TW523444B - Polishing head with a floating knife-edge - Google Patents

Polishing head with a floating knife-edge Download PDF

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Publication number
TW523444B
TW523444B TW91104433A TW91104433A TW523444B TW 523444 B TW523444 B TW 523444B TW 91104433 A TW91104433 A TW 91104433A TW 91104433 A TW91104433 A TW 91104433A TW 523444 B TW523444 B TW 523444B
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Taiwan
Prior art keywords
wafer
ring
floating
grinding
base
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TW91104433A
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Chinese (zh)
Inventor
Tzu-Shin Chen
Ming-Hsing Kao
Chin-Kun Lin
Wen-Chin Lin
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United Microelectronics Corp
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Priority to TW91104433A priority Critical patent/TW523444B/en
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Publication of TW523444B publication Critical patent/TW523444B/en

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A polishing head with a floating knife-edge mechanism includes a base, a retaining ring secured to the base defining a pocket area beneath the base, and a lower assembly floating within the pocket area via a diaphragm seal. The lower assembly includes a disk-shaped support plate having a plurality of apertures distributed in a center region of the support plate, a clamp ring used to secure the diaphragm seal along a rim region of the support plate, and the floating knife-edge mechanism positioned between the rim region and the center region of the support plate.

Description

523444 五、發明說明(1) 發明之領域 本發明係關於半導體製程中之化學機械研磨 (chemical mechanical polishing,以下簡稱為 CMP)領 域,尤指一種新穎之研磨頭(polishing head)設計,具有 一浮動阻隔環機構,可在研磨過程中獲得一較佳的研磨均 勻度(uni formi ty )。 背景說明 在製作積體電路的過程中,不可避免地需要在一晶圓 上沈積數層不同材質的堆疊結構,如此一來,造成晶圓表 面的不規則平面。不規則的晶圓表面將導致一些黃光製程 問題,例如聚焦深度(depth of focus,d〇F)不足以及圖 像轉移偏差。因此,在製作積體電路過程中,便經常需要 $平坦化技術,例如CMP技術,加以平坦化晶圓的不規則 表面。 傳統:CMP技術是將一待研磨晶圓面朝下壓於一研磨 之圓:Γ機1Γ二上在=研磨晶圓係由-稱^ ^ 晶圓以-固定轉軸旋轉,: 後藉由化學哎機诚方^ 應㈣以另-轉軸旋轉’然 金屬層研磨掉。目前 w行舌除的"冤層或 - f又業界歡迎的研磨頭是一種稱為浮 第5頁 523444 發明說明(2) 動(f 1 oat 1 ng)研磨頭的設計。此設計係利用一彈性膜 (flexibl二merabrane)將一晶圓支撐盤或背板(supp〇rt Pi ate)固定於一基座下方。在研磨階段,可利用氣體加壓 於晶圓支撐盤上,以平均分散施於晶圓晶背的下壓力 (downforce)° 傳統CMP製程常遇見的問題之一是發生在研磨完成 時’要將晶圓從研磨墊表面移走的晶圓轉移階段。這種困 難係由於研磨墊上的研磨漿料(slurry)與晶圓之間的黏 力’造成要將晶圓從研磨墊上移走十分困難。傳統的解決 方式係利用真空吸引(vacuum-chucking),將晶圓吸起, 以克服研磨漿料與晶圓表面的黏力。而為了避免在真空吸 引晶圓時,液體或空氣的跑入,通常在晶圓支撐盤的下表 面週邊都會設計有一向下延伸突出之圓形阻隔環結構。此 阻隔環的厚度一般約為1釐米左右,固定於晶圓支撐盤的 下表面週邊。當研磨完成時’此阻隔環可咬合(engage)晶 圓’形成良好的真空狀態’幫助研磨頭將晶圓移走。類似 的固定式阻隔環結構可以參考針對應用材科(AppHed Materials)公司的Mirra CMP系統所設計之ntanT研磨 頭。 雖然習知的固疋式阻隔環結構能夠在移動晶圓時,幫 助形成一良好的真空狀態,然而,固定式阻隔環結構卻在 研磨過程中產生一不能忽視的問題。這個問題又被泛稱為523444 V. Description of the invention (1) Field of invention The present invention relates to the field of chemical mechanical polishing (hereinafter referred to as CMP) in the semiconductor process, especially a novel polishing head design with a floating The barrier ring mechanism can obtain a better uniformity (uni formi ty) in the grinding process. Background Description During the fabrication of integrated circuits, it is unavoidable to deposit several layers of stacked structures of different materials on a wafer. As a result, the wafer surface is irregularly planar. Irregular wafer surfaces will cause some yellow light process problems, such as insufficient depth of focus (DOF) and image transfer deviation. Therefore, during the fabrication of integrated circuits, $ planarization technology, such as CMP technology, is often required to planarize the irregular surface of the wafer. Tradition: CMP technology is to press a wafer to be polished face down on a polished circle: Γ machine 1 Γ two on = polished wafer system by-weighed ^ ^ wafer is rotated with-fixed rotation axis: Hey machine Cheng Fang ^ should be rotated with another-rotation axis, then the metal layer is ground off. At present, the grinding head removed by "quote or -f and -f is popular in the industry is a type of polishing head called floating page 5 523444 invention description (2) moving (f 1 oat 1 ng) grinding head design. This design uses a flexible film (flexibl two merabrane) to fix a wafer support plate or back plate (support Piate) under a base. In the grinding stage, the gas can be pressurized on the wafer support plate to evenly distribute the downforce applied to the wafer backside. One of the problems often encountered in the traditional CMP process is that the Wafer transfer stage where the wafer is removed from the surface of the polishing pad. This difficulty is due to the adhesion between the polishing slurry on the polishing pad and the wafer, which makes it very difficult to remove the wafer from the polishing pad. The traditional solution is to use vacuum-chucking to suck up the wafer to overcome the adhesion between the polishing slurry and the wafer surface. In order to avoid the liquid or air from running in when the wafer is vacuum-sucked, a circular barrier ring structure is generally designed to extend downward on the periphery of the lower surface of the wafer support plate. The thickness of this barrier ring is generally about 1 cm, and it is fixed around the lower surface of the wafer support plate. When the polishing is completed, 'this barrier ring can engage the wafer' and form a good vacuum state 'to help the polishing head remove the wafer. Similar fixed barrier ring structure can refer to the ntanT grinding head designed for the Mirra CMP system of AppHed Materials. Although the conventional fixed-type barrier ring structure can help to form a good vacuum when moving the wafer, the fixed-type barrier ring structure creates a problem that cannot be ignored during the polishing process. This problem is commonly referred to as

523444 五、發明說明(3) 邊緣效應(edge effect)或快研磨帶效應(fast band effect),主要是由於固定式阻隔環結構在研磨時提供了 一較大的下壓力,造成晶圓靠近固定式阻隔環區域的研磨 速率較晶圓中心快。如此一來,導致研磨均勻度下降。 發明概述 因此,本發明之主要目的在於提供一種能夠提高研磨 均勻度的CMP設備。 本發明之另一目的在於提供一種新穎的研磨頭設計, 月b夠同時解決移動晶圓的問題’並獲得良好的研磨均勺 度。 一一 依據本發明之目的,本發明之較佳實·施例係揭露一種 用於CMP之研磨頭,其包含有:一基座(base); 一晶圓邊 緣壓覆環(retaining ring),固定於該基座上,其中該晶 圓邊緣壓覆環於該基座正下方定義出一口袋區域 area)’用來容納一晶圓(wafer);以及一下部組件 assembly)’ 經由一隔膜(diaphragm seal)浮動 (floating)於該口袋區域内。該下部組件包含有:一圓形 背板(plate)’具有複數個開孔分佈於该背板 之一中心區域(center region)内;一箝制環(clamp ring),用來將該隔膜緊鎖於該背板之一邊緣區域(rim523444 V. Description of the invention (3) The edge effect or fast band effect is mainly due to the fixed down ring structure providing a large downforce during grinding, which causes the wafer to be close to the fixed The polishing rate in the type of barrier ring region is faster than that of the wafer center. As a result, the polishing uniformity is reduced. SUMMARY OF THE INVENTION Therefore, a main object of the present invention is to provide a CMP apparatus capable of improving polishing uniformity. Another object of the present invention is to provide a novel polishing head design, which can simultaneously solve the problem of moving wafers' and obtain a good polishing uniformity. According to the purpose of the present invention, a preferred embodiment of the present invention discloses a polishing head for CMP, which includes: a base; a wafer edge retaining ring, Fixed on the pedestal, wherein the wafer edge lamination ring defines a pocket area (area) 'for accommodating a wafer; and a lower assembly) directly below the pedestal via a diaphragm ( A diaphragm seal is floating in the pocket area. The lower component includes: a circular plate having a plurality of openings distributed in a center region of the back plate; and a clamp ring for locking the diaphragm. In one edge area of the backplane (rim

523444523444

—浮動阻隔環機構,嵌於該背板之該中心 區域以及該邊緣區域之間。 當進行一 CMP研磨時,該背板可提供一接近平整的底 部以及一均勻的下壓力(d〇wnf〇rce)予該晶圓;而當研磨 完成時,該洋動阻隔環機構可提供一向下伸出之壓環結 構,以提昇真空吸引。 依?本發明之目的,本發明係揭露一種研磨頭的下部 ^ 八,3有·一支撐背板,具有複數個開孔分佈於該 二Ϊ Ϊ 一 I :區域内;—箝制環’用來將-隔膜緊鎖於該 域;以及一浮動阻隔環機·,喪於該背板 的中〜區域以及邊緣區域之間。 部以磨時,該背板可提供:接近平整的底 丨及均勻的下壓力予一晶圓。 本發明之:i: Φ 平整的背板底ΐ 在於能㈣研磨時,研磨頭可提供 -’因此能夠改善研磨均勻度。 明確i懂=,下,4月之上述以及其它目的、特徵與優點能更 細說明。 特舉一較佳實施例,配合所附圖示,作詳-A floating barrier ring mechanism is embedded between the center region and the edge region of the backplane. When performing a CMP polishing, the back plate can provide a nearly flat bottom and a uniform downforce (d0wnf0rce) to the wafer; and when the polishing is completed, the oceanic barrier ring mechanism can provide a consistent The protruding ring structure is lowered to improve the vacuum suction. according to? For the purpose of the present invention, the present invention discloses a lower part of a grinding head. There are three supporting plates with a plurality of openings distributed in the two Ϊ Ϊ I: area;-clamping ring 'is used to- The diaphragm is tightly locked in this area; and a floating barrier ring machine is lost between the middle ~ area and the edge area of the backplane. When grinding, the back plate can provide: a nearly flat bottom and uniform down pressure to a wafer. In the present invention: i: Φ The flat back plate bottom ΐ is capable of grinding, the grinding head can provide-', so the grinding uniformity can be improved. Clearly I understand =, the above and other purposes, features, and advantages of April can be explained in more detail. A preferred embodiment is described in detail with the accompanying drawings.

523444 五、發明說明(5) 發明之詳細說明 請參閱圖一,圖一為本發明研磨頭1 0 0之剖面示意 圖。如圖一所示,研磨頭10 0基本上包含有一殼體 (housing)102、一基座 104、一平衡機構(gimbal mechani sm) 1 06,一 加壓擒(loading chamber) 1 0 8 -—曰 曰曰 圓邊緣壓覆環(r e t a i n i n g r i n g ) 1 1 0以及一下部組件 (lower assembly)112。晶圓邊緣壓覆環lio於基座1〇4正 下方定義出一口袋區域(pocket area),用來容納一晶圓 1 0。上述之部份組件為組成一研磨頭之基本要件,例如殼 體102、基座10 4以及晶圓邊緣壓覆環11〇,而且為習知該 項技藝者所熟知。類似之研磨頭描述可以參考美國專利第 6, 244, 942號。 殼體102係與一傳動軸(drive shaft)相連接,並在研 磨階段以一轉動軸9 0帶動晶圓1〇朝一固定方向旋轉。轉動 轴9 0基本上在研磨階段約與一研磨墊(未顯示)呈垂直狀 態。穿過殼體1 0 2中心為一垂直孔1 3 0。此外,有三條管路 132、134以及136穿過殼體1〇2,用來氣壓式控制研磨頭 1〇〇給予晶圓10的下壓力。〇型環(〇 — 1^叩)138則可以在管 路之間形成氣密狀態。 基座104基本上是一硬質的環狀或盤狀體,位於殼體 102下方。在基座1〇4的底部有兩個由彈性薄膜14〇以及141523444 V. Description of the invention (5) Detailed description of the invention Please refer to FIG. 1, which is a schematic cross-sectional view of a grinding head 100 according to the present invention. As shown in Figure 1, the grinding head 100 basically includes a housing 102, a base 104, a gimbal mechani sm 106, and a loading chamber 1 0 8-- Said round edge retaining ring 1 1 0 and lower assembly 112 (lower assembly). A wafer edge lamination ring lio defines a pocket area directly under the base 104 to accommodate a wafer 10. Some of the components described above are the basic elements that make up a polishing head, such as the housing 102, the base 104, and the wafer edge lamination ring 110, and are well known to those skilled in the art. A similar description of the grinding head can be found in U.S. Patent No. 6,244,942. The housing 102 is connected to a drive shaft, and during the grinding stage, a rotating shaft 90 drives the wafer 10 to rotate in a fixed direction. The rotating shaft 90 is substantially perpendicular to a polishing pad (not shown) during the grinding stage. A vertical hole 1 3 0 passes through the center of the housing 102. In addition, there are three pipes 132, 134, and 136 that pass through the housing 102 and are used to pneumatically control the down force of the polishing head 100 to the wafer 10. The O-ring (0-1 ^ 叩) 138 can form a gas-tight state between the pipes. The base 104 is basically a rigid ring-shaped or disc-shaped body and is located below the housing 102. At the bottom of the base 104, there are two elastic films 14 and 141.

第9頁 523444 五、發明說明(6) 所定義出來的氣囊144以及145。彈性薄膜14〇以及141係分 別由一鎖於基座104之夾環(clamp ring) 142以及143固定 住。固定點148以及149則用來提供一軟管({16}^1)16 tube)的兩端接點。藉由管路134、管路13 6以及軟管(未顯 示)’即可分別控制氣囊1 4 4以及1 4 5的動作。管路1 3 4係外 接一第一泵浦(未顯示),以將氣體,例如空氣,灌入氣囊 144中’或將氣體由氣囊144中抽出。管路13 6係外接一第 二栗浦(未顯示),以將氣體,例如空氣,灌入氣囊14 5 中,或將氣體由氣囊14 5中抽出。Page 9 523444 V. Airbags 144 and 145 as defined in the description of the invention (6). The elastic films 14 and 141 are respectively fixed by clamp rings 142 and 143 which are locked to the base 104. The fixing points 148 and 149 are used to provide two ends of a hose ({16} ^ 1) 16 tube). By means of the pipeline 134, the pipeline 136, and the hose (not shown) ', the movements of the airbags 1 4 4 and 1 4 5 can be controlled, respectively. The pipeline 1 3 4 is externally connected with a first pump (not shown) to inject gas, such as air, into the air bag 144 'or to extract gas from the air bag 144. The pipeline 13 6 is connected to a second Kuriura (not shown) to inject gas, such as air, into the air bag 14 5 or to extract gas from the air bag 14 5.

加壓搶1 0 8係為位於殼體1 〇 2以及基座1 〇 4之間的空 間’用來施一向下作用力或壓力給於基座1〇4。平衡機構 1 0 6則可視為是基座1 0 4的一部份,用來使基座丨〇 4保持與 研磨塾的水平。平衡機構10 6包含有一平衡桿15 0以及一彎 曲壤(flexure ring)152鎖於基座104上。·平衡桿150可以 於轴概(b u s h i n g ) 1 5 4内作小幅度的垂直滑動,藉以提供基 座1 0 4垂直運動空間。平衡桿1 5 〇的中間為一空心管路 156〇 内部夹環1 6 2係用來鉗住一約略為環狀造型之膜片 16 0而外⑷失環1 6 4則用來钳住膜片1 6 0之另一端。如此 :來’ ^片160即可封隔介於殼體1〇2以及基座1〇4之間的 空間° f由—第三泵浦(未顯示)以及經由管路132的連 接’空乱可以灌入加壓艙1 0 8中,以控制施加於基座1 〇 4上The pressurizing system 108 is a space between the housing 102 and the base 104, and is used to apply a downward force or pressure to the base 104. The balance mechanism 106 can be regarded as a part of the base 104, which is used to keep the base 〇04 and the grinding level. The balance mechanism 106 includes a balance bar 150 and a flexure ring 152 locked on the base 104. · The balance bar 150 can make a small vertical slide within the axis profile (b u s h i n g) 1 5 4 to provide a vertical movement space of the base 104. In the middle of the balance bar 1 50 is a hollow tube 1560. The internal clamp ring 16 2 is used to clamp a diaphragm approximately 160 in a ring shape, and the outer ring 1 16 is used to clamp the membrane. The other end of the slice 1 6 0. This way: Come '^ 160 to isolate the space between the housing 102 and the base 104. ff-the third pump (not shown) and the connection through the pipeline 132 Can be filled into the pressurized tank 108 to control the application to the base 104

第10頁 523444 五、發明說明(7) 的壓力。 晶圓邊緣壓覆環11 〇—般為環狀造型,鎖於基座1 0 4週 邊下方位置。當氣體灌入加壓艙1 〇 8中,基座1 0 4因為受到 氣體的壓力而被向下推動,此時晶圓邊緣壓覆環1丨〇亦同 時受到推動,從而產生一施加於研磨墊上的壓力。晶圓邊 緣壓覆環1 1 0的一内表面1 2 6可以咬合晶圓1 〇,以避免晶圓 1 0在研磨期間從研磨頭1 〇 〇底部滑出。 下部組件1 12基本上包含有一支撐背板(supp〇rt plate)114、一晶背緩衝塾(insert fiim)2i2、一隔膜 (diaphragm seal)210、一 彈性膜(wafer fflembrane)22〇、 一箝制環(clamp ring) 23 0以及一浮動阻隔環機構240。由 晶背緩衝墊2 1 2、支撐背板11 4、隔膜2 1 0、基座1 〇 4以及平 衡機構10 6所隔離之空間定義出一加壓氣室 (pressurizable chamber)109。 一第四泵浦可經由空心管 路1 5 6與加壓氣室1 0 9相連接,藉由灌入加壓氣室1 〇 9的氣 體壓力’控制透過彈性膜22 0控制施加於晶圓丨〇上的下壓 力。 支撐背板114包含有複數個開孔(aperture)172平均分 佈於貪板1 1 4之中心區域(center region)内。隔膜210 一般為一環狀撓性材質膜,其一端係由基座i 〇 4以及晶圓 邊緣壓覆環Π 〇所夾住,另一端則由箝制環2 3 0鎖住。隔膜Page 10 523444 5. The pressure of invention description (7). The wafer edge lamination ring 11 0 is generally ring-shaped and is locked at a position below the periphery of the base 104. When the gas is filled into the pressurized chamber 108, the base 104 is pushed down because of the pressure of the gas, and at this time, the wafer edge pressing ring 1 is also pushed at the same time, thereby generating an applied force Pressure on the pad. An inner surface 1 2 6 of the wafer edge pressing ring 1 10 can engage the wafer 10 to prevent the wafer 10 from slipping out of the bottom of the grinding head 100 during grinding. The lower component 112 basically includes a support plate 114, an insert fiim 2i2, a diaphragm 210, a diaphragm fflembrane 22, and a clamp A clamp ring 23 0 and a floating barrier ring mechanism 240. A pressurizable chamber 109 is defined by the space separated by the crystal back cushion 2 1 2, the support back plate 11 4, the diaphragm 2 10, the base 1 104 and the balance mechanism 106. A fourth pump can be connected to the pressurized gas chamber 1 0 9 through a hollow pipe 1 56, and is controlled to be applied to the wafer by the gas pressure '10 9 injected into the pressurized gas chamber 1 0 Down pressure on 丨 〇. The support back plate 114 includes a plurality of apertures 172 evenly distributed in the center region of the greedy plate 1 1 4. The diaphragm 210 is generally a ring-shaped flexible material film, one end of which is clamped by the base i 04 and the wafer edge lamination ring Π 0, and the other end is locked by the clamping ring 230. Diaphragm

523444 五、發明說明(8) 210的組成可以為橡膠或人造橡膠(61&打〇„^1^(:_^〇&1^(1 f ibric),例如NYL〇NT域NOMEXTM,或者玻璃纖維等等。晶 背緩衝墊2 1 2係為一盤狀造型薄膜,可以為高分子材料所 構成,其同樣具有與背板11 4相對應之開孔。彈性膜2 2 〇可 以是硬度較晶背緩衝墊2 1 2稍軟的高分子材料所構成。彈 性膜2 2 0對於壓力較為敏感,可以緩衝施加於晶圓上的下 壓力’並可以補償背板11 4或晶圓背面的微小不平整表 面。在本發明之較佳實施例中,彈性膜2 2 0係沿著背板11 4 周圍向上延伸至背板11 4上端週邊,並由箝制環2 3 0鎖住。 浮動阻隔環機構2 4 0係為一環狀造型,嵌於支撐背板 11 4的中心區域以及邊緣區域之間。浮動阻隔環機構24〇包 括有一不連續的上部結構2 4 1以及一連續的下部環狀結構 2 4 2。在研磨階段,連續的下部環狀結構2 4 2係朝背板内部 縮回,使背板11 4可提供一接近平整的底部1 2 4以及一均勻 的下壓力予晶圓1 0。 請同時參閱圖一以及圖二,圖二為本發明下部組件 11 2中之背板11 4的上視圖。由圖二可以明顯看出本發明浮 動阻隔環機構2 4 0之設置位置。為了方便說明,下部組件 Π 2的其它元件,例如晶背緩衝墊2丨2、隔膜2丨〇以及箝制 環23 0等並未顯示於圖二中。在圖二中,支樓背板11 4包括 一中心區域3 1 0以及一邊緣區域3 1 2。如前所述,背板11 4 的中心區域3 1 0包括有複數個開孔1 7 2。螺絲孔3 3 0則分散523444 V. Description of the invention (8) 210 The composition of 210 can be rubber or artificial rubber (61 & hitting 0 ^^^ (: _ ^ 〇 & 1 ^ (1fibric)), such as NYLNONT domain NOMEXTM, or glass Fiber, etc. The crystal back cushion 2 1 2 is a disc-shaped film, which can be composed of a polymer material, which also has openings corresponding to the back plate 114. The elastic film 2 2 0 can be relatively hard The crystal back cushion pad 2 1 2 is made of a slightly soft polymer material. The elastic film 2 2 0 is more sensitive to pressure and can buffer the down pressure applied to the wafer 'and can compensate for the tinyness of the back plate 114 or the back of the wafer. Uneven surface. In the preferred embodiment of the present invention, the elastic film 2 2 0 extends upward around the back plate 11 4 to the periphery of the upper end of the back plate 11 4 and is locked by the clamping ring 2 3 0. Floating barrier ring The mechanism 2 40 is a ring shape embedded between the central region and the edge region of the support back plate 114. The floating barrier ring mechanism 24o includes a discontinuous upper structure 2 41 and a continuous lower ring Structure 2 4 2. In the grinding stage, the continuous lower ring structure 2 4 2 is facing the back plate The part is retracted, so that the back plate 11 14 can provide a nearly flat bottom 12 and a uniform down force to the wafer 10. Please refer to FIG. 1 and FIG. 2 at the same time. FIG. Top view of the back plate 11 4. The position of the floating barrier ring mechanism 2 40 of the present invention can be clearly seen from FIG. 2. For the convenience of explanation, other components of the lower component Π 2, such as the crystal back cushion 2 2 and 2. The diaphragm 2 and the clamping ring 23 0 are not shown in Fig. 2. In Fig. 2, the backplane 11 4 of the branch building includes a central area 3 1 0 and an edge area 3 1 2. As described above, the back The central area 3 1 0 of the plate 11 4 includes a plurality of openings 1 7 2. The screw holes 3 3 0 are scattered

$ 12頁 523444 五、發明說明(9) 在背板/ 14的邊緣區域312,用來鎖住隔膜210以及彈性膜 2 2 0。浮動阻隔環機構2 4 0包括有一不連續的上部結構2 4 1 以及一連續的下部環狀結構242。上部結構241係呈現帶狀 分佈,設置於背板Π4的中心區域31〇以及邊緣區域312之 間。每一上部結構2 4 1係容納於一溝槽3 1 4中,而兩相鄰之 溝槽3 1 4之間則為一連接部位3丨6,使背板η 4的中心區域 3 1 0以及邊緣區域3 1 2為互相連結。$ 12 pages 523444 V. Description of the invention (9) The edge area 312 of the back plate / 14 is used to lock the diaphragm 210 and the elastic film 2 2 0. The floating barrier ring mechanism 2 40 includes a discontinuous upper structure 2 4 1 and a continuous lower annular structure 242. The superstructure 241 has a strip-shaped distribution and is arranged between the central region 31 and the edge region 312 of the back plate Π4. Each superstructure 2 4 1 is accommodated in a groove 3 1 4, and between two adjacent grooves 3 1 4 is a connection part 3 丨 6, so that the central area 3 4 of the back plate η 4 And the edge regions 3 1 2 are interconnected.

+接著’請參閱圖三Α以及圖三β,其中圖三Α為本發明 沿著圖二切線AA’所展示之放大剖面示意圖,顯示一研磨 狀態下的部份下部組件n 2以及研磨頭1 〇 〇 ;圖三B為本發 明沿著圖二切線AA,所展示之放大剖面示意圖,顯示一真 空吸引狀態下的部份下部組件1 1 2以及研磨頭1 〇 〇。+ Then, please refer to FIG. 3A and FIG. 3β, wherein FIG. 3A is an enlarged cross-sectional schematic view of the present invention along the tangent line AA of FIG. FIG. 3B is an enlarged cross-sectional view of the present invention along the tangent line AA of FIG. 2, showing a part of the lower component 1 12 and the grinding head 100 in a vacuum suction state.

如圖三A所示,在一研磨階段,支撐背板1 1 4的邊緣區 域3 1 0係被一充氣氣囊1 4 4所頂住,此時浮動阻隔環機構 2 4 0保持浮動狀態,亦即氣囊1 4 5不施加任何壓力予浮動阻 隔環機構240。在本發明之其它實施例中,氣囊ι45則保持 一小於氣囊1 4 4壓力之較小壓力。如圖三b所示,當研磨完 ’晶圓需從研磨墊表面上移走,此時加壓艙1〇 9内的 空氣被抽走,以透過彈性膜2 2 〇真空吸引晶圓1 〇。同時, 洋動阻隔環機構240的不連續上部結構241則被充氣氣囊 1 4 5向下推擠,帶動浮動阻隔環機構2 4 0的連續下部結構 242 ’由原先平整的背板底部向下延伸突出約1至2釐米的As shown in FIG. 3A, in a grinding stage, the edge area 3 1 0 of the back plate 1 1 4 is supported by an inflatable air bag 1 4 4. At this time, the floating blocking ring mechanism 2 4 0 remains in a floating state. That is, the airbag 1 4 5 does not apply any pressure to the floating barrier ring mechanism 240. In other embodiments of the present invention, the airbag ι45 maintains a smaller pressure than the pressure of the airbag 144. As shown in Figure 3b, when the wafer is removed from the surface of the polishing pad after grinding, the air in the pressurized chamber 109 is evacuated to suck the wafer 1 through the elastic membrane 2 2 0 vacuum. . At the same time, the discontinuous superstructure 241 of the oceanic barrier ring mechanism 240 is pushed down by the inflatable airbag 1 45, and the continuous lower structure 242 of the floating barrier ring mechanism 240 is extended downward from the bottom of the original flat back plate Protruding about 1 to 2 cm

第13頁 523444 五、發明說明(ίο) 厚度。 簡言之,本發明之主要技術特徵在於採用一浮動式阻 隔環機構2 4 0,應用於研磨頭的下部組件π 2上。浮動式阻 隔環機構2 4 0係嵌於一背板11 4的中心區域3 1 0以及邊緣區 域3 1 2之間,包含有不連續的上部結構2 4 1以及連續的下部 環狀結構242。本發明之浮動式阻隔環機構24〇係藉由一獨 ,的氣囊1 45控制。利用本發明可在研磨時提供平整 板底部,以大福改善研磨均勻度。 月 之#父佳實施例,凡依本發明申請 與修飾’皆應屬本發明專利之涵 以上所述僅為本發明 專利範圍所做之均等變化 蓋範圍。 523444 圖式簡單說明 圖示之簡單說明 圖一為本發明研磨頭之剖面示意圖; 圖二為本發明下部組件中的背板之上視圖; 圖三A為本發明沿著圖二切線AA’所展示之放大剖面示 意圖,顯示一研磨狀態下的部份下部組件以及研磨頭;以 及圖三B為本發明沿著圖二切線AA’所展示之放大剖面示意 圖,顯示一真空吸引狀態下的部份下部組件以及研磨頭。Page 13 523444 5. Description of the invention (ίο) Thickness. In short, the main technical feature of the present invention is that a floating barrier ring mechanism 2 40 is used for the lower component π 2 of the polishing head. The floating barrier ring mechanism 2 40 is embedded between the central region 3 1 0 and the edge region 3 1 2 of a back plate 11 4 and includes a discontinuous superstructure 2 41 and a continuous lower annular structure 242. The floating barrier ring mechanism 24 of the present invention is controlled by a unique airbag 145. By using the present invention, the bottom of the plate can be flattened during grinding, so as to improve the uniformity of grinding. The #Fujia embodiment of the month, all applications and modifications according to the present invention 'shall fall within the scope of the patent of the present invention. The above description is only an equivalent change and scope of the patent scope of the present invention. 523444 Brief description of the drawings Brief description of the diagrams Figure 1 is a schematic cross-sectional view of the grinding head of the present invention; Figure 2 is a top view of the back plate in the lower assembly of the present invention; The enlarged cross-sectional view shown shows a part of the lower components and the grinding head in a grinding state; and FIG. 3B is an enlarged cross-sectional view shown along the tangent line AA ′ of the present invention, showing a part in a vacuum suction state Lower components and grinding head.

圖示之符號說明 10 晶 圓 90 轉 動 軸 100 研 磨 頭 102 殼 體 104 基 座 106 平 衡 機 構 108 加 壓 艙 109 加 壓· .艙 110 晶 圓 邊緣壓覆 環 112 下 部 組 件 114 支 撐 背板 124 底 部 126 内 表 面 132 管 路 134 管 路 136 管 路 138 0型環 142 夾 環 143 夾 環 144 外 氣 囊 145 内 氣 囊 148 固 定 點 149 固 定 點 150 平 衡 桿 152 彎 曲 環 154 軸 襯Explanation of the symbols in the figure 10 Wafer 90 Rotating shaft 100 Grinding head 102 Housing 104 Base 106 Balancing mechanism 108 Pressurizing chamber 109 Pressurizing ·. Chamber 110 Wafer edge crimping ring 112 Lower assembly 114 Supporting back plate 124 Bottom 126 Inner surface 132 pipe 134 pipe 136 pipe 138 0-ring 142 clamp ring 143 clamp ring 144 outer air bag 145 inner air bag 148 fixing point 149 fixing point 150 balance bar 152 bending ring 154 bushing

第15頁 523444 圖式簡單說明 156 管 路 160 膜 片 162 内 部 夾 環 164 外 部 夾 環 172 開 孔 210 隔 膜 212 晶 背 緩 衝塾 220 彈 性 膜 230 箝 制 環 240 浮 動 阻 隔環機構 241 上 部 結 構 242 下 部 結 構 310 中 心 域 312 邊 緣 區 域 314 溝 槽 316 連 接 部 位Page 15 523444 Brief description of the drawings 156 Duct 160 Diaphragm 162 Internal clamp ring 164 External clamp ring 172 Opening 210 Diaphragm 212 Crystal back buffer 塾 220 Elastic membrane 230 Clamping ring 240 Floating barrier ring mechanism 241 Superstructure 242 Substructure 310 Central area 312 Edge area 314 Groove 316 Connection

第16頁 ΓPage 16 Γ

Claims (1)

523444 六、申請專利範圍 1. 一種用於化學機械研磨(chemical mechanical polishing, CMP)之研磨頭(polishing head),該研磨頭包 含有: 一基座(base);523444 VI. Application for patent scope 1. A polishing head for chemical mechanical polishing (CMP), the polishing head package contains: a base; 一晶圓邊緣壓覆環(retaining ring),固定於該基座 上,其中該晶圓邊緣壓覆環於該基座正下方定義出一口袋 區域(pocket area),用來容納一晶圓(wafer);以及 一下部組件(lower assembly),經由一隔膜 (diaphragm seal)浮動(floating)於該口袋區域内,該下 部組件包含有:: 一圓形背板(plate),具有複數個開孔(aperture·)分 佈於該背板之一中心區域(center region)内; 一箝制環(clamp ring),用來將該隔膜緊鎖於該背板 之一邊緣區域(rim region);以及 一浮動阻隔環機構,嵌於該背板之該中心區域以及該 邊緣區域之間; 其中當進行一 CMP研磨時,該背板可提供一接近平整 的底部以及一均勻的下壓力(downforce)予該晶圓; Γ 而當研磨完成時,該浮動阻隔環機構可提供一向下伸 出之壓環結構,以提昇真空吸引。 2 ·如專利申請範圍第1項之研磨頭,其中該浮動阻隔環 機構之作動係由一獨立的内圈氣囊(bladder)以及栗浦控 制0A wafer edge retaining ring is fixed on the base, wherein the wafer edge retaining ring defines a pocket area directly below the base to receive a wafer ( (wafer); and a lower assembly (floating) in the pocket area via a diaphragm seal. The lower assembly includes: a circular plate with a plurality of openings (Aperture ·) is distributed in a center region of the backplane; a clamp ring is used to lock the diaphragm to a rim region of the backplane; and a floating A barrier ring mechanism is embedded between the center region and the edge region of the backplane; wherein when a CMP polishing is performed, the backplane can provide a near-flat bottom and a uniform downforce to the crystal Circle; Γ When the grinding is completed, the floating barrier ring mechanism can provide a pressure ring structure protruding downward to improve vacuum suction. 2 · The grinding head as described in item 1 of the patent application scope, wherein the action of the floating blocking ring mechanism is controlled by a separate inner ring bladder and Lipu 第17頁 ^23444Page 17 ^ 23444 i· ^專=申請範圍第丨項之研磨頭,其中當研磨完成 ' ^壓$衣結構約向下伸出1至2釐米(mi 1 1 imeter)左右。 4·如專利申請範圍第1項之研磨頭,其中該下部組件進 步包含有一彈性膜及一晶背緩衝墊(insert f i 1 m)位於該晶圓以及該背板之間。 5 ·如專利申請範圍第4項之研磨頭,其中該彈性膜係固 定於該背板之該邊緣區域。 6. 如專利申請範圍第1項之研磨頭,其中當進行一 CMP研 磨時,該背板之周圍壓力可藉由一外圈氣囊調節。 7. —種研磨頭的下部組件,該下部組件·包含有: 一支撐背板,具有複數個開孔分佈於該背板之一中心 區域内; 一箝制環,用來將一隔膜緊鎖於該背板之一邊緣區 域;以及 一浮動阻隔環機構,嵌於該背板的中心區域以及邊緣 區域之間; 其中當進行一 CMP研磨時,該背板可提供一接近平整 的底部以及一均勻的下壓力予一晶圓。i · ^ Special = The grinding head of item 丨 of the application scope, wherein when the grinding is completed, the pressing structure protrudes downward by about 1 to 2 cm (mi 1 1 meter). 4. The polishing head according to item 1 of the patent application scope, wherein the lower component further comprises an elastic film and a crystal back cushion (insert f 1 m) located between the wafer and the back plate. 5. The polishing head according to item 4 of the scope of patent application, wherein the elastic film is fixed to the edge region of the back plate. 6. The polishing head according to item 1 of the patent application scope, wherein when a CMP grinding is performed, the surrounding pressure of the back plate can be adjusted by an outer ring airbag. 7. —A lower assembly of a grinding head, the lower assembly comprising: a supporting back plate having a plurality of openings distributed in a central area of the back plate; a clamping ring for locking a diaphragm to the An edge region of the backplane; and a floating barrier ring mechanism embedded between the center region and the edge region of the backplane; wherein when a CMP grinding is performed, the backplane can provide a near-flat bottom and a uniform Down pressure to a wafer. 第18頁 523444 六、申請專利範圍 8. 如專利申請範圍第7項之下部組件,其中該浮動阻隔 環機構包含有一不連續的上部結構以及一連續的下部環狀 結構。 9. 如專利申請範圍第8項之下部組件,其中當研磨完成 時,該連續的下部環狀結構可咬合該晶圓以提昇真空吸 引。Page 18 523444 6. Scope of patent application 8. The lower component of the scope of patent application item 7, wherein the floating barrier ring mechanism includes a discontinuous upper structure and a continuous lower annular structure. 9. The lower component of the scope of patent application item 8, wherein when the grinding is completed, the continuous lower annular structure can engage the wafer to improve vacuum suction. 10. 如專利申請範圍第7項之另包含有f Μ 一基座(base);以及 w 一晶圓邊緣壓覆環(retaining ring),固定於該基座上; 其中該晶圓邊緣壓覆環於該基座正下方定義出一口袋區域 (pocket area),用來容納該晶圓,又其中該下部組件 (lower assembly),係經由一隔膜(diaphragm seal)浮動 (floating)於該口袋區域内。 . 1 1.如專利申請範圍第7項之下部組件,其中該浮動阻隔 環機構之作動係由一獨立的内圈氣囊(bladder)以及泵浦 控制。 Γ10. If item 7 of the patent application scope further includes f Μ a base; and w a wafer edge retaining ring, fixed on the base; wherein the wafer edge lamination A pocket area is defined just below the base to receive the wafer, and the lower assembly is floating in the pocket area through a diaphragm seal. Inside. 1 1. The lower component of item 7 of the patent application scope, wherein the action of the floating blocking ring mechanism is controlled by a separate inner ring bladder and pump. Γ 第19頁Page 19
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI727121B (en) * 2017-01-10 2021-05-11 日商不二越機械工業股份有限公司 Work polishing head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI727121B (en) * 2017-01-10 2021-05-11 日商不二越機械工業股份有限公司 Work polishing head

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