TW530322B - Externally excited torroidal plasma source - Google Patents

Abstract

A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally opposite sides of the workpiece support. At least one hollow conduit is connected to the first and second openings. A closed torroidal path is provided through the conduit and extending between the first and second openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal path. A coil antenna is coupled to an RF power source and inductively coupled to the interior of the hollow conduit and capable of maintaining a plasma in the torroidal path.

Description

530322 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 Five 'invention description () ijj field: The present invention relates to a plasma reactor used for processing workpieces when manufacturing similar components such as microelectronic circuits, flat displays, etc., especially Refers to plasma source. Background: In recent years, driving forces in microelectronic circuits with increased density and smaller feature sizes have continued to make plasma processing of such components more difficult. For example, as the depth of the contact hole increases, the diameter of the contact hole decreases. During the electrical enhanced etching of a dielectric film on a silicon wafer, for example, the etch selectivity of a photoresist by a dielectric material (such as silicon dioxide) must be large enough to allow the etching process to proceed with a diameter of Etching of a contact hole at a depth of fifteen to ten times its depth without interference from the photoresist mask that defines the contact hole. However, because of the recent tendency to use a shorter wavelength of light that requires a thinner photoresist layer and a thinner photoresist layer, the etch selectivity of the dielectric relative to the photoresist must be greater than ever, making this task Even more difficult. Using a process with a lower etch ratio, such as a dielectric etch process using a capacitive coupling plasma, will more easily meet the above needs, and the process of capacitors combining plasma engraving shows a good dielectric relative to light Resistance to etch selectivity. The problem with the capacitive coupling process is that it is slow and therefore produces relatively little ground. Another problem that arises during such etching is the non-uniform plasma distribution. To increase productivity or etch ratio ', higher density plasmas are now used. Generally speaking, the higher density plasma is an inductively coupled plasma. However, 'the precursor gases of these processes are easy to quickly in such a high-density plasma. Page 4 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 g t) ----------- ---------- Order --------- line (please read the precautions on the back before filling this page) 530322 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Invention Description () :: Ion 'causes a plasma containing more free fluorine, a tincture that reduces the selectivity to photoresist at the moment. In order to reduce this tendency, a gaseous carbon treatment gas, such as CF2, can be used. In this treatment, the treated milk is separated in a plasma into: a fluorine etchant and one or more polymer etchant, and Easily accumulates on non-emulsified surfaces, such as photoresist. This result can increase etch selectivity. Oxygen in an oxygen-containing dielectric material will promote polymer polymerization on the dielectric, so when materials containing non-sharp emulsions (such as photoresist) continue to be covered by poly characters to avoid the moment Remove the polymer ... engraved dielectric; material. However, the problem that arises is that, in order to comply with more advanced device designs, the increase in the depth of the contact openings and the decrease in the thickness of the photoresist layer make high-density electrical processes more likely to damage the photoresist layer during the dielectric engraving. Since the plasma density is increased to improve the engraving ratio, a plasma with more inclusions must be used to protect materials containing, for example, photoresist, non-oxidizing, so the rate of polymer removal from the surface of the oxygen-containing dielectric is Quite slowly, especially in narrow confined areas such as the bottom of a narrow contact opening. As a consequence, the photoresist can be properly protected, and when a contact opening reaches a certain depth, the possibility of an etching process blocked by the accumulation of polymer is increased. In general, the etch stop depth is less than the depth required to contact the opening, resulting in component failure. The contact opening may pass through an intermediate isolation silicon dioxide layer to provide a connection between the upper polycrystalline silicon conductive layer and the lower polycrystalline silicon conductive layer. When component failure occurs, for example, when the etch stop depth is less than the distance between the upper and lower polysilicon layers. Or, without the etch stop, the processing window used to achieve high-density plasma is designed for more advanced components on page 5. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male f)- ------------------- Order --------- line (Please read the precautions on the back before filling this page) 530322

A7 B7 invention description (practical application or criminal application may become too narrow, for example, and components with high poverty ratio as the contact window.) Nowadays, it is necessary to have a reactor with an inductively coupled plasma inversion ratio. t ° at, the degree of pulp) and the selection ratio of a capacitive coupling reactor. But

Xt \ y 早 Early—The advantage of achieving the above two types of reaction cryo in a mechanically guided reactor—it is very difficult. The problem with inductively-coupled plasma reactors (especially those with an overhead coil, wafer, or wafer) is that the power applied to the coil antenna is reduced by k, ,, ht, When the 峭 and 峭 are increased to increase the etching rate, the gap at the top of the wafer pair, /, is large enough so that power is absorbed by the plasma area above the wafer. For example, the risk of damage to components in the strong RF field can be avoided. In addition, for the high level of RF power applied to the carriage coil antenna, the wafer and the top and the 'gap must be relatively large' will not maintain the advantage of a small gap. A semi-conductor or top-side semiconductor in the RF field of an inductive coupling reactor at the top of the button can cross the plane k of the wafer across a relatively small gap distance for a conductive potential or ground reference (such as 1 or 2 inches). . Therefore, 1 requires a reactor that not only has the ion density and the remaining ratio of an induction coupling reactor, and the selectivity of a capacitive transfer reactor, but Wei does not have a conventional wafer to the top except the basic limit. : Limitations of degrees, such as the thickness of the plasma shield. In addition, there is a need for a selective light-weighted reactor and an etch rate spoon reactor for the induction induction reactor. The ion density and etching ratio can be improved without increasing the work of RF plasma source. . Page 6 This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 ^^ 7 ______ "|.! Bu — · f Please read the precautions on the back before filling this page)

Order H ---------_ 530322 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (5) Invention description () Purpose and summary of the invention · · _ a plasma reactor for processing a workpiece, It includes a sealing member for enclosing the -vacuum processing chamber ... a workpiece support is located in the sealing member and an overlapping portion facing the sealing member, the sealing member has at least a first and a second opening 'to pass the usual The openings are close to the opposite side of the workpiece support. At least one hollow catheter is connected to the first and second ports. A closed torus path is provided through the conduit, i extending between the second and second openings across the wafer surface. A processing gas supplier is connected to the inside of the processing chamber for supplying the processing gas to the toroidal heterodiameter. The coil antenna is connected to a radio frequency power source and is inductively coupled to the inside of the hollow tube to maintain a plasma in the toroidal path. Brief description of the drawings: Fig. 1 shows a first embodiment for maintaining an overhead plasma current path. Fig. 2 is a side view showing the embodiment corresponding to Fig. 丨 Fig. 3 is a graph showing the free fluorine concentration response in the plasma as a function of the gap distance between the wafer and the top. Fig. 4 is a graph showing the response of the free fluorine concentration in the plasma as a function of the RF bias power applied to the workpiece. Figure 5 shows a graph of the free fluorine concentration response in the plasma as a function of the RF source power applied to the coil antenna. Fig. 6 is a graph showing the change of free fluorine concentration in the plasma as a function of the pressure in the reactor processing chamber. Figure 7 shows the response of the free fluorine concentration in the plasma with an inert diluent. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 g t) ------------ -------- Order --------- line (please read the notes on the back before filling out this page) 530322 V. Description of the invention (Printed as SL by the Employee Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Graph of partial pressure changes. Figure 8 is a graph showing the separation function of a source power processing gas for an inductively coupled reactor and the present reactor. Figure 9 is a variation showing the embodiment of Figure 1. Fig. 10 and Fig. 11 show a variation of the embodiment in Fig. I, which uses a closed magnetic core. &Quot; Fig. 12 shows another embodiment of the present invention, in which τ double% surface electricity The plasma electricity access path passes below the reactor processing chamber. &Quot; Figure 13 shows a variation of the embodiment in Figure 10, the six T plasma source | the force is applied to a coil, the county circle is wound around the The end of the closed pupae. Figure 14 shows an example of the establishment of two parallel toroidal plasma currents. Figure 15 Shows the establishment of a plurality of individual controls. The tenth embodiment is a consistent example of a plasma plasma ^. Fig. 16 shows a variation of the embodiment in Fig. 15 in which parallel super r-plane plasma currents enter and leave the plasma. The processing chamber is vertical: the wall rather than the top. Π 1 11 Figure 17A shows an embodiment of the plasma current across each surface at right angles to each other. Figure 17B shows Figure 17A The embodiment in the figure utilizes,…. A plurality of radial patterns are cited. Figures 18 and 19 show the embodiments of the present invention, in which the toroidal current of the toroid 6 is extended throughout a luhui τ ^ Κ See the path for a wide ribbon suitable for processing large; inch wafers. &Amp; again >> -------- J!! T 2 Please read the > I on the back before filling in this page) Order --------- Line · The 8th edition of this paper is in accordance with the Chinese National Standard (CNS) A4 specification (2i0 ^ 7 Kg £ 7 530322 printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Α7 Β7 Description of invention () Figure 20 shows a variation of the embodiment in Figure 18, in which an external part of the toroidal plasma current path is shown The system is limited. Figure 21 shows the variation of the embodiment using a cylindrical core in Figure 18. The axis position of the cylindrical core can be adjusted in the figure to adjust the ion density across the wafer surface. Assignment. Figure 22 shows the variation of Figure 21-in the figure-a pair of coils are wound around a pair of cylindrical cores. Figure 23 shows a variation of Figure 22 in which a single common coil is shown Figures 24 and 25 show an embodiment that maintains a pair of super-mounted plasma currents at right angles to each other. These plasma currents are suitable for processing large-size wafers. Broadband. Fig. 26 shows a variation of the embodiment in Fig. 25, in which magnetic cores are used to enhance inductive coupling. Fig. 27 shows a modification of the embodiment in Fig. M, in which the right-angle electropolymeric ribbon enters and exits the reactor processing chamber through the vertical side walls, rather than through the horizontal top. Fig. 2 A shows the embodiment of Fig. 2 and Fig. 4 shows the generation of silk gas such as γ and 2 without leaving off. Figure 28B shows the embodiment of Figure 28A including a version of pistil. Fig. 29 shows a preferred embodiment of the present invention, in which a continuous annular pressure-increasing chamber is provided so as to surround the toroidal plasma current with a sealing member. Fig. 30 is a top view corresponding to Fig. 29. 31A and 31B are a side view and a side view, respectively, corresponding to FIG. 30. Page 9 This paper size applies to Chinese National Standard (CNS) A4 specification mo X 297 mm) (Please read the precautions on the back before filling this page) Φ -------- ^ ------ --- Line. 530322 A7 B7 Description of the Invention () Figure 32 shows a variation of the embodiment of Figure 29, where the continuous plenum chamber faces three freely driven RF coils below the 120-degree interval. Fig. 33 shows a variation of the embodiment of Fig. 32. In the figure, three radio frequency coils are driven at 120 degrees to provide an azimuth-rotating plasma. FIG. 34 shows a variation of the embodiment of FIG. 33. In the figure, the RF driving coils are wound around the vertical outer ends of the respective magnetic coagulation, and the opposite ends of the magnetic core extend horizontally to the plenum at a symmetrical distribution angle. Below. Fig. 35 is a version of the embodiment of Fig. 17, in which the hollow tubes that cross each other are contracted as in the embodiment shown in Fig. 20. Fig. 36 is a version of the embodiment of Fig. 24, but each coil 3630, 3640 is wound around a pair of magnetic cores 3610, 3620, respectively, for connection of each RF power source. Fig. 37 corresponds to the embodiment shown in Fig. 35, but has three reentry catheters instead of two, so there are a total of six reentry ports to the processing chamber. Fig. 38 corresponds to the embodiment of Fig. 38, but has three reentry catheters instead of two, and therefore has a total of six reentry ports to the processing chamber. Fig. 39 corresponds to the embodiment of Fig. 35. In the figure, the external ducts are connected to each other in a common plenum 3910. Figure 40 is an example corresponding to Figure 36. In the figure, the external conduit A — a total of 10 pages. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the back first) Please note this page before filling in this page) f Order --------- Line j Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by 530322 A7 B7 V. Description of Invention () There is a plenum 4010 connected to each other. Fig. 41 corresponds to an embodiment of Fig. 37, in which external ducts are connected to each other in a common plenum 4110. Fig. 42 corresponds to the embodiment shown in Figs. 38 to 8. In the figure, the external ducts are connected to each other in a common plenum 4210. Fig. 43 corresponds to the embodiment of Fig. 17 in which the external ducts are connected to each other in a common plenum 4310. Comparative illustration of drawing numbers: 100 processing chamber 105 side wall 110 top 115 wafer base 120 wafer 125 processing gas supplier 130 gas inlet nozzle 135 vacuum pump 150 conduit 150a, 150b open end 152 isolation gap 153 second isolation gap 154 loop 155 First opening 160 Second opening 162 Biased RF generator 164 Impedance matching element 165 First coil 170 Antenna 175 Impedance matching element 180 RF power source 181 Light-radiating blade 185 Second coil 190 Processing gas supply 195 Gas inlet Mouth 210 Gas diffuser sprinkler head 220 Gas diffuser plenum 230 Gas nozzle 1015 Magnetic core 1120 Secondary coil Page 11 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ---- ----------------- Order --------- (Please read the precautions on the back before filling this page) 530322 V. Description of the invention (113 0 Regulating capacitor 1 2 7 0 coil antenna 1 2 3 0 induction coil 1450 second hollow 1470 magnetic core 1260,1265 open 1250 hollow conduit tubular sealing member Detailed description of the invention: The outline of the plasma reactor processing chamber is called the reference section Figure 1. A plasma reactor processing chamber 100 is surrounded by a cylindrical side wall 105 and a top 110, and a wafer base 115 is placed therein to branch a semiconductor wafer or a workpiece 12 A processing gas supplier 125 provides processing gas to the processing chamber ΐθθ through a gas inlet nozzle pipe 130a-13d extending through the side wall 105. A vacuum pump I "controls the pressure in the processing chamber 100, and the pressure is generally maintained at 0. · Below 5 亳 Torr. A half-toroidal hollow tubular full-sealed member or catheter 150 extends in a half circle above the top 1 丨. The guide f 1 5 0 extends outward from the top u outside. Out, but still part of the reactor and forming a wall of the processing chamber. Internally, it co-exists in the same evacuated atmospheric pressure that exists in its i place. Although not shown, 'In fact, the vacuum pump 135 can also be connected to the duct 15o instead of being connected to the bottom of the main part of the processing chamber as shown in Figure i. The duct 150 has an open end 15a sealed around one of the top 110 of the reactor. An opening 155, and its One end 15 Ob is sealed around a second opening 16o in the top 110 of the reactor. The rain openings 150 and 60 are usually located on opposite sides of the wafer support base 115. The hollow duct 15o is the 12th again The paper size of this page applies to the Chinese National Standard (CNS) A4 (210 X 297 male®) -------------------- Order --------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed 530322 A7 B7 i. Description of the invention () Entered because it provides a flow path away from the main part of the processing room ^, One opening, and enter again with another opening. In this description, your I f 1 50 can be considered as a semi-toroid, because the catheter is hollow and provides part of a closed path through which electrical equipment may flow. The entire processing area on the base of the sun-round support base 1 1 5 to complete the entire road. Exquisite use of toroids, orbits of paths and paths or cross-sections of ducts 150. Not only circular or non-circular, but also a fixed or irregular shape that can be square or rectangular or any other shape. The outer duct 150 may be formed of a thinner conductor, such as a metal plate ', and is very strong to prevent the vacuum in the processing chamber. In order to suppress the eddy current of the metal plate of the hollow tube 150 (and thus facilitate the connection of the RF induction field to the inside of the tube 150), an isolation gap 152 penetrates and extends through the hollow tube 150 to divide the hollow tube 50 into two tubes. section. In addition, the gap 1 52 is filled with a ring 1 54 of a thin metal skin instead of a thin metal skin, such as ceramic, so that the gap is vacuum-sealed. A second isolation gap 153 may be provided so that a part of the electric power of the duct 15o is floating. A biased RF generator 162 applies RF bias power to the wafer base 115 and the wafer 120 through an impedance mateh element 164. Alternatively, the 'hollow tube 150 may be formed of a non-conductive material instead of a conductive metal plate. For example, the non-conductive material may be ceramic. In such an alternative embodiment, neither gap i 52 or i 53 will be needed. In addition, an antenna 1 70, such as a coil or winding 1 65, is installed in the hollow guide. Page 13 This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 male f) f Please read the precautions on the back before filling in this Page) Φ

Order --------- Line I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 530322 A7 B7 V. Description of the Invention Twice around an axis that is parallel to the axis of symmetry of the semi-toroidal tube, the tube from the side of the side is connected to a private phase through an impedance matching element 175. Power source 180. The antenna 170 may further include a second slow loop 185 disposed on one side of the central office, the guide & 150, and wound in the same direction as the first coil 165, so the magnetic field generated by the two coils It can be increased. The processing gas from the processing rabbit 100 fills the hollow duct 150. In addition, the knife-off processing gas supply 190 can pass through a gas inlet 195 straight. The center guide 150 supplies the processing gas. The RF field in the outer hollow tube 150 ionizes the tube φ ^ a tortoise shell to produce a plasma. The RF field induced by the loop coil antenna 170 is that the plasma passes through the circle 120 and the top 11 in the tube 150 Between the areas reached to complete one The path of the toroid ^ provincial toroid includes a semi-toroidal hollow duct 150. As shown in the figure, the term super-mounting refers to a path of closed and solid natural nature, but it is unknown or restricts its cross-sectional shape. Or track, which can be circular or non-circular square or other shapes. The circulation of plasma through a region that completes a complete torus path can be considered as a closed plasma circuit. In some embodiments, the wafer The plane has a considerable width, so the toroidal area extends beyond the diameter of the wafer 120 to cover the entire wafer surface. The RF induction field from the coil antenna 170 includes a self-closed field (such as all magnetic fields), and therefore Causes a plasma current to follow the above-mentioned closed toroidal path. It is generally believed that the power from the RF induction field is usually absorbed at each position along the closed path, so plasma ions will be generated along this path. Plasma Ion-generated RF power absorption and ratios vary between different locations along a closed path based on a number of factors. Page 14 Dates and / or magnetic seals are available. Please read the back Pou? Matters to fill out this page) · Order -------- --------- line _ 530322

2. Description of the invention (printed by the Consumer Cooperatives, Bureau of Intellectual Property, Ministry of Economic Affairs and 'Although the current density may be different, the current along the length of the closed path is usually uniform. This current generates a branch current based on the frequency of the RF signal applied to the antenna i 70 However, because the current caused by the RF magnetic field is closed, the current around the closed path circuit must be conserved, so the amount of current flowing in any part of the closed path is usually the same as the amount of current in any other part of the path. Are the same. As will be described below, this argument is used in the present invention to achieve important advantages. In addition, the 'plasma sheath' which defines the path formed on the various conductive surfaces defines the closure through which the plasma current flows Toroidal path. These conductive surfaces include metal plates of hollow conduits 150, wafers (and / or wafer support bases), and tops that cover the wafers. Plasma sheaths formed on these conductive surfaces It is a charge-depleted region. The plasma sheath is due to low mass cathode electrons (1〇_mass negative elect The result is a charge imbalance caused by a larger amount of mobility and less mobility of heavy-mass positive ions. Such a plasma jacket has an electric field that is perpendicular to the local The surface is located below the yoke cover. In this way, the RF plasma current passing through the processing area or the processing area on the wafer is limited and passes between two electric fields perpendicular to the top surface of the wafer. The wafer is facing the gas diffuser. In a concentrated electric field above a small area, such as a wafer, the thickness of the plasma jacket (plus the RF bias applied to the workpiece or other electrodes) is larger. In other locations, for example, the thickness of the plasma jacket on the top and near the large surface of the processing chamber wall is less. Therefore, the thickness of the plasma jacket on the wafer is larger. The wafer and the top / Gathering cover for gas diffuser, page 15 Guan Jiaxian (CNS) A4H ^ x 297 mm on paper ruler -------- ^ --------- ( (Please read the notes on the back before filling this page) 530322 A7 B7 V. Description of the invention () Generally parallel to each other and perpendicular to the flow direction of the process position in the region of the radio-frequency plasma current. (Please read the note on the back? Matters before filling out this page) When RF power is first applied to the coil antenna 1 70, a discharge occurs through the gap 1 5 2 to ignite a capacitor with light from the gas in the hollow tube 1 5 0 Plasma. Thereafter, the plasma current passing through the hollow duct 150 increases, and the inductive coupling of the RF range becomes more dominant, so the plasma becomes an inductive transfer plasma. Alternatively, the plasma may be initiated by other methods, such as by applying a radio frequency bias to a workpiece support or other electrode. In order to avoid edge effects on the periphery of the wafer, a distance exceeding the wafer diameter separates the openings 150 and 160. For example, for a two-inch wafer directly protecting the wafer, the openings 150 and 160 are about 16 to 22 inches apart. For an 8-inch diameter wafer, the openings 50 and 16 are approximately 10 to 16 inches apart. Advantages of the invention: An important advantage printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics is that it runs through a relatively long closed toroidal path (such as a longer length than the gap between the wafer and the top of the reactor). The power in the RF induction field is absorbed, so the RF activation absorption is dispersed over a large area. As a result, the RF power near the gap between the wafer and the top (the processing area 121 shown in Figure 2 is best not to be confused with the isolation gap 152) is lower, thereby reducing damage to similar components from the RF field. Relatively speaking, in the same inductive coupling reactor, all radio frequency power is absorbed within the narrow gap between the wafer and the top 4, so the power is very concentrated in that area. In addition, this fact is often limited to shrink wafers and tops. Page 16 This paper size applies the Zhongguanjia Standard (CNS) A4 specification (2lG x 297 meals) 530322 A7

The capacity of the gap f A a +, Gan a & moon force (in seeking other advantages), or RF power in the «W E domain in the wafer area. Therefore, the present invention overcomes the previous printing of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs = :: sharply reduces the residence time by reducing the response gas = domain ... ^ as before; the relevant and even more important advantage is that in the The RF power of the loopless antenna 170 (larger guidance: the line plasma density can increase sharply. This advantage is achieved by the fact that the rest of the year 1 is less on the surface of the base near the cross section:! =. In this way, the current concentration near the wafer is reduced: if controlled, the density of the electrical components near the wafer surface will increase proportionally. = The toroidal path plasma current through the hollow duct 150 must be exactly the same.) Gap. The electricity collecting current is at least an important factor in the conventional technology. # Do n’t say this 41 ^ 土 疋, not only in the RF field and parts: Genback, but also not only on the wafer surface without the need to increase the applied. " Density is increased 'density and / or the area of application can also be increased' without increasing the minimum gap length between the wafer and the top. Previously, such an increase in plasma density increased the gap between the wafer and the top: increase It becomes necessary 'to avoid creating strong areas on the surface of the wafer. Phase to ground' ... Ming does not need any increase in the gap between the rounded circle and the top to avoid the incidental increase of the RF magnetic field on the surface of the crystal. The increase in density. This is because the applied tangent domain is from the wafer phase, page 17 t @ ϋ (cns) a4 (210 x 297 ^ 57

X Shejiama Denda -------- ^ --------- Line (Please read the phonetic on the back? Matters before filling out this page} Printed by the Employees ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs j ^ 322 Description of the invention () Known. If it is increased to achieve plasma density on the wafer surface-increase the nuclear limit == the gap between the wafer and the top can be reduced to-the basic surface is conductive B, then: point. Example *, if the top is located above the wafer:… less wafer pairs-the gap at the top can improve the electrical or grounding parameters provided by the most conductive: = In addition, the small gap length between the wafer and the top—its Shi Shang ^ ^ ^ m soil% 疋 Sum of the thickness of the electric table cover on the wafer surface and on the top table. Another advantage of the present invention is to go to the post, the force is slow; then, because the RF induction field is along the The super-loop preparation surface for the entire RF plasma current is only added by it (so its absorption will be: dispersed as described above). The top of the processing chamber 11 is different from most inductive dynamic feedback, and does not need to be— The window in the sensing field can therefore be formed by anything negative, such as-two conductive and heavy metals, so it can contain -A conductive gas diffuser, as described below. The result is that the top

Pk provides a reliable potential or ground parameter across the entire surface of the pedestal or wafer 120. Increasing Plasma Ion Density: One way to achieve higher plasma density near the wafer surface is to reduce the cross-sectional area of the plasma path above the wafer to reduce the gap length between the wafer and the top. It can be achieved only by reducing the top height or by introducing a conductive gas diffuser or a sprinkler head over the wafer, as shown in Figure 2. The gas diffuser spray head 210 in FIG. 2 is composed of a gas diffuser plenum 220 connected to the gas supplier 125, and passes through a plurality of gas nozzles 230 to communicate with a processing area located above the wafer 120. connection. Conductive spray page 18 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -------- Order --------- Line (Please read the note on the back first Please fill in this page again for details) 530322 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () The advantage of sprinkler 210 is the close-to-close position. It is H, .. The device will compress the Talium chip above the surface of the wafer, in the vicinity of the two, and live, and thus increase the density of ... Secondly, it provides-even-hook potential reference or ground plane when approaching and crossing the entire surface. Che Yijia ’s approach is to avoid crossing the opening 2. The opening 230 is quite narrow and smaller than the spear and the hair (the preferred hole diameter is large ^. The distance from the adjacent opening may be less than a few meters 0 Conductive sprinkler head 21 · Condensed plasma current path, instead of self-providing-short circuit because a plasma jacket is formed around a part of the nozzle head surface that is immersed in the plasma. The plasma jacket covers the electric current It has a larger -resistance than the space between the wafer 120 and the spray head 210, so all electrical currents are rotated around the conductive spray head 2 10. In order to reduce the toroidal current near the upper processing area, Convergence or each k may not necessarily require the use of sprinklers (such as sprinkler heads). Road shrinkage and subsequent processing areas will increase the amount of ion depletion in the same area as the wafer. The height with the top is completed without the need for the spray head η. If the spray head 210 is excluded in this mode, the processing gas can be supplied into the processing chamber by means of a conventional gas inlet nozzle (not shown). One advantage is that it is reactive and inert The mixing ratio of the physical gas can be introduced through different orifices 23 of different diameters and precisely adjusted, such as the uniformity of the effect of the plasma on the photoresist. Therefore, for example, when the inert gas occupies more than the reactive gas It can be conveyed in a ratio of 23 ° at the periphery of a central radius. When the reaction gas is relatively inert, page 19, the paper size applies the Chinese National Standard (CNS) A4 specification (21〇X 297mm f). If the device is the same as the example, m) -------- Order --------- line (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs System 530322 A7 ____B7 V. Description of the invention () When the body occupies a larger proportion, it can be teleported to the orifice 230 located in the inner circle within the central radius. As will be described later, 'another method to make the toroidal plasma current path be compressed in the processing area located above the wafer is to increase the plasma ion density above the wafer' by increasing the application to the crystal The RF bias power of the circular support base increases the thickness of the plasma jacket on the wafer. As mentioned earlier, the plasma current across the processing area is limited between the plasma jacket on the wafer surface and the plasma jacket on the top (or sprinkler) surface, increasing the plasma coating on the wafer surface. The thickness of the sleeve inevitably reduces part of the cross-section of the toroidal plasma current in the processing area, thereby increasing the plasma ion density in the processing area. Therefore, as will be described in more detail later, as the RF bias power on the wafer support base increases, the plasma ion density near the wafer surface must also increase. High etch selectivity with high etch ratio: The present invention solves the problem of poor money etch selectivity that sometimes occurs in high-density plasma. When the reactors in Figure 1 and Figure 2 provide a high etch rate, such as a degree of induction to engage the electropolymerization reaction, 'an etch with a silicon dioxide such as a capacitively coupled plasma reactor to-photoresist Selectivity (approximately 7: 1). It is generally believed that the reason for success is because the reactor architecture in Figures 1 and 2 reduces the privacy of the decomposition of the reaction process gas. Generally, it is fluorocarbon gas to reduce the free fluorine in the plasma area above the wafer 120. Incidence. Therefore, the relative proportion of free fluorine in the plasma and other species separated from the fluorinated gas can be reduced as expected. Such other types include the paper size on page 20 which is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm)-* * _ ----------! · ------ --Order --------- line (please read the precautions on the back before filling this page) 530322 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Carbon-rich polymer lead species formed in the plasma and deposited on the photoresist as a protective polymer coating. In addition, other species include less reactive etching species such as those formed from carbon fluoride The CF and CF2 in the plasma of the processing gas. Free fluorine is easy to attack the photoresist and the protective polymer coating formed thereon is as intense as it is against silicon dioxide, thus reducing the oxide-to-photoresist etch selectivity. On the other hand, the less reactive species CF and eh are susceptible to slower attack on the protective polymer coatings on which the photoresist is formed, and therefore provide higher etch selectivity. It is believed that the plasma in the present invention Reduction of free fluorine decomposition by species-by reducing reaction gas in plasma This is because the more complex species that were originally separated in the plasma of the fluorocarbon treatment gas, such as CF and CF2, are themselves themselves eventually separated into simpler species that include free fluorine, and according to the plasma The extent of the final decomposition step of the gas retention time. As used in this specification, the word residencency (residency or residence time) is generally equivalent to the presence of a gas molecule and the racer who leaves it. The average time in the processing area above the workpiece 丨 wafer. This time or period refers to the time from the initial shot of the molecule into the processing area until the molecule and / or its separation results are taken along the closed toroidal path Distribute, as described above, < Side-enclosed toroidal path extends through the processing area. As described above, the present invention improves the etch selectivity by reducing the residence time of the fluorine "mole fossil killing process gas in the processing area". The reduction of the 1τ field time is achieved by limiting the electrical% production between the wafer 120 and the top! 丨 〇. The gap or volume between the wafer and the top There are certain paper standards on page 21 that apply the Zhongguanjia Standard (CNS) A4 Regulations ^ χ 297 Male Eding -------- ^ --------- line (please read first (Notes on the back then fill out this page) 530322

Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs, Li Yingsu + "Bai Xian" This reduction can increase the plasma density above the wafer and increase the worming rate. Second, as the volume decreases, the residence time decreases. As described above, in the present invention, it is possible to reduce the volume, because unlike traditional inductive light-reaction reactors, the RF source power is not placed within the range of the Wanyi processing area on the wafer, but along the The entire closed toroidal path of the plasma current distributes the power source. Therefore, the gap between the wafer and the top can be smaller than the thickness of a shell in the field of RF induction, and even because the distance is so small, a significant reduction in the residence time of the reactive gas introduced into the processing area is an important advantage of the present invention. There are two ways to reduce the cross-section of the path and the volume above the 'wafer 120'. One is to reduce the gap distance of the wafer-to-spray head. One is to increase the RF jacket power on the wafer by increasing the RF power applied to the wafer 115 by using RF bias power generator 162, as previously described. Either method will result in a reduction in the free fluorine content in the plasma near the wafer (20) (and an increase in the subsequent dielectric selectivity of the dielectric relative to the photoresist) and use optical emission spectroscopy (optical emission spectrosc〇py; oES) technology. The present invention has three additional methods for reducing the free fluorine content to improve etch selectivity. One method is to introduce a non-chemical reactive diluent, such as introducing argon into the plasma. A better method is to directly inject argon into the hollow duct 15 from the second processing gas supplier 190, and introduce argon outside the processing area to chemically react the processing gas (carbon fluoride gas). The processing chamber is input only through the spray head 210. Due to this beneficial arrangement, the argon ions, neutral particles, and excited particles have been changed from the following in the toroidal path on page 22 ------ --- Order --------- line (Please read the precautions on the back before filling this page) 530322 A7 B7

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () The plasma current spreads through the processing area across the wafer surface to dilute the newly introduced reaction (such as carbon fluoride) gas, and is therefore effective. Ground and salt less reactive gas residence time above the wafer. Another way to reduce the amount of electro-polymerized free gas is to reduce the pressure in the processing chamber. The other method is to reduce the RF source power applied to the coil antenna 170. Fig. 3 is a graph showing that the amount of free gas in the plasma obtained as observed in the present invention decreases as the gap distance between the wafer and the top decreases. Fig. 4 is a graph showing that the content of free fluorine in the plasma decreases as the RF bias power applied to the wafer base u 5 decreases. Fig. 5 is a graph showing that the amount of free fluorine in electropolymerization is reduced by reducing the power of the RF source applied to the coil antenna 170. Fig. 6 is a graph showing that the free fluorine content in the plasma is reduced by reducing the pressure in the reactor processing chamber. Figure 7 is a graph showing that the free fluorine content in the plasma is reduced by increasing the local pressure of an inert diluent such as argon. Figures 3 to 7 only show the propensity for plasma behavior inferred from many oES observations and do not describe actual data. Wide processing window of the present invention: It is preferred that the pressure in the processing chamber is less than Q 5 Torr and can be reduced to 1 millitorr (mT). The processing gas is c4F6. The processing gas is injected into the processing chamber at a first rate of about 15cc / m and a flow rate of i 50CC / m through the gas dispersion sprinkler head. The pressure in the processing chamber is It is maintained at approximately 20 millitorr (mT). Alternatively, the chlorine gas flow rate can be increased to 65 ° C / m and the process chamber pressure to 60 millitorr (mT). The antenna 170 can be activated with 13 megahertz using 500 watts of RF power. The gap between the wafer and the sprinkler head is approximately. .3 British leaves to 2 British pairs. Applied to wafer pedestal page 23 This paper size applies Chinese National Standard (CNS) A4 specification (21〇 * 7 ^^ ~-:-(Please read the precautions on the back before filling this page) t Order- ------- Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 530322 A7 ------- B7 V. Description of the invention () The bias RF power can be 2000 watts to 13 million hertz. Other frequency options are also possible. The power source applied to the coil antenna 17 is as low as 50 Hz or as high as 13 megahertz or even higher. The bias power applied to the wafer base is also the same. The processing window of the reactor in Figures 1 and 2 is much wider than the processing window of a conventional inductively coupled reaction state. The diagram in Figure 8 shows that a traditional induction reaction fits Figures 1 and 2 The specific particle flux of free fluorine in the reactor is a function of the power of the RF source. For a conventional inductive coupling reactor, Figure 8 shows that when the power source exceeds 50 and 100 watts, the free fluorine The specific flux starts to increase rapidly. In contrast, in Figures 1 and 2, The degree of power source that the reactor can accept is close to 1000 watts before the specific flux of free fluorine begins to increase rapidly. Therefore, the power source processing window in the present invention is almost ten times that of a traditional inductively coupled reactor, which is one of the inventions Important advantages: The dual advantages of the present invention: The shrinkage of the toroidal plasma current path near the wafer or workpiece produces two independent advantages without the need for other performance criteria: (1) Any important compromise solution to production The density of the plasma does not require any increase in the plasma power source 'and (2) increases the etching selectivity to photoresist or other materials, as described above. If the conventional electric paddle reactor cannot be used to increase the etching selectivity When the same steps are used to increase the plasma ion density, it is generally considered to be impractical. Therefore, the dual advantages achieved by using the toroidal plasma source of the present invention reveal a major reform over conventional techniques; m more . Page 24 This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) ---------------------- Order ---- ----- line (please read the first Please fill in this page again) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 530322 A7--------- _2Z________ V. Description of the invention () Other preferred embodiments: Figure 9 shows the embodiment shown in Figure 1 A change in the secondary antenna 170 in the figure is replaced by a smaller antenna 91o, which is suitable for the space between the top 110 and the hollow duct 150. The preferred method is that the antenna 9 1 0 is a single coil wound relative to the center of the hollow tube 150. Figures 10 and 11 show a variation of the embodiment shown in Figure 1 which uses a closed penetrable core 1005 extends through the space between the top 110 and the hollow catheter 150. The magnetic core 1015 enhances the inductive coupling of the plasma from the antenna 170 to the hollow tube 150. In addition, it is not necessary to use impedance matching circuit 175 to achieve impedance matching, and instead use a primary coil 1 12 〇, secondary coil 1 1 2 〇 use a regulating capacitor 1 1 3 0 phase around the magnetic core 1 〇 5 connection. The capacitance of the adjustment capacitor 1 130 is selected to cause the secondary coil 1120 to resonate below the frequency of the RF power source 180. For a fixed adjustment capacitor 113, dynamic impedance matching may be provided by frequent adjustments and / or by forward dynamic servo. Figure 12 shows another embodiment of the present invention, in which a hollow tubular sealing member 1250 extends below the reactor and is connected to the inside of the processing chamber through a pair of openings 1260, 1265 at the bottom of the processing chamber. A coil antenna 1270 travels along a toroidal path next to the hollow tube 1250 provided in the mode of the embodiment of FIG. When Fig. 12 shows that the vacuum pump 135 is coupled to the bottom of the main processing chamber, it may instead be coupled to the duct 1250 located below. Figure 13 shows a variation of the embodiment shown in Figure 10 and Figure 11. Page 25 The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------- -------------- Order --------- line (please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau of the Ministry of Economy Staff Consumer Cooperatives 530322 A7 , ^^ ------ B7 _ Li, description of the invention () 4 dagger, 1 |-, China Power Equipment source power system is applied to a coil, the county circle is wrapped around the end of the Fengzica Shao points. The antenna 170 is replaced by a coil 1320 around the center of one of the upper layers of the magnetic core 105. In addition, the coil 1320 surrounds the magnetic core 1015 and is located in a part (not below) of the guide 1 sn w, & Kawakami. However, the coil 1320 may be wound around any part of the magnetic core 105. Fig. 14 shows an extension of the concept of Fig. 13, in which a second hollow $ -shaped sealing member 1450 passes through the first hollow duct 150 in parallel and provides a parallel toroidal plasma current. The ends of the tubular sealing members 415 are connected to the inside of the processing chamber through respective openings at the top p 1. A magnetic core 1470 extends below the two sealing members 1250, 1450 and passes through the coil antenna 17o. Figure 15 shows an extension of the concept of Figures 4 and 4, where a series of hollow tubular sealing members i50a, 150b, 150c, and 150d provide a plurality of annular plasma current paths through the reactor processing chamber. In the embodiment of Fig. 15, the plasma ion concentration in each of the individual middle-S-shaped tubular sealing members 5a-d is individually controlled by a respective coil antenna 17a-d. Individual cylindrical open cores 1520 ^ 1 520 (1 can be inserted into the corresponding coil antenna 17 ^ -d separately. In this way, the relevant center_to_edge ion density distribution can be adjusted by individual RF power Level of source power 丨 〇〇a_d. Figure 16 shows a variation of the embodiment in Figure 15, in which a series of 2 tubular sealing members 150ad extend through the side wall of the reactor instead of the top 110. In addition, in Another variation shown in Figure 16 is the use of a single common magnetic core 1470 adjacent to all the hollow tubular sealing members i50a_d, while the single common magnetic core 1470 has an antenna 17 wound thereon, so a single RF source excites Plasma in all hollow tubular sealing members 15oad. Page 26 ^ Paper size applies Chinese National Standard (CNS) A4 < _ grid (21G x 297 male f) ------------ ---------------- Order --------- line (please read the precautions on the back before filling out this page) 530322 Α7 Β7 Staff Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the cooperative V. Description of the invention (Figure 17A shows the surface across the workpiece to maintain a pair of Examples of surface plasma currents.-For sealing members 150-1 and 150-2 'at right angles to each other and the sealing members 150-1 and 150-2 extend through their respective openings at the top 110, And excited by the respective coil antennas 17〇]. Individual magnetic cores are located within the respective coil antennas 17〇_ and 17 02. This embodiment generates two toroidal plasma current paths at right angles to each other. It is stacked on the wafer 120 to improve uniformity. Two mutually separated right-angled toroids or closed paths are independently powered as shown in the figure, but intersect in the processing area above the wafer. In other areas, no. In order to ensure the separation of the plasma power source applied to the two right-angle paths, the individual RF generators in Fig. 17 are different in frequency. Therefore, the operation of the impedance matching circuits 175a and 175b is decoupled. For example, a, the RF generator 180a can generate a radio frequency signal at η million Hz, and the RF generator 18013 can generate a RF signal at 12 MHz. Alternatively, it can be achieved by offsetting the orientation of the two RF generators 18a, 18b. To independent operation. Figure 17B shows how to use radial blades I. Guide each toroidal plasma current of the two conduits 150 1 and 150-2 through the processing area above the wafer support. Radial blades 丨8 丨 Into each duct opening near the side of the processing chamber < below the edge of the wafer support seat. Radial blade 181 prevents the plasma transfer from one toroidal path to another toroidal path, so two The plasma currents intersect only in the processing area above the wafer support. Page 27 This paper is a standard of China Standard (CNS) A4 丨. _21Q χ 297 public meal 1 --- * I 1 · ------------------- -Order --------- line (please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 530322 A7 _ _ B7 V. Description of the invention () Large size crystal A suitable example of a circle: In addition to the recent trend in the industry to make smaller size components and higher density components, another tendency is to make larger diameter wafers. For example, a ‘wafer with a diameter of 12 inches is currently in production and may be produced with larger diameter wafers in the future. The advantage of large-diameter wafers is greater yield, and each wafer can tolerate a large number of integrated circuits. The disadvantage is that it is difficult to maintain a uniform plasma on the entire wafer surface when processing a large diameter wafer in the plasma. The following embodiments of the present invention are particularly suitable for providing a uniform plasma ion density distribution over the entire surface of a large diameter wafer, such as a 12 inch diameter wafer. Figures 18 and 19 show a hollow tubular seal member 1810. The hollow tubular seal member 1810 is a broad and flat rectangular variation of the hollow duct 15o in the above figure. The variation 85o includes an isolation gap 1 852. Variations produce a plasma width, ribbon, and more suitable for uniformly covering a large diameter wafer uniformly, such as a 12-inch diameter wafer or workpiece. The width W of the tubular sealing member 1 850 and the openings 86, 1 862 in the top 110 should exceed the wafer diameter by about 5% or more. For example, if the wafer diameter is 10 inches, the width W of the rectangular tubular seal member 1850 and the openings 1860, 1862 is about n inches. Fig. 20 shows a variation 1850 of the tubular sealing member 185 of the embodiment of Figs. 18 and 19, and a portion 1864 of the outer tubular sealing member 1850 is compressed in the drawing. However, the uncompressed embodiment of Fig. 18 and Fig. 19 are the preferred method. Figure 20 also shows the use of a focusing magnet 187 ° in the transition region between the compressed and uncompressed portions of the tubular seal member 1850. Focusing magnet page 28 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) --------------------- ^ ---- ----- ^ (Please read the notes on the back before filling this page) 530322 A7

V. Description of the invention () Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 870 to make the plasma method between the compressed and uncompressed parts of the tube-shaped sealing member 850 have a better movement, and in particular There is a more even spread when moving the plasma across the transition between the compressed and uncompressed parts. Figure 21 shows how the cylindrical core 2 1 2 0 can be inserted through the outer area 2 1 2 0 confined by the tubular sealing member 85 2 in Figure 18. In the figure, the axis position of the cylindrical magnetic coagulation 2 120 can be adjusted to adjust the ion density distribution across the wafer surface. The cylindrical core 2 is generally parallel to the axis of symmetry of the tubular sealing member 1 850. Fig. 22 shows a variation of Fig. 21, in which the coil 21 10 passes completely through the outer area 2 1 20 surrounded by the tubular sealing member 185, which is located at one half of the outer area 2 1 20 Replaced by shortened cores 2210, 2220. The side coils 165 and 186 are replaced by a pair of coil windings 2 2 3 0 and 2 2 4 0 in the vicinity of the respective magnetic core pairs 2 2 0 and 2 2 2 0. In this embodiment, the displacement D between the magnetic core pair 22o, 2220 can be changed 'to adjust the ion density near the center of the wafer and the ion density around the wafer circumference. A wider displacement D reduces the inductive coupling near the center of the wafer 'and therefore reduces the plasma ion density at the center of the wafer. Therefore, an additional control element is used to precisely adjust the ion density distribution among wafer surfaces. Fig. 23 shows a variation of Fig. 22. The separated coils 2230 and 2240 are replaced by a single central coil 23 10. The central coil 23 10 is centered on magnetic core pairs 2210 and 2220. . Figures 24 and 25 show an embodiment that provides greater uniformity of plasma ion density distribution throughout the wafer surface. In the embodiment of Figs. 24 and 25, the two toroidal plasma current paths are established to be transverse to each other and at right angles. One of the second wide rectangular hollow sealing members 2420 extends laterally on page 29 of this paper. · T _ Home Standard (CNS) A4 Secret (21 () χ Tearing Meal ------------ --------- Order --------- Line (Please read the precautions on the back before filling this page) 530322

At right angles to the first tubular sealing member 185. The second piece 2420 passes through a pair of openings 243, 2440 through the top i 10 to connect with the inside of the processing fish 'and includes an isolation gap 2452. A pair of side coil windings 2450, 2460 maintain a plasma therein along the side of the second tubular sealed structure 2420, and are driven by a second RF power supply 2470 through an impedance matching circuit 2480. As shown in Figure 24, the two main right-angle plasma currents overlap on the wafer surface and provide a more uniformly covered plasma on the wafer surface. This embodiment is particularly advantageous for processing wafers with a diameter of 0 inches or larger. As in the embodiment of Fig. 17, the embodiment of Fig. 24 generates two toroidal plasma current paths at right angles to each other on a wafer of 1.2 million to improve uniformity. The two right-angle toroids or closed paths are separated and independently powered as shown 'but intersect in the processing area above the wafer, and do not intersect or otherwise transfer or propagate to each other in the other areas. In order to determine the plasma power source separation control applied to each right-angle path, the frequencies of the respective RF generators 180 and 2470 in the 罘 24 diagram are different. The impedance matching circuit 1 7 5 and 2 4 8 0 The operations are separate. For example, + ^ a, the RF generator 180 can generate a radio frequency signal at 11 megahertz, and the radio frequency A machine 2470 can produce 12 million Hz. It can be printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Or, the product of the two RF generators 180 and 2470 is offset to achieve independent operation. Figure 26 shows the modified rectangular sealing member 2650 in Figure 18 with a lack of extravagance 1 y and a mouth τ q embodiment through processing the main training wall 105 and internal connection of the logic instead of through the top 110, and There is an isolation interval 2658 between the moment and the inner seal member 2650. To achieve this, the rectangular dagger has a water seal on the sealing member 2650.

This paper size applies Chinese National Standard (CNS) A4 ^ T (2i〇 X

Flat top 2652 —Pairs 2654 that protrude downwards are at the respective ends of the horizontal top 2652 and a pair of inwardly protruded posts 2656, each of which protrudes downwards from its west to the bottom end of the post 2654 to the side wall The corresponding openings 2105 and 2680 of 105. FIG. 27 shows a second rectangular tubular sealing member 2710 which can be added to the embodiment of FIG. 26. The second rectangular tubular sealing member 2710 includes an isolation gap 2752, except that the rectangular sealing members 2650 and 2710 are at right angles to each other. Except (or at least transverse to each other), the second tubular seal member 2710 is identical to the rectangular seal member 2650 in FIG. 26. The second rectangular tubular sealing member is connected to the inside of the processing chamber through a corresponding opening of the side wall 105, and includes an opening 2720. As in the embodiment of FIG. 25, the toroidal plasma current generated by the tubular sealing members ^ "and 2710 at right angles to each other is superimposed over the wafer surface to provide higher uniformity on a wafer with a wider diameter. The plasma power source is applied to the inside of the tubular sealing member through the respective side coil winding pairs 165, 185, and 245, 2460. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, Figure 2 8 A shows how 〇 A pair of rectangular inner coils 2820, 2840 at right angles within the outer region 286o surrounded by two rectangular tubular sealing members 2650, 2710 replaces (or supplements) the side coils 165, 185, and 245, 246. Each coil 282 〇, 284〇 A toroidal plasma current is generated in a corresponding rectangular tubular sealing member 2650, 2710. The coils 2820, 2840 can be completely independently driven at different frequencies or the same frequency at the same or different phases Alternatively, they can be driven at the same frequency but with a phase difference (such as 90 degrees) to cause the combined toroidal plasma current to rotate at the power source frequency. In this case, Coil 2820 ^ page 31 This paper size applies to Chinese National Standard (CNS) A4 specifications (210 (please read the precautions on the back before filling this page) 1111111 one-port, 11111111 ^^. 530322

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the 2840 series is driven by the sine and cosine parts of a common signal generator 2880, as shown in Figure 28A. The advantage is that the plasma current path rotates azimuthally across the wafer surface at a rotational frequency that exceeds the plasma ion frequency, so non-uniformities will be suppressed better than conventional methods, such as a MERIE reaction with a lower rotational frequency Device. Please refer to Figure 28B. Radial adjustment of plasma ion density can usually be provided by a pair of magnetic cylindrical cores 2892, 2894. The cylindrical magnetic cores 2892, 2894 within the coil 2820 can be moved axially. A pair of cylindrical magnetic cores 2896, 2898 'toward or away from each other' within coil 2820 can be moved axially towards or away from each other. When each pair of magnetic cores is moved toward each other, the induction near the right-angle plasma current center is stronger than the current edge, so the plasma density in the center of the wafer is generally enhanced. In this way, the plasma ion concentration at the center-to-edge can be controlled by moving the magnetic cores 2892, 2894, 2896, 2898. FIG. 29 shows a preferred embodiment of the present invention, in which two tubular sealing members 2650, 2710 are combined into a single sealing member 2910, and the sealing member 2910 extends 360 degrees around the central axis of the reactor to form a single increase. Pressure chamber. In the embodiment of Fig. 29, the plenum 2910 has a semi-spherical lower wall 2 920 and the same semi-spherical upper wall 293. The plenum 2910 is a plenum between the spherical lower wall 2920 and the hemispherical upper wall 2930. An isolation compartment 2921 may extend around the hemispherical upper wall 2920, and / or an isolation compartment 2931 may extend around the hemispherical upper wall 2930. The plenum 2910 is connected to the interior of the processing chamber through a ring-shaped opening 2925 at the top 110. The ring-shaped opening 2925 surrounds the axis of symmetry of the processing chamber 360 degrees. Page 32 This paper size applies Chinese National Standard (CNS) A4 specification (21,297 mm) -------- ^ --------- (Please read the precautions on the back before filling (This page) 530322 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () The pressurizing chamber 2 9 1 0 completely surrounds an area 2950 above the top 1 1 0. In the embodiment shown in FIG. 29, the plasma power source is connected to the interior of the plenum 2910 through a pair of coils 2960, 2965 at right angles to each other. In addition, an inlet system communicating with the coils 2960, 2965 through a vertical duct 2980 is provided, and the vertical duct 2980 passes through the center of the plenum 2910. A better method is that the coils 2960 and 2965 are driven at a 90-degree phase difference, as shown in the embodiment in FIG. 28, to achieve an azimuth-type torpedo plasma current (such as circulating in the wafer plane). A plasma current). The frequency of rotation is the frequency of the applied RF power. Alternatively, the coils 2960, 2965 may be driven at different frequencies. Fig. 30 is a top view corresponding to Fig. 29. 31A and 31B are a front view and a side view corresponding to FIG. 30. A pair of coils 2960, 2965 at right angles to each other may be replaced by an arbitrary number of η separated driving coils and a winding shaft disposed at an interval of 360 / η degrees. As an example, the T'32 figure shows that the two coils 2 9 60, 2 9 6 5 are replaced by three coils 3 2 1 0, 3 220, 3230. The coils 3210, 3220, and 3230 are arranged at 120-degree intervals. The winding shaft is driven by three respective driving RF supplies 3420, 3250, 3260 through respective impedance matching circuits 3241, 3251, 3 261. As shown in Figure 33, in order to generate a rotating circular plasma current, the three coils 3 2 1 0, 3 2 2 0, 3 2 3 0 are not coordinated by 120 degrees with a common power source 3 3 1 0, respectively. driven. The embodiment of Figs. 32 and 33 is better than the embodiment of Figs. 29 with two coils, because there will be more mutual induction between the coils surrounding the vertical coil 2980 rather than passing through it. Figure 34 shows an embodiment in which three coils are located outside the enclosed area 2950, and their induction coils are extended through the catheter. Page 33 This paper applies Chinese National Standards (CNS) A4 specification (210 X 297 mm) -------------------- Order --------- line (please read the precautions on the back before filling (This page) 530322

V. Description of the invention (The respective vertical magnetic cores 34 10 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed 2980 are combined with the enclosed area 2950. Each magnetic seedling, 3410 has an extension above the duct 2980 and surrounds three coils = One of 3220 and 3230. The bottom of each core 3410 is located in the enclosed area 2950 and has a horizontal pillar. The three pillars 3410 are horizontally spaced 120 degrees apart to provide inductive coupling to the plenum. The inside of 291〇 is similar to the induction closing provided by the three coils located in the enclosed area shown in Fig. 32. The advantages of the flat and wide rectangular tubular sealing member shown in the embodiment of Figs. 18 to 28 For the wide width and relatively low height of the tubular sealing member, the flat wide rectangular tubular fence shown in the embodiments of FIGS. 18 to 28 has the advantage that the wide width and relatively low of the tubular fence The diameter of the annular plasma current becomes a wide and thin plasma ribbon, which is more quickly covering the entire surface of a larger diameter wafer. The entire tubular fence need not be the maximum width. Distance deal with The outermost inner wall of the tubular fence can be reduced, as shown in the above-mentioned embodiment of Fig. 20. In this case, the focusing magnet 18 is set at a changing corner between the wider portion 1851 and the narrower portion 1 852. 7 0 is the preferred method, so that the entire distribution of the rainwear located in the narrower part 8 2 5 is spread over the entire width of the wider part 1 85 1. If it is necessary to reach the maximum plasma ion concentration on the wafer surface, The narrower portion 1 852 preferably has a cross-section that is almost as large as the cross-sectional area of the wider portion 1851. For example, the narrower portion 1 852 may be a pass that is approximately the same height and width as the wider portion 1851. It is smaller than the width. It is described here with the Zhiqi core core coil (that is, not the ancient one # q — page 34 of the inspections. The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)- ------- Order --------- Line (Please read the precautions on the back before filling this page) A7 B7

530322 5. Description of the invention () Coil) It can replace the magnetic core coil used, and it can be an open magnetic track type (Arod ◎ type magnetic core) or a closed magnetic track type shown in the figure. In addition, the different embodiments described herein have two or more ring-shaped orbits driven by different radio frequency frequencies that are also driven by the same frequency, or the same or different phases. Fig. 35 is a version of the embodiment of Fig. 17 in which the cross-cut hollow tubes are contracted as shown in the embodiment of Fig. 20. Fig. 36 is a version of the embodiment of Fig. 24, but each coil 3 6 3 0, 3 6 4 0 is wound around a pair of cores 3 6 1 0, 3 6 2 0 for the respective RF power. A link to the source. Figure 37 is an example corresponding to Figure 35, but has three reentry catheters instead of two, so there are a total of six reentry ports to the treatment chamber. Having some symmetrically arranged catheters and more than two re-entry ports (as in the embodiment of Figure 37) is believed to be particularly advantageous for wafers with a diameter of 300 mm or larger. Fig. 38 corresponds to the embodiment of Fig. 38, but has three reentry catheters instead of two, so there are a total of six reentry ports to the processing chamber. Fig. 39 is an embodiment corresponding to Fig. 35, in which the external ducts are connected to each other in a common plenum 3910. Fig. 40 corresponds to the embodiment of Fig. 36, in which the external ducts are connected to each other in a common plenum 4010. Fig. 41 corresponds to an embodiment of Fig. 37, in which external ducts are connected to each other in a common plenum 4110. Fig. 42 is an embodiment corresponding to Fig. 38. In the figure, the external conduit is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) at the 35th edition of the paper scale. ----- 1- —— ——Book ------- —Order --------- Line # (Please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 530322 Economy Printed by the Consumers' Cooperative of the Ministry of Intellectual Property Bureau A7 B7 V. Description of the invention (). A total of 42 and 10 booster chambers are connected to each other. Fig. 43 corresponds to the embodiment of Fig. 17 and a common plenum 4310 is connected to each other in the figure. Advantageous Features of the Invention: The reactor of the present invention provides many opportunities to improve the etch selection ratio without sacrificing other performance characteristics, such as the etch ratio. For example, compressing the toroidal plasma current in photoresist and other materials is an important advantage of Yuming. '' The invention provides great adjustability in the application of the RF plasma power source to the two sections of the toroidal electro-polymerization. As mentioned earlier, a slave is inductively coupled to the toroidal plasma current by an antenna. In many embodiments, the antenna is typically connected to the outer #conduit or plenum by approaching or in close proximity to the outer conduit or plenum. For example, a coil antenna extends along the side of the catheter tube. However, in other embodiments, the antenna is limited to the enclosed area (e.g., Ding Shao) between the duct or plenum and the main reactor sealing member. In the case described below, the antenna can be considered to be "underneath" the catheter rather than along the catheter. Instead, the antenna has a magnetic core (which extends through the enclosed area (between the catheter and the main processing member). Or core core group) embodiment and an embodiment where the core extends beyond the closed area and the antenna is wrapped around the extension of the core can provide greater adjustment. In this embodiment, the antenna is generated through the core. Inductive coupling, so there is no need for the super plasma current in the adjacent duct. In such an embodiment, a closed magnetic core is used, and the antenna is wound around the part of the magnetic core that is farthest from the toroidal plasma current or the duct. . Therefore, in fact, the antenna can be installed almost anywhere, such as the distance from page 36 "> * -------------------- Order ------- --Line (Please read the precautions on the back before filling this page) This paper size is applicable to the China Standard (CNS) A4 specification (21G X 297 male f 1-530322

Plasma treatment is relatively remote, and a magnetic core is used to make it engage with the toroidal pen current at a long distance. V. Description of the invention () Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Finally, the present invention provides a uniform electric table cover on the surface of a wafer or workpiece with a large diameter. This is because in one of the embodiments by forming a super% plasma current-having a wide plasma ribbon that exceeds a width of the wafer.纟 In another embodiment, the uniformity of the ion density of the electrical table across the entire wafer surface is achieved by providing more than two toroidal plasma currents that cross each other or at right angles to each other. The toroidal plasma currents intersect in the processing area above the zygote. The toroidal plasma currents of the other universal I currents will cancel each other out by 360 / n. Each toroidal plasma current can be formed into a wide ribbon of plasma to cover a wafer with a large diameter. Each of the toroidal plasma currents can be activated by a -separated coil antenna, which is arranged along the direction of the -toroidal plasma current. In the preferred embodiment, RF signals of different phases are applied to the respective coil antennas, so that a processing region above the wafer generates a rotating super plasma current to improve uniformity. In this preferred embodiment, the best structure is that the toroidal plasma current flows in a circular continuous plenum, which is connected to the top or the main part of the processing chamber by a -circle connected to the main part of the processing chamber. A continuous annular opening. This latter feature enables the entire toroidal plasma current to rotate in azimuth in a continuous mode. Therefore, although the present invention has been disclosed by these related exemplary embodiments, it should be possible to understand other changes and modifications in accordance with the scope and spirit of the invention as defined by the following patent scope. Page 37 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -------------------- Order ------- --Line (Please read the notes on the back before filling this page)

Claims (1)

530322 A8 B8 C8 D8 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, patent application scope I. A plasma processing chamber used to define a vacuum internal environment for processing a substrate, the processing chamber includes at least: a substrate support A perforated gas diffuser facing the substrate support and used to circulate processing gas into the environment inside the processing chamber adjacent to the substrate support; the gas diffuser and the substrate support define a substrate The processing area is therein; a hollow duct with individual end openings to enter the substrate; the processing area is located on opposite sides of the gas diffuser, and the duct shares the internal environment; the duct is used to receive the treatment in the duct A radio frequency field of gas to maintain a plasma in a land warp, the path extends around the interior of the duct and across a substrate processing area within the interior environment of the processing chamber. 2 · The plasma processing chamber according to item 1 of the scope of patent application, wherein the above path is the re-entry port. 3. The plasma processing chamber according to item 1 of the scope of patent application, wherein the above path is a toroid. 4. As in the plasma processing chamber described in item 1 of the scope of patent application, a plasma current circulates around the path. 5. The plasma processing chamber according to item 1 of the scope of patent application, wherein the cross-sectional area of the above-mentioned duct substantially exceeds the substrate processing area. 6. Plasma processing room as described in item 1 of the scope of patent application, of which the above page 38 (please read the precautions on the back before filling out this page) Click ·--Line · This paper standard applies to Chinese national standards (CNS) A4 specification (210 X 297 mm) 530322 A8 B8 C8 D8 6. The scope of patent application The plasma ion density across the substrate support is generally uniform. (Please read the precautions on the back before filling this page) 7. The plasma processing chamber as described in item 1 of the patent application scope, in which the induced electric field lines of the plasma above extend beyond the plasma processing area of the substrate from the duct One end to the other end. 8. The plasma processing chamber according to item 7 of the scope of patent application, wherein the electric field lines mentioned above are usually parallel to each other. 9. The plasma processing chamber according to item 8 in the scope of the patent application, wherein the above electric field intensity is evenly distributed throughout the plasma processing area of the substrate. I 0. The plasma processing chamber according to item 1 of the scope of the patent application, wherein the above-mentioned conduit includes an isolation gap generally located between the respective ends to prevent the conduit from creating a continuous conduction path between the ends. catheter. II. The plasma processing chamber according to item i of the patent application range, wherein the above-mentioned duct has an outer diameter which is smaller than the diameter of the processing chamber. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs12. The plasma processing room described in item 1 of the scope of patent application, wherein each end of the above-mentioned conduit has a cross-sectional dimension that is at least supported by the substrate The size of the seat is the same. 13. The plasma processing room as described in item 1 of the scope of patent application, in which the paper size on page 39 above applies to the Chinese National Standard (CNS) A4 specification (210 X 297 g) 530322 A8 B8 C8 D8 Printed by the Consumer Cooperative of the Property Bureau. 6. The patent application scope. The plasma processing room also includes a radio frequency power generator. 14. The plasma processing chamber according to item 3 of the scope of patent application, wherein the generator mentioned above includes at least one source of radio frequency induction. 15. The plasma processing chamber according to item 14 of the scope of patent application, wherein the above-mentioned induction source is adjacent to the conduit. 16. The plasma processing chamber according to item 1 of the scope of patent application, wherein the plasma processing chamber further includes a bias RF power source connected to the substrate support. 1 7. The plasma processing chamber according to item 1 of the scope of the patent application, wherein the conduit further includes a gas injection port. 18. The plasma processing chamber according to item 17 of the scope of the patent application, wherein the above-mentioned gas injection port is used to flow the diluent gas, and the gas diffusion plate is used to flow the main reaction processing gas. 1 9. The plasma processing chamber according to item 1 of the scope of the patent application, wherein the gas diffuser plate is used to flow in different mixtures of inert processing gas and reaction processing gas at different radial positions. P.40 This paper is sized for China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)-· Line ·