TW487984B - Method of cleaning porous body and process for producing porous body, non-porous film or bonded substrate - Google Patents

Method of cleaning porous body and process for producing porous body, non-porous film or bonded substrate Download PDF

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Publication number
TW487984B
TW487984B TW089105066A TW89105066A TW487984B TW 487984 B TW487984 B TW 487984B TW 089105066 A TW089105066 A TW 089105066A TW 89105066 A TW89105066 A TW 89105066A TW 487984 B TW487984 B TW 487984B
Authority
TW
Taiwan
Prior art keywords
porous
cleaning
scope
patent application
item
Prior art date
Application number
TW089105066A
Other languages
Chinese (zh)
Inventor
Kenji Yamagata
Satoshi Matsumura
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP08360099A external-priority patent/JP3245127B2/en
Priority claimed from JP08359999A external-priority patent/JP3320379B2/en
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of TW487984B publication Critical patent/TW487984B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40—Specific cleaning or washing processes
    • C11D2111/46—Specific cleaning or washing processes applying energy, e.g. irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

In order to clean a porous body in a short time without causing any change in its structure, in a cleaning method of cleaning a porous body formed by anodization, the porous body is cleaned after the anodization is completed, with a cleaning solution containing at least one of an alcohol and acetic acid.

Description

487984 經濟部智慧財產局員工消費合作社印製 A7 _B7_ 五、發明說明（1 ) 發明背景 發明領域 本發明係關於一種淸潔有孔體之方法，及一種用於製 造有孔體、無孔膜或接合基體之處理。更特別地是，本發 明屬於製造處理的技術範疇，其中可以增進在陽極化之後 淸潔有孔體的方法，以形成具有均勻厚度的無孔膜。 相關背景技術 在下列說明中，採用多孔矽的情形作爲有孔體之範例 〇 多孔砂是藉由A. Uhlir及D.R. Turner在其硏究的過程 中被發現的，此項硏究是產生在氟化氫水溶液中（以下簡 化爲> H F 〃）被偏壓到正電位的單晶矽之電解拋光。 自從那時起，利用多孔矽在反應度上的極佳性質，產 生許多硏究在其應用到元素間的離析之步驟，此元素間離 析需要在一矽積體電路製造處理中形成薄絕緣膜，且已經 發展一種 F I Ρ 〇 S 技術（full isolation by porous oxidized silicon藉多孔氧化矽之完全隔離）其中裝置元素 藉由多孔5夕氧化膜被完全隔離（K. Imai，Solid-state Electron 24, 159, 1981) 最近，例如在日本專利案No · 2608351及美 國專利案No · 5371037中亦提出一項技術，其中 生長在多孔矽基體上的矽外延層是被隨意地接合到一無定 形基體或單晶矽基體的表面，經由一氧化膜以獲得一 S 〇 I 基體（silicon on insulator )。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —^---------------^----訂---------線 (請先閱讀背面之>注意事t再填寫本頁) -4- 487984 A7 B7 五、發明說明（2 ) 此外，日本先行公開專利申請案N ◦ · 6 - 3 3 8 6 3 1揭露一項技術注意到將多孔矽作爲發光 材質例如所謂的光致發光材質或電致發光材質。 一般使用陽極化以形成有孔體。 作爲形成有孔體之範例，藉由使矽基體受到陽極化用 於製造多孔矽之設備顯示在圖1 8中。 在圖1 8中所示的設備或單元是被揭露在日本先行公 開專利申請案N ◦· 6 0 - 9 4 7 3 7。此陽極化設備包 含由抗H F材質特氟隆（美國商標爲杜邦）所製成的陽極 化電解槽6 1及6 2，此電解槽被設置以便在其中間固持 一個作爲處理目標物的矽基體W。電解槽6 1及6 2分別 設有一負電極6 3及一正電極6 4。電解槽6 1及6 2具 有鉤紋在側壁中進而接觸矽基體W。在這些溝紋中，例如 由氟橡膠所製成的〇-環6 5及6 6之密封構件是被個別 地配合。因此，固持矽基體W的電解槽6 1及6 2是被以 〇 -環6 5及6 6密封。以此方式密封的電解槽6 1及 6 2被個別地以H F水溶液6 7及6 8塡滿。 除此之外，亦提到一些陽極化設備。 同時，已經產生關於在陽極化之後淸潔有孔半導體基 體之方法，在日本先行公開專利申請案Ν 〇 · 1 0 - 6 4 7 8 7 0報導一項範例，但它顯示除此之外， 非常少的範例已經被報導。 爲淸潔在結構上具有高表面活性的有孔體，可以使用 以下的液體化學藥品：例如硫酸及過氧化氫的水溶液（以 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 請 先 閱 讀 背 面 意 事 項‘ 再 填 本 頁 I I 訂 經濟部智慧財產局員工消費合作社印製 -5- 487984 Α7 Β7 五、發明說明（3 ) 下稱、S P Μ 〃）’氨及過氧化氫的水溶液（以下稱、、 S C - 1 〃）及氫氯酸及過氧化氫的水溶液（以下稱、、 S C — 2 〃 ），這些藥品一般被使用以移除有機物質、粒 子沉澱或金屬沉澱。於是，提出一種淸潔方法其中使用具 有超音波能量的純水代替這些化學藥品，以移除已經黏著 於有孔層表面的外來物質，如在日本先行公開專利申請案 No· 10—64870中所揭露的。圖19是這種淸 潔的步驟之流程圖。在步驟S T P 1中有孔體已經出現在 它被陽極化之後，在步驟S T P 2被以具有超音波能量的 純水淸潔，接著在步驟S T P 3中被乾燥。 上述公開案亦揭露一種方法，其中有孔層表面是被以 臭氧水溶液或過氧化氫水作親水性處理，且之後被以具有 超音波能量的純水淸潔。 然而，在淸潔有孔半導體時，當然表面的淸潔是不可 少的，但重要的是已經進入細微孔洞的陽極化電解質溶液 是如何被移除的。這是因爲，然而表面已經被淸潔，殘餘 在孔洞中的電解質溶液（通常是具有重量百分率濃度1 〇 %到5 0 %的H F溶液）導致有孔體的結構改變。 此外，已經從孔洞的內部逐漸蒸發成爲H F氣體之 H F可能侵蝕周圍的裝置。而且，由於侵蝕所產生的粒子 可能會沾污基體。 而且，由於要花時間以純水去取代在孔洞中的H F， 所以以純水的淸潔必須經過長時間實行。在這樣的情形下 ，有孔體可能在純水中弄皺而導致粒子大量產生之困難。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事免再填寫本頁) ------^----訂---------線一 經濟部智慧財產局員工消費合作社印製 -6- 經濟部智慧財產局員工消費合作社印製 487984 Α7 Β7 五、發明說明（4 ) 這樣的有孔體亦最好是被使用在利用s 0 I技術中的 接合基體製造。 圖2 0是一圖形，顯示製造一接合基體之處理。 首先，在步驟S 1中，備製一無孔基體1例如一單晶 矽晶圓，且其表面藉由陽極化被製成有孔的以形成一由單 晶矽所形成的有孔層2。 其次，在步驟S 2中，有孔層2被以純水淸潔以洗掉 黏著於有孔層的外來物質或用於陽極化的電解質溶液。 接著，在步驟S 3中，由單晶矽所形成的一無孔層3 是被藉由例如CVD ( chemical vapor deposition化學蒸鍍 )外延地生長在有孔層2上。 然後，在步驟S 4中，無孔層的表面是被熱氧化以形 成一隔離層4。 在隨後的步驟S 5中，隔離層4的表面是被接合到分 開備製的支撐基座5，以形成一多層結構，在此多層結構 中無孔層4是被放置在內側的。 在一步驟S 6中，剩餘而沒有被製成有孔之基體1的 無孔部位，是被藉由硏磨及藉由隨後的離子鈾刻移除。 然後，在步驟S 7中，未被覆蓋的有孔層2被藉由以 含有H F及Η 2 0 2的水溶液蝕刻而移除。 無孔半導體層的表面可以藉由熱處理隨意地被平滑， 此熱處理是產生在一含有氫氣的還原氣體中，因此獲得一 接合基體具有一薄半導體層在一絕緣層上，此絕緣層是形 成於支撐基座上的。圖2 1說明以此方式獲得的一結合基 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） .---------K----訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 487984 A7 B7 五、發明說明（5 ) 體之上表面。參考數字1 2表示一凹口。 然而，在觀察因此所形成的無孔半導體層之表面時’ 經常很少看到圓形點1 1 (霧），此圓形點光學上看起來 不同於其周圍區域。由於仔細觀察圓形點1 1 ，已經發現 是由於以下事實：存在形成於支撐基座上的絕緣層上之無 孔層局部處於很小的厚度（或薄）之狀態。亦即，無孔層 證明具有局部被導致微觀起來不均勻的膜厚度。 發明槪述 本發明之一目的是要提供有孔體的淸潔方法’藉此方 法陽極化溶液可以從有孔體被完全移除，而未導致任何有 孔體有孔結構之改變且即使當被淸潔於一小段時間時，及 提供用於製造有孔體之處理。 本發明的另一個目的是要提供一有孔體的淸潔方法， 此方法可幾乎不導致周圍裝置的侵鈾，及一於製造有孔體 之處理。 ， 本發明的淸潔方法是淸潔藉由陽極化所形成的有孔體 之方法，且特徵爲包含步驟爲：在陽極化完成之後，以含 有醇類（alcohol )及醋酸之至少一種的淸潔溶液，淸潔有 孔體。 本發明的有孔體製造處理，特徵爲包含步驟在於：使 一無孔體受到陽極化且之後以含有醇類及醋酸之至少一種 的淸潔溶液，淸潔有孔體。 本發明之另一個目的是要提供用於製造無孔膜及沒有 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --!--------------^----訂---------線 (請先閱讀背面之，注意事t再填寫本頁) -8- 487984 A7 B7 五、發明說明（6 ) 不均勻膜厚度的接合基體之處理。 本發明的上述處理，特徵爲用於製造無孔膜或接合基 體之處理，處理包含步驟在於：藉由陽極化形成一有孔層 、接合一支撐基座到一形成於有孔層上的無孔層，及移除 有孔層，其中： 本處理更進一步包含步驟爲：在陽極化完成之後，以 含有醇類及醋酸之至少一種的淸潔溶液，淸潔有孔層。 首先，本發明者已經考慮到：發生先前提到的薄霧是 因爲當有孔層從無孔層的表面被移除時，在陽極化時的條 件或蝕刻條件並非最佳的。然而，發現任何這些條件的調 整，對於不均勻膜厚度之控制不會有太多影響。然後，藉 由本發明者所作之更進一步的硏究已經揭露出：導致此不 均勻的膜厚度端視陽極化之後所作的處理而定。 於是，在本發明中，上述淸潔方法，在陽極化之後被 使用在濕式淸潔中，使得接合基體的無孔層幾乎不會導致 不均勻的膜厚度。 圖示簡易說明 圖1是根據本發明淸潔有孔體的步驟之流程圖。 圖2是一有孔體立刻在陽極化之後所處狀態的剖面圖 〇 圖3是--有孔體之剖面圖，爲在如圖2中所示的有 孔體在陽極化之後已經立刻被以純水淸潔。 圖4是一圖形，說明根據本發明以醇類淸潔的動作。 $紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ------^----訂---------線- 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 糾7984 A7 --------B7___ 五、發明說明（7 ) 圖5是一圖形，說明在本發明中所使用以純水淸潔的 動作。 圖6是一圖形，顯示在本發明中所使用的一陽極化及 淸潔單元。 圖7是一圖形，顯示在本發明所使用作爲另一個形式 之一系統’個別地具有一陽極化單兀及一淸潔單元。 圖8是一圖形，顯示在本發明中所使用作爲另一個形 式1的一淸潔及乾燥單元。 圖9是一圖形，顯示在本發明中所使用作爲另一個形 式的一淸潔及乾燥單元。 圖1 0是根據本發明用於製造接合基體之處理的一流 程圖。 圖1 1是一圖形，顯示在本發明中所使用的一陽極化 單元之部分。 圖1 2是一圖形，顯示在本發明中所使用的一陽極化 単兀。 圖1 3是一圖形，顯示在本發明中所使用的一系統， 個別地具有一陽極化單元及一淸潔單元。 圖1 4是一圖形，顯示在本發明中所使用作爲另一個 形式的一系統，個別地具有一陽極化單元及一淸潔單元。 圖15A、圖15B、圖15C及圖15D是圖形， 說明藉由一習知方法之淸潔動作。 圖1 6 A、圖1 6 B及圖1 6 C是圖形，說明根據本 發明的淸潔動作。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----K----^--------- (請先閱讀背面之注意事項再填寫本頁) -10- 487984 A7 B7 五、發明說明（8 ) 圖1 7是一頂視圖，顯示藉由本發明之處理所獲得的 接合基體之外型。 圖1 8是一圖形，顯示一習知陽極化單元。 圖1 9是以一習知方法淸潔一有孔體的步驟之流程圖 〇 圖2 0是用於製造接合基體的一習知處理之流程圖。 圖2 1是一頂視圖，說明藉由一習知處理所獲得的接 合基體之外型。 主要元件對照表 W 處理標的物 1 無孔體 2 有孔層 3 無孔層 4 絕緣層 5 支撐基座 6 密封構件 11 圓形點 12 凹口 2 1 排水管 22，23 連通路徑 2 5 台 2 6 溢出槽 2 7 供給噴嘴 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)487984 Printed by A7 _B7_ of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (1) Background of the Invention The present invention relates to a method for cleaning porous bodies, and a method for manufacturing porous bodies, non-porous membranes or Treatment of bonding substrates. More particularly, the present invention belongs to the technical category of manufacturing processes, in which a method of cleaning a porous body after anodizing can be enhanced to form a non-porous film having a uniform thickness. Related Background Art In the following description, the case of porous silicon is used as an example of a porous body. Porous sand was discovered by A. Uhlir and DR Turner in the course of their research. This research was developed in Electrolytic polishing of single crystal silicon biased to a positive potential in an aqueous hydrogen fluoride solution (hereinafter abbreviated as > HF). Since then, using the excellent properties of porous silicon in the reactivity, many steps have been taken to investigate the application of element-to-element segregation, which requires the formation of a thin insulating film in a silicon integrated circuit manufacturing process And has developed a FI POS technology (full isolation by porous oxidized silicon) in which the device elements are completely isolated by a porous oxide film (K. Imai, Solid-state Electron 24, 159 (1981) Recently, for example, in Japanese Patent No. 2608351 and US Patent No. 5371037, a technology is also proposed in which a silicon epitaxial layer grown on a porous silicon substrate is randomly bonded to an amorphous substrate or a single substrate. The surface of the crystalline silicon substrate passes through an oxide film to obtain a SOI substrate (silicon on insulator). This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) — ^ --------------- ^ ---- Order -------- -Line (please read the ">" on the back and fill in this page first) -4- 487984 A7 B7 V. Description of the invention (2) In addition, the Japanese first published patent application N ◦ · 6-3 3 8 6 3 1 One technique is disclosed that uses porous silicon as a light emitting material such as a so-called photoluminescent material or an electroluminescent material. Anodizing is generally used to form the porous body. As an example of forming a porous body, an apparatus for manufacturing porous silicon by subjecting a silicon substrate to anodization is shown in FIG. 18. The device or unit shown in Fig. 18 is disclosed in the Japanese prior patent application N ◦ · 60-9 4 7 3 7. This anodizing device includes anodized electrolytic cells 6 1 and 62 made of HF-resistant Teflon (U.S. trademark DuPont). This electrolytic cell is set to hold a silicon substrate as a treatment target in the middle. W. The electrolytic cells 6 1 and 6 2 are respectively provided with a negative electrode 63 and a positive electrode 64. The electrolytic cells 6 1 and 62 have hook patterns in the side walls to contact the silicon substrate W. Among these grooves, sealing members such as O-rings 65 and 66 made of fluorine rubber are individually fitted. Therefore, the electrolytic cells 6 1 and 62 holding the silicon substrate W are sealed with O-rings 65 and 66. The electrolytic cells 6 1 and 6 2 sealed in this way are individually filled with H F aqueous solutions 67 and 68. In addition, some anodizing equipment is mentioned. At the same time, an example of a method for cleaning a porous semiconductor substrate after anodization has been produced, and an example has been reported in Japanese prior patent application No. 〇 · 10-6 4 7 8 7 0, but it shows that, Very few examples have been reported. In order to clean the porous body with high surface activity in the structure, the following liquid chemicals can be used: for example, aqueous solutions of sulfuric acid and hydrogen peroxide (applicable to the Chinese National Standard (CNS) A4 specification (210 X 297) at this paper scale) Li) Please read the notice on the back side 'before filling in this page II. Order printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs -5- 487984 Α7 Β7 V. Description of the invention (3) hereinafter referred to as SP Μ 〃)' Ammonia and peroxide Aqueous solutions of hydrogen (hereinafter, SC-1 1) and aqueous solutions of hydrochloric acid and hydrogen peroxide (hereinafter, SC-2 〃). These drugs are generally used to remove organic substances, particle precipitation or metal precipitation. . Therefore, a cleansing method is proposed in which pure water with ultrasonic energy is used in place of these chemicals to remove foreign substances that have adhered to the surface of the porous layer, as disclosed in Japanese First Published Patent Application No. 10-64870. Exposed. Fig. 19 is a flowchart showing the steps of such cleaning. The porous body has appeared in step S T P 1 after it has been anodized, and is cleaned with pure water having ultrasonic energy in step S T P 2 and then dried in step S T P 3. The above publication also discloses a method in which the surface of the porous layer is hydrophilically treated with an aqueous solution of ozone or hydrogen peroxide, and is then cleaned with pure water having ultrasonic energy. However, when cleaning porous semiconductors, the surface cleaning is of course indispensable, but what is important is how the anodized electrolyte solution that has entered the fine holes is removed. This is because, however, the surface has been cleaned, and the electrolyte solution remaining in the pores (usually an H F solution having a weight percentage concentration of 10% to 50%) causes a change in the structure of the porous body. In addition, H F that has gradually evaporated from the inside of the hole to H F gas may erode surrounding devices. Furthermore, particles generated by the erosion may contaminate the substrate. Moreover, since it takes time to replace H F in the hole with pure water, cleaning with pure water must be performed for a long time. In such a situation, the porous body may be wrinkled in pure water, which may cause difficulty in generating a large number of particles. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ------ ^ ---- Order ----- ---- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-6- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 Α7 Β7 V. Description of the invention (4) Such a porous body is also best used Manufacturing of bonded substrates using s 0 I technology. FIG. 20 is a diagram showing a process of manufacturing a bonded substrate. First, in step S1, a non-porous substrate 1 such as a single crystal silicon wafer is prepared, and its surface is made porous by anodization to form a porous layer 2 formed of single crystal silicon. . Next, in step S2, the porous layer 2 is rinsed with pure water to wash off foreign substances adhering to the porous layer or an electrolytic solution for anodization. Next, in step S3, a non-porous layer 3 formed of single crystal silicon is epitaxially grown on the porous layer 2 by, for example, CVD (chemical vapor deposition). Then, in step S4, the surface of the non-porous layer is thermally oxidized to form an isolation layer 4. In the subsequent step S5, the surface of the isolation layer 4 is bonded to a separately prepared support base 5 to form a multilayer structure in which the non-porous layer 4 is placed on the inside. In a step S6, the non-porous portions of the substrate 1 remaining without being made into holes are removed by honing and by subsequent ion uranium etching. Then, in step S7, the uncovered porous layer 2 is removed by etching with an aqueous solution containing H F and Η 2 02. The surface of the non-porous semiconductor layer can be optionally smoothed by heat treatment. This heat treatment is generated in a reducing gas containing hydrogen. Therefore, a bonding substrate is obtained with a thin semiconductor layer on an insulating layer. The insulating layer is formed on On the support base. Figure 2 1 illustrates that a combination of basic paper sizes obtained in this way applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) .--------- K ---- Order ---- ----- line (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 A7 B7 V. Description of the invention (5) The upper surface of the body. Reference numeral 1 2 denotes a notch. However, when observing the surface of the non-porous semiconductor layer thus formed, it is often rare to see a circular point 1 1 (fog), which circular point optically looks different from its surrounding area. As a result of careful observation of the circular point 1 1, it has been found that it is due to the fact that the non-porous layer existing on the insulating layer formed on the support base is locally in a very small (or thin) state. That is, the non-porous layer proved to have a film thickness that was locally caused to be microscopically nonuniform. SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for cleaning a porous body. By this method, the anodizing solution can be completely removed from the porous body without causing any change in the porous structure of the porous body. When cleaned for a short period of time, and provide processing for the production of perforated bodies. Another object of the present invention is to provide a cleaning method for a perforated body, which can hardly cause uranium invasion of surrounding devices, and a process for making a perforated body. The cleaning method of the present invention is a method of cleaning the porous body formed by anodization, and is characterized by including the step of: after the anodization is completed, containing at least one of alcohol and acetic acid. Clean solution, clean the body with holes. The porous body manufacturing process of the present invention is characterized by comprising the steps of subjecting a non-porous body to anodization and then cleaning the porous body with a cleaning solution containing at least one of alcohols and acetic acid. Another object of the present invention is to provide a non-porous film for manufacturing non-porous films and without the paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)-! ----------- --- ^ ---- Order --------- line (please read the back first, pay attention to t before filling out this page) -8-487984 A7 B7 V. Description of the invention (6) Uneven film Treatment of thick bonded substrates. The above process of the present invention is characterized by a process for manufacturing a non-porous film or a bonded substrate, and the process includes the steps of: forming an apertured layer by anodizing, bonding a support base to an Porous layer and removing the porous layer, wherein: the process further includes the step of: cleaning the porous layer with a cleaning solution containing at least one of alcohol and acetic acid after the anodization is completed. First, the present inventors have considered that the aforementioned mist occurs because the conditions or etching conditions at the time of anodization are not optimal when the porous layer is removed from the surface of the non-porous layer. However, it was found that adjustment of any of these conditions would not have much effect on the control of non-uniform film thickness. However, further investigations by the inventors have revealed that the end of this non-uniform film thickness depends on the treatment performed after anodizing. Therefore, in the present invention, the above-mentioned cleaning method is used in wet cleaning after anodizing, so that the non-porous layer of the bonded substrate hardly causes uneven film thickness. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flowchart of steps for cleaning a perforated body according to the present invention. Fig. 2 is a cross-sectional view of a state where a porous body is immediately after anodizing. Fig. 3 is a cross-sectional view of a porous body, which is shown in FIG. 2 immediately after anodizing. Cleanse with pure water. Fig. 4 is a diagram illustrating the action of cleaning with alcohols according to the present invention. $ Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ------ ^ ---- Order ------ --- Line-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed 7984 A7 -------- B7___ V. Description of the invention (7) Figure 5 is a graphic, The operation of purifying with pure water used in the present invention will be described. Fig. 6 is a diagram showing an anodizing and cleaning unit used in the present invention. Fig. 7 is a diagram showing a system 'used as another form of the present invention individually having an anodizing unit and a cleaning unit. Fig. 8 is a diagram showing a cleaning and drying unit as another form 1 used in the present invention. Fig. 9 is a diagram showing a cleaning and drying unit used as another form in the present invention. Fig. 10 is a flowchart showing a process for manufacturing a bonded substrate according to the present invention. Fig. 11 is a diagram showing a part of an anodizing unit used in the present invention. Fig. 12 is a diagram showing an anodizing structure used in the present invention. FIG. 13 is a diagram showing a system used in the present invention, each having an anodizing unit and a cleaning unit. Fig. 14 is a diagram showing a system used as another form in the present invention, each having an anodizing unit and a cleaning unit. FIG. 15A, FIG. 15B, FIG. 15C, and FIG. 15D are diagrams illustrating cleaning operations by a conventional method. Figures 16A, 16B and 16C are diagrams illustrating the cleaning action according to the present invention. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ---- K ---- ^ --------- (Please read the precautions on the back before filling this page ) -10- 487984 A7 B7 V. Description of the invention (8) Fig. 17 is a top view showing the shape of the bonded substrate obtained by the treatment of the present invention. FIG. 18 is a diagram showing a conventional anodizing unit. Fig. 19 is a flowchart of steps for cleaning a perforated body by a conventional method. Fig. 20 is a flowchart of a conventional process for manufacturing a bonded substrate. Fig. 21 is a top view illustrating the shape of the bonded substrate obtained by a conventional process. Comparison table of main components W Target object 1 Non-porous body 2 Porous layer 3 Non-porous layer 4 Insulating layer 5 Support base 6 Sealing member 11 Round point 12 Notch 2 1 Drain pipe 22, 23 Communication path 2 5 Units 2 6 Overflow tank 2 7 Supply nozzle This paper is sized for China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

-i^w^—K----訂---------線 I 經濟部智慧財產局員工消費合作社印製 -11 - 487984 A7 B7 發明說明（9) 3 4 旋轉夾頭固持器 3 8 上噴嘴 3 9 下噴嘴 4 1 醇類淸潔單元 4 2 純水淸潔單元 5 1 蓋 5 2 排氣路徑 6 1 ，6 2 電解槽 6 3 負電極 6 4 正電極 6 5 ，6 6 〇環 6 7 陽極化溶液 6 9 開口 8 0 電解質溶液 8 2 ，8 5 純水 8 3 淸潔溶液 8 4 層 1 0 2 基底固持構件 (請先閱讀背面之注意事項再填寫本頁) ------^----訂---------線一 經濟部智慧財產局員工消費合作社印製 10 3 開口 104 環型基底吸引墊片 105 抽氣線路 106 輸送機器人 2 0 8 廢液出口 209 電解質溶液 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -12- 487984 A7 B7 五、發明說明（10) 3 0 1 負載器 3 0 2 陽極化 槽 3 0 3 淸潔槽 3 0 4 旋轉乾 燥 器 3 0 5 卸載器 3 0 6 托架輸 送 機 器人 3 0 7 基底逐 片 輸 送機器人 3 0 8 系統 3 0 9 機器人 乾 燥 器 3 1 0 第一淸 潔 槽 6 0 1 基底 6 0 2 孔洞 6 0 4 空氣層 6 0 6 乾燥物 質 7 0 1 基底 7 0 2 孔洞 (請先閱讀背面之注意事項再填寫本頁) ----l·· 訂---------線* 經濟部智慧財虞扃員工消費合作社印製 較佳實施例之詳細說明― 圖1是一本發明的淸潔方法之流程圖。 首先，在步驟S 1中，一無孔體被藉由陽極化處理以 形成一有孔體。（A有孔體〃在此意思是包括整個是有孔 的材質及具有以下所說的有孔層之材質） 接著，在步驟S 2中，淸潔有孔體藉由將它浸入在 1 0 0 %醇類或醇類水溶液中，藉由逐滴地添加1 〇 0 % 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -13- 487984 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（11 ) 醇類或醇類水溶液到有孔體，或藉由將有孔體暴露在 1 0 0 %的醇類或醇類水溶液的蒸氣中。 其次，隨意在步驟S 3中，有孔體被以純水淸潔。在 此步驟中，而且有孔體可以被浸在純水中，純水可以逐滴 地添加到有孔體，或者有孔體可以被暴露在水蒸氣中。在 此，最好以具有超音波能量的純水淸潔有孔體，藉由使用 一超音波振動器。 然後，在步驟S 4中，有孔體被乾燥以完成一系列的 淸潔步驟。 通常，在例如矽的半導體受到陽極化以形成有孔體的 情形中，產生陽極化藉由施加一電場到矽基底，在一具有 相當高濃度的H F水溶液中。正對著負電極的矽表面（此 矽表面大致上作爲陽極）被蝕刻以致於沿著電場方向延伸 形成細微孔洞，使得它成爲具有多孔結構。 所形成的孔洞具有一大小分布從幾十毫微米到幾百毫 微米，且具有一到達1 Ο11。〇 r e s/cm2或更高的 密度。孔洞的大小及密度改變視陽極化的條件而定，亦即 ，氫氟酸的濃度、陽極化電壓値或陽極化電流及導電形式 或基底的特定電阻。可以藉由調整這些條件控制其多孔性 ，藉此大部分適合於發光材質的結構或大部分適合於基座 結構用於晶膜生長的有孔體，可以被相當輕易地產生。 然而，即使正確地獲得如設計一樣的有孔體，它們可 能導致有孔體的結構上之改變或可能被包含在二次沾污中 ，除非它們在陽極化之後被充份地淸潔。圖2到5是顯示 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------------K----訂---------線 m I (請先閱讀背面之注音？事項再填寫本頁) -14- 487984 Α7 Β7 五、發明說明（12) 有孔體的孔洞內部是處在何等狀態之圖形。 (請先閱讀背面之注意事項再填寫本頁) 這樣的結構上改變及二次沾污是被導致藉由，如圖2 所示，如上述殘留在孔度中且逐漸以氣體形式蒸發的H F 水溶液8 0。於是，需要一種淸潔法不允許任何陽極化溶 液H F水溶液8 0殘留在孔洞中。參考數字8 1標示有孔 體的孔壁。 假如在陽極化完成之後基底僅被以純水淸潔的話，雖 然在有孔層的層表面上之H F成分是可以移除的，但是難 以移除殘留在孔度中的H F。如圖3所示，這是因爲有孔 體的層表面變得不沾水（hydrophobic )由於其與H F水溶 液8 2的接觸，且即使它被以水淸洗之後，對水而言它已 經變得難以滲透進入孔洞中。明確地說，在測量純水的特 定電阻對於時間的改變，在此純水中已經受到陽極化的有 孔體處於浸入的狀態，在這裡發生一個現象：特定電阻的 値不會返回到原始値。這是因爲已經逐漸蒸發在孔洞中的 H F以低速率溶解在純水中。 經濟部智慧財產局員工消費合作社印製 爲了淸潔孔洞的內部，實驗上亦至少需要以純水去取 代在槽中的陽極化溶液，在陽極化被完成之後三分鐘之內 ，且實施以純水充分地沖洗。然而，這樣的程序縮小淸潔 處理的自由度而且使淸潔單元的設計成爲受限制的。 本案發明者重複不同的實驗。結果，他們發現：义添 加1 0 0 %醇類或醇類水溶液的純水淸洗’能夠輕易地以 淸潔溶液取代在孔洞中的陽極化溶液，且如此已實現本發 明。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -15- 487984 Α7 Β7 五、發明說明（i3) 一旦有孔體被浸含有入醇類的淸潔溶液中時’如圖4 所示，淸潔溶液8 3滲透進入細微孔洞中而變成與被殘留 在孔洞中的陽極化溶液混合。然後，即使當有孔體被暴露 到如它一般的空氣時，其表面被保持濕潤一會兒。更明確 地，有孔體的表面亦被覆蓋以一由淸潔溶液或陽極化溶液 所形成的層8 4。此有孔體再一次浸入純水8 5中，如圖 5所示，使得水8 5輕易地滲透浸入孔洞中，因此殘留其 中的陽極化溶液8 0可以被以純水8 5取代。 在那之後，即使假如純水8 5已經殘留再有孔體的孔 洞中的話，水會自然地蒸發。在那樣的過程中，所蒸發的 只是水而已，且因此它很少導致周圍裝置的侵蝕或性質的 改變或有孔體的結構本身之敗壞。 本發明所使用的有孔體可以包括例如S i ，G e， GaAs ，GaAlAs ，SiC，SiGe 及 C 的半導 體。特別是，具有小於7 0 %的多孔性之有孔矽是較好的 作爲一個用於晶膜生長的基座材質，且具有7 0%或更高 的多孔性之矽作爲發光材質。 本發明所使用的陽極化是被實施在一 H F水溶液中， 或H F及醇類的水溶液中。 作爲使用在本發明淸潔步驟中的醇類，可使用甲醇、 乙醇及丙醇。淸潔溶液可以是任何含有重量百分比至少4 %，且最好是1 0 %的醇類。 在以含有醇類的淸潔溶液淸潔之後，有孔體最好是以 純水淸潔（或沖洗）。在此，如上述它可以被以具有超音 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)-i ^ w ^ —K ---- Order --------- line I Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -11-487984 A7 B7 Description of the invention (9) 3 4 Rotating chuck holding Device 3 8 upper nozzle 3 9 lower nozzle 4 1 alcohol cleaning unit 4 2 pure water cleaning unit 5 1 cover 5 2 exhaust path 6 1, 6 2 electrolytic cell 6 3 negative electrode 6 4 positive electrode 6 5, 6 6 〇 环 6 7 Anodizing solution 6 9 Opening 8 0 Electrolyte solution 8 2, 8 5 Pure water 8 3 Clean solution 8 4 Layer 1 0 2 Substrate holding member (please read the precautions on the back before filling this page)- ----- ^ ---- Order --------- Line 1 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 10 3 Opening 104 Ring-shaped base suction pad 105 Extraction line 106 Conveying robot 2 0 8 Waste liquid outlet 209 Electrolyte solution The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -12- 487984 A7 B7 V. Description of the invention (10) 3 0 1 Loader 3 0 2 Anodizing Tank 3 0 3 Cleaning tank 3 0 4 Rotary dryer 3 0 5 Unloader 3 0 6 Carriage conveying robot 3 0 7 The substrate is conveyed piece by piece Robot 3 0 8 System 3 0 9 Robot Dryer 3 1 0 First cleaning tank 6 0 1 Base 6 0 2 Hole 6 0 4 Air layer 6 0 6 Dry matter 7 0 1 Base 7 0 2 Hole (Please read the back first (Please note this page before filling in this page) ---- l · · Order --------- line * Detailed description of the preferred embodiment printed by the Ministry of Economic Affairs, Smart Finance and Employee Cooperatives-Figure 1 is a Flow chart of the cleaning method of the present invention. First, in step S1, a non-porous body is subjected to anodization to form a porous body. (A perforated body 意思 here means the material that is entirely perforated and the material with the perforated layer described below.) Next, in step S2, clean the perforated body by immersing it in 10 0% alcohol or alcohol-based aqueous solution, by adding 100% dropwise This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -13- 487984 Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative prints A7 B7 V. Description of the invention (11) Alcohol or alcohol solution to porous body, or by exposing the porous body to the vapor of 100% alcohol or alcohol solution. Secondly, in step S3, the porous body is cleaned with pure water. In this step, the porous body can be immersed in pure water, pure water can be added dropwise to the porous body, or the porous body can be exposed to water vapor. Here, it is preferable to clean the perforated body with pure water having ultrasonic energy by using an ultrasonic vibrator. Then, in step S4, the perforated body is dried to complete a series of cleaning steps. Generally, in the case where a semiconductor such as silicon is anodized to form a porous body, anodization is generated by applying an electric field to a silicon substrate in an H F aqueous solution having a relatively high concentration. The silicon surface facing the negative electrode (the silicon surface is roughly used as an anode) is etched so as to extend along the direction of the electric field to form fine holes, making it a porous structure. The pores formed have a size distribution from tens of nanometers to hundreds of nanometers, and have a size of 1001. 〇 r e s / cm2 or higher. The size and density of the pores vary depending on the anodizing conditions, that is, the concentration of hydrofluoric acid, the anodizing voltage, or the anodizing current, and the specific resistance of the conductive form or substrate. The porosity can be controlled by adjusting these conditions, whereby most of the structures suitable for luminescent materials or most of the porous bodies suitable for the base structure for crystal film growth can be generated quite easily. However, even if the perforated bodies are obtained as designed correctly, they may cause structural changes in the perforated bodies or may be included in secondary contamination unless they are sufficiently cleaned after anodizing. Figures 2 to 5 show that this paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ---------------- K ---- Order --- ------ Line m I (Please read the note on the back? Matters before filling out this page) -14- 487984 Α7 Β7 V. Description of the invention (12) The figure of the state of the inside of the hole with the hole body. (Please read the precautions on the back before filling in this page) Such structural changes and secondary contamination are caused by, as shown in Figure 2, the HF remaining in the porosity and gradually evaporating as a gas, as described above. 8 0 in aqueous solution. Therefore, there is a need for a cleaning method that does not allow any anodizing solution H F aqueous solution 80 to remain in the pores. Reference numeral 8 1 indicates the hole wall with the hole body. If the substrate is only cleaned with pure water after the anodization is completed, although the H F component on the surface of the porous layer can be removed, it is difficult to remove the H F remaining in the porosity. As shown in FIG. 3, this is because the surface of the layer of the porous body becomes hydrophobic due to its contact with the HF aqueous solution 82, and even after it is rinsed with water, it has changed to water. It is difficult to penetrate into the holes. Specifically, in measuring the change in specific resistance of pure water over time, the porous body that has been anodized in pure water is immersed, and a phenomenon occurs here: the 电阻 of the specific resistance does not return to the original 値. This is because H F that has gradually evaporated in the pores is dissolved in pure water at a low rate. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in order to clean the inside of the hole, the experiment also needs to replace the anodized solution in the tank with pure water at least in experiments. Within three minutes after the anodization is completed, Rinse thoroughly with water. However, such a procedure reduces the degree of freedom of the cleaning process and makes the design of the cleaning unit restricted. The inventor of this case repeated different experiments. As a result, they found that pure water washing with 100% alcohol or an alcohol aqueous solution can easily replace the anodized solution in the hole with a cleaning solution, and thus has achieved the present invention. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -15-487984 A7 B7 V. Description of the invention (i3) When a porous body is immersed in a cleaning solution containing alcohol, such as As shown in FIG. 4, the cleaning solution 83 penetrates into the minute holes and becomes mixed with the anodizing solution remaining in the holes. Then, even when the perforated body is exposed to the air like it, its surface is kept moist for a while. More specifically, the surface of the porous body is also covered with a layer 84 made of a cleaning solution or an anodizing solution. This porous body is once again immersed in pure water 85, as shown in FIG. 5, so that water 85 easily penetrates into the pores, so the anodizing solution 80 remaining in it can be replaced with pure water 85. After that, even if pure water 85 has remained in the pores of the pores, the water will naturally evaporate. In that process, it is only water that is evaporated, and therefore it rarely causes erosion or changes in the properties of the surrounding devices or the perforated structure itself. The porous body used in the present invention may include, for example, semiconductors of Si, Ge, GaAs, GaAlAs, SiC, SiGe, and C. In particular, porous silicon having a porosity of less than 70% is preferable as a base material for crystal film growth, and silicon having a porosity of 70% or more is used as a light-emitting material. The anodization used in the present invention is performed in an H F aqueous solution, or an H F and alcohol aqueous solution. As the alcohol used in the cleaning step of the present invention, methanol, ethanol, and propanol can be used. The cleaning solution may be any alcohol containing at least 4% by weight and preferably 10% by weight. After cleaning with a cleaning solution containing alcohol, the porous body is preferably cleaned (or rinsed) with pure water. Here, as mentioned above, it can be supersonic. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page)

----Κ----訂---------線 I 經濟部智慧財產局員工消費合作社印製 -16- 經濟部智慧財產局員工消費合作社印製 487984 Α7 一 Β7 五、發明說明（14) 波能量的純水淸潔，此超音波能量可以在6 Ο Ο Κ Η z到 2 Μ Η Ζ的範圍之間。如此可以更加改善以水取代η F的 效率。 在本發明的情形中，在陽極化完成之後，有孔體最好 在盡可能短的時間內從陽極化溶液移動到淸潔溶液，然而 ，決不被限制在三分鐘，且可以被延長到大約十分鐘。 以下將參考圖6說明使用於本發明中之一淸潔單元（ 陽極化及淸洗單元）。 圖6所示的淸潔單元被構成以便作爲一陽極化單元。 此單元被構成以便主要地包括：一電解槽6 1 ，此槽亦作 用爲一基底固持器且可以固持陽極化溶液與淸潔溶液；一 平板的負電極6 3設有許多孔洞；及一正電極6 4可相對 電解槽6 1上下移動。電解槽6 1是由氟碳形式的抗氟材 質例如四氟乙烯樹脂所製成的，且具有一開口 6 9在電解 槽6 1的底部。然後，沿著此開口 6 9的內側邊緣，一密 封構件6 5例如一基底吸引環被設置在電解槽6 1的底部 。基底吸引環6 5在其吸引部是扁平的，且在其平面形成 一真空溝紋（未顯示），此溝紋與一連通路徑2 2連通， 用於真空化/加壓其空間以真空吸引或釋放壓力一處理標 的物W °例如矽晶圓之處理標的物w，是被吸引且固持到 基底吸引環6 5在其下面周圍。在此狀態中，一電解質溶 液是從一供給噴嘴2 7注入電解槽6 1中作爲陽極化溶液 ，直到負電極6 3被浸入在電解質溶液中。負電極6 3是 由鉑平板所製成具有大致與處理標的物相同的直徑，以及 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） K----^--------- ·W (請先閱讀背面之注意事項再填寫本頁) -17- 487984 Α7 Β7 五、發明說明（15) 如那些藉由沖壓所製成的多數孔洞被製作在平板中’使得 反應副產品氣體例如像在陽極化期間所產生的氫氣可以被 移除。正電極6 4穿過電解槽6 2的開口進而與處理標的 物W的背面直接接觸。此正電極6 4決不直接接觸電解質 溶液，且因此是由鋁所形成的。正電極6 4被放置在一台 2 5上連同一升降機構2 4，且設有一連通路徑2 3，用 於真空化/加壓其空間以將處理標的物W真空吸引或釋放 壓力。 爲實施陽極化，正電極6 4是被藉由升降機構2 4保 持上升到最上的位置，且處理標的物W是被放置於其上。 連通路徑2 3是被真空化以藉由吸力吸引處理標的物W到 正電極6 4。正電極6 4下降以導致處理標的物W接觸電 解槽6 1的底部。然後，連通路徑2 2是被真空化以吸力 在其周圍吸引處理標的物W到密封構件6。在陽極化準備 好之後，H F水溶液經由供給噴嘴2 7被供給到電解槽 6 1中。在已經達到預定的量之後，施加一直流電壓跨接 負電極6 3與正電極6 4。此時，陽極化可以被持續當連 續地供給H F水溶液且允許它溢出。在圖6中，參考數字 2 6標示一溢出槽。 在完成陽極化之後，正電極6 4下降而且負電極6 3 亦拿出到電解槽6 1的旁邊。打開一排水管2 1 ，且陽極 化溶液6 7，被從那裡排出而使得電解槽6 1 —次倒空。 之後，含有醇類的淸潔溶液被經由供給噴嘴而供給。而且 此時，淸潔可以被實施而允許淸潔溶液溢出。淸潔溶、液供 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注咅？事項再填寫本頁)---- Κ ---- Order --------- Line I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-16-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 Α7 1Β7 V. Description of the invention (14) Pure water is clean with wave energy, and this ultrasonic energy can be in the range of 6 〇 Κ Η z to 2 Μ Η Z. This can further improve the efficiency of replacing η F with water. In the case of the present invention, after the anodization is completed, the porous body is preferably moved from the anodizing solution to the cleaning solution in the shortest possible time, however, it is by no means limited to three minutes and can be extended to About ten minutes. Hereinafter, a cleaning unit (anodizing and cleaning unit) used in the present invention will be described with reference to FIG. 6. The cleaning unit shown in Fig. 6 is configured to function as an anodizing unit. This unit is constructed so as to mainly include: an electrolytic cell 6 1 which also functions as a base holder and can hold anodizing solution and cleaning solution; a flat negative electrode 63 is provided with many holes; and a positive The electrode 64 can move up and down relative to the electrolytic cell 61. The electrolytic cell 61 is made of a fluorine-resistant material in the form of fluorocarbon such as tetrafluoroethylene resin, and has an opening 6 9 at the bottom of the electrolytic cell 61. Then, along the inner edge of this opening 69, a sealing member 65 such as a base suction ring is provided at the bottom of the electrolytic cell 61. The base suction ring 65 is flat in its suction part, and forms a vacuum groove (not shown) on its plane. This groove communicates with a communication path 22 for vacuumizing / pressurizing its space for vacuum suction. Or release the pressure-the processing target W ° such as the processing target w of a silicon wafer is attracted and held to the substrate suction ring 65 around it underneath. In this state, an electrolyte solution is injected into the electrolytic cell 61 from a supply nozzle 27 as an anodizing solution until the negative electrode 63 is immersed in the electrolyte solution. The negative electrode 63 is made of a platinum flat plate with approximately the same diameter as the object to be treated, and this paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) K ---- ^ --- ------ · W (Please read the precautions on the back before filling this page) -17- 487984 Α7 Β7 V. Description of the invention (15) Most of the holes made by stamping are made in the plate 'Allows reaction byproduct gases such as hydrogen generated during anodization to be removed. The positive electrode 64 passes through the opening of the electrolytic cell 62 and directly contacts the back surface of the object W to be processed. This positive electrode 64 is never in direct contact with the electrolyte solution, and is therefore formed of aluminum. The positive electrode 64 is placed on a unit 25 connected to the same lifting mechanism 24, and is provided with a communication path 23 for vacuumizing / pressurizing its space to attract or release the pressure of the object W to be vacuumed. To perform anodization, the positive electrode 64 is kept raised to the uppermost position by the lifting mechanism 24, and the processing target W is placed thereon. The communication path 23 is evacuated to attract the processed object W to the positive electrode 64 by suction. The positive electrode 64 is lowered to cause the treatment target W to contact the bottom of the electrolytic cell 61. Then, the communication path 22 is evacuated to attract the treatment target W to the sealing member 6 by suction around it. After the anodization is prepared, the H F aqueous solution is supplied into the electrolytic cell 61 through the supply nozzle 27. After the predetermined amount has been reached, a DC voltage is applied across the negative electrode 63 and the positive electrode 64. At this time, the anodization can be continuously and continuously supplied with the H F aqueous solution and allowed to overflow. In Fig. 6, reference numeral 26 designates an overflow slot. After the anodization is completed, the positive electrode 64 is lowered and the negative electrode 63 is also pulled out beside the electrolytic cell 61. A drain pipe 2 1 is opened and the anodizing solution 6 7 is drained from there to empty the electrolytic cell 6 1 once. After that, the cleaning solution containing alcohol is supplied through a supply nozzle. Also, at this time, cleaning can be performed to allow cleaning solution to overflow.淸 Clean solution, liquid supply This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the note on the back? Matters before filling out this page)

------^----訂-------—線 I 經濟部智慧財產局員工消費合作社印製 -18- 487984 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明（16) 給噴嘴可以獨立於H F溶液噴嘴而設置。 接著，排水管2 1再一次被打開以排出含有醇類的淸 潔溶液，且之後純水經由供給噴嘴2 7被供給進入電解槽 6 1。最好是隨意地裝附一超音波振動器到供給噴嘴2 7 或電解槽6 1上，使得純水淸潔溶液可以被具有超音波能 量。 在以純水淸潔之後，排水管2 1被打開以排出純水。 經由連通路徑2 2的真空吸引被停止，且正電極6 4上升 ，在此處經由連通路徑2 3的真空吸引是被停止以拿出處 理標的物W。 圖6說明正電極6 4是在下降位置的狀態，以便輕易 了解單元的結構。在陽極化期間，它是在接觸處理標的物 W的背面之位置。 圖7顯示一有孔體淸潔系統，作爲本發明中所使用之 另一範例。圖7中所示的系統具有一陽極化單元4 0，此 單元大致上具有與圖6所示的單元相同之結構，一醇類淸 潔單元4 1及一純水淸潔單元4 2。 在陽極化在陽極化單元4 0中被實施之後，已經被陽 極化的處理標的物W，在電解槽中的陽極化溶液被完全排 出之後，是藉由一水平輸送機器人（未顯示）被移動到醇 類淸潔單元4 1。在一醇類淸潔槽3 3中，一旋轉夾頭固 持器3 4真空吸引處理標的物W在其背面以將它固持。在 那樣的狀態下，含有醇類的淸潔溶液是被經由一設於處理 標的物W上之噴嘴3 5所供應。在此單元中，含有醇類的 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） -----------------^----訂---------線 m m (請先閱讀背面之注意事項再填寫本頁) -19- 487984 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（l7) 淸潔溶液是被射出朝處理標的物w當將它以一預定的轉數 旋轉時。因此，產生以純水淸潔。 其次，處理標的物W，在此標的物上已經完成以醇類 淸潔，是被藉由一水平輸送機器人移動到純水淸潔單元 4 2。處理標的物W被配置以便藉由外力以一基底夾頭 3 7緊密地固持在其周圍邊緣。然後，純水被經由一上噴 嘴3 8及一下噴嘴3 9供給。而且在此單元中，純水被射 出在上噴嘴3 8及下噴嘴3 9兩者外面，當旋轉處理標的 物W以一預定的轉數時。停止射出純水，處理標的物W可 以被進一步旋轉乾燥而持續其旋轉。 圖8顯示一個本發明所使用的純水淸潔單元。此單元 是圖7所示的純水淸潔單元4之一修改型，且是一單元具 有一電解槽3 6設有一密封可閉蓋5 1，使得在以純水沖 洗之後，由電解槽3 6及蓋5 1所界定的密封關閉空間可 以經由一排水路徑5 2被排空，乙實施旋轉乾燥而保持密 封關閉空間的內側真空。其中水成分仍殘留在孔洞中之處 ，它會不利地影響接下來的處理步驟。例如，當晶膜生長 被產生在有孔矽上時，水的追蹤量可以從有孔體的孔洞內 部蒸發且擴散進入一晶膜生長室以導致在晶膜生長膜上的 缺陷。爲了預防這件事，最後實施這樣的真空排氣法是相 當有效的。 圖9顯示本發明所使用的醇類淸潔單元。一淸潔槽 5 3其中設有一噴嘴5 4，經由此噴嘴供給含有醇類的淸 潔溶液之蒸氣。一處理標的物W被從槽5 3上插入，且含 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） IJ--------------l·---訂---------線· j~ (請先閱讀背面之注音3事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 487984 A7 B7 五、發明說明（18) 有醇類的淸潔溶液之蒸氣被經由噴嘴5 4供給，以蒸氣塡 滿槽的內側而實施淸潔。之後，處理標的物W可以被緩慢 地拿出槽外到外面乾燥的空氣，使得殘留在處理標的物W 中的醇類蒸發，因此可以乾燥處理標的物W。假如純水被 直接注射在具有非常高多孔性之有孔體上，例如，7 0 % 或更高的多孔性，或超音波水是被提供到此以實施物理淸 潔，則有孔體傾向破裂。於是，可以使用這樣的一個單元 ，藉此即使一個具有高多孔性的有孔體可以被淸潔而不會 損壞有孔體。具有7 0 %或更高多孔性的有孔矽最好是被 應用作爲一發光材質。相較與其中處理標的物是被僅以純 水淸洗在陽極化之後的習知情形，受到以醇類蒸氣淸潔及 在陽極化之後乾燥的那些標的物不會導致在有孔結構中的 改變。因此，材質可以穩定地維持發光強度一段很長時間 〇 上述中，說明一情形其中一含有醇類的溶液被使用作 爲淸潔溶液。然而在本發明中，亦可以使用醋酸以取代醇 類。 以下將說明一種用於製造無孔膜之處理及一種製造根 據本發明的接合基底之處理。 圖1 0是用於製造根據本發明的接合基底之處理的流 程圖。 首先，在步驟S 1 1中，無孔體1是被藉由陽極化處 理以至少在其表面上形成一有孔層。 在步驟s 1 2中，淸潔有孔層2是藉由將它浸入一 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 ·m (請先閱讀背面之注意事項再填寫本頁) -21 - 經濟部智慧財產局員工消費合作社印製 487984 A7 B7 五、發明說明（19) 1 0 0%的醇類或醇類水溶液中，藉由逐滴添加1 0 0% 的醇類或醇類水溶液到有孔層2，或藉由暴露有孔層2到 1 0 0 %的醇類或醇類水溶液的蒸氣中。在此步驟S 1 2 中，可以使用醋酸以取代醇類。淸潔法之一範例是如上所 述。 其次，隨意在步驟S 1 3中，有孔層2被以純水淸潔 。而且在此步驟中，有孔層2可以被浸入在純水中，純水 可以被逐地添加到有孔層2或者有孔層2可以被暴露在水 蒸氣中。在此，最好可以具有超音波能量的純水來淸潔， 藉由使用一個超音波振動器。然後，有孔層2是被乾燥以 完成一系列的淸潔步驟。以純水淸潔及乾燥的範例亦如上 所述。 其次，有孔層2在一低溫被氧化以在孔洞的內壁表面 上形成一薄氧化膜。 接著，在步驟S 1 4中，無孔層3被形成在有孔層2 上。此步驟S 1 4可以被產生在步驟S 1之前以在無孔體 1上形成無孔層3，且之後使得整個單晶矽從背面變成有 孔的。另一方面，陽極化亦可以被實施使得無孔體1的背 側被變成有孔以使無孔層3停留在表面側上。 其次，在步驟S 1 5中，一絕緣層4是被隨意地形成 在無孔層3的表面上，且如步驟S 1 6中所示，無孔層3 經由在它們之間的絕緣層4，被接合到分開備製的支撐基 座5上。 在步驟S 1 7中，產生一預處理爲了從因此所形成的 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -22- ------------0^,----l·---訂---------線· (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 487984 Α7 Β7 五、發明說明（20) 多層結構移除有孔層2。在其中無孔體1殘留如圖1 〇所 示的情形中，此被從多層結構移除藉由硏磨、硏光、拋光 或蝕刻。之後，未覆蓋的有孔層2被選擇地移除如步驟 S 1 8中所示，藉由以含有HF、H2〇2及水的蝕刻劑進 行濕飩刻（wet etching)。 另一方面，無孔體1可以被分離（步驟S 1 7)藉由 施加外力到多層結構，或藉由於其中產生一內部應力，以 便導致在有孔層2中或在其與上下層的介面的破裂。殘留 在無孔層3上的一些有孔層2可以被選擇性地移除（步驟 S 1 8 )藉由以如上述相同的方式蝕刻。 如此所獲得的接合基底可以進一步被隨意地受到在一 含有氫氣的還原空氣中之熱處理，以使其表面更加平滑。 由於有孔層幾乎可以不改變其有孔結構，由於H F或 H F水溶液仍然殘留在其中，所獲得的接合基底不會導致 任何微觀上不均勻的膜厚度，因此可以獲得高品質程度的 接合基底。 本發明所使用的有孔層2可以包括如上述例如S i ， Ge ，GaAs ，GaAlAs ，SiC，SiGe 及 C 的半導體。特別是，具有低於7 0 %多孔性的有孔矽是較 好的作爲用於晶膜生長的基座材質。更好的是，有孔層在 鄰接或鄰近於無孔層的部分可以具有不高於3 0 %的多孔 性。有孔層最好是可以具有從大約1 μ m到大約3 0 μ m的 厚度。 本發明所使用的陽極化是被實施在H F水溶液中，或 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 (請先閱讀背面之注意事項再填寫本頁) -23- 經濟部智慧財產局員工消費合作社印製 487984 A7 B7_ 五、發明說明（21) H F及醇類的水溶液。 作爲使用於本發明淸潔步驟中的醇類，可使用甲醇、 乙醇及丙醇。淸潔溶液可以是任何含有至少重量百分率4 %醇類的溶液。 在以含有醇類的淸潔溶液淸潔之後，有孔體最好可以 純水淸潔。在此，如上所述，它可以被具有超音波能量範 圍從6 Ο Ο Κ Η Ζ到2 Μ Η ζ的純水淸潔。如此可以更增 進以水取代H F的效率。 在本發明的情形中，在陽極化完成之後，有孔體最好 可以在盡可能短的時間之內從陽極化溶液移動到淸潔溶液 ，然而，決不被限制到3分鐘，且可以被延長到大約1 0 分鐘。 本發明中所使用的無孔層最好可以包括，例如像S i 及Ge的元素半導體層、例如GaAs ，GaAlAs ， S i C及S i G e的複合半導體。明確地說，單晶矽層、 多晶矽層及非晶矽層是較佳的。在無孔層中，亦可以形成 裝置或例如MOSFET、ρ — η接頭、p — i—n接頭 及Μ I S接頭的半導體接頭。 作爲隨意設置的絕緣層，最好使用絕緣體或例如氧化 矽、氮化矽及氮氧化矽的電介質層。此層可以被形成作爲 一單晶層或是由相似材質或不同材質所形成的多數層。 本發明所使用的支撐基座可以包括例如矽的半導體、 例如鋁或不銹鋼的金屬，例如氧化鋁的陶瓷，及例如石英 玻璃及塑膠膜的絕緣材質。這些支撐基座亦可以是在已經 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 i i (請先閱讀背面之注意事項再填寫本頁) -24- 經濟部智慧財產局員工消費合作社印製 487984 Α7 Β7 五、發明說明（22) 形成不同於構成支撐基座本身材質的表面上之材質。在其 中接合S 0 I基底被產生的情形中，絕緣層最好可以是被 形成在無孔層的表面上且之後被接合到一矽晶圓或一石英 晶圓。而且，支撐基座可以是一僅用於分離的架子（jig ) 〇 爲了選擇性地移除有孔層，使用一触刻劑，此蝕刻劑 可以達到蝕刻速率至有孔體至少1 0 0 0 0次，且最好至 少1 0 0 0 0 0次到無孔體的蝕刻率。在有孔矽與無孔矽 的情形中，最好使用含有H F及一氧化劑之溶液，例如藉 由氫氟酸、硝酸及醋酸的混合溶液，氫氟酸、過氧化氫水 及水的混合溶液，氫氟酸、醇類及水的混合溶液，以及氫 氟酸、過氧化氫水及醇類的混合溶液。 (陽極化及淸潔單元） 在本發明中，圖6到9所顯示的單元可以被使用作爲 陽極化及淸潔的單元。除此之外，亦可以使用圖1 1到 1 4所顯示的陽極化及淸潔單元。 圖1 1顯示一個固持器及一基底輸送機器人，這些是 被使用在本發明的一陽極化單元中。圖1 2顯示陽極化單 元。圖1 3及1 4顯示本發明中所使用的陽極化及淸潔系 統。 圖1 2所示的單元是一個單元，藉此單元三個作爲處 理標的物的基底可以一次被陽極化。如圖1 1所示，在陽 極化單元中的一基底固持構件（以下稱爲 > 固持器〃） 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------:----訂---------線 • (請先閱讀背面之注意事項再填寫本頁) -25- 經濟部智慧財產局員工消費合作社印製 487984 A7 B7 五、發明說明（23) 1 0 2，是一正方形平板大致在其中心設有一圓形開口 1 0 3。沿著開口 1 0 3，埋置一環型基底吸引墊片（以 下稱爲〜墊片〃）1 04。一溝紋被產生在墊片中在其表 面上，且溝紋內部透過一個從墊片背部的抽氣線路1 0 5 可以被導致成真空。參考數字1 0 6 a及1 〇 6 b每個標 示一基底輸送機器人，此機器人是成對地操作。首先，機 器人1 0 6 a藉由真空吸引固持一處理標的物W在其背面 ，且致使它接近固持器1 0 2以便平行其表面。其次，機 器人1 0 6 b被從固持器1 〇 2的開口 1 0 3穿過經由扭 轉成L形的部分，且等待處理標的物W接近。機器人 1 〇 6 b具有如機器人1 0 6 b般的真空吸引功能。在處 理標的物W的背面已經接觸機器人1 〇 6 b的前端時，機 器人1 0 6 b藉由吸力固持處理標的物W，且機器人 1 〇 6 a釋放其吸力以向上離開。接著，接器人1 〇 6 b 如圖中所示朝右移動，使得處理標的物W的背面接觸墊片 1 0 4。在此，溝紋的內部在墊片1 〇 4中是被保持真空 藉由抽氣線路1 0 5，且墊片1 0 4藉由吸力固持處理標 的物W。機器人1 〇 6 b穿過開口 1 〇 3且向上離開。因 此，處理標的物W被藉由固持器1 〇 2所固持。而且，當 處理標的物W從此處脫離時，則上述操作被反向進行。 如圖1 2所示，陽極化單元的一陽極化槽2 1 0在其 兩端是被裝配與一負電極2 0 6 a及一正電極2 0 6 b。 三個固定器1 0 2是被串聯配置以這樣的方式使得它們被 固持在這些成對配置的電極之間。圖1 2顯示一狀態，其 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 s* (請先閱讀背面之注意事項再填寫本頁) -26- 487984 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（24) 中處理標的物w已經藉由每個固持器1 0 2所固持。在電 極2 0 6 a和2 0 6 b與固持器1 0 2之間以及在固持器 1 0 2之間的空間，每個是被塡充以一電解質溶液2 0 9 ，且被個別地以處理標的物分離。陽極化被實施在此狀態 中藉由施加一直流電壓跨接電極206a及206b。在 陽極化完成之後，打開廢液出口 2 0 8，且電解質溶液 2 0 9經由此出口被排出。這些固持器1 0 2功用類似圖 6中所示的單元之電解槽6 1底部。 如圖1 3所示，與上述陽極化單元安裝的陽極化系統 具有一載入器301、一陽極化槽302、一淸潔槽 303、一旋轉乾燥器304及一卸載器305，如圖中 所示以此順序從左排列。在此配置的方向中，設有一基底 (晶圓）逐片輸送機器人3 0 6及一托架輸送機器人 3 0 7。基底逐片輸送機器人3 0 6進一步是由圖1 3所 示的兩個部分3 0 6 a及3 0 6 b所組成。淸潔槽3 0 3 設有循環含有至少一種選自醇類及醋酸的水溶液之功能， 以及供給純水的功能。此系統亦具有一系統3 0 8，其中 在陽極化槽中的電解質溶液是被循環地過濾。 放置在載入器3 0 1中作爲處理標的物W的基底是被 藉由水輸送機器人3 0 6設置在固定器1 0 2中，且是被 放置在陽極化槽3 0 2中。 在陽極化槽3 0 2中已經受到陽極化的基底是被藉由 機器人3 0 6帶出固持器1 〇 2外面，且被輸送到淸潔槽 3 0 3。在淸潔槽3 0 3中，基底被以含有至少一種選自 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ~ -----------------^----訂---------線^^· • - (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 487984 A7 B7 五、發明說明（25) 醇類及醋酸的水溶液所淸潔。接著，它們被以純水在相同 的槽中淸潔。 借助於機器人3 0 7所淸潔的基底是被連同托架一起 輸送到機器人乾燥器3 0 9，且在那裡一次被乾燥。 接著，基底被逐片從托架帶出，且然後在旋轉乾燥器 3 0 4中被旋轉乾燥。 已經被乾燥的基底被送出到卸載器3 0 5。 因此，從步驟S 1 1到步驟S 1 3的處理是被整批地 實施。 圖1 4顯示一個圖1 3中所示系統之修改型，其中另 一個淸潔槽是被添加到僅設於圖1 3所示系統中的淸潔槽 。第一淸潔槽310是一槽具有循環含有醇類及/或醋酸 的水溶液之功能，且具有一過瀘系統。在第二淸潔槽3 0 3中，只有純水被供應且實施用水的最後淸潔。 在如圖1 3及1 4所示本發明的系統中，被構成像圖 6到9，1 1及1 2所示的那些單元之單元可以被使用作 爲陽極化槽或淸潔槽。在圖1 4中，其他參考數字標示與 圖1 3所示相同的參考數字。 (實施例]) 再一次參考圖1及其他圖形，將採用矽的情形作爲範 例，詳細說明根據本發明用於製造無孔膜及接合基底之處 理。 單晶矽晶圓是被備製作爲無孔體1 (圖1 〇 )，每個 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------0^----l·---訂---------線· • t (請先閱讀背面之注意事項再填寫本頁) •28- 487984 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（26) 晶圓表面是被製成多孔深度從大約1 μ m到大約3 Ο μ m ’ 藉由圖6或1 2所示的陽極化單元，因此一多孔單晶矽層 被形成作爲有孔層2。這裡所形成的有孔層最好是可以被 製成具有從大約5 %到7 0 %的多孔性，且更好是大約從 1 0 %到5 0 %。而且，在陽極化過程中最好改變陽極化 電流密度，H F濃度等，使得有孔層可以被製成具有至少 兩層相互多孔性不同之多層結構。 接著，使用圖7到9及1 3或1 4中所示的系統，其 表面已經被製成多有的矽晶圓被以一淸潔溶液淸潔，此淸 潔液是由含有醇類及/或醋酸在至少重量百分率4 %的濃 度之水溶液所組成的。之後，淸潔溶液被以純水取代而淸 潔矽晶圓，接著是乾燥。 · 如此所淸潔的矽晶圓每個被隨意受到在大約2 0 0 °C 到大約6 0 0 °C的熱處理，以氧化在有孔層中孔洞的內壁 ，以在內壁表面上形成氧化膜。孔洞壁仍然主要由矽所組 成。 在有孔層2上，由單晶矽所組成的無孔層3是被形成 藉由C V D、濺射、分子束外延或液相外延。 在無孔層3的表面上，矽氧化膜是被隨意地形成作爲 絕緣膜4。 絕緣膜4的表面及單晶矽晶圓的表面或由石英玻璃所 組成的支撐基座是被導致接觸以將它們結合。在其中絕緣 膜4沒有形成的情形中，無孔層3是被接合到支撐基座5 。爲了增進其接合強度，如此藉由接合所形成的多孔結構 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 **· (請先閱讀背面之注意事項再填寫本頁) -29- 487984 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（27) 可以受到在惰性氣體的空氣中或氧化氣體的空氣中之熱處 理，或受到陽極結合。 從多層結構，仍未被製成有孔的矽晶圓1是被藉由硏 磨、硏光或在背側R I E ( reactive ion etching活性離子 蝕刻法）而移除，此背側是正對於結合面側。 未覆蓋的有孔層2被進一步如上述以鈾刻劑選擇地鈾 刻。因此’在支撐基座5上獲得一具有無孔膜的結合基底 0 藉由陽極化使得矽基底變成有孔的處理，亦即形成孔 洞於其中的處理，是被實施在例如H F的水溶液中。對於 此處理，在矽晶中孔洞的存在被知道是不可少的，且反應 機制被認爲如下： 首先，在H F水溶液中已經進行電解的矽基底，其中 的孔洞是被感應到負電極側的表面。結果，S i — Η鍵的 強度增加，該S i - Η鍵是以在表面補償未鍵結端的形式 存在。此時，在H F溶液中的氟離子與S i - Η鍵產生親 核性的反應以形成S i - F鍵。由於此項反應，一電子被 问時釋放到正電極側並產生氫氣分子。因爲S i - F鍵的 極化特性，在表面附近的S i - S i鍵變弱。這樣微弱的 S i — S i鍵與HF或水進行反應，且在晶面上的S i原 子變成S i F 4而被從晶面釋放。結果，在晶面上產生空洞 (凹面），與孔洞進行反應的電場之分布優先地發生在此 部位，使得如此的表面異質性（heterogeniety )擴大且矽 原子的蝕刻接連地沿著電場進行。順便一提，用於陽極化 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 (請先閱讀背面之注意事項再填寫本頁) -30- 經濟部智慧財產局員工消費合作社印製 487984 A7 B7 五、發明說明（28 ) 中的溶液是不被限制爲H F水溶液，而可以是其他電解質 溶液。 在陽極化步驟中矽的蝕刻是被藉由下列反應體制說明 〇 S i + 2HF+(2 — n)e+—S i F2+2H + +n e- 2SiF2— Si+SiF4 S i F4+2HF->H2S i Fe 亦即，與氫氟酸的反應導致矽化合物H 2 S i F 6的形 成，而使得矽被蝕刻。上述反應體制液顯示Η 2 S i F 6以 一較大的量隨著氟化氫濃度的增加而形成。此H2S i F6 具有特性在於：它幾乎不與酸（包括氫氟酸）或強鹼溶液 起反應，亦即，很少溶解於其中。 陽極化反應之進行亦導致在基底表面形成數十到數百 埃的孔洞，且孔洞向前沿著電場方向延伸。亦即，電解質 溶液（氫氟酸水溶液）進入孔洞中且在孔洞的頂端導致反 應。然後，即使當電場消失，氫氟酸溶液被侷限於其中的 孔洞隨機地產生。在此階段所討論的是：被侷限在孔洞中 的氫氟酸水溶液持續反應即使在電場已經消失之後，繼續 形成Η 2 S i F 6。其中因而形成的Η 2 S i F 6黏附到孔洞 內壁，有孔矽層選擇性蝕刻之處，在過程中最後實施，變 得不均勻。 在有孔層的選擇蝕刻中，欲被留下未被蝕刻的無孔層 及欲被移除的有孔層，兩者在許多情形中是相似於單晶矽 的。因此，雖然化學蝕刻的速率原則上應該相等於，但是 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 (請先閱讀背面之注意事項再填寫本頁) -31 - 經濟部智慧財產局員工消費合作社印製 487984 Α7 Β7 五、發明說明（29) 已經浸泡進入有孔層的孔洞中之蝕刻劑鈾刻孔動的壁表面 ，使得有孔層進而不僅從層表面而且從內部被鈾刻。因此 ，有孔體的蝕刻處於一種整個層完全地破壞的情形中。 於是，爲了均勻地蝕刻有孔層，必須保持Η 2 S i F 6 以免其在孔洞中隨機產生。爲此目的，盡可能地以沒有鈾 刻作用的液體去取代輕易殘留在孔洞中的氫氟酸是很重要 的。而且，爲了均勻地移除有孔層，最好是在有孔層的孔 洞內壁上形成氧化膜，亦最好是保持Η 2 S i F 6不要形成 於此處。 圖1 5 A到1 5 D圖形地顯示有孔層中的孔洞內部是 處在如何狀態中，當以純水淸潔且被乾燥在陽極化被完成 之後。 圖1 5 A顯示有孔層的剖面，在陽極化完成之後它被 立刻帶出空氣之後，。孔洞6 0 2是被形成由於基底 6 0 1的陽極化，且電解質溶液8 0殘留在孔洞中。如上 述，電解質溶液在許多情形中是H F及醇類的混合溶液。 圖1 5 Β顯示孔洞內部是處在如何的狀態中，在有孔 層已經在留在空氣中幾分鐘。在電解質溶液8 0中的水成 分及醇類成分部分已經蒸發，且H F水溶液仍處在殘留在 孔洞深處被聚集的狀態中。 圖1 5 C顯示有孔層是如何被以純水8 2淸潔的。 一般，液體藉由毛細作用進入孔洞且被與黏稠的H F 水溶液混合。接著氫氟酸朝孔洞的外側上擴散，以變成逐 漸被孔洞中的純水所取代。因此，產生了淸潔作用。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 (請先閲讀背面之注意事項再填寫本頁) -32- 487984 A7 ____ B7 五、發明說明（3〇) 在此階段中’其中液體藉由毛細作用進入孔洞中的進 入深度Η被藉由下列方程式表示。 (請先閱讀背面之注意事項再填寫本頁) Η=2γ· c 〇 sG/apg 經濟部智慧財產局員工消費合作社印製 其中γ是表面張力；Θ是液體相對於基底之接觸角；a 是有孔體的孔洞大小；P是矽體之密度；且g是重力加速度 。在此階段中，有孔層的表面由於氫氟酸而處於疏水的狀 態，且因此具有一個非常大的接觸角Θ。因此，水的進入深 度Η幾乎是零。亦即，用於淸潔的純水8 2很少能進入孔 洞6 0 2中。爲此原因，必須形成一空氣層6 0 4在靠近 孔洞6 0的表面。一旦此情況已經發生的話，即使當在以 純水淸潔之後，水被試著藉由旋轉乾燥器等器具而移除時 ，在孔洞6 0 2中的氫氟酸是不被水所取代而在濃度上越 變越高。最後殘留在孔洞6 0 2中的溶液完全地乾燥，使 得如圖1 5 D中所示，第二產物乾燥物質6 0 6黏著於孔 洞壁表面。此乾燥物質6 0 6是上述的H 2 S i F 6。在圖 1 5 D中，其中說明乾燥物質6 0 6處於黏著到所有孔洞 之狀態。實際上，它僅黏著部分的巨大孔洞，或者具有不 同厚度用於每個孔洞的乾燥物質6 0 6可以產生而變得不 均勻。 另一方面，圖1 6到1 6 C圖形地顯示有孔層中的孔 洞內部是處於何種狀態，當在陽極化完成之後，以含有醇 類及/或醋酸的水溶液淸潔之後時。 圖1 6 A顯示有孔層的剖面，在陽極化完成之後它立 刻被拿出於空氣中之後。參考數字7 〇 1標示一基底； -33- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 487984 A7 B7_ 五、發明說明（31 ) 7 0 2標示孔洞；且8 0標示一電解質溶液。 圖1 6 B顯示有孔層如何被以含有醇類及/或醋酸的 水溶液淸潔。由於作用如同表面活性劑之醇類及/或醋酸 ，所以上述接觸角Θ很小致使溶液可以輕易地進入孔洞。因 此，含有醇類及/或醋酸的水溶液，且電解質溶液8 0快 速地彼此混合。然後，可以充分地實施以水的淸潔作用， 使得電解質溶液8 0的濃度被充分地降低且幾乎所有在孔 洞中的電解質溶液被水所取代。然後被以一旋轉乾燥器等 器具乾燥，因此如圖1 6 C所示，可以獲得一有孔矽層其 中任何歸因於H F的第二產品是存在於孔洞中。 (實施例2 ) 將採用矽的情形作爲範例，詳細說明根據本發明用於 製造無孔膜及接合基底之處理。 單晶矽晶圓被備製作爲無孔體1，每個晶圓表面藉由 圖6或1 2所示的陽極化單元被製成有孔的以深度大約從 1 μ m到大約3 Ο μ m，因此有孔單晶矽層被形成作爲有孔 層2。這裡形成的有孔層最好是被製成具有從大約5 %到 7 0 %的多孔性。而且，在陽極化過程中，陽極化電流密 度、氫氟酸溶液等等被改變，使得有孔層可以被製成以具 有一至少兩層的多層結構，此結構具有在基底內側高於在 表面的多孔性。 接著，使用圖7到9及1 3或1 4的系統，其表面已 經被製成多孔的矽晶圓被以一淸潔溶液淸潔，此淸潔溶液 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 •- (請先閱讀背面之注意事項再填寫本頁) -34- 經濟部智慧財產局員工消費合作社印製 487984 A7 B7 五、發明說明（32) 是由含有濃度至少重量百分率4 %的醇類及/醋酸之水溶 液所組成。之後，淸潔溶液被以純水取代以淸潔矽晶圓， 接著是乾燥。 如此淸潔的矽晶圓每個被隨意地受到在大約2 0 0 °C 到大約6 0 0 °C的熱處理，以氧化在有孔層中的孔洞內壁 ，以在內壁表面形成氧化膜。 在有孔層2上，由單晶矽所組成的無孔層3是被藉由 C V D、濺射、分子束外延或液相外延所形成。 在無孔層3的表面上，一矽氧化膜是被隨意地形成作 爲絕緣層4。 絕緣層4的表面及單晶矽晶圓的表面或由石英玻璃所 組成的支撐基座5是被導致接觸以將它們接合。爲了增進 其接合強度，合成的多層結構可以受到在惰性氣體的空氣 中或氧化氣體的空氣中之熱處理，或受到陽極結合。 然後，例如楔子或葉片的區分構件是被插入以區分多 層結構成爲兩部分。因此，有孔層，具有低機械強度，被 破裂在其內部或介面，且多層結構是被區分成兩部分。例 如液體及氣體的一流體可以被射到多層結構的側面以在物 理上區分多層結構。另一方面，多層結構可以被光照射以 產生熱於其中，或者可以被從外側加熱，使得在多層結構 中內部應力可以被減少，且藉此所產生的力量可以被使用 以區分多層結構。 由於這樣的區分，無孔層進而被輸送到支撐基座上。 由於有孔層2的殘餘層存在於無孔層上，所以此層被以上 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 •·· (請先閱讀背面之注意事項再填寫本頁) -35- 487984 A7 B7 五、發明說明（33) (請先閱讀背面之注意事項再填寫本頁) 述蝕刻劑選擇性地蝕刻。根據本實施例，任何不想要的第 二產物不會殘留在有孔層的孔洞中，且因此無孔層在蝕刻 之後可以沒有任何不均勻的膜厚度。 然後，在支撐基座上的無孔層可以被隨意地受到在含 有氫氣的還原氣體中之熱處理，以使表面平滑且亦朝外擴 散及移除含在無孔層中的硼等等。 因此，可以獲得具有無孔層的接合基底，此基底最好 是作爲一 SO I基底。 (實施例3 ) 將採用矽的情形作爲範例，詳細說明根據本發明用於 製造無孔膜及接合基底之處理。 單晶矽晶圓被備製作爲無孔處理標的物，這些晶圓每 一個受到陽極化以使用圖6或1 2所示的陽極化單元，而 形成如圖1 0中步驟S 1 1所示的有孔層2。 經濟部智慧財產局員工消費合作社印製 作爲陽極化的條件，首先，使用氫氟酸及乙醇的混合 溶液，一低多孔性、具有從5 %到3 0 %的多孔性及從1 μ m到2 9 μ m厚度的第一有孔層可以在低電流密度下被形 成。然後，在改變到高電流密度之後，一高多孔性、具有 從3 0 %到7 0 %的多孔性及從1 n m到3 μ m厚度的第二 有孔層可以被形成在第一有孔層之下。 其次，如圖1 0中之步驟S 1 2所示，使用圖7到9 及1 3或1 4的系統以實施淸潔。因此，具有彼此不同多 孔性的雙層結構之有孔矽層2的孔洞內部被以含有醇類及 -36- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 487984 經濟部智慧財產局員工消費合作社印製 A7 _____B7 五、發明說明（34 ) /或醋酸的淸潔溶液所淸潔。在其中低多孔性層被形成在 表面側上的情形中，本發明的淸潔法是特別有效的。 之後，如圖1 0中之步驟S 1 3所示，有孔矽層2被 以純水淸潔，接著是乾燥。 有孔矽層2在氧化氣體中受到大約2 0 0 °C到大約 6 0 0 °C的熱處理，以在孔洞內壁上形成氧化膜。 形成於其孔洞內壁已被氧化之有孔矽層2上的氧化膜 ’是被以稀釋的氫氟酸移除。在此階段，在孔洞內壁上的 氧化膜之較大部分仍處於殘留狀態。 在每個有孔矽層2已形成的表面上之晶圓是被設置在 一晶膜生長設備中，且有孔矽層2是被預烘在一氫氣氣體 中溫度上升至9 0 0 °C到1 0 0 0 °C。 例如S i Η 4的矽氣體是被引入以塞住有孔層2的表面 孔洞。一^旦砂氣體的引入停止’且熱處理是被產生在氯氣 氣體中溫度上升至1 0 0 0 °C到1 2 0 0 °C時，則例如 s i H2C 1 2的矽氣體被引入以實施晶膜生長在溫度降至 9 0 0 °C到1 〇 〇 〇 °C，在其孔洞內壁已被氧化之有孔矽 層2上形成一無孔層3。 形成一絕緣層在無孔層3上。 所形成的絕緣層是被接合到支撐基座5以形成一多層 結構，接著是在1 0 0 0 °C到1 2 0 0 °C的熱處理。 一個由樹脂或金屬所製成的楔子是被插入到多層結構 的側面以導致多層結構的有孔層被破裂在其側面。 由液體或氣體所組成的液體是被射入多層結構的側面 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 -V (請先閱讀背面之注意事項再填寫本頁) -37- 經濟部智慧財產局員工消費合作社印製 487984 Α7 Β7 五、發明說明（35) 以導致有孔層被更進一步朝內破裂。 因此，多層結構在高多孔性的第二有孔層與低多孔性 的第一有孔層之間的介面被區分。 低多孔性第一有孔層，此層具有氧化膜在其孔洞內壁 及殘留在輸送到支撐基座5側的無孔層3上，是被藉由蝕 刻等方式移除。由於在孔洞中的H F在陽極化之後已經藉 由淸潔被完全地移除，所以殘餘的有孔層可以被均勻地移 除。 無孔層3的表面是被藉由氫氣退火等方式而變成平滑 〇 如此所獲得的無孔層3可以具有平滑的表面而沒有任 何不均勻的膜厚度。 範例 (例1 ) 作爲處理標的物的矽晶圓是被設置在圖6所示的單元 中，且作爲一電解質溶液，藉由以體積比1 : 1 : 1混合 HF重量百分率濃度爲4 9%的氫氟酸、水及乙醇所備製 的一陽極化溶液，被供給到電解槽中。提供固定電流爲7 m A / c m 2的直流電壓被施加到晶圓1 0分鐘。結果，具 有多孔性爲2 0 %的一有孔矽層是被均勻地產在晶圓的一 表面上以厚度爲1 2μπι。 接著，電解質溶液被經由排水管排出，且藉由以體積 比1 : 1混合異丙醇及水所備製的淸潔溶液，是被從較上 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 (請先閱讀背面之注意事項再填寫本頁) -38 - 經濟部智慧財產局員工消費合作社印製 487984 A7 B7 五、發明說明（36) 部位注入到電解槽中。此淸潔溶液被維持1分鐘在塡滿電 解槽的狀態中，以實施淸潔，且之後淸潔溶液被排出電解 槽的外面。 其次，純水被從較上部位注入。純水被允許溢出以淸 潔（沖洗）晶圓2 0分鐘。然後晶圓被拿出，且藉由一旋 轉乾燥器乾燥。之後，此晶圓被留在氣體中一星期但是在 晶圓的有孔矽中看不到任何變化。 (比較例1 ) 在例1中，省略使用如上述含有醇類的淸潔溶液之淸 潔步驟，且在陽極化之後，以純水淸潔的晶圓立刻被旋轉 乾燥。所獲得的晶圓被留在空氣中1 〇小時。結果，晶圓 的有孔矽表面結構改變而變成混濁（cloudy )的。 (例2 ) 使用圖7所示的單元，陽極化被實施在如例1相同的 條件下。其次，在陽極化電解質溶液被完全排出之後，所 陽極化的晶圓藉由水平輸送機器人被移動到淸潔單元41 。晶圓被以5 0 0 r · p · m旋轉，而從噴嘴供給醇類（ 1 0 0 % )到晶圓以淸潔晶圓表面2 0秒。 接著，晶圓被藉由水平輸送機器人移動到純水淸潔單 元4 2，其中晶圓被以4 0 0 r · p · m旋轉，而從上噴 嘴及下噴嘴射出純水以淸潔晶圓1 5分鐘。在淸潔之後’ 純水的射出被停止，且晶圓被以8 0 0 r · p · m旋轉在 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -39- -----------------:----訂---------線 m I (請先閱讀背面之注音？事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 487984 A7 __ _ B7 五、發明說明（37) 相同單元中以實施乾燥。 以此方式淸潔的晶圓之有孔矽表面不會改變，即使在 它被停留在如例1中相同的方式一星期，且維持一個非常 穩定的狀態。 (例3 ) 在此例中，使用在圖7中的單元，陽極化，以醇類淸 潔、以純水淸潔及乾燥均以如例2相同的方式實施，除了 在以純水淸潔時，一超音波振動器被設立在上噴嘴頂端， 使得具有超音波振動的純水被供給到晶圓以更進一步增進 淸潔效果。 當在例2中，必須實施以純水淸潔1 5分鐘，獲得如 例2中相同的淸潔效果藉由淸潔1 0分鐘，因爲使用具有 超音波作用的純水。 (例4 ) 例4是以純水淸潔且使用圖8中所示單元乾燥之範例 〇 實施以醇類陽極化及淸潔在如例2中相同的條件下。 之後，使用圖8所示的單元基底被以純水淸潔。接著，在 基底被保持密封關閉在相同電解槽中的狀態下，它被旋轉 乾燥且同時藉由真空除氣而乾燥。結果，晶圓成分很少殘 留在孔洞中，且可獲得較穩定的有孔矽。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------：----訂---------線 • 鬌 (請先閱讀背面之注意事項再填寫本頁) -40- 經濟部智慧財產局員工消費合作社印製 487984 A7 B7 五、發明說明（38) (例5 ) 使用體積百分率1 0 %的氫氟酸之水溶液作爲電解質 水溶液，施加一電壓7分鐘以便在陽極化時提供一個電流 密度爲1 0 m A / c m 2的固定電流，而使得具有 0 · 〇 〇 7 Ω c m電阻的η型矽晶圓成爲多孔的。結果具 有大約7 0 %多孔性的有孔矽層被均勻地形成在晶圓的一 表面上以厚度爲1 2 μ m。此晶圓立刻被放進圖9所示的淸 潔單元中，以丙醇蒸氣實施醇類淸潔，且所淸潔的晶圓被 乾燥而將它朝上抽出時。 因爲使用這樣的淸潔及乾燥法，即使是高多孔性的有 孔矽可以被淸潔而不會導致在其結構中任何的變化。 如上述，在淸潔有孔體時，在陽極化之後，有孔體是 被暴露到淸潔溶液的氣體或含有醇類的淸潔蒸氣中。如此 可以防止有孔體本身的敗壞，此敗壞曾經被導致是因爲殘 留在孔洞中的陽極化溶液之不充分移除，防止周圍裝置的 侵蝕由於蒸發的陽極化溶液之成分，且亦防止藉由這些所 導致的沾污。 (例6 ) 作爲處理標的物，備製一 6英吋P型（0 · 0 1 -0.02Qcm)的矽晶圓（厚度爲625μιη)。使用圖 6中所示的單元，作爲一電解質溶液，藉由以體積比2 : 1混合氟化氫重量百分率濃度爲4 9%的HF與醇類所備 製的H F水溶液，被供給到陽極化槽中。陽極化電流被設 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------------------訂---------線 •· (請先閱讀背面之注意事項再填寫本頁) -41 - 經濟部智慧財產局員工消費合作社印製 487984 A7 B7 五、發明說明（39) 定在1mA/ cm2，且陽極化持續1 1分鐘以在砂晶圓的 表面上形成一多孔矽層。已經被陽極化的矽晶圓被浸入含 有重量百分率1 0%異丙醇的水溶液中，且停留3分鐘。 之後，矽晶圓被浸入在純水中1 0分鐘以將它淸潔，接著 是乾燥。 此矽晶圓在氧化爐中受到4 0 0 °C在氧氣氣體中1小 時之熱處理，以氧化有孔層的孔洞壁表面。其次，在有孔 層表面所形成的氧化膜是被以一 H F水溶液移除。然後， 晶圓被放入一 C VD系統中以在氫氣氣體中實施烘培，接 著藉由晶膜生長，在其表面已經被氧化的有孔層上形成一 0 . 3 μ m厚的外延層，此外延層是由無孔單晶矽所組成。 此外延層的表面是被氧化在1 0 0 0 t藉由氫氣燃燒以形 成一 0 · 2 μ m厚的矽氧化膜。接著，此膜被接合到一分開 備製的6英吋矽晶圓，接著藉由在1 1 0 0°C的氮氣及氧 氣氣體中2小時之熱處理以獲得一多層結構。其表面被製 成多孔的矽晶圓之背面，藉由一稱爲背硏磨器的硏磨器而 硏磨到深度大約6 1 5μιη，使得有孔矽層暴露出來。具有 未覆蓋的多孔矽層之多層結構被浸入一藉由以體積比1: 1 0 0混合氫氟酸及過氧化氫水所備製的溶液中，以藉由 選擇飩刻移除有孔矽層。 由於觀察所獲得的接合基底，任何如圖1 7所示之點 狀不均勻的膜厚度是觀察不到的。之後，接合基底受到氫 氣退火以獲得一 SO I基底，此基底具有一厚度爲〇 · 2 μ m的活性層及一厚度爲0 · 2 μ m的埋藏氧化膜（buried 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---------線 *― (請先閱讀背面之注意事項再填寫本頁) -42 - 487984 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（4〇) oxide film )，此基底是由無孔單晶矽所組成且具有一平滑 表面。 (例7 ) 備製如例6的相同晶圓，且受到在如例6之相同條件 下的陽極化。 在陽極化之後，晶圓被浸入在一充滿淸潔溶液的槽中 3分鐘，此淸潔溶液是由純水添加重量百分率1 5 %的異 丙醇所組成的。之後，淸潔溶液被排出槽外，且然後同樣 的槽被裝滿純水，以純水淸洗晶圓1 0分鐘。 之後，實施如例6的相同處理以選擇地蝕刻有孔矽層 〇 上述處理產生一 SO I基底具有一厚度爲0 · 2μιη的 活性層及一厚度爲0 · 2 μ m的埋藏氧化膜。 (I:匕較例2 ) 備製如例6的相同晶圓，且受到在如例6之相同條件 下的陽極化。已經被陽極化的晶圓被浸入純水中，且停留 1 0分鐘以產生淸潔，接著是乾燥。 其次，實施如例6的相同處理以選擇地蝕刻有孔矽層 〇 由於觀察所獲得的接合基底，如圖2 1所示的點狀膜 厚度1 1是可觀察到的，此點狀膜厚度直徑2 m m到7 m m且是一膜厚度小於周圍面的厚度大約2 m m到7 m m 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -43- -------------------訂---------線· *** (請先閱讀背面之注意事項再填寫本頁) 487984 A7 _B7 五、發明說明（41) 。如此產生的不均勻膜厚度不會輕易消失即使當晶圓之後 受到氫氣退火。 如上述，在淸潔有孔體時，在陽極化之後，有孔體被 暴露在淸潔溶液的氣體或含有醇類的淸潔蒸氣中。如此可 以防止不均勻膜厚度以免發生，此情形曾經是因爲殘留在 孔洞中的陽極化溶液之不充分移除所導致@ ° (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -44- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）------ ^ ---- Order --------- Line I Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -18- 487984 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Α7 Β7 V. DESCRIPTION OF THE INVENTION (16) The feeding nozzle may be provided independently of the H F solution nozzle.  then, The drain pipe 21 is opened again to drain the cleaning solution containing alcohol, Then, pure water is supplied into the electrolytic cell 61 through the supply nozzle 27. It is preferable to attach an ultrasonic vibrator to the supply nozzle 2 7 or the electrolytic cell 6 1 at will, So that the pure water cleaning solution can have ultrasonic energy.  After purifying with pure water, The drain pipe 21 is opened to discharge pure water.  The vacuum suction via the communication path 22 is stopped, And the positive electrode 6 4 rises, The vacuum suction here via the communication path 23 is stopped to take out the processing target W.  FIG. 6 illustrates a state where the positive electrode 64 is in a lowered position, This makes it easy to understand the structure of the unit. During anodization, It is on the back of the processing target W.  Figure 7 shows a perforated body cleaning system. As another example used in the present invention. The system shown in Fig. 7 has an anodizing unit 40, This unit has substantially the same structure as the unit shown in FIG. 6, An alcohol cleaning unit 41 and a pure water cleaning unit 42.  After the anodization is carried out in the anodizing unit 40, The target object W, which has been polarized, After the anodizing solution in the electrolytic cell is completely discharged, It is moved to the alcohol cleaning unit 41 by a horizontal transfer robot (not shown). In an alcohol-based cleaning tank 3 3, A rotary chuck holder 34 sucks and treats the target object W on its back surface to hold it. In that state, The cleaning solution containing alcohol is supplied through a nozzle 35 provided on the object to be treated W. In this module, The size of this paper containing alcohol is applicable to China National Standard (CNS) A4 (210 X 297 public love) ----------------- ^ ---- Order ---- ----- Line mm (Please read the precautions on the back before filling this page) -19- 487984 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (17) The cleaning solution is ejected toward the object to be treated when it is rotated at a predetermined number of revolutions. therefore, Produced with pure water.  Secondly, Process the subject matter W, Alcohol cleaning has been completed on this subject, It is moved to the pure water cleaning unit 4 2 by a horizontal transfer robot. The treatment target W is arranged so as to be tightly held at its peripheral edge with a base chuck 37 by an external force. then, Pure water is supplied through the upper nozzle 38 and the lower nozzle 39. And in this unit, Pure water is sprayed out of both the upper nozzle 38 and the lower nozzle 38. When the subject W is rotated at a predetermined number of revolutions. Stop shooting pure water, The treatment target W may be further spin-dried to continue its rotation.  FIG. 8 shows a pure water cleaning unit used in the present invention. This unit is a modified version of the pure water cleaning unit 4 shown in Figure 7, And is a unit with an electrolytic cell 3 6 provided with a sealable closure lid 51, So that after washing with pure water, The sealed closed space defined by the electrolytic cell 36 and the cover 51 can be evacuated via a drainage path 52. B performs spin drying to maintain a vacuum inside the sealed closed space. Where the water component remains in the holes, It can adversely affect subsequent processing steps. E.g, When the crystal film is grown on the porous silicon, The trace amount of water can evaporate from the inside of the pores of the porous body and diffuse into a crystal film growth chamber to cause defects on the crystal film growth film. To prevent this, It is quite effective to implement such a vacuum exhaust method at the end.  Fig. 9 shows an alcohol cleaning unit used in the present invention. There is a nozzle 5 4 which is provided with a nozzle 5 4 Vapor of the cleaning solution containing alcohol is supplied through this nozzle. A treatment target W is inserted from the slot 53, And this paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) IJ -------------- l · --- Order -------- -Line · j ~ (please read the note 3 on the back before filling out this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 487984 A7 B7 V. Description of the invention (18) The vapor of the cleaning solution with alcohol is supplied through the nozzle 54. Clean the inside of the tank with steam. after that, The target object W can be slowly taken out of the tank to the outside dry air, Causing the alcohols remaining in the treatment target W to evaporate, Therefore, the target object W can be dried. If pure water is directly injected on a porous body with very high porosity, E.g, 70% or higher porosity, Or ultrasonic water is provided here for physical cleansing, Porous bodies tend to rupture. then, You can use such a unit, Thereby, even a porous body having a high porosity can be cleaned without damaging the porous body. Porous silicon with a porosity of 70% or more is preferably used as a luminescent material. In contrast to the conventional case where the subject matter is washed with pure water only after anodizing, Those subject to cleaning with alcohol vapors and drying after anodization do not cause changes in the porous structure. therefore, The material can stably maintain the luminous intensity for a long time. Among the above, Describe a situation in which an alcohol-containing solution is used as a cleaning solution. However, in the present invention, Acetic acid can also be used instead of alcohol.  A process for manufacturing a non-porous film and a process for manufacturing a bonded substrate according to the present invention will be described below.  Fig. 10 is a flowchart of a process for manufacturing a bonded substrate according to the present invention.  First of all, In step S 1 1, The non-porous body 1 is anodized to form a porous layer at least on its surface.  In step s 1 2 淸 洁 有 孔 层 2 is immersed in a paper size to apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----------------- ^ ---- Order --------- Line · m (Please read the precautions on the back before filling out this page) -21-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 A7 B7 V. Description of the invention (19) In 100% alcohol or alcohol aqueous solution, By adding 100% alcohol or an aqueous alcohol solution dropwise to the porous layer 2, Or by exposing the porous layer to 2 to 100% of the alcohol or alcohol aqueous vapor. In this step S 1 2, Acetic acid may be used instead of alcohol. One example of sanctification is as described above.  Secondly, Optionally in step S 1 3, The perforated layer 2 was cleaned with pure water. And in this step, The porous layer 2 can be immersed in pure water, Pure water can be added to the porous layer 2 one by one or the porous layer 2 can be exposed to water vapor. here, It is best to clean with pure water with ultrasonic energy,  By using an ultrasonic vibrator. then, The perforated layer 2 is dried to complete a series of cleaning steps. Examples of cleaning and drying with pure water are also described above.  Secondly, The porous layer 2 is oxidized at a low temperature to form a thin oxide film on the inner wall surface of the hole.  then, In step S 1 4 The non-porous layer 3 is formed on the porous layer 2. This step S 1 4 can be generated before step S 1 to form the non-porous layer 3 on the non-porous body 1, And then make the entire single crystal silicon from the back to become porous. on the other hand, Anodization may also be performed so that the back side of the non-porous body 1 is made porous so that the non-porous layer 3 stays on the surface side.  Secondly, In step S 1 5 An insulating layer 4 is randomly formed on the surface of the non-porous layer 3, And as shown in step S 1 6, Non-porous layer 3 via an insulating layer 4 between them, It is joined to a separately prepared support base 5.  In step S 1 7, A pretreatment is generated in order to apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) from the paper size thus formed. -22- ------------ 0 ^, ---- l · --- Order --------- Line · (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 Α7 Β7 V. DESCRIPTION OF THE INVENTION (20) The multilayer structure removes the porous layer 2. In the case where the non-porous body 1 remains as shown in FIG. 10, This was removed from the multilayer structure by honing, Kuang Guang, Polished or etched. after that, The uncovered perforated layer 2 is selectively removed as shown in step S 1 8, By containing HF, H2O2 and water etchant perform wet etching.  on the other hand, The non-porous body 1 can be separated (step S 1 7) by applying an external force to the multilayer structure, Or by creating an internal stress in it, This results in cracking in the porous layer 2 or its interface with the upper and lower layers. Some of the porous layer 2 remaining on the non-porous layer 3 can be selectively removed (step S 1 8) by etching in the same manner as described above.  The bonding substrate thus obtained can be further subjected to a heat treatment in a reducing atmosphere containing hydrogen at will, To make its surface smoother.  Since the porous layer can hardly change its porous structure, Since H F or H F aqueous solution still remains in it, The resulting bonded substrate does not cause any microscopically uneven film thickness, Therefore, a high-quality bonding substrate can be obtained.  The porous layer 2 used in the present invention may include, for example, Si as described above,  Ge, GaAs, GaAlAs, SiC, SiGe and C semiconductors. especially, Porous silicon with less than 70% porosity is a good base material for crystal film growth. even better is, The porous layer may have a porosity of not more than 30% in a portion adjacent to or adjacent to the non-porous layer. The porous layer may preferably have a thickness from about 1 μm to about 30 μm.  The anodization used in the present invention is performed in an H F aqueous solution, Or this paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----------------- ^ ---- Order ------- --Line (please read the precautions on the back before filling this page) -23- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 A7 B7_ V. Description of the invention (21) Aqueous solution of H F and alcohols.  As the alcohols used in the cleaning step of the present invention, Can use methanol,  Ethanol and propanol. The cleaning solution may be any solution containing at least 4% by weight alcohol.  After cleaning with a cleaning solution containing alcohol, Porous bodies are best cleaned with pure water. here, As mentioned above, It can be cleaned by pure water with ultrasonic energy ranging from 6 〇 Κ Η to 2 Μ Η ζ. This can increase the efficiency of replacing HF with water.  In the case of the invention, After anodization is complete, Porous bodies can best be moved from anodizing solution to cleaning solution in the shortest possible time. however, Never be limited to 3 minutes, It can be extended to approximately 10 minutes.  The non-porous layer used in the present invention may preferably include, Such as elemental semiconductor layers like Si and Ge, For example GaAs, GaAlAs,  A composite semiconductor of Si C and Si Ge. To be clear, Monocrystalline silicon layer,  Polycrystalline silicon layers and amorphous silicon layers are preferred. In the non-porous layer, It can also form a device or, for example, a MOSFET, ρ — η joint, p-i-n connector and semiconductor connector of M Is connector.  As an optional insulation layer, It is best to use an insulator or, for example, silicon oxide, Dielectric layers of silicon nitride and silicon oxynitride. This layer can be formed as a single crystal layer or multiple layers made of similar or different materials.  The support base used in the present invention may include a semiconductor such as silicon,  Such as aluminum or stainless steel, Such as alumina ceramics, And insulating materials such as quartz glass and plastic film. These support bases can also be in accordance with the Chinese National Standard (CNS) A4 specifications (210 X 297 mm) in this paper size ----------------- ^ ---- Order --------- line ii (Please read the precautions on the back before filling out this page) -24- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 Α7 Β7 V. Description of the invention (22) Form a material on a surface different from the material constituting the support base itself. In the case where a bonded S 0 I substrate is produced, The insulating layer may preferably be formed on the surface of the non-porous layer and then bonded to a silicon wafer or a quartz wafer. and, The support base may be a jig for separation only. In order to selectively remove the perforated layer, Using one touch etchants, This etchant can reach an etching rate to a porous body of at least 100 times. And it is better to have an etching rate of at least 100 000 times to a non-porous body. In the case of porous and non-porous silicon, It is best to use a solution containing H F and an oxidant, For example, by hydrofluoric acid, Mixed solution of nitric acid and acetic acid, Hydrofluoric acid, A mixed solution of hydrogen peroxide and water, Hydrofluoric acid, A mixed solution of alcohol and water, And hydrofluoric acid, A mixed solution of hydrogen peroxide and alcohol.  (Anodizing and cleaning unit) In the present invention, The units shown in Figures 6 to 9 can be used as anodized and cleaned units. In addition, Anodizing and cleaning units shown in Figures 1 to 14 can also be used.  Figure 11 shows a holder and a substrate transfer robot. These are used in an anodizing unit of the present invention. Figure 12 shows the anodized unit. Figures 13 and 14 show the anodizing and cleaning systems used in the present invention.  The unit shown in Figure 12 is a unit, By this means, the three substrates used as processing targets can be anodized at one time. As shown in Figure 11, A substrate holding member (hereinafter referred to as >  Holder 〃) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -----------------: ---- Order --------- Line • (Please read the notes on the back before filling out this page) -25- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 A7 B7 V. Invention description (23) 1 0 2, It is a square flat plate with a circular opening 1 0 3 at its center. Along the opening 1 0 3, A ring-shaped base suction pad (hereinafter referred to as ~ pad〃) is embedded. A groove is created in the gasket on its surface, And the inside of the groove can be induced into a vacuum through an exhaust line 1 0 5 from the back of the gasket. Reference numerals 10 6 a and 1 0 6 b each indicate a substrate transport robot, This robot operates in pairs. First of all, The robot 10 6 a holds a processing target W on its back by vacuum suction, And it is brought close to the holder 102 so as to be parallel to its surface. Secondly, The robot 1 0 6 b is passed through the opening 1 0 3 of the holder 1 0 2 through the part that is turned into an L shape by twisting, And wait for the processing target W to approach. The robot 106b has a vacuum suction function like the robot 106b. When the back side of the processing target W has contacted the front end of the robot 106b, The robot 1 0 6 b holds and processes the target object W by suction, And the robot 106a releases its suction to leave upward. then, The connector person 1 〇 6 b moves to the right as shown in the figure, The back side of the processing target W is brought into contact with the pad 104. here, The inside of the groove is kept vacuum in the gasket 104, and by the suction line 105, And the gasket 104 holds the target object W by suction. The robot 1 0 6 b passes through the opening 103 and leaves upward. Therefore, The treatment target W is held by the holder 102. and, When the treatment target W is detached from here, The above operation is reversed.  As shown in Figure 12, An anodizing unit 2 1 0 of the anodizing unit is assembled with a negative electrode 2 6 a and a positive electrode 2 6 b at both ends thereof.  The three holders 102 are arranged in series in such a manner that they are held between these pairs of electrodes. Figure 12 shows a state, The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ----------------- ^ ---- Order ------- --Line s * (Please read the notes on the back before filling this page) -26- 487984 Printed by A7 B7, Consumer Cooperatives of Intellectual Property Bureau, Ministry of Economic Affairs Description of the invention (24) The treatment target object w has been held by each holder 102. The space between the electrodes 2 0 6 a and 2 0 6 b and the holder 1 0 2 and between the holders 102 Each is filled with an electrolyte solution 2 0 9 And separated separately by the treatment target. Anodization is performed in this state by applying a DC voltage across the electrodes 206a and 206b. After anodizing is completed, Open the waste liquid outlet 2 0 8 And the electrolyte solution 209 is discharged through this outlet. These holders 102 function similarly to the bottom of the electrolytic cell 61 of the unit shown in FIG.  As shown in Figure 13, The anodizing system installed with the anodizing unit has a loader 301, An anodizing tank 302, A junk 303, A rotary dryer 304 and an unloader 305, They are arranged from left to right in this order as shown in the figure. In the direction of this configuration, A substrate (wafer) piece-by-piece conveying robot 3 06 and a carriage conveying robot 3 07 are provided. The substrate conveying robot 3 0 6 is further composed of two parts 3 0 6 a and 3 6 b as shown in FIG. 13. The cleaning tank 3 0 3 is provided with the function of circulating an aqueous solution containing at least one selected from alcohols and acetic acid.  And the function of supplying pure water. This system also has a system 3 0 8 The electrolyte solution in the anodizing tank is cyclically filtered.  The substrate placed in the loader 3 0 1 as the processing target W is set in the holder 1 0 2 by the water transfer robot 3 0 6, It is placed in the anodizing tank 3 02.  The substrate that has been anodized in the anodizing tank 3 0 2 is taken out of the holder 1 0 2 by the robot 3 0 6, And is transported to the cleaning tank 3 0 3. In the cleaning tank 3 0 3, The substrate is to contain at least one selected from the paper size applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) ~ ----------------- ^ ---- Order --------- line ^^ · •-(Please read the notes on the back before filling out this page) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 A7 B7 V. Description of the invention (25) Alcohol and acetic acid aqueous solution are cleaned. then, They were cleaned in the same tank with pure water.  The substrate cleaned by means of the robot 3 07 is transported to the robot dryer 3 9 together with the carriage, And once dried there.  then, The substrate is taken out of the bracket piece by piece, And then spin-dried in a spin dryer 304.  The dried substrate is sent to the unloader 3 05.  therefore, The processing from step S 1 to step S 1 3 is performed in a batch.  Figure 14 shows a modified version of the system shown in Figure 13 The other cleaning tank is added to the cleaning tank only in the system shown in Figure 13. The first cleaning tank 310 is a tank having a function of circulating an aqueous solution containing alcohols and / or acetic acid. And has a transit system. In the second cleaning tank 3 0 3, Only pure water is supplied and the final cleaning with water is carried out.  In the system of the present invention as shown in Figures 13 and 14, Is structured like Figures 6 to 9, The units of those shown in 11 and 12 may be used as an anodizing tank or a cleaning tank. In Figure 14 The other reference numerals are the same as those shown in FIG.  (Embodiment) Referring again to FIG. 1 and other figures, Using silicon as an example, The process for producing a non-porous film and a bonding substrate according to the present invention will be described in detail.  Monocrystalline silicon wafers are prepared as non-porous bodies 1 (Fig. 10). Each paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) ---- Line · • t (Please read the notes on the back before filling out this page) • 28- 487984 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (26) The surface of the wafer is made to have a porous depth from about 1 μm to about 30 μm ′. With the anodizing unit shown in FIG. 6 or 12, Therefore, a porous single crystal silicon layer is formed as the porous layer 2. The porous layer formed here can preferably be made to have a porosity from about 5 to 70%. And more preferably from about 10% to 50%. and, It is best to change the anodizing current density during the anodizing process, H F concentration, etc. This allows the porous layer to be made into a multilayer structure having at least two layers having mutually different porosities.  then, Using the systems shown in Figures 7 to 9 and 1 3 or 14 Its surface has been made into many silicon wafers and cleaned with a cleaning solution. The cleaning solution is composed of an aqueous solution containing alcohols and / or acetic acid at a concentration of at least 4% by weight. after that, The cleaning solution was replaced with pure water to clean the silicon wafer, This is followed by drying.  · Each of the cleaned silicon wafers is subjected to a heat treatment at about 200 ° C to about 600 ° C, In order to oxidize the inner wall of the hole in the porous layer, To form an oxide film on the inner wall surface. The hole walls are still mainly composed of silicon.  On the perforated layer 2, The non-porous layer 3 composed of single crystal silicon is formed by C V D, Sputtering, Molecular beam epitaxy or liquid phase epitaxy.  On the surface of the non-porous layer 3, A silicon oxide film is optionally formed as the insulating film 4.  The surface of the insulating film 4 and the surface of the single crystal silicon wafer or the support base composed of quartz glass are brought into contact to bond them. In the case where the insulating film 4 is not formed, The non-porous layer 3 is bonded to the support base 5. In order to improve its joint strength, The porous structure formed by bonding in this way is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----------------- ^ ---- Order --------- Line ** · (Please read the precautions on the back before filling out this page) -29- 487984 Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (27) can be heat-treated in the air of inert gas or in the air of oxidizing gas Or subject to anodic bonding.  From a multilayer structure, The silicon wafer 1 which has not yet been made with holes is subjected to honing, 硏 light or R I E (reactive ion etching) on the back side to remove, This back side is directly opposite to the bonding surface side.  The uncovered porous layer 2 is further etched with a uranium selective agent as described above. Therefore, a bonded substrate with a non-porous film is obtained on the support base 5. The process of forming holes in them, It is implemented in an aqueous solution such as HF. For this process, The existence of holes in silicon is known to be essential, And the reaction mechanism is considered as follows:  First of all, A silicon substrate that has been electrolyzed in an H F aqueous solution, The hole is a surface that is sensed on the negative electrode side. result, S i — the strength of the Η key increases, The S i-Η bonds exist in the form of unbonded ends compensated at the surface. at this time, The fluoride ion in the H F solution causes a nucleophilic reaction with the Si-Η bond to form the Si-F bond. Because of this reaction, When an electron is asked, it is released to the positive electrode side and hydrogen molecules are generated. Because of the polarization characteristics of the Si-F bond, The Si-Si bonds near the surface become weaker. This weak S i — S i bond reacts with HF or water, And the Si atom on the crystal plane becomes S i F 4 and is released from the crystal plane. result, Cavities (concave) on the crystal plane, The distribution of the electric field that reacts with the holes preferentially occurs at this location, As a result, such surface heterogeneity is enlarged and the etching of silicon atoms is successively performed along the electric field. Incidentally, Used for anodizing This paper is sized for China National Standard (CNS) A4 (210 X 297 mm) ----------------- ^ ---- Order ---- ----- line (please read the precautions on the back before filling this page) -30- printed by the employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 A7 B7 V. Invention description (28) The solution is not limited to H F aqueous solution, It may be another electrolyte solution.  The etching of silicon in the anodizing step is illustrated by the following reaction mechanism: S i + 2HF + (2 — n) e + —S i F2 + 2H + + n e- 2SiF2— Si + SiF4 S i F4 + 2HF- > H2S i Fe The reaction with hydrofluoric acid leads to the formation of the silicon compound H 2 S i F 6, The silicon is etched. The above reaction system solution shows that Η 2 S i F 6 is formed in a larger amount as the concentration of hydrogen fluoride increases. The characteristics of this H2S i F6 are: It hardly reacts with acids (including hydrofluoric acid) or strong alkaline solutions, that is, Rarely dissolved in it.  The progress of the anodizing reaction also results in the formation of tens to hundreds of angstrom holes on the substrate surface. And the holes extend forward along the direction of the electric field. that is, The electrolyte solution (aqueous hydrofluoric acid) enters the holes and causes a reaction at the top of the holes. then, Even when the electric field disappears, The hydrofluoric acid solution is confined in which holes are generated randomly. What is discussed at this stage is: The hydrofluoric acid aqueous solution confined in the pores continues to react even after the electric field has disappeared. Continue to form Η 2 S i F 6. The Η 2 S i F 6 formed thereby adheres to the inner wall of the hole, Where porous silicon is selectively etched, Implemented at the end of the process, It becomes uneven.  In selective etching of a porous layer, The non-porous layer to be left unetched and the porous layer to be removed, Both are similar to single crystal silicon in many cases. therefore, Although the rate of chemical etching should in principle be equal to, But this paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) ----------------- ^ ---- Order ------- --Line (please read the precautions on the back before filling this page) -31-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 Α7 Β7 Description of the invention (29) Etchant uranium that has been immersed into the pores of the porous layer etches the wall surface, This allows the porous layer to be engraved not only from the layer surface but also from the inside. Therefore, The etching of the porous body is in a situation where the entire layer is completely destroyed.  then, In order to etch the porous layer uniformly, Η 2 S i F 6 must be maintained to prevent it from being randomly generated in the holes. To this end, It is important to replace hydrofluoric acid, which is easily left in the pores, with a liquid that is not etched by uranium as much as possible. and, To remove the porous layer evenly, It is best to form an oxide film on the inner wall of the hole in the porous layer. It is also preferable to keep Η 2 S i F 6 from forming here.  Figures 1 5 A to 1 5 D graphically show the state of the interior of the holes in the porous layer. When cleaned with pure water and dried, anodization is completed.  Figure 15 A shows a cross section of a porous layer, Immediately after it was taken out of the air after anodizing, . The holes 6 0 2 are formed due to the anodization of the substrate 6 0 1, And the electrolyte solution 80 remained in the pores. As above, The electrolyte solution is a mixed solution of H F and alcohol in many cases.  Figure 1 5 Β shows the state of the inside of the hole, The perforated layer has been left in the air for several minutes. The water and alcohol components in the electrolyte solution 80 have partially evaporated, Moreover, the H F aqueous solution is still in a state of being accumulated in the depth of the pores.  Figure 1 5 C shows how the porous layer was cleaned with pure water 8 2.  general, The liquid enters the pores by capillary action and is mixed with a viscous H F aqueous solution. Then the hydrofluoric acid diffuses towards the outside of the hole, To become gradually replaced by pure water in the hole. therefore, Produced a cleansing effect.  This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------------- ^ ---- Order -------- -Line (Please read the notes on the back before filling this page) -32- 487984 A7 ____ B7 V. Description of the invention (3) In this stage, 'the depth of penetration of the liquid into the cavity by capillary actionΗ is expressed by the following equation.  (Please read the notes on the back before filling out this page) Η = 2γ · c 〇 sG / apg Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs where γ is the surface tension Θ is the contact angle of the liquid relative to the substrate; a is the hole size of the hole body; P is the density of the silicon body; And g is the acceleration due to gravity. At this stage, The surface of the porous layer is hydrophobic due to hydrofluoric acid. And therefore has a very large contact angle Θ. therefore, The penetration depth of water Η is almost zero. that is, Pure water 8 2 used for cleaning can rarely enter the hole 6 0 2. for this reason, An air layer 604 must be formed near the surface of the hole 60. Once this has happened, Even after cleaning with pure water, When water is tried to be removed by means of a spin dryer, etc., The hydrofluoric acid in the pores 6 0 2 is not replaced by water but becomes higher in concentration. Finally, the solution remaining in the holes 6 02 was completely dried, So as shown in Figure 15 D, The second product dry substance 6 0 6 adheres to the surface of the hole wall. This dry substance 6 0 6 is the above-mentioned H 2 S i F 6. In Figure 1 5 D, It shows that the dried substance 6 0 6 is in a state of sticking to all holes. Actually, It only sticks to the huge holes, Or dry matter 6 0 6 with different thicknesses for each hole can be produced and become non-uniform.  on the other hand, Figures 16 to 16 C graphically show the state of the interior of the holes in the porous layer. When the anodization is complete, Clean afterwards with an aqueous solution containing alcohol and / or acetic acid.  Figure 16 A shows a cross section of a porous layer, Immediately after being anodized, it was taken out of the air. Reference numeral 701 designates a substrate;  -33- This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 A7 B7_ V. Invention description (31) 7 0 2 indicates holes; And 80 indicates an electrolyte solution.  Figure 16B shows how the porous layer can be cleaned with an aqueous solution containing alcohols and / or acetic acid. Alcohols and / or acetic acid that act like surfactants, Therefore, the contact angle Θ is so small that the solution can easily enter the hole. Therefore, Aqueous solutions containing alcohols and / or acetic acid, And the electrolyte solutions 80 are quickly mixed with each other. then, The cleaning effect with water can be fully implemented,  As a result, the concentration of the electrolyte solution 80 is sufficiently reduced and almost all of the electrolyte solutions in the pores are replaced with water. And then dried with a rotary dryer, etc. Therefore, as shown in Figure 1 6 C, A porous silicon layer can be obtained in which any secondary product attributed to HF is present in the holes.  (Embodiment 2) A case where silicon is used as an example, The process for producing a non-porous film and a bonding substrate according to the present invention is explained in detail.  Monocrystalline silicon wafers are prepared as non-porous bodies1, Each wafer surface is made with an anodizing unit as shown in Fig. 6 or 12 with holes at a depth of about 1 μm to about 30 μm. Therefore, a porous single crystal silicon layer is formed as the porous layer 2. The porous layer formed here is preferably made to have a porosity from about 5% to 70%. and, During the anodizing process, Anodizing current density, Hydrofluoric acid solution and so on are changed, So that the porous layer can be made to have a multilayer structure with at least two layers, This structure has a higher porosity inside the substrate than on the surface.  then, Using the systems of Figures 7 to 9 and 1 3 or 1 4 The surface has been made porous silicon wafers are cleaned with a cleaning solution, The paper size of this cleaning solution is applicable to China National Standard (CNS) A4 (210 X 297 mm) ----------------- ^ ---- Order ---- ----- Line •-(Please read the precautions on the back before filling out this page) -34- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 A7 B7 V. Description of the invention (32) is composed of an aqueous solution containing alcohols and / acetic acid in a concentration of at least 4% by weight. after that, The cleaning solution was replaced by pure water with the cleaning silicon wafer.  This is followed by drying.  Such clean silicon wafers are each optionally subjected to a heat treatment at about 200 ° C to about 600 ° C. In order to oxidize the inner wall of the hole in the porous layer, In order to form an oxide film on the inner wall surface.  On the perforated layer 2, The non-porous layer 3 composed of single crystal silicon is controlled by C V D, Sputtering, Formed by molecular beam epitaxy or liquid phase epitaxy.  On the surface of the non-porous layer 3, A silicon oxide film is optionally formed as the insulating layer 4.  The surface of the insulating layer 4 and the surface of the single crystal silicon wafer or the support base 5 composed of quartz glass are brought into contact to join them. In order to improve its joint strength, The resulting multilayer structure can be heat treated in the air of an inert gas or in the air of an oxidizing gas. Or subject to anodic bonding.  then, Discriminating members such as wedges or blades are inserted to distinguish the multi-layer structure into two parts. therefore, Perforated layer, Has low mechanical strength, Broken in its interior or interface, And the multilayer structure is divided into two parts. A fluid such as a liquid and a gas may be projected to the sides of the multilayer structure to physically distinguish the multilayer structure. on the other hand, The multilayer structure can be illuminated by light to generate heat in it, Or it can be heated from the outside, So that internal stress can be reduced in multilayer structures, And the forces generated can be used to distinguish multilayer structures.  Because of this distinction, The non-porous layer is then transferred to a support base.  Since the residual layer of the porous layer 2 exists on the non-porous layer, Therefore, this layer is in accordance with the above Chinese paper standard (CNS) A4 specification (210 X 297 mm) ----------------- ^ ---- Order --- ------ Line • ·· (Please read the precautions on the back before filling this page) -35- 487984 A7 B7 V. Description of the Invention (33) (Please read the precautions on the back before filling this page) The selective etchant is described by the etchant. According to this embodiment, Any unwanted second product does not remain in the pores of the porous layer, And therefore the non-porous layer can be free of any uneven film thickness after etching.  then, The non-porous layer on the support base can be optionally subjected to heat treatment in a reducing gas containing hydrogen, In order to smooth the surface and also diffuse outward and remove the boron contained in the non-porous layer, etc.  therefore, It is possible to obtain a bonding substrate with a non-porous layer, This substrate is preferably used as a SOI substrate.  (Embodiment 3) A case where silicon is used as an example, The process for producing a non-porous film and a bonding substrate according to the present invention is explained in detail.  Monocrystalline silicon wafers are prepared as non-porous targets. Each of these wafers is anodized to use the anodizing unit shown in Figure 6 or 12, A porous layer 2 is formed as shown in step S 11 in FIG. 10.  Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs as a condition for anodization, First of all, Use a mixed solution of hydrofluoric acid and ethanol, A low porosity, The first porous layer having a porosity from 5% to 30% and a thickness from 1 μm to 29 μm can be formed at a low current density. then, After changing to a high current density, A high porosity, A second porous layer having a porosity from 30% to 70% and a thickness from 1 nm to 3 μm may be formed under the first porous layer.  Secondly, As shown in step S 12 in FIG. 10, Use the systems of Figures 7 to 9 and 1 3 or 14 to perform cleaning. therefore, The inside of the pores of the porous silicon layer 2 with a double-layered structure with different porosity is contained alcohol and -36- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 487984 Ministry of Economic Affairs wisdom Printed by the Consumer Bureau of Property Bureau A7 _____B7 V. Description of the invention: (34) Cleaned by acetic acid cleaning solution. In the case where a low-porosity layer is formed on the surface side, The cleaning method of the present invention is particularly effective.  after that, As shown in step S 1 3 in FIG. 10, The porous silicon layer 2 is cleaned with pure water, This is followed by drying.  The porous silicon layer 2 is subjected to a heat treatment in an oxidizing gas at about 200 ° C to about 600 ° C. To form an oxide film on the inner wall of the hole.  The oxide film ′ formed on the porous silicon layer 2 whose inner wall has been oxidized is removed with diluted hydrofluoric acid. At this stage, A large part of the oxide film on the inner wall of the hole is still in a residual state.  The wafer on the surface where each porous silicon layer 2 has been formed is set in a crystal film growth apparatus, And the porous silicon layer 2 is pre-baked in a hydrogen gas and the temperature rises to 900 ° C to 100 ° C.  For example, Si gas of Si Η 4 is introduced to plug the surface holes of the porous layer 2. Once the introduction of sand gas is stopped ’and the heat treatment is generated in the chlorine gas, the temperature rises to 100 ° C to 120 ° C. Then, for example, silicon gas of si H2C 1 2 is introduced to implement the crystal film growth at a temperature lowered from 90 ° C. to 100 ° C. A non-porous layer 3 is formed on the porous silicon layer 2 whose inner wall has been oxidized.  An insulating layer is formed on the non-porous layer 3.  The formed insulating layer is bonded to the supporting base 5 to form a multilayer structure, This is followed by a heat treatment at 100 ° C to 12 0 ° C.  A wedge made of resin or metal is inserted into the side of the multilayer structure to cause the porous layer of the multilayer structure to be cracked on its side.  The liquid composed of liquid or gas is injected into the side of the multilayer structure. The size of this paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) --------------- -^ ---- Order --------- Line-V (Please read the precautions on the back before filling out this page) -37- Printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economic Affairs 487984 Α7 Β7 Five , Description of the invention (35) causes the porous layer to be broken further inward.  therefore, The multilayer structure is distinguished at the interface between the second porous layer with high porosity and the first porous layer with low porosity.  First porous layer with low porosity, This layer has an oxide film on the inner wall of its holes and remains on the non-porous layer 3 transported to the support base 5 side, It was removed by etching. Since the H F in the holes has been completely removed by anodizing after anodization, So the remaining porous layer can be removed evenly.  The surface of the non-porous layer 3 is smoothed by hydrogen annealing or the like. The non-porous layer 3 thus obtained can have a smooth surface without any uneven film thickness.  Example (Example 1) A silicon wafer as a processing target is set in a cell shown in FIG. 6, And as an electrolyte solution, By taking a volume ratio of 1:  1 :  1 mixed HF weight percentage concentration of 4 9% hydrofluoric acid, An anodized solution prepared from water and ethanol, It is supplied to the electrolytic cell. A DC voltage providing a fixed current of 7 m A / cm 2 was applied to the wafer for 10 minutes. result, A porous silicon layer having a porosity of 20% was uniformly formed on one surface of the wafer with a thickness of 12 μm.  then, The electrolyte solution is drained through the drain pipe, And by taking a volume ratio of 1:  1Mixed with isopropyl alcohol and water, It is adopted from the above paper size to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----------------- ^ ---- Order --- ------ line (Please read the notes on the back before filling this page) -38-Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 487984 A7 B7 V. Description of the invention (36) The part is injected into the electrolytic cell. This cleaning solution is maintained for 1 minute in a state where the electrolytic tank is full, To implement cleanliness, After that, the cleaning solution is discharged out of the electrolytic cell.  Secondly, Pure water is injected from the upper part. Pure water was allowed to overflow to clean (flush) the wafer for 20 minutes. Then the wafer is taken out, And dried by a rotary dryer. after that, The wafer was left in the gas for a week but no change was seen in the wafer's porous silicon.  (Comparative Example 1) In Example 1, Omitting the cleaning step using a cleaning solution containing alcohol as described above, And after anodizing, The wafer cleaned with pure water was immediately spin-dried. The obtained wafer was left in the air for 10 hours. result, The structure of the porous silicon surface of the wafer is changed to become cloudy.  (Example 2) Using the unit shown in Figure 7, Anodization was performed under the same conditions as in Example 1. Secondly, After the anodized electrolyte solution is completely discharged, The anodized wafer is moved to the cleaning unit 41 by a horizontal transfer robot. The wafer is rotated at 50 0 r · p · m, Alcohol (100%) is supplied from the nozzle to the wafer to clean the wafer surface for 20 seconds.  then, The wafer is moved to the pure water cleaning unit 4 2 by a horizontal transfer robot. Where the wafer is rotated by 4 0 r · p · m, Pure water was sprayed from the upper and lower nozzles to clean the wafer for 15 minutes. After Xie Jie ’s injection of pure water is stopped, And the wafer is rotated by 8 0 r · p · m. In this paper scale, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied. -39- ------------- ----: ---- Order --------- line m I (Please read the phonetic on the back first? Please fill in this page for further information.) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 A7 __ _ B7 V. Description of the Invention (37) Drying is performed in the same unit.  The perforated silicon surface of the wafer cleaned in this way will not change, Even after it was left in the same way as in Example 1 for a week, And maintain a very stable state.  (Example 3) In this example, The unit used in Figure 7, Anodized, Clean with alcohol, Purification and drying with pure water are performed in the same manner as in Example 2. Except when purifying with pure water, An ultrasonic vibrator is set at the top of the upper nozzle,  Pure water with ultrasonic vibration is supplied to the wafer to further improve the cleaning effect.  When in Example 2, Must be cleaned with pure water for 15 minutes, Obtain the same cleaning effect as in Example 2. By cleaning for 10 minutes, Because use pure water with ultrasonic effect.  (Example 4) Example 4 is an example of cleaning with pure water and drying using the unit shown in FIG. 8 〇 Anodizing and cleaning with alcohols were performed under the same conditions as in Example 2.  after that, The unit substrate shown in FIG. 8 was used to purify with pure water. then, In a state where the substrate is kept sealed closed in the same electrolytic cell, It is spin-dried and at the same time dried by vacuum degassing. result, Wafer components rarely remain in the holes, And more stable porous silicon can be obtained.  This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -----------------: ---- Order --------- Line • 鬌 (Please read the notes on the back before filling this page) -40- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 A7 B7 V. Description of the invention (38) (Example 5) An aqueous solution of hydrofluoric acid at a volume percentage of 10% is used as the electrolyte aqueous solution. A voltage was applied for 7 minutes to provide a fixed current with a current density of 10 m A / c m 2 during anodization, An n-type silicon wafer with a resistance of 0 · 〇 7 Ω cm is made porous. As a result, a porous silicon layer having a porosity of about 70% was uniformly formed on one surface of the wafer to a thickness of 12 μm. This wafer is immediately placed in the cleaning unit shown in Figure 9, Alcohol cleaning with propanol vapor, When the cleaned wafer is dried and pulled out upwards.  Because using this cleansing and drying method, Even highly porous porous silicon can be cleaned without causing any changes in its structure.  As above, When cleaning holes, After anodizing, Porous bodies are exposed to cleaning solution gases or cleaning vapors containing alcohols. This can prevent the perforated body itself from deteriorating, This corruption has been caused by the insufficient removal of the anodizing solution remaining in the holes, Prevents erosion of surrounding devices due to the composition of the evaporated anodizing solution, It also prevents contamination caused by these.  (Example 6) As a treatment target, Prepare a 6-inch P type (0 · 0 1 -0. 02Qcm) silicon wafer (with a thickness of 625 μm). The unit shown in FIG. 6 was used as an electrolyte solution, and an HF aqueous solution prepared by mixing HF with an alcohol concentration of 49% by weight in a hydrogen ratio of 2: 1 by volume ratio of 2: 1 was supplied to the anodizing tank. . The anodizing current is set to the size of this paper which is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) --------------------- Order ---- ----- Line • · (Please read the precautions on the back before filling out this page) -41-Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 487984 A7 B7 V. Description of the invention (39) Set at 1mA / cm2, And the anodization continued for 11 minutes to form a porous silicon layer on the surface of the sand wafer. The anodized silicon wafer was immersed in an aqueous solution containing 10% isopropyl alcohol by weight and left for 3 minutes. After that, the silicon wafer was immersed in pure water for 10 minutes to clean it, followed by drying. This silicon wafer was heat-treated at 400 ° C in an oxygen gas for 1 hour in an oxidation furnace to oxidize the surface of the hole wall of the porous layer. Secondly, the oxide film formed on the surface of the porous layer was removed with an H F aqueous solution. Then, the wafer is put into a CVD system to perform baking in a hydrogen gas, and then a crystal film is grown to form a 0 on the porous layer whose surface has been oxidized.  3 μm thick epitaxial layer. The epitaxial layer is composed of non-porous single crystal silicon. The surface of the epitaxial layer is oxidized at 1000 t and burned with hydrogen to form a silicon oxide film with a thickness of 0.2 μm. Then, the film was bonded to a separately prepared 6-inch silicon wafer, followed by a heat treatment in a nitrogen and oxygen gas at 110 ° C for 2 hours to obtain a multilayer structure. Its surface is made into the back of a porous silicon wafer, and is honed to a depth of about 6 1 5 μm by a honing machine called a back honing machine, so that the porous silicon layer is exposed. The multilayer structure with an uncovered porous silicon layer is immersed in a solution prepared by mixing hydrofluoric acid and hydrogen peroxide water at a volume ratio of 1: 100 to remove the porous silicon by selective engraving. Floor. As a result of observing the obtained bonded substrate, any spot-like uneven film thickness as shown in Fig. 17 was not observed. After that, the bonding substrate is subjected to hydrogen annealing to obtain an SO I substrate. The substrate has an active layer with a thickness of 0.2 μm and a buried oxide film with a thickness of 0.2 μm. (CNS) A4 specification (210 X 297 mm) ----------------- ^ ---- Order --------- line * ― (please first Read the notes on the back and fill in this page) -42-487984 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (4〇) oxide film This substrate is composed of non-porous monocrystalline silicon and Has a smooth surface. (Example 7) The same wafer as in Example 6 was prepared and subjected to anodization under the same conditions as in Example 6. After anodizing, the wafer was immersed in a bath filled with a cleaning solution consisting of pure water and 15% by weight isopropyl alcohol. After that, the cleaning solution was discharged out of the tank, and then the same tank was filled with pure water, and the wafer was washed with pure water for 10 minutes. Thereafter, the same process as in Example 6 is performed to selectively etch the porous silicon layer. The above process results in a SO I substrate having an active layer having a thickness of 0.2 μm and a buried oxide film having a thickness of 0.2 μm. (I: Comparative Example 2) The same wafer as in Example 6 was prepared and subjected to anodization under the same conditions as in Example 6. The anodized wafer is immersed in pure water and left for 10 minutes to produce cleanliness, followed by drying. Secondly, the same treatment as in Example 6 was performed to selectively etch the porous silicon layer. As a result of observing the obtained bonding substrate, a dot-like film thickness 11 as shown in FIG. The diameter is 2 mm to 7 mm and the thickness of the film is smaller than the thickness of the surrounding surface by about 2 mm to 7 mm. The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -43- ------ ------------- Order --------- Line · *** (Please read the notes on the back before filling this page) 487984 A7 _B7 V. Description of the invention (41 ). The uneven film thickness thus generated does not easily disappear even when the wafer is subjected to hydrogen annealing afterwards. As described above, when cleaning a porous body, after anodizing, the porous body is exposed to a gas of a cleaning solution or a cleaning vapor containing an alcohol. This can prevent uneven film thickness from happening. This situation was caused by insufficient removal of the anodizing solution remaining in the holes @ ° (Please read the precautions on the back before filling this page). Bureau of Intellectual Property, Ministry of Economic Affairs Printed by Employee Consumption Cooperatives-44- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

487984 A8 B8 C8 D8487984 A8 B8 C8 D8 六、申請專利範圍 第89 1 05066號專利申請 中文申請專利範圍修正本 (請先閱讀背面之注意事項再填寫本頁) 民國90年8月修正 1 . 一種淸潔由陽極化所形成的有孔體之方法，包含 步驟在於：在陽極化之後，以含有醇類及醋酸之至少一種 的淸潔溶液淸潔陽極化液體餘留其中之有孔體。 2 .根據申請專利範圍第1項的淸潔由陽極化所形成 的有孔體之方法，其中在淸潔步驟之後，有孔體更進一步 被以純水淸潔。 3 .根據申請專利範圍第1項的淸潔由陽極化所形成 的有孔體之方法，其中淸潔溶液是一會有醇類的水溶液。 4 .根據申請專利範圍第1項的淸潔由陽極化所形成 的有孔體之方法，其中淸潔溶液包含醇類。 5 .根據申請專利範圍第1項的淸潔由陽極化所形成 的有孔體之方法，其中淸潔步驟包含以含有醇類的淸潔溶 液淸潔的步驟，及以含有醇類水溶液的淸潔溶液淸潔之步 驟。 經濟部智慧財產局員工消費合作社印製 6 .根據申請專利範圍第1項的淸潔由陽極化所形成 的有孔體之方法，其中淸潔步驟包含將有孔體暴露在淸潔 溶液的蒸氣中之步驟。 7 ·根據申請專利範圍第1項的淸潔由陽極化所形成 的有孔體之方法，其中淸潔步驟包含將有孔體浸入淸潔溶 液中之步驟。 本^氏張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) ~ 487984 A8 B8 C8 ___ D8 六、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) 8 ·根據申請專利範圍第1項的淸潔由陽極化所形成 的有孔體之方法’其中在淸潔步驟之後，有孔體被以具有 超音波能量的純水淸潔。 9 ·根據申請專利範圍第8項的淸潔由陽極化所形成 的有孔體之方法’其中有孔體具有一個小於7 〇 %的多孔 性之區域。 1 0 ·根據申請專利範圍第1項的淸潔由陽極化所形 成的有孔體之方法，其中在淸潔步驟之後，有孔體被以純 水淸潔’且之後，所淸潔的有孔體被旋轉乾燥且被以除氣 法進一步乾燥。 1 1 ·根據申請專利範圍第1項的淸潔由陽極化所形 成的有孔體之方法，其中淸潔步驟包、含：將有孔體暴露在 淸潔溶液的蒸氣中，及將所淸潔的有孔體相對地從蒸氣的 內側移動到蒸氣的外側，以產生乾燥。 1 2 .根據申請專利範圍第1 1項的淸潔由陽極化所 形成的有孔體之方法，其中有孔體具有一個7 0 %或更高 的多孔性之區域。 經濟部智慧財產局員工消費合作社印製 1 3 ·根據申請專利範圍第1項的淸潔由陽極化所形 成的有孔體之方法，其中有孔體被形成在無孔體基座構件 的表面上。 1 4 ·根據申請專利範圍第1項的淸潔由陽極化所形 成的有孔體之方法，其中其中有孔體包含一半導體。 1 5 . —種製造無孔膜之處理，包含步驟在於：在有 孔體上形成一無孔層，此有孔體已經被藉由根據申請專利 $氏張尺度適用中國國家標準（CNS ) A4規格Υ21〇Χ297公釐） ~ " 487984 A8 B8 C8 D8 六、申請專利範圍 範圍第1項的淸潔有孔體之方法所淸潔。 1 6 .根據申請專利範圍第1 5項的製造無孔膜之處 (請先閱讀背面之注意事項再填寫本頁) 理，其中更進一步包含移除有孔體的步驟。 1 7 . —種製造無孔膜之處理，包含步驟在於：藉由 陽極化形成一有孔層，在有孔層上形成一無孔層，將無孔 層接合到支撐基座，及移除有孔層，其中： 處理更進一步包含步驟在於：在陽極化完成之後，以 含有醇類及醋酸的至少一種之淸潔溶液淸潔有孔層。 1 8 .根據申請專利範圍第1 7項的製造無孔膜之處 理，其中在淸潔步驟之後有孔層被進一步以純水淸潔。 1 9 .根據申請專利範圍第1 7項的製造無孔膜之處 理，其中淸潔溶液是一含有醇類的水溶液。 2 0 .根據申請專利範圍第1 7項的製造無孔膜之處 理，其中淸潔溶液包含醇類。 2 1 .根據申請專利範圍第1 7項的製造無孔膜之處 理，其中淸潔步驟包含以含有醇類的淸潔溶液淸潔的步驟 ，及以含有醇類水溶液的淸潔溶液淸潔之步驟。 經濟部智慧財產局員工消費合作社印製 2 2 .根據申請專利範圍第1 7項的製造無孔膜之處 理，其中淸潔步驟包含將有孔層暴露在淸潔溶液的蒸氣中 之步驟。 2 3 ·根據申請專利範圍第1 7項的製造無孔膜之處 理，其中淸潔步驟包含將有孔層浸入淸潔溶液中之步驟。 2 4 .根據申請專利範圍第1 7項的製造無孔膜之處 理，其中在淸潔步驟之後，有孔層被以具有超音波能量的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ~ ^ 487984 A8 B8 C8 D8 六、申請專利範圍 純水淸潔。 (請先閲讀背面之注意事項再填寫本頁) 2 5 ·根據申請專利範圍第2 4項的製造無孔膜之處 理，其中有孔體具有一個小於7 Q %的多孔性之區域。 2 6 ·根據申請專利範圍第1 7項的製造無孔膜之處 理，其中在淸潔步驟之後，有孔層被以純水淸潔，且之後 ，所淸潔的有孔層被旋轉乾燥。 2 7 ·根據申請專利範圍第1 7項的製造無孔膜之處 理，其中更進一步包含步驟在於：氧化有孔層以在有孔層 的孔洞壁表面形成氧化膜。 2 8 .根據申請專利範圍第1 7項的製造無孔膜之處 理，其中有孔層包含一半導體。 2 9 · —種製造有孔體之處理，包含步驟在於： 使無孔體受到陽極化以形成有孔體；及 在陽極化之後，以含有醇類及醋酸之至少一種的淸潔 溶液淸潔有孔體。 3〇·根據申請專利範圍第2 9項的製造有孔體之處 理，其中在淸潔步驟之後，有孔體更進一步被以純水淸潔 〇 經濟部智慧財產局員工消費合作社印製 3 1 .根據申請專利範圍第2 9項的製造有孔體之處 理，其中淸潔溶液是一含有醇類的水溶液。 3 2 .根據申請專利範圍第2 9項的製造有孔體之處 理，其中淸潔溶液包含醇類。 . 3 3 ·根據申請專利範圍第2 9項的製造有孔體之處 理，其中淸潔步驟包含以含有醇類的淸潔溶液淸潔的步驟 本纸張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -4 - 487984 A8 B8 C8 D8 _ 六、申請專利範圍 ’及以含有醇類水溶液的淸潔溶液淸潔之步驟。 (請先閲讀背面之注意事項再填寫本頁) 3 4 ·根據申請專利範圍第2 9項的製造有孔體之處 理，其中淸潔步驟包含將有孔體暴露在淸潔溶液的蒸氣中 之步騾。 3 5 .根據申請專利範圍第2 9項的製造有孔體之處 理’其中淸潔步驟包含將有孔體浸入淸潔溶液中之步驟。 3 6 .根據申請專利範圍第2 9項的製造有孔體之處 理’其中在淸潔步驟之後，有孔體被以具有超音波能量的 純水淸潔。 3 7 .根據申請專利範圍第3 6項的製造有孔體之處 理’其中有孔體具有一個小於7 0 %的多孔性之區域。 3 8 .根據申請專利範圍第2 9、項的製造有孔體之處 ii ’其中在淸潔步驟之後，有孔體被以純水淸潔，且之後 ’所淸潔的有孔體被旋轉乾燥且被以除氣法進一步乾燥。 經濟部智慧財產局員工消費合作社印製 3 9 ·根據申請專利範圍第2 9項的製造有孔體之處 理’其中淸潔步驟包含：將有孔體暴露在淸潔溶液的蒸氣 中’及將因此淸潔的有孔體相對地從蒸氣的內側移動到蒸 氣的外側，以產生乾燥。 4 0 ·根據申請專利範圍第3 9項的製造有孔體之處 理’其中有孔體具有一個7 〇 %或更高的多孔性之區域。 4 1 .根據申請專利範圍第2 9項的製造有孔體之處 理’其中有孔體被形成在一無孔體基座構件的表面上。 4 2 ·根據申請專利範圍第2 9項的製造有孔體之處 理’其中有孔體包含一半導體。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 487984 ABCD 六、申請專利範圍 (請先閲讀背面之注意事項再填寫本頁) 4 3 · —種製造接合基底之處理，包含步驟在於：藉 由陽極化形成有孔層，將支撐基座接合到形成於有孔層上 的無孔層，及移除有孔層，其中： 處理更進一步包含步驟在於：在陽極化完成之後，以 含有醇類及醋酸的至少一種之淸潔溶液淸潔有孔層。 4 4 ·根據申請專利範圍第4 3項的製造接合基底之 ‘處理，其中在淸潔步驟之後，有孔層更進一步被以純水淸 潔。 4 5 ·根據申請專利範圍第4 3項的製造接合基底之 處理，其中淸潔溶液是一含有醇類的水溶液。 4 6 .根據申請專利範圍第4 3項的製造接合基底之 處理，其中淸潔溶液包含醇類。 、 4 7 ·根據申請專利範圍第4 3項的製造接合基底之 處理，其中淸潔步驟包含以含有醇類的淸潔溶液淸潔的步 驟，及以含有醇類水溶液的淸潔溶液淸潔之步驟。 4 8 .根據申請專利範圍第4 3項的製造接合基底之 處理，其中淸潔步驟包含將有孔層暴露在淸潔溶液的蒸氣 中之步驟。 經濟部智慧財產局員工消費合作社印製 4 9 ·根據申請專利範圍第4 3項的製造接合基底之 處理，其中淸潔步驟包含將有孔層浸入淸潔溶液中之步驟 〇 5 ◦，根據申請專利範圍第4 3項的製造接合基底之 處理，其中在淸潔步驟之後，有孔層被以具有超音波能量 的純水淸潔。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐] ~ 487984 A8 B8 C8 D8 六、申請專利範圍 5 1 .根據申請專利範圍第5 0項的製造接合基底之 處理，其中有孔體具有一個小於7 0 %的多孔性之區域。 (請先閲讀背面之注意事項再填寫本頁) 5 2 ·根據申請專利範圍第5 0項的製造接合基底之 處理，其中在淸潔步驟之後，有孔層被以純水淸潔，且之 後，所淸潔的有孔層被旋轉乾燥。 5 3 .根據申請專利範圍第4 3項的製造接合基底之 處理，其中更進一步包含步驟在於：氧化有孔層以在有孔 層的孔洞壁表面上形成氧化膜。 5 4 ·根據申請專利範圍第4 3項的製造接合基底之 處理，其中有孔層包含一半導體。 5 5 · —種製造具有一有孔層及一無孔層形成在該有 孔層上之基底之方法，包含以下步驟Λ 陽極化無孔基底，以形成有孔層於無孔基底的表面上 在形成無孔層於有孔層上之前，以含有醇類及醋酸之 至少一種的淸潔溶液淸潔有孔層；及 在完成該淸潔步驟之後，在該有孔層上外延成長無孔 層。 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210 X 297公釐）Sixth, the scope of patent application No. 89 1 05066 Patent Application Chinese Patent Application Amendment (please read the precautions on the back before filling this page) The Republic of China in August 1990 Amendment 1. A kind of hole formed by anodizing The method includes the steps of: after anodizing, cleaning the porous body remaining in the anodized liquid with a cleaning solution containing at least one of alcohols and acetic acid. 2. A method for cleaning a porous body formed by anodization according to item 1 of the scope of the patent application, wherein the porous body is further cleaned with pure water after the cleaning step. 3. The method for purifying a porous body formed by anodizing according to item 1 of the scope of patent application, wherein the purifying solution is an aqueous solution containing alcohol. 4. The method for purifying a porous body formed by anodizing according to item 1 of the scope of the patent application, wherein the purifying solution contains an alcohol. 5. The method for cleaning a porous body formed by anodization according to item 1 of the scope of the patent application, wherein the cleaning step includes the step of cleaning with an alcohol-containing cleaning solution, and the method of cleaning with an alcohol-containing aqueous solution. Steps of cleaning solution. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The method of cleaning a porous body formed by anodizing according to item 1 of the scope of patent application, wherein the cleaning step includes exposing the porous body to the vapor of the cleaning solution Steps. 7. The method for cleaning a porous body formed by anodizing according to item 1 of the scope of the patent application, wherein the cleaning step includes the step of immersing the porous body in a cleaning solution. This standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ 487984 A8 B8 C8 ___ D8 6. Scope of patent application (please read the precautions on the back before filling this page) 8 · According to the scope of patent application The method of purging a porous body formed by anodization according to the item 1, wherein after the purifying step, the porous body is cleaned with pure water having ultrasonic energy. 9 · A method for cleaning a porous body formed by anodization according to item 8 of the scope of the patent application, wherein the porous body has a region with a porosity of less than 70%. 1 0 · A method for cleaning a porous body formed by anodization according to item 1 of the scope of the patent application, wherein after the cleaning step, the porous body is cleaned with pure water 'and after that, the cleaned body has The pore body is spin-dried and further dried by a degassing method. 1 1 · The method for cleaning a porous body formed by anodization according to item 1 of the scope of the patent application, wherein the cleaning step includes: exposing the porous body to the steam of the cleaning solution, and The clean porous body relatively moves from the inside of the steam to the outside of the steam to produce drying. 12. A method for cleaning a porous body formed by anodizing according to item 11 of the scope of the patent application, wherein the porous body has a region of 70% or more porosity. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 3 · According to the method of applying patent No. 1 for cleaning the perforated body formed by anodization, the perforated body is formed on the surface of the non-porous body base member. 1 4 · A method for cleaning a porous body formed by anodizing according to item 1 of the scope of patent application, wherein the porous body contains a semiconductor. 1 5. A process for manufacturing a non-porous membrane, comprising the steps of forming a non-porous layer on a porous body, which has been applied to the Chinese National Standard (CNS) A4 according to the patented $ 's Zhang scale Specification (21 ×× 297 mm) ~ " 487984 A8 B8 C8 D8 6. The method of cleaning the perforated body in item 1 of the scope of patent application is cleaned. 16. The manufacturing of non-porous membranes according to item 15 of the scope of patent application (please read the precautions on the back before filling this page), which further includes the step of removing the porous body. 1 7. A process for manufacturing a non-porous film, comprising the steps of forming a porous layer by anodizing, forming a non-porous layer on the porous layer, bonding the non-porous layer to the support base, and removing The porous layer, wherein: the treatment further includes the step of: cleaning the porous layer with a cleaning solution containing at least one of alcohols and acetic acid after the anodization is completed. 18. The process for producing a non-porous membrane according to item 17 of the scope of patent application, wherein the porous layer is further cleaned with pure water after the cleaning step. 19. The process for manufacturing a non-porous membrane according to item 17 of the scope of patent application, wherein the cleaning solution is an aqueous solution containing an alcohol. 20. The process for manufacturing a non-porous membrane according to item 17 of the scope of patent application, wherein the cleaning solution contains alcohols. 21. The process for producing a non-porous membrane according to item 17 of the scope of the patent application, wherein the cleaning step includes the step of cleaning with a cleaning solution containing an alcohol, and the cleaning with a cleaning solution containing an aqueous solution of alcohol. step. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 2. The process of manufacturing non-porous membranes according to item 17 of the scope of patent application, wherein the cleaning step includes the step of exposing the porous layer to the vapor of the cleaning solution. 2 3 · The process of manufacturing a non-porous membrane according to item 17 of the scope of patent application, wherein the cleaning step includes the step of immersing the porous layer in the cleaning solution. 24. According to the process of manufacturing a non-porous membrane according to item 17 of the scope of the patent application, after the cleaning step, the porous layer is applied to the Chinese paper standard (CNS) A4 specification (210X297) at the paper size with ultrasonic energy. Mm) ~ 487 984 A8 B8 C8 D8 VI. Patent application scope Pure water is clean. (Please read the precautions on the back before filling this page) 2 5 · According to the process of manufacturing non-porous membranes according to item 24 of the patent application scope, the porous body has a region with porosity less than 7 Q%. 2 6. The process for manufacturing a non-porous membrane according to item 17 of the scope of the patent application, wherein after the cleaning step, the porous layer is cleaned with pure water, and after that, the cleaned porous layer is spin-dried. 27. The process for manufacturing a non-porous film according to item 17 of the scope of patent application, which further includes the step of oxidizing the porous layer to form an oxide film on the surface of the pore wall of the porous layer. 28. The process for manufacturing a non-porous film according to item 17 of the scope of patent application, wherein the porous layer comprises a semiconductor. 2 9 · A process for producing a porous body, comprising the steps of: anodizing the non-porous body to form a porous body; and after anodizing, cleaning with a cleaning solution containing at least one of alcohols and acetic acid There are holes. 30. According to the 29th item of the scope of the patent application, the porous body is processed. After the cleansing step, the porous body is further cleaned with pure water. The Intellectual Property Bureau of the Ministry of Economic Affairs employee consumer cooperatives 3 1 . According to the scope of patent application No. 29 for the treatment of making porous bodies, the cleaning solution is an aqueous solution containing alcohols. 32. The porous body manufacturing process according to item 29 of the patent application scope, wherein the cleaning solution contains alcohols. 3 3 · According to the scope of the patent application, the processing of producing porous body, the cleaning step includes cleaning step with alcohol-containing cleaning solution. The paper size applies Chinese National Standard (CNS) A4. (210X 297mm) -4-487984 A8 B8 C8 D8 _ 6. Application scope of patents and the steps of cleaning with a cleaning solution containing an alcoholic aqueous solution. (Please read the precautions on the back before filling in this page) 3 4 · According to the scope of the application for the patent application No. 29 for the treatment of the porous body, the cleaning step includes exposing the porous body to the steam of the cleaning solution. Step by step. 35. The process for producing a porous body according to item 29 of the scope of the patent application, wherein the cleaning step includes a step of immersing the porous body in a cleaning solution. 36. The process for producing a porous body according to item 29 of the scope of the patent application ', wherein after the cleaning step, the porous body is cleaned with pure water having ultrasonic energy. 37. The process for producing a porous body according to item 36 of the scope of the patent application ', wherein the porous body has a region with a porosity of less than 70%. 38. The place where the perforated body is manufactured according to item 2 of item 9 of the scope of the application for patent ii 'wherein the perforated body is cleaned with pure water after the cleaning step, and after that, the perforated body cleaned is rotated Dry and further dried by degassing. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 3 9 · The process of producing porous bodies according to item 29 of the scope of the patent application, where the cleaning step includes: exposing the porous bodies to the steam of the cleaning solution 'and Therefore, the clean and porous body relatively moves from the inside of the steam to the outside of the steam to produce drying. 40. Process for manufacturing porous body according to item 39 of the scope of the patent application ', wherein the porous body has a region with a porosity of 70% or more. 4 1. Process for manufacturing a perforated body according to item 29 of the scope of patent application 'wherein the perforated body is formed on the surface of a non-porous body base member. 4 2 · Processing of porous body according to item 29 of the scope of patent application ', wherein the porous body contains a semiconductor. This paper size applies to Chinese National Standard (CNS) A4 specification (210X 297 mm) 487984 ABCD 6. Scope of patent application (please read the precautions on the back before filling out this page) 4 3 ·-a kind of processing for manufacturing bonding substrates, including The steps are: forming a porous layer by anodizing, bonding the support base to the non-porous layer formed on the porous layer, and removing the porous layer, wherein: the process further includes the step of: after the anodization is completed Clean the porous layer with a cleaning solution containing at least one of alcohols and acetic acid. 4 4 The processing of manufacturing a bonding substrate according to item 43 of the scope of the patent application, wherein after the cleaning step, the porous layer is further cleaned with pure water. 4 5 · The process for manufacturing a bonding substrate according to item 43 of the scope of the patent application, wherein the cleaning solution is an aqueous solution containing an alcohol. 46. The process for manufacturing a bonding substrate according to item 43 of the scope of the patent application, wherein the cleaning solution contains an alcohol. 4, 7 · The process for manufacturing a bonding substrate according to item 43 of the scope of the patent application, wherein the cleaning step includes the step of cleaning with a cleaning solution containing an alcohol, and the cleaning with a cleaning solution containing an aqueous solution of alcohol. step. 48. The process for manufacturing a bonding substrate according to item 43 of the scope of the patent application, wherein the cleaning step includes the step of exposing the porous layer to the vapor of the cleaning solution. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 9 · The process of manufacturing the bonding substrate according to item 43 of the scope of the patent application, in which the cleaning step includes the step of immersing the porous layer in the cleaning solution 05, according to the application The process of manufacturing a bonded substrate according to item 43 of the patent, wherein after the cleaning step, the porous layer is cleaned with pure water having ultrasonic energy. This paper size applies to China National Standard (CNS) A4 (210X297 mm) ~ 487984 A8 B8 C8 D8 VI. Application for patent scope 51. According to the application of the scope of patent application scope 50, there is a hole body Has a porosity area of less than 70%. (Please read the precautions on the back before filling out this page) 5 2 · According to the scope of patent application No. 50, the process of manufacturing the bonding substrate, in which after the cleaning step, The perforated layer is cleaned with pure water, and after that, the cleaned perforated layer is spin-dried. 5 3. The process of manufacturing a bonding substrate according to item 4 of the scope of patent application, which further includes the step of: oxidizing The porous layer forms an oxide film on the surface of the hole wall of the porous layer. 5 4 · The process of manufacturing a bonding substrate according to item 43 of the patent application scope, wherein the porous layer contains a semiconductor. 5 5 A method for forming a substrate with a porous layer and a non-porous layer on the porous layer includes the following steps: anodizing the non-porous substrate to form a porous layer on the surface of the non-porous substrate; Before the porous layer is on the porous layer, clean the porous layer with a cleaning solution containing at least one of alcohols and acetic acid; and after completing the cleaning step, epitaxially grow a non-porous layer on the porous layer. The paper size printed by the Ministry of Intellectual Property Bureau ’s Consumer Cooperatives applies the Chinese National Standard (CNS) Α4 specification (210 X 297 mm)
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