TW518689B - Control method for plasma etching process - Google Patents
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- TW518689B TW518689B TW90122030A TW90122030A TW518689B TW 518689 B TW518689 B TW 518689B TW 90122030 A TW90122030 A TW 90122030A TW 90122030 A TW90122030 A TW 90122030A TW 518689 B TW518689 B TW 518689B
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518689 A7518689 A7
五、發明說明() 發明領域: 經濟部智慧財產局員工消費合作社印製 H 發明係有關於一種電漿蝕刻製程之控制方法,特別 疋有關⑨種用於蝕刻的對象具有不同的圖案密度之電漿 钱刻製程之控制方法。 發明背景: 在電漿蝕刻反應器裡,除了電極板的設計、晶片的擺 反應軋體的輸出入、以及射頻(radio frequency ; RF) 電力的安置以外,終點偵測器的選用也對蝕刻的製程控制 有决疋性的影響。所謂的終點偵測器,就是用來幫助蝕刻 工%師決定薄膜的蝕刻是否已達終點的偵測裝置,以避免 蝕刻不足或蝕刻過度的問題發生。因為在量產化的半導體 製程中,為了確保在蝕刻步驟中徹底地將被蝕刻薄膜加以 清除’都在初步的蝕刻終了之後,再加上程度不等的過度 蝕刻(over etch),以彌補因為薄膜厚度不均,或是其它因素 所造成的蝕刻差距。而蝕刻終點與過度蝕刻之程度的判 斷’便落在終點偵測器的使用上。現在的餘刻設備都配有 各種的終點偵測器,主要使用光學放射法(〇ptical emissi〇n) 以及雷射干涉量度法(laser interferonietry)等方法來進行電 槳蝕刻製程的終點偵測。光學放射法是利用電漿所發出的 2 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) .1-------:---W#裝 (請先閱讀背面之注意事項再填寫本頁) ----訂----- 華 °i〇689V. Description of the invention () Field of invention: Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The invention relates to a method for controlling a plasma etching process, and in particular, it relates to a variety of electric objects with different pattern densities. Control method of the engraving process. Background of the invention: In the plasma etching reactor, in addition to the design of the electrode plate, the input and output of the pendulum reaction of the wafer, and the placement of radio frequency (RF) power, the choice of the end detector also affects the etching. Process control has a decisive effect. The so-called end point detector is a detection device used to help the etching technician determine whether the etching of the thin film has reached the end point, so as to avoid the problem of under-etching or over-etching. Because in the mass-produced semiconductor manufacturing process, in order to ensure that the etched film is completely removed during the etching step, after the initial etching is completed, an over-etch of varying degrees is added to compensate for the problem. The thickness of the film is uneven, or the etching gap caused by other factors. The judgment of the degree of the end of the etching and the degree of over-etching is based on the use of the end detector. At present, the equipment is equipped with various end point detectors, mainly using optical emissivity (laser interferonietry) and laser interference measurement (laser interferonietry) to perform the end point detection of the paddle etching process. The optical radiation method is to use the 2 paper sizes issued by the plasma to comply with the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 1 -------: --- W # (please read first Note on the back, please fill out this page) ---- Order ----- 华 ° i〇689
經濟部智慧財產局員工消費合作社印製 五、發明說明() 光’藉著對特定的氣體發光光譜進行監測,以決定蝕刻反 應的終點。雷射干涉量度法則是對晶片上蝕刻區内的某一 點’ W雷射光束進行光干涉的度量。當雷射光的強度不再 有因為薄膜厚度所引發的入射光與反射光的干涉現象時, 表不蝕刻的終點便已到達。 上述光學放射法係在蝕刻機台上附有光譜儀,藉著電 聚所發出的光,對特定的氣體發光光譜進行監測,以決定 電裝餘刻製程之終點是否已經到達。請參考第1圖之電漿 餘刻製程中以光譜儀所產生之產物與反應物之光譜。第1 圖中被蝕刻薄膜例如為矽,反應氣體例如為氯氣,且產物 例如為氯化矽。此外,第丨圖的橫座標為波長,縱座標為 相對強度。某物質的相對強度愈大,表示在蝕刻反應室中 此物質的量愈多。習知使用光學放射法決定蝕刻終點係藉 著對第1圖中反應氣體或是產物的相對強度進行監測。在 蝕刻的過程一開始,反應氣體被通入反應室中,因此反應 氣體或是產物的相對強度皆為特定值。當某一產物之譜線 強度大然增強或降低時,即知此時被蚀刻薄膜已敍刻完或 已蝕刻至下層之薄膜,此即為蝕刻終點。 上述習知以光學放射法決定蝕刻終點的方法僅適用於 被餘刻的薄膜之餘刻終點為兩種材質間的明顯介面或是此 薄膜的材質終點。若是如淺溝槽隔離(ShaU〇W trench 本紙張尺錢时關家標準(CNS)A4規格(210 -· ,---‘"^1^裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 518689 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() isolation; STI)技術或是雙鑲嵌(dliai damascene)技術中欲 藉著姓刻所造成的溝槽(trench)之底部並非兩種材質間的 明顯介面或是薄膜的材質終點,則上述習知以光學放射法 決定#刻終點的方法便告失效。請參考第2A圖之習知淺溝 槽隔離技術之結構剖面圖。第2 A圖中基材1 〇具有以淺溝 槽隔離技術形成之溝槽Π,且溝槽底部1 2並非位於基材 10與另一材質(未繪示)間的交界處。另請參考第2B圖之習 知雙鑲篏技術之結構剖面圖。第2B圖中位於基材1 3上的 介電層1 4具有以雙鑲嵌技術形成之溝槽1 5與介層洞1 6, 且溝槽底部1 7並非位於介電層1 4與基材1 3間的交界處。 習知触刻工程師為了解決上述淺溝槽隔離技術或是雙 鑲嵌技術中所遭遇的決定蝕刻終點之問題,目前大多是從 反覆實驗來決定達到蝕刻終點所需的蝕刻時間。然而,實 際上如此並非有效之方法。以晶圓代工廠而言,蝕刻工程 師所需面對的不同晶圓可能各自具有不同的圖案。此不同 曰曰圓上不同的圖案造成不同的圖案密度。圖案密度指的是 某薄膜上不須蝕刻的面積與總面積之比值。當圖案密度愈 大,表示溥膜上必須蝕刻的面積欲小,此時欲蝕刻至某特 定深度所需的蝕刻時間愈少。反之,當圖案密度愈小,表 不薄膜上必須蝕刻的面積愈大,此時欲蝕刻至某特定深度 所需的蝕刻時間愈多。因此,習知蝕刻工程師的實際做法 是對具有新圖案的薄膜進行蝕刻前,先設定特定時間來進 本紙張尺度適財關家鮮(CNS)A4雜(2iq χ 297公爱)---------- (請先閱讀背面之注意事項再填寫本頁) -H ϋ i_i H 1 I ϋ · n ϋ 華 518689Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention () Light's monitoring of the specific gas emission spectrum to determine the end point of the etching reaction. The laser interference measurement rule is a measure of optical interference at a point ' W laser beam on an etched area on a wafer. When the intensity of the laser light no longer has the interference phenomenon of the incident light and the reflected light caused by the film thickness, the end point of surface etching has reached. The above-mentioned optical emission method is based on a spectrometer attached to the etching machine. The light emission spectrum of the specific gas is monitored by the light emitted from the polymerization to determine whether the end of the electrical assembly process has been reached. Please refer to the plasma in Figure 1 for the spectrum of products and reactants produced by the spectrometer in the remaining process. In FIG. 1, the etched film is, for example, silicon, the reaction gas is, for example, chlorine gas, and the product is, for example, silicon chloride. In addition, the horizontal axis of the figure 丨 is the wavelength, and the vertical axis is the relative intensity. The greater the relative strength of a substance, the greater the amount of this substance in the etching reaction chamber. It is conventional to use optical radiation to determine the endpoint of the etch by monitoring the relative intensity of the reaction gas or product in Figure 1. At the beginning of the etching process, the reaction gas is passed into the reaction chamber, so the relative strength of the reaction gas or the product is a specific value. When the intensity of the spectral line of a product is greatly increased or decreased, it is known that the etched film has been etched or etched to the underlying film at this time, and this is the end point of the etching. The above-mentioned conventional method of determining the end point of etching by optical radiation method is only applicable to the end point of the film to be etched. The end point of the etched film is the obvious interface between the two materials or the end point of the material of the film. If it is such as shallow trench isolation (ShaU〇W trench, this paper rule is standard (CNS) A4 specification (210-·, --- '" ^ 1 ^ 装 -------- Order-- ------- (Please read the notes on the back before filling out this page) 518689 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description () isolation; STI) technology or dual mosaic (dliai In damascene) technology, the bottom of the trench caused by the last name is not the obvious interface between the two materials or the end point of the material of the film, then the conventional method of determining the #etch end point by optical radiation method will be reported. Failure. Please refer to the structure cross-section of the conventional shallow trench isolation technology in Figure 2A. The substrate 1 in Figure 2A has a trench formed using shallow trench isolation technology, and the bottom of the trench 12 is not located The interface between the substrate 10 and another material (not shown). Please also refer to the cross-sectional view of the structure of the conventional double inlay technology in FIG. 2B. The dielectric layer 1 on the substrate 1 3 in FIG. 2B 4 has trenches 15 and interlayer holes 16 formed by the dual damascene technology, and the bottom of the trench 17 is not located between the dielectric layer 14 and the substrate 1 3 Junction. In order to solve the problem of determining the etching end point encountered in the shallow trench isolation technology or the dual damascene technology, the conventional etching engineer mostly determines the etching time required to reach the etching end point by repeated experiments. However, In fact, this is not an effective method. For a wafer foundry, different wafers that an etching engineer needs to face may have different patterns. This difference means that different patterns on the circle cause different pattern densities. Pattern density It refers to the ratio of the area that does not need to be etched to the total area on a thin film. When the pattern density is larger, it means that the area that must be etched on the diaphragm is smaller, and the etching time required to etch to a certain depth is less. Conversely, the smaller the pattern density, the larger the area that must be etched on the surface film, and the more etch time required to etch to a certain depth at this time. Therefore, the actual practice of the conventional etching engineer is to use the new pattern Before the film is etched, first set a specific time to enter the paper scale. Wealth and wealth (CNS) A4 (2iq χ 297 public love) ---------- ( (Please read the notes on the back before filling this page) -H ϋ i_i H 1 I ϋ · n ϋ 华 518689
五、發明說明() 行第-次蝕刻。若此第一次蝕刻所造成的蝕刻深度太大, 則在下一次蝕刻時設定較短的蝕刻時間。反之,若此第一 次餘刻所造成的㈣深度不^,則在下_次#刻時設定較 長的蝕刻時間。 發明目的及概述: 雲於上述發明背景中,習知電漿蝕刻製程之控制方法 之缺點,θ此本發明之-目的為提供—種電漿餘刻製程之 控制方法,可用以臨場(in-situ)且即時(real time)控制電漿 蝕刻製私,以確保蝕刻結束時能達到預期的蝕刻結果,即 使是蝕刻的對象具有不同的圖案密产。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 依據本發明之上述目的,因此本發明提供一種電漿钱 刻製程之控制方法。本發明之電漿蝕刻製程之控制方法包 括下列步驟:在電漿控制系統啟動達特定時間,利用光譜 儀或質譜儀蒐集產物與反應物的光譜或質譜之譜線資料; 接著,計算此譜線資料中產物與反應物的相對強度之比 值;接著,立即傳送此比值至電漿控制系統;以及,電漿 控制系統依據電漿控制系統的經驗值資料庫中產物的相對 強度與反應物的相對強度之比值所對應的電漿參數自動調 整,即可即時依調整後之電裝參數進行蝕刻達到預期的蝕 刻結果。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 蠢丨' 518689V. Description of the invention () Line-the first etching. If the etching depth caused by this first etching is too large, a shorter etching time is set in the next etching. Conversely, if the depth of the hafnium caused by the first remaining time is not ^, set a longer etching time at the next time. Purpose and summary of the invention: In the above background of the invention, the disadvantages of the control method of plasma etching process are known. The purpose of the present invention is to provide a control method of plasma plasma etching process, which can be used in the field (in- situ) and real time control the plasma etching system to ensure that the desired etching result can be achieved at the end of the etching, even if the etched objects have different patterns of dense production. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs According to the above purpose of the present invention, the present invention provides a method for controlling plasma money engraving process. The method for controlling the plasma etching process of the present invention includes the following steps: when the plasma control system is activated for a specific time, using a spectrometer or a mass spectrometer to collect the spectrum of the products and reactants or spectral line data of the mass spectrum; then, calculating the spectral line data The ratio of the relative strength of the product to the reactant; then, the ratio is immediately transmitted to the plasma control system; and the plasma control system based on the empirical value database of the plasma control system for the relative strength of the product and the relative strength of the reactant The plasma parameter corresponding to the ratio is automatically adjusted, and the etching can be performed immediately according to the adjusted electrical parameters to achieve the desired etching result. This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm). Stupid 丨 518689
五、發明說明() 圖式簡單說明: 本I明的較佳實施例將於往後之說明文字中輔以下列 圖案做更詳細的闡述,其中: 第1圖為電漿姓刻製程中以光譜儀所產生之產物與反 應物之光譜; 第2A圖為習知淺溝槽隔離技術之結構剖面圖; 第2B圖為習知雙鑲嵌技術之結構剖面圖; 第3圖為本發明之一較佳實施例中電漿參數與以光譜 儀所獲得的產物之相對強度A及反應物之相對強度B的比 值A/B之關係圖; 第4圖為電漿蝕刻製程中以質譜儀所產生之產物與反 應物之質譜; 第5圖為本發明之另一較佳實施例中電漿參數與以質 4儀所獲得的產物之相對強度a及反應物之相對強度B的 比值A/B之關係圖;以及 第6圖為本發明之一較佳實施例之電漿蝕刻製程之控 制方法之流程圖。 圖號對照說明: 本紙張尺度適用中國國家標準(CNS)A4 €各(210 X 297公f ) (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention () Brief description of the drawings: The preferred embodiment of the present invention will be described in more detail in the following explanatory text with the following patterns, where: Figure 1 shows the plasma surname engraving process. The spectrum of the products and reactants produced by the spectrometer; Figure 2A is a structural cross-sectional view of the conventional shallow trench isolation technology; Figure 2B is a structural cross-sectional view of the conventional dual mosaic technology; Figure 3 is a comparison of the present invention The relationship between the plasma parameter and the ratio A / B of the relative intensity A of the product obtained by the spectrometer and the relative intensity B of the reactant in the preferred embodiment; Figure 4 is the product produced by the mass spectrometer in the plasma etching process And the mass spectrum of the reactant; Figure 5 is the relationship between the plasma parameter and the ratio A / B of the relative intensity a of the product obtained by the mass spectrometer and the relative intensity B of the reactant in another preferred embodiment of the present invention. And FIG. 6 is a flowchart of a method for controlling a plasma etching process according to a preferred embodiment of the present invention. Drawing number comparison description: This paper size applies to Chinese National Standard (CNS) A4 € each (210 X 297 male f) (Please read the precautions on the back before filling this page)
-H 1 ϋ >ϋ ϋ —i 一OJ· 1« ϋ I Μτ, 經濟部智慧財產局員工消費合作社印製 518689 經濟部智慧財產局員Η消費合作社印製 A7 五、發明說明() 10基材 11溝槽 12溝槽底部 13基材 14介電層 15溝槽 16介層洞 17溝槽底部-H 1 ϋ > ϋ i —i 一 OJ · 1 «ϋ I Μτ, printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 518689 Printed by A7 of the Intellectual Property Bureau of the Ministry of Economic Affairs Η printed by Consumer Cooperatives V. Description of invention () 10 substrates 11 trench 12 trench bottom 13 substrate 14 dielectric layer 15 trench 16 via hole 17 trench bottom
1 1 0在電聚控制系統啟動達特定時間,利用光譜儀或質譜 儀E集產物與反應物的光譜或質譜之譜線資料 1 20計算譜線資料中產物的相對強度a與反應物的相對強 度B之比值a/B 130傳送比值A/B至電漿控制系統 14〇電樂:控制系統依據電漿控制系統的經驗值資料庫中比 值A/B所對應的電漿參數自動調整,即可依調整後之 電漿參數進行蝕刻達到預期的蝕刻結果 A/B產物的相對強度a與反應物的相對強度b之比值 發明詳細說明: 如上述發明背景所述,例如在淺溝槽隔離技術或是雙 鑲嵌技術中’需蝕刻之溝槽外觀皆因為沒有兩種材質間的 明顯介面或是薄膜的終點,因此習知以光譜儀所產生的產 物(或反應物)之強度變化趨勢來決定蝕刻終點之做法便無 法發揮效用。 然而,本發明之一較佳實施例將前述第丨圖之光譜儀 .--------;-----------訂--------- 3—, (請先閱讀背面之注意事項再填寫本頁) 51S6891 1 0 When the electropolymerization control system is activated for a specific time, use the spectrometer or mass spectrometer E to collect the spectrum of the product and the reactant or the spectrum data of the mass spectrum. 1 20 Calculate the relative intensity a of the product in the spectrum data and the relative intensity of the reactant. The ratio of B a / B 130 transmits the ratio A / B to the plasma control system. 14 Electric music: The control system automatically adjusts the plasma parameters corresponding to the ratio A / B in the experience database of the plasma control system. The etching is performed according to the adjusted plasma parameters to achieve the desired etching result. The ratio of the relative strength of the A / B product a to the relative strength of the reactant b is described in detail in the invention. As described in the background of the above invention, for example, in the shallow trench isolation technology or It is the appearance of the trench to be etched in the dual damascene technology because there is no obvious interface between the two materials or the end point of the thin film. Therefore, it is known to determine the end point of the etching by the intensity change of the product (or reactant) produced by the spectrometer. This will not work. However, a preferred embodiment of the present invention is the spectrometer of the aforementioned figure 丨 -------------------- order --------- 3— , (Please read the precautions on the back before filling this page) 51S689
上%、塞城 逆一步應用,則可用於J如淺溝槽隔離㈣或是雙鑲嵌㈣巾 ^用則刻結果之決定。即使是欲㈣的^I姓刻以 (薄膜上不項鈾以从 圓具有不同的圖案密/ (潯膜上不湏蝕刻的面積與 - 夕古、土 k P i 比值),亦可由本發日, 之方法輕易決定出不同的圖案密 刻結果。 系/衣度所對應的香 請再參考第i圖。本發明之基 RB J» -T- ΛΑΓ 传^心从第1圖為例畜 …。:J圖為在姓刻過程的某一瞬間以光譜儀… π。由第i圖可知,被蝕刻的材料為矽,通進電漿万 應至的反應物為氣氣,以及產廿 夂座籾馮虱化矽。此外,第J層 的橫座標為波長,縱座標為相對強度。在經過相同蝕刻峡 間之情況下,對於較大的圖㈣度而言,必須㈣的面赛 較小,因此產生的產物較少,且剩下較多的反應物,亦即 產物的相對強度較小,且反應物的相對強度較大。反之, 在經過相同蝕刻時間之情況下,對於較小的圖案密度而 e ’必須14刻的面積較大,因此產生的產物較多,且剩下 較少的反應物,亦即產物的相對強度較大,且反應物的相 對強度較小。 (請先閱讀背面之注意事項再填寫本頁)On the other hand, the reverse application of Sicheng can be used to determine the results such as shallow trench isolation or double-inlaid towels. Even if it is engraved with the surname ^ I (the uranium on the film has a different pattern from the circle / (the ratio of the area on the film that is not etched and the ratio of -Xigu and soil k P i), it can also be produced by the present On the day, the method can easily determine the results of different pattern dense engraving. For the fragrance corresponding to the line / clothing degree, please refer to Figure i again. The base of the present invention RB J »-T- ΛΑΓ …: J is a spectrometer at a certain moment in the process of engraving the surname ... π. As can be seen from the i-th figure, the material being etched is silicon, and the reactant that passes into the plasma is gas and gas Coordinated by Feng Liaohua. In addition, the horizontal coordinate of layer J is the wavelength, and the vertical coordinate is the relative intensity. In the case of passing through the same etched isthmus, the larger the picture size, the smaller the match must be, so therefore Fewer products are produced, and more reactants remain, that is, the relative strength of the product is smaller, and the relative strength of the reactants is greater. Conversely, for the same pattern time, for a smaller pattern density And e 'must have a larger area of 14 ticks, so more products are produced, and the remaining Reactants, i.e., the relative strength of the product is large, and the reaction product of a relatively small intensity. (Note that the matters Read then fill the back page)
-ϋ ϋ I n n I ϋ · n ϋ I 經濟部智慧財產局員工消費合作社印製 根據上述本發明之基本觀念,若令触刻的產物之相對 強度為A,且餘刻的反應物之相對強度為B,則電漿餘刻 製程中所獲得的比值A/B可用來決定某一圖案密度所對應 8 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 經濟部智慧財產局員工消費合作社印製 518689 A7 ____ B7 五、發明說明() 的電漿參數,進一步根據此電漿參數使電漿控制系統自動 調整,即可依調整後之電漿參數進行至預期的蝕刻終點。 請參考第3圖,其為本發明之一較佳實施例中電漿炎數與 以光谱儀所獲得的比值A/B之關係圖。 本發明之另一較佳實施例亦可以質譜儀來取代光譜 儀。請參考第4圖。第4圖為在蝕刻過程的某一瞬間以斯 譜儀所產生的質譜。由第4圖可知,被蝕刻的材料為石夕 通進電漿反應室的反應物為氯氣,以及產物為氣化 外,第4圖的橫座標為分子量,縱座標為相對強度。第$ 圖則為本發明之另一較佳實施例中電漿參數與以質譜儀所 獲得的比值A/B之關係圖。 在進行本發明之方法之前,必須先獲得比值A/b與圖 案密度之關係圖,其中此關係圖可進一步轉換成比值a/b 與電漿參數之關係圖。接著便可在進行本發明之電漿餘刻 製程之控制方法中,重複使用上述比值A/B與電漿參數之 關係圖。此外,本發明之電漿蝕刻製程之控制方法係用於 蝕刻某一批具相同圖案密度的晶圓中的第一片。本方法至 少包括下列步驟。請參考第6圖之本發明之電漿蝕刻製程 之控制方法。首先,如步驟1丨〇在電漿控制系統啟動達特 定時間’蕙集產物與反應物的譜線資料,其中此反應物例 如可為用來钱刻之氣體或是被兹刻之珍、介電質、金屬等, 9 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公f ) (請先閱讀背面之注意事項再填寫本頁) -I I I I I ϋ I 一:口、I I n I ϋ 518689 經濟部智慧財產局員工消費合作社印製 A7 I、發明說明( 以及此譜線資料例如可為弁摄徭&说^ ^ 九μ儀所獲得的光譜或是質譜儀 所獲得的質譜。此處所謂特定時門一 令疋時間表不在此特定時間時, 雖未達钱刻結果,電漿敍刻反麻它 4反應至中的比值Α/Β卻已近似 蝕刻結果的比值Α/Β。此特定時 间之比值Α/Β可用來當做 作餘刻結果之Α/Β ’以設定進行至 心逆仃至蝕刻結果所需的電漿參 數。通常僅需約數秒鐘即可到達此特定時間。 接著’如步驟120計算此譜線資料中產物與反應物之 相對強度之比值Α/Β。接著,如步驟13〇傳送比值Μ至 電漿控制系統。然後,如步驟14〇電漿控制系統依據電漿 控制系統的經驗值資料庫中比值Α/Β所對應的電衆參數自 動調整,即ϋ冑整後< 電漿參數進行餘刻達到預期的轴 刻結果。其中上述電漿參數例如可為時間、溫度、壓力、 功率、以及氣體流量等。 綜合上述,本發明之電漿蝕刻製程之控制方法的優點 為可臨場(ιη-situ)且即時(real-time)控制電漿蝕刻製程,以 確保#刻結束時能達到預期的蚀刻終點,即使是敍刻的對 象具有不同的圖案密度。 如熟悉此技術之人員所瞭解的,以上所述僅為本發明 之較佳實施例而已,並非用以限定本發明之申請專利範 圍;凡其它未脫離本發明所揭示之精神下所完成之等效改 10 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) .--------*4-----------訂--------- (請先閱讀背面之注意事項再填寫本頁) 518689 A7 _B7_五、發明說明()變或修飾,均應包含在下述之申請專利範圍内。 (請先閱讀背面之注意事項再填寫本頁) tr--------- 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)-ϋ ϋ I nn I ϋ · n ϋ I Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs According to the above-mentioned basic concept of the present invention, if the relative strength of the product to be etched is A, and the relative strength of the remaining reactants is Is B, then the ratio A / B obtained in the plasma etching process can be used to determine the 8 paper sizes corresponding to a pattern density. The Chinese national standard (CNS) A4 specification (210 X 297 mm) is applicable. Printed by the Consumer Cooperatives of the Bureau 518689 A7 ____ B7 5. The plasma parameters of the invention description (), and further adjust the plasma control system based on the plasma parameters, so that the adjusted plasma parameters can be reached to the expected etching end point. . Please refer to FIG. 3, which is a graph of the relationship between the number of plasmitis and the ratio A / B obtained by a spectrometer in a preferred embodiment of the present invention. In another preferred embodiment of the present invention, a mass spectrometer can be used instead of a spectrometer. Please refer to Figure 4. Figure 4 shows the mass spectrum produced by an Esther spectrometer at a moment in the etching process. It can be seen from Fig. 4 that the material to be etched is Shi Xi, and the reactant that passes into the plasma reaction chamber is chlorine gas, and the product is vaporized. The abscissa of Fig. 4 is the molecular weight and the ordinate is the relative strength. Figure $ shows the relationship between the plasma parameters and the ratio A / B obtained by the mass spectrometer in another preferred embodiment of the present invention. Before carrying out the method of the present invention, it is necessary to obtain the relationship diagram of the ratio A / b and the pattern density, wherein the relationship diagram can be further converted into the relationship diagram of the ratio a / b and the plasma parameters. Then, in the method for controlling the plasma plasma etching process of the present invention, the relationship diagram of the above-mentioned ratio A / B and plasma parameters can be repeatedly used. In addition, the control method of the plasma etching process of the present invention is used to etch the first wafer in a batch of wafers having the same pattern density. This method includes at least the following steps. Please refer to FIG. 6 for the control method of the plasma etching process of the present invention. First of all, as in step 1, the spectral data of the product and the reactant are collected at the start of the plasma control system for a specific time. The reactant may be, for example, a gas used for money engraving or a treasure or reference engraved by engraving. Electrical quality, metal, etc. 9 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 male f) (Please read the precautions on the back before filling this page) -IIIII ϋ I 一 : 口 、 II n I ϋ 518689 The A7 I printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the invention description (and this spectrum data can be, for example, the spectrum obtained by the Nine Photometer & ^ ^ Nine μ instrument or the mass spectrum obtained by a mass spectrometer. When the so-called specific time and order are not at this specific time, although the result of the plasma etching is not reached, the ratio A / B of the plasma reaction to the anti-analysis 4 has been approximated by the ratio A / B of the etching result. The ratio of this specific time Α / Β can be used as Α / Β 'for the rest of the results to set the plasma parameters required to carry out the cardioversion to the etching results. Usually it takes only a few seconds to reach this specific Time. Then 'calculate this spectral line as step 120 The ratio of the relative strength of the product and the reactant A / B. Then, the ratio M is transmitted to the plasma control system in step 13. Then, in step 14 the plasma control system is based on the empirical value database of the plasma control system. The electric parameters corresponding to the ratio A / B are automatically adjusted, that is, after the trimming < the plasma parameters are achieved in the remaining time to achieve the desired axial engraving results. The aforementioned plasma parameters may be, for example, time, temperature, pressure, power, and Gas flow rate, etc. In summary, the advantages of the plasma etching process control method of the present invention are that the plasma etching process can be controlled in real-time and real-time to ensure that the desired value can be achieved at the end of # 刻The end point of the etch, even if the engraved objects have different pattern densities. As understood by those skilled in the art, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of patent application of the present invention; All other equivalent changes done without departing from the spirit disclosed by the present invention 10 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) .-------- * 4-- - ------- Order --------- (Please read the notes on the back before filling this page) 518689 A7 _B7_ V. Description of the invention () Changes or modifications should be included in the following Within the scope of applying for a patent (Please read the notes on the back before filling this page) tr --------- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with China National Standard (CNS) A4 (210 X 297 mm)
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