JPS63245973A - Superconducting element - Google Patents
Superconducting elementInfo
- Publication number
- JPS63245973A JPS63245973A JP62080419A JP8041987A JPS63245973A JP S63245973 A JPS63245973 A JP S63245973A JP 62080419 A JP62080419 A JP 62080419A JP 8041987 A JP8041987 A JP 8041987A JP S63245973 A JPS63245973 A JP S63245973A
- Authority
- JP
- Japan
- Prior art keywords
- group
- elements
- layers
- layer
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000002887 superconductor Substances 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 5
- 239000011737 fluorine Substances 0.000 claims abstract description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 4
- 239000011593 sulfur Substances 0.000 claims abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 3
- 230000000737 periodic effect Effects 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000470 constituent Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001257 Nb alloy Inorganic materials 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 229910052767 actinium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 235000019402 calcium peroxide Nutrition 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001849 group 12 element Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この発明は超電導素子に関し、さらに詳細にいえば、各
種電子部品、集積回路等に採用され、セラミックスを構
成要素とする超電導素子に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a superconducting element, and more specifically, to a superconducting element that is employed in various electronic components, integrated circuits, etc., and has ceramics as a component.
〈従来の技術〉
最近のエレクトロニクスの進歩は、シリコン、ガリウム
ひ素を初めとする半導体素子の発展に負うところが大き
い。<Prior Art> Recent advances in electronics are largely due to the development of semiconductor devices including silicon and gallium arsenide.
しかし、上記半導体素子では、処理速度、消費電力等か
ら限界があるので、より優れた、かつ多様な機能を有す
る素子の開発が進められている。However, the above-mentioned semiconductor devices have limitations due to processing speed, power consumption, etc., and therefore, efforts are being made to develop devices that are even better and have a variety of functions.
その一つとして、超電導が起こる臨界温度以下またはそ
の温度近傍で使用し、超電導転移時の特異な非平衡状態
において生ずる抵抗異常、電圧異常等を利用する素子（
以下「超電導素子」という）が注目されている。−例と
してジョセフソン素子があり、動作速度が極めて速いと
ともに、動作レベルが低いため消費電力が低く、今後の
エレクトロニクス技術の発展を担うものとして、大いに
期待されている。One such device is a device that is used below or near the critical temperature at which superconductivity occurs, and that utilizes resistance abnormalities, voltage abnormalities, etc. that occur in the unique non-equilibrium state during superconducting transition.
(hereinafter referred to as "superconducting elements") are attracting attention. - An example of this is the Josephson element, which has extremely high operating speed and low power consumption due to its low operating level, and is highly expected to play a role in the future development of electronics technology.
ところで、ジョセフソン素子を初めとする超電導素子は
、例えばアモルファスダイヤ、真性シリコン、シリコン
の上にコートされたダイヤモンド膜、サファイヤ等の熱
良導体基板の上に、素子としての機能を提供する素子本
体を設けた構造を有するものである。この素子本体は、
少くとも一部に、例えば鉛合金、ニオブ合金等からなる
超電導体を含み、この超電導体は、基板に直接接合した
り、または同じ素子本体を構成する半導体もしくは金属
等に接合した状態で配置されている。By the way, superconducting devices such as Josephson devices have a device body that provides the device function on a thermally conductive substrate such as amorphous diamond, intrinsic silicon, a diamond film coated on silicon, or sapphire. It has a built-in structure. This element body is
At least a portion thereof includes a superconductor made of, for example, a lead alloy, a niobium alloy, etc., and this superconductor is arranged in a state where it is directly bonded to a substrate or bonded to a semiconductor, metal, etc. that constitutes the same element body. ing.
〈発明が解決しようとする問題点〉
しかし、鉛合金、ニオブ合金等の超電導体を、上記のよ
うな基板、または半導体もしくは異なる金属等と接合し
た状態で形成すると、双方が異質の物質からなるもので
あるため、接合面での不整合によって、上記超電導体、
半導体、金属等の構造に歪や欠陥が生じ、超電導素子と
して特性の低下が生じるという問題がある。<Problems to be solved by the invention> However, when a superconductor such as a lead alloy or a niobium alloy is bonded to the above-mentioned substrate, a semiconductor, or a different metal, both of them are made of different materials. Therefore, due to the mismatch at the junction surface, the above superconductor,
There is a problem in that distortions and defects occur in the structures of semiconductors, metals, etc., resulting in deterioration of the characteristics of superconducting elements.
〈発明の目的〉
この発明は上記の問題点に鑑みてなされたものであり、
接合面での整合性を容易にとれ、良好な特性を保持する
ことができる超電導素子を提供することを目的としてい
る。<Object of the invention> This invention was made in view of the above problems,
It is an object of the present invention to provide a superconducting element that can easily match the bonding surfaces and maintain good characteristics.
く問題点を解決するための手段〉
上記の目的を達成するためのこの発明の超電導素子は、
基板および素子本体が、ともに周期律表Ｉａ族元素、Ｉ
Ｉａ族元素および■ａ族元素がら選ばれた少なくとも１
種の元素、Ｉｂ族元素、ＩＩｂ族元素およびＩＩＩｂ族
元素から選ばれた少なくとも１種の元素、並びに酸素、
窒素、フッ素、炭素および硫黄から選ばれた少なくとも
１種の元素を含むセラミックスからなり、このうち素子
本体を構成するセラミックスの少なくとも一部が超電導
体であるものである。Means for Solving the Problems> The superconducting element of the present invention for achieving the above object has the following features:
Both the substrate and the element body are made of Group Ia elements of the periodic table, I
At least one selected from group Ia elements and group ■a elements
at least one element selected from a species element, a group Ib element, a group IIb element, and a group IIIb element, and oxygen,
The device is made of ceramics containing at least one element selected from nitrogen, fluorine, carbon, and sulfur, and at least a portion of the ceramics constituting the device body is a superconductor.
より詳細には、Ｉａ族族元としては、Ｌｉ１Ｎ ａ ｓ
Ｋ ｓ Ｒｂ ％Ｃｓ等が挙げられ、Ｉｂ族元素とし
ては、Ｃｕ、ＡｇおよびＡｕが挙げられる。More specifically, as a group Ia group element, Li1N a s
Examples of the Ib group elements include Cu, Ag, and Au.
また、ＩＩａ族元素りしては、Ｂ ｅ ｓ Ｍ ｇ Ｓ
Ｃａ ｓＳ「、ＢａおよびＲａが挙げられ、ＩＩｂ族元
素と ・しては、Ｚｎ、ｃｄ等が挙げられる。ＩＩＩａ
ＩＩａ族元素は、Ｓｃ、Ｙやランタノイド系元素である
Ｌａ、Ｃｅ％Ｇｄ、、Ｌｕ等、アクチノイド系元素であ
るＡｃ、、Ｔｈ、、Ｐａ５Ｃｆ等が挙げられる。In addition, for group IIa elements, B e s M g S
Examples of Group IIb elements include Zn, CD, etc. IIIa
Group IIa elements include Sc, Y, lanthanide elements such as La, Ce%Gd, and Lu, and actinide elements such as Ac, Th, Pa5Cf, and the like.
また、ＩＩＩｂ族元素としては、Ａノ、Ｇ ａ 、、
Ｉ ｎ ｓＴＪ等が挙げられる。In addition, as IIIb group elements, A, Ga,...
Examples include I n sTJ and the like.
上記元素のうち、Ｉｂ族元素から選ばれた元素、ＩＩａ
族元素、■ａ族元素およびランタノイド系元素から選ば
れた元素、並びに酸素およびフッ素から選ばれた元素か
らなるセラミックスが好ましい。Among the above elements, elements selected from group Ib elements, IIa
Ceramics made of an element selected from group elements, group ①a elements, and lanthanoid elements, and elements selected from oxygen and fluorine are preferred.
なお、Ｉｂ族元素としてはＣｕおよびＡｇが好ましい。Note that Cu and Ag are preferred as the Ib group elements.
また、上記セラミックスは、一般式、
（ＡＢ）ＣＤ
１−ｘ Ｘ ２ ４
（式中Ａは、周期律表ｍａ族より選択された少なくとも
１種の元素を示し、Ｂは、周期律表Ｉａ族、ＩＩａ族及
びｍａ族より選択された少なくとも１種の元素を示し、
Ｃは、周期律表１ｂ族、ＩＩＩｂ族及びＩＩＩｂ族より
選択された少なくとも１種の元素を示し、Ｄは、周期律
表ｖｂ族、■ｂ族及び■ｂ族より選択された少なくとも
１種の元素を示し、係数Ｘは、Ｑ＜ｘ＜１の関係式を充
足する）で表されるペロブスカイト型であることが特に
好ましい。Further, the above-mentioned ceramic has the general formula, (AB)CD 1-x , at least one element selected from group IIa and group ma,
C represents at least one element selected from Groups 1b, IIIb, and IIIb of the periodic table, and D represents at least one element selected from groups Vb, ■b, and ■b of the periodic table. It is particularly preferable that the perovskite type is represented by the following formula (where the coefficient X satisfies the relational expression Q<x<1).
なお、ｖｂ族元素としては、窒素、■ｂ族族元としては
、硫黄、酸素、■ｂ族族元としては、フッ素、塩素、臭
素、ヨウ素がそれぞれ挙げられ、このうち特に酸素が好
ましい。The Vb group element includes nitrogen, the (2b) group element includes sulfur, oxygen, and the (2b) group element includes fluorine, chlorine, bromine, and iodine, among which oxygen is particularly preferred.
く作用〉
以上の構成の超電導素子であれば、基板と素子本体は、
基板と同一のセラミックスからなるものであるため、素
子本体を構成する超電導体は、基板または素子本体を構
成する他の部分に対して、接合面における整合性を容易
に保つことができる。In the superconducting element with the above configuration, the substrate and the element body are
Since it is made of the same ceramic as the substrate, the superconductor constituting the element body can easily maintain consistency at the bonding surface with respect to the substrate or other parts constituting the element body.
〈実施例〉 以下、実施例を示す添付図面によって詳細に説明する。<Example> Hereinafter, embodiments will be described in detail with reference to the accompanying drawings showing examples.
図に、超電導素子の一実施例として、光トリガサイリス
クの断面図を示す。光トリスガサイリスクは、基板（１
）、エミツタ層（２）、ベース層（３）をこの順に形成
し、ベース層（３）の上に２つの電極層（４）、（５）
を形成している。電極層（４）、（５）間にあるベース
層（３）の領域には、空乏領域（６）が形成されており
、この空乏領域（６）に所定波長の光が照射されるよう
になっている。また、各層（１）〜（５）のうち、基板
（１）、エミツタ層（２）、ベース層（３）は、半導体
として、電極層（４）、（５）は超電導体として形成さ
れている。The figure shows a cross-sectional view of a photo-triggered scissor as an example of a superconducting element. Optical trisgasilisk is a substrate (1
), an emitter layer (2), and a base layer (3) are formed in this order, and two electrode layers (4) and (5) are formed on the base layer (3).
is formed. A depletion region (6) is formed in the region of the base layer (3) between the electrode layers (4) and (5), and the depletion region (6) is irradiated with light of a predetermined wavelength. It has become. Furthermore, among the layers (1) to (5), the substrate (1), emitter layer (2), and base layer (3) are formed as semiconductors, and the electrode layers (4) and (5) are formed as superconductors. There is.
すなわち、この例では、上記各層（１）〜（５）は、（
Ｙ Ｂ ａ ） Ｃｕ Ｏ４なる組成のベロブ
ス−ｘｘ２
カイト型のセラミックス酸化物により構成されている。That is, in this example, each of the above layers (1) to (5) is (
YB a ) It is composed of a belobus-xx2 kite type ceramic oxide having a composition of CuO4.
この場合、上記セラミックス酸化物は、Ｘの値の変化に
よって超電導特性を示したり、半導体としての電導特性
を示す。また、上記各層（１）〜（５）は所定の混合比
のＹ、Ｂａ、Ｃｕ、Ｏを含む材料を用いて成形体を焼結
し、この成形体を真空蒸着法、プラズマＣＶＤ法、スパ
ッタリング法、液相工′ピタキシャル成長法等よにり蒸
着し、各層を順次積み重ねることによって作製されてい
る。また、各層（１）〜（５）の結晶構造、例えば単結
晶、多結晶、アモルファスの別についても成膜条件によ
って制御することができる。なお、空乏層（６）は例え
ば不純物原子のイオンプランテーションによって形成す
ることができる。In this case, the ceramic oxide exhibits superconducting properties or conductive properties as a semiconductor depending on the change in the value of X. In addition, each of the above layers (1) to (5) is formed by sintering a molded body using a material containing Y, Ba, Cu, and O in a predetermined mixing ratio. It is fabricated by vapor deposition by a method such as a liquid phase process or a pitaxial growth method, and by stacking each layer one after another. Further, the crystal structure of each layer (1) to (5), for example, single crystal, polycrystal, or amorphous, can also be controlled by film forming conditions. Note that the depletion layer (6) can be formed, for example, by ion plantation of impurity atoms.
なお、上記各層（１）〜（５）は、互いに異なる構成元
素を含有していてもよい。また、上記各層（１）〜（５
）を構成する構成元素とその組成比は、所望する電気特
性特性等に応じて種々組合せて使用することができるが
、共通した同種の構成元素で構成することにより接合面
における整合性をより一層高めると共に、組成割合を変
えることにより、絶縁体、半導体、超電導体等となりう
る元素を選択するのが素子を設計するうえで好ましい。Note that each of the layers (1) to (5) may contain mutually different constituent elements. In addition, each of the above layers (1) to (5)
) can be used in various combinations depending on the desired electrical properties, etc., but consistency at the bonding surface can be further improved by composing with the same kind of common constituent elements. In designing the device, it is preferable to select elements that can become insulators, semiconductors, superconductors, etc. by increasing the concentration and changing the composition ratio.
上記構成元素のうち、特に、周期律表ＩＩａ族元素およ
び■ａ族元素から選ばれた少なくとも１種の元素と、Ｃ
ｕと、酸素との組合せからなるものが好ましい。この場
合、周期律表■ａ族元素であるＹ１周期律表Ｈａ族元素
であるＢａ、周期律表１ｂ族元素であるＣｕおよび酸素
を、各層における共通の構成元素とする系において、上
記ＹとＢａ等との割合を変えることにより、絶縁層、半
導体層および超電導層等とすることができる。より具体
的には、（Ｙ Ｂａ ） ＣａＯ２からなる組
成においｘ ｌ−ｘ ２
て、Ｘが、０．８〜０．９等のものは、半導体としての
特性に優れ、Ｘが０．２〜０．４等のものは超電導体と
しての特性に優れる。Among the above constituent elements, at least one element selected from group IIa elements and group ■a elements of the periodic table, and C
A combination of u and oxygen is preferred. In this case, in a system in which common constituent elements in each layer are Y1, which is an element in group A of the periodic table, Ba, which is an element in group Ha of the periodic table, Cu, which is an element in group 1b of the periodic table, and oxygen, the above Y and By changing the ratio of Ba and the like, an insulating layer, a semiconductor layer, a superconducting layer, etc. can be formed. More specifically, a composition consisting of (YBa)CaO2 in which X is 0.8 to 0.9 has excellent properties as a semiconductor; A value such as 0.4 has excellent properties as a superconductor.
上記の光トリガサイリスクであれば、超電導電極層（４
）、（５）にバイアス電圧をかけた状態で光を照射する
ことによって、超電導電極層（４）、（５）から滲み出
した準粒子を励起して空乏領域（６）に電流を流し、高
速スイッチングを行うことができる。この動作中、各層
（２）〜（５）で発生した熱は、半導体基板（１）を通
って効率よく外部に放出される。In the case of the above photo-triggered radiation risk, the superconducting electrode layer (4
), (5) are irradiated with light while a bias voltage is applied to excite the quasiparticles exuding from the superconducting electrode layers (4), (5) and cause a current to flow in the depletion region (6). Can perform high-speed switching. During this operation, the heat generated in each layer (2) to (5) is efficiently released to the outside through the semiconductor substrate (1).
各層（１）〜（５）は、組成の相違はあっても、同種の
構成元素からなるセラミックス酸化物であるため、接合
面における整合性は保たれ、各層（１）〜（５）に不整
合を原因とする歪や欠陥が発生することは少ない。した
がって、各層（１）〜（５）において良好な特性を得る
ことができ、超電導素子としても特性のよいものを得る
ことができる。Although each layer (1) to (5) has a difference in composition, since it is a ceramic oxide made of the same kind of constituent elements, consistency at the bonding surface is maintained, and there is no difference in each layer (1) to (5). Distortion and defects caused by alignment are less likely to occur. Therefore, good characteristics can be obtained in each layer (1) to (5), and a superconducting element with good characteristics can also be obtained.
なお、この発明は上記の実施例に限定されるものではな
く、例えばサイリスタとして、光で動作するタイプでな
く、ゲート電極を設けて空乏層（６）の領域に電圧を印
加するタイプを実施してもよい。It should be noted that the present invention is not limited to the above-mentioned embodiments, and for example, a thyristor may be implemented not of a type that operates by light but of a type in which a gate electrode is provided and a voltage is applied to the region of the depletion layer (6). It's okay.
その他、超電導素子を太陽電池、高速スイッチング素子
、温度、磁界、光、電波等の物理的パラメータを検出す
る各種センサ等種々の分野へ応用することもできる。In addition, superconducting elements can be applied to various fields such as solar cells, high-speed switching elements, and various sensors that detect physical parameters such as temperature, magnetic fields, light, and radio waves.
〈発明の効果〉
以上のように、この発明の超電導素子によれば、基板お
よび素子本体は、組成は異なっても同種の構成元素から
なるセラミックスあるため、接合面での整合性を容易に
とることができる、したかって、超電導素子として良好
な特性を得ることができ、ひいては信頼性、歩留まりの
向上を図ることができるという特有の効果を奏する。<Effects of the Invention> As described above, according to the superconducting element of the present invention, since the substrate and the element body are made of ceramics made of the same kind of constituent elements even though their compositions are different, consistency at the bonding surface can be easily achieved. Therefore, it is possible to obtain good characteristics as a superconducting element, and as a result, it has the unique effect of being able to improve reliability and yield.
図は超電導素子の一実施例を示す断面図。 The figure is a sectional view showing one embodiment of a superconducting element.
Claims (1)
、IIａ族元素およびIIIａ族元素から選ばれた少なくと
も１種の元素、Ｉｂ族元素、IIｂ族元素およびIIIｂ族
元素から選ばれた少なくとも１種の元素、並びに酸素、
窒素、フッ素、炭素および硫黄から選ばれた少なくとも
１種の元素を含むセラミックスからなり、このうち素子
本体を構成するセラミックスの少なくとも一部が超電導
体であることを特徴とする超電導素子。 ２、上記セラミックスが、一般式、（Ａ＿１＿−＿ｘＢ
＿ｘ）＿２ＣＤ＿４ （式中Ａは、周期律表IIIａ族より選択された少なくと
も１種の元素を示し、Ｂは、周期律表Ｉａ族、IIａ族及
びIIIａ族より選択された少なくとも１種の元素を示し
、Ｃは、周期律表Ｉｂ族、IIｂ族およびIIIｂ族より選
択された少なくとも１種の元素を示し、Ｄは、周期律表
Ｖｂ族、VIｂ族及びVIIｂ族より選択された少なくとも
１種の元素を示し、係数ｘは、０＜ｘ＜１の関係式を充
足する） で表されるペロブスカイト型である上記特許請求の範囲
第１項記載の超電導素子。[Scope of Claims] 1. Both the substrate and the element body contain at least one element selected from group Ia, group IIa, and group IIIa elements of the periodic table, group Ib, group IIb, and group IIIb. at least one element selected from, and oxygen,
A superconducting element comprising a ceramic containing at least one element selected from nitrogen, fluorine, carbon and sulfur, wherein at least a part of the ceramic constituting the element body is a superconductor. 2. The above ceramic has the general formula, (A_1_−_xB
_x)_2CD_4 (In the formula, A represents at least one element selected from Group IIIa of the periodic table, and B represents at least one element selected from Groups Ia, IIa, and IIIa of the periodic table. , C represents at least one element selected from Groups Ib, IIb and IIIb of the Periodic Table, and D represents at least one element selected from Groups Vb, VIb and VIIb of the Periodic Table. The superconducting element according to claim 1, which is a perovskite type superconducting element represented by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62080419A JPS63245973A (en) | 1987-03-31 | 1987-03-31 | Superconducting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62080419A JPS63245973A (en) | 1987-03-31 | 1987-03-31 | Superconducting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63245973A true JPS63245973A (en) | 1988-10-13 |
Family
ID=13717772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62080419A Pending JPS63245973A (en) | 1987-03-31 | 1987-03-31 | Superconducting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63245973A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63301426A (en) * | 1987-06-01 | 1988-12-08 | Semiconductor Energy Lab Co Ltd | Manufacture of superconductive material |
| JPS6486575A (en) * | 1987-06-17 | 1989-03-31 | Hitachi Ltd | Superconducting device |
| US4990487A (en) * | 1988-03-11 | 1991-02-05 | The University Of Tokyo | Superconductive optoelectronic devices |
| US5221660A (en) * | 1987-12-25 | 1993-06-22 | Sumitomo Electric Industries, Ltd. | Semiconductor substrate having a superconducting thin film |
-
1987
- 1987-03-31 JP JP62080419A patent/JPS63245973A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63301426A (en) * | 1987-06-01 | 1988-12-08 | Semiconductor Energy Lab Co Ltd | Manufacture of superconductive material |
| JPS6486575A (en) * | 1987-06-17 | 1989-03-31 | Hitachi Ltd | Superconducting device |
| US5221660A (en) * | 1987-12-25 | 1993-06-22 | Sumitomo Electric Industries, Ltd. | Semiconductor substrate having a superconducting thin film |
| US4990487A (en) * | 1988-03-11 | 1991-02-05 | The University Of Tokyo | Superconductive optoelectronic devices |
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