TW513487B - Method for producing anti-reflection plated film by sputtering and wet-type plated film - Google Patents

Abstract

A method for producing the anti-reflection layer of a high conductive multi-layered film, which can be used in a CRT product, comprises: using a sputtering to form a structure of the first three layers (first, second and third layers) and a conventional wet-type plating film to form a structure of the fourth layer. The first layer is the closest to the substrate and is formed by a sputtering process and, the transparent conductive layer has refractive index 1.85 to 2.1 at a wavelength of 520 nm. The second layer is on the first layer and is an oxide having a refractive index of 1.45 to 1.5 at a wavelength of 520 nm. The third layer is on the second layer and is an oxide having a refractive index of 1.9 to 2.2 at a wavelength of 520 nm. The fourth layer is deposited on the top and is produced by a wet-type silicon oxide plated film process and has a refractive index of 1.45 to 1.55 at a wavelength of 520 nm.

Description

513487

FIELD OF THE INVENTION The present invention relates to a method for manufacturing a coating film for fusing a cathode ray tube (CRT) with f. The coating film includes an optical effect layer system with anti-reflective effect and low resistance effect. More specifically, the present invention provides a "manufacturing method combining vacuum sputtering and wet coating, in which a vacuum is used to provide a highly conductive oxide layer, and a wet process uses a conventional spin coating to form a silicon oxide surface layer BACKGROUND OF THE INVENTION U.S. Patent No. 4,921,760 discloses a multi-layer antireflection coating with good adhesion characteristics between the Ce02 layer and the synthetic grease. The system of this multilayer film includes the following materials: Ce02, A1203, Zr02, Si02, T i 0 2 and T a 2 0 5. The films in this multilayer system are all produced by vacuum evaporation or money spattering, and there are three to five layers of films. For example, a five The total thickness of the layer structure is approximately 3 580 angstroms. The two thickest films in this five-layer structure are Ce02 (1360 angstroms) and Si02 (1220 angstroms). US Patent 5, 10 5, 3 1 0 No. reveals a multilayer anti-reflection coating by reactive sputtering and designed for use in an on-line coating machine. This multilayer film structure includes Ti 02, Si 02,

Zn0, Zr02 and Ta205. The films in this multilayer system are all produced by a vacuum evaporation or sputtering process, and there are four to six layers of films. For example, the total thickness of a six-layer structure is approximately 4700 Angstroms. And the two thickest films in this six-layer structure are zn0 (1,370 angstroms) and Si 02 (1,360 angstroms). U.S. Patent Nos. 5,091,244 and 5,40 7,73 3 disclose a new type of guide

513487 銮 89107402 V. Description of the invention (2) Electrical light attenuation anti-reflection layer coating. The scope of these patents primarily discloses a certain transition element nitride material that provides a conductive, light-attenuating, and reflective surface. This multilayer structure contains TiN, NbN, Sn02, SiO2, A1 203, and Nb205. The thin film materials in this multilayer structure are nitrides and oxides. There are three to four films in this multilayer structure. In the example in the patent, the total thickness of a four-layer structure is about 1610 angstroms, and the two thickest films are 2110 (650 angstroms) and 8 丨 2 (8 20 angstroms) respectively. . Both of these thin films have a transmittance of less than 50 percent for visible light. All X films are produced by vacuum evaporation or coin plating processes. U.S. Patent No. 5,14,1,25 discloses a multilayer anti-reflection film using zinc oxide to provide anti-ultraviolet light for wavelengths less than 380 nanometers (nm). This multilayer system includes Ti02, Si02, ZnO and MgF2. All films are produced by vacuum evaporation or sputtering processes. There are four to six thin film layers in this multilayer system. In the example in the patent, a five-layer structure, ′, and the endurance are about 7350 angstroms. And the two most important thin films are (4,390 angstroms) and j | gF2 (1,320 angstroms). All films are produced by vacuum evaporation or sputtering processes. ..., and U.S. Patent No. 5,170,29.1 discloses a four-layer structure with optical effect and high anti-reflection effect. These layers are formed by a pyrolitic method, a plasma chemical vapor deposition method, a sputtering method, and a chemical deposition method. It contains Si02, Ti02 'A1203, ZnS, MgO and Bi203. In the example described in the patent, the total thickness of a four-layer structure is about 2480 Angstroms. The two main thin films are Ti 〇2 (104 0 angstroms) and Si 02 (940 angstroms. US Patent No. 5, 2 1 6, 5 4 2 discloses a five-layer with high anti-reflection.

Page 5 513487 Λ Amendment No. 89107402 V. Description of the invention (3) Membrane structure. The process uses an adhesion layer (Ni, Cr, or NiCr) with a thickness of about 1 nanometer (nm). The other four-layer film consists of Sn〇2, Zr〇2,

ZnO, Ta205, NiO, Cr〇2, Ti02, Sb2O3, In2O3, A12〇3,

Si 02, TiN and ZrN. In the example in the patent, the thickness of a five-layer structure is approximately 2 33 7 Angstroms. 1 The two most important films are 1-500 angstroms) and 3102 (138 angstroms). Both films are less than 30% for visibility. Household thin films are produced by vacuum evaporation or coin plating. U.S. Patent No. 5,541,77 0 discloses that one fortune, seven people, and two are regarded as μ μ > Antireflection layer film. This is a five-layered system with four or three layers of electric ν, and the ancient one ^ = a. In this system II; the refractive index of light-absorbing metals such as Cr, μ0: 120 wide air film η. And the other "or four-layer structure is ⑽, IT., Material science and gas, and the main material in this layered system is lice and nitride, and the only 氺 璺 辇 >#, ^, The metal is used as an anti-reflection film in the anti-reflection film: the film is used. All the thin films are made of vacuum bells or ... Cheng Yi., Lee: The illustrated example, the total thickness of a five-layer structure ,,,,,,, ,, 矣, its main two layers are ITO (334 Angstroms) 'S1 0 2 (72 Angstroms). And this layered system has a transmittance of less than 60% for visible light. Patent No. 5,3 6 2,5 52 discloses a six-layer anti-reflection film including three conductive metal oxide layers. This system includes S i 〇2, I T 0, N b 2 0 5 and Ta20 'and is conductive. The metal oxide layer can also be included in the film in a thickness of about one visible wavelength. In the example of the six-layer structure in the patent, the two main films are Si 02 (85 54 Angstroms) and IT 0 (19). 7 5 Angstroms). All thin layers are produced by vacuum evaporation or sputtering.

Page 6 513487 ----- Case No. 89107402 Date _ Amendment ____ V. Description of the Invention (4) US Patent No. 5,5 7 9, 1 6 2 discloses a substrate with temperature sensitive properties like rubber Four anti-reflection layer films. One of these layers is a DC reaction metal emulsion that rapidly deposits and does not transfer a large amount of heat to the substrate. This layered system includes Sn02, Si02, and ITO. In the case of a four-layer structure, the two main thin films are S η 0 2 (763 Angstroms) and Si 02 (94 Angstroms). All films are produced by vacuum evaporation or sputtering processes. U.S. Patent Nos. 5,728,45 6 and 5,78 3,049 disclose an anti-reflective film capable of improving deposition on a plastic film. This multi-layer film is formed by using a roller ore film in the process of vacuum sputtering. This system consists of I T 0, S i 0 and a thin lubricating layer overlying a soluble fluoropolymer layer. In the example in the patent, the total thickness of a six-layer structure is approximately 2630 angstroms. The most important two layers are ITO (888 Angstroms) and Si 02 (86 Angstroms). From the above description, it can be clearly seen that in these thin film systems with high anti-reflection effect and high visible light transmittance (greater than 90%), all thin films are subjected to vacuum evaporation and / or sputtering produce. On the other hand, the thickness of the most important layer of high refractive index material in this type of system is between about 700 Angstroms and 2000 Angstroms, and the thickness of the most important layer of low refractive index material is about 700 Angstroms. Angstroms to 14 0 0 Angstroms. SUMMARY OF THE INVENTION The main object of the present invention is to provide an anti-static film through a sputtering process and an anti-reflection film using a wet process such as a spinning film, a sputter coating, and the like. The process of making a transparent conductive oxide film layer is useful in industrial mass production.

Page 7 513487 _Case No.891ί) 74Π? _YearMonthDay_Amendment V. Description of the Invention (5) High Reliability 'and has been required by industries such as semiconductors, displays, building materials, glass, and plastic boards for a long time. This is because it is easier to make a low-resistance and highly transparent conductive oxide film by using the sputtering process than the wet process (whether it is a spin coating or a sputter coating). The invention provides an antistatic mass production system combining anti-reflection, or physical vapor deposition on line and wet coating. Some well-known conductive oxide films such as Sn02, ZnO,

In203, Sn02: F. Sn02: Sb, In203: Sn, ZnO: A1,

Cd2Sn〇4, In203 — ZnO, Sn02 — ZnO, and In203 — Mg〇 are all quite high cost, low efficiency (high resistance), low usage (about 3% to 5%) from the wet coating process The resulting chemical solution. Roughly estimate the traditional system of cathode ray tube (CRT) composed of oxide, which needs to be antistatic effect (103 ~ 105Q / square) and the thickness of the optical anti-reflection equivalent film is about 200 nanometers. (Nm) (IT0: 100 nanometers (nm), silicon oxide: 1000 nanometers (nm)). Experiments have shown that for wet-type coatings of conductive oxides with thicknesses greater than 100 nanometers (nm), such as IT0, ATTO, IZ0, and AZ0, due to the baking action, they have low flatness, high resistivity, and low transmissivity. High cost. During the sputtering process of conductive oxides, the thickness should be less than 50 nanometers (nm) to meet the resistance value (10 ~ 10), and the flatness of the film, which is important in the optical anti-reflection effect, is less than three percent. And the film is harder than the material produced by the wet process (9 Η). On the other hand, in the wet process, the substrate temperature and baking process, which are quite sensitive to the thickness, also took 20 to 30 minutes longer, and this short cycle process is quite difficult for mass production. The invention provides the anti-static system anti-reflective ability of the three-layer oxide deposited by the pVD system and the silicon oxide deposited by the wet process. Because of the highly conductive oxide layer and diffusion

513487 _Case No. 89107402_Year Month Amendment _ V. Description of the Invention (6) The protective oxide layer is included by PVD. This multilayer system maintains low resistance and low anti-reflection ability in the wet film process of silicon oxide. The present invention also provides an anti-reflection layer film that can be applied to the surface of a cathode ray tube (CRT), which has high electrical conductivity and antistatic properties. The antireflection layer film of the present invention has a four-layer structure. The one closest to the substrate is called the first layer, the second to fourth layers and so on. Each layer is characterized by its thickness or optical thickness. Optical thickness is the thickness of each layer multiplied by its refractive index, and it is usually expressed as a fraction of the wavelength we design. The wavelength used in our invention is about 5 20 nanometers (nm) ° The first or innermost layer is composed of a transparent conductive oxide. Generally, this transparent conductive oxide is more commonly used because it has a small absorption of visible light, and its refractive index at the visible light wavelength of 5 2 0 nm (nm) is about 1. 8 5 to 2.1, optical thickness About one-sixth to one-tenth of the wavelength we design. The second layer is an oxide material. In general, since Si02 does not absorb visible light, its refractive index at the visible light wavelength of 5 2 0 nanometers (nm) is 1.4 to 1.5, and the actual thickness is about 1 0 0 at the wavelength we designed. Up to 300 nanometers (nm). The third layer is also an oxidizing material. The refractive index of this oxide layer is similar to that of TO. Generally, since SnO 2 does not absorb visible light, its refractive index at the visible light wavelength of 5 2 0 nm (nm) is 1.85 to 2 · 1, and the actual thickness at our designed wavelength is about 400 to 600 nanometers (nm). The fourth layer is the same as the second layer, the only difference is that the second layer is formed by the hidden bond method, and the fourth layer is produced by the wet process in the TEI S solution. Generally we

513487 _Case No. 891Q7402_Year Month Day__ 5. Description of the invention (7) This material is called silicon oxide. Its refractive index is between 1.45 and I 5 5 and its optical thickness is about a quarter of the wavelength we designed. In a preferred embodiment of the present invention, the first layer in the four-layer film structure is ITO, and its thickness is 40 nanometers (nm) in sample one, and its thickness is 25 nanometers (nm) in sample two. ). The second layer is Si02, with a thickness of 20 nanometers (nm) in sample one and a thickness of 25 nanometers (nm) in sample two. The third layer is SnO, with a thickness of 40 nanometers (nm) in sample one and a thickness of 55 nanometers (nm) in sample two. The fourth layer is silicon oxide with a thickness of 85 nanometers (nm) in sample one and sample two. The present invention can achieve the foregoing objective, that is, to obtain 1 02 Ω / square to 103Q / square from the I TO film, and in the range of visible light from 400 nanometers (nm) to 700 nanometers (nm), it can be used in glass or It is the low reflection spectrum obtained on the plastic substrate. In this four-layer optical film layer, the reflection is less than five percent at any wavelength in the wavelength range of 400 nanometers (nm) to 700 nanometers (nm). We can easily explain that this process is reliable, simple, easy to control and economical. It is quite possible to produce a low-resistance, high-hardness, and neutral anti-reflection film by such a process. A mass-produced or i η-1 in ne sputtering system will be used to deposit the first two, three layers of thin films that can be used as low resistance, high optical characteristics, and high scr a t c h resistance. The fishery coating system will be used to deposit a fourth silicon oxide layer at a reduced cost. In addition, the layered system in the present invention has high conductivity for electromagnetic shielding (EM I sh e e d), low reflection characteristics from an optical standpoint, high scratch resistance for surface coating, and can reduce costs. For example, we can use the results of sputtering and wet processes.

Page 10 513487 _ case number 89107402_ year month day amendment __ V. Description of the invention (8) Combined, a four-layer anti-reflection and anti-static film is completed on the cathode ray tube (CRT) broken glass substrate. This layered system can have low resistance of 102 Ω / square to 103D / square to pass TC09 9 and its hardness can pass military standard MIL — C — 48497 or MIL — C — 675 scratch test , And its optical quality is quite excellent, which can avoid reflection and artifacts. In addition, in the present invention, a DC ′ AC, RF magnetron sputtering system can be used under a 3 m Toi: r (m = miii = 0.001) pressure Ar ^ 〇2 gas mixture from I TO, Si, Sn The target provides first, second and third layers of thin film sputtering. The fourth film can be deposited at 330C and a baking temperature of 2000C / 30min by using a wet process such as spin sputtering or spray sputtering in a T E I S solution. The invention has the following advantages: For the traditional wet anti-reflection and anti-static coating process of cathode ray tube (CRT), it is difficult to pass TC 0 99, the thickness and quality of the film are quite sensitive to temperature and produce resistance and optics. Problem of effects. The cost of the chemical solution required for the low-resistance W-bond process is quite high, and the resistance is difficult to reach 10 2 Ω / square. The present invention includes two oxide layers formed by sputtering and one oxide layer formed by wet coating. There are two types of optical layered systems. We named them Sample 1 and Sample 2 respectively. . In sample 1, the thickness of the first, second, and third oxide layers is 40, 20, and 40 nanometers (nm). The thickness of the fourth silicon oxide layer is 85 nanometers (nm). Because the conductive thin film layer formed by the vacuum sputtering system can have a resistance as low as 102Ω / square. The second layer is also deposited using a sputtering system and can be used as a protective barrier for diffusion barriers. Third layer sputtering

513487 _Case No. 89107402_ Years and Months Amendment_ Five. Description of the Invention (9) The layer SnO is not easily etched by using a chemical solution, so it can be used as a protective layer against corrosion and I TO underneath. The fourth layer of silicon oxide is plated by a wet process, which is relatively easy to manufacture and low cost. What is more interesting is that the electrical group of this layered system is about 1 · 5 '1 0 2 Ω / square, and its reflectance is at all wavelengths between 400 nm (700 nm) and 700 nm (nm). Less than five percent, and the average reflectance is about 0.5 percent. For cathode ray tube (CRT) applications, it has extremely excellent properties. In Sample 2, the thicknesses of the first, second, and third oxide layers were 25, 30, and 55 nanometers (nm), respectively. The thickness of the fourth silicon oxide layer is 95 nanometers (nm). Its resistance is about 3.8 '102D / square and its optical effect has wide-band anti-reflection. The average reflectance is less than 0.5 percent. The invention is made of anti-reflection and anti-static film on glass, which is composed of three layers of money bonds and a wet-type coating layer with high-performance, easy-to-manufacture, low-cost and economic benefits. In order to make the steps, effects, and characteristics of the present invention more comprehensible, examples are given below in conjunction with the drawings to explain the preferred implementation of the present invention: The preferred specific examples illustrate that in the present invention we have achieved the objectives described above , That is, a four-layer film system made by sputtering and wet processes on a cathode ray tube (CRT) substrate, and a range of visible light wavelengths between 400 nm (nm) and 700 nm (nm) Here you can get low resistance and low reflectivity. This multi-layer system is serially numbered by the layer closest to the substrate, which means that the thinnest film deposited on the substrate is the first layer. The thickness of each layer is expressed by its actual thickness (in nanometers (nm)) or the optical thickness expressed as a fraction or multiple of the wavelength of visible light.

Page 12 513487 _Case No. 89107402_ Year Month Amendment _ V. Description of the invention (10) The specific layered structure of the present invention is shown in Figure 1. The substrate 5 is composed of glass' plastic foil or other transparent materials. The direction of vision is shown by arrow six. The first layer 1 is connected to the five front ends of the substrate. In the direction of the observer, the first layer 1 on the substrate is the second layer 2. The third layer 3 of the four layers is placed on top of the second layer 2. The outermost fourth layer 4 is placed on top of the third layer 3. The first, second, third, and fourth layers constitute the layered system of the present invention. There are two types of this optical layered system, named sample one and sample two. In sample one, the first layer is ITO and its thickness is 40 nanometers (nm). Its refractive index is about 1.98 at a wavelength of about 5 2 nanometers (nm). The second layer is SiO2 with a thickness of 20 nanometers (nm) and a refractive index of 1.46 at a wavelength of about 520 nanometers (nm). S i 0 2 is used as a diffusion barrier layer. The third layer is Sn02 and has a thickness of 40 nanometers (nm) and a refractive index of 2. 00 at a wavelength of about 520 nanometers (nm). This layer of SnO is used as a resistance layer for chemicals. The fourth layer is silicon oxide with a thickness of 85 nanometers (nm) and a refractive index of 1.5 at a wavelength of 520 nanometers (nm). It is also the only thin film made from the TE I S solution under atmospheric pressure by the wet coating method. The other first, second and third layers are deposited using a vacuum sputtering system. The thicknesses of the first, second and third layers in sample two are 25, 28 and 55 nanometers (nm), respectively. The thickness of the fourth layer of silicon oxide is 95 nanometers (nm). In this sample, it has broad-band anti-reflection optical properties. Figure 2 shows the spectrum of the layered system in Sample 1. The reflectance (in percent) is measured from the front of the glass. The visible light spectrum ranges from 400 nanometers (nm) to 700 nanometers (nm). The dotted graph shows the reflection characteristics of the first, second, and third layers made by sputtering.

Page 13 513487 Case No. 89107402 Amendment V. Description of the Invention (11) The graph of this layered system clearly shows that it has a center wavelength in the range of 5 7 0 nm (nm) to 590 nm (nm). Very low reflectivity (0.1%), while the reflectance is less than 5% in the wavelength range of 400 nanometers (nm) to 700 nanometers (nm). The resistance of this layered system is 1.36 '102 W / square, and the hardness of the pencil is 9H. For CRT, CDT, FED, PDP and other applications have quite good results. Table 1 in Annex 1 shows all the information about resistance, boat hardness (pe n c i 1), and C I E color from 400 nanometers (nm) to 700 nanometers (nm). 102W / square, while ship 2 shows the hardness from 400 nanometers ‘wrong pen (pe n c i 1). Figure 3 shows the spectrum of the layered system in sample 1. The reflectance (in percent) is measured from the front of the glass. The visible light spectrum ranges from 400 nanometers (nm) to 700 nanometers (nm). The dotted graph shows the reflection characteristics of the first, second, and third layers made by sputtering. The graph of this layered system clearly shows that it has a very low reflectance (0.2%) in the range of the center wavelength from 440 nanometers (nm) to 580 nanometers (nm). In the wavelength range of 400 nanometers (nm) to 700 nanometers (nm), it has broadband optical anti-reflection characteristics, and its reflectance is less than five percent. The resistance value of this layered system is 3. 9 6 ′ The pen (pe n c i 1) has a hardness of 9 Η. Attachment 1 All the information about electrical resistance and C I E color between 4 (nm) and 700 nanometers (nm). In the magnetron system in the reaction gas mixture of Ar and 02, the first, second and third oxide layers are made by sputtering. The targets of the first, second and third layers are I TO, Si and Sn, respectively. The distance from the target to the substrate is 15 cm. There was no heating during the sputtering process. The fourth silicon oxide layer is resistant to plating at room temperature 3 3 0 C by spin coating, and is

Page 513 487

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513487 Attachment Table 1 · Minimum reflectance, bottom wavelength resistance, pencil hardness CIE color (x, y) 0.02% 577.94η m 1.3 59 χ102Ω / □ 8H ~ 9H (0.26761, 0.20798) Wavelength (nm (nm)) _Reflection (percent) _ CRT // IT0 / Si02 / Sn0 CRT // IT0 / Si02 / Sn0 Ί 2 / SiOx __ 400 5.02 420 4.86 440 6.15 460 8.26 480 9.7 500 11.77 520 12.89 540 13.91 560 15.18 580 15.97 600 16.27 620 16.82 640 16.95 660 17.24 680 17.44 700 17.1 / 751814 ./065347 H -...... 5 4 3 2 10 0.18 0.02 0.17 0.52 16 5 2 0 6 3 0 1 1 2 Table 2.Minimum reflectance bottom wavelength resistance値 Pencil hardness CIE color (x, y) 0.16% (Wb and) 440 ~ 580 nm 3.96 × 102Ω / □ 8H ～ 9H (0.31562, 0.12193) CRT // IT0 / Si02 / Sn0 Ύ CRT // IT0 / Si02 / Sn0, / SiOx 400 13.66 4.07 420 10.54 1.2 440 9.54 0.28 Wavelength (nanometer (nm)) _Reflectivity (percent) 16 513487 460 480 500 520 540 560 580 600 620 640 660 680 700 9.79 10.06 11.11 11.63 3 2 8 16 8 9 4 3 3 3 4 4 4 4 5 1 1X Ί -Η lx 1 × ix- · 4 6 3 7 8 2 7 4 0.16 0.23 0.25 0.23 0.18 0.16 0.2 0.33 0. 56 0.88 1.27 1.7 2.17 Table 3 \ Material thickness, degree of ore film method Raw material coating situation Sample sample First layer ITO 40nm 2 5 nm Sputt erin g ITO 3 mTorr Second layer Si02 2 Onm 2 8nm Sputterin g Si 3 mTorr Brother Two layers of Sn02 40nm 5 5 nm Sputterin g Sn 3 mTorr Fourth layer of Silica 8 5 nm 95nm Spin coating TEIS Covering temperature: 33 ° C Baking temperature: 200 ° C / 3 Omin

17 513487 Brief description of the diagram. Figure 1 shows the unit table according to Figure 2. Figure 3 shows the unit table. Case number 89107402_year, month, and day. A schematic cross-sectional view of the layered system according to the present invention; The reflection curve of the system is shown) as a function of wavelength (in nanometers). The relationship between the reflection curve of the layered system in sample 2 and the wavelength (in nanometers) is shown. (In percentage (in percentage

Claims (1)

513487 8911. Like the month of January, 1, 1, and I. 6. Patent applications for one or four layers. 1. An anti-reflective screen filter that includes a four-layer structure with the first, second, and third layers. A layer close to a substrate is called the first layer by analogy to the fourth layer. The first layer is located below the second layer and has a refractive index of 1.85 to 2.11 at a wavelength of 520 nanometers (nm). Consisting of conductive oxide material, the actual thickness of this layer is between 25 and 50 nanometers (nm); the second layer is above the first layer and has a refractive index of 1.45 to 520 nanometers (nm) Made of 1.50 oxide, the actual thickness of this layer is between 10 and 30 nanometers (nm); the third layer is above the second layer and has a refractive index of 1 at a wavelength of 520 nanometers (nm) · 9 to 2 · 2 chemical resistant oxides, the actual thickness of this layer is between 40 and 60 nanometers (nm); four layers are located above the third layer and have a refractive index at a wavelength of 520 nanometers The meter (nm) is composed of oxides of 1.45 to 1.55, and the actual thickness of this layer is between 85 and 100 nanometers (nm). 2. For example, the anti-reflection screen filter in the first scope of the patent application, wherein the substrate is plastic. 3. The anti-reflective screen filter as described in the first item of the patent application, wherein the substrate is glass. 4 · The anti-reflection screen filter in the first item of the patent application scope, where the first layer is ITO, the second layer is SiO2, the third layer is Sn02, and the fourth layer is oxidized stone. 5. The anti-reflection screen filter as described in the first item of the patent application, wherein the first layer is selected from the group consisting of conductive oxides including ITO, IZO and ATO. Page 17 513487 _Case No. 89107402_ Year and Month Amendment_ VI. Patent Application Range 6. For example, the anti-reflection screen filter in the first item of the patent application range, where the second layer is selected from the group consisting of Si 02 and Si A 1- Oxide oxide group. 7. The anti-reflective screen filter as described in the first item of the patent application, wherein the third layer is selected from the group consisting of Sn02 and ZnO oxide. 8. For the anti-reflective screen filter in the first item of the patent application, the fourth layer may be selected from the group of conductive compounds including SiO2, SiA, Oxide and SiO compounds. 9. For example, the anti-reflection screen filter in the first item of the patent application, where most of the layers can be formed by a combination process of vacuum coating and wet coating, and the vacuum coating method includes thermal evaporation and sputtering, which can be used. In industrial mass production or on-line system; in industrial mass production or on-line system, wet coating includes spin coating, sputtering coating, cast film, or rolling coating from solution, and gel (sol-gel ) Or coating process such as mud 0 Page 18