516249 案號90133533，申咬道 ::3·所構成 6厘如申請專利範圍第1項或約項所述之具有非單晶相中間層之全 屬舰發光二極體之製法，其中，該第一基板係包含選自GaP、GaAs 論所構成材料組群中之至少—種材料或其它可代替之材料。 7·如申請專利項或 製法，其：二：： bn、Al、Au、Pt、7η、Α〇·、τ· ^ M 1、Pb、AuBe、AuGe、Ni、PbSn或AiiZn 所構成材料組群十之至少—種材料。 請專利範驟蝴3項細單晶相㈣之金屬鍵結 ^極體衛，射，_物鳩辦自於氧化銦 ·.乳化_、减銻錫及氧化鋅騎構成材料組群中之至少一 種材料。 ^請專利範圍綱她項所述之具有非單晶相中間層之金 屬鍵、，。發光二極體之製法，其中，更包含移晴-基板。 :申請專利範圍第1項或第3項所述之具有非單晶相中間層之 屬鍵結發光二極體之製法’其中，更包含在該第二基板上形成 0901335S3 21ϋ4527β2<0-0 索號90133533 ’申請專利範圍更正（割線版），更正日期：日期2015/8/19 一半導體疊層。 U.如申請專利範圍第1項或第3項所述之具有非單晶相中間層之 、-屬鍵、光—極體之製法，其中，該金屬鍵結層可由多層金屬 之鍵結層所構成。 12. -種具有非單晶相中間層之金屬鍵結發光二極體，至少包含： 一基板； 形成於該基板上之一金屬鍵結層； 形成於該金屬鍵結層上之一非單晶相中間層； 形成於该非單晶相中間層上之一LED疊層；以及 電極。 如申請專利範圍第12項所述之具有非單晶相中間層之金屬鍵 結發光一極體’其巾，該基板可為導電妨導電基板。 14.-種具有_單晶相中間層之金屬鍵結發光二極體，至少包含： 第一接線電極； 形成於該第-接線電極上之一基板； 形成於該基板上之—金屬鍵結層； 形成於該金屬鍵結層上之—非單晶相中間層； 形成於該非單晶相中間層上之—第—接觸層； 090133533 -7:¾¾¾ A0S02 1043276240-0 18 5.16249 5°3 ’申靖專利苑囡更正（割線版卜更正曰期：日期2015/8/19 19 形成於4第一接觸層上之一第一束缚層； 形成於該第一束缚層上之一發光層； 形成於該發光層上之一第二束缚層； 形成於这第二束缚層上之—第二接觸層；以及 形成於泫第二接觸層上之一第二接線電極。 15. -種具有非單晶相中間層之金屬鍵結發光二_，至少包含： 一基板； 形成於5亥基板上之一金屬鍵結層； 形成於戎金屬鍵結層上之一多層氧化反射層； 形成於該多層氧化反射層上之一非單晶相中間層，此非 中間層之上表面包含-第—表面區域與—第二表面區域； 形成於a亥弟一表面區域上之一第一接觸層； 形成於該第一接觸層上之一第一束缚層； 形成於該第一束缚層上之一發光層； 形成於該發光層上之一第二束缚層； 形成於該第二束缚層上之一第二接觸層； 形成於遠苐二接觸層上之一第二接線電極；以及 形成於°亥第一表面區域上之一第一接線電極。 16.如申請專利範圍第14項所述之具有非單晶相中間層之金屬鍵 結發光一極體，其中，該基板係包含選自Si、GaAS、、Gap 1¾¾ A03C2 104527S240-0 19 516249 Π.如申請專利範圍第】5項所述之具有非單晶相中間層之金屬鍵 結發光二極體，其中，該基板係包含選自Si、GaAs、SiC、Al2〇3、 玻璃GaP BN、AIN所構成材料組群中之至少一種材料或其它可 代替之材料。 18. 如申請專利範圍第1S項所述之具有非單晶相中間層之金屬鍵 鲁 光極to ’其中’该多層氧化反射層係包含選自於⑽、516249 Case No. 90133533, Shen bite :: 3. The method of manufacturing 6% of all ship-like light-emitting diodes with non-single crystal phase interlayers as described in item 1 or in the scope of the patent application, wherein, the The first substrate includes at least one material selected from the group consisting of GaP and GaAs, or other alternative materials. 7. If applying for a patent item or manufacturing method, it is as follows: two: bn, Al, Au, Pt, 7η, Ao, τ, ^ M 1, Pb, AuBe, AuGe, Ni, PbSn or AiiZn At least ten kinds of materials. Please patent at least three of the metal bonds of the fine single crystal phase ^ polar body guards, shots, _ material douban from indium oxide ·. Emulsified _, antimony tin and zinc oxide ride constituting material group at least A material. ^ Please refer to the patent scope for metal bonds with a non-single crystal phase interlayer, as described in her section. The method for manufacturing a light emitting diode further includes a light-transmitting substrate. : Method for manufacturing a bonded light-emitting diode with a non-single crystal phase intermediate layer as described in item 1 or 3 of the scope of patent application, which further includes forming 0901335S3 21ϋ4527β2 < 0-0 on the second substrate No. 90133533 'Correction of patent application scope (secant version), date of correction: Date 2015/8/19 A semiconductor stack. U. The manufacturing method of --bond, photo-polar body with a non-single crystal phase intermediate layer as described in item 1 or 3 of the scope of patent application, wherein the metal bonding layer may be a multilayer metal bonding layer Made up. 12. A metal-bonded light emitting diode with a non-single crystal phase intermediate layer, comprising at least: a substrate; a metal-bonding layer formed on the substrate; a non-single-layer formed on the metal-bonding layer A crystalline phase intermediate layer; an LED stack formed on the non-single crystalline phase intermediate layer; and an electrode. As described in item 12 of the scope of the patent application, a metal-bonded light-emitting polar body with a non-single crystal phase interlayer 'is used, and the substrate may be a conductive substrate. 14. A metal-bonded light-emitting diode with a _single crystal phase intermediate layer, at least comprising: a first wiring electrode; a substrate formed on the first-wiring electrode; and a metal bond formed on the substrate A non-single crystalline phase intermediate layer formed on the metal bonding layer; a first-contact layer formed on the non-single crystalline phase intermediate layer; 090133533 -7: ¾¾¾ A0S02 1043276240-0 18 5.16249 5 ° 3 ' Shen Jing Patent Court Correction (Cut line version correction date: Date 2015/8/19 19 formed on one of the first tie layer on the first contact layer; a light emitting layer formed on the first tie layer; formed A second binding layer on the light-emitting layer; a second contact layer formed on the second binding layer; and a second wiring electrode formed on the second contact layer. 15. A kind of non-single The metal bonding luminescence layer of the crystalline phase intermediate layer includes at least: a substrate; a metal bonding layer formed on the substrate; a multilayer oxide reflection layer formed on the metal bonding layer; and formed on the substrate A non-single crystalline phase intermediate layer on a multilayer oxide reflective layer The upper surface includes a first surface region and a second surface region; a first contact layer formed on a surface region of the a; a first binding layer formed on the first contact layer; formed on the first contact layer; A light-emitting layer on the first binding layer; a second binding layer formed on the light-emitting layer; a second contact layer formed on the second binding layer; a second contact layer formed on the second contact layer A wiring electrode; and a first wiring electrode formed on the first surface area of the helium. 16. The metal-bonded light-emitting monopole having a non-single crystal phase intermediate layer as described in item 14 of the scope of patent application, wherein, The substrate system comprises a metal-bonded light-emitting diode with a non-single crystal phase intermediate layer as described in item 5 of the patent application scope [5], selected from Si, GaAS, and Gap 1¾¾ A03C2 104527S240-0 19 516249. The substrate comprises at least one material selected from the group consisting of Si, GaAs, SiC, Al203, glass GaP BN, AIN, or other alternative materials. 18. As described in item 1S of the scope of patent application Metal bond Luguang with non-single crystal phase interlayer to 'where' the multilayer reflective layer system oxide selected from the group comprising ⑽,
Al2〇3及Ti〇2所構成材料組群中之至少一種材料。 19. 如申請專利範圍第14項或第15項所述之具有非單晶相中間層 之金屬鍵結發光二極體’其巾’該金屬鍵結層之金屬係包含選自 於In Sn、Al ' Au ' Pt、Zn、Ag、Ti、Pb、AuBe、AuGe、Ni、PbSn 或AuZn所構成材料組群中之至少一種材料。 鲁 20. 如申請專利範圍第14項或第15項所述之具有非單晶相中間層 之金屬鍵結發光二極體，其中，該第一接觸層係包含選自於6#、At least one of the materials in the material group consisting of Al2O3 and Ti02. 19. The metal-bonded light-emitting diode having a non-single-crystal phase intermediate layer as described in item 14 or 15 of the scope of the patent application, the 'metal' of the metal-bonded layer comprises a metal selected from In Sn, At least one material from the group of materials consisting of Al 'Au' Pt, Zn, Ag, Ti, Pb, AuBe, AuGe, Ni, PbSn, or AuZn. Lu 20. The metal-bonded light-emitting diode having a non-single crystal phase intermediate layer as described in item 14 or item 15 of the scope of the patent application, wherein the first contact layer comprises a material selected from 6 #,
GaAsP、InGaP、AlGalnP及AlGaAs所構成材料組群中之至少一種材 料。 21. 如申4專利範圍第14項或第15項所述之具有非單晶相中間層 090153553 -¾¾%¾ A0302 104^276240-0 20 516249 索號9〇l33533，申請專利範囡更正（劃線版），更正日期·日期2〇15/3/19 2| 之金屬鍵結發光二極體，其中，該第一束缚層包含AiGaInP。 22.如申睛專利範圍第μ項或第15項所述之具有非單晶相中間層 之金屬鍵結發光二極體，其中，該發光層包含A1GaInP。 23·如申請專利範圍第14項或第15項所述之具有非單晶相中間層 之金屬鍵結發光二極體，其中，該第二束缚層包含A1GaInp。 24.如申請專利範圍第14項或第15項所述之具有非單晶相中間層 之金屬鍵結發光二極體，其中，該第二接觸係包含選自於㈣、At least one of the materials in the group consisting of GaAsP, InGaP, AlGalnP, and AlGaAs. 21. As stated in item 4 or item 15 of the scope of patent No. 4 with a non-single crystal phase intermediate layer 090153553-¾¾% ¾ A0302 104 ^ 276240-0 20 516249 request number 9030133533, apply for a correction of patent scope (Line version), correct the date-date 2015/3/19 2 | metal-bonded light-emitting diode, wherein the first binding layer includes AiGaInP. 22. The metal-bonded light-emitting diode having a non-single-crystalline phase intermediate layer as described in item # 15 or item 15 of the patent scope, wherein the light-emitting layer comprises A1GaInP. 23. The metal-bonded light-emitting diode having a non-single crystal phase intermediate layer as described in item 14 or item 15 of the scope of patent application, wherein the second binding layer comprises A1GaInp. 24. The metal-bonded light-emitting diode having a non-single crystal phase intermediate layer as described in item 14 or item 15 of the scope of patent application, wherein the second contact system comprises
InGaP A1 Ga InP及A1 GaAs所構成材料組群中之至少一種材 料〇 25.如申δ月專利乾圍第14項或第_所述之具有非單晶相中間層 之金屬鍵結發光二極體，其中可包含在該第二接觸層之上，第三 接線屯極之下形成一透明導電層。 專利乾圍第25項所述之具有非單晶相中間層之金屬鍵 極體’其中’該透明導電層包含選自於氧化銦錫、氧化 魅、..氣化銻錫' 氧化鋅及氧化辞錫所構成材料組群中之至少一 090133555 A0502 21 1043276240-0InGaP A1 Ga InP and A1 GaAs at least one material in the group of materials. 25. Metal bonded light-emitting diodes with a non-single crystal phase intermediate layer as described in claim 14 or _ The body may include a transparent conductive layer formed on the second contact layer and under the third wiring layer. The metal bonded polar body with a non-single crystalline phase intermediate layer described in item 25 of the patent, wherein the transparent conductive layer contains a material selected from the group consisting of indium tin oxide, oxidized charm, gasified antimony tin, zinc oxide and oxide. Ci tin at least one of the material group 090133555 A0502 21 1043276240-0