TW533577B - Circuit structure for connecting bonding pad and ESD protection circuit - Google Patents

Abstract

A circuit structure for connecting a bonding pad with an electrostatic discharge protection circuit. The circuit structure includes a plurality of conductive layers, a first plurality of first plugs, a first conductive line, a plurality of second conductive lines and a plurality of second plugs. The conductive layers are parallel layers each at a different height level between the bonding pad and a substrate. The first plugs connect the bonding pad electrically with a neighboring conductive layer as well as each neighboring conductive layer. The first conductive line connects electrically with the conductive layer nearest the substrate and the drain terminal of an ESD protection circuit. The second conductive lines are parallel lines each at a different height level between the first conductive line and the bonding pad. Each second conductive line connects electrically with the conductive layer at a corresponding height level. The second plugs connect electrically with the first conductive line and the second conductive line adjacent to the first conductive line as well as each neighboring second conductive line.

Description

533577 Case No. 91110706 Repair "V. Description of the invention (1)-The present invention relates to a circuit structure that connects a pad and an electrostatic discharge circuit (Electrostatic Discharge protection, protection and protection) circuit, and in particular A circuit related to a bonding pad and an electrostatic discharge protection circuit forms a multilayer circuit.

UulUple paths) structure, and through the multilayer path ^ ^ six, the component's electrostatic discharge protection capabilities. "The knife 'is to increase the electrostatic discharge from the static electricity on the non-conducting surface to the damage of the semiconductor and other circuits in 1C: the phenomenon of movement', which will cause the human body to be removed. In the case of high relative humidity (RH), for example, There are several hundred to several thousand volts of static electric dust on the carpet, and under =, about two bands can be detected just before:: Statics with about -10,000 volts or more are detected. Cases with low degree of equipment Squatter for testing integrated circuits. The packaged body is exposed to 3 days! Voltage. When the above-mentioned charged body (the human being generates about several hundred to be able to discharge to the wafer, this static machine or instrument) Therefore, I said: i ::;: circuit damage or = instantaneous power control of electricity Electrostatic discharge =: discharge damage wafer ϊ :. The method using hard H Ρϋί t was born accordingly. @ 的 体 体 电路 ， Especially prevent static discharge, take the common feather stand a

ClrcUlt) and each—that is, the white-disc approach that I saw a little in the inside is the electrostatic discharge protection :: 俾: rr wafer;: Bu; 1 «^% ^ t Λδ;% ^ ° ^ (〇n'chip) A cross-sectional view of the semiconductor connection, and the ^ to the electrostatic discharge perspective view 'and β electrostatic discharge protection f @ The drawing is shown as a conventional. ^ In the figure 2 the insulating layer is omitted; the circuit connection between the ^

----- ° In the first picture, the cage 86I ^ wfl.ptc 533577-Case No. 9H10706_ " Broken > Month 丨 / Revision V. Description of the invention ^ ^ ~ "-2 The 〇〇 system is formed on the uppermost layer of the semiconductor element, and the ESD protection circuit 118 is provided in the substrate 50. The connection from the solder pad 100 to the bottom 2 is the plug base 102, the conductor layer 104, the plug 106, the conductor layer 108, and the plug 110 'body layer 112'. The conductor layer 112 is shown in Fig. 1 Has an extension wire 1 1 2 a, and this extension wire 1 1 2 a extends to the electrostatic discharge protection circuit 丨! Above the drain 116 of 8 and through a contact window 114, the extension lead 1 1 2a is electrically connected to the drain 1 1 6 disposed on the substrate 50. Furthermore, there is an insulating layer 130 between the solder pad 100 and the substrate 50, and the insulating layer 130 covers the above-mentioned circuit structure. In the above first and second figures, when an electrostatic discharge phenomenon occurs, the static electricity flows from the bonding pad 100 through the upper circuit to the electrostatic discharge protection circuit 1 丨 8, that is, through the bonding pad 100 and the plug 102. , Conductor layer 104, plug 106, conductor layer 1 08, plug 1 1 10, conductor layer 1 12 and extension wire 丨 12a flow to the drain 116 of the ESD protection circuit 118, and the interior is protected by the ESD protection circuit 118 The circuit is not damaged by electrostatic discharge. However, in the structure of FIG. 1 and FIG. 2, the static electricity flows to the electrostatic discharge protection circuit 1 1 8 through the path of a single layer of metal (that is, the extended wire 1 1 2 a). When it is too large, the extension lead 1 1 2 a may be burned by an excessive current, and the electrostatic discharge protection circuit 1 1 8 may fail. The conventional method for avoiding the burnout of the extension wire 1 12a is to widen the line width of the extension wire 12a or increase the thickness w of the extension wire 1 12a. However, if the thickness W of the extension wire 1 1 2 a is limited, the extension wire 1 1 2 a can only be solved by adding a wire. In today's processes where semiconductor devices are becoming smaller and more integrated, the increase in line width means process margin.

8618twfl.ptc Page 7 _ Case No. 91110706 The description of the invention (3) (window) is not reduced. Therefore, the purpose of the present invention is to protect the circuit structure and strength of the circuit. Another object of the present invention is the circuit structure and capability of a side circuit. The invention provides a connection structure. The circuit structure includes a plug, a first wire, and a plurality of 'layers' which connect the pads and adjacent conductor layers in parallel at different heights. The first lead wire f is electrically connected to the electrostatic radiation in parallel, and the first lead wires are electrically connected to different corrections, which facilitates the integration of the components. I propose a connection between the pad and the static electricity that can increase the component's electrostatic discharge. I propose a connection between the pad and the static enough to reduce the wire width of the wire, in order to increase the pad and the: The conductors electrically connecting the heights of the electrical protection wires and the bonding pads connect the electrostatic discharge conductor layer of the first lead and the adjacent first lead, the plurality of pads and the base layer, and the body layer. As mentioned above, the second conductive wire adjacent to the second conductive wire is a multi-layer circuit composed of the second conductive wire of the present invention, which flows through each path. The thickness of the conductive wire also has more advantages in circuit design. The electrical protection 'multiple layers are electrically connected between the second bottom and the second. Each second and third line is formed in the circuit structure. Since the current can be reduced by the current, the wire can be shaped to meet the needs of the process. Increased variability and freedom. A multilayer path is formed in the structure, and the circuit layer is plugged. The lead wires of each connection are ~ 2 bolts. Electrically, a multi-layered one is used to adjust the electrical discharge, protect the energy, and discharge the circuit. One of them plugs an adjacent body layer and uses a different second plug to electrically connect each wire to a small line of the path.

Fix 丨 * 533577 _ 1-

(4) iw one "one one one one"-"one · · · · one, one J, one wire (path) is broken, because there are other current paths, so it can be avoided Failure of electrostatic discharge components' enhances the protection of electrostatic discharge. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, the following describes the preferred embodiments in detail with the accompanying drawings, as follows: The symbols in the figures are not described. 50, 1 50: Substrate 1 0 0, 2 0 0: pads 102, 106 > 110, 202, 206, 210, 210 > 2 2 0, 224: plugs 104, 112a 114, 116, 118, 130, 212a W, 108 > 112: extension wire 214 21 6 21 8 230 > 222, W2 20 4, 2, 08, 21 2: conductor layer contact window drain electrostatic discharge protection circuit insulation layer, 2 2 6 wire W3: thickness preferred embodiment FIG. 3 is a cross-sectional view showing a circuit connection between a pad of a semiconductor device and an electrostatic discharge protection circuit according to a preferred embodiment of the present invention, and FIG.

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The stomach shown in the figure is not a perspective view of the circuit connection between the pad of the semiconductor element and the electrostatic discharge protection circuit in the preferred embodiment of the present invention.凊 At the same time, my father took pictures 3 and 4. The upper circuit structure of the connection pad 2000 and the electrostatic discharge thinning circuit 2 18 of the present invention includes: a plug 2 02, a conductor layer 204, a plug base 206, a conductor layer 208, a plug 21, and a conductor layer 212. Lead wires 2 1 2 a of extension wires, contact windows 2 1 4, plugs 2 2 0, wires 22 as dummy wires, plugs 224, and wires 22 6 as pseudo wires. In FIG. 3 and FIG. 4, the same pad 200 is formed on the topmost layer of the semiconductor element ', and the ESD protection circuit 218 is provided on the substrate ι50. The connection from the solder joint 200 in sequence is the plug 202, the conductor layer 204, the plug 202, the conductor layer 208, the plug 210, the conductor layer 212, and the drain electrode 216 extending above the electrostatic discharge protection circuit 218. The lead 212a. In addition, the conductive line 212a is electrically connected to the electrode 216 of the ESD protection circuit 218 in the substrate 150 through the contact window 214. The materials of the plug 202, the conductor layer 204, the plug 206, the conductor layer 208, the plug 208, the conductor layer 212, and the lead 2 1 2a are, for example, copper metal. Next, please continue to refer to FIG. 3 and FIG. 4, and set wires 22 2, 22 6 in the upper circuit, and these wires 2 22, 22 6 are used as the realistic wires of the present invention. In FIGS. 3 and 4, the lead 222 is electrically connected to the conductor layer 208, and is electrically connected to the extension lead 212a through the plug 220, and the lead 226 is electrically connected to the lead 202, and is connected through the plug. 224 is electrically connected to the lead 2 22. The materials of the plug 2 2 0, the lead 2 22, the plug 2 24, and the lead 22 6 are, for example, copper metal.

8618twfl.ptd Page 10 533577 Things > / y V. Description of the Invention (6) .............. ...... Two "— Moreover, the pads 2 0 0 and the substrate 1 5 0 There is an insulating layer 230 in between, and the insulating layer 230 covers the above circuit structure. In the structures of the above FIG. 3 and FIG. 4, when the materials of the wires 2 22 and 2 2 6 are the same as those of the conductor layer, the imaginary wires 2 2 2 and 2 2 6 can be respectively connected with the conductor layers 2 0 8 and 2 0 4 are formed at the same time in the same process. Therefore, constructing this imaginary wire does not increase the process steps of the semiconductor device. Moreover, since the wire and the conductor layer are made of the same material, the wire 222 and the conductor layer 208, and the wire 222 and the conductor layer 208 can be regarded as the same conductor layer. It can be known from the structures of Figs. 3 and 4 that when static discharge occurs and static electricity flows into the circuit structure, the current has three paths to flow, that is, the current can pass through the wires 2 2 6 and 2 2 2 and the lead 2 1 2 a, so that the current can flow through the multilayer path composed of the 3 leads. Therefore, it is possible to avoid the problem of disconnection caused by the excessively large current. Moreover, when one of the wires (paths) is disconnected in this structure, since there are still two wires for current flow, the failure of the electrostatic discharge element can be avoided. In addition, due to the effect of current shunting, the individual currents flowing through the wires 2 2 6, 2 2 2 and the wire 2 12 a are small, and the individual line widths of the wires 22 6, 222 and the wire 2 12 a can form smaller wires than conventional ones. Wide, so it has greater variability and freedom in circuit design, which is conducive to improving the integration of semiconductor components. The above description is that the wire width can be reduced. However, the present invention can also be applied to reduce or adjust the thickness of the wire. Please refer to FIGS. 3 and 4 again. In the figure, the wires 21 2a, the wires 222, and the wires 22 6 Thickness &,

8618twfl.ptd Page 11 533577

qi > IV V. Description of the invention (7) w2, w3, in which at least one or more of the total wire thicknesses may be greater than or equal to a predetermined wire thickness wS. Here, the predetermined wire thickness W S refers to a thickness determined by the designer in design according to actual process requirements, and may be, for example, a minimum thickness capable of withstanding current.

As mentioned above, when the predetermined thickness WS cannot be formed with one layer of wire under the limitation of the line width, it can be extended by a plurality of layers of wire thickness (here, it can be extended from I, W2, W3, ... to W of the corresponding number of layers). η) are combined to achieve a predetermined wire thickness Ws, such as Ws two Wi + W2, or Ws two Wi + W2 +. Moreover, the relationship between the predetermined wire thickness W s and the wire thickness of multiple layers (Wi, W 2, W3, " Ιη), the number of wire layers, etc. can be determined by the designer according to the actual needs of the process, for example, it can be Ws 2 W! + W2, or Ws ^ + W2 + W3, or Ws S Wi + W2, or even Ws ^ W, + W2 + W3 ... and so on. Therefore, the present invention can adjust both the width of the wire and the thickness of the wire according to the needs of the process design, so that it can increase the variability and freedom of circuit design. Furthermore, the material of the above-mentioned imaginary wire or even the conductor layer is not limited to copper metal, and materials other than copper metal may also be used, such as a diffused area resistor or polycrystalline silicon to increase the protection capacity of the electrostatic discharge protection circuit. 5 Or it can use any component that is helpful to increase the protection capacity of the electrostatic discharge protection circuit. In addition, the above-mentioned imaginary wires and conductor layers are not limited to use the same material at the same time, and different or partially the same materials can be used respectively according to the needs of the actual process. For example, it is formed in a circuit structure with multilayer paths, which has copper metal, polycrystalline silicon, and diffused resistors.

8618twfl. Ptd Page 12 533577 V. Description of the invention (8)… a realistic wire. Moreover, the above-mentioned upper circuit structure is described by forming three layers of conductor layers and two layers of imaginary wires. However, the number of layers of conductor layers and imaginary wires is not limited to the number of layers disclosed in the preferred embodiment. And can be adjusted according to the actual needs of the process. In summary, the present invention forms a multi-layer current path in a circuit structure. Since the current can be shunted through the multi-layer path, the current flowing through each path is reduced, and the line width of the wire can be formed into a smaller line width. The thickness can also be adjusted according to the needs of the process, so it has greater variability and freedom in circuit design, which is conducive to improving the integration of semiconductor components. In addition, because a multilayer path is formed in the circuit structure, when one of the wires (paths) is broken, there are other current paths, so it can avoid the failure of the electrostatic discharge element and enhance the electrostatic discharge protection ability. In addition, the above-mentioned multilayer path may be constructed of materials other than copper metal, such as resistors or other materials such as polycrystalline silicon, to further increase the electrostatic discharge protection capability of the electrostatic discharge protection circuit. In addition, the construction of the above-mentioned multi-layer path is compatible with the conventional semiconductor device manufacturing process, so it does not increase the number of process steps, that is, does not increase the cost of the process. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the present invention Protection

8618twfl.ptd Page 13

8618twfl.ptd Page 14 533577 Case No. 91110706% year) month | (/ day correction diagram brief explanation brief illustration of the diagram ·· Figure 1 shows the pads of conventional semiconductor components to the electrostatic discharge protection circuit A cross-sectional view of a circuit connection between two circuits; FIG. 2 illustrates a perspective view of a circuit connection between a conventional pad of a semiconductor device and an electrostatic discharge protection circuit; and FIG. 3 illustrates a semiconductor device of a preferred embodiment of the present invention A cross-sectional view of the circuit connection between the solder pad and the electrostatic discharge protection circuit; and FIG. 4 is a perspective view of the circuit connection between the pad of the semiconductor device and the electrostatic discharge protection circuit according to a preferred embodiment of the present invention.

8618twfl.ptc Page 15

Claims (1)

^ 91110706 Patent application scope, 1 ~~ Kinds of connection pads to connect the pads and the circuit structure is provided with a plurality of layers of conductor layers on the design, between the bottom; a plurality of first plugs, conductor layers, and electrical properties Connect each to a first wire, electrically f, and the first wire is electrically connected, and the first wire has a plurality of second wires, and the wires are electrically connected to the pads at different heights. It has a thickness W, to Wn; and a plurality of layers of second plugs, the second wires of the wires, and wires. ^ 2 · If the circuit structure of the patent scope protection circuit is applied, the circuit structure is covered with the insulation layer 3 · If the circuit structure of the patent scope protection circuit is applied, the components are electrically connected by a contact window 4 · If the scope of the patent application is amended The electrostatic discharge protection circuit has a predetermined thickness of one of the substrates and an electrostatic discharge. The electrical heights are arranged in parallel to the circuit structure, the circuit is protected, and the circuit structure includes: the pad is connected to the base; the welding pad is adjacent to the welding The adjacent conductive layers are connected to the substrate closest to the electrostatic discharge to protect the thickness of a thickness%; the second wires are different, each of the conductive layers, and the A conductor layer, one of the circuits is arranged in parallel with the second conductor, and each of the first conductors is electrically connected to the first conductor and adjacent to the first electrical connection, each of the adjacent second conductors, item 1 The connection between the pad and the electrostatic discharge includes providing an insulating layer, and the electrical discharge is included. Connect the pad and electrostatic discharge as described in item 1 where the first wire and the edge are protected from electrostatic discharge. '' Connect the pad and electrostatic discharge as described in item 1. 8618twfl.ptc Page 16 533577 _ Case No. 91110706_ 舞 x 月 ί (/ day _ ^ _ VI. Circuit structure for patent protection circuit, where the conductor layer, the first wire and the second wire The material includes copper metal. 5. The circuit structure for connecting the pad and the electrostatic discharge protection circuit as described in item 1 of the scope of the patent application, wherein the materials of the conductor layers, the first wires, and the second wires include diffusion regions. Resistor 6. The circuit structure for connecting the pad and the electrostatic discharge protection circuit as described in item 1 of the scope of the patent application, wherein the materials of the conductor layers, the first wires and the second wires include polycrystalline silicon. 7. The circuit structure for connecting the solder pad and the electrostatic discharge protection circuit according to item 1 of the scope of the patent application, wherein the materials of the first plugs and the second plugs include copper metal. The circuit structure for connecting the pad and the electrostatic discharge protection circuit described above, wherein each of the first wires and the second wires includes a member selected from the group consisting of different materials and the same materials. 〇9. The circuit structure for connecting the pad and the electrostatic discharge protection circuit described in item 1 of the scope of the patent application, wherein the predetermined thickness is a minimum thickness determined by design that can withstand current, and the thickness of the conductor layers Among W1 to Wn, the sum of the thicknesses of at least one of the conductor layers is selected from: a. Equal to the predetermined thickness; and b. Greater than the predetermined thickness. 1 0. —A circuit structure connecting the pad to the electrostatic discharge protection circuit For connecting the bonding pad to an electrostatic discharge protection circuit provided on the substrate, and the circuit structure has a predetermined thickness in design, the circuit structure package 8618twfl. Pt c Page 17 533577 Amendment No. 91110706 々 The scope of patent application includes: multiple layers of conductor layers with different bases, and each of these conductor layers has multiple first plugs, electrical conductor layers and connections An adjacent plurality of second plugs are electrically adjacent to the conductor layers of the electrostatic discharge protection circuit. 1 1. If the circuit structure of the first electric protection circuit in the scope of the patent application, the circuit structure is covered with the insulating layer 1 2. In the circuit structure of the first patent protection scope of the discharge protection circuit 'metal. 1 3. If the circuit structure of the first electric protection circuit of the scope of patent application, the area resistor. 1 4. If the circuit structure of the first electric protection circuit in the scope of patent application is Shi Xi. 15. If the circuit structure of the first electric protection circuit of the scope of patent application, the material of the plug includes copper metal. 1 6. If the first height of the scope of the patent application is set in parallel with the pad and the base having a thickness W1 to Wn; the conductor layers connecting the pad and the adjacent pad; and the electrostatic discharge protection circuit and The phase conductor layer and the electrical connection between each of the adjacent pads and the electrostatic discharge described in the preceding paragraph include providing an insulating layer, and placing the inside. The connection pads described in item 〇 and the static electricity, wherein the material of the conductor layers includes copper. The connection pads described in item 0, and the conductor layers in the electrostatic discharge include diffusion connection pads and static electricity. The materials of the conductive layers include the connection pads described in item 0 and the electrostatic discharge of the first plugs and the second plugs described in item 0. 8618twfl.ptc Page 18 533577 _Case No. 91110706_ 心 日 __ VI. Circuit structure of patent protection electric protection circuit, wherein the material of each of these conductor layers includes a group selected from the group consisting of different materials and the same material One of the groups-〇1 7. The circuit structure connecting the solder pad and the electrostatic discharge protection circuit described in item 10 of the scope of the patent application, where the predetermined thickness is the minimum thickness that can be withstood by the design. And, among the thicknesses W 1 to W η of the conductor layers, the sum of the thicknesses of at least one of the conductor layers is selected from: a. Equal to the predetermined thickness; and b. Greater than the predetermined thickness. 8618twfl.ptc Page 19