TW483183B - Manufacture method of thermopile sensor device using combined sacrificial layer and silicon bulk etching process - Google Patents

Manufacture method of thermopile sensor device using combined sacrificial layer and silicon bulk etching process Download PDF

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TW483183B
TW483183B TW089128366A TW89128366A TW483183B TW 483183 B TW483183 B TW 483183B TW 089128366 A TW089128366 A TW 089128366A TW 89128366 A TW89128366 A TW 89128366A TW 483183 B TW483183 B TW 483183B
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insulating layer
wire
etching
insulating
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Jeng-Shiun Du
Jeng-Guo Li
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Asia Pacific Microsystems Inc
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Abstract

This invention provides a manufacture method of thermopile sensor device using polysilicon or amorphous silicon as a sacrificial layer and employing combined etching process of sacrificial layer and silicon bulk to etch the silicon substrate underneath the floating plate. This reduces the etching time and improves yield and also device performance. A resistor is made on the floating plate as a heater for electrical calibration and measurement. The heater has a radiation shape, which makes the hot end of the thermocouple go deep into the floating plate to improve radiation absorption characteristics of device and also makes the hot end of the thermocouple contact with the heater to increase heat transfer efficiency of the heater.

Description

483183 案號 89128366 年 月 曰 修正 五、發明說明(1) <發明之範圍>483183 Case No. 89128366 Modification V. Description of Invention (1) < Scope of Invention >

本發明係有關於一種熱電堆感測元件及其製造方法, 利用多晶矽或非晶矽之犧牲層與矽體型蝕刻併合之蝕刻方 式以加速蝕刻速度,並用輻射型加熱器使在加熱器與熱電 堆材料層使用相同的材料層之情形下,熱電堆之熱端能深 入黑體吸收板之内部,增加其紅外線吸收之效率,並使各 熱電偶之熱端能與加熱器相鄰接,以增加加熱器之熱傳輸 效率。其犧牲層之使用可縮短蝕刻時間以避免長時間蝕刻 所成之良率之降低,加熱器之使用可用於元件之電子校 正,以避免材料老化所造成之量測誤差,而其輻射形之結 構可同時提高元件之紅外線吸收效率與加熱器之熱傳輸效 率,並可使加熱器與熱電堆使用相同的材料層而無須增加 光罩以及製程的數目,以簡易製程並降低成本。 <發明之背景>The invention relates to a thermopile sensing element and a method for manufacturing the same, using an etching method in which a sacrificial layer of polycrystalline silicon or amorphous silicon is combined with a silicon body type etching to accelerate the etching rate, and a radiant heater is used to heat the heater and the thermopile. When the same material layer is used for the material layer, the hot end of the thermopile can penetrate the inside of the black body absorption plate, increase the efficiency of infrared absorption, and make the hot end of each thermocouple adjacent to the heater to increase heating. Heat transfer efficiency. The use of a sacrificial layer can shorten the etching time to avoid a reduction in yield caused by long-term etching. The use of a heater can be used for electronic correction of components to avoid measurement errors caused by material aging, and its radial structure The infrared absorption efficiency of the element and the heat transmission efficiency of the heater can be improved at the same time, and the same material layer can be used for the heater and the thermopile without increasing the number of photomasks and processes to simplify the process and reduce the cost. < Background of invention >

利用物體發出紅外線以測量物體溫度之溫度偵測器的 應用十分廣泛,除了溫度測量之外,還可應用於人體感 測,如工業自動化及保全監視方面的動作感測器、紅外線 照像機、攝影機、以及醫療方面的人體溫度分佈之影像計 量等各方面。其原理多為利用紅外線照射在元件上造成的 溫升所改變之材料物理特性,轉變成電氣特性輸出。常見 的感測元件有焦電型感測元件、熱阻型感測元件、及熱電 堆感測元件等。 若從製造方法來比較上述元件,如果感測器之製程能 與現有之半導體製程相容,其開發及製造的成本也就越Temperature detectors that use objects to emit infrared rays to measure object temperature are widely used. In addition to temperature measurement, they can also be used for human body sensing, such as motion sensors, infrared cameras, Camera, and medical measurement of human body temperature distribution and other aspects. The principle is mostly to change the physical characteristics of the material by the temperature rise caused by infrared radiation on the element, and to convert it into electrical characteristic output. Common sensing elements include pyroelectric sensing elements, thermal resistance sensing elements, and thermopile sensing elements. If the above components are compared in terms of manufacturing methods, if the manufacturing process of the sensor is compatible with the existing semiconductor manufacturing process, the cost of development and manufacturing will also increase.

第4頁 483183 案號 89128366 A_η 曰 修正 五、發明說明(2) 低,且若能將 但可增加元件 種紅外線感測 高,故開發與 製程簡易性上 而就後製 件的微機電製 作浮板結構; 時間完成蝕刻 刻以掏空浮板 正面钱刻法易 元件之特性。 用犧牲層與矽 縮短蝕刻時間 另夕卜,習 熱所造成浮板 後從其電壓差 環境變化,熱 此專利則提案 阻型加熱器, 上述原因所造 成輻射形,使 形下,使熱電 加熱器能鄰接 元件與 功能, 器中, CMOS 製 皆有其 程之微 程後製 而背面 ,而正 下之矽 在浮板 在此專 體型蝕 放大電 並能降 熱電堆 程相容 相當大 機電製 程常為 蝕刻法 面#刻 基板, 下面留 利則提 刻併合 知之熱電 的溫升, 直接計算 電堆材料 一新的熱 而可利用 成之特性 其能在熱 偶之熱端 熱電偶之 路等CMOS電 低訊號界面 感測元件與 的熱電堆感 的優點。 程來看,習 從背面或正 之蝕刻深度 法則須從非 亦須花相當 下山丘狀之 案一新的熱 之蝕刻方式 路一併製作,則不 的雜訊。而上述各 CMOS製程之相容性 測元件,在成本與 知之熱電堆感測元 面蝕刻矽基板以製 較深,必須花較長 <1 00>晶面側向蝕 長的蝕刻時間。且 矽基板殘餘,影響 電堆製作方法,使 以加速蝕刻速度, 堆感測 轉換成 被測物 之經久 電堆元 後述之 漂移所 電堆與 能深入 熱端, 器,係以 熱電堆輸 體之溫度 劣化等影 件結構, 電子校正 產生的誤 加熱器使 紅外線吸 同時增加 浮板所 出端之 。而此 響而產 其在浮 法來測 差。且 用同一 收板之 紅外線 吸收之輻射 電壓差,然 方法則易受 生漂移。在 板上有一電 量,以避免 其加熱器做 材料層之情 内部,並使 吸收效率與Page 4 483183 Case No. 89128366 A_η Revision V. Description of the invention (2) Low, and if the infrared type can be increased but the component types can be increased, the development and manufacturing process are simplified, and the micro-electromechanical production of the finished product is floating. Board structure; time to complete the etching and engraving to hollow out the characteristics of the easy-engraving element on the front of the floating plate. Use the sacrificial layer and silicon to shorten the etching time. Besides, the temperature of the floating plate caused by the heat changes from the voltage difference environment. This patent proposes a resistive heater. The above-mentioned reasons cause the radiation to shape, and the thermoelectric heating. The device can be adjacent to components and functions. In the device, the CMOS system has its own micro-process and back. The silicon on the floating plate is specifically etched to amplify the electricity and can reduce the thermoelectric stack. The process is quite large. The electromechanical process is usually etching.法 面 # Engraved substrate, Liuli below engraved and known thermoelectric temperature rise, directly calculates the new heat of the stack material and can be used to develop the characteristics of the CMOS electrical low signal such as the thermocouple path on the hot end of the thermocouple Interface sensing elements have the advantages of thermopile sensing. From the perspective of process, the rule of Xi from the back or positive etching depth must be produced from a new hot etching method, but also noisy. For the above-mentioned CMOS process-compatible measuring elements, it is necessary to etch the silicon substrate to make it deeper in terms of cost and know-how of the thermopile sensing element, and it must take a long time to etch the crystal surface sideways for a long time. In addition, the residual silicon substrate affects the manufacturing method of the stack, so that the stack sensor can be converted into the measured object by accelerating the etching speed, which will be described later. The stack and the deep stack can be penetrated into the hot end. The structure of the film, such as temperature degradation, and the erroneous heater caused by electronic correction, increase infrared absorption and increase the end of the floating plate. And this caused its error to be measured in float. And the difference of the radiation voltage absorbed by the same infrared radiation is used, but the method is susceptible to drift. There is an electric quantity on the board to avoid its heater as a material layer inside and make the absorption efficiency and

第5頁 483183 案號 89128366 Λ月 曰 修正 五、發明說明(3) 加熱器之熱傳 熱電堆感 此,提 點所在 〈發 因 件及其 並提南 依 非晶矽 刻併合 元件生 可增加 另一目 依 阻型加 材料相 電偶之 接熱電 熱傳輸 為 升此一 〇 明之目此,本 製造方 元件之 本發明 塾做為 之新開 產時之 元件特 的。 本發明 熱器以 同之材 熱端能 偶之熱 效率, 達上述 輸效率。 測器之優點為製程簡單且量產的良率高,因 感測器的特性的結構正是本專利所訴求的重 的及概述〉 發明之主要目的在於提供一種熱電堆感測元 法,用以改善習知製程之缺點及不佳之處。 功能及特性。 之此種熱電堆感測元件,其採用多晶矽墊或 蝕刻時之犧牲層,以犧牲層蝕刻與矽體型蝕 發製程,藉以縮短矽基板蝕刻之時間,提高 良率。此結構並能提高蝕刻底部之平坦度, 性之穩定度並提高元件性能,此為本發明之 之此種 做為電 料層一 熱電堆感測 子校正用, 併完成。加 外線吸收板 元件,其在 此加熱器可 熱器並做成 之内部,並 外線吸收效 發明之又一目的。 浮板上加上電 使用與熱電堆 輻射型,使熱 使加熱器能鄰 率與加熱器之 製造方法,該 積一第 部份第 犧牲 犧牲 深入紅 端,以同時增加i 此為本 目的, 方法至 層材料於$夕基板表 層材料以形成一第一犧牲層;沉積一第 本發明提供 少包括下列 一種熱電堆感測元件及其 步驟:提供一矽基板;沉 面,罩幕定義並钱刻去除 .絕Page 5 483183 Case No. 89128366 ΛYue Yue Amendment V. Description of the invention (3) The heat transfer of the heater feels like this. The main point is that the generation of the element and its combination with the amorphous silicon can be increased. The other purpose of the thermoelectric heat transfer of the resistance-type plus material phase coupler is to achieve this goal. The invention of the manufacturer's component is unique to the component at the time of new production. The heat exchanger of the present invention achieves the above-mentioned transmission efficiency with the same thermal efficiency of the same hot end energy. The advantage of the detector is that the manufacturing process is simple and the yield of mass production is high. The structure of the characteristics of the sensor is exactly what is claimed in this patent. The main purpose of the invention is to provide a thermopile sensing element method. To improve the shortcomings and disadvantages of the conventional process. Functions and features. Such a thermopile sensing element uses a polycrystalline silicon pad or a sacrificial layer during etching, and the sacrificial layer etching and silicon body type etching process are used to shorten the etching time of the silicon substrate and improve the yield. This structure can also improve the flatness of the etched bottom, the stability of the properties, and the performance of the device. This is the method of the present invention, which is used to correct the electrode layer and thermopile sensor and is completed. An external line absorbing plate element is provided in which the heater can be heated and formed inside, and an external line absorption effect is another object of the invention. The use of electricity and the thermopile radiation type are added on the floating board to make the heat to the heater and the heater manufacturing method. The first part of the product sacrifices the red end to increase the i at the same time. A method for forming a first sacrificial layer on a substrate material to form a first sacrificial layer; depositing a first invention provides a thermopile sensing element including the following and the steps thereof: providing a silicon substrate; a sunken surface, and a mask definition and money Carved off.

•第6頁 483183 _案號89128366_年月曰 修正_ 五、發明說明(4) 緣層於矽基板與第一犧牲層表面;沉積一第一熱電材料 於第一絕緣層表面;罩幕定義並钱刻去除部份第一熱電 料層以形成一第一導線及加熱器;沉積一第二絕緣層於 一導線與第一絕緣層之表面;去除部份第二絕緣層,以 成複數個接觸窗;沉積一第二熱電材料層於第二絕緣層 表面;罩幕定義並蝕刻去除部份第二熱電材料層以形成 第二導線,並透過前述之接觸窗使第二導線與第一導線 觸於複數個熱端及冷端;沉積一第三絕緣層於第二導線 第二絕緣層之表面;蝕刻部份第三絕緣層與第二絕緣層 以使最後一條第二導線之一部份裸露於外,用以連接至 形成之金屬墊輸出,而第一條第一導線亦可經由第二導 連接至待形成之另一金屬墊輸出;沉積一第一金屬層於 三絕緣層之上;蝕刻部份第一金屬層以形成複數之金屬 墊;沉積一第四絕緣層於第三絕緣層與複數之金屬墊上 沉積一第一黑體層於第四絕緣層之上,並以蝕刻或L i f t o f f的方法定義出黑體吸收層,用以吸收入射的紅外線; 沉積一第五絕緣層於第四絕緣層與黑體吸收層之表面; 刻部份第四絕緣層與第五絕緣層,以形成複數之打線窗 以露出金屬墊;形成複數之蝕刻孔貫穿第五、第四、第 三、第二及第一絕緣層,而使部分第一犧牲層之表面裸 於外;最後以犧牲層蝕刻與正面矽體型蝕刻併合之技術 由前述蝕刻孔進行蝕刻,以掏空浮板底下之矽基板。 根據上述之製造方法,所得到之熱電堆感測元件, 利用打線窗底下所露出之金屬墊,作為該熱電堆感測元 層 材 第 形 之 接 與 待 線 第 蝕 露 經 係 件 483183 _案號89128366_年月曰 修正_ 五、發明說明(5)• Page 6 483183 _Case No. 89128366_ Year and Month Amendment _ V. Description of the Invention (4) The edge layer is on the surface of the silicon substrate and the first sacrificial layer; a first thermoelectric material is deposited on the surface of the first insulating layer; the definition of the cover In addition, a portion of the first thermoelectric material layer is removed to form a first wire and a heater; a second insulating layer is deposited on a surface of the wire and the first insulating layer; a portion of the second insulating layer is removed to form a plurality of A contact window; depositing a second thermoelectric material layer on the surface of the second insulating layer; a mask defining and etching to remove a portion of the second thermoelectric material layer to form a second wire, and passing the second wire and the first wire through the aforementioned contact window Touching a plurality of hot and cold ends; depositing a third insulating layer on the surface of the second wire and the second insulating layer; etching part of the third insulating layer and the second insulating layer to make a part of the last second wire Exposed to connect to the output of the formed metal pad, and the first first wire can also be connected to the output of another metal pad to be formed through the second lead; a first metal layer is deposited on the three insulating layers ; Etching part of the first metal layer Forming a plurality of metal pads; depositing a fourth insulating layer on the third insulating layer and the plurality of metal pads; depositing a first blackbody layer on the fourth insulating layer; and defining a blackbody absorbing layer by etching or Liftoff For absorbing incident infrared rays; depositing a fifth insulating layer on the surfaces of the fourth insulating layer and the black body absorbing layer; engraving a portion of the fourth insulating layer and the fifth insulating layer to form a plurality of wired windows to expose the metal pads; A plurality of etching holes are formed to penetrate the fifth, fourth, third, second and first insulating layers, so that part of the surface of the first sacrificial layer is exposed to the outside; finally, the technique of combining the sacrificial layer etching and the front silicon type etching is used. The aforementioned etching holes are etched to hollow out the silicon substrate under the floating plate. According to the manufacturing method described above, the obtained thermopile sensing element uses the metal pad exposed under the wire window as the thermoelectric stack sensing element layer connection and the exposed warp system 483183. No. 89128366_ Year, month, and year of revision_ V. Description of the invention (5)

之輸出,其結構至少包含有:一矽基板;一第一絕緣層, 形成於矽基板表面;複數個第一導線,形成於第一絕緣層 表面,其中每一第一導線具有一熱端與一冷端,且第一條 第一導線之冷端係經由待形成之第二導線電連接至金屬墊 輸出;一第二絕緣層,形成於第一導線之表面;複數個第 二導線,形成於第二絕緣層之表面,且每一第二導線亦具 有熱端與冷端,第二導線之熱端分別與第一導線之熱端呈 一對一接觸,且在第二導線中,最後一條第二導線之冷端 係電連接至另一金屬墊,且金屬墊係由第一金屬層所形 成;一第三絕緣層,形成於第二絕緣層與第二導線,之表 面;一第四絕緣層,形成於第三絕緣層與前述金屬塾之表 面;一黑體吸收層,形成於第四絕緣層之表面,用以吸收 紅外線;一第五絕緣層,形成於第四絕緣層與黑體吸收層 之表面;複數之打線窗,形成於複數之金屬墊之上方,其 貫穿第五與第四絕緣層,以露出金屬墊之表面;以及複數 之蝕刻孔,形成於第五絕緣層表面,並往下延伸貫穿第 五、第四、第三、第二及第一絕緣層,用以容許第一犧牲 層與外界相通。The output has a structure including at least: a silicon substrate; a first insulating layer formed on the surface of the silicon substrate; a plurality of first wires formed on the surface of the first insulating layer, wherein each first wire has a hot end and A cold end, and the cold end of the first first wire is electrically connected to the metal pad output through the second wire to be formed; a second insulating layer is formed on the surface of the first wire; and a plurality of second wires is formed On the surface of the second insulation layer, and each second wire also has a hot end and a cold end, and the hot end of the second wire is in one-to-one contact with the hot end of the first wire, and in the second wire, finally The cold end of a second wire is electrically connected to another metal pad, and the metal pad is formed by the first metal layer; a third insulating layer is formed on the surface of the second insulating layer and the second wire; a first Four insulating layers are formed on the surface of the third insulating layer and the aforementioned metal grate; a black body absorbing layer is formed on the surface of the fourth insulating layer to absorb infrared rays; a fifth insulating layer is formed on the fourth insulating layer and the black body Surface of absorbing layer A number of wired windows are formed above the plurality of metal pads and penetrate through the fifth and fourth insulation layers to expose the surface of the metal pads; and a plurality of etching holes are formed on the surface of the fifth insulation layer and extend downward through The fifth, fourth, third, second and first insulating layers are used to allow the first sacrificial layer to communicate with the outside world.

且其上製程在製作第一或第二導線層時可同時製作加 熱用電阻或環境溫度測量用電阻。這些電阻之兩端亦各別 電連接至其他金屬墊做為電力及信號之輸出及輸入。 為讓本發明之上述和其他目的、特徵和優點能更明顯 且易於了解,下文特舉一較佳實施例,並配合所附圖式, 作詳細說明。In addition, when the first or second wire layer is manufactured on the above process, a heating resistor or a resistor for measuring ambient temperature can be manufactured at the same time. The two ends of these resistors are also electrically connected to other metal pads for output and input of power and signals. In order to make the above and other objects, features, and advantages of the present invention more obvious and easy to understand, a preferred embodiment is hereinafter described in detail with reference to the accompanying drawings.

第8頁 483183 _案號89128366_ 年月日 修正_ 五、發明說明(6) <較佳具體實施例之詳細描述> 首先請參閱「第1圖」所示,其係為本發明之熱電堆 感測元件的上視圖。此一熱電堆感測元件具有:、複數之 第一導線1 1、複數之第二導線1 2、複數之蝕刻孔1 3、一黑 體吸收層1 4、四個打線窗1 5、1 6、1 7、1 8、一中央輻射型 加熱器1 9、複數之第一、二導線連接之熱端Η、及複數之 第一、二導線連接之冷端C。 由圖中可以看出,第二導線1 2係透過熱端之接觸窗 Η,而與第一導線1 1接觸以形成電氣性之連結。而第一導 線1 1並與另一相鄰之第二導線透過冷端之接觸窗C形成電 氣性之連結,如此相接形成一串連結構,最後其兩端由第 一打線窗1 5、第二打線窗1 8做為熱電堆感測元件之輸出。 而第三打線窗1 6、第四打線窗1 7則做為電子校正用加熱器 之輸入及輸出端。 而第2圖與第3圖則分別顯示第1圖沿Α-Α’及Β-Β’之剖 面圖。 如上所述之結構,其製造方法配合「第4 (a)〜4 (〇 ) 圖」「第5(a)〜5(〇)圖」之每一製造步驟的剖面圖詳述如 下·· 首先提供一矽基板20,於前述矽基板20之上沉積一第 一犧牲層材料2 1,罩幕並蝕刻以定義第一犧牲層3 1,如 「第4(b)、4(c)圖」「第5(b)、5(c)圖」所示。其後於其 上沉積第一絕緣層2 2 ;接著在第一絕緣層2 2之表面上沈積 一第一熱電材料層,其材料可為金屬或多晶矽或非晶矽,Page 8 483183 _Case No. 89128366_ Year Month Day Amendment _ V. Description of the invention (6) < Detailed description of the preferred embodiment > First, please refer to "Figure 1", which is the thermoelectricity of the present invention Top view of a stack of sensing elements. This thermopile sensing element has: a plurality of first wires 1 1, a plurality of second wires 1 2, a plurality of etched holes 1 3, a black body absorbing layer 1 4, four wire windows 1 5, 1 6, 17, 7, 8, a central radiant heater 19, a plurality of first and second wires connected to the hot end Η, and a plurality of first and second wires connected to the cold end C. It can be seen from the figure that the second wire 12 passes through the contact window Η of the hot end and contacts the first wire 11 to form an electrical connection. The first wire 11 and another adjacent second wire form an electrical connection through the cold-end contact window C, so that they are connected to form a series structure. Finally, the two ends are connected by the first wire window 15, The second wire window 18 is used as the output of the thermopile sensing element. The third wiring window 16 and the fourth wiring window 17 are used as input and output terminals of the heater for electronic calibration. Figures 2 and 3 show the sectional views of Figure 1 along A-A 'and B-B', respectively. The structure of the above-mentioned structure, the manufacturing method of which is coordinated with each of the "4th (a) to 4th (0) drawing" and "5th (a) to 5th (0) drawing", the cross-sectional views of each manufacturing step are detailed below. A silicon substrate 20 is provided, and a first sacrificial layer material 21 is deposited on the aforementioned silicon substrate 20, and then masked and etched to define the first sacrificial layer 31, as shown in FIG. 4 (b) and 4 (c). "Figure 5 (b), 5 (c)". Thereafter, a first insulating layer 22 is deposited thereon; then a first thermoelectric material layer is deposited on the surface of the first insulating layer 22, and the material may be metal or polycrystalline silicon or amorphous silicon,

-^^89128366 曰 五、發明說明(7) 亚利用標準的黃光製程以罩幕 電材料f ’而在第-絕緣層22 央加熱器43,如「第4(e)圖」 絕,層22與第〜導線11之表面 對第二絕緣層24進行蝕刻,以 其中接觸窗之底部暴露出第一 示; 接著在第二絕緣層2 4表面 過程中第二熱電材料層會將前 塞以做為第一導線丨丨與後續形 通,沈積完成後並以標準的黃 材料層,以在第二絕緣層24之 「第4(g)圖」所示,其中第一 通而與第二導線1 2接觸形成熱 與另一第二導線(未顯示)接觸 待形成第二導線1 2後,繼 層2 4表面上沉積一第三絕緣層 絕緣層2 6進行蝕刻,以使最後 出,其後沉積第一金屬層,並 義出複數金屬墊37 ;以使與第 信號之—輪出端之用。 接著再沉積一第四絕緣層 金屬墊之上,如「第4 ( j)圖」 於前述第四絕緣層2 8之上,經 修正 定義並蝕刻去除部份第一熱 ,,上形成第一導線1 1及中 第5(e)圖」所示;於第一 儿積弟二絕緣層24,然後, $成複數個接觸窗34、44, 導線1 1,如「第4 ( f )圖」所 二積第一金屬層,在沉積的 4接觸窗34、44填滿形成栓 成之第二導線1 2之連.接導 光製程罩幕定義該第二熱電 表面上形成第二導線1 2,如 導線11能經由接觸窗3 4的連 端Η,並透過另一接觸窗44 形成冷端C。 續在第二導線1 2與第二絕緣 2 6,罩幕定義並對部分第三 一條第二導線之一部份露 飿刻部份該第一金屬層以定 二導線層形成電連結,做為 2 8於第三絕緣層2 6與複數之 所示,並沉積一黑體材料層 由钱刻或L i f t 〇 f f的方法定-^^ 89128366 Description of the invention (7) The sub-layer uses a standard yellow light process to cover the electric material f 'and the central heater 43 in the -insulating layer 22, as shown in "Figure 4 (e)". The second insulating layer 24 is etched on the surfaces of 22 and the first conductive line 11 so that the bottom of the contact window is exposed first; then, during the surface of the second insulating layer 24, the second thermoelectric material layer will plug the front As the first wire, it communicates with the subsequent wires. After the deposition is completed, a standard yellow material layer is used, as shown in the "Figure 4 (g)" of the second insulating layer 24. After the conductive wire 12 contacts to form a heat contact with another second conductive wire (not shown), after the second conductive wire 12 is formed, a third insulating layer and an insulating layer 26 are deposited on the surface of the subsequent layer 24 to perform etching, so that After that, a first metal layer is deposited, and a plurality of metal pads 37 are defined, so as to be used for the first signal-wheel output end. Then deposit a fourth insulating layer on the metal pad, as shown in "Figure 4 (j)" on the aforementioned fourth insulating layer 28, and amend the definition and etch to remove part of the first heat to form the first 5 (e) of lead 11 and middle "; the first insulation layer 24 of the second child, and then, a plurality of contact windows 34, 44 are formed, and lead 11 of lead 11 is shown as" 4 (f) " The second metal layer is accumulated, and the deposited 4 contact windows 34, 44 are filled to form a connection of the second wire 12 formed by the bolt. The light-conducting process mask defines the second wire 1 formed on the second thermoelectric surface 2. For example, the wire 11 can form the cold end C through the contact terminal 34 of the contact window 34 and through the other contact window 44. Continuing on the second wire 12 and the second insulation 26, the mask defines and exposes a part of a part of the third second wire and engraved part of the first metal layer to form an electrical connection with the two wire layers. As 2 8 is shown in the third insulating layer 26 and plural, and a black body material layer is deposited by the method of money engraving or Lift 0ff.

483183 案號 89128366 年 月 曰 修正 五、發明說明(8) 義出黑體吸收層3 9,用以吸收 圖」「第5 ( k )圖」所示。 待形成黑體吸收層3 9之後 體吸收層3 9之表面沉積第五絕 第五絕緣層(2 8,4 0 ),以形成 出金屬墊37;接著以罩幕定義 第五絕緣層4 0表面上挖出蝕刻 貫穿第四 '第三、第二與第一 而使第一犧牲層31之局部表面 之蝕刻製程,如「第5(n)圖」 正面矽體型姓刻併合之蝕刻技 之犧牲層3 1表面進行蝕刻,以 板2 0,而釋放元件結構,如「 所示。 第5 (a )圖〜第5 (〇)圖則顯 件製程驟。 在說明製程步驟之後,現 提供之製程與結構的特點。 就犧牲層與正面石夕體型併 在本發明之較佳實施例中係採 牲層,其與傳統之結構相比較 示。傳統之結構需從石夕基板之 矽基板,此一側向蝕刻因包含 應,其蚀刻速率較慢,且如圖 入射的紅外線,如「第4 ( k) ,繼續在第四絕緣層2 8與黑 緣層4 0,並蝕刻部份第四、 複數之打線窗41,以暴露 钱刻部份第五絕緣層4〇以在 孔13 ’並使此蝕刻孔13往下 絕緣層(2 8,2 6,24,Μ), 能裸露於外,以便進行後續 所示,表後以犧牲層钱刻與 術經由前述钱刻孔j 3對露出 去除犧牲層3 1及部份的碎基 第4(〇)圖」、「第5(〇)圖」 示從另一剖面Β-Β’觀察之元 從幾個方面來說明本發明所 合之蝕刻技術而言: 用多晶矽或非晶矽作為墊犧 ,如第6(a)圖、第6(b)圖所 側向餘刻掏空浮板5 1下面之 各方向晶面之綜合#刻效 所示會在中間形成一金字塔483183 Case No. 89128366 Modification V. Explanation of the invention (8) The black body absorbing layer 39 is used for absorbing diagram "shown in the" 5 (k) diagram ". After the black body absorbing layer 39 is formed, a fifth insulating fifth layer (28,40) is deposited on the surface of the body absorbing layer 39 to form a metal pad 37; then, a surface of the fifth insulating layer 40 is defined by a mask. The etch process that etched through the fourth, third, second and first part of the surface of the first sacrificial layer 31, such as "Figure 5 (n)". The surface of layer 31 is etched to plate 20, and the component structure is released, as shown in ". Figures 5 (a) to 5 (〇) show the manufacturing process steps. After explaining the process steps, now provided Features of manufacturing process and structure. The sacrificial layer and the frontal Shi Xi's body shape are collected in the preferred embodiment of the present invention, which is shown in comparison with the traditional structure. The traditional structure requires the Si Xi substrate's silicon substrate. Due to the side etching, the etching rate is slow, and as the incident infrared rays, such as "4 (k), continue to etch the fourth insulating layer 28 and the black edge layer 40, and etch part of the Fourth, a plurality of wire-windows 41 are used to expose the fifth insulating layer 40 which is engraved on the money so that The insulating layer (28, 26, 24, Μ) under the etched hole 13 can be exposed to the outside for subsequent display. After the table, the sacrificial layer is engraved and operated to remove the sacrifice through the aforementioned engraved hole j 3 to expose. Layer 4 1 and part of the broken base Figure 4 (〇), "Figure 5 (〇)" shows the element viewed from another section BB ′ from several aspects to explain the etching technology combined with the present invention In terms of: Use polycrystalline silicon or amorphous silicon as a pad, as shown in Figure 6 (a) and Figure 6 (b), the side of the floating plate 5 1 in the lateral direction is engraved. The demonstration formed a pyramid in the middle

^183 ^183 五、 形 元 之 此 由 使 構 造 電 知 化 所 加 量 加 在 造 溫 正 埶 Wh 案號89128366 半 月 發明說明~^ ---3^ 件之特性。此j山丘會影響浮板之氣體熱導而終致影響 而若使用本發明所揭露之儀鉍 钱刻技術法,則因犧=正面石夕體型併合 —犧μ @t 刻速率較矽基板快,故 於在鈾幻、六士#甘 基下矽基板之<100>面,而 元件在短時間内蝕刻出平择的π速率較快’故可 。 十一的凹漕而釋放出懸浮浮板結 就電子校正之加熱器結構而言:^ 183 ^ 183 Fifth, the amount of the shape element is added by making the structure known to the electricity. The Wh case No. 89128366 half month Description of the invention ~ ^ --- 3 ^ characteristics. This j hill will affect the gas thermal conductivity of the floating plate and eventually affect it. If the bismuth engraving technique disclosed in the present invention is used, it is because sacrifice = frontal stone eve shape merger-sacrifice μ @t etch rate is higher than the silicon substrate Fast, so on the uranium magic, Liu Shi # Ganji under the silicon substrate of the "100" side, and the element in a short time to etch a flat π rate is faster, so it is OK. Eleven recesses release the floating floating plate junction. As for the structure of the electronically calibrated heater:

習知之熱電堆元件乃直接A 成之浮板的溫升,轉變成收熱輻射,並將所 壓大小氺古你·*+管、4·战.、,、電堆兩鈿的輸出電壓,從其 S大小來直接汁异破測物的輕 之量測方法,常會受環 耵里及/皿度。然而此一習 、或受讀取電路特變熱電堆材料之經久老 提出之熱電堆感測器,可在;二:產生漂移。而本專利 熱器’如此即可使用後述之;:予板上加-電阻線做為 ,以避免以上所述之輪出^板正測量法來進行測 電子校正法量測之;:::所造成之誤差。 熱器使用,測量時先遮蔽日:板上佈上-電阻線做為 此電阻線上通電以供給射至感測元件的輻射,然後 成之溫升。其中由於二二二2熱浮板,來模擬熱輻射所 升,及由輻射所提供的所提供的功率和其所造成的 比關係。所以只要在測1;、和其所造成的溫升,均成一 電堆元件所吸收之熱輻二被測物體的溫度之前,先遮蔽 ,而量其所造成的熱'電雄鈐f在加熱器上施加一功率 ___ 叛出電壓Vh。然後移開遮蔽,The conventional thermopile element is the temperature rise of the floating plate directly converted into A, which is converted into heat radiation, and the size of the compressed voltage is the same as that of the output voltage of the ** tube, 4 *, and the stack. The light measurement method that directly measures the test object from its S size is often affected by the temperature and the degree. However, this practice, or the long-standing thermopile sensor proposed by the thermoelectric stack material of the reading circuit, can be found in the second: drift. This patented heater can be used as described below; add a resistance line to the board as a way to avoid the above-mentioned method of measuring the plate with the positive measurement method to measure the electronic correction method ::: The error caused. The heater is used, and the day is first shielded when measuring: the resistance line on the board is used as the resistance line to energize the radiation to the sensing element, and then the temperature rises. Among them, the 2222 thermal floating plate is used to simulate the rise in thermal radiation, and the ratio between the power provided by the radiation and the resulting power. Therefore, as long as the temperature of 1 and the temperature rise caused by it are equal to the heat radiation absorbed by a stack element and the temperature of the object to be measured, they are shielded, and the heat caused by the electricity is heated. A power is applied to the device ___ rebel voltage Vh. Then remove the cover,

483183 _案號 89128366_年月日__ 五、發明說明(10) 由浮板吸收被測物輻射至浮板的功率W t,並量取其所造成 的熱電堆輸出V t。如此,由測量所得的W h、V h、V t,即可 計算出被測物所發出的絕對輻射量W t,並可計算出被測物 體之溫度,其公式可表示如下: 由光加熱與電加熱之對等性 在此k為一比例常數,可事先由一黑體及巳知之溫度 而精確量得。 由於熱電堆元件之輸出效益隨環境、時間或輸出電路 影響所造成之漂移等,皆會依同一比例影響Vh及Vt,所以 Vh/V t不會隨之漂移,而可測量到精確之標的物的輻射量 及溫度。 ' 而此一加熱器之製作,通常使用第一熱電材料層或第 二熱電材料層之材料做為加熱器之電阻,但也由於加熱器 與熱電堆材料使用相同層之材料’故浮板上之加熱將阻 擂熱端之深入浮板,而實際上在熱電堆之設計中,其熱端 越深入浮板,其輸出,響應度及靈敏度都將增大(參考資 料1 )。故在元件設計中熱端越深入設計應為較佳之設計。 而本發明所揭露之輻射型加熱器,其不僅能使各熱電偶之 熱端深入浮板中央,且可使使用加熱器之加熱時之各熱電 偶之熱端皆相鄰於加熱器,以增加其熱傳輸效率。 以„下就本專利之特點整理如下: (1)就犧牲層與正面矽體型併合之蝕刻技術言: 使用犧牲層蝕刻與矽體型蝕刻併合之蝕刻方式,可以 加速蝕刻速度,縮短蝕刻時間,提高良率。並能提高蝕刻483183 _ Case No. 89128366_year month__ V. Description of the invention (10) The floating plate absorbs the power W t radiated from the measured object to the floating plate, and measures the thermopile output V t caused by it. In this way, from the measured W h, V h, and V t, the absolute radiation amount W t emitted by the measured object can be calculated, and the temperature of the measured object can be calculated. The formula can be expressed as follows: Heating by light The equivalence with electric heating, where k is a proportional constant, can be accurately measured in advance from a black body and a known temperature. Because the output benefits of thermopile components are affected by the environment, time, or output circuit, the drift will affect Vh and Vt in the same proportion, so Vh / V t will not drift with it, and an accurate target can be measured. Radiation and temperature. 'And the manufacture of this heater usually uses the material of the first thermoelectric material layer or the second thermoelectric material layer as the resistance of the heater, but it is also because the heater and the thermopile material use the same layer of material. The heating will prevent the hot end from going deep into the floating plate. In fact, in the design of the thermopile, the hotter the deeper the floating end is, the output, responsiveness and sensitivity will increase (Reference 1). Therefore, the deeper the hot end design in the component design should be the better design. The radiant heater disclosed in the present invention can not only make the hot end of each thermocouple go deep into the center of the floating plate, but also make the hot end of each thermocouple adjacent to the heater when the heater is used for heating. Increase its heat transfer efficiency. The features of this patent are summarized as follows: (1) Etching technology combining the sacrificial layer and the front silicon type: Using the etching method combining the sacrificial layer etching and the silicon type etching can accelerate the etching speed, shorten the etching time, and improve Yield. And can improve etching

483183 _案號 89128366_年月日__ 五、發明說明(11) 底部之平坦度,提高元件之特性及其均一性。 (2 )就電子校正之加熱器結構而言: 本發明係以輻射型加熱器做為電子校正之加熱器,其 設計不僅可使熱電偶之各熱端深入浮板内部,且可使其熱 端相鄰接於加熱器,同時提高輻射吸收及電阻加熱器之熱 傳輸效率。483183 _Case No. 89128366_ 年月 日 __ 5. Description of the invention (11) The flatness of the bottom improves the characteristics and uniformity of the component. (2) As far as the structure of the electronically calibrated heater is concerned, the present invention uses a radiant heater as the electronically calibrated heater. Its design not only allows each hot end of the thermocouple to penetrate into the interior of the floating plate, but also allows it to heat. The terminals are adjacent to the heater, and at the same time, the heat absorption efficiency of the radiation absorption and the resistance heater is improved.

第14頁 483183 案號 89128366 年 月 修正 圖式簡單說明 第1圖係為本發明之熱電堆感測元件的上視圖; 第2圖係為本發明之熱電堆感測元件之延第1圖A-A’切 面之剖面圖; 第3圖係為本發明之熱電堆感測元件之延第1圖B-B’切 面之剖面圖; 第4 ( a)〜4 (〇)圖係為本發明所揭露之熱電堆感測元件 製造方法之延第1圖A - A ’切面的剖面圖; 第5 ( a)〜5 (〇)圖係為本發明所揭露之熱電堆感測元件 製造方法之延第1圖B-B’切面的剖面圖; 第6 ( a)圖係為傳統熱電堆結構之蝕刻進行狀況之示意 圖; 第6 ( b)圖係為本發明之使用犧牲層與矽體型蝕刻併合 製程之熱電堆結構之蝕刻進行狀況之示意圖。 <圖式中元件名稱與符號對照>Page 14 483183 Case No. 89128366 Revised diagrams Brief description The first figure is a top view of the thermopile sensing element of the present invention; the second figure is the extension of the thermopile sensing element of the present invention. Figure 1A -A 'cross-sectional view; Figure 3 is the extension of the thermopile sensing element of the present invention; Figure 1 is a cross-sectional view of B-B' cut; Figures 4 (a) ~ 4 (〇) are the present invention The extension of the disclosed method for manufacturing a thermopile sensing element is shown in Figs. 1A-A '; Figs. 5 (a) to 5 (〇) are drawings of the method for manufacturing a thermopile sensing element disclosed in the present invention. A cross-sectional view along the B-B 'cut plane of Fig. 1; Fig. 6 (a) is a schematic view of the etching progress of a conventional thermopile structure; and Fig. 6 (b) is a sacrificial layer and a silicon-type etching according to the present invention. Schematic diagram of the progress of etching of the thermopile structure of the combined process. < Comparison of component names and symbols in the drawings >

C : 冷端 Η : 熱端 11 第一 導 線 12 第二 導 線 13 钱刻 孔 14 愛體 M、、 rliL· 吸 收 層 15 第一 打 線 窗 16 第三 打 線 窗 17 第四 打 線 窗 第15頁 483183 年_月 曰 修正 圖式簡單說明 案號 89128366 18 第 二 打 線 窗 19 加 敎 器 20 矽 基 板 21 第 一 犧 牲 層材料 22 第 一 絕 緣 層 24 第 二 絕 緣 層 26 第 二 絕 緣 層 28 第 四 絕 緣 層 31 第 一 犧 牲 層 34 埶 端 接 觸 窗 37 金 屬 墊 39 g 體 吸 收 層 40 第 五 絕 緣 層 41 打 線 窗 43 中 央 加 熱 器 44 冷 端 接 觸 窗 51 浮 板 52 犧 牲 層C: Cold junction: Hot junction 11 First wire 12 Second wire 13 Money cut hole 14 Love body M ,, rliL · Absorptive layer 15 First wire window 16 Third wire window 17 Fourth wire window Page 15 483183 _Yueyue Modified Illustration Brief Description Case No. 89128366 18 Second Wire Window 19 Amplifier 20 Silicon Substrate 21 First Sacrificial Layer Material 22 First Insulation Layer 24 Second Insulation Layer 26 Second Insulation Layer 28 Fourth Insulation Layer 31 The first sacrificial layer 34 The contact window at the end 37 Metal pad 39 g Body absorbing layer 40 The fifth insulation layer 41 Wired window 43 Central heater 44 Cold end contact window 51 Floating plate 52 Sacrificial layer

第16頁Page 16

Claims (1)

483183 案號 89128366 年月曰 修正 六 步 層 線 面 第 觸 面 條 屬 成 申請專利範圍 1. 一種熱電堆感測元件之製造方法,其至少包括下列 驟: 提供一矽基板; 沉積一第一犧牲層材料於該矽基板表面; 罩幕定義並蝕刻去除部份該材料層以形成一第一犧牲 y 沉積一第一絕緣層於該犧牲層與矽基板表面; 沉積一熱電材料層於該第一絕緣層表面; 罩幕定義並蝕刻去除部份該材料層以形成一第一導 沉積一第二絕緣層於該第一導線與該第一絕緣層之表 去除部份該第二絕緣層,以形成複數個接觸窗; 沉積一第二熱電材料層於該第二絕緣層之表面; 罩幕定義並蝕刻去除部份該第二熱電材料層以形成一 二導線,並透過該接觸窗使該第二導線與該第一導線接 於複數個熱端及冷端; 沉積一第三絕緣層於該第二導線與該第二絕緣層之表 蝕刻部份該第三絕緣層與該第二絕緣層,以使最後一 該第二導線之一部份裸露於外,用以連接至待形成之金 墊,而第一條該第一導線亦經由該第二導線連接至待形 之一另一金屬墊; 沉積一第一金屬層於該第三絕緣層之上;483183 Case No. 89128366 Modified six-step layer line surface contact surface noodle belongs to patent application scope 1. A method for manufacturing a thermopile sensing element, which includes at least the following steps: providing a silicon substrate; depositing a first sacrificial layer Material on the surface of the silicon substrate; the mask defines and etches away a portion of the material layer to form a first sacrificial y; deposits a first insulating layer on the surface of the sacrificial layer and the silicon substrate; deposits a layer of thermoelectric material on the first insulation Layer surface; the mask defines and etches away part of the material layer to form a first conductor and deposits a second insulating layer on the surface of the first wire and the first insulating layer to remove part of the second insulating layer to form A plurality of contact windows; depositing a second thermoelectric material layer on the surface of the second insulating layer; a mask defining and etching to remove a portion of the second thermoelectric material layer to form a two-wire, and passing the contact window to make the second The conductive line and the first conductive line are connected to a plurality of hot ends and cold ends; a third insulating layer is deposited on the surface of the second conductive line and the second insulating layer, and the third insulating layer and the A second insulation layer, so that a part of the last second wire is exposed to connect to the gold pad to be formed, and the first first wire is also connected to the to-be-shaped via the second wire A second metal pad; depositing a first metal layer on the third insulating layer; 第17頁 483183 案號 89128366 曰 修正 六、申請專利範圍 蝕 沉 沉 (Lift 外線; 沉 表面; 出複數 形 絕緣層 以 刻子L對 2. 刻部份該第一金屬層以形成複數之金屬塾; 積一第四絕緣層於該第三絕緣層與金屬墊之上; 積一黑體層於該第四絕緣層之上,並以蝕刻或舉離 〇 f f )的方法定義出黑體吸收層,用以吸收入射的紅 積一第五絕緣層於該第四絕緣層與該黑體吸收層之 刻部份 之金屬 成一触 ,而使 犧牲層 該矽基 如申請 造方法,其中 3. —種熱 一 ί夕基板 一形成在 一沈積於 一形成在 一沈積於 複數個形 一形成於 數個冷端及熱 該第四、第五絕緣層,形成一打線窗,以露 墊; 刻孔貫穿該第五、第四、第三、第二與第一 第一犧牲層之表面裸露於外;以及 蝕刻與正面蝕刻技術併合之方法,經由該蝕 板進行蝕刻,以掏空部分該矽基板。 專利範圍第1項所述之熱電堆感測元件之製 犧牲層之材料可為多晶發或非晶碎等材料。 電堆感測元件,包括: 矽基板表面之第一犧牲層; 矽基板與第一犧牲層表面之第絕緣層; 第一絕緣層上之第一導線; 第一導線與第一絕緣層表面之第二絕緣層; 成於第二絕緣層上之接觸窗; 第二絕緣層上,且與所述第一導線接觸於複 端之第二導線;Page 17 483183 Case No. 89128366 Amendment VI. Patent application scope Erosion and sinking (Lift outer wire; sinking surface; a plurality of insulating layers are formed with a scribe L to 2. Engraving part of the first metal layer to form a plurality of metal cymbals; A fourth insulating layer is stacked on the third insulating layer and the metal pad; a black body layer is stacked on the fourth insulating layer, and a black body absorbing layer is defined by etching or lifting away from the substrate, and is used for Absorb incident red product a fifth insulating layer in the fourth insulating layer and the black body absorbing part of the metal of the engraved part of a contact, and make the sacrificial layer of the silicon-based as in the manufacturing method, in which 3. — 种 热 一 ί In the evening, a substrate is formed, a deposit is formed, a deposit is formed in a plurality of shapes, a plurality of cold ends are formed, and the fourth and fifth insulating layers are heated to form a wire window to expose the pad; a notch hole runs through the fifth The surfaces of the fourth, third, second, and first sacrificial layers are exposed to the outside; and a method of combining etching and frontal etching techniques, etching is performed through the etching plate to hollow out a part of the silicon substrate. The material of the thermopile sensing element described in the first item of the patent scope The material of the sacrificial layer may be polycrystalline or amorphous. The stack sensor includes: a first sacrificial layer on the surface of the silicon substrate; a second insulating layer on the surface of the silicon substrate and the first sacrificial layer; a first wire on the first insulating layer; a first wire on the surface of the first insulating layer A second insulating layer; a contact window formed on the second insulating layer; a second conductive line on the second insulating layer and in contact with the first conductive line on the multiple end; 第18頁 483183 _案號89128366_年月曰 修正_ 六、申請專利範圍 一沈積於第二導線與第二絕緣層表面之第三絕緣層; 形成於第三絕緣層上的多數金屬墊;所述最後一條第 二導線與所述第一條第一導線係直接或間接與金屬墊相 連; 一沈積於第三絕緣層與金屬墊上的第四絕緣層; 一形成於第四絕緣層上之黑體吸收層; 一沈積於第四絕緣層與黑體吸收層上之第五絕緣層; 形成於第四、五絕緣層’以露出複數金屬墊之打線 窗;以及貫穿第五、第四、第三、第二與第一絕緣層而使 第一犧牲層表面露出之钱刻孔。 4. 如申請專利範圍第3項之熱電堆感測元件^其中可 於中央浮板上製作一電阻線加熱器,藉由外界輸入電功 率,而做為電子校正測量之用。 5. 如申請專利範圍第3項之熱電堆感測元件,其中電 阻線加熱器成輻射狀。 6. 如申請專利範圍第3項之熱電堆感測元件,其中所 述矽基板對著所述貫穿第五、第四、第三、第二與第一絕 緣層之蝕刻孔之處乃呈部份被掏空之狀態。Page 18 483183 _Case No. 89128366_ Years and months Amendment_ Sixth, the scope of the application for patents-a third insulation layer deposited on the surface of the second wire and the second insulation layer; most metal pads formed on the third insulation layer; The last second wire and the first first wire are directly or indirectly connected to the metal pad; a fourth insulating layer deposited on the third insulating layer and the metal pad; a black body formed on the fourth insulating layer Absorbing layer; a fifth insulating layer deposited on the fourth insulating layer and the blackbody absorbing layer; a wiring window formed on the fourth and fifth insulating layers to expose a plurality of metal pads; and penetrating through the fifth, fourth, third, The second and first insulating layers make a hole for exposing the surface of the first sacrificial layer. 4. For the thermopile sensing element in item 3 of the patent application, a resistance wire heater can be made on the central floating plate, and the external power input is used for electronic calibration measurement. 5. The thermopile sensing element as described in the patent application No. 3, wherein the resistance wire heater is radiated. 6. The thermopile sensing element according to item 3 of the patent application scope, wherein the silicon substrate faces the etching holes penetrating through the fifth, fourth, third, second and first insulating layers. The state of being hollowed out. 第19頁Page 19
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