TW506109B - Method for clearly identifying wafer identification mark after bump formation step - Google Patents

Method for clearly identifying wafer identification mark after bump formation step Download PDF

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Publication number
TW506109B
TW506109B TW90129281A TW90129281A TW506109B TW 506109 B TW506109 B TW 506109B TW 90129281 A TW90129281 A TW 90129281A TW 90129281 A TW90129281 A TW 90129281A TW 506109 B TW506109 B TW 506109B
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TW
Taiwan
Prior art keywords
wafer
identification mark
bump
photoresist
forming
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TW90129281A
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Chinese (zh)
Inventor
Huei-Peng Wang
Guo-Wei Lin
Shiou-Mei You
Da-Yang Lin
Li-Shin Tzeng
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Taiwan Semiconductor Mfg
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Priority to TW90129281A priority Critical patent/TW506109B/en
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Publication of TW506109B publication Critical patent/TW506109B/en

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

There is provided a method for clearly identifying wafer identification mark after bump formation step, which is suitable for a wafer. The surface of the wafer has an area formed thereon a wafer identification mark. The method comprises the steps of: forming a photoresist layer on the area formed with the wafer identification mark on the wafer surface; using a mask with a predetermined pattern to perform a first exposure step to the photoresist layer at a first position, and perform a second exposure step to the photoresist layer at a second position; and performing a developing step, wherein there is a predetermined distance between the first position and second position.

Description

!)U61U9 五、發明說明(1) 【發明領域】 、本發明是有關於一種用以使晶圓識別記號清楚識別之 方法’且特別是有關於一種用以在凸塊形成步驟後使晶圓 識別記號清楚識別之方法。 【發明背景】 。在半導體製程中,為了要能夠方便地識別出每一片晶 圓’故一般皆會先在晶圓表面刻印或印刷上編號。之後, 再禾1用光學文子1 買取機(Optical Character Reader,以 下簡稱OCR )讀取其編號,以對晶圓進行數據化的管理, ^上述位於晶圓表面的編號則統稱為晶圓識別記號 ^ & 1D )。然而,當在晶圓表面施行完凸塊形成步驟 ί: ii晶圓識別記號往往會被部份前述形成的凸塊遮蓋 其$ i ^圓識別5己號變得不清楚而無法被0CR所判讀或 及被^ 二曰Ϊ Ϊ情形一旦發生’對於無法被讀取的晶圓 理,如此則會產生額外的處理成本, 而使整體製造成本提高,並拉長整 【發明概要】 饌ι転凡成的牯間 有鐘於此,本發明的主I日& Μ开彡成牛驟噹你曰η 的就是提供一種用以在凸 塊开y成步驟後使晶圓識別記號清楚 A拟人 晶圓,上述晶圓的表面具有一形^別之方法,適用於一 ,包括下列步驟: 成有晶圓識別記號之區域 形成一光阻層於上述晶圓表面 之區域; _之形成有晶圓識別記號!) U61U9 V. Description of the invention (1) [Field of invention] The present invention relates to a method for clearly identifying a wafer identification mark ', and particularly to a method for making a wafer after a bump forming step. The method of clearly identifying the identification mark. [Background of the Invention]. In the semiconductor process, in order to be able to easily identify each wafer ', generally, the wafer surface is first engraved or numbered. After that, He Wo 1 reads its serial number with an Optical Character Reader 1 (Optical Character Reader, hereinafter referred to as OCR) to carry out data management of the wafer. ^ The serial numbers on the surface of the wafer are collectively referred to as wafer identification marks. ^ & 1D). However, when the bump formation step is performed on the wafer surface: ii The wafer identification mark is often covered by some of the previously formed bumps. The $ i ^ circle identification 5 mark becomes unclear and cannot be read by 0CR. Or, if the situation occurs once the wafer ca n’t be read, it will generate additional processing costs, which will increase the overall manufacturing cost and lengthen the whole [Summary of Invention] 馔 ι 転 凡There is a clock here. The main day of the invention & MM is open. When you say η, it is to provide a way to make the wafer identification mark clear after the step of forming y. Round, the surface of the wafer has a shape method, which is applicable to one, and includes the following steps: forming a photoresist layer on the surface of the wafer in the area where the wafer identification mark is formed; Identification mark

506109 五、發明說明(2) 藉由一具有既定圖案之光罩於一第一位置對上述光阻 層施行一第一曝光步驟,再於一第二位置對上述光阻層施 行一第二曝光步驟;以及 施行一顯影步驟; 其中··上述第一位置與上述第二位置係具有一既定間 隔。 依據上述之方法,就可簡單地藉由其中的雙重曝光步 驟來使得之後的凸塊形成步驟中不會在上述晶圓識別記號 的表面形成凸塊,因此,晶圓識別記號就會變得可清楚識506109 V. Description of the invention (2) A first exposure step is performed on the photoresist layer through a photomask with a predetermined pattern at a first position, and a second exposure is performed on the photoresist layer at a second position. Step; and performing a developing step; wherein the first position and the second position have a predetermined interval. According to the above method, it is possible to simply use the double exposure step therein so that bumps will not be formed on the surface of the wafer identification mark in the subsequent bump formation step, so the wafer identification mark will become available. Know clearly

別而能輕易被OCR所讀取,故無須額外再利用人眼辨識等 其他方式來進行後續的辨認處理,所以可省下額外的處理 成本,降低整體製造成本,並且能縮短整體製程完成的時 間0 【圖式之簡單說明】 第1圖係表示刻印有晶圓識別記號之晶圓的示意上視 圖0 第2圖係表示第1圖中A區域之部份放大示意圖。 第3a圖〜第3c圖係表示本發明方法之步驟流程示意 圏。 【符號說明】 1 0〜晶圓; 1 2〜晶圓識別記號; 20〜光阻層; 30〜光罩; 32〜圖案; 33〜未曝光光阻部。 【發明之詳細說明】It can be easily read by OCR, so there is no need to use other methods such as human eye recognition for subsequent identification processing, so it can save additional processing costs, reduce overall manufacturing costs, and shorten the overall process completion time. 0 [Simplified description of the drawing] Fig. 1 is a schematic top view showing a wafer engraved with a wafer identification mark. 0 Fig. 2 is an enlarged view of a part of the area A in Fig. 1. Figures 3a to 3c are schematic diagrams showing the steps of the method of the present invention. [Symbol description] 10 to wafer; 12 to wafer identification mark; 20 to photoresist layer; 30 to photomask; 32 to pattern; 33 to unexposed photoresist. [Detailed description of the invention]

五、發明說明(3) 為讓本發明$ μ_ 顯易懂, ^ <上逃和其他目的、特徵、和優點能更明 細說明如^文特舉出較佳實施例’並配合所附圖式’作詳 【實施例】 厂、咅f照第1圖’其係表示刻印有晶圓識別記號之晶圓的 »、ι : %視圖。圖中’ 1〇為晶圓’ A區域則係刻印有晶圓識 A 2之區域。其次,參照第2圖,此圖係表示第1圖中 A區域之部份放大示意圖。 η 首先,如第3a圖所示,在A區域之表面沉積一光阻層 上述光阻可使用舉例如:乾膜光阻(仏丫 f i phot〇resist )等,且可為正型光阻或負型光阻,此處係 採用負型光阻來進行說明。 接著,如第3b圖所示,利用具有既定圖案32之光罩3〇 於一既定位置對上述光阻層2〇施行一第一曝光步驟。如前 所述,由於此處光阻層20係採用負型光阻,故圖案32下的 光阻層就會因光線被圖案32遮蔽住而成為未曝光光阻部33 (參照後述第3c圖中所示之虛線圓圈的部份),亦即,此 未曝光光阻部3 3應該要在顯影步驟中被顯影掉。 然後,如第3c圖所示,令a區域稍微往下方(第^圖 中所示之箭頭方向)偏移至另一個既定位置,再對上述光 阻層20施行一第二曝光步驟。如此,就可使前述之未曝光 部份33曝光,而讓其不會在後述之顯影步驟中被顯影。最 後,施行一顯影步驟。 ^ ' 根據上述之方法,就可簡單地藉由其中的雙重曝光步V. Description of the invention (3) In order to make the present invention $ μ_ obvious, ^ < escape and other purposes, features, and advantages can be explained in more detail. Formula "Details [Example] The factory and the photo are shown in Fig. 1", which are », ι, and% views showing a wafer engraved with a wafer identification mark. In the figure, the area “10 is a wafer” A is the area marked with the wafer identification A 2. Secondly, referring to FIG. 2, this figure is an enlarged view showing a part of area A in FIG. η First, as shown in FIG. 3a, a photoresist layer is deposited on the surface of the area A. The above photoresist can be used, for example, dry film photoresist (Polar Film Resistor), etc., and can be a positive photoresistor or Negative photoresist. Here, a negative photoresist is used for illustration. Next, as shown in FIG. 3b, a first exposure step is performed on the photoresist layer 20 at a predetermined position using a mask 30 having a predetermined pattern 32. As mentioned above, since the photoresist layer 20 is a negative type photoresist, the photoresist layer under the pattern 32 will be blocked by the pattern 32 and become an unexposed photoresist portion 33 (refer to FIG. 3c described later). (The part of the dotted circle shown in the figure), that is, the unexposed photoresist portion 33 should be developed in the developing step. Then, as shown in FIG. 3c, the area a is shifted slightly downward (in the direction of the arrow shown in FIG. ^) To another predetermined position, and then a second exposure step is performed on the photoresist layer 20. In this way, the aforementioned unexposed portion 33 can be exposed without being developed in a developing step described later. Finally, a developing step is performed. ^ 'According to the above method, you can simply use the double exposure step

506109 五、發明說明(4) 驟’來使付位於晶圓識別記號1 2表面之原本要顯影掉以用 來形成凸塊的未曝光光阻部33曝光,亦即,讓未曝光光阻 部3 3因曝光而變成不會在顯影步驟中被顯影,如此,就能 使得在之後的凸塊形成步驟中不會在上述晶圓識別記號的 表面形成凸塊’因此’晶圓識別記號就會變得可清楚識別 而能輕易被OCR所讀取,故無須額外再利用人眼辨識等其 他方式來進行後續的辨認處理’所以可省下額外的處理成 本,降低整體製造成本,並且能縮短整體製程完成的 此外,上述具有既定圖案32之光罩3〇,可為具有形 凸塊用圖案之凸塊形成用光罩,也可為且 A ^ /TT t n J崎具有形成凸塊底部 金屬(Under Bump Metal )用圖幸之几场十如人財 光罩。 〃⑺口茶之凸塊底部金屬形成用 雖然本發明已以較佳實施例揭露如上, 限定本發明,任何熟習此技藝者,.八里非用以 範圍當視後附之申請專利範圍所界定者為準。^月之保濩 I»506109 V. Description of the invention (4) Step 'to expose the unexposed photoresist portion 33 that was originally developed on the surface of the wafer identification mark 1 2 to form a bump, that is, let the unexposed photoresist portion 3 3 It will not be developed in the developing step due to exposure. In this way, in the subsequent bump forming step, bumps will not be formed on the surface of the above-mentioned wafer identification mark. Therefore, the wafer identification mark will be It becomes clearly identifiable and can be easily read by OCR, so there is no need to use other methods such as human eye recognition for subsequent identification processing ', so it can save additional processing costs, reduce overall manufacturing costs, and shorten the overall In addition to the completion of the manufacturing process, the above-mentioned photomask 30 having a predetermined pattern 32 may be a photomask for forming bumps having a pattern for shaped bumps, and A ^ / TT tn Jizaki has a metal for forming a bump bottom ( Under Bump Metal) used a few lucky matches as a mask of wealth. Although the present invention has been disclosed in the preferred embodiments above to limit the invention of the mouth tea, it is limited to the present invention. Anyone who is familiar with this technique, it should be used as the scope defined in the attached patents. Prevail. ^ Monthly Warranty I »

Claims (1)

六、申請專利範圍 1 · 一種用以在 別之方法,適用於 晶圓識別記镜之區 形成一光阻層 之區域; 2塊形成步驟後使晶圓識別記號清楚 曰曰® ’上述晶圓的表面具有一形成 織’包括下列步驟: 於上述晶圓表面之形成有 識 有 晶圓識別記號 藉由 層施彳丁--行一第二 施行 其中 隔。 2 ·如 後使晶圓 光阻。 3 ·如 後使晶圓 光阻。 4 ·如 後使晶圓 負型光阻 5·如 後使晶圓 案之光罩 6.如 一具有既 第一曝光 曝光步驟 一顯影步 :上述第 申請專利 識別記號 申請專利 識別記號 申請專利 識別記號 〇 申請專利 識別記號 為凸塊形 申請專利 定圖案之光罩於一第一位置對上述光 V驟,再於一第二位置訝上述光阻層 :以及驟; 一位置與上述第二位置係具有一既定 圍第1項所述之用以在凸塊形成步學 清楚識別之方法,其中上述光阻為負 範圍第1項所述之用以在凸塊形成步辱 清楚識別之方法,其中上述光阻為乾 範圍第3項所述之用以在凸塊形成步辱 清楚識別之方法,其中上述乾膜光随 範圍第1項所述之用以在凸塊形成步專 清楚識別之方法’其中上述具有既定 成用光罩。 範圍第1項所述之用以在凸塊形成步 ή 型 膜 為 II 圖6. Scope of Patent Application 1 · A method for forming a photoresist layer in another area suitable for wafer identification mirrors; make the wafer identification mark clear after the two forming steps The surface has a formation weave, which includes the following steps: forming an identified wafer identification mark on the surface of the wafer by applying a layer to the layer, performing a second execution of the spacer. 2 · Make the wafer photoresist after that. 3 · Make the wafer photoresist as described later. 4 · Make the wafer negative photoresistor as follows 5 · Make the wafer mask as follows 6. If there is a first exposure exposure step and a development step: the above-mentioned application patent identification number application patent identification number application patent identification number 〇 The identification mark for the patent application is a bump-shaped pattern for the patent application. The photomask is applied to the light at a first position, and the photoresist layer is surprised at a second position: and a position; There is a method for clearly identifying step formation in bumps as described in item 1 of the predetermined range, wherein the photoresist is in a negative range and a method for clearly identifying step formation in bumps as described in item 1 in which The above photoresist is a method for clearly identifying the step in the bump formation described in item 3 of the dry range, wherein the dry film light is specifically identified for the step of forming the bump in the range item 1 'Which of the above has an established photomask. The step 1 described in the range is used to form a step type film on the bump. 0503-6989twf ; TSMC200M048 ; Peterliou.ptd 第9頁 506109 六、申請專利範圍 後使晶圓識別記號清楚識別之方法,其中上述具有既定圖 案之光罩為凸塊底部金屬(Under Bump Metal)形成用光 罩。 410503-6989twf; TSMC200M048; Peterliou.ptd page 9 506109 VI. Method for clearly identifying the wafer identification mark after applying for a patent, wherein the above-mentioned photomask with a predetermined pattern is used for forming the bump bottom metal (Under Bump Metal) cover. 41 0503-6989twf ; TSMC2001-1048 ; Peterliou.ptd 第10頁0503-6989twf; TSMC2001-1048; Peterliou.ptd page 10
TW90129281A 2001-11-27 2001-11-27 Method for clearly identifying wafer identification mark after bump formation step TW506109B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016100560A1 (en) * 2014-12-16 2016-06-23 Deca Technologies Inc. Method of marking a semiconductor package
CN110320760A (en) * 2019-05-29 2019-10-11 宁波芯健半导体有限公司 It is a kind of that the identifiable exposure method of Wafer ID is guaranteed by multiple exposure
CN113506746A (en) * 2021-06-28 2021-10-15 华虹半导体(无锡)有限公司 Method for solving high step difference of super junction process marking area

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10373913B2 (en) 2014-08-26 2019-08-06 Deca Technologies, Inc. Method of marking a semiconductor package
WO2016100560A1 (en) * 2014-12-16 2016-06-23 Deca Technologies Inc. Method of marking a semiconductor package
US9613912B2 (en) 2014-12-16 2017-04-04 Deca Technologies Inc. Method of marking a semiconductor package
CN110320760A (en) * 2019-05-29 2019-10-11 宁波芯健半导体有限公司 It is a kind of that the identifiable exposure method of Wafer ID is guaranteed by multiple exposure
CN113506746A (en) * 2021-06-28 2021-10-15 华虹半导体(无锡)有限公司 Method for solving high step difference of super junction process marking area
CN113506746B (en) * 2021-06-28 2024-03-19 华虹半导体(无锡)有限公司 Method for solving high step difference in marking area of super junction technology

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