TW492203B - Superconducting coherent electromagnetic wave oscillation device and its manufacturing method - Google Patents

Abstract

The invention relates to a superconducting oscillator that generates coherent electromagnetic radiation using a nonequilibrium state achieved when current is injected into a high-temperature oxide superconductor. Current is injected through a tunnel barrier layer (13) into a single-crystal superconductor (11) having a lamellar structure, and the resulting electromagnetic radiation is amplified in a cavity resonator (5) to produce intense coherent radiation. The superconducting oscillator is capable of amplifying and generating coherent electromagnetic radiation simply by supplying direct current without the need of applying a magnetic field.

Description

492203

V. Description of the Invention (1) [Technical Field] The present invention relates to a device for injecting electromagnetic waves by using a South-South superconductor to oscillate a device and a manufacturing method thereof. [Background Art] The current of a coherent electromagnetic wave is used to synchronize the electromagnetic wave with the non-flat one. The method of oscillation. "Extreme vibration", especially the realization of the state of oxidation balance, used to release the superconducting coherent electromagnetic wave vibration. The conventional superconducting electromagnetic wave oscillation device has Joseph (Joseph) AC effect oscillator. Irradiation type electromagnetic wave oscillating device and the like. ...

Related to such superconducting electromagnetic wave oscillation devices is β. D.

Josephson's proposal. In this proposal (phySics Letters, Vol. 1, 25 1 -253, 1 962), when the superconducting junction is shifted to a finite voltage, ultra-high frequency AC current flows in the superconducting junction, It emits electromagnetic waves corresponding to its frequency. In this method, electromagnetic wave oscillation can be performed, but electromagnetic wave oscillation having an amplification effect cannot be performed.

In addition, 'DN · Langenberg et al. (Physical Review Letters Vol. 15, 294-297, 1 96 5), BD Josephson proposed a review experiment, and successfully detected microwave power at 9GHz, but it could not be used for amplification. Of oscillation. In the proposal by T. Nagatsuma et al. (Journal 〇f Applied Physics Vol. 54, 33 0 2-33 1 1, 19 83), in a state where a magnetic field is applied to the long Joseph junction, an electric current flows through the junction, The Lorentz force is used to drive the quantum magnetic flux existing in the interface, which can oscillate a microwave of about 50 GHz, but it cannot be used to make it effective.

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Page 4 492203 V. Description of the invention (2) The electromagnetic wave oscillation of the action. In addition, in a proposal by Hechtfischer et al. (Physical Review Letters Vo 1.79, 1 3 6 5- 1 3 68, 1 9 97), a magnetic field is applied in a direction perpendicular to the C-axis direction of a single crystal of a high-temperature superconductor, and it can be detected. An electromagnetic wave of about 10 GHz is generated, but in this proposal, not only the principle cannot be used to oscillate an electromagnetic wave with amplification, but also a strong magnetic field needs to be applied. In addition, in the proposal of Tonouchi et al. (Japan Journal of

In Applied Physics, Vol. 35, 2624-2632, 1996), when a high-temperature superconducting film is irradiated with a fly (femto: 1 0-15) second pulse laser, it can oscillate in the megahertz band. However, it will be difficult to use its principle to achieve coherent electromagnetic wave oscillation. In the conventional method of the above-mentioned method, in principle, it is difficult to use a superconducting so-called homogeneity to perform an electromagnetic wave oscillation having an amplification effect. JThis is the first of this invention! The purpose is to propose that the superconducting coherent electromagnetic wave vibrating t y ′ is different from the known principle, it has a magic effect without the application of a magnetic field, and only uses the electromagnetic wave that makes the direct current flow coherent to vibrate. Easy method between 4 can enter 4 coherent electromagnetic wave oscillation

Φ In addition, a second object of the present invention is to provide a method for manufacturing a super device. [Disclosure of the invention] It is used to build the ^ π tuneable electromagnetic wave oscillation device for the first purpose, which is characterized by having a right brother jf 疋, a kind of super-transmission tunnel barrier layer, which has a layered wave source and a wave oscillation source. A superconductor structure of day-to-day structure ^ yzzuj Description of the invention (3) Tunnel bonding with the injection electrode, in a superconducting state, causes current to be injected into the above injection electrode to emit phase-aligned electromagnetic waves of the same phase. In addition, the second item in the scope of the patent application is a superconducting coherent electromagnetic wave vibrating device, which is characterized by: a cooling device that can cool below the transition temperature of the single crystal of the superconductor; an electromagnetic wave source, which is located in thermal contact, A cooling device; and a resonator for amplifying the radiated electromagnetic wave of the electromagnetic wave oscillating source; and the electromagnetic oscillating source has a tunnel barrier layer for tunnel bonding of a single crystal of a superconductor with a layered crystal structure and an injection electrode, A current is injected into the above-mentioned injection electrode to emit phase-aligned coherent electromagnetic waves. Nai Xibu, the third item in the scope of patent application by Gan Jia is a single knot of superconducting coherent electromagnetic wave oscillation device! : c The upper axis of the tunnel junction surface is formed perpendicular to the above-mentioned superconducting device. Another: Middle: ΐ The range of the 4th item is the superconducting coherent electromagnetic wave oscillation. The superconductor single crystal described by the current injection The area is carried out. The fifth item in the patent scope of the application is the superconducting coherent electromagnetic handle. The crystal is driven as follows: J uses the current injection described above to install the superconductor two into another unbalanced state. . The single-junction arrangement of the conductor is ‘where the sixth item of the patent scope is the selection of superconducting coherent electromagnetic waves. In addition, the above-mentioned current injection is a direct current. The anti-oscillation device, in which the seventh item of the patent scope is superconducting co-tuning tourmaline, worm, and the other; the above-mentioned single crystal of the superconductor in the above method has a magnification purpose. The fifth item in the scope of the patent application is superconducting coherent voltage 492203 V. Description of the invention (4), where the rate is 0. In addition, the application is on the other, and the application is on the upper band. In addition, the application, among which, the other, the application, among which is the other, the application, which has the above-mentioned other, the application, which benefits the area. In addition, apply, in which the natural oxygen of the upper crystal is conducted in this way by the South Temperature superconducting through the tunnel barrier to inject electricity into an unbalanced state to control the oscillation frequency of the above-mentioned homogeneous electromagnetic waves. The coherent electromagnetic wave is microwave radiation. The 10th item in the patent range is the oscillation frequency of the coherent electromagnetic wave described in the superconducting coherent electromagnetic wave oscillation from the microwave band to the trillion. The patent item 11 is the single crystal of the superconductor in the superconducting coherent electromagnetic wave oscillation device is oxidized High temperature superconductor. The 12th item in the scope of patent is a superconducting coherent electromagnetic wave oscillating device. The above-mentioned single crystal body of the superconductor is used as a resonator. Item No. 13 of the scope of patent is a superconducting coherent electromagnetic wave oscillating device, which is installed on the mesa structure part of the above-mentioned superconductor single crystal, and the tunnel barrier layer. The 14th item in the patent range is for the superconducting coherent electromagnetic wave oscillation. The area of the above-mentioned injection electrode is used to limit the injection of the current. The 15th item in the patent range is for the tunnel barrier material described in the superconducting coherent electromagnetic wave oscillation. Superconductor single junction film. The superconducting coherent electromagnetic wave oscillating device of the present invention forms a tunnel junction between a single crystal and a metal electrode, and an electric current is injected from the outer wall layer to drive the early crystal of the superconductor into a state, and the generated Change of charge

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Instead, it becomes electromagnetic wave, and it scales up to + 4 — A. Make A ji $ wee $ > χ σσ to enlarge it, or use a single crystal body '; ϊϊ: Amplification ... Used for coherent electromagnetic wave vibration. By injecting a current, the superconductor is single-knotted, so that the superconductor is transformed from the balanced particles of the red A ^ gate π to the unbalanced, sad, and unbalanced state: it becomes an unbalanced state, with its high moon 1 Tragedy stirs up a vibrating bear of charge. Using the vibration of the charge inside the single crystal of the superconductor, the electromagnetic wave is radiated into the free space from the crystal, and it can be amplified in the resonator, or it can be amplified by the crystal itself as the resonator.

In the superconductor single crystal, which has a current-voltage characteristic with a gap voltage between negative resistances, a combination of Joseph's AC effect and the vibration effect of charges can be used to obtain sharp homogeneous oscillations; Current injection is performed in a range in which the superconductivity of the superconductor single crystal is not destroyed. The exhaustion frequency varies depending on the material of the superconductor ', from the passive wave f to the megahertz band. In this way, by constructing a superconducting homogeneous electromagnetic wave oscillating device combining a superconducting body electromagnetic wave oscillation source and a resonator, a laser oscillating device of a superconducting body which has not yet existed can be realized. The 16th patent application scope used by the province to achieve the second objective is a type of superconductivity. The manufacturing method of a coherent electromagnetic wave oscillating device is characterized in that the project includes: the first process, a superconductor with a broad crystal structure, a surface of 纟 σ θ, a metal electrode being vaporized, and a tunnel barrier layer formed The second process is annealing, the third process is to apply a photoresist, and exposure and development are performed, the fourth process is to perform ion etching, and the fifth process is to form an electrode. In addition, the 17th item in the patent application range is a superconducting coherent electromagnetic wave oscillation device.

492203 V. Description of the invention (6) The manufacturing method of the invention, wherein the material of the above-mentioned tunnel barrier layer is the natural oxide film on the surface of the above-mentioned single crystal of the superconductor. In addition, item 18 of the scope of application for a patent is a method for manufacturing a superconducting coherent electromagnetic wave oscillating device, in which the fourth process of performing the above-mentioned ion etching is to form a mesa structure portion in the above-mentioned single crystal of the superconductor. According to this structure, it is possible to manufacture a superconducting coherent electromagnetic wave oscillation device using quasiparticle injection for microwave emission. [Best Mode for Carrying Out the Invention] Figs. 1 to 12 are used to explain in detail the best embodiment of the superconducting co-modulation electromagnetic wave oscillation device and the manufacturing method of the invention. In addition, the same symbols are used for substantially the same or corresponding components. FIG. 1 is a schematic diagram of a device structure of the superconducting coherent electromagnetic wave oscillation device of the present invention when liquid helium is used as a refrigerant, and FIG. 2 is a superconducting coherent electromagnetic wave oscillation device of the present invention when a refrigerator is used. The schematic diagram of the device structure. Referring to FIG. 1, the superconducting coherent electromagnetic wave oscillating device of the present invention is provided with a cooling device 3 which becomes a cooling device filled with liquid helium 1 to cool the superconducting body below the transfer temperature Tc; a cavity resonator 5 is provided at Among the cooling device 3; a waveguide 7 for taking out electromagnetic waves from the cavity resonator 5; and an electromagnetic wave source 10, which is fixed to a holding plate 8 inside the cavity resonator 5; A current bias source (not shown) supplies current to the electromagnetic wave oscillation source 10. The electromagnetic wave oscillation source 10 has: a superconductor single crystal 11 having a layered crystal structure in which a superconducting layer is laminated in the c-axis direction of the crystal axis; and a tunnel barrier

11111 ‘111 89111304.ptd page 9 V. Description of the invention (7) ____ The wall layer 1 3 ′ is formed on the superconductor single crystal j j; a large number of electrons are injected into the super-transmission via the barrier layer 13 along the channel. =: 11. In addition, "Ji" and "J2" in Fig. I indicate the supply of current, and the electrode of ":" is particularly called an injection electrode. The single crystal i i of the superconductor has a layered crystal structure and a Joseph junction structure. In addition, when the superconductor Er Hai = Jing: = rr DC current, the radiated radiation is emitted and it has an amplification effect.

Sr ^ Cu0 ^ 5

Tc is 1101 (where Bi / Sr J cy 2 7 ^ is "BSCC〇") 'transition temperature YBa h η / 2 C 2 C 3 〇y, or transition temperature Tc is 80 ~ 90] (of

Cu3 〇7_y (hereinafter referred to as Γγβ substance 901 (body, but is not limited to these, as long as 7m two-temperature superconductivity can be used in the present invention.) YBCO, a superconductor with excellent daily characteristics The γ can also be replaced by other Cu3 〇7-y, NdBa2 Cuq 0 _ 箄. Shaogu 'prime day exchange, for example, ErBa2 uses liquid nitrogen to replace transfer, and field ;: In the case of 2 conductors, The liquid helium of the refrigerant. In addition, the high temperature of χ dinitrogen is used as the electrode material for cold, and gold is used as the electrode material. The electrode of the electron injection side is used. In other words, when the square flow density of the main input area is 10-2 ~ 103 Λ / cm2, when the X is produced, the f is set, because the size of the single crystal of the joined electrical body is produced in a square cm, and f becomes larger The degree of superconducting leg is less than 2. In addition, the area of the electrode is 1 89111304.ptd Page 10 492203

V. Explanation of the invention (8) The tunnel barrier layer is used to join the single crystal of the superconductor with the metal electrode, and use the tunnel effect to inject electrons. The tunnel barrier layer ^ ^ can be a natural oxidized film portion of the bulk single crystal body, and the thickness is 丨 nm ~ 33. V degrees. Because the tunnel barrier layer is an oxide of a high-temperature superconductor, only the metal electrode is vaporized and formed on the surface. To. In addition, those who act as tunnel barriers can also use the growth method of steaming the heart ’s oxide film, such as γ, to form a thin film with a thickness of about 1 nm to 3 nm. As a cavity resonance source, install the resonance of an electromagnetic wave source. The condition of the iron is different depending on the resonance frequency. In addition, the resonance frequency p ^ is greatly different from the superconducting material used. The resonance frequency is, for example, 100 GHz at BSCC0 and 1 to 2 THz at YBC0. When the size of the cavity resonator is at about 1 GHz, it can be several digits or less. small. … The use of a superconducting coherent electromagnetic wave oscillating device with a refrigerator in the cooling device will be explained below. As shown in FIG. 2, a superconducting coherent electromagnetic wave oscillation device using a refrigerator is provided with: a chamber 21 that can be exhausted into a vacuum; a freezing head 23 of the refrigerator is provided in the room; a holding plate 25 is provided in The freezing head has good thermal contact; the electromagnetic wave oscillation source 10 is fixed to the holding plate 25; and the electromagnetic wave oscillation source 10 is a cavity resonator 27; a position is provided at the position of the chamber 21 facing the extraction hole 28 An optical window 29 is used to extract electromagnetic waves from the cavity resonator 27. The structure of the electromagnetic wave oscillation source 10 is the same as that shown in FIG. 1. In the following, an embodiment in which the body of the electromagnetic wave oscillation source is used as a resonator will be described.

Fig. 3 is a sectional view of an electromagnetic wave oscillation source according to the present invention. As shown in FIG. 3, the electromagnetic wave oscillation source 30 is provided with: a superconductor single crystal = having a mesa structure portion 31; and reflection films 32 and 32 provided in the superconducting moon bean list, the day-to-day date, and the day-to-day date. Two end faces; holes 34 are provided on one side of the reflecting film for taking out electromagnetic waves; a tunnel barrier layer 35 is formed on the mesa structure 31; electrodes 3 7, 38; and electrodes formed on the mesa structure 31 37 Injects an electric current to the superconductor single crystal 33 via the tunnel = wall layer 35. The electrodes 37 and 38 are on the same side of the superconductor single crystal 3 3, but the electrodes 38 can also be provided on the back side of the single crystal. The electrodes 38 shown in Fig. 3 are preferably formed at symmetrical positions. The superconductor single crystal 33 is the same as that shown in FIG. 1, but the formation of the mesa structure portion and the size designated as a resonator may be different from those shown in FIG. The superconductor single crystal 3 3 has a layered crystalline structure as shown in FIG. 3, and has a structure in which a plurality of Josephs are connected in series in the c-axis direction of the crystal, and electromagnetic waves radiated by the injection of current become parallel to the joint surface. The reflective films 32 and 32 only need to be capable of reflecting radio waves, and can be formed, for example, by vapor-depositing a metal film such as Ag'Au'Cu. The mesa structure portion 31 of the superconductor single crystal 3 3 is provided to limit the injection area of the current so that the electrode can be easily formed. Considering the degree of electromagnetic wave oscillation caused by current injection, it is used to determine the injection area to form a mesa structure of appropriate size. In addition, the size L of the superconductor single crystal 33 is determined by the superconducting material.

Page 12 5 Description of the invention (10) Design according to resonance frequency. For example, the size of the single crystal of the conductor 隹 oscillates at a frequency of about megahertz, which is less than about 2 degrees. In the case of "cm privacy", the injection area is 1. Fig. 4 is a schematic diagram of the structure of a single crystal body of a superconductor using the cold sum as a resonator of the present invention. In addition, the coil guide has the same symbol as the device of the electromagnetic wave oscillator. In addition, the same components shown in Figure 2 and Figure 3 are added with a superconductor single junction, i.e., a current supply. Fixed on the holding plate 25, = H ^, the electromagnetic wave vibration source 30 of the resonator, etc., can also use a plate-like bullet ', etc. :: Use adhesive or lubricant to fix Jin Mingtai & " Mechanical method. use. The function of the gate-tuning electromagnetic wave oscillation device. The superconductor single crystal Tc of the electromagnetic and vibration source is used to maintain the superconducting state.丨 Vehicles ”low, the degree of private equity = Figure 4 'First, the constant current of external circuits not shown in the figure is used to make the specified DC current flow to the electrode 37' The electrode 37 passes through the tunnel P The early wall layer 35 allows the electric current to be structured from the mesa, and the crystal 33. / The main junction is used for the single junction of the superconductor. Therefore, the tunnel barrier of the barrier layer 35 is used to inject J = in the crystal, and the excess material is stirred up. The chirped energy state is used to excite the dynamic state of charge and perform laser oscillation. . χ This oscillation is a sharp homogeneous oscillation based on the combination of the vibrational effect of Joseph's AC effect and charge. ...

492203 V. Description of the invention (11) Use the inside 33 of the superconductor to radiate electromagnetic waves. In the figure = single crystal device, the cavity resonance is used. 2 :: The coherent electromagnetic wave vibrates the single crystal body as a resonator. ^., Nine son 1 ^ 29 removed. Super pass 1 shown in Figure 1

In the coherent electromagnetic wave vibration 1 device, the waveguide is taken out. # 丁 & 传 V Electricity is produced in a range that will not destroy the superconductivity office | .. # ,、 易 ^ 、、 ’original superconductivity

injection. The oscillation frequency varies with superconducting curved bismuth ^ / ;, L MHz. The material-to-material ratio varies, and it can be from the microwave band to 叱 Figure 5 shows the current-voltage characteristics of the single junction s c, ^ ^ ^ ^ of the superconductor of the present invention. < How many months does the electric special electric f? MSCC〇 flow in the C # direction, the current is about 10,000 U. "can be made to correspond to the thickness of the crystal | multiple 2 = mouth in series according to the c-axis direction of the crystal The connection becomes a multi-branched current-voltage characteristic. 7/77 \ 2 of Example 6 The remaining microwave output detected at the receiving frequency of 6GHZ = electricity: It is necessary to flow in the negative resistance region. · In this negative resistance, In the present invention, the voltage appearing in the u: two domains is the gap current ^ μ. Current injection is performed in the gap voltage region of 6 Hz in the middle of the month. In addition, the transmission of the V body can achieve energy than the normal transmission γ B. In addition, the body's electron level The gate of energy difference: evil, but the superconducting b is produced directly in the superconducting junction 89111304.ptd 492203 V. Description of the invention (12) Electricity: voltage characteristics' The appearance voltage is called as shown in Figure 7 When the magnitude of the injected electric power is used to conduct the coherent electromagnetic wave vibrating device Joseph 7 / Fu / Fu / Air, in the case of the super BSCC0 of the present invention, the frequency of the electric / vibration surplus is controlled by the current. The frequency at the level of 100 GHz changes to approximately GHz. Unmarked Note ^ Affected_ Oscillation frequency using its power The 'receiving sfl frequency is equal to the superconductivity of the present invention in this way. The oscillation frequency can be controlled by injecting electric power. The wave oscillation I is set to the center. The following will refer to FIGS. 8 ~ 12. Manufacturing method U) ~ (.) ^ Ming _ of the superconducting conductive homogeneous electricity First refer to Figure 8, (a) the superconducting _ said = ^ clothing manufacturing steps. The surface is exposed, ⑻ using vacuum evaporation method ^ with; 50 cleavage to make the metal film clean. At this time, the superconductor is oxygen-complete " like Au's tunnel barrier layer 53 of 1 ~ 3nm. A ... The primary electrode is used to form the gas β / 10 / Γ. The basis is that The metal extracts milk from superconducting ions, and is used to form a thin metal oxide film, which captures the natural oxide film of the single crystal body.] After the oxide film is formed by the method of Qiao Chuan, a metal electrode is formed. The growth of Zhe Temple was followed by (c) in the atmosphere for 1 hour, 600 hours of its single crystal of the superconductor of the genus Membrane, and the two crystals were held on the holding plate 54. After (d) the use of The solvent is then solidified, and then according to FIG. 9, (e) Photoresist 56 = is used to specify the mask of the joint. Light and those: The joint area is about 0.01 to 2 ~. Clothing. At this time, then '⑴ use imaging to remove photoantiseptics, (g) use ion cutting technology 89111304, ptd page 5 5. Invention Explanation (13) The etching process is performed at an acceleration voltage of, for example, 250 V, and (h) a mesa structure portion 58 is formed. The mesa structure portion 58 is determined according to the etching conditions. It is referred to FIG. 10, (i) is vacuum-evaporated at room temperature ^ ^ The thickness of the film 62 to 100 Long Cheng =, (j) is separated in an ultrasonic environment to remove the resist 56. m⑴ is used to obtain the electrode lead 'evaporate the metal film 64, for example, to expose the electrode shape using a photomask for electrode shape formation at Ag:' 4: ir 2 / imaging 'is used for superconductivity shown in FIG. 11 The bulk single crystal 50000 mesa structure portion 58 forms an electrode lead. On the two sides of the vacuum crying with the superconductor soap crystal body as the resonance crying; two V brothers: ^ with the metal film of the degree of "1," and "1" added to the single crystal Its processing. The use is steaming-it can also be used again: noodles (") can be put into two: like to go, the light anti-money agent 56 of the joint, ⑷ 唧 nine anti-residue agent 7 2 and exposure. f times, (η) is exposure and development by removing the photoresist of the joint. Finally Α 着 # Even more, the metal film 74 is covered by the lamp. Taipa electrode leads were fully vacuum-steamed, and photoresist and mask were applied to the whole surface again for exposure, pattern production, and display. Turn on the light for large formation according to the method shown in Figure 1, Figure 2 or Figure 4. Install it according to the electromagnetic wave vibration source, and use the clip-on snap-fit method to make it. In addition, the present invention refers to those described in the examples, but without departing from the present invention 8911304.ptd page 6 492203 V. Description of the invention (14) Within the spirit and scope of the description, various changes to the embodiments can be made and omitted Therefore, the present invention is not limited to the embodiments described in this patent specification, but includes the specified scope and equivalent scope described in the patent application scope. [Industrial application possibilities] As mentioned above, The superconducting coherent electromagnetic wave oscillating device of the present invention has an amplification effect without applying a magnetic field, and can perform coherent electromagnetic wave oscillation only by a simple method of flowing a direct current, so it is extremely useful as a superconducting coherent electromagnetic wave oscillating device. In the manufacturing method of the superconducting coherent electromagnetic wave oscillating device of the present invention, quasiparticle implantation can be used for radiation The superconducting coherent electromagnetic wave oscillation device of the wave. [Explanation of the component number] 1 Liquid helium 3 Cooling device 5, 27 Cavity resonator 7 Waveguide tube 8, 25 Holding plate 10 ^ 30 Electromagnetic wave oscillation source 11 > 33 Superconductor Crystal 13 > 35 Tunnel barrier layer 15, 17, 37, 38 electrode 21 room

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89111304.ptd Page 18 492203 Brief description of the drawings Attachment: Detailed description and use of the embodiment of the present invention to indicate the unintentional use of the present invention. In addition, the embodiments shown in the drawings are used in combination. The scope of the present invention is specified, but it is only for explanation and easy to understand. In the drawings, the super twilight is the same as that of the present invention when helium liquid helium is used. . Magnetic i # is a schematic diagram of a device structure of the superconducting coherent electric / skin vibration device of the present invention when a cold bed machine is used. Fig. 3 is a sectional view of an electromagnetic wave oscillation source according to the present invention. Value = Yes & A schematic diagram of a device structure of a super homo / periodic electromagnetic wave oscillating device of the present invention using a single crystal body of a superconductor as a resonator. The result of the single crystal of the superconductor of the present invention is [8§ (: (:: case of electric voltage in the case of 0]. Lei + represents the output of the electromagnetic wave oscillated in the negative resistance region by the current injection in the present invention.) An example of measurement. Figure 7 shows the current-voltage characteristic diagram and the relationship between the receiving frequency and the injection force of the present invention. All (a) ~ Η) are engineering diagrams used to sequentially show the present invention and conduct coherent electromagnetic waves The manufacturing method of the oscillating device. All (e) ~ Q) are engineering drawings for sequentially showing the manufacturing method of the superconductive coherent electromagnetic wave oscillating device of the present invention. = 10 Whatever (i) ~ (k) are engineering drawings, which are used to sequentially show the manufacturing method of the σ-conducting coherent electromagnetic wave oscillation device of the present invention.

\\ 326 \ 2d- \ 89-09 \ 89111304.ntH Page 19 492203 Brief description of the diagram Fig. 11 is a top view of the electromagnetic wave oscillation source of the present invention. (1) to (0) shown in FIG. 12 are engineering drawings for sequentially showing the manufacturing method of the superconducting coherent electromagnetic wave oscillation device of the present invention.

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Claims (1)

6. Scope of patent application ",": ΪSuperconducting co-modulated electromagnetic wave oscillation device, which is characterized by electric 1 // flat source, which has a tunnel barrier layer to make the trick with a layered crystalline structure.丄 η ^ ^ Once, and, the next day, and the injection electrode are tunneled together, the superconducting sheet is inserted into the pen-level implant electrode to radiate the same-phase electromagnetic waves with phase alignment. 2 · —Cooling device The electromagnetic wave comes to the electricity and the electromagnetic superconducting into the above 3. If it is applied, the body single crystal superconductivity can be a spiritual source, the magnetic wave oscillation conductor is injected into the electricity, please patent to make the c-axis co-modulation electromagnetic wave oscillation above The device is characterized by having: cooling below the transfer temperature of the single crystal of the superconductor; thermal contact is provided in the cooling device; and a resonator, which is amplified by the electromagnetic radiation emitted by the spiritual source; and It is used to tunnel the layered crystal structure, ° and / or the main input electrode, so that the current beam is emitted, and 5 phase-aligned coherent electromagnetic waves are emitted. Superconductivity of item 1 or 2 The joint surface of the coherent electromagnetic wave oscillating device forms a perpendicular to the above-mentioned superconductivity. 04. If the scope of the patent application is No. 1 or 2, the current injection described by the above-mentioned superconductor is used. 5. If the patent application scope is No. 1 Or 2 position, in which the above-mentioned current injection crystal drive is used to become an unbalanced state. 6 · For the first or second position in the scope of the patent application, the above-mentioned current injection is performed in the gap voltage region of the superconducting homogeneous electromagnetic wave oscillating single crystal. The superconducting coherent electromagnetic wave oscillation of the above item is loaded with a direct current for superconducting coherent electromagnetic wave oscillation of the single junction term of the above superconductor. For example, the superconducting coherent electromagnetic wave oscillation device of item 1 or 2 of the patent application scope 492203 6. The scope of the patent application, in which the above-mentioned superconductor single crystal has an amplification effect. 8. For example, the superconducting coherent electromagnetic wave oscillation device of the scope of patent application No. 1 or 2 ^, which injects electric power to control the frequency of the above-mentioned coherent electromagnetic wave. 9. If the superconducting coherent electromagnetic wave oscillating device of item 1 or 2 of the patent application scope, wherein the above-mentioned coherent electromagnetic waves are microwave radiation. 10. The superconducting coherent electromagnetic wave oscillating device according to item 1 or 2 of the scope of patent application, wherein the oscillating frequency of the aforementioned coherent electromagnetic wave is from the microwave band to the megahertz band. 1 1. The superconducting homogeneous electromagnetic wave oscillation device according to item 1 or 2 of the scope of patent application, wherein the above-mentioned superconductor soap crystal is an oxide local temperature superconductor. 1 2. The superconducting coherent electromagnetic wave oscillation device according to item 1 or 2 of the scope of patent application, wherein the above-mentioned single crystal body of the superconductor is used as a resonator. 1 3. The superconducting homogeneous electromagnetic wave oscillating device according to item 1 or 2 of the scope of patent application, wherein the above-mentioned tunnel barrier layer is provided on the mesa structure portion provided on the above-mentioned single crystal of the superconductor. 1 4. The superconducting coherent electromagnetic wave oscillation device according to item 1 or 2 of the scope of patent application, wherein the area of the injection electrode is used to limit the injection area of the current. 1 5. The superconducting homogeneous electromagnetic wave oscillating device according to item 1 or 2 of the scope of patent application, wherein the material of the above-mentioned tunnel barrier layer is the natural oxide film of the above-mentioned superconductor single crystal. 1 6. —A method for manufacturing a superconducting co-modulated electromagnetic wave oscillation device, which has the following characteristics: 89111304.ptd Page 22 492203 6. The scope of the patent application The first project, on the surface of a single crystal of superconductor with a layered crystal structure, a metal electrode is vaporized and a tunnel barrier layer is formed; the second project is annealed; In the third process, a photoresist is applied for exposure and development; in the fourth process, ion etching is performed; and in the fifth process, an electrode is formed. 1 7. The manufacturing method of the superconducting homogeneous electromagnetic wave oscillating device according to item 16 of the patent application scope, wherein the material of the above-mentioned tunnel barrier layer is a natural oxide film on the surface of the above-mentioned single crystal of the superconductor. 1 8. The manufacturing method of the superconducting co-modulated electromagnetic wave oscillation device according to item 16 or 17 of the scope of patent application, wherein the fourth process of performing the above-mentioned ion etching is to form a mesa structure portion from the above-mentioned single crystal of the superconductor. 89111304.ptd Page 23