TW503459B - Magnetoresistive structure and process for fabricating same - Google Patents

Abstract

Magnetoresistive materials can be grown overlying a semiconductor substrate (22) by first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Description

503459 A7 B7 V. Description of the invention (1

This patent application filed a US patent application on July 24, 2000, and the patent application number was 09/624699. ^ Invention, The present invention is generally related to a magnetoresistive device and a manufacturing method thereof. In particular, the present invention is related to a giant giant magnetoresistive device and a manufacturing method thereof, and even, the invention is a single-chip integrated giant giant magnetism containing a semiconductor substrate. The structure and method of the resistance material are related. BACKGROUND OF THE INVENTION Electrical impedance in a class of materials called perovskite is reduced by the occurrence of a magnetic field nearly 10,000 times. This effect, known as colossal magnetoresistance (CMR), occurs at a temperature of approximately 250 K, where the electrical impedance of the material drops suddenly. The center of each cubic perovskite-type structure of widely known CMR materials (for example, a combination of lanthanum, calcium, manganese, and oxygen) contains a manganese atom. However, in recent years, CMR has been found in other composites, such as pyrochlore, chalcogenides spinel, and silver chalcogenide. Because CMR materials have a very strong response to magnetic fields, they are often used to make excellent magnetic field sensors, among other applications, for use in computers (such as 'read / write to a computer drive' magnetic head). Information is stored on computer drives in subtle magnetized areas. To retrieve the information, the read head detects the magnetized area on the rotating disk and changes its electrical impedance accordingly. Magnetic heads that use magnetoresistance operate faster and better than traditional, inductive read heads, thus allowing the amount of information stored on the disk to be increased. For example, a drive with a CMR material head can store approximately one per drive Sixteen billion bits of information. -4-This paper size applies to China National Standard (CNS) A4 (210X297 mm)

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503459 A7 B7 V. Description of the invention (3) Fig. 1 shows a schematic sectional view of a part of a magnetoresistive structure 20 according to a specific embodiment of the present invention. The magnetoresistive structure 20 includes a single crystal substrate 22, a containing buffer layer 24 containing a single crystal material, and a magnetoresistive material layer 26. In this context, the term "single crystal" should have a meaning commonly used in the semiconductor industry. The term "single crystal" shall represent materials that are single crystals or substantially single crystals, and shall include materials with a relatively small number of defects (such as dislocations commonly found in substrates of silicon or germanium silicide or mixtures, etc.), as well as the semiconductor industry A stupid layer of this type of material often found in. According to a specific embodiment of the present invention, the structure 20 further includes an amorphous interface layer 28 between the substrate 22 and the receiving buffer layer 24. The structure 2Q may further include a template layer 30 between the containing buffer layer 24 and the magnetoresistive layer 26. As explained in detail below, the template layer helps start the growth of the magnetoresistive layer on the containment buffer layer. The amorphous intermediate layer helps to reduce the strain on the containment buffer layer, and thereby assists the growth of a high crystalline quality containment buffer layer. According to a specific embodiment of the present invention, the substrate 22 is a single crystal silicon wafer, preferably a large-size single crystal silicon wafer. The wafer may be a Group IV material of the periodic table, and is preferably a Group IVA material. Examples of Group IV semiconductor materials include silicon, germanium, mixed silicon and germanium, mixed silicon and carbon, mixed silicon, germanium and silicon, and the like. The substrate 22 is preferably a wafer containing stone or germanium, and is preferably a high-quality single crystal silicon wafer as used in the semiconductor industry. The receiving buffer layer 24 is preferably a single crystal oxide or nitride material epitaxially grown on the base substrate. According to a specific embodiment of the present invention, the amorphous intermediate layer 28 is grown on the substrate 22 and is located between the substrate 22 and the growing receiving buffer layer 24 by oxidizing during the growth of the receiving buffer layer 24. Substrate-6- This paper size applies to China National Standard (CNS) A4 (210 X 297.mm)

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503459 A7 B7 V. Description of the invention (6) Preferred template for single crystal CMR layer. Fig. 2 shows a schematic sectional view of a part of a magnetoresistive structure 40 according to another embodiment of the present invention. The structure 40 is similar to the magnetoresistive structure 20 described above, except that an additional buffer layer 32 is interposed between the buffer layer 24 and the magnetoresistive material layer 26 of the preferred single crystal CMR. Specifically, an additional buffer layer is located between the template layer 30 and the cover CMR material layer. When the containing buffer layer cannot properly match and cover the single crystal magnetoresistive material layer, the additional buffer layer formed by the single crystal oxide is used to provide lattice compensation. Figure 3 shows the achievable relationship of the thickness of the growing crystal layer with high crystal quality as a function of the mismatch between the lattice constants of the main crystal and the growing crystal. Curve 42 is the limit of high crystalline quality materials. The area from curve 42 to the right indicates that these layers are not insignificant. Due to the lattice matching, infinite thickness and high-quality epitaxial layers can be grown on the main crystal. As the lattice constant mismatch increases, the thickness of the high-quality crystal layer can be reduced rapidly. For example, as a reference point, if the lattice constant mismatch between the main crystal and the growth layer exceeds about 2%, a single crystal epitaxial layer exceeding about 20 nm cannot be achieved due to high-density dislocation defects. Fig. 4 shows a principle diagram of a magnetoresistive structure 50 according to another embodiment of the present invention. The structure 50 includes a single crystalline semiconductor substrate 52 such as a single crystalline silicon wafer including a region 53 and a region 54. The electronic components indicated by dashed line 56 will be formed in at least a portion of area 53 using conventional silicon device processing techniques commonly used in the semiconductor industry. Electronic components 56 may be resistors, capacitors, active semiconductor components such as diodes or transistors, or integrated circuits such as complementary metal oxide semiconductor (CMOS) integrated circuits-9-paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 503459 A7 B7 V. Description of invention (7) Road. An isolation material layer 58 such as a silicon dioxide layer may cover the surface of the electronic component 56 ° region 54. The isolation material 58 or any other layer that is formed or precipitated in the region 53 during processing of the component 56 is removed so that the region 54 Provides a bare silicon surface. It is well known that bare silicon surfaces are highly reactive, and natural silicon oxide layers can form quickly on bare surfaces. A barium or barium and oxygen layer will precipitate on the natural oxide layer on the surface of the area 54 and chemically react with the oxidized surface to form a first template layer (not shown in the figure). According to a specific embodiment of the present invention, a single crystal oxide layer 62 is formed by a molecular beam epitaxial growth method to cover the template layer. The sinker includes reactants of barium, barium, titanium, and oxygen on the template layer to form a single crystal oxide layer 62. First, during the deposition, it is best to maintain the partial pressure of oxygen close to the minimum required to fully react with lithium or barium and titanium to form a single crystal lithium titanate layer or a single crystal barium titanate layer. The oxygen partial pressure is then increased to provide an oxygen overpressure and allow the single crystal oxide layer 62 in which oxygen is normally grown to diffuse. The oxygen diffused through the titanate layer chemically reacts with silicon on the surface of the region 54 to form a silicon oxide non-crystalline layer 61 at the interface between the silicon substrate and the single crystal oxide. According to a specific embodiment of the present invention, the method for terminating the precipitation of the single crystal oxide layer 60 is to precipitate the second template layer 60 of Ba-O, Sr-0, Ca-O, or Pb-O. Then, for example, a single crystal CMR material magnetoresistive layer 64 is deposited by a molecular beam epitaxial growth method to cover the second template layer. According to another specific embodiment of the present invention, the single crystal containing buffer titanate layer and the silicon oxide layer are exposed to an annealing treatment, so that the titanate and the oxide layer are -10- This paper size applies to the Chinese National Standard (CNS) A4 size (210 X 297 mm)

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An amorphous oxide layer is formed (not shown). A magnetic sensor indicated by a dashed line 68 is usually formed on at least a portion of the layer 64. According to a specific embodiment of the present invention, the sensor 68 may include a magnetic memory reading device or an impedance head for detecting a magnetized area on the information disk. The sensors 68 may be connected to each other by themselves (not shown in the figure), or the conductor indicated by the line 70 may be formed to facilitate the electric light-weight assembly 5 $ and the sensor 68 to build an integrated device in this way. The integrated device It includes at least one component formed in a silicon substrate and a sensor device formed in a magnetoresistive material layer. Although the exemplified structure 50 is a structure formed on a silicon substrate 52 and has a strontium (or barium) titanate layer 62 and a preferred single crystal CMR layer 64, it may be described elsewhere in this publication Or other single crystal substrates, oxide layers and magnetoresistive material layers widely known in the industry to make similar devices. Please refer to FIGS. 1 and 2 again. The substrate 22 is a single crystal substrate such as a single crystal silicon substrate. The crystal structure of a single crystal substrate is characterized by a lattice constant and a lattice direction. In a similar method, the containing buffer layer 24 is also a single crystalline material 'and the crystal lattice of the single crystalline material is characterized by a lattice constant and a crystal orientation. The holding buffer layer and the single crystal substrate must be closely matched, or one crystal direction must be rotated toward the other crystal direction to achieve the general lattice constant matching. In this context, "substantially equal" and "substantially matched" indicate that there are sufficient similarities between the lattice constants and that a high-quality crystalline layer can be grown on the base layer (for example, in the range of 2%). According to a specific embodiment of the present invention, the substrate 22 is a single crystalline silicon wafer with a direction of (100) or (111), and the containing buffer layer 24 is a lithium barium titanate layer-11-This paper is applicable to China Standard (CNS) A4 specification (210 X 297 mm) 503459 A7 B7 5. Description of the invention (9) (for example, SrzBa ^ TiC ^, where z is in the range of 0 to 1). The way to achieve a substantially matching lattice constant of the two materials is to rotate the crystal direction of the titanate material by 45 ° with respect to the crystal direction of the silicon substrate wafer. In this example, if the thickness is thick enough, the silicon oxide layer included in the amorphous intermediate layer 28 structure is used to reduce the strain of the titanate single crystal layer because the strain of the titanate single crystal layer will cause the main silicon wafer Does not match the lattice constant of the growing titanate layer. As a result, according to a specific embodiment of the present invention, a high-quality, thicker single crystal layer titanate layer can be achieved. Please refer to Figs. 1 and 2 again. Layer 26 is a single crystal CMR material layer with better epitaxial growth. The crystalline material is characterized by its lattice constant and crystal orientation. According to a specific embodiment of the present invention, the lattice constant of the layer 26 is different from the lattice constant of the substrate 22. In order to achieve a better single crystal layer for epitaxial growth with high crystal quality, the containing buffer layer must have high crystal quality. In addition, in order to achieve the layer 26 having a high crystal quality, it is desirable that the main crystal (in this case, the main crystal is a single-crystal-receiving buffer layer) and the lattice constant of the growing crystal are substantially matched. With the correct selection of materials, the crystal constant of the growing crystal will be rotated relative to the main crystal direction, so the lattice constants can be roughly matched. In some cases, a crystalline buffer layer between the main crystalline oxide and the growing magnetoresistive layer can be used to reduce the strain of the growing magnetoresistive layer because the strain causes a small difference in the lattice constant. As a result, the best crystal quality can be achieved in growing the CMR layer (for example, a high crystal quality CMR layer can provide a greater percentage change). Fig. 5 shows a schematic sectional view of a part of a magnetoresistive structure 72 according to a further embodiment of the present invention. The magnetoresistive structure 72 is similar to the magnetoresistive structure 20 described above, except that a synthetic semiconductor layer 74 will be epitaxially grown to cover the magnetoresistive layer 26 to -12. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) C) Staple

k 503459 A7 B7 V. Description of the invention (11) In the body layer (the specific embodiment is not shown in the figure). Fig. 6 shows a schematic sectional view of a part of a magnetoresistive structure 78 according to another embodiment of the present invention. The structure 78 is similar to the magnetoresistive structure 72 described above, except that the synthetic semiconductor layer 74 is juxtaposed with the magnetoresistive layer 26. The method of forming the magnetoresistive layer 26 is substantially the same as that described above. The template material of the template layer 30 is appropriately selected to prepare the epitaxial growth magnetoresistive layer 26. Once the layer 26 has been grown, a portion of the engraved layer is exposed to the layer 24. On the exposed area, a selective epitaxial growth of a suitable synthetic semiconductor material (including any material as described above) is performed to form the semiconductor layer 74. Alternatively, because the thermal budgets of the synthetic semiconductor material and the magnetoresistive material are substantially the same, the order of the precipitation layers may be reversed (eg, the semiconductor layer 74 may be precipitated, then the magnetoresistive layer 26 may be etched, and then the magnetoresistive layer 26 is grown). The method of manufacturing a magnetoresistive structure such as the structure shown in Figs. The method begins by providing a single crystal semiconductor substrate including silicon or germanium. According to a preferred embodiment of the present invention, the semiconductor crystal substrate is a silicon wafer having a (100) direction. The substrate is preferably oriented with the axis at most about 0.5 ° from the axis. At least a part of the semiconductor substrate has a bare surface, but other parts of the substrate may surround other structures, as described below. In this context, the term " bare " means that part of the surface of the substrate has been removed to remove oxides, contaminants or other heterogeneous materials. It is well known that bare silicon is highly reactive and easily forms natural oxidation. The term "naked" encompasses such natural oxides. It is also possible to intentionally grow thin silicon oxide on a semiconductor substrate, however such growth oxides are not necessary for the method according to the invention. For epitaxial growth of single crystals -14- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 503459 A7 B7 V. Description of the invention (12) The oxide layer to cover the single crystal substrate must be removed first An oxide layer to expose the crystal structure of the base substrate. The following method is best achieved by a molecular beam epitaxy (MBE) method, although other epitaxial growth methods may be used in accordance with the present invention. Natural oxides are removed by first thermally precipitating a thin layer of strontium, barium, a combination of lithium and barium or other alkaline earth metals or alkaline earth metals in an MBE device. In the case of rhenium, the substrate is then heated to approximately 800 ° C to allow lithium to react chemically with the natural silicon oxide layer. Lithium is used to decompose silicon oxide, leaving a non-oxidized silicon surface. The resulting surface includes strontium, oxygen, and silicon, and presents a neat 2x1 structure. The neat 2x1 structure forms a template for the orderly growth of a monocrystalline oxide overlay. The template provides the necessary chemical and physical properties to build up a crystal-grown overlay. According to an alternative embodiment of the present invention, the natural silicon oxide can be converted and the substrate surface can be prepared to grow an early crystalline oxide layer by immersing a substrate such as an oxide chain, a barium oxide chain, or an oxide on the substrate surface at a low temperature by M BE. An alkaline earth metal oxide such as barium then heats the structure to about 800 QC. At this temperature, the solid state reaction between lithium oxide and natural silicon oxide results in the reduction of natural silicon oxide, leaving a neat 2x1 structure with lithium, oxygen, and silicon on the substrate surface. Again, a template is formed in this manner to subsequently grow an ordered single crystal oxide layer. According to a specific embodiment of the present invention, after removing silicon oxide on the surface of the substrate, the substrate is cooled to a temperature in the range of about 200 to 800 ° C, and lithium titanic acid is grown on the template layer by molecular beam epitaxial growth. Salt layer. The MB E method starts with the opening shutter in the MBE device. The paper size is -15. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 503459 A7 B7 V. Description of the invention ( 13) Expose lithium, titanium and oxygen sources. The ratio of strontium to titanium is approximately 1: 1. The oxygen partial pressure was initially set to a minimum value to facilitate the growth of the putative strontium titanate at a growth rate of about 0.3 to 0.5 nm per minute. After the initial growth of strontium titanate, the oxygen partial pressure is increased to approximately the initial minimum. Oxygen overpressure can cause amorphous silicon oxide to grow at the interface between the base substrate and the growing lithium titanate layer. The growth of the silicon oxide layer is due to the diffusion of oxygen through the growing lithium titanate layer to the surface of the base substrate where the oxygen reacts with the silicon. Lithium titanate grows into ordered single crystals and has a crystal orientation rotated 45 ° relative to the base substrate with a neat 2x1 crystal structure. Otherwise, the lithium titanate layer may have strain, which is caused by a slight mismatch in the lattice constant between the silicon substrate and the growing crystal, and the intermediate layer of amorphous silicon oxide can reduce such strain. For example, the thickness of the accommodating buffer layer is in the range of about 2 nm to 100 nm, and is preferably greater than about 5 nm. The thickness of the oxide stone non-crystalline intermediate layer is in the range of about 0.5 nm to 5 nm, and preferably it is about 1.5 nm to 2.5 nm. After the strontium titanate is grown to the desired thickness, the single crystal strontium titanate is then covered with a template layer to promote subsequent growth of the desired magnetoresistive material epitaxial layer. After forming the template, a magnetoresistive material (e.g., CMR) is then grown by MBE in a similar manner as described above. By the method described above and adding an additional buffer layer precipitation step, the structure shown in Fig. 2 can be formed. Before the single crystal magnetoresistive layer is precipitated, a buffer layer covering the template layer is formed. If the buffer layer is a superlattice (for example, (LaMn03) 3 / SrMn03)), such a superlattice can be precipitated on the template as described above by, for example, MBE. Examples of other suitable buffer layers -16- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) binding

503459 A7 B7 5. Description of the invention (14) Including SrMn03 and LaMn03. The method described above illustrates a method for forming a magnetoresistive structure by a molecular beam epitaxial growth method, wherein the semiconductor structure includes a silicon substrate, a cover oxide layer, and a single crystal magnetoresistive layer. It is also possible to use chemical vapor deposition (CVD), metal organic chemical vapor; metal organic chemical vapor deposition (MOCVD), migration enhanced epitaxy (MEE), atoms Atomic layer epitaxy (ALE), physical vapor deposition (PVD), 4D science, J; chemical solution deposition (CSD), pulsed laser; pulsed laser deposition; PLD) and so on. In addition, by a similar method, other single crystal containing buffer layers can be grown, such as soil test metal titanate, soil test metal salt, soil test metal salt, alkaline earth metal button salt, alkaline earth metal. Vanadates, alkaline earth metal ruthenates, alkaline earth metal sharps, oxidized titanites such as alkaline earth metal tin-based perovskite, lanthanum aluminates, lanthanum oxides Thorium and thorium oxide. In addition, by similar methods such as MBE, other Group III-V and II-VI single crystal synthetic semiconductor layers can also be deposited to cover the single crystal magnetoresistive layer. Each variation of the magnetoresistive material and the single crystal oxide containing buffer layer uses an appropriate template layer to facilitate the growth of the magnetoresistive layer. In the foregoing specification, the invention has been described with reference to specific embodiments. However, those skilled in the art should understand the various modifications and contents of the present invention. -17- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ❿ Binding

Line B7 5. The description of the invention (15) is easy to modify without departing from the scope and spirit of the invention provided by the patent application examples below. Accordingly, the description and drawings are to be regarded as illustrative, and not as restrictive, and all such modifications are within the scope of the present invention. Advantages, other advantages, and problem solutions for specific embodiments have been described. However, any advantage, advantage, and solution that may cause or become more significant, advantage, advantage, problem solution, and any element should not be interpreted as a key, necessary item, or basic function or element of any or all difficult cases. As used herein, the terms "including", "including" or any other variation thereof are used to encompass non-proprietary inclusions such that a method, method, article, or device that includes a list of elements includes not only those elements, but also It also includes other methods not explicitly listed or such methods and methods

Claims (1)

AB c D No. '0 9 Ο 1 1 7 9 Ο 6 Patent application: In the text, please amend the patent scope (August 91) 6. Scope of patent application 1. A magnetoresistive device structure, including: a single crystal A semiconductor substrate, a single crystal insulating material layer, which is epitaxially grown to cover the substrate; and a magnetoresistive material layer, which is epitaxially grown, to cover the single crystal insulating material layer. 2. The structure according to item 1 of the patent application scope, wherein the substrate comprises silicon. 3. The structure according to item 1 of the patent application scope, wherein the single crystalline insulating material layer comprises a material selected from the group consisting of a metal oxide and a metal nitride. 4. The structure of item 3 of the scope of patent application, wherein the single crystalline insulating material layer comprises a material selected from the group consisting of alkaline earth metal acetic acid salt, soil test metal silicate, soil test Metal salt, metal test salt, metal test salt, metal test ruthenium, metal test niobate, osmium perovskite, lanthanum aluminate, lanthanum osmium oxide, oxidation, GaN and Nitride. 5. The structure of claim 3, wherein the magnetoresistive material layer includes a manganite perovskite. 6. The structure of claim 3, wherein the magnetoresistive material layer includes a material having an (AxBi.dCOs composition, where A is selected from the group consisting of lanthanum and ', and B is selected from the group consisting of 勰, Barium, calcium, and lead, and X ranges from 0 to 1, and C is selected from Mn, (MnyCo! · Y) (y is greater than 0 and less than or equal to 1), and (MnzNh-zKz Group greater than 0 and less than or equal to 1) O: \ 72 \ 72423-910802.DOa 5 ~ 1 ~ This paper size applies to China National Standard (CNS) A4 (210X 297 mm) A8 B8 For example, the ^ r hibiscus # 8. 9 · layer of the scope of the patent application, to cover the single knot margin; / structure further includes-template such as the structure of the scope of the patent application, the template layer includes A layer containing 0 to terminate the single crystalline insulating material layer. The structure of item 8 of the patent application, wherein the template layer is as thick as 10 monomolecular layers. 10.1 The structure of item 9 of the scope of patent application, the structure further includes-non-day-to-day emulsions, which are formed under the single crystalline insulating material layer. U. The structure of item No. 丨, the step of riding structure includes a non-crystalline emulsion, which is formed under the single crystalline insulating material layer. 12. The structure as claimed in claim W, the structure further comprising an integrated logic element at least partially formed in the substrate. 13. The structure according to item 12 of the scope of patent application, the structure further comprising a magnetic sensor formed at least partially in the magnetoresistive material layer. 14. The structure of claim 13 in the patent application, wherein the magnetic sensor includes a memory element. 15. The structure according to item 13 of the scope of patent application, the structure further comprising an interconnection, which is formed and electrically interconnects the integrated logic element and the memory element. 16. The structure according to item 丨 of the scope of patent application, the structure further comprising a synthetic semiconductor layer formed to cover the magnetoresistive material layer. 17. If the structure of item 16 of the scope of patent application is applied, the structure further includes one to one. A semiconductor device formed in a semiconductor composite layer was scratched. -2-O: \ 72 \ 72423.910802.DOQ 5 This paper size is applicable to China National Standard (CNS) Α4 size (210 X 297 mm) 9 45 03 5 AB c D 6. Application for patent scope 18. If the scope of patent application The structure according to item 1, further comprising a synthetic semiconductor layer formed to cover the single-crystal insulating material layer. 19. The structure of claim 18, the structure further includes a semiconductor device formed at least partially in the synthetic semiconductor layer. 20. The structure of claim 1, wherein the magnetoresistive material layer includes a single crystalline layer. 21. The structure as claimed in claim 1, wherein the magnetoresistive material layer includes a material layer having an ordered single crystal structure. 22. A kind of integrated magnetoresistive device structure, including: a single crystalline silicon substrate; a CMOS circuit formed at least partially in the substrate; a single crystalline alkaline earth metal oxide layer which is epitaxially grown to cover the A part of the substrate; an amorphous silicon oxide layer formed under the single crystal alkaline earth metal oxide layer; a magnetoresistive material layer grown by stupid crystals to cover the single crystal earth metal oxide layer A magnetoresistive sensing device, which is at least partially formed in the magnetoresistive material layer; and an interconnect, which is electrically coupled to the CMOS circuit and the magnetoresistive sensing device. 23. The structure of claim 22, wherein the single crystal alkaline earth metal oxide layer includes SrgBa ^ TiOs, where the g value is in the range of 0 to 1. O: \ 72 \ 72423-910802.D0Q 5 ~ 3 This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm). The scope of patent application is 24. The structure of item 23 of the patent scope, where the list The crystalline soil metal oxide layer includes a layer having a thickness greater than about 5 nm. 25. The structure of item 23 of the patent scope, wherein the magnetoresistive material layer includes-there is (AxBi.JCC ^ composite material, where a is selected from the group consisting of steel and Syria, B is selected from the group consisting of pins , Barium, word and Lai group 'Asia and X is in the range of 0 to 1, and C is selected from Mη, (MnyC〇1.y) (y is greater than 0 and less than or equal to 0 and (MnzNi ^ z A group consisting of greater than 0 and less than or equal to 1). Mold 26. The structure of item 25, such as a patent application, which further includes a plate layer to cover the single crystalline insulating material layer. Package 27. If applied The structure of the scope of the patent No. 26, wherein the template layer includes a B-0 layer to terminate the single crystalline insulating material layer. 28. The structure of the scope of the patent application No. 27, wherein the thickness of the template layer is i to 10 layers of monomolecular layers. 29. The structure of item 25 in the patent scope, wherein the template includes a single molecular layer with oxygen. 30. The structure of item 22 in the scope of patent applications, wherein the magnetoresistive material The layer includes a single crystalline layer. (2) The structure of claim 22 in patent claim, wherein the magnetoresistive material layer includes Material layer with ordered single crystal structure. Package 32. The structure of item 22 in the scope of patent application, wherein the magnetoresistive sensing device includes a magnetic memory reading or writing device. 33. = Please refer to item 22 in the scope of patent Structure, wherein the magnetoresistive material layer includes a material capable of exhibiting super giant magnetoresistive characteristics. 〇: \ 72 \ 72423-9 i〇80〇2.D〇a -4- 50345 (Os AB c D VI. Application Scope of patent 34. If the structure of the scope of patent application No. 22 is applied, the structure further includes a single crystal synthetic semiconductor material layer, which is epitaxially grown to cover the single crystal soil test metal oxide layer. 35. A kind of manufacturing magnetic resistance A method of device structure. The method includes the following steps: providing a semiconductor substrate having a first lattice constant and a first orientation; epitaxially growing a first single crystalline material layer to cover the substrate, the first layer having Strain force and is characterized by a second lattice constant; forming a strain force relaxation layer under the first layer to ease the strain force of the first layer; and epitaxial growth of a second layer to cover the first layer, This second layer can render Magnetoresistive characteristics, and the lattice matches the first layer. 3 6. The method of claim 35, wherein the step of epitaxial growth of a first layer includes epitaxial growth of a single crystal material, which has a relative to 37. The method of claim 36, wherein the step of epitaxially growing a first layer includes growing a single crystalline material including a first lattice constant, rotation, The lattice matching of the first lattice constant is within a range of about 2%. 38. The method of claim 35, further comprising forming a template layer to cover the first layer. 3 9. The method of claim 38, wherein the step of epitaxially growing a first layer includes selecting from MBE, MOCVD, MEE, CVD, O: \ 72 \ 72423-910802.DOC \ 5-5 This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) The method of grouping P / D, PLD, CSD and ALE performed the steps of crystal growth. 40. The method of claim 39, wherein the step of forming a first layer includes a step of growing-a layer, the layer comprising-selecting an insulating material selected from the group consisting of: Soil test metal titanate, soil test metal sawate, alkaline earth metal sulphate, alkaline earth metal button salt, alkaline earth, genus stern salt, soil test metal ruthenate, soil test sharp metal, containing genus Sulfur-based titanium alloys such as Laosu ore, steel salt, oxidizer and oxidizer. 41. The method of claim 39, wherein the step of growing a second layer of stupid crystals includes a method selected from the group consisting of MBE, MOCVD, ME £, CVD, D PLD, CSD, and ALE. Perform crystal stupid growth steps. 42. The method of claim 41, wherein the step of growing a second layer of vermicular crystals includes the step of growing a layer of magnetoresistive material, the layer of magnetoresistive material including (AxBi-x) C03 'where a Is selected from the group consisting of steel and steel, B is selected from the group consisting of gadolinium, barium, calcium, and lead, and χ is in the range of 0 to 1, and C is selected from Mn, (MnyCoi ) (y is greater than 0 and less than or equal to 1) and (MnzNiNz) (z is greater than 0 and less than or equal to 1 :). 43. The method of claim 42, wherein the step of forming a template layer includes the step of terminating the growth of the first layer, the first layer having 1 to 10 monomolecular layers of oxygen, and a member selected from titanium, A group of materials consisting of barium, calcium, and lead. 0: \ 72 \ 72423,9l〇8〇2.D〇a 5 6- ., Please refer to the method of the scope of patent No. 42. The method further includes a step of forming a hybrid sensor in the second layer. ./Please claim the method of the 35th item of the patent, which further comprises a step of forming a cmOs circuit in the substrate. Crystal • Patent! The method according to item 35, further comprising the step of a second single crystal layer, the third single crystal layer including a synthetic semiconductor material covering the second layer. If applying for the method of the 35th patent scope, the method further includes the steps of: removing a part of the second layer to expose a part of the first layer; and epitaxially growing a third layer, the first The three layers include a synthetic semiconductor material covering a part of the first layer. If the method of claim 35 is claimed, the method further includes the following steps: A cat grows a third single crystal layer every day, and the third sheet The crystalline layer includes a synthetic semiconductor material covering the first layer; and before the step of growing a second layer of stupid crystals, removing a portion of the third layer to expose a portion of the first layer. A method for manufacturing a magnetoresistive device structure, the method includes the following steps: providing a single crystalline silicon substrate; forming an integrated circuit at least partially formed in the silicon substrate; growing a single crystalline oxide layer, To cover the silicon substrate; O: \ 72 \ 72423-910802. DOO The paper size is applicable to Chinese national standards (C ^ 7a4 specifications χ public love) 503459 AB CD 6. The scope of application for patents is to grow the single crystal oxide layer In the meantime, an amorphous oxide layer is formed under the single crystalline oxide layer; the step of terminating the epitaxial growth of a single crystalline oxide is formed by forming a template layer; the epitaxial growth is a layer of a magnetoresistive material to cover the A template layer; forming a magnetoresistive device, which is at least partially formed in the magnetoresistive material layer; and forming an electrical interconnection, which is between the integrated circuit and the magnetoresistive device. ~ 5 0. If applied The method of item 49 of the patent, wherein the step of epitaxially growing a single crystalline oxide layer includes forming a method by a method selected from the group consisting of MBE, MOCVD, MEE, CVD, PVD, PLD, CSD, and ALE. The step of the SrgBa ^ TiOs layer, wherein the value of g is in the range of 0 to 1. 51. The method of claim 50, wherein the step of forming an amorphous oxide layer includes epitaxial growth of a single crystalline oxide The oxygen overpressure is maintained during the layer. 52. The method of claim 50, wherein the step of epitaxially growing a layer of the first magnetoresistive material includes, by selecting from the group consisting of MBE, MOCVD, MEE, CVD, PVD, PLD, CSD and ALE A method of epitaxially growing a layer containing AxBi-JCOs, where A is selected from the group consisting of lanthanum and ', B is selected from the group consisting of lithium, barium, calcium, and lead, and X In the range of 0 to 1, and C is selected from O: \ 72 \ 72423-910802.DOa 5 ~ 8 This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) 50345 (8 8 8 8 AB c D 6. The group of patent application scope Mn, (MnyCobyKy is greater than 0 and less than or equal to 1) and (MnzNiN Z) (z is greater than 0 and less than or equal to 1). 5 3. The method of claim 52, wherein the step of forming a template layer includes the step of terminating the growth of the single crystal oxide layer, the single crystal oxide layer having 1 to 10 monomolecular layers of oxygen, and A material selected from the group consisting of titanium, barium, ginger bow, and copper. O: \ 72 \ 72423-910802.DOC \ 5 ~ 9 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm)