512409 經濟部智慧財產局員工消費合作社印製 A7 ____BL________ 五、發明說明（） 發明領域： 本發明係與半導體製造之濺鍍過程相關。更特定說 來，本發明係關於半導製造時濺鍍過程所用之靶材的設 計。 發明背景： 物理氣相沉積法（亦稱作濺鍍法）係為一種以一固 態金屬（例如：欽）作為一錢鏡源或乾材而將該金屬沉積 至一基材上的方法。物理氣相沉積過程中，高能量離子轟 擊該靶材中的金屬，金屬原子因而產生，其中形成濺鍍現 象之南邊量離子一般為惰性氣體（例如：氯氣）。錢鍵過 程中’基材被置於一座檯上，並與乾材以一選定距離相隔， 並相對於一電源產生之電漿而維持於一負電壓值。由於處 理室内維持低壓，多數之濺鍍金屬原子或原子群沿某些角 度以大致為線性軌跡之方向移動。一般而言，賤鐘室内氣 體之組成及壓力係將處理室内壓力抽至約1 〇·9托耳、接著 再以氬氣將室内壓力回充至數毫托爾而得。當氣體壓力值 為此時，該濺鍍室中的座檯得向上舉升，使靶材與基材間 的距離得小於該氬氣氣體分子之平均自由徑。因此，許多 被濺出I粒子得以在不發生碰撞的條件下直接行進至該基 材上° 然而，由於與氣體碰撞、電場效應等因素之影響， 相當多數之濺鍍粒子被散射至空氣中。該等散射粒子合再 沉積至該賤鍍室之各不同表面上，例如··再沉積至該：材 第4頁 (請先閱讀背面之注意事項再填寫本頁) -I ·1111111 » — — — — — — — — I —Αν — ^— — — «Μ·Ι^ΙΙΗΙΙΙ1 — — — — — — — — A7 -- B7 —--- 五、發明說明（） 本身之側壁上。再沉積至該靶材上的材料隨時間累積而以 顆粒或片狀的形式存在。濺鍍過程中，靶材被加以一直流 電（DC )電源，並接著在更換基材時將該直流電源移去。 因此，該起材及再沉積材料受到連續加溫及冷卻，並因此 產生熱應力。經過一段時間後，該熱應力使沉積於該靶材 側壁之顆粒狀材料變得鬆散並掉落至該基材上。附著於該 側壁之低附著強度材料容易變得鬆散，並使該濺鍍室中粒 子行為變得較差。該沉積材料之附著強度取決於碰撞至該 靶側壁之入射角。通常說來，入射角愈接近直角時產生之 碰撞作用力愈大，在該沉積材料與該靶材側壁間形成的附 著強度亦愈大。 發明目的及概述： 本發明係關於提供一種物理氣相沉積系統用之濺鍍 靶材’該靶材可減少濺鍍過程中粒子的產生。依據本發明 一實施例，一種物理氣相沉積系統所用之設備包含一靶 材，且該靶材之側壁有一底切外形，該底切處構成一淨沖 蚀區域及一淨再沉積區域。 經濟部智慧財產局員工消費合作社印製 在本發明另一實施例中，一物理氣相沉積系統之一 靶材包含一下表面，一側壁形成於該下表面處，該靶材側 壁包含一底切部分，該底切部分構成一淨沖蝕區域及一淨 再沉積區域。在本發明另一實施例中，提供一靶材之製造 方法，該方法包含決定一第一靶材之側壁上一轉折點的步 驟。該轉折點界定一淨沖蝕區及一淨再沉積區之所在位 第5頁 本紙張尺度適用中國國家標準(CNS)A4規格（210x 297公餐了 512409 (請先閱讀背面之注意事項再填寫本頁) -fm - 線丨φ! 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 置，且依據該決定所得之轉折點，一底切外形可提供於第 二乾材之一側壁上。 痛|式簡單說明： 第1圖所示為本發明一實施例中一濺鍍室的剖面簡圖； 第2圖所示為本發明一實施例中一濺鍍室的剖面簡圖，其 中該 >賤鍍室包含一濺鍍靶材； 第3A圖所示為本發明一實施例之一濺鍍靶材的下視圖； 第3B圖所不為第3A圖中該濺鍍靶材截線A-A所得之剖 面示意圖； 第3C圖所示為第3A圖及第3B圖中該濺鍍靶材之一側壁 區的放大剖面圖； 第3D圖所示為本發明一實施例中第3A圖及第3B圖之濺 鍍靶材的一些尺寸設計； 第4A圖所示為第3A圖及第3B圖之濺鍍靶材一側壁區的 放大剖面意圖，其中顯示一淨再沉積區及一淨沖蝕 區之所在位置； 第4B圖所示為一傳統靶材側壁區的放大剖面圖，其中顯 示一淨再沉積區及一淨沖蝕區之所在位置； 第5 A圖所示為本發明另一實施例之濺鍍乾材的剖面圖； 第5B圖所示為第5A圖之濺鍵乾材的側壁放大示竟圖· 第6A-6D圖所示為本發明其它實施例中濺鍍靶材的側壁 剖面圖； 第7圖所示為一傳統乾材的側壁剖面圖； 第6頁 本紙張尺度適用中國國豕標準（CNS)A4規格（210 χ 297公餐） _ 512409 A7 _B7_五、發明說明（） 第8圖所示為採用一傳統濺鍍靶材進行之粒子添加實驗的 結果；及 第9圖所示為本發明一實施例中採用一側壁處具有一唇部 (lip )之濺鍍靶材所施行之粒子添加實驗的結果。 圖號對照說明： 經濟部智慧財產局員工消費合作社印製 100 直 流（DC)磁控濺射系統110 磁 鐵 120 靶 材 125 切 換 裝 置 127 負 電 壓 源 130 氣 體 遮 蔽屏 131 供 應 氣 體 132 孔 隙 133 離 子 135 電 子 137 正 電 荷 離子 138 鈥 140 工 部 支 撐夾盤 150 工 部 152 基 材 I52a 頂 表 面 155 金屬 膜 160 電 漿 200 濺鍍 室 202 外 殼 204 氣 體 入 π 206 夾 盤 208 靶 材 210 底 表 面 212 側 壁 214 暗 區 遮 蔽屏 218 區 域 300 靶 材 配 置 302 支撐 背 板 304 靶 材 306 低 圓 形 邊緣 307 第 一 直 徑 308 中 圓 形 邊緣 309 第 二 直 徑 310 上 圓 形 邊緣 3ll 第 三 直 徑 第7頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂--------- ^ — φ!.——H ------------- 512409 A7 _B7五、發明說明（） 312 厚 度 314 直 徑 318 區 域 401 空 間 402 唇 部 404 傾 斜 之 底 部邊緣 406 水 平 之 上部邊緣 408 曲 線 尖 端 410 垂 直 邊 緣 412 底 部 曲 處 414 上 部 曲 處 416 外 部 延 伸 部 420 轉折 邊 緣 450 轉折 點 452 淨 沖 蝕 區 454 淨 再 沉 積 區 500 靶 材 設 置 502 支撐 背 板 504 靶 材 506 區 域 600 靶 材 側 壁 602 唇部 604 凹 槽 606 垂 直 邊 緣 608 上 部 曲 率半徑 610 外 部 延 伸 部 612 靶 材 側 壁 614 垂 直 邊緣 618 垂 直 邊 緣 620 側 壁 622 唇部 624 上 部 邊緣 702 區 域 800 圖 表 802 X 轴 804 Y 轴 900 圖 表 902 X 轴 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 904 Y 軸 發明詳細說明： 請參閱第1圖。第1圖所示為本發明之一直流（DC) 磁控濺鍍系統之示意圖，其中一磁鐵110置放於一靶材120 第8頁 訂---------線--^丨·---Η· I --- I i I I I I I I I I I I I · 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 512409 A7 B7512409 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ____BL________ V. Description of the Invention () Field of the Invention: The present invention is related to the sputtering process of semiconductor manufacturing. More specifically, the present invention relates to the design of targets used in the sputtering process during semiconductor manufacturing. BACKGROUND OF THE INVENTION: Physical vapor deposition (also known as sputtering) is a method that uses a solid metal (such as Chin) as a mirror source or a dry material to deposit the metal onto a substrate. During the physical vapor deposition process, high-energy ions bombard the metal in the target, and metal atoms are generated. The amount of ions on the south side of the sputtering phenomenon is generally an inert gas (for example, chlorine). During the Qianjian process, the substrate is placed on a table, separated from the dry material by a selected distance, and maintained at a negative voltage value with respect to the plasma generated by a power source. Due to the low pressure maintained in the processing chamber, most of the sputtered metal atoms or atomic groups move along some angles in a generally linear trajectory. Generally speaking, the composition and pressure of the gas in the base clock room is obtained by pumping the pressure in the processing chamber to about 10.9 Torr, and then recharging the chamber pressure to several millitorr with argon. When the gas pressure value is this, the seat in the sputtering chamber must be lifted upward, so that the distance between the target and the substrate is smaller than the average free diameter of the argon gas molecules. Therefore, many sputtered I particles can travel directly to the substrate without collision. However, due to the impact of gas collision, electric field effects and other factors, a considerable number of sputtered particles are scattered into the air. The scattering particles are then deposited on different surfaces of the base plating chamber, for example ..... deposited on this: Material Page 4 (Please read the precautions on the back before filling this page) -I · 1111111 »— — — — — — — — I —Αν — ^ — — — «Μ · Ι ^ ΙΙΗΙΙΙ11 — — — — — — — A7-B7 —--- 5. Description of the invention () itself on the side wall. The material re-deposited onto the target material is accumulated in the form of particles or flakes over time. During the sputtering process, the target is supplied with a direct current (DC) power supply, and then the DC power supply is removed when the substrate is replaced. Therefore, the starting material and the redeposition material are continuously heated and cooled, and thermal stress is generated accordingly. After a period of time, the thermal stress causes the granular material deposited on the sidewall of the target to loosen and fall onto the substrate. The low-adhesion-strength material adhering to the side wall easily becomes loose and makes the particle behavior in the sputtering chamber poor. The adhesion strength of the deposited material depends on the angle of incidence on the target sidewall. Generally speaking, the closer the incident angle is to the right angle, the greater the collision force is, and the stronger the adhesion strength between the deposition material and the sidewall of the target is. OBJECTS AND SUMMARY OF THE INVENTION: The present invention relates to providing a sputtering target for a physical vapor deposition system. The target can reduce the generation of particles during the sputtering process. According to an embodiment of the present invention, a device used in a physical vapor deposition system includes a target, and a sidewall of the target has an undercut profile, and the undercut forms a net erosion area and a net redeposition area. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In another embodiment of the present invention, a target of a physical vapor deposition system includes a lower surface, and a side wall is formed at the lower surface. The side wall of the target includes an undercut. In part, the undercut portion constitutes a net erosion area and a net redeposition area. In another embodiment of the present invention, a method for manufacturing a target is provided. The method includes the steps of determining a turning point on a sidewall of a first target. This turning point defines the location of a net erosion area and a net redeposition area. Page 5 This paper size applies Chinese National Standard (CNS) A4 specifications (210x 297 meals and 512409) (Please read the precautions on the back before filling in this (Page) -fm-Line 丨 φ! Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention, and according to the turning point obtained by the decision, an undercut shape can be provided on one of the second dry materials On the side wall, the pain | style is simply explained: FIG. 1 is a schematic sectional view of a sputtering chamber in an embodiment of the present invention; FIG. 2 is a schematic sectional view of a sputtering chamber in an embodiment of the present invention Wherein, the > base plating chamber contains a sputtering target; FIG. 3A is a bottom view of a sputtering target according to an embodiment of the present invention; FIG. 3B is not the sputtering target in FIG. 3A A cross-sectional view of the cross section AA of the material; FIG. 3C shows an enlarged cross-sectional view of a side wall region of the sputtering target in FIG. 3A and FIG. 3B; Figures 3A and 3B show some dimensions of the sputtering target; Figure 4A shows Figures 3A and 3 In Figure B, an enlarged cross-sectional view of a sidewall region of the sputtering target is shown, which shows the location of a net redeposition region and a net erosion region. Figure 4B shows an enlarged cross-sectional view of a conventional target sidewall region. Shows the location of a net redeposition area and a net erosion area; Figure 5A shows a cross-sectional view of a sputter-dried material according to another embodiment of the present invention; Figure 5B shows the sputtering key of Figure 5A An enlarged view of the side wall of the dry material. Figures 6A-6D are cross-sectional views of the side wall of a sputtering target in other embodiments of the present invention. Figure 7 is a cross-sectional view of the side wall of a conventional dry material. Page 6 This paper size is applicable to China National Standard (CNS) A4 specification (210 χ 297 meals) _ 512409 A7 _B7_ V. Description of the invention () Figure 8 shows the particle addition experiment using a traditional sputtering target. Results; and Figure 9 shows the results of particle addition experiments performed using a sputtering target with a lip at the side wall in an embodiment of the present invention. Employee Consumer Cooperative Printed 100 Direct Current (DC) Magnetron Sputtering System 110 Magnet 120 Target 125 Switching device 127 Negative voltage source 130 Gas shielding screen 131 Supply gas 132 Aperture 133 Ion 135 Electron 137 Positive charge ion 138 — 140 Supporting chuck 150 Supporting 152 Substrate I52a Top surface 155 Metal film 160 Plasma 200 Sputtering chamber 202 Housing 204 Gas inlet π 206 Chuck 208 Target 210 Bottom surface 212 Side wall 214 Dark area shielding screen 218 Area 300 Target configuration 302 Supporting back plate 304 Target 306 Low circular edge 307 First diameter 308 Medium Rounded edge 309 Second diameter 310 Upper rounded edge 3ll Third diameter Page 7 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page ) Order --------- ^ — φ! .—— H ------------- 512409 A7 _B7 V. Description of the invention () 312 thickness 314 diameter 318 area 401 space 402 Lip 404 Sloped bottom edge 406 Horizontal top edge 408 Curved tip 410 Vertical edge 412 Bottom curve 414 Upper curve 416 Outer extension 420 Turning edge 450 Turning point 452 Net erosion zone 454 Net redeposition zone 500 Target setting 502 Supporting back plate 504 Target 506 Zone 600 Target sidewall 602 Lip 604 Groove 606 Vertical edge 608 Upper curvature radius 610 External extension 612 Target sidewall 614 Vertical edge 618 Vertical edge 620 Side wall 622 Lip 624 Upper edge 702 Area 800 Figure 802 X-axis 804 Y-axis 900 Figure 902 X-axis (please read first Note on the back, please fill out this page again.) Printed on the 904 Y-axis invention by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics: Please refer to Figure 1. Fig. 1 is a schematic diagram of a direct current (DC) magnetron sputtering system according to the present invention, in which a magnet 110 is placed on a target 120. Page 8 Order --------- line-^丨 · --- Η · I --- I i IIIIIIIIIII · This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 512409 A7 B7
五、發明說明（） 一部份的上方，該靶材包含一沉積產生部位，且該沉積產 生部位具有導電性，並由一欲濺鍍材料（例如：欽金屬） 所組成。典型上，該把材120具有對稱之形狀（例如一圓 盤狀），但也可為其它型態。該靶材120構建為可置入至 相對應之D C磁控滅射系統1 0 0、並可從中移去。p v 〇製 程中每一靶材因濺鍍沉積後產生材料流失，故定期以新乾 材置入其中代用之。 一切換裝置125用以選擇性將該乾材120連接至一相 對負電壓源127。一般而言，該負電壓源127提供一 DC 陰極電壓，該陰極電壓約為-350伏特至-530伏特之間， 且以-470伏特至-530伏特者為更佳（相對於相對應之陽極 (於圖例中為接地或GND者）而言），其中該陰極實際電 壓依設計而有不同。當切換裝置125將一負電壓源127緊 密連接至該靶材120時，該靶材120就如同一負電荷粒子 源（其產生之帶負電粒子如135所標示），因此該靶材12〇 也可稱作陰極。 一管狀污染性氣體遮蔽屏130(通常為圓柱形式）置 放於該靶材120下方，並與該靶材120分開。該遮蔽屏130 具導電性，且通常與接地點（GND )或另一正參考電壓處 耦合，以界定該靶材120與該遮蔽屏130之間的電場。該 遮蔽屏1 3 0有複數個孔隙1 3 2貫穿其中，用以使氣流（例 如：氬氣）從遮蔽屏130外部送至該遮蔽屏130内部。 一工部支撐失盤140位於該靶材120中心處下方，並 與該靶材120分開，且通常位於該遮蔽屏丨3〇内部。該夹 第9頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 訂---------線丨丨；---τ—--------- 512409 A7 B7 五、發明說明（） 盤140具導電性，且通常也與一接地點電壓（GND)或另 一正參考電壓耦合，以界定該靶材120與該夾盤140之間 的另一電場。 一可置換之工部丨5 〇 (例如：一半導體晶圓）置放於 該夾盤140之上，且位於該靶材12〇下方。在濺鍍製程尚 未啟動前’該工部150由一基材152構成，該基材152具 有一暴露頂表面152a所組成。當實施PVD濺鍍時，一金 屬膜155形成於該基材152之上，該金屬表面具有一頂表 面155a ’ 一般皆希望金屬膜155可均勻沉積於基材的整 個頂表面1 5 2 a上。 該工件基材1 5 2包含一絕緣層，例如：二氧化矽。如 此，金屬膜155可與該夾盤140呈電性絕緣，因此金屬膜 155相對於該夾盤14〇電壓（例如：GND )而言能具有微 呈負電之電壓。 DC磁控濺鍍的動作說明如下《當切換裝置丨25閉接 時，該靶材120與該遮蔽屏130及該夾盤140間產生初始 電場，並將電漿激發氣體導入。第1圖所示之組件通常容 置於一低壓濺鍍室105 (部分顯示）中，部份供應氣體131 進入該遮蔽屏130内部而被離子化，受到初始電場作用提 供正電荷離子（Ar+ )及電子。 由於靜電吸引力之作用，該離子133之一者加速朝向 該靶材120底表面之第一碰撞處行進並碰撞之，該碰撞點 以一星號“ ”代表之。該初始碰撞誘使該陰極1 2 0處激 發一電子135，該碰撞也將靶材材料（Ti)之一粒子逐出。 第10頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之>JL意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 ---------^ιφι0.---Μ]---- 512409 A7 B7 五、發明說明（） (請先閱讀背面之注意事項再填寫本頁) 該激發電子135朝下方遷移至更具正電性之夾盤14〇。然 而，該磁鐵no產生之磁場使該電子135呈一螺旋狀執跡 行進。最終’該電子1 3 5與流入氣體丨3 i (通常為一惰性 氣體，例如：氬氣）之一分子發生碰撞。上述第二次碰撞 處產生另一正電荷離子（Ar+)，該正電荷離子加速 朝向該靶材120底表面之第一碰撞處行進並碰撞之。該第 三次碰撞並無放射出任何電子，且因而建立一連鎖反應， 使該污染性氣體遮蔽屏1 3 0内部產生之電漿丨6〇得以維 持。相對於該陰極120而言，該電漿帶有正電性，並具有 活動式陽極的作用，因而改變DC磁控物理氣相沉積系統 100内之電場分佈。在某一時間點時，電場分佈轉呈穩定， 並長期呈現此穩定狀態。 質重粒子（例如：正電荷離子137)與該靶材120底 表面的碰撞有時會使該靶材材料少量粒子離開靶材，並朝 下往該工部150移動，鈦靶材138發射出之粒子即為其中 之一例。這些靶材發射之粒子的尺寸及方向易於在該工部 150頂表面上產生一相對均勻之發射材料（鈦）。 經濟部智慧財產局員工消費合作社印製 請參閱第2圖。圖中所示者一濺鍍室200之側示圖， 該圖提供本發明實施例及該濺鍍室中各副件之相對尺寸的 更精確說明。該漱鍍室通常包含一錢鍍室外殼202，該外 殼具有一個或一個以上之氣體入口 204。一基材支撐座檯 或工部夾盤206置於該濺鍍室的底部，而一靶材208容置 於該濺鍍室的頂部處。該靶材208包含一下表面201及側 壁212，其中後者位於該靶材208之周緣處。該外殼2〇2 第11頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 512409 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 係以接地為佳，且因該外殼202接地之緣故，該靶材208 上的一負電壓得以維持。一暗區遮蔽屏214與該側壁緊密 鄰接，其鄰接程度至足以防止電漿在兩者間形成為原則。 請參閱第3A圖。圖中所示為一靶材配置3〇〇之下視 圖，該靶材配置300適用於該濺鍍室200中。該把材配置 3 00具有一支撐背板302，一靶材304則固定於該支撐背 板3 02上。接繼之，將該支撐背板以螺絲固定於該濺鍍室 200壁上，以便將該靶材置放於該濺鍍室200中合適位置。 在本發明另一實施例中，該靶材配置300為單一副件，此 時該靶材3 04與該支撐背板302由相同材料組成。在本發 明之一實施例中，該支撐背板302係由銅合金（例如：鉻 銅合金或鋅銅合金）所製成，而該靶材304由鈦所製成。 在本發明其它實施例中，乾材係由鋁、輕、銅或其他賤鍍 材料所製成。該靶材具有一低圓形邊緣3 06，具有一第一 直徑307 ; —中圓形邊緣308，具有一第二直徑3〇9，其 中該第二直徑309約小於該第一直徑307 ; —上圓形邊緣 310，具有一第三直徑311，且該第三直徑311延伸部較 該第一直徑為大。在本發明一實施例中，第一直徑、第二 直徑、第三直徑分別約為12.554吋、12.524吋及12.75 吋。以此結構觀之，該下及中圓形邊緣在該靶材之側壁上 構成一突起部份或一唇部（lip),以下將有更詳細之說明。 請參閱第3B圖。圖中所示為第3A圖中該濺鍍靶材 沿截線A-A所得之剖面示意圖。該靶材配置之厚度3 i 2 約為0.600吋。該支撐背板3〇2之直徑314約為1658吋， 第12頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ·· 訂---- -1 fli n Γ— fl— n «Γ ϋ I n It ϋ ϋ «ϋ H «ϋ n ϋ < 512409 A7 B7 五、發明說明（） 而厚度314約為〇·33忖。在本發明之其它實施例中’上 述尺寸可能不同。 弟3C圖所示為弟2圖之一區域218的放大圖’該區 域218相當於第3B圖中之區域318。該區域顯示出該靶 材側壁212、該暗區遮蔽屏214及上述二者間之一空間 401。其中，該靶材側壁212包含一唇部402 ,該唇部402 之範圍由該側壁212上一底切部份界定。該唇部402包含 一傾斜之底部邊緣404及一水平之上部邊緣406，一曲線 尖端408將上述二者相互隔開。在本發明之一實施例中， 該曲線尖端408之曲率半徑（& )約不大於〇.〇5吋，並 以0.00 5吋者為更佳。通常而言，該尖端408之曲率半徑 應較小，以更能描繪出該傾斜邊緣404及該水平邊緣406。 然而，該曲率半徑卻必須大至足以防止該尖端408處變彎 (成弧形）。該傾斜底部邊緣404之曲率半徑（R2 )約不大 於0·5吋，並以0.08吋為更佳。該傾斜之底部邊緣404 連接至一轉折邊緣420，該轉折邊緣420連接至該靶材之 底表面210。該轉折邊緣420之曲率半徑（R3 )約不大於 1吋，並以0.12吋為佳。該轉折邊緣420與該底表面210 形成一角度（Θ〗），該©1約介於〇〜90度之間，以約介 於5〜35度為更佳，並以約為15度為最佳。在本發明之 另一實施例中，該傾斜之底部邊緣404直接連接至該底表 面210，且在上述兩者間並不具有該轉折邊緣42 0。 在本發明之一實施例中，該靶材側壁更包含一垂直邊 緣410、一底部曲處412、上部曲處414及一外部延伸部 第13頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) (請先閱讀背面之注意事項再填寫本頁) # 訂---------線丨---; 經濟部智慧財產局員工消費合作社印製 Μ 2409 Α7 Β7 五、發明說明（ 416,其中該垂直邊緣41〇位於該唇部4〇2的上部邊緣上 万。孩垂直邊緣之角度（θ2)以大於或約等於C度者為 佳，並以大於或約等於80度者更佳，以使材料在再沉積 於該垂直邊緣時具有較佳之附著性。當碰撞之入射角愈接 近直角時，碰撞至該靶材側壁上之材料通常具有較佳的附 著性（即較不可能變得鬆散而掉落），因此粒子控制之問 題變得較不嚴重。第7、圖所示為一傳統㈣側壁的剖面 圖，其中該側壁具有一區域702 ^入射材料大致以一入射 角（α)碰撞該區域702,其中該入射角大體上約 小於直角。因此，該材料無法緊密附著於該區域7〇2上'， 並可能在一基材處理時因鬆散而掉至該基材上。 請向前參閱冑3C ®。在該實施例中，相對於該水平 邊緣406 (且相對於該靶材之底表面21〇)而言，該垂直 邊緣410形成一直角。該底部曲處412之半徑（r )約為 0.008吋，但在其它實施例中可達到約為〇 25吋·該上部 曲處414之半徑（R5)約為G.G8叶，但在其它實施例中 可達到約為〇 · 5吋。 在一實施例中，該唇部402之一垂直延伸部γ高度 約介於〇·〇5〜0.3吋之間，並以約〇 〇94吋為更佳其中 該垂直延伸部係指該乾材底表面210至該曲線尖端4〇8之 垂直距離。另外，該垂直延伸部Υ亦可約大於〇3吋。詨 唇部402之一水平延伸部X約介於〇〇1〜〇 2忖之間，2 以0.015吋為更佳，其中該水平延伸部χ係指該垂直邊緣 41〇至該曲線尖端408之水平距離，在本發明另—實施例 第14頁 國國^標準TCNS)A4規格（210 χ 297公釐 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 --------^---------^ — 01.---.------------------- 512409 A7 B7 五、發明說明（ 中，該水平延伸部X者約介於0.01〜〇.〇5吋之間。該唇 部4 02之水平延伸部χ可利用遮蔽部分之垂直邊緣410 而減少該垂直邊緣41〇上再沉積情事之發生。因此，一較 長之水平延伸部X通常能提供一較佳之遮蔽功能。本發 明另一實施例中，該水平距離X約介於〇 〇5吋及不超過 該暗區長度以内，其中該該暗區在濺鍍室中的長度通常約 為0·6对’其理由容後再述。如果該水平距離X超過暗區 長度時’電漿可在該暗區401處激發形成，這明顯為不希 望發生之情事。為防止上述情形發生，該濺鍍室中的配置 應使該暗區遮蔽屏與該靶材間之距離小於該暗區長度。 該暗區係指一電漿與一固態表面間之邊界處，且與 Debye長度相關，其中Debye長度為電漿之特徵長度， 在此特徵長度上有一電墨降。該Debye長度以下列數學 式（MKS制）表示之： f請先閱讀背面之ii意事項再填寫本頁) # ne 經濟部智慧財產局員工消費合作社印製 其中為自由空間之介電率，κ為波茲曼常數，Te為電 子溫度，η為電漿密度，而e為一電子所帶之電荷。該暗 區與該Debye長度及該電漿與該固態表面間之電壓相關。 雖然該Debye長度為一精確界定值，但該暗區之延伸部 卻不是，因為該暗區延伸部仍與電子與中子間之碰撞長度 相關。該暗£長度或距離在低壓（<10亳托耳）時之估 計可以下式為之： 第15頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） ^------------ -n n n n 1 ϋ 512409 A75. Description of the Invention (1) Above the part, the target material includes a deposition-producing site, and the deposition-producing site is conductive and is composed of a material to be sputtered (eg, Chin metal). Typically, the handle 120 has a symmetrical shape (e.g., a disc shape), but other shapes are also possible. The target material 120 is constructed so as to be able to be inserted into and removed from the corresponding DC magnetically extinguishing system 100. In the p v 〇 process, each target material is lost due to sputter deposition, so it is periodically replaced by fresh dry material. A switching device 125 is used to selectively connect the dry material 120 to a relative negative voltage source 127. In general, the negative voltage source 127 provides a DC cathode voltage, the cathode voltage is between -350 volts and -530 volts, and preferably between -470 volts and -530 volts (relative to the corresponding anode (In the case of ground or GND in the legend), the actual voltage of the cathode varies according to the design. When the switching device 125 tightly connects a negative voltage source 127 to the target material 120, the target material 120 is the same source of negatively charged particles (the negatively charged particles generated by the target material are indicated as 135), so the target material 120 is also Can be called the cathode. A tubular contaminating gas shielding screen 130 (usually cylindrical) is placed below the target 120 and separated from the target 120. The shielding screen 130 is conductive and is generally coupled to a ground point (GND) or another positive reference voltage to define an electric field between the target 120 and the shielding screen 130. The shielding screen 130 has a plurality of pores 132 running through it, so that the air current (for example, argon) is sent from the outside of the shielding screen 130 to the inside of the shielding screen 130. A work support support disc 140 is located below the center of the target 120 and is separated from the target 120, and is usually located inside the shielding screen 30. The paper on page 9 of this folder applies Chinese National Standard (CNS) A4 specifications (210 X 297 meals) (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy ------ line 丨 丨; --- τ ----------- 512409 A7 B7 V. Description of the invention () Disk 140 is conductive, and usually also connected to a ground point voltage (GND) Or another positive reference voltage is coupled to define another electric field between the target 120 and the chuck 140. A replaceable work unit 5o (for example, a semiconductor wafer) is placed on the chuck 140 and located below the target 12o. Before the sputtering process is started, the process section 150 is composed of a base material 152 having an exposed top surface 152a. When PVD sputtering is performed, a metal film 155 is formed on the substrate 152, and the metal surface has a top surface 155a. It is generally desirable that the metal film 155 can be uniformly deposited on the entire top surface 1 5 2 a of the substrate. . The workpiece substrate 152 includes an insulating layer, such as silicon dioxide. In this way, the metal film 155 can be electrically insulated from the chuck 140, so the metal film 155 can have a slightly negative voltage with respect to the voltage of the chuck 14 (for example, GND). The operation of DC magnetron sputtering is described as follows: When the switching device 25 is closed, an initial electric field is generated between the target 120, the shielding screen 130, and the chuck 140, and a plasma excitation gas is introduced. The components shown in Figure 1 are usually housed in a low-pressure sputtering chamber 105 (partially shown). Part of the supply gas 131 enters the shielding screen 130 and is ionized. It is provided with positively charged ions (Ar +) by the initial electric field. And electronics. Due to the electrostatic attraction, one of the ions 133 accelerates toward the first collision point on the bottom surface of the target 120 and collides with it. The collision point is represented by an asterisk "". The initial collision induces an electron 135 at the cathode 120, and the collision also drives out a particle of the target material (Ti). Page 10 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the &J; Italian Matters on the back before filling out this page) Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ------- ^ ιφι0 .--- Μ] ---- 512409 A7 B7 V. Description of the invention () (Please read the precautions on the back before filling this page) The excited electron 135 migrates downward to the more Positively charged chuck 14o. However, the magnetic field generated by the magnet no causes the electrons 135 to travel in a spiral shape. Finally, the electron 1 3 5 collides with a molecule of the inflow gas 3 i (usually an inert gas, such as argon). Another positively-charged ion (Ar +) is generated at the second collision, and the positively-charged ion accelerates toward the first collision at the bottom surface of the target 120 and collides with it. The third collision did not emit any electrons, and thus a chain reaction was established, so that the plasma generated inside the shielding screen 130 was maintained. Compared with the cathode 120, the plasma is positively charged and has the function of a movable anode, thereby changing the electric field distribution in the DC magnetron physical vapor deposition system 100. At a certain point in time, the electric field distribution becomes stable and shows this stable state for a long time. The collision of heavy particles (for example: positively charged ions 137) with the bottom surface of the target 120 sometimes causes a small amount of particles of the target material to leave the target and move downward toward the working section 150, and the titanium target 138 is emitted. The particle is one of them. The size and orientation of the particles emitted by these targets are prone to produce a relatively uniform emitting material (titanium) on the top surface of the section 150. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Please refer to Figure 2. Shown in the figure is a side view of the sputtering chamber 200, which provides a more accurate illustration of the relative dimensions of the embodiments of the present invention and the various components in the sputtering chamber. The rinsing chamber typically includes a coining chamber housing 202 having one or more gas inlets 204. A substrate support base or chuck 206 is placed at the bottom of the sputtering chamber, and a target 208 is housed at the top of the sputtering chamber. The target 208 includes a lower surface 201 and side walls 212, the latter of which is located at the periphery of the target 208. This case 2102 page 11 This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 512409 A7 B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs It is good, and because the casing 202 is grounded, a negative voltage on the target 208 is maintained. A dark area shielding screen 214 is closely adjacent to the side wall, and its adjacency is sufficient to prevent the formation of plasma between the two. See Figure 3A. The figure shows a target configuration 300 below, the target configuration 300 is suitable for use in the sputtering chamber 200. The handle configuration 300 has a support back plate 302, and a target 304 is fixed on the support back plate 302. Next, the supporting back plate is fixed on the wall of the sputtering chamber 200 with screws so as to place the target in a suitable position in the sputtering chamber 200. In another embodiment of the present invention, the target configuration 300 is a single accessory. At this time, the target 304 and the support back plate 302 are composed of the same material. In one embodiment of the present invention, the supporting back plate 302 is made of a copper alloy (for example, a chromium copper alloy or a zinc copper alloy), and the target material 304 is made of titanium. In other embodiments of the present invention, the dry material is made of aluminum, light, copper or other base plating materials. The target has a low circular edge 306, with a first diameter 307;-a medium circular edge 308, with a second diameter 309, wherein the second diameter 309 is approximately smaller than the first diameter 307;- The upper circular edge 310 has a third diameter 311, and an extension of the third diameter 311 is larger than the first diameter. In an embodiment of the invention, the first diameter, the second diameter, and the third diameter are approximately 12.554 inches, 12.524 inches, and 12.75 inches, respectively. Viewed from this structure, the lower and middle circular edges constitute a protrusion or a lip on the side wall of the target, which will be described in more detail below. See Figure 3B. The figure shows a schematic cross-section of the sputtering target taken along line A-A in Figure 3A. The thickness 3 i 2 of the target configuration is approximately 0.600 inches. The diameter 314 of the supporting backing plate 3202 is about 1658 inches. Page 12 This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ·· Order ---- -1 fli n Γ— fl— n «Γ ϋ I n It ϋ ϋ« ϋ H «ϋ n ϋ < 512409 A7 B7 V. Description of the invention () The thickness 314 is about 0.33 guess. In other embodiments of the present invention, the dimensions may be different. Figure 3C shows an enlarged view of an area 218 of Figure 2 which is equivalent to area 318 in Figure 3B. The area shows the target side wall 212, the dark area shielding screen 214, and a space 401 between the two. The target side wall 212 includes a lip 402, and the range of the lip 402 is defined by an undercut portion of the side wall 212. The lip 402 includes an inclined bottom edge 404 and a horizontal upper edge 406. A curved tip 408 separates the two from each other. In one embodiment of the present invention, the radius of curvature (&) of the curved tip 408 is not more than about 0.05 inches, and more preferably 0.005 inches. Generally speaking, the radius of curvature of the tip 408 should be smaller to better describe the inclined edge 404 and the horizontal edge 406. However, the radius of curvature must be large enough to prevent bending (curving) at the tip 408. The radius of curvature (R2) of the inclined bottom edge 404 is not greater than about 0.5 inches, and more preferably 0.08 inches. The inclined bottom edge 404 is connected to a turning edge 420, and the turning edge 420 is connected to the bottom surface 210 of the target. The radius of curvature (R3) of the turning edge 420 is not more than about 1 inch, and preferably 0.12 inches. The turning edge 420 forms an angle (Θ) with the bottom surface 210. The © 1 is between about 0 to 90 degrees, more preferably about 5 to 35 degrees, and about 15 degrees is the most. good. In another embodiment of the present invention, the inclined bottom edge 404 is directly connected to the bottom surface 210 and does not have the turning edge 420 between the two. In one embodiment of the present invention, the sidewall of the target further includes a vertical edge 410, a bottom curve 412, an upper curve 414, and an external extension. Page 13 This paper applies the Chinese National Standard (CNS) A4 specification. (210 X 297 male f) (Please read the precautions on the back before filling out this page) # Order --------- Line 丨 ---; Printed by M2409 Α7, Consumer Cooperatives, Bureau of Intellectual Property, Ministry of Economic Affairs Β7 V. Description of the invention (416, wherein the vertical edge 410 is located on the upper edge of the lip 402. The angle (θ2) of the vertical edge is preferably greater than or equal to C degrees, and greater than or equal to It is better to be equal to about 80 degrees, so that the material has better adhesion when it is re-deposited on the vertical edge. When the incident angle of the collision is closer to a right angle, the material that hits the side wall of the target usually has better adhesion. (Ie, it is less likely to become loose and fall), so the problem of particle control becomes less serious. Figure 7 shows a cross-section view of a conventional concrete side wall, where the side wall has a region 702 ^ incident material The region 702 is impacted approximately at an angle of incidence (α), where The angle of incidence is approximately less than a right angle. Therefore, the material cannot adhere tightly to the area 702 ', and may fall onto the substrate due to looseness during the processing of a substrate. See also 胄 3C ® In this embodiment, the vertical edge 410 forms a right angle with respect to the horizontal edge 406 (and relative to the bottom surface 21 of the target). The radius (r) of the bottom curve 412 is approximately 0.008. In other embodiments, it can reach about 0.25 inches. The radius (R5) of the upper curve 414 is about G.G8 leaves, but in other embodiments, it can reach about 0.5 inches. In an embodiment, the height of one of the vertical extensions γ of the lip 402 is between about 0.05 and 0.3 inches, and more preferably about 0.094 inches. The vertical extension refers to the bottom surface of the dry material. The vertical distance from 210 to the tip of the curve 408. In addition, the vertical extension Υ may also be greater than about 〇3 inches. One of the horizontal extensions 詨 of the lip 402 is between about 0.001 to 〇2, 2 It is more preferable to be 0.015 inches, wherein the horizontal extension χ refers to the horizontal distance from the vertical edge 41 to the curve tip 408, Another embodiment of the present invention-page 14 of the National Standard TCNS) A4 specification (210 x 297 mm (please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ---- ---- ^ --------- ^ — 01 .---.------------------- 512409 A7 B7 V. Description of the invention The horizontal extension X is about 0.01 to 0.05 inches. The horizontal extension χ of the lip 402 can use the vertical edge 410 of the shielding portion to reduce the redeposition on the vertical edge 41 °. occur. Therefore, a longer horizontal extension X usually provides a better shielding function. In another embodiment of the present invention, the horizontal distance X is about 0.05 inches and does not exceed the length of the dark area, wherein the length of the dark area in the sputtering chamber is usually about 0.6 pairs. I'll talk about it later. If the horizontal distance X exceeds the length of the dark region, the 'plasma can be excited to form at the dark region 401, which is obviously an undesired event. In order to prevent the above situation, the sputtering chamber should be arranged so that the distance between the dark area shielding screen and the target is smaller than the length of the dark area. The dark area refers to the boundary between a plasma and a solid surface and is related to the Debye length, where the Debye length is the characteristic length of the plasma, and there is an electro-ink drop on this characteristic length. The Debye length is expressed by the following mathematical formula (made by MKS): f Please read the meanings on the back before filling out this page) # ne Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economy where the dielectric constant of free space, κ Is the Boltzmann constant, Te is the electron temperature, η is the plasma density, and e is the charge carried by an electron. The dark area is related to the Debye length and the voltage between the plasma and the solid surface. Although the Debye length is a precisely defined value, the extension of the dark region is not, because the extension of the dark region is still related to the collision length between electrons and neutrons. The estimate of the length or distance of the dark £ at low pressure (< 10 亳 Torr) can be expressed as follows: Page 15 This paper size applies the Chinese National Standard (CNS) A4 specification (210 χ 297 mm) ^- ---------- -nnnn 1 ϋ 512409 A7
五、發明說明（）V. Description of the invention ()
其中V為介於電漿與固態表面間之電壓，且上式中的實 際數值因數（此處為2/3)與公式推導時所做的假設條件 有關。 舉例而言，當該電壓密度為IX lO^cnT3、該電子溫 度為5電子伏特、而該電壓為500伏特時，該Debye長 度（人D)為5X1 (T3cm，而該暗區長度（S。）為〇·11 cm(即 0.044吋）。PVD製程中使用之Debye長度通常約為〇.〇6 吋，與此處所得之長度相當》此外，由於該靶材邊緣之電 漿密度較低，因此在PVD應用中暗區長度變得較大。 請參閱第4A圖。圖中該唇部之上部邊緣406或上部 延伸部係提供於一轉折點450處或一靠近該點450之位 置，而該轉折點450介於於一淨沖蝕區452與一淨再沉積 區454之間。該淨沖蝕區452係指該靶材208 —沖蝕作用 多於沉積作用之區域；該淨沉積區454則指該靶材208之 一沉積作用多於沖蝕作用之區域；而該轉折點450係指該 淨沖蝕區452與該再沉積區454交會處。第4B圖所示為 一傳統靶材之轉折點450的所在位置，其中轉折點450之 所在位置受多種製程參數影響，例如：乾材尺寸、製程參 數（施加之偏壓電源）、濺鍍室尺寸及其它因素等。由於 該濺鍍室内形成之電漿及電場不完全均勻，該轉折點45〇 位置會在該靶材側壁212上改變。本案發明人發現以美商 應用材料所生產之一 SIP TTNtm室，實施8吋晶圓之一特 第16頁 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) # 經濟部智慧財產局員工消費合作社印製 訂--------- 線·，J——.--------------------- A7 B7 五、發明說明（） 疋欽/氮化鈥製程時，靶材側壁周圍2丨2的轉折點450位 置變動值可高達0.19对。 乾材側壁周圍2 1 2之轉折點4 5 0位置通常經由實驗而 決定之。請參閱第4B圖，該實施例將一試驗靶材置入一 賤鍍室中，且以相同製程條件在PVD製程室中加以延長 時間處理。該試驗靶材以具有平坦側壁表面者為佳，使該 乾材側壁之表面型態不影響該轉折點位置^本發明之一些 實施例中’在最初時，處理室壓力、施加至靶材之直流電 源在加以調整或最佳化之後，得以決定出該靶材側壁處之 轉折點位置。通常而言，增加濺鍍室壓力及降低直流電源 供應時’該轉折點位置將會降低。舉例而言，若對該濺鍍 室增至過大的壓力（例如：4毫托耳或更大）時，轉折點 可能會出現在該靶材底表面210處，而不在該側壁212處。 最佳化製程參數後，一或複數片晶圓被送入該濺鍍室 内。當該側壁上之再沉積材料達到數微米厚度時，將該試 驗靶材移出該濺鍍室《在本發明之一鈦濺鍍實施例中，濺 鍍製程需要以2 0瓦特功率進行數小時之處理，以使足量 材料再沉積於該側壁上。接繼將該試驗靶材移出該濺鍍 室，以決定出該靶材側壁周圍處之轉折點位置。本發明之 一實施例中，將該靶材之一部位截去，接繼以一顯微鏡觀 察該輕材剖面，以決定出該靶材之上部表面或底表面與轉 折點間的距離。此後，依據上述實驗所得之轉折點，在另 一靶材之側壁周圍產生一底切部，其中經實驗所得之轉折 點的作為唇部形成的依據，而該底切部或水平之上部邊緣 第17頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 --------t------ ——線—,1·——·ί---- n ϋ n β— 512409 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 406的形成在於或位於不超過該轉折點0.1吋處。接著， 預先決定之轉折點就可用以製備其它靶材。 本發明另一實施例中，將該試驗乾材的二個或更多部 位截去，以決定該轉折點在該靶材側壁周圍各點之位置， 因該轉折點位置會在靶材侧壁上變化。接著，再於另一乾 材周圍形成一底切部，其轉折點則以該會變動的轉折點為 之。另外，底表面210上具均句高度之底切部可設於該靶 材側壁周圍一約轉折點處，並與該靶材底表面處間有一最 小垂直距離，致使低於該底切部的全部區域皆為淨沖蝕 區。 該唇部402之設計得使轉折點在一定範圍内由人工設 定’只要該距離以不超過該實際轉折點距離即可。由於該 唇部402的此種設計特性，一底切部可形成在該轉折點下 方些微距離處。依據上述方式為之時，所需決定之轉折點 只有一個，因為靶材側壁其它部位具有更低位置之轉折點 的可能性，因而將該底切部形成於微低於該轉折點的方式 去除。此外，底切部還可形成於最低轉折點下方些微距離 處’以對製程條件的些許變化提供補償作用，因為該等製 程條件可能改變轉折點位置。本發明一實施例為達到上述 目的，該底切部設於該轉折點下方之〇丨吋的距離内。因 此在另一實施例中，該底切部被設於該轉折點下方0 002 或0.005吋的距離内。 本發明之另一實施例中，採用複數個製程條件以獲得 1¾底切部之最佳位置。亦即，將複數個試驗靶材置入該濺 第18頁 本紙張尺度適用中國國家標準（CNS)_A4規格（210 X 297公釐1---- (請先閱讀背面之注意事項再填寫本頁) > · n ϋ ϋ n n n n J f · n tai n an n n n I el n 1 Mma§ n« n An ^ ammm§ I— n f— ί l n an ϋ «ϋ n ϋ I n alv n 9 512409 A7 B7 五 經濟部智慧財產局員工消費合作社印製 、發明說明（） 鍍室内，將製程條件些許變化之。接著，決定出上述每一 試驗靶材之轉折點，一底切最佳位置即得以選定之。 请向則參閱第4A圖。由圖中可知，由底切部形成之 唇部406能提供該淨沖蝕區與該再沉積區間一明顯的界 線。亦即，在該上部邊緣4〇6上方區域者界定為該淨沉積 區，位於該區域（即：該傾斜邊緣4〇4、轉折邊緣42〇及 底表面2 1 0 )下方者界定為該沖蝕區。該明顯界線可簡化 該淨再沉積區之再組織化步驟。若在該淨沖蝕區與該再沉 積區間並换一明顯界線’這時很難只對該淨再沉積區加以 適當再組織化，因為在該靶材周圍之轉折點位置是會改變 的。通常而T，淨再沉積區加以組織化的目的在於使該淨 再沉積區具有不規則表面，以減少加諸於該沉積材料上之 應力。在一實施例中，淨再沉積區的再組織化係以鋁電弧 熔射（A1 arc spray)方式為之。 此外’該唇部陡稍之突起部份可改善該製程效果之再 現性。濺鍍室中多種元件（例如：該濺鍍室之磁鐵、靶材、 及暗區遮蔽屏）的相關位置會造成該轉折點位置些許偏 離又因這些零件而要疋期置換或修理，因此上述之一或 多個7C件的不當對位或不同對位情形將使製程條件產生些 許不同，這使得轉折點不同，製程效果之再現性亦成問題。 由於具一底切外形之唇部設計，轉折點在某種程度上可由 人為方式加以界定。本案發明人已發現該唇部402之底切 部份可有效界定轉折點之所在位置，即使在該上部邊緣 406與實際轉折點相隔約〇〇ι忖時亦然。因此，該種具 第19頁 (請先閱讀背面之注意事項再填寫本頁) 0 訂------- — ^ιφ« J---.------------ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） 512409 Α7 Β7 五、發明說明（） 有一唇部402之靶材可使該轉折點維持於相同位置，即使 製程條件因元件不當對位或不同對位影響，這種轉折點位 置的一致性得以改善製程效果之再現性。 第3D圖所示為本發明一實施例中上述乾材配置3〇〇 之某些零件的較佳尺寸。這些尺寸皆以吋為標示單位，而 ‘‘ R”代表曲率半徑。舉例而言，“ R0.8”標示者係指上 部曲處之其曲率半徑約為0.08吋。 上述標示之靶材尺寸係以SIP ΤΤΝτΜ濺鍍室之乾材所 設計者’其中該濺鍍室用以處理8吋晶圓，且為美國應用 材料所生產。因此，其它各種適合於PVD濺鍍室或pVD 製程之乾材與上述乾材在尺寸上可能有所不同^熟知該項 技術者應認知採用它種設計並/或它種容積之賤鍍室時， 這些數值將會改變。以一 12吋晶圓用之SIP TTNTM賤鍍 室（美國應用材料所生產）靶材為例，其數值即與第3D圖 者不同，其設置及標示尺寸分別於第5Α圖及第5Β圖中 表示。第5Α圖中所示為一靶材設置5〇〇，其中該靶材設 置500包含一支撐背板502，一起材504固定於該支撐背 板502上，並有一區域506圍繞該乾材侧壁。第5Β圖所 示為該區域506之放大圖，其中標示尺寸係以吋為單位， 而“ R”為該曲率半徑，此與第3D圖中標示者相同。 第6Α圖至第6D圖所示為本發明另一實施例所採用 之把材側壁示意圖。請參閱第6Α圖。圖中一挺材側壁600 包含一唇部602、一凹槽6〇4、一垂直邊緣6〇6、一上部 曲處60 8及一外部延伸部61〇。其中，凹槽6〇4係用以收 第20頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ·# 經濟部智慧財產局員工消費合作社印製 512409 A7 B7 五、發明說明（） 集垂直邊緣、上部曲處及外部延伸部掉下之粒子請再參 閱弟6B圖。圖中一乾材側壁612之一垂直邊緣614的角 度㊀3約大於90度，使材料以較大角度（α )入射，再沉 積材料得更緊密附著於該側壁上。請再參閱第6C圖。圖 中一垂直邊緣618具有一 θ4角，其中該θ4角約小於9〇 度’但約大於45度之，該04角以介於80-90度者為更佳， 且該㊀4角大至足以確保碰撞材料之入射角（α)能大至 足以使在該側壁上之附著性較佳。請再參閱第6D圖。圖 中一側壁620包含一唇部622，該唇部622具有一正斜坡 626之上部邊緣62 4，其中該唇部62 2之一上部邊緣624 的一角度（冷）約不大於60度，並以15度或小於15度者 為更佳。 如第8-9圖所示，該具唇部4〇2之靶材侧壁2〇8，遠 較傳統乾材側壁之粒子控制能力為佳。請參閱第8圖。其 中一圖表800顯示一粒子添加實驗所得之實驗結果，該實 驗所採用靶材係為具有一平坦側壁之傳統靶材，所採用之 濺鍍1：則為8吋晶圓用之SIP ττντΜ濺鍍室。該圖中，χ 軸802為處理之晶圓數量，而γ軸8〇4為經由一特定晶 圓處理後，觀察晶圓所發現的粒子添加量，其中只計入粒 子粒徑約大於0.2微米者。每一晶圓所施加之實驗步驟如 下·（1)鈥沉積，沉積厚度約為32〇埃；（2)氮化鈦沉積， 沉積厚度約約480埃；及（3)活動遮板塗布（shuuer paste)。上逑實驗步驟中，欽沉積過程之製程參數如下所 込對該靶材施加1 8仟瓦特之功率、該濺鍍室壓力維持 第21頁 本紙張尺錢財關家鮮（CNS)A4雜（21() x (請先閱讀背面之注意事項再填寫本頁) 線丨, -I I . 經濟部智慧財產局員工消費合作社印製 512409 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（ 為0.7 #毫把耳、4〇〇瓦特之偏壓電源及賤鍍時間約為μ #鐘’ 5L化钦沉積過程之製程參數如下所述·對該乾材施 加18仟瓦特之功率、該滅鍍室壓力維持約為毫托毫 托耳、2〇〇瓦特之偏壓電源及濺鍍時間約為52秒鐘；活 動遮板塗布〈製程參數如下所述：對該祀材施加Μ什瓦 特之功率、該賤鍵室壓力維持約為〇 7毫托耳、不施加偏 壓電源及濺鍍時間約為6〇秒鐘。 ，請參閱第9圖。其中一圖表9〇〇顯示一粒子添加實驗 所得之實驗結果，該實驗採用之靶材2〇8係具有該唇部 4〇2。圖中，X軸902為經處理之晶圓數，γ軸9〇4為— 特定晶圓處理後，觀察晶圓所發現之粒子添加量，其中只 計入粒徑大於0.2微米者。該實驗之處理步驟及製程參數 與第8圖之實驗相同。 請向前參閱第8圖及第9圖。該圖表8〇〇所示為傳统 靶材經過數百次濺鍍處理後，該粒子添加量增加至超= 50。圖表900所示為本發明一實施例所採用之靶材2⑽^ 過3000次濺鍍處理後只產生8 6(平均值）之粒予恭 與習用技術相比較具有實質上的改善。 上述說明僅為本發明之較佳實施例，本發明之其—。 進一步之實施例皆不偏離發明範圍。本發明之範園冬、 列所附的專利申請範圍為基準。 田 下 第22頁 私紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) (請先閱讀背面之注意事項再填寫本頁) 0------- —訂---------線丨.Where V is the voltage between the plasma and the solid surface, and the actual numerical factor (here 2/3) in the above formula is related to the assumptions made in the formula derivation. For example, when the voltage density is IX lO ^ cnT3, the electron temperature is 5 electron volts, and the voltage is 500 volts, the Debye length (person D) is 5X1 (T3cm, and the dark area length (S). ) Is 0.11 cm (that is, 0.044 inches). The length of Debye used in PVD processes is usually about 0.06 inches, which is equivalent to the length obtained here. In addition, because the plasma density at the edge of the target is low, Therefore, the length of the dark area becomes larger in PVD applications. Please refer to FIG. 4A. The upper edge 406 or the upper extension of the lip is provided at a turning point 450 or a position near the point 450, and the The turning point 450 is between a net erosion area 452 and a net redeposition area 454. The net erosion area 452 refers to the target 208—the area where the erosion effect is greater than the deposition effect; the net deposition area 454 Refers to the area where one of the targets 208 has more deposition than erosion; and the turning point 450 refers to the intersection of the net erosion area 452 and the redeposition area 454. Figure 4B shows the turning point of a conventional target The location of 450, where the location of turning point 450 is affected by various process parameters, for example Such as: dry material size, process parameters (bias power applied), sputtering chamber size, and other factors. Because the plasma and electric field formed in the sputtering chamber are not completely uniform, the turning point 45 ° will be at the target. The side wall 212 is changed. The inventor of this case found that one of the SIP TTNtm chambers produced by American Applied Materials implements one of the 8-inch wafers. Page 16 This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297). (Mm) (Please read the notes on the back before filling out this page) # Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs --------- Line ·, J ——.------- -------------- A7 B7 V. Description of the invention () In the Qin / nitriding process, the change in the 450 position of the turning point 2 2 around the target sidewall can be as high as 0.19 pairs. The position of the turning point 4 50 around the side wall of the material 2 is usually determined by experiments. Please refer to FIG. 4B. In this embodiment, a test target is placed in a base plating chamber, and the PVD process chamber is used under the same process conditions. The test target is preferably one having a flat side wall surface, so that the surface of the dry material side wall is better. The shape of the surface does not affect the position of the turning point. ^ In some embodiments of the present invention, 'in the beginning, the pressure in the processing chamber and the DC power applied to the target were adjusted or optimized to determine the position at the side wall of the target. Turning point position. Generally speaking, when increasing the sputtering chamber pressure and reducing the DC power supply, the turning point position will be lowered. For example, if the sputtering chamber is increased to excessive pressure (for example: 4 millitorr or more Large), the turning point may appear at the bottom surface 210 of the target, but not at the side wall 212. After optimizing the process parameters, one or more wafers are sent into the sputtering chamber. When the re-deposited material on the side wall reaches a thickness of several micrometers, the test target is removed from the sputtering chamber. "In one embodiment of the titanium sputtering of the present invention, the sputtering process requires 20 watts of power for several hours. Processed to allow sufficient material to be re-deposited on the sidewall. The test target is then removed from the sputtering chamber to determine the position of the turning point around the side wall of the target. In one embodiment of the present invention, a portion of the target is cut off, and then a cross section of the light material is observed with a microscope to determine a distance between an upper surface or a bottom surface of the target and a turning point. Thereafter, according to the turning point obtained in the above experiment, an undercut is generated around the side wall of the other target. The turning point obtained through the experiment serves as the basis for the formation of the lip, and the undercut or the upper edge of the page This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 male f) (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -------- t ------ ——line—, 1 · —— · ί ---- n ϋ n β- 512409 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () The formation of 406 is Or be located no more than 0.1 inches from the turning point. Then, a predetermined turning point can be used to prepare other targets. In another embodiment of the present invention, two or more parts of the test dry material are truncated to determine the position of the turning point at each point around the side wall of the target, because the position of the turning point will change on the side wall of the target. . Then, an undercut is formed around the other dry material, and the turning point is the turning point that changes. In addition, an undercut portion with a uniform sentence height on the bottom surface 210 may be provided at a turning point around the side wall of the target and a minimum vertical distance from the bottom surface of the target, so that all of the undercut portions are lower than The areas are all net erosion areas. The design of the lip 402 is such that the turning point is manually set within a certain range, as long as the distance does not exceed the actual turning point distance. Due to this design feature of the lip 402, an undercut can be formed at a slight distance below the turning point. According to the above method, there is only one turning point that needs to be determined. Because other parts of the target side wall have the possibility of a lower turning point, the undercut is formed in a way slightly lower than the turning point. In addition, the undercut can be formed a little distance below the lowest turning point to provide compensation for slight changes in process conditions, as these process conditions may change the position of the turning point. According to an embodiment of the present invention, the undercut portion is disposed within a distance of 0 inches below the turning point. Therefore, in another embodiment, the undercut portion is disposed within a distance of 0 002 or 0.005 inches below the turning point. In another embodiment of the present invention, a plurality of process conditions are adopted to obtain the optimal position of the undercut portion. That is, put a number of test targets into the splash. Page 18 This paper size applies Chinese National Standard (CNS) _A4 specifications (210 X 297 mm 1 ---- (Please read the precautions on the back before filling in this Page) > · n ϋ ϋ nnnn J f Printed and invented by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (5) The plating room will be slightly changed. Then, the turning point of each of the above test targets is determined, and the optimal location of the undercut can be selected. Please refer to FIG. 4A. It can be seen from the figure that the lip 406 formed by the undercut portion can provide a clear boundary between the net erosion area and the redeposition area. That is, above the upper edge 406 The area is defined as the net deposition area, and the area below the area (ie, the inclined edge 404, the turning edge 42 and the bottom surface 210) is defined as the erosion area. The clear boundary can simplify the net The reorganization step of the deposition area. If the net erosion area and the An obvious boundary is that it is difficult to properly reorganize only the net redeposition area, because the position of the turning point around the target will change. Usually, the purpose of organizing the net redeposition area is to make the The net re-deposition area has an irregular surface to reduce the stress imposed on the deposition material. In one embodiment, the re-organization of the net re-deposition area is performed by an Al arc spray method. In addition, the sharp protrusion of the lip can improve the reproducibility of the process effect. The relative positions of various components in the sputtering chamber (such as the magnets, targets, and dark shielding screens in the sputtering chamber) will cause The position of the turning point is slightly deviated and it is necessary to replace or repair it due to these parts. Therefore, improper alignment or different alignment situations of one or more of the above 7C parts will make the process conditions slightly different, which makes the turning points different and the processing effect. The reproducibility is also a problem. Due to the design of the lip with an undercut shape, the turning point can be manually defined to some extent. The inventor of this case has found that the undercut of the lip 402 Can effectively define the location of the turning point, even when the upper edge 406 is about 〇ι〇 from the actual turning point. Therefore, this kind of page 19 (please read the precautions on the back before filling this page) 0 Order ------- — ^ ιφ «J ---.------------ This paper size applies to China National Standard (CNS) A4 (210 X 297 meals) 512409 Α7 Β7 5. Description of the invention () A target with a lip 402 can keep the turning point at the same position, even if the process conditions are affected by improper alignment of components or different alignment, the consistency of the position of this turning point can improve the reproduction of the process effect Sex. Figure 3D shows the preferred dimensions of some parts of the dry material configuration 300 described above in an embodiment of the present invention. These dimensions are in inches, and "R" represents the radius of curvature. For example, "R0.8" indicates that the radius of curvature at the upper curve is about 0.08 inches. The target size indicated above is Designers of dry materials in the SIP ΤΤΝτΜ sputtering chamber 'The sputtering chamber is used to process 8-inch wafers and is produced by American Applied Materials. Therefore, various other dry materials suitable for PVD sputtering chamber or pVD process Dimensions may be different from the dry materials mentioned above ^ Those familiar with the technology should recognize that these values will change when using a base plating chamber of other design and / or volume. SIP for a 12-inch wafer As an example, the target of the TTNTM base plating chamber (produced by American Applied Materials) is different from that shown in Figure 3D, and its settings and marked dimensions are shown in Figures 5A and 5B. Figure 5A shows A target material 500 is provided, wherein the target material 500 includes a support back plate 502, a material 504 is fixed on the support back plate 502, and an area 506 surrounds the side wall of the dry material. Figure 5B shows An enlarged view of the area 506, in which the marked dimensions are Is the unit, and "R" is the radius of curvature, which is the same as the one marked in Figure 3D. Figures 6A to 6D are schematic diagrams of the sidewall of the handle used in another embodiment of the present invention. Please refer to Figure 6A In the figure, a side wall 600 of a member includes a lip 602, a groove 604, a vertical edge 606, an upper curved portion 608, and an external extension 61. Among them, the groove 604 It is used to receive page 20. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the precautions on the back before filling this page). System 512409 A7 B7 V. Description of the invention () Set the particles falling from the vertical edge, the upper curve and the external extension. So that the material is incident at a larger angle (α), and then the deposited material is more closely attached to the side wall. Please refer to FIG. 6C again. A vertical edge 618 in the figure has a θ4 angle, wherein the θ4 angle is less than about 90. Degrees' but greater than about 45 degrees, the 04 angle is between 80-90 degrees It is better, and the ㊀4 angle is large enough to ensure that the incident angle (α) of the collision material is large enough to make the adhesion on the side wall better. Please refer to FIG. 6D again. A side wall 620 in the figure includes a lip Part 622, the lip 622 has a positive slope 626 above the upper edge 624, wherein an angle (cold) of an upper edge 624 of one of the lip 62 2 is not more than 60 degrees, and at 15 degrees or less As shown in Figures 8-9, the target side wall 208 with the lip portion 40 is far better than the traditional particle control capability of the dry side wall. Please refer to Figure 8. One of them Graph 800 shows the experimental results obtained from a particle addition experiment. The target used in this experiment is a traditional target with a flat side wall. The sputtering used is 1: SIP ττντM sputtering chamber for 8-inch wafers. In the figure, the χ-axis 802 is the number of wafers processed, and the γ-axis 804 is the amount of particles found after observing the wafer after processing through a specific wafer, and only the particle size greater than 0.2 microns is included in the calculation. By. The experimental steps applied to each wafer are as follows: (1) 'deposition with a deposition thickness of about 32 Angstroms; (2) titanium nitride deposition with a deposition thickness of about 480 Angstroms; and (3) movable shutter coating (shuuer paste). In the above experimental steps, the process parameters of the Chin deposition process are as follows: A power of 18 watts is applied to the target, and the pressure of the sputtering chamber is maintained on page 21 of this paper rule. () x (Please read the notes on the back before filling out this page) Line 丨, -II. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 512409 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 0.7 # milli-ear, 400W bias power and low plating time are about μ # minutes. The process parameters of the 5L Huaqin deposition process are as follows. Applying 18 仟 W power to the dry material, the quench plating The pressure of the chamber is maintained at about millitorr to millitorr, the bias power of 200 watts and the sputtering time are about 52 seconds; the movable shutter coating process parameters are as follows: the power of Msh is applied to the target material The pressure of the base key chamber is maintained at about 0.7 millitorr, the bias power is not applied, and the sputtering time is about 60 seconds. Please refer to FIG. 9. One of the graphs 900 shows a particle addition experiment. The result of the experiment. The target material 208 used in this experiment The lip portion is 4.02. In the figure, the X-axis 902 is the number of wafers processed, and the γ-axis 904 is — After a specific wafer is processed, observe the amount of particles found on the wafer, and only the particles are counted. The diameter is greater than 0.2 microns. The processing steps and process parameters of this experiment are the same as the experiment of Figure 8. Please refer to Figure 8 and Figure 9 forward. The chart 800 shows that the traditional target material has been subjected to hundreds of splashes. After the plating process, the amount of particles added increased to over 50. The graph 900 shows the target material 2 used in an example of the present invention. After 3000 sputtering processes, only 8 6 (average) particles were produced. Compared with the conventional technology, it has a substantial improvement. The above description is only a preferred embodiment of the present invention, and other aspects of the present invention. The further embodiments do not deviate from the scope of the invention. The scope of patent application is the benchmark. Tanaka page 22 The private paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male f) (Please read the precautions on the back before filling this page) 0 ------ --Order --------- line 丨.