503490 _案號 89111069__年月曰__修正 _ 五、發明說明（1) 【發明領域】 本發明是有關於一種半導體製程設備，且特別是有關 於一種晶圓清洗裝置與清洗之方法。 【發明背景】 依據現今的半導體製程技術，每一片晶圓，都需經過 數百個步驟方可完成。而其中晶圓清洗製程是最頻繁且最 繁瑣的。其包括SCI去除不良粒子及酸性物質· SC2去除金 屬污染；以及純水（DI water)的清洗。通常，此種清洗機 台被稱為酸驗槽（Wet Bench)。習用技術是整批晶圓（約 2 4〜7 2片），依序經過不同的鹼槽、酸槽、純水槽、旋乾 槽處理。 變小’習用技術面對兩 寸將使得機台體積變 台設計極浪費製造成 晶圓的方式將使得每片 生交錯污染的問題。 浸泡於鹼性化學液體、 再經南速旋乾去除晶圓 。為了解決批次處理造 不一的缺點。近年來， δ月參閱圖一。此處理單 隨著晶圓尺寸變大，元件尺寸 個課題亟待解決：（1)·大的晶圓尺 大’在寸土寸金的潔淨室，這種機 本 （2 )·元件尺寸變小，批次處理 晶圓的製程品質難以控制，容易發 【先前技術】 傳統酸鹼槽將整批的晶圓依序 酸性化學液體、純水中清洗，最後 表面的水分子，避免水痕影響良率 成的交錯污染，使得晶圓製程品質 發展出一處理單片晶圓的酸鹼槽， 503490 修正 案號 89111069 曰 五、發明說明（2) 晶圓的酸鹼槽，採模組設計，且一 槽，外觀與傳統酸鹼槽 ^ 一個分開的清洗 片晶圓，並配合低轉速的爪曰1 -人，、處理 均勻性。最後在旋乾槽中，利用Ϊ：：，轉，可增加清洗的 子。但是，這種#彳 八工吸附的载具去除水分 種方式，並未解決酸驗槽體積過大的缺點。 【發明發明目的】 本發明的目的，即在於想 洗裝置**法，可種半導體製程*晶圓清 ^ 套 了大巾田減少清洗設備所佔用的舻_ 為達到上述目白勺，本發明楹批一 J佔用的體積。 圓清洗裝置，此#署在雜士 ^ 種的半導體製程中晶 可變速之L包具承載晶圓，此 型載具係用以夹持晶圓，使晶圓在：以吸附載具。爪 =速真空吸附載具係後入於爪行：洗製程； 圓日守，此兩速真空吸附載具，可以升起 萄要旋乾晶 式將晶圓固定，並以高速旋轉的方式真空吸附的方 乾。由於本發明之可變速的載具，可以$曰曰圓上的液體旋 乾步驟因轉速不同的限制，各個清洗步驟^酸鹼清洗與旋 具’因此，本發明可以大幅節省機台的體二使用同一個载 口口此^卜，本發明之裝置並設有一組多警=〇 器丄使得清洗的氣體與液體，可經由該多总化學物質切換 換的在同一個清洗槽内分別由晶圓的正路化學物質切 洗’而得不必使用多個清洗槽，使得與背面運 縮小。 備的體積可以大: 第5頁 503490503490 _Case No. 89111069__ Year Month __ Amendment _ V. Description of the Invention (1) [Field of the Invention] The present invention relates to a semiconductor process equipment, and more particularly to a wafer cleaning device and a cleaning method. [Background of the Invention] According to the current semiconductor process technology, each wafer needs to go through hundreds of steps to be completed. Among them, the wafer cleaning process is the most frequent and tedious. It includes SCI to remove bad particles and acidic substances, SC2 to remove metal pollution, and pure water (DI water) cleaning. Generally, this type of cleaning machine is called Wet Bench. The conventional technology is a batch of wafers (about 24 to 72 pieces), which are sequentially processed through different alkali tanks, acid tanks, pure water tanks, and spin-drying tanks. The smaller size of the conventional technology will make the machine volume change. The design of the machine is extremely wasteful. The way of manufacturing wafers will make each piece staggered and contaminated. Immerse in alkaline chemical liquid, then spin dry to remove the wafer. In order to solve the disadvantages of batch processing. In recent years, δ months refer to Figure 1. As this wafer becomes larger in size, the issue of component size needs to be solved urgently: (1) · Large wafer size is large in a clean room where the earth is thick, and this machine (2) · the component size becomes smaller, The quality of batch processing wafers is difficult to control and easy to send. [Previous technology] Traditional acid-alkali tanks clean the entire batch of wafers in order of acidic chemical liquid and pure water, and water molecules on the final surface to avoid water marks from affecting yield The staggered pollution caused by the wafer process quality has developed an acid-base tank for processing a single wafer. 503490 Amendment No. 89111069 V. Description of the Invention (2) The acid-base tank of the wafer is designed with a module and The appearance of the tank is similar to that of a conventional acid-base tank. A separate cleaning wafer, with a low-speed claw of 1-person, handles uniformity. Finally, in the spin-drying tank, use Ϊ ::, turn to increase the number of cleaning children. However, this method of # 彳 八 工 adsorbed carrier removes water and does not solve the shortcomings of too large volume of the acid test tank. [Objective of the Invention] The purpose of the present invention is to clean the device ** method, which can be used for semiconductor processes * wafer cleaning ^ set a large towel field to reduce the occupation of cleaning equipment _ To achieve the above purpose, the present invention 楹Batch the volume occupied by J. A round cleaning device, which is used to carry wafers in a variety of semiconductor manufacturing processes. Variable-speed L packages carry wafers. This type of carrier is used to hold wafers so that the wafers are in: to attract the carrier. The claw = speed vacuum suction carrier is put into the claw line: washing process; Yuri Mori, this two-speed vacuum suction carrier can be lifted to spin-dry the crystal to fix the wafer, and vacuum at a high speed. Adsorbed square dry. Due to the variable-speed carrier of the present invention, the liquid spin-drying step on the circle can be limited due to different rotation speeds, and each cleaning step is ^ acid-base cleaning and spinner '. Therefore, the present invention can greatly save the machine body. Using the same loading port, the device of the present invention is provided with a set of multiple alarm devices, so that the cleaned gas and liquid can be switched by the multiple total chemical substances in the same cleaning tank respectively. The round positive path chemicals are cut and washed 'without having to use multiple cleaning tanks, making the back side transport smaller. Equipment can be large: Page 5 503490
為讓本發明之上述目的 1，下文特舉一較佳實施例 明如下： 特徵、和優點能更明顯易 並配合所附圖式，作詳細說 【發明說明】 明苓照第二圖，本發明之晶圓清洗裝置，係一可 1〇0承載晶圓103，並利用一組多管路 換為104、105選擇控制管路1〇6、1〇7、1〇8、1〇9、 1^0、111中用以清洗晶圓1〇3的氣體與液體，使得不同的 α洗液可以在同一個清洗槽内分別由晶圓丨〇3的正面盥背 面運作清洗。 〃 本發明之可變速之載具1〇〇包括一爪型載具1〇1與一高 h空吸附載具102。爪型載具1G1係用以夾持晶圓103， t圓103可以在低速下進行清洗製程，此爪型載具1〇1 ’ :5持晶圓的爪部可以為兩纟、四爪、六爪或八爪；而高 速f空吸附載具1〇2可以真空吸附晶圓1〇3 ]吏晶圓1〇3在 南速下旋轉，此載具1〇2係嵌入於爪型載具1〇1之中，並且 =以在爪型載具101之中沿著晶圓！ Q3表面之法線方向 活動，如第三圖所示。 、、，而用以清洗晶圓1 03的液體與氣體係管路供應裝置 3至晶圓103的正面與背面。管路供應裝置係由相的 :路m、1〇7、1〇8、109、110、⑴經由一個總管路輸勺 至晶圓103的正面與背面，並且各個管路的流量可以分別、 503490 ---奎唬89111069 年月日_修正 _ 五、發明說明（幻 "~ "一"" "" 由流 ϊ，制閥 1 i 3、！ j 4、j j 5、j! 6、j j 7、j j 8 來加以控 制。總官路的末端係藉由多管路化學物質切換器丨〇 4、1 〇 5 來選f ΐ洗液的配方，並且控制清洗液的清洗方式。換言 之’多管路化學物質切換器1〇4、1〇5可以作清洗配方的選 擇’並使得所選擇配方中的清洗液或氣體可以由控制控制 閥1^13、114、115、116、117、118的而將用以清洗的液體 或氣體輸送至總管路’並在總管路混合而輸送至晶圓丨〇 3 ，正面與背面。多管路化學物質切換器1〇4其清洗的方式 I以使清洗液以垂直輸送，或以逕向運動的方式輸送至晶 圓1〇3的正面與背面。 舉例來說，管路106、1〇7、1〇8、1〇9、11〇與ln係分 化气送去離子水、氮氣、氨氣、過氧化氮（Η2〇2)、氯 化sUHCl)與氟化氫（HF)氣體。 當要進行sci清洗製程時，先以爪型載1〇1具將晶圓 类ΓΛ定二f透過多管路化學物質切換器1 〇4進行清洗種 s、么込擇之後，官路中的流量控制閥11 2、11 3、11 5、11 6 I::適當”的去離子水、氨氣與過氧化氫在總管路溫 進行sC1清洗製程。 LG3的正面與背面同時 質切ί是欲進行Γ2清洗製程時，則在切換多管路化學物 貝切換器104之後，管路中的流量控制闊112、113、二物 二即會將適當比例的去離子水、氨氣與氯化 若是欲將晶圓表面上的氧面化與::上行清洗製程。 幻一虱化矽去除時，則可控制流In order to make the above-mentioned object 1 of the present invention, a preferred embodiment is exemplified as follows: Features and advantages can be more obvious and easy to match with the attached drawings, [Detailed description of the invention] Mingling according to the second figure, this The invented wafer cleaning device is capable of carrying wafers 103 at 100, and using a group of multi-pipes to replace 104 and 105 to select control pipes 10, 10, 10, 108, 10, The gas and liquid used to clean the wafer 103 in 1 ^ 0 and 111, so that different α washing liquids can be cleaned from the front and back surfaces of the wafer 3 in the same cleaning tank.变速 The variable speed vehicle 100 of the present invention includes a claw-shaped vehicle 101 and a high-h suction vehicle 102. The claw carrier 1G1 is used to hold the wafer 103, and the t-circle 103 can be cleaned at a low speed. This claw carrier 101 ′: 5 claws for holding wafers can be two, four, Six-claw or eight-claw; while the high-speed f air-suction carrier 102 can vacuum-adsorb wafers 103. The wafer 10 rotates at a south speed. This carrier 102 is embedded in a claw-type carrier. 1〇1, and = along the wafer in the claw carrier 101! Q3 surface moves in the normal direction, as shown in the third figure. The liquid and gas system pipe supply device 3 used to clean the wafer 103 to the front and back of the wafer 103. The pipeline supply device is composed of phases: road m, 107, 108, 109, 110, and 输 through a main pipeline to the front and back of wafer 103, and the flow of each pipeline can be 503490, respectively. --- kuei blame 8911069 _ revision _ five, description of the invention (phantom " ~ " 一 " " " " from the flow, the valve 1 i 3! J 4, jj 5, j ! 6, jj 7, jj 8 to control. The end of the official road is through the multi-line chemical switcher 〇 04, 105 to select the formula of ΐ washing liquid, and control the cleaning method of the washing liquid In other words, 'multi-channel chemical substance switchers 104 and 105 can be used as a cleaning formula choice' and the cleaning liquid or gas in the selected formula can be controlled by the control valve 1 ^ 13, 114, 115, 116, 117 and 118, the liquid or gas used for cleaning is sent to the main pipeline 'and mixed in the main pipeline to be conveyed to the wafer, front and back. The multi-line chemical switcher 104 is used for cleaning. The cleaning liquid is conveyed to the front surface and the back surface of the wafer 103 in a vertical direction or a radial direction. For example, pipelines 106, 107, 108, 10, 11, and ln-based differentiation gases send deionized water, nitrogen, ammonia, nitrogen peroxide (Η202), sUHCl chloride) With hydrogen fluoride (HF) gas. When the sci cleaning process is to be carried out, the claw type is used to carry 101 wafers ΓΛ 定 二 f through the multi-channel chemical substance switcher 104 to perform the cleaning process. Flow control valve 11 2, 11 3, 11 5, 11 6 I :: Appropriate "deionized water, ammonia and hydrogen peroxide are subjected to sC1 cleaning process at the main pipeline temperature. The front and back sides of LG3 are cut simultaneously. When the Γ2 cleaning process is performed, after switching the multi-channel chemical shell switch 104, the flow control in the pipeline is 112, 113, and the two substances will be appropriate proportions of deionized water, ammonia and chlorination. If you want to surface oxygen on the wafer surface and the :: upward cleaning process, you can control the flow when the silicon is removed.
第7頁 503490 —— 案號89111069 年月日 修正 五、發明說明（5) Ϊ控制閥11 8，以利用氟化氫去除之；若是要大致去除晶 圓上的水分子，則可以開啟流量控制閥i丨4，使管路丨〇7之 中的氮氣吹送至晶圓的表面。 以上述方法進行清洗製程時，爪型載具丨〇 1之轉速可 以控制在2000rpm左右以下，例如為400〜2〇〇〇rpm。在以清 $液清洗晶圓1 03之後，若要旋乾晶圓丨〇3上的殘餘液體 日寸，則可將高速真空吸附載具丨〇 2升起或降下爪型載具 10 1，使晶圓1 0 3改由高速真空吸附載具丨〇 2承載與固定， 並利用高速旋轉的方式，將轉速控制在4〇〇〜5〇〇〇 左 右，以藉由離心力將晶圓旋乾。 工 綜合以上所述本發明的優點如下： H於本發明之可變速的載具，可以克服酸驗清洗與 2步驟因轉速不同的限制，各個清洗步驟可使用同一個 ，因此，本發明可以大幅節省機台的體積，因此 大幅減少潔淨室的使用空間盥成本。 ' 明係採用單片晶圓處理，化學液體由外注 因此 >又有交錯污染的問題。 、（3>)本發明可利用高速真空載具真空吸附晶圓， 以碇乾晶圓上的殘餘液，因此可以避免水痕的產生。 雖然本發明 以限定本發明， 神和範圍内，當 已以一較佳實 任何熟習此技 可作各種之更 施例揭露如上 藝者，在不脫 動與潤飾，因 ’然其並非用 離本發明之精 此本發明之保Page 7 503490 —— Case No. 89111069 Amendment V. Description of the invention (5) Ϊ Control valve 11 8 to remove it with hydrogen fluoride; if you want to roughly remove water molecules on the wafer, you can open the flow control valve i丨 4, the nitrogen in the pipeline 丨 07 is blown to the surface of the wafer. When the cleaning process is performed by the above method, the rotation speed of the claw-shaped carrier 1 can be controlled below 2000 rpm, for example, 400 to 2000 rpm. After cleaning wafer 103 with clear solution, if you want to spin-dry the remaining liquid on wafer 〇〇3, you can raise or lower the high-speed vacuum suction carrier 〇〇2, the claw-shaped carrier 101, The wafer 103 was changed to be carried and fixed by a high-speed vacuum suction carrier 〇〇2, and the high-speed rotation method was used to control the rotation speed to about 400-500, so as to spin-dry the wafer by centrifugal force . The advantages of the present invention as described above are as follows: H. The variable-speed carrier of the present invention can overcome the limitations of the acid cleaning and the two steps due to the different speeds. Each cleaning step can use the same one. Therefore, the present invention can greatly Save the size of the machine, thus greatly reducing the use of space in the clean room. 'The Ming Department uses a single wafer process, and the chemical liquid is injected externally. Therefore, there is a problem of staggered contamination. (3) In the present invention, a high-speed vacuum carrier can be used to vacuum adsorb the wafer to dry out the residual liquid on the wafer, so the occurrence of water marks can be avoided. Although the present invention is limited to the present invention, within the scope of the gods, when a person who is familiar with this technique can make various modifications, it can be disclosed as an artist, without moving and retouching, because 'it is not used to separate The essence of this invention
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503490 _案號89111069_年月日__ 圖式簡單說明 【圖式之簡單說明】 弟^一圖 習知之晶圓清洗糸統不意圖。 第二圖 本發明之晶圓清洗系統於清洗晶圓時的示意 圖。 第三圖 習知之晶圓清洗系統於旋乾時的示意圖。 【圖號的簡單說明】 100 載具 101 爪型載具 10 2 高速真空吸附載具 103 晶圓 104 載具上方的多管路化學物質切換器 10 5 載具下方的多管路化學物質切換器 10 6 純水（DI water)入口 107 N2 入口 108 NH3 入口 109 H2 02 入口 110 HC1 入口 111 HF 入口 112 載具下方的多管路化學物質切換器流量控制閥 113 純水流量控制閥 114 N2流量控制閥 116 H2 02流量控制閥 117 HC1 流量控制閥503490 _Case No.89111069_ 年月 日 __ Brief description of the drawings [Simplified description of the drawings] Brother ^ one picture The conventional wafer cleaning system is not intended. Second figure The schematic diagram of the wafer cleaning system of the present invention when cleaning a wafer. The third figure is a schematic diagram of a conventional wafer cleaning system during spin-drying. [Simplified description of drawing number] 100 carrier 101 claw carrier 10 2 high-speed vacuum adsorption carrier 103 wafer 104 multi-channel chemical substance switcher above the carrier 10 5 multi-channel chemical substance switcher below the carrier 10 6 DI water inlet 107 N2 inlet 108 NH3 inlet 109 H2 02 inlet 110 HC1 inlet 111 HF inlet 112 Multi-line chemical switcher flow control valve under the vehicle 113 Pure water flow control valve 114 N2 flow control Valve 116 H2 02 Flow control valve 117 HC1 Flow control valve
第10頁 503490 案號89111069_年月曰 修正 圖式簡單說明 118 HF 流量控制閥 liBi 第11頁Page 10 503490 Case No. 89111069_Year month and month Amendment Brief description of drawings 118 HF flow control valve liBi Page 11