經濟部智慧財產局員工消費合作社印製 504745 A7 _ B7 五、發明說明（) 頜域： 一種應用於氧化矽層均質化製程之上管治具，適用於 四乙氧基矽烷製程使氧化矽層均質化的方法，其中包括一 內爐管上管治具，適用於將內爐管與外爐管作同軸對準。 發明背景上_ 氧化矽材質在半導體製程的應用上非常廣泛，從MOS 製程的第一個光罩開始，就可以見到氧化矽材質的蹤跡。 部分氧化砂材質’是以熱氧化法(Thermal Oxidation)加以 製作的，其目的是在獲得緻密度高、均質化佳的氧化矽材 質，但是形成的速度慢。若需要快速的形成氧化砂材質， 可以以化學氣相沉積法（Chemical Vapor Deposition，CVD) 製造。用於化學氣相沉積法沉積氧化砂材質的主要前趨物 有兩種，一爲矽甲烷（SiH4)，一爲四乙氧基矽烷 (Tetraethoxysilane，TEOS)。四乙氧基矽烷是—種含有矽 與氧的有機矽化合物，本身在室溫下爲液體，在適當的低 壓及溫度下可氣化爲氣體，因此可被使用於低壓化學氣相 沉積法用以製造氧化矽材質。因爲以四乙氧基矽烷爲前驅 物所產生的氧化砍材質階梯覆蓋（Step Coverage)非常好， 所以廣泛爲業界所採用。 一般以四乙氧基矽烷爲前驅物所產生的氧化矽材質 是在一爐管式低壓化學氣相沉積反應器中進行，請參照第 2 (請先閱讀背面之注意事項再填寫本頁) ^ »111 — 本紙張尺度適用中國國家標準（CNS)A4 ^^ (2ΐΓχ 297 ) 經濟部智慧財產局員工消費合作社印製 504745 五、發明說明（） 1圖，第1圖係繪示習知直立式爐管式低壓化學氣相沉積 反應器的剖面示意圖。反應器100包括一外爐管102和一 內爐管104，外爐管102 —般是由不鏽鋼材質所製成，內 爐管104 —般是由經高溫回火之後的石英爐管。內爐管 104置於外爐管102內，內爐管104和外爐管102需同軸 對準。載有晶圓片（未繪示於圖上）的經回火的石英晶舟 106置於內爐管104中，以進行沉積製程。 反應器另有一真空系統（未繪示於圖上）以移除反應室 內的廢氣。但在沉積的過程中，仍無可避免的會在內爐管 104及外爐管102上形成氧化矽材質的殘留。這些氧化矽 的殘留有可能會在沉積的過程中剝落而污染晶圓片，因 此，在經過一定次數的沉積製程之後，需將內爐管取出進 行預防性保養（Preventive Maintenance，PM)，然後將內爐 管放回外爐管之內。 請參照第2A圖，第2A圖係繪示一外爐管的仰視示 意圖。外爐管200包括一承載座(Adaptor)202，承載座202 適用於承放內爐管。在承載座202上具有缺口 204以及在 承載座202的頂面具有凹陷206。同時請參照第2B圖， 第2B圖係繪不一內爐管的仰視示意圖。內爐管210具有 凸緣212。 將內爐管210升起，凸緣212對準承載座202上的缺 口 204。當內爐管210的位置高於承載座202時，旋轉內 爐管210,將凸緣212對準承載座202頂面上的凹陷206。 接著，降下內爐管210，將凸緣212安置於凹陷206之內 3 本紙張尺度適用不^國家標準（CNS)A4規格（210 x 297公釐） n n n an «19 n n n n n n I · ti n fli f— n n n f i ^ 9 n an n cl n n n I t (請先閱讀背面之注意事項再填寫本頁) 504745 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 而將內爐管置於承載座202之上’而初步完成了內爐管的 安裝作業。 因爲凹陷206必須略大於凸緣212，以方便安置，所 以在內爐管21〇重新安裝上去時，內爐管210和外爐管200 的同軸對準間會產生相當大的偏差。內爐管210在適用於 四乙氧基矽烷製程時所做的設計和適用於沉積多晶砂或 氮化矽所做的設計相較之下內徑較窄，因此’晶舟（未繪 示於圖上）置入後’晶圓片（未繪示於圖上）邊緣和內爐管 210壁間的距離不等。因爲在四乙氧基矽烷製程中對晶圓 片邊緣和內爐管壁間的距離差異很敏感。晶圓片邊緣和內 爐管壁間的距離越小的位置，沈積的氧化矽材質就會越 厚；圚片邊緣和內爐管壁間的距離越大的位置，沈積的氧 化矽材質就會越薄。此一特性會造成在晶圓上所沉積的氧 化矽材質厚度不均勻的問題。 請再參照第2A圖，習知的解決方法爲在凹陷206的 側壁214上裝置墊片（未繪示於圖上），以縮小凸緣212與 側壁214間的間隙，即便如此，內爐管210和外爐管200 的同軸對準最大仍會產生約3公釐的偏差。 請參照第3圖，第3圖係繪示晶圓片和內爐管的相對 位置以及位於其上各檢測點所量得氧化矽層的厚度，一晶 圓片300與內爐管302的相對位置如第3圖所示，此一氧 化矽層係以四乙氧基矽烷製程沉積2000埃的厚度，可容 許均勻度的標準差在40埃以下，但由第3圖九個檢測點 所得的數値可以計算出標準差高達60.9埃。 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） T e n n n ϋ 1« n 11 n te n I · n tammw ϋ n n n flu J ^ f n n n n n n · I t^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印！^ 504745 Α7 Β7 五、發明說明（） 另外，根據實驗的結果發現，在一能形成均勻氧化矽 層的設備中，只要內爐管移動超過〇·5公釐，也就是內外 爐管間的同軸對準誤差超過〇·5公釐，所形成的氧化矽層 的不均勻度就超過可接受的範圍，而影響後續的製程，造 成總體製程良率的下降。 因此，在每一次預防性保養之後，設備工程師必須去 較準內爐管的位置以使內外爐管能夠同軸對準。較準的方 法是藉由每一批四乙氧基矽烷製程所得到晶圚片上氧化 矽材質的均勻度爲依據，依經驗推動內爐管上的一個控制 把手來移動內爐管以改變內爐管與外爐管間的相對位 置。當晶圓片上氧化矽層的均勻度在可接受的範圍之內’ 製程才能繼續進行。 這樣的校正方法，相當的費時，因而會降低產能。尤 有更甚者，這樣的校正方法全憑經驗摸索，無法將之規格 化，若是一個有經驗的設備工程師還好，但對一個缺乏經 驗的設備工程師而言，這個校正方法將會耗時更長甚而無 法達到均勻度的要求，期望他能藉由此校正方法迅速的完 成內外爐管的同軸對準，不諦是緣木求魚。 另外’還有一個變數可以控制晶圓片上形成的氧化矽 層的均勻度’那就是晶圓片在晶舟上的位置。機械手臂由 一組設定的位置參數(X，Υ)決定晶圓片置於晶舟上的位 置。晶舟置入內爐管內的位置是固定的，所以位置參數 (X，Υ)可以決定晶圓片與內爐管壁間的間隙的距離因而控 制形成之氧化矽層之均勻度，但前題是內爐管必須固定。 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297 h (請先閱讀背面之注意事項再填寫本頁) 丨· --訂·-------- 經濟部智慧財產局員工消費合作社印制π 504745 五、發明說明（） 每一次預防性保養之後內爐管的位置都會變動，因此，調 整位置參數(X，Y)並不具有任何意義。但若能固定內爐管 的位置，則藉由調整位置參數(X，Y)來調整氧化矽層之均 勻度將成爲可行。 發明目的及槪述： 有鑑於此，本發明的目的在提供一內爐管上管治具， 可以輕易的將內外爐管座同軸對準，而偏差不超過〇.〇5 公釐，而能達成形成均勻的氧化矽層的結果。 本發明的再一目的在提供一內爐管上管治具，可以將 內爐管定位，因而可以以調整機械手臂設定的位置參數 (X，Y)來改變晶舟之上晶圓片的位置’而能達成形成均勻 .的氧化砂層的結果。 本發明的又一目的在提供一標準操作程序（S.O.P)，可 以輕易的解決以四乙氧基矽烷製程形成的氧化矽層的均 勻度的問題，並可大幅提高製程的穩定性。 本發明所提供的內爐管上管治具’適用於校正內爐管 與外爐管間的相對位置而能使內爐管與外爐管同軸對 準，此依上管治具包括一支撐器、一定位器、及控制支撐 器與定位定位的第一轉盤與第二轉盤。其中，支撐器包括 第一裝置及支撐圓，定位器包括第二裝置及定位圓。第一 裝置可以爲第一圓盤，第二裝置可以爲第二圓盤。支撐圓 •可以爲支撐桿，定位圓可以爲定位桿’支撐圓包括至少三 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) (請先閱讀背面之注意事項再填寫本頁) ·--------訂——-丨 線 經濟部智慧財產局員工消費合作社印製 504745 A7 ______B7__ 五、發明說明（） 支撐桿且定位圓也至少包括三定位桿。 第二圓盤位於第一圓盤的上方而且與第一圓盤以同一 軸心連結。第一轉盤位於第一圓盤下方並和第一圓盤以同 一軸心連結，用來控制支撐圓。第二轉盤位於第一轉盤下 方，並和第一轉盤以同一軸心連結，用來控制定位圓。支 撐圓位於第一圓盤上，當轉動第一轉盤時，支撐圚可以同 心圓的方式向外撐開或項內收縮。定位圓則位於第二圓盤 上，當轉動第二轉盤時，支撐圚可以同心圓的方式向外撐 開或項內收縮。 將內爐管依原先的方式裝至於外爐管之內。其中先將 內爐管上的凸緣對準外爐管之承載座上的缺口將內爐管 升起，當內爐管的位置高於外爐管之承載座時，旋轉內爐 管，將凸緣對準外爐管之承載座頂面上的凹陷，降下內爐 .管，將凸緣安置於凹陷之內而將內爐管置於外爐管之承載 座之上，而初步完成了內爐管的安裝作業。 接著，將上管製具伸入爐管之中，其中第二圓盤高於 內爐管的底部而第一圓盤低於外爐管之承載座。轉動上管 治具上的第一轉盤，使位於第一圓盤上之支撐圓向外撐 開，撐住外爐管的內壁，此時，此上管治具的中心軸和外 爐管的中心軸可以同軸對準。然後，轉動上'管治具上的第 二轉盤，使位於第二圚盤上之定位圓向外撐開，若內爐管 未和外爐管同軸對準，定位圓將會有一邊和內爐管的內壁 先接觸。繼續旋轉第二轉盤讓定位圓繼續向外擴張，此時 定位圓先與內爐管接觸的一邊會推動內爐管朝接觸點法 7 J------------·--------tr---------^辞 (請先閱讀背面之注意事項再填寫本頁) 本紙張瓦度適用中國國家標準（CNS)A4規烙（210 X 297公釐） 504745 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 線的方向移動，直到定位圓完全撐住內爐管的內壁爲止’ 使第一圓盤與內爐管同軸對準。因爲上管治具已經和外爐 管同軸對準了，所以經過這樣的操作當可以使內外爐管輕 易的完成同軸對準的動作。 因爲機械手臂設定的位置參數(X，Y)可以決定晶圓片 與內爐管壁間的間隙的距離，因此，在能夠固定內爐管的 位置的前題下，改變位置參數(X，Y)來控制形成之氧化矽 層之均勻度因而可行。利用一連串的實驗找出位置參數 (X，Y)的變化與晶圓片上形成的氧化矽層均勻度變化兩者 之間的關係，例如，X的數値每增加1 ·，可以從晶圓片九 個檢測點所得到的數値知道四乙氧基矽烷製程的氧化矽 材質的厚度的變化量。由多次實驗的結果，可以定出位置 參數(X，Y)的變化與氧化矽層均勻度的關係而定出一組參 .數T，在試陣(Test Run)之後依此參數T直接修正晶圓片 的位置’而使氧化矽層均勻度更佳。 另外’在具有內爐管上管治具和參數T之後’更可以 提供一新的校準程序，在預防保養之後可以很快且很方便 的達成四乙氧基矽烷製程氧化矽層厚度均勻化的目的。期 g準流程如下：先以內爐管上管治具將內爐管裝入外爐管 Mil]軸對準。檢查晶舟本身是否筆直，若晶舟筆直則輸入 一組位置參數(X，Y)並由機械手臂一此位置參數（X，Y) 將晶圓片置入晶舟之中，若晶舟不筆直則須調整一水平値 以使晶舟筆直。進行一次試陣，進行氧化矽層的沉積。檢 查晶舟上端晶圓片上氧化矽層的均勻度，並依此數値來調 8 本紙張&度適用中國國家標準（CNS)A4規格（210 X 297公t ) ---------------------訂---------IAV. (請先閱讀背面之注意事項再填冩本頁) 504745 Λ7 B7 五、發明說明（） 整位置參數(X，Y)。檢查晶舟下端晶圓片上氧化矽層的均 勻度，並依此數値調整擋溫片而使熱流更爲均勻。經過如 此的校準標準程序，即使是新手亦可迅速的完成校準，四 乙氧基矽烷製程形成的氧化矽層的均勻度問題的解決將 可以標準化，大幅提高製程的穩定性。 圖式簡單說明： 第1圖係繪示習知直立式爐管式低壓化學氣相沉積反 應器的剖面示意圖； 第2A圖係繪示一外爐管的仰視示意圖； 第2B圖係繪示一內爐管的仰視示意圖； 第3圖係繪示晶圓片和內爐管的相對位置以及位於其 .上各檢測點所量得氧化矽層的厚度； 第4圖係繪示本發明所提供的內爐管上管治具； 第5A圖及第5B圖係繪示本發明所提供知上管治具的 操作方式；以及 第6圖係繪示標準操作程序的流程圖。 圖號對照說明= 100 :反應器 102、200、502 :外爐管 104、210、302、500 :內爐管 9 i ·· (請先閱讀背面之注意事項再填寫本頁) 訂---------線. 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) 經濟部智慧財產局員工消費合作社印製 504745 A7 B7 五、發明說明（） 106 :晶舟 202、504 :承載座 204 :缺口 206 :凹陷 212 :凸緣 214 :側壁 300 :晶圓片 400 ' 510 :上管治具 402、404、512、514 :圓盤 406、522、524 :定位桿 408、518 :支撐桿 410、412、516、520 :轉盤 414、418 :拉伸彈簧 422、424 :凸輪 426 ·•墊片 426 428 、 430 :軸 432、434 :傳動軸承 506、508 :軸心 526、28 :箭頭 530、532 :內側壁 發明詳細說明= 鑑於上述發明背景所述關於氧化矽層均質化製程所 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） •ϋ n ei t— an u n nv ϋ n i an · fli ·ϋ n· n an n i— Γ ^ t n HI ai·— n· fl·— ·ϋ ·1_1 I _ t 冬 (請先閱讀背面之注意事項再填寫本頁) 74 04 7 7 Λ Β 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 遭遇的問題，本發明提供一種內爐管上管治具，可以輕易 的將內外爐管座同軸對準，而能達成形成均勻的氧化f夕層 的結果。以及，一組參數T可以表現出機械手臂設定的位 置參數(X，Y)和氧化矽層之均勻度間的關係，可使晶_片 位置的修正標準化。 另外，利用此一內爐管上管治具和參數τ，可以提供 一新的校準程序，在預防保養之後可以很快且很方便的達 成四乙氧基矽烷製程氧化矽層厚度均勻化的目的。 實施例1 爲了讓本發明所提供之內爐管上管治具更加淸楚起 見，茲提供一較佳實施例說明如下： 請參照第4圖，第4圖係繪示本發明所提供的內爐管 上管治具400,適用於校正內爐管（未繪示於圖上）與外爐 管（未繪示於圖上）間的相對位置而能使內爐管與外爐管同 軸對準。此上管治具400包括圓盤402、404、定位桿406、 支撐桿408，轉盤410、412，拉伸彈簧414、418，凸輪 422、424,墊片426,軸428、430以及傳動軸承432、434。 圓盤402位於圓盤404的上方並與圓盤404連結，而 且與圓盤404具有同一軸心401。轉盤412位於圓盤404 下方並和圓盤404連結，而且與圓盤404具有同一軸心 401。轉盤412經由軸430和凸輪424連結以控制支撐桿 4〇8。軸430具有軸心401。轉盤410位於轉盤412下方並 I-----------蠍------- 丨訂---------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) 504745 A7 B7 五、發明說明（） 與之連結，並和轉盤412具有同一軸心401。轉盤410經 由軸428和凸輪422連結以控制定位桿406 °軸428具有 軸心401。支撐桿406位於圓盤4〇2上，經由傳動軸承434 與凸輪422連結。當轉動轉盤410時經由軸428同時使凸 輪422跟著轉動，凸輪422經由傳動軸承434帶動定位桿 406以同心圓的方式向外撐開或向內收縮。轉盤412位於 圓盤404下方並與之連結，並和圓盤404具有同一軸心 401。轉盤412經由軸430和凸輪424連結以控制支撐桿 408。軸430具有軸心401。支撐桿408位於圓盤404上’ 經由傳動軸承432與凸輪424連結。當轉動轉盤412時經 由軸430同時使凸輪424跟著轉動，凸輪424經由傳動軸 承432帶動支撐桿4Ό8以同心圓的方式向外撐開或向內收 縮。 經濟部智慧財產局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) -線 定位桿406及支撐桿4〇8上具有拉伸彈簧414、418 分別與圓盤402、404連結。拉伸彈簧414、418適用於定 位桿406及支撐桿408向外撐開或向內收縮時作爲緩衝器 之用。另外，定位桿406及支撐桿408的末端分別具有墊 片426。因爲定位桿406及支撐桿408的材質爲金屬，426 的功用在於定位桿406及支撐桿408與內、外爐管壁（未 繪示於圖上）接觸時當一緩衝止滑墊，以避免定位桿406 及支撐桿4〇8與內、外爐管壁接觸時會滑動或刮傷爐管壁。 上管治具的操作方式請參照第5A圖及第5B圖。請先 參照第5A圖，將內爐管500安置外爐管502之承載座504 之上，其中內爐管500之凸緣（未繪示於圖上）安置於外爐 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） 504745 A7 B7 五、發明說明（） 管502之承載座5〇4之凹陷（未繪示於圖上）之內而初步完 成了內爐管500的安裝作業。由第5A圖可以看出內爐管 500的軸心506和外爐管502的軸心508並未能對準且向 右偏移。 接著，將上管製具510伸入外爐管5〇2之中，其中上 管製具510的圖盤512高於內爐管500的底部而圓盤514 低於外爐管502之承載座504。轉動上管治具510上的轉 盤516，使位於圖盤514上的支撐桿518向外撐開，撐住 外爐管502的內壁’此時’此上管治具510的軸心和外爐 管的軸心508可以同軸對準。然後’轉動上管治具510上 的轉盤520，使位於圓盤512上的定位桿522、524分別朝 著箭頭526、528的方向向外撐開，定位桿522會先觸及 內爐管500的內側壁530。當定位桿522繼續向外延伸’ 此時定位桿522會推動內爐管500朝箭頭526的方向移 動，直到支撐桿524撐住內爐管500的內壁532爲止，請 參照第5B圖。這會使圓盤512與內爐管500同軸對準。 因爲上管治具510已經和外爐管502同軸對準了，所以經 過這樣的操作當可以使內外爐管輕易的完成同軸對準白勺 動作。 實施例2 在提供一內爐管上管治具，可以將內爐管定位之後’ 可以以調整控制機械手臂放置晶圓片於晶舟之上的位置 13 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) ------------•鲁 (請先閱讀背面之注意事項再填冩本頁) 訂---------線 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 504745 ______B7___ 五、發明說明（） 參數(X，Y)，經由多次實驗由位置參數(X，Y)的變化與氧 化矽層均勻度的關係而定出一組參數T。在具有上管治具 及參數T兩樣工具後，可以提供一標準操作程序（S.O.P)， 可以輕易的解決以四乙氧基矽烷製程形成的氧化矽層的 均勻度的問題，並可大幅提高製程的穩定性。 因此，本發明提供一標準操作程序，適用於爐管在預 防保養之後，用以迅速達成四乙氧基矽烷製程的穩定性和 均勻性。此一標準製程可以程式化而利用一微處理器來進 行。請參照第6圖，第6圖係繪示標準操作程序的流程圖。 首先，步驟600先以如實施例1所述的方法將內外爐管對 準，輸入一組位置參數(XI，Y1)由機械手臂依一組輸入的 位置參數(XI，Y1)將晶圓片置入晶舟，在將晶舟置入內爐 管。步驟602判斷晶舟是否筆直。如果晶舟不筆直則由步 驟604進形水平調整之後進入步驟606，開始四乙氧基矽 烷製程沉積氧化矽層。若晶舟筆直則直接進入步驟606， 開始四乙氧基矽烷製程沉積氧化矽層。 請繼續參照第6圖，四乙氧基矽烷製程沉積氧化矽層 完成後進入步驟608，量測晶圓片上九個檢測點上氧化砍 層的厚度得到一組數據A，量測晶舟下端晶圓片間相同位 置氧化矽層厚度得到一組數據B。進行步驟610，將數據 A輸入，微處理器將依據數據A及參數T將位置參數由 (XI，Y1)調整成(X2，Y2)。接著，進入步驟612，將數據 B輸入，微處理器將判斷晶舟下端晶圓片間相同位置氧化 矽層厚度是否均勻，若均勻度不好，進入步驟614，微處 14 < n n n ϋ n 1« n n n i n n · n ϋ n n u 1· #1 一：口V « n n n ϋ n (請先閱讀背面之注意事項再填寫本頁) 線- 本紙張尺度適用令國國家標準（CNS)A4規烙（210 X 297公釐） 504745 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 理器將依據數據B將檔溫片往氧化砂層較薄之晶圓片處 調整而完成標準操作程序。若均勻度良好，則進入步驟6U 完成標準操作程序。 依此一標準程序，以四乙氧基砂院製程沉積厚度2〇〇〇 埃的氧化矽層時，同一片晶圓片上氧化砂廢均勻度的標準 差由30埃至4〇埃降至10埃至20埃。以四乙氧基矽烷製 程沉積厚度埃的氧化矽層時，同一片晶圚片上氧化 矽層均勻度的標準差由20埃至25埃降至W埃至15埃。 另外，請參照下表，下表係使用同一沉積爐管及晶舟，在 兩次預防保養後分別使用習知的方法及本發明所揭露的 標準程序分別進行四乙氧基砍院製程氧化矽層均勻度的 調整，然後在整個工作週期中所得到的CP値與cPk値。 其中1表示使用習知的方法而2是使用本發明所揭露的標 準程序，Cp爲製程精準（Capability of ?!^(^丨011)而Cpk代 表製程能力指數。一般而言’ Cp及CPk的値越高表示四 乙氧基矽烷製程形成的氧化矽層均勻度越好。 表1 1 2 增加的百分比 Cp 2.09 2.58 23.4 Cpk 2.08 2.30 10.6 由表1的數據可知，依本發明提供一標準操作程序， 確實可以迅速達成四乙氧基矽烷製程的穩定性和均勻性。 15 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） I--------------------^---------^ (請先閱讀背面之注意事項再填寫本頁) 504745 A7 B7 五、發明說明（） 如熟悉此技術之人員所瞭解的，以上所述僅爲本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍內。 * n n n u ftis 9f n n n n n · i n n ϋ n an i ^ Jw t n n IV n n t (請先閱讀背面之注意事項再填寫本頁) 線 經濟部智慧財產局員工消費合作社印製 16 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 504745 A7 _ B7 V. Description of the invention () Jaw area: a fixture applied to the homogenization process of silicon oxide layer, suitable for the silicon oxide layer in the tetraethoxysilane process The homogenization method includes an inner furnace tube upper pipe fixture, which is suitable for coaxially aligning the inner furnace tube with the outer furnace tube. BACKGROUND OF THE INVENTION _ The silicon oxide material is widely used in semiconductor manufacturing processes. From the first photomask of the MOS process, traces of the silicon oxide material can be seen. The partially oxidized sand material 'is produced by a thermal oxidation method. The purpose is to obtain a high-density, homogeneous silicon oxide material, but the formation speed is slow. If rapid formation of oxidized sand material is required, it can be manufactured by Chemical Vapor Deposition (CVD). There are two main precursors used in chemical vapor deposition to deposit oxidized sand materials. One is SiH4 and the other is Teethethoxysilane (TEOS). Tetraethoxysilane is an organic silicon compound containing silicon and oxygen. It is a liquid at room temperature and can be vaporized into a gas at a suitable low pressure and temperature. Therefore, it can be used in low pressure chemical vapor deposition. To make silicon oxide. Because the step coverage of the oxidized chopping material produced by using tetraethoxysilane as a precursor is very good, it is widely used in the industry. Generally, the silicon oxide material produced by using tetraethoxysilane as a precursor is performed in a furnace-tube low-pressure chemical vapor deposition reactor. Please refer to section 2 (please read the precautions on the back before filling this page) ^ »111 — This paper size applies Chinese National Standard (CNS) A4 ^^ (2ΐΓχ 297) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 504745 5. Description of the invention () 1 picture, the first picture shows the conventional upright A schematic sectional view of a furnace tube type low pressure chemical vapor deposition reactor. The reactor 100 includes an outer furnace tube 102 and an inner furnace tube 104. The outer furnace tube 102 is generally made of stainless steel, and the inner furnace tube 104 is generally a quartz furnace tube after tempering at high temperature. The inner furnace tube 104 is placed in the outer furnace tube 102, and the inner furnace tube 104 and the outer furnace tube 102 need to be coaxially aligned. A tempered quartz crystal boat 106 carrying a wafer (not shown) is placed in the inner furnace tube 104 for the deposition process. The reactor also has a vacuum system (not shown) to remove the exhaust gas from the reaction chamber. However, during the deposition process, it is still unavoidable that a residue of silicon oxide material is formed on the inner furnace tube 104 and the outer furnace tube 102. These silicon oxide residues may peel off during the deposition process and contaminate the wafer. Therefore, after a certain number of deposition processes, the inner furnace tube needs to be taken out for preventive maintenance (PM), and then the Put the inner furnace tube back into the outer furnace tube. Please refer to FIG. 2A, which is a bottom view of an outer furnace tube. The outer furnace tube 200 includes an adaptor 202, which is suitable for receiving the inner furnace tube. There is a notch 204 on the supporting base 202 and a recess 206 on the top surface of the supporting base 202. Please also refer to FIG. 2B, which is a schematic bottom view of an inner furnace tube. The inner furnace tube 210 has a flange 212. The inner furnace tube 210 is raised, and the flange 212 is aligned with the cutout 204 on the carrier 202. When the position of the inner furnace tube 210 is higher than the support base 202, the inner furnace tube 210 is rotated to align the flange 212 with the recess 206 on the top surface of the support base 202. Next, lower the inner furnace tube 210 and place the flange 212 in the depression 206. 3 The paper size is not applicable to the national standard (CNS) A4 size (210 x 297 mm) nnn an «19 nnnnnn I · ti n fli f — Nnnfi ^ 9 n an n cl nnn I t (Please read the notes on the back before filling this page) 504745 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () and put the inner furnace tube in Above the supporting base 202, the installation of the inner furnace tube has been initially completed. Because the recess 206 must be slightly larger than the flange 212 for easy installation, the coaxial alignment of the inner furnace tube 210 and the outer furnace tube 200 will cause considerable deviation when the inner furnace tube 21 is reinstalled. The design of the inner furnace tube 210 when applied to the tetraethoxysilane process and the design suitable for the deposition of polycrystalline sand or silicon nitride has a narrower inner diameter, so the 'crystal boat (not shown) (On the picture) After placement, the distance between the edge of the wafer (not shown) and the wall of the inner furnace tube 210 varies. Because in the tetraethoxysilane process, it is sensitive to the difference in distance between the wafer edge and the inner furnace tube wall. The smaller the distance between the wafer edge and the inner furnace tube wall, the thicker the silicon oxide material will be deposited; the larger the distance between the edge of the wafer and the inner furnace tube wall, the silicon oxide material will be deposited. The thinner. This characteristic causes the problem of uneven thickness of the silicon oxide material deposited on the wafer. Please refer to FIG. 2A again. A conventional solution is to install a gasket (not shown) on the sidewall 214 of the recess 206 to reduce the gap between the flange 212 and the sidewall 214. Even so, the inner furnace tube The coaxial alignment of 210 and outer furnace tube 200 will still produce a maximum deviation of about 3 mm. Please refer to FIG. 3. FIG. 3 shows the relative positions of the wafer and the inner furnace tube and the thickness of the silicon oxide layer measured at each detection point on the wafer. The relationship between a wafer 300 and the inner furnace tube 302 The position is shown in Figure 3. This silicon oxide layer was deposited with a thickness of 2000 angstroms by a tetraethoxysilane process. The standard deviation of the allowable uniformity is less than 40 angstroms, but obtained from the nine detection points in Figure 3 The number can be calculated to a standard deviation of up to 60.9 Angstroms. 4 This paper size applies to China National Standard (CNS) A4 (210 X 297 meals) T ennn ϋ 1 «n 11 n te n I · n tammw ϋ nnn flu J ^ fnnnnnn · I t ^ (Please read the Please fill in this page for attention) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs! ^ 504745 Α7 Β7 5. Description of the invention () In addition, according to the experimental results, it is found that in a device capable of forming a uniform silicon oxide layer, as long as the inner furnace tube moves more than 0.5 mm, that is, the coaxial between the inner and outer furnace tubes When the alignment error exceeds 0.5 mm, the unevenness of the formed silicon oxide layer exceeds an acceptable range, which affects subsequent processes and causes a decrease in the overall process yield. Therefore, after each preventive maintenance, the equipment engineer must calibrate the position of the inner furnace tube so that the inner and outer furnace tubes can be aligned coaxially. The more accurate method is based on the uniformity of the silicon oxide material on the wafers obtained from each batch of tetraethoxysilane production process. According to experience, a control handle on the inner furnace tube is pushed to move the inner furnace tube to change the inner furnace. The relative position between the tube and the outer furnace tube. When the uniformity of the silicon oxide layer on the wafer is within an acceptable range, the process can continue. Such a calibration method is quite time-consuming and therefore reduces productivity. What's more, this calibration method is based on experience and cannot be standardized. If an experienced equipment engineer is fine, but for an inexperienced equipment engineer, this calibration method will take more time. Long can't even reach the requirement of uniformity. It is expected that he can quickly complete the coaxial alignment of the inner and outer furnace tubes by this correction method. In addition, there is another variable that can control the uniformity of the silicon oxide layer formed on the wafer, and that is the position of the wafer on the wafer boat. The robotic arm determines the position of the wafer on the wafer boat by a set of position parameters (X, Υ). The position where the wafer boat is placed in the inner furnace tube is fixed, so the position parameter (X, Υ) can determine the distance between the wafer and the inner furnace tube wall, thereby controlling the uniformity of the formed silicon oxide layer. The problem is that the inner furnace tube must be fixed. 5 This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 h (please read the precautions on the back before filling out this page) 丨 · --Order · -------- Intellectual Property Bureau, Ministry of Economic Affairs Printed by the employee consumer cooperative π 504745 V. Description of the invention () The position of the inner furnace tube will change after each preventive maintenance, so adjusting the position parameter (X, Y) does not have any meaning. But if the inner furnace tube can be fixed Position, it is feasible to adjust the uniformity of the silicon oxide layer by adjusting the position parameters (X, Y). Purpose of the invention and description: In view of this, the object of the present invention is to provide a fixture on the inner furnace tube. The inner and outer furnace tube holders can be aligned coaxially easily, and the deviation does not exceed 0.05 mm, so that the result of forming a uniform silicon oxide layer can be achieved. Another object of the present invention is to provide an inner furnace tube upper tube. The fixture can position the inner furnace tube, so the position parameters (X, Y) set by the robot arm can be adjusted to change the position of the wafer on the wafer boat, and the result of forming a uniform oxide sand layer can be achieved. Another object of the invention is to provide a standard The procedure (SOP) can easily solve the problem of the uniformity of the silicon oxide layer formed by the tetraethoxysilane process, and can greatly improve the stability of the process. The inner furnace tube upper fixture provided by the present invention ' It is suitable for correcting the relative position between the inner furnace tube and the outer furnace tube so that the inner furnace tube and the outer furnace tube can be coaxially aligned. The upper tube fixture includes a supporter, a positioner, and a control supporter and positioning. The first turntable and the second turntable. The support includes a first device and a support circle, and the positioner includes a second device and a positioning circle. The first device may be a first disk, and the second device may be a second disk. .Support circle • Can be a support rod, positioning circle can be a positioning rod. The support circle includes at least three 6 paper sizes applicable to Chinese National Standard (CNS) A4 specifications (210 X 297 male f) (Please read the precautions on the back before (Fill in this page) · -------- Order ——- 丨 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 504745 A7 ______B7__ V. Description of the invention () The supporting rod and the positioning circle also include at least three positioning rods. Second disk The first disc is above and connected to the same axis with the first disc. The first disc is located below the first disc and is connected to the same axis with the first disc to control the support circle. The second disc is located at the first Below the turntable and connected with the first turntable on the same axis, it is used to control the positioning circle. The support circle is located on the first disk. When the first turntable is rotated, the support cymbals can be spread outward or concentrically. Internal shrinkage. The positioning circle is located on the second disk. When the second turntable is turned, the support cymbals can be opened outwards in a concentric manner or contracted within the item. Install the inner furnace tube on the outer furnace tube in the original way. Inside. First, align the flange on the inner furnace tube with the gap on the bearing seat of the outer furnace tube to raise the inner furnace tube. When the position of the inner furnace tube is higher than the bearing seat of the outer furnace tube, rotate the inner furnace tube. Align the flange with the depression on the top surface of the bearing seat of the outer furnace tube, lower the inner furnace. Tube, place the flange in the depression and place the inner furnace tube on the bearing seat of the outer furnace tube, and preliminary The installation of the inner furnace tube was completed. Next, the upper control device is extended into the furnace tube, wherein the second disc is higher than the bottom of the inner furnace tube and the first disc is lower than the bearing seat of the outer furnace tube. Turn the first turntable on the upper tube fixture, so that the support circle on the first disk is spread outward to support the inner wall of the outer furnace tube. At this time, the central axis of the upper tube fixture and the outer furnace tube The central axis can be aligned coaxially. Then, turn the second turntable on the upper fixture to open the positioning circle on the second pan. If the inner furnace tube is not coaxially aligned with the outer furnace tube, the positioning circle will have one side and the inner one. The inner wall of the furnace tube contacts first. Continue to rotate the second turntable so that the positioning circle continues to expand outward. At this time, the side where the positioning circle first contacts the inner furnace tube will push the inner furnace tube toward the contact point method. 7 J ------------ ·- ------- tr --------- ^ Quotation (Please read the notes on the back before filling this page) The paper wattage is applicable to Chinese National Standard (CNS) A4 (210 X 297) (Mm) 504745 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Move the line until the positioning circle completely supports the inner wall of the inner furnace tube. 'Make the first disc and the inner furnace tube Coaxial alignment. Because the upper tube fixture has been aligned coaxially with the outer furnace tube, after this operation, the inner tube and the outer tube can be easily aligned coaxially. Because the position parameter (X, Y) set by the robot arm can determine the distance between the wafer and the inner furnace tube wall, under the premise that the position of the inner furnace tube can be fixed, change the position parameter (X, Y) ) To control the uniformity of the formed silicon oxide layer is feasible. Use a series of experiments to find out the relationship between the change of the position parameter (X, Y) and the change of the uniformity of the silicon oxide layer formed on the wafer. For example, for each increase in the number of X, the The number obtained at the nine test points knows the amount of change in the thickness of the silicon oxide material in the tetraethoxysilane process. From the results of multiple experiments, the relationship between the change of the position parameter (X, Y) and the uniformity of the silicon oxide layer can be determined and a set of parameters T can be determined. After the test run (Test Run), this parameter T directly Correct the wafer position 'to make the silicon oxide layer more uniform. In addition, 'after having the fixture and parameter T on the inner furnace tube', a new calibration procedure can be provided. After preventive maintenance, the thickness of the silicon oxide layer in the tetraethoxysilane process can be uniformized quickly and easily. purpose. The standard process is as follows: First, the inner furnace tube is fitted into the outer furnace tube with the upper tube fixture of the inner furnace tube and the axis is aligned. Check whether the wafer boat is straight. If the wafer boat is straight, enter a set of position parameters (X, Y) and place the wafer into the wafer boat by the robot arm with this position parameter (X, Y). For straightness, adjust a level to make the boat straight. A test array was performed to deposit a silicon oxide layer. Check the uniformity of the silicon oxide layer on the wafer on the top of the wafer boat, and adjust 8 papers according to this number. Applicable to China National Standard (CNS) A4 specification (210 X 297 g) ------- -------------- Order --------- IAV. (Please read the notes on the back before filling this page) 504745 Λ7 B7 V. Description of the invention () Position parameters (X, Y). Check the uniformity of the silicon oxide layer on the wafer at the lower end of the wafer boat, and adjust the temperature block according to this number to make the heat flow more uniform. After such a calibration standard procedure, even a novice can quickly complete the calibration. The uniformity problem of the silicon oxide layer formed in the tetraethoxysilane process can be standardized, which greatly improves the stability of the process. Brief description of the drawings: Figure 1 is a schematic cross-sectional view of a conventional vertical furnace tube type low pressure chemical vapor deposition reactor; Figure 2A is a bottom schematic view of an outer furnace tube; Figure 2B is a first Bottom view of the inner furnace tube; Figure 3 shows the relative position of the wafer and the inner furnace tube and the thickness of the silicon oxide layer measured at each detection point; Figure 4 shows the provided by the present invention Fig. 5A and Fig. 5B are diagrams showing the operation method of the upper pipe fixture provided by the present invention; and Fig. 6 is a flowchart showing a standard operation procedure. Drawing number comparison explanation = 100: reactor 102, 200, 502: outer furnace tube 104, 210, 302, 500: inner furnace tube 9 i (Please read the precautions on the back before filling this page) Order --- ------ Line. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives This paper is printed to the Chinese National Standard (CNS) A4 specification (210 X 297 gf) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 504745 A7 B7 V. Description of the invention () 106: wafer boat 202, 504: carrier seat 204: notch 206: depression 212: flange 214: side wall 300: wafer 400 '510: upper tube fixture 402, 404, 512, 514: Discs 406, 522, 524: Positioning rods 408, 518: Support rods 410, 412, 516, 520: Turntables 414, 418: Tension springs 422, 424: Cams 426, shims 426, 428, 430: Shafts 432, 434: Transmission bearing 506, 508: Shaft center 526, 28: Arrow 530, 532: Inner side wall Detailed description of the invention = In view of the above background of the invention, regarding the homogenization process of the silicon oxide layer, the paper size applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) • ϋ n ei t— an un nv ϋ ni an · fli · ϋ n · n an ni— Γ ^ tn HI ai · — n · fl · — · ϋ · 1_1 I _ t Dong (Please read the notes on the back before filling out this page) 74 04 7 7 Λ Β Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Explanation of the invention () The problems encountered, the present invention provides an inner furnace tube upper fixture, which can easily align the inner and outer furnace tube bases coaxially, and can achieve the result of forming a uniform oxide layer. In addition, a set of parameters T can show the relationship between the position parameters (X, Y) set by the robot arm and the uniformity of the silicon oxide layer, so that the correction of the position of the wafer can be standardized. In addition, a new calibration procedure can be provided by using the fixture and parameter τ on the inner furnace tube, and the purpose of uniformizing the thickness of the silicon oxide layer in the tetraethoxysilane process can be achieved quickly and easily after preventive maintenance. . Embodiment 1 In order to make the upper tube fixture of the inner furnace tube provided by the present invention more clever, a preferred embodiment is provided as follows: Please refer to FIG. 4, which is a diagram showing the provided by the present invention. Inner furnace tube upper pipe fixture 400 is suitable for correcting the relative position between the inner furnace tube (not shown in the figure) and the outer furnace tube (not shown in the figure) so that the inner furnace tube and the outer furnace tube can be coaxial. alignment. The upper fixture 400 includes a disk 402, 404, a positioning rod 406, a support rod 408, a turntable 410, 412, a tension spring 414, 418, a cam 422, 424, a washer 426, a shaft 428, 430, and a transmission bearing 432 , 434. The disk 402 is located above and connected to the disk 404, and has the same axis 401 as the disk 404. The turntable 412 is located below the disc 404 and connected to the disc 404, and has the same axis 401 as the disc 404. The turntable 412 is connected via a shaft 430 and a cam 424 to control the support rod 408. The shaft 430 has a shaft center 401. Turntable 410 is located below turntable 412 and I ----------- scorpion ------- 丨 order --------- line (please read the precautions on the back before filling in this Page) This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 g) 504745 A7 B7 5. Description of the invention () It is connected to it and has the same axis 401 as the turntable 412. The turntable 410 is connected via a shaft 428 and a cam 422 to control the positioning lever 406. The shaft 428 has a shaft center 401. The support rod 406 is located on the disk 402 and is connected to the cam 422 via a transmission bearing 434. When the turntable 410 is rotated, the cam 422 is simultaneously rotated through the shaft 428, and the cam 422 drives the positioning rod 406 through the transmission bearing 434 to expand outward or contract inward in a concentric manner. The turntable 412 is located below and connected to the disk 404, and has the same axis 401 as the disk 404. The turntable 412 is connected via a shaft 430 and a cam 424 to control the support rod 408. The shaft 430 has a shaft center 401. The support rod 408 is located on the disk 404 'and is connected to the cam 424 via a transmission bearing 432. When the turntable 412 is rotated, the cam 424 is simultaneously rotated by the shaft 430, and the cam 424 drives the support rod 4Ό8 to expand outward or retract inwardly in a concentric manner via the transmission bearing 432. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page)-the wire positioning rod 406 and the support rod 408 have tension springs 414 and 418 connected to the discs 402 and 404 respectively . The tension springs 414 and 418 are suitable as buffers when the positioning lever 406 and the support lever 408 are spread outward or contracted inward. Further, the positioning rod 406 and the support rod 408 have pads 426 at the ends, respectively. Because the material of the positioning rod 406 and the supporting rod 408 is metal, the function of 426 is that when the positioning rod 406 and the supporting rod 408 are in contact with the inner and outer furnace tube walls (not shown in the figure), they act as a cushioning anti-slip pad to avoid When the positioning rod 406 and the supporting rod 408 are in contact with the inner and outer furnace tube walls, they may slide or scratch the furnace tube wall. Please refer to Figures 5A and 5B for the operation method of the upper management fixture. Please refer to Figure 5A first, and place the inner furnace tube 500 on the supporting base 504 of the outer furnace tube 502. The flange (not shown) of the inner furnace tube 500 is placed on the outer furnace. National Standard (CNS) A4 Specification (210 X 297 Meals) 504745 A7 B7 V. Description of the Invention () The inner tube of the furnace tube was initially completed within the depression (not shown) of the tube 502 bearing seat 504 500 installation operations. It can be seen from Fig. 5A that the axis 506 of the inner furnace tube 500 and the axis 508 of the outer furnace tube 502 are misaligned and shifted to the right. Next, the upper control device 510 is extended into the outer furnace tube 502. The dial 512 of the upper control device 510 is higher than the bottom of the inner furnace tube 500 and the disc 514 is lower than the bearing seat of the outer furnace tube 502. 504. Turn the turntable 516 on the upper tube fixture 510, so that the support rod 518 on the dial 514 is spread outward to support the inner wall of the outer furnace tube 502 'at this time' The axis 508 of the furnace tube may be coaxially aligned. Then 'turn the turntable 520 on the upper tube fixture 510, so that the positioning rods 522, 524 on the disk 512 are spread outward in the directions of arrows 526, 528, respectively.内 side wall 530. When the positioning rod 522 continues to extend outwards', the positioning rod 522 will push the inner furnace tube 500 to move in the direction of arrow 526 until the support rod 524 supports the inner wall 532 of the inner furnace tube 500, please refer to FIG. 5B. This aligns the disk 512 coaxially with the inner furnace tube 500. Because the upper tube fixture 510 has been coaxially aligned with the outer furnace tube 502, after such operations, the inner and outer furnace tubes can be easily aligned coaxially. Embodiment 2 After providing an inner furnace tube upper jig, the inner furnace tube can be positioned, and the position where the robotic arm can be placed on the wafer can be adjusted and controlled. 13 This paper size applies to Chinese national standards (CNS ) A4 specification (210 X 297 male t) ------------ • Lu (Please read the precautions on the back before filling this page) Order --------- Wire Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau and printed by the Consumer Cooperatives of the Ministry of Economic Affairs and the Ministry of Economic Affairs. Printed 504745 by the Consumer Cooperatives of the Ministry of Economic Affairs. A set of parameters T is determined by the relationship of the silicon layer uniformity. After having two tools of upper fixture and parameter T, a standard operating procedure (SOP) can be provided, which can easily solve the problem of the uniformity of the silicon oxide layer formed by the tetraethoxysilane process, and can greatly improve the process. The stability. Therefore, the present invention provides a standard operating procedure, which is suitable for quickly achieving the stability and uniformity of the tetraethoxysilane process after the furnace tube is preventively maintained. This standard process can be programmed using a microprocessor. Please refer to FIG. 6, which is a flowchart showing standard operating procedures. First, step 600 first aligns the inner and outer furnace tubes by the method described in Example 1, and inputs a set of position parameters (XI, Y1). The robotic arm sets the wafer according to a set of input position parameters (XI, Y1). Put the crystal boat into the inner furnace tube. Step 602 determines whether the boat is straight. If the wafer boat is not straight, the level adjustment is performed in step 604 and then proceeds to step 606 to start the process of depositing a silicon oxide layer in the tetraethoxysilane process. If the crystal boat is straight, it proceeds directly to step 606 to start the tetraethoxysilane process to deposit a silicon oxide layer. Please continue to refer to Figure 6. After the deposition of the silicon oxide layer in the tetraethoxysilane process is completed, proceed to step 608. Measure the thickness of the oxide cut layer at nine detection points on the wafer to obtain a set of data A. A set of data B is obtained from the thickness of the silicon oxide layer at the same position between the wafers. Go to step 610, input data A, and the microprocessor will adjust the position parameter from (XI, Y1) to (X2, Y2) according to the data A and parameter T. Next, proceed to step 612, input data B, and the microprocessor will determine whether the thickness of the silicon oxide layer is the same at the same position between the wafers at the lower end of the wafer boat. If the uniformity is not good, proceed to step 614, where the micro 14 < nnn ϋ n 1 «nnninn · n ϋ nnu 1 · # 1 One: 口 V« nnn ϋ n (Please read the precautions on the back before filling this page) Line-This paper applies the national standard (CNS) A4 standard (210 X 297 mm) 504745 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () The processor will adjust the temperature plate to the wafer with a thinner layer of oxide sand according to data B to complete the standard operating procedures . If the uniformity is good, go to step 6U to complete the standard operating procedure. According to this standard procedure, when a silicon oxide layer having a thickness of 2000 angstroms is deposited in a tetraethoxy sand factory process, the standard deviation of the uniformity of the oxidized sand waste on the same wafer is reduced from 30 angstroms to 40 angstroms to 10 Angstroms to 20 Angstroms. When the thickness of the silicon oxide layer was deposited by the tetraethoxysilane process, the standard deviation of the uniformity of the silicon oxide layer on the same wafer decreased from 20 to 25 angstroms to W to 15 angstroms. In addition, please refer to the following table. The following table uses the same deposition furnace tube and wafer boat. After two preventive maintenances, the conventional method and the standard procedures disclosed in the present invention are used to separately perform the silicon tetraethoxylate cutting process. The layer uniformity is adjusted, and then CP 値 and cPk 値 are obtained in the whole working cycle. Among them, 1 means using the conventional method and 2 is using the standard procedures disclosed in the present invention. Cp is the process accuracy (Capability of?! ^ (^ 丨 011) and Cpk is the process capability index. Generally speaking, the Cp and CPk A higher 表示 indicates a better uniformity of the silicon oxide layer formed by the tetraethoxysilane process. Table 1 1 2 Percent increase Cp 2.09 2.58 23.4 Cpk 2.08 2.30 10.6 According to the data in Table 1, a standard operating procedure is provided according to the present invention. It can indeed quickly achieve the stability and uniformity of the tetraethoxysilane process. 15 This paper size applies to China National Standard (CNS) A4 specification (21 × X 297 mm) I ---------- ---------- ^ --------- ^ (Please read the notes on the back before filling this page) 504745 A7 B7 V. Description of the invention () It is understood that the above descriptions are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application of the present invention; any other equivalent changes or modifications made without departing from the spirit disclosed by the present invention should be Included in the scope of patent application below. * Nnnu ftis 9f nnnnn · i nn ϋ n an i ^ Jw tnn IV nnt (Please read the notes on the back before filling in this page) Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Online Economics 16 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)