五、發明説明（1 ) 發明背i 本發明有關於拋光物件，特別是預熱一拋光塊以便黏著 一物件，例如半導體晶圓。 ~ 傳、’克之機械化學拋光方法係用以拋光半導體晶圓之單一 表面，其利用一適當之拋光裝置，例如圖4a所示之裝置， 日曰圓130附著至拋％塊12〇，抛光塊12〇旋轉安裝在該裝置中 。晶圓轉動並向下倚靠著拋光布或墊126，其安裝在一轉臺 124上。例如鹼性膠體矽土之研磨液體128在拋光操作中= 加至拋光墊126，故拋光晶圓13〇之單一表面。 經濟部中央標準局員工消費合作社印製 每片晶圓一般以三步驟之程序附著至拋光塊12〇。蠟122 藉由旋轉被覆施加在拋光塊一平坦表面上，該旋轉被覆之 動作係將拋光塊置於旋轉裝置一卡盤中，當拋光塊轉動時 施加蠟。在第二個步驟中，拋光塊移至一加熱裝置以便加 熱’加熱裝置通常包括一加熱板或蒸氣型式加熱器，拋光 塊在加熱過程中置於該加熱板上，蒸氣型式加熱器之環狀 物支撑著拋光塊外側邊緣並將拋光塊底邊曝露至蒸氣。本 發明特別有關於加熱板之加熱裝置。拋光塊在加熱後移至 一壓力機，以便將晶圓130壓在已軟化之蠟122上（圖讣顯示 拋光塊上具有複數個晶圓）。 由於拋光塊由厚陶瓷材料製成，例如礬土或碳化石夕，其 爲不良之熱導體，故不易使拋光塊加熱至正確之溫度以及 形成均勻之溫度。將較厚之拋光塊加熱至相當高之溫度耗 時甚久，惟該溫度能夠適當的將晶圓附接至拋光塊。此外 ，由於拋光塊受熱底面與未受熱頂面之間的溫差造成拋光 -4- 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） ''一-~' — A7 B7 2 五、發明説明（ 塊趣曲（圖3所示），其延長拋光塊加熱所需之時間，並使拋 光塊不均勻受熱以及拋光塊頂面溫度不均勻。拋光塊12〇頂 面不均勻之溫度使拋光塊上蠟122之硬度不均勻，並使附著 土拋光塊之日日圓典法平置於表面上，不均勻之溫度亦在蠟 中產生凹卩曰。此外，爲加速拋光塊之加熱，加熱器所設定 又溫度高於拋光塊所需之溫度。因此，若拋光塊置於加熱 σ。上時間過久’抛光塊將過熱而使晶圓無法平置於表面上 。此非平坦之配置使晶圓之平坦度以及邊緣輾平特徵在拋 光過程中變得品質較差。 螢__1^要 在本發明數個目的中，吾人注意到在半導體晶圓黏著至 抛光塊之前對拋光塊均勻加熱之裝置及方法；此一裝置及 万法對施加至拋光塊之蠟均勻加熱；此一裝置及方法可快 I的加Α拋光塊，此一裝置及方法可防止拋光塊迦曲；此 裝置及方法有利於晶圓平坦安裝在拋光塊上；以及此一 取置及方法有助於晶圓拋光後之平坦度及厚度一致性。 簡而言之，本發明之裝置在欲拋光之物件塗蠟安裝至拋 光塊之別對拋光塊加熱且包括一加熱器及--^盤，加熱器 用以加熱拋光塊’卡盤一表面支撑著拋光塊。卡盤之構造 可知抛光塊之底邊固定在該表面上，以防止拋光塊龜曲以 及促進拋光塊均勻且加速之加熱。 在本發明另一概念中，裝置包括一力口熱器及一眞空卡盤 ，加熱器用以加熱拋光塊，眞空卡盤包含一用以支撑著拋 光塊之表面以及一凹槽以便抽離空氣而固定拋光塊至該表 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 497128 A7 五、發明説明（3 面，其可防止拋光塊翹曲以及促進拋光塊均勻且快速之加 熱。 在本發明另一概念中，半導體晶圓黏著至拋光塊之前對 抛光塊加熱足万法包括將抛光塊置放在一加熱器上，故拋 光塊之受熱表面區域與加熱器接觸，以及操作加熱器對抛 光塊加熱。拋光塊之溫度受到監控，並.對應著拋光塊之溫 度調整與加熱器接觸之抛光塊受熱表面區域。 本發明其他目的及特徵爲本案説明書一部分且揭示於 后。 、 畺簡單説明 訂 圖1爲本發明加熱裝置概要視圖，顯示其拋光塊卡盤之内 部元件； 圖2爲卡盤之頂視圖； 圖3馬卡盤及拋光塊之視圖，其放大顯示翹曲現象； 圖4a爲單一表面拋光裝置之概要視圖；與 圖4b爲拋光塊之概要視圖，晶圓安裝在拋光塊上。 對應之參數表示數個視圖中對應之零件。 經 濟 部 t 央 標 準 局 員 工 消 費 合 作 社 印 製 較隹實tun 現在參見圖式，特別是圖1，本發明之加熱裝置整體以參 數11表不，其構造可對一拋光塊13加熱，拋光塊13具有一 平坦辰面14a以及一平行之平坦頂面14b。加熱裝置之眞空 卡盤15用以在加熱時固定著拋光塊13，卡盤15包含一頂板 17以支撑拋光塊i3。加熱裝置亦包括一加熱元件I%即一加 熱器），其配置在卡盤15中以便加熱拋光塊。本發明未限定 :紙張尺度 -6- 經濟部中央標準局員工消費合作社印製 497128 A7 ______B7 五、發明説明（4 ) 於一眞空卡盤，其他型式之卡盤亦可加以利用，例如卡盤 可包括機械式夾具以便接合拋光塊之周邊邊緣。 卡盤15之頂板17呈平坦狀且包含一周邊凹槽21(參見圖2) ’凹槽2 1靠近卡盤之周邊以便相對定位拋光塊1 3之邊緣23 。管件25將凹槽21連接至電磁閥27，當閥將管件25開啓時 ’ 2氣藉由一泵或眞空源經過凹槽抽離而在拋光塊13下方 形成眞空，以便將拋光塊固定至頂板17，因此可防止拋光 塊在加熱過程中翹曲並促進拋光塊均勻且快速之加熱。 如圖1所示’裝置11另包括一升降機構2 9，其用以將拋光 塊13舉離頂板17。升降機構29之三個升降栓件3 1係伸展經 過卡盤15中開口 35，以便接觸並頂起拋光塊13，升降栓件 利用底座33在底部支撑。可垂直移動之活塞桿件37附接至 底座33，以便升降栓件3丨上下移動。活塞桿件37自汽缸％ 處伸展’汽缸39藉由管件41連接至電磁閥27。電磁閱27之 開啓驅使空氣進入汽缸，並使活塞桿件37及拋光塊向上移 動至頂板17上方。拋光塊之位置宜略微在頂板17上方，即 在頂板17上方3mm處。多於或少於三個升降栓件皆可用以 支撑著拋光塊13，惟其以三個較佳。其他型式之升降機構 亦適用，其包含利用氣壓直接施加至拋光塊之升降機構。 卡盤15之材質爲鋁，加熱元件19位於卡盤中頂板π下方 ’並連接至適當之電源（圖中未顯示）。 高溫計45(通常爲溫度偵測器）用以感測表面上蠟料之 溫度，並將溫度資料傳遞至控制器47。適合之高溫計爲紅 外線輻射高溫計，其無須與蠟46接觸即可測知蠟之溫度。 (請先閲讀背面之注意事項再填寫本頁)V. Description of the invention (1) The invention relates to polishing objects, in particular, preheating a polishing block to adhere an object, such as a semiconductor wafer. ~ Mechano-chemical polishing method is used to polish a single surface of a semiconductor wafer. It uses a suitable polishing device, such as the device shown in Figure 4a. The Japanese yen 130 is attached to the polishing block 120. The polishing block 120 ° is installed in the device. The wafer rotates and leans against a polishing cloth or pad 126, which is mounted on a turntable 124. For example, the abrasive liquid 128 of alkaline colloidal silica is added to the polishing pad 126 during the polishing operation, so a single surface of the wafer 130 is polished. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Each wafer is generally attached to the polishing block 120 in a three-step process. The wax 122 is applied to a flat surface of the polishing block by a rotating coating. The operation of the rotating coating is to place the polishing block in a chuck of a rotating device, and apply wax when the polishing block rotates. In the second step, the polishing block is moved to a heating device for heating. The heating device usually includes a heating plate or a steam type heater, and the polishing block is placed on the heating plate during the heating process. The object supports the outer edge of the polishing block and exposes the bottom edge of the polishing block to steam. The present invention relates particularly to a heating device for a heating plate. After the polishing block is heated, it is moved to a press so that the wafer 130 is pressed against the softened wax 122 (Figure 具有 shows that the polishing block has a plurality of wafers). Since the polishing block is made of a thick ceramic material, such as alumina or carbide, which is a poor thermal conductor, it is not easy to heat the polishing block to the correct temperature and to form a uniform temperature. It takes a long time to heat a thicker polishing block to a relatively high temperature, but this temperature can properly attach the wafer to the polishing block. In addition, polishing is caused by the temperature difference between the heated bottom surface and the unheated top surface of the polishing block. -4- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) `` 一-~ '— A7 B7 2 5 Description of the invention (Fun Qu (shown in Figure 3), which prolongs the time required for the polishing block to heat up, and makes the polishing block unevenly heated and the temperature of the top surface of the polishing block uneven. The temperature of the top surface of the polishing block is uneven The hardness of the wax 122 on the polishing block is uneven, and the Japanese yen method is attached to the surface when the soil polishing block is attached. The uneven temperature also creates a depression in the wax. In addition, to accelerate the heating of the polishing block, The temperature set by the heater is higher than the temperature required for the polishing block. Therefore, if the polishing block is placed on the heating σ. If the time is too long, the polishing block will overheat and prevent the wafer from being flat on the surface. This non-flat configuration The flatness of the wafer and the edge rolling characteristics become poorer during the polishing process. Fluorescent__1 ^ In several purposes of the present invention, I have noticed that the polishing block is evenly heated before the semiconductor wafer is adhered to the polishing block. Device and method This device and method uniformly heat the wax applied to the polishing block; this device and method can quickly add the A polishing block, this device and method can prevent the polishing block from being curved; this device and method is beneficial The wafer is mounted flat on the polishing block; and this placement and method contributes to the flatness and thickness consistency of the wafer after polishing. In short, the device of the present invention is waxed and mounted on the object to be polished to the polishing. The block heats the polishing block and includes a heater and a plate. The heater is used to heat the polishing block. The surface of the chuck supports the polishing block. The structure of the chuck shows that the bottom edge of the polishing block is fixed on the surface. In order to prevent the polishing block from warping and promote uniform and accelerated heating of the polishing block. In another concept of the present invention, the device includes a force heater and an empty chuck. The heater is used to heat the polishing block. The polishing block is fixed to the table by supporting the surface of the polishing block and a groove to evacuate the air. -5- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 497128 A7 V. Description of the invention (3 surface It can prevent the polishing block from warping and promote uniform and rapid heating of the polishing block. In another concept of the present invention, heating the polishing block before the semiconductor wafer is adhered to the polishing block includes placing the polishing block in a heater. Therefore, the heated surface area of the polishing block is in contact with the heater, and the heater is operated to heat the polishing block. The temperature of the polishing block is monitored, and the heating surface area of the polishing block in contact with the heater is adjusted corresponding to the temperature of the polishing block. Other objects and features of the present invention are part of the description of this case and will be disclosed later. 畺 Brief description. Figure 1 is a schematic view of the heating device of the present invention, showing the internal components of the polishing block chuck; Figure 2 is a top view of the chuck; Figure 3 is a view of the chuck and polishing block, which shows the warping phenomenon in an enlarged view; Figure 4a is a schematic view of a single surface polishing device; and Figure 4b is a schematic view of a polishing block with a wafer mounted on the polishing block. The corresponding parameters represent the corresponding parts in several views. The Ministry of Economic Affairs and the Central Standards Bureau ’s consumer cooperative prints a more solid tun. Now referring to the drawing, especially FIG. 1, the heating device of the present invention is represented by the parameter 11 as a whole, and its structure can heat a polishing block 13, the polishing block 13 It has a flat surface 14a and a parallel flat top surface 14b. The chuck 15 of the heating device is used to fix the polishing block 13 during heating. The chuck 15 includes a top plate 17 to support the polishing block i3. The heating device also includes a heating element 1% (a heater), which is arranged in the chuck 15 to heat the polishing block. The present invention is not limited: paper size-6- printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 497128 A7 ______B7 V. Description of the invention (4) In an empty chuck, other types of chucks can also be used. For example, the chuck can be used A mechanical clamp is included to engage the peripheral edges of the polishing block. The top plate 17 of the chuck 15 is flat and includes a peripheral groove 21 (see FIG. 2). The groove 21 is close to the periphery of the chuck so as to position the edge 23 of the polishing block 13 relatively. The pipe fitting 25 connects the groove 21 to the solenoid valve 27. When the valve opens the pipe fitting 25, the 2 gas is evacuated through the groove by a pump or a vacuum source to form a hollow under the polishing block 13, so as to fix the polishing block to the top plate. 17, so it can prevent the polishing block from warping during the heating process and promote uniform and rapid heating of the polishing block. As shown in FIG. 1, the device 11 further includes a lifting mechanism 29 for lifting the polishing block 13 off the top plate 17. The three lifting bolts 31 of the lifting mechanism 29 are extended through the opening 35 in the chuck 15 so as to contact and lift up the polishing block 13, and the lifting bolts are supported by the base 33 at the bottom. A vertically movable piston rod member 37 is attached to the base 33 so that the lifting bolt 3 can move up and down. The piston rod member 37 extends from the cylinder%. The cylinder 39 is connected to the solenoid valve 27 through a pipe member 41. The opening of the electromagnetic reader 27 drives air into the cylinder, and moves the piston rod member 37 and the polishing block upward to the top plate 17. The position of the polishing block is preferably slightly above the top plate 17, that is, 3 mm above the top plate 17. More or less than three lifting bolts can be used to support the polishing block 13, but three are preferred. Other types of lifting mechanisms are also applicable, including lifting mechanisms that apply air pressure directly to the polishing block. The material of the chuck 15 is aluminum, and the heating element 19 is located below the top plate π in the chuck and is connected to an appropriate power source (not shown in the figure). The pyrometer 45 (usually a temperature detector) is used to sense the temperature of the wax on the surface and transmit the temperature data to the controller 47. A suitable pyrometer is an infrared radiation pyrometer, which does not need to be in contact with the wax 46 to measure the temperature of the wax. (Please read the notes on the back before filling this page)
497128 A7 B7 五、發明説明（5 ) 控制器47係一微控制器並用以接收來自高溫計化之溫度資 料（通系爲仏唬）’其控制著電磁閥27以便對應著溫度資料而 驅動眞空卡盤或升降機構。 經濟部中央標準局員工消費合作社印裂 在本發明一方法中，拋光塊13置於加熱表面之頂板17上 ，故拋光塊受熱之底面14a與頂板17接觸。蠟46在拋光塊13 置放於卡盤之前施加至抛光塊，眞空卡盤15操作將拋光塊 固足在頂板17上，故底面14a全部與頂板17接觸並均勾加熱 。換K，卡盤1 5可防止拋光塊13翹曲並使拋光塊與加熱 器接觸，因此拋光塊邊緣與中央之間無溫度差異存在。加 熱元件19操作使拋光塊13加熱，其操作溫度夠低且不會使 拋光塊13因“熱震”而受到損壞，但其溫度足以使拋光塊快 速的加熱。加熱元件之操作溫度界於1⑻與2〇〇。〇之間（212與 392 F之間），其以界於13〇與15〇。〇之間較佳（266與3〇2吓之 間）。南/皿计45操作以偵測頂面14b上虫鼠46之溫度，並將溫 度貧料傳遞至控制器47。控制器監控著溫度資料，並對應 著溫度資料而調整拋光塊13底面Ma與頂板17接觸之區域， 故蠟之溫度可保持在所需之溫度，其正負誤差範圍相當的 小，例如4°C(7°F)。舉例而言，設定一所需之溫度，將眞空 卡盤所固定之拋光塊加熱至所需之溫度，當蠟之溫度高於 所舄/m度4 C時，控制器47使閥27停止抽吸眞空及倚靠著拋 光塊，並驅使升降機構將拋光塊頂離頂板丨7，故可使拋光 塊13底面14a不與頂板Π接觸。若蠟之溫度低所需溫度4〇c 時，控制器驅動著閥將拋光塊下降置於頂板上，以及再次 抽吸眞空將拋光塊固定至頂板17。其操作至較小之眞空作 -8 · 本紙張尺度適用中國國家標準（CNS ) A4規格（2i"〇x 297公釐）------ 經濟部中央標準局員工消費合作社印製 497128、 A7 五、發明説明（6 ) - 用力，故拋光塊底面！物與頂板17接觸之區域. 升降機構能夠以不同之高度支撑著拋光塊，故底面一部分 仍與頂板17接觸。頂板之輪廓可爲非平坦狀，故既使當抛 光塊頂升時，底面14a一部分仍與頂板17接觸。 所需溫度之設定係基於晶圓附著至拋光塊最適合之溫度 、，其變更係取決於施加至抛光塊13之動6型式。蝶維持在 所需溫度有利於拋光後晶圓所需毫微輪廓之平坦度，防止 壤中有凹陷存在，故可避免拋光後晶圓有瑕戚存在，以及 促進所需之晶圓Μ平特徵（或輾平値）。虫鼠46所需之溫度範圍 界於約60至，其以約8〇至95。〇(176。至 2〇3叩）較佳，蠟46能夠以較少之時間到達所需之溫度以及均 勻之溫度，其至少部分原因在於卡盤，卡盤係操作而固定 拋光塊較大之區域，特別是拋光塊之邊緣，與頂板接觸並 防止拋光塊之翹曲。例如當加熱中頂板之溫度爲丨i5 t (239叩），抛光塊13到達所需溫度之時間爲約6〇秒或更少， 抛光塊頂面上蠟溫度之變化在上述±4。〇範圍内。 由前述説明吾人瞭解其可達成本發明之目的以及其他所 衍生之優點。 當揭示本發明之元件或較佳具體實施例時，冠詞“一，，及“ 該”係表示一或多個元件。術語‘‘包括，，，“包含，，及“具有，，係 總括性並表示可爲不同於所述元件之其他元件。 上述構造中各種變更皆在本發明範圍内，上述説明或附 圖中所示所有内容僅係敘述之用且未限制本發明。 本纸張尺度適用中國國家標準（CNS ) A4規格（210 X 29*7公羞） (請先閱讀背面之注意事項再填寫本頁) .裝_ 訂497128 A7 B7 V. Description of the invention (5) The controller 47 is a microcontroller and is used to receive temperature data from the pyrometer (generally bluff). It controls the solenoid valve 27 to drive the air in response to the temperature data. Chuck or lifting mechanism. In the method of the present invention, the polishing block 13 is placed on the top plate 17 of the heating surface, so the heated bottom surface 14a of the polishing block is in contact with the top plate 17. The wax 46 is applied to the polishing block 13 before the polishing block 13 is placed on the chuck. The operation of emptying the chuck 15 fixes the polishing block to the top plate 17, so all the bottom surface 14a is in contact with the top plate 17 and is heated. Changing K, the chuck 15 can prevent the polishing block 13 from warping and contact the polishing block with the heater, so there is no temperature difference between the polishing block edge and the center. The heating element 19 is operated to heat the polishing block 13, and its operating temperature is low enough to prevent the polishing block 13 from being damaged by "thermal shock", but its temperature is sufficient to heat the polishing block quickly. The operating temperature range of the heating element is between 1 ° and 200 °. 〇 (between 212 and 392 F), which is bounded by 13 and 15. 〇 is better (between 266 and 302). The Nan / Dish meter 45 operates to detect the temperature of the worm 46 on the top surface 14b, and transmits the temperature lean material to the controller 47. The controller monitors the temperature data and adjusts the area where the bottom surface Ma of the polishing block 13 contacts the top plate 17 according to the temperature data, so the temperature of the wax can be maintained at the required temperature, and the positive and negative error ranges are relatively small, such as 4 ° C. (7 ° F). For example, set a desired temperature to heat the polishing block fixed by the empty chuck to the required temperature. When the temperature of the wax is higher than 4 ° C / m degrees, the controller 47 stops the valve 27 from pumping. Suction and lean against the polishing block, and drive the lifting mechanism to lift the polishing block away from the top plate, so that the bottom surface 14a of the polishing block 13 can not contact the top plate Π. If the temperature of the wax is lower than the required temperature 40 ° C, the controller drives the valve to lower the polishing block on the top plate, and sucks the air again to fix the polishing block to the top plate 17. Its operation is to a small time. -8 · This paper size is applicable to China National Standard (CNS) A4 specification (2i " 〇x 297 mm) ------ Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, 497128, A7 V. Description of the invention (6)-Hard, so polish the bottom surface! The area where the object is in contact with the top plate 17. The lifting mechanism can support the polishing block at different heights, so a part of the bottom surface is still in contact with the top plate 17. The contour of the top plate may be non-flat, so even when the polishing block is lifted up, a portion of the bottom surface 14a is still in contact with the top plate 17. The setting of the required temperature is based on the most suitable temperature for the wafer to be attached to the polishing block, and its change depends on the type of movement 6 applied to the polishing block 13. Maintaining the butterfly at the required temperature is conducive to the flatness of the nano-profile of the wafer after polishing, preventing the existence of depressions in the soil, so it can avoid the existence of flaws in the wafer after polishing, and promote the required wafer flatness characteristics (Or flattened). The temperature range required for the worm 46 ranges from about 60 to about 80 to 95. 〇 (176. to 203) is better, the wax 46 can reach the required temperature and uniform temperature in less time, at least in part because of the chuck, which is operated and the fixed polishing block is larger. The area, especially the edge of the polishing block, contacts the top plate and prevents warping of the polishing block. For example, when the temperature of the top plate during heating is i5 t (239 °), the time required for the polishing block 13 to reach the required temperature is about 60 seconds or less, and the change in the wax temperature on the top surface of the polishing block is within the above-mentioned ± 4. 〇range. From the foregoing description, I understand the purpose of the invention and other derived advantages. When revealing elements or preferred embodiments of the present invention, the articles "a," and "the" mean one or more elements. The terms "include,", "including," and "having," are intended to be inclusive It is indicated that other elements may be different from the described elements. Various changes in the above construction are within the scope of the present invention, and all the contents shown in the above description or the drawings are only for narrative purpose and do not limit the present invention. Applicable to China National Standard (CNS) A4 specification (210 X 29 * 7 male shame) (Please read the precautions on the back before filling this page).