TW512485B - Method for coating material with low dielectric constant at an elevated process yield - Google Patents

Abstract

The present invention discloses a method for coating a material with a low dielectric constant, particularly pre-wetting the surface of a wafer with the solvent of the material with a low dielectric constant prior to the process of coating the material with a low dielectric constant. Prior to the application of coating of a wafer, a pre-wetting process is carried out to increase the yield of coating. The method comprises: prior to coating a wafer, using the solvent of the material with a low dielectric constant to pre-wet the surface of the wafer; after the coating operation, performing a preliminary bake; introducing nitrogen to dry the solvent; and performing a curing stage to complete the coating process.

Description

V. Description of the invention (1) Field of invention: Silk preparation means low-dielectric-constant materials. The ancient method is the second method for coating low-dielectric-constant materials, especially pre-wet a solvent with a good quality on the wafer surface. ς A method for heading the process yield with a low dielectric constant material. Background of the invention: As the resistance value of a wire increases in inverse proportion to its cross-sectional area, the line width of a metal interconnect :::, a set of circuits, the resistance value will increase by two! As the degree increases, as the degree increases, the metal interconnects the combined capacitance of the integrated circuit of the welcome circuit = the distance decreases by 1 and the wire is caused: after the field, gold :: connect: = integrated circuit The manufacturing process is deep and subtle; this affects the operation of the integrated circuit :: and the hysteresis of the electric valley is greatly increased, and also due to the accumulation density of the road, the rate of access ... The best choice to improve the integrated circuit is to replace the input,. Under the condition of mentioning the most, the material of the interlayer dielectric layer in the interconnection. In addition to the characteristics of Jinliangliang, it must have a good "value. On the other hand, the interlayer dielectric must be based on the original J " Dl elec trie Constant. 2. Silicon monoxide to reduce The dielectric constant of the coupling electric wire between the metal interconnects is about 3.9. Therefore, the dielectric constant, dielectric, and dielectric must be selected as the interlayer dielectric layer in order to reduce the resistance. 512485 Description of the invention (2) The effect of capacitor hysteresis, such as: silicon dioxide (Si i) doped with fluorine, organic spin-on glass (S0G), etc. However, coating dielectric materials on the wafer will be subject to particles and surfaces The effect of characteristics. Due to the poor characteristics caused by particles, pattern defects, poor insulation film pressure resistance, poor local implantation during ion implantation, etc. In the actual device manufacturing process, more particles may be adsorbed on the surface of the silicon wafer. The processes include (1) dry etching process, (2) ion implantation process, (3) sputtering film formation process, (4) chemical vapor deposition process, etc. In addition, it may be adsorbed on the wafer Surface process, in addition to the above-mentioned process, there is still a slight The basic consideration method of particle removal is to first reduce the particles on the wafer surface, but it is also one of the methods that must be considered to remove by wet cleaning. The result of coating with the previous technology is shown in the figure Second (a), in the conventional wafer coating process, it is easy to form a lot of small particles on the wafer surface; when it is more serious, the phenomenon of unevenness may even occur. The present invention has the above-mentioned shortcomings, Therefore, a new method is proposed as a method for improving the wafer coating process. OBJECTS AND SUMMARY OF THE INVENTION The main purpose of the present invention is to make low-k dielectric materials before coating.

512485

The solvent is used to pre-wet the low-dielectric wafer on the wafer sheet, and then the process of baking the low-dielectric constant material surface, and then the method of improving the material includes coating the above-mentioned low-dielectric material. Finally, the low and high coating process yield is cured. Firstly, the constant-constant material is first wetted with a solvent, and then the dielectric-constant material is dried. The above low dielectric constant materials include, but are not limited to ... (a) Si lk

(Aromatic alkyne polymer), (b) LKD-5109 (Inorganic siloxane polymer), (c) Nanoglass-E (Inorganic siloxane polymer) ^ (d) Flare (I n 〇 r g a n i c s i 1 〇 x a n e p 〇 1 y m e r). The pre-wetting solvent includes at least: (a) Solvent: PG ME A (propylene glycol monomethyl ether acetate) and its applicable low dielectric constant material: Silk (Aromatic alkyne polymer) N LKD-510 9 (Inorganic siloxane polymer); and (b) Solvents. · GBL (Gama-butyl lactone) is suitable for low dielectric constant materials such as Nanog1 ass —E (Inorganic siloxane polymer), Flare (Inorganic siloxane polymer). 0 Detailed description The present invention relates to a low dielectric constant Method for pre-wetting material to improve the yield of coating process; in particular, it relates to a method for coating low dielectric constant

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The present invention discloses a method for coating a semiconductor substrate using a solvent with a low dielectric constant material to pre-wet the substrate. The low dielectric constant material includes, but is not limited to: (a) suk (Aromatic (alkyne polymer) > (b) LKD-5109 (Inorganic siloxane Polymer) (c) Nanog1ass-E (Inorganic siloxane polymer), (d) XLK (Inorganic siloxane polymer). The composition of the low-dielectric constant material mentioned above includes: silicon: 0 ~ 30%, oxygen: 0 ~ 50%, carbon: 10 ~ 94%, hydrogen: 5 ~ 50%.

The aforementioned pre-wetting solvents include at least, but not limited to, (a) solvents: PGME A (propylene glycol monomethyl ether acetate) and its applicable low dielectric constant materials: Silk (Aromatic alkyne polymer), LKD-5109 (Organic siloxane polymer); and (B) Solvent: GBL (Gama-butyl lactone). Suitable low dielectric constant materials are Nanoglass-E (Inorganic si 1oxane polymer)-XLK (Inorganic s i1oxane polymer). O Please refer to the process flow chart of the first embodiment of the present invention. See figure one;

Page 7 J. V. Description of the invention (5) Before we perform wafer coating, we will use # ^ ^,, πη · Λ low) to reduce the temperature of the material. At 100, Qing paid special attention to the pre-wetting effect of each real milliliter dose. "To: set parameters of the environment: rotation speed of about 2500-30 million revolutions per minute, lasting about y, · li / after finishing coating, Need to go through the baking process 11 〇, steam the solvent X / to form a solid material with dielectric isolation, in other words, the volume will become smaller after heating. Continue the drying stage 丨 20, according to the environmental parameters of the invention is: : Rotation speed 3 0 0 0 revolutions / minute for 25_35 seconds / again 'to perform the drying phase in a nitrogen atmosphere 130: The environmental parameter of the drying process is that the rotation speed is between 2 0 0 0 to 45 0 0 revolutions / Minute, the temperature is between 80 ~ 350 degrees Celsius for 5 ~ 10 minutes; finally, the curing stage UQ is used to cure the coated dielectric material: for example, its speed is between 2000 ~ 4500 Turn / minute, and under the parameters of temperature between 35 ~ 45 degrees Celsius, pass in nitrogen for stabilization Process (.ding 6). The present invention discloses a process of pre-wetting a solvent on a wafer surface with a solvent before coating a low dielectric constant material to replace the conventional technique of pre-wetting a solvent without a solvent. The wafer surface process can improve the yield of the coating process. Please refer to the comparison of Figure 2 (a) 2 0 0 and (b) 2 0 0. In the conventional art, if there are particles or defects on the surface of the wafer This method can improve the phenomenon of unevenness. Please refer to Figure 2 (a), (b), apply the film layer on the wafer respectively, and use the above serial number score as the worst case condition. . It can be seen from the figure that [the prior art film layer cannot be attached, and the film layer can be coated on the worst-case surface using the present invention, which shows the efficacy of the present invention.

Page 8 512485 V. Description of the invention (6) The yield of the coating process obtained by each embodiment of the present invention is much higher than that of the coating process of the conventional technology; therefore, the solvent (b) disclosed in the present invention is used to predict the yield of the coating process. The process of wet 2 10 wafer surface instead of (a) the process of pre-wetting 2 0 0 on the wafer surface without solvent can not only greatly improve the process yield of subsequent processes, but also greatly improve component performance. It also reduces manufacturing costs. In addition, by adjusting the parameters of the wafer coating process of the present invention, for example, moderately adjusting the dosage to achieve a better pre-wetting effect; adjusting and setting the parameters of the coating environment: (speed, time, temperature); adjusting settings The parameters of the baking process are of great help to the design and application of components. The above description uses the preferred embodiments to explain the present invention in detail without limiting the scope of the present invention, and those skilled in the art can understand that appropriate changes and adjustments will still be made without losing the essence of the present invention. The spirit and scope of disengagement.

512485 Brief description of the diagram Figure 1. Flow chart of the pre-wetting function of the preferred embodiment of the present invention. Figure 2. (a) No pre-wet treatment is used, compared to (b) a comparison of the pre-wet treatment. Drawing number table I 0 0 Pre-wet II 0 Preliminary drying 1 2 0 Re-drying 1 3 0 Nitrogen drying 1 4 0 Curing stage 2 0 0 Without pre-wetting treatment 2 1 0 After pre-wetting treatment

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Claims (1)

5 J 2485 II-~ ^ r ··· Application for special toughness margin 1. A method of coating a low dielectric constant material, comprising: pre-wetting the wafer surface with a solvent; coating the above low dielectric constant material on a crystal On a round surface; baking the above-mentioned low dielectric constant material; and curing the above-mentioned low dielectric constant material. 2 · The method for coating a low dielectric constant material as described in item 1 of the scope of the patent application, wherein the parameters for coating the above low dielectric constant include a rotation speed of about 2 500-3 0 0 revolutions per minute, And it lasts 2-6 seconds. 3-The method for coating a low dielectric constant material as described in item 1 of the scope of the patent application, wherein the step of drying the low dielectric constant material includes a rotation speed between 2 0 0 to 4 5 0 revolutions per minute And for 2 5-3 5 seconds. 4. The method for coating a low dielectric constant material as described in item 1 of the scope of the patent application, wherein the above-mentioned baking step includes baking in a nitrogen-containing environment, and the parameters for baking in a nitrogen-containing environment include: The temperature ranges from 80 to 350 degrees Celsius for 5 to 10 minutes. 5. The method for coating a low dielectric constant material as described in item 1 of the scope of patent application, wherein the parameters of the above curing step include a temperature between 350 and 450 degrees Celsius 6. The coating as described in item 1 of the scope of patent application Square of low dielectric constant material Page 11, /, 'Scope of patent application The dosage is between 3 and 5 ml. / 'Where the above pre-wetting solvent enables Fushi I to apply the low-dielectric-constant material described in item 1 of the patent scope ^ where the above-mentioned low-dielectric-constant material f includes at least · r Eight φ silent material: SHk (Aromatic alkyne polymor). 8 4fn • Number of squares of coated low dielectric constant material f as described in item 1 of the scope of patent application: The above low dielectric constant materials include at least: LKD 5109 (Inorganic sii〇xane p〇lymer) . The low-dielectric-constant material in the above-mentioned low-dielectric-constant material coated in the constant i of the low-dielectric-constant material coating described in item i of the patent application includes at least: (c) Low-dielectric ^ Nanoglass > E (Inorganic siloxane polymer P · The method for coating low-dielectric constant materials as described in item i of the patent application scope. When the above-mentioned low-dielectric constant materials include at least: ⑷Low-k dielectrics · XLK (Inorganic siloxane polymer). The method of coating low-dielectric constant materials described in item 丨 of the patent scope, among which the above-mentioned pre-wetting solvents include at least: (a) Solvent: pg μ EA (propylene glycol monomethyl ether acetate). Application of the low-dielectric-constant Beifang 512485 as described in item i. 6. The method of applying for a patent, in which the above-mentioned pre-wetting solvent includes at least: (b) the solvent GBL (Gama-buty 1 1 act one) o 1 3. A method for coating a low-dielectric-constant material, which comprises performing a pre-wetting treatment using a solvent corresponding to the low-dielectric-constant material before coating the low-dielectric-constant material. Conducive to coating the above-mentioned low dielectric constant materials. 1 4 · The method for coating a low dielectric constant material as described in item 13 of the scope of the patent application, after the solvent is pre-soaked with the wafer, the method further includes: coating the low dielectric constant material; baking The low dielectric constant material; and curing the low dielectric constant material. 1 5 · The method for coating a low dielectric constant material as described in item 13 of the scope of patent application, where the low dielectric constant material includes at least: (a) Low dielectric constant material: Silk (Aromatic a 1 kyne polymer). 16. The method for coating a low dielectric constant material as described in Item 13 of the scope of patent application, wherein the low dielectric constant material includes at least: (b) a low dielectric constant material: LKD-5109 (Inorganic si 1 oxane polymer). 17. The method for coating a low dielectric constant material as described in item 13 of the scope of patent application, wherein the low dielectric constant material includes at least: (c) a low dielectric constant Page 13 512485 VI. Negative materials in the scope of patent application · Nano glass-E (Inorganic silo xane polymer 1 8 · The method of coating low dielectric constant materials as described in item 13 of the scope of patent application, of which the low dielectric constant The dielectric constant materials include at least: (d) Low dielectric constant materials: XLK (I η 〇rganicsi 1 ο X ane ρ ο 1 ymer). 1 9 · Coated low dielectric as described in item 13 of the scope of patent application Electrical constant material method, wherein the pre-wetting solvent includes at least (a) the solvent PGMEa (Propylene glycol monomethyl ether acetate). 2 0. The method for coating a low dielectric constant as described in item 13 of the scope of the patent application, wherein the pre-wetting solvent includes at least: (h) fen w η material of the material k grain GBL (Gama-butyl 1 act one ) 〇21. The method of coating low dielectric constant & as described in item 14 of the scope of patent application, wherein the above-mentioned coating of the low dielectric constant loose number material is 1 ounce of gold and 4 persons 2 5 0 0-3 0 0 0 rpm for 2-6 seconds. Zangba containing rotation speed of about 2 2 · As described in the scope of application of the patent application No. 14 ^ ^ ^ w low dielectric drooping method, where the above low dielectric constant wire # # today * number of materials in μ shell No. 4 between 2 0 0 ~ 4 5 0 0 revolutions per minute, and lasts for 2 5 ~ 3 5 seconds. Dream already contains speed 2 2 · As mentioned in the patent application scope No. 14 Taishi Low Dielectric Hall 512485 VI. Method for applying for a patent, wherein the above baking step includes baking in an environment containing nitrogen, and the parameters for baking under a nitrogen environment include: the temperature ranges from 80 to 350 degrees Celsius for 5 to 10 minute. 2 4 · The method for coating a low dielectric constant material as described in item 14 of the scope of patent application, wherein the curing parameters include a temperature between 350 ° and 4500 ° C. Page 15