.

533589 V. Description of the invention (3) Furthermore, another object of the present invention is to provide a method for making a color filter with a flat surface and a uniform thickness. The present invention provides a method for manufacturing a color filter, and the method is briefly described as follows. A dielectric layer is formed on the substrate, a first color photoresist is coated on the dielectric layer, and a first exposure process and a first development process are performed to convert the first color photoresist to a first color pixel. Then, a second color photoresist is coated on the dielectric layer, and a second exposure process and a second development process are performed to convert the second color photoresist into a second color daylight, wherein the first color daylight and the first At the junction of the two-color pheromones, the second-color pheromones will overlap the first color pheromones. A third color photoresist is coated on the dielectric layer, and a third exposure process and a third development process are performed, so that the third color photoresist covers the entire sensing area. After that, an etch-back process is performed to change the third color photoresist to the third color daylight, and to make the first, second, and third color daylights have a flat surface. The invention also provides a method for manufacturing a solid-state imaging device, and the method is briefly described as follows. A photo sensor is formed in a sensing region in the substrate, and a dielectric layer is formed on the photo sensor. Then, a first color photoresist is coated on the dielectric layer, and a first exposure process and a first development process are performed, so that the first color photoresist is converted into the first color daylight, and corresponds to the light of the first part. The sensor, wherein the pattern ratio of the first color daylight is 25%. Continue coating the second color photoresist on the dielectric layer, and perform the second exposure process and the second development process, so that the second color photoresist is converted to the second color daylight, and corresponds to the light perception of the second part. In the measuring device, the pattern ratio of the second color lutein is 25%, and at the boundary between the first color lutein and the second color lutein, the second color lutein will overlap the first color lutein. After that, a third color light is applied on the dielectric layer.

0503-7089TWF; TSMC2001-0938; Amy.ptd page 6 533589 V. Description of the invention (4) The resist is subjected to the third exposure process and the third development process so that the third color photoresist covers the entire sensing area. After that, an etch-back process is performed to convert the third color photoresist to the third color daylight, which corresponds to the light sensor of the third part, and to make the first, second, and third color daylight have flat On the surface, the proportion of the pattern of the third colored daylight is 50%. Finally, microlenses are formed on the first, second and third color pixel surfaces. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: [Simplified description of the drawings] FIG. A cross-sectional view of a conventional solid-state imaging device. Figures 2A to 2D show patterns of pixels of different colors for manufacturing a color filter of a conventional solid-state imaging device. Figure 3 is a cross-sectional view of a conventional solid-state imaging device when the color filter manufacturing process is inaccurate. Figures 4A to 4E show the manufacturing process of the solid-state imaging device of the present invention. Figures 5 to 7 show patterns of pixels of different colors for manufacturing color filters of conventional solid-state imaging devices. [Symbol description] Substrate ~ 100, 3 0; Sensing area ~ 3 50; Peripheral circuit area ~ 3 6 0; Light sensor ~ 10 2, 3 0 2; Oxide layer ~ 104, 112; Dielectric layer ~ 304; color filter ~ 110, 310; micro lens ~ 120, 3 2 0;

0503-7089TWF; TSMC2001-0938; Amy.ptd Page 7 533589 V. Description of the invention (5) [Example] Straight: J makes the color filter have a flat surface φ, and avoids color loss! '心 本The invention provides a method for manufacturing a color filter, so that the k-th color pixels of the second thickness: red daylight and green daylight have uniform and consistent brightness. The present invention will be described in detail in conjunction with FIGS. 4A to 4e. Referring to FIG. 4A, the edge electricity can be divided into a sensing area of 350 and a circle, for example: _ forming a light sensor 3 0 2 3 in the sensing area 3 50 of the substrate 3 0. 2 j / square bearing diode. After that, in the process of interconnecting, the photo sensor is oxidized. Disk-layer transparent and flattened dielectric layer 304, whose material is, for example, η2, which is 302: in the peripheral circuit area of 360, then a light sensor is formed to form each soil into some control elements. Electrical connection is made on the process charge data of the internal connection # 'Processing the two produced by the sensing area 350 and converting them into images' However, this part is not relevant to the present invention, and is connected to the optical film. The blue-green-red color filter patterns to FIG. 7 are formed on the frankened dielectric layer 304, and the patterns of the photoresist masks of different colors of the color filters are respectively shown. "Songba ’s Nine One Shall refer to Figure 4B and Figure 5 'to form a pattern with a ratio of 25%! ~ For example, blue daylight B. The formation method is based on the dielectric layer 3 04 = a layer of color photoresist, such as a blue photoresist, ... a kind of negative photoresist containing blue pigment, and then an exposure process and a development process are performed. The exposed blocks are hardened to make this blue light a lot of lumpy blue daylight B. ...

533589 V. Description of the invention (6) Please refer to Figure 6 and Figure 6, and then form another daylight element with a small proportion of the pattern, such as red daylight element R. The formation method is to coat a layer of red photoresist on the layer 304 and blue daylight b. This red photoresistance = the negative photoresist of the red material, the thickness formed will be thicker than the previous blue photoresist. The blocks of the one exposure process and the one development process are hardened so that this red photoresist is turned into many massive red books. ^ The light inspection is that the red day R and the blue pixel cross red, " It will partially overlap on the blue day element B to avoid misalignment within the manufacturing process, which will cause the color to lose its color. Note that 'red pixels R can also be formed first. , And then form a blue saki ΠΪρ with reference to the 4D figure and ㈣, and then form the pattern proportion side = prime: coating one, green photoresistance / which is-species containing: the thickness of y, h, y, y, and y will be greater than 4 The red photoresist is thick. Then, an exposure process and a development process are performed to make the sensing area 350 0. Then, the color recording is first covered and then the etch-back process is performed until the blue daylight 6 is exposed. And red dipeptide R = to form blue dipeptide b, red dipeptide /, / right < denier as shown in FIG. 4E G, # in the case of blue daylight B, red daylight 1 ^ and green daylight G, overlapped 'and there is no gap formed. Because in the etchback II ;:' Monitor color photoresistance, 1 color photoresistance and green light The resistance has the same rate of money engraving, so it can make the blue dipeptide B and red dipeptide M.

533589 V. Description of the invention (7) The green pixel G has a uniform surface. The formed blue dioxin b, red dioxin R, and green pixel G constitute a color filter 3 1 0, and the color filter 3 1 0 has a uniform thickness and a flat surface. Since the formed color filter 3 1 0 has a flat surface, the microlens 3 2 0 can be directly formed on the color filter 3 1 0. As shown in FIG. 4E, no further color filter is needed. A transparent and planarized dielectric layer is formed above the light sheet 31. Each microlens 3 2 0 corresponds to a light sensor 3 2 0. [Features and Effects of the Invention] In summary, the present invention has at least the following advantages: 1. As the present invention develops a red photoresist, a blue photoresist, and a green photoresist after exposure and development, respectively, and then goes through a worm-etching process Therefore, the problem of overlapping or incomplete shielding between pixels of different colors of the color filter caused by the inaccurate potential range can be avoided, and they have the same thickness. And 2. Since the green photoresist of the present invention only needs to undergo an exposure process, and a mask pattern is also required, the process of color filter can be simplified. ^ 3. Since the color filter of the present invention has a flat surface and a uniform body, microlenses can be directly formed on the color filter. Compared with the conventional method, the formation of a dielectric layer and its flatness can be saved.化 ^ 程 ,,,,. Although the present invention has been disclosed as above with a preferred embodiment, it does not limit the present invention. Anyone skilled in this art can make changes and decorations without departing from the spirit and scope of the present invention. ^ &Amp; of the invention shall be subject to the definition in the appended claims. ’, Moving around

0503-7089TWF; TSMC2001-0938; Amy.ptd page 10

Claims (1)

533589 VI. Application for patent scope 1. A survey area 'the party is based on the medium process and a first color on the boundary of the medium process and a second color day pixel; on the medium process and A first sensing area is formed by coating a three-developing process on the electrical layer and performing a back-etching process on the surface of the three-color zotan. 2 · As applied method, wherein 3. As applied method, wherein the blue day color is a third color day shirt color filter manufacturing method, which is applicable to a basic method including: a Λ on the bottom Forming a dielectric layer; coating a first color photoresist on the layer and performing a first exposure-development process to convert the first color photoresist into a plurality of daylight; coating a first layer on the electrical layer — — ^ 罘 a cedar color photoresist, enter a second exposure and two development process ”to turn the second color photoresist into a plurality of pixels in the first color daylight element and the second color Some second color pixels will be overlapped with the first color and third color photoresists, and a third exposure will be performed so that the third color photoresist covers the whole, and the third color photoresist is turned into a plurality of The first, second, and third color celestial elements have the color filter dielectric layer described in item 1 of the patent application, and the material is oxygen cutting. The first color photoresist of the color filter described in item 1 of the Ming patent scope is a blue photoresist, and the first color photon is a red photoresist, and the second The color red day light element, the third color photoresist is a green light resistance, and the element is a green day light element. 533589 6. Application for patent scope 4 · The manufacturing method of the color filter described in item 3 of the scope of application for patent, wherein the red photoresistor is a negative photoresistor, the blue photoresistor is a negative photoresistor, and the green photoresistor is Negative photoresist. 5. The method for manufacturing a color filter according to item 1 of the scope of patent application, wherein the first color photoresist is a red photoresist, the first color daylight is a red daylight, and the second color light The photoresist is a blue photoresist, the second color photon is a blue photon, the third color photon is a green photoresist, and the third color photon is a green photon. 6. The method for manufacturing a color filter as described in item 5 of the scope of patent application, wherein the red photoresistor is a negative photoresistor, the blue photoresistor is a negative photoresistor, and the green photoresistor is a negative photoresistor. 7. A method for manufacturing a solid-state imaging device, the method comprising: providing a substrate, the substrate including a sensing area; forming a plurality of light sensors in the substrate in the sensing area; and performing the light sensing A dielectric layer is formed on the device; a first color photoresist is coated on the dielectric layer, and a first exposure process and a first development process are performed to turn the first color photoresist into a plurality of first photoresists. A color daylight, and corresponding to the light sensor of the first part, the pattern ratio of the first color daylight is 25%; a second color photoresist is coated on the dielectric layer, and a A second exposure process and a second development process, so that the second color photoresist is converted into a plurality of second color daylights, and corresponds to the light sensor of the second part, the second color daylights The pattern ratio of is 2 5%, and at the junction of the first and second color celestial elements, the second and second color celestial elements will overlap 0503-7089TWF; TSMC2001-0938; Amy.ptd page 12, the scope of application for patents on these color coating process and electrical layer coating clams; the second development process progresses, the first money back process Three-color photoresist, performing,, ~, so that the second color photoresist covers the entire third exposure color day-by-day process, so that the > color photoresist is converted into a plurality of first, second, and corresponding The third part is a light sensor, and makes these ~ and third color daylight elements have an unflattering surface, wherein the pattern ratio of the ΛΛ ^^ / r HI elements is: 1. The \ th microlenses. =: Please refer to item 7 in the scope of the patent. The material of the dielectric layer is silicon oxide. = Manufacturing of the solid-state imaging device described in item 7 of the scope of the applied patent = In the first color photoresistor is a _ basket color photoresistor, the first color daylight color book: color daylight, the second color photon is a The red photoresist is a red photon, the third photoresist is a green photoresist, and the second color photon is a green pixel. Fang 1 〇 Manufacture of the solid-state imaging device according to item Θ of the patent application / wherein the red photoresistor is a negative photoresistor, the blue photoresistor is a negative photoresistor, and the green photoresistor is a negative photoresistor. 11 · The method for manufacturing a solid-state imaging device according to item 7 of the scope of the patent application, wherein the first color photoresist is a red photoresist, the first color pixel is a red daylight element, and the second color photon is Is a blue photoresist, the second color daylight is a blue pixel, and the third color photoresist is a green photoresist. The method (method is to form a solid-state imaging device corresponding to the surface of the first color dentin). III ill 1 11 ~ 11 (__s 1! Ill 0503-7089TWF; TSMC2001-0938; Amy.ptd page 13 533589 6. Application scope of patent The third color daylight is a green daylight. 1 2 · If the scope of patent application The method for manufacturing a solid-state imaging device according to item 11, wherein the red photoresistor is a negative photoresistor, the blue photoresistor is a negative photoresistor, and the green photoresistor is a negative photoresistor. 0503-7089TWF; TSMC2001-0938; Amy.ptd page 14