TW527648B - Single wafer LPCVD apparatus - Google Patents

Abstract

Disclosed is a single wafer LPCVD apparatus. The single wafer LPCVD apparatus comprises: a vacuum chamber having an upper part sealed by a quartz dome, the vacuum chamber receiving a single wafer loaded therein; a bell jar having a dome-shaped inner wall, covering the quartz dome, and spaced by a selected interval from the quartz dome; a dome-shaped plasma electrode established between the bell jar and the quartz dome; an RF power supply for applying an RF power to the dome-shaped plasma electrode; an adiabatic wall provided on the entire inner wall of the bell jar; a sheath heater having a heater wire and an insulator for covering the heater wire, the sheath heater being attached and established to a surface of the adiabatic wall in a shape of a coil; and a cooling pipe established in a wall of the bell jar. Temperature uniformity within the vacuum chamber is enhanced and the manufacture of a high-temperature heater for hot processing is unnecessary. A dome-shaped plasma electrode is replaced with the metal tube, so that heat transfer from the sheath heater into the vacuum chamber can be carried out very efficiently as well as inductively coupled plasma can be obtained.

Description

527648 V. Description of the invention (1) 1¾ Background 1. The field of invention is not only related to single-wafer low-pressure chemical vapor deposition equipment, but also uses the process ϊ = to perform the thermal process, and also can be used in the space of the vacuum chamber with electric water heaters. Has a uniform temperature distribution. 2 · Description of previous techniques Gai Bian said that batch-type chemical vapor deposition (㈣) was performed to improve the yield. In batch-type chemical vapor deposition, in single-reverse batches: two-crystal Γ, however, due to the rod deposition in which wafers are arranged close to and vertically, the reaction gas cannot sufficiently meet certain positions of the wafer. Contact, which is detrimental to the uniformity of film deposition. In response:? Ask the stomach, propose a low-pressure chemical vapor phase, which is different from the traditional atmospheric chemical vapor deposition of the conventional pressure-deposited thin film and the roll pressure deposition film, which is low; Thin film deposition is performed at 1 to 50 torr. In dry chemical phase deposition, chemical vapor deposition is performed at a low pressure as described above, and thus the average free path of the reaction gas becomes longer. Therefore, even f batches In the low-pressure chemical vapor deposition of the sub-type, the reaction gas can also pass through the wafer sufficiently, thereby improving the uniformity and coverage of the thin film deposition. In this way, "contact holes or trenches can be filled without vacancy. Pore. γ β Therefore, although the film deposition rate of low pressure chemical vapor deposition is lower than that of atmospheric pressure chemical vapor deposition, due to the aforementioned advantages, low pressure chemical vapor deposition is still mainly used in the actual semiconductor device manufacturing process. Page 5151-4676-PF (N); ahddub.ptd 527648 V. Description of the invention (2) 〇 Recently, the trend deposition of lx large wafers is used to replace batch low-pressure chemical vapor deposition. The average sentence and coverage are. In the single crystal = H-step improvement, the single wafer is cracked and loaded to a low pressure chemical vapor deposition device = a vapor deposition diagram. Fig. I is a schematic diagram illustrating a conventional single-wafer low-pressure chemical vapor deposition system. Referring to Fig. 1, a vacuum chamber (not shown) is covered with U = 20 J and can be sealed. The quartz dome 20 is covered with: port = jar) 30. A dome-shaped electric 40 ′ is loaded between the bismuth port 30 and the quartz dome 20, which can supply radio frequency power from the radio frequency power supply 50 to: Plasma is generated within 20 minutes. In Shiyang

Along the side wall of Minglikou 30, AJ Peregrine son-in-law's insulation wall 34 and insulation wall ", the insulation wall is located outside the insulation wall 34, and a coil-shaped insulation is installed between the insulation wall 32 and the insulation wall ^ The heating wire 36 of the wall 34. The thermal insulation wall can prevent heat from being radiated from the heating wire 36 and transmitted to the outside. When the heat is generated, the current flows through the heating wire 36, and the heating wire 36 generates heat due to resistance. Therefore, an insulating wall must be installed to Avoid the radio frequency sound generated in the dome-type plasma electrode 40 from being transmitted to the heating wire 36. As described above, the conventional single-wafer low-pressure chemical vapor deposition device has an integral vertical structure 'this structure has a quartz dome 2 wound around it Heating wire 36 on the side of 〇. Therefore, the distance between the heating wire 36 and the quartz dome 20 gradually increases from the shoulder of the quartz circle 'top 20' and no 埶% is added on the entire quartz dome 20. Therefore 'The temperature distribution in the real cell is not uniform, and the &

527648 V. Description of the invention (3) The heating wire needs to be adjusted to a very high temperature, so it is almost impossible to tolerate the heating wire of this heating process, and its price is quite high. ~ SUMMARY OF THE INVENTION Therefore, the purpose of presenting the present invention is to provide a single crystal process using thermal technology, which can also be used in real applications. The low pressure of the low-pressure chamber is to solve the previously known problems. Therefore, the heating technology, rather than the conventional two-phase deposition device, can be used in the heating chamber and the plasma process. It is divided into radio frequency power insulation walls, and the device has a coil standing on the bell mouth. The other includes: _ room receiving device, which is separated by the bell mouth; a vapor deposition vacuum chamber, which is covered with a quartz dome-shaped power supply, Provided in the shape of the bell heating wire. The shape is a vacuum chamber, which is cut into a single crystal covered with a thermal insulation wall of quartz. The advantages of this low-pressure chemical are included in this device. The vacuum chamber is equipped with a dome-shaped inner wall, and the bell gap is separated from the quartz dome. ; A British dome; a radio frequency power; a (sheath) heat and a sheath heating a cooling tube, according to the device, the device part, this vacuum has a dome-shaped inner wall gap and a quartz dome device The above purpose can be achieved. Others have a single wafer sealed by a quartz dome; a bell mouth with a dome, and a selected interstitial plasma electrode built on the bell mouth and the stone to oppose the dome-shaped plasma. The entire inner wall of the electrode supply port; a sheath and an insulator covering the heating wire, attached to the surface of the insulation wall; and a wafer low pressure chemical vapor deposition with an early wafer sealed by a quartz dome; a Bell mouth, dome-shaped, and provided by a selected inner compartment on the entire inner wall of the bell mouth 5151-4676-PF (N); ahddub.ptd Page 8 527648 V. Description of the invention (4) on the top Device with heating wire and a covering heating wire An insulator, and attach the sheath heater in the shape of a coil to the surface of the insulation wall; a metal tube is used as the plasma electrode, and the metal tube surrounds the non-conductor part of the sheath heating wire; a radio frequency power supply. A cooling tube to supply radio frequency power to the metal tube; and a cooling tube built in the wall of the bell mouth. The following detailed description may refer to the accompanying drawings to present preferred embodiments of the present invention. Fig. 2 is a schematic diagram illustrating a single wafer low pressure chemical vapor phase > child product device according to a first embodiment of the present invention. Referring to FIG. 2, a vacuum chamber 122 is composed of a lower chamber 122 and a quartz dome 120. The lower chamber 1 2 2 is opened at an upper portion thereof, and is covered with a quartz dome 12 20. A wafer pedestal 151 is installed in the vacuum chamber 122, a wafer 152 is loaded on the wafer pedestal 151, and a heater (not shown) is installed in the wafer pedestal 151 to heat the wafer. Circle 丨 5 2. The quartz dome 120 is covered by the bell mouth 130 and has an inner wall with the same dome shape as the quartz dome. The inner wall of the bell mouth 丨 30 is separated from the stone dome 120 by a predetermined gap, and the dome-shaped plasma electrode 410 is installed between the bell mouth 13 〇 and the quartz dome 120. The dome-shaped plasma electrode 140 applies radio frequency power from the radio frequency power supply 150 to generate electrocondensation within the quartz dome 200. A heat insulation wall 32 is established on the entire inner wall of the bell mouth 130, a sheath heater 135 is established in the heat insulation wall 132, and a cooling water inlet 137 and an outlet 138 are installed in the wall of the bell mouth 130. Cooling pipe (not shown), cooling

5151-4676-PF (N); ahddub.ptd 527648 V. Description of the invention (5) The official can avoid the heat generated by the sheath and the reinforced process to increase the yield of the plate to the outside. The appearance of the cooling pipe can be installed in the bell mouth 130 dome Piga: Λ device 135 surrounds the quartz body 134 in a lateral direction in the shape of a coil, and is insulated 134 by 7 线 ί line 136 and-covering the heating line 136, m /, + '_ / Line 1 36 The infrared rays need to pass through the insulator. It is best to include Mg0, which is shielded by the dome plasma electrode 140 from the edge body 134, and will not be transmitted to the heating wire. 136. 12π. Χ_ Mao Ming, because the sheath heating wire 1 30 is installed in a structure such as under the quartz dome & top, the heat can be evenly transmitted to the workshop under the quartz dome 1 20, so it is stronger than conventional The uniformity of the temperature in the vacuum chamber was achieved.摅 太 i & Know 1 ′ Install the heater on the shoulder away from the quartz dome; according to the present invention, the entire sheath heater 135 is installed adjacent to the quartz dome 12 to increase the heating efficiency. In particular, the non-conductor 134 shields the noise from the dome-shaped plasma electrode 140. Therefore, a sheath heater 135 'can be installed very close to the dome-shaped plasma electrode "0" to further enhance the efficiency of the addition. Therefore, It is not necessary to heat the heater in the wafer base 151 to a high temperature; in addition, there is no need to separately manufacture a high-temperature heater in a thermal process. FIGS. 3 and 4 show a single wafer according to a second embodiment of the present invention. Low & Unintended Chemical Vapor Deposition Device 'In Figs. 3 and 4, the same reference numbers as in Fig. 2 are used to designate elements having the same functions, and duplicate descriptions are omitted for the sake of convenience. # 3 and 4 'a single-wafer low-pressure chemical vapor deposition apparatus according to a second embodiment of the present invention' except that a metal tube serving as a plasma electrode is used.

527648 V. Description of the invention (6) Except for the K-top plasma electrode 1 40, they all have the same structure as in Fig. 2 and 70 pieces of metal tubes are installed. 4 〇a to surround the sheath heater 丨 3 5 insulator Examples of the use of the metal tube 140a may include a stainless steel tube. The sang sound from the metal & 1 4 〇a is shielded by the insulator 1 3 4 and will not be transmitted to the heating wire 13 6 ° When a dome-shaped plasma electrode is used, the heat of the sheath heater 135 Yes, it is not enough, the problem is transferred to the vacuum chamber covered by the dome-shaped plasma electrode 140, and the problem can be avoided according to the second embodiment of the present invention. In addition, the gold & 14a is arranged in a coil form around the quartz heater 120 along the sheath heater 135 to generate an inductive coupling plasma instead of a capacitive coupling plasma, and has a uniform and high density plasma. f According to the aforementioned single-wafer low-pressure chemical vapor deposition device of the present invention: 丄 can enhance the temperature uniformity in the vacuum chamber, and does not need to manufacture the same two heaters for the thermal process. The conductor of the bell mouth may have a dome shape different from the conventional one to reduce the volume and mass of the bell mouth. When a metal tube surrounding a sheath heater is used as an electric f electrode instead of a dome-shaped plasma electrode, heat is transmitted from the sheath to the vacuum chamber very effectively, and an inductively coupled plasma is obtained. Since the density of the inductor coupling capacitor is higher than the density of the capacitor coupling plasma, excellent process efficiency can be achieved. Although the preferred embodiment of the present invention has been disclosed for the sake of demonstration, those skilled in the art need to understand that various modifications, additions and substitutions can be made without departing from the scope and spirit of the scope of the patent application defined below.

5151-4676-PF (N); ahddub.ptd

Page 527 648 Brief Description of Drawings Figure 1 is a schematic diagram illustrating a conventional single wafer low pressure chemical vapor deposition apparatus, Figure 2 is a schematic diagram illustrating a first embodiment according to the present invention; and Figures 3 and 4 are exemplary according to the present invention A schematic diagram of a single wafer low pressure chemical vapor deposition apparatus of the second embodiment. Explanation of symbols 2 0 ~ Quartz dome; 3 2 ~ Insulation wall; 3 6 ~ Heating line; 50 ~ RF power supply 1 2 2 ~ Vacuum chamber; 1 3 2 ~ Insulation wall; 1 3 5 ~ Skin heater 1 37 ~ the entrance of cooling water; 1 40 ~ dome-shaped plasma electrodes 15 0 ~ RF power supply 15 2 ~ wafers. 3 0 ~ bell mouth; 3 4 ~ insulating wall; 40 ~ dome-shaped plasma electrode; 120 ~ quartz dome; 1 3 0 ~ bell mouth; 134 ~ insulator; 1 3 6 ~ heating wire; 1 3 8 ~ Cooling water outlet; 140a ~ metal tube; 1 5 1 ~ wafer base

5151-4676-PF (N); ahddub.ptd Page 12

Claims (1)

527648 VI. Application Patent Scope 1. A single wafer low pressure chemical vapor deposition device, comprising: a vacuum chamber having an upper portion sealed by a quartz dome, and the vacuum chamber receiving the vacuum chamber loaded in the vacuum chamber A single wafer; a bell mouth with a dome-shaped inner wall, and the bell mouth covers the quartz dome, and is separated from the quartz dome by a selected inner gap; a dome-shaped plasma electrode is built on the Between the bell mouth and the quartz dome; a radio frequency power supply to supply radio frequency power to the dome-shaped plasma electrode; a heat-insulating wall on the entire inner wall of the bell mouth; a sheath heating wire with a heating A wire and an insulator covering the heating wire, and attaching the sheathed heating wire in the shape of a coil to the surface of the thermal insulation wall; and a cooling pipe established in the wall of the bell mouth. 2. The single-wafer low-pressure chemical vapor deposition device according to item 1 of the application, wherein the insulator of the sheath heater is composed of MgO. 3. A single-wafer low-pressure chemical vapor deposition device, comprising: a vacuum chamber having an upper portion sealed by a quartz dome, and the vacuum chamber receiving a single wafer loaded in the vacuum chamber; A bell mouth with a dome-shaped inner wall, and the bell mouth covers the quartz dome, and is separated from the quartz dome by a selected inner gap; a heat-insulating wall on the entire inner wall of the bell mouth; The leather heating wire has a heating wire and an insulator covering the heating wire, and the sheath heating wire is attached to the surface of the heat insulation wall in the shape of a coil; 5151-4676-PF (N); ahddub.ptd Page 13 527648 VI. Patent application scope A metal tube is used as a plasma electrode and surrounds the non-conductor of the sheath heater; a radio frequency power supply to Radio frequency power is supplied to the metal pipe; and a cooling pipe is built in the wall of the bell mouth. 4. The single-wafer low-pressure chemical vapor deposition device according to item 3 of the patent application, wherein the insulator of the sheath heater is composed of MgO. 5. The single-wafer low-pressure chemical vapor deposition device of claim 3, wherein the metal pipe is composed of stainless steel. 5151-4676-PF (N); ahddub.ptd Page 14