TW508593B - Delay locked loop for use in synchronous dynamic random access memory - Google Patents
Delay locked loop for use in synchronous dynamic random access memory Download PDFInfo
- Publication number
- TW508593B TW508593B TW089127733A TW89127733A TW508593B TW 508593 B TW508593 B TW 508593B TW 089127733 A TW089127733 A TW 089127733A TW 89127733 A TW89127733 A TW 89127733A TW 508593 B TW508593 B TW 508593B
- Authority
- TW
- Taiwan
- Prior art keywords
- signal
- delay
- delayed
- clock signal
- response
- Prior art date
Links
- 230000001360 synchronised effect Effects 0.000 title claims abstract description 9
- 230000004044 response Effects 0.000 claims abstract description 61
- 230000003111 delayed effect Effects 0.000 claims abstract description 53
- 238000005259 measurement Methods 0.000 claims description 40
- 230000010355 oscillation Effects 0.000 claims description 26
- 230000005540 biological transmission Effects 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 238000006073 displacement reaction Methods 0.000 claims description 9
- 230000000630 rising effect Effects 0.000 claims description 8
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 abstract description 3
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 15
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 15
- 238000010586 diagram Methods 0.000 description 15
- 230000001934 delay Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 2
- 206010011469 Crying Diseases 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
- H03L7/0995—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator comprising a ring oscillator
- H03L7/0997—Controlling the number of delay elements connected in series in the ring oscillator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/081—Details of the phase-locked loop provided with an additional controlled phase shifter
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/106—Data output latches
Landscapes
- Dram (AREA)
- Pulse Circuits (AREA)
Abstract
Description
五、發明說明(1) I明堡 本發明係與一種半導體積體電路有關;更具體地說,係 與一種用於同步動態隨機存取記憶體中的延遲鎖定迴路 (dll)有關,其能夠獲得一快速的鎖定時間以及減少的海 動。 先前技藝說明 為實現半導體記憶體装置中的高速操作,已發展了同步 酼機存取記憶體(SDRAM) 4DRAM與一外部時鐘訊號同步操 ,。SDRAM包括一單一資料速率(Sdr)sdram , 一 速 率(DDR)SDRAM,以及類似者。 i 一 2來說,當資料與外部時鐘訊號同步輸出時,外部時 、里汛號以及輸出資料之間的偏斜會發生。在_ΑΜ中,可 =一;;鎖定迴路(DLL)來補償外部時鐘訊號以及輸出 間的偏斜。 吁鐘訊唬以及内部時鐘訊號之 -數位DLL是以多個單位延遲元件實現的 聯轾合 Ϊ:起=加分辨度,單位延遲時間應最小化。缺而, m合需要更多單位延遲元件。因而,— 力率/為耗乂及日日片尺寸會增加报多。 發明總結 因此,本發明之目的為提供一 得-快速的鎖定時間及減少的跳動。'疋迴路’其能夠獲 根據本發明之一觀點,提供Ύ 一 存取記憶體中的偏斜之延遲鎖:::以補償同步動態隨機 夂遲鎖疋迴路,其包含:一用以藉V. Description of the invention (1) I. The invention relates to a semiconductor integrated circuit; more specifically, it relates to a delay-locked loop (DLL) used in synchronous dynamic random access memory, which can Obtain a fast lock time and reduced sea movement. Prior art description In order to achieve high-speed operation in semiconductor memory devices, synchronous memory access memory (SDRAM) 4DRAM has been developed to operate in synchronization with an external clock signal. SDRAM includes a single data rate (Sdr) sdram, a high speed (DDR) SDRAM, and the like. For i-2, when the data is output synchronously with the external clock signal, the skew between the external time, the Lixun number and the output data will occur. In _ΑΜ, it can be = one; lock loop (DLL) to compensate for the skew between the external clock signal and the output. The bell clock signal and the internal clock signal-the digital DLL is a combination of multiple unit delay elements to achieve: from = to increase the resolution, the unit delay time should be minimized. By the way, m-units require more unit delay elements. Therefore, — the power rate / the consumption rate and the size of the daily film will increase. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a gain-fast lock time and reduced jitter. According to an aspect of the present invention, it can provide a delay lock for accessing skew in memory :: to compensate synchronous dynamic random delay lock loop, which includes:
$ 5頁 508593 五、發明說明(2) 由偏斜延遲一外部時鐘訊號之延遲模型以產生一延遲的時 鐘汛號,訊號產生裝置,以回應該外部時鐘訊號以及該 延遲的時鐘訊號,以產生控制訊號;一第一延遲裝置,以 回應該控制訊號,來延遲該延遲的控制訊號以產生一第一 延遲鎖^迴路(DLL)時鐘訊號,其中該第一延遲裝置具有 口大的單位延遲;以及一第二延遲裝置,以回應該控制訊 ,丄來延遲該第—延遲鎖定迴路(DLL)時鐘訊號以產生一 第二延遲鎖定迴路(DLL)時鐘訊號,其中該第二延遲裝置 具有一小單位延遲。 圖式簡述 考附圖而變得明顯 圖1為一時序圖 圖2為一方塊圖 圖3為一電路圖 圖4為一電路圖 圖5為一電路圖 圖6為一電路圖 本發明之其他目的和觀點將藉由下列實施例之說明並參 ,其中: 用以說明DLL之原理; 說明根據本發明之dll ; 說明一顯示於圖2中的第一延遲單元; 說明一顯示於圖3中之暫存器; _ 說明一顯示於圖2中之第二延遲單元; 說明一顯示於圖5中之旗桿暫在哭· 圖7和8說明1示於圖3中之第^遲單元之時子序圖,· 圖:至1、1說明顯示於圖5中之第二延遲單元之時序圖',, 圖1 2說明根據本發明之DLL·的整個時序圖。 , iLil實施例細說明 圖1為-時序圖,用以說明DLL之原理。在此, 外部時鐘訊號CLK之時間週期。 ck$ 5 页 508593 V. Description of the invention (2) Delay a delay model of an external clock signal to generate a delayed clock signal, a signal generating device in response to the external clock signal and the delayed clock signal to generate A control signal; a first delay device that delays the delayed control signal in response to the control signal to generate a first delay lock loop (DLL) clock signal, wherein the first delay device has a large unit delay; And a second delay device, in response to the control signal, to delay the first delay-locked loop (DLL) clock signal to generate a second delay-locked loop (DLL) clock signal, wherein the second delay device has a small Unit delay. The drawings are briefly described with reference to the drawings. FIG. 1 is a timing chart. FIG. 2 is a block diagram. FIG. 3 is a circuit diagram. FIG. 4 is a circuit diagram. FIG. 5 is a circuit diagram. The following examples will be used for reference, in which: to explain the principle of the DLL; to explain the DLL according to the present invention; to explain a first delay unit shown in FIG. 2; to explain a temporary storage shown in FIG. 3. _ Illustrate a second delay unit shown in FIG. 2; Illustrate a flagpole shown in FIG. 5 is crying temporarily; Figures 7 and 8 explain 1 when the ^ late unit shown in FIG. 3 is a sub-sequence diagram Figures: 1 to 1 illustrate the timing diagrams of the second delay unit shown in Figure 5 ', and Figure 12 illustrates the overall timing diagram of the DLL according to the present invention. Detailed description of the iLil embodiment Figure 1 is a timing diagram to explain the principle of the DLL. Here, the time period of the external clock signal CLK. ck
第6頁 五、發明說明(3) 如所顯示的,卷 ^ 時,會造成—在二2與α外部時鐘訊號CLK同步輸出 的偏斜tdl。偏斜t蕻: ?CLK以及-輸出資料Dout之間 tdl之内部時鐘訊心:=外部時鐘訊號該偏斜 DLL一CLK藉由將外'在此時、,内部時鐘訊號 先決定的時間t而雈^里枭號CLK延遲一根據(tk-tdl )所預 DLL時鐘訊號。因而仔。此内部時鐘訊號DLL —CLK稱為一 出資料D盥外邱蛀,右貧料與DLL時鐘訊號同步,則一輸 貝十0ut,、外部時鐘訊號CLK同步。 ^為^方塊圖,說明一根據本發明之DLL。 ? 27〇。 第一延遲早兀2 60以及一第二延遲單元 ▲延遲模型210將一外部時鐘訊號CLK延遲一介於外部時鐘 舌it號CLK以及 '—輪屮咨也L + Μ AA M n 、,^: _ ffi貝科之間的偏斜tdl以產生一延遲過的 時鐘訊號CLK_D。 訊號產生單元220包括一控制單元230,一電壓控制振盪 器(VCO)240 以及一鏡vc〇 25〇。Page 6 V. Description of the invention (3) As shown, when the ^ is scrolled, the skew tdl of the synchronous output with the external clock signal CLK α at 2 2 will be caused. Skew t 蕻: internal clock signal tdl between? CLK and -output data Dout: = external clock signal The skew DLL-CLK is determined by the time t at which the internal clock signal first determines The clock signal CLK is delayed by a predetermined DLL clock signal according to (tk-tdl). Therefore Tsai. This internal clock signal DLL —CLK is called a data source D. The external clock signal is synchronized with the DLL clock signal, and once the input signal is 10 ut, the external clock signal CLK is synchronized. ^ Is a ^ block diagram illustrating a DLL according to the present invention. 270. The first delay early 60 and a second delay unit ▲ The delay model 210 delays an external clock signal CLK by a number between the external clock tongue it and CLK and '-屮 也 也 L + Μ AA M n, ^: _ Deflection tdl between ffi Beco to generate a delayed clock signal CLK_D. The signal generating unit 220 includes a control unit 230, a voltage-controlled oscillator (VCO) 240, and a mirror vc0 25.
控制單元230接收外部時鐘訊號CLK以及延遲過的時鐘訊 號CLK — D以產生控制訊號。控制訊號包括一控制時鐘訊號 CLK2,一延遲過的控制訊號/CLK_D2,一回應訊號 /REPLICA以及一回應致能訊號rep_EN。 在此,將控制時鐘訊號CLK2致能至一高位,從外部時鐘 訊號CLK之第一上升邊緣至第二上升邊緣,如此使得控制 時鐘訊號CLK2具有一二位於外部時鐘訊號CLK之時間週The control unit 230 receives the external clock signal CLK and the delayed clock signals CLK-D to generate a control signal. The control signals include a control clock signal CLK2, a delayed control signal / CLK_D2, a response signal / REPLICA, and a response enable signal rep_EN. Here, the control clock signal CLK2 is enabled to a high level, from the first rising edge to the second rising edge of the external clock signal CLK, so that the control clock signal CLK2 has one or two time periods located on the external clock signal CLK.
508593 五、發明說明(4) 期。將延遲過的控制訊號/CLK_D2致能至一低位,從延遲 過的時鐘訊號CLK 一 D之第一上升邊緣至第二上升邊緣,如-此使得延遲過的控制訊號/CLK — D2具有一二倍於延遲過的 時鐘訊號CLK_D之時間週期。 回應致能訊號REP-EN被用來啟動鏡VC0 250,且回應訊 號/REPLICA為一用來扣住一回應振盪器訊號R_〇Sc之控制 訊號。 VCO 240執行一振盪操作以產生一測量振盪訊號i〇sc g 回應控制時鐘訊號CLK2以延遲過的控制訊號/CLK—D2。測… 量振盪訊號M-OSC被扣住,同時控制時鐘訊號CLK2以及延 遲過的控制訊號/CLK_D2被致能。 鏡VCO 250執行一振盪操作以產生一回應振盪訊號R_〇sc 以對回應訊號/REPLICA以及回應致能訊號/REp_EN做出反 應。回應振盈訊號R一OSC被扣住,同時回應訊號/REpLICA 以及回應致能訊號REP-EN被致能。 第一延遲單元260,其具有一大的單位延遲,大致地將 外部時鐘訊號CLK延遲以回應控制訊號並產生一第一DLL時 鐘訊號DLL一CLK1。第一延遲單元26〇亦包括一第一延遲測一 篁單元261以及一第一延遲回應單元m2。 第二延遲單元270,其具有一小單位延遲,精細地將第 一DLL時鐘訊號DLL_CLK1加以延遲以回應控制訊號並產生 一第一DLL %鐘訊號DLL—CLK 2。第二延遲單元27〇亦包括一 第二延遲測量單元271以及一第二延遲回應單元272。 圖3為一電路圖,說明顯示於圖2中之第一延遲單元508593 V. Description of the invention (4) period. Enable the delayed control signal / CLK_D2 to a low level, from the first rising edge to the second rising edge of the delayed clock signal CLK-D, such as-this makes the delayed control signal / CLK-D2 have one or two Time period that is twice the delayed clock signal CLK_D. The response enable signal REP-EN is used to activate the mirror VC0 250, and the response signal / REPLICA is a control signal used to hold a response oscillator signal R_〇Sc. The VCO 240 performs an oscillating operation to generate a measurement oscillating signal iosg in response to the control clock signal CLK2 to delay the control signal / CLK_D2. Measure ... The oscillating signal M-OSC is blocked, and the control clock signal CLK2 and the delayed control signal / CLK_D2 are enabled. The mirror VCO 250 performs an oscillating operation to generate a response oscillating signal R_sc to respond to the response signal / REPLICA and the response enable signal / REp_EN. In response to the Zhenying signal R-OSC was detained, at the same time the response signal / REpLICA and the response enable signal REP-EN were enabled. The first delay unit 260 has a large unit delay, and generally delays the external clock signal CLK in response to the control signal and generates a first DLL clock signal DLL_CLK1. The first delay unit 260 also includes a first delay measurement unit 261 and a first delay response unit m2. The second delay unit 270 has a small unit delay, and finely delays the first DLL clock signal DLL_CLK1 in response to the control signal and generates a first DLL% clock signal DLL_CLK2. The second delay unit 270 also includes a second delay measurement unit 271 and a second delay response unit 272. FIG. 3 is a circuit diagram illustrating the first delay unit shown in FIG. 2
508593 五、發明說明(5) 260 ° 參考圖3,第一延遲測量單元261將延遲過的控制訊號一 /CLK—D2之低位加以位移至測量節點N31至N35以回應測量 振盪訊,M-0SC。然後,暫存器331至335在控制時鐘訊號 CLK2為高位之同時儲存測量節點N31至N35之位移過的低位 準、。儲存於暫存器331至335中位移過的低位被輸出至第一 延遲回應單元262以回應控制時鐘訊號CLK2以及一位 制訊號SHIFT。 工 在第延遲,則量單元2 6 1中,多個第一轉換控制單元3j 至315將延遲過的控制訊號/CLK_D2之低位轉換至節點 至N35以回應測量振盪訊號M_〇sc。 為回應延遲過的控制訊號/CLK—D2之邏輯組合的訊號以 及測量節點N31至N35上的電壓大小,多個第二轉換控制單 7L321至324將測量節點N31至N35之低位分別轉換至 換控制單元311至315。 暫存器331至335儲存了測量節點N3 !至N35之低位以回應 延遲過的控制訊號/CLK-D2以及位移控制訊號shift。〜 ”方路暫存器330儲存了延遲過的控制訊號/CLK一D 2之電〜 壓位準以回應延遲過的控制訊號/CLK —D2以及位移控制訊 號SHI FT。 在第一延遲回應單元2 62中,一旁路訊號產生單元34〇被 致能,回應旁路暫存器33〇之輸出訊號以及暫存器331之輸 出訊號並產生一旁路訊號BYPASS。 為回應暫存器331至335的非反相/反相訊號,一延遲決508593 V. Description of the invention (5) 260 ° Referring to FIG. 3, the first delay measurement unit 261 shifts the low bit of the delayed control signal 1 / CLK-D2 to the measurement nodes N31 to N35 in response to the measurement oscillation signal, M-0SC . Then, the registers 331 to 335 store the shifted low levels of the measurement nodes N31 to N35 while controlling the clock signal CLK2 to be high. The low-order bits stored in the registers 331 to 335 are output to the first delay response unit 262 in response to the control clock signal CLK2 and the one-bit signal SHIFT. In the first delay, in the quantity unit 261, the plurality of first conversion control units 3j to 315 convert the low-order bits of the delayed control signal / CLK_D2 to the node to N35 in response to the measurement oscillation signal M_〇sc. In response to the delayed control signal / CLK-D2 logic combination signal and the voltage levels on the measurement nodes N31 to N35, multiple second conversion control orders 7L321 to 324 convert the lower bits of the measurement nodes N31 to N35 to change control respectively Units 311 to 315. The registers 331 to 335 store the low bits of the measurement nodes N3! To N35 in response to the delayed control signal / CLK-D2 and the shift control signal shift. ~ ”The square way register 330 stores the delayed control signal / CLK_D 2 power ~ presses the level to respond to the delayed control signal / CLK —D2 and the displacement control signal SHI FT. In the first delayed response unit In 2 62, a bypass signal generating unit 34 is enabled, and responds to the output signal of the bypass register 33 and the output signal of the register 331 and generates a bypass signal BYPASS. In response to the registers 331 to 335 Non-inverting / inverting signal, one delay decision
第9頁 508593 五、發明說明(6) 定單元350產生鎖定訊號η至15以決定要回應的延遲之大 小0 一 多個第三轉換控制單元371至375將一預先決定的電壓位 準轉換至回應節點r 3 1至R 3 5以回應鎖定訊號11至I 5,回應 訊號/REPLICA以及回應振盪訊號R_〇sc。 多個第四轉換控制單元361至365將第三轉換控制單元 371至375的每個輸出訊號轉換至下一個轉換控制單元。 一輸出單元380輸出第一dll時鐘訊號DLL一CLK1以對回辱 訊號/REPLICA以及回應振盪訊號R_〇sc做出反應。 圖4為一電路圖,說明顯示於圖3中的暫存器。 參考圖4,每個暫存器331至335包括:一第一傳送閘TG41 以傳送每個測量節點之電壓位準〖N以回應控制時鐘訊號 CLK2 ; —第一閃鎖430以儲存第一傳送閘TG41的輸出訊 號;一第二傳送閘TG42以傳送第一問鎖43()之輸出訊號以 回應位移控制訊號SHIFT ;以及一第二閂鎖450以儲存第二 傳送閘TG4 2之輸出訊號並輸出一非反相訊號〇UT以及一反; 相訊號/OUT。 圖5為一電路圖,說明顯示於圖2中的第二延遲單元 -270 〇 參考圖5,第二延遲單元270包括第二延遲測量單元271 以測量一將被精細延遲的時間,以及一第二延遲回應單元 272以將第一DLL時鐘DLL —CLK1延遲達所測量的時間以產生 第二DLL 時鐘DLL_CLK2。 第二延遲測量單元2 71包括··多個單位延遲元件831至834Page 9 508593 V. Description of the invention (6) The fixed unit 350 generates the lock signals η to 15 to determine the magnitude of the delay to be responded to. A plurality of third conversion control units 371 to 375 convert a predetermined voltage level to The response nodes r 3 1 to R 3 5 respond to the lock signals 11 to I 5, the response signal / REPLICA, and the oscillation signal R_〇sc. The plurality of fourth conversion control units 361 to 365 convert each output signal of the third conversion control units 371 to 375 to the next conversion control unit. An output unit 380 outputs the first DLL clock signal DLL_CLK1 to respond to the retalination signal / REPLICA and the response oscillation signal R_〇sc. FIG. 4 is a circuit diagram illustrating the register shown in FIG. 3. Referring to FIG. 4, each of the registers 331 to 335 includes: a first transmission gate TG41 to transmit the voltage level of each measurement node [N in response to the control clock signal CLK2; — a first flash lock 430 to store the first transmission The output signal of the gate TG41; a second transmission gate TG42 to transmit the output signal of the first interlock 43 () in response to the shift control signal SHIFT; and a second latch 450 to store the output signal of the second transmission gate TG4 2 and Output a non-inverting signal OUT and one inversion; phase signal / OUT. 5 is a circuit diagram illustrating the second delay unit -270 shown in FIG. 2. Referring to FIG. 5, the second delay unit 270 includes a second delay measurement unit 271 to measure a time to be finely delayed, and a second The delay response unit 272 delays the first DLL clock DLL_CLK1 by the measured time to generate a second DLL clock DLL_CLK2. The second delay measurement unit 2 71 includes a plurality of unit delay elements 831 to 834
第10頁 508593 五、發明說明(7) 以精細地延遲測量振盪訊號M — 〇sc以產生延遲過的測量振 盪訊號A1,B1,C1和D1 ;多個旗標暫存器511至514以儲存延 遲過的測量振盪訊號A1,B1,C1*D1以回應旗標訊號几“, 一反相過的旗標訊號/FLAG,控制時鐘訊號CLK2以及位移 控制訊號SHIFT ;以及一輸出單元82〇以接收旗標暫存器 511至514之輸出訊號來產生節點訊號1』232,62,(:3: 第一延遲回應單元272邏輯地組合了節點訊號ιΙΝ2, A2, B2, C3以及第一DLL時鐘訊號DLL—CLK1以產生第二DLL·時鐘 訊號DLL_CLK2。 ; 圖6為一電路圖,說明顯示於圖5中的旗標暫存器。 參考圖6,母個旗標暫存器包括,一第一傳送閘% 6丨以 傳送一延遲過的測量振盪訊號丨N之反相過的訊號以回應控 制¥鐘吼號CLK2 ; —第一閂鎖630以存第一傳送閘TG61之 輪出訊號;一第二傳送閘TG62以傳第一閂鎖630之輸出訊 谠以回應位移控制訊號SHIFT ; —第二閂鎖650以儲存第二 傳送閘TG 6 2之輸出訊號;一第三傳閘TG63以輸出第二傳送 間TG62之輸出訊號以回應非反相/反相旗標訊號^…以及 1LAG ;以及一第四傳送閘TG64a輸出第二閂鎖65〇之輸出-Λ號以回應非反相/反相旗標訊號FLAG以及/FLAG。 右反相過的旗標訊號/FLAG啟動的話,旗標暫存器輸出 延遲過的測量振盪訊號,且若旗標訊號几“啟動的話,旗 標暫存器輸出延遲過的量振盪訊號之反相的訊號。 在下文中’根據本發明之])LL之操作將參考圖7至1 3加以 說明。Page 10 508593 V. Description of the invention (7) Delayed measurement of oscillation signals M — 0sc to produce delayed measurement oscillation signals A1, B1, C1, and D1; multiple flag registers 511 to 514 to store Delayed measurement oscillation signals A1, B1, C1 * D1 in response to the flag signal ", an inverted flag signal / FLAG, a control clock signal CLK2 and a displacement control signal SHIFT; and an output unit 820 to receive The output signals of the flag registers 511 to 514 are used to generate the node signal 1 ′ 232, 62, (3: the first delay response unit 272 logically combines the node signals ιΙΝ2, A2, B2, C3 and the first DLL clock signal DLL_CLK1 to generate a second DLL clock signal DLL_CLK2. Figure 6 is a circuit diagram illustrating the flag register shown in Figure 5. Referring to Figure 6, the parent flag register includes a first transfer The gate% 6 丨 sends a delayed measurement oscillation signal 丨 the inverted signal of N to respond to the control ¥ 钟 钟 号 CLK2;-the first latch 630 to store the signal of the first transmission gate TG61; The second transmission gate TG62 responded by transmitting the output signal of the first latch 630 Displacement control signal SHIFT;-The second latch 650 stores the output signal of the second transmission gate TG 62; a third transmission gate TG63 outputs the output signal of the second transmission chamber TG62 in response to the non-inverting / inverting flag The signals ^ ... and 1LAG; and a fourth transmission gate TG64a outputs the output of the second latch 650-Λ in response to the non-inverted / inverted flag signals FLAG and / FLAG. Right inverted flag signal / When FLAG is activated, the flag register outputs a delayed measurement oscillation signal, and if the flag signal is "enabled", the flag register outputs a delayed inverse signal of the amount of oscillation signal. [Invention]) The operation of LL will be described with reference to FIGS. 7 to 13.
第11頁 508593 五、發明說明(8) ----- 參考圖7,當控制時鐘訊號CLK2以及延遲過的控制訊號 /CLK一D2分別為低位及高位時,vc〇 240被關起且節點 至Ν35被重設為一高位。 ” 然後’當控制時鐘訊號CLK2以及延遲過的控制訊號 /CLLD2分別為一高位及一低位時,旁路暫存器儲存了 延遲過的控制訊號/CLK — D2之低位且延遲過的控制訊號 /CLK-D2胃之低位隨後從測量節點N31位移至測量節點们5以 回應測量振盪訊號10SC。結果,暫存器331至335儲存了 位移過的低位。 ^ 假設在控制時鐘訊號CLK2為一高位之同時低位被位移至 節點N335,低位從暫存器331改由暫存器335儲存。因此’ 只有鎖定訊號15為高位而其他鎖定訊號丨丨至“為低位。另 外,反相過的旗標訊號/FLAG變成低位。 參,圖8,若回應訊號/replica被啟動至低位,回應振 盪訊號R一0SC被扣住,如此使得隨後將低位由回應節點R35 轉換至節點R31。 : 因為反相過的旗標訊號/FLAG為一低位,節點變成高 位,如此使得第一 DLL·時鐘訊號DLL 一 CLK在回應振盪訊號— R-0SC因為節點R31之電壓位準而第五轉換之後被啟動。 圖9說明了控制訊號CLK2以及測量振盪訊號M—〇sc之時序 圖,而圖10說明了第二延遲單元27 0在第一延遲單元26()認 測里振I A说Μ一0SC之第五轉換的情況中的邏輯位準。 參考圖9和10 ,因為反相過的旗標訊號/FLAG被啟動至一 低位,旗標暫存器511至514輸出一等於輸入訊號之訊號。 508593Page 11 508593 V. Description of the invention (8) ----- Referring to Figure 7, when the control clock signal CLK2 and the delayed control signal / CLK_D2 are low and high, respectively, vc〇240 is turned off and the node To N35 is reset to a high position. "Then, when the control clock signal CLK2 and the delayed control signal / CLLD2 are a high bit and a low bit, respectively, the bypass register stores the delayed control signal / CLK — the low bit of D2 and the delayed control signal / The low level of CLK-D2 stomach was then shifted from measurement node N31 to measurement nodes 5 in response to the measurement oscillation signal 10SC. As a result, the registers 331 to 335 stored the shifted low position. ^ Assume that the control clock signal CLK2 is a high level At the same time, the low bit is shifted to the node N335, and the low bit is changed from the register 331 to the register 335. Therefore, 'only the lock signal 15 is high and the other lock signals 丨 丨' are "low." In addition, the inverted flag signal / FLAG goes low. Refer to Figure 8. If the response signal / replica is activated to a low position, the response oscillation signal R_0SC is blocked, so that the low position is subsequently switched from the response node R35 to the node R31. : Because the inverted flag signal / FLAG is a low bit, the node becomes a high bit, so that the first DLL · clock signal DLL_CLK responds to the oscillation signal — R-0SC is changed after the fifth conversion because of the voltage level of node R31 Was started. Fig. 9 illustrates the timing chart of the control signal CLK2 and the measurement oscillation signal M-osc, and Fig. 10 illustrates the second delay unit 27 0 in the first delay unit 26 (). Logical level in case of conversion. Referring to FIGS. 9 and 10, since the inverted flag signal / FLAG is activated to a low position, the flag registers 511 to 514 output a signal equal to the input signal. 508593
在此時’因為控制時鐘旬余 m ^ ^ ^ ^ ^ 吁里efl ^CLK2恰在第五轉換時的高位被 傳送之刖關掉,筋點a 1嫉4 > 、准持在低位,而只有節點IIN2變 成尚位。即,在節點Μ一IN2完成一鎖定。 一 圖11說明了第二延邐軍开970/赞 Ζϋ ^ ^ - η 窃 、遂早疋270在第一延遲早7L260未確認 測置振盪訊號M—0SC之第五轉換之情況中的邏輯位準。 參考圖11,因為反相過的旗標訊號被關至一高位,旗標 存器輸出了一與輸入訊號相反之訊號。因此,只有」節 點Η2變成高位,而其他節點變成低位。即,在節ςΗ2上完 成了一鎖定。 ·At this time, because the control clock is more than m ^ ^ ^ ^ ^ Yuli efl ^ CLK2 was turned off at the high position just after the fifth transition, and the ribs a 1 and 4 were held in the low position, while Only node IIN2 becomes up. That is, a lock is completed at the node M_IN2. A figure 11 illustrates the logical level of the second Yanbian army ’s opening 970 / Zan ϋ ^ ^ ^ η stealing, then early 270 in the case of the fifth delay of the first delay early 7L260 without confirming the measured oscillation signal M-0SC . Referring to FIG. 11, because the inverted flag signal is turned off to a high level, the flag register outputs a signal opposite to the input signal. Therefore, only "node 2" becomes high, and other nodes become low. That is, a lock is completed on section Η2. ·
圖1 2說明了根據本發明之DLL之整個時序圖。 一 參考圖12,若第一延遲單元26〇確認了測量振盪訊號 M—0SC之第五轉換,第一DLL時鐘訊號DLL—CLK1在第五轉換 上產生。同時,若第一延遲單元26 0未確認測量振盪訊號 M—0SC之第五轉換,第一dll時鐘訊號DLL一CLK1在第四轉換 上產生。然而,因為鎖定之位置根據旗標訊號FLAG而改 變,有可能獲得一最終的DLL時鐘訊號,即,第:DLL時鐘 訊號DLL—CLK,其會超前外界時鐘訊號CLK偏斜tdi。Figure 12 illustrates the overall timing diagram of a DLL according to the present invention. Referring to FIG. 12, if the first delay unit 26 confirms the fifth transition of the measurement oscillation signal M-0SC, the first DLL clock signal DLL_CLK1 is generated on the fifth transition. At the same time, if the first delay unit 260 does not confirm the fifth transition of the measurement oscillation signal M-0SC, the first dll clock signal DLL_CLK1 is generated on the fourth transition. However, because the locked position is changed according to the flag signal FLAG, it is possible to obtain a final DLL clock signal, that is, the first: DLL clock signal DLL-CLK, which will be ahead of the external clock signal CLK skewed tdi.
雖然發明之較佳實施例已揭示供說明的之用,熟悉技藝 的人士會了解不同的修改增刪是可能的,而不會違反本發 明之範圍以及精神,如所附的申請專利範圍中所揭示的。Although the preferred embodiments of the invention have been disclosed for illustrative purposes, those skilled in the art will understand that different modifications, additions and deletions are possible without violating the scope and spirit of the invention, as disclosed in the scope of the attached patent of.
508593 案號 89127733 91· f 修正 圖式簡單說明 元件符號 說明 210 220 230 240 250 260 26 1 262 270 271 272 311-315 321-324 330 33 卜335 340 361-365 371-375 380 430 450 51 卜 521 630 820 延遲模型 831-834 訊號產生單元 11-15 控制單元 R31-R35 電壓控制振盪器(VCO) TG41,TG61 鏡VCO 第一延遲單元 第一延遲測量單元 第一延遲回應單元 第二延遲單元 第二延遲測量單元 第二延遲回應單元 第一轉換控制單元 第二轉換控制單元 旁路暫存|§ 暫存器 旁路訊號產生單元 第四轉換控制單元 第三轉換控制單元 輸出單元 第一閂鎖 第二閂鎖 旗標暫存器 第一閂鎖 輸出單元 TG42,TG62 TG63 單位延遲元件 鎖定訊號 複製節點 第一傳送閘 第二傳送閘 第三傳送閘508593 Case No. 89127733 91 · f Modified diagram Brief description of component symbols 210 220 230 240 250 260 26 1 262 270 271 272 311-315 321-324 330 33 Bu 335 340 361-365 371-375 380 430 450 51 Bu 521 630 820 Delay model 831-834 Signal generation unit 11-15 Control unit R31-R35 Voltage controlled oscillator (VCO) TG41, TG61 Mirror VCO First delay unit First delay measurement unit First delay response unit Second delay unit Second Delay measurement unit second delay response unit first conversion control unit second conversion control unit bypass temporary storage | § register bypass signal generation unit fourth conversion control unit third conversion control unit output unit first latch second Latch flag register First latch output unit TG42, TG62 TG63 Unit delay element lock signal Copy node first transfer gate second transfer gate Third transfer gate
O:\67\67432-9l0911.ptc 第14頁O: \ 67 \ 67432-9l0911.ptc Page 14
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1999-0047923A KR100399070B1 (en) | 1999-11-01 | 1999-11-01 | Doulble locking delay locked loop clock generation device using ring oscillator |
Publications (1)
Publication Number | Publication Date |
---|---|
TW508593B true TW508593B (en) | 2002-11-01 |
Family
ID=19617987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW089127733A TW508593B (en) | 1999-11-01 | 2000-12-22 | Delay locked loop for use in synchronous dynamic random access memory |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100399070B1 (en) |
TW (1) | TW508593B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7676686B2 (en) | 2005-09-29 | 2010-03-09 | Hynix Semiconductor, Inc. | Delay locked loop circuit and synchronous memory device including the same |
US7945800B2 (en) | 2003-12-23 | 2011-05-17 | Round Rock Research, Llc | Synchronization devices having input/output delay model tuning elements in signal paths to provide tuning capabilities to offset signal mismatch |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100513806B1 (en) * | 2000-12-30 | 2005-09-13 | 주식회사 하이닉스반도체 | Semiconductor Device |
KR100424182B1 (en) * | 2001-12-21 | 2004-03-24 | 주식회사 하이닉스반도체 | A delay locked loop circuit with an improved jitter performance |
KR100709474B1 (en) * | 2005-12-21 | 2007-04-18 | 주식회사 하이닉스반도체 | Delay locked loop for generating stable internal clock signal regardless of variation of external condition |
KR100810073B1 (en) * | 2006-09-29 | 2008-03-05 | 주식회사 하이닉스반도체 | Semiconductor memory device and the method for operating the same |
KR101276727B1 (en) * | 2011-11-17 | 2013-06-19 | 고려대학교 산학협력단 | Method and apparatus for detecting phase and frequency |
-
1999
- 1999-11-01 KR KR10-1999-0047923A patent/KR100399070B1/en not_active IP Right Cessation
-
2000
- 2000-12-22 TW TW089127733A patent/TW508593B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7945800B2 (en) | 2003-12-23 | 2011-05-17 | Round Rock Research, Llc | Synchronization devices having input/output delay model tuning elements in signal paths to provide tuning capabilities to offset signal mismatch |
US7676686B2 (en) | 2005-09-29 | 2010-03-09 | Hynix Semiconductor, Inc. | Delay locked loop circuit and synchronous memory device including the same |
Also Published As
Publication number | Publication date |
---|---|
KR20010044876A (en) | 2001-06-05 |
KR100399070B1 (en) | 2003-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5537568B2 (en) | Signal receiving circuit, memory controller, processor, computer, and phase control method | |
US6333893B1 (en) | Method and apparatus for crossing clock domain boundaries | |
KR100832007B1 (en) | Semiconductor memory device and operation method thereof | |
US8441888B2 (en) | Write command and write data timing circuit and methods for timing the same | |
US8045406B2 (en) | Latency circuit using division method related to CAS latency and semiconductor memory device | |
US7881132B2 (en) | Semiconductor memory device and operation method thereof | |
US7675797B2 (en) | CAS latency circuit and semiconductor memory device including the same | |
US20100052739A1 (en) | Device and control method of device | |
KR101004665B1 (en) | Semiconductor memory device and output enable signal generating method | |
TW200407893A (en) | Circuit and method for generating output control signal in synchronous semiconductor memory device | |
US7394886B2 (en) | Semiconductor device with latency counter | |
JP4434468B2 (en) | Delay locked loop circuit for skew compensation in SDRAM | |
US8233339B2 (en) | Semiconductor memory device | |
WO2005106888A1 (en) | Multiple data rate ram memory controller | |
TW508593B (en) | Delay locked loop for use in synchronous dynamic random access memory | |
US20060214710A1 (en) | Delay-lock loop and method having high resolution and wide dynamic range | |
GB2409550A (en) | Data strobe generator synchronised with a data signal using a clock frequency different to the data signal clock frequency | |
US20180123600A1 (en) | Clock generation circuit, and semiconductor device and system using the same | |
KR100762882B1 (en) | Circuit For Controlling Data Output Enable Signal | |
WO2013042233A1 (en) | Semiconductor device | |
US8498175B2 (en) | Burst order control circuit | |
JP3859885B2 (en) | Semiconductor memory device | |
TW533679B (en) | Delayed locked loop clock generator using delay-pulse-delay conversion | |
US8514005B2 (en) | Circuit and method for generating multiphase clock signals and corresponding indication signals | |
KR20080063877A (en) | Semiconductor memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |