A7 B7 4^0604 五、發明説明（ί 發明背景： 發明領域 (請先閱讀背面之注意事項再填寫本頁) 本發明是關於對一被處理之物件傳導溫度處理製程之 溫度處理系統之決定一組溫度軌線的方法，如膜沈澱製 程。更特別地，本發明是關於溫度處理系統之決定一組溫 度軌線的方法以，致使溫度處理系統正確地形成一膜。 相關技藝的說明 溫度處理晶圓以形成特定的膜於其上之溫度處理步驟 是其中之一製造半導體裝置或類似之基本製程。溫度處理 步驟由溫度處理系統在範圍大約750至900°C之相當高溫的 高溫環境實行。化學蒸發沈澱製程（CVD製程）與氧化/擴 散製程是這樣的溫度處理製程。 經濟部智慧財產局員工消費合作社印製 通常，溫度處理系統設有以垂直層（似階層）支持多 個晶圓之晶圓支持裝置（稱爲晶圓船wafer boat )，包含晶 圓支持裝置於其內之管狀反應管，多個便於環繞反應管的 側壁形成且以軸距建構之加熱器，運送反應氣體至反應管 之氣體供應線，以及排氣線，透過它氣體自反應管排出。 電源以預定的速率被供應至加熱器以在適合膜成型之 溫度維護晶圓。在膜成型製程期間測量晶圓的溫度實際上 是不可能的。所以，經常，除了晶圓外之.零件之經測量的 溫度被使用作控制製程溫度。 加熱器的個別輸出的控制對正確地達成溫度處理製程 是基本的，如沈澱一膜於晶圓上之製程。膜沈澱製程將被 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -4 - 490604 A7 B7 五、發明説明（$ 描述作這樣的溫度處理製程的範例。 (請先閱讀背面之注意事項再填寫本頁) 當晶圓的溫度甚至有點不同一組晶圓溫度時，於晶圓 上沈澱之膜的厚度與品質得自一組値。例如，在某一膜沈 澱製程中，自一組晶圓溫度之晶圓的溫度的rc的‘溫差自一 組厚度造成膜的厚度的0.1 nm的厚度差。如果膜的厚度是 在數毫微米至數十毫微米的範圍，當該組晶圓的溫度是數 百攝氏度時，晶圓的溫度必需被控制.在數攝氏度的精確 度。 當反應氣體以定流自氣體供應側流向反應管的排氣側 時，反應管之反應氣體的濃度的分佈不是一致的。如果反 應管之不同區域的溫度以相同的方式被控制而反應管之反 應氣體的濃度的分佈不是一致的，分別具不同厚度之膜分 別地被沈澱於不同的晶圓上。所以，不同的組溫度被分別 地設爲多個在多個晶圓的建構的方向建構之加熱器，且多 個加熱器的個別溫度被個別地控制。 經濟部智慧財產局g(工消f合作钍印製 個別地對應於多個加熱器之反應管之區域在可允許的 厚度範圍中透過形成厚度的膜的校正的重複必需決定最佳 組溫度，以在反應管中沈澱具正確且一致厚度之膜於晶圓 最佳組溫度在反應管中可以由，例如，包括放置多個 測試晶圓的步驟之方法而決定，以一組溫度於晶圓上之沈 澱膜，由測量儀器的機構測量經沈澱的膜的厚度，自想要 的厚度在經測量的厚度的差別的基礎上調整對應多個加熱 器的輸出之反應管之一組溫度條件，且在經調整的一組溫 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） -5- f0604 A7 B7 五、發明説明（9 (請先閲讀背面之注意事項再填寫本頁) 度條件下沈澱膜於測試晶圓上。這些步驟被重覆直到自想 要的厚度之膜的經測量厚度的差別被減少在預定的程度 下。因此決定之一組溫度條件被使用作對應於多個加熱器 的輸出之反應管之一組溫度條件。 在一些例子中，當製造一半導體裝置時，不同類型的 膜由膜沈澱製程而沈澱於層中。在這樣的例子中，對應於 多個加熱器的輸出之反應管中之最佳的一組溫度條件被決 定作爲各膜沈澱製程。 假使，例如，第一膜被沈澱於晶圓上且接著第二膜被 沈澱於第一膜上。對應於多個加熱器的輸出之反應管中之 最佳的一組溫度條件由上述形成第一膜之第一膜沈澱製程 之方法而決定。接著，對應於多個形成第二膜之第二膜沈 澱製程之加熱器的輸出之反應管中之最佳的一組溫度條件 由使用在如上決定之最佳一組溫度條件下沈澱第一膜於晶 圓上之上述方法而決定。因此，最佳一組溫度條件個別被 決定作爲沈澱膜於晶圓上。 經濟部智慧財產局8工消費合作社印製 然而，在一些例子中，半導體裝置製造處理需要連續 地形成第一膜與第二膜。當連續地形成第一膜與第二膜 時，第一膜被沈澱於載至溫度處理系統之晶圓上，且接著 第二膜被沈澱於第一膜上不需在已經沈澱第一膜後自溫度 處理系統卸下晶圓。 當第一膜與第二膜因此被連續地形成時，僅形成第一 與第二膜於晶圓上之膜沈澱的結果上之資料可以由測量儀 器測量，且因此個別地決定第一與第二膜之最佳一組溫度 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -6- 1604 A7 B7 五、發明説明（j 條件之前述的方法不能被使用。 (請先閲讀背面之注意事項再填寫本頁) 有兩個不同測量第一與第二膜的沈澱的結果上之資料 的例子。在第一例中，如第一與第二膜是氮化膜之例子’ 不能個別地測量第一與第二膜個別的厚度且,僅可以測量第 一與第二膜個別的厚度的和。在第二例子中，如第一是氧 化膜且第二膜是氮化膜之例子，可以個別地測量第一與第 二膜個別的厚度。 在第一例子中，最佳一組溫度條件可以被決定作爲沈 澱第一或第二膜之膜沈澱製程。在此例中，可以管理第一 與第二膜個別的厚度的和，但不能個別地管理第一與第二 膜個別的厚度。此外，最佳一組溫度條件也許由適當地分 割膜沈澱的結果上之資料而決定作爲分別沈澱第一與第二 膜之膜沈澱製程。然而，實際上，不知分割（分配）是否 適當。因此，這樣的膜厚度管理不能達成個別膜之膜厚度 管理。 經濟部智慧財產局員工消费合作社印% 在第二例子中，形成第一與第二膜之膜形成處理之最 '佳一組溫度條件必需以適當的順序決定，如果在形成第一 與第二膜後沈澱第二膜之膜沈澱製程之最佳一組溫度被決 定，且接著沈澱第一膜之膜沈澱製程之最佳一組溫度條件 被決定，沈澱第一膜之膜沈澱製程之最佳一組溫度條件的 決定影嚮沈澱第二膜之處理之最佳一組溫度條件是可能 的。因此，沈澱第二膜之膜沈澱製程之最佳一組溫度條件 必要被再調整。在此例中，有效的最佳一組溫度條件的決 定是困難的。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 29*7公釐） " 4m〇4 A7 B7 五、發明説明（g 雖然膜沈澱製程已經說明作溫度處理系統的範例，前 述的問題一般留在由溫度處理系統實行之溫度處理製程 〇 (請先閲讀背面之注意事項再填寫本頁) 本發明已經以這樣的問題的觀點製作且因此本發明的 目的是提供決定實行溫度處理製程之溫度處理系統之一組 溫度條件的方法’如沈澱一儒於被處理之物件上之膜沈澱 製程’能夠分別決定於反應管中連續地實行多個溫度處理 製程之最佳一組溫度條件。 - 發明節要 經濟部智慧財產局Μ工消費合作社印製 發明是一種決定連續地傳導第一溫度處理製程與第二 溫度處理製程於被處理之物件之溫度處理系統之一組溫度 軌線的方法，該方法包含步驟：由使用臨時第一組溫度軌 線’傳導第一溫度處理製程至被處理之第一測試物件；測 量傳導至被處理之第一測試物件之第一溫度處理製程的結 果；於第一溫度處理製程的經測量結果的基礎上由校正臨 時第一組溫度軌線決定第一溫度處理製程之第一組溫度軌 線；由使甩臨時第二組溫度軌線，傳導第二溫度處理製程 至已經由使用經決定的第一組溫度軌線傳導第一溫度處理 製程之被處理之第二測試物件；測量傳導至被處理之第二 測試物件之第二溫度處理製程與第一溫度處理製程的結 果；以及於第一溫度處理製程與第二溫度處理製程的經測 量結果的基礎上由校正臨時第二組溫度軌線決定第二溫度 處理製程之第二組溫度軌線。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -8- 490604 A7 B7 五、發明説明（d (請先閲讀背面之注意事項再填寫本頁) 根據上述特性，臨時第二組溫度軌線在第一溫度處理 製程與第二溫度處理製程的經測量結果的基礎上被校正。 第一溫度處理製程之第一組溫度軌線已經在此時間點被校 正且，因此，第二溫度處理製程之第二組溫度軌線被最佳 化。 最好是第一組溫度軌線是固定的，且第二組溫度軌線 是固定的。 — 在此例中，同時由溫度處理製程的結果之溫度處理系 統處理之物件間之差異，如膜厚度之差異，可以被減少。 被處理之物件上形成之膜的平均厚度視製程溫度而定。 另外，第一組溫度軌線是可變的，且第二組溫度軌線 是可變的。 經濟部智慧財4局員工消费合作社印製 在該例中，除了同時由溫度處理製程的結果之溫度處 理系統處理之物件間之差異的減少之外，如膜厚度的差 異，溫度處理製程的結果之各物件的零件間之差異，如膜 的厚度，可以被減少。適當的溫度梯度可以由利用物件之 熱傳導的速率在溫度處理製程期間在由改變組溫度處理之 物件的某零件與周邊零件之間建立。因此，周邊零件與被 處理之物件的某零件間之膜沈澱條件之差異，如來源氣體 的濃度，可以被抵銷。 此外，最好是，溫度處理系統被分成多個能夠個別被 加熱之區域；第一組溫度軌線分別地被決定作爲溫度處理 系統的區域；區域之第一組溫度軌線彼此不同；第二組溫 度軌線分別地被決定作爲溫度處理系統的區域；區域之第 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -9- 490604 A7 B7 五、發明説明（$ 二組溫度軌線彼此不同。 (請先閲讀背面之注t事項再填寫本頁) 因此，該方法能夠有效地處理需要以被處理之類層物 件的建構的方向設定之不同的溫度處理條件之例子。 此外，最好是，第一溫度處理製程是由使用熱氧化之 閘氧化膜形成製程，且第二溫度處理製程是氮化閘氧化膜 之氮化製程。 另外，發明是決定連續傳導第一溫度處理製程，第二 溫度處理製程與第三溫度處理製程至一被處理之物件之溫 度處理系統之一組溫度軌線的方法，該方法包含步驟：由 使用臨時第一組溫度軌線，傳導第一溫度處理製程至被處 理之第一測試物件；測量傳導至被處理之第一測試物件之 第一溫度處理製程的結果；在第一溫度處理製程的經測量 結果的基礎上由校正臨時第一組溫度軌線決定第一溫度處 理製程之第一組溫度軌線；由使用臨時第二組溫度軌線， 經濟部智慧財產局員工消費合作社印製 傳導第二溫度處理製程至已經由使用經決定的第一組溫度 軌線傳導第一溫度處理製程之被處理之第二測試物件；測 量傳導至被處理之第二測試物件之第一溫度處理製程與第 二溫度處理製程的結果；在第一溫度處理製程與第二溫度-處理製程的經測量結果的基礎上由校正臨時第二組溫度軌 線決定第二溫度處理製程之第二組溫度軌線；由使用臨時 第三組溫度軌線，傳導第三溫度處理製程至已經由使用經 決定的第一組溫度軌線傳導第一溫度處理製程且至已經由 使用經決定的第二組溫度軌線傳導第二溫度處理製程之被 處理之第三測試物件；測量傳導至被處理之第三測試物件 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇Χ：297公釐） -10- 490604 A7 ____B7_ 五、發明説明（3 (請先閲讀背面之注意事項再填寫本頁) 之第三溫度處理製程，第二溫度處理製程與第一溫度處理 製程的結果；以及在第一溫度處理製程，第二溫度處理製 程與第三溫度處理製程的經測量結果的基礎上由校正臨時 第三組溫度軌線決定第三溫度處理製程之第三組溫度軌 線。 在該例中，根據第一溫度處理製程的結果，第一溫度 處理製程之反應管中之一組溫度條件可以被最佳化，且由 使用一組溫度條件根據第一與第二溫度處理製程的結果， 第二溫度處理製程之反應管中之一組溫度條件可以被最佳 化。接著，由使用一組溫度條件根據第一，第二與第三溫 度處理製程的結果，第三溫度處理製程之反應管中之一組 溫度條件可以被最佳化。因此，可以管理第一，第二與第 三溫度處理製程之一組溫度條件。四或更多的溫度處理製 程之一組溫度條件可以以類似的方式最佳化。 最好是，第一組溫度軌線是固定的，第二組溫度軌線 是固定的，且第三組溫度軌線是固定的。 經濟部智慧財產局員工消費合作社印製 另外，第一組溫度軌線是可變的，第二組溫度軌線是 可變的，且第三組溫度軌線是可變的。 此外，最好是，溫度處理系統被分成多個能夠個別被 加熱之區域；第一組溫度軌線分別地被決定作爲溫度處理 系統的區域；區域之第一組溫度軌線彼此不同；第二組溫 度軌線分別地被決定作爲溫度處理系統的區域；區域之第 二組溫度軌線彼此不同；第三組溫度軌線分別地被決定作 爲溫度處理系統的區域；區域之第三組溫度軌線彼此不 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -11 - 490604 A7 B7 五、發明説明（$ 同。 (請先閱讀背面之注意事項再填寫本頁) 此外，發明是決定連續傳導第一溫度處理製程與第二 溫度處理製程至一被處理之物件之溫度處理系統之一組溫 度軌線的方法，該方法包含步驟：由使用臨時第一組溫度 軌線，傳導第一溫度處理製程至被處理之第一測試物件； 測量傳導至被處理之第一測試物件之第一溫度處理製程的 結果；在第一溫度處理製程的經測量結果的基礎上由校正 臨時第一組溫度軌線決定第一溫度處理製程之第一組溫度 軌線；由使用臨時第二組溫度軌線，傳導第二溫度處理製 程至已經由使用經決定的第一組溫度軌線傳導第一溫度處 理製程之被處理之第二測試物件；測量傳導至被處理之第 二測試物件之第二溫度處理製程的結果；以及在第二溫度 處理製程的經測量結果的基礎上由校正臨時第二組溫度軌 線決定第二溫度處理製程之第二組溫度軌線。 經濟部智慧財產局員工消費合作社印製 在該例中，關於各連續溫度處理製程的結果之反應管 中之一組溫度可以被最佳化。在該例中，最佳一組溫度被 決定作爲第一溫度處理製程，即，前面的溫度處理製程， 接著最佳一組組溫度被>決定作爲第二溫度處理製程，即， 後面的溫度處理製程。因此，第一溫度處理製程之最佳一 組溫度的再調整是不需要的，且因此反應管的內部之最佳 一組溫度可以被有效地決定。 此外，發明是一種連續地傳導第一溫度處理製程與第 二溫度處理製程至被處理之物件的方法，該方法包含步 驟：由使用臨時第一組溫度軌線，傳導第一溫度處理製程 I紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐) -12- 490604 Λ7 B7 五、發明説明（如 (請先閱讀背面之注意事項再填寫本頁) 至被處理之第一測試物件；測量傳導至被處理之第一測試 物件之第一溫度處理製程的結果；於第一溫度處理製程的 經測量結果的基礎上由校正臨時第一組溫度軌線決定第一 溫度處理製程之第一組溫度軌線；由使用臨時第二組溫度 軌線，傳導第二溫度處理製程至已經由使用經決定的第一 組溫度軌線傳導第一溫度處理製程之被處理之第二測試物 件；測量傳導至被處理之第二測試物件之第二溫度處理製 程與第一溫度處理製程的結果；於第一溫度處理製程與第 二溫度處理製程的經測量結果的基礎上由校正臨時第二組 溫度軌線決定第二溫度處理製程之第二組溫度軌線；由使 用經決定的第一組溫度軌線，傳導第一溫度處理製程至被 處理之物件；以及由使用經決定的第二組溫度軌線，傳導 第二溫度處理製程至已經傳導第一溫度處理製程之被處理 之物件。 經濟部智慧財4局S工消費合作社印製 另外，發明是連續地傳導第一溫度處理製程，第二溫 度處理製程與第三溫度處理製程至一被處理之物件的方 法，該方法包含步驟：由使用臨時第一組溫度軌線，傳導 第一溫度處理製程至被處理之第一測試物件；測量傳導至 被處理之第一測試物件之第一溫度處理製程的結果；在第 一溫度處理製程的經測量結果的基礎上由校正臨時第一組 溫度軌線決疋桌一'溫度處理製程之第一組溫度軌線；由使 用臨時第二組溫度軌線，傳導第二溫度處理製程至已經由 使用經決定的第一組溫度軌線傳導第一溫度處理製程之被 處理之第二測試物件；測量傳導至被處理之第二測試物件 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -13- 490604 A7 B7___ 五、發明説明（& (請先閲讀背面之注意事項再填寫本頁) 之第一溫度處理製程與第二溫度處理製程的結果；在第一 溫度處理製程與第二溫度處理製程的經測量結果的基礎上 由校正臨時第二組溫度軌線決定第二溫度處理製程之第二 組溫度軌線；由使用臨時第三組溫度軌線，傳導第三溫度 處理製程至已經由使用經決定的第一組溫度軌線傳導第一 溫度處理製程且至已經由使用經決定的第二組溫度軌線傳 導第二溫度處理製程之被處理之第三測試物件；測量傳導 至被處理之第三測試物件之第三溫度處理製程，第二溫度 處理製程與第一溫度處理製程的結果；在第一溫度處理製 程，第二溫度處理製程與第三溫度處理製程的經測量結果 的基礎上由校正臨時第三組溫度軌線決定第三溫度處理製 程之第三組溫度軌線；由使用經決定的第一組溫度軌線， 傳導第一溫度處理製程至被處理之物件；由使用經決定的 第二組溫度軌線，傳導第二溫度處理製程至已經傳導第一 溫度處理製程之被處理之物件以及由使用經決定的第三組 溫度軌線，傳導第三溫度處理製程至已經傳導第一溫度處 理製程與第二溫度處理製程之被處理之物件。 經濟部智慧財產局員工消費合作社印製 另外，發明是一種連續地傳導第一溫度處理製程與第 二溫度處理製程至被處理之物件的方法，該方法包含步 驟：由使用臨時第一組溫度軌線，傳導第一溫度處理製程 至被處理之第一測試物件；測量傳導至被處理之第一測試 物件之第一溫度處理製程的結果；於第一溫度處理製程的 經測量結果的基礎上由校正臨時第一組溫度軌線決定第一 溫度處理製程之第一組溫度軌線；由使用臨時第二組溫度 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） -14- 490604 A7 B7 五、發明説明（ (請先閲讀背面之注意事項再填寫本頁) 軌線，傳導第二溫度處理製程至已經由使用經決定的第一 組溫度軌線傳導第一溫度處理製程之被處理之第二測試物 件；測量傳導至被處理之第二測試物件之第二溫度處理製 程的結果；於第二溫度處理製程的經測量結果的基礎上由 校王臨時第二組溫度軌線決定第二溫度處理製程之第二組 溫度軌線；由使用經決定的第一組溫度軌線，傳導第一溫 度處理製程至被處理之物件；以及由使用經決定的第二組 溫度軌線，傳導第二溫度處理製程至已經傳導第一溫度處 理製程之被處理之物件。 圖形的簡要說明 圖1 A與1 B是助於解釋本發明的較佳實施例的槪圖； 圖2是決定對應於多個連續地形成兩膜之加熱器的輸 出之反應管中之最佳一組溫度之最佳一組溫度決定程序的 流程圖； 圖3是圖2所示之步驟121的流程圖； 圖4是圖2所不之步驟1 2 2的流程圖； 經濟部智慧財產局a(工消资合作社印製 圖5A至5C是助於解釋決定沈澱第一膜之最佳第一組 溫度之最佳第一組溫度決定程序的晶圓溫度控制圖； 圖6A與6B是助於解釋決定沈澱第二膜之最佳第二組 溫度之最佳第二組溫度決定程序的晶圓溫度控制圖； 圖7A至7C是助於解釋決定沈澱第一膜之最佳第一動 態組溫度之最佳第一動態組溫度決定程序的晶圓溫度控制 圖； 本紙張尺度適用中國國家標準·（ CNS ) A4規格（210X297公釐) -15- 490604 A7 B7 五、發明説明（知 圖8A與8B是助於解釋決定沈澱第二膜之最佳第二動 態組溫度之最佳第二動態組溫度決定程序的晶圓溫度控制 圖； 圖9 A至9C是助於解釋以一致的厚度減少形成一膜於 晶圓上之溫度的效果的圖； 圖10A至10C是支持在晶圓船上之晶圓之膜厚度散佈 的圖； 圖11 圖2至4所展示的，決定對應於多 個連續地形成兩1¾¾¾熱器的輸出之反應管中之最佳一組 溫度之最佳一組溫度決定程序的流程圖； 圖1 2是圖11所示之步驟2 2 1的流程圖； 圖1 3是圖11所示之步驟2 2 2的流程圖； 圖14是由圖1A所示之溫度處理系統連續地形成第一 與第二膜之程序的流程圖；以及 圖1 5是顯示本發明的實施例中之閘氧化膜沈澱製程 的元件與相對範例之閘氧化膜沈澱製程的元件之表。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產苟8工消費合作社印製 元件對照表 1.1 反應管 37 條件評估單元 38 控制單元 39 離線最佳化單元 16 歧管 17 基面 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -16- 490604 A7 B7 五、發明説明（心 經濟部智慧財產局員工消費合作社印焚 12 內管 13 晶圓船 15 熱絕緣柱 18 蓋子 14 晶圓 19 船升降機 22 環狀加熱器 23 環狀加熱器 24 環狀加熱器 25 環狀加熱器 26 環狀加熱器 20 氣體供應管路 21 排出管路 27 外熱電偶 28 外熱電偶 29 外熱電偶 30 外熱電偶 31 外熱電偶 32 內熱電偶 33 內熱電偶 34 內熱電偶 35 內熱電偶 36 內熱電偶 ---;---.---裝------訂------ (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -17- 490604 A7 B7 五、發明説明（^ 較佳實施例的說明 本發明的較佳實施例將關於附圖而說明。 圖1 A與1 B是助於解釋本發明的較佳實施例的圖。如 圖1 A所示，此實施例是一溫度處理系統包括反應管11，與 反應管11有關之周邊裝置，條件評估單元37，控制單元 38，以及離線最佳化單元39。反應管11與它的周邊裝置以 截面顯示，且條件評估單元37，控制單元38與最佳化單元 3 9以方塊圖顯示。 反應管1 1有關閉的上末端。反應管11的下末端被密 封地支持在基·面17的下表面與歧管16的上末端間。內管 12有開口的上末端，與支持在自歧管16的內表面突出之支 架之下末端。 支撐多個晶圓14之晶圓船13，即，被處理之物件， 例如’ 一百五十晶圓’以水平狀態在垂直間隔被置於反應 管11中。晶圓船1 3經由熱絕緣柱1 5被支撐在蓋子1 8上。 蓋子18被裝在運送晶圓船13進出反應管11之船升降機 19。蓋子18被舉至它的上限位置以關閉歧管16的下開口 末端’即，組成反應管1 1與歧管1 6之處理容器的下開口 末端。 環狀加熱器2 2至2 6包括，例如，利於環繞反應管11 而配置之電阻加熱元件。加熱器22至26軸向地堆疊， 即，以晶圓14的建構的方向堆疊。加熱器22至26個別的 溫度產生率分別由控制單元38所控制。 氣體供應管路20被展延至歧管16以供應氣體進入內 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消费合作社印¾ -18- 經濟部智慧財產局g(工消費合作社印製 490604 A7 B7___ 五、發明説明（凫 管1 2。排出管路2 1係連接至歧管1 6以自內管1 2與反應管 11間之環狀空間排出氣體。通常，多個氣體供應管路係連 接至歧管16以供應多種氣體進入內管12。然而，僅單一氣 體供應管路20被簡化地顯示。排出管路2 1設有壓力調節 器，未顯示，以調節反應管11之壓力。 外熱電偶27至31係分別附於加熱器22至26的內側 表面以測量附有外熱電偶27至3 1之加熱器22至26的零件 的溫度。內熱電偶32至36在對應於外電偶27至31的位置 係分別附於內管12的內側表面以測量附有熱電偶32至36 之內管1 2的零件的溫度。 代表由外熱電偶27至31與內熱電偶32至36測量之 溫度之訊號被送至條件評估單元37。控制加熱器22至26 之控制訊號也透過控制單元38被送至條件評估單元37。控 制評估單元37自經測量的溫度與控制訊號評估由反應管1 1 之溫度處理製程正在處理之晶圓14的條件（溫度）。此評 估是需要的，因爲直接地測量晶圓1 4的溫度同時溫度處理 製程被傳導至晶圓14是非常困難的。晶圓14的溫度是直 接關於膜的沈澱於晶圓14上之參數，且因此晶圓1 4的溫 度的控制基本上是必需的。 一預定的模式被使用作評估自控制加熱器27至3 1之 控制訊號之晶圓1 4的溫度及由外熱電偶27至3 1與內熱電 偶32至26測量之溫度。該模式被儲存於條件評估單元 37。因此，條件評估單元37是適於評估自控制加熱器27 至31之控制訊號之晶圓14的溫度及由外熱電偶27至3 1與 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） " ~ ~ -19- ---J-------裝------訂------ (請先閱讀背面之注意事項再填寫本頁) 490604 A7 B7A7 B7 4 ^ 0604 V. Description of the invention (Background of the invention: Field of invention (please read the notes on the back before filling out this page) The present invention is a decision on a temperature processing system for the conductive temperature processing process of a processed object. A method for forming a temperature trajectory, such as a film precipitation process. More particularly, the present invention relates to a method for determining a set of temperature trajectories for a temperature processing system, so that the temperature processing system can form a film correctly. Description of related techniques The temperature processing steps on which a wafer is formed to form a specific film is one of the basic processes for manufacturing semiconductor devices or the like. The temperature processing steps are performed by a temperature processing system in a relatively high temperature environment ranging from about 750 to 900 ° C. The chemical evaporation precipitation process (CVD process) and the oxidation / diffusion process are such temperature processing processes. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Generally, the temperature processing system is provided with vertical layers (like layers) to support multiple wafers. Wafer support device (referred to as wafer boat), which includes a tubular reactor in which the wafer support device is located. Tube, a plurality of heaters which are conveniently formed around the side wall of the reaction tube and constructed with a wheelbase, a gas supply line that transports the reaction gas to the reaction tube, and an exhaust line through which the gas is discharged from the reaction tube. The power is discharged at a predetermined rate. Supply to the heater to maintain the wafer at a temperature suitable for film forming. It is practically impossible to measure the temperature of the wafer during the film forming process. So often, apart from the wafer, the measured temperature of the part is used It is used to control the process temperature. The control of the individual output of the heater is essential to correctly achieve the temperature processing process, such as the process of depositing a film on a wafer. The film precipitation process will be applied to this paper standard by China National Standard (CNS) A4 Specifications (210X 297mm) -4-490604 A7 B7 V. Invention description ($ describes an example of such a temperature processing process. (Please read the precautions on the back before filling this page) When the wafer temperature is even a little different At a set of wafer temperatures, the thickness and quality of the film deposited on the wafer are obtained from a set of wafers. For example, in a film deposition process, The temperature difference of the wafer's temperature rc 'causes a thickness difference of 0.1 nm from the thickness of the film. If the film thickness is in the range of several nanometers to tens of nanometers, when the temperature of the group of wafers is several At 100 degrees Celsius, the temperature of the wafer must be controlled. With an accuracy of several degrees Celsius. When the reaction gas flows from the gas supply side to the exhaust side of the reaction tube at a constant flow, the concentration distribution of the reaction gas in the reaction tube is not uniform. If the temperature in different areas of the reaction tube is controlled in the same way and the distribution of the concentration of the reaction gas in the reaction tube is not uniform, films with different thicknesses are respectively deposited on different wafers. So, different The group temperature is respectively set as a plurality of heaters constructed in the direction of construction of a plurality of wafers, and the individual temperatures of the plurality of heaters are individually controlled. The Intellectual Property Bureau of the Ministry of Economic Affairs (in cooperation with the industry) prints the areas corresponding to the reaction tubes of a plurality of heaters individually through the allowable thickness range through the repetition of the correction of the thickness of the film to form the optimal group temperature, The optimal set temperature of the film with the correct and consistent thickness on the wafer in the reaction tube can be determined in the reaction tube, for example, by a method that includes the steps of placing multiple test wafers, with a set of temperatures on the wafer The thickness of the deposited film is measured by the mechanism of the measuring instrument, and a set of temperature conditions of a reaction tube corresponding to the output of multiple heaters is adjusted based on the measured thickness difference from the desired thickness. And in the adjusted set of warm paper sizes, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -5- f0604 A7 B7 V. Description of the invention (9 (Please read the precautions on the back before filling in this Page) to deposit the film on the test wafer. These steps are repeated until the difference in measured thickness from the desired thickness of the film is reduced to a predetermined degree. Therefore, a set of temperature bars is decided Used as a set of temperature conditions of a reaction tube corresponding to the output of multiple heaters. In some examples, when manufacturing a semiconductor device, different types of films are deposited in layers by a film precipitation process. In such examples In this case, the optimal set of temperature conditions in the reaction tubes corresponding to the outputs of the multiple heaters is determined as each film deposition process. Suppose, for example, that a first film is deposited on a wafer and then a second film is deposited. On the first film. The optimal set of temperature conditions in the reaction tubes corresponding to the outputs of the plurality of heaters is determined by the method of the first film precipitation process for forming the first film. Then, corresponding to a plurality of formations The best set of temperature conditions in the reaction tube of the output of the heater of the second film deposition process of the second film is the above method of precipitating the first film on the wafer under the optimal set of temperature conditions determined as above It is determined. Therefore, the optimal set of temperature conditions is individually determined as a deposition film on the wafer. Printed by the Industrial and Commercial Bureau of the Intellectual Property Bureau of the Ministry of Economic Affairs. However, in some examples, semiconductor device manufacturing The process requires the first film and the second film to be formed continuously. When the first film and the second film are formed continuously, the first film is deposited on a wafer carried on a temperature processing system, and then the second film is deposited on The first film does not need to be unloaded from the temperature processing system after the first film has been deposited. When the first film and the second film are thus continuously formed, only the first and second films are formed on the wafer. The data on the results of the film precipitation can be measured by a measuring instrument, and therefore the optimal set of temperatures for the first and second films are individually determined. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -6- 1604 A7 B7 V. Description of the Invention (The aforementioned method under condition j cannot be used. (Please read the notes on the back before filling this page) There are two different data on the results of measuring the precipitation of the first and second membranes. example. In the first example, if the first and second films are nitride films, the individual thicknesses of the first and second films cannot be measured individually, and only the sum of the individual thicknesses of the first and second films can be measured. In the second example, as in the case where the first film is an oxide film and the second film is a nitride film, the individual thicknesses of the first and second films can be measured individually. In the first example, the optimal set of temperature conditions can be determined as the film deposition process for depositing the first or second film. In this example, the sum of the individual thicknesses of the first and second films can be managed, but the individual thicknesses of the first and second films cannot be individually managed. In addition, the optimal set of temperature conditions may be determined by properly dividing the data on the results of the membrane precipitation as the membrane precipitation process for depositing the first and second membranes, respectively. However, in practice, it is unknown whether the division (allocation) is appropriate. Therefore, such film thickness management cannot achieve film thickness management of individual films. In the second example, the optimal set of temperature conditions for the film formation process for forming the first and second films must be determined in an appropriate order. If the first and second films are formed, The optimal set of temperature for the second film deposition process after the film is determined, and then the optimal set of temperature conditions for the first film deposition process to determine the first film is determined. A set of temperature conditions determines the optimum set of temperature conditions that affect the treatment of the second film to be deposited. Therefore, the optimal set of temperature conditions for the film precipitation process for depositing the second film must be readjusted. In this example, it is difficult to effectively determine the optimal set of temperature conditions. This paper size applies the Chinese National Standard (CNS) A4 specification (210X 29 * 7 mm) " 4m〇4 A7 B7 V. Description of the invention (g Although the film precipitation process has been described as an example of a temperature processing system, the aforementioned problems are generally Remaining in the temperature treatment process performed by the temperature treatment system (please read the precautions on the back before filling this page) The present invention has been made from the perspective of such a problem and therefore the object of the present invention is to provide the temperature that determines the temperature treatment process A method of treating a group of temperature conditions of a system, such as a film precipitation process for precipitating an object on a processed object, can respectively determine the optimal set of temperature conditions for continuously performing multiple temperature treatment processes in a reaction tube.-Invention The invention printed by the Ministry of Economic Affairs ’Intellectual Property Bureau ’s Consumer Industry Cooperative is a method for determining a set of temperature trajectories of a temperature treatment system that continuously conducts the first temperature treatment process and the second temperature treatment process to the object being processed. The method comprises the steps of: conducting a first temperature processing process from a temporary first set of temperature trajectories to a first processed temperature Test object; measuring the result of the first temperature treatment process conducted to the first test object being processed; based on the measured result of the first temperature treatment process, the first temperature treatment process is determined by correcting the temporary first set of temperature trajectories The first set of temperature trajectories; from the temporary second set of temperature trajectories, the second temperature treatment process is conducted to the second processed which has been conducted by using the determined first set of temperature trajectories to conduct the first temperature treatment process Test object; measuring the results of the second temperature processing process and the first temperature processing process conducted to the processed second test object; and calibrating based on the measured results of the first temperature processing process and the second temperature processing process The temporary second set of temperature trajectories determines the second set of temperature trajectories of the second temperature treatment process. This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm) -8- 490604 A7 B7 V. Description of the invention ( d (Please read the notes on the back before filling this page) According to the above characteristics, the temporary second set of temperature trajectories in the first temperature treatment process and the second temperature It is corrected based on the measured results of the physical process. The first set of temperature trajectories of the first temperature processing process has been corrected at this time point, and therefore, the second set of temperature trajectories of the second temperature processing process is optimal. It is best if the first set of temperature trajectories are fixed and the second set of temperature trajectories are fixed. — In this example, the differences between the objects processed by the temperature processing system as a result of the temperature processing process, Such as the difference in film thickness, can be reduced. The average thickness of the film formed on the processed object depends on the process temperature. In addition, the first set of temperature trajectories is variable and the second set of temperature trajectories is variable Printed by the Consumer Cooperative of the 4th Bureau of Wisdom and Finance of the Ministry of Economic Affairs. In this example, in addition to the reduction of the differences between the objects processed by the temperature processing system at the same time as the result of the temperature processing process, such as the difference in film thickness, the temperature processing process As a result, differences between parts of each object, such as film thickness, can be reduced. Appropriate temperature gradients can be established by utilizing the rate of heat conduction of an object during a temperature treatment process between a part of the object being treated by the temperature change group and surrounding parts. Therefore, differences in film deposition conditions, such as the concentration of the source gas, between peripheral parts and a part of the object being processed can be offset. In addition, it is preferable that the temperature processing system is divided into a plurality of regions that can be individually heated; the first set of temperature trajectories are separately determined as the regions of the temperature processing system; the first set of temperature trajectories of the regions are different from each other; the second The temperature trajectory of each group is determined as the area of the temperature processing system; the first paper size of the area applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) -9- 490604 A7 B7 V. Description of the invention ($ 2 The temperature trajectories are different from each other. (Please read the note on the back before filling this page.) Therefore, this method can effectively deal with examples of different temperature processing conditions that need to be set in the direction of the construction of the layered object. In addition, it is preferable that the first temperature treatment process is a process of forming a gate oxide film using thermal oxidation, and the second temperature treatment process is a nitride process of a nitride gate oxide film. In addition, the invention determines to continuously conduct the first temperature. Method of processing process, second temperature processing process and third temperature processing process to a set of temperature trajectories of a temperature processing system of a processed object, the The method includes the steps of: conducting a first temperature treatment process to a processed first test object using a temporary first set of temperature trajectories; measuring a result of the first temperature treatment process conducted to the processed first test object; Based on the measured results of a temperature processing process, the first set of temperature trajectories of the first temperature processing process is determined by the correction of the first set of temperature trajectories; by using the second set of temperature trajectories, employees of the Intellectual Property Bureau of the Ministry of Economic Affairs The consumer cooperative prints the second temperature treatment process that has been conducted to the processed second test object that has conducted the first temperature treatment process using the determined first set of temperature trajectories; the measurement is conducted to the second test object that is processed The results of the first temperature treatment process and the second temperature treatment process; based on the measured results of the first temperature treatment process and the second temperature-treatment process, the correction of the temporary second set of temperature trajectories determines the second temperature treatment process. Two sets of temperature trajectories; from the use of a temporary third set of temperature trajectories, conducting the third temperature treatment process to the One set of temperature trajectories conducts the first temperature treatment process to the third test object that has been processed by using the determined second set of temperature trajectories to conduct the second temperature processing process; the measurement conducts to the processed third test object The paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇 ×: 297mm) -10- 490604 A7 ____B7_ V. Description of the invention (3 (Please read the precautions on the back before filling this page) Third temperature The results of the processing process, the second temperature processing process, and the first temperature processing process; and based on the measured results of the first temperature processing process, the second temperature processing process, and the third temperature processing process, a temporary third group temperature is corrected based on the measured results The trajectory determines the third set of temperature trajectories of the third temperature treatment process. In this example, according to the result of the first temperature treatment process, a group of temperature conditions in the reaction tubes of the first temperature treatment process can be optimized, And by using a set of temperature conditions according to the results of the first and second temperature treatment processes, one set of temperature conditions in the reaction tubes of the second temperature treatment process can be optimized. Of. Then, by using a set of temperature conditions based on the results of the first, second, and third temperature treatment processes, one set of temperature conditions in the reaction tubes of the third temperature treatment process can be optimized. Therefore, one set of temperature conditions for the first, second and third temperature processing processes can be managed. One set of four or more temperature treatment processes can be optimized in a similar manner. Preferably, the first set of temperature trajectories is fixed, the second set of temperature trajectories is fixed, and the third set of temperature trajectories is fixed. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In addition, the first set of temperature trajectories is variable, the second set of temperature trajectories is variable, and the third set of temperature trajectories is variable. In addition, it is preferable that the temperature processing system is divided into a plurality of regions that can be individually heated; the first set of temperature trajectories are separately determined as the regions of the temperature processing system; the first set of temperature trajectories of the regions are different from each other; the second The group of temperature trajectories are respectively determined as the regions of the temperature processing system; the second group of temperature trajectories of the region are different from each other; the third group of temperature trajectories are respectively determined as the regions of the temperature processing system; the third group of temperature trajectories of the region The paper size is not applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -11-490604 A7 B7 V. Description of the invention ($ same. (Please read the notes on the back before filling this page) In addition, The invention is a method for determining a group of temperature trajectories for continuously conducting the first temperature processing process and the second temperature processing process to a temperature processing system of a processed object. The method includes the steps of using a temporary first set of temperature trajectories, Conducting the first temperature treatment process to the processed first test object; measuring the first temperature treatment process conducted to the processed first test object The first set of temperature trajectories of the first temperature processing process is determined by correcting the temporary first set of temperature trajectories on the basis of the measured results of the first temperature processing process; by using the temporary second set of temperature trajectories, the first The second temperature treatment process to the processed second test object that has been conducted using the determined first set of temperature trajectories; the result of the second temperature treatment process that is transmitted to the processed second test object ; And based on the measured results of the second temperature processing process, the second set of temperature trajectories of the second temperature processing process is determined by the correction of the temporary second set of temperature trajectories. In the example, one set of temperatures in the reaction tube regarding the results of each continuous temperature treatment process can be optimized. In this example, the optimal set of temperatures is determined as the first temperature treatment process, that is, the previous temperature treatment Process, and then the optimal set of temperatures is > determined as the second temperature processing process, that is, the subsequent temperature processing process. Therefore, the first temperature at The readjustment of the optimal set of temperatures of the process is not required, and therefore the optimal set of temperatures inside the reaction tube can be effectively determined. In addition, the invention is a continuous conduction of the first temperature treatment process and the second temperature Method for processing process to processed object, the method includes the steps of: using a temporary first set of temperature trajectories to conduct the first temperature processing process I paper size applicable to Chinese National Standard (CNS) A4 specification (210X 297 mm)- 12- 490604 Λ7 B7 V. Description of the invention (such as (please read the precautions on the back before filling this page) to the processed first test object; measure the temperature of the first temperature processing process conducted to the processed first test object Result; based on the measured results of the first temperature processing process, the first set of temperature trajectories of the first temperature processing process is determined by correcting the temporary first set of temperature trajectories; by using the temporary second set of temperature trajectories, the first The second temperature treatment process to the processed second test object that has been conducted by the first temperature treatment process using the determined first set of temperature trajectories; the measurement conduction The results of the second temperature treatment process and the first temperature treatment process of the processed second test object; based on the measured results of the first temperature treatment process and the second temperature treatment process, the temporary second set of temperature trajectories are corrected by Determine the second set of temperature trajectories for the second temperature treatment process; use the determined first set of temperature trajectories to conduct the first temperature treatment process to the object being processed; and use the determined second set of temperature trajectories , Conducting the second temperature processing process to the processed object that has conducted the first temperature processing process. Printed by the S Industry Consumer Cooperative of the 4th Bureau of the Ministry of Economic Affairs. In addition, the invention is a method for continuously conducting the first temperature processing process, the second temperature processing process and the third temperature processing process to a processed object. The method includes steps: By using a temporary first set of temperature trajectories, the first temperature treatment process is conducted to the processed first test object; the results of the first temperature treatment process conducted to the processed first test object are measured; the first temperature treatment process Based on the measured results, the correction of the temporary first set of temperature trajectories determines the first set of temperature trajectories of Table 1 'temperature processing process; from the use of the temporary second set of temperature trajectories, the second temperature processing process is conducted to the The processed second test object of the first temperature treatment process is conducted by using the determined first set of temperature trajectories; the measurement is transmitted to the processed second test object. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297). (Mm) -13- 490604 A7 B7___ 5. The first temperature treatment system of & description of the invention (& please read the notes on the back before filling this page) And the result of the second temperature treatment process; based on the measured results of the first temperature treatment process and the second temperature treatment process, the correction of the temporary second set of temperature trajectories determines the second set of temperature trajectories of the second temperature treatment process ; From the use of a temporary third set of temperature trajectories, conducting the third temperature treatment process to the use of the determined first set of temperature trajectories, and the use of the determined first set of temperature trajectories, and to the use of the determined second set of temperature trajectories The processed third test object conducting the second temperature processing process; measuring the results of the third temperature processing process, the second temperature processing process and the first temperature processing process conducted to the processed third test object; at the first temperature Based on the measured results of the processing process, the second temperature processing process and the third temperature processing process, the third set of temperature trajectories of the third temperature processing process is determined by the correction of the temporary third set of temperature trajectories based on the measured results; A set of temperature trajectories, which conduct the first temperature treatment process to the object being processed; by using the determined second set of temperature trajectories, conduct the second From the first temperature treatment process to the processed objects that have already conducted the first temperature treatment process and by using the determined third set of temperature trajectories, the third temperature treatment process is conducted to the time between the first temperature treatment process and the second temperature treatment process. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In addition, the invention is a method for continuously transmitting the first temperature processing process and the second temperature processing process to the processed object. The method includes the steps of: The first set of temperature trajectories conducts the first temperature treatment process to the processed first test object; measures the results of the first temperature treatment process conducted to the processed first test object; the measured results of the first temperature treatment process Based on the results, the first set of temperature trajectories of the first temperature processing process is determined by the correction of the first set of temperature trajectories; the second set of temperatures is used. The paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -14) 490604 A7 B7 V. Description of the invention ((Please read the notes on the back before filling this page) Line to conduct the second temperature treatment process to the processed second test object that has conducted the first temperature treatment process using the determined first set of temperature trajectories; measure the second temperature conducted to the processed second test object The results of the processing process; based on the measured results of the second temperature processing process, the second set of temperature trajectories of the second temperature processing process is determined by the emperor's temporary second set of temperature trajectories; The temperature trajectory conducts the first temperature processing process to the processed object; and the second set of temperature trajectories determined is used to conduct the second temperature processing process to the processed object that has conducted the first temperature processing process. Brief Description of the Drawings Figures 1A and 1B are explanatory diagrams to help explain the preferred embodiment of the present invention; Figure 2 is the best of the reaction tubes to determine the output corresponding to a plurality of heaters forming two films continuously Flow chart of the optimal temperature set procedure for a set of temperatures; Figure 3 is a flowchart of step 121 shown in Figure 2; Figure 4 is a flowchart of step 1 2 2 not shown in Figure 2; Intellectual Property Bureau of the Ministry of Economic Affairs a (Figures 5A to 5C printed by the Industrial and Commercial Cooperatives are wafer temperature control charts that help explain the best first set of temperature determining procedures for determining the best first set of temperatures for depositing the first film; Figures 6A and 6B are helpful Wafer temperature control diagrams for explaining the optimal second set of temperature determining procedures that determine the optimal second set of temperatures for depositing the second film; Figures 7A to 7C are helpful in explaining the first dynamic set for determining the best set of first films to be deposited The wafer temperature control chart of the first dynamic group temperature determining program for the best temperature; This paper size applies the Chinese national standard (CNS) A4 specification (210X297 mm) -15- 490604 A7 B7 V. Description of the invention (known as Figure 8A And 8B help explain the best second dynamic set for deciding the precipitation of the second membrane Wafer temperature control chart of the optimal second dynamic group temperature determination procedure of degrees; FIGS. 9A to 9C are diagrams to help explain the effect of reducing the temperature of forming a film on a wafer with a uniform thickness; FIGS. 10A to 10C It is a graph supporting the film thickness distribution of wafers on a wafer ship. Figure 11 Figures 2 to 4 show the optimal set of temperatures in a plurality of reaction tubes that determine the output of two 1¾¾¾ heaters in succession. Flow chart of the optimal set of temperature determination procedures; FIG. 12 is a flow chart of step 2 2 1 shown in FIG. 11; FIG. 13 is a flow chart of step 2 2 2 shown in FIG. 11; 1A is a flowchart of a process for continuously forming first and second films by the temperature processing system shown in FIG. 1; and FIG. 15 is a diagram showing components of a gate oxide film deposition process and a relative example of the gate oxide film in the embodiment of the present invention. Table of components for the precipitation process. (Please read the precautions on the back before filling out this page) Printed component comparison table for the Intellectual Property of the Ministry of Economic Affairs and Industrial Cooperatives 1.1 Response tube 37 Condition evaluation unit 38 Control unit 39 Offline optimization unit 16 Manifold 17 Base Surface Zhang scale is applicable to China National Standard (CNS) A4 specification (210X 297 mm) -16- 490604 A7 B7 V. Description of the invention 18 Cover 14 Wafer 19 Boat elevator 22 Ring heater 23 Ring heater 24 Ring heater 25 Ring heater 26 Ring heater 20 Gas supply line 21 Exhaust line 27 External thermocouple 28 External thermocouple 29 Outer thermocouple 30 Outer thermocouple 31 Outer thermocouple 32 Inner thermocouple 33 Inner thermocouple 34 Inner thermocouple 35 Inner thermocouple 36 Inner thermocouple -----; ---.---- install ------ Order ------ (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) -17- 490604 A7 B7 V. Description of the invention (^ more DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described with reference to the accompanying drawings. 1A and 1B are diagrams for explaining a preferred embodiment of the present invention. As shown in FIG. 1A, this embodiment is a temperature processing system including a reaction tube 11, peripheral devices related to the reaction tube 11, a condition evaluation unit 37, a control unit 38, and an offline optimization unit 39. The reaction tube 11 and its peripheral devices are shown in a cross section, and the condition evaluation unit 37, the control unit 38 and the optimization unit 39 are shown in a block diagram. The reaction tube 11 has a closed upper end. The lower end of the reaction tube 11 is hermetically supported between the lower surface of the base surface 17 and the upper end of the manifold 16. The inner tube 12 has an open upper end and a lower end which supports a bracket protruding from the inner surface of the manifold 16. A wafer boat 13 supporting a plurality of wafers 14, that is, an object to be processed, for example, '150 wafers' is placed in the reaction tube 11 in a horizontal state at vertical intervals. The wafer ship 13 is supported on the cover 18 via a thermally insulating post 15. The lid 18 is mounted on a ship lift 19 for carrying the wafer ship 13 into and out of the reaction tube 11. The lid 18 is lifted to its upper limit position to close the lower opening end of the manifold 16 ', i.e., the lower opening ends of the processing vessels constituting the reaction tubes 11 and the manifold 16. The ring heaters 22 to 26 include, for example, a resistance heating element which is advantageously arranged around the reaction tube 11. The heaters 22 to 26 are stacked axially, that is, in the direction of construction of the wafer 14. The individual temperature generation rates of the heaters 22 to 26 are controlled by the control unit 38, respectively. The gas supply line 20 is extended to the manifold 16 to supply gas into the paper. The paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) (please read the precautions on the back before filling this page) Order the Ministry of Economic Affairs Printed by the Intellectual Property Bureau Employee Consumption Cooperative ¾ -18- The Intellectual Property Bureau of the Ministry of Economic Affairs (printed by the Industrial and Consumer Cooperatives 490604 A7 B7___ V. Description of the invention (凫 pipe 1 2. Discharge pipe 2 1 is connected to the manifold 16 to The gas is discharged from the annular space between the inner tube 12 and the reaction tube 11. Generally, a plurality of gas supply lines are connected to the manifold 16 to supply multiple gases into the inner tube 12. However, only a single gas supply line 20 is simplified Ground display. The discharge line 21 is provided with a pressure regulator, not shown, to adjust the pressure of the reaction tube 11. External thermocouples 27 to 31 are attached to the inner surfaces of the heaters 22 to 26 to measure the external thermocouple attached. The temperature of the parts of heaters 22 to 26 from 27 to 31. The inner thermocouples 32 to 36 are attached to the inner surface of the inner tube 12 at positions corresponding to the outer thermocouples 27 to 31 to measure the thermocouples 32 to 36 attached. The temperature of the parts inside the tube 1 2. Representative The signals of the temperature measured by the outer thermocouples 27 to 31 and the inner thermocouples 32 to 36 are sent to the condition evaluation unit 37. The control signals of the control heaters 22 to 26 are also sent to the condition evaluation unit 37 through the control unit 38. Control evaluation The unit 37 evaluates the condition (temperature) of the wafer 14 being processed by the temperature processing process of the reaction tube 1 1 from the measured temperature and the control signal. This evaluation is necessary because the temperature of the wafer 14 and the temperature are directly measured It is very difficult for the processing process to be conducted to the wafer 14. The temperature of the wafer 14 is directly related to the parameters of the film deposited on the wafer 14, and therefore the control of the temperature of the wafer 14 is basically necessary. The mode is used to evaluate the temperature of the wafer 14 from the control signals of the control heaters 27 to 31 and the temperature measured by the outer thermocouples 27 to 31 and the inner thermocouples 32 to 26. The mode is stored under conditions Evaluation unit 37. Therefore, the condition evaluation unit 37 is adapted to evaluate the temperature of the wafer 14 from the control signals of the control heaters 27 to 31 and the external thermocouples 27 to 31 1 and this paper standard is applicable to the Chinese National Standard (CNS) A4 (210X297mm) " ~ ~ -19- --- J ------- install ------ order ------ (Please read the precautions on the back before filling this page ) 490604 A7 B7
五、發明説明（lV 內熱電偶32至26測量之溫度。 (請先閱讀背面之注意事項再填寫本頁) 該模式也許被設計以在晶圓船1 3上所支撐的位置之 間在晶圓船1 3上之選擇的位置評估多個晶圓丨4的溫度。 下列說明中，假設五區域中之五晶圓個別的溫度’即’分 別是晶圓船1 3的上區域，上中區域，中區域，下中區域與 下區域被評估。 該模式也許被設計以評估多個零件的溫度，如單晶圓 14的周邊零件與中央零件。晶圓的此二零件的溫度的評估 由利用晶圓14之熱傳導的速率在建立晶圚14的周邊與中 央零件間之正確的溫度層次是有用的。 晶圓14經評估的溫度被送至控制單元3 8。控制單元 3 8比較經評估的溫度與一組溫度且計算正確的控制訊號。 經計算的控制訊號被送至加熱器22至26與條件評估單元 37 〇 經濟部智慧財產局員工消費合作社印製 該組溫度是透過最佳化決定之平常的半導體裝置製造 之最佳溫度。最佳化意爲校正的重複以在允許的範圍獲得 溫度處理製程的結果，如預定厚度的膜的成型。本發明以 由決定最佳一組溫度（一組溫度軌線）的方法爲特色。爲 決定最佳一組溫度，測試晶圓被置於先前實際的半導體裝 置製造作業之圖1 A所示之溫度處理系統。測試晶圓係由膜 沈澱製程處理，且經處理的測試晶圓被測量以獲得膜沈澱 的結果上之資料。膜沈澱的結果上之資料被送至如圖1 B所 示之離線最佳化單元39。接著，圖1 A所示之溫度處理系統 由使用經校正的一組溫度傳導膜沈澱製程至其它測試晶 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） -20- 490604 A7 B7 五、發明説明（4 圓。經處理的測試晶圓被測量以獲得膜沈殿的結果上之資 料。最佳化單元39也許是儲存預定程式之個人電腦。 (請先閲讀背面之注意事項再填寫本頁) 圖1 A所示之溫度處理系統之控制變數包括由氣體供 應管路2 0運送之氣體的流率與反應管1 1之壓力。那些參 數不直接與本發明有關且因此其說明與舉例將被省略。 順便一提，該組溫度，反應管1 1之壓力及氣體的流 率相依於由膜沈澱製程沈澱之膜的厚度與類型，即，溫度 處理製程。包括一組溫度，特定的膜之反應管11之壓力及 氣體的流率之處理設計特定的製程條件稱爲製作法 recipe 〇 此實施例不直接與反應管1 1之壓力及氣體的流率有關而是 與該組溫度有關。 經濟部智慧財產局員工消費合作社印製 決定圖1所示之溫度處理系統之該組溫度之程序將於 圖2至4而說明。圖2至4是決定對應於多個連續地形成 兩膜之加熱器的輸出之反應管中之最佳一組溫度之最佳一 組溫度決定程序的流程圖。該兩膜係連續地形成於層中。 在此範例中，形成兩層膜之兩膜個別的厚度不能被個別地 測量且僅可以測量那些厚度的和。此例相當於氮化膜被形 成且另一氮北膜被形成於前者上之例子。 假設兩層膜的厚度需要在預定的厚度範圍中大約特定 値，如4nm +- 0.5%的範圍，且第一膜的厚度，即，下膜， 需要在預定的厚度範圍中大約特定値，如1.5nm 1.0%的 範圍。 爲符合這樣的需求，沈澱第一膜之最佳一組溫度（一 組溫度軌線），即，下膜，被決定於圖2所示之步驟121 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -21 - 經濟部智慧財產局員工消費合作社印製 490604 A7 ____:___B7 _ 五、發明説明（ 中’且接著沈澱第二膜之最佳一組溫度（一組溫度軌 線），即，上膜，被決定於步驟122中。 參考圖3，爲決定沈澱第一膜之最佳一組溫度，多個 試測晶圓在步驟1 3 1中受制於圖1 A所示之溫度處理系統之 第一膜沈澱製程。多個晶圓分別包括晶圓船丨3的上區域， 上中區域，中區域，下中區域以及下區域支持之五晶圓。 通常’形成第一膜之第一膜沈澱製程係連續地隨著形成第 二膜之第二膜沈澱製程不需自溫度處理系統卸下測試晶 圓。然而，在此實施例中，測試晶圓係在已在測試晶圓上 形成第一膜後自溫度處理系統卸下。第一膜沈殿製程對所 有五測試晶圓使用標準溫度。 於各經卸下的測試晶圓上形成之第一膜的厚度在步驟 132中係由膜厚度測量儀器測量，如empsometer。膜沈澱 的結果上之資料在步驟1 3 3中係送至圖1 B所示之最佳化單 元39。最佳化單元39在步驟134中計算且輸出經校正的第 一組溫度。 一代表包括溫度之參數的値與其成長之膜厚度間之關 係之實際模式預先被儲存於最佳化單元39中。最佳化單元 39使用該計算之模式。所考慮更適當之經校正的第一組溫 度可以由使用該模式得自膜沈澱與目前第一組溫度的結果 上之資料。 接著，其它測試晶圓在步驟1 3 5中由使用圖1 A所示 之溫度處理系統之經校正的第一組溫度受制於膜沈澱製 程。測試晶圓係在已在測試晶圓上沈澱第一膜後自溫度處 本紙張尺度適用中國國家標準（CNS )八4規格（210X297公釐） i_____φ 裝______、玎_____Φ, (請先閱讀背面之注意事項再填寫本頁) -22- 490604 A7 B7 五、發明説明（土 理系統卸下。沈澱於各測試晶圓之第一膜的厚度在步驟1 36 中係由膜厚度測量儀器測量，如elHpsometer。 (請先閲讀背面之注意事項再填寫本頁) 經測量的厚度在步驟1 37被與預定的厚度範圍比較， $Π l_5nm + -1.0%。如果經測量的厚度是在此預定的厚度範圍 中’決定沈澱第一膜之最佳第一組溫度之程序被完成。因 此’用作沈澱該膜之經校正的第一組溫度（經校正的一組 溫度軌線）是最佳第一組溫度（一組溫度軌線）。 如果經校正的厚度沒落在預定的厚度範圍中，該程序 回至步驟133。接著，膜沈澱的結果被送至最佳化單元 39，且最佳化單元39計算另一經校正的第一組溫度。因 此’適合作沈澱具落在預定厚度範圍中之厚度之最佳第一 組溫度（經校正的第一組溫度）也許最後被獲得。 因此，適合作沈澱符合需要的規格之第一膜之最佳第 一組溫度可以由僅沈澱兩·膜外之第一膜由第一膜沈澱製程 且測量經沈澱的第一膜的厚度而決定。 經濟部智慧財1局員工消贫合作社印製 隨後，適合作沈澱第二膜，即，上膜，之最佳第二組 溫度被決定。如圖4所示，首先，第一膜係由使用如上決 定之最佳第一組溫度形成於多個溫度處理系統支持之測試 晶圓上，且第二膜沈澱製程續於以第一膜沈澱製程被實行 以在步驟1 4 1中不需在第一膜的沈澱後自溫度處理系統卸 下測試晶圓而沈澱第二膜於第一膜上。多個測試晶圓分別 包括晶圓船1 3的上區域，上中區域，中區域，下中區域以 及下區域支持之五區域。第二膜沈澱製程對所有五測試晶 圓使用標準溫度。在第一膜與第二膜已經在各測試晶圓之 本紙張尺度適用中國國家標隼（CMS ) A4規格（210X297公釐） -23- 490604 A7 _ B7 五、發明説明（么 層上沈澱後，測試晶圓係自溫度處理系統卸下。 (請先閲讀背面之注意事項再填寫本頁) 於各經卸下的測試晶圓上形成之第一膜與第二膜的和 的厚度在步驟 142中由膜厚度測量儀器測量，如 elhpsometer。在此例中，第一膜與第二膜個別的厚度不被 個別地測量。膜沈澱的結果上之資料在步驟1 43中被送至 圖1B所示之最佳化單元39。最佳化單元39在步驟144計 算且輸出經校正的第二組溫度。 一代表包括溫度之參數的値與其成長之膜厚度間之關 係之實際模式預先被儲存於最佳化單元39中。最佳化單元 39使用該計算之模式。所考慮更適當之經校正的第二組溫 度可以由使用該模式得自膜沈澱與目前第二組溫度的結果 上之資料，其實質上類似於決定最佳第一組溫度之程序。 接著，第一與第二膜在步驟145中係由使用由圖1A 所示之溫度處理系統沈澱第二膜之經校正的第二組溫度 (一組溫度軌線）連續地沈澱於其它測試晶圓上。該測試 晶圓係在第一與第二膜已於各測試晶圓上沈澱後自溫度處 理系統卸下。 經濟部智慧財產局員工消費合作钍印^ 由於各測試晶圓上沈澱之第一與第二膜組成之兩層膜 的厚度在步驟146中係由膜厚度測量儀器測量，如 ellipsometer 〇 經測量的厚度在步驟1 47被與預定的厚度範圍比較， 如4nm + -0.5%。如果經測量的厚度是在此預定的厚度範圍 中’決定沈澱第二膜之最佳第一組溫度之程序被完成。因 此，用作沈澱該膜之經校正的第二組溫度（經校正的一組 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -24- 490604 A7 B7 五、發明説明（i 溫度軌線）是最佳第一組溫度（一組溫度軌線）。 (請先閱讀背面之注意事項再填寫本頁) 如果經校正的厚度沒落在預定的厚度範圍中，該程序 回至步驟14 3。接著，膜沈澱的結果被送至最佳化單元 3 9，且最佳化單元3 9計算另一經校正的第一組溫度。因 此，適合作沈澱具落在預定厚度範圍中之厚度之第二膜之 最佳第二組溫度（經校正的一組溫度）也許最後被獲得。 因此，此實施例達成適合作爲將近一組値沈澱具落在 預定厚度範圍中之厚度（溫度處理的合成結果）之兩層膜 與作爲將近一組値沈澱具落在預定厚度範圍中之厚度（第 一溫度處理的結果）之最佳第一組溫度與最佳第二組溫度 的決定。所以，可以管理第二膜（第二溫度處理的結果） 的厚度。 圖1 A所示之溫度處理系統能夠由使用因此決定之最 佳第一組溫度與最佳第二組溫度達成沈澱符合需要的規格 (品質）之膜之半導體裝置製造作業。 經濟部智慧財產局員工消費合作社印製 當更多膜的其中之三被連續地在層中沈澱（一個接著 另一個之上）且膜個別的厚度不能被個別地測量，且沈澱 各膜之最佳一組溫度可以由前述的最佳一組溫度決定程序 而決定。 當三膜，即，第一，第二與第三膜，被沈澱於晶圓 上，沈澱第一膜之第一膜沈澱製程被執行且最佳第一組溫 度被決定。接著，由使用最佳第一組溫度之第一膜沈澱製 程與由使用最佳第二組溫度之第二膜沈澱製程被連續地執 行且最佳第二組溫度被決定。接著，由使用最佳第一組溫 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -25- 490604 A7 ___B7 五、發明説明（4 (請先閱讀背面之注意事項再填寫本頁) 度之第一膜沈澱製程，由使用最佳第二組溫度之第二膜沈 澱製程與沈澱第三膜之第三膜沈澱製程被連續地執行且最 佳第三組溫度被決定。沈澱四或更多膜之最佳一組溫度可 以以相同的方式而決定。 當決定最佳第一組溫度與最佳第二組溫度時，由圖 1A所示之溫度處理系統處理之測試晶圓的經控制溫度變化 將參考圖5A至6B說明。 圖5A至5C是助於解釋決定沈澱第一膜之最佳第一組 溫度之最佳第一組溫度決定程序的晶圓溫度控制圖。圖5A 顯示代表當形成第一與第二膜於晶圓上時之溫度變化之名 義上的溫度變化曲線。參考圖5A，晶圓被加熱至800°C， 晶圓被保持在800°C數分鐘當作第一溫度穩定製程，第一膜 沈澱製程被執行以沈澱第一膜，且接著第一退火製程被執 行以退火第一膜。晶圓在第一溫度穩定製程期間被保持在 800°C固定的控制溫度。 經濟部智慧財凌局B(工消費合作社印製 接著，晶圓的溫度被降低至760 °C，晶圓被保持在 76(TC當作第二溫度穩定製程，第二膜沈澱製程被執行以沈 澱第二膜，且接著第二退火製程被執行以退火第二膜。晶 圓在第二溫度穩定製程，第二膜沈澱製程與第二退火製程 期間被保持在76(TC固定的控制溫度。晶圓的溫度在第二退 火製程的完成後被降低以致於晶圓可以自溫度處理系統卸 下。 當第一與第二膜沈澱製程之溫度根據名義上的溫度控 制圖而控制時，第一膜沈澱製程之最佳第一組溫度（名義 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -26- 490604 A7 ____B7 _ 五、發明説明（A · 上8 00°C )係由下列程序決定。 (請先閱讀背面之注意事項再填寫本頁) 參考圖5 B顯示溫度上升製程，第一溫度穩定製程， 第一膜沈澱製程，第一退火製程與第一溫度降低製程，第 一膜係由使用名義上沈澱當作第一組溫度（一組溫度軌 線）。最佳化單元39在膜沈澱的結果上之資料的基礎上計 算一經校正的第一組溫度且另一第一膜係由使用經較正的 第一組溫度之第一膜沈澱製程沈澱。這些第一膜沈澱與第 一組溫度校正的步驟被重複直到符合需要的規格（品質） 之厚度的第一膜被形成。圖5C顯示因此決定之最佳第一組 溫度。如圖5 C所示，晶圓船13的上，上中，中，下中， 卜G域之最佳弟一'組溫度’例如，分別是8 1 〇 C，8 0 5 °C， 802°C，800°C與798°C。圖5C中，溫度變化曲線被誇大以 易於了解晶圓船的上，上中，中，下中，下區域之最佳第 一組溫度間之差異。相同的誇大手法被應用至其它圖。 因此，適於沈澱符合需要的規格之第一膜之最佳第一 組溫度可以由僅第一膜沈澱製程沈澱兩膜外之第一膜且測 量經沈澱的第一膜的厚度而決定。 經濟部智慧財產局員工消費合作社印製 圖6A與6B是是助於解釋決定沈澱第二膜之最佳第二 不且溫度之最佳弟一組溫度決疋程序的晶圓溫度控制圖。沈 澱第二膜之最佳第二組溫度（名義上760°C的溫度）係由下 列程序決定。 參考圖6A，使用名義上的溫度沈澱第二膜之第二膜 沈澱製程隨著由使用最佳第一組溫度之第一膜沈澱製程而 執行。最佳化單元39在膜沈澱的結果上之資料的基礎上計 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ' 一 -27- 490604 A7 ___ B7 五、發明説明（凫 (請先閲讀背面之注意事項再填寫本頁) 算經校正的第二組溫度且第二膜係由使用經校正的第二組 溫度之第二膜沈澱製程沈澱。這些第二膜沈澱與第二組溫 度校正的步驟被重複直到符合需要的規格之厚度的第二膜 被形成。圖6B顯示因此決定之最佳第二組溫度。如圖6B 所示，晶圓船13的上，上中，中，下中，下區域之最佳第 二組溫度，例如，分別是7550°C，75 8°C，759°C，760°C與 762t。 因此，達成適於作爲將近一組値沈澱具落在預定厚度 範圍中之厚度（溫度處理的合成結果）之兩層膜與作爲將 近一組値沈澱具落在預定厚度範圍中之厚度（第二溫度處 理的結果）之最佳第一組溫度與最佳第二組溫度的決定是 可能的。所以，可以管理第二膜（第二溫度處理的結果） 的厚度。 另一作爲決定圖MA所示之溫度處理系統上之最佳第 一組溫度與最佳第二組溫度使用之測試晶圓的控制溫度變 化的模式將參考圖7A至8B而說明。 經濟部智慧財產局員工消費合作社印製 圖7A至7C是助於解釋決定沈澱第一膜之最佳第一動 態組溫度之最佳第一動態組溫度決定程序的晶圓溫度控制 圖。圖7A顯示代表當形成第一與第二膜於晶圓（被處理之 物件）上時之溫度變化之名義上的溫度變化曲線。參考圖 7A，晶圓被加熱，晶圓被保持在一溫度數分鐘當作第一溫 度穩定製程，第一膜沈澱製程被執行以沈澱第一膜，且接 著第一退火製程被執行以退火第一膜。 在第一膜沈澱製程中，溫度依時間被一點點地降低。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -28 - 490604 A7 B7V. Description of the invention (The temperature measured by thermocouples 32 to 26 in lV. (Please read the precautions on the back before filling out this page) This mode may be designed to crystallize between the positions supported on the wafer ship 13 The temperature of multiple wafers 4 is evaluated at a selected position on the round boat 13. In the following description, it is assumed that the individual temperatures of five wafers in the five regions are the upper regions of the wafer boat 1 and 3, respectively. The area, the middle area, the lower middle area, and the lower area are evaluated. This model may be designed to evaluate the temperature of multiple parts, such as the peripheral parts and the central part of a single wafer 14. The temperature evaluation of these two parts of the wafer It is useful to establish the correct temperature hierarchy between the periphery of the wafer 14 and the central part by utilizing the rate of heat transfer from the wafer 14. The evaluated temperature of the wafer 14 is sent to the control unit 38. The control unit 38 compares the The evaluated temperature and a set of temperature and the correct control signal are calculated. The calculated control signal is sent to the heaters 22 to 26 and the condition evaluation unit 37 〇 The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints this set of temperatures through the best Turn into The optimum temperature for the usual semiconductor device manufacturing. Optimization means repetition of calibration to obtain the results of the temperature processing process within the allowable range, such as the formation of a film of a predetermined thickness. The present invention determines the optimal set of temperatures ( A set of temperature trajectories). In order to determine the optimal set of temperatures, the test wafer is placed in the temperature processing system shown in Figure 1A of the previous actual semiconductor device manufacturing operation. The test wafer is deposited by a film The process is processed, and the processed test wafer is measured to obtain the data on the result of the film deposition. The data on the result of the film deposition is sent to the offline optimization unit 39 shown in FIG. 1B. Then, FIG. 1 The temperature processing system shown in A is from the use of a calibrated set of temperature-conducting film precipitation processes to other test crystals. Paper size is applicable to China National Standard (CNS) A4 (210X297 mm) -20- 490604 A7 B7 V. Invention Explanation (4 circles. The processed test wafer is measured to obtain the information on the results of the film Shen Dian. The optimization unit 39 may be a personal computer that stores the predetermined program. (Please read the back first Note that this page is to be filled in again.) The control variables of the temperature treatment system shown in Figure 1A include the flow rate of the gas transported by the gas supply line 20 and the pressure of the reaction tube 11. Those parameters are not directly related to the present invention and Therefore, its description and examples will be omitted. By the way, the set of temperature, the pressure of the reaction tube 11 and the flow rate of the gas depend on the thickness and type of the film deposited by the film precipitation process, that is, the temperature treatment process. Including a Group temperature, specific membrane pressure of reaction tube 11 and treatment of gas flow rate. Design specific process conditions are called recipes. This embodiment is not directly related to the pressure of the reaction tube 11 and the gas flow rate. It is related to the temperature of this group. The process of printing and determining the temperature of the temperature processing system shown in Figure 1 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs will be described in Figures 2 to 4. Figures 2 to 4 are flowcharts of the optimum set of temperature determination procedures for determining the optimum set of temperatures in the reaction tube corresponding to the output of a plurality of heaters that successively form two films. The two films are continuously formed in the layer. In this example, the individual thicknesses of the two films forming the two-layer film cannot be measured individually and only the sum of those thicknesses can be measured. This example corresponds to an example where a nitride film is formed and another nitrogen north film is formed on the former. It is assumed that the thickness of the two-layer film needs to be approximately specified in a predetermined thickness range, such as a range of 4nm + -0.5%, and the thickness of the first film, that is, the lower film, needs to be approximately specified in a predetermined thickness range, such as 1.5nm 1.0% range. In order to meet such requirements, the optimal set of temperatures (a set of temperature trajectories) for the first film to be deposited, that is, the lower film, is determined in step 121 shown in FIG. 2. This paper size applies Chinese National Standard (CNS) A4. Specifications (210X297 mm) -21-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 490604 A7 ____: ___ B7 _ V. Description of the invention (Medium 'and then the best set of temperatures for the second film (a set of temperature trajectories) ), That is, the upper film, is determined in step 122. Referring to FIG. 3, in order to determine the optimal set of temperature for depositing the first film, a plurality of test wafers are subject to FIG. 1A in step 1 31 The first film deposition process of the temperature processing system. The multiple wafers include the upper region, the upper region, the middle region, the lower region, and the lower region of the wafer ship. The five wafers are usually supported. The first film deposition process of the film continuously follows the second film deposition process of forming the second film without removing the test wafer from the temperature processing system. However, in this embodiment, the test wafer is already being tested. Self-temperature treatment system after forming the first film on the wafer Unloading. The first film Shen Dian process uses standard temperature for all five test wafers. The thickness of the first film formed on each unloaded test wafer is measured in step 132 by a film thickness measuring instrument, such as an empsometer. The data on the results of the membrane precipitation are sent to the optimization unit 39 shown in FIG. 1B in step 1 3. The optimization unit 39 calculates and outputs the corrected first set of temperatures in step 134. One representative The actual mode including the relationship between the temperature parameter 値 and the thickness of the grown film is stored in advance in the optimization unit 39. The optimization unit 39 uses the calculated mode. The first group of corrections that are considered to be more appropriate The temperature can be obtained from the results obtained from the film precipitation and the current first set of temperatures using this mode. Then, other test wafers are processed in step 1 35 by a calibrated first temperature using the temperature processing system shown in FIG. 1A. One set of temperature is subject to the film precipitation process. The test wafer is from the temperature after the first film has been deposited on the test wafer. The paper size is applicable to the Chinese National Standard (CNS) 8-4 specification (210X297 mm). I _____ φ Packing _____ _, 玎 _____ Φ, (Please read the precautions on the back before filling this page) -22- 490604 A7 B7 V. Description of the invention (Geophysical system unloading. The thickness of the first film deposited on each test wafer is in the step 1 36 is measured by a film thickness measuring instrument, such as elHpsometer. (Please read the precautions on the back before filling this page) The measured thickness is compared with the predetermined thickness range in step 1 37, $ Π l_5nm + -1.0% If the measured thickness is within this predetermined thickness range, the process of 'deciding the optimal first set of temperatures for depositing the first film is completed. Therefore,' the corrected first set of temperatures used for depositing the film (corrected A set of temperature trajectories) is the best first set of temperatures (a set of temperature trajectories). If the corrected thickness does not fall within the predetermined thickness range, the routine returns to step 133. Then, the result of the membrane precipitation is sent to the optimization unit 39, and the optimization unit 39 calculates another corrected first group temperature. Therefore, an optimal first set of temperatures (corrected first set of temperatures) suitable for the thickness of the precipitate having a predetermined thickness range may be finally obtained. Therefore, the optimal first set temperature of the first film suitable for precipitation to meet the required specifications can be determined by precipitating only the first film outside the film by the first film precipitation process and measuring the thickness of the precipitated first film. . Printed by the Poverty Alleviation Cooperative of the 1st Bureau of the Ministry of Economic Affairs's Smart Finance. Then, the optimal second group temperature suitable for precipitation of the second film, that is, the upper film, is determined. As shown in FIG. 4, first, the first film is formed on a test wafer supported by a plurality of temperature processing systems by using the optimal first set of temperatures determined above, and the second film deposition process continues with the first film deposition The process is performed to eliminate the need to unload the test wafer from the temperature processing system after the first film is deposited in step 14 to deposit a second film on the first film. The multiple test wafers include the upper region, upper-middle region, middle-region, lower-middle region, and five regions supported by the wafer region 13 respectively. The second film precipitation process uses standard temperatures for all five test wafers. China National Standard (CMS) A4 specification (210X297 mm) is applied to the paper size of each test wafer for the first film and the second film. -23- 490604 A7 _ B7 V. Description of the invention (after precipitation on the layer) The test wafer is unloaded from the temperature processing system. (Please read the precautions on the back before filling this page.) The thickness of the sum of the first film and the second film formed on each of the unloaded test wafers is in step 142 is measured by a film thickness measuring instrument, such as an elhpsometer. In this example, the individual thicknesses of the first film and the second film are not individually measured. The data on the results of the film precipitation are sent to FIG. 1B in step 1 43 The illustrated optimization unit 39. The optimization unit 39 calculates and outputs a corrected second set of temperatures at step 144. An actual pattern representing the relationship between the temperature-dependent parameter 値 and the thickness of the film that it grows is stored in advance In the optimization unit 39. The optimization unit 39 uses the calculated mode. The more appropriately corrected second set of temperatures considered can be obtained by using this mode from the results of the membrane precipitation and the current second set of temperatures. Data, which is essentially Similar to the procedure for determining the optimal first set of temperatures. Next, in step 145, the first and second membranes are calibrated to a second set of temperatures (a Group temperature trajectory) is continuously deposited on other test wafers. The test wafers are unloaded from the temperature processing system after the first and second films have been deposited on each test wafer. Consumption by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative seal ^ Because the thickness of the two layers of the first and second films deposited on each test wafer is measured in step 146 by a film thickness measuring instrument, such as an ellipsometer. The measured thickness is compared with step 1 47. A comparison of a predetermined thickness range, such as 4nm + -0.5%. If the measured thickness is within this predetermined thickness range, the process of determining the optimal first set of temperatures for precipitating the second film is completed. Therefore, it is used for precipitating the The second set of temperature of the film is corrected (the corrected set of this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -24-490604 A7 B7 V. The description of the invention (i temperature trajectory) is the most Best first group (A set of temperature trajectories). (Please read the notes on the back before filling this page) If the corrected thickness does not fall within the predetermined thickness range, the procedure returns to step 14 3. Then, the result of the film precipitation is sent To the optimization unit 39, and the optimization unit 39 calculates another corrected first group temperature. Therefore, it is suitable for optimizing the second group temperature of the second film having a thickness falling within a predetermined thickness range. The (corrected set of temperatures) may finally be obtained. Therefore, this embodiment achieves two layers of film suitable for the thickness (combined result of temperature treatment) suitable for nearly a set of tritium sediments falling within a predetermined thickness range and as nearly one The group 値 precipitate has a decision on the optimal first group temperature and the optimal second group temperature of the thickness (the result of the first temperature treatment) falling within a predetermined thickness range. Therefore, the thickness of the second film (the result of the second temperature treatment) can be managed. The temperature processing system shown in FIG. 1A can be used to manufacture semiconductor devices by using the best first set of temperatures and the best second set of temperatures determined to achieve the required specifications (quality) of the deposited film. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs when three of the more films are continuously deposited in layers (one after the other) and the individual thicknesses of the films cannot be measured individually, and the most The optimal set of temperatures can be determined by the aforementioned optimal set of temperature determination procedures. When three films, that is, the first, second, and third films, are deposited on the wafer, the first film deposition process that deposits the first film is performed and the optimal first set of temperatures is determined. Next, the first film precipitation process using the optimal first group temperature and the second film precipitation process using the optimal second group temperature are continuously performed and the optimal second group temperature is determined. Then, by using the best first set of warm paper sizes, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied. -25- 490604 A7 ___B7 V. Description of the invention (4 (Please read the precautions on the back before filling in this Page) of the first film precipitation process, the second film precipitation process using the optimal second set of temperature and the third film precipitation process of the Shenyang third film are continuously performed and the optimal third set of temperature is determined. The optimal set of temperatures for four or more films can be determined in the same way. When determining the optimal first set of temperatures and the optimal second set of temperatures, the test wafer processed by the temperature processing system shown in FIG. 1A The controlled temperature change will be described with reference to Figs. 5A to 6B. Figs. 5A to 5C are wafer temperature control charts that help explain the optimum first set of temperature determining procedures for determining the optimum first set of temperatures for depositing the first film. 5A shows the nominal temperature change curve representing the temperature change when the first and second films are formed on the wafer. Referring to FIG. 5A, the wafer is heated to 800 ° C, and the wafer is held at 800 ° C for several minutes. As the first temperature stabilization process, the first A film precipitation process is performed to precipitate the first film, and then a first annealing process is performed to anneal the first film. The wafer is maintained at a fixed control temperature of 800 ° C during the first temperature stabilization process. Ministry of Economic Affairs, Smart Finance Bureau B (Printed by the Industrial and Consumer Cooperative) Next, the temperature of the wafer was reduced to 760 ° C, and the wafer was maintained at 76 (TC as a second temperature stabilization process, and the second film precipitation process was performed to precipitate the second film, And then a second annealing process is performed to anneal the second film. The wafer is stabilized at a second temperature, the second film precipitation process and the second annealing process are maintained at a fixed control temperature of 76 ° C. The temperature of the wafer is at After the completion of the second annealing process, the wafer can be unloaded from the temperature processing system. When the temperatures of the first and second film deposition processes are controlled according to the nominal temperature control chart, the temperature of the first film deposition process is the highest. The first group of temperature (the nominal paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -26- 490604 A7 ____B7 _ V. The description of the invention (A · above 800 ° C)) is determined by the following procedures. (Please read the precautions on the back before filling this page.) Refer to Figure 5B for the temperature rise process, the first temperature stabilization process, the first film precipitation process, the first annealing process, and the first temperature reduction process. Use the nominal precipitation as the first set of temperatures (a set of temperature trajectories). The optimization unit 39 calculates a corrected first set of temperatures based on the data on the results of the film precipitation and another first film The first film precipitation process using the corrected first set of temperatures is used to precipitate. The steps of these first film precipitations and the first set of temperature corrections are repeated until a first film having a thickness that meets the required specifications (quality) is formed. Figure 5C The optimal first set of temperatures determined by this is displayed. As shown in FIG. 5C, the top, top, middle, middle, bottom, and bottom of the wafer ship 13 are the best group temperature in the G domain. For example, they are 8 1 0C, 80 5 ° C, 802, respectively. ° C, 800 ° C and 798 ° C. In FIG. 5C, the temperature change curve is exaggerated to make it easy to understand the difference between the optimal first set of temperatures in the upper, upper, middle, lower, middle, and lower areas of the wafer boat. The same exaggeration is applied to other graphs. Therefore, the optimal first set of temperatures suitable for precipitating a first film that meets the required specifications can be determined by precipitating only the first film outside the two films in the first film precipitation process and measuring the thickness of the precipitated first film. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figures 6A and 6B are wafer temperature control charts that help explain the process of determining the best second and best temperature of the second film. The optimal second set of temperatures for the second film (nominal 760 ° C) is determined by the following procedure. Referring to FIG. 6A, a second film precipitation process using a nominal temperature to deposit a second film is performed as a first film precipitation process using an optimal first set of temperatures. The optimization unit 39 is based on the information on the results of the film precipitation. The paper size is based on the Chinese National Standard (CNS) A4 specification (210X297 mm) ′ -27- 490604 A7 ___ B7 V. Description of the invention (凫 ( Please read the notes on the back before filling in this page) Calculate the corrected second set of temperature and the second film is precipitated by the second film precipitation process using the corrected second set of temperature. These second film precipitation and second The group temperature correction step is repeated until a second film having a thickness that meets the required specifications is formed. FIG. 6B shows the optimal second group temperature thus determined. As shown in FIG. 6B, the wafer ship 13, upper, upper, and middle, The optimal second set of temperatures for the middle, lower, middle, and lower regions, for example, are 7550 ° C, 75 8 ° C, 759 ° C, 760 ° C, and 762t. Therefore, it is suitable to be used as a group of 値 precipitation The optimal first set of temperatures for a two-layer film having a thickness falling within a predetermined thickness range (combined result of temperature treatment) and a thickness that is close to a group of osmium precipitation falling within a predetermined thickness range (result of second temperature treatment) The decision with the optimal second set of temperatures is Yes. Therefore, it is possible to manage the thickness of the second film (the result of the second temperature treatment). Another one is to determine the optimal first group temperature and the optimal second group temperature on the temperature treatment system shown in FIG. MA. The mode of controlling the temperature change of the test wafer will be described with reference to Figs. 7A to 8B. Figures 7A to 7C printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs are helpful to explain the determination of the optimal first dynamic set temperature for the precipitation of the first film Wafer temperature control chart for the optimal first dynamic group temperature determination procedure. FIG. 7A shows a nominal temperature change curve representing the temperature change when the first and second films are formed on the wafer (the object being processed). Referring to FIG. 7A, the wafer is heated, and the wafer is maintained at a temperature for several minutes as a first temperature stabilization process. A first film deposition process is performed to precipitate a first film, and then a first annealing process is performed to anneal the first film. One film. In the first film precipitation process, the temperature is gradually reduced according to time. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -28-490604 A7 B7
五、發明説明（A (請先閱讀背面之注意事項再填寫本頁) 因此，第一膜沈澱製程之第一組溫度不是固定的溫度，但 相同的是動態一組溫度依時間改變。在此，決定最佳第一 動.組溫度之程序將被解釋。第一組溫度在第一膜沈殿製 程期間依時間逐漸地降低以加熱晶圓的中央部分至相當高 的溫度且加熱晶圓的周邊部分至相當低的溫度。 這樣的溫度變化在降低各晶圓上之膜厚度分佈的散 佈’即，晶圓內膜厚度分佈，以及在降低於晶圓上形成之 膜間之厚度，即，晶圓間膜厚度分佈，之差異是有效的。 一適合的溫度階層可以以在第一膜沈澱製程期間改變一組 溫度由利用晶圓之熱傳導的比率在晶圓的周邊與中央部分 間建立。 例如，如果晶圓的中央部分與周邊部分分別被曝露於 不同膜沈澱條件之大氣，如不同來源氣體濃度的大氣，不 同的膜沈澱條件的效果可以由適當的溫度層次而補償。 經濟部智总財產局員工消费合作社印災 例如，如果一組溫度在第一膜沈澱製程期間不被降 低，於晶圓上形成之膜有如圖9A所示之厚度。如圖9A所 示，通常，晶圓的中央部分上之膜的厚度是類似於晶圓的 周邊部分上的，其也許主要地由對應於晶圓的中央與周邊 部分之區域間之來源氣體濃度之差異造成。來源氣體自晶 圓的周邊部分流向晶圓的中央部分且被消耗同時其正流向 晶圓的中央部分，且因此來源氣體濃度自晶圓的周邊部分 向晶圓的中央部分降低。因此，膜的中央部分的厚度是有 點類似膜的周邊部分的，例如，由1 nm的一小部分。下列 說明中，形成具如圖9A所示之厚度分佈之膜之溫度處理系 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -29- 490604 A7 B7 五、發明説明（全 統的特徵將被稱爲杯特徵。 因此，如圖9 B所示，最好是由，例如，數攝氏度以 晶圓的中央部分的溫度有點高於周邊部分的之方式控制晶 圓的溫度。爲此目的第一膜沈澱製程期間之溫度依時間一 點點地降低。接著，熱由傳導自晶圓的中央部分傳向晶圓 的周邊部分，且表示自晶圓的中央部分向晶圓的周邊部分 之溫度的降低之溫度層次被建立。因此，如圖9C所示，該 膜可以以很一致的厚度沈澱於晶圓上。 再參考圖7A，溫度在第一退火製程後被降低以開始 第二膜的沈澱。接著，類似地，第二穩定製程，第二膜沈 澱製程與第二退火製程被實行。在第二膜沈澱製程中，第 二組溫度在第二膜的沈澱期間依時間一點點地降低。在 此，決定最佳第二動態組溫度之程序將被解釋。在第二退 火製程的完成後，該溫度被降低且晶圓自溫度處理系統卸 下。 當第一與第二膜沈澱製程之溫度根據名義上的溫度控 制圖所控制時，第一膜沈澱製程之最佳第一動態組溫度係 由下列程序決定。 圖7B顯示加熱（溫度上升）製程，第一穩定製程， 第一膜沈澱製程，第一退火製程與第一溫度降低製程之晶 圓溫度控制圖的部位。第一膜由使用名義上的溫度當作第 一動態組溫度而沈澱。最佳化單元39在膜沈澱的結果上之 資料的基礎上計算經校正的第一動態組溫度，且接著另一 第一膜係由使用經校正的第一動態組溫度沈澱。這些第一 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) ►裝· 訂 經濟部智慧財產局員工消費合作社印製 -30- 490604 A7 _B7_ 五、發明説明（4 (請先閲讀背面之注意事項再填寫本頁) 膜沈澱與第一動態組溫度校正的步驟被重複直到符合需要 的規格之厚度的第一膜被形成。圖7C顯示因此決定之最佳 第一動態組溫度。如圖6C所示，晶圓船13的上區域支持 之晶圓之第一動態組溫度係根據溫度控制圖171所控制， 且晶圓船1 3的下區域支持之晶圓之第一動態組溫度係根據 溫度控制圖Π2所控制。控制晶圚船1 3的上中，中與下中 區域支持之晶圓之第一動態組溫度之溫度控制圖，其可以 由相同的程序決定，在圖7C中被省略。 因此，適於沈澱表示可允許的晶圓內厚度散布（差 異）範圍與可允許的晶圓間厚度散布（差異）範圍之符合 需求的品質之第一膜可以由沈澱與僅測量被連續地沈澱之 兩膜外之第一膜而決定。 圖8A與8B是助於解釋決定沈澱第二膜之最佳第二動 態組溫度之最佳第二動態組溫度決定程序的晶圓溫度控制 圖。沈澱第二膜之最佳第二動態組溫度係由下列程序決 定。 經濟部智慧財產局員工消費合作社印製 參考圖8A，使用名義上的第二動態組溫度沈澱第二 膜之第二膜沈澱製程係隨著由使用最佳第一動態組溫度之 第一膜沈澱製程而執行。最佳化單元39在膜沈澱的結果上 之資料的基礎上計算經校正的第二動態組溫度且第二膜係 由使用經校正的第二動態組溫度之第二膜沈澱製程沈澱。 這些第二膜沈澱與第二動態組溫度校正的步驟被重複直到 符合需要的規格之厚度的第二膜被形成。圖8B顯示因此決 定之最佳第二動態組溫度。如圖8B所示，晶圓船13的上 本紙張尺度適用中國國家標準（CNS )八4規格（210X297公釐） ' -31 - 490604 A7 B7 五、發明説明（^9 區域支持之晶圓之第一動態組溫度係根據溫度控制圖1 8 1 所控制，且晶圓船1 3的下區域支持之晶圓之第二動態組溫 度係根據溫度控制圖1 82所控制。控制晶圓船1 3的上中， 中與下中區域支持之晶圓之第二動態組溫度之溫度控制 圖，其可以由相同的程序決定，在圖8 B中被省略。 因此，達成適於作爲將近一組値沈澱具落在預定厚度 範圍中之厚度（溫度處理的合成結果）之兩層膜與作爲將 近一組値沈澱具落在預定厚度範圍中之厚度之第一膜， 即，下膜（第一溫度處理的結杲）且符合表示可允許的晶 圓內厚度散布（差異）範圍與可允許的晶圓間厚度散布 (差異）範圍之需求的品質之最佳第一動態組溫度與最佳 第二動態組溫度的決定是可能的。因此可以管理第二膜的 厚度（第二溫度處理的結果）。 最佳動態組溫度的使用改進，如果一組溫度不動態地 變化，當具如圖10 A所示之厚度之膜被形成於晶圓船1 3的 上區域支持之晶圓上時（圖1 )之膜，具如圖10B所示之厚 度之膜被形成於晶圓船1 3的中區域支持之晶圓上與如圖 1 0C所示之厚度之膜被形成於晶圓船1 3的幵區域支持之晶 圓上的一致性。 當反應管之膜沈澱條件間之差異爲複雜時，膜有前述 的厚度分佈。例如，當氣體透過反應管的上部分被供入反 應管且除了一或更多造成如圖9A所示之杯特徵之因素之外 該氣體逐漸地在反應管中分解以沈澱該膜時，膜有前述的 厚度分佈。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慈財產局：一貝工消費合作社印製 -32- 490604 A7 _B7_ 五、發明説明（全 (請先閱讀背面之注意事項再填寫本頁) 在這樣的狀態中，加入使晶圓的中央部分上之膜的厚 度大於晶圓的周邊部分上的之因素。這樣的因素將被稱爲 杯特徵。該附加的因素實質上不影嚮晶圓船的下區域支持 之晶圓上形成之膜的周邊部分與中央部分間之厚度差。當 額外的因素被加在圖1 A所示之溫度處理系統固有的杯特徵 上時，杯特徵在晶圓船的上區域是佔優勢的且溫度處理系 統顯出杯特徵（圖1 0 A )。在晶圓船的中區域中，杯特徵與 杯特徵彼此補償且該膜實質上有如圖1 0B所示之一致的厚 度。在晶圓船的下區域中，杯特徵是佔優勢的且溫度處理 系統顯出杯特徵（圖10C)。 自圖10A至10C所示之膜厚度分佈明顯的，當沈澱一 膜於晶圓上時，有點上升的動態組溫度被使用作晶圓船的 上區域支持之晶圓，一常數（靜態）組溫度被使用作晶圓 船的中區域支持之晶圓且有點陷落動態組溫度被使用作晶 圓船的下區域支持之晶圓以形成具一致厚度之膜。 經濟部智慈財產局工消費合作社印製 如上述，達成適於作爲將近一組値沈澱具落在預定厚 度範圍中之厚度（溫度處理的合成結果）之兩層膜與作爲 將近一組値沈澱具落在預定厚度範圍中之厚度之第一膜， 即，下膜（第一溫度處理的結果）且符合表示可允許的晶 圓內厚度散布（差異）範圍與可允許的晶圓間厚度散布 (差異）範圍之需求的品質之最佳第一動態組溫度與最佳 第二動態組溫度的決定是可能的。因此可以管理第二膜的 厚度（第二溫度處理的結果）。 不同於先前圖2至4所說明之一組溫度決定程序，對 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -33- 490604 A7 __B7 五、發明説明（土 (請先閱讀背面之注意事項再填寫本頁) 決定圖1 A所示之溫度處理系統之一組溫度將於圖11至i 3 說明。圖11至1 3決定對應於多個連續地形成兩膜之加熱 器的輸出之反應管中之最佳一組溫度之最佳一組溫度決定 程序的流程圖。該兩膜被連續地形成於雨層膜中且雨膜個 別的厚度可以被個別地測量。例如，兩膜的其中之一是氧 化膜且另--是於氧化膜上形成之氮化膜。 假設第一膜，即，下膜，的厚度需要在大約一特定値 之預定厚度範圍中，如1.5nm + -1.0%且第二膜，即，上膜， 的厚度需要在大約一特定値之預定厚度範圍中，如 2.5nm + -1.0% 0 爲符合這樣的需求，沈澱第一膜，即，下膜，之最佳 一組溫度係在圖11所示之步驟221中決定，且接著沈澱第 二膜，即，上膜，之最佳一組溫度係在步驟2 2 2中決定。 經濟部智慧財產局員工消費合作社印製 參考圖1 2，爲決定沈澱第一膜之最佳第一組溫度，多 個測試晶圓在步驟2 3 1中被連續地受制於圖1 A所示之溫度 處理系統之第一與第二膜沈澱製程。多個晶圓分別包括晶 圓船13的上區域，上中區域，中區域，下中區域以及下區 域支持之五晶圓。測試晶圓係在第一與第二膜沈澱製程的 完成後自溫度處理系統卸下。第一與第二膜沈澱製程對所 有五測試晶圓使用標準溫度。 於各經卸下的測試晶圓上形成之第一膜的厚度在步驟 2 3 2中係由膜厚度測量儀器測量，如e丨1 i p s 〇 m e t e r。膜沈殿 的結果上之資料在步驟233中係送至圖1 B所示之最佳化單 元39。最佳化單元39在步驟234中計算且輸出經校正的一 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公董) ' -34- 490604 A7 ______B7_ _ 五、發明説明（4 組溫度。 (請先閲讀背面之注意事項再填寫本頁) 一代表包括溫度之參數的値與其成長之膜厚度間之關 係之實際模式預先被儲存於最佳化單元39中。最佳化單元 39使用該計算之模式。所考慮更適當之經校正的一組溫度 可以由使用該模式得自膜沈澱與目前一組溫度的結果上之 資料，其實質上類似於先前圖3所說明的。 接著，其它測試晶圓在步驟23 5中由使用圖1A所示 之溫度處理系統之經校正的一組溫度受制於第一與第二膜 沈澱製程。測試晶圓係在膜沈澱製程的完成後自溫度處理 系統卸下。沈澱於各測試晶圓之第一膜的厚度在步驟236 中係由膜厚度測量儀器測量，如ellipsometer。 經測量的厚度在步驟237被與預定的厚度範圍比較， 如1.5nm + -1.0%。如果經測量的厚度是_在此預定的厚度範圍 中’決定沈澱第一膜之最佳第一組溫度之程序被完成。因 此，用作沈澱該膜之經校正的第一組溫度（經校正的一組 溫度軌線）是最佳第一組溫度（一組溫度軌線）。 經濟部智慧財產局g(工消费合作社印製 如果經校正的厚度沒落在預定的厚度範圍中，該程序 回至步驟2 3 3。接著，膜沈澱的結果（經測量的厚度）被送 至最佳化單元39，且最佳化單元39計算另一經校正的一組 溫度。因此，適合作沈澱具符合需要的品質之品質之第一 膜之最佳第一組溫度（經校正的第一組溫度）也許最後被 獲得。 因此，適合作沈澱符合需要的規格之第一膜之最佳第 一組溫度可以由沈澱第一膜與第二膜且測量經沈澱的第一 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -35- 490604 A7 ____B7 五、發明説明（4 膜的厚度而決定。 (請先間讀背面之注意事項再填寫本頁) 隨後，適合作沈澱第二膜，即，上膜，之最佳第二組 溫度被決定。如圖1 3所示，首先，第一膜係由使用如上決 定之最佳第一組溫度形成於多個溫度處理系統支持之測試 晶圓上，且第二膜沈澱製程續於第一膜沈澱製程被實行以 在步驟24 1中沈澱第二膜於第一膜上。多個測試晶圓分別 包括晶圓船1 3的上區域，上中區域，中區域，下中區域以 及下區域支持之五區域。第二膜沈澱製程對所有五測試晶 圓使用標準溫度。在第一膜與第二膜已經在各測試晶圓之 層上沈澱後’測試晶圚係自溫度處理系統卸下。 於各經卸下的測試晶圓上形成之第一膜與第二膜的和 的厚度在步驟242中由膜厚度測量儀器測量，如 ellipsometer。第二膜沈澱的結果上之資料在步驟243中被 送至圖1B所示之最佳化單元39。最佳化單元39在步驟 244計算且輸出經校正的第二組溫度。 經濟部智慧財產局a(工消費合作社印製 一代表包括溫度之參數的値與其成長之膜厚度間之關 係之實際模式預先被儲存於最佳化單元39中。最佳化單元 39使用該計算之模式。所考慮更適當之經校正的第二組溫 度可以由使用該模式得自膜沈澱與目前第二組溫度的結果 上之資料，其實質上類似於決定最佳第一組溫度之程序。 接著，第一與第二膜在步驟245中係由使用由圖1 A 所示之溫度處理系統沈澱第二膜之經校正的第二組溫度 (一組溫度軌線）連續地沈澱於其它測試晶圓上。該測試 晶圓係在第一與第二膜已於各測試晶圓上沈澱後自溫度處 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -36- 490604 A7 ______B7 五、發明説明（4 理系統卸下。 (請先閱讀背面之注意事項再填寫本頁) 於各測試晶圓上沈澱之第二膜的厚度在步驟246中係 由膜厚度測量儀器測量，如 ellipsometer 0 經測量的厚度在步驟247被與預定的厚度範圍比較， 如2·5ηιη + -1.〇%。如果經測量的厚度是在此預定的厚度範圍 中’決定沈澱第二膜之最佳第一組溫度之程序被完成。因 此’用作沈澱第二膜之經校正的第二組溫度（經校正的一 組溫度軌線）是最佳第二組溫度（一組溫度軌線）。 如果經校正的厚度沒落在預定的厚度範圍中，該程序 回至步驟243。接著，膜沈澱的結果被送至最佳化單元 39，且最佳化單元39計算另一經校正的第二組溫度。因 此，適合作沈澱具落在預定厚度範圍中之厚度之第二膜之 最佳第二組溫度（經校正的一組溫度）也許最後被獲得。 經濟部智慧財產局貞工消費合作社印^ 因此，此實施例達成適合作爲將近一組値沈澱具落在 預定晶圓間厚度分佈範圍中之厚度（第一溫度處理的結 杲）之第一膜與作爲將近一組値沈澱具落在預定晶圓間厚 度分佈範圍中之厚度（第二溫度處理的結果）之最佳第一 組溫度與最佳第二組溫度的決定。 因此，前面的第一膜沈澱製程之最佳第一組溫度首先 被決定，且接著第二膜沈澱製程之最佳第二組溫度被決 定。所以，第一膜沈澱製程之最佳第一組溫度不需任何重 調整，且因此對應於多個加熱器的輸出之反應管的內部之 最佳一組溫度可以被有效地決定。 第一與第二組溫度也許在對應膜的沈澱期間依時間改 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -37- 490604 A7 __ B7_ 五、發明説明（3)5 變之動態組溫度。第一與第二組溫度也許在對竭膜的沈澱 期間以不同區域之變化的不同模式而改變。 (請先閱讀背面之注意事項再填寫本頁) 順便一提，圖1 A所示之溫度處理系統由使用因此決 定的一組溫度可達成能夠沈澱符合需求厚度條件之膜之半 導體裝置製造製程。如圖14所示，圖1A所示之溫度處理 系統在步驟25 1中由使用最佳第一組溫度形成第一膜，且 在步驟25 2中續於第一膜的沈澱由使用最佳第二組溫度形 成第二膜。圖14是顯示由圖1 A所示之溫度處理系統連續 地形成膜之程序之流程圖。 先前於圖5A至6B所說明之最佳一組溫度的決定的範 例將就實際半導體裝置製造製程被具體地說明。在此例 中，半導體裝置製造製程是閘氧化膜沈澱製程。 經濟部智慧財產局工消費合作社印製 通常，閘氧化膜形成製程意爲由熱氧化形成一氧化膜 於半導體基底上之製程。多晶矽的閘電極層被形成於氧化 膜上（絕緣膜）。例如，硼（B )被注入多晶矽的閘電極層 以加強閘電極層的電子傳導性。由於裝置最小化與整合的 規模最近的進展，閘氧化膜的厚度已經日益地降低。所 以，除非發生一些測量由稍後執行之溫度處理製程造成注 入閘電極之硼擴散入閘氧化膜或滲透入半導體基底是可能 的。這樣硼的滲透或擴散也許破壞裝置必要的特徵。 已知修改氧化膜以形成氮氧化膜之方法在避免硼的滲 透或擴散是有效的。一包括這樣修改之製程之連續的溫度 處理製程將被說明。 第一溫度處理製程是在蒸氣中實行之濕熱氧化製程。 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X；297公釐） — ' -38- 490604 A7 _；___B7_ 五、發明説明（▲ (請先閱讀背面之注意事項再填寫本頁) 第二溫度處理製程是在N 0大氣中實行之氧化膜修改製程 (氮氧化製程）。熱氧化製程之晶圓船之個別的區域之最 佳一組溫度與氧化膜修改製程之晶圓船之個別區域之最佳 一組溫度被浃定。晶圓船被分成四區域。 將說明熱氧化膜形成製程與氧化膜修改製程被連續地 實行且期待的厚度爲1.5nm之比較的範例。製程條件包括 氣體的氣壓，處理時間與氣體的流率，且除溫度外是固定 的。晶圓船的四區域之適合的一組溫度，即，晶圓船的 上，上中，下中，以及下區域，由重複由連續製程與一組 溫度的校正形成之膜的厚度測量而決定。 經濟部智慧財產局員工消费合作社印¾ 決定爲四區域之一組溫度分別是85 5 °C，8 5 5 °C，840 °(：與83(TC。由使用那些組溫度於晶圓船上支持之晶圓上形 成之閘氧化膜的平均厚度是1.5 59nm，且晶圓間厚度散佈 (差異）的範圍是—0.65%。膜的氮含量以原子（原子％ ) 計是在0.91至1.25%的範圍（以在晶圓船的上區域之晶圓 上形成之膜之原子計0.91%且以在晶圓船的下區域之晶圓上 形成之膜之原子計1.25% )。膜的尖峰氮含量係由SIMS (次離子質量光譜學）測量。 連續地實行熱氧化膜形成製程與氧化膜修改製程之比 較的範例能夠以均勻的厚度形成膜於晶圓船上支持之晶圓 上，但膜有散佈在大約+-16%寬廣的範圍之不同的氮含量。 因此，比較的範例不能形成同質的氮氧化膜。 以下將於圖5A至6B說明先前說明之最佳化的應用的 結果。首先，熱氧化製程被最佳化。由熱氧化製程形成之 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨〇><297公趁） -39- 經濟部智慧財產局S工消費合作社印¾ 490604 A7 ___ B7 五、發明説明（士 膜期望的厚度是1.65nm ’且製程條件包括氣體的氣壓，處 理時間與氣體的流率，且除溫度外是固定的。因此形成之 膜的厚度被測量，且四區域，即晶圓船的上，上中，下中 與下區域，之適合的一組溫度係由前述程序決定。 因此決定之四區域之—組溫度分別是805 °C，801 °C， 799°C與796t。於晶圓船上支持之晶圓上形成之熱氧化膜 的平均厚度是1.667nm，且晶圓間厚度散佈（差異）的範圍 是+-0.47%。除了溫度外之製程條件是：H2的流率： 0.4sim，Ch的流率：0.4slm，N2的流率：30slm，氧化時 間：40s以及製程壓力：大氣壓力。 使用預定的一組溫度之熱氧化製程是續於氧化膜修改 製程，其中製程條件包括氣體的氣壓，處理時間與氣體的 流率，且除溫度外是固定的。經修改的膜的厚度被測量， 且晶圓船的四區域，即，上，上中，下中與下區域，之適 合的一組溫度係由前述程序決定。經修改的膜的期望厚度 是1.8 nm，其在氧化膜修改製程在修改1,65 nm厚度的氧化 膜是非常有效的。在氧化膜修改製程中，使用作修改之N〇 氣體所含之氮被擴散入氧化膜且N 0氣體所含之氧增加氧化 膜的厚度。順便一提，除了溫度外之製程條件是：NO的流 率·· 1 s 1 m，處理時間：3分鐘以及製程壓力：1 kPa。 使用於氧化膜修改製程之晶圓船的四區域，即，上， 上中，下中與下區域之一組溫度分別是848°C，8 5 0。(：，851 °C與8 5 2 °C。於晶圓船上支持之晶圓上形成之經修改的氧化 膜的平均厚度是1.762nm，且晶圓間厚度散佈的範圍是 ^紙張尺度適用中國國家標率（CNS ) A4規格（210X29?公釐) 一 一 - -40- (請先閱讀背面之注意事項再填寫本頁) >裝· 訂 490604 經濟部智慧財產局員工消費合作社印製 A7 _____ B7____五、發明説明（如 + -0.64%。經修改的氧化膜的氮含量以原子（原子％ )計是 在1.05至1.15%的範圍（以在晶圓船的上區域之晶圓上形 成之膜之原子計1.05%且以在晶圓船的下區域之晶圓上形成 之膜之原子計1.15%)。膜的尖峰氮含量係甶SIMS測量。 此實施例連續地實行熱氧化膜形成製程與氧化膜修改 製程且能夠以均勻的厚度形成膜於晶圓船支持之晶圓上。 膜的氮含量的散佈的範圍大約是+-4.5%，其較由比較範例 形成之膜的窄。也就是，同質的氮氧化膜可以被形成於晶 圓上。 此範例使用經修改的膜的經測量的厚度當作氧化膜修 改製程的經測量的結果。經修改的膜的厚度依熱氧化形成 製程（第一製程）與氧化膜修改製程（第二製程）而定， 且僅第二製程的結果不被測量作爲第二製程的最佳化。也 就是’經修改的膜的厚度，其爲第一與第二製程的結果， 被測量作爲第二製程的最佳化。因此，第二製程被適當地 吕理’其爲本發明的特性。圖1 5對比地顯不實施例與比較 的範例。圖1 5是顯示本發明的實施例中之閘氧化膜沈澱製 程的元件與相對範例之閘氧化膜沈澱製程的元件之表。 (請先閱讀背面之注意事項再填寫本頁) ▼裝- 訂 本紙張尺度適用中國國家榡準（CNS )八4規格（21〇χ 297公釐） -41 -V. Description of the invention (A (Please read the precautions on the back before filling this page) Therefore, the first set of temperature in the first film precipitation process is not a fixed temperature, but the same is that the dynamic set of temperature changes over time. Here The process of determining the optimal first movement. The temperature of the group will be explained. The temperature of the first group is gradually reduced over time during the first film Shen Dian process to heat the central part of the wafer to a relatively high temperature and heat the periphery of the wafer. Partial to quite low temperature. Such a temperature change reduces the spread of the film thickness distribution on each wafer ', that is, the inner film thickness distribution of the wafer, and reduces the thickness between the films formed on the wafer, that is, the crystal The difference in film thickness distribution between circles is effective. A suitable temperature hierarchy can be established between the periphery and the central portion of the wafer by changing the set of temperatures during the first film deposition process by using the ratio of heat transfer from the wafer. For example If the central part and the peripheral part of the wafer are respectively exposed to the atmosphere of different film deposition conditions, such as the atmosphere of different source gas concentrations, the effect of different film deposition conditions It can be compensated by the appropriate temperature level. For example, if a group of temperatures is not lowered during the first film deposition process, the film formed on the wafer has the following structure, as shown in Figure 9A: As shown in FIG. 9A, in general, the thickness of the film on the central portion of the wafer is similar to that on the peripheral portion of the wafer, which may be mainly derived from the source corresponding to the area between the center of the wafer and the peripheral portion. The difference in gas concentration is caused. The source gas flows from the peripheral portion of the wafer to the central portion of the wafer and is consumed while it is flowing to the central portion of the wafer, and therefore the source gas concentration flows from the peripheral portion of the wafer to the central portion of the wafer. Therefore, the thickness of the central part of the film is somewhat similar to the peripheral part of the film, for example, a small portion of 1 nm. In the following description, the temperature treatment system for forming a film having a thickness distribution as shown in FIG. 9A The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -29- 490604 A7 B7 V. Description of the invention (The feature of the whole system will be called the cup feature. Therefore As shown in FIG. 9B, it is preferable to control the temperature of the wafer by, for example, a few degrees Celsius so that the temperature of the central portion of the wafer is somewhat higher than the peripheral portion. The temperature during the first film precipitation process for this purpose The temperature gradually decreases from time to time. Next, heat is transferred from the central portion of the wafer to the peripheral portion of the wafer, and a temperature level indicating a decrease in temperature from the central portion of the wafer to the peripheral portion of the wafer is established. Therefore, as shown in FIG. 9C, the film can be deposited on the wafer with a very uniform thickness. Referring again to FIG. 7A, the temperature is reduced after the first annealing process to start the precipitation of the second film. Similarly, the first The two stable processes, the second film precipitation process and the second annealing process are implemented. In the second film precipitation process, the temperature of the second group is gradually decreased in time during the precipitation of the second film. Here, the optimal first temperature is determined. The procedure for the two dynamic group temperatures will be explained. After the second annealing process is completed, the temperature is reduced and the wafer is removed from the temperature processing system. When the temperatures of the first and second membrane precipitation processes are controlled according to a nominal temperature control chart, the optimal first dynamic set temperature of the first membrane precipitation process is determined by the following procedure. Fig. 7B shows a part of the crystal circle temperature control chart of the heating (temperature rising) process, the first stable process, the first film precipitation process, the first annealing process, and the first temperature decreasing process. The first membrane is precipitated by using the nominal temperature as the first dynamic set temperature. The optimization unit 39 calculates the corrected first dynamic group temperature based on the data on the results of the film precipitation, and then another first film is precipitated by using the corrected first dynamic group temperature. These first paper sizes are in accordance with Chinese National Standard (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling out this page) ► Binding and Printing Printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economic Affairs -30- 490604 A7 _B7_ V. Description of the invention (4 (Please read the precautions on the back before filling out this page) The steps of film precipitation and temperature correction of the first dynamic group are repeated until the first film with a thickness that meets the required specifications is formed. Figure 7C shows the optimal first dynamic group temperature thus determined. As shown in FIG. 6C, the first dynamic group temperature of the wafer supported by the upper region of the wafer boat 13 is controlled according to the temperature control chart 171, and the wafer boat 1 The temperature of the first dynamic group of wafers supported in the lower region of 3 is controlled according to the temperature control chart Π2. The temperature of the first dynamic group of wafers supported by the upper, middle, and lower middle regions of the crystal boat 13 is controlled. The control chart, which can be determined by the same procedure, is omitted in FIG. 7C. Therefore, suitable for precipitation indicates the range of allowable thickness spread (difference) within the wafer and the range of allowable thickness spread (difference) between wafers. The first film that meets the required quality can be determined by Shendian and only measuring the first film outside the two films that are continuously precipitated. Figures 8A and 8B are helpful to explain the determination of the best second dynamic of the second film precipitation. Wafer temperature control chart for the optimal second dynamic group temperature determining procedure of the group temperature. The optimal second dynamic group temperature for depositing the second film is determined by the following procedure. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics, refer to Figure 8A The second film precipitation process using the nominal second dynamic group temperature to precipitate the second film is performed as the first film precipitation process using the optimal first dynamic group temperature. The optimization unit 39 The corrected second dynamic group temperature is calculated based on the data on the results and the second film is precipitated by the second film precipitation process using the corrected second dynamic group temperature. These second film precipitates and the second dynamic group temperature The calibration step is repeated until a second film having a thickness that meets the required specifications is formed. FIG. 8B shows the optimal second dynamic group temperature thus determined. As shown in FIG. 8B, the upper paper ruler of the wafer ship 13 Applicable to China National Standards (CNS) 8-4 specifications (210X297 mm) '-31-490604 A7 B7 V. Description of the invention (^ 9 The first dynamic group temperature of the wafer supported by the area is controlled according to the temperature control chart 1 8 1 And the second dynamic group temperature of the wafers supported by the lower region of the wafer boat 1 3 is controlled according to the temperature control chart 1 82. The wafers supported by the upper, middle, and lower middle regions of the wafer boat 13 are controlled. The temperature control map of the temperature of the second dynamic group, which can be determined by the same procedure, is omitted in Fig. 8B. Therefore, a thickness (temperature-treated Synthesis result) of the two films and the first film, which is a group of rhenium deposits with a thickness falling within a predetermined thickness range, that is, the lower film (the first temperature-treated crust) and is in a wafer that indicates allowable It is possible to determine the optimal first dynamic group temperature and the optimal second dynamic group temperature for the required quality of the thickness spread (difference) range and the allowable wafer thickness spread (difference) range. It is therefore possible to manage the thickness of the second film (the result of the second temperature treatment). The use of the optimal dynamic group temperature is improved. If the group temperature does not change dynamically, when a film with a thickness as shown in FIG. 10A is formed on a wafer supported by the upper area of the wafer boat 13 (Figure 1) ), A film having a thickness as shown in FIG. 10B is formed on a wafer supported by the middle region of the wafer ship 13 and a film having a thickness as shown in FIG. 10C is formed on the wafer ship 13幵 Regionally supported wafers for consistency. When the difference between the film deposition conditions of the reaction tube is complicated, the film has the aforementioned thickness distribution. For example, when a gas is supplied to the reaction tube through the upper part of the reaction tube and the gas is gradually decomposed in the reaction tube to precipitate the film in addition to one or more factors that cause the characteristics of the cup shown in FIG. 9A, the film There is the aforementioned thickness distribution. This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the notes on the back before filling this page) Ordered by the Intellectual Property Bureau of the Ministry of Economic Affairs: Printed by Yibeigong Cooperative-32- 490604 A7 _B7_ 5. Description of the invention (full (please read the precautions on the back before filling this page) In this state, add the factor that makes the thickness of the film on the central part of the wafer larger than the peripheral part of the wafer. Such a factor will be referred to as a cup characteristic. This additional factor does not substantially affect the thickness difference between the peripheral portion and the central portion of the film formed on the wafer supported on the lower region of the wafer boat. When additional factors are added In the cup characteristics inherent in the temperature processing system shown in FIG. 1A, the cup characteristics are dominant in the upper area of the wafer ship and the temperature processing system shows the cup characteristics (Figure 10A). In the middle region, the cup feature and the cup feature compensate each other and the film has substantially the same thickness as shown in FIG. 10B. In the lower region of the wafer boat, the cup feature is dominant and the temperature processing system shows the cup feature (Figure 10C). The film thickness distribution shown in Figs. 10A to 10C is obvious. When a film is deposited on the wafer, the dynamic group temperature that is slightly increased is used as the wafer supported by the upper area of the wafer ship. A constant (static) group temperature Wafers that are used as wafers supported in the middle area of the wafer ship and have a slight settled dynamic group temperature are used as wafers that are supported in the lower area of the wafer ship to form a film with a consistent thickness. As described above, the two-layer film that is suitable for the thickness (combined result of temperature treatment) that falls within a predetermined thickness range of a group of plutonium deposits and the thickness that falls within a predetermined thickness range that is a set of plutonium deposits The first film, that is, the lower film (the result of the first temperature treatment) and the highest quality that meets the requirements indicating the allowable range of thickness spread (difference) within the wafer and the allowable range of thickness spread (difference) between wafers. The determination of the best first dynamic group temperature and the best second dynamic group temperature is possible. Therefore, the thickness of the second film (the result of the second temperature treatment) can be managed. Different from the previous description of FIGS. 2 to 4 One set of temperature determination procedures, the Chinese national standard (CNS) A4 specifications (210X297 mm) -33- 490604 A7 __B7 are applied to this paper size V. Description of the invention (soil (please read the precautions on the back before filling this page) Decision The temperature of one group of the temperature processing system shown in Fig. 1A will be explained in Figs. 11 to i. Figs. 11 to 13 determine the best one of the reaction tubes corresponding to the output of a heater that continuously forms two films. Flow chart of the best set of temperature determining program. The two films are continuously formed in the rain film and the individual thickness of the rain film can be measured individually. For example, one of the two films is an oxide film and Another is a nitride film formed on an oxide film. Assume that the thickness of the first film, that is, the lower film, needs to be within a predetermined thickness range of a specific thickness, such as 1.5 nm + -1.0% and the second film, That is, the thickness of the upper film needs to be within a predetermined thickness range of a specific thickness, such as 2.5nm + -1.0%. In order to meet such requirements, the optimal set of temperature for the first film, namely, the lower film, is deposited. Determined in step 221 shown in FIG. 11, and then precipitate Two films, i.e., the film, the optimal set of decisions at a temperature of 222 in a step. Printed with reference to Figure 12 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In order to determine the optimal first set temperature for depositing the first film, multiple test wafers were constrained in step 2 3 1 as shown in Figure 1 A. The first and second membrane precipitation processes of the temperature treatment system. The multiple wafers include the five wafers supported by the upper region, upper and middle region, middle region, lower middle region, and lower region of the wafer boat 13, respectively. The test wafers were unloaded from the temperature processing system after the first and second film deposition processes were completed. The first and second film deposition processes use standard temperatures for all five test wafers. The thickness of the first film formed on each of the unloaded test wafers is measured in step 2 3 2 by a film thickness measuring instrument, such as e 丨 1 i p s 0 m e t e r. The information on the result of the membrane Shen Dian is sent to the optimization unit 39 shown in FIG. 1B in step 233. The optimization unit 39 calculates and outputs a corrected paper size in step 234, which is in accordance with the Chinese National Standard (CNS) A4 specification (210X297). -34- 490604 A7 ______B7_ _ 5. Description of the invention (4 sets of temperature. (Please read the notes on the back before filling this page) An actual pattern representing the relationship between the temperature parameter 之 and the thickness of the grown film is stored in the optimization unit 39 in advance. The optimization unit 39 uses this The model of calculation. The more appropriate corrected set of temperatures considered can be derived from the use of this model to obtain information from the results of membrane precipitation and the current set of temperatures, which are substantially similar to those previously described in Figure 3. Next, other The test wafer is subjected to the first and second film deposition processes in step 23 5 using a calibrated set of temperatures using the temperature processing system shown in FIG. 1A. The test wafers are temperature-processed after the film deposition process is completed. The system is unloaded. The thickness of the first film deposited on each test wafer is measured by a film thickness measuring instrument such as an ellipsometer in step 236. The measured thickness is compared with a predetermined thickness in step 237. Degree range comparison, such as 1.5nm + -1.0%. If the measured thickness is _ within this predetermined thickness range, the process of determining the optimal first set temperature for depositing the first film is completed. Therefore, it is used as a The first corrected temperature of the membrane (corrected set of temperature trajectories) is the best first set of temperatures (set of temperature trajectories). Intellectual Property Bureau of the Ministry of Economic Affairs The thickness falls within a predetermined thickness range, and the program returns to step 2 3 3. Then, the result of the film precipitation (measured thickness) is sent to the optimization unit 39, and the optimization unit 39 calculates another corrected A set of temperatures. Therefore, the best first set of temperatures (corrected first set of temperatures) suitable for depositing a first film of a quality that meets the needs may be finally obtained. Therefore, suitable for precipitation to meet the required specifications The best first set of temperature of the first film can be measured by Shendian's first film and the second film. The first paper size after precipitation is applicable to China National Standard (CNS) A4 specification (210X297 mm) -35- 490604 A7 ____B7 Five, Instructions (4 film thickness is determined. (Please read the notes on the back first and then fill out this page) Then, the optimal second group temperature suitable for precipitation of the second film, that is, the upper film, is determined. As shown in FIG. 1, first, the first film is formed on a test wafer supported by multiple temperature processing systems by using the optimal first set of temperatures determined above, and the second film deposition process is continued from the first film deposition process. It is performed to precipitate the second film on the first film in step 24 1. The plurality of test wafers include the upper region, the upper middle region, the middle region, the lower middle region, and the five regions supported by the wafer ship 13 respectively. The second film deposition process uses standard temperatures for all five test wafers. After the first film and the second film have been deposited on the layers of each test wafer, the test crystal is removed from the temperature processing system. The thickness of the sum of the first film and the second film formed on each of the unloaded test wafers is measured in step 242 by a film thickness measuring instrument, such as an ellipsometer. The data on the result of the second film precipitation is sent to the optimization unit 39 shown in Fig. 1B in step 243. The optimization unit 39 calculates and outputs a corrected second set of temperatures in step 244. The Intellectual Property Bureau of the Ministry of Economic Affairs a (industrial and consumer cooperatives prints an actual model representing the relationship between 値, which is a parameter including temperature, and its growing film thickness, and is stored in advance in the optimization unit 39. The optimization unit 39 uses this calculation The more appropriate corrected second set of temperatures considered can be obtained by using this model from the results of membrane precipitation and the current second set of temperatures, which is essentially similar to the procedure for determining the optimal first set of temperatures Next, in step 245, the first and second films are continuously deposited in the other by using a corrected second set of temperatures (a set of temperature trajectories) of the second film deposited by the temperature processing system shown in FIG. 1A. On the test wafer. The test wafer is from the temperature after the first and second films have precipitated on each test wafer. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -36- 490604 A7 ______B7 V. Description of the invention (Removal of the 4 physical system. (Please read the precautions on the back before filling this page) The thickness of the second film deposited on each test wafer is measured by a film thickness measuring instrument in step 246 For example, the measured thickness of ellipsometer 0 is compared with the predetermined thickness range at step 247, such as 2.5 · ηη + -1.0%. If the measured thickness is within this predetermined thickness range, 'determining the precipitation of the second film The procedure for the optimal first set of temperatures is completed. Therefore the 'corrected second set of temperatures (corrected set of temperature trajectories) used to precipitate the second film is the optimal second set of temperatures (set of temperature trajectories) ). If the corrected thickness does not fall within the predetermined thickness range, the program returns to step 243. Then, the result of the film precipitation is sent to the optimization unit 39, and the optimization unit 39 calculates another corrected second Group temperature. Therefore, the optimal second group temperature (corrected group temperature) suitable for depositing a second film with a thickness falling within a predetermined thickness range may be finally obtained. Zhengong Consumer Cooperative, Bureau of Intellectual Property, Ministry of Economic Affairs Therefore, in this embodiment, the first film suitable as the thickness (the temperature of the first temperature treatment) of the first group of plutonium deposition tools falling in a predetermined inter-wafer thickness distribution range and the first group of plutonium precipitation devices are achieved. The determination of the optimal first group temperature and the optimal second group temperature of the thickness (the result of the second temperature treatment) in the predetermined wafer-to-wafer thickness distribution range. Therefore, the optimal first The group temperature is determined first, and then the optimal second group temperature of the second film precipitation process is determined. Therefore, the optimal first group temperature of the first film precipitation process does not require any readjustment, and therefore corresponds to multiple heating The optimal set of temperature inside the reaction tube of the reactor output can be effectively determined. The first and second sets of temperature may be changed in time during the precipitation of the corresponding film. The paper size applies the Chinese National Standard (CNS) Α4 specification ( 210X297 mm) -37- 490604 A7 __ B7_ V. Description of the invention (3) 5 Change the dynamic group temperature. The first and second sets of temperatures may change in different patterns of changes in different regions during the precipitation of the exhausted film. (Please read the precautions on the back before filling this page.) By the way, the temperature processing system shown in Figure 1A uses a set of temperatures determined to achieve a semiconductor device manufacturing process that can deposit a film that meets the required thickness conditions. As shown in FIG. 14, in the temperature processing system shown in FIG. 1A, a first film is formed by using the optimal first group temperature in step 251, and the precipitation continued from the first film in step 25 2 is performed by using the best first temperature. Two sets of temperatures form a second film. Fig. 14 is a flowchart showing a procedure for continuously forming a film by the temperature processing system shown in Fig. 1A. An example of the determination of the optimal set of temperatures previously described in Figs. 5A to 6B will be specifically described in terms of the actual semiconductor device manufacturing process. In this example, the semiconductor device manufacturing process is a gate oxide film deposition process. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Industrial and Consumer Cooperatives Generally, the gate oxide film formation process means a process of forming an oxide film on a semiconductor substrate by thermal oxidation. The gate electrode layer of polycrystalline silicon is formed on an oxide film (insulating film). For example, boron (B) is injected into the gate electrode layer of polycrystalline silicon to enhance the electron conductivity of the gate electrode layer. Due to recent advances in the scale of device minimization and integration, the thickness of gate oxide films has been increasingly reduced. Therefore, unless some measurement occurs that the boron injected into the gate electrode is diffused into the gate oxide film or penetrated into the semiconductor substrate by a temperature processing process performed later. Such penetration or diffusion of boron may destroy necessary features of the device. It is known that the method of modifying the oxide film to form a oxynitride film is effective in avoiding penetration or diffusion of boron. A continuous temperature treatment process including such a modified process will be explained. The first temperature treatment process is a wet thermal oxidation process performed in steam. This paper size applies Chinese National Standard (CNS) A4 specification (21〇X; 297mm) — '-38- 490604 A7 _; ___B7_ V. Description of the invention (▲ (Please read the precautions on the back before filling this page) The second temperature treatment process is an oxide film modification process (nitrogen oxidation process) carried out in the atmosphere of N 0. The optimal set of temperature and the temperature of the oxide film modification process for the individual areas of the wafer ship in the thermal oxidation process The optimal set of temperatures for individual areas is determined. The wafer boat is divided into four areas. An example of a comparison between the thermal oxide film formation process and the oxide film modification process that are continuously performed and the expected thickness is 1.5 nm. Process conditions Including gas pressure, processing time and gas flow rate, and is fixed except temperature. A suitable set of temperatures for the four areas of the wafer ship, that is, the upper, upper, middle, lower middle, and lower of the wafer ship The area is determined by repeating the thickness measurement of the film formed by a continuous process and a set of temperature corrections. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ¾ It is determined that the temperature of one of the four areas is 85 5 ° C, 8 5 5C, 840 ° (: and 83 (TC.) The average thickness of the gate oxide film formed on the wafers supported on the wafer ship using those set temperatures is 1.5 to 59 nm, and the range of thickness dispersion (difference) between wafers is- 0.65%. The nitrogen content of the film is in the range of 0.91 to 1.25% in terms of atoms (atomic%) (0.91% based on the atoms of the film formed on the wafer in the upper region of the wafer boat and in the wafer boat). The atomic weight of the film formed on the wafer in the lower area is 1.25%.) The peak nitrogen content of the film is measured by SIMS (Sub-Ion Mass Spectroscopy). Example of the continuous implementation of a thermal oxide film formation process and an oxide film modification process The film can be formed on a wafer supported on a wafer ship with a uniform thickness, but the film has different nitrogen contents spread over a wide range of approximately + -16%. Therefore, the comparative example cannot form a homogeneous nitrogen oxide film. The following The results of the optimized application previously explained will be explained in FIGS. 5A to 6B. First, the thermal oxidation process is optimized. The paper size formed by the thermal oxidation process is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 〇 > < 297 Printed by the Ministry of Intellectual Property Bureau, S Industrial Consumer Cooperative ¾ 490604 A7 ___ B7 V. Description of the Invention (The desired thickness of the film is 1.65nm ', and the process conditions include gas pressure, processing time and gas flow rate, and it is fixed except temperature Therefore, the thickness of the formed film is measured, and the four regions, that is, the upper, upper, middle, lower, and lower regions of the wafer ship, are suitable for a set of temperatures determined by the aforementioned procedures. Therefore, one of the four regions is determined— The group temperatures are 805 ° C, 801 ° C, 799 ° C and 796t. The average thickness of the thermal oxide film formed on the wafer supported on the wafer ship is 1.667nm, and the range of the thickness dispersion (difference) between the wafers It is + -0.47%. Process conditions other than temperature are: H2 flow rate: 0.4sim, Ch flow rate: 0.4slm, N2 flow rate: 30slm, oxidation time: 40s, and process pressure: atmospheric pressure. The thermal oxidation process using a predetermined set of temperatures is continued from the oxide film modification process, where the process conditions include gas pressure, processing time and gas flow rate, and are fixed except for temperature. The thickness of the modified film is measured and the appropriate set of temperatures for the four areas of the wafer boat, namely, the upper, upper, middle, lower middle and lower areas, is determined by the aforementioned procedure. The expected thickness of the modified film is 1.8 nm, which is very effective in modifying the oxide film at a thickness of 1,65 nm. In the oxide film modification process, the nitrogen contained in the modified NO gas is diffused into the oxide film and the oxygen contained in the NO gas increases the thickness of the oxide film. By the way, the process conditions other than temperature are: NO flow rate · 1 s 1 m, processing time: 3 minutes and process pressure: 1 kPa. The four areas of the wafer ship used for the oxide film modification process, namely, the upper, upper, middle, lower middle and lower areas are respectively 848 ° C and 8 50 °. (:, 851 ° C and 8 5 2 ° C. The average thickness of the modified oxide film formed on the wafer supported on the wafer ship is 1.762nm, and the range of thickness dispersion between the wafers is ^ Paper size applies to China National Standards (CNS) A4 Specifications (210X29? Mm)--40- (Please read the notes on the back before filling out this page) > Binding · Order 490604 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _____ B7____ V. Description of the invention (such as + -0.64%. The nitrogen content of the modified oxide film is in the range of 1.05 to 1.15% in terms of atoms (atomic%) (on the wafer in the upper area of the wafer boat) 1.05% of the atom of the formed film and 1.15% of the atom of the film formed on the wafer in the lower area of the wafer boat). The peak nitrogen content of the film is measured by SIMS. This embodiment continuously performs a thermal oxidation film The formation process and the oxide film modification process can form a film on a wafer supported by a wafer boat with a uniform thickness. The nitrogen content of the film has a spread range of about + -4.5%, which is narrower than that of the film formed by the comparative example. That is, a homogeneous oxynitride film can be formed on the wafer. This example uses the measured thickness of the modified film as the measured result of the oxide film modification process. The thickness of the modified film depends on the thermal oxidation formation process (first process) and the oxide film modification process (second process) However, only the results of the second process are not measured as the optimization of the second process. That is, the thickness of the modified film, which is the result of the first and second processes, is measured as the Optimized. Therefore, the second process is appropriately adapted to the characteristics of the present invention. Fig. 15 shows a comparative example and a comparative example. Fig. 15 shows the gate oxidation in the embodiment of the present invention. Table of the components of the film deposition process and the components of the relative example of the gate oxide film deposition process. (Please read the precautions on the back before filling this page) ▼ Package-The size of the paper is applicable to China National Standards (CNS) 8-4 specifications (21〇χ 297 mm) -41-