TW488095B - Organic light emitting diode, transparent electrode substrate and manufacture method - Google Patents

Organic light emitting diode, transparent electrode substrate and manufacture method Download PDF

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Publication number
TW488095B
TW488095B TW90115175A TW90115175A TW488095B TW 488095 B TW488095 B TW 488095B TW 90115175 A TW90115175 A TW 90115175A TW 90115175 A TW90115175 A TW 90115175A TW 488095 B TW488095 B TW 488095B
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substrate
transparent electrode
scope
electrode substrate
silicon
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TW90115175A
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Chinese (zh)
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Ming-Yi Huang
Ru-Shi Liou
Liang-Long Hsu
Ming-Fa Lin
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Prodisc Technology Inc
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Abstract

This invention provides a manufacture method of the transparent electrode substrate containing organic functional groups of indium-tin-oxide-silicon on the surface. An aqueous solution of a siloxane type compound with a specific concentration is prepared, which is used to immerse an indium-tin-oxide (ITO) transparent substrate with a surface containing hydroxyl group for a specific period of time to form the transparent electrode substrate containing organic functional groups of indium-tin-oxide-silicon on the surface. This invention also provides an organic light emitting diode of the transparent electrode substrate containing organic functional groups of indium-tin-oxide-silicon on the surface.

Description

發明說明(1) 【發明背景】 發明之領g 本發明係有關於—種有機發光二極體 可加速電洞傳遞、提古一 ^ ^ ^ 特別係指一種 子有機發光:;體m件壽命與發光效能之高分 基板及其製造方;4;:係;==:種透明電極 電極板與有機共軛高分子二;二^機物型之透明 及其製造方法。 子;|面結合緊岔性之透明電極基板 J1知技術之描述 1 9 9 0年’英國劍橋大學之研究群,發現聚對苯乙烯Description of the invention (1) [Background of the invention] The invention g The invention relates to an organic light emitting diode which can accelerate the hole transfer and improve the quality of a hole. In particular, it refers to a kind of organic light emitting diode: the life of the body m pieces High-resolution substrate with high luminous efficacy and its manufacturing method; 4 ;: Department; ==: A kind of transparent electrode electrode plate and organic conjugated polymer II; the transparency of the organic material and its manufacturing method. A transparent electrode substrate with surface-bound tightness J1 Description of the know-how 1 990 Research group of the University of Cambridge, England, found poly-styrene

Cp〇1【(p-—Phenylene Vlnylene ;ppv)〕之高分子材料可 二^光一極體之發光層材料,造成全世界研究有機電激 發光顯示技術之熱潮。由於有機電激發光顯示技術,除具 =現代液晶顯示器的輕薄、低耗電量與高解析度外,其本 質擁有更優越的廣視角特性、高應答速度與高明暗對^, 並具有製程簡單與成本低之優點。而且利用高分子之優異 超薄成膜的特性,可製造非常薄且柔軟之發光元件。相信 未來必能實現可捲曲顯示器之夢想。 高分子發光二極體是以高分子為其發光層(發光部)之 材料’一般通稱為PLED (polymer light emitting di〇de《 ),習知之高分子發光二極體(有機發光二極體)係主要包 含一基板、一透明電極層、一發光部及一金屬電極層,其 中該透明電極層、發光部及金屬電極層係依序形成於該基 板之上。一般而言,該透明電極層係由銦錫氧(I τ 0 )電極The polymer material of Cp〇1 [(p-—Phenylene Vlnylene; pv)] can be used as the material of the light-emitting layer of the bipolar monopolar body, which has caused a boom in the research of organic electroluminescent display technology worldwide. Due to the organic electroluminescence display technology, in addition to the thin and light, low power consumption and high resolution of modern LCD displays, its essence has superior wide viewing angle characteristics, high response speed and high brightness and darkness ^, and has a simple process. And the advantages of low cost. In addition, the excellent ultra-thin film-forming properties of polymers can be used to produce very thin and flexible light-emitting devices. I believe that the dream of rollable displays will be realized in the future. Polymer light-emitting diodes are based on a polymer whose light-emitting layer (light-emitting portion) is generally called PLED (polymer light emitting diode), and a conventional polymer light-emitting diode (organic light-emitting diode). The system mainly includes a substrate, a transparent electrode layer, a light-emitting portion, and a metal electrode layer. The transparent electrode layer, the light-emitting portion, and the metal electrode layer are sequentially formed on the substrate. Generally speaking, the transparent electrode layer is composed of an indium tin oxide (I τ 0) electrode.

第4頁 五、發明說明(2) --- 層所構成,ΙΤ0係為一半透光性且具有高功函數之電4、、 入(hole-in ject ion )正極材料,屬於無機型材料、/同/主 主要發光部係主要由一有機共輛高分子所形成之發’而。 、,承上所述,一般無機化合物與有機化合物之^I。 =。因=在I T0電極基板與有機共軛高分子層接合面# 7存在著不易互溶之問題,此易造成發光特性不 ^ 如何發展新技術來改善接合面之問題,實為重要之 為解決無機物型之I T0電極基板盥發光邻之右、。 A鲕宾八工々田 見仏岙极…k尤哔之有機物型 厂軛刀子之界面之問題。一般係採用游離能 ionization potential ; ip)鮫低之導雷古八 傳導層,以降低^ A車乂低v電问刀子當作電 與發光效率。層=此障,藉以改進元件之穩定度 …、而’此方法仍有下列缺點: 之高分;t ^ :機—無機界面問題未能解決,因為新加入 界面接合問題屬於有機型物質與無機型IT0基板間仍存在 時,因有二二二,利用旋轉塗佈法成膜於I το電極基板上 的靜電吸弓I力:ί界面問題,將導致有機高分子僅以微弱 子原料於旋轉泠H1 τ〇電極基板上,進而使大部分高分 ~符鱼佈時浪費。 ( 【發明概要] 本發明之主 機界面接合門es目的在於提供一種可有效解決有機與無 本發明透明電極基板及其製造方法。 目的在於提供一種可加速電洞傳遞、提Page 4 V. Invention description (2) --- It is composed of layers, ITO is a semi-transparent and high work function electric 4, hole-injection positive electrode material, which is an inorganic material, / 同 / The main main light-emitting part is mainly formed by an organic polymer. As mentioned above, ^ I of general inorganic compounds and organic compounds. =. Because = the joint surface # 7 between the I T0 electrode substrate and the organic conjugated polymer layer has a problem that it is not easy to dissolve each other, which easily causes the light-emitting characteristics to not be improved. How to develop new technologies to improve the joint surface is really important to solve the inorganic matter. The type of I T0 electrode substrate is next to the right. A Oobinhachi Kogata See the poles ... k You Biao's organic matter The problem of the interface of the factory yoke knife. Generally, a low-conducting Leigu eight conductive layer is used to reduce the ^ A car's low-voltage electric knife as electricity and luminous efficiency. Layer = this barrier, in order to improve the stability of the device ..., and 'this method still has the following disadvantages: high scores; t ^: machine-inorganic interface problem could not be solved, because the newly added interface bonding problem belongs to organic substances and inorganic When the type ITO substrates still exist, because there are two or two, the electrostatic suction bow formed on the I το electrode substrate by the spin coating method. I force: interface problems will cause the organic polymer to rotate only with the weak material. Ling H1 τ〇 on the electrode substrate, so that most of the high score ~ Fuyu cloth waste. [Summary of the Invention] The purpose of the present invention is to provide an organic interface junction door which can effectively solve organic and non-transparent substrates of the present invention and a method for manufacturing the same. The object is to provide a method for accelerating hole transfer and improvement.

488095488095

高發光二極體壽命與發光效能之有機發光二極體。 —本發明之一特徵係在於提供一種表面具有銦錫-氧-矽 機B能基之透明電極基板及其製造方法。 銦錫 體。 本發明之另一特徵係在於提供一種包含有一表面且有 一氧-矽-有機官能基之透明電極基板的有機發光二/極 【較佳實施例之詳細說明】 、以下係依據圖式來具體說明本發明之較佳實施例。 極基板及其製造方法 · 本發明乃採用化學方法,來改善無機物型丨T〇電極基板 /、有機共軛高分子界面問題,其原理為:ΙΤ0電極基板上 2錫氧化物表面與空氣中的水分子接觸後,易帶有氫氧基 —子-於其基板之表面,故將其與含矽之烷氧型化合物(如 ^環氧丙醇丙基二甲氧基曱矽烷[3 — glycid〇xypr〇pyi (dwethoxy) methylsilane]、N—苯基氨基丙基三甲氧基 1烷从或3—(2—氨基乙基氨基)丙基三甲氧基矽烷及其類土似 乍用,則ΙΤ0基板表面之氫氧基易與含矽之烷氧基作 用,'烷氧基離去,使得氫氧基之氧與矽結合,進而形 銦錫-氧-矽之鍵結的表面改質化合物,此鍵結為一共價 鍵,為一強鍵結,因此,可將屬無機物型之IT〇電極美、 與此含石夕之化合物緊密結合。另外,此含石夕之烷氧型土化合 物的另一端為一可溶於有機物型之官能基,如環氧基、1 基及烧基等’若利用旋轉塗佈方式將有機共輛高分子成膜 488095 五、發明說明(4) =經表面改質之no電極基板上,因改質後_ 端為…容於有機物型官能I,故可非常容易地與有 機,、軛咼分子相接合。故此含矽之烷氧型化合物,如同人 的手臂’其中-端因含石夕炫氧基,故能與無機物型之】仞 電極基板結合,而另一端為含有機物型官能基,故能盘 機共耗高分子相結合’經由此交鏈作用可增加無機物型之 ΙΤ0電極基板與有機共軛高分子界面接合緊密性,進而可 加速電洞傳遞而提高元件壽命與發光效能。 以下係以3-(2 -氨基乙基氨基)丙基三甲氧基矽烷為 例’並配合圖1來具體說明本發明之透明電極基板製造方 法。 於本貫加例中’係先將沈浸基板(I τ 0電極基板)用之 含矽之烷氧塑化合物,例如,3-(2-氨基乙基氨基)丙基三 甲氧基石夕炫溶於水中,以形成一濃度為〇·〇1〜1% (v/v) 的含叾夕之炫乳型化合物水溶液。之後,再將一具有氮氧美 表面之I T 0電極基板與溶於水溶液中的含矽之烷氧型化合 物進行反應’整個反應時間為5分鐘,此時,如圖1所示, 具有氫氧基之ΙΤ0電極基板表面中的氫氧基之氧原子上的 孤電子對易攻擊含矽之烷氧型化合物之矽原子,再使;5夕原 子上的甲氧基以曱醇(CH3〇H )的方式離去,而形成二氧_ 化石夕與壞乳基石夕烧之鋼锡-氧〜石夕鍵結。此外,於該反鹿中 所產生之甲醇,由於其易溶於水溶液中,且因曱醇濃度 低,故其不易再攻擊回含矽之烷氧型化合物與氧化銦錫結 合之矽原子,所以,已形成之銦錫-氧〜矽鍵結可穩定地存Organic light-emitting diode with high light-emitting diode lifetime and light-emitting efficiency. -A feature of the present invention is to provide a transparent electrode substrate having an indium tin-oxygen-silicon functional group on its surface and a method for manufacturing the same. Indium tin body. Another feature of the present invention is to provide an organic light emitting diode / electrode including a transparent electrode substrate having a surface and an oxygen-silicon-organic functional group. [Detailed description of the preferred embodiment] The following is a detailed description based on the drawings. A preferred embodiment of the present invention. Electrode substrate and its manufacturing method · The present invention adopts chemical methods to improve the problem of inorganic type 丨 To electrode substrate / organic conjugated polymer interface, the principle is: 2 tin oxide surface on the ITO electrode substrate and the air After water molecules are in contact, they are liable to carry hydroxyl groups on the surface of their substrates, so they are mixed with silicon-containing alkoxy compounds such as ^ glycidylpropyldimethoxy 甲 silane [3 — glycid 〇xypr〇pyi (dwethoxy) methylsilane], N-phenylaminopropyltrimethoxysilane, or 3- (2-aminoethylamino) propyltrimethoxysilane and the like seem to be used at first, then ΙΤ0 The hydroxyl groups on the surface of the substrate easily interact with silicon-containing alkoxy groups, and the alkoxy groups leave, so that the oxygen of the hydroxyl groups is combined with silicon, and then the surface modification compound of the indium tin-oxygen-silicon bond is formed. This bond is a covalent bond, which is a strong bond. Therefore, it is possible to closely combine the beauty of the IT0 electrode, which is an inorganic type, with this stone-containing compound. In addition, the alkoxy-type soil compound containing this stone, The other end is a functional group that is soluble in organic matter, such as epoxy group, 1 group and alkyl group. 'If organic polymer is formed into a film by spin coating method 488095 V. Description of the invention (4) = No electrode substrate modified on the surface, because after modification, the end is… which is contained in organic functional type I, so It can be easily bonded to organic, ytterbium molecules. Therefore, silicon-containing alkoxy compounds are like the arm of a human's which contains Shi Xixuanoxy group, so it can be combined with inorganic type] 仞 electrode substrate And the other end contains organic-type functional groups, so it can be combined with a polymer-consumptive polymer. Through this cross-linking, the interface tightness between the inorganic ITO electrode substrate and the organic conjugated polymer interface can be increased, which can accelerate the electricity. Hole transfer improves device life and luminous efficacy. The following is a detailed description of the method for manufacturing a transparent electrode substrate according to the present invention by taking 3- (2-aminoethylamino) propyltrimethoxysilane as an example 'and referring to FIG. 1. In the examples, "Silicon-containing alkoxy compounds used in immersion substrates (I τ 0 electrode substrates) were first dissolved in water, for example, 3- (2-aminoethylamino) propyltrimethoxylithium. To form a concentration as 〇 · 〇1 ~ 1% (v / v) of aqueous solution containing cyanine-containing dazzling milk type compound. After that, an IT 0 electrode substrate with a nitrogen oxide surface and a silicon-containing alkoxy type dissolved in the aqueous solution The compound reacts. The entire reaction time is 5 minutes. At this time, as shown in FIG. 1, the lone electron on the oxygen oxygen atom of the hydroxyl group in the surface of the ITO electrode substrate having the hydroxyl group easily attacks the silicon-containing alkoxy type. The silicon atom of the compound is further removed; the methoxy group on the 5th atom leaves in the manner of methanol (CH3OH) to form dioxy_ Fossil and bad milk-based stone burned steel tin-oxygen ~ Shixi In addition, because the methanol produced in the anti-deer is easy to dissolve in the aqueous solution, and because of the low concentration of methanol, it is not easy to attack the silicon containing the alkoxy compound containing silicon and indium tin oxide Atoms, so the formed indium tin-oxygen ~ silicon bond can stably exist

第7頁 五、發明說明(5) 在。 錫、氧-矽鍵ί:1Γ f:'包反應之基板(也就是已形成銦 極美了凡成具有銦錫—氧-矽—有機官能基之透明電 土 此值得一提的是,於本實施例中,所 此基即疋指3-(2-氨基乙基氨基)丙基。 城 直農_發光三复^ ^ =係針對本發明之有機發光二極體來具體說明。 板11、透所明示 14。 極層12、一發光部13、及-金屬電極層f 3 f板11係可由玻璃材料或由有機塑膠材料所構成。 泫透明電極層12係形成於該基板12上,用以與一外 之::極’且其表面係具有銦錫—氧-矽-有機官能基 明其ΓΛ,該透明電極層12係利用上述本發明之透 月電極基板製造方法所製。 該發光部1 3係形成於該透明電極層丨2上,用以受激、 :光,於本發明中,該發光部13係可為一高分子有ς發光 層,例如聚乙烯咔唑(poly(N_vinylcarbazole),ρνκ 摻雜有機染料之高分子有機發光層,丨是混合聚乙烯咔唑, (poly(N-vinylcarbazole) . ρνκ )與 (2-(4-biphenylyl)-5-(4-tert-butylphenyl)l,3,4- oxadiazole; PBD)後,再摻雜有機染料(例如香豆素衍生 第8頁 五、發明說明(6) 物(coumarin 6;C6))之高分子有機發光層。 電雷=電ST系形成於該發光部13上,用以與-負 電電極連接,於本發明中,該發光部13係可由m、Μ、 二:“合金形成’或是由Mg/A1、_、Page 7 V. Description of Invention (5) Yes. Tin, oxygen-silicon bond ί: 1Γ f: 'The substrate containing the reaction (that is, indium has been formed, which is very beautiful. It becomes a transparent electro-chemical soil with indium tin-oxygen-silicon-organic functional groups. It is worth mentioning that in In this embodiment, this group means 疋 means 3- (2-aminoethylamino) propyl group. Urban direct agriculture_light-emitting triple compound ^ ^ = is specifically described for the organic light-emitting diode of the present invention. 板 11 The transparent display 14. The electrode layer 12, a light-emitting portion 13, and the metal electrode layer f 3 f plate 11 may be composed of a glass material or an organic plastic material. 泫 The transparent electrode layer 12 is formed on the substrate 12, The transparent electrode layer 12 is made by using the above-mentioned method for manufacturing a lunar electrode substrate of the present invention. The pole is provided with an indium tin-oxygen-silicon-organic functional group on its surface. The light-emitting portion 13 is formed on the transparent electrode layer 2 for excitation and light. In the present invention, the light-emitting portion 13 may be a polymer light-emitting layer, such as polyvinyl carbazole (poly (N_vinylcarbazole), ρνκ polymer organic light-emitting layer doped with organic dye, is a mixed polyvinyl carbazole, (poly (Nv inylcarbazole). ρνκ) and (2- (4-biphenylyl) -5- (4-tert-butylphenyl) l, 3,4-oxadiazole; PBD), and then doped with organic dyes (such as coumarin derivatives page 8 V. Description of the invention (6) Polymer organic light-emitting layer (coumarin 6; C6)). Lightning = electricity ST is formed on the light-emitting part 13 for connection with a negative electrical electrode. In the present invention, the The light-emitting part 13 can be composed of m, M, and two: "formed by alloy" or Mg / A1, _,

Ca/Al荨金屬層構成。 =所述’由於本發明之有機發光二極體係包含有一 表面”有銦錫-氧-矽-有機官能基之該透明電極層12,因 :匕,本發明之有機發光二極體係可容易地藉由該透明電極 層12之有機物型官能基與上述發光部13之有機共輛高分子 相接合’此外,由於本發明之有機發光二極體之透明電㈣ 層12之一端因含有矽烷氧基’故能與無機物型之17〇電極 基板結合,經由此交鏈作用可增加無機物型之ιτ〇電極基 板與有機共軛高分子界面接合緊密性,進而可加速電洞"傳 遞而提高元件壽命與發光效能。 以下,係共舉三種不同實施及一習知比較例,以說明 本舍明之有機發光二極體之功效。另外,於各實施例中, 發光部係主要採用聚乙烯咔唑(PVK )摻雜有機染料之高 分子有機發光層。 ’、 ^ (實施例1 )(以s i 1 a n e - 1表示) 首先,配置溶液1 :將lOOmg之PVK與4〇mg之PBD加入 6 · 5之mL氯仿中,再以超音波振盪2 0分鐘。接著,配置溶 液2 ·將6 m g之C6加入2 0 m L之氯仿,同樣以超音波振盈1 〇分 鐘直到顆粒完全溶解。隨後,將1 m L的溶液2加入溶液i中Ca / Al net metal layer. = Said 'Because the organic light emitting diode system of the present invention includes a surface', the transparent electrode layer 12 having indium tin-oxygen-silicon-organic functional group, because: the organic light emitting diode system of the present invention can be easily The organic-type functional group of the transparent electrode layer 12 is connected to the organic common polymer of the light-emitting portion 13 above. In addition, because one end of the transparent electrode layer 12 of the organic light-emitting diode of the present invention contains a silaneoxy group 'It can be combined with the 170 substrate of the inorganic type. Through this cross-linking, the tightness of the interface between the inorganic substrate and the organic conjugated polymer interface can be increased, which can accelerate the hole's transmission and increase the life of the device. And luminous efficacy. In the following, three different implementations and a conventional comparative example will be given to illustrate the efficacy of the organic light-emitting diode of Ben Sheming. In addition, in each embodiment, the light-emitting part mainly uses polyvinyl carbazole ( PVK) polymer organic light-emitting layer doped with organic dye. ', ^ (Example 1) (represented by si 1 ane-1) First, configure solution 1: Add 100 mg of PVK and 40 mg of PBD to 6. 5 In mL of chloroform, sonicate for another 20 minutes. Then, configure solution 2 • Add 6 mg of C6 to 20 ml of chloroform, and also sonicate with ultrasonic for 10 minutes until the particles are completely dissolved. Then, 1 ml of solution 2 was added to solution i

488095 五、發明說明(7) 配成最終比例為在7 · 5 m L的氯仿中含有P V K : P B D : C6 =1 0 0 : 40 : 6的溶液。最後以〇· 45 // L之f i 1 ter過濾之即得溶 液3。接者,將含矽之烷氧型化合物(如τ —環氧丙醇丙基488095 V. Description of the invention (7) A solution containing P V K: P B D: C6 = 0 0: 40: 6 in chloroform with a final ratio of 7.5 m L was prepared. Finally, the solution 3 was obtained by filtering with f i 1 ter of 0.45 // L. Then, silicon-containing alkoxy compounds (such as τ-glycidoxypropyl

二曱氧基甲矽烷[3-glycidoxypropyl(dimethoxy) methylsilane];以 silane-1 表示)〇.1359g 溶解於 250mL 之去離水中,將清潔好之I TO電極基板放入此溶液中5分 鐘,隨後,將基板放入1 2 0 °C烘箱中3 0分鐘。然後,將溶 液3取出3 0 0 // L滴於改質後之I TO電極基板(即,本發明之 透明電極基板)上以3 0 0 0 r · p · m ·之轉速旋轉塗佈3 0秒,使 主要發光層成膜於IT0電極基板上,再蒸鍍Ca/Al上電極,籲 即可得改質後之LED元件。 (實施例2 )(以s i 1 a n e - 2表示) 首先,配置溶液1 :將lOOmg之PVK與40mg之PBD加入 6 · 5之mL氯仿中,再以超音波振盪2 0分鐘。接著,配置溶 液2 :將6mg之Ce加入2 0mL之氯仿,同樣以超音波振盪1〇分 鐘直到顆粒完全溶解。隨後,將1 m L的溶液2加入溶液1中 配成最終比例為在7· 5mL的氯仿中含有PVK : PBD:C6 =1 0 0 : 4 0 : 6的溶液。最後以0 · 4 5 // L之f i 11 e r過濾之即得溶 液3。接者,將含矽之烷氧型化合物(如N-苯基氨基丙基 三甲氧基石夕烧[N-phenylamino propyl _ trimethoxy silane];以 silane-2表示)〇.1468g 溶解於 2 5 OmL之去離水中,將清潔好之I TO電極基板放入此溶液中 5分鐘,隨後,將基板放入1 2 0 °C烘箱中3 0分鐘。然後,將 溶液3取出3 0 0 // L滴於改質後之I TO電極基板(即,本發明Diglyoxysilane (3-glycidoxypropyl (dimethoxy) methylsilane]; represented by silane-1) 0.1359g was dissolved in 250mL of deionized water, and the cleaned I TO electrode substrate was put into this solution for 5 minutes, and then , Place the substrate in an oven at 120 ° C for 30 minutes. Then, the solution 3 was taken out 3 0 0 // L and dropped on the modified I TO electrode substrate (ie, the transparent electrode substrate of the present invention) and spin-coated 3 at a rotation speed of 3 0 0 0 r · p · m · In 0 seconds, the main light-emitting layer is formed on the IT0 electrode substrate, and then the Ca / Al upper electrode is evaporated, so that the modified LED element can be obtained. (Example 2) (Indicated by s i 1 a n e-2) First, configure solution 1: 100 mg of PVK and 40 mg of PBD were added to 6.5 mL of chloroform, and then ultrasonically oscillated for 20 minutes. Next, configure solution 2: add 6 mg of Ce to 20 mL of chloroform, and also oscillate ultrasonically for 10 minutes until the particles are completely dissolved. Subsequently, 1 ml of the solution 2 was added to the solution 1 to prepare a solution containing PVK: PBD: C6 = 1 0 0: 4 0: 6 in 7.5 mL of chloroform. Finally, the solution 3 was obtained by filtering through f i 11 e r of 0 · 4 5 // L. Then, a silicon-containing alkoxy compound (such as N-phenylaminopropyltrimethoxy silane [N-phenylamino propyl trimethoxy silane]; represented by silane-2) 〇.1468g was dissolved in 2 5 OmL Remove the water, place the cleaned I TO electrode substrate in this solution for 5 minutes, and then place the substrate in a 120 ° C oven for 30 minutes. Then, take out solution 3 3 0 0 // L drop on the modified I TO electrode substrate (ie, the present invention

第10頁 488095 五、發明說明(8) 之透明電極基板)上以3 0 0 0 r · p · m ·之轉速旋轉塗佈3 0秒, 使主要發光層成膜於I T0電極基板上,再蒸鍍Ca/Al上電 極,即可得改質後之LED元件。 (實施例3)(以APTMS表示) 首先,配置溶液1 :將lOOmg之PVK與40mg之PBD加入 6 · 5之mL氯仿中,再以超音波振盪2 〇分鐘。接著,配置溶 液2 :將6mgiC6加入20mL之氯仿,同樣以超音波振盪10分 鐘直到顆粒完全溶解。隨後,將1 mL的溶液2加入溶液1中 配成最終比例為在7. 5mL的氯仿中含有PVK : PBD:C6 = 1 0 0 : 40 ·· 6的溶液。最後以〇· 45 // L之f i 1 ter過濾之即得溶春 液3。接者,將含矽之烷氧型化合物(如3-(2-氨基乙基氨 基)丙基三甲氧基石夕烧(3 -(2-Aminoethylamino) propyltrimethoxysilane),簡稱APTMS ) 0.1279g 溶解於 2 5 0mL之去離水中,將清潔好之IT0電極基板放入此溶液中 5分鐘,然後,將溶液3取出3 0 0 // L滴於改質後之I TO電極 基板(即,本發明之透明電極基板)上以3 0 0 0r. ρ· m.之轉速 旋轉塗佈3 0秒,使主要發光層成膜於I TO電極基板上,再 蒸鍍Ca/Al上電極,即可得改質後之LED元件。 (比較例)(習用之PLEDs製法;以PVK + PBD + C6表示) 首先,配置溶液1 :將100mg之PVK與40mg之 ® (2-(4-biphenylyl)-5-(4-tert-butylphenyl)l,3,4- oxadiazole; PBD)加入6.5之mL氯仿中,再以超音波振蘯 20分鐘。接著,配置溶液2 :將6mgiC6加入2 0mL之氯仿, 同樣以超音波振盪1 0分鐘直到顆粒完全溶解。隨後,將Page 10 488095 V. Description of the invention (8) Transparent electrode substrate) Spin-coated at a rotation speed of 3 0 0 r · p · m · for 30 seconds to form a main light-emitting layer on the I T0 electrode substrate. After the upper electrode of Ca / Al is vapor-deposited, the modified LED element can be obtained. (Example 3) (Expressed as APTMS) First, configure solution 1: 100 mg of PVK and 40 mg of PBD were added to 6.5 mL of chloroform, and then ultrasonically oscillated for 20 minutes. Next, configure solution 2: add 6mgiC6 to 20mL of chloroform, and also oscillate with ultrasound for 10 minutes until the particles are completely dissolved. Subsequently, 1 mL of solution 2 was added to solution 1 to prepare a solution containing PVK: PBD: C6 = 1 0 0: 40 ·· 6 in 7.5 mL of chloroform. Finally, the filtered solution was filtered through f i 1 ter of 0.45 // L to obtain dissolved spring solution 3. Then, 0.1279 g of a silicon-containing alkoxy compound (such as 3- (2-aminoethylamino) propyltrimethoxysilane) (referred to as APTMS) was dissolved in 2 5 0 mL of deionized water, put the clean IT0 electrode substrate into this solution for 5 minutes, and then take out solution 3 3 0 0 // L drop on the modified I TO electrode substrate (ie, the transparent of the present invention (Electrode substrate) was spin-coated for 30 seconds at a rotation speed of 3 0 0 0 r. Ρ · m., So that the main light-emitting layer was formed on the I TO electrode substrate, and then the upper electrode of Ca / Al was evaporated to obtain a modification. The next LED element. (Comparative example) (conventional PLEDs production method; expressed as PVK + PBD + C6) First, configure solution 1: 100 mg of PVK and 40 mg of ® (2- (4-biphenylyl) -5- (4-tert-butylphenyl) l, 3,4-oxadiazole; PBD) was added to 6.5 mL of chloroform, and then sonicated for 20 minutes. Next, configure solution 2: 6mgiC6 was added to 20 mL of chloroform, and the same was also oscillated with ultrasound for 10 minutes until the particles were completely dissolved. Then, will

488095 福 五、發明說明(9) lmL的溶液2加入溶液丄中配成最終比例為在7. 5mL的氯仿中488095 福 5. Description of the invention (9) lmL of solution 2 was added to the solution 丄 to prepare a final ratio of 7.5mL in chloroform

含有 PVK : PBD : c6 =100:40:6 的溶液。最後以0.45 //L 之f 1 1 ter過濾之即得溶液3。然後,將溶液3取出3〇〇 # [滴 於β〆好之I T 0電極基板上以3 〇 〇 〇 r · p · m •之轉速旋轉塗佈 30秒’使主要發光層成膜於IT〇電極基板上,再蒸鍍Ca/A1 上電極,即可得LED元件。 承上所述’如圖3所示,經上述實施例方法改質後之 ITO電極基板(APTMS,silane-1及silane-2)與未經本發 明改質之ITO電極基板(pVK + PBD + C6 ),利用旋轉塗佈法 將主要發光層成膜於其上並測其光激發光光譜 《 (Photoluminescence )並將強度歸一化後,可以看出主 要波段都未產生位移,表示所放射出之螢光顏色並未發生 改變。 又如圖4所示,經上述實施例方法改質後之I τ〇電極基 板(APTMS,silane-1及silane-2)與未經本發明改質之 ιτο電極基板(PVK+PBD+C6 ),利用旋轉塗佈法將主要發 光層成膜於其上並測其光激發光光譜 (Photoluminescence ),則可發現經含石夕之烧氧型化合 物修飾後之LED元件PL之訊號明顯增強,由此可見發明之 功效。 1 又如圖5所示,經上述實施例方法改質後之I το電極基 板(silane-1; silane-2; APTMS)與未經本發明改質之1了〇 電極基板,利用旋轉塗佈法將主要發光層成膜於其上,分 別鍍上Ca/Al電極,再測其亮度與電壓之關係,其結果可Solution containing PVK: PBD: c6 = 100: 40: 6. Finally, the solution 3 was obtained by filtering through 0.45 // L of f 1 1 ter. Then, the solution 3 was taken out 3〇〇 # [Drop onto the β〆 好 IT 0 electrode substrate spin-coated for 30 seconds at a speed of 3000r · p · m · 'to make the main light-emitting layer into IT. On the electrode substrate, the Ca / A1 upper electrode is evaporated to obtain the LED element. As shown in FIG. 3, as shown in FIG. 3, the ITO electrode substrate (APTMS, silane-1 and silane-2) modified by the method of the above embodiment and the ITO electrode substrate (pVK + PBD + C6) which has not been modified by the present invention. ), Using a spin-coating method to form a main light-emitting layer on top of it and measuring its photo-excitation light spectrum "(Photoluminescence) and normalize the intensity, it can be seen that no displacement has occurred in the main band, indicating that the emitted The fluorescent color has not changed. As shown in FIG. 4, the I τ〇 electrode substrate (APTMS, silane-1, and silane-2) modified by the method of the above embodiment and the ιτο electrode substrate (PVK + PBD + C6) not modified by the present invention, The spin-coating method was used to form the main light-emitting layer on top of it and the photoluminescence spectrum was measured. It can be found that the signal of the PL of the LED element modified by the oxygen-containing compound containing Shixi was significantly enhanced. The effect of the invention can be seen. 1 Also shown in FIG. 5, the I το electrode substrate (silane-1; silane-2; APTMS) modified by the method of the above embodiment and the 1.0 electrode substrate that has not been modified by the present invention are prepared by a spin coating method. The main light-emitting layer was formed on it, and the Ca / Al electrodes were respectively plated, and then the relationship between the brightness and the voltage was measured.

第12頁 488095 五、發明說明(ίο) 以明顯看出在相同電壓下,使用含矽之烷氧型化合物修飾 後之LED元件皆較修飾者明顯具較高之發光亮度。 此外,在較佳實施例之詳細說明中所提出之具體的實 施例僅為了易於說明本發明之技術内容,而並非將本發明 狹義地限制於該實施例,在不超出本發明之精神及以下申 請專利範圍之情況,可作種種變化實施。Page 12 488095 V. Description of the invention (ίο) It is obvious that at the same voltage, the LED elements modified with silicon-containing alkoxy compounds have significantly higher luminous brightness than the modified ones. In addition, the specific embodiments provided in the detailed description of the preferred embodiments are only for easy explanation of the technical content of the present invention, and are not intended to limit the present invention to the embodiment in a narrow sense. The scope of patent application can be implemented in various ways.

第13頁 488095Page 13 488095

圖式簡單說明 【圖式之簡單說明】 圖1係本發明較佳實施例之具有銦錫—氧—矽_有機官^ 基之透明電極基板形成的示意圖。 ; 圖2係本發明較佳實施例之有機發光二極體之構成示 意圖。 圖3係改質後之;[T〇電極基板(ApTMS,siUne —丨及 silane-2)與未經改質之IT〇電極基板(pVK + pBD + C6), 利用》疋轉塗佈法將主要發光層成膜於其上,並測其光激發 光光譜(Photoluminescence),且將強度歸一化後之光 譜圖。 < 圖4係改質後之IT0電極基板(ApTMS,sUane —丨及 silane-2)與未經改質之IT0基板(pVK + pBD + C6),利用 旋轉塗佈法將主要發光層成膜於其上,並測其光激發光光 譜(Photoluminescence)之光譜圖。 圖5係改質後之ΙΤ0電極基板(silane_1; sUane_2; APTMS)與未經改質之IT0電極基板,利用旋轉塗佈法將主 要發光層成膜於其上,且分別鍍上Ca/A1電極與 電壓關係的關係圖。 ' 〃Brief description of the drawings [Simplified description of the drawings] FIG. 1 is a schematic diagram of forming a transparent electrode substrate having an indium tin-oxygen-silicon-organic organic substrate based on a preferred embodiment of the present invention. Figure 2 is a schematic diagram showing the structure of an organic light emitting diode according to a preferred embodiment of the present invention. Figure 3 is the modified version; [T〇 electrode substrate (ApTMS, siUne — 丨, and silane-2) and unmodified IT 0 electrode substrate (pVK + pBD + C6), using the “疋 transfer coating method” The main light-emitting layer is formed thereon, and its photoluminescence spectrum is measured, and the intensity spectrum is normalized. < Figure 4 is the modified IT0 electrode substrate (ApTMS, sUane — 丨 and silane-2) and the unmodified IT0 substrate (pVK + pBD + C6). The main light-emitting layer was formed by spin coating. A photoluminescence spectrum was measured thereon. Figure 5 shows the modified ITO electrode substrate (silane_1; sUane_2; APTMS) and the unmodified IT0 electrode substrate. The main light-emitting layer was formed on the substrate by spin coating, and Ca / A1 electrodes were plated on it. Relationship with voltage. '〃

Claims (1)

488095 六、申請專利範圍 ------ 1 · 一種有機發光二極體,包含: 一基板; 一透明電極層,係形成於該基板上,用以鱼— 極連接,其表面係具有銦錫—氧—矽—有機 外。卩電 者; s此基之鍵結 一發光部,係形成於該透明電極層上, 光;及 雙激、發 一金屬電極層,係形成於該發光部上,用r 透明電極層所連接之電極相反之電極連接。u與一和該 其中該 其中該 2 ·如申請專利範圍第1項所述之有機發光二極體 基板係由玻璃材料所構成。 _ 3 ·如申請專利範圍第1項所述之有機發光二極體 基板係由有機塑膠材料所構成。 — 4 ·如申請專利範圍第1項所述之有機發光二極 發光部係包含一高分子有機發光層,該分子"^ 〃、>中该 月與该迈明電極層表面之銦錫—氧—碎〜有趟^ 、毛光層係 ^s能基結合。 5 ·如申請專利範圍第4項所述之有機發> — 70 —極體,其中該 高分子有機發光層係聚乙烯昨吨 (poly(N-vinylcarbazole) ’PVK)摻雜有機染料之高分488095 VI. Application Patent Scope ------ 1 · An organic light-emitting diode, comprising: a substrate; a transparent electrode layer formed on the substrate for fish-pole connection, and the surface of which has indium Tin-oxygen-silicon-organic outside. Electron; s This base is bonded to a light-emitting part, which is formed on the transparent electrode layer, and light; and a double-excitation, light-emitting metal electrode layer is formed on the light-emitting part, which is connected by a r transparent electrode layer. The opposite electrode is connected. u and Yihe, where the where the 2 · The organic light emitting diode substrate described in item 1 of the scope of patent application is composed of a glass material. _ 3 · The organic light-emitting diode substrate described in item 1 of the scope of patent application is composed of organic plastic materials. — 4 · The organic light-emitting diode light-emitting part described in item 1 of the scope of the patent application includes a high-molecular organic light-emitting layer, and the molecule " ^^, > —Oxygen—Break ~ There are trips ^, and the matt layer ^ s energy groups are combined. 5. Organic polar as described in item 4 of the scope of patent application-70-polar body, wherein the high molecular organic light emitting layer is a poly (N-vinylcarbazole) 'PVK' doped organic dye Minute 第15頁 — 488095Page 15 — 488095 子有機發光層。 6 · 種透明電極板,包含: 一基板;及 其表面係具有銦 一一透明電極層,係形成於該基板上 錫-氧-矽-有機官能基。 7·如申請專利範圍第6項所述之有機發光二極體,其中該 基板係由玻璃材料所構成。 X 8 ·如申明專利範圍第6項所述之有機發光二極體,其中該、 基板係由有機塑膠材料所構成。 ^ 9.種^明電極基板製造方法,係包含以下步驟: 將含矽之烷氧型化合物溶於水中以形成一定 石夕之烷2型化合物水溶液;及 將表面具有氫氧基之銦錫氧透明基板(I το電極基 板)次泡於該含矽之烷氧型化合物水溶液中,經一定時間 ^ 开y成表面具有銦錫-氧-矽-有機官能基之透明電極 =·如,申請專利範圍第9項所述之透明電極基板製造方法, ,、 ,该透明電極基板製造方法之步驟更包含·· 以疋的溫度、時間將浸泡後之透明電極基板加以烘Organic light emitting layer. 6. A transparent electrode plate comprising: a substrate; and a surface having indium and a transparent electrode layer formed on the substrate with tin-oxygen-silicon-organic functional groups. 7. The organic light-emitting diode according to item 6 of the scope of patent application, wherein the substrate is made of a glass material. X 8 · The organic light emitting diode according to item 6 of the declared patent scope, wherein the substrate is made of an organic plastic material. ^ 9. Species ^ A method for manufacturing a bright electrode substrate, comprising the following steps: dissolving a silicon-containing alkoxy-type compound in water to form a certain aqueous solution of alkane-type 2 compound; and indium tin oxide having a hydroxyl group on the surface A transparent substrate (I το electrode substrate) was soaked in the silicon-containing alkoxy compound aqueous solution, and after a certain period of time, a transparent electrode having an indium tin-oxy-silicon-organic functional group on the surface was opened. The method for manufacturing a transparent electrode substrate as described in the item 9 of the scope, the steps of the method for manufacturing a transparent electrode substrate further include: baking the immersed transparent electrode substrate at a temperature and time of 疋. 第16頁 488095 六、申請專利範圍 烤。 1 1 ·如申請專利範圍第9項所述之透明電極基板製造方法, 其中,該含矽之烷氧型化合物水溶液之濃度(V/V)係 0 · (Π 〜1 %。 1 2 ·如申請專利範圍第9項所述之透明電極基板製造方法, 其中,該銦錫氧透明基板(I T0電極基板)之浸泡時間約為5 分鐘。 i 1 3.如申請專利範圍第9項所述之透明電極基板製造方法, 其中,該含矽之烷氧型化合物為3-(2 -氨基乙基氨基)丙基 三甲氧基矽烷。 1 4.如申請專利範圍第9項所述之透明電極基板製造方法, 其中,該含矽之烷氧型化合物為T -環氧丙醇丙基二甲氧 基矽烷。 1 5.如申請專利範圍第9項所述之透明電極基板製造方法, 其中,該含矽之烷氧型化合物為N-苯基氨基丙基三甲氧基4 矽烷。 1 6.如申請專利範圍第1 0項所述之透明電極基板製造方 法,其中,該透明電極基板之烘烤溫度為8 0〜1 6 0 °C、烘烤Page 16 488095 VI. Scope of patent application Baking. 1 1 · The method for manufacturing a transparent electrode substrate as described in item 9 of the scope of the patent application, wherein the concentration (V / V) of the silicon-containing alkoxy compound aqueous solution is 0 · (Π ~ 1%. 1 2 · such as The method for manufacturing a transparent electrode substrate according to item 9 of the scope of patent application, wherein the immersion time of the indium tin oxide transparent substrate (I T0 electrode substrate) is about 5 minutes. I 1 3. As described in item 9 of the scope of patent application A method for manufacturing a transparent electrode substrate, wherein the silicon-containing alkoxy compound is 3- (2-aminoethylamino) propyltrimethoxysilane. 1 4. The transparent electrode according to item 9 of the scope of patent application A method for manufacturing a substrate, wherein the silicon-containing alkoxy compound is T-glycidyl propyl dimethoxysilane. 1 5. The method for manufacturing a transparent electrode substrate according to item 9 of the scope of patent application, wherein, The silicon-containing alkoxy-type compound is N-phenylaminopropyltrimethoxy4 silane. 1 6. The method for manufacturing a transparent electrode substrate according to item 10 of the scope of patent application, wherein the transparent electrode substrate is baked. Roasting temperature is 80 ~ 160 ° C, baking 第17頁 488095Page 17 488095 第18頁Page 18
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Publication number Priority date Publication date Assignee Title
WO2022134810A1 (en) * 2020-12-24 2022-06-30 京东方科技集团股份有限公司 Photoelectric device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022134810A1 (en) * 2020-12-24 2022-06-30 京东方科技集团股份有限公司 Photoelectric device

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