TW528875B - Method and device for adjusting timing of a semiconductor tester - Google Patents
Method and device for adjusting timing of a semiconductor tester Download PDFInfo
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- TW528875B TW528875B TW90132667A TW90132667A TW528875B TW 528875 B TW528875 B TW 528875B TW 90132667 A TW90132667 A TW 90132667A TW 90132667 A TW90132667 A TW 90132667A TW 528875 B TW528875 B TW 528875B
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528875528875
【發明領域】 本發明係有關^ 及校正裝置,特別j $ 導體測試設備之時脈校正为次 talk〕因素之訊=有關於一種包含隔線干擾〔cross 法,以校正半導㈣真〔Slgnal j· i tter〕的實際量測方 【先前技術】導體測試設備之時脈。 在半導體測試中 記憶體模組等之電如、導體晶圓、半導體封裝結構及 導體產品之運作槪φ測試’半導體測試設備應提供符合半[Field of the invention] The present invention is related to ^ and correction devices, especially j $ conductor test equipment, clock correction is a secondary talk] factor = there is a kind of method including cross-line interference [cross method to correct the semi-conductor true [Slgnal j.itter] Actual measurement side [Prior art] Clock of conductor testing equipment. In semiconductor testing, the operation of electrical modules such as memory modules, conductor wafers, semiconductor packaging structures, and conductor products. Φ test. Semiconductor testing equipment should provide
頻率高速化,半暮日,#抓#耆各種丰導體產σσ之運作 • 體測试纟又備之時脈驅動器〔c 1 〇 c k 1 r 1 = e r ^所產生之時脈信號頻率需要加快,故在每一有限 之%脈信號内,半導體測試設備所能容許之信號失真偏差 必須有效規範,然而半導體測試設備本身元件與線路的延 遲效應將導致測試信號之失真,嚴重影響測試半導體產品 時之測試系統穩定性。 在中華民國專利公報公告第38 8795號「信號測試之輔 助裝置及方法」發明專利中,揭示一種測得最大與最小抖 動偏差之信號測試方法,其步驟為先取得一信號之相鄰脈 衝之時間差,並求其平均值,並計算每一時間差與該平均 值之差’故能依上述每一時間差與該平均值之差取得作卞 之抖動偏差,利用一信號選擇裝置由第一信號與第丄作^ 選擇其中之一信號輸出,但在貫際半導體測試過程中 、、, 非逐一進行單一測試信號之輸出與接受,當多個^試訊^ 被輸出與接受時’其係傳送於測試設備本身斑 巧丹刼測卡之線High-speed frequency, half twilight, # grasp # 耆 operation of various σ conductors to produce σσ • physical test 纟 ready clock driver [c 1 〇ck 1 r 1 = er ^ The frequency of the clock signal generated needs to be accelerated, Therefore, within each finite% pulse signal, the signal distortion deviation that the semiconductor test equipment can tolerate must be effectively regulated. However, the delay effect of the components and lines of the semiconductor test equipment itself will cause the distortion of the test signal, which will seriously affect the test signal of semiconductor products. Test system stability. In the invention patent of the Republic of China Patent Gazette No. 38 8795 "Auxiliary device and method for signal testing", a signal testing method for measuring the maximum and minimum jitter deviation is disclosed. The step is to first obtain the time difference between adjacent pulses of a signal. , And calculate the average value, and calculate the difference between each time difference and the average value ', so that the jitter deviation can be obtained according to the difference between each time difference and the average value, and a signal selection device is used to change the first signal and the first Action ^ Select one of the signal outputs, but during the inter-semiconductor test process, you must not output and accept a single test signal one by one. When multiple ^ trials are output and accepted, it is transmitted to the test. The line of the device itself
528875 五、發明說明(2) 路之間,因相 t a 1 k ,或稱串 測試時之信號 【發明目的及 本發明之 脈校正方法, 裝置並選擇性 之訊號失真程 而確實之校正 本發明之 脈校正裝置, 導體測試設備 鄰之電路 訊〕因素 失真程度 概要】 主要目的 利用多個 量測其中 度係已包 該半導體 運作引出之 應該一併考 ,以進行有 在於提供一 訊號傳送於 一訊號之訊 含隔線干優 測試設備之 隔線干擾〔cross 量並計算,以掌握實際 效而確貫之校正。 次一 的在於提供 號,並 已包含 導體測 為 脈校正 試設備 選擇裝 示波器 素之訊 器。 依 要包含 以一示 隔線干 試設備 了達到 方法係 輸送至 置或訊 〔osc i 號失真 本發明 有一積 利用一積 輸出端之 波器量測 擾之影響 之時脈。 上述之目 模擬實際 校正裝置 娆選擇電 11oscop e程度,以 體電路模擬 輸入端,以 出其中一訊 因素,以供 的,本發明 測試狀況將 之積體電路 路將其中一 〕’爾後量 校正該半導 之半導體測試設備之 體電路模擬器及至少 種半導體測 半導體測試 號失真程度 之影響因子 時脈。 種半導體測 器具有複數 接受校正測 號之訊號失 有效而確實 試設備之時 設備與校$ ,故該測得 ,以供有效 試設備之時 個對應於半 試之多個訊 真程度,其 之校正該半 1!'<Λ 之半導體測試設備之時 多個訊號由一半導體測 模擬器,並經由一訊號 訊號傳送至校正裝置之 測其包含有隔線干擾因 體測試設備之時脈驅動 時脈校正裝置,其係主 一示波器,該積體電路528875 V. Description of the invention (2) Between the roads, the signal ta 1 k, or the signal during the string test [the purpose of the invention and the pulse correction method of the present invention, the device and the selective signal distortion path, accurately correct the present invention Pulse correction device, circuit test of conductor testing equipment] Summary of factor distortion levels] The main purpose is to use multiple measurements, the degree of which has been included in the operation of the semiconductor should be considered together, in order to provide a signal transmitted in a The signal of the signal contains the line interference of cross-line dry good test equipment (cross quantity and calculation, in order to grasp the actual effect and consistent correction. The next is to provide the number, and has included the conductor measurement as the pulse correction test equipment, choose to install the oscilloscope element. The method is based on the method of transmitting the test equipment with a separate line to reach the device or signal [osc i distortion. The present invention has a product that uses a wave output device to measure the impact of disturbance. The above purpose simulates an actual correction device. The degree of electrical 11oscop e is selected, and the body circuit analog input terminal is used to output one of the signal factors for the purpose of the test conditions of the present invention. The body circuit simulator of the semiconducting semiconductor testing equipment and at least one kind of semiconductor factor affecting the degree of distortion of the semiconductor test number clock. This type of semiconductor tester has multiple devices that receive calibration test signals that are not valid and actually test the device. The device and the calibration are therefore tested. Therefore, for the test of valid devices, each test corresponds to multiple levels of reliability. When the semi-1! '≪ Λ semiconductor test equipment is calibrated, a plurality of signals are transmitted from a semiconductor test simulator to a calibration device via a signal signal, and the measurement includes a clock of the line interference test equipment. Driving clock correction device, which is a main oscilloscope, the integrated circuit
528875528875
模擬器,如晶圓模擬器、晶 模擬器’其係具有複數個輸 輸入端係對應於半導體測試 接至該示波器,較佳地,該 说選擇電路,或者在積體電 訊號選擇裝置,以選擇性量 【發明詳細說明】 片模擬器或半導體封裝結構之 入端以及至少一輸出端,該些 設備之輸出端,該輸出端係連 積體電路模擬器係包含有一訊 路模擬器與示波器之間連接一 測訊號失真程度。 如第1及2圖所示, 測試設備之時脈校正裝 20及至少一示波器30, 脈0 依本發明之一具體實施例,半導體 置係主要包含有一積體電路模擬器 用以校正半導體測試設備1 0之時 如第1及2圖所示,積體電路模擬器2〇係具 一輸出端22,如晶圓模擬器、晶片模擬器I 導體ί裝、结構之板擬器,其中該積體電路模擬器2〇之複 數個輸入端21係對應於半導體測試設備1〇之輸出端〔如探 針1 3〕,在本實施例中,半導體測試設備丨〇係為測試半導 體晶圓之測試設備,其具有一測試頭丨丨〔test head〕, 並在測試頭11處裝設有一探測卡12 ipr〇be card〕,而探 測卡12形成有複數個探針13,在習知之半導體測試過程, 探針13係壓觸半導體晶圓之如焊墊或凸塊之電極 〔eletrode〕,以作為該半導體測試設備1〇之輸出端,該 積體電路模擬器2 0係為一晶圓模擬器,其複數個輪入端2 j 之排列分布係模擬待測半導體晶圓之電極,此外,該積體 電路模擬器2 0係具有一訊號接收電路23及一訊號選擇電路Simulators, such as wafer simulators and crystal simulators, have a plurality of input and output terminals corresponding to the semiconductor test connected to the oscilloscope. Preferably, the selection circuit or the integrated signal selection device is used to Selective quantity [Detailed description of the invention] The chip simulator or the semiconductor package structure's input terminal and at least one output terminal, the output terminal of these devices, the output terminal is connected to the integrated circuit simulator, which includes a signal simulator and an oscilloscope Connect a measurement signal distortion. As shown in Figures 1 and 2, the clock correction device 20 and at least one oscilloscope 30 of the test equipment, pulse 0 According to a specific embodiment of the present invention, the semiconductor system mainly includes an integrated circuit simulator to calibrate the semiconductor test equipment. At 10, as shown in Figures 1 and 2, the integrated circuit simulator 20 is provided with an output terminal 22, such as a wafer simulator, a wafer simulator I, a conductor assembly, and a structured board simulator. The plurality of input terminals 21 of the body circuit simulator 20 are corresponding to the output terminals of the semiconductor testing equipment 10 (such as the probes 13). In this embodiment, the semiconductor testing equipment is a test for testing a semiconductor wafer. The device has a test head, and a probe card 12 ipr0be card is installed at the test head 11, and the probe card 12 is formed with a plurality of probes 13 in a conventional semiconductor test process. The probe 13 is an electrode [eletrode] that presses on a semiconductor wafer such as a pad or a bump, and serves as an output terminal of the semiconductor test equipment 10. The integrated circuit simulator 20 is a wafer simulator. , A plurality of rows of round ends 2 j Simulation-based distribution of the test electrodes of the semiconductor wafer, moreover, the integrated circuit-based simulator 20 having a signal receiving circuit 23, and a signal selection circuit
第6頁 528875 五、發明說明(4) ' -- 24 ’該訊號接收電路23係連接該複數個輸入端21,而外% ^ δίΐ 說選擇電路24係具有複數個繼電開關25 〔relay〕,其連 接至對應訊號接收電路2 3之輸入端2 1,用以選擇性開關, 而訊號選擇電路24之另一端則為至少一輪出端2 2,以供傳 送線路26連接至一示波器30〔 osci i 1〇sc〇pe〕。 ’、 示波器30係為同步示波器〔SynChroscope〕或機械式 不波器,其電性連接至該積體電路模擬器2 〇之輸出端2 2, 用以量測測試訊號之訊號失真程度。 依本發明之半導體測試設備之時脈校正方法係利用上 述之校正裝置校正該半導體測試設備丨〇之時脈,首先在校 正裝置放置定位後,啟動該半導體測試設備丨〇,使探測卡Page 6 528875 V. Description of the invention (4) '-24' The signal receiving circuit 23 is connected to the plurality of input terminals 21, and the outside% ^ δίΐ said that the selection circuit 24 has a plurality of relay switches 25 [relay] , Which is connected to the input terminal 21 corresponding to the signal receiving circuit 23 for selective switching, and the other end of the signal selection circuit 24 is at least one round out terminal 2 2 for the transmission line 26 to be connected to an oscilloscope 30 [ osci i 1〇sc〇pe]. ’The oscilloscope 30 is a synchronous oscilloscope [SynChroscope] or a mechanical wave filter, which is electrically connected to the output terminal 22 of the integrated circuit simulator 2 0 to measure the signal distortion level of the test signal. The clock correction method of the semiconductor test equipment according to the present invention uses the above-mentioned calibration device to correct the clock of the semiconductor test equipment. First, after the calibration device is placed and positioned, the semiconductor test equipment is started and the probe card is activated.
1 2之複數個探針1 3〔即半導體測試設備之複數個輸出端〕 接觸至該積體電路模擬器2 〇之複數個對應輸入端2 1,以完 成電性導通,並依實際測試一半導體晶圓之輸出頻率 〔100〜50 0MHz ,甚至更高之頻率〕與測試條件,輸出多個 訊號由該半導體測試設備1 〇上之複數個探針丨3〔輸出端〕 至該積體電路模擬器20之輸入端21 ,利用該電路選擇電路 2 4開通其中一繼電開關2 5,使得多個訊號之一能選擇性傳 送至該示波器3 0,以量測該訊號之訊號失真程度〔s丨gna i j i t ter〕,如眼型圖,由於該多個訊號係模擬實際測試狀 況傳送於該半導體測試設備1 0,故被選擇之訊號除了能反 映出該半導體測試設備10内單一線路偏移' 傳遞延遲等之 效應’更可反映出被鄰近線路磁場引起之隔線干擾 〔cross talk〕之影響因素,如此,量測出之訊號失真程1 2 of the plurality of probes 1 3 (that is, the plurality of output terminals of the semiconductor test equipment) are in contact with the integrated circuit simulator 2 0 of the plurality of corresponding input terminals 2 1 to complete electrical conduction, and according to the actual test one The output frequency of the semiconductor wafer [100 ~ 50 0MHz, or even higher frequency] and test conditions. Multiple signals are output from the plurality of probes on the semiconductor test equipment 10 and the output terminal to the integrated circuit. The input terminal 21 of the simulator 20 uses the circuit selection circuit 24 to turn on one of the relay switches 25, so that one of a plurality of signals can be selectively transmitted to the oscilloscope 30 to measure the signal distortion level of the signal. sgna ijit ter], such as the eye diagram, because the multiple signals are transmitted to the semiconductor test equipment 10 to simulate actual test conditions, the selected signals can reflect a single line offset in the semiconductor test equipment 10 'Effects such as transmission delay' can also reflect the influence factors of cross talk caused by the magnetic field of adjacent lines. In this way, the measured signal distortion process
$ 7頁 528875$ 7 pages 528875
五、發明說明⑸ 度將極為正確,故該測得之§fl 5虎失真程度係可提供作為和 正違半導體測試設備之日ττ脈驅動為〔clock driver〕,以 減少半導體測試設備之儀器誤差,特別適用於「高頻」半 導體測試設備之時脈校正,甚至在逐一測試訊號之失真矛。 度後,其計算得之標準誤差、最大或最小誤差可作為_ ^ 導體測試設備之品質判斷及允收參考。 校正方法 模擬器20 器20之電 個輸出訊 向量測訊 明之另一 設備之時 一訊號選 正半導體 複數個輸 複數個輸 出端〕, 連接該積 以選擇性 ,且測得 確校正半 明之保護 何熟知此 而另一 該積體電路 體電路模擬 2 5,使得多 設備10,反 在本發 半導體測試 模擬器40、 以更快速校 器4 0係具有 模擬器40之 探針1 3〔輸 電開關51並 61 、 62 ,用 號失真程度 素,以更準 故本發 者為準,任 為在採測卞i Z之禝數個探針丨3接觸至 之複數個對應輪入端2 1之後,利用積 路選擇電路2 4關閉全部之繼電開關、 號傳送至探針1 3後反射回半導體測試 號之失真程度。 實施例中,如第3圖所示,提供一種 脈校正裝置’其係包含有一積體電路 擇裝置50及複數個示波器61、62,用 測試設備1 〇之時脈,該積體電路模擬 入端41與輸出端42,其中該積體電路 入端4 1係對應於半導體測試設備丨〇之 而該訊號選擇裝置50係具有複數個繼 體電路模擬器4 0之輸出端4 2與示波器 傳送訊號,以供進行更快速之量測訊 ^ 號失真程度係包含有隔線干擾因 ,體測試設備1 〇之時脈驅動器。 1已圍當視後附之申請專利範圍所界定 項技藝者,在不脫離本發明之精神和5. The description of the invention will be extremely accurate, so the measured §fl 5 tiger distortion level can be provided as a clock driver for the day when the semiconductor test equipment is violated, to reduce the instrument error of the semiconductor test equipment. It is especially suitable for clock correction of "high-frequency" semiconductor test equipment, and even test the distortion spear of the signal one by one. After the measurement, the standard error, the maximum error, or the minimum error calculated by it can be used as the quality judgment and acceptance reference of the conductor testing equipment. Calibration method Simulator 20: The electrical output signal of the device 20 is measured by another device. When a signal is selected, the semiconductor output is selected. The connected output is selected. The measured result is corrected. The protection is familiar with this and the other integrated circuit body circuit simulation 2 5 makes multi-device 10, in contrast to the semiconductor test simulator 40 of the present invention, to faster calibration 4 0 is a probe with simulator 40 3 [ The transmission switches 51 and 61, 62 use the number of distortion levels, whichever is more accurate, whichever is the originator. Any number of probes 33 and 33 which are in contact with the corresponding wheel-in terminal 2 After 1, turn off all the relay switches by using the product selection circuit 2 4 and the signal is transmitted to the probe 1 3 and reflected back to the distortion level of the semiconductor test number. In the embodiment, as shown in FIG. 3, a pulse correction device is provided. The pulse correction device includes an integrated circuit selection device 50 and a plurality of oscilloscopes 61 and 62. The clock of the test device 10 is used to simulate the integrated circuit. Terminal 41 and output terminal 42, where the integrated circuit input terminal 41 is corresponding to the semiconductor test equipment, and the signal selection device 50 is provided with the output terminals 42 of the relay circuit simulator 40 and the oscilloscope. Signals for faster measurement. Signal distortion levels include line interference factors, clock drivers for body testing equipment. 1 Those skilled in the art, as defined in the scope of patent application, do not depart from the spirit and scope of the present invention.
528875 五、發明說明⑹ 範圍内所作之任何變化與修改,均屬於本發明之保護範 圍0528875 V. Description of the Invention Any changes and modifications made within the scope are within the protection scope of the present invention.
U ΙΙϋΙ 第9頁 528875 圖式簡單說明 【圖式說明】 第1 圖:依本發明之一具體實施例,一半導體測試設備與 一校正裝置之示意圖; 第2 圖··依本發明之一具體實施例,該校正裝置與半導體 測試設備之電路連接示意圖;及 第3 圖:依本發明之另一具體實施例,一校正裝置與半導 體測試設備之電路連接示意圖。 【圖 號 說 明 ] 10 半 導 體 測 言式 設 備 11 測 試頭 12 探 測 卡 13 探 針 20 積 體 電 路 模 擬 器 21 輸 入 端 22 輸 出 端 23 訊 號 接 收電路 24 訊 號 選 擇 電 路 25 繼 電 開 關 26 傳 送 線路 30 示 波 器 40 積 體 電 路 模 擬 器 41 輸 入 端 42 輸 出 端 50 訊 號 選 擇 裝 置 51 .繼 電 開 關 61 示 波 器 62 示 波 器U ΙΙϋΙ Page 9 528875 Brief Description of Drawings [Illustration of Drawings] Figure 1: Schematic diagram of a semiconductor test equipment and a calibration device according to a specific embodiment of the present invention; Figure 2 ·· Specifically according to one of the present invention In the embodiment, a schematic diagram of the circuit connection between the calibration device and the semiconductor test equipment; and FIG. 3 is a schematic diagram of the circuit connection of a calibration device and the semiconductor test equipment according to another specific embodiment of the present invention. [Illustration of the drawing number] 10 Semiconductor test equipment 11 Test head 12 Probe card 13 Probe 20 Integrated circuit simulator 21 Input 22 Output 23 Signal receiving circuit 24 Signal selection circuit 25 Relay switch 26 Transmission line 30 Oscilloscope 40 Integrated circuit simulator 41 input terminal 42 output terminal 50 signal selection device 51. relay switch 61 oscilloscope 62 oscilloscope
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TWI401458B (en) * | 2006-04-20 | 2013-07-11 | Advantest Corp | Calibration device, calibration method, test apparatus and test method |
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TWI401458B (en) * | 2006-04-20 | 2013-07-11 | Advantest Corp | Calibration device, calibration method, test apparatus and test method |
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