TW493285B - A new grid electrode technique for LEDs fabrication - Google Patents

Abstract

A new grid electrode technique for LEDs fabrication and the LEDs with spreading layers have the more uniform lighting regions. Because of the lighting region is more brightness near the p-type ohmic metal sidewall without spreading layers, the lighting region in the square metal hole were not overlap to have the high brightness LED operation. When the square regions were reduced by p-type metal layer, and the light emitting of overlapping region were lighting in the all square metal holes at 20 mA in Fig. 4(3) compared with the LED with spreading layers in Fig. 4(1). The Forward voltage was the lowest value in this experiment with finger-like p-type metal lines. These finger-like p-type ohmic contact metal have the uniform light emitting region in the small square regions.

Description

Industrial application fields: One-color light-emitting body is the mainstream of the domestic outdoor display industry and the future development of new silk. The present invention can effectively focus on outdoor display elements to improve the luminous brightness of products. The background is a blue luminous n-body towel, which is made of low-gallium gallium and ferrocium gallium worm crystal thin material as a light-emitting gallium. In the conventional technology, __ technology defines N 5L and P-type gallium nitride materials on the front of the wafer. The area 'platform is a p-type nitrided material area. Electron beam-level vapor deposition _ dot-shaped nickel and gold double-thick metal (thickness greater than Sinai as P Wei pole; the structure shown in Figure 1 in the remaining moment The surface belongs to the N-type GaN material cage domain, which is a good money-face-_miscellaneous. On the platform, the 7 area of the P Weihua recording material uses the electron beam method to steam the nickel and gold double-layer thin metals (thickness and health). 20nm) As a whole p-type electrode film, the current can be injected into the light-emitting area by injecting a current, so that the whole area of the p-type hafnium nitride material on the platform emits light and the luminous brightness is improved. Because the traditional blue light-emitting diode is Luminous thin metal

The electrode makes the entire area of the light-emitting area emit light. 'The light transmittance of this thin metal electrode is about 80%.' It reduces the luminous efficiency of the element, and when the blue light-emitting diode is reliably measured, the thin metal electrode can be destroyed. # When the metal electrode is burned out, the operating voltage will increase and cause bad ^, so that the blue light-emitting diode will have a good yield when listening. The main object of the present invention is to reveal that the mesh electrode prepared by this method replaces the thin hair. The metal electrode simplifies the two processes of the original thick PW electrode and the thin metal electrode into a square thick p-type electrode to extend the formation of the electrode. This process provides an effective and time-saving process technology. The present invention discloses five new types of mesh electrodes, which use a lift-off technology and a metal-engraving technology (wet-coffee) to extend a thick p-type electrode to form a mesh electrode. Anyone who is familiar with the art will read the following detailed explanation of the preferred implementation of the 49328 ^ invention description (3) illustrated by different diagrams, and it will be very clear from the summary that the objects and advantages disclosed by the invention are described in detail. This kind of new-type electrode extends the original square p-type electrode to form an e-electrode, and lays on this mesh-shaped electric scale surface A. The two processes of the original p-type impurity and the thin metal transparent electrode are simplified, and the process is simplified into- The p-type electrode is extended to form a mesh electrode to avoid the high failure rate of thick and thin metal light-transmitting electrodes in the inspection surface. This is a hybrid technology to improve the success rate of the light-emitting diode system. i A method of manufacturing a mesh electrode of a light-emitting diode can use the photoresistance stripping (1 i ft off) technology and #etched metal technology (the ice of the 丨 ng) technology to achieve the process of the mesh electrode, the process technology details The columns are as follows. Method for producing mesh electrode of light emitting diode, using photoresist

493285

a ·) coating a positive photoresist on the surface of the wafer; b ·) exposing on a photomask aligner; C ·) removing exposed wire-shaped exposed electrode-shaped electrode areas on a test towel; d ·) plating a P-type metal electrode; And e.) Removing the rest of the photoresist using propane and lifting it off the surface of the nitride recording surface in the window area. In step (e), the metal on the window region is removed by using a metal side liquid to expose the gallium nitride surface. Based on the blue light-emitting diode is the future development of the domestic outdoor display industry and new light sources, Asahi ’s horse riding technology has been adopted to achieve the net electrode n material b gallium alloy indium crystal As a light-emitting material, a thin film can be used to produce a blue light-emitting diode. The hard blue light-emitting diode and the difficult electrode are as follows: (1). The p-type electrode minus the square and _ is extended to form a mesh electrode to replace the thin metal electrode in the light-emitting area. (2) Operating current of blue light-emitting diode: 10 milliamperes (mA) to 60 amperes, providing charge cycle (duty cycle): 10 nanoseconds (ns) to 10 milliamperes, (ms ). Duty cycle%: 〇 ″ ～ Μ⑽. Among them, the pattern of the grid electrode (as shown in Figure 9), the harvesting resistance stripping (-off) technology separates the gold in the money to form a light-emitting diode through which the light-emitting diode can pass. Changing the size can improve the overall light-emitting efficiency. And the number of light emitting counties, the light emission of the Saki electrode is defined by the length and width: its length ranges from 1 micron to 3 microns; the width ranges from i microns (μm) to 300 microns. In step (4), the line width of the 4 P-type metal electrode is from 0.05 micron (叩) to 1 micron and the thickness of the metal layer is 5 nanometers to 1 nanometer (1 micrometer. 0 nanometers). "Product name mesh electrode" on the shape structure: The company name, product name and person name are marked on the light-emitting diode by using strip-shaped electrodes ---, invention description (6) area 'to highlight its product characteristics. The processing method of the strip electrode is to use thick p-type electricity. ^ 51 (0tTO ^ „^ Father Tong University, abbreviation), person name (" C · F. Lin "in the picture), the author Lin Jiafeng's Yingyu, prepared for writing ) 'Using photoresist lift-off technology and wet-etching technology to achieve the process of strip electrodes.. The "finger mesh electrode" shown in Figure 4 is based on the p-type metal electrode ( (Square and round)) Strip-shaped metal wires are extended left and right, and finger-shaped strip-shaped metal wires are stretched out from the strip-shaped metal wires, so that the light-emitting area is uniformly illuminated in stripes. "Arc-shaped mesh electrode" shown in Figure 5, The radius of the arc-shaped electrode formed by the distance between the ρ-type metal electrode and the N-type metal electrode ranges from 10 microns to 3. The "track-shaped mesh electrode" shown in Figure 6 is a fixed P-type metal electrode to N-type metal electrode is formed by equidistant arc-shaped electrode, ρ-type metal electrode line width is from 10 microns to 15 microns and thickness is 5 nanometers to 5 nanometers to 0 nanometers and 0 nanometers) "'makes current distribution _ Uniform and high current density. Fig. 7 shows the grid-like encapsulation electrode ", the luminous chamber window of the grid electrode Small changes can be made to Lin & Wheel & Hair Filament, Probable Electrode Gold > 1 window window by ΙΙιϋΜΠΜΚΜΒΕ'Μ ^ ίΛυΜ · ^ gas 4m oil mu »·· —————— Page 10 493285 Description of the invention ( 7) 0.05 micron (μιη) ~ 300 microns, the size of the light-emitting room window can be defined by length and width: the range of M degrees is 1 micron (mesh) to 300 micrometers; the width range is 1 micron (μιη) to 1 micron The size of the light-emitting room window can increase the luminous brightness of the grid-shaped grid electrode. In the blue light-emitting diode, 'gallium nitride and indium gallium nitride worm-crystal film is used as the light-emitting material. The thin light-emitting electrode in the light-emitting area makes the whole area of the light-emitting area emit light. However, the light transmittance of this thin metal electrode is about 60㈣%, which reduces the light-emitting efficiency of the tree, and it is thin when the blue light-emitting diode is reliably measured. The metal electrode is easy to burn. In order to improve the luminous brightness and prolong the life of the light-emitting diode, the present invention adopts 2 new-type mesh electrodes to extend the original square P-type electrode to form a net-shaped electrode as shown in the figure. _Thin depends on A, in: two = reliable measurement When tested, this mesh electrode is not easy to burn. It emits light as compared to traditional thin metal electrodes, adopting __like electro-optical brightness and p. 493285. Description of the invention (8) to extend the life of the light-emitting diode. In the process of electrode extension to form a mesh electrode, both the photoresistance stripping technique and the metal-etehing technique can be used to achieve the mesh electrode process. A method for manufacturing a mesh electrode of a light emitting diode is The process of using _ side technology (etching) technology to achieve a mesh electrode includes the following steps: a. P-type metal electrode is plated on the wafer surface; b. Positive photoresist is coated on the wafer and metal layer; α is in a photomask Exposure on the collimator, d. Remove the exposed photoresist in the developer to expose the nitrided surface area of the window area; e. Use the metal side solution to remove the metal on the dragon and expose the nitrogen surface. Catalogue table f. Use the rest of Bina's Misaki to expose the mesh electrodes. In the process of extending the five P-type electrodes to form a mesh electrode, photoresist f)-and M-etching can be used. Page 12 493285 V. Description of the invention (9)

Process function of mesh electrode In order to improve the luminous brightness and extend the luminous diode

_-Type mesh electrode, the original square p-type electrode mesh electrode 'reliable measurement of this mesh is easy to burn at high current and long-term reliable measurement: contact # 侧 _ 蝶 极 来 长' new type The mesh electrode can be used for light transmission in the light-emitting room window. The P-type electrode metal is Ni / Au. The thickness of the Ni metal ore film is 5 nanometers to the surface nanometer and the thickness of the AU metal ore film is 5 nanometers to 5 nanometers. 〇Nano-layer metal can get ohmic contact on p-type gallium nitride layer. (1 micron touch nanometer).

3. Whether the photoresist-gift-off technology or metal-etching technology is used, a square p-type electrode is extended to form a mesh electrode in the process, and the product expected by the present invention can be obtained. 4. Operating luminous current range of blue light-emitting diode: 10mA ~ 60mA, Duty cycle of DC power supply: 10ns ~ 10ms,

Page 13 493285 V. Description of the invention (10) ----- Percentage of supply and discharge cycle of DC power supply (cycle cycle%): 〇 · 1 ~ 100% 〇 As mentioned above, the present invention has originality and novelty And progressive. Although the present invention is implemented with some chicks and exposed as above, it is not limited to Shuming. Anyone familiar with this technology can make changes and retouches without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the attached patent application.

Page 14 493285 Schematic description Schematic description: Figure 1 Cited from Nakamura journal picture Figure 2 Photograph of actual light-emitting diode and structure of each part 3 Product name Mesh electrode Figure 4 Finger-shaped mesh electrode Figure 5 Curved mesh Shaped electrode Figure 6 Track-shaped mesh electrode Figure 7 Grid-shaped mesh electrode Figure 8 Conventional UED with thin metal electrode glowing photo Figure 9 LED with mesh electrode glowing photo Figure number description: 1. N-type electrode 2. Thin metal electrode 3. P-type electrode 4. P-type gallium nitride epitaxial layer 5. Luminescent insect crystal layer

Page 15 493285 Brief description of the diagram 6. N-type gallium nitride epitaxial layer GaN epitaxial layer alumina substrate P-type electrode thin metal electrode 11. N-type electrode 12. Etching gallium nitride epitaxial platform 13. Adopt Thick P-type electrode production product name, company ("NCTU" in the picture is the abbreviation of "National Jiaotong University"), person name ("C · F · Lin" in the picture is the abbreviation of the author's English name Lin Jiafeng) 14. By thick P-shaped electrode extended finger electrode 15. Arc-shaped mesh-shaped thick P-type electrode 16. Track-shaped mesh-shaped thick P-type electrode 17. Checkered mesh-shaped thick P-type electrode

Page 16

Claims (1)

The patent application scope of the six's is 1. A method of manufacturing a mesh electrode of a light emitting diode, which is a process of using a lift-off technology to achieve a mesh electrode, which includes the following steps: a. On the wafer surface Coated with a positive photoresist, b. Aligned exposure on a mask aligner; c. Exposed light in the developer solution to expose the area of the mesh electrode, d. Plated a P-type metal electrode; and e. Use C The remaining photoresist is said to be removed and lifted off to expose the nitrided surface of the window area. 2. The manufacturing method as described in item i of the scope of the patent application, wherein the step is to remove the metal on the window region by using a metal solution to expose the surface of the gallium nitride in the window region. 3. According to the manufacturing method described in the first item of the application side, the process of using the photo-ionization technology to achieve the mesh electrode, using gallium nitride and nitride-crystal film as semiconductor light-emitting materials' can be made blue and riding Light-emitting diode. 4. The manufacturing method as described in the first paragraph of the patent application, which uses light off ⑽ ㈣ ^^^ .. l ^ tCwet-etching), ^ P 493285 Case No. 891223RR 6. The scope of the patent application and the production port There are five new types of mesh electrodes: mouth-shaped mesh electrodes, finger-shaped mesh electrodes, arc-shaped mesh electrodes, track-shaped mesh electrodes, and square-shaped mesh electrodes. 5 · If the application is to supplement the method mentioned in the third item, the mesh electrode and operating range of the blue and green light-emitting diodes include the following: · (1) · A square P-type electrode is used to form a mesh. Shaped electrodes replace thin metal electrodes in the light-emitting area; (2) · Operating light-emitting current range of blue and green light-emitting diodes: 10mA ~ 200mA, Duty cycle of DC power supply: 10ns ~ 1〇 〇〇ms, DC cycle power supply and discharge cycle percentage (duty cycle%): 0.01 ~ 100%. 0 • The manufacturing method as described in item 5 of Shenjing's patent scope, wherein the size of the light-emitting chamber window of the mesh electrode is in the range of 1 micrometer (μιη) to 300 micrometers; the width is in the range of 1 micrometer (μιη) to micrometer. • The manufacturing method according to item 1 of the scope of patent application, wherein step (d) p-type metal electrode wire rj 493285 _ case number 89122388 VI. Patent application scope Nanometer). YYYY_Modification 8 · —A method for producing a mesh electrode of a light-emitting diode. The process of achieving a mesh electrode using metal etching technology (wet_etching) includes the following steps: a. P-type on the surface of the wafer Metal electrode; b. Coating a positive photoresist on the wafer and the metal layer; c. Exposing on a photomask aligner; d. Removing the exposed wire in a developing solution to expose the surface area of the hafnium nitride surface of the window area; e. Using metal Gamma liquid removes the metal from the window area and exposes the doped surface; f. Uses the remaining light to remove the net electrode; g. Uses metal-side technology (wet-etching) to form a light-emitting diode on the metal side of the window The luminescence can pass through the luminous chamber t to complete the preparation of the forest-side difficult electrode. 9 · The method as described in item 8 of the scope of patent application, which is chest light_ 立 ⑽t_〇ff) Technology and golden shaft technology (yingcaing), make the thick p-type electrode into a mesh electrode, and the product name mesh electrode, finger mesh electrode, arc mesh electrode, track-shaped electrode, square new type E