TW512405B - Dryer - Google Patents

Abstract

This invention provides a dryer located on top of a wet reaction chamber, which consists of: a reaction chamber shield, a separation plate with a plural number of holes, a barrier plate and a guide tube, in which the separation plate is located in the reaction chamber shield to partition the reaction chamber shield into an upper portion and a lower portion; the barrier plate is made from an electrically conductive material, and is located in the lower portion of the reaction chamber shield and is in a grounded state; and the guide tube is used to introduce gases with high volatility to the upper portion of the reaction chamber shield, which flows towards the lower portion of through holes of the separation plate. Moreover, the reaction chamber shield, the separation plate, even the chamber wall of the wet reaction chamber and its parts such as the reaction tank inside of the chamber can be all made from electrically conductive materials and can be all in the grounded state. Or, an electrostatic eliminator can be installed on top of the dryer to neutralize electrostatic charges of the whole wet treatment platform containing the dryer and the neutralization effectiveness of the electrostatic charges can be enhanced by cooperating with the ground treatment of the above-mentioned parts.

Description

512405 V. Description of the invention (1) [Field of the invention] The present invention relates to a drying device (d Γ ye ^), and in particular to an improved wet bench drying device, which can avoid electrostatic charges. Accumulation. [Learning technology]

Wafer cleaning is a fairly common process in IC manufacturing processes. Wet chemical cleaning is its main technology. Pre-diffusion clean is an indispensable step in the IC manufacturing process. After each cleaning step ', a dryer is needed to dry the wafer to facilitate the next step. However, since the drying device of the wet processing machine is prone to accumulate electrostatic charges, during the wafer drying step, the accumulated charges will attack the surface of the silicon wafer and cause silicon defects (siHcon pitting). [Objective and Summary of the Invention] In view of this, an object of the present invention is to provide a drying device for a wet processing machine that can avoid charge accumulation. In addition, the present invention also provides a wet processing machine 'including a drying device, which can eliminate electrostatic charges. Therefore, the object of the present invention is good. The present invention provides an upper part of a drying chamber, which includes a reaction chamber tube. The partition is located in the reaction chamber, covering the reaction chamber. The cover is divided into an upper part and a material, and it is located in the reaction chamber. The duct is used to introduce a high-volume method for the above-mentioned conventional techniques. This drying device is located in the wet type. There are many holes in the reaction cover, baffle, baffle and guide, and the lower part; the baffle consists of the lower part of the shield that can conduct charge and is in the form of ground-like hair gas to the cover of the reaction chamber.

512405

The hole of the partition is invented as a better part, and the charge-conducting wall and the reaction tank are used to conduct charge via the material set according to this material. In order to place the present invention above the stage, the present invention includes: a wet type and generally located including: a baffle of a reaction chamber, a highly volatile gas, other materials, etc., may be made of materials such as a static electricity eliminator and a reaction The cover on the chamber and the drying device flows from the cover of the reaction chamber to the reaction chamber and flows downward. In the embodiment, in addition to the obstacles such as the cover of the reaction chamber, and even the wet processor, the material that conducts the charge is neutralized by stainless steel, quartz, and special electric charges, which can eliminate the electrostatic charge on the static eliminator above the wet reaction chamber. In the cover of the reaction chamber, the barrier plate at the lower part of the cover is replaced by the conductive plate or the partition plate by the wet-type reaction chamber that can conduct the charge. The above-mentioned special glass and special plastics can also be used in dryers, wet processing machines, drying devices, in which the drying device package has many holes, and for introducing

According to a preferred embodiment of the present invention, the wet reaction chamber further includes a reaction chamber wall and a reaction tank located in the reaction chamber wall, and the reaction chamber wall, the reaction tank, and a reaction chamber cover, a partition and a blocking device of the drying device. The baffle is composed of the material of "Bai Chuan Street" and is designed to be grounded. The materials of the above-mentioned conductive materials include non-recorded steel, quartz, special glass, and special plastic. '

In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings to make a detailed description as follows: [Simplified description of the drawings]

〇 503-5831TWF-ptd Page 8 V. Description of the invention (3) Figure 1 is a sectional view of a wet processing machine according to the first aspect of the present invention. A Drying Device Included in Jiaguan Example. Figure 2 is a top view of the drying device set in Figure 3 and Figure 3).日 不 第 1 图 的 乾 擗 # [Symbol Description] A side view of the L exhibition device. Reaction tank: 2 2 Reaction chamber wall: 2 4 9-sheet holder: 30 Wafers: 32 Static reducer 丄 4 1 Metal sheet: 50 Drying device: 1 〇 Cover of reaction chamber: i 2 Horizontal partition: 1 4 Vertical baffle: j 6 Duct: 18 Exhaust pipe: 19 Wet reaction chamber: 2 〇 [Example] Figure 1 is a cross-sectional view of a person of the present invention, and Figure 2 is the third of Figure i \ The horizontal partition 14 of the wet processing machine of the drying device: divided into 5: the reaction chamber cover 12, the flat partition 14 has many holes, 5, the guide 18, and the exhaust pipe 19, where the water will The reaction chamber cover 12 is divided into upper ridges: it has been placed inside the reaction chamber cover 12 'below and below the reaction chamber cover 12; the vertical barrier plate "is located in the material and is grounded. The straight plate 16 is made of The conductive charge is selectively grounded, and the duct j 8 emits a burst of gas to the reaction chamber. It is used to enter the south, and is the same as the technical department, and passes through the horizontal partition. Hole / door 15 and down. [^ Moves to take away the wafer holder 30

512405 Five 'Explanation (4) (isopropyl aichol; IPA). The drying device 10 is located above the wet-type reaction chamber 20 and is movable to allow the wafer holder 30 to enter and exit the reaction tank 22 conveniently. In addition to the vertical barrier plate 16 composed of a material that can conduct charge, the material of the rest of the drying device 10 (the reaction chamber cover 12 and the horizontal partition 14) can be changed to a material that can conduct charge, and It is also in a ground-like state to neutralize the electrostatic charge and prevent the electrostatic charge from causing damage to the wafer. The above-mentioned materials that can conduct charge are, for example, stainless steel, quartz, special glass, special plastic, or other similar materials.

A static eliminator 40 is further installed above the drying device 10 to further eliminate the generated electric charge. The materials that can conduct the electric charge, such as the tank 2 2, the wall of the wet reaction chamber 24, etc., and remove the electrostatic charge. In addition, the material of the anti-other components of the wet reaction chamber 20 can also be changed to make the king grounded and sad, to place the excess wafer 32 in the grounded state. In the above-mentioned grounding process, the material of is in contact, while the other end is in contact with the grounding substance, it will usually contact 50 here to enhance the ability to conduct charge. A metal is added to the inner side of the wire and the component that can conduct the electric charge.

The electric eliminator 40 has the function of lightening +. Therefore, the present invention can also remove the static electricity i ^^ from the drying device 10 to 4, and the electric eliminator 40 to eliminate static electricity. Charge and shoulders [Characteristics and effects of the invention] In summary, the present invention has at least one ancient π Μ Μ ^ liter has the following advantages ··

0503-5831TWF-? Id Page 10 512405

V. Description of the invention (5) 1 · Most of the components of the drying device above the wet reaction chamber of the present invention are made of a material that can conduct charge, which is used to neutralize the electrostatic charge, so that the electrostatic charge can avoid damage to the wafer. . 2. In order to further neutralize the electrostatic charge generated by the drying device above the wet-type reaction chamber, in addition to using a material capable of conducting charge in the drying device < most of the components of the invention, a static elimination is added 22 · 3. In addition to designing the drying device above the wet reaction chamber as # 接 ^ 也. In addition, the reaction chamber walls, reaction tanks and other components of the wet reaction chamber,

It is designed to be grounded to neutralize electrostatic charges and expose the wafer to electrostatic charges. If a static eliminator is installed, the second step ensures that the wafer is protected from electrostatic charges. 4 · The present invention can neutralize electrostatic charges and charge attacks only on the static eliminator above the wet reaction chamber. A drying device is provided to prevent the wafer from receiving electricity. Although the present invention has been limited to the present invention by a preferred embodiment, any Asian or African use is within the scope and scope of the present invention. The application attached after the event does not deviate from the essence of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope of the stated patent.

Claims (1)

-Room No. Qfil 0581fi Application for patent scope 9 丨 Month 丨 丨 s_Amendment: This kind of drying device is located above the wet-type reaction chamber. It is suitable for drying process after washing tablets. The drying device includes: a reaction chamber cover; a partition plate is located in the reaction chamber cover; the reaction room cover is divided into a dead part and a lower part; the partition plate has a plurality of holes; a plurality of barrier plates are located in the reaction chamber Below the cover, the barriers are composed of a material that can transmit and charge, and the barrier plates are grounded; and the upper director is used to introduce a highly volatile gas to the cover 4 of the reaction chamber. And flow through the holes of the partition plate to the lower part. 2. The device according to item 丨 in the scope of the patent application, wherein the reaction chamber is composed of a material that can conduct electric charges. 3. The device according to item 2 of the scope of patent application, wherein the material of the reaction chamber feet is selected from the group consisting of stainless steel, quartz, special glass, and special plastic. 4 # The device according to item i of the scope of patent application, wherein the partition is composed of a material capable of transmitting V charges. 5. The device according to item 4 of the scope of patent application, wherein the material of the barrier plates is selected from the group consisting of stainless steel, quartz, special glass, and special features. Xi n 6. The device according to item 1 of the scope of patent application, wherein the material of the resistive plates is selected from the group consisting of stainless steel, quartz, special glass, and special plastic. Xi The device according to item 1 of the scope of patent application, further comprising an electrostatic placed above the drying device. A wet processing machine capable of eliminating static charges, including: Amy.ptc Page 12 0503-5831TW1; TSMC2000-0382; M2405 Case No. 9010581ft 6. Patent application scope-Wet reaction chamber; includes a drying device 'located in §Hai wet reaction to the top' where the drying will last you to the cover, from It is composed of the material of the conductive charge of Fu; The object eight is located inside the cover of the reaction chamber 1 The cover of the reaction chamber is made of: 部: 部 '1 xuan partition has a plurality of holes, where the partition is made of a material that conducts electricity A plurality of barrier plates are located under the covering of the reaction chamber, and the barrier plates are composed of a material that can conduct charge, and the barrier plates are connected with a seedling-conduit for introducing a high volatility The gas reaches the upper part of the cover of the reaction chamber and flows to the lower part through the holes of the partition plate; and a static eliminator is located approximately above the drying device. 9) The wet processing machine capable of eliminating static charges as described in item 8 of the scope of patent application, wherein the wet reaction chamber further includes a reaction chamber wall and a reaction tank located in the reaction chamber wall, and the reaction chamber The wall, the reaction tank, and the drying device are grounded. 10. The electrostatic treatment-removable wet processing machine as described in item 9 of the scope of patent application, wherein the reaction chamber cover of the drying device, the partition plate and the barrier plates, and the reaction chamber wall and The reaction tank is composed of a material that can conduct electric charges. Π. The wet processing machine capable of eliminating electrostatic charges as described in Item 10 of the scope of patent application, wherein the material that can conduct the electric charge is selected from the group consisting of stainless steel, quartz, special glass, and special plastic. 0503-5831TW1; TSMC2000-0382; Amy.ptc Page 13