TW492071B - Method and device to remove the thick dry film photoresist in metal bump process - Google Patents

Abstract

The present invention provides a method to remove the thick dry film photoresist in metal bump process, which is applied in a semiconductor wafer. Its surface has a bonding pad, a passivation layer covering all of the semiconductor devices on the surface of the semiconductor wafer, and an opening to expose the bonding pad. The method comprises the following steps: forming a barrier layer and a metal layer on the surface of the semiconductor wafer; forming a thick dry film photoresist layer having metal bump pattern on the metal layer; forming a metal bump on the metal bump pattern; agitate the semiconductor wafer in the cleaning trough to peel off the thick dry film photoresist. The present invention also proposes a device to remove the thick dry film photoresist in the metal bump process, which comprises: a cleaning trough containing the cleaning liquid to clean up the thick dry film photoresist on the semiconductor wafer; a wafer carrying device to carry the semiconductor wafer; a vibration transmission device linked to the wafer carrying device and transmit the vibration to the wafer carrying device; and a vibration generator to agitate the vibration transmission device.

Description

The present invention is particularly relevant and it will cause the body component to be etched and etched to the bottom of the protective layer (bonding after half a while. This technology is used. For a metal bump process, J is used for the metal bump process The device used in the method of removing the thick dry film photoresistor. In the conductor manufacturing process, it takes a long time to borrow 4.. .Field + conductor components have been prepared: the surface of the conductor wafer is covered with a protective layer to prevent semiconducting ^ The impact of wood damage, scratches, and moisture. In the following, an opening will be formed by using micro and private definitions on the compliance layer to expose the surface of the metal layer provided on the security layer as a connection pad ', pad) In order to make the semiconductor elements electrically connected to the external substrate before electrical connection, most of them use flip-chip (fHp chij). In general, flip-chip technology generally refers to a wafer that is flipped and then passes through a metal conductor to the outside through a metal conductor. The substrates are bonded. Generally speaking, the metal body includes metal bumps, tape-automated bonding, anisotropic conductive adhesives, and polymer bumps. ymer bump), stud bump, etc. Among them, metal bump technology is the most mature, and it is also widely used in mass-produced products. There are many methods for forming metal bumps. Common ones include evaporation and sputtering. Plating, electricity mining, printing, wire molding, spray molding, etc., and the materials of the metal bumps are based on different needs. There are frosts such as Nanwen tin boat, low temperature tin tin, gold, copper, copper, etc. Ball, in which gold (Au) bumps are most commonly used in LCD products, communication products. U-port < structure please refer to Figures 1A to 1E, which shows the production of the conventional bump 26 is too legal.

0503-6140TW.ptd V. Description of the invention (2) Schematic diagram. As shown in FIG. 1A, a semiconductor wafer 10 is provided, which includes a completed semiconductor element (not shown). A connection 12 is provided on the surface of the semiconductor wafer 10, and a protective layer 14 covers it. The semiconductor wafer table, all semiconductor elements, and a first opening 6 are defined on the protective layer 14 so that the surface of the connection pad 12 is exposed. Among them, the material of the connection 塾 12 is made of metal aluminum, and the material of the protective layer 丨 4 may be made of nitride shatter (ShN4) or phosphor-silicon glass (PSG). Secondly, as shown in FIG. 1β, a barrier layer 18 and a metal layer 20 are sequentially formed on the surface of the semiconductor wafer 10, wherein the barrier layer 18 is composed of TiW to block the diffusion of metal, and the metal layer 20 It is conducive to the adhesion of subsequent bumps. Next, as shown in FIG. 1C, a dry thick film photoresist layer 22 is formed on the surface of the semiconductor wafer 10, which includes a second opening 24 for defining a bump pattern. Thereafter, a metal bump is plated in the second opening 24. The metal bump 26 includes a copper layer 28, a nickel layer 30, and a solder layer 32, and is used as a bump for electrically connecting the bridge. When the thickness of the plated metal bump 26 exceeds the dry thick film photoresist layer, a mushroom-shaped metal bump will be formed. As shown in FIG. 1D, the photoresist will be increased during the subsequent photoresist stripping process. The difficulty of removal makes it difficult to improve productivity and yield. y Then, as shown in FIG. 1E, after the dry thick film photoresist layer 22 is stripped off, the metal layer 20 and the barrier layer 丨 outside the bump 26 area are sequentially etched away ^ until the protection is exposed On the surface of the layer 14, the metal bump 26 is reheated to move it to form a spherical metal bump. In terms of international process experience, if the photoresist is removed, it can be used in a cleaning tank to stand still. Although it can be cleaned, it is time-consuming and unsuitable for the factory. 0503-6140Bf.Ptd V. Description of the invention (3) 1 ~ = 畺 production . If ultrasonic cleaning and deionized water are added to the cleaning tank, the cleaning effect is not good, and the metal bumps are easily damaged. Therefore, in order to solve the problem of dry and thick film photoresist in the process of photoresist stripping, good = yield and yield are difficult to improve, so it is urgent to address the above: In view of this, the object of the present invention is to provide Modification of film photoresistance method and device & it expands the device in Qing ^ 31 to increase the output of the thick dry film photoresistance stripping effect (r0 / Small Gamma), so that production capacity and yield It is possible to increase the thickness of the crystal and remove the thickness. This method is used in the metal bump process * 4; and the surface of the semiconductor wafer includes the following steps. Here the semiconductor = t this connection. This method and-metal layer; 2 sequence formation-barrier layer-thick dry film photoresist layer; here is the metal bump diagram; belongs to: pattern: and in-cleaning tank "this semiconductor wafer device 'is used in i-generator :: removed in the process Thick dry film photoresist Dry film photoresist, including: removing the thick dry film on a semiconductor wafer in a cleaning 7 < the thick dry film on the conductor wafer; Wafer; a vibration transmission F: crystal, a carrier device, which is used to hold the vibration transmitted to this wafer to complete the limbs' The wafer carrying device is completed and placed; and a vibration generator is used to vibrate 0503-6140TW.ptd 492071. V. Description of the invention (4) The vibration transmission device is moved. Only the following specific examples-preferred embodiments, and In conjunction with the attached drawings = In order to make the above-mentioned objects and features of the present invention, nr < r animal and a private eight & '.. $ 慢 黑 占 月 b is more obvious and easy to make detailed explanations as follows [schematic explanation] Figures 1A to 1E show the process cross-section of a conventional metal bump. Figures 2A to 2F show a cross-sectional view of the process of the present invention in gold: the process of removing a thick dry film photoresist. Section 3 of the device in the block process. The figure shows the ifij diagram of removing the thick dry film photoresist according to the embodiment of the present invention. [Explanation of symbols] 10, 60 to semiconductor wafer; 12, 62 to connection pad; 14; 16, 24, to opening; 18, 68 to barrier 2, 4 :: protective coating, 22, 72 ~ dry thick film photoresist layer; 26, 76 ~ metal convex metal layer; 30, 80 ~ nickel layer; 32, 82 ~ solder layer; 100 ~ Washing 28, 78 ~ vibration device; 104 ~ wafer bearing device ^ tank; 102 'vibration generator. Xiadong Pass-through installation; 108, Example-month reference 2A to 2F 'It shows a cross-sectional view of the process of the present invention for removing a thick dry film photoresist. In the bump manufacturing process, firstly, referring to FIG. 2A, a semi-conductor is provided. The semiconductor device has been completed (n-channel, Ba060, It contains π limbs, Hexianbu), one connected to the surface of the semiconductor wafer 60, and one continued to be β ^; the fake product, the private girl's tunnel, and the security compliance layer 64 cover the surface of the semiconductor wafer 60. All abundant conductors ... and a first opening 66 are defined on page 8. 503-6140TlV.ptd

1 on the protective layer 64 so that the surface of the connection pad 62 is exposed. 1 The material of 塾 62 is made of metal & and the protective layer 64; it can be made of silicon nitride (Si ^) or phosphosilicate glass (PSG), which is used to protect the components from being polluted. &Amp; Ding ^, Secondly, please refer to FIG. 2B. On the surface of the semiconductor wafer 60, f-barrier layer 68 and -metal layer 70 are sequentially formed, wherein the barrier layer 68 can be blocked by Qin Suo group. The diffusion of metal, and the metal layer 70 may be composed of copper, which is helpful for the adhesion of the subsequent bumps. Next, referring to FIG. 2C, a metal layer 70 is formed with

One of the metal bump patterns is a thick dry film photoresist layer 72. The thick dry film photoresist layer 72 is preferably made of a light-transmitting solid material and is removable, and more preferably is made of TQK p-5Q120 negative photoresist. Thereafter, a metal bump 76 is formed in the metal bump pattern. The metal bump 76 may include a copper layer 78, a nickel layer 80, and a solder layer 82, which are used as bumps for electrically connecting the bridge. When the thickness of the plated metal bump 76 exceeds the dry-thick film photoresist layer 72, a mushroom-shaped metal bump will be formed. As shown in FIG. 2D, the photoresist removal will be added in the subsequent photoresist stripping process. Difficulties. Next, the characteristic step of the present invention will be performed to install a vibration device in the cleaning tank to enhance the stripping effect of the thick dry film photoresist.

Then, referring to FIG. 2E, the semiconductor wafer 60 is placed in a cleaning bath 400 and a shaker device 2 is used to perform a photoresist stripping process on the thick dry film photoresist 72. The cleaning tank 100 may be a jSr THB_S2 chemical tank, which contains tetramethylammonium hydroxide < 3%, Dimethyisulphoxide (DMS0) 96-99% and water <

0503-6140TW.ptd Page 9 492071 V. Description of the invention (6) 3%. The vibration device 102 includes a wafer carrying body wafer 60 and a vibration transmitting device 106. The M-containing semiconducting device transmits vibration to the wafer carrying device 104, and the device 104 is used to vibrate the vibration. Passing device 106. In the subsequent process of the life device 108 ', the metal bumps 76 can be heated according to the conventional method to reflow to form a metal surface, and the bumps are produced. The result is as shown in FIG. 2F. Book 3: The device for removing the thick dry film photoresist in the process of gas bumps, as shown in the figure ... cleaning tank 100, used to hold the thick dry film photoresist on the cleaning day 51, cleaning samples Cattle guide trough, which contains tetramethyl nitrogen ^ = 100, which can be a quatramethylammomiumhydroxide <3%, Dimethyisulphoxide (DMSO) 96-99% A 7k &lt; Sun ^ ^ 1 〇 4 ^, J 9〇 &lt; 3 ^ ® _ 'to the wafer carrier special delivery device 104. A vibration Yan Feng and the vibration is transmitted to the wafer carrier. The vibration generates ¥ 1 ^: to shake the vibration transmission device 106. ίίίϊ = The range of tremor speed for the best results. It can be broken when the vibration speed is 100 rpm. It is easy to cause the wafer when the time is half to 130; the vibration of Ba 囡 is lower than the ultrasonic vibration frequency. It is convenient for the above embodiments of the present invention to clean a semiconductor wafer more often. The purpose of trt is to use for batch-type mass production, and the conductor can be returned daily at the same time, which is suitable for mass production in factories. 0503-6l40TW.Ptd Page 10 492071 V. Description of the Invention (7) Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art will not depart from the present invention. Within the spirit and scope, changes and retouching can be made. Therefore, the scope of protection of the present invention shall be determined by the scope of the appended patent application.

0503-6140TW.ptd Page 11

Claims (1)

Sixth, the scope of patent application 1 · = A method for removing thick dry film photoresist in the process of metal bumps. The cost of the "semiconductor wafer" includes-connecting pads,-protective layers, covering the semiconductor crystal. All semiconductor elements with a round surface and one opening are exposed to expose the connection pad. The method includes the following steps: a layer; a barrier layer and a metal resist layer are sequentially formed on the surface of the semiconductor wafer and a metal resist layer is formed on the metal layer A thick dry film with a metal bump pattern forms a metal bump in the metal bump pattern; and shakes the semiconductor wafer in a cleaning bath to strip the thick dry film photoresist. Wherein the connection The barrier layer ^ 2 • The method described in item 1 of the patent application is composed of aluminum. 3. The method described in item 1 of the patent application is composed of titanium. Wherein the metal layer 4 • as applied The method described in item 1 of the patent scope is made of copper. 5 · The method described in item 1 of the scope of patent application, wherein the cleaning tank further comprises a JSR THB-S2 chemical tank, the JSR THB-S2 chemical tank contains Four Preyl ammonium hydroxide &lt; 3 ° / ◦, dimethyl methylene maple 96-99% and water &lt; 6. The method as described in item 1 of the patent claim, wherein the semiconductor wafer vibration is borrowed A vibration device is used to perform the vibration, and the vibration speed is 30-1 30 rpm. The rotation speed of the clothing is the same as that described in item 1 of the scope of patent application, where 0503-6140TW.ptd Page 12 The vibration of the bulk wafer is lower than the ultrasonic vibration frequency. Tian Jian 8 people bent on a device for removing thick dry film photoresist in the process of metal bumps, which includes · f removing thick dry film photoresist on a semiconductor wafer, an alpha washing tank is used to hold a cleaning solution for cleaning A thick dry film photoresist on the semiconductor wafer; a wafer carrying device for holding the semiconductor wafer; a vibration transmitting device connected to the wafer carrying device and transmitting vibration to the wafer carrying device; and a A vibration generator is used to shake the vibration transmission device. 9. The device according to item 8 in the scope of the patent application, wherein the cleaning tank includes a JSR THB-S2 chemical tank, and the jsR ΤΗΒ-S2 chemical tank contains tetramethylammonium hydroxide &lt; 3%, dimethylene Maple 96-9 9% and water <3. / 0. 10. The device according to item 8 of the scope of patent application, wherein the vibration speed of the vibration generator is 30-1 30 rpm. 0503-6140TW.ptd Page 13