515135 A7 B7 PAU1UU«1.UUU - όΠ Ζ 五、發明說明（/) 【技術領域】 (請先閱讀背面之注意事項再填寫本頁) 本發明係關於一種具金屬反射鏡之面射型雷射二極體 之製作方法，特別是關於利用以金屬鏡面配合晶片鍵合技 術，來取代傳統以磊晶方式或高溫高壓晶片鍵合技術製作 5 VCSEL之布拉格反射鏡。 【先前技術】 經濟部智慧財產局員工消費合作社印製 以應用於1.3或1.55pmVCSEL雷射為例，傳統之面射型 雷射（Vertical-Cavity Surface-Emitting Laser，VCSEL)二極體其 結構為元件的共振腔與蠢晶層垂直，反射面係由蠢晶層或 10 表層介電質薄膜組成，雷射光由正面發出，故又稱為垂直 共振腔面射型雷射二極體，其自從問世以來一直吸引全球 各研究機構之注意。然縱觀各波段之VCSEL元件，長波長 (1.3 or 1.55 mm) VCSELs二極體仍遠落後主要較短波長如 GaAs/AlGaAs系歹ij之VCSEL元件，探究其原因為VCSEL之核 15心為其共振腔’係利用分佈式布拉格反射器（Distributed Bargg Reflector ; DBR)磊晶薄膜層直接成長在活性區（active) 之上下方，而VCSEL之元件特性好壞除了受活性區結構與 特性影響以外，DBR之反射率與導熱特性扮演著關鍵之角 色。欲達此高之反射率必須藉助於組成DBR反射對 20 (Reflector pairs)其折射係數之差（Δη)與反射對之對數適當搭 配，對於1.3或1.55 mm VCSEL元件，若以晶袼匹配為考 量，只能選擇InGaAsP/InP反射鏡成長於InP系列之活性層， 然而InGaAsP/InP反射對其不僅導熱係數差且如相差太小（相 較於GaAs/AlAs Bragg mirror)，因此需很多對反射對來提昇 ---- -3-_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公髮） ------ 515135 A7 B7 pAOiuubi.UUU- 4/1^: 五、發明說明（2 ) 其反射率，然此又衍生另一問題一在如此複雜的磊晶結構 成長過程中，需要上千次分子束(MBE)或氣體源(MOCVD) 的切換及冗長的成長時間（4到8小時）而又要維持小於1%的 成長誤差率，對於執行磊晶成長之工作者而言實在是一項 5 艱辛的挑戰，且對於磊晶成本、元件良率將大打折扣。若 能於適當基板上（散熱好且熱膨脹係數與活性層相當）製 作高反射率之金屬鏡面，且配合晶片鍵合技術將其與雷射 活性層形成一體，如此一來相較於DBR磊晶，金屬鏡面鍍 膜品質容易控制，且成本低，對於製作高品質之VCSEL應 10更容易達成。 由此可見，上述習用技術仍有諸多缺失，實非一良善 之設計者，而亟待加以改良。 本案發明人鑑於上述習用技術所衍生的各項缺點’乃 亟思加以改良創新，並經多年苦心孤詣潛心研究後，終於 15成功研發完成本件一種具金屬反射鏡之面射型雷射二極體 之製作方法。 【發明目的】 本發明之目的即在於提供一種具金屬反射鏡之面射型 雷射二極體之製作方法，係在於以晶片熔合技術將高反射 20 率之金屬層黏貼至1.3或1.55 mm VCSEL結構，以取代傳統 晶格匹配蠢晶之InGaAsP/InP DBR或以晶片炫合技術用晶格 與1.3、1.55 mm VCSEL不匹配之GaAs/AlGaAs所形成之 DBR。 本發明之次一目的係在於提供一種具金屬反射鏡之面 ______ -4- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) 訂---------線- 經濟部智慧財產局員工消費合作社印製 515135 A7 B7 經濟部智慧財產局員工消費合作社印製 ΡΑϋΐυυίη.υυυ - ^ηζ五、發明說明（$ ) 射型雷射二極體之製作方法，係在於該金屬鏡面配合晶片 鍵合技術製程簡單且製作成本便宜、VCSEL特性良好等優 點。 【技術内容】 5 可達成上述發明目的之一種具金屬反射鏡之面射型雷 射二極體之製作方法，其中包括有：一具金屬鏡面結構之 基板、一具面射型雷射結構蠢晶膜之基板、以及晶片鍵合 技術與磊晶膜之基板移除技術。以晶片鍵合方式將個別磊 晶VCSEL之活性區晶片與具上、下反射鏡之晶片黏合，配 10 合高溫、高壓與基板移除之程序來形成VCSEL。該金屬鏡 面結構之金屬可以為 Au，AuBe，AuZn，AuGeNi，AuGe，Ni，Pt，Ti， Pd等金屬個別層或搭配多層金屬層共同使用。面射型雷射 二極體可以為850, 1300, 1500 nm波長之雷射’該雷射可以 為以有機金屬化學氣相沉積法或以分子束磊晶成長法來製 15作。 【圖式簡單說明】 請參閱以下有關本發明一較佳實施例之詳細說明及其 附圖，將可進一步瞭解本發明之技術内容及其目的功效， 有關該實施例之附圖為： 2〇 圖一為本發明以晶片炫合技術將向反射率之金屬層黏 貼至VCSEL結構圖； 圖二為傳統VCSEL之結構圖； 圖三a為傳統以晶片鍵合方式將個別蠢晶VCSEL之活 性區晶片與具上、下反射鏡之晶片黏合，配合高溫、高壓 ___-5- _ 本紙張尺度適用中國國家標準（CNS)A4規格（210 297公釐） (請先閒讀背面之注意事項再填寫本頁) .€ 訂- |線_515135 A7 B7 PAU1UU «1.UUU-όΠ Z V. Description of the invention (/) [Technical Field] (Please read the precautions on the back before filling this page) The present invention relates to a surface-emitting laser with a metal reflector The manufacturing method of the diode is particularly related to the use of a metal mirror surface with wafer bonding technology to replace the traditional epitaxial method or high temperature and high pressure wafer bonding technology to make a 5 VCSEL Bragg reflector. [Previous Technology] Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, applied to 1.3 or 1.55pm VCSEL laser as an example. The structure of a traditional vertical-cavity surface-emitting laser (VCSEL) diode is The resonant cavity of the device is perpendicular to the stupid crystal layer. The reflective surface is composed of a stupid crystal layer or a 10-layer dielectric film. The laser light is emitted from the front side, so it is also called a vertical cavity surface-emitting laser diode. Since its inception, it has attracted the attention of research institutions around the world. However, looking at the VCSEL elements in each band, the long-wavelength (1.3 or 1.55 mm) VCSELs diodes are still far behind the main shorter wavelengths, such as GaAs / AlGaAs 歹 ij VCSEL elements. The reason is that the core of the VCSEL 15 core is The 'resonant cavity' uses a distributed Bragg reflector (DBR) epitaxial thin film layer to grow directly above and below the active area. The characteristics of VCSEL elements are affected by the structure and characteristics of the active area. The reflectivity and thermal conductivity of DBR play a key role. To achieve this high reflectivity, the difference between the refractive index (Δη) of the DBR reflection pair 20 (Reflector pairs) and the number of reflection pairs must be appropriately matched. For 1.3 or 1.55 mm VCSEL elements, the crystal-chirp matching is considered. Only InGaAsP / InP mirrors can be selected to grow on the active layer of the InP series. However, InGaAsP / InP reflection has not only a poor thermal conductivity but also a small phase difference (compared to GaAs / AlAs Bragg mirror), so many pairs of reflection pairs are required. To improve ---- ___ This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 issued) ------ 515135 A7 B7 pAOiuubi.UUU- 4/1 ^: V. Invention Explanation (2) Its reflectivity, but this leads to another problem. During the growth of such a complex epitaxial structure, thousands of molecular beam (MBE) or gas source (MOCVD) switching and lengthy growth time are required ( (4 to 8 hours) and maintaining a growth error rate of less than 1% is a difficult challenge for workers performing epitaxial growth, and it will greatly reduce the cost of epitaxial and component yield. If a high-reflectivity metal mirror surface can be made on a suitable substrate (good heat dissipation and thermal expansion coefficient equivalent to the active layer), and combined with the wafer bonding technology to integrate it with the laser active layer, compared to DBR epitaxy , The quality of metal mirror coating is easy to control, and the cost is low. It should be easier to achieve high-quality VCSEL. It can be seen that there are still many shortcomings in the above-mentioned conventional techniques, and they are not a good designer. They need to be improved. In view of the various shortcomings derived from the above-mentioned conventional technology, the inventor of this case was eager to improve and innovate. After years of painstaking and meticulous research, he finally successfully developed a surface-emitting laser diode with a metal reflector Production Method. [Objective of the invention] The purpose of the present invention is to provide a method for manufacturing a surface-emitting laser diode with a metal reflector, which is to adhere a metal layer with a high reflectivity of 20 to 1.3 or 1.55 mm VCSEL by wafer fusion technology. Structure to replace the traditional lattice-matched stupid InGaAsP / InP DBR or the DBR formed by GaAs / AlGaAs with a crystal lattice that does not match 1.3 and 1.55 mm VCSEL. The second purpose of the present invention is to provide a surface with a metal mirror ______ -4- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love) (Please read the precautions on the back before filling (This page) Order --------- Line-Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 515135 A7 B7 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ΡΑϋΐυυίη.υυυ-^ ηζ ) The manufacturing method of a laser diode is based on the advantages of the metal mirror surface with wafer bonding technology, simple manufacturing process, low manufacturing cost, and good VCSEL characteristics. [Technical content] 5 A method for manufacturing a surface-emitting laser diode with a metal reflector, which includes the following: a substrate with a metal mirror structure, and a surface-emitting laser structure. Substrate of crystal film, as well as wafer bonding technology and substrate removal technology of epitaxial film. The active region wafers of individual epitaxial VCSELs are bonded to the wafers with upper and lower mirrors by wafer bonding, and a VCSEL is formed by a combination of 10 high temperature, high pressure, and substrate removal procedures. The metal of the metal mirror structure may be an individual layer of Au, AuBe, AuZn, AuGeNi, AuGe, Ni, Pt, Ti, Pd, or a combination of multiple metal layers. Surface-emitting laser diodes can be lasers with wavelengths of 850, 1300, and 1500 nm. The lasers can be made by organometallic chemical vapor deposition or molecular beam epitaxial growth. [Brief description of the drawings] Please refer to the following detailed description of a preferred embodiment of the present invention and the accompanying drawings to further understand the technical content of the present invention and its purpose and effect. The drawings related to this embodiment are: 2〇 Figure 1 is a structural diagram of the present invention using a wafer-bonding technology to paste a reflective metal layer to a VCSEL; Figure 2 is a structural diagram of a traditional VCSEL; Figure 3a is a traditional wafer bonding method for bonding active regions of individual VCSELs The wafer is bonded to the wafer with the upper and lower mirrors, with high temperature and high pressure. ___- 5- _ This paper size applies to China National Standard (CNS) A4 specification (210 297 mm) (please read the precautions on the back first) Fill out this page). € Order-| Line_
五、發明說明（4〇 A7 B7 PAQ1QQ81 AMD - 6/1 經濟部智慧財產局員工消費合作社印製 與基板移除之程序來形成VCSEL之示意圖； 圖三b為圖三a之VCSEL活性區之結構圖； 圖四為該一種具金屬反射鏡之面射型雷射二極體之金 屬Au/AuBe經所有VCSEL後續製成後其反射率特性圖；以 5 及 圖五為該一種具金屬反射鏡之面射型雷射二極體之製 作方法之VCSEL以晶片鍵合方式流程圖。 【主要部分代表符號】 1金屬層 2置入丙酮中以超音波震盪約十分鐘， 再以DI沖淨 3置入丙酮中以超音波震盪約十分鐘， 再以DI沖淨 4 鍍上Au/AuBe 5將兩晶片面對面黏貼 6熱處理 7 移除InP Substrate 801 P型接層鈦/金/鎳 802 P型砷化鋁鎵/砷化鎵鏡面 803第一熔合界面 804第二熔合界面 805量子井活性層 806 N型砷化鋁/砷化鎵鏡面 807 N型接層鎳/金鍺/鎳/金 -6 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） il—1 — t------- —訂--------- 線·- <請先閱讀背面之注意ί項再填寫本頁)V. Description of the invention (40A7 B7 PAQ1QQ81 AMD-6/1 Schematic diagram of the process of printing and substrate removal by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs to form a VCSEL; Figure 3b is the structure of the VCSEL active area in Figure 3a Figure 4. Figure 4 shows the reflectivity characteristics of the metal Au / AuBe of a surface-emitting laser diode with a metal reflector after all VCSELs are subsequently manufactured. Figures 5 and 5 show the type of metal reflector The method of manufacturing VCSEL of the surface-emitting laser diode is based on the wafer bonding method. [Representative symbols of the main parts] 1 Metal layer 2 is placed in acetone and oscillated by ultrasonic for about ten minutes, and then washed with DI 3 Put in acetone for 10 minutes with ultrasonic vibration, and then rinse with DI. 4. Plate Au / AuBe. 5. Paste the two chips face to face. 6. Heat treat. 7. Remove InP Substrate 801. P-type titanium / gold / nickel. 802. P-type arsenic. Aluminum gallium / gallium arsenide mirror 803 First fusion interface 804 Second fusion interface 805 Quantum well active layer 806 N-type aluminum arsenide / gallium arsenide mirror 807 N-type junction nickel / gold germanium / nickel / gold-6- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) il —1 — t ------- —Order --------- Line ·-< Please read the note on the back before filling this page)
808磷化銦彼覆層（PS) 809 7*6nm量子井6*8nm障壁 810磷化銦彼層（N型） 811 λ /4砷磷化銦鎵 812填化基板 【較佳實施例】 本發明即以晶片溶合技術將南反射率之金屬層1黏貼 至1 ·3或1 ·55 mm VCSEL結構，如圖一所示，以取代傳統晶 格匹配磊晶之InGaAsP/InP DBR或以晶片熔合技術用晶格與 5 1·3、1·55 mm VCSEL不匹配之GaAs/AlGaAs 所形成之DBR。 而目前VCSEL結構之共振腔形成之方式有兩種，一種 為磊晶VCSEL之活性區前即同時以磊晶方式成長出共振腔 之下反射鏡，如圖二所示，另一種為以晶片鍵合方式將個 別蠢晶VCSEL之活性區晶片與其下反射鏡之晶片黏合，配 合鬲温、高壓與基板移除之程序來形成VCSEL (如圖三 a、b所示），然此兩種方式之共振腔皆以布拉格反射鏡 (DBR)，其藉由兩層折射係數不同之材料，配合入射雷 射光波長來設計共振腔之厚度與對數，通常對數越多，反 射率越高，然所需磊晶之成本亦較大，亦不容易控制，且 15 若以晶片鍵合方式達成VCSEL，晶片表面需有適當之圖案 與高溫、高壓處理方能具有高成功率之鍵結，此些處理不 僅晶片表面可用面積變少更對雷射特性有不良影響。 本發明之特點為以具反射率極南之金屬鏡面來取代 DBR，此金屬鏡面要求特性為（1) VCSEL經所有後續製程 -7- 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂---- 經濟部智慧財產局員工消費合作社印製 515135 A7 B7 PA010081.AMD-8/12 5 10 五、發明說明（ 後，此金屬仍可維持極高之反射率（如圖四所示）， (2)此金屬可與vcsEL形成n-type或p-type歐姆接觸（一也 為p-type歐姆接觸），（3)此金屬可當作金屬鏡與具^ 活性層基板之鍵結層，藉由晶片鍵合技術來將鏡面與雷專 黏成一體。因此藉由本發明，無須再遙晶DBR可大大 VCSEL之成本，本發明為於低溫（<450。〇、短時間u hour)之鍵結，對雷射結構無不良之影響，此外，鏡面1 金屬，於基板之選擇可與VCSELi晶膜熱膨脹係數相差^ 遠且且散熱好之基板（如VCSEL為1.3、1·55μηι之波長，達 晶用基板為ΙηΡ’而金屬鏡面之基板可為GaAs或Si)，其农 成本或對雷射特性均有正面之影響。 先前之U或1·55μΐη所示，本發明可先於矽基板（号 GaAs)上鍍上Au/AuBe反射鏡，而後在與具VCSEL結構交808 Indium Phosphide Coating (PS) 809 7 * 6nm Quantum Well 6 * 8nm Barrier 810 Indium Phosphide Coating (N-type) 811 λ / 4 Arsenic Indium Phosphide 812 Filled Substrate [Preferred Embodiment] This The invention is to use the wafer fusion technology to adhere the South Reflective Metal Layer 1 to a 1-3 or 1.55 mm VCSEL structure, as shown in Figure 1, to replace the traditional lattice-matched epitaxial InGaAsP / InP DBR or wafer. The fusion technology uses a DBR formed by GaAs / AlGaAs with lattices that do not match 5 1 · 3, 1.55 mm VCSELs. At present, there are two ways to form the resonant cavity of the VCSEL structure. One is to epitaxially grow the reflector under the resonant cavity at the same time in the active region of the epitaxial VCSEL. As shown in Figure 2, the other is to use a wafer key. The bonding method is to bond the active region wafers of individual VCSELs with the wafers of the lower reflector, and cooperate with the procedures of high temperature, high pressure, and substrate removal to form VCSELs (as shown in Figure 3a and b). The resonant cavity is a Bragg reflector (DBR). It uses two layers of materials with different refractive indices to match the wavelength of the incident laser light to design the thickness and logarithm of the resonant cavity. Generally, the more the logarithm, the higher the reflectance. The cost of the crystal is also large, and it is not easy to control, and if the VCSEL is achieved by wafer bonding, the surface of the wafer must have a proper pattern and high temperature and high pressure processing to have a high success rate of bonding. Decreasing the usable surface area has a negative effect on laser characteristics. The feature of the present invention is to replace the DBR with a metal mirror surface with extreme south reflectivity. The required characteristics of this metal mirror surface are (1) VCSEL is subjected to all subsequent processes. 7- This paper standard applies to China National Standard (CNS) A4 specification (21〇 x 297 mm) (Please read the notes on the back before filling out this page) Order ---- Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 515135 A7 B7 PA010081.AMD-8 / 12 5 10 5. Description of the invention ( Later, this metal can still maintain a very high reflectivity (as shown in Figure 4), (2) this metal can form n-type or p-type ohmic contact with vcsEL (one is also p-type ohmic contact), ( 3) This metal can be used as the bonding layer between the metal mirror and the substrate with the active layer, and the mirror surface and the lightning can be bonded together by the wafer bonding technology. Therefore, the invention does not need to remotely crystallize the DBR and can greatly increase the VCSEL. Cost, the present invention is bonded at low temperature (< 450. 0, short time u hour), and has no adverse effect on the laser structure. In addition, the choice of mirror 1 metal and substrate can be different from the thermal expansion coefficient of VCSELi crystal film. ^ A distant and heat-dissipating substrate (such as VCSEL 1.3, 1.555μηι Wavelength, the substrate for the crystal is 1ηP 'and the substrate for the metal mirror surface can be GaAs or Si), and its agricultural cost or the laser characteristics have a positive effect. As shown by the previous U or 1.55 μΐη, the present invention can be preceded by Au / AuBe mirrors are plated on the silicon substrate (No. GaAs), and then intersected with a VCSEL structure.
InP基板於低-、短時間下達成晶片鍵合，流程圖如圈 15五。 該製作流程為： *將Si或GaAs以N2吹乾淨，置入丙酮中以超音波震運 約十分鐘，再以DI沖淨2 ; *將VCSEL以N2吹乾淨，置入丙酮中以超音波震翌 20 約十分鐘，再以DI沖淨3 ; *將前述兩者鍍上Au/AuBe 4 ; *使用N2吹乾，並將兩晶片面對面黏貼5 ; 氺把waferpair放入石磨夾具中，進行熱處理6 ; *熱處理完畢，移除InP Substrate 7。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----.--— 1--丨丨i丨丨丨_丨丨訂--------- (锖先閱讀背面之沒意事項再填窝本頁〕 經濟部智慧財產局員工消費合作社印製 PA010081.AMD-9/12 五、發明說明（ 其中在熱處理的階段，利用35〇〇c之溫度以及3〇分鐘 的時間’料射結構無不良之影響，反而具低溫、短時間 之鍵結特性。 【特點及功效】 本發明所提供之一種具金屬反射鏡之面射型雷射二極 體之製作方法’與前述其他習用技術相互比較時，更具有 下列之優點： 此金屬可以製転於簡單、便宜之熱蒸鍍系統即可達成 下列三項功能·· 10 15 20 1·具高反射率。 2·可與 p-type InP 形成 contae丈。 3·當作主基板（SiorGaAs)與磊晶基板兩片晶片之鍵 結層。 上列詳細說明係針對本發明之一可行實施例之具體說 明，惟該實施例並非用以限制本發明之專利範圍，凡未脫 離本發明技藝精神所為之等效實施或變更，均應包含於本 案之專利範圍中。 綜上所述，本案不但在技術思想上確屬創新，並能較 習用物品增進上述多項功效，應已充分符合新穎性及進步 性之法定發明專利要件，麦依法提出申請，懇請責局核InP substrates achieve wafer bonding in low- and short-term time. The production process is: * blow Si or GaAs clean with N2, put it into acetone for 10 minutes with ultrasonic vibration, and then wash it with DI; 2 * blow clean VCSEL with N2, put it into acetone for ultrasonic Shock 20 for about ten minutes, then rinse with DI 3; * Plate the two with Au / AuBe 4; * Blow dry with N2, and stick the two wafers face to face 5; 放入 Put waferpair into the stone grinding fixture, Perform heat treatment 6; * After heat treatment, remove InP Substrate 7. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----.------ 1-- 丨 丨 i 丨 丨 丨 _ 丨 丨 Order --------- (锖 Read the unintentional matter on the back before filling in this page] Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs PA010081.AMD-9 / 12 V. Description of the invention (where the temperature of 350,000 ° C and In 30 minutes, the material structure has no adverse effects, but has low-temperature and short-term bonding characteristics. [Features and Effects] A surface-emitting laser diode with a metal reflector is provided by the present invention. Compared with the other conventional technologies mentioned above, the production method has the following advantages: This metal can be made into a simple and cheap thermal evaporation system to achieve the following three functions: · 10 15 20 1 · High reflectivity 2. It can form contae with p-type InP. 3. It can be used as the bonding layer between the two wafers of the main substrate (SiorGaAs) and the epitaxial substrate. The detailed description above is a specific description of a feasible embodiment of the present invention. However, this embodiment is not intended to limit the patent scope of the present invention. Equivalent implementations or changes that deviate from the technical spirit of the present invention should be included in the scope of patents in this case. In summary, this case is not only technically innovative, but also can enhance the above-mentioned multiple effects over conventional items. Full compliance with the novel and progressive statutory invention patent requirements, Mai filed an application in accordance with the law, and urged the Office to verify
准本件發明專利申請案，以勵發明，至感德便。 X χ 297公釐） -9-This application for an invention patent will be granted to encourage inventions to the greatest extent. X χ 297 mm) -9-