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五、發明説明（1 經濟部中央標準局員工消費合作社印製 螢明領域 本發明係有關於一種用於氮化鈦（TiN)薄膜之奥諧電 子分光儀（AES)分析的基準能量設定方法，及ΉΝ薄膜與 含該TiN薄膜之半導體構件的分析方法。尤其是以aes對 半導體構件TiN薄膜中之氮元素(N)進行定性和定量分析。 相關技術之描述 金屬薄膜或金屬氮化物在半導體構件製造過程中常 被使用’因此為了建立適當之加工管理，發明適當方法以 分析金屬氮化物薄膜中之氮元素及金屬是必要的。 然而’在金屬氮化物薄膜形成過程完成前，不易對 氮元素進行分析，且由於TiN的鈦元素（Ti)峰及氮元素（N) 峰重疊，造成氮元素之定性及定量分析不易進行。因此需 要一種簡易的科技對N進行可靠的分析。 掃瞄式電子顯微鏡（SEM)通常被用於分析半導體構件 製程中的晶片，或檢驗奥諧分析中由樣品表面發射的二級 電子。穿透性電子顯徼鏡（TEM)亦被用於分析金屬樣品的 構造，如樣品之結晶構造等，其係以加速電子光束掃瞄樣 品並分析繞射等。 · * 以AES進行奥諧分析是一項熟習此項技藝者非常 解，而已商業化的技術。 奥諧分析意指利用AES及奥諧效應所進行的一種 析方法’其中奥諧效應係高能階原子以放出電子的方式 至低能階。也就是說，為了分析晶片的某個部分，若樣 上具某能階的電子被掃瞄到，激態原子將放出被稱為奥諧 了 分 躍 品 (請先閱#背面之注意事項再填寫本頁) • fm tn in m f . 訂^--- #. -4- 本紙張尺度適财_家縣（⑽）祕胁（2獻297公襲）. 502112 A7 B7 經濟部中央樣準局員工消費合作社印製 五、發明説明（2 ) 電子之類似X射線的二級電子。經由檢定奥諧電子的速度 或分布，可以測得該樣品之表面態，且特定原子之存在及 其相對數量等亦可經奥諧電子能階之測量而探知。 然而，J· Vae· Sci. Technol· B4 (6)，Nov./Dec· (P.2792) 1986揭露，氮化鈦（TiN)之N奥諧峰，383電子伏特，幾乎 和Ti之Ti奥諧峰及TiN(Ti + N)之Ti奥諧峰重疊，造成TiN 中氮元素（N)定量分析上的困難。J:Vac. Sei. TeehnQi. B6 (1)，Jan./Feb· (Ρ·54) 1988亦揭露，如同第〗圖（Ti標準材料） 及第2圖（丁^標準材料）所示，Ti+N之奥諧峰大約為38〇電 子伏特，即位於387電子伏特之Ti奥諧峰與位於379電子伏 特之N奥諧峰之和，而造成TiN<N分析上的困難。 此外，如第3圖及第4圖中，具以TiN/Ti薄膜作為障 蔽金屬薄膜之半導體構件光譜之濺射時間及強度相互關係所不，重疊的N及Ti峰造成>|峰分離上的困難，且以假想 數表示之N峰（箭頭所指）亦降低組成比例估算上之可信 度。 其間，由於以AES對除N以外之其他元素進行定量分 析被廣泛的使用，同時為改善半導體構件之生產力，使產 生對ΤιΝ中N之定量分析法進行開發的需求。 發明概诫 本桊月係提供_用於ΤϊΝ分析的基準能量設定方 法，其可有效避免相關習知技術中的限制或缺失等問題。 本發明宗旨為提供—種使用奥譜電子分光儀（AES)分 析TiN之基準能量設定方法。 (請先閲讀脅面之注意事項再填寫本頁) —V. Description of the invention (1. Field of printing fluorescent printing by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economics. The present invention relates to a method for setting a reference energy for the analysis of Austrian harmonic electron spectrometer (AES) for titanium nitride (TiN) films. And the analysis method of the ΉN film and the semiconductor component containing the TiN film. Especially, the qualitative and quantitative analysis of the nitrogen element (N) in the TiN film of the semiconductor component is performed by aes. Description of related technology It is often used during the manufacturing process. Therefore, in order to establish proper process management, it is necessary to invent appropriate methods to analyze nitrogen and metals in metal nitride films. However, it is not easy to carry out nitrogen analysis before the metal nitride film formation process is completed. Analysis, and because of the overlap of Ti and Ti peaks of TiN, the qualitative and quantitative analysis of nitrogen is not easy to perform. Therefore, a simple technology is needed to perform reliable analysis of N. Scanning electron microscope (SEM) is often used to analyze wafers in semiconductor component manufacturing processes, or to test samples from Austrian harmonic analysis. Emitted secondary electrons. Transmissive electron microscope (TEM) is also used to analyze the structure of metal samples, such as the crystalline structure of the sample, which is used to accelerate the electron beam to scan the sample and analyze the diffraction etc. AES is a commercial technique that is well understood by those skilled in the art. Olymmetry analysis means an analytical method using AES and the effect of Austrian harmonics. The way to emit electrons is to low energy levels. That is, in order to analyze a part of the wafer, if an electron with a certain energy level is scanned in this way, an excited atom will emit a so-called harmonic hopping product (please (Please read the notes on the back of # before filling out this page) • fm tn in mf. Order ^ --- #. -4- This paper is suitable for wealth _ Jiaxian (⑽) Secret threat (2 Xian297 public attack). 502112 A7 B7 Printed by the Consumer Cooperative of the Central Samples Bureau of the Ministry of Economic Affairs 5. Description of the invention (2) X-ray secondary electrons similar to electrons. The surface state of the sample can be measured by verifying the velocity or distribution of Austrian harmonic electrons, and The existence of specific atoms and their relative quantities, etc. It can be detected by the measurement of the energy level of the Austrian harmonics. However, J. Vae · Sci. Technol · B4 (6), Nov./Dec· (P.2792) 1986 revealed that the N-Olharmonics of titanium nitride (TiN) The peak, 383 electron volts, almost overlaps the Ti ortho peak of Ti and the Ti ortho peak of TiN (Ti + N), which makes the analysis of nitrogen (N) in TiN difficult. J: Vac. Sei. TeehnQi. B6 (1), Jan./Feb· (P · 54) 1988 also revealed that, as shown in Figure (Ti standard material) and Figure 2 (Ding ^ standard material), the Austrian harmonic peak of Ti + N is approximately 38 o-volts, that is, the sum of the Ti ortho-harmonic peaks at 387 electron volts and the N-ortho-harmonic peaks at 379 electron volts, causing difficulties in the analysis of TiN < N. In addition, as shown in Figures 3 and 4, the correlation between the sputtering time and the intensity of the semiconductor component spectrum with the TiN / Ti film as the barrier metal film is different. The overlapping N and Ti peaks are caused by the peak separation. The N peak (indicated by the arrow) represented by the imaginary number also reduces the reliability of the composition ratio estimation. In the meantime, the quantitative analysis of elements other than N by AES is widely used, and at the same time, in order to improve the productivity of semiconductor components, there is a need to develop a quantitative analysis method for N in TiN. Summary of the Invention This month is to provide a benchmark energy setting method for TN analysis, which can effectively avoid problems such as limitations or missing in related conventional technologies. The purpose of the present invention is to provide a reference energy setting method for analyzing TiN using an Austrian electron spectrometer (AES). (Please read the precautions before filling in this page) —
»1_…--i II =_三_ III 1- ............... 0 + ¾明之另一宗旨為提供 Δ 巧焚供種以AES基準能量設定 法为析含DN薄膜之半導體構件的方法。 根據本發明之具體及概括的目的，並為達成其優勢， aes基準此里①疋法包含以下步驟mES確定谓樣 品中的N峰（第—分析步驟）’·利用A E S確打i樣品中的T i 峰(第二分析步驟)；參照第一分析步驟之n峰及第二分析 步驟之Ti峰，分離㈣峰（峰分離步.驟）；參照峰分離步驟 之N峰及第二分析步驟之辦，找出未重疊的畔，以替⑽ 設定AES基準能量（基準能量設定步驟）。 本發明之使用AES之氮化鈦（TiN)分析法包含AES分 析之基準能階設定步驟，該步驟係有關於辨認出上述不和 鈦元素峰之動能相重疊的氮元素峰動能。 此外，本發明之使用AES之含ΉΝ薄膜之半導體構件 分析法包含AES分析之基準能階設定步驟，該步驟係有關 於辨涊出上述不和鈦元素峰之動能相重疊的氣元素峰動 能0 要強調的是上列概述及下列詳述都是用作範例及說 明’並希望為申請專利範園提供進一步的解釋。 篮式之簡要說名 在附圖中： 第1圖及第2圖表示使用傳統奥諧電子分光儀之TiN光 譜； 第3圖為使用傳統奥諧電子分光儀分析以TiN/Ti薄膜 作為屏蔽金屬層之半導體構件之濺射時間與強度相互關係»1_… --i II = _ 三 _ III 1- ............... 0 + ¾ Another purpose of the Ming is to provide Δ clever burning for seeding. The AES benchmark energy setting method is Method for analyzing semiconductor components containing DN film. According to the specific and general purpose of the present invention, and in order to achieve its advantages, the aes benchmark here ① The method includes the following steps mES to determine the N peak in the sample (the first analysis step) '· Use AES to confirm the T i peak (second analysis step); referring to the n peak of the first analysis step and the Ti peak of the second analysis step, separating the krypton peak (peak separation step. Step); referring to the N peak of the peak separation step and the second analysis step To find the non-overlapping bank, set the AES reference energy for you (reference energy setting step). The titanium nitride (TiN) analysis method using AES of the present invention includes a reference energy level setting step of AES analysis. This step is related to identifying the kinetic energy of the nitrogen element peak which does not overlap with the kinetic energy of the titanium element peak. In addition, the semiconductor component analysis method using the AES-containing thin film of the present invention includes a reference energy level setting step for AES analysis. This step is related to identifying the kinetic energy of the gas element peak that does not overlap with the kinetic energy of the titanium element peak. It is emphasized that the above summary and the following detailed description are used as examples and explanations', and hope to provide further explanation for patent application parks. The brief description of the basket type is shown in the drawings: Figure 1 and Figure 2 show the TiN spectrum using a traditional Austrian electron spectrometer; Figure 3 shows the analysis using a traditional Austrian electron spectrometer with a TiN / Ti film as a shielding metal Correlation between sputtering time and intensity of semiconductor components
DUZUJDUZUJ
的光譜圖； 第4圖為使用傳統奥諧電子分光儀分析以TiN/Ti薄膜 作為屏蔽金屬層之半導體構件之濺射時間與原子濃度相互 關係的光譜圖； 第5圖顯示使用本發明之奥諧電子分光儀之ΉΝ及 TaN光譜； 第6圖顯示第5圖光譜中TiN峰之微分； 第7圖為使用本發明之奥諧電子分光儀分析以ΉΝ/Ή 薄膜作為屏蔽金屬層之半導體構件之濺射時間與強度相互 關係的光譜圖；而 第8圖為使用本發明之AES分析以TiN/Ti薄膜作為屏 蔽金屬層之半導體構件之濺射時間與原子濃度相互關係的 光譜圖； 数—隹的具體膏施例之詳诫 現在將以較佳的具體實施例之相關附圖說明本發 明。 經濟部中央標準局員工消費合作社印製 根據本發明之用於TiN分析之奥諧電子分光儀（AES) 之基準能量設定方法，利用TiN樣品可由AES光譜測得贝 峰（第一分析步驟），且用Ti樣品可經AES光譜測得Ti·(第 二分析步驟）。然後，參照第一分析步驟之N峰及第二分 析步驟之Ti峰，分離出n峰（峰分離步驟）。再比較峰分離 步驟之N峰及第二分析步驟之Ti·，找出不重疊峰以 分離出用於AES分析之基準能量（基準能量設定步驟）。 換言之，N峰由TiN標準樣品首先確認（第一分析步 本紙張 502112 五、發明説明（) 鱗）’ Ti峰由Ti標準樣品確認（第二分析步驟），且N峰及Ti 峰被互相比較以找出與上述N峰不重疊之N峰，以決定用 於TiN薄膜中N分析之基準能量。 一般而言，由用於AES分析之TiN光譜分辨出N峰和Ti 峰是困難的，因為N峰及Ti峰幾乎互相重疊，由此觀之， 利用本發明之與僅含Ti樣品之Ti峰進行比較，以分離出N 峰為必需的。‘ 根據本發明之用於TiN薄膜分析之AES基準能量設定 法’動能分布自3 60至3 90電子伏特之N峰首先被檢定，且 第一分析與第二分析特別被完成於〇·2電子伏特/步驟之 AES能量鑑別率❹ 設定AES能量鑑別率於〇·2電子伏特/步驟可增加峰鑑 別率，使得峰及強度的確認可以容易地完成^ 第一分析和第二分析的峰都以強度或其對AES動能 質之微分質表示，且峰高或最大值及最小值可由此清楚判 斷。原子密度對高度之比值也可正確地計算。 經濟部中央標準局員工消費合作社印製 在峰分離步驟中，Ν峰值係以分離第二分析步驟之们 峰值獲得，該Ti峰值係來自第一分析步騾之Ν峰值。也就 是說，將TiN樣品中之Ti峰值自Ν峰值分離出來，並將ήν 樣品中之Τι峰由Ti + N峰分開，如此可獲得單獨的N峰。 然後，再自上述分離出之N峰選擇適當者，最後達成本發 明之目的’由TiN樣品之Ti+ N峰得到單獨的ν峰。 這時發現分析而得，和Ti峰重疊之贝峰的動能落在373 至383電子伏特之範圍内。Fig. 4 is a spectrogram for analyzing the relationship between the sputtering time and atomic concentration of a semiconductor component using a TiN / Ti film as a shielding metal layer using a conventional Austrian harmonic electron spectrometer; ΉN and TaN spectra of a harmonic electron spectrometer; Figure 6 shows the differentiation of TiN peaks in the spectrum of Figure 5; Figure 7 shows the analysis of semiconductor components using the ΉN / Ή film as a shielding metal layer using the Austrian harmonic electron spectrometer. The spectral diagram of the correlation between sputtering time and intensity; and Figure 8 is a spectrum diagram of the correlation between the sputtering time and atomic concentration of a semiconductor component using a TiN / Ti film as a shielding metal layer using the AES of the present invention; Detailed Instructions for Specific Paste Embodiments The present invention will now be described with reference to the accompanying drawings of preferred embodiments. The Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs printed the reference energy setting method of the Austrian Harmonic Electron Spectrometer (AES) for TiN analysis according to the present invention. The TiN sample can be used to measure the Beifeng from the AES spectrum (first analysis step). And Ti samples can be measured by AES spectroscopy (second analysis step). Then, referring to the N peak in the first analysis step and the Ti peak in the second analysis step, the n peak is separated (peak separation step). Then compare the peak N in the peak separation step with Ti · in the second analysis step to find non-overlapping peaks to separate the reference energy for AES analysis (reference energy setting step). In other words, the N peak is first confirmed by the TiN standard sample (the first analysis step of this paper 502112 V. Description of the invention () scale) 'The Ti peak is confirmed by the Ti standard sample (the second analysis step), and the N peak and the Ti peak are compared with each other In order to find the N peaks that do not overlap with the above N peaks, the reference energy for N analysis in TiN films is determined. Generally speaking, it is difficult to distinguish the N peak and the Ti peak from the TiN spectrum used for AES analysis, because the N peak and the Ti peak almost overlap each other. Therefore, using the Ti peak of the present invention and the Ti-only sample For comparison, it is necessary to isolate the N peak. 'Based on the AES reference energy setting method for TiN thin film analysis according to the present invention' The N peak with a kinetic energy distribution from 3 60 to 3 90 electron volts was first verified, and the first analysis and the second analysis were particularly completed at 0.2 electrons AES energy discrimination rate of volts / step ❹ Setting the AES energy discrimination rate to 0.2 electron volts / step can increase the peak discrimination rate, so that the confirmation of peaks and intensities can be easily completed ^ The peaks of the first analysis and the second analysis are both Intensity or its differential representation of the kinetic energy quality of AES, and the peak height, maximum value, and minimum value can be clearly judged from this. The ratio of atom density to height can also be calculated correctly. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs In the peak separation step, the N peak is obtained by separating the peaks of the second analysis step, and the Ti peak is derived from the N peak of the first analysis step. That is, the Ti peak in the TiN sample is separated from the N peak, and the Ti peak in the sample is separated by the Ti + N peak, so that a separate N peak can be obtained. Then, an appropriate one is selected from the N peaks separated above, and finally, the purpose of the present invention is to obtain a single v peak from the Ti + N peak of the TiN sample. At this time, it was found that the kinetic energy of the shell peak overlapping with the Ti peak fell within the range of 373 to 383 electron volts.
本紙張尺度適财關家縣（⑽} A7 B7Size of this paper: Shicai Guanjia County (⑽) A7 B7
經濟部中央襟準局員工消費合作社印製 尤其是選不和Ti峰重疊峰中之最高峰，該N峰容 易被確⑽，_§_其動能落在365至369電子伏特範圍内，特別 是367電子伏特。 進一步來說，由峰分離步驟所選出的N峰可在確認步 驟中進行再柄·，神料檢查財，用於娜 分析之基準能量設定_峰，是否如同蘭樣品的結果， 為真正的N峰。該確認步驟係以含·Ν化合物中不重疊的n 峰，與N峰及分離步騍中之N峰比較。可利用㈣化合物 為TaN。TaN為氮化组。鈕元素與鈥元素有相似的物理及 化子性質，歛之氮化物的問題來自於鈦峰與N峰重疊。 除此之外，如第5圖所示，TaN顯示出具相似動能範 圍的峰，在與TiN比較分析上非常有用。 此外，根據本發明，不與Ti峰相重疊的N峰之動能可 被選為基準能量以致於該N峰之選擇與分析為適當的。aes 分析之基準能量選擇範圍為自365至369電子伏特。 另一方面，根據本發明，分析含TiN之半導體構件為 t田的本發明之半導體構件分析其特徵在於選擇不與Ti 峰重疊的N峰之AES分析基準能量。用N分析為適當的且1^ 元素成份等可用N峰正確地估計。 AES分析之基準能量較佳的設定範圍為自365至369 電子伏特，且該半導體構件包括含TiN/Ti之屏蔽金屬薄 膜。同樣的，除包含以TiN/Ti作為金屬屏蔽薄膜之半導體 構件外，分析含TiN之半導體構件亦為適當的。 除此之外，經由製造含TiN/Ti金屬薄膜之過程，製 本紙張尺度遒用中_家標準（CNS ) A4_ (加靡公釐）Printed by the Consumer Cooperatives of the Central Government Bureau of the Ministry of Economic Affairs, especially the highest peak among the peaks that do not overlap with the Ti peak. The N peak can be easily identified, and its kinetic energy falls within the range of 365 to 369 eV, especially 367 eV. Furthermore, the N peak selected in the peak separation step can be re-processed in the confirmation step, and the material can be checked. The reference energy setting for the na analysis is the peak. Is the result the same as that of the blue sample? peak. This confirmation step is to compare the non-overlapping n peak in the compound containing N with the N peak and the N peak in the separation step. A fluorene compound is available as TaN. TaN is a nitriding group. The button element has similar physical and chemical properties as the element. The problem of converging nitrides comes from the overlap of the titanium peak and the N peak. In addition, as shown in Figure 5, TaN shows a peak with a similar kinetic energy range, which is very useful for comparative analysis with TiN. In addition, according to the present invention, the kinetic energy of the N peak that does not overlap with the Ti peak can be selected as the reference energy so that the selection and analysis of the N peak are appropriate. The baseline energy for aes analysis is selected from 365 to 369 electron volts. On the other hand, according to the present invention, the semiconductor component analysis of the present invention in which the TiN-containing semiconductor component is analyzed is characterized by selecting the AES analysis reference energy of the N peak that does not overlap the Ti peak. The N analysis is appropriate and the 1 ^ element composition and the like can be correctly estimated using the N peak. The reference energy for AES analysis is preferably set from 365 to 369 electron volts, and the semiconductor component includes a shielding metal film containing TiN / Ti. Similarly, in addition to semiconductor components containing TiN / Ti as the metal shielding film, analysis of semiconductor components containing TiN is also appropriate. In addition, through the process of manufacturing TiN / Ti-containing metal thin film, the paper size used in the paper is _Home Standard (CNS) A4_ (Plus mm)
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(#先閎讀背面之注意事項再填寫本頁) • I·……In mi _ ί 11 訂-- 502112 五、發明説明（7 ) 造含TiN/Ti/氧化物層/半導體基底是適當的。上述侧分 析亦被應用在具上述構造之多層媒組成的半導體構件，也 就是說’半導體構件之叫不需與辦重疊即可獲得，且 N原子數量可被正確估計。 另外，氧化物薄膜和Ή薄膜之交界面以矽化鈦形成， 此為熟習此項技藝者能輕易得知並了解的，且用於半導體 構件之Ν定量分析為適當的。 ‘ 現在開始，本發明之具體實施例將被詳述。企圖以 這些具體實施例展現本發明，本發明不應被認定為限於以 | 下具體實施例。 具體膏施例1 AES以含TiN及類似化學構造之TaN之晶片完成，分 丨 別採用U· S· A· PHI Com.之SAM 43〇〇，且動能範圍為36〇 至390電子伏特，結果示於第5圖。 如第5圖所示，TiN之峰及TaN之峰具備非常相似的 外形，且TiN峰中每一:Nf峰及Ti峰重疊於主峰之外的側峰。 上述侧峰可視為氮元素峰。 經濟部中央檬準局員工消費合作社印製 另外’第5圖各峰中TiN之主峰及側峰的微.分質示於 第 6 圖（TiN) ^ 第6圖中的峰高微分值與N數量成比例，即n數量可 由峰高確認。 具體實施命1 2 本分析係以與上述用於含TiN/Ti屏蔽層之半導體構 件之具體實施例相同的方式完成，且分布自365至370電子 _______ -10- 本紙張尺中賴家鮮（CNS ) A4_ ( 21()><297公羡〉 ' - 發明説明（8 ) 伏特之動能範圍内之N分光峰被設定為基準能量，該結果 示於第7及8圖。第7圖顯示強度與濺射時間之相互關係， 而第8圖顯示原子密度與濺射時間之相互關係。 第7及g圖之分析結果顯示，N峰選自動能約368電子 伏特，並與第3及4圖中傳統上選自約379電子伏特之^^峰 比較，每一元素之分光峰皆可清楚地分離，並可由此正確 话算比值。 * 如上所述，氮元素峰可以不與鈦元素峰重疊。意指 相較於如第3圖與四描述之分析條件設於動能範圍約379電 子伏特之傳統AES所得氮元素峰位於鈦元素峰内並以假想 數表示之結果，上述分析結果可被用在經由選出對應之原 子光譜，分離出樣品的原子。而且，使用本發明之方法所 獲得之上述分析結果可用於估算樣品之組成比率且具高度 真實性。 第7圖顯示得自AES之以TiN/Ti為屏蔽金屬薄膜之半 導體構件之光譜，以其濺射時間與強度之相互關係表示， 而第8圖顯示得自AES之以TiN/Ti為屏蔽金屬薄膜之半導 體構件之光譜，以其濺射時間與原子濃度之相·互關係表 示〇 利用本發明之分析方法，可合理分析氮化鈦薄膜中 之氮7C素，分析氮化鈦薄膜本身，及分析具氮化鈦薄膜之 半導體構件。亦可簡單並正確的分析氮元素使增進半導體 構件之生產力及品質。 熟習此項技藝者將可輕易地發現額外的優點及改 502112 A7 B7 五、發明説明（9 ) 方式。所以本發明之廣義方面不限於此處所展示及描述的 特定細節及代表構件。因此，各種不同之改變可在不逸脫 出如所附申請專利範圍及其等之等效物所定義之基本發明 概念之精神或範圍下被做出。 111 — I i In I • c請先聞讀背面之注意事項再填寫本頁) 訂 > Ml··— —m ttEH 一 ·丨丨！ 經濟部中央樣隼局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210><297公釐）·! (#Read the precautions on the back before filling this page) • I · …… In mi _ 11 Order-502112 V. Description of the invention (7) The production of TiN / Ti / oxide layer / semiconductor substrate is appropriate. The above-mentioned side analysis is also applied to a semiconductor component composed of a multilayered medium having the above-mentioned structure, that is, the name of a 'semiconductor component' can be obtained without overlapping, and the number of N atoms can be correctly estimated. In addition, the interface between the oxide thin film and the hafnium thin film is formed by titanium silicide, which can be easily known and understood by those skilled in the art, and is suitable for the quantitative analysis of N of semiconductor components. ‘Now, specific embodiments of the present invention will be described in detail. In an attempt to demonstrate the invention in these specific embodiments, the invention should not be construed as being limited to the following specific embodiments. Specific Paste Example 1 AES was completed with a wafer containing TiN and TaN with similar chemical structure, respectively using SAM 4300 of U · S · A · PHI Com. And the kinetic energy range was 36-390 electron volts. Results Shown in Figure 5. As shown in Figure 5, the peaks of TiN and TaN have very similar shapes, and each of the TiN peaks: the Nf peak and the Ti peak overlap side peaks other than the main peak. The above-mentioned side peak can be regarded as a nitrogen element peak. The Consumer Cooperatives of the Central Bureau of the Ministry of Economic Affairs of the People's Republic of China printed the difference between the main peak and side peaks of TiN in each of the peaks in Figure 5. The differential quality is shown in Figure 6 (TiN). The number is proportional, that is, the number of n can be confirmed by the peak height. Specific implementation 1 2 This analysis is performed in the same manner as the specific embodiments of the semiconductor component containing a TiN / Ti shielding layer described above, and is distributed from 365 to 370 electrons _______ -10- (CNS) A4_ (21 () > < 297 public envy> '-Description of the invention (8) The N-ray spectral peak in the kinetic energy range of volts is set as the reference energy, and the results are shown in Figs. 7 and 8. Fig. 7 The figure shows the correlation between intensity and sputtering time, and Figure 8 shows the correlation between atom density and sputtering time. The analysis results of Figures 7 and g show that the N peak selection can automatically reach about 368 electron volts, and it is in line with that of Figure 3 And Figure 4 is traditionally selected from a peak of about 379 electron volts, and the spectral peaks of each element can be clearly separated, and the ratio can be correctly calculated from this. * As mentioned above, the nitrogen element peak may not be different from titanium. The element peak overlaps, which means that compared to the conventional AES with a kinetic energy range of about 379 electron volts as set out in the analysis conditions described in Figures 3 and 4, the nitrogen element peak is located within the titanium element peak and expressed as an imaginary number. The above analysis results Can be used to select the corresponding atomic spectrum, Atoms isolated from the sample. Furthermore, the above analysis results obtained using the method of the present invention can be used to estimate the composition ratio of the sample with a high degree of authenticity. Figure 7 shows a semiconductor obtained from AES with a TiN / Ti shielding metal film The spectrum of a component is represented by the correlation between its sputtering time and intensity. Figure 8 shows the spectrum of a semiconductor component obtained from AES with TiN / Ti as a shielding metal thin film. Interrelationship expressions. Using the analysis method of the present invention, the 7C nitrogen in titanium nitride films can be reasonably analyzed, the titanium nitride film itself, and semiconductor components with titanium nitride films can be analyzed. Nitrogen can also be analyzed simply and correctly Elements can improve the productivity and quality of semiconductor components. Those skilled in the art will easily find additional advantages and change 502112 A7 B7 V. Description of the invention (9). So the broad aspect of the invention is not limited to what is shown and described here Specific details and representative components. Therefore, various changes can be made without departing from the scope of the attached patent application and its equivalents. It is made under the spirit or scope of the basic concept of the invention 111 - I i In I • c matters, please read the back of the note and then heard Complete this page) book >. Ml · · - -m ttEH a · Shushu! Printed by the Consumer Cooperatives of the Central Bureau of Samples of the Ministry of Economic Affairs This paper is sized to the Chinese National Standard (CNS) A4 (210 > < 297 mm)