TW528877B - Optical control-element, its production method and optical component using said optical control-element - Google Patents

Abstract

The purpose of this invention is to provide optical control-element, its production method and optical component using said optical control-element, in which by means of partial controlling the spontaneous polarization-direction several different refraction areas can be realized in a single crystal material. Said optical control-element is formed from crystals and has at least two areas 10, 20, which are adjacent on the boundary 15 and have different refraction-index due to different polarization directions; across the whole 2 areas 10, 20 including said boundary 15, the components are homogeneous. With respect to the direction vector Cb before controlling the polarization direction, and the direction vector Ca after controlling the polarization direction, the control of the polarization direction is carried out by applying an electric field possessing an electric field component whose positive direction is the direction of vector V, where vector V=Vector Cb-Vector Ca.

Description

528877 V. Description of the Invention (0 [Technical Field of the Invention] The present invention relates to a member of a laser generating device, a light control element formed of a crystalline material, such as an optical member, a manufacturing method thereof, and an optical member using the light control element. [Known technology] It uses optical components such as polarizing elements and reflective elements as optical elements for controlling light rays. These elements are composed of bonding of optical components or coating of optical multilayer films. The conventional polarized light beam is used. The structure of the splitter is disclosed in Figs. 25A and 25B. The structure of the polarized beam splitter is that the optical multilayer film 43 is deposited on the surface of the prism 41 of one of the two prisms 41 and 42 in a triangular column shape. It is composed by bonding two diamond mirrors 41 and 42 with a UV adhesive 44. As a deposition material for forming the optical multilayer film 43, generally, a combination of 02 and Si02 is used. However, when irradiated with ultraviolet rays, When the UV adhesive 44 is hardened, it is known that the UV adhesive 44 easily absorbs light. In this way, the UV adhesive 44 absorbs light and allows it to pass through laser light. At the time of the beam, the UV adhesive 44 will generate heat due to the absorption of light, which may damage the polarized beam splitter. In addition, because of the presence of the adhesive, these deposited substances show a strong light when they are injected into strong light. The rapid deterioration and the lack of long-term stability. In addition, polarizing elements such as Glan-Thera diamonds and polarized light analysis diamonds (Glan-Thompson prism) are known to be polarized light using the complex refractive index of crystals Although these diamond mirrors are formed by laminating two crystalline elements, they are chosen to have a refractive index change of 2 528877 J ^ ---------: _ 5 2. Description of the invention (2) The crystalline orientation of the crystalline elements. These diamond mirrors are made of high-priced materials. At the same time, the crystalline elements must be attached with precision honing and the cost is still high. 'The use is limited to science and chemical applications. In the bonding of two crystalline elements, the flatness of the bonding surface is required to be extremely high, and the bonding method is limited to adhesives or diffusion. Bonding, optical contact, etc. It is extremely difficult to attach a thin film crystalline element or many crystalline elements. It is reported that applying an electric field to an optical material can perform polarisation reversal. For example, The use of a cubic dielectric LiNb03, which reverses the spontaneous polarization direction by 180 degrees, is described in the example used as a SHG element (je, Myers et al., J. Opt .

Soc. Am. B; vol. 12, No. 11, 2102, 1 995). Figure 71 'is a schematic cross-sectional view illustrating the conventional method of polar reversal. A plurality of electrodes 46 are periodically formed on the + z side of the z-cut wafer 45 of the LiNb03 crystal, and an insulating layer is formed thereon by a photoresist 47. 0-rings 48 are arranged on both sides of the z-cut wafer 45, respectively. In the 0-ring 48, the electric field filled with the liquid electrode 49 is applied in a z direction, and only the area corresponding to the electrode 46 is reversed. Polar direction. By this, a structure in which a plurality of areas in which polar directions are reversed 180 degrees from each other between adjacent areas is aligned can be formed, that is, a periodic 180 degree polar reverse structure can be formed. It is reported that MgO samples were doped in LiNb03 (M. Nakamura et V. Invention Description (3) "·; Jpn. J · Appl · Phys ·, Vol · 38, L-1 234, 1 999) or for KNb03 Crystals can also be used to form 180-degree polar reversal structures (JP Meynetal ·; Optics Lett ·, Vol 24, No. 16, 1154, 1 999). This prior technique is mainly used to make the direction of spontaneous polarization Reverses the sign of the non-linear constant d by 180 degrees and periodically reverses the sign of the polar wave that generates higher harmonic waves. That is, the above-mentioned prior art is to correct the fundamental wave The relative phase difference with high harmonics is not to cancel the high harmonics, but to be added as in the adjacent areas. Most of the regions with spontaneous partial polarities whose directions have been reversed by 1 80 will be arranged to achieve the purpose of quasi-phase integration. However, in this case, the refractive index ellipsoid is symmetrical with respect to the polar polar axis. Therefore, when the light is incident on the interface between the regions constituting the 180-degree polar inversion structure, it is not biased. The angle of incidence, but the refractive index of each region It is the same, so it is impossible to control the light of reflection or refraction, etc. The object of the present invention is to realize the regions with different refractive indices in a single crystalline material by locally controlling the spontaneous polarization direction of the crystalline material. Provided is a light control element capable of controlling light such as reflection or refraction, a manufacturing method thereof, and an optical member using the light control element. [Invention of the Invention] The present invention is a light control element, which is characterized in that A crystal is formed, with at least two regions whose spontaneous polar directions are different and whose refractive indices are different from each other, and which are connected to each other at the interface, are uniform in composition across the entirety of the two regions including the interface. Explanation of the invention (4) Such a light control element is one in which the spontaneous polarization directions of at least two regions are orthogonal to each other, preferably 60 degrees or 120 degrees. In addition, the symmetry of the aforementioned crystals is Orthorhombic crystals are preferred. Further, the crystal system is preferably formed of any one of KNb03 or KTi0P04. In addition, the present invention is a kind of The manufacturing method of the light control element described above is characterized in that the electrodes are arranged in the plane of the easy axis of rotation orthogonal to the polarization direction before the control to generate an electric field vector component, and the polarization direction before the control and the electric field are arranged. After the vector formation angle is set to 0, the magnitude of the applied electric field is set to E a at 0 ° < 0 S 90 °, and the intensity of the polarized rotating electric field at 90 degrees is set to E th 9. ) -Ethgo> 0, and E a · Sin (θ) -Et h9 0 > Ea · Cos (Θ) with an angle of 0 and an electric field of Ea, an electric field is applied to the crystal to control the bias. Polar directionο In addition, the present invention is a method for manufacturing the aforementioned light control element, which is characterized in that the electrode is configured to generate an electric field vector component in a plane that is orthogonal to the axis of easy rotation that is polarized before the control. After setting the angle between the polarization direction and the electric field vector before the control to 0, 90 ° < 0 S 180 °, the magnitude of the applied electric field is set to Ea, and the 90-degree polarized rotating electric field intensity is set to Ε th The intensity of the electric field of 9 0 to 180 degree polar inversion is set to Ethl8Q 'to satisfy Ea · Sin (Θ)-Eth90 > — Ea · Cos (Θ) — Ethl8l D, and 〇 < Ea · Sin (Θ)-Eih9Q The angle Θ and the electric field are applied to the crystal under the condition that the magnitude of the electric field is Ea to control the polar axis. In addition, the present invention is a method for manufacturing the aforementioned light control element.

# 4528877 V. Description of the invention (5) It is characterized in that for the direction vector Cb of the polar direction before the control and the direction vector Ca of the polar direction after the control, the vector V = the vector Cb-the direction of the vector V of the vector Ca is formed , Is used to form a positive electric field by controlling the polarization direction by applying an electric field holding an electric field component. In addition, the present invention is an optical filter, which includes a plurality of regions where the polar directions are periodically different from each other and the refractive index is periodically different from each other. Sentence of crystalline material. In addition, the present invention is a laser beam combiner, characterized in that it is formed of birefringent crystals having at least two regions with a uniform composition and different polar directions, and is incident from the outside and each Of the laser beams in most regions, when two laser beams are used as a pair of laser beams, the beams in the aforementioned region of the birefringent crystal are used to block, so that at least one pair of laser beams is birefringent. The output end faces of the laser beams forming the passive crystals are close to each other to define the aforementioned polarizing directions. In addition, the present invention is an optical waveguide element, which is an optical waveguide element formed of a high-dielectric substrate with a uniform composition provided in the optical waveguide, and is characterized in that the polarized region of the region where the optical waveguide is formed is polarized. The polarization direction of the region sandwiched with the optical waveguide becomes different, and the refractive index of the region where the optical waveguide is formed is higher than that of the region sandwiched with the optical waveguide. In addition, the present invention is a light deflection element, which is characterized in that it has an electrode provided on a main surface of a high-dielectric substrate having a uniform composition, and the high-dielectric substrate has a polarized axis and a different predetermined shape. Majority

V. Description of the invention (6) The polar region has an interface with the adjacent region, and the polar axis in each region has a vertical component to the interface. The composition is such that it has been injected into the aforementioned high-dielectric substrate. The light beam passes through most of the polarized regions of a predetermined shape. In addition, the present invention is a light control element, which comprises a high-dielectric substrate having a uniform composition with an electro-optical effect and an electrode provided on a main surface of the high-dielectric. In the bulk substrate, the polar polar axial system is different and most of the polar polar regions are periodically formed. There is an interface between the regions. The polar polar axial system in each region has a vertical component to the interface. The light beam of the high-dielectric substrate is configured as the aforementioned polarized region formed periodically. In addition, the present invention is a variable difference time delay line, which is characterized by comprising: a high-dielectric substrate having a uniform composition; and one or more electrode pairs formed on the high-dielectric substrate. The polarized regions in the substrate are defined on the two main surfaces; the polarized direction of the polarized regions is changed by applying an electric field to the aforementioned electrode pair, and the refractive index of the polarized light direction of one of the two Correct the differential time delay between the two polarization directions. [Detailed description of the preferred embodiment of the present invention] Referring to the following drawings, the preferred embodiment of the present invention will be described in detail. The inventors of this case used crystalline materials whose crystal symmetry was orthorhombic to cut out the crystalline elements at various cutting angles, and when forming electrodes and applying an electric field in the cut crystalline elements, it was surprising It was also confirmed that there was an easy-to-rotate axis with a spontaneous off-polar axis. 528877 V. Description of the invention (7) For example, a cube-shaped crystalline element 32 as shown in Fig. 1 is cut out from the crystal of potassium niobate (KNb03), and the c-axis (spontaneous polar axis) and the electrode pair 30, 31 are cut out. On the other hand, the electrodes 30 and 31 are formed on the b-plane orthogonal to the direction of the electric field application. When the electric field Ea is applied in the b-axis direction, the spontaneous off-polar axis rotation of 90 degrees will not be seen. The so-called b-plane Refers to the surface orthogonal to the b-axis. On the other hand, as shown in FIG. 2, the electrodes 30 and 31 are formed on the a-plane. When the electric field Ea is applied to the a-axis direction, it can be confirmed that the b-axis is used as the rotation center and the c-axis is used. (Spontaneous polar polar axis) Rotate at 90 degrees to produce 90 degree polar rotation. At this point, the so-called a-plane refers to a plane orthogonal to the a-axis. In addition, as shown in FIG. 3, when the electrodes 30 and 31 are formed on the 45-degree plane of a-c, and an electric field is applied in the 45-degree direction of a-c, it has been confirmed that the poles rotate 90 degrees. Similarly, the b-axis is generated as the rotation center. The 45-degree planes of a to c are planes whose angles of the a-axis and the b-axis are 45 degrees, respectively. In the case of such KNb03 crystals, the axis of rotation of the spontaneous off-polar axis is easily the b-axis. Relative to the easy rotation axis orthogonal to the spontaneous off-polar axis as described above, an electrode for generating an electric field vector component is formed in the plane. It can be confirmed that by applying an electric field at an angle to the spontaneous off-polar axis, The spontaneous polar axis (spontaneous polar direction) can be controlled in a direction other than 180 degrees by using the electric field component in a direction perpendicular to the spontaneous polar axis. The relationship between the direction of spontaneous polarization and the direction of electric field application is shown in FIG. 4. The original spontaneous polar system will be switched as a mechanism. Considering the next three electric field components and three switching critical electric fields for qualitative 528877 V. Description of Invention (8). (1) The effective electric field strength Epa in the current polar direction will be maintained. , Is that after considering switching from the status quo to the status quo, the critical unitary electric field E th (0 ° — 0 °) = 0, therefore: Epara = Ea · Cos (0) (O0 < 0S 90.) = 0 ( 90. < 0 $ 180 °) (2) Beyond the critical 値 electric field Eth (0 ° — 90 °) = Eth9Q in the case of 90 ° rotation from the current polar direction The effective electric field component EPmP is formed as: EP6γρ = Ea · Sin (0)-Eth90 (0〇 < 0 '180.) (3) Beyond the critical E electric field Eth when it is rotated 180 degrees from the current polar direction (0 ° — 180 °) = Ethl8Q. The effective electric field component Eantl that causes it to rotate 180 degrees polarized is formed as: Eanti = 〇 (〇〇 < 0 S 90〇) = —Ea.Cos (0) — Ethl8O (90. < 0S18O〇) For KNb03 crystals, it has been reported that the inversion electric field that causes 180-degree polar inversion is 500V / mm at room temperature (EthU () = 500V / mm) (J · P. Meyneta 1.; Optics Lett., Vo 124, No. 16, 1154, 1999). In addition, when performing 90-degree pole rotation under the arrangement conditions shown in Fig. 2, the critical 値 electric field of 90-degree pole rotation is known as Eth9Q = 100V / mm at room temperature. The use of these numbers and facilities plus electric field strength Ea = 1,000 V / mm is shown in Figure 5 as the effective electric field Epara used to maintain the spontaneous polar direction, and -10 to cause 90-degree polar rotation -528877 V. Description of the invention (9) Angular dependency of the effective electric field component Eperp and the effective electric field component Eanti that performs 180-degree polarization reversal. As shown in Figure 5, point A1 is the intersection of Epara and Ep ^ p, and point B1 is the intersection of Eρ_ and Eantl. The spontaneous polarization direction is the curve state in which the electric field strength component reaches 0 or more and the highest value is given priority among the curves Epara, Eper, and Eantl. For example, in the case of 0 = 25 °, although Epara and Eperp are both + (positive) 値, they remain parallel because they are Epara > EPmP. That is, no 90-degree polarized rotation occurs. These states differ by the strength of the electric field Ea. Figure 6 reveals the dependence of the electric field strength of each electric field component at an angle of 0 = 60 °. Line 1 is the electric field component that keeps the initial spontaneous polar state, line 2 is the electric field component that causes 90-degree pole rotation, line 4 is the component that maintains its state after 90-degree pole rotation, and line 3 is performed After 90-degree polar rotation, the components return to the original polar direction. Here, when the applied electric field strength Ea = 200 V / mm, among the straight lines 1 and 2 in FIG. 6, the larger one is taken as the straight line 2, so the polarized rotation of 90 degrees is performed (A2 in FIG. 6). point). After the 90-degree polarized rotation occurs, among the straight lines 3 and 4, the larger one is the straight line 4 (point B2 in FIG. 6), so the 90-degree polarized rotation is maintained. It is known that this state can be maintained by gradually reducing the electric field and removing the electric field. On the other hand, in the case of 0 = 13 5 °, it can be seen from Fig. 5 that, because Ep ... > Eanti, a 90-degree partial pole rotation state is obtained without generating a 180-degree partial pole reversal. In addition, it will be caused by 180-degree partial pole reversal after exceeding point B1 in Figure 5. -11-528877 V. Description of the invention (1 o) The enhancement of the electric field component results in 180 degree partial pole reversal. In this way, in order to generate a 180-degree pole reversal other than a 180-degree pole reversal, it is important to consider the relationship between the angle 0 and the electric field angle E a. In addition, it must be noted that the magnitude of the electric field strength Em 8Q, Eth9Q or its difference system varies depending on the material. In addition, these systems are temperature or stress dependent. After increasing the temperature, the anti-electric field strength is low because it is close to the Curie temperature. By changing the temperature at which the electric field is applied, it is of course possible to reduce the switching electric field (anti-electric field strength). In the above description, although the one-dimensional electric field vector is considered, the electric field is concentrated in an electrode structure in which most electrodes are periodically arranged. In the case of an electrode structure having a complicated electric field distribution, a complicated electric field distribution is considered. The influence on the control of the polar direction is more important. In this way, by manufacturing a crystal element having two regions that control the formation angle of the spontaneous polar direction of each region to 90 degrees, the difference in refractive index can be felt on the two interfaces. Hereinafter, this will be used as A specific explanation. Fig. 7 shows the state of the boundary interface region where the formation angle of the spontaneous polar direction of each region is 90 degrees and the two regions are absent. The formation angle of each off-axis (c-axis) of the two regions 10 and 20 is 90 degrees. The interface 15 between the two regions 10 and 20 is formed by crystal symmetry. For the two regions 10 and 20, each c axis forms a direction of 45 degrees. The direction parallel to such an interface 15 is the z-axis. The angle 0 from the axis perpendicular to the interface 15 is set as the incident angle of the light L. The polarization direction of the light L is in the incident plane (P wave). -12- 528877 V. Description of the invention (11) The refractive index ellipse 11 in the region 10 is that the short axis (+ c axis) is formed at 135 degrees as seen in the z direction, and the refractive index ellipse in the region 20 In the 12 series, the minor axis (+ c axis) is formed at 45 degrees as seen in the z direction. In the region 10, the refractive index of the P wave is formed so that the intersection length of the plane perpendicular to the traveling direction of the light L and the refractive index ellipsoid 11 is 0A. On the other hand, in the region 20, the perceived refractive index of the P wave is formed as the intersection length OB of the plane perpendicular to the direction of travel of the light L and the refractive index ellipsoid 12. In this way, the refractive index ellipse system rotates 90 degrees in the region 10 and the region 20 to form 0A > OB, and causes a difference in refractive index. In the case where the incident surface has a surface including a b-axis and a c-axis, the dependence of the incident angle Θ on which the difference in refractive index of P-wave sensation is calculated is shown in FIG. 8. In FIG. 8, the relationship between the angle of incidence and the refractive index in the region 10 shown by the curve L 10 and the relationship between the angle of incidence and the refractive index in the region 20 shown by the curve L2G. It can be seen from the graph in FIG. 8 that the maximum refractive index difference will occur when the interface is incident at an angle of 45 degrees. On the other hand, for polarized light (S wave) in the direction perpendicular to the incident surface (direction perpendicular to the 7th drawing surface), there is no incident angle dependence of the complex refractive index ellipsoid. Therefore, in area 1 There is no difference in refractive index between 〇 and the region 20. If this phenomenon is used, it is not necessary to follow two or more optical components, and it is possible to realize light control by one element. In the above description, the incident surface is described as being incident on a plane including the b-axis and the c-axis. However, the same reflection or refraction of light on the incident surface including other axes will result in the same. Refractive index difference. -13- 528877 V. Description of the invention (12) A person who realizes a 90 degree rotation of the spontaneous off-polar axis can achieve a 45-degree direction by applying an electric field to the spontaneous off-polar axis. The present invention is to realize the rotation of the polar direction other than 180 degrees, whereby the spontaneous polar direction produces a refractive index difference at the boundary interface between two different regions, and can control the refraction and reflection of light. These causes are that if the different directions of the materials can be symmetrically reversed on the interface, the material properties of the starting refractive index can be changed to form the mirror symmetry with the interface as the boundary. Furthermore, the inventor is In order to use a crystal material with crystal symmetry as an orthorhombic crystal, cut out the crystalline element at various cut-out angles, form an electrode, and apply an electric field, plus the spontaneous bias as described above. More surprisingly, in order to confirm that the direction of spontaneous bias is prone to change, the relationship between the direction of the meta-spontaneous bias is greater than that of the new spontaneous bias. For example, take potassium niobate crystals. Figure 9 shows the crystal coordinate axis on the operation of the potassium niobate crystal. The crystal axis system of orthorhombic potassium niobate crystals has three types: a-axis, b-axis, and c-axis, and are orthogonal to each other. However, in order to make the operation easier in the polar direction, it is considered to make the potassium niobate crystal appear to be cubic, and the coordinate axis is set as shown in FIG. 9. In Figure 9, the direction is represented by [x / y / z], and the direction [0/0/1] is equivalent to the b-axis, and the direction [1/1/0] is equivalent to the c-axis, the direction [一1/1 / 〇] is equivalent to the c-axis, and the c-axis direction is the polar direction before control. Next, a description will be given of how to obtain a polarized direction. Obtaining the crystal of potassium niobate-14- V. Description of the invention (13) After the polar direction is represented by the coordinates in Figure 9, the direction including the polar direction 21 before the control [1/1/0] is 12 group. One polar direction is shown in Figure 10. The polar direction is converted to the direction [—1/1/0]. Therefore, it is the direction [1/1 / 〇] for the polar direction 21 before the control. Called 180 degrees polar direction 22. The other polar direction is shown in Fig. 11, because the polar direction changes to the direction [-1 / 1/0] or [1 / / 1/0], so it is the same as the polar direction before control. The 21 direction [1/1/0] is referred to as the 90-degree polar direction 23. Here, the angle formed by the polar direction before the control [1/1 / 〇] and the new polar direction [-1/1/0] or [1 / -1 / 0] is strictly only 90 degrees. Offset. This is because, in the coordinates of a quasi-cubic crystal, the angles formed by the principal axis directions [1/0/0], [0/1/0], and [〇 / 〇 / 1] are not right angles, and their sizes are not The reason for the 'equivalence' when shifted by 90 degrees depends on the shift of the angle formed between the main axes and its magnitude. As shown in Figure 12, the other polar direction is changed to the direction [1/0/1], [0/1/1], [1 / 〇 / — 1], [〇 / 1 /-1], so its direction [1 / 1/0] with respect to the polar direction 21 before control is referred to as a 60-degree polar direction 24. Here, the prepolar direction [1/1 / 〇] and the new polar direction [1 / 〇 / 1], [〇 / 1/1], [1/0 / — 1], [0/1 / -1] The angle 'formed' is strictly shifted by only 60 degrees. This reason is the same as the case of a 90-degree polar direction. -15- 528877 V. Description of the invention (14) The other polar direction is shown in Figure 13 as the polar direction changes to the direction [一 1/0/1], [0 / — 1/1] , [― 1/0 / — 1], [0 / — 1 / —1], so it is referred to the direction of the polar direction 21 before the control [1 / 1/0] as 120 degree polar Direction 25. Here, the polar direction [1/1/0] before the control and the new polar direction [-1/0/1], [0 / — 1/1], [― 1/0 / —1], [ 0 / — 1 / — 1], the angle is exactly shifted by only 120 degrees. This reason is the same as in the case of a 90-degree polar orientation. Next, the control methods of these polar directions are described. As shown in FIG. 14A, the crystalline element 32 is cut out from the KNb03 crystal in a direction [1 / 1/0] perpendicular to the c-axis and the vertical plane, and the cut crystalline element 32 is perpendicular to the direction, respectively. Electrodes 30 and 31 are mounted on the surface of [1/1/0] and the direction [一 1 / — 1/0]. Between the electrodes 30 and 31, the direction [1/1 / 0] is to form a positive electric field and apply an electric field. At this time, it can be confirmed that the region sandwiched between the electrodes 30 and 31 is such that the polarization direction formation direction [−1 / -1 / 1/0] forms the 80 ° polarization direction 22. At this time, no polar direction of 60 degrees, polar direction of 90 degrees, and polar direction of 120 degrees were not observed. Next, as shown in FIG. 14B, for example, starting from KNb03 crystallization, the crystalline element 3 2 is cut out on a plane perpendicular to the 45-degree oblique direction [1/0/0] from the c-axis, and the crystalline element 3 2 is cut out. On the surface, the electrodes 30 and 31 are respectively installed on the surfaces perpendicular to the direction [1 / 1/0] and orthogonal to the direction [−1/0/0], and between the electrodes 30 and 31, the directions [1/0 / 〇 ] When the electric field is applied in order to form a positive electric field, it can be confirmed that the region sandwiched between the electrodes 30 and 31 is -16- 528877 V. Description of the invention (15) The domain system is formed in the direction of the polar pole [—1/1 / 0] to form a 60-degree polar direction 24. At this time, no polar direction of 60 degrees, polar direction of 90 degrees, and polar direction of 120 degrees were not observed. Next, as shown in FIG. 14C, for example, KNb03 crystals are cut out of the crystal element 32 on a plane perpendicular to the direction [1/0 /-1], and the cut crystal elements 32 are orthogonal to the directions, respectively. The electrodes 30 and 31 are mounted on the [1/0 / — 1] and the direction [-1/0/1]. Between the electrodes 30 and 31, the direction [1/0 / — 1] is applied to form a positive electric field. In the case of an electric field, it can be confirmed that the region sandwiched between the electrodes 30 and 31 is such that the polarization direction formation direction [0/1/1] forms a 60-degree polarization direction 24. At this time, the 90-degree polar direction, the 120-degree polar direction, and the 180-degree polar direction were not observed. Under the same idea, as shown in FIG. 14D, for example, from KNb03 crystal, the crystal element 32 [—2 / — 1/1] is cut with a plane perpendicular to the direction [—2 /-1/1]. On the cut-out crystalline element 32, electrodes 30 and 31 are respectively installed on the direction [2/1/1] and the surface orthogonal to the direction [2/1 / — 1], and between the electrodes 30 and 31, if the direction [2/1 / — 1] When a positive electric field is formed and an electric field is applied, it can be easily predicted that the region sandwiched between the electrodes 30 and 31 is the direction in which the polar direction is formed [—2 / — 1/1] A 120 degree polar direction 25 is formed. By generalizing the above example, the inventors discovered that the control of spontaneous extremes was achieved by a rather simple model as shown in FIG. That is, when the direction vector of the spontaneous polarization direction 21 before the control is set to Cb, and the direction vector of the spontaneous polarization direction 26 after the control is set to Ca, -17-4528877 is produced. V. Description of the invention (16) The polar region holding the direction vector Ca of the spontaneous polar direction 26, so for the region to control the polar direction, if (vector Cb)-(vector Ca) = (vector V) direction 27 is applied to form a positive electric field It is obvious that the electric field that holds the electric field component generally can control the spontaneous polarization direction to the desired direction. In the foregoing example, it is expressed as (vector V) = (vector Cb) and (vector Ca), then it is formed as shown in the following table. 1 ° Vector V Vector Cb Vector ca 180 ° Polarity [1/1/0] [1 / 1/0] (-1 /-1/0) 90 ° polarized pole [1/0/0] [1/1/0] [-1 / 1/0] [0/1/0] [1/1 / 0] [1 /-1/0] 60 ° pole [0/1 /-1] [1/1/0] [1/0/1] [1/0 /-1] [1/1 / 0] [0/1/1] [0/1/1] [1/1/0] [1/0 / — 1] [1/0/1] [1/1/0] [0/1 / — 1] 120 ° polar pole [2/1 / —1] [1/1/0] [One 1/0/1] [1/2 / -1] [1/1/0] [0 / — 1 / 1] C2 / 1/1] [1/1/0] [—1 / 0 /-1] [1/2/1] [1/1/0] [〇 /-1 / — 1] or more In the explanation, although the one-dimensional electric field vector is considered, in the case of an electrode formed periodically, in the case of an electrode structure having such a complicated electric field distribution as electric field concentration, the relationship with the electric field distribution is even more considered. Is important. In addition, in the above description, ‘

-18- 528877 V. Description of the invention (17) The size of the field makes a contact, but for the spontaneous bias direction 2 1 before the control, only the 60-degree polar region, the 90-degree polar region, and the 120-degree bias are produced. In the case of any one of the polar region and the 180-degree polar region, it is best to increase the electric field application so as to change the electric field (anti-electric field) in the desired polar direction to minimize the electric field. To exceed the necessary electric field in order to change in an undesired polar direction. As described above, for example, a crystalline element having an initial spontaneous polarization direction and a spontaneous polarization direction after the spontaneous polarization direction is controlled to have a 60-degree polarization region that has been rotated by 60 degrees is produced, thereby, At the boundary between the 60-degree polar region and the initial polar region, there is a difference in perceived refractive index. This will be specifically described below. The state of the boundary between the initial polar region 10 and the 60-degree polar region 20 is shown in FIG. 16. The angle between the polar direction 21 of the initial polar region 10 and the polar direction 27 of the new polar region 20 is about 60 degrees. It is known that the interface 15 between two regions is formed on the (h / k / k) plane or (k / h / k) plane (commonly referred to as the s-wall plane) by the relationship between crystal symmetry and piezoelectric constant. Or perpendicular to the direction [―1/1/0] or the direction [0 / — 1/1] (E. Wiesendanger, Czech. J. Phy s. B2 3, p. 91 (19 73)). Here, h and k are not limited to integers. For example, the (0.3 / 1/1) plane and (1 / 0.3 / 1) plane can be observed in a 60-degree polar region. In addition, the so-called (x / y / z) plane refers to a plane perpendicular to the direction [X / y / z]. As shown in FIG. 17, the initial deviation is -19- 528877 when the surface perpendicular to the interface 15 is cut off. 5. Description of the invention (18) The refractive index ellipsoid of the polar region (0 degree polar region) 1 0 and Outline drawing of refractive index ellipsoid 17 of 60 degree polar region 20. Here, the X-axis and Y-axis are acquired in a direction parallel to the interface 15 and the Z-axis is acquired in a direction perpendicular to the interface 15. As shown in FIG. 17, it can be seen that the major axis of the refractive index ellipsoid with respect to the X axis is P in the 0-degree polar region 10 and P in the 60-degree polar region 20, which are inclined in the opposite directions. Next, the case where light is incident from the 0-degree polarized region 10 will be described in the XZ plane. For interface 15, the light L, which is incident at the angle of incidence of 0 from the Z axis, is considered as the light incident from a direction approximately parallel to the direction of large interface 15. In addition, the refractive index of the light perception in each medium is approximately equivalent to the refractive index ellipsoids 16 and 17 shown in Fig. 17 and is used. In the direction of the long axis OB of the refractive index ellipsoid 16 of the 0 degree polarized region 10, when the light with the polarization direction is incident, the light is felt at the interface 15 for the 60 degree polarized region 20 The refractive index is necessarily smaller than the refractive index felt for the 0-degree polar region 10. Therefore, after 0 is formed above a certain angle, the polarized light in the OB direction is totally reflected by the interface 15. On the other hand, when the polarized light is incident on the short-axis OA direction of the refractive index ellipsoid 16 of the 0-degree polarized region 10, the refractive index of the light at the interface 15 for the 60-degree polarized region 20 The system must be larger than the refraction area felt. Therefore, no total reflection is caused, and all or a part of the light is transmitted through the 60-degree polar region 20. Thus, the 60-degree polar region 20 has a structure in which a difference in refractive index is felt at the interface 15. What's more, feel -20- 528877 V. Description of the invention (19) The relationship between the magnitude of the refractive index and the structure of the polarized light is different. If the above-mentioned phenomenon is used, it is not necessary to connect two or more optical components, and then it is possible to realize light control by one element. Here, when the incident surface is the XZ plane, the description will be given with respect to the incidence of light. However, the same applies to the reflection and refraction of light in a plane including other axes. difference. In this way, a person who rotates the spontaneous polar direction by 60 degrees, for example, as described above, creates an electrode in the area used to control the polar direction, and forms (vector V) = (vector Cb)-(vector Ca). A positive electric field is formed in the (vector V) direction, and it can be easily achieved by applying an electric field holding an electric field component. In the present invention, by implementing rotation control in a polar direction other than 180 degrees, it is possible to generate a refractive index difference at the boundary interface in different regions of the polar direction, and to control the refraction and reflection of light. This cause is that if the anisotropy of the crystalline material can be symmetrically reversed at the interface, starting from the refractive index, the properties of the crystalline material can be changed with the interface as a boundary. . (Example 1) A KNb03 crystal belonging to an orthorhombic system will be described as an example. The room temperature midpoint group of KN b 0 3 crystal is mni2 ^ lattice constant = 0.5688πιώ, b = 0.3 9 7 1 nm, c = 0.5714, and the main refractive index at wavelength 63 3nm is na = 2.2801, nb = 2.3296, nc = 2.1687. The spontaneous off-axis is the c-axis. As shown in FIG. 18, the a-axis and the c-axis are formed at 45 degrees and cut out to form a rectangular shape perpendicular to the b-axis. For example, an electrode 30 -21-528877 is formed in the right half. 5. Description of the invention (2〇 ), 31. The crystals are cut out by the electrodes 30 and 31 toward the b axis in a direction perpendicular to the direction in which the electric field is applied. After an electric field is applied in this structure, the polar direction (c-axis) is centered on the easy-to-rotate axis (b-axis) of the polar axis, and the electric field component perpendicular to the c-axis is rotated by 90 degrees. With this arrangement, it is known that a 90-degree polar region can be formed. The element thus formed has the function of bonding two crystalline elements at the interface. That is, the crystal axes a and c in the left half form the crystal axes c and a in the right half, forming a mirror-like relationship. In addition, the same arrangement as shown in Fig. 19 can also form a 90 degree polar region. The shapes of the cuboids which were formed on the surfaces perpendicular to the crystal axes a, b, and c were cut out from the crystal. Electrodes 30 and 31 are formed on portions of the a-plane parallel to the c-axis and the b-axis, respectively. By applying an electric field in this manner, the axis of easy rotation (b-axis) of the spontaneous polar axis is used as the center, and the polar direction (c-axis) is rotated by 90 degrees using an electric field component perpendicular to the b-axis. Figure 20 is a perspective view of a polarized beam splitter made by crystallizing the polarized control KNb03. The plane 35 is a plane inclined by 45 degrees from the a-axis and the c-axis. The father's face 33 is used to form the b-plane of the crystalline element, and a cuboid-shaped crystalline element 32 is cut out from the crystal. The surface 33 forming the incident surface of light and the opposite surface 38 thereof are subjected to optical honing. In this crystal orientation, the spontaneous off-polar axis (c-axis) of the crystal is inclined by 45 degrees with respect to the X-axis. Electrode pairs 30 and 31 made of silver paste or metal are formed on the two facing surfaces 35 and 39, and an electric field is applied to the up and down direction, that is, between the electrodes 30 and 31. With this, only the b-axis of the area where the electric field is applied is taken as -22-528877 t. V. INTRODUCTION (21) The center of rotation is rotated 90 degrees to produce a flat 90-degree polar area 36. The He-Ne laser light L having a wavelength of 633 ππm, which is a laser light, is incident from the incident surface 33 at a certain angle α, and passes through a 90-degree polar region 36 for one polarized light (a direction orthogonal to the c-axis). Polarized light) produces total reflection. On the other hand, polarized light in the c-axis direction is transmitted. In this way, it can be known from the examples that the polarizing operation can be performed in a single crystal without the need to bond two optical materials with an adhesive, so that the polarized photons of polarized light or polarized light separated into two polarized components can be realized. Beam splitter. Although the above description mainly exemplifies the KNb03 crystal, of course, it can also be applied to KT i 0P04 crystal which is an orthorhombic crystal among biaxial crystals, BaTao3 crystal, RbTi0P04 crystal, and the like. In addition, although the description is limited to a single crystalline material, it is basically applicable to a material for epitaxial growth on a substrate. (Example 2) A KNb03 crystal belonging to an orthorhombic system will be described as an example. The room temperature midpoint group of KNb〇3 crystal is mm2, the lattice constant is a = 0 · 5688nm, b = 0.3971 nm, c = 0.5714, and the main refractive index system at a wavelength of 633 nm is 1 ^ = 2.280 (111) 2.3296, 11 (: = 2.1687. In the following, the coordinate system in Figure 9 is used for explanation. The initial spontaneous partial pole 2 1 is equivalent to the c-axis direction [1 / 1/0]. As shown in Figure 14C The crystal element 32 is cut out on a surface perpendicular to the direction [1/0 / — 1], and orthogonal to the directions [1/0 / — 1] and [-23-528877] V. Description of the invention (22)-1 The electrodes 30 and 31 are formed on the surface of / 0/1]. A silver paste is used for the electrodes 30 and 31, and the thickness of the crystalline element is set to 2 mm. The direction [1/0 /-1] is formed to form a positive electric field. The applied electric field is in a direction perpendicular to the direction in which the electric field is applied. Here, the actual time is observed from the plane perpendicular to the direction [0 /-1/1]. As a result, the electric field application port is 80V / In the case of mm or more, a wall corresponding to the (1/0 · 3/1) surface of the initial polar state is generated, and it is possible to confirm that the region is sandwiched between the electrodes 30 and 31 by continuously applying an electric field. After the electric field is applied, the electrodes 30 and 31 are removed and the surface shape at the boundary is observed. Figure 21 shows the surface of the (0/1/0) plane of the initial polar region 10 Sectional view. As shown in FIG. 21, it can be confirmed that the new polar region 20 has an inclination of about 1.7 degrees with respect to the initial polar region 10. For reasons described later, it can be confirmed that it has 1.7 degrees The tilted new polar region 20 is a 60-degree polar region. In addition, it is not observed at this time. The 90-degree polar direction, the 120-degree polar direction, and the 180-degree polar direction were measured. Here, for the surface shape The method of observing and confirming the polarization direction of the new polarization region 20 is described below. The following description is based on the coordinate axis of a quasi-cubic crystal like the one shown in Figure 9. Considering the 0 degree polarization region 1 0 of (0 / 1/0 ) Plane and the (1/0/0) plane in the 60-degree polar region 20. In the initial polar state, the coordinate axis of the 0-degree polar region 10 and the coordinate axis of the 60-degree polar region 20 form the first axis. The arrangement relationship shown in Figure 22A. Here, in the 0-degree polar region 10, the shape of the direction [-1 / 0 /-1] and the direction [1/0 / -1] After the angle is calculated by the lattice constant, the shape is -24-528877. V. Invention Description (23) is about 90.86 degrees. On the other hand, in the 60-degree polar region 20, the direction [0/1/1] and the direction [〇 / The formation angle of — 1/1] is the same as that of the 0-degree polar region 10, which is about 90.86 degrees. Therefore, the interface 15 of the 0-degree polar region 10 and the interface 15 of the 60-degree polar region 10 are formed as Continuous, and a structure as shown in FIG. 22B is obtained. Figures 23A to C are schematic diagrams showing a slight change in the surface shape. Figure 2 3 A does not show the state before the polar direction control, Figure 2 3 B shows the uncontrolled area and independent shape changes in the 60-degree polar region, and Figure 23C shows the polar direction State after control. Therefore, the plane perpendicular to the direction [1/0 /-1] of the surface of the 0 degree polar region 10 and the plane perpendicular to the direction [0 /-1/1] of the surface of the 60 degree polar region 20 It is calculated by the formula: 180 degrees-90.86 degrees-90.86 degrees 1.72 degrees to form an offset of about 1.7 degrees. This offset is consistent with the angle formed by the new polar region 20 and the initial polar region 10 made in this embodiment. It can be determined from the above that the new polar region 20 produced in this embodiment is a 60-degree polar region. The device manufactured as described above has the function of bonding two crystal devices to each other at the interface. That is, as shown in FIG. 17, after observing the refractive index ellipsoid on a surface perpendicular to the polar wall, the ellipsoid is tilted in a reverse direction with the boundary portion as a border. Fig. 24 is a perspective view of a configuration example of a polarized beam splitter made by crystallizing KNbO 3 by polarized polarization control. The crystalline element 3 2 is a cuboid cut from the crystal with a surface orthogonal to -25- 528877 V. Description of the invention (24) The direction [1 / 0.3 / 1] of the wall formation. The incident surface 33 and its facing surface 38 are optically honed. Electrode pairs 30 and 31 made of silver paste or metal are mounted on the two opposing surfaces 35 and 39, and an electric field is applied between the electrodes 30 and 31. At this time, only the region 20 to which an electric field is applied forms a 60-degree polar region. The He-Ne laser light L having a wavelength of 633 nm, which is a laser light, is incident at a certain angle α from the normal of the incident surface 33, and when it passes through the 60-degree polar region 20, it totally reflects one of the polarized light. On the other hand, polarized light that is perpendicular to the aforementioned polarized light is passed. In this way, it can be known from the examples that the polarizing operation can be performed in a single crystal without the need to bond two optical materials with an adhesive, so that the polarized photons of polarized light or polarized light separated into two polarized components can be realized. Beam splitter. Although the above description mainly exemplifies a 60-degree polar region, of course, it can also be applied to other polar regions having interfaces with different refractive indices, such as a 90-degree polar region and a 120-degree polar region. In addition, although the KNb03 crystal is mainly described as an example in the above description, it is of course applicable to KTi0P04 crystal, BaTao3 crystal, and RbTiOP04 crystal which are orthorhombic crystals in the biaxial crystal. In addition, although the description is limited to a single crystal material, it is basically applicable to a material for epitaxial growth on a substrate. In addition, the above-mentioned control element is used to describe various types of optical elements. For example, as shown in FIG. 25A, the crystalline element 32 is formed from KNb03 crystal, and a rectangular body is cut out in the direction of a-c45 degrees to form a main surface, and the incident surface is 50 -26- 528877. Perform optical honing. Secondly, the periodic electrode pairs 30 and 31 forming the b-axis direction on the long side of the main surface are installed by means such as metal deposition (deposit ion). An electric field is applied in a direction where the polarized direction between the electrodes 30 and 31 is a rotation. As a result, as shown in FIG. 25B, the spontaneous polarization direction of the region between the electrodes 30 and 31 is rotated 90 degrees with the b axis as the rotation center. Therefore, polar regions that form polar directions that are orthogonal to each other can be periodically produced. In Figs. 25A and B, the polar axis directions are indicated by arrows, and the refractive index ellipsoids are indicated by arrows. In this way, a crystalline element 32 in which the mutually polar axis systems are controlled to be 180 degrees apart (for example, formed at 90 degrees) periodically arranged in the region is produced, and a fold can be formed by injecting light obliquely from the regional boundary interface to form a fold. Sorgu type filter. This will be specifically described below. The state of the periodic 90-degree polar region seen from the direction of the entrance plane is shown in Fig. 26A. The polarized axes (c-axis is the direction of the arrow) of the two polarized regions 52 and 53 form an angle of 90 degrees with each other. The interface between the two polar regions 52 and 53 is formed in a direction of 45 degrees with respect to the two c-axes due to the crystal symmetry. Get the X-axis and y-axis at this interface and the parallel plane. The X-axis system takes a direction that coincides with the b-axis direction of the crystal. And obtain the z-axis in the direction perpendicular to the X-y plane, the propagation axis of the light L is in the z-X plane, and the angle 0 is taken as the incident angle. When the incident angle 0 is 0 degrees, the refractive index ellipsoids in each of the polar regions 52 and 53 are projected onto the incident surface 5 0, and the main axis system is formed with the X axis and y -27-528877. 5. Description of the invention ( 26) An ellipse whose axes are consistent, and whose major axis and minor axis length directions are also consistent. The filtering (f i 1 t e r i ng) characteristic cannot be obtained by shortening the projection of the incident surface 50 of the refractive index ellipsoid toward each of the polar regions 52 and 53. On the other hand, although p = ± 45 ° is formed by the horizontal incidence (0 = 90 degrees), no filtering function is found to be useful for forming the propagation in the crystal plate. The incident light is a substance that polarizes light in the y-axis direction passing through a polarized photon, and linearly polarizes light in the y-axis direction. The incident surface is a surface including the X-axis and the z-axis. After the incident angle 0 is inclined toward the X-axis direction, the refractive index ellipsoids of the respective polar regions 52 and 53 are put into the refractive index of the incident surface 50. The major axis of the ellipsoid is tilted to + P ° and-P ° respectively (refer to Figure 26B). At this time, the relationship between the incidence angle Θ and p is formed as ρ = θ / 2. Thus, the light system incident from the incident surface 60 at an incident angle 0 equivalently passes the birefringent plates rotated by + P ° and -P ° alternately. The emitted light is passed through a photon 54 which is orthogonal to the direction of the polarized photon. If this phenomenon is used, an optical filter can be realized because it has the same principle as the folded So rgu filter. In this way, it is possible to construct a birefringent plate as a monolithic without attaching two or more optical members, and it is possible to realize an optical filter with one crystal element without adjusting the optical axis. Fig. 27 is a perspective view showing the structure of an optical filter. As shown in FIG. 27, for the a-axis and the c-axis, 45 degrees are formed, and for the b-axis, a crystalline element 32 having a rectangular shape cut out from KNb03 crystals is formed vertically. (The axis of rotation of the polar axis is easy to rotate.) -28-28528877 V. Description of the invention (27) The electrode 30 is periodically formed with an electrode width of 1 00 // m and an electrode spacing of 1 00 // m. On the surface facing the formation surface of the electrode 30, the electrode 31 is formed on the entire surface. In this configuration, after a voltage is applied between the electrodes 30 and 31, the bias direction (c-axis) is centered on the easy-to-rotate axis (b-axis), and the electric field component perpendicular to the c-axis is used. Perform a 90-degree rotation. In this way, the polarizing direction can be rotated by 90 degrees only in the area between the electrodes 30 and 31. In addition, the calculation results of the fast-axis and s low-axis 値 incidence angles of the refractive index ellipsoid at this time (9 dependences are taken as an example of KNb03 crystals are shown in FIG. 28. The incidence angle is changed to 0. This is equivalent to changing the birefringence of the birefringent plates of each layer equivalently. In the case of an incident angle of 0, the angle P of the y axis of the principal axis direction of the refractive index ellipsoid seen is 0/2. Therefore, since the refractive index can be changed, the filtering characteristics can be adjusted. The light system enters the polarized light from the incident surface 50 in the y-axis direction. The incident angle is inclined by 0 degrees from the z-axis in the X-axis direction. Injecting. After filtering the light emitted from the exit surface through the photon 54 in the X-axis direction and observing the spectrum, the filtering characteristics are obtained. For example, the graphs shown in Figures 29A to C are the thickness in the 90-degree polar region In a filter constructed with 8 layers of 1,000, 1010, and 1 020 // m, the transmission spectrum at an incident angle of 0 = 10 degrees. From the graphs shown in Figures 29A to C, it can be seen that the period is In the long-term case, a narrowband domain wave receiver can be realized. In addition, the graphs shown in Figures 30 A to C are in In a filter with a thickness of 90 degrees and a polar layer of 6 layers of 100 // m, the transmission spectrum when the incident angle is 10 degrees, 12 degrees, and 14 degrees. -29-528877 V. Description of the invention (28) It can be known from the graphs shown in Figures 30A to C that when the incident angle is large, a filter characteristic with a wide band is formed. In this way, the loss of the filter is small. In the laser resonator, narrowband filters such as emission wavelength selection or wavelength selection in high-density wavelength multiplexed communication (DWDM) can be used. In addition, although the above description only discloses In the case of one cycle, however, arbitrary filtering characteristics can be obtained by combining a plurality of cycles. The perspective view of the structure of the laser beam multiplexer 56 shown in Figs. 31A to C. The laser beam multiplexer 56 is configured as Using potassium niobate (KNb03) crystal as a birefringent optical element, a 90-degree polar pole rotation operation is performed on a local area to form two regions 57 a and 57 b orthogonal to each other's spontaneous polar pole directions. The following is simple Explain the production of laser beam combiner 56 Method: As shown in Fig. 31A, a crystalline element 32 is cut out from potassium niobate crystals to form a rectangular body in which the a-axis and the c-axis are respectively 45 degrees and perpendicular to the b-axis. The cut-out crystalline elements 32 are Optical honing is performed to form a thickness of 4.0 mm. Electrodes 30 and 31 are mounted on the optically honed surfaces 35 and 39. By applying an electric field, only the region between the electrodes 30 and 31 can be polarized. Rotate 90 degrees (refer to Figure 31B). In addition, the electric field strength can be rotated 90 degrees at 100 V / mm. The polarization direction is controlled by the crystalline element 3 2 series. Interface fit function. That is, on the paper surface of Figures 3A to C, the left-half crystal axis a-30-30528877 is formed. 5. Description of the Invention (29) and c The right-half system forms the crystal axes c and a, and becomes A 90-degree rotation relationship with the b-axis as the center. After rotating the polarizing direction, the electrodes 3 0 and 31 are removed as shown in FIG. 31C. For the optical honing surface 35, the laser beam LA is incident from the surface 35a and the laser beam LB is incident from the surface 35b. Set as usual. The laser beams LA and LB are respectively deflected in the direction of travel at beam walk off angles of about 2.9 degrees. Therefore, after the propagation crystal length is 4.0 mm, it can approach approximately 40 0 // m. Thus, the output end face 39 of the birefringent crystal sandwiches the two beams LA, LB at the interface of the two regions 5 7a, 5 7b, and merges to a laser beam with a width of 200 // in. Thus, the crystal element 32 functions as a laser beam multiplexer 56. Next, a laser beam generating device using such a laser multiplexer 56 will be described. 32A and 32B are diagrams illustrating the first configuration example. The laser beam generating device 61 is provided with: a semiconductor laser array 62 having two light emitting areas 63a and 63b; and a cylindrical lens 64 which will, if necessary, send light from the light emitting areas 63a and 63b. The laser beams LA and LB are focused in the Z direction; the laser beam combiner 56. The laser beams LA and LB emitted from the semiconductor laser array 62 and passing through the cylindrical lens 64 are respectively blocked by the beams with the birefringence at areas 57a and 57b of the laser beam combiner 56. off) and the effect is approached, and merge is performed at the output end face 39. Here, although the cylindrical lens 64 is not necessary, it is preferable to have it. In addition, in order to guide the laser light -31-528877 emitted by the laser beam generating device 61, the invention (30) beam is guided to the light 60, and can also be provided on the exit side of the laser beam combiner 56. An axisymmetric lens 59 that focuses light in the X and Z directions. The semiconductor laser array 62, the cylindrical lens 64, and the laser beam combiner 56 are fixed on the same substrate. The semiconductor laser array 62 is formed by a stripe with a width of 50 / zm, a stripe interval of 500 // m, and a resonator length of 1 mm. Therefore, each of the light emitting regions 63 a and 63 b is formed by a single chip. The light-emitting regions 63a, 63b function as an independent semiconductor laser generator, and produce a large output laser beam with an output of about 1W under the release of lateral multimode. The laser beams LA and LB from the light emitting regions 63a and 63b show the intensity distribution of a large ellipse at an enlarged angle in the vertical Z direction for an active layer formed in parallel to the X-Y plane, for example, Z The angle of enlargement in the direction 0z = 34 °, and the angle of enlargement in the X direction 0χ = 10 °. The active layer is a substance formed on the semiconductor laser array 62. In addition, the laser beams LA and LB emitted from the light emitting regions 63 a and 63 b are linearly polarized in the same direction, and their polarizing planes are parallel to the active layer. The cylindrical mirror 6 4 ′ has: a light entrance surface formed on a cylinder surface having a generatrix parallel to the X direction; a flat light exit surface that emits a laser beam LA from the light emitting areas 63a, 6 3b LB performs parallel correction (co 1 1 imate) only in the Z direction, and does not perform parallel correction in the X direction. In this way, by arranging the cylindrical lens 64 behind the semiconductor laser array 62 and using it as the axis-target lens 59 of the condenser lens, the fiber coupling efficiency is improved. As the cylindrical lens 64, for example, a fused silica having a radius of curvature of the light incident surface of -32- may be used. Fifth, the description of the invention (31) 500 // m, the number of openings (NA) 0.4, and the center thickness of 0.5_ The formed cylindrical lens may also be a cylindrical lens-like fiber lens with a refractive index distribution core, such as a doric lens (trade name) (made by Doric Corporation, USA). The optical fiber 60 is composed of, for example, a core 60a having a diameter of 60 ν m and a covering 60b covering the core 60a. The light incident end surface of the optical fiber 60 is arranged at the light-condensing position of the axis-target lens 59 as a condenser lens. With this, even in the orthogonal direction, the laser beams with different enlarged angles can be used to realize small spot light metering (spot) at the condensing position, and the optical fiber of the optical system in the subsequent stage can be improved. 60 combined efficiency. In addition,:. · In this structure, there is no need to use a polarizing rotation element, which simplifies assembly. *. Adjustments to improve reliability or productivity. Figures 33A and B are schematic diagrams of a second configuration example. Figure 33A is a top view and Figure 33B is a side view. In Figs. 33A and B, an example in which two laser beams LA and LB are merged is illustrated. However, a second configuration example is an example in which four laser beams LA, LB, LC, and LD are merged. It has: a semiconductor laser array 62, which has four light emitting areas 63a, 63b, 63c, 63d; a cylindrical lens 64, which corrects the light emitted from the semiconductor laser array 62 in the Z direction in parallel; the first laser The beam multiplexer 56 a and the second laser beam multiplexer 56 b are formed by a birefringent optical element that combines laser light that has passed through the cylindrical lens 64 by a birefringence effect. In addition, an axisymmetric lens 59 can also be provided, which is used by Ray-33-528877 as the birefringent optical element The light is focused in the X and Z directions; and the optical fiber 60 is incident on the collected light. The semiconductor laser array 62, the cylindrical lens 64, the laser beam combiners 56a, 56b having two birefringent optical elements, and the axial object lens 59 as a condenser lens are fixed on the same substrate. The semiconductor laser array 6 2 is formed in a single wafer, and most of the light emitting regions 6 3 a to 6 3 d are formed with a stripe width of 1 0 0 // m, a stripe interval of 50 0 / zm, and a resonator length of 2 mm. Therefore, each of the light emitting regions 63a ~ 63d functions as an independent semiconductor laser generator, with the release of lateral multi-mode, each output is 2W, and 4 large output laser beams called 8W . The laser beams LA to LD from the semiconductor laser array 62 show a large elliptical intensity distribution for an active layer formed parallel to the X-Y plane at an enlarged angle in the vertical Z direction, for example, Z The angle of enlargement in the direction 0z = 34 °, and the angle of enlargement in the X direction 0χ = 10 °. In addition, the laser beams LA to LD emitted from the light emitting regions 63 a to 63 d are the same linearly polarized light, and the polarization planes thereof are formed in parallel with the active layer. The laser beams LA to LD from the light emitting regions 63a to 63d are aligned in a vertical direction in the active layer by a cylindrical lens 64. The laser beam multiplexing 56a series is formed by cutting out the KNb03 crystals in the same orientation as shown in Figures 31A ~ C, periodically forming electrodes at a distance of 1mm, and forming 90-degree depolarized regions into 4 places. , And the adjacent polar regions form four polar regions 57a to 57d at 90 ° to each other. The polar regions 57a and 57c and the polar regions 5 7 b and 5 7 d have the same polar directions, respectively.

-34- 528877 V. Description of the Invention (33) The laser beams LA and LB are close to each other through beam walk off effects when they pass through 90-degree polar regions 57a and 57b, respectively. In addition, the laser beams LC and LD are close to each other by the beam blocking effect when they pass through the 90-degree polar regions 57c and 57d, respectively. After the laser light: beam multiplexer 56a, the laser beams LA and LB are merged to form a laser beam LE, and the laser beams LC and LD are merged to form LF, which are respectively injected into the next laser beam to be multiplexed器 56b. The laser beam multiplexer 56b is formed in the same manner as shown in Figs. 31A to 31C in two KNbO3 crystals with a length of 8 mm to form two 90-degree polarized inversion regions 56e and 56f. The laser beams LE and LF that have entered the laser beam multiplexer 56b are brought closer to each other by the beam blocking effect, and can be merged on the exit surface. This combined laser beam is emitted from the laser beam combiner 56b, and is combined in a multi-mode optical fiber 60 with a core diameter 値 100 # m by a condenser lens 59. Thereby, 6W of the output of the 8W semiconductor laser array 62 can be combined. 34A and 34B are schematic diagrams of a third configuration example. Figure 34A is a top view and Figure 34B is a side view. The same structures as those in the second configuration example are given the same reference numerals, and detailed descriptions are omitted. The laser beams LA to LD from the light emitting regions 63a to 63d of the semiconductor laser array 62 are corrected in parallel by a cylindrical lens 64. The laser beams L A and LB shift the beam position in the vertical direction in the active layer by the inclined glass substrate 58. Such laser beams LA and LB are more -35- 528877 V. Description of the invention (34) The laser beam enters and enters the horizontally disposed glass substrate 65. On the other hand, the laser beams LC and LD which have not passed through the inclined glass substrate 58 are incident on the birefringent crystal element 66 having a length of 10 mm. The birefringent crystal element 66 is made of YV04 crystal, and the laser beams LC and LD travel obliquely with a beam blocking effect of about 5.8 °. The laser beams LC and LD are 'the output end of the birefringent crystal element 66 is shifted by about 1 mm in the X-axis direction, and coincides with the positions of the advanced laser beams LA, LB, and the X-axis direction. However, it is only slightly offset in the z direction. The laser beams LA, LB, LC, and LD thus paired are incident on the next laser beam combiner 56c. The laser beam combiner 56c is formed of KNb03 crystals having two different polar regions, and has the same structure as the crystal element 32 shown in Figs. 31A to C. The laser beams LA and LC pass through the polarized region 57e of the laser beam multiplexer 56c, and the laser beams LB and LD pass through the polarized region 57f of the laser beam multiplexer 56c. The polar axis directions of the polar regions 57e and 57f are at an angle of 90 degrees to each other. Therefore, the laser beams LE and LF passing through the polar regions 57e and 57f, respectively, approach each other through the beam blocking effect. . The laser beam emitted from the laser beam multiplexer 56c is incident on the multi-model light beam 60 by increasing the efficiency of the multi-model light beam 60 by using the axisymmetric lens 59 as a condenser lens. Thereby, 6W of the output of the semiconductor laser array 62 which outputs 8W can be combined. 35A and 35B are schematic diagrams of a fourth configuration example. Figure 35A is -36- V. Description of the invention (35) Top view, Figure 3 5 B is a side view. The laser beams LA to LD from the light emitting regions 63 a to 63 d of the semiconductor laser array 62 are corrected in parallel by a cylindrical lens 64. The laser beams LA and LB and the laser beam LC ′ LD that has not passed through the inclined glass substrate 58 are incident on a laser beam multiplexer 56 6d having a length of 5 mm. The laser beam combiner 56d is formed by superposing two birefringent crystal elements 67 and 68. The birefringent crystal elements 67 and 68 are composed of YV04 crystals, and a beam blocking effect of about 5 · 8 ° causes them to form opposite directions and overlap each other. The laser beams LC and LD are shifted by the output end of the laser beam multiplexer 56d in the + X-axis direction by about 500 // m by the birefringence effect. In addition, the laser beams LA and LB are at — The X-axis direction is offset by about 500 / zm. Therefore, at the output end, the laser beams LA and LC and the laser beams LB and LD respectively overlap the positions in the X direction. However, the laser beams LA and LB have passed through the obliquely inserted glass substrate 58, so they are only slightly shifted in the z direction. The laser beams LA, LC, and LB and LD are incident to the next Laser beam combiner 56c. The laser beam combiner 56c is formed by a KNb03 crystal with a length of 4 mm, which has polar regions 57e and 57f with different polar directions. It is the same as the crystalline element 32 shown in Figures 31 A to C. 90 degree polar area. The laser beam emitted from the laser beam multiplexer 56c is incident on the multi-model light beam 60 by increasing the efficiency of the multi-model light beam 60 by using the axisymmetric lens 59 as a condenser lens. In this way, it is possible to combine 6W of the output of the semiconductor laser array 62 which outputs 8W. -37- 528877 V. Description of the invention (36) With the above structure, the laser beams from two or more light emitting regions are combined into one laser beam, which can improve the efficiency of the optical fiber and combine them. Exceptionally, in the beam confluence, by using a laser beam combiner 56 formed by a birefringent crystal element having a 90-degree polar region, the confluence of laser light can be achieved by using less than the conventional number of components. In addition, in the above configuration example, an example of combining laser beams from a semiconductor laser array 62 having four light emitting regions 63 a to 63 d is described. However, as a matter of course, this case will be described by way of example. The concept is further carried out in multiple stages, and can also be extended to beam combining from a multi-model semiconductor laser array having more than five light emitting regions 63. Moreover, not only the multiplexing of laser beams from semiconductor laser arrays, but also the combination of individual independent laser beams, such as solid laser beams, semiconductor laser beams, gas laser beams, etc. The wave. These laser beam generating devices are light sources with high output excitation that can use an erbium-doped fiber amplifier (EDF A; Erbium-Doped Fiber Amplifier) or fiber laser. In the present invention, the structure of the optical waveguide can be obtained by not using the chemical change so far, but by using a new thinking that changes the above-mentioned polar structure to a physical change. The structure of the optical waveguide of the present invention is disclosed in FIGS. 36A to C. FIG. 36A is a schematic view showing the shape and appearance of the high-dielectric substrate 70 before the optical waveguide is manufactured. The + c direction of the crystal axis is the polar direction, and the directions of the crystal axes a, b, and c before the fabrication are taken as the X, y, and z coordinates, respectively. Fig. 36B shows the polarized structure of the high-dielectric substrate 70 after the optical waveguide is manufactured. -38- 528877 V. Description of the invention (37) In the figure, the polarized direction (+ c-axis direction) of the optical waveguide region 71 and the 90-degree polarized region 72 (+ c-axis direction) form 90 degrees with each other. The polar direction (+ c-axis direction) of the optical waveguide region 71 can be set anywhere in the z direction in the coordinates, and the polar direction (+ c-axis direction) of the 90-degree polar region 72 can be set in soil. Anywhere in the x direction. In this case, the propagation direction of light in the optical waveguide is formed in the y-direction (b-axis direction) of the coordinate axis. Herein, the case of light propagation is considered in the y direction (b-axis direction). In this structure, the relationship between the refractive index ellipsoid in the y-plane (b-axis cross-section) of the optical waveguide region 71 and the 90-degree polar region 72 is disclosed in Fig. 36C. As shown in FIG. 36C, the refractive index of the optical waveguide region 71 is higher than the refractive index of the 90-degree polar region 72 for the X direction of the coordinates in the 90-degree polar region 72 and the optical waveguide region 71. Therefore, by adding a polarized wave in the X direction of the coordinates, the light can be turned off, and the optical waveguide region 71 can be used as the optical waveguide. In this way, in the polarization direction, the refractive index of the optical waveguide region 71 can be obtained in a direction greater than 90 degrees in the polarization region 72, thereby having a significant waveguide function for deflection. In addition, the polarization direction of the optical waveguide region 7 1 can be set to any position in the ± z direction of the coordinates. From this point on, it is possible to fabricate a finely polarized structure such as a periodic polarized inversion structure in the optical waveguide region 71. Continuing, a manufacturing method for a new optical waveguide structure using the above-mentioned 90-degree polar region 72 will be described below. A schematic diagram of a linear enlargement pattern of a manufacturing process, which is an example of the optical waveguide construction method of the present invention, is shown in FIG. 37. As shown in Figure 37, the present invention is an optical waveguide structure-39-528877. 5. Description of the invention (38) The method is to form the + Z direction of the coordinates in the polar direction (+ C axis direction). The predetermined optical waveguide structure is formed on a high-dielectric substrate 70 having a single-domain polarized structure. The first and second electrodes 73 and 74 are arranged on the substrate 70, and the pattern is formed on the substrate 70. On at least one of the first or second electrodes 73 and 74, between the first and second electrodes 73 and 74, a negative electrode is formed on the negative side of the polarized direction (+ c-axis direction) of the substrate 70, and a positive electrode is formed. A fabrication circuit is formed like a positive electrode on the side, and an optical field structure is produced by applying an electric field between the first electrode 73 and the second electrode 74. The electrode pattern is formed on either or both of the first or second electrodes 73 and 74. The electrode pattern 75 used to form the optical waveguide can also be any shape of a straight line, a curve, an obtuse angle, or an acute angle. However, for better accuracy, a 90-degree polar region 72 forming an optical waveguide can be produced. As shown in FIG. 38A, it is preferable to have a straight portion and a right angle, such as a linear shape, a grid shape, and a rectangular shape that are parallel to the y direction (the direction of light propagation in the b axis direction) and perpendicular to the z direction. The relationship between the first and second electrodes 73 and 74 of the electrode pattern 75 used to form the optical waveguide is as shown in any example in FIG. 38B, regardless of whether the single piece is a full-surface electrode or both sides. The same pattern can be formed, and the pattern can be made by staggering the patterns on both sides. The shape of the electrode of the present invention does not affect its material if there is a patterned electrode. For example, photolithography is used in pattern production, and the upper part has: metal electrodes such as Al and Au produced by a lift off method, and periodic production by a yellow light process- 40-528877 V. Description of the invention (39) Photoresist and other insulating layers 76 (refer to Figure 37), liquid electrodes using UC1, KC1 and other electrolytes as electrodes, and combining these photoresist and Electrodes made from two types of metal electrodes. Next, the simultaneous manufacturing method of the new optical waveguide structure using the above-mentioned 90-degree polarized region 72 and the fine polarized structure such as the periodic polarized inversion structure of the 180-degree polarized region is described below. The structure shown in Fig. 39A is a combination of the new optical waveguide structure of the above-mentioned 90-degree polarized region 72 and the finely polarized structure such as the periodic polarized inversion structure through the 180-degree polarized region. As shown in Fig. 39A, the above-mentioned structure has an optical waveguide region 71 surrounded by a 90-degree polar region 72. Furthermore, as shown in FIG. 39B, the inside of the optical waveguide region 71 is such that the region 77 facing the + z direction and the region 78 facing the z direction are periodically aligned to form a fine polar structure 79. After the light is propagated in the y direction in the optical waveguide region 71 of the structure shown in FIG. 39A, the 180-degree polar structure can be used to function as a micro polar structure 7 9 with periodic polar inversion and the like. Optical waveguide function. Next, a brief linear expansion pattern diagram of an exemplary manufacturing procedure of the simultaneous manufacturing method of the fine polarization structure 79 such as the periodic polarization reversal of the present invention and the optical waveguide structure as disclosed in FIGS. 37 and 7 will be described. As shown in FIG. 37, the present invention is a high-dielectric substrate 70 having a single-domain depolarized unipolarized polarized direction (+ c-axis direction) in the + z direction of the coordinates. In the simultaneous fabrication method of the polarized single-polarized polarized structure and the optical waveguide structure of the predetermined polarized structure, the first and second electrodes 73 and 74 are arranged on the substrate 70, and the pattern is formed on the first substrate. Or the second electrode -41-528877 r 5. Description of the invention (4〇) 73, 74 on at least one of the electrodes, between the first and second electrodes 73, 74 to bias the substrate 7 0 polar direction (+ c Axis direction) forming a negative electrode on the negative side and forming a positive electrode on the positive side. By applying an electric field between the first electrode 73 and the second electrode 74, a polarized inversion structure and an optical waveguide are produced at the same time. structure. The electrode pattern is either one or both of the first or second electrodes 73 and 74 shown in FIG. 37. In the present invention, the electrode pattern 75 used to form the optical waveguide can be any shape of a straight line, a curve, an obtuse angle, or an acute angle. However, for accuracy, a 90-degree polar region forming the optical waveguide is formed. 72. For example, as shown in FIG. 40A, a straight shape, a grid shape, a rectangular shape, and the like having a straight line, a rectangular shape, and a side that are parallel to the y direction (the direction of light propagation in the b-axis direction) and perpendicular to the X direction are good. The relationship between the first and second electrodes 73 and 74 of the electrode pattern 31 used to form the optical waveguide is as shown in FIG. 40B. Whether the single chip is a full-surface electrode or the same is formed on both sides. The situation of the pattern can be made by staggering the patterns on both sides. In the present invention, the electrode pattern 80 used to make a finely polarized structure 79 such as a period reversal can be any shape of a straight line, a curve, an obtuse angle, or an acute angle. However, for the sake of accuracy, it is formed. It is a 180-degree polar-polar structure region of a polar-polar structure. For example, as shown in FIG. 40A, it has a linear shape, a grid shape, which is parallel to the y direction (the direction of light propagation in the b-axis direction) and perpendicular to the X direction. Those having a straight portion and a right angle, such as a rectangular shape, are preferred. In the present invention, the relationship between the first and second electrodes 73 and 74 of the electrode pattern 80 used to make the finely polarized structure 79 such as the period reversal is as shown in Figure 40C-42-528877. V. Description of the invention (41 As shown in), either the case where the single piece is an entire surface electrode, or the case where the same pattern is formed on both sides, or the case where the patterns on both sides are staggered, can be used. The shape of the electrode of the present invention does not affect its material if there is a patterned electrode. For example, photolithography is used in pattern production, and the upper part of the photolithography includes metal electrodes such as Al and Alm produced by a lift-off method, and is periodically produced by a yellow light process. Insulating layer 76 such as photoresist (refer to FIG. 37), liquid electrode using electrolyte such as Li Cl, KC1 as an electrode, and electrode made by combining two types of photoresist and metal electrode . In addition, the above-mentioned pattern electrode can be produced on either one of the first or second electrodes 73 and 74, or can be produced on both sides. The optical waveguide structure can be produced by the above-mentioned manufacturing method of the optical waveguide structure. In addition, by using the simultaneous fabrication method of the fine polarization structure and the optical waveguide structure such as the periodic polarization structure of the present invention, the fine polarization structure and the optical waveguide structure such as the periodic polarization structure can be produced simultaneously. This does not require any means such as ion implantation, so it does not cause damage to the crystal. This phenomenon is revealed as follows. In Figure 37, the patterned electrode is made on the first electrode 73 of the substrate 70. Since the polar direction (+ c-axis direction) needs to be reversed from the + z direction of the coordinates to a z direction, the necessary electric field is applied. Between the first electrode 73 and the second electrode 74. As a result, it was surprisingly found that, in addition to the area with a polarized direction (+ c-axis direction) in the z-axis direction of the coordinates, the area with a polarized direction (+ c-axis direction) in the ± x-axis direction, That is, the y-axis is parallel to the same structure as shown in Figure 36B, and the z-plane will hold -43-528877. V. Description of the invention (42) ± 4 5 ° slant plane plate-shaped 90-degree polar region It has been confirmed that 72 has a structure that forms an optical waveguide. Furthermore, when the substrate 70 was engraved with fluorine oxide for 10 minutes, it has been confirmed that the polarization direction (+ c-axis direction) of the optical waveguide region 71 has the z-axis direction of the soil. It has a 180-degree pole-polar structure, and a system corresponding to the pattern electrode coexists as a pole-polar structure. This is considered for the following reasons. In the substrate 70, when an electric field more than necessary is applied to invert the polar direction (+ c-axis direction) by 180 degrees, the inclination component of the electric field is greater than that necessary to rotate the polar direction (+ c-axis direction) by 90 degrees. Electric field, therefore, it is possible to create a 90-degree polarized region other than the 180-degree polarized region. Under this thinking, it is possible to produce a light-guided wave path structure, and simultaneously to produce a finely polarized structure such as a periodic polarization reversal and an optical waveguide structure. As described above, by applying an electric field parallel to the polarization direction (+ c-axis direction), it is possible to manufacture an optical waveguide structure having a 90-degree polarization structure. In addition, from the above, it can be known that by using an electrode with a fine pattern, and by applying an electric field parallel to the polar direction (+ c-axis direction), it can be produced at the same time. A slightly polarized structure 79, such as a periodic polarized structure, and a 90-degree polarized light guide structure. As another configuration example, a potassium niobate (KNb03) crystal, which is a high-dielectric substrate 70, can be used, cut at a position perpendicular to the polar direction (+ c-axis direction), and used on the unilateral principal surface of the polar Coated with photoresist as an insulating layer -44- 528877 V. Description of the Invention (43) 76, and the yellow pattern is used to make the pattern and the LiCla saturated water-soluble first electrode 7 3, and only The saturated aqueous solution of L i C1 is configured to be in contact with the second electrode 74 of the substrate 70. In this example, since the light propagation direction is the y-direction (b-axis direction) of the coordinates, as shown in Fig. 39C, the electrode pattern of the finely polarized structure 79 such as the periodic polarized inversion will be used. The 80 configuration is perpendicular to the y direction and parallel to the X direction, and the electrode pattern 75 used to form the optical waveguide is configured to be perpendicular to the X direction and parallel to the y direction. Set the electrode width to 10 # m and the electrode interval to 1 00 // m. The opposing electrode is used as a full-face electrode. In this example, the electrode pattern 80 used to make a slightly polarized structure such as the periodic polarization reversal, the electrode portion width of the electrode pattern 80 is 15 # m, and the width of the 76 portion of the insulating layer formed by the photoresist is 1 5 // m, combined to form a period of 3 0 // m. In this example, the substrate is sandwiched between a polypropylene plate and a substrate through a silicone rubber, and a saturated aqueous solution of L i C 1 is filled between the acrylic plate and the substrate. During filling, it is adjusted to prevent air bubbles from remaining on the surface of the substrate by performing a degassing treatment. Next, by applying an electric field between the substrates by using a power source, as shown in FIG. 39A, a finely polarized structure 79 such as a periodic polarized structure with a 180-degree polarized structure and a 90-degree polarized structure are produced simultaneously. Structure of the light guide wave. In this case, the thickness of the substrate 70 is set to 1 mm, the thickness of the photoresist is set to 8 // m, the first electrode 73 is formed to a positive potential, and the second electrode 74 is formed to a negative potential. The electric field is about 50ms, about -45- 528877 t η V. Description of the invention (44) 3 5 OV / mm electric field is about 9ms, 400V / mm electric field is about 5mm Three methods of applying the electric field try the above structure Of production. An example of the results is shown in FIG. 41. Figure 41 is an optical micrograph taken from the y-plane (b-axis section). As shown in the photo in FIG. 41, no matter which application method is used, the light guide region 71 of the polarized region 72 at 90 degrees can be produced as shown in FIG. 36C. Although the jagged black parts along the upper end of the substrate can be seen, this is a gap caused when the section is cut. Although the width of the 90-degree polar region 72 is quite narrow (< 1 // Hi), it can be seen that the refractive index difference is quite large, so it is quite sufficient in blocking light. Furthermore, the formed substrate 70 was etched with fluorine oxide for 10 minutes, and it was confirmed that the formation status of the fine polarized structure 79 such as the periodic polarized inversion structure with a 180 degree polarized structure was confirmed. An example of the results is shown in Figure 42. FIG. 42 is a surface that is perpendicular to the z-axis of the coordinates, that is, an optical micrograph after the surface having the first electrode 73 is etched. The black-and-white pattern parallel to the X-axis direction is that each black region 78 is a region holding a polar direction in the ζ direction, and the white region 77 is a region holding a polar direction in the + ζ direction. What is more, the linear stripes parallel to the y-axis direction are the portions where the 90-degree polar regions 72 appear on the surface, and the optical waveguides can be formed between the 90-degree polar regions 72. As shown in Fig. 42, in the optical waveguide region 7 1 sandwiched by the 90-degree polar region 72, the fine polar structure 79 can be perfectly formed. As shown in the photo in FIG. 42, no matter which method of applying force D, it can be produced in the optical waveguide region 71-46-528877 r as shown in FIG. 39A. 5. In the description of the invention (45), the cycle 30 // m 180-degree polar pole structure Makes the periodic polar pole reverse structure. From the above results, by using the electric field application method, a light guide wave structure using a 90-degree polarized structure can be produced. Furthermore, a light guide wave structure using a 90-degree polarized structure and a period with a 180-degree polarized structure can be produced simultaneously. A slightly polarized structure such as a polarized inversion structure. With the present invention, the optical waveguide system can be provided not only on the surface of the substrate but also inside the substrate. Four electrode patterns are formed to form the polar reversal region, and the polar pattern is processed, and as shown in FIG. 43, the four sides are enclosed in the 90-degree polar region 72 in the substrate 70 formed by the crystal. An optical waveguide region 71 is formed. In the present invention, a triangular or trapezoidal polar region can be formed by forming a polar region other than 180 degrees, for example, a 90 degree polar region in a high-dielectric substrate, and a large electric optical constant can be used. r42. Take the crystal of potassium niobate (KNb03), which belongs to the orthorhombic system, as an example. The room temperature midpoint group of the KNb03 crystal is mm2 ', and the lattice constant is a = 5.688nm, b = 3.971nm, c = 5.714, and the main refractive index at a wavelength of 633nm is na = 2.2801, nb = 2.3296, nc = 2.1687. The electro-optical constants are r33 = 6 0 pm/V, rl5 = 160 pm / V, and r42 = 38 0 pm / V. As the electro-optical crystals, it is known that the electro-optical constants of lithium niobate (LiNb03) crystals are r33. = 30 · 8 pm / V. In contrast, the crystal system of potassium niobate (KNb03) has a high constant of 1 unit or more. Generally, a light deflector (optical -47- 528877 r gas) using an electro-optical effect is used. V. The invention description (46) deflector uses the diagonal term of r33. In the case of KNb03 crystals, various efforts must be made in order to use such large constants of r 1 5 or r 42. A case where the maximum constant r42 is used as an example will be described. r 42 means that when an electric field is applied to the b-axis direction, it means that the refractive index of polarized light in the b-c plane changes. In using r42, the electric field must be applied to the b-axis direction. Figures 44 and 45 show the relationship between the electric field direction of r42 and the axis of travel of light. The X-axis system is set as the travel direction of light, and 0 is the travel angle from the b-axis direction to the c-axis direction. Fig. 44 is a case where the electric field Eb is only in the b-axis direction, and the traveling direction of the light L is 0 from the b-axis to the c-axis. Fig. 45 is a diagram for arranging the electric field direction E at a right angle. When the light L travels in the direction, there are electric fields of the c-axis component and the b-axis component. Now, as shown in FIG. 44, the refractive index change Δ n e when only the electric field component Eb (V / cm) in the b-axis direction is applied between the two electrodes 30 and 31 can be calculated by the following formula. The system is formed as: △ neE (1/2) r42Ebn43Sin20 ... (5) n4 three 1 / (Sin20 / nB2 + Cos20 / nC2) 1/2 Here, 'nB and nC are the refractive indices in the b and c axis, nb = 2.3296, nc 2: 2.1 6 8 7. When the electric field direction is only the b-axis direction, the refractive index change when the voltage E = 1KV / mm is applied is calculated, and then a curve 5 as shown in FIG. 4 is formed. On the other hand, as shown in Figure 4-5, the electrode direction is not adopted for the line of light -48- 528877 V. Description of the invention (47) When the forward direction is arranged at a right angle, the electric field direction is caused by the two components Ec and Eb It is a little complicated, but 'the detailed calculation of the voltage E =

1 KV / _ After the refractive index changes at the force opening, curve 6 is formed as shown in Figure 46. When the direction of light travel is perpendicular to the direction of the electric field, some changes in refractive index can be reduced. In the case of the curve 5 in FIG. 46, the maximum angle of Δnes1000.11 is formed with the incident angle Θ = 45 degrees. It can be seen that compared with LiNb03 crystals (Δηε = 0.00016, lKV / mm), it can produce extremely high refraction. Change in rate. Therefore, it can be seen that the deflection angle also increases in proportion to this.

Next, a method for forming such a triangular range will be described. As shown in Fig. 47, the A side of the KNb03 crystal was used as the main surface, and the b and a axis directions were taken as the rectangular direction and the c axis direction was taken as the long side direction. Opposite two faces 33 and 34 are optically honed as the light incident and outgoing faces. The electrode 30 is mounted on the entire surface of the A surface, and the electrode 31 is periodically mounted in a line shape in the direction of the facing surface. When an electric field is applied between the electrodes on the opposite side, a 90-degree partial pole rotation occurs. At this time, the boundary interface of the polar region is generated in a half-angle direction that is parallel to the b-axis and forms two spontaneous polar angles (90 degrees). That is, as shown in Fig. 47, the formation is generated in a horizontal direction of 45 degrees. In this way, trapezoidal or triangular areas can be formed. Furthermore, the electrode of the inversion crystal element produced in this way was removed, and the entire surface was formed on the two surfaces of the b-axis protrusion opposite to the electrode. This makes it possible to generate a refractive index difference by applying a voltage to the b-axis direction.

The structure of the actual light deflector manufactured in this way is disclosed in 48A, B -49- 528877 s V. Description of the invention (48) Figure. Figure 48A is a top view; Figure 48B is a side view. The optical axis 81 is formed in the b-c plane of the polar region 82 by 45 degrees from the c-axis to the b-axis direction. The electric field has only components in the b-axis direction. At this time, when the polarized light is incident in the b-axis direction, it is deflected to the X-axis direction by passing through the boundaries 83 a and 83 b. In fact, since the deflection angle is further increased, it is possible to produce N polarized regions having a triangular shape as shown in FIG. 49 in the crystal. At this time, the deflection angle is formed N times. On the other hand, as shown in Fig. 50, when the traveling direction of light and the direction of the electric field are arranged orthogonally, the boundary interface of the triangular polar region is inclined to the electrode surface. That is, the optical axis 81 is a direction in which the b-axis and the c-axis of the polar region 84 are inclined by 55 degrees from the b-axis. After the crystal orientation is cut out in this manner, the electrodes 30 and 31 are formed on both sides of the b-axis object. By applying an electric field, the deflection direction of the light in the X-axis direction can be changed to a degree of Δ 0 s. The dependence of the electric field strength of the deflection angle in the case where the triangular polar regions are arranged in five in the arrangement shown in FIG. 50 is shown in FIG. 51. A deflection angle of about 1 degree can be obtained by 500V / mm, and a larger deflection angle can be obtained by a voltage lower than the conventional one. In the above description, although the description is limited to the beam deflection in the one-dimensional direction, the two directions of the X direction and the z direction which are perpendicular to a cross section orthogonal to the traveling direction of the light beam are described by making The above-mentioned deflection element for beam processing and the above-mentioned deflection element for processing in the y direction can perform -50 to 528877 in both X and y directions through a beam. In general, in terms of polarization control, the mode is controlled by combining the light modes of two orthogonal polarization directions and performing mode conversion. Therefore, it is important to satisfy the following two conditions. First, the first condition is that the combination must be made in a polarization mode with two orthogonal polarizations. The second condition is that the two orthogonal polarization modes generated by the combination must be propagated at the same propagation speed, in other words, the phase integration condition must be satisfied. In terms of satisfying the first condition, the off-diagonal term of the electromechanical coupling constant r i j (i > 3) must be used. The KNb03 crystal system satisfies the first condition because two non-diagonal terms of r51 = 105pm / V and r 42 = 38 0 pm/V can be used. A case where such large r42 is used in KNb03 crystals will be explained. As shown in Fig. 52, it is assumed that a crystalline substrate is formed in which the polarizing directions between adjacent regions are 90 degrees, and the regions R1 and R2 are periodically side by side. The crystal orientation is that the b-axis is consistent with the y-axis of the laboratory coordinates, and the propagation axis z is formed in a 45-degree direction between the a and c axes. With respect to the regions R1 and R2, the angle of the polarized directions forming each other is 90 degrees. In such a crystal device, opposing electrodes 30 and 3 1 are formed on the b-axis surface, and a polarization state can be controlled by applying an electric field to the b-axis direction. This will be described in detail below. The refractive index ellipsoid projected onto the y-X section of the KNb03 crystal region R1 is shown in Figure 53A, and the refractive index ellipsoid in the region R2 is shown in Figure 528877. V. Description of the Invention (so) Figure 53B. When no electric field is applied, the major axis of the refractive index ellipsoid is consistent with the y and x axes. When an electric field is applied to the y-axis direction in this state ′ After the electric field Ey is applied, the principal axis direction of the refractive index ellipsoid of the crystal substrate formed by the electro-optical effect is rotated in the y-X plane. Each < 9 r of this rotation is paid by the following formula. Figure 5 3A shows the above-mentioned rotation roughly. This 0 r is calculated by the following formula. 0 r = ArcTan [2Xr42XEx / (nc · 2-nb · 2)] / 2 ...... (1) That is, the principal axis of the refractive index ellipsoid is rotated by applying the electric field Ey, thereby forming a bond The polarization plane is orthogonal (that is, the y-axis direction and the z-axis direction) 2 light waves. This coupling coefficient / c is approximately expressed by the following formula: ° / c = (7Γ / λ) X η3 X r42 X Ey ...... (2) Here, l is the propagation beam wavelength. In the region R1 and the region R2, since the crystal axes of the two are reversed by 90 degrees, the rotation direction of the main axis by the application of the electric field is opposite, and the X axis of the main axis is added together by this rotation. direction. The energy migration rate of two polarized light beams 7? Is: 7? = Sin2 {(| / c | 2 + Δ2) l / 2XL} / {1+ (A2 // c2)} ····· (3) Δ = 7Γ (no- ne) / λ ...... (4) Based on formulas (3) and (4), in the wavelength person, if no and ne are equal, 100% energy migration is performed. At this time, the complete binding length L p is formed as: -52- 528877 References, V. Description of the invention (51) Lp = 7Γ / (2 | / c |) ...... (5) After propagating its length This results in a complete mode transition. For example, when the incident light beam is linearly polarized light having a polarization surface in the z direction, the linearly polarized light of the polarization surface in the z direction is emitted as it is without an electric field Ey. Under normal light and abnormal light, the phase velocity equivalent condition (no = ne) is the second condition, and it is called the phase integration condition. In the case of potassium niobate crystals, although it is preferable to use r42 having a large constant, the use of r42 in the first condition cannot satisfy the phase integration condition in the second condition. However, phase integration can be achieved by introducing a 90-degree periodic polar inversion structure. This will be described below. Taking the period of the grating of the periodic polar inversion structure as the phase unconformity of Λ is substituted into formula (4) to form: Δ — 7Γ (no — ne) / λ — (ζτ / Λ) .... .. (6) Based on the formulas (3) and (6), at the wavelength λ, △ = 〇, 100% energy migration is performed. At this time, the wavelength λ ρ is, λ ρ = Λ (no —ne ) ° The inventors of this case have judged that by applying the electric field as described above, a 90-degree partial pole rotation can be generated. The production method of the periodic 90-degree polarized pole rotation area will be briefly explained again. Cut out from the KNb03 crystal as shown in Fig. 54. The main surfaces are a rectangular crystal-shaped element 32 for forming a 45-degree angle with respect to the a-axis and the c-axis, respectively, and the optical honing incident surfaces 50 and 51 are formed. Next, as shown in FIG. 55, the long-side direction is formed on the main surface into the b-axis direction -53-528877f. 5. Description of the invention (52), the electrodes are periodically mounted by means of metal deposition and the like. 30 and 31, an electric field is applied in a direction in which the electrodes 30 and 31 rotate in a polar direction. By applying an electric field, the spontaneous polarization direction of the region between the electrodes 30 and 31 is rotated by 90 degrees with the b axis as the rotation center. Thereby, the polar regions R1 and R2 formed in mutually orthogonal polar directions can be periodically produced. In Figs. 5 and 5, the polar direction is indicated by an arrow, and the refractive index ellipsoid is indicated by an ellipse. After the light is injected into the crystalline element thus produced, the abnormal light component will spatially block off (energy off) in the direction of the wave surface normal direction. However, the light beam generated in the region R1 The blocking is canceled because a reverse beam blocking occurs in the adjacent region R2. Here, after the electrodes 30 and 31 are removed, the electrodes 30a and 31a are formed on the orthogonal plane (b-axis plane) by metal deposition or the like. When a voltage is applied to the electrodes 30a and 31a, a uniform electric field Ey (Ex = Ez = 0, Ey > 0) is generated inside the crystalline element across the entire element. In this state, linearly polarized light is incident in the y-axis direction as the incident light. After increasing the electric field Ey, the outgoing light system forms a combination of two linearly polarized lights to maintain the linearly polarized light from the y-axis polarization and start to rotate in the z-axis direction. After the condition of the formula (6) is satisfied, the electric field Ey is converted into Linearly polarized light with a polarization surface in the z-axis direction. In this way, the polarization surface can be rotated for the light beam, and the polarization surface can be controlled at a high speed by the electro-optical effect to which a voltage should be applied. -54- 528877 V. Description of the Invention (53) In the case where the length of the polarized pole rotation area is 5mm and the distance between the electrodes is 1mm, a rotation of the polarizing surface of approximately 90 degrees can be generated under the applied voltage of 62V. In addition, the incident light described above may be linearly polarized light in the z-axis direction, in which case it is converted into linearly polarized light in the y-axis direction. For partial integration principle in this phase of the wave surface, the light is the light of the accumulating circuit (Ohms ha Company Limited, Author: Hao, Nishihara, Japan Showa 60 years starting on page 67). In addition, the phase-modulated polarizer obtained in this way is basically because it is equivalent to two orthogonal group velocities, so there is no cause for deterioration in transmission characteristics. In addition, it can also be developed beyond the polarizer. With the same structure, it can also be applied to, for example, optical switches or wavelength filters. Figs. 56 to 58 are schematic diagrams illustrating an example of a configuration suitable for an optical switch. Fig. 56 is a perspective view, Fig. 57 is a projection view of the X-z plane seen from the y-axis direction when the electric field is not applied, and Fig. 58 is a view seen from the y-axis direction when the electric field is applied. — Projection of z-plane. As the coordinate axis of the laboratory, the propagation direction is set to the z-axis, the direction of the electric field is set to the y-axis, and the axes respectively perpendicular to the y-axis and the z-axis are set to the X-axis. As a crystalline element, it is crystallized from potassium niobate to form a propagation axis z-direction with respect to the a-axis and c-axis directions of the crystal, respectively forming a 45-degree direction, a crystal length in the direction of the propagation axis is 5 mm, and the distance between the electrodes is 1 The 'incident surface 50 and the emission surface 51 cut into a rectangular shape like mm are optically honed. In the method described with reference to Figs. 54 and 55, the polarized rotation region 86 is formed periodically. Its two ends are -55- 528877 # used to polarize the two polarized lights that have been incident on the pole. 5. Description of the invention (54) Offset area 8 7, and a multiplexing area 88 on the exit side. Electrodes 30a and 31a for applying an electric field are formed on the main surface in the b-axis direction by depositing a metal such as gold or aluminum. The two electrodes 30a and 31a are arranged to face each other. Thereby, an electric field can be applied to the b-axis direction of the crystal. The period of the periodically polarized rotation region 86 is set to A = 18.91 // m, and the length of the region 86 is set to 5 mm. With a condenser lens system not shown in the figure, the incident light system condenses light with a mode radius of about 1000 m and the polarization direction system is formed in the X-axis direction. The constant-light component (TE mode) of the incident light travels straight along the optical axis 91. On the other hand, the abnormal light component is blocked by the light beam, and the propagation direction of the light is shifted along the optical axis 92 by a large deviation from the blocking angle P. In the periodically polarized rotation region 86, the abnormal light (TM mode) propagates at a P angle in the region R1 and propagates at an angle of + p in the region R2, and thus is canceled. Therefore, the microscopic beam blocking system is resisted. Pins can be used while crystals can be used for better efficiency. When the electric field is not applied between the electrodes 30a and 3a, as shown in FIG. 57, the polarized light (TM mode) of the abnormal light is maintained, and the multiplexing region 88 is caused by the original polarized light direction. The + p beam is blocked again at the optical axis 95, and the optical axis 94 is displaced and emitted. On the other hand, the normal light component is linearly advanced along the optical axis 91 while being kept as it is, and is emitted from the emission surface 51. Therefore, in the emission surface 51, the normal light (TE) of the optical axis 91 and the abnormal light (TM) of the optical axis 95 do not overlap. When an electric field is applied to the electrodes 30a and 31a, as shown in FIG. 58, the abnormal light component (TM mode) is in the deviation region 87 along -56-528877 f%. 5. Description of the invention (55) The light beam is interrupted by the optical axis 92 and propagates along the optical axis 93 in the periodic polarization rotation region. At this time, because an electric field is applied to the periodic polarized rotation region 86, the r42 component generates polarized light in the X-axis direction (TM mode) and polarized light in the y-axis direction (TE mode). The transition to the TE mode, at the entrance end of the multiplexing area 88, is used to form a constant light component (TE mode) and proceed straight to the multiplexing area 88. The voltage dependency of the conversion efficiency from TM mode to TE mode when the distance between electrodes is set to 1 mm is shown in FIG. 59. It can be converted by about 100% with an extremely low voltage of about 60V. On the other hand, the constant light component (TE mode) advances straight to the areas 87 and 86. However, in the area 86, a TE-TE mode combination is generated to apply an electric field, and the mode is converted to the TM mode. As a result, an abnormal light component is formed at the entrance end of the multiplexing region 88. Therefore, a light beam of + p is generated along the optical axis and emitted along the optical axis 94. Therefore, the two polarized light components are finally superimposed and emitted from the same optical axis 94, and thus are completely multiplexed. By applying a voltage of about 65V, the polarized light in the X-axis direction is completely converted into polarized light in the y-axis direction 'and can be driven at low voltage. Therefore, if only the light of the optical axis 9 4 is coupled to the optical fiber, a polarization-independent optical switch is formed. Although the configuration examples of FIGS. 56 to 58 are applied as optical switches, 'with the same configuration, the periodic polarized rotation region 86 can be performed only at a wavelength λ p of △ formed by formula (6). Phase integration, therefore, shows strong wavelength dependence. Therefore, an unpolarized white light source that enters the continuous spectrum (spect re) from the optical axis 91, and the spectroscopic light comes from the optical axis 94-57-528877. V. Description of the invention (56) After the light is emitted, the filtering characteristics are obtained. Set the period eight to 1 8 · 9 1 // m, set the length of the periodic polarized rotation region 86 to 5 mm, and reveal the transmission spectrum when 60V is applied between the electrodes 30a and 31a (the distance between the electrodes is 1mm). In Figure 60. As shown in Fig. 60, each spectrum is obtained when the crystallization temperature is set to 20 ° C, 30 ° C, 40 ° C. By changing the temperature in this way, the filtering characteristics can be controlled variably. Therefore, a tunable (t u n a b 1 e) A d d / D r οp optical filter necessary for optical communication can be realized. In addition, the band-shaped region of the chirp can be changed by shortening the crystal length. The graph shown in FIG. 61 is a graph in which the period Λ is set to 18.91 vm, the length of the periodic pole rotation region 86 is set to 1 mm, and the distance between the electrodes 30a and 31a (the distance between the electrodes is 1mm). Transmission spectrum when 300V is applied. By shortening the length of the periodic polarized rotation region 86, it can be seen that it can be used as a wide transmission band region by increasing the applied voltage. Such a wide band-shaped filter can be used as a filter for a gain flattening filter (Gain f 1 a ten ten n n) of EDFA. In this way, if the periodic polarized rotation region 86 is used, a polarizer or a multiplexer that is necessary in a normal polarization-independent type is unnecessary, and a normal polarization-independent light control can be realized with only one crystalline element. element. However, after the difference in the temperature change rate of the refractive index of the birefringent crystal is used, the group velocity difference can be changed for the two polarization directions. In addition, since the birefringent high-dielectric crystal has spontaneous polarization, it is possible to operate the polarization direction by application of an electric field or the like. Especially in the case where the polar direction is reversed by 180 degrees, only the refractive index of the ± (positive, negative) of the polar direction will not be changed. -58- I528877 V. Description of the Invention (57). If the pole can be operated in a direction other than 180 degrees, the refractive index (group velocity difference) can be controlled. The inventors of the present invention have found that, as described above, by using a crystalline material whose crystal symmetry is orthorhombic, the crystals are cut out at various cutout angles, and the direction of polarization can be controlled by applying an electric field as an electrode. In addition, in addition to 180 degrees of mutual polar directions, a crystalline element is formed by periodically forming polar regions such as 90 degrees, and the difference time can be controlled by obliquely entering light from the boundary interface of the polar regions delay. As shown in FIG. 62, the polarized direction of the crystal is a crystal formed by cutting a cross section at a 45-degree direction to the surface to form a parallelogram. At this time, the b-axis direction is formed perpendicular to the paper surface. Set the area from ① to 所示 as shown in the figure. Here, in the areas ① and ⑦ at both ends, the optical path length is formed in half. Regarding the even-numbered areas ②④⑥, electrodes 30 and 31 are formed on the surface. After entering the light from the end surface 100 along the optical axis 100, the light system repeats total reflection and exits from the end surface 102. The angle of incidence on the reflecting surface is approximately 45 degrees. In addition, at this time, the total reflection point on the surface is preferably used to adjust the incident position to the boundary point formed in each area. Set the polarized light component in the paper direction as TE polarized light 'Set the polarized light in the paper vertical direction as TM polarized light, and when the polarized directions in the areas ① to ⑦ are uniform, the crystals felt in TE and TM modes in each area The polarization direction of the axis is shown in FIG. 63. The TM polarized light in the vertical direction on the paper surface has the refractive index in the b-axis direction in all areas. On the other hand, the refractive index of TE polarized light changes with each total reflection. For example, in the region ①, the refractive index of the c-axis is -59- 528877. 5. Description of the invention (58) The rate is in the region ② The aspect is that the refractive index in the a-axis direction changes interactively in each region. The propagation distance of light in each region is assumed to be 1 mm, and the wavelength of light is assumed to be 1.55 μm (area ① and 为 are added to icm) ° The difference between the propagation time difference between the b polarized component and the c polarized component rb_rc is in lcm It is 5ps / cm, and the propagation time difference rb-ra between b polarized component and a polarized component is 1.2ps / cm. The TM polarized light system has a b-axis refractive index and propagates at 6 cm, the TE polarized light system has a a-axis refractive index and propagates at 3 cm, and the c-axis refractive index and 3 cm propagates. Therefore, after TM polarized light and TE polarized light propagate at 6c ni, the differential delay time between the two is formed to 18.6ps. As shown in Fig. 64, by applying an electric field to between the electrodes ②④⑥ of the region ', the polar direction can be rotated by 90 degrees. In this case, the TE polarized light is shaped so that the refractive index in the c-axis direction is felt in all the regions (see Fig. 65). Since the refractive index in the c-axis direction is the smallest and the refractive index in the b-axis direction is the largest, the delay time difference is formed to the maximum in the two polarization directions in this case. In this case, after the propagation length of each area is also equal to 1 cm, the TM polarized light system experiences a b-axis refractive index and propagates at 6 cm, and the TE polarized light system experiences a c-axis refractive index and propagates at 6 cm. Therefore, after TM polarized light and TE polarized light propagate at 6 cm, the differential delay time between the two is 30 p s. In the example in Fig. 64, there are three polarization control areas where the electrodes exist. Therefore, by combining the control electrodes, the differential time delay between the two polarization directions can be controlled as shown in Fig. 66 to 18.6. There are 4 stages from the beginning of ps to -60-528877. V. Description of invention (59) 30ps. It is generated by using the birefringent crystal 18.6ps shown in Fig. 66 as the offset. However, the polarization direction can be exchanged in the crystal of the same length, and the offset can be offset by the incidence. Furthermore, the temperature control can also be used to control the differential time difference continuously. In this case, only a small temperature difference is used to compensate for the large delay time difference. As a crystalline material, a material with a large temperature change constant of 5nb / (5T and 5nc / 5T) of the refractive index in the two polarization directions is preferred. In general, the refractive index temperature coefficient of a birefringent optical crystal (5 nb / 5 T, 5nc / 5T is, in the range of 10 · 5 ~ 10.6 ·, the sign is also the same sign as + (positive) 値Therefore, even with a larger refractive index temperature coefficient, because the signs are the same, the difference in group delay time in the two polarization directions is smaller due to the cancellation. On the other hand, the refraction of KNb03 crystal (abbreviated as KN crystal) The temperature coefficient of temperature is not the only one with a large temperature coefficient in the order of 10.5. Surprisingly, the temperature coefficient of refractive index in the b-axis direction is a rare crystal with a-(negative) 値 sign. Therefore, It has the characteristic that the group delay time difference in the two polarization directions increases by the temperature change. In the KN crystal, the temperature change rate of the differential delay time rb-rc between b-axis polarization and c-axis polarization is -0.004ps / cm / for lcm C. By changing the propagation length of the KN crystal to 10 cm and changing the temperature from room temperature to 200 ° C, the propagation delay time difference from 50 ps to 42 ps can be changed -61-528877 V. Description of the invention (60) To -8 ps 〇 Therefore, the differential delay time can be continuously controlled by optimally continuously varying by temperature conversion and stepwise differential delay time difference by polar control. At 10Mbps transmission system In the case where such a correction amount is not sufficient, it is necessary to further increase the temperature difference and the crystal length. The method of increasing the temperature difference between the two crystals is based on the relationship between the thermal insulation structure and the power consumption. It is not practical. On the other hand, the method of growing crystal growth is difficult because it is difficult to obtain KN crystals in reality. Therefore, there are considerable limitations. As a method to solve this problem, the optical axis in the crystal is borrowed. The optical path length can be increased by folding multiple times. In addition, in higher-speed transmission systems, the pulse amplitude becomes shorter and the amount of correction decreases, so a good relationship is formed. The group delay time difference compensation shown in Figure 67 A structural diagram of a device configuration example. Fig. 68A is a perspective view of a crystalline part, Fig. 68B is a plan view, and Fig. 6 8C is a side view. Usually "on a variable differential time delay line" In order to make the P SP direction coincide with the polarization direction of the variable differential time delay line in the front section of the signal light incident from the optical fiber, a PC (Polarization Controller: Polarization Controller) must be used, and the diagram is omitted here. As a high-dielectric crystal, potassium niobate (KNb03) crystals are cut into a trapezoidal shape, and optically honing forms two rectangular main surfaces 103, 104 of a reflective surface and a trapezoidal surface at a right angle to each other 1 0 5, 1 The 0 6 ° crystal orientation is used to form the side -62- 528877 t. 5. Description of the invention (61) 107 is formed as the b axis, and the main surface 103 is formed as an a-c45 degree azimuth. In addition, the long sides of the main surfaces 103 and 104 are oriented. The lengths were cut to 42mm and 56mm, respectively. With the polarizing controller PC set in the front stage of the injection, the PSP is adjusted to form a parallel (TE) and vertical (TE) incidence surface. TM polarized light senses the refractive index in the b-axis direction. The TE polarization system is formed to change in the polarization state of each polarization control region. Further, a dielectric multilayer film is coated on the main surfaces 103 and 104 so as to form a total reflection, and electrodes 30 and 31 each having a width of 7 mm are formed on the coating. The output light of the optical fiber is transmitted through the lens 108 at a substantially right angle to the entrance surface 105 in the high-dielectric crystal. The incident light is repeatedly reflected between the two main surfaces 103 and 104 to reach the trapezoidal surface 106. The trapezoidal surface 106 is an optical coating that totally reflects light. The light reflected by the trapezoidal surface 106 is emitted from the trapezoidal surface 105 through the optical axis 109, and is totally reflected again on the main surfaces 103 and 104. In this case, since the electrode control area is formed twice, the differential delay time is doubled compared to the case of one pass. As a result, the differential delay time can be controlled from 37 ps to 60 ps. Fig. 69 is a configuration diagram of another configuration example of the group delay time difference correction device. Here, two high-dielectric substrates are used in a row. Generally, on the variable differential time delay line, before the signal light from the optical fiber is incident, in order to make the PSP direction and the polarization direction of the variable differential time delay line consistent, the PC (Polarization Controller -63- 528877 five Explanation of the invention (62): Polarization controller) control, the diagram is omitted here. In the structure of Fig. 69, high-dielectric substrates 110 and 111 having the same length and shape are used. In addition, the high-dielectric substrate 1 10 has the same structure as that shown in FIG. 67. However, it is an example in which the number of electrodes provided on the substrate 1 10 is increased to 6. The differential delay time can be 8 steps. control. The trapezoidal surfaces 105 and 106 are subjected to full transmission coating of transmitted light. The offset amount of the differential delay time generated in the first crystal substrate 1 110 is offset by the second crystal substrate 1 1 1. The light emitted from the trapezoidal surface 1 06 of the first crystal substrate 11 0 passes through the 1/2 wavelength plate 11 2, replaces the TM polarized component and the T T polarized component, and then enters the second crystal substrate 1 1 1. The second crystalline substrate 111 is one having uniform polarization. The light system through which the first crystal substrate 1 1 0 passes through TE polarization is used as the TM polarization wave in the second crystal substrate 1 11, and the light system through which the first crystal substrate 1 1 0 passes through TE polarization wave is on the second crystal substrate. 1 1 1 propagates separately as TE bias waves. Thereby, the offset amount of the differential delay time generated by the first crystal substrate 110 can be offset. With this configuration, the polarization direction of the polarization control region of the first crystal substrate 110 can be controlled, and the differential delay time can be controlled in 8 steps in the range of 0 to 32 psm. The present invention is not deviated from its spirit or main features, and various other implementation modes can be implemented. Therefore, all the points of the foregoing embodiments are merely examples, the scope of the present invention is disclosed in the scope of patent application, and the text of the specification is not binding. Furthermore, any deformation or change that belongs to the scope of patent application is within the scope of the present invention. -64- 528877 V. Description of the Invention (63) [Possibility of Industrial Utilization] With the above-mentioned invention, it is possible to realize a component having properties that can be achieved by a conventional laminated material, and at the same time, it is possible Achieving a thin-film laminate structure that is impossible to achieve in component bonding, etc., has considerable practical and industrial effects. BRIEF DESCRIPTION OF THE DRAWINGS The objects, features, and advantages of the present invention are better clarified by the following detailed description and drawings. Figure 1 shows the cut-out and partial polarization of potassium niobate crystals. Figure 2 shows the cut-out and partial polarization of potassium niobate crystals. Figure 3 shows the cut-out and partial polarization of potassium niobate crystals. Figure 4 is a schematic diagram showing the relationship between the direction of spontaneous polarization and the direction of electric field application. The angular dependence of Eanti, the effective electric field component shown in Figure 5, is intended. Figure 6 is a diagram showing the dependence of the electric field strength of each electric field component at 0 = 60 °. Figure 7 is a pattern diagram of the 90-degree polarized border region. Fig. 8 is a diagram showing the dependence of the incident angle 0 on the refractive index difference perceived by the P waves. Figure 9 is a schematic diagram showing the orientation of the obtained potassium niobate crystals. Fig. 10 is a schematic diagram showing the orientation of the obtained potassium niobate crystals. Fig. 11 is a schematic diagram showing the orientation of the obtained potassium niobate crystals. -65- i \ 528877 V. Description of the invention (64) Figure 12 shows the orientation of the obtained potassium niobate crystals. Figure 13 shows the orientation of the obtained potassium niobate crystals. Figs. 14A, 14B, 14C, and 14D are diagrams for explaining the control method of the pole direction. Figure 15 is a diagram for explaining the control method of the polar direction. Figure 16 is a schematic diagram of the border state between the initial polar region 10 and the 60-degree polar region 20 at the initial stage. Figure 17 is a schematic drawing of the refractive index ellipsoid 16 of the initial polar region 10 and the refractive index ellipsoid 17 of the 60-degree polar region 20 when it is cut on the interface 15 in a vertical plane. FIG. 18 is a schematic diagram of the crystal cutting out and the polarization direction of the present invention. FIG. 19 is a schematic diagram of the crystal cutting out and the polarization direction of the present invention. Fig. 20 shows an example of a polarized beam splitter made by the present invention. Figure 21 is a cross-sectional view of a crystalline element that partially controls the direction of the polar poles. ○ Figures 22A and 22B are schematic diagrams showing the relationship between the coordinate axis of the initial polar region 10 and the coordinate axis of the 60-degree polar region. Figures 23A, 23B, and 23C are diagrams showing the surface shape change of the crystalline element that locally controls the polar direction. Figure 24 shows the polarized control of potassium niobate crystals. A perspective view of a configuration example of the polarized beam splitter created.

-66- 528877 V. Description of the Invention (65) Figure 25A and Figure 25B are explanatory diagrams of the polarization method used in the crystallization of the present invention. Figures 26A and 26B are schematic diagrams related to the optical filter of the present invention. Figure 27 is a schematic diagram of another optical filter according to the present invention. Figure 28 is a schematic diagram of the relationship between two refractive indices in the incidence angle and refractive index ellipsoid. Figures 29A, 29B, and 29C are schematic diagrams of the transmission spectrum when the period of the region in the optical filter of the present invention is changed. Figures 30A, 30B, and 30C are schematic diagrams of transmission spectra when the angle of incidence of the optical filter according to the present invention is changed. Figures 31A, 31B, and 31C are explanatory diagrams of the laser multiplexer and its manufacturing process of the present invention. 32A and 32B are schematic diagrams of a first configuration example of the laser beam generating device of the present invention. Figures 33A and 33B are schematic diagrams of a second configuration example of the laser beam generating device of the present invention. 34A and 34B are schematic diagrams showing a third configuration example of the laser beam generating device of the present invention. Figures 35A and 35B show the laser beam generating device of the present invention -67- 528877 * V. Schematic diagram of the fourth configuration example of the invention description (66). Figure 36A is a schematic diagram of the high-dielectric substrate before the optical waveguide is manufactured. Figure 36B is a schematic diagram of the optical waveguide structure with a 90-degree polarized structure. Figure 36C is based on the Schematic diagram of the structure of a 90-degree polarized optical waveguide and the refractive index ellipsoid in each area. Fig. 37 is a schematic diagram showing a linear enlargement of one of the manufacturing processes in the simultaneous production method of the optical waveguide structure manufacturing method of the present invention and the method of simultaneous production of the micropolar structure and the optical waveguide structure of the periodic polarization inversion of the present invention. Figure 38B is a schematic diagram of an example of an electrode structure used to make an optical waveguide structure. Figure 38A is a schematic diagram of the z-plane. Figure 38B is a schematic diagram of the Y-plane. Figure 39A is a structural pattern diagram with a new optical waveguide structure using a 90-degree polar region and a combination of subtle polar structures such as a periodic polar-reverse structure through a 180-degree polar region. Figure 39B The figure shows a pattern diagram of a subtle polar structure such as a periodic polar reversal structure with a 180-degree polar region in the optical waveguide region. Figure 39C is a schematic diagram of the electrode form used in the embodiment. . Figures 4QA, 40B, and 40C are examples of the electrode structure used to simultaneously produce a slightly polarized structure, such as an optical waveguide structure and a periodic polarized structure. Figure 40A is a schematic diagram of the z-plane. The diagram shown in Figure 40B is a pattern diagram from the Y plane, and the diagram shown in Figure 40C is a pattern diagram from the X plane. Figure 41 shows a 90-degree polar structure produced by applying an electric field -68- 528877 V. Description of the invention (67) An optical micrograph of the structure of the light guide wave path as viewed from the y direction. Fig. 42 shows an optical micrograph of a 180-degree polarized structure produced by an electric field application method, in which the periodic polarized structure is inverted from the z direction before fabrication. Fig. 43 is a schematic diagram of an optical waveguide element which forms an optical waveguide region in a crystal. Fig. 44 is a schematic diagram of an electric field application direction and a light traveling direction. Figure 45 is a schematic diagram of the direction of application of an electric field and the direction of travel of light. Figure 46 shows the relationship between the travel angle and the change in refractive index. FIG. 47 is an explanatory diagram illustrating a method for forming a polar region. Figures 48A and 48B are examples of the light deflector of the present invention. Figure 49 is an example of forming a plurality of polar regions. Fig. 50 is a diagram showing another example of forming a plurality of polar regions. Figure 51 is a schematic diagram of the electric field and the deflection angle. Fig. 52 is an explanatory diagram illustrating the present invention. 53A and 53B are diagrams showing the relationship between the electric field and the refractive index ellipsoid. Fig. 54 is an explanatory diagram illustrating the principle of the present invention. Fig. 55 is an explanatory diagram illustrating the principle of the present invention. Fig. 56 is an explanatory diagram illustrating an embodiment of the present invention. -69- I, 528877 V. Description of the invention (68) Figure 5 7 shows the operation without an applied electric field. Figure 58 is a schematic diagram of the action of applying an electric field. Figure 59 shows the relationship between applied voltage and change efficiency. Figure 60 shows the transmission spectrum when a voltage of 60V is applied between the electrodes. Figure 61 shows the transmission spectrum when a voltage of 300V is applied between the electrodes. Fig. 62 is an explanatory diagram showing the relationship between the crystal polarization direction and the electrode arrangement. Figure 63 is an explanatory diagram showing the refractive indices of TE polarized light and TM polarized light. Figure 64 is not an explanatory diagram of the relationship between the polarization direction of the crystal and the electrode arrangement when an electric field is applied. * Figure 65 is a § bright map of the refractive indices of TE polarized light and TM polarized light when an electric field is applied. Figure 66 is a bar graph of the control amount of the differential time delay. Fig. 67 is a schematic diagram showing a configuration example of a group delay time difference correction device. Figure 68A is not a ^^ body view of the crystalline part. Figure 68B is a plan view, and Figure 68C is a side view. Fig. 69 is a diagram showing another configuration example of the group delay time difference correction device. Figure 70 shows the intention of the conventional polarized beam splitter. -70- 528877 V. Description of the Invention (69) Figure 71 shows a schematic diagram for explaining the conventional method of polar reversal. [Illustration of Symbols] 1 · Straight line 1 0: 0 degree polar area 100: End surface 1 01: Optical axis 102: End surface 103: Main surface 1 04: Main surface 105: Trapezoidal surface 106: Trapezoidal surface 107: Side surface 1 1 : Refractive index ellipsoid 1 10: High-dielectric substrate, crystal substrate 1 11: Substrate, high-dielectric substrate 1 2: Refractive index ellipsoid 1 5: Interface 1 6: Refractive index ellipsoid 1 7: Refractive index ellipsoid Body 2: straight line 20: 60-degree polarized area 2 0: area 21: polarized direction -71-528877 V. Description of the invention (70) 22: 180-degree polarized direction 23: 90-degree polarized direction 24: 60 degrees Polarity direction 25: 120 degrees Polarity direction 3: straight line 3 0: electrode, electrode pair 3 0 a: electrode 31: electrode, electrode pair 3 la: electrode 32: crystal element 33, surface 35: surface 39: output end surface 39: Surface 4: Straight line 41: Diamond mirror 42: Diamond mirror 43: Optical multilayer film 44: UV adhesive 45 zhai [J wafer 46: electrode 47: photoresist 48: 0-ring-72-528877

I λ V. Description of the invention (71) 4 9: Liquid electrode 5: Curve 5 0: Entrance surface 5 1: Exit surface 5 2: Polarized region 5 3: Polarized region 5 4: Photon detector 5 6: Laser Beam multiplexer 56b: Laser beam multiplexer 56d: Laser beam multiplexer 5 7 a: Area 57b: Area 5 7 c: Polarized area 5 7 d: Polarized area 57e: Polarized area 5 7 f : Polar polar region 58: Glass flat plate 5 9: Axial object lens 6: Curve 60 · Fiber 60a: Core 60b: Cover 61: Laser beam generating device -73- 528877 V. Description of the invention (72) 62: Optical laser Radiation array 6 3 a: light emitting region 6 3 b: light emitting region 6 3 c: light emitting region 6 3 d: light emitting region 6 4: cylindrical lens 66: birefringent crystal element 67: birefringent crystal element 68: birefringent crystal element 70: substrate, high-dielectric substrate 7 1: optical waveguide region 72: 90-degree polarized region 73: electrode 74: electrode 75: pattern 7 6: insulating layer 7 8: region 79: finely polarized structure 80: figure Model 81: Optical axis 8 2: Polarized region 8 3 a · Boundary 8 3 b · Boundary -74- 528877 f V. Description of the invention (73) 8 4: Polarized region 8 6: Polarized region 8 8: Wave zone 9 1: optical axis 9 2: optical axis 93: optical axis 94: optical axis 95: optical axis Ca: vector Cb: vector E: electric field direction Eb: electric field E factory electric field L: light LA: laser beam LB: laser Beam LC: Laser beam LD: Laser beam LE: Laser beam LF: Laser beam V: Vector a: Crystal axis b: Crystal axis c: Crystal axis -75-

Claims (1)

528877 VI. Scope of patent application 1. A light control element characterized by having at least two regions formed by crystals, having different refractive indices from each other due to spontaneous polarization directions, and interconnecting each other at an interface, horizontally The overall composition across the two regions including the interface is uniform. 2. The light control element according to item 1 of the scope of patent application, wherein the spontaneous polarization directions of at least two regions are orthogonal to each other. 3. The light control element according to item 1 of the scope of patent application, wherein the spontaneous polarization directions of at least two regions are at 60 degrees or 120 degrees to each other. 4. The light control element according to any one of claims 1 to 3, wherein the crystal symmetry is orthorhombic. 5. The light control element according to item 4 of the patent application, wherein the aforementioned crystal is formed of either KNb03 or KTi0P04. 6 · —A method for manufacturing a light control element, which is a method for manufacturing a light control element in any one of the scope of claims 1 to 5, which is characterized in that the rotation is orthogonal to the polar direction before the control The electrodes are arranged in the plane of the easy axis to generate the electric field vector component. After the angle between the polarizing direction before the control and the electric field vector is set to 0, when 0 ° < 0 $ 90 °, the magnitude of the applied electric field is set to Ea, the 90-degree polarized rotating electric field intensity is set to Eth90 after 'to satisfy Ea · Sin (0) — Eth9 0> 0' and Ea · Sin (0) — Eth9. The angle Θ of Ea · Cos (0) and the electric field is applied to the crystal under the condition that the electric field is E a 'to control the polarization direction. 7 · —A kind of manufacturing method of light control element -76- 528877 ^ The method for applying a light control element according to any one of claims 1 to 5, which is characterized in that it is used to generate the surface of the axis of easy rotation that is orthogonal to the polar direction before control. The electric field vector constitutes the electrode as a component, and the angle between the polarizing direction before the control and the electric field vector is set to 0, and after 90 ° < 0 $ 180 °, the magnitude of the applied electric field is set to Ea, and the intensity of the polarized rotating electric field is 90 degrees Set to Eth9Q, and the 180-degree pole reversal electric field strength is set to Ethl8Q to satisfy Ea · S i η (θ) — Eth90 > — Ea · Cos (0) — Ethi80, and 0 < Ea · Sin (0) — The angle of Eth9Q is 0 and the electric field is applied to the crystal under the condition that the electric field is Ea to control the polar axis. 8-A method for manufacturing a light control element, which is a method for manufacturing a light control element in any one of claims 1 to 5, which is characterized in that the direction vector Cb of the polarization direction before control and The direction vector Ca of the polarized direction after control forms vector V = vector Cb—the direction of vector V of vector Ca, which is used to form a positive electric field to control the polarized direction by applying an electric field holding an electric field component. 9. · An optical filter comprising a plurality of regions having periodic differences in refractive index and periodic differences in refractive index due to a polarization direction, and a composition spanning all the regions is made of a uniform crystalline material form. 10 · —A laser beam combiner characterized in that it is formed of a birefringent crystal having at least two regions with a uniform composition and different polar directions, and is incident from the outside and performs a majority of each region Of the laser beams, when two laser beams are used as a pair of laser beams, the refraction -77- 528877 is used. The beam in the aforementioned region of the patent application f is blocked to make at least one pair. The laser beams of the birefringent crystals define the polarizing directions as close to each other as the output end faces of the laser beams. 1 1. An optical waveguide element is an optical waveguide element formed of a high-dielectric substrate with a uniform composition provided in the optical waveguide, characterized in that the polarization direction and the sandwiching of the region where the optical waveguide is formed The polarization directions of the regions of the optical waveguide become different, and the refractive index of the region where the optical waveguide is to be formed is higher than that of the region sandwiched by the optical waveguide. 12. A light-biasing element, characterized in that it has electrodes disposed on the main surface of a high-dielectric substrate having a uniform composition, and the above-mentioned high-dielectric substrate has a plurality of polarizations with different polar shapes in the polar axis direction. A polar region has an interface with an adjacent region, and the polar polar axis in each region has a vertical component to the interface. The structure is such that the light beam that has entered the aforementioned high-dielectric substrate passes a majority of a predetermined shape. Those who are partial. 13. —A light control element, comprising a high-dielectric substrate having a uniform composition with an electro-optical effect and an electrode provided on a main surface of the high-dielectric, in the high-dielectric substrate The polar polar axis system is different and most of the polar polar regions are formed periodically. There is an interface between the regions. The polar polar axis system in each region has a vertical component to the interface. The light beam of the electrical substrate is configured as the aforementioned polarized region formed periodically. 14. A variable difference time delay line, comprising: a high-dielectric substrate with a uniform composition; and one or more pairs of -78- 528877 ★ Sixth, patent application electrode pairs are formed in The two main faces of the high-dielectric substrate are provided with polarized regions in the substrate; the direction of the polarized regions is changed by applying an electric field to the electrode pair, and one of the two is controlled. Corrects the differential time delay of the two polarization directions by the refractive index in the polarization direction -79-