TW496789B - Cleaning processes using hydrofluorocarbons and/or hydrochlorofluorocarbon compounds - Google Patents

Cleaning processes using hydrofluorocarbons and/or hydrochlorofluorocarbon compounds Download PDF

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Publication number
TW496789B
TW496789B TW89122818A TW89122818A TW496789B TW 496789 B TW496789 B TW 496789B TW 89122818 A TW89122818 A TW 89122818A TW 89122818 A TW89122818 A TW 89122818A TW 496789 B TW496789 B TW 496789B
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Taiwan
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patent application
supercritical fluid
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hcfc
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TW89122818A
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Chinese (zh)
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Raymond Thomas
Robert Wedinger
Kane Cook
Gary Knopeck
Rajiv Singh
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Allied Signal Inc
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Abstract

Disclosed are methods of cleaning articles of manufacture using hydrofluorocarbon and hydrochlorofluorocarbon fluids. The methods comprise generally the steps of (a) providing a hydrofluorocarbon and/or hydrochlorofluorocarbon fluid in liquid or supercritical state; (b) contacting an article of manufacture with said fluid; and (c) removing substantially all of said fluid from said article of manufacture.

Description

五、發明說明(1) 發明範圍 _ t :通常關於氫氟碳和氩氣氟碳化合物於清潔法中之 界肤铲夕,^地,本發明係關於在某些次臨界狀態和超臨 |狀怨之鼠氟破和/或氫氣氟清 印刷電路板之方法。 机火i糸各種衣w物件,尤才日 背景 B夸在:t二刷電路板’ *面架設組件和其它類似電子組件 软焊助熔劑㈣為一種松脂( 二 活化劑典型上為離子 / m之麥此物丄 係從金屬錯表面移除二鼠氣化胺。助溶劑之目的 在軟焊操作期間,係將助焊劑加熱至更可,接。 熔融錫/鉛軟焊劑之溫度),並「烘烤於==广本上為 助焊劑殘餘物可能對;^ έ # t 」;° 。此軟焊 氣時,該離子材二有=必需移除。當暴露於濕 。 柯枓尤其有告,因為變成可移動且具傳導性 在不久的過-去’頃使用氯氟碳( ΐ刷電路板之製造物件軟焊助料卜這 具經濟性。然而,因為瞭解CFC,_於環一 1非吊有效且 造者頃轉移至水性清潔劑。此類清潔劑充二V 5午多製 利,因為其需要強能量製 二二二== >糸,但卻不 液態和超臨界狀態之/氧::=後處置。 之替代物。然而,由於;:::,;;提=為水性清潔 。一個此類缺點係使用二氧化碳需要非以碳的 /、必ft —此 496789 五、發明說明(2) — 用較昂貴之加壓設備。另一缺點係二氧化碳對於清潔一此 極性基材無效。 氫氟破(Η F C ’ s )係一種C F C ’ s之較環保替代物,但其頃於 技蟄中提出為無效清潔劑。例如,李布蘭克(1^1)1&:1(:)注 意到「雖然HFC’ s不含氣.,但其高蒸氣壓和低溶解度使其 成為不良清潔劑。」[清潔溶劑之溶析,精確清潔(T h e Evolution of Cleaning Solvents, Precision Cleaning),1 9 9 7年5月,第14頁。]這受到坎尼斯柏 (Kanegsberg)^!持,其建議HFC’ s「一方面有用於作為其_ 它溶劑之載體,一方面作為沖洗劑,HFC,s之考立丁醇、 (Kauri Bntanol)(KB)數為約1〇,其本身對於大部份有興 趣之污物具有些許或無溶解力。」[無耗臭氧化學物之精 確清>糸(Precision Cleaning Without Ozone Depleting Chemicals),化學工業(Chemistry & Industry) ,1996 年 1 0月,第788頁。] 由於瞭解先前技藝這些和其它缺點,本發明者頃察覺需 要一種新穎有效且更希望得到之方法,以清潔製造物件 ,如印刷電路板。如以下所述般這些和其它目的由本發明 達成。 發明敘述和較佳具體實施例 本發明係關於各種製造物件之清潔法,但尤指印電路板 ,其使用氫氟碳(「HFC」)和氫氣氟碳(「HCFC」)化合物 ’或H F C和H C F C化合物之化合物。本發明者頃意外發現單 單某些HFC s和JCFC’ s或與少量極性溶劑結合,在液態柄V. Description of the invention (1) Scope of the invention t: Generally, the boundary between hydrofluorocarbons and argon fluorocarbons in the cleaning method is used, and the present invention is about certain subcritical states and transcendences | A method of breaking a rat's fluorine and / or hydrogen fluoride to clear a printed circuit board. The machine fires all kinds of clothing and objects, especially the background B. It is exaggerated as follows: t two brush circuit boards' * soldering flux for surface mounting components and other similar electronic components is a kind of turpentine (the second activator is typically ion / m This product does not remove diamine gasification amine from the surface of the metal. The purpose of the flux is to heat the flux to a more acceptable temperature during the soldering operation, and the temperature of the molten tin / lead flux), and "Baking on == Guangben may be right for flux residue; ^ έ # t"; °. When this soldering gas is used, the ion material must be removed. When exposed to moisture. Ke Li is particularly suspicious, because it becomes mobile and conductive in the near past-to-be, using chlorofluorocarbon (ΐ) to solder circuit boards for soldering materials. This is economical. However, because of the understanding of CFC, _Yuhuan 1 is not effective and the creators are transferred to water-based cleaners. Such cleaners are charged at V 5 for 5 days, because they require strong energy to make 222 == > 糸, but they are not liquid. And supercritical oxygen / :: = after disposal. Alternatives. However, due to :::, ;; mention = for aqueous cleaning. One such disadvantage is that the use of carbon dioxide requires non-carbon /, must ft — This 496789 V. Description of the invention (2)-Use of more expensive pressurizing equipment. Another disadvantage is that carbon dioxide is not effective for cleaning this polar substrate. Hydrofluoric cracking (Η FC's) is a more environmentally friendly alternative to CFC's. However, it was proposed as an ineffective cleaner in the technology. For example, Li Blank (1 ^ 1) 1 &: 1 (:) noticed that "Although HFC's do not contain gas, its high vapor pressure And low solubility make it a poor cleaning agent. "[The elution of cleaning solvents, precise cleaning (T he Evolution of Cleaning Solvents, Precision Cleaning), May 1997, page 14.] This is supported by Kanegsberg ^ !, which suggests that HFC's "on the one hand are used as other solvents The carrier, on the one hand, is used as a rinsing agent. The number of Kauri Bntanol (KB) of HFC, s is about 10, and it has a little or no dissolving power for most of the pollutants of interest. "[[ Precision Cleaning Without Ozone Depleting Chemicals, Chemical & Industry, October 1996, p. 788.] Understanding these and other disadvantages of prior art, this book The inventors are aware of the need for a novel, effective, and more desirable method for the clean manufacturing of objects such as printed circuit boards. These and other objects are achieved by the present invention as described below. DESCRIPTION OF THE INVENTION AND PREFERRED EMBODIMENTS The present invention relates to Various methods of cleaning articles, but especially printed circuit boards that use hydrofluorocarbon ("HFC") and hydrofluorocarbon ("HCFC") compounds' or compounds of HFC and HCFC compounds. The inventors surprisingly found that are some single HFC s and single JCFC 's or in combination with a small amount of a polar solvent, in the liquid shank

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五、發明說明(3) 超S品界基底〉> 1 , 因為_ -本法 較不昂 係非常 一 ’糸法中戲劇性地性能超越二氧化碳。 HFC,s 矛口HCFC, s 亨 # 广 广 ^ 洛氣壓和臨界壓力皆低於二氧化碳 所需設備需要之纟。^V. Description of the invention (3) Super-S product base >> 1, because _-this method is less expensive, and its performance is dramatically better than carbon dioxide. HFC, s mouth HCFC, s Heng # 广 广 ^ Low pressure and critical pressure are lower than those required for carbon dioxide equipment. ^

而受之刼作壓力將較低,且使用之設備將 貴。這是重& AA 勺’因為一個使用超臨界技術之障礙 高壓設備之高成本。The operating pressure will be lower and the equipment used will be expensive. This is a heavy & AA spoon ’because of a barrier to using supercritical technology. The high cost of high pressure equipment.

^ ^某二本發明具體實施例,表面上含污染物製造物件 山月j法匕括步驟為:(a)提供一種如超臨界流體之氫函 产 二物 (^)將製造物件至少受污染表面與該含超臨界 風,5 1體,觸;和(c)從該製造物件幾乎完全移除全部二 j a超L界氫鹵碳流體。此處使用之氫鹵碳表示 HCFC之任何化合物。 ' 咸^本發明之方法能夠用以清潔各種製造物件,其包括 $如’印刷電路板,包括具表面架設裝置之電路板,和 石夕1曰圓°對於石夕晶圓而言,本發明能夠用以有效清潔並移 除熟化和未熟化光阻,其係在製造電腦晶片之圖騰置於其 上時沉積於該晶圓上。此外,咸信本發明之方法尤其可應 用於清潔印刷、電路板。^ ^ In a specific embodiment of the present invention, the manufacturing method of the article containing contamination on the surface is as follows: (a) providing a hydrogen product such as a supercritical fluid; (^) contaminating the manufactured article at least The surface is in contact with the supercritical wind, 51 body, and (c) almost completely removes all of the super-L-boundary hydrohalocarbon fluid from the manufactured article. Hydrohalocarbon as used herein means any compound of HCFC. The method of the present invention can be used to clean a variety of manufactured objects, including a printed circuit board including a circuit board with a surface mounting device, and a circle of Shi Xi 1 ° For Shi Xi wafer, the present invention It can be used to effectively clean and remove mature and uncured photoresist, which is deposited on the wafer when a totem for manufacturing a computer wafer is placed thereon. Furthermore, the method of the present invention is particularly applicable to cleaning printed circuit boards.

此處使用之「超臨界流體」通常表示一種超臨界態流體 ’其包括至少一種HFC或HCFC化合物,且亦表示液態且在 大氣壓之沸點低於約16 °c之HFC或HCFC化合物。本發明者 相信對於許多本發明之具體實施例而言,此類液體流體在 某些類似超g品界恕之流體方面發生作用。為了本發明之目 的’任何超臨界態流體,其包括單一HFC或HCFC流體或HFC 和/或HCFC流體之混合物,以及任何HFC或HCFC流體與其它As used herein, "supercritical fluid" generally refers to a supercritical fluid, which includes at least one HFC or HCFC compound, and also refers to an HFC or HCFC compound that is liquid and has a boiling point below about 16 ° c at atmospheric pressure. The present inventors believe that for many specific embodiments of the present invention, such liquid fluids act on certain fluids similar to those in the super g range. For the purposes of the present invention, 'any supercritical fluid, which includes a single HFC or HCFC fluid or a mixture of HFC and / or HCFC fluids, and any HFC or HCFC fluid with other

第7頁 496789 五、發明說明(4) 材料和/或添加劑之混合物,將是一種「超臨界流體」、 為了本發明之目的,任何液態流體,其在大氣壓之沸點低 於約16°C,包括單一 HFC或HCF流體或HFC和/或HCFC之混合 物,以及HFC或HCFC流體與其它材料和/或添加劑之混合物 ,將是一種「超臨界流體」。 各種H F C ’ s或H C F C ’ s皆能夠用於本發明方法以提供超臨 界流體。適當HFC’ s包括,例如,二氟甲烧(,,R-32π ),五 氟乙烷(nR-125”),四氟乙烷異構物(,,R—134,1anR-134an) ,三氟甲烧("二良- 2 3"),三氟乙烧異構物(” R 一 1 4 3π和 一Page 7 496789 V. Description of the invention (4) The mixture of materials and / or additives will be a "supercritical fluid". For the purpose of the present invention, any liquid fluid whose boiling point at atmospheric pressure is lower than about 16 ° C, A single HFC or HCF fluid or a mixture of HFC and / or HCFC, and a mixture of HFC or HCFC fluid with other materials and / or additives will be a "supercritical fluid". Various H F C 's or H C F C' s can be used in the method of the present invention to provide a supercritical fluid. Suitable HFC's include, for example, difluoromethane (,, R-32π), pentafluoroethane (nR-125 "), tetrafluoroethane isomers (,, R-134, 1anR-134an), Trifluoromethane (" Erliang-2 3 "), trifluoroethane isomers ("R 1 1 4 3π and 1

” R-143a”),五氟乙烷("R-125”)和五氟丙烷 如,,’ R - 2 4 5 f a,’’ R - 2 4 5 e an,n R ~ 2 4 5 c aπ,和 M R - 2 4 5 c b") 等等。適當之HCFC’ s包括氣二氟曱烷(”R_22"),四氟氯乙 烧R-124n )等等。在某些較佳具體實施例中,用於本發 明之HFC為R-2 3或R-32。在其它較佳具體實施例中,用於 本發明之HCFC為R-22或R-124。 本發明之HFC和HCFC能夠單獨使用或彼此摻混。當使用 混合物時’含{合物之共彿或似共彿或恒;弗混合物尤复^ ,。例如,此類混合物如美國專利第4,9? 述、^ 包括R-32和R-125之共沸物,將其併入本文 。4"R-143a"), pentafluoroethane (" R-125 ") and pentafluoropropane such as, 'R-2 4 5 fa," R-2 4 5 e an, n R ~ 2 4 5 c aπ, and MR-2 4 5 c b "), etc. Suitable HCFC's include gas difluoromethane ("R_22 "), tetrafluorochloroethane, R-124n) and so on. In some preferred embodiments, the HFC used in the present invention is R-2 3 or R-32. In other preferred embodiments, the HCFC used in the present invention is R-22 or R-124. The HFC and HCFC of the present invention can be used alone or blended with each other. When using a mixture ’, it contains the common or common Buddha or constant; For example, such mixtures are described in US Patent No. 4,9, including azeotropes of R-32 and R-125, which are incorporated herein. 4

能夠將其它材料添加於含氫良号 运些材料包括:具有嶋至約8個碳之直鏈力。 醇,如曱醇,乙西菜,=n 乏鏈和if会 T子C酉予,丙醇和丁醇;直鏈,支勉^ 长序 烷,如氣仿;二氧ψ^ _ 又鍵和壞糸 496789 五、發明說明(5) -----—__ ,硫和碟之化合物;和芳 — 常,這4b # # γ γ胃&矢和非方香杈%糸化合物。通-里馬υ · 1重I %至約1 0重量%。 甲=具體實施例中,係將約。.1重量%至1〇重量。 請者頃發現添加此份量之甲“^^亂且成者。中 供之超臨界流體清潔效力。例如]頃二虱鹵碳化合物提 〇· 5重量%甲醇與主要由[12 見根據本發明將約 ,清潔效力棱1純R-125大β倍。 ° ^界流體一起使用 、=知有用於溶劑清潔應用之添加劑亦 一 方/ 1適當添加劑包括:安定劑,如具以用於本發明之 子之硝基烷類;酸中和劑,如&基=二有約1至約5個碳原 ,面 性劑,如離子性或非離子性界:::環氧化物;和 和非鼠化界面活性劑。添加劑存在量 、生劑,包括氟化 約5重量%,較佳為約0· 1至約1重量%。吊為約〇· 1重量%至 根據本發明某些具體實施例,提供步 HFC和/或HCFC-之流體接受足以形成超臨衣(=)包括將包括、 常,此處所述之HFC,s,HCFC,s,其它村體之環境。通 為商業上可取得。根據某些具體實施例,’和添加劑全部 於作為超臨界流體之HFC或HCFC流體係在足本發明中適用Other materials can be added to the hydrogen-containing good number. These materials include: a straight chain force of 嶋 to about 8 carbons. Alcohols, such as acetol, acetonitrile, = n depleted chain and if will be sub-C, propyl alcohol and butanol; linear, branched ^ long-order alkane, such as aerosol; dioxy ψ ^ _ and bond and糸 糸 496789 V. Description of the invention (5) -----—__, compounds of sulfur and saucer; and fragrant — often, this 4b # # γ stomach & Tong-Li Ma υ · 1 weight I% to about 10% by weight. A = In the specific embodiment, it will be about. .1% to 10% by weight. The applicants found that adding this amount of “A” is a messy and successful one. The supercritical fluid cleaning effectiveness of the medium is provided. For example] the dicarbohalocarbon compounds are extracted by 0.5% by weight of methanol and mainly by [12 see according to the present invention The cleaning efficiency will be approximately β times greater than that of pure R-125. ° ^ Use of fluids together, = known additives for solvent cleaning applications / 1 Appropriate additives include: stabilizers, such as those used in children of the present invention Nitroalkanes; acid neutralizers, such as & radicals = two having about 1 to about 5 carbon atoms, facial agents, such as ionic or nonionic circles ::: epoxides; and non-rats Surfactants. Existing amounts of additives, biocides, including fluorinated about 5% by weight, preferably about 0.1 to about 1% by weight. Suspended from about 0.1% by weight to some specific embodiments of the present invention Provide fluid receiving step HFC and / or HCFC- sufficient to form a super-prosthetic clothing (=) including HFC, s, HCFC, s, other village environments as will be included, often, as described herein. Commercially available Obtained. According to certain embodiments, the 'and additives are all in HFC or HCFC fluid as supercritical fluid Applicable in the present invention

^^HFC^HCFC 沸點高於約1 6 °F之具體實施例而言,係將、户=,σ物正系 足以使流體為超臨界態之環境。對於超瞭^恶風1^碳接文 可以將流體溫度和/或壓力分別提高至高;^態流體而言’ η於臨界溫度和臨—^^ HFC ^ HCFC For specific embodiments with a boiling point higher than about 16 ° F, the environment is sufficient to make the fluid in a supercritical state. For super ^ evil wind 1 ^ carbon connection, the temperature and / or pressure of the fluid can be increased to high; ^ state fluid ’η is at the critical temperature and near —

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496789 五、發明說明(6) 界壓力。例如,圖1為用於本發明之裝置丨〇塊狀圖,其中 可以將流體接受足以形成超臨界流體之環境。在圖丨令, HFC/HCFC流體容器11連接於唧筒1 2。唧筒1 2連接於包含欲 清潔物件14之室1 3。根據本方法,保持於容器丨丨中之H{?c^ HCFC流體,未示出,通過唧筒12,其中流體壓力和/或溫 度經提南至足以形成超臨界流體之點。超臨界流體其後通 過室1 3以便清潔其中包含之物件。根據本發明,可以使^ 此方法和其它已知方法以提供超臨界含氫鹵碳流體,其後 將受污染製C物件暴露於該超臨界流體。 諳熟此蟄者將即可決定H F C和H C F C化合物形成根據本發^ 明之超臨界流體必需接受之環境。溫度將取決於H F c, s和/ 或HCFC’ s之部份或二者以及取決於壓力。通常,超臨界% 體之提供係根據本發明,將HFC或HCFC維持於約—= 2 0 0 t之溫度,甚至較佳為約15 °C至約130 t。在某些較$ 具體實施例中,提供超臨界流體之壓力通常為約25二Λ 土 至約 1 0, 0 0 0 psia,更佳為約1〇〇 至3, 5〇〇 psia。 PSla 按照以上揭示,諳熟此藝者將即能夠提供根據本發之 超臨界流體,無不當之實驗。 根據本發明之較佳具體實施例,接觸步驟(b)包括以 臨界流體覆蓋製造物件中至少部份受污染表面,並將至 部份來自表面之汚染物溶於超臨界流體中,使得移除流;; 造成污染物從製造物件之接觸部份被移除。 任何用以將製造物件至少部份受污染表面覆蓋之已知方 法能夠用於本發明,包括,例如,將物件浸潰二超臨^流496789 V. Description of the invention (6) Boundary pressure. For example, Fig. 1 is a block diagram of an apparatus for use in the present invention in which a fluid can be subjected to an environment sufficient to form a supercritical fluid. In the figure, the HFC / HCFC fluid container 11 is connected to the drum 12. The drum 12 is connected to the chamber 1 3 containing the object 14 to be cleaned. According to this method, the H {? C ^ HCFC fluid held in the container, not shown, passes through the drum 12, where the fluid pressure and / or temperature is raised to a point sufficient to form a supercritical fluid. The supercritical fluid then passes through the chamber 13 to clean the contents contained therein. According to the present invention, this method and other known methods can be used to provide a supercritical hydrogen-containing halocarbon fluid, after which the contaminated C-making article is exposed to the supercritical fluid. Those skilled in the art will be able to determine the environment in which H F C and H C F C compounds must be accepted to form a supercritical fluid according to the present invention. The temperature will depend on some or both of H F c, s and / or HCFC 's and on pressure. Generally, the supply of supercritical% is based on maintaining the HFC or HCFC at a temperature of about-= 2 0 t, and even more preferably about 15 ° C to about 130 t according to the present invention. In some of the more specific embodiments, the pressure at which the supercritical fluid is provided is typically from about 25 to about 10,000 psia, and more preferably from about 100 to 3,500 psia. According to the above disclosure, the skilled artist will be able to provide supercritical fluids according to the present invention without undue experimentation. According to a preferred embodiment of the present invention, the contacting step (b) includes covering at least a part of the contaminated surface in the manufacturing object with a critical fluid, and dissolving a part of the pollutants from the surface in the supercritical fluid to remove Flow ;; cause contamination to be removed from the contact portion of the manufactured article. Any known method for covering at least part of a contaminated surface of an article of manufacture can be used in the present invention, including, for example, immersing the article in a super-critical stream.

第10頁 496789 五、發明說明(7) 私中’將物件喷霧等等。在本發明之較佳具體實施例中―,-塗佈方法為浸潰。Page 10 496789 V. Description of the invention (7) In private ‘spray objects and so on. In a preferred embodiment of the present invention, the coating method is dipping.

任何用以將製造物件浸潰於超臨界流體之已知方法能夠 用於本發明,包括,尤指將製造物件浸潰於超臨界流體流 中。例如,根據本發明較佳具體實施例,經由圖i中塊狀 圖說明之清潔裝置能夠用以將製造物件浸潰於超臨界流體 机中。在圖1中’藉由將或HCFC流體通過唧筒12而形成 ^超臨界流體流入室丨3中,離開膨脹閥丨5並進入低壓收声 容器1 6中。當;:導入室丨3中時,超臨界流體膨脹而充滿該f 、。因此’將保持於室1 3中之物件丨4隨著從唧筒丨2經由閥Γ5 流到容器1 6而浸潰於超臨界流體流内。 或f ’製造物件可以如威特莫(Wetm〇re) et al·之美國 專利第5,5 1 4,2 2 0號中所述般,經由「壓力脈衝」浸潰, 將4專利併入本文供參考。通常,壓力脈衝包括在超臨界 或f超臨界環境將物件與流體接觸,並定期將超臨界流體 加壓至更高程度,其後降壓回到原始程度。諳熟此藝者將 立即此夠於本發明採用此一壓力而無不當實驗。Any known method for immersing a manufactured article in a supercritical fluid can be used in the present invention, including, in particular, immersing a manufactured article in a supercritical fluid stream. For example, according to a preferred embodiment of the present invention, the cleaning device illustrated by the block diagram in Fig. I can be used to immerse a manufactured article in a supercritical fluid machine. In FIG. 1 ′, a supercritical fluid flows into the chamber 丨 3 by passing the or HCFC fluid through the cartridge 12, exits the expansion valve 5, and enters the low-pressure sound receiving container 16. When :: is introduced into the chamber 3, the supercritical fluid expands to fill the f ,. Therefore, the object ′ 4 to be held in the chamber 13 is immersed in the supercritical fluid flow as it flows from the cylinder 丨 2 to the container 16 through the valve Γ5. Or f 'manufactured article can be immersed by "pressure pulse" as described in Wetmoore et al. U.S. Patent No. 5,5 1,4,220. 4 patents are incorporated into This article is for reference. Generally, a pressure pulse involves contacting an object with a fluid in a supercritical or f supercritical environment, and periodically pressurizing the supercritical fluid to a higher level, after which the pressure is reduced back to the original level. Those skilled in the art will immediately be able to use this pressure in the present invention without undue experimentation.

在超臨界流體為液態流體之本發明具體實施例中,製造 物件可以藉由將至少部份製造物件浸於液態流體中而浸潰 。曰热此藝者將立即能夠於本發明採用此一壓力而無不當 實驗。 阳沾勢者將暸解’物件浸潰於超臨界流體流中之環境, 包括流速,溫度,壓力和時間,將取決於許多因子而改變 ,包括使用之HFC或HCFC流體。例如,在某gHCFC流體纪In a specific embodiment of the invention in which the supercritical fluid is a liquid fluid, the article of manufacture may be impregnated by immersing at least a portion of the article of manufacture in the liquid fluid. The artist will immediately be able to use this pressure in the present invention without undue experimentation. The entrenched person will understand the environment in which the object is immersed in a supercritical fluid flow, including flow rate, temperature, pressure, and time, which will vary depending on many factors, including the HFC or HCFC fluid used. For example, in a gHCFC fluid age

第11頁 496789 五、發明說明(8) 括R-22之較佳具體實施例中,在約25 °C之溫度和約151 _ p s i a之壓力,移除1 〇 〇 %印刷電路板上之軟焊助:!:容劑。此外 ,在某些HFC流體包括R-32之較佳具體實施例中,在約1〇〇 °C之溫度和約1 2 0 〇 p s i a之壓力,移除9 0 %印刷電路板上之 軟焊助熔劑。根據本揭示·,諳熟此藝者將立即能夠將用於 本發明之浸潰環境最佳化而無不當實驗。 移除步驟(c)較佳包將超臨界流體蒸發。根據較佳具體 實施例,蒸發步驟包括改變超臨界流體之壓力和/或溫度 ’使得流體轉:化為氣態。如諳熟此藝者將瞭解般,藉由^ 變壓力’溫度或壓力與溫度二者,超臨界態之流體能夠立 即轉化為氣態’使得流體不再為超臨界狀態。此外,液態 之本發明流體(大氣沸點為約丨6 t或更低之流體)通常能夠 以降低壓力或提高溫度而轉化為氣體。 内之污染物沉澱並收集於容器16中。根據以上揭示, 此蝥者將立即能夠根據本發明蒸發並移除超臨界流體。 超臨界流體頃經蒸法且污染物頃根據本發明移除後,可 超臨界流體周圍環境改變能夠引起溶於超臨界流體之污 染物從溶液沉殿出。因此,在某些較佳具體實施例中,物 件與^臨界流體接觸以移除污染物後,將超臨界流體流入 收集至中’於其中將壓力和/或溫度改變以將污染物從流 體掉出。例如’在圖1中,將保持於室1 3内之物件1 4浸潰 於超臨界流體流中。超臨界流體將污染物從物件1 4移除並 流經閥15進入收集容器16中。當流體通過閥15,流體壓力 下降,超臨界流體在收集容器工6中轉化為氣體。溶於流體 諳 熟Page 11 496789 V. Description of the invention (8) In the preferred embodiment including R-22, at a temperature of about 25 ° C and a pressure of about 151 _ psia, remove 100% of the softness on the printed circuit board. Welding Aid:!: Capacitor. In addition, in certain preferred embodiments of certain HFC fluids including R-32, 90% of the solder on the printed circuit board is removed at a temperature of about 100 ° C and a pressure of about 120 psia. Flux. According to this disclosure, those skilled in the art will immediately be able to optimize the immersion environment used in the present invention without undue experimentation. The step (c) is preferably removed to evaporate the supercritical fluid. According to a preferred embodiment, the evaporation step includes changing the pressure and / or temperature of the supercritical fluid so that the fluid is transformed into a gaseous state. As those skilled in the art will understand, by changing the pressure 'temperature or both pressure and temperature, a supercritical fluid can be immediately transformed into a gaseous state' so that the fluid is no longer in a supercritical state. In addition, the fluid of the present invention (a fluid having an atmospheric boiling point of about 6 t or lower) can usually be converted into a gas by reducing the pressure or increasing the temperature. Contaminants therein are deposited and collected in a container 16. Based on the above disclosure, this person will immediately be able to evaporate and remove supercritical fluids in accordance with the present invention. After the supercritical fluid is steamed and the pollutants are removed according to the present invention, the surrounding environment of the supercritical fluid can be changed to cause pollutants dissolved in the supercritical fluid to sink out of the solution. Therefore, in certain preferred embodiments, after the object is in contact with the critical fluid to remove the contaminants, the supercritical fluid is collected and collected into the 'in which the pressure and / or temperature is changed to remove the contaminants from the fluid Out. For example, in FIG. 1, the object 14 held in the chamber 13 is immersed in a supercritical fluid flow. The supercritical fluid removes contaminants from the object 14 and flows through a valve 15 into a collection container 16. When the fluid passes through the valve 15, the pressure of the fluid decreases, and the supercritical fluid is converted into a gas in the collecting container worker 6. Soluble in fluid

第12頁 496789 五、發明說明(9) 以將流體冷凝並回收以便於清潔法中使用。例如,圖1表· 示一種收集容器17,氣態HFC或HCFC流體唧入其中並經冷 凝為液體HFC或HCFC流體。液體HFC或HCFC流體能夠循環為 到容器1 1以便再使用。 實例 為了可以更易於瞭解本 用於說明本發明而非限定範圍。 此實例說明清節應用中各種HFC和HCFC之效力。 根據本發明1製備4種HFC/HCFC流體並於清潔電路板測誠一 其效力。該4種流體,包分別包括具〇· 5重量%甲醇之r —2y ’R-32 ’R-134a和R-125 ’將其在各種溫度和壓力環境下 測试。此類測試之結果摘錄於表1中。本發明之夂流體符 合或超越二氧化碳之清潔力,用以作為工業上標準清潔流 體。為了對照,測試二氧化碳,R-125(純)和R—U3a之清 潔效力,並將這些結果於表1中表示。 α H F C / H C F C和二氧化碳流體皆經由以下實驗方法測—戈· 實例法。從電路板切割2英吋χ2· 5英吋取樣板。/'將$各取 樣板清潔並於二面皆塗佈經完全活化之軟焊助熔劑^^⑶ 1 585 RA助熔劑]。每塊取樣板之平均塗層為每平方英吋2〇 毫克。其後將二取樣板掛於架上。將架置入經水和異丙醇 清洗之高壓容器中以移除任何離子性污染物。將言界容哭 密封並排空。其後使用真空架和潮濕冰塊或非少 將評比之清潔流體裝填於容器中。一裝填流體,便將^個 容器置入在實驗溫度平衡之浴中。或者,將高壓容哭以籍Page 12 496789 V. Description of the invention (9) To condense and recover the fluid for use in the cleaning method. For example, Fig. 1 shows a collection container 17 into which a gaseous HFC or HCFC fluid is poured and condensed into a liquid HFC or HCFC fluid. The liquid HFC or HCFC fluid can be recycled to the container 11 for reuse. Examples In order that the present invention may be more easily understood, the present invention is illustrated but not limited in scope. This example illustrates the effectiveness of various HFCs and HCFCs in cleansing applications. Four kinds of HFC / HCFC fluids were prepared according to the present invention 1 and tested for their effectiveness in cleaning circuit boards. The four fluids, including r-2y'R-32'R-134a and R-125 'with 0.5% by weight of methanol, were tested under various temperature and pressure environments. The results of such tests are summarized in Table 1. The tritium fluid of the present invention meets or exceeds the cleaning power of carbon dioxide and is used as an industry standard cleaning fluid. For comparison, the cleaning effectiveness of carbon dioxide, R-125 (pure) and R-U3a was tested, and these results are shown in Table 1. α H F C / H C F C and carbon dioxide fluid are measured by the following experimental method-Go. Example method. Cut a 2-inch x 2.5-inch sampling board from the circuit board. / 'Clean each sample plate and apply fully activated soldering flux on both sides ^^ ⑶ 1 585 RA flux]. The average coating per sample plate was 20 mg per square inch. The two sampling plates were then hung on a rack. Place the rack in a high-pressure vessel washed with water and isopropanol to remove any ionic contaminants. Cry the speech and seal it and empty it. Thereafter, the vacuum cleaner and moist ice cubes were used to fill the container with the cleaning fluid. As soon as the fluid was filled, ^ containers were placed in the experimental temperature equilibrium bath. Or cry high pressure

496789 五、發明說明αο) 由熱固組控制於希望溫度之熱罩包裹,並保持暴露於加熱-,持續足以達成所需溫度之時。其後開始計算暴露時間。 暴露需要之時間後,任由流體從容器逸出並於收集容器中 冷凝以便處置。其後將採樣板從容器移除並以α金屬ω尺 6 〇 〇導電計測量清潔度。將板以異丙醇清洗並使用導電計 測量異丙醇洗液導電性而測量留置板上之助炼劑量。表1 中提出之清潔度數據提出板上所留置助熔劑量降低百分比496789 V. Description of the invention αο) Wrapped by a heat shield controlled by a thermoset at a desired temperature, and kept exposed to heat-up, for a time sufficient to achieve the required temperature. Thereafter, the exposure time was calculated. After the time required for exposure, allow fluid to escape from the container and condense in a collection container for disposal. Thereafter, the sampling plate was removed from the container and the cleanliness was measured with an alpha metal omega ruler 600. The plate was cleaned with isopropanol and the conductivity of the isopropanol washes was measured using a conductivity meter to measure the amount of assisting the indwelling plate. The cleanliness data presented in Table 1 suggest a reduction in the amount of flux retained on the board

各種流體之清潔效力 編號 流體 壓力 PSIA] 溫度 , UC 時間 份鐘) % 淸潔 C1 CO: 1300 40 45 <10 C2 R-125(near) S75 95 45 <10 C3 R-I43a &25 95 45 <10 Ε1 R-22 775 100 45 100 Ε2 R-22 151 25 45 ]〇0 Ε3 R-22 151 25 5 78 Ε4 R-32 J200 100 45 90 Έ5 R-32 875 so 45 80 Ε6 R-32 707 、 70 45 65 Ε7 R-32 245 25 45 10 Ε8 R-134a 700 110 45 60 £9 R-125/0.5 wt% MeOH 875 95 45 60Cleanliness effectiveness of various fluids. Number of fluid pressure PSIA] Temperature, UC time minutes)% Jie C1 CO: 1300 40 45 < 10 C2 R-125 (near) S75 95 45 < 10 C3 R-I43a & 25 95 45 < 10 Ε1 R-22 775 100 45 100 Ε2 R-22 151 25 45] 〇0 Ε3 R-22 151 25 5 78 Ε4 R-32 J200 100 45 90 Έ5 R-32 875 so 45 80 Ε6 R-32 707 、 70 45 65 Ε7 R-32 245 25 45 10 Ε8 R-134a 700 110 45 60 £ 9 R-125 / 0.5 wt% MeOH 875 95 45 60

如表1所示般,當此類H F C ’ s和H C F C ’ s流體係在超臨界溢As shown in Table 1, when such H F C ’s and H C F C’ s flow systems

第14頁 /07 /07 五、發明說明Gl) 度和壓力應用時 離子性軟焊助溶 更發現當在略低 體移除離子物至 認定為不良清潔 傾向提高,但呈 尤指關於移除離 頃因而敘述某 將易於作各種一替 改良易企圖成為 企圖在本發明之 實例,但非限制 相當g吾句中所定 =種HFC和HCFC對於從測試採樣板 物,戲劇性地性能超越二氧化碟、。 較低程度。如廷些相同流 化合物。雖般,hfc’s因而被 …、i吊已知溶解力在臨界區内 = HFC’ Μ多除污染物之程度是意外的内 此士因為超臨界C〇2並未呈現此現象。 ,月之才寸殊具體實施例,諳熟此藝耆 A °周正和改良。所有此類替代,調整茶^ 2述之部份,雖然並未在此處指出,位 精It和範圍内。因此,以上敘述係僅利用 赉明僅党限如以下申請專利範圍和其 義般。Page 14/07 / 07 V. Description of the invention Gl) Ionic soldering flux during the application of degree and pressure It is found that when the ionic substances are removed at a slightly lower body to the extent that it is considered to be a poor cleaning, the tendency is improved, but it is particularly about the removal Therefore, it is described that an example of the present invention will be easy to make a variety of improvements, but it is not limited to what is specified in the sentence = a type of HFC and HCFC. From the test sample plate, the performance surpasses the dioxide disk dramatically. . To a lesser extent. Such as these same stream compounds. Although, hfc ’s are therefore known to be…, the degree of dissolution in the critical region = HFC ’, and the degree of removal of pollutants is unexpected. This is because supercritical CO2 did not exhibit this phenomenon. , The specific embodiment of the month of talent, familiar with this art, A ° Zhou Zhenghe and improvement. For all such alternatives, adjust the parts described in Tea ^ 2, although not indicated here, within the range of It and Range. Therefore, the above description is only based on the application of Ming Ming, and the party scope is the same as the scope and meaning of the following patent applications.

第15頁 496789Page 15 496789

第16頁Page 16

Claims (1)

496789 六、申請專利範圍 1 · 一種含表面上污染物之製造物件清潔法,包括步驟為 (a) 提供一種氫鹵碳化合物作為超臨界流體; (b) 將該製造物件受污染表面與該超臨界流體接觸; 和 (c) 從該製造物件受污染表面幾乎完全移除該超臨界 流體。 2. 根據申請_專利範圍第1項之方法,其中該超臨界流體^ 包括HFC。 : > 3. 根據申請專利範圍第2項之方法,其中該HFC係擇自δ R-32,R-125,R- 134,R-134a,R-23,R-143,R-143a, R-245fa,R-245ea,R -245ca,R -245eb和其中二種或多種 之混合物。 4. 根據申請專利範圍第2項之方法’其中該超臨界流體 更包括擇自由醛,酮,酯,醚和醇所構成群組之氧化化合 物。 - 5. 根據申請專利範圍第4項之方法,其中氧化化合物係 一種擇自由甲醇,乙醇,正丙醇,異丙醇,正丁醇,異丁 醇和三級丁醇所構成群組之醇類。 6. 根據申請專利範圍第2項之方法,其中該超臨界流體 更包括約0 . 1重量%至約0 . 9重量%曱醇。 7. 根據申請專利範圍第1項之方法,其超臨界流體包括 HCFC。 8. 根據申請專利範圍第7項之方法,其中該HCFC係擇I496789 VI. Scope of patent application1. A method for cleaning manufactured articles containing contaminants on the surface, including the steps of (a) providing a hydrohalocarbon compound as a supercritical fluid; (b) contaminating the contaminated surface of the manufactured article with the supercritical fluid; Critical fluid contact; and (c) almost completely removing the supercritical fluid from the contaminated surface of the article of manufacture. 2. The method according to application_patent scope item 1, wherein the supercritical fluid ^ includes HFC. : > 3. The method according to item 2 of the scope of patent application, wherein the HFC is selected from δ R-32, R-125, R-134, R-134a, R-23, R-143, R-143a, R-245fa, R-245ea, R-245ca, R-245eb and a mixture of two or more of them. 4. The method according to item 2 of the scope of patent application, wherein the supercritical fluid further comprises an oxidized compound selected from the group consisting of aldehydes, ketones, esters, ethers and alcohols. -5. The method according to item 4 of the scope of patent application, wherein the oxidizing compound is an alcohol selected from the group consisting of methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol and tertiary butanol. . 6. The method according to item 2 of the patent application range, wherein the supercritical fluid further comprises about 0.1% by weight to about 0.9% by weight of methanol. 7. The method according to item 1 of the patent application scope, wherein the supercritical fluid includes HCFC. 8. The method according to item 7 of the scope of patent application, wherein the HCFC is selected I 第17頁 496789 六、申請專利範圍 由R 2 2,R -丨2 4和其混合物 9. 根據申請專利範圍第厅構成之群組 ,包括擇自由酸’綱,略,、之方法’其中該超臨界流體 物。 ^,所構成群組之氧化化合 10. 根據申請專利範圍 其中該超臨界流寧 其中該超臨界流體 其中該超臨界流體 其中該提供步驟 =種擇自由甲醇,乙醇,^ =方法,其中氧化化合物係 醇和三級丁醇所構成群組之醇;:異丙醇’正丁醇’異丁 。根據申言青專利範圍以項2方去 1至少—獅C和至少-種HCFC。, 2 ·根據申請專利範圍第 為超臨界狀態。 方法 1 3 ·根據申請專利範圍第丨項之方法 為液恶。 1 4 ·根據申請專利範圍第1項之方 一 _ 匕 約10 C至約200 c之溫度提供一種HFC或HCFC W 15·根據申請專利範圍第14項之方法,其中該提供步驟 (a)包括在約1 5 °C至約1 30 °C之溫度提供一種hfc或HCFC。 1 6 ·根據申凊專利範圍弟1 4項之方法,其中該提供步驟 (3)包括在約25口3丨3至約1〇,〇〇〇03丨8之壓力提供一種{^匸 或HCFC 。 1 7 ·根據申請專利範圍第1 5項之方法,其中該提供步驟 (a)包括在約1〇〇 psia至約3,500 psia之壓力提供一種HFC 或HCFC 。 1 8 ·根據申請專利範圍第1項之方法,其中該接觸步驟二Page 17 496789 VI. The scope of application for patents consists of R 2 2, R-丨 2 4 and mixtures thereof. 9. According to the group of the scope of application for patents, the group includes the selection of free acids, such as the "Summarization, Omission, and Methods", where Supercritical fluids. ^, The oxidative combination of the group 10. According to the scope of the patent application, where the supercritical fluid is in which the supercritical fluid is in which the supercritical fluid is in which the providing step = the choice of free methanol, ethanol, ^ = method, in which the compound is oxidized Alcohols and tertiary butanols; alcohol group: isopropyl alcohol 'n-butanol' isobutyl. According to the claim, the scope of the patent is to go in two ways. 1 At least-Lion C and at least-HCFC. 2 · According to the scope of patent application, it is the supercritical state. Method 1 3 · The method according to item 丨 of the scope of patent application is liquid evil. 1 4 · Provide an HFC or HCFC W according to the first one of the scope of the patent application item 1 _ about 10 C to about 200 c. 15 · The method according to the scope of the patent application item 14, wherein the providing step (a) includes Provide an hfc or HCFC at a temperature of about 15 ° C to about 1 30 ° C. 16 · The method according to claim 14 of the patent scope of the application, wherein the providing step (3) includes providing a {^ 匸 or HCFC at a pressure of about 25 mouths 3 丨 3 to about 10,000,03,8. . 17. The method according to item 15 of the scope of patent application, wherein the providing step (a) includes providing an HFC or HCFC at a pressure of about 100 psia to about 3,500 psia. 1 8 · The method according to item 1 of the scope of patent application, wherein the contacting step 2 第18頁 496789 六、申請專利範圍 (b)包括以該超臨界流體覆蓋該物件之至少受污染部份。 1 9.根據申請專利範圍第1 8項之方法,其中該接觸步驟 (b)更包括將該物件受污染部份上之至少部份污染物溶解 於該超臨界流體中。 2 0.根據申請專利範圍第1項之方法,其中該接觸步驟 (b)包括將該物件之至少受污染部份浸潰於該超臨界流體 流中。 2 1.根據申請專利範圍第1項之方法,其中該移除步驟 (c )包括將該超臨界流體轉化為氣態。 一 2 2 .根據申請專利範圍第2 1項之方法,其中將該超臨界> 流體轉化為氣態之步驟包括改變超臨界流體接受之壓力。 2 3.根據申請專利範圍第2 2項之方法,其中將該超臨界 流體轉化為氣態之步驟包括將改變超臨界流體之溫度。 2 4.根據申請專利範圍第1項之方法,其中該製造物件包 括印刷電路板。 2 5.根據申請專利範圍第1項之方法,其中該製造物件包 括石夕晶圓。Page 18 496789 VI. Scope of patent application (b) Including covering at least the contaminated part of the object with the supercritical fluid. 19. The method according to item 18 of the scope of patent application, wherein the contacting step (b) further comprises dissolving at least part of the pollutants on the contaminated part of the object in the supercritical fluid. 20. The method according to item 1 of the scope of patent application, wherein the contacting step (b) comprises immersing at least a contaminated portion of the object in the supercritical fluid flow. 2 1. The method according to item 1 of the patent application scope, wherein the removing step (c) comprises converting the supercritical fluid into a gaseous state. A 2 2. The method according to item 21 of the scope of patent application, wherein the step of converting the supercritical fluid to a gaseous state includes changing the pressure accepted by the supercritical fluid. 2 3. The method according to item 22 of the scope of patent application, wherein the step of converting the supercritical fluid to a gaseous state includes changing the temperature of the supercritical fluid. 2 4. A method according to item 1 of the scope of patent application, wherein the article of manufacture includes a printed circuit board. 25. The method according to item 1 of the scope of the patent application, wherein the article of manufacture includes a Shi Xi wafer. 第19頁Page 19
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