TW527695B - High reliability fuse structure - Google Patents

High reliability fuse structure Download PDF

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Publication number
TW527695B
TW527695B TW90129510A TW90129510A TW527695B TW 527695 B TW527695 B TW 527695B TW 90129510 A TW90129510 A TW 90129510A TW 90129510 A TW90129510 A TW 90129510A TW 527695 B TW527695 B TW 527695B
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Taiwan
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layer
fuse
conductor layer
conductor
patent application
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TW90129510A
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Chinese (zh)
Inventor
Pei-Ing Paul Lee
R-Chang Lian
Lin-Ching Su
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Nanya Technology Corp
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Publication of TW527695B publication Critical patent/TW527695B/en

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Abstract

A high reliability fuse structure is provided. It comprises a substrate with a reserved fuse area. A first conductor layer is formed on a part of the substrate. A first insulation layer is formed on the substrate and the first conductor layer. A second conductor layer is formed on a part of the first insulated layer that includes the reserved fuse area and the bottom side of a part of the second conductor layer overlaps the corresponding first conductor layer. At least a conductive plug crosses the first insulation layer to electrically connect the first conductor layer and the second conductor layer. A second insulation layer is formed on the first insulation layer and extends to upon the second conductor layer to protect the conductive plug against being corroded by the external gas. A third conductor layer is formed on the second insulation layer. This fuse structure can protect the conductive plug against the external gas corrosion and prevent damaging the neighboring fuses when conducting the laser blow process of the fuse area, so the reliability of the fuse structure is raised.

Description

527695 五、發明說明(1) [發明領域] 本發明係有關於一種高信賴性的熔絲結構(fuse structure);特別是一種能夠確保該導體插塞避免外氣侵 蝕,以及在進行雷射燒斷(Laser Blow)製程時,避免對相 鄰熔絲結構產生傷害之熔絲結構。 [習知技術說明] 積體電路通常會視需要形成可熔斷的連接線(fusible links),也就是「熔絲(fuse)」,當作程式化元件 (programming elements),以利客戶在積體電路製造後, 進打程式化。當然,可熔斷的連接線不限於程式化的用 途’這些連接線亦可用於修復(repairing)有缺陷的電 路。例如,積體電路記憶體通常形成有冗餘電路527695 V. Description of the invention (1) [Field of the invention] The present invention relates to a fuse structure with high reliability; in particular, it can ensure that the conductor plug is protected from external air erosion, and is used for laser burning. Fuse structure to avoid damage to adjacent fuse structure during Laser Blow process. [Known technical description] Integrated circuits usually form fusible links, that is, "fuse", as programming elements to facilitate customers in integrated circuits. After the circuit is manufactured, it is programmed. Of course, the fusible links are not limited to stylized uses. These links can also be used to repair defective circuits. For example, integrated circuit memory is usually formed with redundant circuits

ClrCU1 〇區域,當元件測試時發現有缺陷的 電路%,可利用雷射燒斷(Laser Bi〇w)可熔斷的連接線, 缺陷電路的功效。為了使雷射能夠燒斷熔 絲,業者通常必須在積體電路製程形成熔絲E(fuse ^ndw =露出熔絲。然而習知的錯開型熔絲(staggered 在經雷射燒斷製程之後,常發現由於雷射光束 i:3 i:ΐ熱散射等的原® ’造成熔絲旁的相鄰熔絲結 構X”衝擊—sh0Clo的傷害,例如是產生龜裂 二3 F ’· 1而、使付產品在做高溫高溼加速應力測試之失敗 &1 以及產品可靠度和良率之降低。另外在習 知的錯開型熔絲結構中,上下層的金屬層之間的導體插塞 第5頁 527695In the ClrCU1 〇 area, when a defective circuit is found during component testing, a laser fuse (Laser Biow) fusible connection line can be used, and the efficacy of the defective circuit. In order for the laser to blow the fuse, the operator must usually form a fuse E (fuse ^ ndw = exposed fuse) in the integrated circuit process. However, the conventional staggered fuse (staggered after the laser blown process, It is often found that the laser beam i: 3 i: ΐ thermal scattering and other original ® 'caused the adjacent fuse structure X "shock next to the fuse—sh0Clo's damage, such as the occurrence of cracks 2 3 F' · 1, Make the sub product fail the high temperature and high humidity accelerated stress test & 1 and reduce the reliability and yield of the product. In addition, in the conventional staggered fuse structure, the conductor plug between the upper and lower metal layers is the fifth Page 527695

(contact或plug)也因為相當靠近外氣而容易受到水氣侵 ^(humidity corrosion),而使得產品在做高溫高溼加速 應力測試之失敗(HAST Fai 1 )、以及產品可靠度和良率之 降低。 以下利用第1圖所示之習知的溶絲結構剖面圖,及第2 圖所示之習知的熔絲結構上視圖,以說明習知之溶絲結 構。其中第1圖係從第2圖之C - C ’切線處來看。(contact or plug) is also prone to moisture intrusion due to its close proximity to outside air, which makes the product fail to perform high temperature and high humidity accelerated stress tests (HAST Fai 1), and reduces the reliability and yield of the product. . In the following, a cross-sectional view of the conventional fuse structure shown in FIG. 1 and a top view of the conventional fuse structure shown in FIG. 2 are used to explain the conventional fuse structure. Among them, the first figure is viewed from the C-C 'tangent of the second figure.

首先,請參照第1圖,符號1〇〇表示一絕緣層基底,具 有一預定熔斷區域110。部分該基底1〇〇上形成有一金屬層' M0。該M0層上形成有一氧化層12〇。然後在部分該氧化層曰 120上形成有另一金屬層Ml。在該M0層及該M1層之間有一 氧化層120,並且具有至少一導體插塞13〇穿過該氧化層 120,用以電性連接該M0層及該M1層。另外在位於包含該 預定熔斷區域110的該部分金屬層〇以及部分該氧化層 上方,更形成有一熔絲窗140,而符號15〇係表示鈍化層。 在習知的炼絲結構中,電性連接上下金屬層㈣、M1的導體 ,塞130的側邊(edge)因為相當靠近外氣131而容易受到水 氣侵蝕,而使得產品在做高溫高溼加速應力測試之失敗 (HAST Fail)、以及產品可靠度和良率之降低。First, referring to FIG. 1, reference numeral 100 indicates an insulating layer substrate having a predetermined fuse region 110. A part of the substrate 100 is formed with a metal layer 'M0. An oxide layer 12 is formed on the M0 layer. Then, another metal layer M1 is formed on part of the oxide layer 120. There is an oxide layer 120 between the M0 layer and the M1 layer, and at least one conductor plug 130 passes through the oxide layer 120 for electrically connecting the M0 layer and the M1 layer. In addition, a fuse window 140 is formed above the part of the metal layer 0 and the part of the oxide layer including the predetermined fuse region 110, and the symbol 15 represents a passivation layer. In the conventional wire-finishing structure, the conductors of the upper and lower metal layers 金属 and M1 are electrically connected. The edge of the plug 130 is relatively close to the outside air 131 and is easily eroded by water vapor, which makes the product high temperature and high humidity. HAST Fail and accelerated product reliability and yield reduction.

還有,請參照第2圖,第2圖係第1圖的上視圖,在熔 絲1¾ 1 4 0中’通常有複數條熔絲結構2 i 〇、2 2 〇、2 3 〇,每一 條熔絲結構係包括該M〇層、該導體插塞丨3〇及該M1層。其 中實線係表示Μ1層’虛線係表示μ 〇層,而且每一條溶絲結 構有各自的該熔斷區11 〇。例如當雷射光束29〇照射在熔絲 527695 五、發明說明(3) 結構220的位於該預定熔斷區域110的…層時,由於雷射光 束2 9 0對不準或雷射熱散射的原因,造成溶絲旁的相鄰溶 絲結構2 1 0、2 3 0的該Μ 0層受到熱衝擊的傷害,例如是產生 龜裂(crack),而使得產品在做高溫高溼加速應力測試之 失敗(HAST Fail)、以及產品可靠度和良率之降低。 [發明概述] 有鑑於此,本發明的目的在於提供一種高信賴性的熔 絲結構’特別是一種能夠確保該導體插塞避免外氣侵蝕, 以及在進行雷射燒斷(Laser Blow)製程時,避免對相鄰熔 _ 絲結構產生傷害之熔絲結構。 根據上述目的,本發明提供一種高信賴性的熔絲結 構’包括··(a) —基底,該基底上具有一預定熔斷區域; (b) —第一導體層,形成於部分該基底上;一第一絕緣 層’形成於該基底與該第一導體層上;(d) 一第二導體 層’形成於位於包括該預定熔斷區域之部分該第一絕緣層 上’並且部分該第二導體層下方側係相對應重疊部分該第 了導體層;(e)至少一導體插塞,穿過該第一絕緣層,用 以電性連接該第一導體層與該第二導體層一第二絕 緣層’形成於部分該第一絕緣層上,並延伸至部分該第二 _ 導體f上’用以確保該導體插塞避免外氣侵蝕;以及(g) 一第三導體層,形成於該第二絕緣層上。 另外’本發明亦提出一種熔絲窗,該熔絲窗内具有複 個炼絲結構,而各該熔絲結構包括·· :( a) —基底,該 _Also, please refer to Fig. 2. Fig. 2 is a top view of Fig. 1. Among fuses 1¾ 1 4 0, there are usually a plurality of fuse structures 2 i 〇, 2 2 〇, 2 3 〇, each The fuse structure includes the Mo layer, the conductor plug 30, and the M1 layer. Among them, the solid line indicates the layer M1 'and the dotted line indicates the layer μ, and each fused silk structure has its own fuse region 11 °. For example, when the laser beam 29 is irradiated on the fuse 527695 V. Description of the invention (3) The layer 220 of the structure 220 located in the predetermined fusing area 110, due to the misalignment of the laser beam 290 or the scattering of laser heat As a result, the M 0 layer adjacent to the dissolved filament structure 2 1 0, 2 3 0 is damaged by thermal shock, for example, a crack is generated, and the product is subjected to high temperature and high humidity accelerated stress testing. Failure (HAST Fail), and reduction in product reliability and yield. [Summary of the Invention] In view of this, the object of the present invention is to provide a highly reliable fuse structure, in particular, to ensure that the conductor plug is protected from external air erosion, and during the laser blow process. , To avoid damage to the adjacent fuse structure. According to the above object, the present invention provides a highly reliable fuse structure including: (a) a substrate having a predetermined fuse region on the substrate; (b) a first conductor layer formed on part of the substrate; A first insulating layer is formed on the substrate and the first conductor layer; (d) a second conductor layer is formed on a portion of the first insulating layer including the predetermined fuse region and a portion of the second conductor The side below the layer is a corresponding overlapping part of the first conductor layer; (e) at least one conductor plug passes through the first insulation layer to electrically connect the first conductor layer and the second conductor layer a second An insulating layer 'formed on part of the first insulating layer and extends to part of the second conductor f' is used to ensure that the conductor plug is protected from outside air erosion; and (g) a third conductor layer is formed on the On the second insulation layer. In addition, the present invention also proposes a fuse window. The fuse window has a plurality of wire-refining structures, and each of the fuse structures includes: (a)-a base, the _

W695 發明說明(4) _ 基底上具有—"箱a 部分該基底上;、_斷區域;(b) 一第一導體層,形成於 一導體層上;(d)C_第一絕緣層,形成於該基底與該第 熔斷區域之部分嗜一導體層,形成於位於包括該預定 下方側係相對應°重聂;2 :上:並且部分該第二導體廣 插塞,穿過該第一且。卩刀該第一導體層;(e)至少一導體 該第二導體層;邑緣層,用以電性連接該第一導體層與 緣層上,並延伸$都一 v第二絕緣層,形成於部分該第〆絕 插塞避免外氣侵蝕::第二導體一層上1以確保該導體 二絕緣層上。发中# (g) 一第二導體層,形成於該第 的該預定熔斷區域? 2 ^窗内的該等熔絲結構彼此有各自 觸,並且每一該熔::絲結構彼此之間不作電性接 應相鄰該等熔•"士 ;盖:巾的該第二導體層的兩側,係對 體層。 4〜構中的該等第二絕緣層以及該等第三^ 本發明的熔絲結構特徵在於: (a)由於本發明 二絕緣層於部分兮第的炫绍絲結構比習知結構更加上一層第 體声上,如此第一緣層上,並延伸至部分該第二導 的i賴性。 保該導體插塞避免外氣侵蝕而提昇產品 雷射光照射位在笨二成—層第二導體層。其用意在於:當 够-,曾二a 士 ’、 溶絲結構的位於該預定溶斷區域之兮 七一户a 0、,其相鄰熔絲結構的該第三導體層能夠阻^ 或吸收多餘的雷射能量,使得相鄰料結構不會受^撞W695 Description of the invention (4) _ The substrate has — " box a on the substrate; and _ break area; (b) a first conductor layer formed on a conductor layer; (d) C_ first insulating layer A part of the first conductor layer formed on the base and the first fuse region is formed on the corresponding side including the predetermined lower side; 2: upper: and part of the second conductor wide plug passes through the first One. Stabbing the first conductor layer; (e) at least one conductor and the second conductor layer; an edge layer for electrically connecting the first conductor layer and the edge layer, and extending the first insulation layer to the second insulation layer, Formed on part of the first insulation plug to prevent outside air erosion: the second conductor is on one layer to ensure that the conductor is on the two insulation layers. ## In the hair, a second conductor layer is formed in the predetermined fuse region of the first conductor layer. 2 ^ The fuse structures in the window have their own contact with each other, and each of the fuses :: the fuse structures are not electrically connected to each other and the fuses are adjacent to each other. &Quot;Cap; the second conductor layer of the towel The two sides are opposite to the body layer. The second insulation layer and the third structure in the structure of the present invention are characterized by: (a) Because the second insulation layer of the present invention is partly more brilliant than the conventional structure One layer of the first body sound, so the first edge layer, and extends to part of the second lead. Ensure that the conductor plug avoids external air erosion and enhances the product. The laser light is irradiated on the second conductor layer. Its purpose is: when it is enough, the first fuse layer of the fuse structure is located in the predetermined dissolution area, and the third conductor layer of the adjacent fuse structure can block or absorb it. Excessive laser energy so that adjacent material structures will not be hit

527695 五、發明說明(5) 害,如此可提昇產品的信賴性。 圖式之簡單說明 第1圖係習知的溶絲結構剖面圖。 第2圖係第1圖的上視圖。 第3圖係本發明第一實施例的熔絲結構剖面圖 第4圖係第3圖的上視圖。 第5圖係第4圖的E-E,切線處之剖面圖。 符號之說明 1〇〇、300〜絕緣層基底 Μ 0、Μ1〜導體層; 130、350〜導體插塞; 140、380〜熔絲窗; 320〜第一導體層; 340〜第二導體層; 370〜第三導體層; 210 、 220 ' 230 、 410 290、490〜雷射光束。 110、310〜預定熔斷區域 1 2 0〜氧化層; 1 31〜外氣; 150、390〜鈍化層; 330〜第一絕緣層; 3 6 0〜第二絕緣層; 420、430〜熔絲結構; 實施例 以下利用第3圖及第4圖來說明本發明實施例。第3圖 係本發明實施例的熔絲結構剖面圖。第4圖係第3圖的上視 圖。其中第3圖係從第4圖之d-D,切線處來看。527695 Fifth, the invention description (5) harm, which can improve the reliability of the product. Brief Description of the Drawings Fig. 1 is a cross-sectional view of a conventional melting wire structure. Figure 2 is a top view of Figure 1. Fig. 3 is a sectional view of the fuse structure according to the first embodiment of the present invention. Fig. 4 is a top view of Fig. 3. Fig. 5 is a cross-sectional view taken along the line E-E in Fig. 4. Explanation of symbols 100, 300 ~ insulating layer substrate M 0, M1 ~ conductor layer; 130, 350 ~ conductor plug; 140, 380 ~ fuse window; 320 ~ first conductor layer; 340 ~ second conductor layer; 370 ~ third conductor layer; 210, 220 '230, 410 290, 490 ~ laser beam. 110, 310 ~ predetermined fuse area 1 2 0 ~ oxide layer; 1 31 ~ outside air; 150, 390 ~ passivation layer; 330 ~ first insulation layer; 3 6 0 ~ second insulation layer; 420, 430 ~ fuse structure EXAMPLES Hereinafter, examples of the present invention will be described using FIG. 3 and FIG. 4. Fig. 3 is a sectional view of a fuse structure according to an embodiment of the present invention. Figure 4 is a top view of Figure 3. Among them, the third figure is viewed from d-D, tangent of the fourth figure.

0548-7018TWF ; 90039 » Jacky.ptd 第9頁 527695 五、發明說明(6) 首先,凊參照第3圖,此圖顯示一例如由p £ — τ £ 〇 s氧化 矽構成之絕緣層基底300,該基底上具有一預定熔斷區域 3 1 0,在該基底3 0 〇表面形成有一例如是鎢金屬材料構成之 第一導體層320。然後在該基底300與該第一導體層32〇上 形成有一第一絕緣層330,而該第一絕緣層33〇例如是厚度 約0.4//Π1的二氧化矽層。 又 仍請參照第3圖,然後在位於包括該預定熔斷區域31〇 之部分該第一絕緣層330上形成有一第二導體層34〇,而該 第一導體層3 4 0例如疋由紹、|呂銅合金或複晶石夕材料構 成’並且部分該第二導體層3 4 〇下方侧係相對應重疊 (overlap)部分該第一導體層32〇。 然後,仍請參照第3圖,形成至少一例如是鎢插塞的 導體插塞350,穿過該絕緣層330,用以電性連接該第ι一導 體層320與該第二導體層340。 仍請參照第3圖,一第二絕緣層36〇 ,形成於部分該第 一絕緣層330上,並延伸至部分該第二導體層34〇上,用以 確保該導體插塞350避免外氣侵蝕,而該第二絕緣層36〇例 如是厚度約0,8/zm的二氧化;ε夕層。 仍請參照第3圖,一第三導體層37〇,形成於該第二絕 緣層360上,而該第三導體層37〇例如是由鋁、鋁銅合金或 複晶矽材料構成。另外在該第三導體層3 7 〇底部可以更包 含有一金屬阻障層(未圖示),例如是TiN層。 再者,前述之熔絲結構,其中在該第二導體層3 4 〇和 該第三導體層370上,可更包括一具有熔絲窗開口38〇的鈍0548-7018TWF; 90039 »Jacky.ptd Page 9 527695 V. Description of the Invention (6) First, referring to Figure 3, this figure shows an insulating layer substrate 300 composed of, for example, p £ — τ £ 〇s silicon oxide, The substrate has a predetermined fuse region 3 1 0, and a first conductor layer 320 made of, for example, a tungsten metal material is formed on the surface of the substrate 3 0 0. A first insulating layer 330 is formed on the substrate 300 and the first conductor layer 32. The first insulating layer 330 is, for example, a silicon dioxide layer having a thickness of about 0.4 // Π1. Still referring to FIG. 3, a second conductor layer 34o is formed on the first insulating layer 330, which is located in a portion including the predetermined fuse region 31o, and the first conductor layer 340 is, for example, You Shao, The copper copper alloy or polycrystalline spar material is composed of 'and a part of the lower side of the second conductor layer 3 4 0 overlaps a part of the first conductor layer 32 0. Then, referring still to FIG. 3, at least one conductive plug 350, such as a tungsten plug, is formed and passed through the insulating layer 330 to electrically connect the first conductive layer 320 and the second conductive layer 340. Still referring to FIG. 3, a second insulating layer 36 is formed on a portion of the first insulating layer 330 and extends to a portion of the second conductive layer 34o to ensure that the conductor plug 350 avoids outside air. Eroded, and the second insulating layer 36 is, for example, a thickness of about 0.8 / zm of dioxide; an ε layer. Still referring to FIG. 3, a third conductive layer 37o is formed on the second insulating layer 360, and the third conductive layer 37o is made of, for example, aluminum, an aluminum-copper alloy, or a polycrystalline silicon material. In addition, a metal barrier layer (not shown), such as a TiN layer, may be further included at the bottom of the third conductor layer 370. Furthermore, in the foregoing fuse structure, the second conductor layer 340 and the third conductor layer 370 may further include a passivation having a fuse window opening 38o.

527695527695

化層390,而該熔絲窗(fuse wind〇w)開口 38〇係用以露出 包括位於該預定熔斷區域3 1()的該第二導體層3 4〇與至&少部 分的該第三導體層370。其中該鈍化層390例如是由 PE-TEOS氧化矽或氮化矽所構成。 接著請參照第4圖。第4圖係複數個第3圖的上視圖。 在該熔絲窗380 (fuse window)内通常有複數個熔絲結構 410、42 0、430,而且每一熔絲結構有各自的該熔斷°區 310。其中部分該第二導體層34〇係對應該熔斷區31〇。而 該第一導體層320係受到該第三導體層37〇的保護。例如Layer 390, and the fuse wind opening 38 is used to expose the second conductor layer 3 40 and the & Three conductor layers 370. The passivation layer 390 is made of PE-TEOS silicon oxide or silicon nitride, for example. Then refer to Figure 4. Figure 4 is a top view of a plurality of Figures 3. There are usually a plurality of fuse structures 410, 420, 430 in the fuse window 380, and each fuse structure has its own fuse region 310. Some of the second conductor layers 34o correspond to the fused region 31o. The first conductor layer 320 is protected by the third conductor layer 370. E.g

當雷射光束490照射在該熔絲結構4 2〇之位於預定熔斷區 310的该第二導體層34〇時,由於雷射光束490多餘的能量 會被相鄰的該等熔絲結構41〇、43〇之該第三導體層37〇吸 收,使得相鄰的該等熔絲結構41〇、43〇之該等第一導體層 32 0、320受到保護而不會被損害,而能提昇產品可靠度和 良率。這裡要特別強調的是,各熔絲結構41〇、42〇、43〇 的該第二導體層370可以是像第4圖所示般地一整片同時形 成而相互連接,這裡要注意的是,該第三導體層370與該 第一、二導體層320、340之間有該第二絕緣層360而互相 絕緣,所以各熔絲結構41〇、42〇、43〇之間不會有短路 情形發生。When the laser beam 490 irradiates the second conductor layer 34o of the fuse structure 420 located in the predetermined fuse region 310, the excess energy of the laser beam 490 will be absorbed by the adjacent fuse structures 41. The absorption of the third conductor layer 370 of 430, the first conductor layers 302, 320 of the adjacent fuse structures 410, 430 are protected from being damaged, and the product can be improved. Reliability and yield. It is particularly emphasized here that the second conductor layer 370 of each fuse structure 41 o, 42 o, and 43 o can be formed as a whole and connected to each other at the same time as shown in FIG. 4. It should be noted here that The third conductor layer 370 and the first and second conductor layers 320 and 340 are insulated from each other by the second insulating layer 360, so there will be no short circuit between the fuse structures 41, 42, and 43. The situation happened.

第5圖係從第4圖之E_E,切線處來看的剖面圖。從第5 圖亦可知,該,熔絲結構410、420、430彼此之間不作電 性接觸,並且每一該熔絲結構41〇、42〇、43〇中的該第二 導體層340的兩側,係對應相鄰該等熔絲結構410、420、FIG. 5 is a cross-sectional view taken along the line E_E in FIG. 4. It can also be seen from FIG. 5 that, the fuse structures 410, 420, and 430 do not make electrical contact with each other, and two of the second conductor layer 340 in each of the fuse structures 41, 42, 40, 43. Side, corresponding to the adjacent fuse structures 410, 420,

0548-7018TWF ; 90039 ; Jacky.ptd 第11頁 527695 五、發明說明(8) 430中的該等第二絕緣層360以及該等第三導體層370。當 雷射光束490照射在該熔絲結構420之位於預定熔斷區31〇 的該第二導體層340時,由於雷射光束490多餘的能量會被 相鄰的該等熔絲結構41〇、43〇之該第三導體層37〇吸收, 使得相鄰的該等熔絲結構410、430之該等第一導體層 32 0、320受到保護而不會被損害,而能提昇產品可靠度和 良率。還有這裡要強調的是,該第二絕緣層3 6 〇係厚度約 0.8/zm的二氧化矽層,因此若該第三導體層37〇被熔毀 時,也不會損傷到該第一絕緣層33 〇,而能夠確時地 該第一導體層320。 "0548-7018TWF; 90039; Jacky.ptd Page 11 527695 V. The second insulating layer 360 and the third conductor layer 370 in the description of the invention (8) 430. When the laser beam 490 irradiates the second conductor layer 340 of the fuse structure 420 located in the predetermined fuse region 31o, the excess energy of the laser beam 490 will be absorbed by the adjacent fuse structures 41o, 43 〇The third conductor layer 37 absorbs, so that the adjacent first fuse layers 410, 430 and the first conductor layers 320, 320 are protected from being damaged, which can improve product reliability and yield. . It should also be emphasized here that the second insulating layer 36 is a silicon dioxide layer with a thickness of about 0.8 / zm. Therefore, if the third conductive layer 37 is melted, the first conductive layer 37 will not be damaged. The insulating layer 33 〇, and the first conductor layer 320 can be timed. "

[本發明之優點及特徵] 本發明的高信賴性熔絲結構之優點及特徵在於·· (a)由於本發明的熔絲結構比習知結構更加上一層第 二絕緣層360於部分該第一絕緣層33〇上,並延伸至部^分3 上’如此可確保該導體插塞35()避免夕 蝕而提昇產品的信賴性。 上Λ Λ 的該卜導體層32G和該導體插塞35( 二;緣層36°上,更形成-層第三導體層370 在於:當雷射光490照射位在某一[Advantages and characteristics of the present invention] The advantages and characteristics of the high-reliability fuse structure of the present invention are: (a) Because the fuse structure of the present invention has a second insulating layer 360 in part than the conventional structure, An insulation layer 33 is formed and extends to part 3 ′, so that the conductor plug 35 () can be prevented from being corroded and the reliability of the product can be improved. On the Λ Λ, the Bu conductor layer 32G and the conductor plug 35 (2; on the edge layer 36 °, a third layer of the third conductor layer 370 is formed: when the laser light 490 is irradiated at a certain position

該預定熔斷區域310之該第二導體層34。時:的7 構的該第三導體層370能夠阻擋或吸收多餘的雷旦、糸, 使侍相鄰熔絲結構的該第一導體層3 2 〇和該奸^ ^ 會受到傷害,如此可提昇產品的信賴性。 插塞35〇The second conductive layer 34 of the predetermined fuse region 310. Time: The third conductor layer 370 of 7 structure can block or absorb the excess thunder and thorium, so that the first conductor layer 3 2 〇 and the ^^^ of the adjacent fuse structure will be injured, so it can be damaged. Improve product reliability. Plug 35

527〇y^527〇y ^

Claims (1)

527695 六、申請專利範圍 1. 一種高信賴性的熔絲結構,包括: 一基底,該基底上具有一預定溶斷區域; 一第一導體層,形成於部分該基底上; 一第一絕緣層,形成於該基底與與該第一導體層上; 一第二導體層,形成於位於包括該預定熔斷區域之部 分該第一絕緣層上,並且部分該第二導體層下方側係相對 應重疊部分該第一導體層; 至少一導體插塞,穿過該第一絕緣層,用以電性連接 該第一導體層與該第二導體層; 一第二絕緣層,形成於部分該第一絕緣層上,並延伸 至部分該第二導體層上,用以確保該導體插塞避免外氣侵 蝕;以及 一第三導體層,形成於該第二絕緣層上。 2. 如申請專利範圍第1項所述之高信賴性的熔絲結 構’其中該第一導體層係嫣金屬材料。 3. 如申請專利範圍第1項所述之高信賴性的熔絲結 構,其中該第二導體層係鋁、鋁銅合金或複晶矽材料。 4. 如申請專利範圍第1項所述之高信賴性的熔絲結 構,其中該第三導體層係鋁、鋁銅合金或複晶矽材料。 5. 如申請專利範圍第4項所述之高信賴性的熔絲結 構,其中在該第三導體層底部可更包括形成有一阻障層。 6. 如申請專利範圍第5項所述之高信賴性的熔絲結 構,其中該阻障層係T i N層。 7. 如申請專利範圍第1項所述之高信賴性的熔絲結527695 VI. Application for patent scope 1. A highly reliable fuse structure, comprising: a substrate having a predetermined dissolution region on the substrate; a first conductor layer formed on part of the substrate; a first insulating layer Is formed on the base and the first conductor layer; a second conductor layer is formed on a portion of the first insulation layer including the predetermined fusing area, and a portion of the second conductor layer below the side corresponds to overlap Part of the first conductor layer; at least one conductor plug passing through the first insulation layer to electrically connect the first conductor layer and the second conductor layer; a second insulation layer formed on part of the first conductor layer An insulating layer and extending to a portion of the second conductor layer to ensure that the conductor plug is protected from outside air erosion; and a third conductor layer is formed on the second insulating layer. 2. The highly reliable fuse structure as described in item 1 of the scope of the patent application, wherein the first conductor layer is a metallic material. 3. The highly reliable fuse structure according to item 1 of the patent application scope, wherein the second conductor layer is made of aluminum, aluminum-copper alloy, or polycrystalline silicon material. 4. The highly reliable fuse structure according to item 1 of the patent application scope, wherein the third conductor layer is made of aluminum, aluminum-copper alloy, or polycrystalline silicon material. 5. The highly reliable fuse structure according to item 4 of the scope of patent application, wherein a barrier layer is further formed at the bottom of the third conductor layer. 6. The highly reliable fuse structure as described in item 5 of the patent application scope, wherein the barrier layer is a T i N layer. 7. High-reliability fuse junction as described in the first patent application 0548-7018TWF ; 90039 ; Jacky.ptd 第14頁 527695 六、申請專利範圍 構,其中該第一絕緣層係二氧化矽層。 8. 如申請專利範圍第1項所述之高信賴性的熔絲結 構,其中該第二絕緣層係二氧化矽層。 9. 如申請專利範圍第1項所述之高信賴性的熔絲結 構,其中該第二絕緣層的厚度大抵是0. 8 // m。 1 0.如申請專利範圍第1項所述之高信賴性的熔絲結 構’其中該導體插塞係鶴插塞。 11.如申請專利範圍第1項所述之高信賴性的熔絲結 構,其中在該第二導體層和該第三導體層上,更包括一具 有開口的鈍化層,而該開口係用以露出包括位於該預定熔 斷區域的該第二導體層與至少部分該第三導體層。 1 2.如申請專利範圍第11項所述之高信賴性熔絲結 構,其中該鈍化層係PE-TEOS氧化矽或氮化矽層。 1 3. —種熔絲窗,該熔絲窗内具有複數個熔絲結構, 而各該熔絲結構包括: 一基底,該基底上具有一預定熔斷區域; 一第一導體層,形成於部分該基底上; 一第一絕緣層,形成於該基底與與該第一導體層上; 一第二導體層,形成於位於包括該預定熔斷區域之部 分該第一絕緣層上,並且部分該第二導體層下方侧係相對 應重疊部分該第一導體層; 至少一導體插塞,穿過該第一絕緣層,用以電性連接 該第一導體層與該第二導體層; 一第二絕緣層,形成於部分該第一絕緣層上,並延伸0548-7018TWF; 90039; Jacky.ptd Page 14 527695 6. Patent application structure, wherein the first insulating layer is a silicon dioxide layer. 8. The highly reliable fuse structure according to item 1 of the patent application scope, wherein the second insulating layer is a silicon dioxide layer. 8 // m。 9. The high reliability fuse structure as described in the first patent application scope, wherein the thickness of the second insulating layer is approximately 0.8 // m. 10. The highly reliable fuse structure as described in item 1 of the scope of the patent application, wherein the conductor plug is a crane plug. 11. The highly reliable fuse structure according to item 1 of the scope of patent application, wherein the second conductor layer and the third conductor layer further include a passivation layer having an opening, and the opening is used for The exposure includes the second conductor layer and at least a portion of the third conductor layer located in the predetermined fusing area. 1 2. The high-reliability fuse structure according to item 11 of the scope of patent application, wherein the passivation layer is a PE-TEOS silicon oxide or silicon nitride layer. 1 3. A fuse window, the fuse window having a plurality of fuse structures therein, each of the fuse structures including: a substrate having a predetermined fuse region on the substrate; a first conductor layer formed on a portion On the substrate; a first insulation layer formed on the substrate and the first conductor layer; a second conductor layer formed on a portion of the first insulation layer including the predetermined fuse region, and a portion of the first insulation layer The lower sides of the two conductor layers are correspondingly overlapping portions of the first conductor layer; at least one conductor plug passes through the first insulation layer to electrically connect the first conductor layer and the second conductor layer; a second An insulating layer formed on part of the first insulating layer and extending 0548-7018TWF ; 90039 ; Jacky.ptd 第15頁 527695 六、申請專利範圍 至部分該第二導體層上,用以確保該導體插塞避免外氣侵 名虫;以及 一第三導體層,形成於該第二絕緣層上; 其中該熔絲窗内的該等熔絲結構彼此有各自的該預定 熔斷區域,該等熔緣結構彼此之間不作電性接觸,並且每 一該熔絲結構中的該第二導體層的兩侧,係對應相鄰該等 熔絲結構中的該等第二絕緣層以及該等第三導體層。 1 4.如申請專利範圍第1 3項所述之熔絲窗,其中該第 一導體層係鎢金屬材料。 1 5.如申請專利範圍第1 3項所述之熔絲窗,其中該第 二導體層係鋁、鋁銅合金或複晶矽材料。 1 6.如申請專利範圍第1 3項所述之熔絲窗,其中該第 三導體層係鋁、鋁銅合金或複晶矽材料。 1 7.如申請專利範圍第1 6項所述之熔絲窗,其中在該 第三導體層底部可更包括形成有一阻障層。 1 8.如申請專利範圍第1 7項所述之熔絲窗,其中該阻 障層係T i N層。 1 9.如申請專利範圍第1 3項所述之熔絲窗,其中該第 一絕緣層係二氧化$夕層。 2 0.如申請專利範圍第1 3項所述之熔絲窗,其中該第 二絕緣層係二氧化矽層。 2 1.如申請專利範圍第1 3項所述之熔絲窗,其中該第 二絕緣層的厚度大抵是0. 8 // m。 2 2.如申請專利範圍第1 3項所述之熔絲窗,其中該導0548-7018TWF; 90039; Jacky.ptd Page 15 527695 VI. The scope of application for patents covers part of the second conductor layer to ensure that the conductor plug avoids invasion by outside air; and a third conductor layer is formed on On the second insulating layer; wherein the fuse structures in the fuse window have their respective predetermined fuse regions, the fuse edge structures do not make electrical contact with each other, and each of the fuse structures The two sides of the second conductor layer correspond to the second insulation layer and the third conductor layer in the adjacent fuse structures. 14. The fuse window as described in item 13 of the scope of patent application, wherein the first conductor layer is a tungsten metal material. 1 5. The fuse window as described in item 13 of the scope of patent application, wherein the second conductor layer is made of aluminum, aluminum-copper alloy or polycrystalline silicon material. 16. The fuse window according to item 13 of the scope of patent application, wherein the third conductor layer is made of aluminum, aluminum-copper alloy, or polycrystalline silicon material. 1 7. The fuse window according to item 16 of the scope of patent application, wherein a barrier layer is further formed on the bottom of the third conductor layer. 1 8. The fuse window as described in item 17 of the scope of patent application, wherein the barrier layer is a T i N layer. 19. The fuse window according to item 13 of the scope of patent application, wherein the first insulating layer is a dioxide layer. 20. The fuse window according to item 13 of the scope of patent application, wherein the second insulating layer is a silicon dioxide layer. 2 1. The fuse window as described in item 13 of the scope of patent application, wherein the thickness of the second insulating layer is approximately 0.8 // m. 2 2. The fuse window as described in item 13 of the scope of patent application, wherein the guide 0548-7018TWF ; 90039 ; Jacky.ptd 第16頁 5276950548-7018TWF; 90039; Jacky.ptd p. 16 527695 0548-7018TWF ; 90039 ; Jacky.ptd0548-7018TWF; 90039; Jacky.ptd 第17頁Page 17
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