TW486609B - Electron-beam lithography system and alignment method - Google Patents

Abstract

Disclosed are an electron-beam lithography system employing an optical mark detector and having a distance of movement, by which a stage must be moved, minimized, and an alignment method. The electron-beam lithography system consists mainly of an electro-optical column, a control unit, a stage moving mechanism, a mark detector, and at least two optical mark detectors. The electro-optical column accommodates an electron beam source, a converging unit for converging an electron beam output from the electron beam source, and a deflecting unit for deflecting the electron beam. The control unit controls the converging unit and deflecting unit. The stage moving mechanism moves a stage that holds a sample to which an electron beam is irradiated. The mark detector measures electrons reflected when a position detection mark inscribed on the sample or stage is scanned with an electron beam, and detects the position of the position detection mark from a signal of detected reflected electrons. The at least two optical mark detectors optically detect the position of a position detection mark.

Description

486609 A7 卜 正 AP # · ,! _B7_ 祢 充 j V. Description of the invention (I) Background of the invention 1. Field of the invention The present invention relates to an electron beam lithography system for detecting position detection marks for determining exposure positions. The system is based on measuring the electrons reflected when the position detection mark is scanned by the electron beam, and by using an optical mark detector for optically detecting the position detection mark. The invention also relates to an alignment method for determining the exposure position of an electron beam lithography system. 2. Description of related technologies Recently, it was pointed out that the optical pattern fossil printing method includes stepping and repeating lithography methods and the magnification ability has reached the limit. The electron beam lithography method is remarkable in that it can obtain finer patterns. Figure 1 shows the basic configuration of an electron beam lithography system. The electron grab 11 is a filament made of LaB6 and the like and can emit an electron beam. The electron beam emitted by the electron grab 11 is accelerated, passes through the blank electrode 12 and then is converged by the first lens 13 on the beam forming slit 14. The electron beam is further focused on the aperture 17 by a second lens 16. At this time, the east reshaping electrostatic deflector 15 is used to adjust the beam direction so that the electron beam is reshaped to have a predetermined shape. The reshaped electron beam is enlarged by the third lens 19 and converged by the fourth lens to form an image on the exposed surface. The electron beam irradiation position is determined by the deflection amplitude caused by the position-defining electrostatic deflector 21. The detailed description of the position where the electron beam is irradiated on the sample 100 is detected by scanning the position detection marks engraved on the sample using the electron beam scanning, and then measuring the reflected and scattered electrons using the electron deflector 22. In fact, in addition to these components, a plurality of electrostatic deflectors and electromagnetic deflectors are included. Delete the deflection here. This paper size is applicable to China; Home Standard (CNS) Α4 size (210X297 mm) (Please read the precautions on the back before filling this page) 0 、 τ · 4 486609

_ _ Description of the invention (The device. The housing that houses these components is called a photocolumn. Reference number 10 indicates the photocolumn. The control circuit 8 controls the components combined in the photocolumn. Reference number 23 indicates the optical detection of position detection Optical mark detector for measuring marks. Referring to Figures 2A and 2B, the optical mark detector 23 will be explained briefly. As mentioned above, the position detection mark (alignment mark) is used to define the exposure position to be engraved on each wafer. On the sample 100. When the sample 100 is exposed to the electron beam, the mark is scanned with the electron beam, and the reflected and scattered electrons are measured by the electron detector 22. In this way, the position of the mark is detected, and the exposure position is based on the The mark is determined as a reference point. The mark is flat as shown in Figure 2A. The mark is scanned in the X and Y directions to detect the edge position. The mark is locked on the sample 100 by the base film layer 101 as shown in Figure 2B. The film 11 is formed into a layer on the base film layer, and the film layer 103 is finally accumulated. When the film layer 103 is accumulated, it has a step portion overlapping the symbol 11. The photoresist 104 is added to the film layer and made Electron beam scanning. Measure the reflected electrons. Because the film layer 103 and the photoresist 104 have different densities from each other, the reflection state of the electron beam changes at the step portion. This causes the reflected electronic signal to change, and the surface of the photoresist 104 is not completely flat. Instead, it has a slightly overlapping step mark 110. In fact, the mark is based on the information of the step portion of the photoresist surface and the information detection of the interface between the photoresist and the thin film layer 103. By observing the change of the reflected electronic signal, the electron beam is displayed The position of the stepped part of the deflected coordinate system, in other words, the position of the displayed mark 110. The exposed position is determined by using the position of the measured mark 110 as a reference point so that the circuit patterns are aligned with each other. The formed mark 110 is commonly used to form Later, multiple layers. In addition, this paper size is applicable to China Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page) • 、 可 | -line 丨 5 486609

V. Description of the invention (3) (Please read the notes on the back before filling in this page) Each time a layer is formed, the mark used to form the next layer can be formed without errors. In other words, different symbols can be used for each layer. In addition, the mark 110 is formed on the sample 100 instead of the base film layer 101, or may be formed on the multilayer film layer 101. Semiconductor integrated circuits are intended to be integrated at higher densities as microprocessing technology advances. The performance of the microprocessing technology required is more severely evaluated. A polishing step such as a chemical mechanical polishing (CMP) step is employed to keep the surface of the device flat, so that exposure can be successfully achieved in each exposure step. When the CMP step is used to form the thin film layer 103, the step portion of the thin film layer of the coincident mark 110 is lowered or even completely flat. This makes it impossible to use the position of the electron beam detection mark. For the foregoing reasons, the optical mark detector 23 is used. The optical mark detector 23 can detect the difference between the mark 110 and the thin film layer 103 through the photoresist 104, even if the step portion of the thin film layer 103 overlapping the mark 110 is flat. As shown in FIG. 2B, the optical mark detector 23 emits light from the light source 29 through the lens 28, the beam splitter 25, and the objective lens 24 to the sample surface. The objective lens 24 forms an optical image of the surface of the object, in other words, the mark 110 at the position of the slit 26. The optical sensor 27 is located behind the slit 26 and detects the amount of light passing through the slit 26. The moving platform 31 passes the image of the mark 110 through the slit 26. By changing the optical sensor 27 in this way, the edge of the mark 110 can be detected. The optical mark detector 23 may belong to any of a variety of types. Regardless of the type, the optical mark detector 23 is slightly bulky. The space between the position-defining electrostatic deflector 21 and the fourth lens 20 or the sample 100 is too narrow, so that the optical mark detector 23 cannot be interposed therebetween. Therefore, by way of example, the optical mark detector 23 is positioned by the side of the photocolumn 10. Regardless of the size of the paper, 8 Chinese standards (CNS) A4 (210X297 mm) are applicable. 6 486609

_ V. Description of the Invention (4) The type of optical marker, the marker ιι〇 must be located directly below the optical marker pre-tester 23, and the sample 1GG marker 11 will be detected. Referring back to Figure 1, the sample 100 is placed on the platform 31. The platform 31 can be moved in the Y and Y directions by a two-dimensional moving mechanism. Figure 3 shows an example of a two-dimensional moving mechanism. The X-direction moving mechanism is mounted on the base 33. The DC servo motor 45 is driven to facilitate moving the X mobile station 32 in the x direction. The γ-direction moving mechanism is set up at the X mobile station 32. By driving the money servo motor 46, the platform 31 moves in the γ direction. The movement amplitude made by the platform 31 is measured by a # 1 laser interferometer. The laser beam emitted by the frequency-stabilized laser 36 is divided into two beams, and the X-direction laser interference unit 37 and the Υ-direction laser interference unit 38 are input. Both units are fixed to the base 33. The laser beam incident on the x-direction laser interference unit 疋 37 is further divided into two beams and emitted. One of the laser beams 42 is reflected by the reference mirror fixed to the base 33 in the opposite direction, and returns to the laser interference unit 37 in the X direction. The other laser beam 41 is reflected by the mirror 34 fixed to the platform 31 in the opposite direction, and returns to the laser interference unit 37 in the x direction. The two returned laser beams are mixed inside the laser interference unit 37 in the x-direction, thus generating interference fringe. When the platform 31 moves in the χ direction, the position of the mirror 34 changes. This interferes with the edging to change. Taking these changes into consideration, it is possible to measure the magnitude of the movement in the x direction caused by the platform 31. This applies equally to the γ-direction laser interference unit 38. A reference mirror 40 fixed to the base 33 reflects a laser interference unit 43 from the gamma direction laser interference unit 43 in an opposite direction. The single stage 31 has a mirror 35o 35 which reflects the laser beam 43 emitted from the gamma-direction laser interference unit 38 in the opposite direction. In this way, the magnitude of movement caused by the platform 31 in the γ direction can be measured. 38 mirror (please read the precautions on the back before filling this page)

Can I: Line-This paper is suitable for g-standard (CNS) A4 specifications (2 offering 297 public 7 486609 A7 B7 V. Description of the invention (5) 〇Mirror 34 and 3 5 Although the platform 31 is still moving, it must be reflected by X Laser beams 41 and 43 emitted by the laser interference units 37 and 38 in the directional and γ directions. As illustrated, the lengths of the mirrors 34 and 35 must be equal to or greater than the length equivalent to the moving range of the platform 31. Figure 1 shows The control unit 8 generates the control signals output from the electronic detector 22 and the optical mark detector 23 and the pattern data obtained therefrom, and controls the components combined with the photoelectric column 10 and the two-dimensional moving mechanism. The movement of the platform 31 1 The range will be discussed with reference to Figs. 4A and 4B. Fig. 4A shows the center of the photocolumn 10 and the center of the sample 100. The irradiation range of the electron beam is a narrow area surrounding the center of the sample 100. Therefore, in order to expose the 100 area of the sample, the platform Need to move so that the exposed area of sample 100 is located at the center of photocolumn 10. For simplicity, the entire surface of sample 100 is regarded as the exposed area. Therefore, the platform is moved from the position shown in Figure 4A in the opposite X and γ directions for a period equal to the sample The length of the radius. As mentioned above, in order to detect the mark 110, the mark 110 needs to be positioned just below the optical mark detector 23. Assuming that the mark 110 is located around the sample 100, the platform needs to be moved so that the mark 11 is located exactly at Below the optical mark detector 23. Figure 4B shows that the leftmost mark 110 of the sample 100 is just below the optical mark detector 23. As in the Y direction, the platform 31 needs to be moved up and down from the position shown in Figure 4A. The downward movement is equivalent to the length of the sample radius. The moving distance of the platform in the γ direction must be specific to the diameter of the sample 100. As in the X direction, the platform 31 must be between the leftmost position and the position shown in Figure 4B, which is equivalent to the length of the sample radius. The size of this paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)% Order --------- Intellectual Property Bureau, Ministry of Economic Affairs Printed by Employee Consumer Cooperatives 609

Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention (6). The moving distance of the platform in the X direction is the diameter of the sample 100 and the distance between the center of the photocolumn and the center of the optical mark detector 23. When using the optical mark detector 23, the moving distance of the platform 31 is longer than the distance L between the center of the photo post 10 and the center of the optical mark detector 23. As mentioned before, the mirrors 34 and 35 that reflect the laser beam from the laser interferometer need to have a length equal to or greater than the moving distance of the platform 31. When the length is extended in the X direction, the length of the mirror 34 needs to be increased accordingly. Since the mirror 34 is fixed to the platform 31, the platform 31 needs to be lengthened. As a result, the cost of the mirror 34 and the platform 31 is increased. In addition, the increase in the size of the platform 31 causes the movement accuracy of the platform 31 and the performance of the mirror 34 to deteriorate. As a result, the accuracy of detecting the moving distance eventually deteriorates. In addition, as the size of the platform 31 increases, the platform 31 becomes heavy. The result is poor control efficiency. SUMMARY OF THE INVENTION The object of the present invention is to realize an electron beam lithography system, which uses an optical mark detector, which has a platform that needs to be moved to a minimum, so as to provide low-cost and high-precision positioning, and to achieve electron beam lithography. Systematic alignment method. To achieve the foregoing object, an electron beam lithographic printing system according to the present invention includes a plurality of optical mark detectors. The electron beam lithographic printing system according to the present invention is mainly composed of a photo post, a control unit, a platform moving mechanism, a mark detector and an optical mark detector. The photocolumn includes an electron beam source, a converging device for converging the electron beam output from the electron beam source, and a deflection device for deflecting the electron beam. The control unit controls the convergence device and the deflection device. The platform moving mechanism moves to accommodate the size of the paper to be irradiated with the electron beam. Applicable to China National Standard (CNS) A4 (2) 0 X 297 mm.----------- ti II! 11 I! 11 -(Please read the precautions on the back before filling out this page) 9 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 486609 A7 _______ B7 V. Description of the invention (Sample platform. Marker measurement when the position detection mark is engraved The electrons reflected when the sample or the platform scans with the electron beam, so as to detect the position of the position detection mark. The optical mark detector optically detects the position of the position detection mark. This is included in the electron beam lithography system. At least two optical mark detectors. Two of the at least two optical mark detectors need to be located in opposite directions relative to the central axis of the photocolumn. According to the present invention, the alignment method of the electron beam lithography system to be executed is' position debt The position of the measuring mark is detected by the optical mark detector that is close to the position detection mark. This shortens the moving distance of the platform. The positional relationship between the photo post and the optical mark detector is Measure with two marks that can be measured. The relative positional relationship between the plural optical mark detectors is calculated from the positional relationship between the optical mark detector and the photoelectric column. The mark used to measure the positional relationship need not be engraved on the sample Instead, the upper part can be engraved on the platform. Once the positional relationship is measured, the position detection mark on the sample does not need to be detected by electron beam scanning. The exposure position can be determined based on the position detected by the optical mark detector. The distance between each optical mark detector changes with temperature, so if there is a better calibration exposure position required. If the sample volume is large, the distance between the optical mark detectors on both sides of the photocolumn must be smaller than the sample diameter. In this example The moving distance of the platform is equal to the sample size. Although there is an optical mark detector, the moving distance does not need to be extended. In addition, the multiple optical mark detector can simultaneously detect the position detection marks. In this example, the 'plural position detection marks are used approximately simultaneously. At least two optical mark detectors (please read the precautions on the back before filling this page) — II ---- ^ · 11111111. 10-Five 'Invention Description (8) Detection .This facilitates shortening the time required for alignment. Measurement and correction The positional relationship between the bottom of the system where the moving mechanism of the platform is fixed and the photoelectric column is changed and corrected due to vibration or brewing. For this project, a laser interferometer is used Equally measure the positional relationship between the photocolumn and the bottom of the line. It is better to measure the positional relationship between the complex optical recorder and the bottom in a similar way. Brief description of the figure. Figure 1 shows the basic of the conventional electron beam lithography system. Configuration; Figure 2A shows the shape of the position detection mark; Figure 2B shows an example of the configuration of the optical mark detector; Figure 3 shows a two-dimensional movement mechanism for an electron beam lithography system; Figures 4A and 4B FIG. 5 is an explanatory diagram of the moving distance that the platform needs to be moved according to the related technology. FIG. 5 shows the positional relationship between the components of the electron beam lithography system according to the first specific example of the present invention. Figures 6A and 6B printed by the cooperative are explanatory diagrams of the moving distance required to move the platform according to the first specific example; and Figure 7 shows the second according to the present invention The positional relationship between the components in the electron beam lithography system; Figure 8A and Figure 8B are explanatory diagrams of any scene detection mark scene detected according to the second specific example; and Figure 9 shows the basis for The third specific example of the present invention is applicable to the Chinese national standard (CNS) A4 specification (210 X 297 mm) at the paper size of the electron beam lithographic printing plate. -11- 486609 A7 ____ B7____ 5. Description of the invention (9) Between the components of the brush system Location relationship. Description of the preferred embodiment Fig. 5 shows the relationship between the components of the electron beam lithographic printing system according to the first embodiment of the present invention. As illustrated, the first specific example differs from the related technology in that it includes two optical mark detectors 23A and 23B. The other components are the same as those of the related art shown in FIGS. 1 to 3. In the electron beam lithography system of the first specific example, the two optical mark detectors 23A and 23B are located in opposite directions with respect to the axis of the photocolumn 10. It is assumed that the distance between the center of the photocolumn 10 and the center of the optical mark detector 23A or 23B is L, and the distance between the optical mark detectors 23A and 23B is 2L. The movement range of the platform 31 of the electron beam lithography system included in the first specific example in the Y direction is equal to the related art. The center axis of the photocolumn 10 and the center of the two optical marker detectors 23A and 23B must be movable between the upper and lower edges of the sample 100. In other words, the photocolumn 10 and the two optical mark detectors 23A and 23B need to be able to move a distance equivalent to 100 diameters or longer of the sample. Therefore, the length of the mirror 35 is equal to or larger than the diameter of the sample 100. The moving range of the platform in the X direction is described with reference to Figs. 6A and 6B. Fig. 6A shows that the right optical mark detector 23A is located right above the position detection mark 110 of the sample 100. FIG. 6B shows that the left optical mark detector 23B is located just above the left position of the sample 100 and the test mark 11 〇. In the first specific example, the position detection mark 丨 10 whose center position is on the right-hand side of the sample is detected using the right optical mark detector 23 A. The position detection mark 110 relative to the center position on the left-hand side of the sample is detected by the left optical mark detector 23B. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the back Please fill in this page again for attention) -AW -------- tr --------- 0, printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -12-486609 A7 V. Description of Invention (). When the center of the sample 100 is just below the right optical mark detector 23 A, the platform 31 moves to the extreme right. When the center of the sample 100 is just below the left optical mark detector 23B, the platform 31 moves to the extreme Left. In order to achieve this state, the platform 31 needs to be moved from the position shown in Figure 5 to the right and left by a distance of l. The platform needs to move in the X direction so it is 2L. As stated above, when using an optical mark detection When moving the platform, the movement distance of the platform in the X direction is the sum of the diameter of the sample 100 and the distance between the photocolumn 10 and the optical mark detector L. If 1 ^ is smaller than the diameter of the sample 100, the movement distance needs to be less than the related technology. There are electron beam lithography systems, usually [of less than sample 100 When the present invention is implemented, the movement of the platform 31 can be reduced. As a result, the length of the mirror 34 can be shortened. When the alignment is performed with the electron beam lithography system of the first specific example, the alignment is performed first. It is used for calibration and use A reference sample (wafer) 100 with a mark 丨 10 formed on it. Scanning with an electron beam or using optical mark detectors 238 and 238 圮 can detect the mark 〇. One or more marks 11 can be formed on The left half of the reference sample 100 can be formed equally on the right half. The reference sample 100 is placed on the platform 31. The mark 110 is scanned by the electron beam, so the measurement coordinate system defines the positional relationship of # 光柱 10 to the moving mechanism, The optical mark detector 23A is then used to position the reference mark 11 on the right half of the reference sample. Measure the positional relationship of the optical mark picker 23α on the coordinate system defined by the moving mechanism. Similarly, use the optical mark The detector 23B detects a mark 110 'located at the left half of the reference sample, and measures the positional relationship of the optical mark detector 23B of the moving mechanism defined by the coordinate system. Based on the positional relationship, the paper ruler is calculated. The degree applies to the Zhongguanjia Standard (CNS) A4 specification G χ 297 Gongchu-13-486609 A8 B8 C8 D8 The positional relationship between the photo post 10 and the optical mark detectors 23A and 23B. As a result, two optical mark detectors can be calculated. The positional relationship between 23A and 23B. Exposure when calibration is completed. The position detection mark 11 engraved on the sample cannot be detected by using the electron beam scanning exposure. In order to detect the position detection mark 110 on the right half of the sample, The position detection mark can be detected just below the right optical mark detector 23 A. The platform 31 moves the distance calculated from the detection position of the mark 110 and the position relationship calculated through calibration. The resulting sample can be exposed to the electron beam at a predetermined location. The same applies to other position detection marks. It is used to detect the position detection mark 丨 丨 0 located on the left half of the sample, and the left optical mark detector 23B is used. Even after one calibration, the positional relationship may change with temperature changes, etc. In this case, the reference sample is used instead of the sample to perform the calibration. In addition, the position relationship between the bottom of the system fixed by the platform moving mechanism and the photo post changes with vibration or temperature. The positional relationship of the photocolumn to the bottom of the system varies with the laser interferometry used. This corrects the exposure position. The positional relationship between the optical mark detector and the bottom also changes. Therefore, it is better to use laser interferometry for the change of positional relationship. The value that is preferably used to align the pattern must be corrected based on the detection results. Fig. 7 shows the relationship between the components of the electron beam lithographic printing system according to the second specific example of the present invention. As an example, the difference between the second specific example and the first specific example is that the detection marks of calibration 51 and 52 are engraved on the platform 31. For calibration, the right position detection mark 51 scans with an electron beam to easily detect the position. At the same time, as shown in Figure 8A, the position detection mark 51 is marked by the right optical mark (please read the precautions on the back before filling this page) | ------- Order --------- Line ' Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -14-486609 A8 B8 C8 D8

Printed by M * Industrial and Consumer Cooperatives of the Ministry of Economic Affairs, Intellectual Property and Production Bureau. The detector 23 A detects it and measures the positional relationship between the photo post and the right optical mark detector 23 and 8. Then the position of the left position detection mark 52 needs to be detected by electron beam scanning. At the same time, as shown in FIG. 8B, the position detection mark 52 is based on the left optical mark detector 23B to detect the positional relationship between the hand-held photocell and the left optical mark detector 23B. The other components are the same as the first specific example. In the first specific example, a reference sample is used for calibration. The reference sample should be replaced every time the calibration is performed. Conversely, according to the second specific example, the calibration can be performed using the sample 100 to be exposed on the platform 31. This allows easy calibration even during exposure, if required. Fig. 9 shows the relationship between the components of an electron beam lithographic printing system according to a third specific example of the present invention. As an example, the difference between the third specific example and the second example is that the diameter of the sample (wafer) 1） is larger than the distance between the two optical mark detectors 23A and 23B by 2L. In this example, the positions of the two markers 110 of the sample 100 are close to the optical marker detectors 23A and 23B, respectively. In this case, a mark is detected using one of the optical mark detectors. Just after that, another optical mark detector is used to detect another mark. In this case, the movement range of the platform to be moved is limited, so the time required to detect the mark can be shortened. As described so far, according to the present invention, an electron beam lithographic printing system is provided, wherein the position detection mark is detected using an optical mark detector. Because the distance that the platform must move can be shortened, the cost of the mirror and platform used to detect the magnitude of the movement can be reduced, and the platform can be designed to be short and compact. As a result, it is possible to improve the accuracy of the platform movement or the accuracy of measuring the movement distance. In addition, the control efficiency of the platform 31 can be improved. 1 -------- ^ --------- ^ (Please read the notes on the back before filling this page)

-15-486609 A7 B7 Description of Invention (3) ....-.…. 一 —. 一. One component reference table 8 ... Control circuit 28 ... Lens 10 ... Photo post 29 ... Light source 11 ... electronic grab 31 ... platform 12 ... blank electrode 32 ... X movable station 13 ... first lens 33 ... base 14 ... slit 34-5 ... mirror surface 15 ... static deflection 36 ... Step-stabilized laser 16 ... Second lens 37 ... Laser interference unit 17 in the X direction ... Aperture 38 ... Laser interference unit 19 in the Y direction ... The third lenses 39, 40 . " Reference mirror 20 .... Fourth lens 41-3 ... Laser beam 21 ... Electrostatic deflector 45-6 ... DC servo motor 22 ... Electronic detector 51-2 ... Position Detection units 23, 23Α-Β ... Optical mark detector 100 ... Sample 24 ... Objective lens 101-3 ... Thin film layer 25 ... Beam splitter 104 ... Photoresistor 26 ... On Seam 110… Mark 27 ... Optical sensor (please read the precautions on the back before filling this page) • Order. Φ, This paper size applies to China National Standard (CNS) Α4 size (210X297 mm) 16

Claims (1)

486609 Bulletin A8 B8 C8 D8 Patent application scope No. 881 16736 Application patent application scope amendment 90. 12. 25. 1. An electron beam lithographic printing system comprising: a photo post to accommodate an electron beam source, and a convergence device for converging from the electron beam source An electron beam and a deflection device for deflecting the electron beam; a control unit for controlling the converging device and the deflection device; a platform moving mechanism for moving the platform containing the sample to be irradiated with the electron beam; a mark detector for measuring Measure the position of the position detection mark when it is engraved on the sample or on the platform using electron beam scanning, and detect the position of the position detection mark from the detected reflected electronic signal; and optical mark detection The detector is used for optically detecting the position of a position detection mark, and it includes at least two optical mark detectors. 2. The electron beam lithographic printing system according to item 1 of the patent application scope, wherein at least two of the at least two optical mark detectors are arranged in a direction substantially opposite to the center axis of the photocolumn. 3. If the electron beam lithography system of item 1 of the patent application scope further includes an ectopic measurement mechanism for measuring the position change between each optical mark detector and the bottom of the electron beam lithography system. 4. The electron beam lithography system as described in the third item of the patent application, wherein the ectopic measurement mechanism is a laser interferometer, and each optical mark detector includes a reflecting mirror for reflecting light from the combined electron beam. The laser light emitted by the laser interference unit at the bottom of the lithographic printing system, and the laser light is made in this way (please read the precautions on the back before filling in this page). Customize the paper size Applicable to China: Home Standard (CNS) A4 specifications UlOX297 mm) 17 486609 A8 B8 C8 D8 Patent application scope Return laser interference unit. (Please read the precautions on the back and fill in this page first) 5 · —An alignment method used in the electron beam lithography system, where the electron beam lithography system is as described in item i of the patent application scope, where The position of a position detection mark is detected using an optical mark detector near the position detection mark. 6. The alignment method according to item 5 of the scope of patent application, wherein it is used to detect a position detection mark using an optical mark detector, the position detection mark is located just below the optical mark detector, and a plurality of position detection marks therein The 'location' position is detected approximately simultaneously using at least two optical mark detectors. 7 · —An alignment method for implementation in an electron beam lithography system, wherein the electron beam lithography system is the position of one of the position detection marks as described in item 2 of the patent application scope. Optical mark detector for measuring marks. -Line 丨 8 · The alignment method according to item 7 of the scope of patent application, which is used to detect a position detection mark using an optical mark detector, and the position detection mark is located just below the optical mark detector, and a plurality of positions thereof The positions of the detection marks are detected by at least two optical mark detectors at the same time. 9. · An alignment method for implementation in an electron beam lithographic printing system, wherein the electron beam lithographic printing system is as described in item 3 of the scope of patent application, and the position of a position detection mark uses proximity position detection Detected by optical mark detector. 10. The alignment method according to item 9 of the scope of patent application, wherein it is used to detect a position detection mark using an optical mark detector. The position detection mark is located on this paper. The two Chinese standards (CNS) A4 specifications apply ( (210 × 297 mm) 18 486609 A8 B8 One C8 ____D8 6. Patent application scope ιΓ The position of the plural optical position detectors and the position of the plural position detection marks are detected by at least two optical position detectors at the same time. π — an alignment method for implementation in an electron beam lithography system, where the electron beam lithography system is as described in item 4 of the patent application 'where one of the position detection marks is located using proximity position detection Detected by optical mark detector. 12. The alignment method according to item η of the scope of patent application, wherein it is used to detect a position detection mark using an optical mark detector, the position detection mark is located just below the optical mark detector, and a plurality of position detection marks therein The location is detected approximately simultaneously using at least two optical mark detectors. (Please read the precautions on the back before filling out this page) 4 This paper size applies to China National Standard (CNS) Α4 size (210X297 mm) 19