TW493221B - Reaction tube for semiconductor manufacturing equipment, semiconductor manufacturing equipment, and semiconductor device manufacturing method - Google Patents

Abstract

The purpose of the present invention is to provide a reaction tube for semiconductor manufacturing equipment, semiconductor manufacturing equipment, and semiconductor device manufacturing method. In the invention, the thickness uniformity is improved by controlling the concentration of a gas so as to suppress a gaseous phase reaction at the outer peripheral section of a wafer when a CVD film is formed on the wafer along with the gaseous phase reaction. In order to increase the depositing area of a reacted product, an uneven surface 21 is formed in an inner tube 20. The surface 21 is formed on the internal wall surface of the tube 20 facing the outer peripheral section of a wafer W. Consequently, the concentration of a gas at the outer peripheral section of the wafer is lowered, and the formation of a film on the outer peripheral section of the wafer is suppressed so as to reduce the thickness of the film that is apt to become thicker on the outer peripheral section.

Description

493221 V. Description of the invention (1) [Technical field to which the invention belongs], m relates to a reaction tube for a semiconductor manufacturing device, a semiconductor device, and a method for manufacturing a semiconductor device, and more particularly, to a method for improving a film formed on a substrate Film thickness uniformity. [Known technology] In general, CVD devices are used to grow oxide or nitride films on wafers during semiconductor manufacturing. As shown in FIG. 8, this type of CVD device is provided with a reaction tube 10 vertically, and the reaction tube 10 includes an outer tube 2 for maintaining a vacuum, and an inner tube forming a gas flow path. It consists of inner tube 3. A resistance heater 1 is arranged on the outside of the reaction tube, and a plurality of wafers w are laminated and supported on the wafer boat 4 in the inner tube 3. This type of vertical CVD device is well known, as shown by the arrow, which allows the gas to flow from the lower part of the inner tube 3 to the upper part of the inner tube 3 and the gas from a discharge port 9 provided at the lower part of the outer tube 2. Expulsion. The wafer boat 4 is rotatably mounted on the turntable 8. This is because the in-plane uniformity of the film can be improved by performing rotation during film formation. ° ^ However, the shape of the component will shrink with the integration of 咼, and the production of 6.4M, 256Mbit (million bits) memory has begun. When the device is so reduced, there is a large difference in surface area between the "patterned wafer with a patterned shape on the surface of the device and the bare wafer with a mirrored surface without a patterned shape on the surface of the device" . The actual wafer surface area is larger in patterned wafers than in bare wafers. In this case, there is no question as to whether or not the above-mentioned CVD apparatus is used for rotation, and the following problems still occur.

Shang

j) Uneven film thickness occurs in the wafer surface. The consumption of j 'in the wafer surface becomes very large because of the large surface area of the pattern wafer. The question "' because the surface of the bare wafer is flat, it will be better than the pattern crystal: The method of spreading the gas in the wafer surface is worse: there is a large difference between the outer periphery and the central portion of the wafer. Therefore, the central portion of the wafer may cause insufficient gas and thin the film thickness. Therefore, the uniformity of the film thickness becomes worse than that of the bare wafer. When this is described in FIG. 7 'in the case of the bare wafer w (FIG. 7 (a)), f is on the wafer w When 02 and 15 are formed on the substrate, the film can be formed uniformly (Fig. 7 (b)). However, in the case of a patterned wafer w having a pattern 16 formed on the crystal (Fig. 7 (c)), the surface area is very large. Larger, so more gas will be consumed in the wafer surface, and the gas concentration in the central part will be smaller than the outer peripheral part of the wafer, and a Si 〇2 film 17 with a thinner central part and a thicker outer peripheral part will be formed. (Figure 7 (d)). Especially when using a silane-based gas (SiH4, etc.) to grow an oxide film or a nitride film, the outer periphery of the wafer becomes thicker. It is difficult to equalize the film thickness. (2) The film thickness will be uneven between circles in B. Compared to bare wafers, when setting the pattern, the overall surface area will be larger when the circle is set. There is a difference in the concentration of gas and the difference in the knife cloth. Therefore, the difference in film thickness distribution between wafers when using a bare wafer and when using a patterned wafer will cause differences. An annular clamp is provided on the wafer boat, and the gas flow path is sub-controlled to adjust the degree of suppression of the growth of the wafer peripheral portion and the central portion (for example, 'Japanese Utility Model Registration No. 2537563. Also 2, as shown in Figure 9 As shown in FIG. 10, a plurality of rings for holding the wafer w are provided on the pillars 7 constituting the plurality of branches (not shown in the figure) of the wafer boat 4 to hold the wafer w.

120357.ptd of I ·· "493221 V. Description of the invention (3), holder 6. Three annular holders 6 are provided at three places. The outer periphery of the wafer W is supported so as to be located from several places (the wafer supporting protrusions 5 in the example in the figure.) With such a structure, the space A between the gas holders 6 on the wafer periphery can be adjusted A) to accelerate the gas flow rate, and (the wafer w and the ring-shaped gas flow path (the space B between the wafer W)) The central part of the wafer is expanded to indicate the flow rate of the gas. By this, ☆ outside the wafer ;: Yi also uses arrows to reduce the film formation, and reduces the gas in the central part of the wafer. %, The degree of suppression is increased. However, it is difficult to design the gas flow path with respect to the above-mentioned ring clamp system of the patterned wafer, and in the current situation: 2 thick: whole, good results. In the experiment, although lacking; =: 2 too

^ The situation where the film becomes thicker is improved, but it is also found that the case where the film thickness becomes thicker at the center is also prepared. Although theoretically, it can be adjusted in the direction of the isotropic change of the film, but it is difficult to adjust the film thickness by the ring clamp, and the economy is also poor. Therefore, the cover boat described in the conventional technology disclosed in Japanese Patent Utility Model Registration No. 2 5 3 7 5 6 3 has attracted attention, and a technique for improving this problem has been proposed (Japanese Patent Special Kaiping No. 8-1 9 5 3 5 3). That is, as shown in FIG. 1 and FIG. 13, a cylindrical boat cover 30 for covering the boat is provided inside the inner tube 29, and the boat cover 30 is formed on the boat cover 30 so that A plurality of through holes 34 through which the reaction gas flows. The boat lid 30 is usually made of quartz. Divide the crystal boat cover 30 of the same shape into two halves. Then, the inner surface of the boat cover 30 is further formed with the uneven surface 35 to increase the surface area.

No. 6 1 493221 V. Description of the invention (4) More reaction products (thin films) are accumulated, and the number of stacked crystals is reduced, and the amount of accumulation in the outer periphery is reduced to reduce the thickness of the wafer and increase the film thickness. Thick uniformity. I. Peripheral [Problems to be Solved by the Invention] The Japanese boat cover described in Japanese Patent Application Laid-Open No. 8-19593353 mentioned above has the following problems. Compound 1 will require structure in addition to the inner boat cap as well as the inner tube. In addition, various processes such as through holes, racks, and large lifting elements must be performed on the boat cover. (+) Although the inner side of the wafer boat cover is formed with a concave and convex surface, when it is exemplified: when it is formed by sand processing, a fine concave and convex surface may be caused, even if the reaction gas reaches the substrate = film forming operation. Fill it up immediately. Also according to (3), in order to take out the wafer w, the wafer boat 30 is divided into two so that the wafer W is supported on the rack 32, but if it is: cover 3. "Dust pollution occurs when there is a problem, and there are questions attached to the crystals." The title "Title" is to solve the problem of the conventional technology. Its Γΐ =: a simple structure and can improve the uniform film thickness during film formation. Γ The industry ’s most efficient and inexpensive semiconductor manufacturing equipment reaction device, semi-nuclear body 2 manufacturing device and semiconductor device [solution to the problem] ° / The first invention relates to a reaction tube for a semiconductor manufacturing device, its characteristics

89120357.ptd Page 7 V. Description of the invention (5) The feature is: forming a concave-convex surface with one or a plurality of inner surfaces to enlarge the accumulation of the reaction product / = the periphery; the body manufacturing device, its characteristics It has an inner wall surface opposite to enlarge the reaction product center = the outer peripheral portion / the first and second inventions, although the concave-convex surface is formed as a portion facing the outer peripheral portion of the substrate 3 &amp; near the soil surface . It is also possible to form bumps on the two adjacent parts of the two adjacent ridges, which also include the corresponding products. (Reverse film, SiO2 film). This film is deposited on the substrate. Example 7: The film (high temperature oxidation tube inner wall ±. The gas refers to the disk, and the tritium is also deposited on the anti-Si H4 series gas... The so-called concave-convex surface that enlarges the surface area (here, the hole refers to a pit, not a combination of holes and holes, etc.) The concave-convex surface does not include the following: Immediately filling the micro-c operation caused by processing can also be formed in trenches such as vertical trenches or horizontal trenches; 20%: It can be achieved by etching. From <^ Circit Rishouyi cutting processing or: Ξ ί: :: = 部!: = The inner wall of the reaction tube is formed by increasing the surface area and accumulating the reaction on the inner wall of the reaction tube. The concentration of the reaction tube will increase. This is because the gas concentration in the outer periphery of the substrate is equalized. The outer periphery of the substrate can be equalized. According to the second &amp; second invention of the substrate towel, the gas is directly 493221 on the inner wall of the reaction tube. 5. Description of the invention (6) It is necessary to form a concave and convex surface, so it is not necessary to provide a boat with a different member from the reaction tube. Cover, which can greatly simplify the structure. The wafer boat cover is conventionally provided inside the reaction tube, and the inner wall surface is formed into a complicated structure formed by an uneven surface. The uneven surface can also be formed into a simple structure of the inner wall surface of the reaction tube, and the uniformity is formed in the substrate surface. The third invention relates to a semiconductor manufacturing device according to the second invention, which has a longitudinal boat inserted inside the reaction tube constituting the inner wall surface, the reaction tube system is formed in a cylindrical shape, and the unevenness is The surface is formed at the same density in the circumferential direction of the inner wall surface of the reaction tube. If this is the case, the inner wall surface of the cylindrical reaction tube has the same density in the circumferential direction. A more uniform thin film is formed on the surface of the substrate. A fourth invention relates to a semiconductor manufacturing device according to the fourth invention, wherein the vertical wafer boat has the aforementioned substrate with a plurality of laminated layers and ^; ^; Shaped clamps are provided on each ring-shaped clamp to support: •• A plurality of substrate supporting protrusions on the outer periphery of the substrate. Each of them generally includes: a plurality of Pillars; the outer periphery of the plural plates; = plural; = the space enclosed by the pillars is slightly different from that of the base. The extension direction of the pillars is at an appropriate interval = t the protrusions for support, as in each ring center holder # Ϊ 爽 Holds the ocean to support the substrate. The surface, cocoa can be expanded between the center of the substrate, and the distribution of other cubes is gathered;] because the gas concentration and gas phase reaction can be suppressed &quot; 可 板 493221 five 2. Description of the invention (7) Equality. "", It is clear that the ring-shaped clamp is used to suppress the rolling phase reaction of the outer periphery of the substrate. Since the inner wall surface of the reaction tube is formed with the uneven surface to match the outer surface of the substrate. Therefore, a thin film with higher uniformity can be formed on the substrate. The f-fifth invention relates to a semiconductor manufacturing device according to the third invention, and the width and depth of the concave portion of the uneven surface and / or the convex portion are all left. ; When the width and depth of the concave or convex part of the uneven surface are about lmm or more than two! Since there is ample space on the surface area, it will not fill up due to the reaction. However, the width of the concave or convex portion of the t-convex surface and the j chapter: about lmm, because the surface area is very small, it can be made according to the film formation: that is, filling, and this can make the reaction products pile up The effect is the original {. According to the present invention, since the area of the inner wall f of the reaction tube can be sufficiently secured, a more uniform thin film can be surely formed. 2: :: Invention 'is a semiconductor manufacturing device according to a third invention, wherein the surface area of the uneven surface described in 1j varies depending on the site. In the same manufacturing process, a semiconductor manufacturing device I that performs film-forming operations on a plurality of substrates is formed on the substrate according to the position of the reaction tube. The "mr body manufacturing device" generally has an upper part thereof: and, = π. The intersection tends to become thicker at the center of the substrate in the lower part. Due to the recession, in this case, 'the positive film side of the upper part of the reaction tube is larger than the lower part of the reaction tube: cut into an uneven surface. Time, winter. Right according to the present invention, because the surface area of the uneven surface is J 厶 厶 丄 5. The description of the invention (8) varies from site to site, so an equal seventh invention can be formed between substrates, which is related to the aforementioned reaction. The tube is a component piece, and preferably the inner wall surface of the reaction tube is formed by a grinding method. In order to facilitate the group setting, it is necessary to form these pieces with an uneven surface. The inner wall of the reaction tube itself is formed, but the inner wall of the tube formed by a plurality of component pieces responds to high dimensional accuracy of the concavities. In addition to the first type, the first concave component piece is constituted by two. If the tube is divided, insert the first to third or third best convex surface of the thin third invention of the tube system, but the best one is the inner wall of the buckling part, and the effect film of the fifth invention can be obtained by cutting the recess. The components formed by semiconductor manufacturing are divided into reaction tubes. Although they can also be engraved, they can be engraved in multiple structures. Although they can also be formed into the reaction tube by convex and concave surfaces to make it easier, they are also placed. 'It is divided into a plurality of pieces and assembled on the piece by the previous concave-convex method, and the convex-formed member is assembled on the opposite side, and the eighth invention can be mentioned, which relates to a semi-conductor semiconductor manufacturing device having an inner wall surface and The semi-conductor is used to support a plurality of substrates in a vertical type. The vertical wafer boat is inserted with the gas, and the introduced reaction is formed on the inner wall of the cylindrical reaction tube, so that the outer periphery of the plurality of substrates is stacked on the substrate. A method for manufacturing a conductor device other than a plurality of substrates is a method for forming a body device for forming a cylindrical reaction tube having an uneven surface, and is characterized by inserting a crystal boat into the circle The gas introduced into the reaction of the inner tube-like cylindrical reaction tube to the reaction the reaction product deposited on the uneven surface of the shaped surface by the accumulation of reactive gas concentration decreased to reduce the amount of reaction product on the circumferential portion.

89120357.ptd Page 11

493221 V. Description of the invention (9) '&quot; Semiconductor devices include semiconductor devices using S 丨 substrates, and liquid crystal displays in which semiconductor devices are formed on a glass substrate. According to the present invention, since a semiconductor manufacturing device capable of manufacturing a semiconductor device having excellent film thickness uniformity is used, a semiconductor device having a good yield and excellent characteristics can be obtained. [Embodiment of the invention] The embodiment of the present invention will be described below. In the embodiment, a relatively large number of counter-products are accumulated on the inner wall of the reaction tube opposite to the outer periphery of the patterned wafer, and the inner wall of the reaction tube is formed with a concave-convex surface in order to reduce the gas concentration in the outer periphery of the circle. Go to ^ ^ ^ x @ + f + accumulator. The basic structure of the CVD apparatus used in the embodiment is the same as that shown in FIG. FIG. 2 is an explanatory diagram showing the formation of the inner wall of the reaction tube with an uneven surface. The inner wall surface of the quartz structure f = 20 is usually mirror-finished (Fig. 2), but in the embodiment, it is formed with a concave-convex surface 21 in order to expand the surface area. The concavities and convexities formed by the Hexi processing will be filled up by the film-forming operation several times, and the effect will immediately become better, p 殳 nil. Therefore, depending on the grinding process, it is necessary to ensure a certain degree of unevenness / woodiness d and visibility t. To 1mm X 1mm or more (Figure 2 (c)). / And what shape of the inner wall surface of the inner tube 20 is uneven. As shown in FIG. 3 (the surface area can be enlarged, it can also be set as shown in FIG. 8a), and a linear longitudinal groove 21a can be formed along: as shown in FIG. 3 (a), also formed as: Or spiral-shaped horizontal groove 21 b, such as (] () — hole 21 "here the so-called hole preacher is Figure 3 :), so two or two can also be made into a large number, or ... ί :: instead of a through hole), the part formed in the inner S 20 to form a concave and convex surface is used as a part other than the wafer W

Page 12 493221 -------- V. Description of the invention (10) ----------- = Ϊ ::! 二 二 =, So, / / When the film: Crystal boat 25 can be referred Take stone within 20. In this inserted state, a separating surface 21 is provided on and inserted into the inner tube. In the outer periphery 5 of the outer tube 22, "lower heater L, Nakamoto lower Qiu Jialuo ;; τ23 series A starts from the bottom of cu, upper heater II in sequence. The concave central upper heater circle area 1 performers. The formation of convex surface 21 , At least for the U: shown on the right side of the crystal, the CVD device of the reaction tube will have the wafer center as shown in the lower part of Figure 1 :; The inner tube 2 f of the surface 21 tends to be thicker. Therefore, it is also possible to change the surface of the concave-convex surface 21 by using the position of 卩 °. The surface area of the concave-convex surface. With this, the surface area T 4 of the lower concave-convex surface can be divided from the wafer surface to the wafer surface. The thickness of the inner wall of the inner tube (element wafer &lt; integration degree) and the surface area of the inner tube can also follow the shape of the pattern ^. In terms of forming the inner wall of the inner tube with the convex surface ^ convex surface, it becomes the inner wall surface of the inner tube. Although it can also be concave: and it is composed of a plurality of members; it can also be formed on the inner wall of the inner tube by dividing the concave Λ surface. 'And insert these into the inner tube as a group; for example, as shown in Figure 4, _____: members are divided into multiple in the circumferential direction (illustration 89120357.ptd page 13 V. Description of the invention (11) In the example: 3) The arc shape + μ forms a concave-convex surface 2i. Concave: 2 pieces of 26, and the inner peripheral surface of this is because it is not round: 2 Wide example: It can also be formed by cutting. It can be easily processed in the early position and the unit piece 26 is a unit m. I p = the width and depth of the concave-convex concave portion above the left and right sides and the depth of the knife piece 26 are inserted into the inner tube 20 and assembled and fixed inside Easy to assemble = :; Department: Performed by fusion method, etc. In order to make these mutually drink tfL: Nine plurality of component pieces 26 'settings can also be composed of quartz; =. Material, component pieces with 0 ± f + Even if Shi Shi is made of quartz, it can be cheaper when divided into 3 and μ-days. "It can be cheaper than one or two." In this way, the inner tube and the uneven surface member are composed of different members. , ::, and other integrated day-to-day operations can make it easier to have concavo-convex surfaces; post-manufacture, and can improve concavity Dimensional accuracy of the convex. &Lt; Internal officials, as described above, if the inner wall surface of the inner tube opposite to the outer periphery of the crystal can be increased according to the uneven surface 21, the inner side of the inner tube has a large amount of accumulation. Reaction product (thin film). Therefore, the concentration of the reaction gas near the outer periphery of the wafer W will be reduced in the ground, and the amount of the reaction product will be reduced compared to the outer periphery of the wafer W. The central part can alleviate wafers whose film thickness is easy to increase. ": = Increases, and the difference in film thickness between the central part and the peripheral part of the wafer w becomes smaller, and f makes it possible to produce a uniform film thickness even for pattern wafers. High-performance film. That is, when the film formation conditions are a temperature of 78 ° C, a pressure of 80Pa, a gas flow rate of 25ccm, and a temperature of 250cc for N205, the data of the film thickness uniformity is ± 2% when each application form is implemented, compared with the non-implementation. 6% of the time soil also greatly improved the &amp; Guan ^ juice. even if

People, the above implementation of the true nurse daughter Dashi ,, ... ^ H Hanga Keshu's ring clip pull 1 from t: is also valid. When using a ring-shaped clamp, the film thickness adjustment is also performed by the 2: and crystal 2 itself, but as described in the above 2: ring-shaped J holder, by using the above-mentioned embodiment = ring-shaped inexpensive film Thick adjustment. Here, f Ding is relatively easy to use and as shown in FIG. 11, the holder 4 is held in the inner tube 3. In the space surrounded by a plurality of pillars 7, a wafer boat having a plurality of pillars Y is set by the complex | 彳 & °, and an extension of the slightly supporting pillars 7 is installed at appropriate intervals in the direction of the boat. RING Clamp 6. A plurality of the same shape of the outer periphery of each ring :: eye 囫 β is also floated and used to form a two-day: death surface so that it rises 5 from the ring. In order to change the characteristics of the cover #: a plurality of wafer support protrusions in a circle W are enlarged in the rearward direction (with “:: =; 6 advances), and the ring holder 6 is oriented toward the J opening diameter b to be larger than the wafer w diameter. ^ (B &lt; a) °, that is, the center of the wafer and its neighbor, the holder 6 is covered, and the periphery is adjacent to it ^ = The interval between members η, which is smaller than the outside of the wafer, because the opening diameter b can be made smaller than the diameter a of the wafer W, so that the concentration of the milk body and the gas distribution are concentrated. In the central part of the wafer 89120357.ptd Page 15 493221 V. Description of the invention (13), the uniformity of the film thickness can be improved. In addition, the shape of the wafer causes the annular misalignment to form a pattern of m σ μ η m Pitch n. The opening of the person to be held is different to change the unevenness of the upper / wall surface between the wafers to increase the surface area and form a film: Inch, a more uniform thin film can be formed on the pattern wafer Fig. 5 shows that the inner wall surface of the inner tube is formed into an uneven shape ^ ^ t ^ ® ^ tb, (J 〇Mscal xt ^ ^ (Mbl t) &gt; ^ ^ f, i ^; 1: Λ ^ ^ ' M (-hn ^ riz \ 地面 面 吕 Also for the surface of 1 $ Hehua sheep (processing rush). This series shows the matching set

The pictures of Mbi t, 25 6Mbi t, the next day m, 隹 —Shi and the knife are 16Mb 11, 64, and the eight are well-established. When the pattern crystal is advanced into a film, the surface area ratio is about one, two, or three times that of the blade. Thousands of poles Figure 6 shows the method when the shape of the dislocation has been improved. The horizontal axis indicates the integration degree (Mbit) ^ • W-shaped proportion (Figure 11). Here, the vertical axis + n λ &, the vertical axis represents the wafer pitch η (reference port), and the integration degree is 16Mh i + n, uu. + 25 6Mb1t ^ Bt.ai ^, t ^ MB, , aKf ^; 64 ^ 1; ^ v is the case of 8.5 bandits, l0_, 13.5mm. B, compared with the person / knife, therefore, it can also be determined within the above-mentioned ratio method 'and staffing degree'. The surface area of the tube is processed densely: ®® pieces are made into opening diameters to improve the uniformity of film thickness. &Amp; &amp; Determine the ring clamp. In addition, in the embodiment, although it is a two-layer reaction tube, Example, and in the inside, the surface formed with the outer "pound, but the present invention is also applicable ;: the case where the unevenness is formed on the inner wall surface of the single two, and the% S is used. This case is related to

493221 V. Description of the invention (14) Within the single tube, the present invention is also effective. The gas-phase reaction is very different and the "segmentation type of the semiconductor substrate of the present invention [the effect of the invention, if the device of the present invention is included, except for the cover], etc., if the peripheral part of the substrate according to the present invention should be stacked The ground is stacked here, and the reaction is thinned, and the substrate can be evenly aligned. The substrate with a pattern according to the present invention can improve the work efficiency. [Element No. 1 Electric 2 Outside the body manufacturing tube, that is, the specific direction of the conductor manufacturing reaction The inner part of the outer periphery of the tube inner plate is easy to form and the outer peripheral film is formed. The conductor device can be formed automatically. In addition, it can be explained that the reaction for the resistance heating tube placement does not use a thin film forming device, and the simple part of the wall surface reacts to generate more base film thickness than the substrate on the substrate, which is highly isotropic and inexpensive. An uneven surface is formed thereon. Thousands is effective for HTO film. Even for LT0 film and SiN film 卞 s, it can be applied to film formation related to SiH4 series, TE0s, etc.卞 Can be applied not only to a batch of 4 devices processing a plurality of substrates at a time, but also to a semiconductor manufacturing device that processes 1 or more pieces at a time. The tube is used in the wafer cap for semiconductor manufacturing (b 0a) on the substrate. With the formation of a concave and convex surface and a single structure, the amount of material on the inner wall surface of the reaction tube can be reduced. The film on the outer periphery of the plate will be poor It becomes smaller, and the overall method 0 is manufactured even when a clean film is not formed.

89120357.Ptd Page 17 493221 V. Description of the invention (15) 3 Inner tube 4 Wafer boat 5 Wafer support protrusion 6 Bad shape holder 7 Pillar 8 Rotary table 9 Discharge port 10 Reaction tube 15 S i 02 Film 16 Pattern 17 S i 02 Membrane 20 Inner tube (reaction tube) 21 Concave-convex surface 21a Vertical groove 21b Horizontal groove 21c Hole 22 Outer tube 23 Split heater 24 Insulation tube 25 Wafer boat 26 Component piece 29 Inner tube 30 Crystal cover 32 Rack

89120357.ptd Page 18 Through hole Concave-convex wafer (substrate) 493221 V. Description of invention (16) 34

35 W 89120357.ptd Page 19 493221 Brief Description of Drawings Figure 1 is a schematic configuration diagram of a CVD apparatus according to an embodiment. Fig. 2 is a structural diagram of the inner wall surface of the inner tube; (a) is a conventional mirror surface processing = '(b) is an uneven formation surface of the embodiment, and (c) is an enlarged view of the (No.) part. (A) is a longitudinal groove, and (b) is a diagram of a hole formed by a horizontal groove in the embodiment.) Is a knife. Figure 4 is a view of the inner pipe of the embodiment. Step chart of the composition on the inner wall. Components of the eight male concave-convex surface Fig. 5 is an explanatory diagram of the inner wall surface method of the inner tube according to the embodiment.比例 Proportion of integration degree of one mouthful of sheep Fig. 6 is an explanatory diagram of a ring-shaped clamp according to the embodiment. Proportional method of integration degree of chemical conversion Figs. 7 (a) to 7 (b) are explanatory views of film forming shapes of a bare wafer and a pattern wafer. Fig. 8 is a schematic configuration diagram of a CVD apparatus according to an embodiment. Fig. 9 is a plan view of a ring-shaped clamp according to a conventional example. Fig. 10 is a cross-sectional view illustrating a ring-shaped clamp according to a conventional example. Fig. 11 shows the description of the ring-shaped clamp of the embodiment. Fig. '(B) shows the opening diameter () of the ring-shaped clamp. Illustration of j-plane. The relationship between the size of the day and the day after straightening Fig. 12 is an exploded perspective view of the covered crystal boat of the conventional example. FIG. 13 is a plan view of a conventional wafer-shaped wafer boat with a cross section.

89120357.ptd Page 20

Claims (1)

m, ί2. 81 Revise the date of the zombies / correction / correction / supplementary month θ correction — ^ --- Case No. 89] 20357, patent application scope], ..— a reaction tube for semiconductor manufacturing equipment, which is characterized by unevenness The surface is formed with one or plural _ # +… surfaces, and L7 is used to replace the inner wall of Shiyingmiao ’'two bases to expand the area where the reaction products accumulate. 2. A semiconductor manufacturing device, which is characterized by: ^ There is a reaction tube 'which uses an uneven surface to form an inner wall surface opposite to the outer periphery of one or more substrates to expand the area where the reaction products are accumulated. The reaction tube inner plate is used to hold one or more of the first one.依 夕 其 〇3. As described in the second patent application semiconductor manufacturing device, wherein the holder is a vertical crystal, the aforementioned reaction tube system is formed in a cylindrical shape, and the uneven surface is formed at the same density In the circumferential direction of the inner wall surface of the aforementioned reaction tube. 4. The semiconductor manufacturing device according to item 3 of the scope of application for patent, wherein the aforementioned κ-day boat is provided with a plurality of ring-shaped clamps which are laminated with a plurality of substrates and are supported by the supporting building. Holder Each of the ring-shaped clamps is provided with a plurality of substrate-supporting protrusions for supporting the corresponding peripheral portion of the substrate. 5 · The semiconductor manufacturing device according to item 3 of the patent application scope, wherein the concave portion or / and convex portion of the concave-convex surface described above The width and depth of the part are more than about 1 min. 6 · If the semiconductor manufacturing device of the third scope of the patent application, the surface area of the aforementioned uneven surface varies depending on the location. Wherein, the aforementioned reaction tube divides the member formed by the uneven surface into a plurality of member pieces, and inserts the member pieces into the reaction tube and assembles in the reaction II. 89120357.ptc Page 21 493221 _Case No. 89120357_ Year Month and Day_ί ±± _ 6. Scope of patent application The inner wall surface of the tube constitutes. 8-A method for manufacturing a semiconductor device, which uses a semiconductor manufacturing device provided with a cylindrical reaction tube having a concave-convex surface formed in the circumferential direction of the inner wall surface to manufacture a semiconductor device, and is characterized in that it will be used to support a plurality of A vertical crystal boat of the substrate is inserted into the cylindrical reaction tube, and a reaction gas is introduced into the cylindrical reaction tube into which the vertical crystal boat is inserted, and the reaction product is introduced to deposit reaction products on the circle. By using this accumulation, the unevenness on the inner wall surface of the cylindrical reaction tube reduces the concentration of the reaction gas at the outer periphery of the plurality of substrates to reduce the amount of reaction products deposited on the outer periphery of the plurality of substrates. 89120357.ptc Page 22