TW515124B - Electrode for a lithium battery and a lithium secondary battery - Google Patents

Electrode for a lithium battery and a lithium secondary battery Download PDF

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Publication number
TW515124B
TW515124B TW089122034A TW89122034A TW515124B TW 515124 B TW515124 B TW 515124B TW 089122034 A TW089122034 A TW 089122034A TW 89122034 A TW89122034 A TW 89122034A TW 515124 B TW515124 B TW 515124B
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Taiwan
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electrode
item
film
thin film
patent application
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TW089122034A
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Chinese (zh)
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Hiroaki Ikeda
Masahisa Fujimoto
Shin Fujitani
Masaki Shima
Hiromasa Yagi
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Sanyo Electric Co
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

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Abstract

The present invention relates to a type of electrode for lithium battery. The electrode on the battery is formed by a thin film of active materials, such as microcrystalline silicon film and amorphous silicon, that can adsorb and release lithium. By means of the joint formed in the thickness direction, the thin film is separated into columnar shape with its bottom closely attached to the battery.

Description

515124 智 慧 財 產 局 員 消 費 合 社 印 製 B7 五、發明說明(1 ) [技術領域] 本發明係關於一種新穎之鋰電池 極之鋰電池和鋰二次電池(鋰蓄電池)者 使用該電 [背景技術] 近年來盛行研究開發中的鋰二次 如 電極種類,其充放電電壓、充放電循環壽命】:所:吏用的 性等之電池特性有很大影響而變化。 呆存特 活性物質而可獲得電池特性之提升。’藉由改良電極| s 六旦使用=屬為負極活性物質時,可以構成以重量 谷里汁都呈兩能量密度之電池,但是 . 充電時,鐘金屬會挤515124 Printed by B7 of the Intellectual Property Bureau Consumer Cooperative Ltd. V. Description of the Invention (1) [Technical Field] The present invention relates to a novel lithium battery and lithium secondary battery (lithium battery) that use the electricity [Background Technology] ] In recent years, research and development of lithium secondary electrodes such as electrode types, their charge and discharge voltage, and charge and discharge cycle life]: So: the characteristics of the battery and other characteristics have a great influence and change. The battery characteristics can be improved by retaining the active material. ’By improving the electrode | s When the six denier is used as a negative electrode active material, it can constitute a battery with two energy densities by weight. However, when charging, the bell metal will squeeze

ί枝狀結晶物之析出,而引起内部短路之問題。X 對於上述之問題,有一項報告使用充電時會發生電化 學反應而和鋰成為合金之鋁、矽、錫等為電極之鋰二次電 極(參照 Solid State Ionics,113 至 115,57 頁(1998》。其 特別是石夕,理論容量大,而做為顯示高容量的電池用 負極甚有將來性’因此’已有以此為負極之各種二次電池 之研究報告(參照日本公開專利特開平第1〇_255768號公 報)。然而,這種合金負極,其做為電極活性物質之合金本 身經過充放電後會變成微細粉末而產生蓄電特性劣化之現 象,因此,無法獲得充分之充放電循環特性。 [發明之概述] 本發明之目的係在提供一種做為鐘二次電池之電極使 用時’可成為充放電容量高,且充放電循環特性優良之鋰 二次電池之新穎的鋰電池用電極,以及使用該電極之鋰電 本紙張尺度適用中國國家標準(CNS)A4規格⑵Q χ 297公髮) 1 311933 515124 A7 B7 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 五、發明說明(2 池和鋰二次電池。 本發明為在蓄電體上設置有能吸藏 質所構成薄膜之鋰電池用電極,該薄獏在η鋰之活性物 縫而分離為柱狀,且該柱狀部分之底部^方向形成切 為其特徵。 畜^體連結一起 本發明t之活性物質薄膜,係藉由在A 成之切縫而分離成為柱狀。因此, “-方向所形 空隙,藉由該空隙’使伴隨充放電循環時:成有 =縮所引起之應力得以緩和,而能抑制如活性物質= 自畜電體剝離之應力發生。 八物貝薄膜 間之貼緊狀態得以保持良好狀況。^刀之底部蓄電體 本發明中,以在薄膜之厚度方向,薄膜厚度至少1/2 以上之部分,係藉由切縫而分離成為柱狀為宜。 另外,薄膜表面形成凹凸,而該凹凸之谷部為末端之 切縫形成在薄膜時,柱狀^八 町柱狀邛刀由至少含有一個凸部之狀況 溥膜表面上形成切縫也屬可行。此時,在薄層表面 形成切縫以使柱狀部分含有複數個凸部。 本發月令形成於薄膜之切縫,可以在第一次以後之 充放電時形成。該情形下’例如充放電前,於薄膜之表面 f形成有凹凸部分’藉由第一次以後之充放電,形成有以 薄膜表面之凹凸部分之谷部為末端之切縫,藉該切縫使薄 膜分離成柱狀。 ?膜表面之凹凸’可以和底層之蓄電體表面之凹凸相 對應而形成之。換雜丄 L_ 、口之稭由使用表面具有凹凸之蓄電體, 本紙張中_家鮮--:--— 訂 i 2 311933 MM24 A7 ...濟 慧The precipitation of dendritic crystals causes the problem of internal short circuit. X For the above problems, there is a report using lithium secondary electrodes where aluminum, silicon, tin, etc. are used as electrodes when electrochemical reactions occur during charging (see Solid State Ionics, pages 113 to 115, 57 (1998 》. Especially Shi Xi has a large theoretical capacity, and it is very futuristic as a negative electrode for batteries showing high capacity. “Therefore, there have been research reports on various secondary batteries using this as a negative electrode (refer to Japanese Laid-Open Patent Publication No. Hei. No. 10-255768). However, this alloy negative electrode, which is an electrode active material, becomes fine powder after charging and discharging, and the storage characteristics are deteriorated. Therefore, a sufficient charge-discharge cycle cannot be obtained. [Summary of the Invention] The object of the present invention is to provide a novel lithium battery for a lithium secondary battery which can be used as an electrode of a clock secondary battery and has a high charge / discharge capacity and excellent charge / discharge cycle characteristics. Electrodes, and the paper size of lithium batteries using the electrodes are applicable to China National Standard (CNS) A4 specifications (Q χ 297) (1) 311933 515124 A7 B7 Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau. 5. Description of the invention (2 cells and lithium secondary batteries. The present invention is a lithium battery electrode provided with a thin film made of a storable substance on an electric storage body. The active substance is separated into a columnar shape, and the bottom part of the columnar part is formed into a cut. It is characterized by the animal body being joined together with the active material film of the present invention t by being separated into a slit formed in A. Column-shaped. Therefore, the gap formed in the "-direction" can reduce the stress caused by the charge-discharge cycle during the charge-discharge cycle, and suppress the occurrence of stress such as active material = peeling from the electric body. The tightness between the eight-layered films can be kept in good condition. ^ Bottom storage battery of the knife In the present invention, in the thickness direction of the film, the portion of the film with a thickness of at least 1/2 or more is separated by slitting into A columnar shape is preferred. In addition, when the surface of the film is uneven, and the slit at the end of the unevenness is formed on the film, the columnar ^ Hachimachi columnar trowel is formed on the surface of the film by at least one convex portion. It is also feasible to form a slit. At this time, a slit is formed on the surface of the thin layer so that the columnar portion contains a plurality of convex portions. This slit is formed in the slit of the film, which can be formed during the first charge and discharge. In this case, 'for example, a concave-convex portion is formed on the surface f of the film before charging and discharging', a first and subsequent charge-discharge process forms a slit with the valley portion of the concave-convex portion on the surface of the film as an end. The seam separates the film into a columnar shape.? The unevenness on the surface of the film can be formed corresponding to the unevenness on the surface of the bottom layer of the electricity storage body. The hybrid L_ and the straw are made of the electricity storage body with unevenness on the surface. Home Fresh-: --- Order i 2 311933 MM24 A7 ... Jihui

I 製 五、發明說明(3 ) 且在上面形成薄膜,就能在薄膜表面賦與凹凸。 蓄電體之表面粗度(Ra)以001//Π1以上為宜,其中以 〇 〇1至1/zm為更佳,尤以0 〇5至〇 5“111為最佳。上述 表面粗度(Ra)在日本工業標準(JIS B 〇6〇1_1994)有所訂 疋’例如可利用表面粗度計測定之。 本發明中,蓄電體之表面粗度(Ra),對於活性物質薄 .膜之厚度⑴而言,以保持Ra^t之關係為宜。又,蓄電體 之表面粗度(Ra)和局部山峰之平均間隔(s)以具有1〇〇〇以 ^ s之關係為宜。局部山峰之平均間隔在曰本工業標準 (JIS Β 〇6〇1·1994)巾已有訂^,例如可藉表面粗度計測定 之。 蓄電體表面凹凸之凸部分形狀並無特別限制,例如以 錐體狀為較宜。 柱狀。Ρ刀之上方部分,為避免充放電反應時電流 ,集中,以帶有圓形之形狀為較宜。 本發明中,由活性物質所構成薄膜上形成之厚度方向 之切縫,可以在第-次以後之充放電時形成,也可以在充 放電前事先形成之。在充放電前,於薄膜上事先形成切縫 之方法,可以在組成電池之前,使電極之薄膜吸藏鋰等4 後再釋放等之方法,該薄膜體積膨騰之後,再收縮而形成。 當然,使用正極不含鐘之活性物質時,可以吸藏經之狀楚 下、卫σ之。也可使用,例如微影(ph〇t〇 叫nphy)成為藕 由切縫分離成柱狀之薄膜亦無妨。 I 本發明中之活性物質薄臈,例如由鋰和化合物或形成 本纸張尺度適—財關家標準(CNS)A4規格⑵G x 297·^^ 3 311933I system 5. Description of the invention (3) When a thin film is formed on the surface, unevenness can be provided on the surface of the thin film. The surface roughness (Ra) of the electricity storage body is preferably 001 // Π1 or more. Among them, 0.001 to 1 / zm is more preferable, and 005 to 0.05 "111 is the most preferable. The above-mentioned surface roughness ( Ra) is specified in Japanese Industrial Standards (JIS B 〇〇〇〇_1994) 'For example, it can be measured with a surface roughness meter. In the present invention, the surface roughness (Ra) of the electricity storage body is thin for the active material. The thickness of the film In other words, it is preferable to maintain the relationship of Ra ^ t. In addition, it is preferable that the surface roughness (Ra) of the electricity storage body and the average interval (s) of local peaks have a relationship of 1000 to ^ s. Local peaks The average interval has been specified in Japanese Industrial Standard (JIS B0610 · 1994). For example, it can be measured by a surface roughness meter. The shape of the convex and concave portions on the surface of the electricity storage body is not particularly limited, such as a cone. The shape is more suitable. Columnar. The upper part of the P-knife is more suitable to have a circular shape in order to avoid the current during the charge and discharge reaction. In the present invention, the thickness direction formed on the thin film made of the active material The slit can be formed during the first and subsequent charging and discharging, and it can also be formed before charging and discharging. Before charging and discharging, a method of forming a slit on the film can be used to make the film of the electrode occlude lithium and then release it before forming the battery. After the volume of the film has swelled, it can be formed by shrinking. Of course, when using an active material that does not contain a bell at the positive electrode, the shape of the sutra can be stored, and the sigma can also be used. For example, lithography (phοt〇 called nphy) can be separated into a column shape by a slit. The thin film is not a problem. I The active material in the present invention is thin, for example, made of lithium and compounds or formed on this paper. The size of the paper is suitable—CNS A4 specification⑵G x 297 · ^^ 3 311933

-n n i (請先閱讀背面之注意事項再填寫本頁) n n H n n n I 裝 • ϋ n n I---訂----- •線· A7 五、發明說明( ,溶體之材料所形成。上述材料 族、IIIB族、IVB放t J舉有兀素週期表上之 ,^ 、和VB_之元素,以及牙去、Η 上之第四週期,第五週期知笛二、京以及兀素週期表 化物和硫化物中至少選 /、週期之過渡金屬元素之氧 夕、擇—種材料而使用。 族、㈣族、IVB族和;:或:之成固*溶體之元素週期表油 梦'*、辞-鎵、錯、例舉如碳、&、 和鉍等元辛。又1 锡、銻、汞、鉋、鉛 1期之厘 期表上第四週期、第五週期和第 二週:之過渡金屬元素,具體而言,係例如銳、鈦、鈒 鉻、錳、鐵、鈷、鎳、鋼、 m 辞紀、錯、鈮、鉬、ϋ、釘、 錢、纪、銀、編、鑭系元素,給、鈒、鶴、鍊、餓、銀、 鉑、金和汞等。 上述元素中,以自碳、矽、鍺、錫、鉛、鋁、銦、鋅、 叙、叙和汞中至少選擇-種使用為宜,尤以使心及/或鍺 # 為佳。 經濟部智慧財產局員工消費合作社印製 一般而言,矽係根據結晶性之不同,而大致可分為非 晶質矽、微結晶矽、多結晶矽和單結晶矽。本發明中所述 非晶質矽乃除去多結晶矽和單結晶矽以外的非晶質矽和微 結晶矽之意。非晶質矽在拉曼光譜分析時,相對應於結晶 領域之520cm-1附近,實質上不會有高峰出現。微結晶矽 在拉曼光譜分析時,相對應於結晶領域之52〇cnrl附近之 尚峰以及相對應於非晶質領域之480CHT1附近之高锋,實 質上兩個高峰都會出現。所以,微結晶矽實質上係由結晶 領域和非晶質領域所構成。多結晶矽和單結晶矽在拉曼光 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 X 297公釐) 311933 A7-nni (Please read the precautions on the back before filling this page) nn H nnn I equipment • ϋ nn I --- order ----- • line · A7 V. Description of the invention (, formed by the material of the solution. The above material family, IIIB, and IVB are listed with elements on the periodic table, ^, and VB_, as well as the fourth cycle on the teeth, and the fifth cycle. Periodic table compounds and sulphides are selected from at least, oxygen of the transition metal element of the period, and a material selected from the group., Group VIII, Group IVB and; Dream '*, Ci-Gallium, Wrong, Illustrative elements such as carbon, &, and bismuth. Also, the fourth, fifth and fifth cycles on the chronological table of the first phase of tin, antimony, mercury, shavings, and lead. The second week: transition metal elements, specifically, such as sharp, titanium, samarium chromium, manganese, iron, cobalt, nickel, steel, m dynasty, wrong, niobium, molybdenum, hafnium, nail, money, ji, Elements of silver, knitting, lanthanide, nitrogen, hafnium, crane, chain, star, silver, platinum, gold, mercury, etc. Among the above elements, carbon, silicon, germanium, tin, lead, aluminum, indium, zinc, Syria Syria It is advisable to select at least one kind of mercury, especially to make heart and / or germanium #. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Generally speaking, silicon can be roughly divided into non-silicon based on its crystallinity. Crystalline silicon, microcrystalline silicon, polycrystalline silicon, and single crystal silicon. The amorphous silicon in the present invention means amorphous silicon and microcrystalline silicon other than polycrystalline silicon and single crystal silicon. Amorphous When Raman spectroscopy is performed on silicon, it corresponds to the vicinity of 520 cm-1 in the crystalline field, and there is virtually no peak. When Raman spectroscopy is performed on silicon, microcrystalline silicon corresponds to the peak near 52ocnrl in the crystalline field And corresponding to the high front near 480CHT1 in the amorphous field, essentially two peaks will appear. Therefore, microcrystalline silicon is essentially composed of the crystalline field and the amorphous field. Polycrystalline silicon and single crystal silicon Raman paper size is applicable to China National Standard (CNS) A4 (21 × 297 mm) 311933 A7

:)丄厶呻 A7 ______B7 五、發明說明(6 子之電解液中,浸潰金屬盤 ^ 、I之轉同,透過使轉筒旋轉且導 愈Ml而在轉同表面上析出銅’將其剝離而獲得之銅箔。 電解㈣之一面或雙面,可施以粗輪化處理或表面處理。 ^電解法使乳製銅落表面上析出銅,而成表面粗糙 化之鋼、冶也可供採用。 蓄電體上形成中間層,在該中間層上形成活性物質薄 膜亦可。此時’中間層以含有容易擴散在活性物質薄膜中 之成分為宜,例如以銅層為佳。例如於表面粗链化之錄箱 (電解鎳落等)上,使用形成銅層之蓄電體亦可。又,藉由 電解法在錄治上使銅析出,藉此而粗糖面化之錄羯也可供 採用。 ^ ,本發明t,形$於活性物質薄膜上之切㈤,也可為事 前在活性物質薄臈中之厚度方向延伸而形成之沿著低密度 領域所形成之切刻。上述低密度領域,例如由蓄電體表@ 之凹凸部分之谷部向上方延伸而形成。 本發月中,以蓄電體之成分能擴散在活性物質薄膜為 宜。藉上述蓄電體成分擴散到薄膜内,可提升蓄電體和活 性物質薄臈間之緊貼性。做為蓄電體成分如有和鐘不會合 金化的銅等元素擴散時,能抑制擴散領域裡與鐘元素^ 金化,因此,也能抑制伴隨充放電反應所引起之薄膜之膨 脹、收縮,且可抑制活性物質薄膜從蓄電體造成剝離現象 之應力之產生。 擴散在薄膜内之蓄電體成分之濃度,以靠近蓄電體附 I近較高’隨著接近薄膜表面而愈減低為宜。透過具有這種 本紙張尺度適財國iii準(CNS)A4 $格⑽χ 297公髮) 6 311933 ί裝 頁I· 訂 雜 515124 A7 五、發明說明(7 ) 蓄電體成分之濃度梯度’抑制伴隨充放電反應而產生之薄 膜之膨脹、收縮力量,在蓄電體附近能發揮更強大作用, 所以容易抑制在蓄電體附近發生能使活性物質薄膜產生剝 離之應力另外,隨著接近薄模表面,蓄電體成分濃度之 減低’可收維持高充放電容量之效。 已擴散的蓄電體成分’在薄臈中以不與薄膜成分形成 丨金屬間化合物而形成固溶體為宜。上述金屬間化合物乃指|看 金屬互相以特定比率結合形成具有特定結晶構造之化合 物。薄膜成分和蓄電體成分在薄膜中’藉非成為金屬間化 合物而形成固溶體,可使薄膜和蓄電體間之緊貼狀態更為 良好’而能獲得更高之充放電容量。 本發明中之活性物質薄臈上可以有雜物質之蒙布漆存 在。上述雜質,可例舉例如磷、鋁、砷、銻、硼、鎵、銦、:) 丄 厶 呻 A7 ______B7 V. Description of the invention (6 electrolytes, immersed in the metal plate ^ and I, the same, through the rotation of the drum and guide M1 to precipitate copper on the surface of the same rotation ' Copper foil obtained by peeling. One or both sides of the electrolytic tincture can be subjected to rough rounding or surface treatment. ^ Electrolytic method can precipitate copper on the surface of dairy copper, and the surface can also be roughened steel or metallurgy. It is also possible to form an intermediate layer on the electricity storage body and form an active material film on the intermediate layer. In this case, the 'intermediate layer preferably contains a component that easily diffuses into the active material film, for example, a copper layer is preferred. A surface-roughened recording box (electrolytic nickel drop, etc.) may use a copper storage layer. Also, copper can be precipitated on the recording by electrolytic method, so that the recording of rough sugar can also be performed. It can be used. ^ In the present invention, the cutting formed on the active material thin film can also be formed along the low-density area by extending in the thickness direction of the active material thin film beforehand. The above low Density field, such as the valley of the uneven part of the electricity storage meter @ It is formed by extending upward. In the middle of this month, it is preferable that the components of the electric storage body can be diffused in the active material film. By diffusing the above-mentioned components of the electric storage body into the film, the adhesion between the electric storage body and the active material can be improved. As a component of the electric storage body, if elements such as copper, which does not alloy with the bell, diffuse, it can suppress the metallization with the bell element ^ in the diffusion field. Therefore, it can also suppress the expansion and contraction of the film caused by the charge and discharge reaction. And it can suppress the stress caused by the active material film from peeling from the electricity storage body. The concentration of the electricity storage body component diffused in the film should be higher near the electricity storage body, and it should be reduced as it approaches the surface of the film. With this paper standard suitable for financial countries iii standard (CNS) A4 $ 格 ⑽χ 297 public issue) 6 311933 ί page I · order miscellaneous 515124 A7 V. Description of the invention (7) Concentration gradient of the components of the electricity storage device The expansion and contraction force of the thin film produced by the discharge reaction can play a stronger role in the vicinity of the electricity storage body, so it is easy to suppress the occurrence of peeling of the active material film near the electricity storage body, which can cause peeling of the active material film. In addition, with the approach of the surface of the thin mold, the decrease in the concentration of the component of the electric storage body is effective for maintaining a high charge and discharge capacity. It is preferable that the diffused electricity storage component component 'forms a solid solution without forming an intermetallic compound with the thin film component in the thin film. The above-mentioned intermetallic compound means that the metals are combined with each other at a specific ratio to form a compound having a specific crystal structure. The thin film component and the storage battery component are formed into a solid solution in the thin film by not becoming an intermetallic compound, so that the adhesion state between the thin film and the storage body is better, and a higher charge and discharge capacity can be obtained. In the present invention, the active material sheet may be covered with a varnish of foreign materials. Examples of the impurities include phosphorus, aluminum, arsenic, antimony, boron, gallium, indium,

氧、氮等元素週期表上之IIIB族、! VB族、VB族、VIB 族中之元素。 線 本發明中之活性物質薄膜,亦可由複數層積層而形 成。所積層之各層中組成,結晶性’雜質之濃度等可以不 同。並且,可以在薄膜之厚度方向具有傾斜構造。例如, 可使組成’結晶性,雜質之濃度等在厚度方向加以變化而 形成傾斜構造。 士本發明中之活性物質薄膜,係以藉由與鐘形成合金而 吸藏鐘之活性物質薄膜為宜。 本發明之活性物質薄膜中,亦可事先吸存或添加鐘, ,裡也可以^形成活性物質薄膜之際添加。換言之,藉由形 本紙張尺度適用中國(CNS)^^i() χ 297公[ 7 311933 A7 A7 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明(8 ) =含有鐘之活性物質薄膜,而添加經於活性物質薄膜上亦 :薄=成活性物質薄膜之後.,吸存或添加鐘在活性物 、上亦可❹吸藏或添加鋰於活性物質薄膜之方 例舉以電化學方法吸藏或添加鋰。 / ’° 雖然本發明之活性物質薄膜之厚度並無特別限制,作 7如可採用2()_以下之厚度。又,為獲得高充放電容量;· 厚度以1 // m以上為較宜。 本發明中,為提升蓄電體和薄膜間之緊貼性,可以 f電體和薄膜之間設置中間層。該中間層之材料,以能在 蓄電體材料和活性物質材料之間形 固溶體之物質為較宜。 L金尤其以能形成 、本發明之鋰電池,以具備有由上述本發明之電極所構 成之負極和正極以及電解質為其特徵。 本發明中’「鋰電池」一詞乃包括鋰一次電池和鋰二次 電池。因此’本發明之電極係可作為鋰一次電池用和鋰二 次電池用。 本發明之鋰二次電池,以具備有由上述'本發明之電極 所構成之負極和正極以及非水電解質為其特徵。 本發明之鋰二次電池所用電解質之溶劑並無特別限 制,例如碳酸乙烯酯、碳酸丙烯酯、碳酸丁烯酯等環狀碳 酸酯和碳酸二甲酯、碳酸甲、乙酯、碳酸二乙酯等鏈狀碳 酸酯之間的混合溶劑。又,前述環狀碳酸酯和〗,2_二甲氧 基乙烷、1,2-二乙氧基乙烷等之醚系溶劑或r ·丁内酯、二 氧化四氫噻吩、乙酸甲醋等鏈狀酯等之間的混合溶劑Y又, g紙張尺度適用中國國家標準(CNS)A4規格(2_1G X 297公爱)------------ 8 311933 -----------AWI ^--------1--------- (請先閱讀背面之注意事項再填寫本頁) 515124 J J — --JJ---1---- . ' 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(9 ) 電解質之溶質,例如LiPF6、LiBF4、LiCF3S03、Group IIIB of the periodic table of oxygen, nitrogen and other elements! VB, VB, VIB elements. The active material film in the present invention may be formed by laminating a plurality of layers. The composition, concentration of the crystalline 'impurity, and the like in each layer of the stacked layer may be different. Further, it may have an inclined structure in the thickness direction of the film. For example, the composition 'crystallinity, the concentration of impurities, and the like can be changed in the thickness direction to form an inclined structure. The active material film in the present invention is preferably an active material film that occludes the bell by forming an alloy with the bell. The active material film of the present invention can also be stored or added in advance. It can also be added when the active material film is formed. In other words, China (CNS) ^^ i () χ 297 is applied by the size of the paper [7 311933 A7 A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Description of the invention (8) = active substance containing a bell Thin film, and added to the active material film: thin = after forming the active material film. The method of storing or adding a bell to the active material, or absorbing or adding lithium to the active material film is exemplified by electrochemical methods. Methods Storage or addition of lithium. / ′ ° Although the thickness of the active material film of the present invention is not particularly limited, a thickness of 2 () _ or less may be adopted as the thickness. In addition, in order to obtain a high charge and discharge capacity, the thickness is preferably 1 // m or more. In the present invention, in order to improve the adhesion between the electricity storage body and the thin film, an intermediate layer may be provided between the electricity storage body and the thin film. The material of the intermediate layer is preferably a substance capable of forming a solid solution between the electricity storage material and the active material material. The L gold is particularly characterized by being capable of forming the lithium battery of the present invention, and including the negative electrode, the positive electrode, and the electrolyte composed of the electrode of the present invention. In the present invention, the term "lithium battery" includes lithium primary batteries and lithium secondary batteries. Therefore, the electrode system of the present invention can be used for lithium primary batteries and lithium secondary batteries. The lithium secondary battery of the present invention is characterized by including a negative electrode, a positive electrode, and a nonaqueous electrolyte composed of the electrode of the present invention. The solvent of the electrolyte used in the lithium secondary battery of the present invention is not particularly limited, such as cyclic carbonates such as ethylene carbonate, propylene carbonate, butene carbonate, and dimethyl carbonate, methyl carbonate, ethyl ester, and diethyl carbonate. Mixed solvents such as chain carbonates. In addition, the cyclic carbonate and ether solvents such as 2-dimethoxyethane, 1,2-diethoxyethane, or r.butyrolactone, tetrahydrothiophene dioxide, and methyl acetate The mixed solvent Y among the chain-like esters, etc., g paper size is applicable to China National Standard (CNS) A4 specification (2_1G X 297 public love) ------------ 8 311933 ---- ------- AWI ^ -------- 1 --------- (Please read the notes on the back before filling this page) 515124 JJ---JJ --- 1 ----. 'Printed A7 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (9) Solutes of electrolytes, such as LiPF6, LiBF4, LiCF3S03,

LiN(CF3S02)2、LiN(C2F5S02)2、LiN(CF3S02)(C4F9S02)、 LiC(CF3SO2)3>LiC(C2F5SO2)3^LiASF6>LiC/O4>Li2B10C/10 >LiN (CF3S02) 2, LiN (C2F5S02) 2, LiN (CF3S02) (C4F9S02), LiC (CF3SO2) 3 > LiC (C2F5SO2) 3 ^ LiASF6 > LiC / O4 > Li2B10C / 10 >

Li2B12C/12等以及其混合物。再且,電解質之例舉,有聚氧 化乙烯 '聚丙烯腈、聚偏二氟乙烯等聚合物電解質中含浸 電解液而成之溶膠狀聚合物電解質、或Lil、Li3N等之無 |機固體電解質等。本發明之鋰二次電池之電解質,祗要呈 現離子導電性之溶媒用的鋰化合物,與將其溶解、保持用 溶媒不會因在電池充電時或放電時或保存時之電壓而發生 分解,就能無限制地使用。 本發明之鐘二次電池之正極活性物質,例如A、Li2B12C / 12 and the like and mixtures thereof. Furthermore, examples of the electrolyte include a sol-like polymer electrolyte obtained by impregnating an electrolyte with a polymer electrolyte such as polyethylene oxide, polyacrylonitrile, and polyvinylidene fluoride, or an organic solid electrolyte such as Lil or Li3N. Wait. The electrolyte of the lithium secondary battery of the present invention is a lithium compound for a solvent that exhibits ionic conductivity, and the solvent for dissolving and maintaining it will not be decomposed by the voltage when the battery is charged, discharged or stored. Can be used without restrictions. The positive electrode active material of the bell secondary battery of the present invention, such as A,

LiNi02、LiMn204、LiMn02、LiCo。5Ni0 5〇2、LiNi02, LiMn204, LiMn02, LiCo. 5Ni0 5〇2,

LiNiuCouMn^O2等之含有鋰之過渡金屬氧化物,或二氧 化錳等不含鋰的金屬氧化物等。另外,其他能將鋰以電化 ,學作用插入、脫離的物質皆能採用,並無任何限制。 本發明之電極,尚可以提供在能吸存、釋放鈉或鉀等 鹼金屬或鎂或鈣等鹼土金屬之電極活性物質所構成非水電 解質電池以及非水電解質二次電池等鋰以外之電池的電極 用途。 本發明之另-種二次電池用電極乃備有由薄膜所構成 之電極材料層和與電極材料層緊貼的蓄電體,薄膜上左面 方向有網目狀相連且朝向蓄電體在厚度方向延伸而形2 低密度領域為其特徵。上述這種二次電池用電極,係例如 在上述本發明之鐘電池用電極中,沿著低密度領域向厚度 Μ氏張尺度適用中國國家標準(CNg)A4規格(趟χ挪公髮- 又 9 311933 II Μ--------^---------線 (請先閱讀背面之注意事項再填寫本頁) 五、發明說明(10 ) 方向延伸而形成有切縫之前述狀態之電極。 因此,薄臈上以擴散有蓄電體成分為宜,己 電體成分,在薄膜中不與薄膜成分形成金屬間化合物,而 以形成固溶體為宜。 上述薄臈以藉薄臈形成法在蓄電體上形成薄膜為宜。 上述溥膜形成法之例有如CVD法、減射法、蒸鑛法火焰 噴塗法以及電鍍法等方法。 形成在薄膜之低密度領域,係與上述本發明之鐘電、、也 用電極上所說明之低密度領域相同。 關於活性物質薄臈及蓄電體,也可以採用上述本發明 之經電池用電極上所採用之相同活性物質薄膜及蓄電體。 [圖面之簡單說明] 第1圖係表示本發明實施例中所製造之鋰二次電池剖 面模式圖。 ▲第2圖係表示本發明之一實施例的電極,在充放電前 狀態之掃描型電子顯微鏡照片(2000倍之倍率)。 μ第3圖係表示本發明之一實施例的電極,在充放電前 狀悲之掃描型電子顯微鏡照片(5000倍之倍率)。 第4圖係表示本發明之一實施例的電極,在充放電後 狀悲之掃描型電子顯微鏡照片(500倍之倍率)。 第5圖係表示本發明之一實施例的電極,在充放電後 狀態之掃描型電子顯微鏡照片(2500倍之倍率)。 第6圖係表示本發明之一實施例的電極之矽薄膜由上 方觀察之掃描型電子顯微鏡照片(1000倍之倍率)。 本ϋ尺度適用中國(⑽)A4規格⑵G x 297公釐) ----------|_裝 (請先閱讀背面之注意事項再填寫本頁) ^ ·11111 經濟部智慧財產局員工消費合作社印製 311933 A7LiNiuCouMn ^ O2 and other lithium-containing transition metal oxides, or manganese dioxide and other lithium-free metal oxides. In addition, other materials capable of electrochemically inserting and removing lithium can be used without any restrictions. The electrode of the present invention can also provide batteries other than lithium such as non-aqueous electrolyte batteries and non-aqueous electrolyte secondary batteries composed of electrode active materials capable of occluding and releasing alkali metals such as sodium or potassium or alkaline earth metals such as magnesium or calcium. Electrode use. Another electrode of the present invention is provided with an electrode material layer composed of a thin film and an electricity storage body in close contact with the electrode material layer. The left side of the film is connected in a mesh shape and extends toward the electricity storage body in the thickness direction. Shape 2 is characterized by its low density area. The above-mentioned electrode for a secondary battery is, for example, in the above-mentioned electrode for a clock battery of the present invention, the Chinese National Standard (CNg) A4 specification is applied along the low-density area toward the thickness M-scale (the χχ 公公 发-also 9 311933 II Μ -------- ^ --------- line (please read the precautions on the back before filling this page) 5. Description of the invention (10) Extending the direction to form a slit The electrode in the aforementioned state. Therefore, it is preferable that the electric storage component is diffused on the thin film, and the positive electrode component does not form an intermetallic compound with the thin film component in the film, but preferably forms a solid solution. It is preferable to form a thin film on a power storage body by a thin samarium formation method. Examples of the samarium film formation method include methods such as a CVD method, an emission reduction method, a vapor deposition method, a flame spraying method, and an electroplating method. It is formed in the low-density field of the film. It is the same as the low-density field described in the above-mentioned bell electrode and the electrode of the present invention. As for the active material thin film and the electricity storage body, the same active material film used in the battery electrode of the present invention and Power storage body. [Simplified illustration Figure 1 is a schematic cross-sectional view of a lithium secondary battery manufactured in an example of the present invention. ▲ Figure 2 is a scanning electron micrograph (2000) showing the state of an electrode of an embodiment of the present invention before charging and discharging Magnification). Μ FIG. 3 is a scanning electron microscope photograph (5000 times magnification) of an electrode of one embodiment of the present invention before charging and discharging. FIG. 4 is an embodiment of the present invention. Scanning electron microscope photograph (500 times magnification) of the electrode after charging and discharging. Fig. 5 is a scanning electron microscope photograph (2500 times magnification) showing the state of the electrode after charging and discharging according to an embodiment of the present invention. Fig. 6 is a scanning electron microscope photograph (1000 times magnification) showing a silicon thin film of an electrode of an embodiment of the present invention as viewed from above. This ϋ standard applies to China (⑽) A4 size ⑵G x 297 male Li) ---------- | _ equipment (please read the precautions on the back before filling this page) ^ · 11111 Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 311933 A7

經濟部智慧財產局員工消費合作社印製 A7 ------—B7__ 五、發明說明(12 ) 〜-- 圖係表示本發明之電極在充放電前之狀態的 掃描型電子顯微鏡照片(2〇〇〇倍之倍率)。 第2〇圖係表示本發明之電極a7在充放電前之狀態的 1田型電子顯微鏡照片(1〇〇〇〇倍之倍率)。 圖係表示本發明之電極a8在充放電前之狀態的 掃描型電子顯微鏡照片(2000倍之倍率)。 第22圖係表不本發明之電極以在充放電前之狀態的 掃描型電子顯微鏡照片(10000倍之倍率)。 圖係表示本發明之電極a7在充放電後之狀態的 掃描型電子顯微鏡照片(500倍之倍率)。 圖係表示本發明之電極a7在充放電後之狀態的 掃描型電子顯微鏡照片(2500倍之倍率)。 第25圖係表示本發明之電極a8在充放電後之狀態的 掃描型電子顯微鏡照片(500倍之倍率)。 第26圖係表示本發明之電極以在充放電後之狀態的 掃描型電子顯微鏡照片(25〇〇倍之倍率)。 ,第27圖係表不本發明之電極在充放電後之鍺薄臈 之狀匕、由上方觀察之掃描型電子顯微鏡照片(1〇〇〇倍之倍 率)。 $ 28圖係表示本發明之電極”在充放電後之鍺薄臈 之狀L由上方觀察之掃描型電子顯微鏡照片(5〇〇〇倍之倍 率)。 第29圖係表示本發明之電極a7在充放電後之鍺薄膜 之狀態由稍斜方向觀察之掃描型電子顯微鏡照片(1〇〇〇倍 本紙張尺度適用中國1¾豕鮮(CNS)A4規格⑵G x 29 厂----- 12 311933 -----------* 裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) A7Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 -------- B7__ V. Description of the Invention (12) ~ --- This is a scanning electron microscope photograph showing the state of the electrode of the present invention before charging and discharging (2 〇OOx magnification). Figure 20 is a field-type electron microscope photograph (1000-fold magnification) showing the state of the electrode a7 of the present invention before charging and discharging. The drawing is a scanning electron microscope photograph (2000 times magnification) showing the state of the electrode a8 of the present invention before charging and discharging. Fig. 22 is a scanning electron microscope photograph (10,000 times magnification) showing the state of the electrode of the present invention before charging and discharging. The drawing is a scanning electron microscope photograph (500 times magnification) showing the state of the electrode a7 of the present invention after charging and discharging. The figure is a scanning electron microscope photograph (2500 times magnification) showing the state of the electrode a7 of the present invention after charging and discharging. Fig. 25 is a scanning electron microscope photograph (500 times magnification) showing the state of the electrode a8 of the present invention after charging and discharging. Fig. 26 is a scanning electron microscope photograph (250,000 times magnification) showing the state of the electrode of the present invention after charging and discharging. Fig. 27 is a scanning electron microscope photograph (1000 times magnification) showing the shape of germanium thin film after charging and discharging of the electrode of the present invention, viewed from above. $ 28 is a scanning electron microscope photograph (50,000 times magnification) showing the shape of the thin electrode of germanium after charging and discharging, which is the electrode of the present invention. Figure 29 shows the electrode a7 of the present invention. Scanning electron microscope photograph of the state of the germanium film after charging and discharging viewed from a slightly oblique direction (1000 times the paper size is applicable to China 1¾ 豕 CN (CNS) A4 size⑵G x 29 Factory ----- 12 311933 ----------- * Install -------- Order --------- (Please read the precautions on the back before filling this page) A7

經濟部智慧財產局員工消費合作社印製 之倍率)。 第3〇圖偉矣— ^ UL At ,、衣不本發明之電極a7在充放電後之鍺薄膜Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs). Figure 30 Wei Wei — ^ UL At, the germanium film of electrode a7 of the present invention after charging and discharging

之狀態由稍斜方A - 问觀察之掃描型電子顯微鏡照片(5000倍 之倍率)。 第31圖#矣- ’、衣不本發明之電極a8在充放電後之鍺薄膜 之狀態由上方_窗 β 祝祭之掃描型電子顯微鏡照片(1 〇〇〇倍之倍 •率)。 第32圖将矣-丄#The state of the state is observed by a slightly oblique square A-scanning electron microscope photograph (5000 times magnification). Figure 31 # 矣-′, the state of the germanium film of the electrode a8 of the present invention after charging and discharging is from the top_window β Scanning electron microscope photograph (1000 times magnification • rate). Figure 32 will be 矣-丄 #

At ’、衣不本發明之電極a8在充放電後之鍺薄膜 之狀悲由上方·*3, 規祭之知描型電子顯微鏡照片(5000倍之倍 率)。 第33圖将矣-丄a ^ 尔衣不本發明之電極a8在充放電後之鍺薄膜 之狀由稍斜方向觀察之掃描型電子顯微鏡照片(1000倍 之倍率)。 第34圖伤矣- I” 示表不本發明之電極a8在充放電後之鍺薄膜 馨之狀匕、由稍斜方向觀察之掃描型電子顯微鏡照片(5000倍 之倍率)。 ^^3 5 Γ^ΐ 圖係表示本發明之電極a7在充放電前之鍺薄膜 ‘之狀悲由上方觀察之掃描型電子顯微鏡照片(1000倍之倍 率)。 第36圖係表示本發明之電極a8在充放電前之鍺薄膜 -之狀悲由上方觀察之掃描型電子顯微鏡照片(1〇〇〇倍之倍 率)。 第37圖係表示本發明之電極a7之鍺薄膜在深度方向 之構成元素濃度分布圖。 ---------------------^---------^ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用悄格⑵G x 297公爱) 13 311933 515124 A7 B7 五、發明說明(l4 ) 第以圖係表示本發明之電極a8之鍺薄膜在深 之構成元素濃度分布圖。、 又向 第39圖係表示本發明 凡從€别之電極al 1之判而从 掃描型電子顯微鏡照片(2〇〇〇倍之倍率)。 、 第40圖係表示本發明 又兄敌電刖之電極1之剖面的 掃描型電子顯微鏡照片(1〇〇〇〇倍之倍率)。 、 第41圖係表示本發明之充放電前之電極⑴之矽薄臈 由上方觀察之掃描型電子顯微鏡照片(1000倍之倍率)。、 第42圖係表示本發明之充放電後之電極⑴之矽薄膜 由上方觀察之掃描型電子顯微鏡照片(1 〇〇〇倍之倍率)。 訂 第43圖係表示銅箔和矽薄膜在界面附近之穿透型電 子顯微鏡照片(50萬倍之倍率)。 第44圖係表示銅箔和矽薄膜在界面附近之穿透型電 子顯微鏡照片(1 0 〇萬倍之倍率)。 # 第45圖係表示電極cl上之混合層在深度方向之銅及 氮濃度分布圖。 第46圖係表不電極c3上之混合層在深度方向之銅及 氩濃度分布圖。 [元件符號說明] 財 產 pf 1 1 正 極 2 負 極 局 員 工 3 隔 板 4 正 極击 消 費 人 5 負 極 缶 6 正 極蓄電 體 社 7 負 極 蓄電體 8 絕緣墊料 印 製 20 基板 21 等 離子體 源 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 X 297公釐 311933 A7 五、發明說明(15 23 氫等離子 25 微波電力 22 等離子產生室 24 電子光束鎗 26 氫氣 [本發明之最佳實施形態] 以下就本發明依會— 、&例詳細說明。Y日本發明不偏户 下述實施例之範圍,在不鍵s飞月仁本發明不侷限在 ”當變更而實施之。…發明宗旨之範圍内’可以 (負極之製造) 使用乾製銅箔(厚声兔 /0. 、 1与又為18#瓜)為基板,另使用矽烷 (hH4)為原料氣體,俊# 使用虱虱為載體氣體,藉CVD法在鋼 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 f上形成微結晶石夕薄臈。具體而言,在反應室之加熱器上 -置㈣做為基板,利用真空排氣裝置,排氣到反應室中 、垄力成為IPa以下。然後,將氣體原料之矽烷(s^4)和 載體氣體之氫氣,由氣體原料導入孔導入,用加熱器加熱 基板至18GC °利用真空排氣裝置調整真空度為反應壓 力以同週波電源激起高週波,由電極導入該高週波誘導 輝光放電。詳細的薄膜形成條件表示於表丨中。又,表j 中之流Ϊ單位SCCm為〇〇C,1氣壓(1〇1 33kpa)下1分鐘之 體積 里(cm /分)’乃 Standard Cubic Centimeters Per Minute之簡寫。 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) 15 311933 515124 Α7 Β7 五、發明說明(16 ) 表 項目 形成膜時 1 0 seem 載體氣體氫氣(H2)流量 基板溫度 反應壓力 高週波電力 200 seemAt ′, the electrode a8 of the present invention has a shape of a germanium film after charging and discharging. * 3, a sacrifice-type electron microscope photograph (5000 times magnification). Fig. 33 is a scanning electron microscope photograph (1000-times magnification) showing the shape of the germanium film of the electrode a8 of the present invention after charging and discharging. Fig. 34-"I" shows a scanning electron microscope photograph (5000 times magnification) of the germanium film Xin of the electrode a8 of the present invention after charging and discharging, viewed from a slightly oblique direction. ^^ 3 5 Figure Γ ^ ΐ is a scanning electron microscope photograph (1000 times magnification) showing the shape of the germanium film '7 of the electrode a7 of the present invention before charging and discharging. Figure 36 shows the electrode a8 of the present invention being charged and discharged. Scanning electron microscope photograph (1000 times magnification) of the germanium thin film-like shape before discharge viewed from above. Figure 37 is a diagram showing the concentration distribution of the constituent elements of the germanium thin film of the electrode a7 of the present invention in the depth direction. --------------------- ^ --------- ^ (Please read the notes on the back before filling this page) This paper size applies (G x 297 public love) 13 311933 515124 A7 B7 V. Description of the invention (14) The figure shows the concentration distribution diagram of the germanium film of the electrode a8 of the present invention in the deep. It also shows to the figure 39 According to the present invention, the scanning electrode electron microscope photograph (2000 times magnification) is taken from the judgment of the other electrode al 1. Fig. 40 is a scanning electron microscope photograph (1000 times magnification) showing a cross section of the electrode 1 of the present invention, and is also an enemy of the present invention. Fig. 41 is a diagram showing the electrode before charging and discharging of the present invention. Scanning electron microscope photograph (1000 times magnification) of silicon thin film viewed from above. Figure 42 is a scanning electron microscope photograph (100%) of the silicon film of electrode 后 after charging and discharging according to the present invention is viewed from above. 〇 × magnification). Figure 43 shows the transmission electron microscope photograph of copper foil and silicon film near the interface (magnification of 500,000 times). Figure 44 shows the copper foil and silicon film near the interface. Photograph of a transmission electron microscope (magnification of 1 million times). # Figure 45 shows the distribution of copper and nitrogen concentration in the depth direction of the mixed layer on the electrode cl. Figure 46 shows the mixed layer on the electrode c3. Copper and argon concentration distribution map in the depth direction. [Description of element symbols] Property pf 1 1 Positive electrode 2 Negative staff 3 Separator 4 Positive strike consumer 5 Negative electrode 6 Positive electrode battery company 7 Negative electrode battery 8 Margin printed 20 substrate 21 Plasma source This paper size applies Chinese National Standard (CNS) A4 specification (21 × 297 mm 311933 A7) V. Description of invention (15 23 Hydrogen plasma 25 Microwave power 22 Plasma generation chamber 24 Electronics Beam gun 26 Hydrogen [The best embodiment of the present invention] The present invention will be explained in detail in accordance with the following examples. Y Japanese inventions do not bias the scope of the following embodiments, and the present invention is not limited to non-bonded flying moons. "When the change is implemented. … Within the scope of the invention's purpose (manufacturing of the negative electrode) using dry copper foil (thick-sound rabbit / 0., 1 and 18 # melons) as the substrate, and using silane (hH4) as the raw material gas, Jun # uses Lice is the carrier gas, and microcrystalline stone slabs are formed on the printed f by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Steel Economy by CVD. Specifically, a heater is placed on the heater of the reaction chamber as a substrate, and a vacuum exhaust device is used to evacuate the reaction chamber to an IPa or less. Then, the silane (s ^ 4) of the gas raw material and the hydrogen gas of the carrier gas are introduced through the gas raw material introduction hole, and the substrate is heated to 18GC with a heater. The vacuum degree is adjusted by the vacuum exhaust device to the reaction pressure, which is excited by the same cycle power source. High frequency, which is induced by the electrode to induce a glow discharge. The detailed film formation conditions are shown in Table 丨. In addition, the flow unit SCCm in Table j is 0 ° C, and the volume in centimeters (cm / min) at 1 atmosphere (1103 kpa) is an abbreviation of Standard Cubic Centimeters Per Minute. This paper scale is applicable to China National Standard (CNS) A4 specification (210 x 297 mm) 15 311933 515124 A7 B7 V. Description of the invention (16) Table item 1 10 seem carrier gas hydrogen (H2) flow substrate temperature reaction pressure High frequency power 200 seem

180°C 40 Pa180 ° C 40 Pa

555W _|本 經濟部智慧財產局員工消費合作社印製 以上述條件堆積微結晶矽薄膜之膜厚到達約l〇 # m為 止。然後用電子顯微鏡(200萬倍)觀察時,由微小結晶料所 構成結晶領域之周圍配置有非晶質領域之狀態,可確認為 非結晶。其次,所得試料經沖壓成為直徑17mm而獲得電 極al °將與電極al相同者在400°C下熱處理3小時,而得 電極a2。 又,為比較用途,混合市面上販售之單結晶矽粉末(粒 控為10 # m)90重量份,黏結劑之聚四氟乙烯重量份, 再以直徑為17mm之鑄模沖壓加壓成形而製成錠狀之電極 b 1 〇 (正極之製造) 使用Li/O3和C0CO3為開始原料,使鐘和録之原子 比率為1: 1經秤量後在研鉢中混合,利用直徑為17mm之 鑄模加壓成形之後,在空氣中以8(rc焙燒24小時而得 LiCo〇2之焙燒體,將此在研鉢中研碎成平均粒徑為⑽以㈤ 之粉末。 所得之LiCo〇2之粉末80重量份,做為導電材料之乙 ϋ重量份,黏結劑ϋ四氟乙烯10重量份,經混 (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂----- # 515124 A7 五、發明說明(Π 後在直徑為17mm之鑄模中沖壓加壓成形而獲得錠狀之正 極。 (電解液之製造) (請先閱讀背面之注意事項再填寫本頁) 石反酸乙烯酯和碳酸二乙酯之相同體積混合溶劑中,溶 解LiPF0 1莫爾/公升而製成電解液,使用於以下電池之 造中。 彳 | (電池之製造) 使用上述之電極al、a2以及bl為負極,再用上述正 極及電解液製造扁平形之鋰二次電池。 第1圖係所製得之鋰二次電池之剖面模式圖,由正極 1、負極2、隔板3、正極缶4、負極缶5、正極蓄電體6、 負極蓄電體7以及聚丙烯製絕緣墊料8所構成。 正極1和負極2係介由隔板3而相對向。這些均收容 在由正極缶4和負極缶5所形成之電池匣内。正極丨介由 瞻正極畜電體6連接在正極缶4,負極2介由負極蓄電體7 連接在負極缶5,為可以充電和放電之二次電池之構造。 經濟部智慧財產局員工消費合作社印製 使用電極al為負極者做為電池A1,使用電極^為負 極者做為電池A2,使用電極bl為負極者做為電池B1。 (充放電循環壽命特性之測定) 在25t下,以電流值l〇0/i A充電到負極容量達2〇〇〇mAh/g 之後再放電,以此做為一個循環之充放電,且就各個電池 測定第50個循環時之容量維持率。另外,無法充電到 2000mAli/g之電池(B1),則充電到4.2V之後,藉由放電進 行循環試驗。將其結果顯示於表2。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 17 311933 515124 五、發明說明(1S ) 〜表2中’將各電池之負極活性物質藉由SIMS測定所 付虱氣濃度,拉曼光譜分析所得之附近/52〇 cm-i 附近之兩峰強度比率’以及根據χ光衍射譜和氏 式所計算之結晶粒程加以—併表示之。又,電池(bi)之結 晶粒捏可能和粉末粒徑幾乎相同,因此以粉末粒徑表示 表 電池 第5 0循環之 容量維持率 TTST" 含量 A1 85% 4%^ A2 7 8% 0.01% B1 5% 0% 高峰強度比 (480^/520 cn 結涵 粒徑 0.1 0.1 lnm (請先閱讀背面之注意事項再填寫本頁) T裝 lnm 1 〇 “ m 由表2所示結果顯示本發明之電池AUA2與對昭 電池(B1)相比’其容量維持率顯然很高。 如上所述,藉由使用微結晶石夕薄膜做為負極活性物 質,使鐘二次電池之充放電循環特性得以顯著改呈。德 晶石夕薄膜上’當吸存、料^際,其膨脹㈣得到緩和 因此能抑制負極活性物質之微粉狀化,據推 特性之劣化。 1 實驗2 使用電解銅羯(18心厚度)做為蓄電體之基板 其他皆按照上述實驗!之電池A1同樣在電解鋼箱 微結晶矽薄膜(約10#m厚度)而製得電極 乂 製成電池A3。 吏用該售 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱 311933 tr---------參- 經濟部智慧財產局員工消費合作社印制取 515124 A7 B7 五、發明說明() --------------^--- (請先閱讀背面之注意事項再填寫本頁) 實驗1所使用之軋製銅箔之表面以 紙研磨處理-分鐘而製成㈣,使用.此鋼二=號砂 基板之外,其他皆按照上述實^之電池:二^ 上形成微結晶矽薄膜(約l〇“m厚度)而製得 ,5 /白 4。〇號砂紙研磨者做為電極“,而以12。 研 ^也八4和八5。驗1同樣方法製得電 就這些電池A3至A5以及上述實驗】所製成之電池 及電池B1,按照與上述實驗Μ樣之充放電猶環條件 進行充放電循環試驗’求得第1G循環之容量維持率。並社 果不於表3。又’表3中’將電池A1及電池Βι之蓄電: 的銅箱以及電池A3至A5之蓄電體的鋼落之表面粗糙度 (Ra)以及局部山峰之平均間隔一併表示之。 又 鋼箔之表面粗糙度(Ra)以及局部山峰之平均間隔 -丨線· •乃使用觸針式表面形狀測定儀Dektak ST型(曰本真空技 社製I,測定距離設定在2.0mm而測定之。表面粗、糙^度j 之計算在修正彎曲部分後進行之。彎曲之修正所使用之 經濟部智慧財產局員工消費合作社印製555W _ | Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The film thickness of the microcrystalline silicon film deposited under the above conditions has reached about 10 # m. When it was observed with an electron microscope (2 million times), it was confirmed that the amorphous region was arranged around the crystal region composed of the fine crystal material, and it was confirmed that it was amorphous. Next, the obtained sample was punched to a diameter of 17 mm to obtain an electrode al °, which was heat-treated at 400 ° C for 3 hours at the same temperature as the electrode al to obtain an electrode a2. For comparison, 90 parts by weight of monocrystalline silicon powder (grain control 10 # m) on the market, and parts by weight of polytetrafluoroethylene as a binder are mixed, and then a 17 mm diameter die is pressed and formed. The ingot-shaped electrode b 1 0 (manufactured as a positive electrode) was made using Li / O3 and COCO3 as starting materials, and the atomic ratio of the bell and the record was 1: 1. After weighing, they were mixed in a mortar and a 17 mm diameter mold was used. After compression molding, a LiCo0 2 calcined body was obtained by firing at 80 ° C. for 24 hours in the air, and this was ground in a mortar to obtain a powder having an average particle size of ⑽ to 。. The obtained LiCo 02 powder 80 Parts by weight, as the weight parts of acetic acid for conductive materials, and 10 parts by weight of teflon binder, mixed (please read the precautions on the back before filling this page) 515124 A7 V. Description of the invention (After the Π is pressed and formed in a 17mm diameter die to obtain an ingot-shaped positive electrode. (Manufacture of electrolyte) (Please read the precautions on the back before filling this page) Ester and diethyl carbonate in the same volume of mixed solvent, dissolve LiPF0 1 mole / liter and An electrolytic solution was prepared and used in the following batteries. 彳 | (manufacturing of batteries) The above-mentioned electrodes al, a2, and bl were used as negative electrodes, and the above-mentioned positive electrodes and electrolytic solution were used to manufacture flat lithium secondary batteries. The diagram is a schematic cross-sectional view of the lithium secondary battery produced, which is composed of positive electrode 1, negative electrode 2, separator 3, positive electrode 缶 4, negative electrode 缶 5, positive electrode electric storage body 6, negative electrode electric storage body 7, and polypropylene insulating gasket. The positive electrode 1 and the negative electrode 2 are opposed to each other through the separator 3. These are housed in a battery case formed by the positive electrode 缶 4 and the negative electrode 缶 5. The positive electrode is connected to the positive electrode animal body 6 through The positive electrode 缶 4 and the negative electrode 2 are connected to the negative electrode 缶 5 through the negative electrode electricity storage body 7, which is a secondary battery structure that can be charged and discharged. The employee's cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the electrode al as the negative electrode as battery A1 Use electrode ^ as the negative electrode as battery A2, and use electrode bl as the negative electrode as battery B1. (Measurement of charge-discharge cycle life characteristics) At 25t, charge with a current value of 100 / i A to the capacity of the negative electrode. Discharge after 2000mAh / g as this Charge and discharge for one cycle, and measure the capacity retention rate at the 50th cycle for each battery. In addition, if the battery (B1) that cannot be charged to 2000 mAli / g is charged to 4.2 V, perform the cycle test by discharging. The results are shown in Table 2. The paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 17 311933 515124 V. Description of the invention (1S) ~ Table 2 'Use the negative active material of each battery by The lice gas concentration measured by SIMS, the ratio of the two peak intensities in the vicinity / 52cm-i near Raman spectrum analysis', and the crystal grain size calculated from the X-ray diffraction spectrum and the equation are given and expressed. In addition, the crystal grain size of the battery (bi) may be almost the same as the particle size of the powder. Therefore, the capacity maintenance rate of the 50th cycle of the watch battery is represented by the particle size of the battery. TTST " Content A1 85% 4% ^ A2 7 8% 0.01% B1 5% 0% peak intensity ratio (480 ^ / 520 cn knot culvert particle size 0.1 0.1 lnm (please read the precautions on the back before filling out this page) T device lnm 1 〇 “m The results shown in Table 2 show the The battery AUA2 has a significantly higher capacity retention rate compared to the Zhao battery (B1). As mentioned above, by using microcrystalline Shixiya film as the negative electrode active material, the charge and discharge cycle characteristics of the clock secondary battery can be significantly improved. Represented. On the crystallized sapphire film, when the storage and material are stored, its swelling is reduced, so it can suppress the micronization of the negative electrode active material, and the deterioration of the characteristics is expected. 1 Experiment 2 Use of electrolytic copper (18) Heart thickness) as the substrate of the electricity storage body. All other tests were carried out in accordance with the above experiment! The battery A1 was also made of a microcrystalline silicon film (about 10 # m thick) in an electrolytic steel box. The battery was then made into a battery A3. Standards apply to China National Standard (CNS) A4 specifications (210 X 297 Public Love 311933 tr --------- Participate-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 515124 A7 B7 V. Description of the invention () ----------- --- ^ --- (Please read the precautions on the back before filling in this page) The surface of the rolled copper foil used in Experiment 1 was made of paper by grinding for one minute, and used. This steel two = No. sand Except for the substrate, all other batteries were prepared in accordance with the above-mentioned battery: a microcrystalline silicon film (about 10 "m thickness) was formed on the substrate, and 5 / white 4.0 sander was used as an electrode", and 12. Research 八 8 and 55. Test 1 The same method was used to obtain electricity. These batteries A3 to A5 and the above-mentioned battery] and battery B1 were prepared according to the same charge and discharge conditions as those in the above-mentioned experiment M. Charge-discharge cycle test 'to obtain the capacity maintenance rate of the 1G cycle. The social results are not shown in Table 3. Also in Table 3, the battery storage of battery A1 and battery Bι: the copper box and the storage bodies of batteries A3 to A5. The surface roughness (Ra) of steel drops and the average interval of local peaks are shown together. The surface roughness (Ra) of steel foil and the average interval of local peaks-丨 Line · • It is measured by using a stylus-type surface shape measuring instrument Dektak ST type (I made by Japan Vacuum Technology Co., Ltd., the measurement distance is set at 2.0mm. The surface roughness and roughness j are calculated after correcting the bent part. The .bending amendment is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

正值係低通值=20/zm,高通值=20 am。表面粗糙度(R 乃自動计异而得之值,局部山峰之平均間隔§係由圖表 判讀之值。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 19 311933 515124 五、發明說明(2〇 ) 表3 電池 第1 〇循環之 容量維持率 A1 表面粗楗度 0.037 ~—-—— _ 0.188 t電體(銅箔) 平均間隔 S( // m) A3 97% 99% 14Positive values are low-pass value = 20 / zm and high-pass value = 20 am. Surface roughness (R is a value obtained by automatic calculation. The average interval of local peaks § is a value judged from the chart. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 19 311933 515124 5 Description of the invention (20) Table 3 Capacity maintenance rate of battery 10th cycle A1 Surface roughness 0.037 ~ ----_ 0.188 t Electric body (copper foil) Average interval S (// m) A3 97% 99 % 14

經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 由表3所示結果顯+7 I & 衣顯不可知使用表面粗糙度Ra值大 之銅羯為蓄電體之電池A3至A5較表面粗糙度Ra值小之 銅猪為蓄電體之電池A1,其第1〇循環之容量維持率向上 提昇。此乃由於使用|面粗糖度心值大之銅猪為蓄電體, 蓄電體和活性物質之緊貼性提升,於吸存、釋放鐘之際, 推測可減低因活性物質之膨脹收縮所造成活性物質之 等構造變化之影響。 實驗3 就上述實驗!所製得電池A1和上述實驗2所製池A3’按照與上述實驗!同樣之充放電循環條件,再^ 充放電循環試驗,求得第30循環之容量維持率。 仃 表不於表4 〇 果 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 X 297公爱 311933 ^--------^--------- (請先閱讀背面之注意事項再填寫本頁) 、發明說明( 表4 電池 A1 A3 夺率 _ 91% 97% 經濟部智慧財產局員工消費合作社印製 由表4中之結果顯示在第3〇循環後’電池幻和Α3 好的容量維持率。特別是表面粗糙度h值大之 鋼泊為畜電體之電池A3顯示更優異之容量維持率。 因此’就電池A3所使用之電極a3之石夕薄膜之狀態進 :丁:子顯微鏡觀察。首先,就組合在電池之前的狀態,也 沈'充放電前之狀態的電極a3用掃描型電子顯微鏡觀察 之。第2圖和第3圖分別表示充放電前之電極以掃描型 電子顯微鏡照片(二次電子影像)。第2圖之倍率為2〇〇〇 倍,而第2圖之倍率5000倍。 試料之製造乃將電極用樹脂包埋,將其裁成切片而觀 察。第2圖中,上方端部及下方端部所觀察之層,以及第 3圖中上方端部所觀察之層就是上述包埋樹脂層。 第2圖和第3圖中,稍明亮部分表示銅箔部分,鋼箔 上稍黑暗部分形成有矽薄膜(約1 〇 # m厚度)。如第2圖和 第3圖所示’銅箔表面形成有凹凸’其中凸部特別成為錐 狀體。然後,其上面所設置之矽薄膜表面也和銅箔之凹凸 同樣形成有凹凸。所以推測矽薄膜表面之凹凸係由銅箱表 面之凹凸所形成。 其次就由上述第30循環後之電池A3所取出之電杨a3 同樣用樹脂包埋而進行掃描型電子顯微鏡觀察二又,電極 私紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 311933 ^-----------------$ (請先閱讀背面之注意事項再填寫本頁) M5124 ___B7 五、發明說明(22 a3乃放電後取出,所以 第4圖和第5S表電後狀態者。 顯微鏡照片(二=表 =放Γ之電極h之掃描型電子 第5圖之倍率為25〇^ 圖之倍率為5〇0倍,而 切縫H圖和第5圖所示,梦薄膜在其厚度方向形成有 • I縫’可知矽薄膜分離成為柱狀。又 ,成在厚度方向’而在面方向幾乎沒有形成,因此: :分之底部可知緊貼在蓄電體之銅箱上。又,柱狀部= :部分為帶有圓狀’可知從充放電前之碎薄膜表面之凹 凸部分之谷部分有切縫形成。 广再以掃描型電子顯微鏡觀察充放電後之電極33之石夕 涛膜表面。第6圖和第7圖乃石夕薄膜表面自上方觀察之 為型電子顯微鏡照片(二次電子影像),第6圖之倍率為 讓倍’第7圖之倍率為5000倍。第8圖和第9圖為矽 薄膜表面自稍斜方向觀察之掃描型電子顯微鏡照片(二次 電子影像),第8圖之倍率為1000倍,而第9 人 5000倍。 口 <借羊為 、如第6圖至第9圖所示,矽薄膜之柱狀部分之周圍形 成有切縫,與鄰接之柱狀部分設有孔隙。因此,當充電= ,,矽薄膜吸藏鋰時,即使柱狀部分膨脹而增加其體積, 藉由於柱狀部分之周圍形成之孔隙,推測能吸收該增加之 體積。又,放電之際,因矽薄膜之柱狀部分釋放鋰而收縮, 體積再度減少,且於柱狀部分周圍形成有孔隙。藉由上述 I k種^之柱狀構造,能緩和充放電之際,因活性物質 本紙張尺度適用票準(CNS)A4規格(21G X 297公釐)" ----—-^ 22 311933 訂 # 經濟部智慧財產局員工消費合作社印製 515124 A7Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The results shown in Table 3 show +7 I & clothing display. It is not known that the use of copper with a large surface roughness Ra value as the power storage battery A3 to A5 is lower than the surface roughness Ra value. The small copper pig is the battery A1 of the power storage body, and the capacity maintenance rate of the 10th cycle is increased. This is due to the use of copper pigs with a large surface sugar content and a large heart value as the electricity storage body. The closeness between the electricity storage body and the active substance is improved. It is speculated that the activity caused by the expansion and contraction of the active substance can be reduced during storage and release of the bell Influence of structural changes such as matter. Experiment 3 The above experiment! The obtained battery A1 and the above-mentioned cell A3 ′ of the above-mentioned experiment 2 are in accordance with the above-mentioned experiment! Under the same charge-discharge cycle conditions, the charge-discharge cycle test was performed again to obtain the capacity retention rate at the 30th cycle.仃 Not shown in Table 4 〇 The size of the fruit paper is applicable to China National Standard (CNS) A4 (21〇X 297 Public Love 311933 ^ -------- ^ --------- (please first Read the notes on the back and then fill out this page), the description of the invention (Table 4 Battery A1 A3 Capture rate _ 91% 97% Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The results in Table 4 are displayed after the 30th cycle ' Battery magic and A3 have good capacity maintenance rate. In particular, the battery A3 with steel surface with a large surface roughness h value as a livestock electric body shows a better capacity maintenance rate. Therefore, the 'Shishi film of the electrode a3 used for battery A3 The state is as follows: D: submicroscopic observation. First, the electrode a3, which is in the state before the battery and also before the charge and discharge, is observed with a scanning electron microscope. Figures 2 and 3 show the charge and discharge, respectively. The previous electrode was taken with a scanning electron microscope (secondary electron image). The magnification of the second figure is 2000 times, and the magnification of the second figure is 5000 times. The sample is manufactured by embedding the electrode with resin and embedding it. Cut into slices and observe. Figure 2 shows the upper and lower ends. The layer observed at the upper end in Figure 3 is the above-mentioned embedded resin layer. In Figures 2 and 3, the slightly brighter part indicates the copper foil part, and the darker part on the steel foil is formed with a silicon film (about 1 〇 # m thickness). As shown in Figures 2 and 3, "the copper foil surface is uneven," in which the convex part is particularly a cone. Then, the surface of the silicon film provided thereon is also formed in the same manner as the copper foil unevenness. There are irregularities. Therefore, it is speculated that the irregularities on the surface of the silicon film are formed by the irregularities on the surface of the copper box. Secondly, the electric Yang a3 taken out from the battery A3 after the 30th cycle described above is also embedded with a resin for scanning electron microscope observation. In addition, the size of the electrode paper is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 311933 ^ ----------------- $ (Please read the precautions on the back first Fill out this page again) M5124 ___B7 V. Description of the invention (22 a3 is taken out after discharging, so Figure 4 and 5S are after the state of electricity. Micrograph (2 = Table = scanning electron of electrode Γ) 5 The magnification of the graph is 25 × ^ The magnification of the graph is 5000 ×, and the slit H graph As shown in Fig. 5, the dream film is formed in the thickness direction. • The seam can be seen that the silicon film is separated into columns. In addition, the film is formed in the thickness direction and hardly formed in the plane direction. On the copper box of the electricity storage body. In addition, the columnar part =: part is rounded. It can be seen that there is a slit formed in the valley portion of the uneven portion on the surface of the broken film before charging and discharging. The surface of the Shi Xitao film of the electrode 33 after charging and discharging. Figures 6 and 7 show the type of the electron microscope (secondary electron image) of the Shi Xi film surface viewed from above. The magnification of FIG. 7 is 5000 times. Figures 8 and 9 are scanning electron microscope photographs (secondary electron images) of the silicon film surface viewed from a slightly oblique direction. The magnification of Figure 8 is 1000 times, and the 9th person is 5000 times. Mouth < As shown in Figs. 6 to 9, a slit is formed around the columnar portion of the silicon film, and a hole is provided with the adjacent columnar portion. Therefore, when the charge =, the silicon film occludes lithium, and even if the columnar portion expands to increase its volume, it is estimated that the increased volume can be absorbed by the pores formed around the columnar portion. In addition, during discharge, lithium was contracted by the columnar portion of the silicon film, the volume was reduced again, and pores were formed around the columnar portion. With the columnar structure of the above-mentioned I k kinds of ^, it is possible to ease the charge and discharge, because the paper size of the active material is applicable to the standard (CNS) A4 (21G X 297 mm) " ----——- ^ 22 311933 Order # Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 515124 A7

311933 515124 A7 五、發明說明(24 ) 11釋放鐘而體積會收縮。此時’石夕薄膜u内產生拉伸應 力。該應力係集中在㈣_之表面iu凹凸之 應 因此,如第!。圖⑷所示,以谷部m為起點在厚;向 形成切刻12,按照這樣形成之切们2可使應力釋放 石夕薄膜11不致於從鋼落10剝離,而使石夕薄膜U收縮。 按照上速分離成為柱狀之m 電循環中,如上述,藉由來忐少心⑴ 、瓦々九i 猎由开"成在柱狀部分之周圍的孔隙, 缓和活性物質之膨脹收縮,倭 性物質不致於從蓄電體剝 離而此一再重複進行充放電循環。 為更進/檢4上述石夕薄膜所形成切縫之機制,就電 解銅落上形成有膜厚約10…微結晶石夕薄膜之電極a3 以穿透型電子顯微鏡觀察。第„圖係表示充放電前之電極 u之剖面穿透型電子顯微鏡照片(倍率為125〇〇倍)。觀察 用試料係以樹脂包埋電極再進行切片而得。 “第目係表不第i!圖所不之穿透型電子顯微鏡照片 之杈式圖。在第11圖所示之穿透型電子顯微鏡照片中,如 第13圖所示,在電解鋼落1〇之表面…上形成有石夕薄膜 11又於牙透型電子顯微鏡照片中,石夕薄膜i i以較銅謂 ^明亮部分表示之。觀察第η圖中所示㈣膜u時,石夕 薄膜11之表Φ la凹凸之谷部llb和鋼帛1〇之表面⑽ 凹凸之奋部10b的連接領域,可觀察到較明亮部分。第U 时’該明亮部分以A ^及c以—點鏈線表示之。特別 疋用A所示領域令,可明確地觀察到明亮部分。該領域乃 ,矽薄^較低領域’亦即推測為低密度領域部分。 本紙張尺度票準(CNS)A4 24 311933 -----------•-裝 (請先閱讀背面之注意事項再填寫本頁} 11 — — — — — — MW, J丄J丄厶呻 A7 —_B7 五、發明說明(25 為更詳細觀察此低密度領域,以與電極a3相同條件下,製 造電解銅箱上形成有臈厚約2#m之微結晶㈣膜之電極 a6 〇 —第12圖係表示藉穿透型電子顯微鏡以上述相同方法 觀察電極a6時之穿透型電子顯微鏡照片。第12圖中,其 裝 倍率為25_倍。帛14圖係表示帛12圖所示之穿透型電 子顯微鏡照片之模式說明圖。由第12圖中顯示電極“上, 在連接石夕薄膜11之表面lla凹凸之谷部m和銅箱⑺之 表面術凹凸之谷部⑽的領域D能觀察到低密度領域。 再誶細觀察第12圖之照片時,第14圖中用箭頭所示之方 向延伸的微細線條能切薄膜u中觀察而得。該線條可能 是伴隨矽薄膜之成長而形成者。因此’矽薄膜u可推測對 著銅落10之表面10A以略垂直方向成長。因此,按照這 種方向成長之石夕薄膜層’和鄰接的銅落表面之傾斜面上堆 積成,層在領域D處互相碰衝’其結果在領域〇處可能形 成低山度項i或此種石夕薄膜層之相碰延續到薄膜形成終了 時’推測因此低密度領域會繼續形成至矽薄膜之表面為 止。 Μ 第15圖係將電極a3之表面由上方觀察之掃描型電子 顯微鏡照片(第二次電子影像)。第15圖所示電極^乃充 放電前之狀態者。第15圖之倍率為1000倍。第15圖中, 明亮部分為石夕薄膜表面之凸部,其周圍之黑暗部分為石夕薄 膜表面之谷^如第15圖所示,㈣膜表面之谷部成為網 ,目狀連接。因此’石夕薄膜上之上述低密度領域可知以面方 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 25 311933 A7 五、發明說明(26 ) 向做網目狀連接而形成。此種網目狀之低密度領域,如第 11圖和第13圖所示,更朝向蓄電體而延伸在厚度方向。 又’第15圖中之黑暗部分並非切縫(空隙),可由第2圖和 第3圖所示掃摇型電子顯微鏡照片中在厚度方向觀察不到 切縫(空隙)而確定之。 第16圖係充放電前之狀態的電極“之表面由上方觀 察之掃描型電子顯微鏡照片(二次電子影像),其倍率為 倍。由第16圖中可知在電極36中,谷部也成為網目 狀連接,因此,可知低密度領域也在面方向成網目狀連接 而成。 :η圖顯示電極a6在石夕薄膜深度方向之構成元素濃 二:二:成=之濃度分布藉_,使…濺射 i;二 (―(Sl2+)之濃度而進行。第 圖中,板軸表示自石夕薄膜矣 溥臈表面起之深度(/zm),縱軸表 不各構成7L素之強度(計數)。 蓄電體成八楚H在蓄電體附近’梦薄膜上擴散有 成八之銅fc、S(CU)’愈罪近梦薄膜表面,可知其蓄電體 度愈減少。又,從銅剛度之連續性 化人物、θ,(Cu)之領域,並非形成#和銅之金屬間 化口物,而是形成石夕和鋼之固溶體。 考慮上述問題,藉夯 石夕薄膜在厚度方向形成:石夕薄膜之膨脹收縮所造成 第!〇圖所說明,由石夕薄膜體:機制,推測如下。即,參照 石夕薄膜表面凹凸之谷邱 積之膨服所產生應力,集中在311933 515124 A7 V. Description of the invention (24) 11 When the bell is released, the volume will shrink. At this time, a tensile stress is generated in the 'Shi Xi film u. The stress is concentrated on the surface ㈣ of the iu_, so the concavity and convexity of the surface should be the same! As shown in Figure ⑷, the thickness is from the valley m as the starting point; the cut 12 is formed, and the cuts 2 formed in this way can prevent the stress-relieving stone film 11 from peeling from the steel drop 10 and shrink the stone film U. . In the m electric cycle separated into columns in accordance with the upper speed, as described above, the pores around the columnar portion are formed by 忐 少 心 ⑴, 々 々, and 由 to reduce the expansion and contraction of the active substance. The sexual substance does not peel off from the electricity storage body, and the charge and discharge cycle is repeated repeatedly. In order to further advance / examine the mechanism of the slit formed by the above Shi Xi film, the electrode a3 with a film thickness of about 10 ... microcrystalline Shi Xi film formed on the electrolytic copper was observed with a transmission electron microscope. Figure „shows a cross-sectional transmission electron microscope photograph of electrode u before charging and discharging (12500 times magnification). Observation samples were obtained by slicing the electrode with resin and sectioning it. i! Photograph of a transmission electron microscope not shown in the figure. In the transmission electron microscope photograph shown in FIG. 11, as shown in FIG. 13, a stone evening film 11 is formed on the surface of the electrolytic steel 10, and in the dental electron microscope photograph, stone evening The thin film ii is indicated by a brighter part than copper. When the ㈣ film u shown in Fig. N is observed, the connection area between the surface lala of the uneven layer llb of the shixi film 11 and the surface 帛 of the ridge 10 of the steel ⑽ 10 has a brighter portion. At time U, the bright part is indicated by A ^ and c by a dotted chain line. In particular, the bright area can be clearly observed with the field command shown in A. This area is the lower silicon area, which is presumed to be part of the low density area. This paper standard ticket standard (CNS) A4 24 311933 ----------- •-installed (Please read the precautions on the back before filling out this page} 11 — — — — — — MW, J 丄 J丄 厶 呻 A7 —_B7 V. Description of the invention (25 In order to observe this low-density field in more detail, under the same conditions as the electrode a3, an electrode a6 with a microcrystalline ㈣ film with a thickness of about 2 # m is formed on the electrolytic copper box. 〇—Figure 12 shows a transmission electron microscope photograph when the electrode a6 is observed by a transmission electron microscope in the same manner as above. In Figure 12, the mounting magnification is 25 times. 帛 14 shows 系 12. A pattern explanatory diagram of the transmission electron microscope photograph shown. From FIG. 12, the electrode "is shown on the electrode" on the surface 11a of the concave-convex valley portion m of the Shixi film 11 and the surface of the copper box ridge. A low-density area can be observed in the area D. When the photos in FIG. 12 are further observed, the fine lines extending in the direction shown by the arrows in FIG. 14 can be cut into the film u. The lines may be accompanied by the silicon film It is formed by the growth. Therefore, the silicon film u can be inferred to the surface 10A of the copper drop 10 It grows in the vertical direction. Therefore, the Shi Xi thin film layer 'and the adjacent copper falling surface which are grown in this direction are piled up, and the layers collide with each other in the area D. As a result, a low mountain may be formed in the area 0 Item i or the contact of such a Shixi film layer continues until the end of film formation. 'It is speculated that low-density areas will continue to be formed until the surface of the silicon film. Μ Figure 15 is a scanning type in which the surface of electrode a3 is viewed from above Electron micrograph (second electron image). The electrode ^ shown in Fig. 15 is the state before charging and discharging. The magnification in Fig. 15 is 1000 times. In Fig. 15, the bright part is the convex part on the surface of Shi Xi film. The dark part around it is the valley on the surface of Shixi film. As shown in Figure 15, the valley on the surface of the diaphragm becomes a mesh and is connected in a mesh. Therefore, the above-mentioned low-density area on the Shixi film can be seen from the surface. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 25 311933 A7 V. Description of the invention (26) It is formed by mesh-like connection. This mesh-like low-density area is shown in Figure 11 and Figure 13 As shown in the figure, it extends toward the power storage body in the thickness direction. Also, the dark part in FIG. 15 is not a cut (gap), and can be viewed in the thickness direction from the scanning electron microscope photographs shown in FIGS. 2 and 3. It can be determined without a slit (gap). Figure 16 is a scanning electron microscope photograph (secondary electron image) of the surface of the electrode "in the state before charging and discharging. The magnification is doubled. From Figure 16 It can be seen that in the electrode 36, the valleys are also mesh-shaped, so it can be seen that the low-density area is also mesh-connected in the plane direction.: The figure shows that the electrode a6 is in the depth direction of the stone evening film. Second: the concentration distribution of Cheng = by _, so that ... sputtering i; two (-(Sl2 +) concentration to carry out. In the figure, the plate axis represents the depth (/ zm) from the surface of the Shixi film 矣 溥 臈, and the vertical axis represents the intensity (count) of each 7L element. The electricity storage body Cheng Bachu H has diffused copper fc, S (CU) 'on the surface of the dream film near the electricity storage body, and it can be seen that the electricity storage volume decreases. In addition, from the field of continuity figures of copper stiffness, θ, (Cu), instead of forming intermetallics of # and copper, a solid solution of Shixi and steel is formed. In consideration of the above problems, by compressing the Shixi film in the thickness direction: caused by the expansion and contraction of the Shixi film, as illustrated in Figure 10, the Shixi film body: mechanism is speculated as follows. In other words, referring to the unevenness of the valleys on the surface of the Shi Xi film, the stress generated by the swelling is concentrated on

Wf尺产、同時’由該谷部朝下方之蓄電體 311933 訂 # 515124 五、發明說明(27 ) 事先有低密度領域存在,該低密度領域係機械強度低的部 分,因此,沿著該低後度領域形成切縫(空隙)而造成。 更如第17圖所示,矽薄膜中有蓄電體成分之銅元素之 擴散,而且在蓄電體附近銅濃度高,而愈靠近矽薄膜表面, 具有銅濃度減少之濃度梯度。因此,在蓄電體附近不與鋰 反應之銅濃度變高,與鋰反應之矽濃度變小。所以,蓄電 ,體附近鐘之吸存、釋放較少,因此,石夕薄膜之膨脹收縮也 相對變小。所以’蓄電體附近之矽薄膜所產生應力變小, 而在蓄電體附近’报難產生石夕薄膜自蓄電體剝離或脫離之 切縫(空隙),石夕薄膜之柱狀部分之底部可與蓄電體保持緊 貼狀態。 按照上述藉由形成切縫而分離成為柱狀之石夕薄膜,即 使在充放電循環時’和蓄電體很強固地緊貼一起,且藉由 形成在柱狀部分之周圍的空隙,用以緩和伴隨充放電』環 〖時薄膜之膨練縮’故可獲得優異之充放電循環特性。 實驗4 (電極a7之製造) 錢電極a3所用相同電解_做為蓄電體之基板,其 上面糟RF錢射法形成非晶曾 得電極a7。 A非曰曰質鍺缚_厚約⑹㈣而製 薄膜形成條件如下,目#· 田.目標·鍺,濺射氣體氬(Ar),流 置.lOOsccm,基板溫度:室溫 、 高週波電力為200W。 熱)’反應壓力:(MPa, _譜分析結果,在274 <附 本而尺度適用中國國家標〒 (請先閱讀背面之注意事項再填寫本頁) -裝--------訂· •線· •I n ϋ n - 27 311933 ^1M24 五、發明說明(Μ 近觀察到高峰存在,但300 cm-i附近之高峰未檢出,由此 可知所得鍺薄膜能確定為非晶質鍺薄膜。 -----------_裝 (請先閱讀背面之注意事項再填寫本頁) (電極a8之製造) 使用和電極a7之蓄電體相同之電解銅箔,藉蒸鍍法在 上面形成非晶質鍺薄膜(厚度約為2 // m)而製得電極a8。 具體言之,使用第18圖所示構造之裝置而形成錯薄膜 於基板上。參照第i 8圖,其ECR等離子源(Plasma source)21 ’设置有等離子產生室22,供應微波電力25及 氮氣(26)到等離子產生室22。當供給微波電力(25)給等離 子產生室時,就能產生氬等離子。將此氫等離子23從等離 子產生至22導出’並照射在基板2〇上。基板20之下方設 有電子光束(EB)鎗(24),由電子光束鎗(24)射出之電子光 束’將鍺薄膜堆積在基板20上。Wf scale production, and at the same time, the electricity storage body 311933 from the valley part to the bottom. 515124 V. Description of the invention (27) A low-density area exists in advance. This low-density area is the part with low mechanical strength. It is caused by the formation of cuts (voids) in the rear area. As shown in FIG. 17, the silicon thin film has the diffusion of copper element of the electricity storage component, and the copper concentration is higher near the electricity storage body, and the closer to the surface of the silicon thin film, there is a concentration gradient in which the copper concentration decreases. Therefore, the concentration of copper that does not react with lithium in the vicinity of the electricity storage body becomes higher, and the concentration of silicon that reacts with lithium becomes smaller. Therefore, the electricity storage has less absorption and release of the bell near the body, so the expansion and contraction of the Shi Xi film is relatively small. Therefore, the stress generated by the silicon thin film near the electric storage body becomes smaller, and near the electric storage body, it is difficult to generate a cut (gap) in which the Shi Xi film peels or detaches from the electric storage body. The bottom of the columnar part of the Shi Xi film can be connected with The power storage body is kept in close contact. According to the above, the slit-like thin film is formed by forming a slit, and even during the charge-discharge cycle, it closely adheres to the electricity storage body, and the gap formed around the columnar portion is used to relax With charge-discharge "ring [time expansion and contraction of the film ', excellent charge-discharge cycle characteristics can be obtained. Experiment 4 (manufacturing of electrode a7) The same electrode_3 used for the money electrode a3 was used as the substrate of the electricity storage body, and an amorphous electrode a7 was formed on it by RF irradiation. A non-descriptive quality germanium bond_thickness and thickness of the thin film formation conditions are as follows, mesh # · field. Target · germanium, sputtering gas argon (Ar), flowing. 100sccm, substrate temperature: room temperature, high cycle power is 200W. (Heat) 'Reaction pressure: (MPa, _Spectral analysis results, in 274 < attached version and the standard applies to Chinese national standards 〒 (Please read the precautions on the back before filling out this page)-installed -------- Order · • Line · • I n ϋ n-27 311933 ^ 1M24 V. Description of the invention (M peak was observed recently, but a peak near 300 cm-i was not detected, which shows that the obtained germanium film can be determined to be amorphous Quality germanium film. -----------_ (Please read the precautions on the back before filling this page) (manufacturing of electrode a8) Use the same electrolytic copper foil as the electricity storage body of electrode a7. An electrode a8 is formed by forming an amorphous germanium thin film (thickness about 2 // m) on the vapor deposition method. Specifically, an error thin film is formed on a substrate by using a device having a structure shown in FIG. 18. Figure 8. The ECR Plasma source 21 'is provided with a plasma generating chamber 22, which supplies microwave power 25 and nitrogen (26) to the plasma generating chamber 22. When microwave power (25) is supplied to the plasma generating chamber, it can An argon plasma is generated. This hydrogen plasma 23 is led out from the plasma generation to 22 and is irradiated on the substrate 20. The substrate 2 Below the zero, an electron beam (EB) gun (24) is provided, and an electron beam ′ emitted from the electron beam gun (24) deposits a germanium film on the substrate 20.

I I I 經濟部智慧財產局員工消費合作社印製 在堆積鍺薄膜於基板之電解銅络上之前,將氬等離子 照射於基板上以進行前處理。反應室内之真空度調整為約 〇.〇5Pa(約5χ 10·4Τ〇ιτ),氫氣流量為40sccm,供應之微波 電力為200W而將氫等離子照射在基板上。照射氫等離子 之際’基板上外加-100V之偏壓電壓。照射氫等離子15分 鐘而進行前處理。 其次,藉電子光束鎗,以蒸鍍速度lnm/秒(1〇 A /秒) 在基板上堆積鍺薄膜。基板溫度為室溫(不加熱)。 就所得之鍺薄膜進行拉曼光譜分析,結果和電極a? 同樣確定其為非晶質鍺薄膜。 (電極b2之製造) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 28 311933 515124 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(¾ ) 使用平均粒杈為1〇"m2鍺粉末,以鍺粉末重量 份,導電材料之乙炔黑10重量份,黏接劑之聚四氮乙稀 10重量份混合’使用直徑17mm之鏵模將其沖壓加壓成形 製得欽狀之電極b2。 (電池之製造) 使用上述之電極37、38和b2為負極,其他皆與實驗 .1所示相同方法製得鋰二次電池。使用電極a7為負極做為 電池A7 ’使用電極a8為負極者做為電池A8,而使用電極 b2為負極者做為電池B2。 (充放電循環特性之評估) 、就上述各種電池在2 5 C下,以G. 1 m a之電流充電到電 壓為4.2V之後,再放電到充電電壓成為2爪,以此為充 放電之一個循環,測定第10循環時之容量維持率。將其測 疋結果表不於表5。 表5 電池 第1 〇循環之容量維持率 A7 96% A8 93% B2 3 9% 由表5中顯然可知蓄電體上形成有鍺薄膜之本發明電 極為負極之電池A7及電池A8,與使用鍺粉末為負極材制 之電池B2比較,表現非常優良之容量維持率。 (以電子顯微鏡觀察) _U9圖和第20圖係表示充放電前之狀態的電極a7 ‘紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公髮)— '— ----- 29 311933 --I I---I---I I --------訂--------I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 311933 五、發明說明(3〇 之剖面的掃描型電子顯微鏡照片(反射電子影像)。第19圖 之^ 口率為2000倍’而第2〇圖之倍率為1〇〇〇〇倍。 田 試料使用以樹脂包埋電極並行切片者。第1 9圖中,上 方端部及下方端部所觀察之層以及第20圖中上方端部所 觀察之層乃上述包埋樹脂層。 第19圖和第2〇圖中,明亮部分為銅箔和鍺薄膜,明 冗部分之表面薄層為鍺薄膜,其下面為銅箔。銅箔表面形 成有凹凸ϋ面所設置之錯薄膜之表面也形成有和鋼落 之凹凸相同之凹凸。因此,可推測鍺薄膜表面之凹凸乃係 受銅箔表面之凹凸之影響而形成。 /、 第20圖中,鋼箔左端谷部上之鍺薄膜領域可觀察到薄 、 又方向延伸之黑暗部分,該部分推測係錯薄膜中密 度較低領域,即低密度領域。 第21圖和第22圖係表示充放電前之電極28之剖面之 掃描型電子顯微鏡照片(反射電子影像”第2丨圖之倍率為 2000倍,而第22圖之倍率為100⑼倍。試料係和第19圖 乂及第20圖所不之電極a7同樣用樹脂包埋而成。 ,第21圖和第22圖中,明亮部分表示銅羯部分,銅羯 上稍為黑暗部分為形成鍺薄膜(厚度約為2“ m)之部分。電 極中’亦與電極a7同樣在鍺薄膜之表面上形成與㈣ 相同之凹凸。 第23圖和第24圖係表示第10循環後之電池A7所取 出電極a7之剖面之掃描型電子顯微鏡照片(反射電子影 像卜二^25圖和第26圖係表示第10循環後之電池As 本紙張尺度 (eNS)A4 — (2i〇7i77il ---------------------^ιρ*^——訂——— (請先閱讀背面之注意事項再填寫本頁) W5124 A7 五、發明說明(31 ) 所取出電極a8之剖面之掃描型電子顯 岑伤、 卞顯微鏡照片(反射電子 〜像)。任何試料皆以樹脂包埋電極, 穿丹做成切片而使用。 弟23圖和第25圖之倍率為500倍,筮_ 处方 第24圖和第26圖之 倍率為2500倍。 第23圖至第26圖中’鍺薄膜表面所觀察之白色部分 乃係包埋在樹脂之際,在鍺薄膜表面上所塗布之金。按照 _上述以金塗布之理由係防止鍺薄 ^ 1衝知反應以及使樹脂 和鍺薄膜之境界得以分明。 由第23圖至第26圖顯示,可知鍺薄臈亦盘矽薄膜一 樣,藉由充放電而在薄膜之厚度方向形成切縫藉該切縫使 薄膜分離成為柱狀。又,可知蓄電體之銅落和錯薄膜之間 其對比之差異不大,所以其境界不容易判別,但仔細觀察 時,還是可以看出蓄電體之凸部存在有柱狀之錯薄膜,錯 薄膜緊貼在蓄電體上。 錯薄膜和梦薄膜之情況不同,錯薄膜在橫方向也可觀 察到切縫,惟這種切縫係為觀察剖面為目的而研磨鍺薄膜 之際發生之可能性很大。 消 訂 另外,鍺薄膜之柱狀部分之間的切縫(空隙 矽薄膜大。此係充放電後之柱狀部分之高度約為以瓜,較 充放電前之膜厚之2/zm增高為3倍左右。因此,因充電 而吸存鋰後膨脹之薄膜,當放電而收縮之際,在橫方向, 亦即面方向之收縮為主’厚度方向之收縮率較小,所以可 能造成柱狀部分間之切縫(空隙)之寬度加大。 ι_第22圖和第28圖乃示充放電後之電極a7之鍺薄膜表 ΪΜ:張尺度適用中國國家標準(CNS)A4規格—x 297公爱) 31 311933 M5124 A7 L、發明說明(32 ) 面由上方觀察之掃描型電子顯微鏡照片(二次電子影像) 而第27圖之倍率為1000倍,第28圖之倍率為5 = 〇^’。 第29圖和第30表示充放電後之電極a7之鍺薄膜表面=稍 斜方向觀察之掃描型電子顯微鏡照片(二次電子影像)。第 29圖之倍率為1000倍,而第3〇圖之倍率為$⑽〇倍。 第31圖和第32圖表示充放電後之電極以之鍺薄臈表 面由上方觀察之掃描型電子顯微鏡照片(二次電子影像), 第31圖之倍率為1〇〇〇倍,而第32圖之倍率為5〇⑽倍, 第33圖和第34圖表示充放電後之電極以之鍺薄膜表面由 稍斜方向觀察之掃描型電子顯微鏡照片(二次電子影像), 第33圖之倍率為1000倍,而第34圖之倍率為5〇⑽倍。 如第27圖至第34圖所示,鍺薄膜之柱狀部分之周圍 形成有切刻(空隙),和鄰接之柱狀部分之間有空隙存在。 因此,和上述矽薄膜一樣充放電之際能緩和活性物質之膨 服收縮。 第35圖表示充放電前之電極a7之鍺薄膜表面由上方 觀察之掃描型電子顯微鏡照片(二次電子影像)。第36圖表 示充放電4之電極a8之鍺薄膜表面由上方觀察之掃描型 電子顯微鏡照片(二次電子影像)。第35圖和第36圖之倍 率皆為1000倍。 如第35圖和第36圖所示,鍺薄膜表面沿著基材之電 解銅箔之凹凸形成凹凸,鍺薄膜之谷部以網目狀連接。可 知沿著此谷部之厚度方向形成有切刻(空隙),而形成有鍺 薄膜之柱狀部分 本紙張尺度適用中國國家標準(CNS)A4規格⑵G χ 297公爱) η ----11933 --------_!螓·裝 (請先閱讀背面之注意事項再填寫本頁) n n ι ί > β ·ϋ ϋ ϋ -..... ϋ =0 # 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 515124 _ A7 五、發明說明(33 ) (藉SIMS分析深度方向之濃度分布) 第37圖表示組合電池之前,即充放電前之電極a7中 深度方向之構成元素之濃度分布,第38圖表示同樣為充放 電前之電極a8中,深度方向之構成元素之濃度分布。構成 元素之濃度分布可藉二次離子質量分析(SIMS),使用〇/ 濺射源,將銅元素(63Cu·)和鍺元素(73Ce_)之濃度,藉由自 薄膜表面往深度方向測定而進行。橫軸表示鍺薄膜表面起 之深度(//m),縱軸表示各種構成元素之強度(計數值 由第37圖和第38圖可明顯得知,在蓄電體附近,鍺 薄膜擴散有蓄電體成分之銅(Cu),而愈靠近鍺薄膜表面, 蓄電體成分之鋼(Cu)愈減少。 按照上述,鍺薄膜中擴散有蓄電體成分之銅元素,並 且畜電體附近’其鋼濃度高,愈靠近錯薄膜表面,銅漢度 愈減少之濃度梯度存在。因此,在蓄電體附近,跟鋰不反 應之銅濃度變高,跟鋰反應之鍺濃度變小。因此,蓄電體 附近吸存、釋放鋰較少,從而鍺薄膜之膨脹收縮也相對變 小。因此,蓄電體附近之鍺薄膜上所產生應力變小,在蓄 電體附近,不容易發生鍺薄膜自蓄電體剝離或脫離之切縫 (空隙),鍺薄膜之柱狀部分之底部得以跟蓄電體保持緊貼 狀態。 如上所述,分離成為柱狀之鍺薄膜,在充放電循環時, 和蓄電體能強固地緊貼一起,且藉柱狀部分之周圍形成之 空隙,能緩和伴隨充放電循環時之薄膜之膨脹收縮,所以 能獲得優異之充放電循環特性。 --------^---------^ (請先閱讀背面之注意事項再填寫本頁) 經 濟 部 智I 慧 財 產 局 員 工 消 費 合 作 社 印 製 本紙張尺度適用中國國家標準(CNS)A4規格(210 x297公爱) 33 311933 515124 A7 五、發明說明(34 ) f驗5 (電極a9之製造) 使用電解㈣(厚度為18㈣做為蓄電體之基板,藉 RF濺射法在上述電解銅箱上形成矽薄臈。濺射之條件J 下:濺射氣體(氫)流量:100sccm,基板溫度:室溫(不加 熱),反應壓力· (MPa (1·0χ 1〇-3 τ〇ΓΓ),高週波電力:2〇時。 矽薄膜其厚度堆積到約為2#m為止。 就所得之⑦薄膜進行拉曼光譜分析之結果,在48(χ 附近檢出有高峰,但在52Genrl附近未檢出有高峰存在。 由此可確定所得矽薄臈為非晶質矽薄膜。 訂 將上述形成有非晶質石夕薄膜之電解銅箱裁切成為2cm X 2cm之大小,製成電極。 所採用電解銅荡之表面粗較度Ra和局部山峰之 間隔S使用能針型表面形狀測定儀Dekut3sT * 技術社製)’設定測定距離為2 〇顏而行測定。得工 二糙度Ra為〇.188_,局部山峰之平均間隔夂2 經 濟 部 智 慧 財 產 局 員 工 消 費 合 社 印 製 (電al〇之製造) 使用上述電極⑽所採用相同之電解㈣做 =,㈣膜厚度改為約一之外,其他皆以盘上述 實驗1之電極al相同條件在電解㈣上形成 上述電極aM目同方法製成電極al〇。 、人- 就所得之石夕薄模進行拉曼光諸分析结果,* ! 一附近兩者都檢測出山峰之存在。因此,所 311933 34 515124 A7 五、發明說明(35 ) 獲得之石夕薄膜為微結晶碎薄膜。 (比較電極b3之製造) 使用上述實驗i所採用之軋製鋼箔做為蓄電體之基 板,以與電極a9之相同製造方法,藉RF錢射法 質矽薄膜(厚度約為2//m)。 成非曰曰 其次,就所得之非晶質矽薄膜,在65(rc下施與丨小 時之退火處理。退火處理後之石夕薄膜經拉曼光譜分析姓 果,附近之高峰消失,僅看到^…瓜^附近之高^。 因此,退火處理之結果確知形成了多結晶矽薄膜。 使用上述形成有多結晶矽薄膜之軋製鋼箔,按照上述 製造電極a9相同方法製得電極b3。 就軋製銅箔,按照上述相同方法測定表面粗糙度 牙局邛山峰之平均間隔s之結果,表面粗糙度〇 〇37 而局部山峰之平均間隔3為14#m。 (充放電特性之測定) 使用上述所得電極a9、電極ai〇和電極b3做為作用 電極製^得對極和參考極為金屬鐘之試驗用電池。電解 液使用上述實驗1所製成之相同電解液。另外,單極之試 驗用電池以作用電極之還原為充電,而氧化做為放電。 上述各種試驗用電池,在25艽下,以〇 5ιηΑ之定電流 充電到參考極為基準之電位到達〇V為止之後,再進行放 電到達2V為止。以上述做為充放電之一個循環,並測定 第1循環和第5循環之放電容量和充放電效率。將其結果 表不於表6中。 本紙1尺度適用中雨^票準(CNS)A4規格(21〇τ^^) 35 31 ^--------^---------線 (請先閱讀背面之注意事項再填寫本頁) M5124I I I Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Before depositing a germanium film on the electrolytic copper network of the substrate, irradiate argon plasma on the substrate for pretreatment. The degree of vacuum in the reaction chamber was adjusted to approximately 0.05 Pa (approximately 5 × 10 · 4 Tom), the hydrogen flow rate was 40 sccm, and the supplied microwave power was 200 W to irradiate the hydrogen plasma on the substrate. When hydrogen plasma is irradiated, a bias voltage of -100V is applied to the substrate. Pretreatment was performed by irradiating hydrogen plasma for 15 minutes. Next, a germanium thin film was deposited on the substrate by an electron beam gun at a deposition rate of 1 nm / second (10 A / second). The substrate temperature is room temperature (without heating). The obtained germanium thin film was analyzed by Raman spectroscopy. As a result, it was confirmed that the germanium thin film was an amorphous germanium thin film. (Manufacturing of electrode b2) This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 28 311933 515124 Printed by A7 of the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (¾) Use average grains "10" m2 germanium powder, mixed with 10 parts by weight of germanium powder, 10 parts by weight of acetylene black for conductive material, and 10 parts by weight of polytetrazine ethylene for adhesive. Prepared Chin-like electrode b2. (Manufacturing of the battery) A lithium secondary battery was prepared by using the above-mentioned electrodes 37, 38, and b2 as the negative electrode, and the others in the same manner as shown in Experiment .1. Use electrode a7 as negative electrode as battery A7 ′ Use electrode a8 as negative electrode as battery A8, and use electrode b2 as negative electrode as battery B2. (Evaluation of charge-discharge cycle characteristics). The above-mentioned various batteries were charged to a voltage of 4.2V at a current of G. 1 ma at 2 5 C, and then discharged to a charging voltage of 2 claws. Cycle, and measure the capacity retention rate at the 10th cycle. The measured results are shown in Table 5. Table 5 Capacity maintenance rate of battery 10th cycle A7 96% A8 93% B2 3 9% It is clear from Table 5 that battery A7 and battery A8 whose electrodes are negative electrodes of the present invention with a germanium film formed on the storage body, and using germanium Battery B2, which is made of powder as a negative electrode, shows very good capacity retention. (Observed with an electron microscope) _U9 and Figure 20 are electrodes a7 showing the state before charging and discharging. 'Paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297). —' — ----- 29 311933 --I I --- I --- II -------- Order -------- I (Please read the notes on the back before filling out this page) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative 311933 V. Description of the invention (scanning electron microscope photograph of the section 30 (reflected electron image). The mouth ratio of Figure 19 is 2000x 'and the magnification of Figure 20 is 1,000. The field sample uses a resin-embedded electrode for parallel slicing. In Fig. 19, the layers observed at the upper and lower ends and the layers observed at the upper end in Fig. 20 are the above-mentioned embedded resin layers. In Fig. 19 and Fig. 20, the bright part is a copper foil and a germanium thin film, and the surface thin layer of the clear and redundant part is a germanium thin film, and the lower part is a copper foil. The surface has the same unevenness as that of the steel drop. Therefore, it can be presumed that the unevenness on the surface of the germanium film is affected by the surface of the copper foil. It is formed by the influence of the unevenness. / In Figure 20, a thin, dark portion extending in the direction of the germanium film on the valley at the left end of the steel foil can be observed. Fig. 21 and Fig. 22 are scanning electron microscope photographs (reflected electron images) of the cross section of the electrode 28 before the charge and discharge (reflected electron image). The magnification of the second image is 2000 times, and the magnification of the 22nd image is 100 times. The sample is embedded with resin similarly to the electrode a7 shown in Fig. 19 and Fig. 20. In Figs. 21 and 22, the bright part indicates the copper hafnium part, and the slightly dark part on the copper hafnium forms germanium. The thin film (thickness of about 2 "m). In the electrode, the same unevenness as that of electrode a7 is formed on the surface of the germanium film. Figures 23 and 24 show the battery A7 after the 10th cycle. Scanning electron microscope photograph of the cross-section of the electrode a7 taken out (reflected electron image B2 ^ 25 and Figure 26 show the battery after the 10th cycle As As paper size (eNS) A4 — (2i〇7i77il ----- ---------------- ^ ιρ * ^ —— Order ——— (please first Read the notes on the back and fill in this page again.) W5124 A7 V. Description of the invention (31) Scanning electron micrograph and photomicrograph (reflected electron ~ image) of the cross section of the electrode a8 taken out. Any sample is embedded in resin. The electrode is perforated and used in slices. The magnifications of the 23rd and 25th images are 500 times, and the magnifications of the 24th and 26th prescriptions are 2500 times. The germanium films in FIGS. 23 to 26 The white part observed on the surface is the gold coated on the surface of the germanium film when it is embedded in the resin. In accordance with the above reasons for coating with gold, the reason is to prevent the thin germanium ^ 1 reaction and to make the boundary between resin and germanium thin film clear. As shown in Figs. 23 to 26, it can be seen that the germanium thin film is the same as the silicon thin film, and a slit is formed in the thickness direction of the film by charging and discharging, and the film is separated into a columnar shape by the slit. In addition, it can be seen that the difference between the copper drop and the thin film of the electricity storage body is not very different, so it is not easy to discern the realm. The film is closely attached to the electricity storage body. In the case of the wrong film and the dream film, a slit can be observed in the transverse direction. However, this slit is likely to occur when the germanium film is polished for the purpose of observing the cross section. In addition, the gap between the columnar parts of the germanium film (the gap silicon film is large. The height of the columnar part after charging and discharging is about melons, which is 2 / zm higher than the film thickness before charging and discharging. About 3 times. Therefore, when the lithium film that swells after absorbing lithium due to charging is shrunk due to discharge, the shrinkage in the horizontal direction, that is, the planar direction is the main one. The shrinkage in the thickness direction is small, so it may cause columnar shape. The width of the slit (gap) between the sections is increased. Figures 22 and 28 show the germanium thin film of the electrode a7 after charging and discharging. ΪM: The scale is applicable to the Chinese National Standard (CNS) A4 specification-x 297. (Public love) 31 311933 M5124 A7 L. Description of the invention: Scanning electron microscope photograph (secondary electron image) of the (32) plane viewed from above. The magnification of Figure 27 is 1000 times, and the magnification of Figure 28 is 5 = 〇 ^ '. Figures 29 and 30 show scanning electron microscope photographs (secondary electron images) of the surface of the germanium thin film of the electrode a7 after charging and discharging. The magnification of FIG. 29 is 1000 times, and the magnification of FIG. 30 is $ 100. Figures 31 and 32 show scanning electron microscope photographs (secondary electron images) of the surface of the thin germanium electrode on the electrode after charging and discharging (secondary electron image). The magnification of Figure 31 is 1000 times, and Figure 32 The magnification of the figure is 50 ×. Figures 33 and 34 show the scanning electron microscope photograph (secondary electron image) of the surface of the germanium film on the electrode after charging and discharging from a slightly oblique direction, and the magnification of figure 33. It is 1000 times, and the magnification of FIG. 34 is 50 times. As shown in FIGS. 27 to 34, cuts (voids) are formed around the columnar portions of the germanium film, and there are gaps between the adjacent columnar portions. Therefore, it is possible to reduce the swelling and shrinkage of the active material during charging and discharging like the above-mentioned silicon film. Fig. 35 shows a scanning electron microscope photograph (secondary electron image) of the surface of the germanium thin film of the electrode a7 before charging and discharging as viewed from above. Fig. 36 shows a scanning electron microscope photograph (secondary electron image) of the surface of the germanium film of the electrode a8 of the charge / discharge 4 as viewed from above. The magnifications in Figure 35 and Figure 36 are both 1000 times. As shown in Fig. 35 and Fig. 36, the surface of the germanium thin film is uneven along the unevenness of the electrolytic copper foil of the substrate, and the valley portions of the germanium thin film are connected in a mesh shape. It can be seen that cuts (voids) are formed along the thickness direction of this valley, and columnar parts with germanium film are formed. The paper size is applicable to Chinese National Standard (CNS) A4 specification ⑵G χ 297 public love) η -11933 --------_! 螓 · Installation (please read the precautions on the back before filling this page) nn ι > β · ϋ ϋ ϋ -..... ϋ = 0 # Ministry of Economic Affairs Intellectual Property Printed by the Bureau ’s Consumer Cooperative 515124 _ A7 V. Description of the invention (33) (Depth concentration analysis by SIMS) Figure 37 shows the concentration distribution of the constituent elements in the depth direction of electrode a7 before the assembled battery, that is, before charging and discharging. FIG. 38 shows the concentration distribution of the constituent elements in the depth direction in the electrode a8, which is also before charging and discharging. The concentration distribution of constituent elements can be determined by secondary ion mass analysis (SIMS) using a 0 / sputtering source to measure the concentration of copper (63Cu ·) and germanium (73Ce_) from the surface of the film in the depth direction. . The horizontal axis represents the depth (// m) from the surface of the germanium film, and the vertical axis represents the strength of various constituent elements (count values can be clearly seen from Figure 37 and Figure 38. In the vicinity of the electricity storage body, the germanium film diffuses the electricity storage body The copper (Cu) of the composition is closer to the surface of the germanium film, and the steel (Cu) of the electricity storage component is reduced. According to the above, the copper element of the electricity storage component is diffused in the germanium film, and the steel concentration near the animal body is high. The closer it is to the surface of the wrong film, the less the copper gradient exists. Therefore, in the vicinity of the electricity storage body, the concentration of copper that does not react with lithium becomes higher, and the concentration of germanium that reacts with lithium becomes smaller. Therefore, storage near the electricity storage body Less lithium is released, so the expansion and contraction of the germanium film is relatively small. Therefore, the stress generated on the germanium film near the electricity storage body becomes smaller, and it is not easy for the germanium film to peel off or detach from the electricity storage body near the electricity storage body. The gap (gap) allows the bottom of the columnar portion of the germanium film to closely adhere to the electricity storage body. As described above, the germanium film separated into a columnar shape can firmly adhere to the electricity storage body during the charge and discharge cycle. It can reduce the expansion and contraction of the film during the charge-discharge cycle by the gap formed around the columnar part, so it can obtain excellent charge-discharge cycle characteristics. -------- ^ ----- ---- ^ (Please read the notes on the back before filling out this page) Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Employee Consumer Cooperatives This paper is sized for China National Standard (CNS) A4 (210 x297 public love) 33 311933 515124 A7 V. Description of the invention (34) f Examination 5 (manufacturing of electrode a9) Using electrolytic plutonium (thickness 18 p.m.) as the substrate of the electricity storage body, a thin silicon plutonium was formed on the above electrolytic copper box by RF sputtering method. Under the conditions J: Sputter gas (hydrogen) flow rate: 100 sccm, substrate temperature: room temperature (without heating), reaction pressure (MPa (1.0 × 1〇-3 τ〇ΓΓ), high cycle power: 20 hours The thickness of the silicon film was stacked to about 2 # m. As a result of Raman spectroscopy analysis of the obtained erbium film, a peak was detected near 48 (χ), but a peak was not detected near 52 Genrl. It can be confirmed that the obtained silicon thin film is an amorphous silicon thin film. The electrolytic copper box formed with an amorphous stone film is cut into a size of 2cm X 2cm to make an electrode. The surface roughness Ra of the electrolytic copper plate used and the interval S between the local peaks use a pin-type surface shape tester. Dekut3sT * made by the Technical Co., Ltd.) 'Set the measurement distance to 2 〇 Yan and measure. The roughness Ra of the successful second is 0.188_, the average interval between local peaks 夂 2 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (Manufacture of 〇) Using the same electrode used in the above electrode, the thickness of the film was changed to about one, and the others were formed on the electrode with the same conditions as those in Experiment 1 above. The electrode alo was made. , 人-The results of Raman light analysis on the obtained Shi Xi thin mold, *! The presence of both peaks was detected in the vicinity of both. Therefore, the 311933 34 515124 A7 V. Description of the Invention (35) The Shi Xi film obtained is a microcrystalline shredded film. (Manufacture of comparative electrode b3) Using the rolled steel foil used in the above experiment i as the substrate of the electricity storage body, using the same manufacturing method as the electrode a9, a silicon film (thickness of about 2 // m) was shot by RF method. . Cheng Fei said that the amorphous silicon film obtained was annealed at 65 ° C for 1 hour. The annealed Shi Xi film was analyzed by Raman spectroscopy, and the nearby peak disappeared. It is close to ^ ... melon ^. Therefore, the result of the annealing process confirms that a polycrystalline silicon film is formed. Using the above-mentioned rolled steel foil with the polycrystalline silicon film formed, the electrode b3 was prepared in the same manner as the electrode a9 described above. As a result of rolling copper foil, the surface roughness was measured according to the same method as above, and the average interval s of the mountain peaks was measured. The surface roughness was 037 and the average interval 3 of the local peaks was 14 # m. (Measurement of charge and discharge characteristics) Use The electrode a9, the electrode ai0, and the electrode b3 obtained above were used as working electrodes to prepare a test battery for a counter electrode and a reference electrode metal clock. The electrolyte used was the same electrolyte prepared in the above experiment 1. In addition, a monopolar test The battery is charged by reduction of the working electrode, and oxidized as discharge. The above-mentioned various test batteries are charged at a constant current of 0,5 μA to a reference potential at 25 ° A. After V is reached, discharge is performed until it reaches 2 V. Using the above as one cycle of charge and discharge, the discharge capacity and charge and discharge efficiency of the first and fifth cycles are measured. The results are shown in Table 6. This paper 1 Standards are applicable to Zhongyu ^ Ticket Standard (CNS) A4 specification (21〇τ ^^) 35 31 ^ -------- ^ --------- line (please read the precautions on the back first) (Fill in this page) M5124

充放電特性Charge and discharge characteristics

矽薄膜之厚度Silicon film thickness

退火處理 循環Annealing cycle

由表6中之結果顯示本發明 一 極活性物質之電極a9和以微社 曰曰質矽薄膜做為 之雷朽a 1 η ^ 、〇日日夕薄膜為電極活性物巧 之電極alO,較之以多結晶矽 庄物1 用電極b3,表現高放電容量 之比; 的充放電效率。 -弟5循裱後也表現良ΤΜΛ <實施例1至7和比較例1至2> [蓄電體之製造] 使用表7中所示試料1至4做為蓄電體之基板。試; 1乃係使用電㈣中做為蓄電體之同㈣軋製鋼。試彡 2至4係將軋製銅箔之表面分別用剛玉砂紙之#1〇〇、“〇〇 #1000研磨,使其粗糙化之後,用純水洗淨並乾燥者。 本紙張尺度適用中國國家標準(CNS)A4規格⑵G x 297公髮The results in Table 6 show that the electrode a9, which is a polar active material of the present invention, and the thin film a 1 η ^, which is made of a thin silicon film made by Weishe, and the electrode alO, which is an electrode active material, are compared. The electrode b3 for polycrystalline silicon substrate 1 exhibits a high discharge capacity ratio; and a charge-discharge efficiency. -Brother 5 also exhibited good TMA after mounting. ≪ Examples 1 to 7 and Comparative Examples 1 to 2 > [Manufacture of power storage body] Samples 1 to 4 shown in Table 7 were used as the substrate of the power storage body. Trial; 1 is the same rolled steel using electricity as the electricity storage body. Tests 2 to 4 are those in which the surface of the rolled copper foil is ground with # 1〇00 and "〇〇 # 1000" of corundum sandpaper, and then roughened, and then washed with pure water and dried. This paper standard applies to China National Standard (CNS) A4 size ⑵G x 297

311933 A7 B7 、發明說明( 表7 試料號碼 (請先閱讀背面之注意事項再填寫本頁) __ 粗糙度Ra(# m) 使用上述銅箔做為基板,依據表8至表ι〇中所示條 1,、藉RF «裝置,在基板上堆㈣薄膜。比較例2乃 形成薄膜後,再行熱處理(退火處理)。另外,實施例i至7 和比車乂例1係在薄膜形成前對基板施與前處理。上述前處 糸乂另仃5又置之等離子源,使之發生ecr氬等離子,以 L皮電力200W,氬氣分壓為〇 〇6Pa下照射基板1〇分鐘而 完成。 -就石夕薄膜進行拉曼光譜分析而決定其結晶性,其結果 不於表8至表1〇中。 (充放電特性之測定) 鲁 將形成在實施例1 $ 7 i u 、 、 至7和比較例1至2之銅箔上的矽 薄膜裁切成2cmx 2cm大小,以兪L ^ 以與上述實驗5相同方法製 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 仔试驗用電池。就各個試 錢用電池,與上述實驗5所示同 樣方法進行充放電試驗 ^ ^弟1循環、第5循環,以及 第20循裱之放電容量 至表1〇中。 和充放電效率。將其結果表示於表8 本紙張尺度朋中關家辟(cns)A4規格 x 297公釐) 37 311933 515124 A7B7 五、發明說明〇8 ) 表8 經濟部智慧財產局員工消費合作社印製 實施例1 實施例2 實施例3 實施例4 基 板 基板種類 試料2 試料3 試料4 試料3 表面粗糙度Ra 0.1 0.18 1 0.18 基板厚度 IS β m 1S β m IS β m 18 // m 薄 膜 形 成 條 件 矽薄膜厚度 2 β m 2 β m 2 β m 2 β m 薄膜形成方法 濺射法 濺射法 濺射法 濺射法 藏射氣體 氬 氬 氬 氬 氬氣流量 lOOsccm lOOsccm lOOsccm lOOsccm 目的物 99.999% 矽單結晶 99.999% 矽單結晶 99.999% 砍早結晶 99.999% 矽單結晶 濺射環境 O.lOPa O.lOPa O.lOPa O.lOPa 濺射電力 200W 200W 200W 200W 基板溫度 20°C 20°C 20°C 20°C 前處理 有 有 有 有 濺射時間 2小時 2小時 2小時 2小時 孰 Ml 理 條 件 熱處理 無 無 無 益 熱處理時間 — — — — 結 曰曰 性 決 定 拉曼光譜480CHT1 有 有 有 有 拉曼光譜520^1^1 無 無 無 無 結晶性 非晶質 非晶質 非晶質 非晶質 第 1 循 環 放電容量(mAh/g) 3980 3978 3975 3980 充放電效率(%) 100 100 100 100 第 5 循 環 放電容量(mAh/g) 3990 3981 3980 3990 充放電效率(%) 100 100 100 100 第 20 循 環 放電容量(mAh/g) 3990 3980 3981 3990 充放電效率(%) 100 100 100 100 --------—AWI ^--------1--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 38 311933 515124 A7 B7 五、發明說明(39 ) 經濟部智慧財產局員工消費合作社印製 表 實施例5 實施例6 實施例7 基 板 基板種類 試料3 試料3 試料3 表面粗較度Ra 0.18 0.18 0.18 基板厚度 IS β m 18 β m 18 ju m 薄 膜 形 成 條 件 矽薄膜厚度 2 β m 2 // m 2 // m 薄膜形成方法 濺射法 濺射法 濺射法 濺射氣體 氬氣 氬氣 氬氣 氬氣流量 lOOsccm lOOsccm lOOsccm 目的物 99.999% 砍早結晶 99.999% 石夕單結晶 99.999% 矽單結晶 濺射環境 O.lOPa l.OPa 10Pa 濺射電力 200W 200W 200W 基板溫度 50°C 20°C 20°C 前處理 有 有 有 濺射時間 2小時 1.5小時 2.5小時 熱 處 理 條 件 熱處理 無 無 無 熱處理時間 — — — 結 B曰 性 決 定 拉曼光譜480cm_1 有 有 有 拉曼光譜520011^1 無 無 無 結晶性 非晶質 非晶質 非晶質 第 1 循 環 放電容量(mAh/g) 4060 3585 2500 充放電效率(%) 100 100 100 第 5 循 環 放電容量(mAh/g) 4060 3592 2505 充放電效率(%) 100 100 100 第 20 循 環 放電容量(mAh/g) 4060 3590 2505 充放電效率(%) 100 100 100 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 39 311933 --------------裝--- (請先閱讀背面之注意事項再填寫本頁) --線· 515124 A7B7 五,、發明說明(4〇 ) 表10 經濟部智慧財產局員工消費合作社印製 比較例1 比較例2 基 板 基板種類 試料3 試料1 表面粗糙度Ra 0.18 0.037 基板厚度 18/z m 18 // m 薄 膜 形 成 條 件 矽薄膜厚度 2 β m 2 β m 薄膜形成方法 濺:射法 濺射法 濺射氣體 氬氣 氬氣 氬氣流量 lOOsccm lOOsccm 目的物 99.999% 矽單結晶 99.999% 矽單結晶 濺射環境 O.lOPa O.lOPa 濺射電力 200W 200W 基板溫度 450〇C 20°C 前處理 有 無 濺射時間 2小時 2小時 熱 處 理 條 件 熱處理 無 650〇C 熱處理時間 — 1小時 結 aa 性 決 定 拉曼光譜480CHT1 無 無 拉曼光譜520cm-1 有 有 結晶性 多結晶 多結晶 第 1 循 環 放電容量(mAh/g) 1250 1978 充放電效率(%) 81 83 第 5 循 環 放電容量(mAh/g) 900 731 充放電效率(%) 75 75 第 20 循 環 放電容量(mAh/g) 700 350 充放電效率(%) 69 59 (請先閱讀背面之注意事項再填寫本頁) ▼-裝 訂---------^0, 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 40 311933 經濟部智慧財產局員工消費合作社印製 A7 -~~--^ I、發明說明(41 ) 一由表8至表1 〇中之結果清楚可知,本發明之非晶質石夕 缚膜為電極活性物質之實施例1至7,較之以多結晶矽薄 膜為電極活性物質之比較例i至2,可獲得高放電容量, 同時可得良好的充放電循環特性。 A驗7 電解銅箔(厚度為18#m,表面粗糙度Ra=〇188//m, 平均間隔S=6/zm)上面,藉RF濺射法形成非晶質矽薄膜 (厚度約為3# m)而製得電極all。又,薄膜形成條件如下。 目的物:單結晶矽,濺射氣體(氬)流量=1〇〇%()111,基板溫 度:室溫(未加熱),反應壓力:0 1Pa,高週波電力·· 2〇〇w。 就所得矽薄膜進行拉曼光譜分析之結果,可看到 4 80cm 1附近之高峰,但未看到520cm-1附近之高峰。因此, 確定該矽薄膜為非晶質矽薄膜。 使用所得之電極all,按照與上述實驗1所示相同方 法製得之電池All,並按照上述實驗丨相同充放電循環條 件進行充放電循環試驗,求得第3 0循環之容量維持率。其 結果示於表11。又,表11中也將電池A1及電池A3之結 果合併表示之。 表11 電池 第30循環之容量維持率 A1 91% A3 97〇/〇 ~~~ All 97% 由表11所示之結果可清楚得知藉濺射法形成之非晶 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 311933 Μ--------1---------線 (請先閱讀背面之注意事項再填寫本頁) 515124 A7 —_B7 五、發明說明〇2 質石夕薄膜為活性物質之電池A11。也和使用微結晶矽薄膜 為活性物質之電池·Α1以及電池A3同樣顯示良好的容量維 持率。 藉電子顥微鏡觀察電極all之矽薄膜之狀態。首先, 用掃描型電子顯微鏡觀察充放電前狀態的電極ail之剖 面。第39圖和第40圖分別表示充放電前之電極all之剖 面的掃描型電子顯微鏡照片(二次電子影像)。第39圖之倍 率為2000倍,而第4〇圖之倍率為10000倍。又,試料係 跟第2圖和第3圖中之試料同樣用樹脂包埋電極,再行切 片做為試料。 訂 第39圖和第40圖中,稍明亮部分乃表示電解銅箔部 分,銅箔上稍黑暗部分示矽薄膜(厚度約為3// m)。如第外 圖和40圖所示電解銅箔表面形成有凹凸,凸部係具備錐體 狀之形狀。上面所設置之矽薄膜表面也跟鋼箔之凹凸同樣 形成有凹凸,凸部亦具有錐體狀之形狀。因此,矽薄膜表 面之凹凸係由銅箔表面之凹凸所形成者。 苐41圖表示電極all之矽薄膜表面之掃描型電子顯微 鏡照片(二次電子影像),其倍率為1000倍。如第41圖所 不,矽薄膜之表面形成有多數之凸部。該凸部如第39圖和 第40圖所示係相對應於銅箔表面之凸部而形成者。 第42圖表示上述充放電試驗第3〇循環後之電池A。 中取出的電極all之石夕薄膜表面之掃描型電子顯微鏡照月 (二次電子影像)。第42圖所示照片之倍率為1〇⑽倍。 如第42圖所示,矽薄膜在其厚度方向形成有切縫(空 ^纸張尺度適用中國國家標準(CNS)A4規格(_2W X 297公爱)_ 42 311933 d丄J丄厶Η Α7 Β7 五、發明說明(43 ) 隙)’藉該切縫(空隙)使石夕薄膜分離成為柱狀。帛6圖至第 9,圖所示石夕薄膜’其柱狀部分含有薄膜表面之一個凸部而 形成切縫,相對之下,第42圖所示梦薄膜,其柱狀部分含 有薄膜表面之複數個凸部而形成切縫。另外,切縫(空隙) 之寬度’也可以看出第42圖較第6圖至第9圖所示之石夕薄 膜為大。 ^ 電池A11和電池Α3 -樣備有良好的容量維持率。因 此如第42圖所不,即使在含有薄膜表面複數個凸部而形 成柱狀部分時,由於柱狀部分之周圍所形成之空隙,可以 緩和活性物質之膨脹收縮,所以活性物質不會從蓄電體剝 離’而能重複充放電循環。 訂 一以實驗1令製造電極al相同之薄膜形成條件,在軋製 銅治和電解銅fl(厚度為18"m)上分別形成膜厚約為2“瓜 •之微結晶碎薄膜。其次,將所得試料沖切製成直徑17匪 大小’其中在軋製銅箱上形成者做為電極el,在電解銅箱 上形成者做為電極e3。將跟電#el及電極e3相同者,按 照實驗1中之電極a2同樣方法以彻。C進行3小時之熱處 理’分別做為電極C2及電極c4。 "使用上述之電極cl至c4為負極之外,其他皆按照上 述實驗1所示相同方法製成鋰二次電池,分別為電池 “4。就上述電池以實驗】同樣之方法測定其充放電循環 哥命特性。另外,也按照實驗i同樣方法測定各電極之石夕 ’薄膜含1量、拉曼光譜分析中之高峰強度比率(48〇cm· 本紙張尺度適用中國國家標準(CNS)A4規格⑵〇 χ 297公爱) 43 311933 515124 A7 B7 五、發明說明(44 ) 752001111)以及結晶粒徑,其結果示於表12311933 A7 B7, invention description (Table 7 Sample number (please read the precautions on the back before filling this page) __ Roughness Ra (# m) Use the above copper foil as the substrate, according to Table 8 to Table ι〇 Article 1. The film is deposited on the substrate by the RF «device. In Comparative Example 2, after the film is formed, heat treatment (annealing) is performed. In addition, Examples i to 7 and Comparative Example 1 are before the film formation. Pretreatment is applied to the substrate. The above-mentioned front part is further placed into a plasma source to generate ecr argon plasma, which is irradiated to the substrate for 10 minutes at an L skin power of 200W and an argon partial pressure of 0,06Pa. -Determine the crystallinity of the Shixi film by Raman spectroscopy. The results are not shown in Table 8 to Table 10. (Measurement of charge and discharge characteristics) Lu Jiang will be formed in Example 1 $ 7 iu,, to 7 The silicon film on the copper foil of Comparative Examples 1 to 2 was cut into a size of 2 cm x 2 cm, and 兪 L ^ was used in the same manner as in Experiment 5 above to produce a test battery printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The battery for test money is the same as that shown in Experiment 5 above. Charge and discharge tests were performed ^ ^ 1 cycle, 5th cycle, and 20th cycle of the discharge capacity to Table 10 and charge and discharge efficiency. The results are shown in Table 8 this paper scale Peng Zhongguan Jiapi (cns ) A4 size x 297 mm) 37 311933 515124 A7B7 V. Description of invention 0 8) Table 8 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Example 1 Example 2 Example 3 Example 4 Substrate substrate type sample 2 Sample 3 Sample 4 Sample 3 Surface roughness Ra 0.1 0.18 1 0.18 Substrate thickness IS β m 1S β m IS β m 18 // m Film formation conditions Silicon film thickness 2 β m 2 β m 2 β m 2 β m Thin film formation method Sputtering Sputtering method sputtering method sputtering method argon argon argon argon argon flow lOOsccm lOOsccm lOOsccm lOOsccm target object 99.999% silicon single crystal 99.999% silicon single crystal 99.999% early crystal 99.999% silicon single crystal sputtering environment O. lOPa O.lOPa O.lOPa O.lOPa Sputtering power 200W 200W 200W 200W Substrate temperature 20 ° C 20 ° C 20 ° C 20 ° C Pre-treatment with or without sputtering time 2 hours 2 hours 2 hours 2 hours 孰 Ml Rule Heat treatment without heat treatment heat treatment time — — — — The conclusion is that the Raman spectrum 480CHT1 is determined by the existence of the Raman spectrum 520 ^ 1 ^ 1 No No No No Crystalline Amorphous Amorphous Amorphous Amorphous Amorphous Amorphous 1 Cycle discharge capacity (mAh / g) 3980 3978 3975 3980 Charge and discharge efficiency (%) 100 100 100 100 5th cycle discharge capacity (mAh / g) 3990 3981 3980 3990 Charge and discharge efficiency (%) 100 100 100 100 20th cycle Discharge capacity (mAh / g) 3990 3980 3981 3990 Charge and discharge efficiency (%) 100 100 100 100 ---------- AWI ^ -------- 1 --------- (Please read the precautions on the back before filling this page) This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 38 311933 515124 A7 B7 V. Description of Invention (39) Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by a consumer cooperative Example 5 Example 6 Example 7 Substrate substrate type sample 3 sample 3 sample 3 surface roughness Ra 0.18 0.18 0.18 substrate thickness IS β m 18 β m 18 ju m film formation conditions silicon film thickness 2 β m 2 // m 2 // m film formation Sputtering method sputtering method sputtering method sputtering gas argon argon argon argon argon flow rate 100 sccm lOOsccm lOOsccm object 99.999% cut early crystal 99.999% Shi Xi single crystal 99.999% silicon single crystal sputtering environment O.lOPa l .OPa 10Pa Sputtering power 200W 200W 200W Substrate temperature 50 ° C 20 ° C 20 ° C Pre-treatment with or without sputtering time 2 hours 1.5 hours 2.5 hours Heat treatment conditions Heat treatment No heat treatment time — — — Conclusion Raman spectrum 480cm_1 With or without Raman spectrum 520011 ^ 1 No No Non-crystalline Amorphous Amorphous Amorphous Amorphous No. 1 Cycle discharge capacity (mAh / g) 4060 3585 2500 Charge and discharge efficiency (%) 100 100 100 No. 5 Cyclic discharge capacity (mAh / g) 4060 3592 2505 Charge-discharge efficiency (%) 100 100 100 20th Cyclic discharge capacity (mAh / g) 4060 3590 2505 Charge-discharge efficiency (%) 100 100 100 (CNS) A4 specification (210 X 297 mm) 39 311933 -------------- install --- (please read the precautions on the back before filling this page)-line · 515124 A7B7 Five, hair Description (4〇) Table 10 Comparative Example 1 Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economy Comparative Example 2 Substrate Substrate Type Sample 3 Sample 1 Surface Roughness Ra 0.18 0.037 Substrate Thickness 18 / zm 18 // m Thin Film Formation Conditions Silicon Film thickness 2 β m 2 β m Thin film formation method Sputtering: sputtering sputtering method argon argon argon argon flow rate 100 sccm lOOsccm target 99.999% silicon single crystal 99.999% silicon single crystal sputtering environment 0.1 OPa O. lOPa Sputtering power 200W 200W Substrate temperature 450 ° C 20 ° C Pre-treatment with or without sputtering time 2 hours 2 hours Heat treatment conditions Heat treatment without 650 ° C Heat treatment time — 1 hour The aa property determines the Raman spectrum 480CHT1 No Raman spectrum 520cm -1 polycrystalline with polycrystalline polycrystalline 1st cycle discharge capacity (mAh / g) 1250 1978 charge and discharge efficiency (%) 81 83 5th cycle discharge capacity (mAh / g) 900 731 charge and discharge efficiency (%) 75 75 20th cycle discharge capacity (mAh / g) 700 350 charge and discharge efficiency (%) 69 59 (Please read the precautions on the back before filling this page) ▼ -pack --------- ^ 0, This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 40 311933 Printed by A7, Consumer Cooperatives, Bureau of Intellectual Property, Ministry of Economic Affairs-~~-^ I. Explanation of the invention (41)-From the results in Table 8 to Table 10, it is clear that the amorphous stone film of the present invention is the electrode active material of Examples 1 to 7, compared with the polycrystalline silicon film as In Comparative Examples i to 2 of the electrode active material, a high discharge capacity was obtained, and at the same time, good charge-discharge cycle characteristics were obtained. A test 7 On the surface of electrolytic copper foil (thickness 18 # m, surface roughness Ra = 〇188 // m, average interval S = 6 / zm), an amorphous silicon thin film (thickness of about 3 is formed by RF sputtering method) # m) , 而 制造 电子 all。 All electrodes were prepared. The film formation conditions are as follows. Object: single crystalline silicon, sputtering gas (argon) flow rate = 100% (111), substrate temperature: room temperature (unheated), reaction pressure: 0.1 Pa, high cycle power · 200w. As a result of Raman spectroscopy analysis of the obtained silicon thin film, a peak near 4 80 cm 1 was seen, but a peak near 520 cm-1 was not seen. Therefore, it is determined that the silicon thin film is an amorphous silicon thin film. Using the obtained electrode all, a battery All prepared according to the same method as shown in Experiment 1 above, and subjected to a charge-discharge cycle test under the same charge-discharge cycle conditions as described in Experiment 丨 above, to obtain the capacity retention rate at the 30th cycle. The results are shown in Table 11. The results of battery A1 and battery A3 are also shown in Table 11. Table 11 Capacity maintenance rate of battery 30th cycle A1 91% A3 97〇 / 〇 ~~~ All 97% From the results shown in Table 11, it can be clearly known that the size of the amorphous paper formed by the sputtering method is applicable to Chinese national standards (CNS) A4 specification (210 X 297 mm) 311933 Μ -------- 1 --------- line (Please read the precautions on the back before filling this page) 515124 A7 —_B7 V. Description of the Invention 〇 Quality Shi Xi thin film is active battery A11. The battery A1 and battery A3 using a microcrystalline silicon film as an active material also exhibited good capacity retention. The state of the silicon thin film of the electrode all was observed by an electron microscope. First, a cross section of the electrode ail in a state before charging and discharging was observed with a scanning electron microscope. Figures 39 and 40 show scanning electron micrographs (secondary electron images) of the cross section of the electrode all before charging and discharging, respectively. The magnification of FIG. 39 is 2000 times, and the magnification of FIG. 40 is 10,000 times. The samples were embedded with resin in the same manner as the samples in Figs. 2 and 3, and then cut into samples. In Fig. 39 and Fig. 40, the lighter part indicates the electrolytic copper foil, and the darker part on the copper foil shows the silicon film (thickness about 3 // m). The surface of the electrolytic copper foil is formed with irregularities as shown in Figs. 40 and 40, and the convex portions have a tapered shape. The surface of the silicon film provided above is also formed with unevenness similar to that of the steel foil, and the convex portion also has a cone-like shape. Therefore, the unevenness on the surface of the silicon thin film is formed by the unevenness on the surface of the copper foil. Figure 41 shows a scanning electron micrograph (secondary electron image) of the silicon thin film surface of the electrode all, with a magnification of 1000 times. As shown in Fig. 41, a large number of convex portions are formed on the surface of the silicon thin film. The protrusions are formed corresponding to the protrusions on the surface of the copper foil as shown in Figs. 39 and 40. Fig. 42 shows the battery A after the 30th cycle of the charge-discharge test. Scanning electron microscope (secondary electron image) of the surface of the Shi Xi film taken out of the electrode all. The magnification of the photograph shown in FIG. 42 is 10 ×. As shown in Figure 42, a slit is formed in the thickness direction of the silicon film (the empty ^ paper size is subject to the Chinese National Standard (CNS) A4 specification (_2W X 297 public love) _ 42 311933 d 丄 J 丄 厶 Η Α7 Β7 V. Explanation of the Invention (43) Gap) 'By using this slit (gap), the Shi Xi film is separated into a columnar shape.图 Figures 6 to 9, the columnar part of the Shi Xi film shown in the figure contains a convex portion on the film surface to form a slit. In contrast, the dream film shown in Figure 42 has the columnar part of the film surface. A plurality of convex portions form a slit. In addition, it can be seen that the width of the slit (gap) is larger than that of the Shixi film shown in FIGS. 6 to 9. ^ Battery A11 and Battery A3-samples have good capacity retention rates. Therefore, as shown in FIG. 42, even when the columnar portion is formed by including a plurality of convex portions on the surface of the film, the expansion and contraction of the active material can be eased by the voids formed around the columnar portion, so the active material will not be removed from the electricity storage. The body is peeled off and the charge-discharge cycle can be repeated. Set up the same thin film formation conditions for making the electrode a1 in Experiment 1, and form a microcrystalline shredded film with a thickness of about 2 "melons on rolled copper and electrolytic copper fl (thickness 18 " m). Second, The obtained sample was punched into a diameter of 17 bands. The electrode formed on the rolled copper box was used as the electrode el, and the electrode formed on the electrolytic copper box was used as the electrode e3. The electrode a2 in Experiment 1 was completed in the same way. The heat treatment of C for 3 hours was used as the electrode C2 and the electrode c4. &Quot; Using the above electrodes cl to c4 as the negative electrode, the rest were the same as shown in the above experiment 1 Methods Lithium secondary batteries were made, which were batteries "4. For the above batteries, the charge-discharge cycle life characteristics were measured in the same manner as in the experiment. In addition, the Shi Xi 'film content of each electrode and the peak intensity ratio in Raman spectroscopy analysis were also measured in the same way as in Experiment i (48 ° cm. This paper is in accordance with the Chinese National Standard (CNS) A4 specification ⑵χχ297). (Public love) 43 311933 515124 A7 B7 V. Description of the invention (44) 752001111) and crystal grain size. The results are shown in Table 12.

(請先閱讀背面之注意事項再填寫本頁) 由表12所示結果可清楚得知,即使在微結晶矽薄膜之 膜厚為約2/zm之電池C1至C4中,亦可獲得相者古 量維持持率。 田谷 其次,將形成微結晶矽薄臈於軋製銅箔上之電極。工 按照厚度方向做成切片,以做為顯微鏡觀察用試料,再以 穿透型電子顯微鏡觀察之。 第43圖和第44圖表示電極〇1上銅箔和矽薄膜之界面 附近之穿透型電子顯微鏡照片,第43圖之倍率為5〇萬彳立, 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 而第44圖為1〇〇萬倍之倍率。各個照片中’下方為鋼箱側, 上方為矽薄膜側。(Please read the precautions on the back before filling in this page) From the results shown in Table 12, it is clear that even in the batteries C1 to C4 with a film thickness of about 2 / zm, the microcrystalline silicon film can be obtained Ancient quantity maintains the holding rate. Tani Next, an electrode of microcrystalline silicon thin film on rolled copper foil will be formed. Workers made slices in the thickness direction as samples for microscope observation, and then observed them with a transmission electron microscope. Figures 43 and 44 show transmission electron micrographs near the interface between the copper foil and the silicon film on the electrode 0. The magnification of Figure 43 is 500,000. It is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The 44th figure is a magnification of 1 million times. In each picture, the bottom is the steel box side and the top is the silicon film side.

第43圖和第44圖中,下方之明亮部分可為鋼箔部分, 銅箔和矽薄膜之界面附近,朝向上方慢慢變暗。這部分(約 30nm至10〇nm左右)為鋼箔之銅和矽混合特別多之混合層 之一部分。該混合層中,矽和銅可能已合金化。又,如第 43圖和第44圖所示,可能為混合層部分和鋼箔之界面附 近能觀察到粒狀部分。該粒狀部分可以看到由鋼朝向矽擴 515124 經 濟 部 智 慧 財 產 局 員 工 消 費 合 社 印 製 A7 B7 五、發明說明(45 ) 散所造成之凹凸在其界面中。 其次’為測定混合層之深度方向的構成元素之濃度分 布,藉SIMS法,使Ο/為濺射源,測定銅元素(63Cu+)和氫 元素(Η )之濃度。第45圖表示混合層深度方向之各構成 元素之濃度分布,橫軸表示深度(/Zm),縱軸表示原子密度 (個 /cm3) 〇 如第45圖所示,混合層中,隨深度愈深,亦即愈接近 銅泊而銅濃度增加。在此,矽薄膜中以含有蓄電體材料 1%(原子密度為102<M@/Cm3)以上之層做為混合層時,可知 深度為1·9βπι左右之部分到2 7/Zm左右之部分為止有混 合層之存在。 —其次,就電解銅箔上形成有膜厚約2;zm之微結晶矽 溥膜之電極c3,以上述同樣方法藉sms測定混合層在深 度方向之各構成元素之濃度。其結果示於第46圖。如第 46圖所示,電極c3中,在矽薄膜之表面,銅㈣之原子 密度已經在厚子密度10、/cm3以上,鋼已擴散到石夕薄膜 之表面’而可看出矽薄臈全體己成為混合層。又’使用電 極c3之電池C3係顯示良好的充放電循環特性,可知矽薄 膜全體成為混合層也能做為電極活性物質而作用。 如第45圖和第46圖明顯顯示矽薄膜中之 呈現連續性變化。因此,在矽薄 又 ^ 仕y '寻膜中,銅疋素並非和矽形 成金屬間化合物,而和矽形成為固溶體。 如上所述,於mi和Μ膜之界面,係可確認鋼^ 而形成有混合層。藉由此種混合 本紙張尺㈣財_家鮮(cns)A4 “ ^ 311933 ^--------^--------- (請先閱讀背面之注意事項再填寫本頁) q丨年丨1}哗;$ Air? ui;In Fig. 43 and Fig. 44, the bright part below may be a steel foil part, and the area near the interface between the copper foil and the silicon film gradually darkens toward the upper side. This part (about 30nm to 100nm) is part of a mixed layer in which copper and silicon are particularly mixed in steel foil. In this mixed layer, silicon and copper may be alloyed. Further, as shown in Figs. 43 and 44, a granular portion may be observed near the interface between the mixed layer portion and the steel foil. The granular part can be seen from the steel spreading toward the silicon. 515124 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Affairs Co., Ltd. A7 B7 V. Explanation of the invention (45) The unevenness caused by the scattering is in the interface. Next 'is to measure the concentration distribution of the constituent elements in the depth direction of the mixed layer. Using the SIMS method, O / is the sputtering source, and the concentrations of the copper element (63Cu +) and the hydrogen element (Η) are measured. Fig. 45 shows the concentration distribution of each constituent element in the depth direction of the mixed layer, the horizontal axis represents the depth (/ Zm), and the vertical axis represents the atomic density (a / cm3). As shown in Fig. 45, in the mixed layer, as the depth increases, Deeper, that is, closer to the copper poise and the copper concentration increases. Here, when a layer containing 1% (atomic density of 102 < M @ / Cm3) or more of the storage material is used as the mixed layer in the silicon thin film, it can be seen that the depth ranges from about 1 · 9βπ to about 2 7 / Zm. So far there are mixed layers. -Next, the electrode c3 of a microcrystalline silicon rhenium film having a film thickness of about 2; zm was formed on the electrolytic copper foil, and the concentration of each constituent element in the depth direction of the mixed layer was measured by sms in the same manner as described above. The results are shown in Figure 46. As shown in Figure 46, in the electrode c3, on the surface of the silicon thin film, the atomic density of the copper hafnium is already above 10, / cm3, and the steel has diffused to the surface of the Shixi thin film. Has become a mixed layer. In addition, the battery C3 using the electrode c3 exhibits good charge-discharge cycle characteristics. It can be seen that the entire silicon thin film can also function as an electrode active material as a mixed layer. Figures 45 and 46 clearly show continuous changes in the silicon film. Therefore, in the silicon thin film, the copper compound does not form an intermetallic compound with silicon, but forms a solid solution with silicon. As described above, at the interface between the mi and M films, it was confirmed that the steel was mixed and a mixed layer was formed. With this kind of mixed paper ruler _ home fresh (cns) A4 "^ 311933 ^ -------- ^ --------- (Please read the precautions on the back before filling in this Page) q 丨 year 丨 1} Wow; $ Air? Ui;

五、發明說明(% ) ___V. Description of Invention (%) ___

修I 層之存在,可' Ρί Λθ > ^ ^ 乂 k向矽薄膜對於鋼箔之緊貼性,即使當充 Μ斤引起矽溥膜之膨脹收縮,矽薄膜亦不會自蓄電體之 •5名彔J離’而能獲得良好的充放電循環特性。 [產業上利用之可能性] 使用本發明之鐘電池用電極,可製成充放電容量高, 且充放電循環特性優異之鋰二次電池。 ---------------------------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297 46 311933The existence of the repair layer I can be used as Ρί Λθ > ^ ^ 乂 k-direction silicon film's closeness to steel foil, even when the silicon dioxide film expands and contracts due to the charge of silicon, the silicon film will not self-storage the electricity • Five people were able to get good charge-discharge cycle characteristics. [Possibility of industrial use] By using the electrode for a bell battery of the present invention, a lithium secondary battery having a high charge and discharge capacity and excellent charge and discharge cycle characteristics can be produced. ---------------------------- (Please read the notes on the back before filling out this page) The paper size of the paper is applicable to China National Standard (CNS) A4 (210 X 297 46 311933

Claims (1)

H3 pi 第89122034號專利申請案 申請專利範圍修正本 (91年1〇月 I. -種鐘電池用電極’係於蓄電體上設置有 釋放經之活性物質所構成之薄臈者,其特徵子^ 薄膜藉由在其厚度方向所形成之切縫而分離為柱 狀,且其柱狀部分之底部與前述t電體貼緊。 2. 如申請專利範圍第】項之鐘電池用電極,复; 述薄膜之厚度方向,至少厚度1/2以上之部:於: 由前述切縫而分離為柱狀。 " 3. ::請專利範圍第i項或第2項之鋰電池用電極, ^中’在形成前述切縫之際,使前述薄膜之表 成有凹凸,前述柱狀部分至少含有薄臈: 凸部。 ^ 调 4. 如申請專利範圍第3項之鋰電池用電極,i中,开, 成在前述切縫,使前述柱狀部> 包含有薄臈表面1 複數個凸部。 〜 經濟部中央標準局員工福利委員會印製 5·如申哨專利範圍第}項或第2項之鋰電池用電極, 其中:前述切縫係在第一次以後之充放電之際形成。 如申明專利範圍第5項之鋰電池用電極,其中,充 放電前在前述薄膜表面形成有凹凸,藉由第一次以 隻充放電,在刚述薄膜以其表面凹凸之谷部為端 料成切縫,且藉由該切縫使前述薄膜分離成為柱 本紙張尺度適用中ϋ g家標f (CNS) A_4規格(210 x 297公釐) 311933 •如申請專利範圍第6項之鋰電池用電極,其中,前 述薄膜表面之凹凸係相對應於底層之蓄電體表面之 凹凸。 •如申請專利範圍第7項之鋰電池用電極,其中,前 述蓄電體表面凹凸之凸部為錐體狀。 .如申請專利範圍第1項或第2項之鋰電池用電極, 一中 4柱狀部分之上方部分係帶有圓形之形狀。 1〇·如申請專利範圍第i項或第2項之鋰電池用電極, 其中’前述切縫係在充放電前事先形成者。 申靖專利範圍第1項或第2項之鐘電池用電極, 中 刖述’專膜係由經和形成化合物或固溶體之元 素周期表中IIB族、ΙΠΒ族、IVB族和VB族之元素, 以及周期表第4周期、第5周期和第6周期之過渡 金屬元素之氧化物以及硫化物中至少選擇一種材料 所構成者。 V 經濟部中央標準局員工福利委員會印制衣 12·如申請專利範圍第11項之鋰電池用電極,其中,前 述疋素係由碳、石夕、鍺、錫、錯、紹、鋼、辞、編、 鉍和汞中至少選擇一種者。 13·如申請專利範圍第11項之鋰電池用電極,其中,前 述元素為矽或鍺。 14.如申請專利範圍第i項或第2項之鋰電池用電極, 其中,前述薄膜係藉由CVD法、濺射法、蒸鍍法、 火焰噴塗法或電鍍法所形成之薄膜者。 二·如申請專利範圍第1項或第2項之鋰電池用電極, 本 適用 ~---- 2 311933 515124 H3 其中,前述薄膜為非結晶薄膜。 16. 如申請專利範圍第1項或第2項之鋰電池用電極, 其中,前述薄膜為非晶質薄膜。 17. 如申請專利範圍第1項或第2項之鋰電池用電極, 其中,前述薄膜為非結晶矽薄膜。 18. 如申請專利範圍第1項或第2項之鋰電池用電極, 其中,前述薄膜為微結晶矽薄膜或非晶質矽薄膜。 19. 如申請專利範圍第1項或第2項之鋰電池用電極, 其中,前述薄膜為非結晶鍺薄膜。 2 0.如申請專利範圍第1項或第2項之鋰電池用電極, 其中,前述薄膜為微結晶鍺薄膜或非晶質鍺薄膜。 21. 如申請專利範圍第1項或第2項之鋰電池用電極, 其中,前述薄膜為微結晶矽鍺合金薄膜或非晶質矽 鍺合金薄膜。 22. 如申請專利範圍第1項或第2項之鋰電池用電極, 其中,前述蓄電體係由銅、鎳、不銹鋼、鉬、鎢和 钽中至少選擇一種者。 經濟部中央標準局員工福利委員會印製 23. 如申請專利範圍第1項或第2項之鋰電池用電極, 其中,前述蓄電體之表面粗糙度Ra係0.01至1/zm。 24. 如申請專利範圍第1項或第2項之鋰電池用電極, 其中,前述蓄電體為銅箔。 2 5.如申請專利範圍第24項之鋰電池用電極,其中,前 述銅箔為電解銅箔。 2 6. —種鋰電池用電極,其特徵為於申請專利範圍第1 本紐、張尺度適用中 3 3Π953~ H3 H3 經 濟 部 中 央 標 準 員 福 委 員 會 印 製 項至第25項中任一項之鋰電池用電極中,切縫係沿 著薄膜中之厚度方向延伸之低密度領域所形成者。 27·如申睛專利範圍第26項之鐘電池用電極,其中,前 述低在度領域係由前述蓄電體表面凹凸之谷部向上 延伸。 28. 如申明專利範圍第】、2、“或”項之鋰電池用電 極’其中’前述薄臈中擴散有前述蓄電體之成分。 29. 如申請專利範圍第28項之鋰電池用電極,其中,已 擴散在刖述薄臈中之前述蓄電體之成分係不與前述 薄臈之成分形成金屬間化合物,而形成固溶體。 30·如申請專利範圍第卜^則之鐘電池用電 S ’其中,前述薄膜係藉由和鐘形成合金而能吸存 鋰之活性物質薄臈。 31:申=利範圍第卜2、26或27項之鐘電池用電 ” ”中,在前述薄膜中事先吸存或添加鋰。 特徵為具備有如申請專利範圍第1 項中任-項之電極所構成之負極與正極與 33:第一?也,其特徵為具傷有如申請專利範園 項至第31項中任一項之電極 極與非水電解質。 之負極與正 34·如申請專利範圍第33 正極係包括可吸存、釋放經之氧其中’前述 35.如申請專利範圍第33項之鋰 :活性物貪。 _ 、%池’其中,前述 311933 H3 正極係包括鋰氡化物做為活性物質。 36. -種二次電池用電極’其特徵為具備有由薄膜構成 a材料層肖和月述電極材料層冑貼之蓄電體, 薄臈形成有在面方向以網目狀相連接且朝向前 述畜電體在厚度方向延伸之低密度領域者。 7:申請專利範圍第36項之二次電地用電極,其中, 月J述薄膜中擴散有前述蓄電體之成分。 38=請專利範圍第37項之二次電池用電極, 擴散在前述薄膜中之前述” 薄臈成分形成金屬間化人物成刀,不與前述 39如㈣奎— 而形成固溶體。 9.如“專利關第36項至第Μ項中任 電池用電極’其中,前述薄膜係人 成前述蓄電體上之薄膜。 ㈣&成法形 40.如申請專利範圍帛%㉟之二次 前述薄臈形成法係指CVD法、濺射盈’其中’ 焰喷塗法或電鍍法。 W 〇鍍法、火 4!•如申請專利範圍第%項至帛 經 濟 部 中 .央 標 準 為 ,員 工 福 利 委 員 印 製 電池用電極’其中,前述蓄電體係二-::二* 凸,以該凹凸之谷部為基 上具有凹 域。 形成有前述低密度領 42.如申請專利範圍第41項之二·Α 前述蓄電體表面凹凸之凸部電池用電極’其中, A如申請專利範圍第36項至第3=。 電池用電極,苴中 、在一項之二次 一 /、中,刖述缚m表面形成 人 本 對應於 297公釐) 3U933 π寻利範圍第36項至第 電池用電極,其 4、弟38項中任一項之二次 沿著前述低二由前述薄臈之膨脹收縮,而 切縫將“;度項域在厚度方向形成有切缝,藉此 嗲將則述溥膜分離成柱狀。 •申請專利範圍第44項之_ & φ ^ % Μ ^ 項之—夂電池用電極,其中, 46如=膨脹收縮係藉由充放電而給與。 甲明專利範圍第36項至第3 電池用電極,… 項"壬項之一 47 ^ Λ 其中,刖述薄臈為矽薄膜。 •申請專利範圍第46項之-4 Λ # 項之一—人電池用電極,其中, 月J迷石夕薄膜係非晶質 48如 質夕薄膜或微結晶矽薄膜。 申呀專利範圍第36項至第38項中任—項之二次 4也用電極’其中’前述薄膜為鍺薄臈。 •:申請專利範圍第48項之二次電池用電極,其中, 别述鍺薄膜係非晶f錯薄膜或微結晶膜。 5〇·如申請專利範圍第36項至第38項中任—項之二次 電池用電極,其中,前述薄膜為石夕錯合金薄膜。 1 ·如申請專利範圍帛5〇 $之二次電池用冑孝虽,其中, 前述石夕錯合金薄膜係非晶㈣鍺合金薄膜或微結晶 矽鍺合金薄膜。 52.如申請專利範圍第36項至第38項中任一項之二次 電池用電極’其中,前述蓄電體之表面粗糙度R“ 0.0 1 至 1 // 111。 ·〜^ 、展尺度適用γ B g樣準(CNS) A4規袼(2i〇 χ 297^jy 5 3 ·如申請專利範圍第3 6項至第3 8項中任一項之二次 ^^__ 6 311933 515124 H3 電池用電極,其中,前述蓄電體為銅箔。 54. 如申請專利範圍第53項之二次電池用電極,其中, 前述銅箔為電解銅箔。 55. —種二次電池,其特徵為使用如申請專利範圍第36 項至第54項中任一項之電極。 56. 如申請專利範圍第55項之二次電池,其中,前述電 極係二次電池之正極及/或負極。 57. 如申請專利範圍第55項之二次電池,其中,前述二 次電池係非水電解質二次電池。 58. 如申請專利範圍第57項之二次電池,其中,前述非 水電解質二次電池係鋰二次電池。 經濟部中央標準局員工福利委員會印製 本紙張尺度適用中國國冢標準(CNS) A4規袼(210 X297公釐) 7 311933H3 pi No. 89122034 Patent Application Amendment to Patent Scope (October 1991 I.-Electrode for Clock Battery 'is a thin battery made of active material with a release agent installed on the battery, its characteristics are ^ The film is separated into a column shape by a slit formed in the thickness direction, and the bottom of the columnar part is in close contact with the aforementioned t electric body. The thickness direction of the film, at least a thickness of 1/2 or more: in: separated into a columnar shape by the aforementioned slit. &Quot; 3. :: Please use the lithium battery electrode for item i or item 2 of the patent scope, ^ In the formation of the slit, the surface of the film is uneven, and the columnar portion contains at least a thin ridge: a convex portion. ^ 4. If the lithium battery electrode of item 3 in the scope of the patent application, i , Open, formed in the aforementioned slit, so that the aforementioned columnar section > contains a plurality of convex sections on the thin surface. ~ Printed by the Staff Welfare Committee of the Central Bureau of Standards of the Ministry of Economic Affairs. The electrode for a lithium battery according to item 2, wherein: It is formed during the charge and discharge after the first time. For example, the electrode for a lithium battery in item 5 of the declared patent scope, wherein before the charge and discharge, unevenness is formed on the surface of the film, and for the first time, only charge and discharge are used. The film is slit with the valleys on its surface as the end material, and the slit is used to separate the aforementioned film into a cylindrical paper. Applicable to the standard of paper g f (CNS) A_4 (210 x 297 mm) 311933 • For the electrode for lithium battery in item 6 of the patent application, wherein the unevenness on the surface of the thin film corresponds to the unevenness in the surface of the bottom layer of the electricity storage body. • For the electrode for lithium battery in item 7 of the patent application, wherein the foregoing The convex part of the concave and convex surface of the electric storage body is a cone shape. For example, for the lithium battery electrode of the first or the second item of the patent application scope, the upper part of the middle part of the four pillars has a circular shape. For example, the lithium battery electrode used in item i or item 2 of the patent scope, where the aforementioned slit is formed in advance before charging and discharging. The battery electrode for item 1 or item 2 of the scope of Shenjing patent, Zhongli The 'special membrane system by the classics And elements of compounds IIB, IIIB, IVB and VB in the periodic table of the compounds or solid solutions, as well as oxides and sulfides of transition metal elements in the 4th, 5th and 6th periodic table. At least one of the materials is selected. V. Printed clothing of the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs 12 · For the lithium battery electrode of item 11 in the patent application scope, in which the aforementioned element is made of carbon, stone Select at least one of tin, copper, shao, steel, diction, editor, bismuth, and mercury. 13. For the lithium battery electrode according to item 11 of the patent application, wherein the aforementioned element is silicon or germanium. 14. If applying for a patent The electrode for a lithium battery in the range of item i or item 2, wherein the thin film is a thin film formed by a CVD method, a sputtering method, an evaporation method, a flame spraying method, or an electroplating method. 2. For the lithium battery electrode of item 1 or item 2 of the patent application scope, this application is ~ 2 311933 515124 H3, where the aforementioned film is an amorphous film. 16. For the lithium battery electrode according to item 1 or item 2 of the patent application scope, wherein the thin film is an amorphous thin film. 17. For the lithium battery electrode of item 1 or item 2 of the scope of patent application, wherein the thin film is an amorphous silicon thin film. 18. For an electrode for a lithium battery according to item 1 or item 2 of the patent application scope, wherein the thin film is a microcrystalline silicon film or an amorphous silicon film. 19. For the lithium battery electrode according to item 1 or item 2 of the patent application scope, wherein the thin film is an amorphous germanium thin film. 20. The lithium battery electrode according to item 1 or item 2 of the scope of patent application, wherein the thin film is a microcrystalline germanium film or an amorphous germanium film. 21. For the lithium battery electrode of item 1 or item 2 of the patent application scope, wherein the thin film is a microcrystalline silicon germanium alloy film or an amorphous silicon germanium alloy film. 22. For an electrode for a lithium battery according to item 1 or item 2 of the patent application scope, wherein the power storage system is selected from at least one of copper, nickel, stainless steel, molybdenum, tungsten, and tantalum. Printed by the Staff Welfare Committee of the Central Bureau of Standards of the Ministry of Economic Affairs. 23. For the lithium battery electrode of the first or second scope of the patent application, the surface roughness Ra of the aforementioned power storage body is 0.01 to 1 / zm. 24. For the lithium battery electrode of item 1 or item 2 of the scope of patent application, wherein the aforementioned electricity storage body is copper foil. 2 5. The electrode for a lithium battery according to item 24 of the patent application, wherein the aforementioned copper foil is an electrolytic copper foil. 2 6. —A kind of electrode for lithium battery, characterized in that it is applicable in the first scope of the patent application and the scale of the application 3 3Π953 ~ H3 H3 Any one of printed items to 25 items printed by the Central Standards Committee of the Ministry of Economic Affairs In an electrode for a lithium battery, a slit is formed in a low-density region extending along a thickness direction in a thin film. 27. The electrode for a clock battery according to item 26 of the patent application, wherein the aforementioned low-level area extends upward from the valleys on the surface of the power storage body. 28. As stated in the scope of the patent], 2, or "or" of the lithium battery electrode ', the component of the power storage body is diffused in the thin film. 29. For an electrode for a lithium battery according to item 28 of the application for a patent, in which the components of the aforementioned electricity storage body which have been diffused in the thin film are not formed into an intermetallic compound with the components of the thin film, and a solid solution is formed. 30. According to the scope of the patent application, the battery power S 'of the bell battery, wherein the thin film is an active material capable of absorbing lithium by forming an alloy with the bell. 31: In the application of the clock battery power item "2, 26 or 27" in the profit range, lithium is stored or added in advance in the aforementioned film. It is characterized by having a negative electrode and a positive electrode constituted by the electrode as described in any one of the item 1 of the scope of the patent application, and 33: the first? Also, it is characterized as being injurious as in any one of the patent application scope item to item 31. Electrode and non-aqueous electrolyte. Negative electrode and positive electrode 34. If the scope of the patent application is 33, the positive electrode system can absorb and release menstrual oxygen. Among them, the foregoing 35. If the scope of the patent application is 33, lithium: active matter is greedy. _,% Pool 'Among them, the aforementioned 311933 H3 positive electrode system includes lithium halide as an active material. 36. An electrode for a secondary battery, comprising an electricity storage body composed of a material layer composed of a thin film and an electrode material layer adhered to the moon, and a thin body formed in a mesh shape in a planar direction and facing the animal. A low-density field in which the electrical body extends in the thickness direction. 7: The electrode for secondary electric ground according to item 36 of the patent application, wherein the component of the aforementioned electricity storage body is diffused in the thin film of month J. 38 = Please use the electrode for secondary battery in item 37 of the patent, and the above-mentioned "thin" component diffused into the above-mentioned thin film will form an intermetallic figure and become a knife, and will not form a solid solution with the aforementioned 39 such as Jiu Kui-9. For example, "the battery electrode in any of the 36th to the Mth patents" wherein the aforementioned thin film is a thin film on the aforementioned electricity storage body. ㈣ & forming method 40. If the scope of the patent application is 帛% ㉟ twice, the aforementioned thin 臈 formation method refers to a CVD method, a sputtering method, among which, a flame spraying method, or an electroplating method. W 〇 Plating method, fire 4! • If the patent application scope item %% to the Ministry of Economic Affairs. The central standard is that the employee welfare committee printed the battery electrode 'Among them, the aforementioned storage system 2-:: 二 * convex, the The valley portion of the unevenness has a concave region on the base. The aforementioned low-density collar is formed. 42. As described in item 41bis of the scope of the patent application, A, the electrode for a convex part of the aforementioned surface of the power storage body, wherein A is as described in the scope of the patent application, 36th to 3rd. Batteries electrodes, 苴 中, 一项 一, 二次, 刖, the surface of the binding m to form a human body corresponding to 297 mm) 3U933 π profit-seeking range item 36 to the battery electrode, the 4, brother The second of any one of 38 items is followed by the expansion and contraction of the aforementioned thin ridges along the lower second, and the cut seam will be formed with a cut seam in the thickness direction, thereby separating the membrane into pillars. • 44 ^ ^ ^% Μ ^ of the scope of the patent application-夂 battery electrode, where 46 such as = expansion and contraction are given by charging and discharging. Jia Ming patent scope of 36 to The third electrode for battery, Item 47, one of the following items: ^ Λ Among them, the thin film is a silicon thin film. • One of the items in the patent application No. 46-4-Λ # —the electrode for human battery, of which, Moon J Mixi Xi thin film is amorphous 48 such as Zhi Xi thin film or microcrystalline silicon thin film. Shen Ya patent range of any of the 36th to 38th of the item-the second 4 of the electrode is also used 'where' the aforementioned film is germanium Thin 臈.: Electrode for secondary battery in the 48th scope of patent application, among which the germanium thin film is not f. Thin film or microcrystalline film. 50. For the secondary battery electrode of any one of the 36th to 38th of the scope of patent application, wherein the aforementioned thin film is a Shixo alloy thin film.胄 50 $ for secondary batteries, where the aforementioned Shi Xi Co alloy thin film is an amorphous rhenium germanium alloy thin film or a microcrystalline silicon germanium alloy thin film. 52. For example, in the 36th to 38th scope of the patent application The electrode for a secondary battery according to any one of the above, wherein the surface roughness R of the power storage body is “0.0 1 to 1 // 111. · ~ ^, The display scale is applicable to γ B g sample standard (CNS) A4 regulations (2i〇χ 297 ^ jy 5 3) such as the second application of any one of the 36th to 38th scope of the patent application ^^ __ 6 311933 515124 H3 battery electrode, in which the aforementioned electricity storage body is copper foil. 54. For example, for the secondary battery electrode in the scope of patent application No. 53, wherein the aforementioned copper foil is electrolytic copper foil. 55. — secondary The battery is characterized by using an electrode according to any one of items 36 to 54 of the scope of application for a patent. 56. A secondary battery such as item 55 of the scope of application for a patent, wherein the aforementioned electrode is a positive electrode of a secondary battery and / 57. For example, the secondary battery according to item 55 of the patent application, wherein the foregoing secondary battery is a non-aqueous electrolyte secondary battery. 58. For example, the secondary battery according to item 57 of the patent application, wherein the aforementioned non-aqueous battery The electrolyte secondary battery is a lithium secondary battery. The paper printed by the Staff Welfare Committee of the Central Bureau of Standards of the Ministry of Economic Affairs is compliant with the Chinese National Standard (CNS) A4 (210 X297 mm) 7 311933
TW089122034A 1999-10-22 2000-10-20 Electrode for a lithium battery and a lithium secondary battery TW515124B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP30164699 1999-10-22
JP35780899 1999-12-16
JP36530699 1999-12-22
JP37451299 1999-12-28
JP2000039454 2000-02-17

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293771B2 (en) 2010-06-30 2016-03-22 Furukawa Electric Co., Ltd. Anode for secondary battery, anode current collector, production method thereof, and secondary battery

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293771B2 (en) 2010-06-30 2016-03-22 Furukawa Electric Co., Ltd. Anode for secondary battery, anode current collector, production method thereof, and secondary battery

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