TW483139B - Multilayer lead frame and semiconductor device using same - Google Patents
Multilayer lead frame and semiconductor device using same Download PDFInfo
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- TW483139B TW483139B TW090109266A TW90109266A TW483139B TW 483139 B TW483139 B TW 483139B TW 090109266 A TW090109266 A TW 090109266A TW 90109266 A TW90109266 A TW 90109266A TW 483139 B TW483139 B TW 483139B
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- lead frame
- semiconductor device
- heat spreader
- semiconductor element
- lead
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
483139 A7 B7 經濟部智慧財產局員工消費合作社印製 而 五、發明說明（1 ) <技術領域> 本發明係關於引線框（Lead frame)及使用該引線框之 半導體裝置，更詳細的是關於具有熱擴散器（heat spreader) 之引線框及使用該引線框之半導體裝置。 <背景技術〉 習知，金屬線焊接（wire bonding)LSI等之半導體與引 線框，將此等封入樹脂形成半導體裝置廣為被使用。第18 圖所示係關於該習知例之半導體裝置及使用於此等之引線 框之截面圖。 關於第1 8圖所示習知例之半導體裝置1 〇 1，其熱擴散器 1〇3與引線1〇2，係使用介由兩面黏著膠帶ι〇7積層而成之2 層的多層引線框108。而且，在熱擴散器1〇3之上，半導體 凡件104藉刻度黏著膏（die attach paste)等之黏著劑（未圖示） 被黏著。 另外，該半導體元件104之電極電子（未圖示）之各項， 係藉金線105、105......被金屬線焊接於内引線i〇2a、 1〇2a……之各項的末端部。該等半導體元件104、金線105、 1〇5.......及内引線l〇2a、102a……之各項，係藉模樹脂被 樹脂密封，防止該等接觸於外氣。 另外，如圖所示，熱擴散器103之半導體元件搭載面係 指其相反側之面，未被樹脂密封就露出於外部。如此使其 露出於外部，可以提高在半導體元件1〇4所發生的熱之放熱 效果0 且，持續内引線102a之外引線1021)，係被彎曲成l ‘紙張尺度適用中國國家標準（CNS)A4規格⑵G χ 29 (請先閱讀背面之注意事項再填寫本頁) .¾^--------訂---------AW1 · 4 483139 五 經濟部智慧財產局員工消費合作社印製 A7 B7 發明說明（2) 字狀’形成銲劑部102c與立起部102d。此些之中，銲劑部 102c ’係主印刷電路板等之安裝基板1 〇9與進行銲劑之部 为’藉此’半導體裝置101與安裝基板1〇9被電氣的且機械 的接續。 關於該習知例之多層引線框108，係藉如第19圖及第20 圖所示之製造過程被製造。第第19圖及第第2圖〇為針對關 於習知例之多層引線框1 〇8之製造過程所示之平面圖。 在製造多層引線框108，首先如第第19圖所示，準備形 成引線102、102......之引線框11〇。在該引線框110，由於 對應4個之半導體裝置101(參照第第18圖）形引線1〇2、 102......，所以該引線框110稱作4連之引線框。 另外，隨著此等，分別準備各4個之兩面黏著膠帶1〇7、 107……與熱擴散器103、103……。如第第19圖所示，該熱 擴散器103、103......，係對應4個之半導體裝置1 〇 1之各個 個別的被準備。 而且，如此準備之後，藉兩面黏著膠帶1〇7、1〇7……， 將熱擴散器103、103......1個1個的黏著於引線框11 〇。藉 此’完成如第第20圖所示之4連多層引線框lU。如圖所示， 在該4連多層引線框hi形成4個多層之引線框1〇8、 108...... 〇 在此再次參照第第18圖，第第18圖所示多層引線框1〇8 中’引線102，係沖壓加工銅條（copper strip)所形成，其厚 度約為0.15mm。另一方面，熱擴散器1〇3 ,係如第第19圖 所示與引線102不同被製作而成，其厚度與外引線102b之立 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------裝--------訂--------•線 (請先閱讀背面之注意事項再填寫本頁) 483139 A7 B7 五、發明說明（ 起部102d之長度約略相同。具體而言，其厚度約為2mm程 度。 但是，使用如此厚度之熱擴散器103後，由於多層引線 框108之重量變重，所以半導體裝置1〇1全體之重量也變 重。此事變成妨害了半導體裝置101之輕量化。 更進一步，在製造該多層引線框108之際，如第19圖所 示’熱擴散器103、103......1個1個的被黏著於引線框11 〇。 但是，如此1個1個的黏著熱擴散器103、1〇3......，則 多層引線框108之製造時間變長，該多層引線框1〇8之製造 成本最後變高。如此，將會引起使用多層引線框1〇8之半導 體裝置101之製造成本上升。 〈發明的開示〉 本發明係提供一種具有熱擴散器，同時比習知還輕量 化，且可以比習知更縮短製造時間之引線框及使用該引線 框之半導體裝置為目的。 為了達成上述之目的，若依據本發明可以提供一種多 層引線框，其中在積層熱擴散器與内引線所成多層引線框 中，在面向前述内引線末端之中途部，設置彎曲部用以對 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 (請先閱讀背面之注意事項再填寫本頁) 刖述熱擴散器之半導體元件搭載面向上下方向彎曲，並將 該内引線黏著於前述熱擴散器之半導體元件搭載面之周緣 部。 、 更進一步，若依據本發明可以提供一種半導體裝置， 其中在如申請專利範圍第1項之多層引線框搭載半導體元 件，iw著電氣的接續前述半導體元件與前述内引、線，前述483139 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (1) < Technical Field > The present invention relates to a lead frame and a semiconductor device using the lead frame. The present invention relates to a lead frame having a heat spreader and a semiconductor device using the lead frame. < Background Art > Conventionally, semiconductors and lead frames such as wire bonding LSIs, etc., are widely used to form semiconductor devices that are encapsulated in resin. Fig. 18 is a cross-sectional view of the conventional semiconductor device and the lead frame used in the conventional example. Regarding the conventional semiconductor device 1101 shown in FIG. 18, the heat spreader 103 and the lead 102 are two-layer multilayer lead frames that are laminated by using two-sided adhesive tape 107. 108. Furthermore, on the heat spreader 103, the semiconductor element 104 is adhered by an adhesive (not shown) such as a die attach paste. In addition, the items of the electrode electrons (not shown) of the semiconductor element 104 are the items of gold wires 105, 105 ... welded to the inner leads i02a, 102a, etc. by metal wires. Of the end. Each of these semiconductor elements 104, gold wires 105, 105, ..., and inner leads 102a, 102a, ... is sealed with a resin by a mold resin to prevent such contact from outside air. As shown in the figure, the semiconductor element mounting surface of the heat spreader 103 refers to the surface on the opposite side, and is exposed to the outside without being sealed by a resin. By exposing it to the outside in this way, the heat radiation effect of the heat generated in the semiconductor device 104 can be improved. Moreover, the inner leads 102a and the outer leads 1021) are continuously bent to a size of 1 'paper. The Chinese National Standard (CNS) A4 Specification ⑵G χ 29 (Please read the precautions on the back before filling out this page). ¾ ^ -------- Order --------- AW1 · 4 483139 Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative A7 B7 Description of the Invention (2) The letter “forms the solder portion 102c and the rising portion 102d”. Among these, the soldering portion 102c 'is a mounting substrate 109 of a main printed circuit board and the like, and the soldering portion is "by this" the semiconductor device 101 and the mounting substrate 109 are electrically and mechanically connected. The multilayer lead frame 108 of this conventional example is manufactured by the manufacturing process shown in FIGS. 19 and 20. 19 and 2 are plan views showing a manufacturing process of a multilayer lead frame 108 according to a conventional example. In manufacturing the multilayer lead frame 108, first, as shown in Fig. 19, a lead frame 110 is prepared to form the leads 102, 102, .... This lead frame 110 corresponds to four semiconductor devices 101 (refer to FIG. 18) shaped leads 102, 102,... So the lead frame 110 is referred to as a 4-connected lead frame. In addition, along with this, four two-sided adhesive tapes 107, 107, ... and heat spreaders 103, 103, etc. were prepared separately. As shown in Fig. 19, the heat spreaders 103, 103, ... are prepared for each of the four semiconductor devices 101. After preparing in this manner, the heat spreaders 103, 103, and the like are adhered to the lead frame 11 one by one using the double-sided adhesive tapes 107 and 107. Thereby, the four-layer multilayer lead frame 1U shown in FIG. 20 is completed. As shown in the figure, four multilayer lead frames 108, 108, ... are formed on the 4-layer multilayer lead frame hi. Referring to FIG. 18 again, the multilayer lead frame shown in FIG. The lead 102 in 108 is formed by stamping a copper strip and has a thickness of about 0.15 mm. On the other hand, the heat spreader 103 is made different from the lead 102 as shown in FIG. 19, and its thickness and the paper size of the outer lead 102b are in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------- Installation -------- Order -------- • Line (Please read the precautions on the back before filling this page ) 483139 A7 B7 V. Description of the invention (The length of the starting portion 102d is approximately the same. Specifically, its thickness is about 2mm. However, after using such a thickness of the heat spreader 103, the weight of the multilayer lead frame 108 becomes heavy, Therefore, the overall weight of the semiconductor device 101 is also increased. This has hindered the weight reduction of the semiconductor device 101. Furthermore, when manufacturing the multilayer lead frame 108, as shown in FIG. 19, the 'heat spreader 103, 103 ...... one by one is adhered to the lead frame 11 〇. However, if one by one heat spreader 103, one 103 ... The manufacturing time becomes longer, and the manufacturing cost of the multilayer lead frame 108 finally becomes higher. In this way, the manufacturing of the semiconductor device 101 using the multilayer lead frame 108 <Invention of the invention> The present invention aims to provide a lead frame having a heat spreader, which is lighter than the conventional one, and which can shorten the manufacturing time than the conventional one, and a semiconductor device using the lead frame. To achieve the above object, according to the present invention, a multilayer lead frame can be provided. In the multilayer lead frame formed by laminating a heat spreader and an inner lead, a bent portion is provided in the middle portion facing the end of the inner lead. Printed by the Intellectual Property Bureau's Consumer Cooperative (please read the precautions on the back before filling this page) Describe the semiconductor element mounting of the heat spreader that bends upward and downward, and attach the inner lead to the semiconductor element mounting of the aforementioned heat spreader The peripheral portion of the surface. Further, if a semiconductor device is provided according to the present invention, a semiconductor element is mounted on a multilayer lead frame such as the first item of the scope of patent application, and iw is electrically connected to the aforementioned semiconductor element and the aforementioned inner leads and wires. , Previously
6 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（4 内引線、前述半導體元件、及前述熱擴散器分別被樹脂密 封，使前述熱擴散器之前述半導體元件搭載面之相反面露 出。 更進一步提供一種半導體裝置，其中在前述半導體裝 置之安裝面周緣部，前述内引線之表面之一部露出，且該 路出之表面形成前述半導體裝置之外部接續端子，而前述 多層引線框之外引線不由前述半導體裝置之外周突出。 若依據關於本發明之引線框，該引線框係積層熱擴散 器與内引線所形成之多層引線框。而且，在該内引線，在 面向其末端之中途部，設置對於熱擴散器之半導體元件搭 載面彎曲於上下方向之彎曲部，該内引線之末端部被黏著 於熱擴散器之半導體元件搭載面之周緣部。 藉設置如此之彎曲部於内引線，由於僅該彎曲部之弯 曲深度之部分之熱擴散器之厚度變薄，所以熱擴散器之重 量被輕量化。藉此，關於本發明之引線框極具有該等之半 導體裝置之重量被輕量化。 更進一步，由於熱擴散器之厚度變薄，所以藉沖壓加 工銅條等金屬，變成可以製作該熱擴散器。若依據該沖壓 加工，多數之熱擴散器被形成於上述之金屬條。而且，藉 積層形成該多數熱擴散器之金屬條，與形成内引線之金屬 條’在形成内引線之金屬條同時積層多數之熱擴散器。為 此，在關於本發明之引線框，其製造時間可以比習知更被 縮短。 另外，若依據關於本發明之半導體裝置，在上述之多 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） ^--------^-------- (請先閱讀背面之注意事項再填寫本頁)6 A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (4 The inner lead, the aforementioned semiconductor element, and the aforementioned heat spreader are respectively sealed with resin, so that the opposite side of the aforementioned semiconductor element mounting surface of the aforementioned heat spreader is exposed. A semiconductor device is further provided, in which a portion of a surface of the inner lead is exposed at a peripheral edge portion of the mounting surface of the semiconductor device, and the exited surface forms an external connection terminal of the semiconductor device, and the multilayer lead frame The outer lead does not protrude from the outer periphery of the aforementioned semiconductor device. According to the lead frame of the present invention, the lead frame is a multilayer lead frame formed by laminating a heat spreader and an inner lead. Further, the inner lead is halfway toward the end. The semiconductor device mounting surface of the heat spreader is provided with a bent portion bent in the up-down direction, and the end portion of the inner lead is adhered to the peripheral portion of the semiconductor element mounting surface of the heat spreader. Because the thickness of the heat spreader is only the part of the bending depth of the bending part It is thinner, so the weight of the heat spreader is reduced. As a result, the weight of the semiconductor device having the lead frame electrode according to the present invention is reduced. Furthermore, since the thickness of the heat spreader is reduced, it is reduced by punching. Processing of metal such as copper bars makes it possible to make the heat spreader. According to the stamping process, most of the heat spreaders are formed in the above-mentioned metal bars. Furthermore, the metal bars of the majority heat spreaders are formed by lamination and formed in The metal strip of the lead is formed by forming a plurality of metal strips of the inner lead at the same time. For this reason, the manufacturing time of the lead frame of the present invention can be shortened more than conventionally. For semiconductor devices, the Chinese paper standard (CNS) A4 (210 X 297 public love) is applicable to many of the above paper sizes. ^ -------- ^ -------- (Please read the (Please fill in this page again)
483139 五、發明說明（5 ) 層引線框搭在半導體元件，該半導體元件與内引線被電氣 的接續。而且，使熱擴散器之半導體元件搭載面之相反面 露出’内引線、半導體元件、及熱擴散器之各項分別被樹 脂密封。更進-步’在該半導體裝置中，内引線之表面的 邛路出於其女裝面周緣部，如此露出之表面變成該半導 體裝置之外部接續端子。而且，外引線不由該半導體裝置 之外周突出。 若依據此等，外引線與由外周突出之半導體裝置相 比，由於其安裝面積變小，所以關於本發明之半導體裝置， 係以高密度被安裝於安裝基板。 〈圖面的簡單說明〉 第1圖為針對本申請案發明者所提出之問題點，為了說 明之比較例之半導體裝置之截面圖。 第2圖為關於本發明之1實施型態，針對引線框及使用 該引線框之半導體裝置所示之平面圖。 第3圖為第2圖之A-B截面圖。 第4圖為關於本發明之其他實施型態，針對引線框及使 用5亥引線框之半導體裝置所示之截面圖。 第5圖為關於本發明之另丨實施型態，針對引線框及使 用該引線框之半導體裝置所示之截面圖。 第6圖為關於本發明之更另1實施型態，針對引線框及 使用該引線框之半導體裝置所示之截面圖。 第7圖〜第13圖為關於第3圖所示本發明之1實施型 態’順序的表示引線框及使用該引線框之半導體裝置之製 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 丨 ^ 裝--------訂---------AW. (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 483139 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（6 ) 造方法各過程之截面圖。 第14圖為針對比較例之引線框及使用該引線框之半導 體裝置所示之平面圖。 第15圖為第14圖之A〜B截面圖。 第16圖為針對其他之比較例之引線框及使用該引線框 之半導體裝置所示之截面圖。 第17圖為針對再1個比較例之引線框及使用該引線框 之半導體裝置所示之平面圖。 第18圖為關於習知例針對引線框及使用該引線框之半 導體裝置所示之截面圖。 第19圖及第20圖為關於習知例針對引線框之製造過程 所不之平面圖。 <實施發明的最佳型態> 針對達到發明之經緯加以說明 本申請案發明者，鑒於上述習知例之問題點，首先考 慮到在第1(a)及1(b)圖其截面所示之引線框及使用該引線 框之半導體裝置。 第1(a)圖所示之半導體裝置2(H，其頂料板（die483139 V. Description of the invention (5) The layer lead frame is connected to the semiconductor element, and the semiconductor element and the inner lead are electrically connected. In addition, the opposite side of the semiconductor element mounting surface of the heat spreader is exposed, and each of the inner lead, the semiconductor element, and the heat spreader is sealed with a resin. Going one step further: In this semiconductor device, the surface of the inner lead is formed on the periphery of the women's clothing surface, and the exposed surface becomes the external connection terminal of the semiconductor device. Moreover, the outer leads do not protrude from the outer periphery of the semiconductor device. According to this, the outer lead has a smaller mounting area than a semiconductor device protruding from the periphery, so that the semiconductor device of the present invention is mounted on a mounting substrate at a high density. <Brief Description of Drawings> Fig. 1 is a cross-sectional view of a semiconductor device of a comparative example for explaining the problems raised by the inventors of the present application. Fig. 2 is a plan view showing a lead frame and a semiconductor device using the lead frame in accordance with one embodiment of the present invention. Fig. 3 is a sectional view taken along the line A-B in Fig. 2. Fig. 4 is a cross-sectional view showing a lead frame and a semiconductor device using a lead frame according to another embodiment of the present invention. Fig. 5 is a sectional view showing a lead frame and a semiconductor device using the lead frame according to another embodiment of the present invention. Fig. 6 is a cross-sectional view showing a lead frame and a semiconductor device using the lead frame according to still another embodiment of the present invention. FIGS. 7 to 13 show the order of the lead frame and the semiconductor device using the lead frame in accordance with the first embodiment of the present invention shown in FIG. 3. The paper dimensions are in accordance with the Chinese National Standard (CNS) A4 specification (210 x 297 mm) 丨 ^ Packing -------- Order --------- AW. (Please read the notes on the back before filling this page) 483139 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (6) Cross-sectional views of each process of the manufacturing method. Fig. 14 is a plan view showing a lead frame of a comparative example and a semiconductor device using the lead frame. Fig. 15 is a sectional view taken along the line A-B of Fig. 14; Fig. 16 is a sectional view showing a lead frame of another comparative example and a semiconductor device using the lead frame. Fig. 17 is a plan view showing a lead frame of another comparative example and a semiconductor device using the lead frame. Fig. 18 is a sectional view showing a conventional example with respect to a lead frame and a semiconductor device using the lead frame. Figures 19 and 20 are plan views of conventional examples for the manufacturing process of lead frames. < The best mode for implementing the invention > The inventor of the present application will be described with respect to the longitude and latitude of the invention. In view of the problems of the above-mentioned conventional examples, first consider the cross-sections in Figures 1 (a) and 1 (b). The lead frame shown and the semiconductor device using the lead frame. The semiconductor device 2 (H, shown in FIG. 1 (a),
Pad)202f、内引線2〇2a、202a......及外引線202b、202b...... 之各項，係使用沖壓加工單一之銅條所形成之所謂單層引 線框。 在此，在單層引線框中之頂料板，係相當於在多層引 線框中之熱擴散器，與熱擴散器同樣具有搭載半導體元件 之機能。 — — — — — — · I-----I ^ ·1111111« (請先閱讀背面之注意事項再填寫本頁) 家標準(cG S)A4規格（2〗〇 X 297公釐 483139 A7 工 五、發明說明（ 該頂料板202f，在沖壓加工之際被面向下方彎曲加 藉支撐墊（support bar)被支撐於引線框2〇2之周緣部。 另外，在頂料板202f上，藉刻度黏著膏等之黏著劑（未 圖示）黏著半導體體裝置203。半導體裝置203之電極端子 (未圖示）與内引線202a、202a……，係藉金線204、204·····. 被金屬線焊接。而且，頂料板2〇2f之半導體元件搭載面、 半導體元件203、金線204、204.......及内引線202a、 202a......之各項，係藉模樹脂205被樹脂密封。 尚且，持續内引線202a在外引線202b，形成鐸劑部2〇2e 與立起部202d ,但由於此等與關於在習知例之半導體裝置 中者相同，所以省略其說明。 一方面，如第1(b)圖所示之半導體裝置3(H，係使用其 引線302、……與熱擴散器303，介由兩面黏著膠帶3〇7 所積層之2層引線框308。其中，引線302及熱擴散器3〇3， 係分別沖壓加工別的銅條所形成者。特別是，熱擴散器 3〇3,係藉沖壓加工由凹部所形成的銅條所形成者。在該凹 部之底部，藉刻度黏著膏等之黏著劑（未圖示）黏著 裝置304。 半導體裝置304之各個電極電子（未圖示）與内引線 3〇2a、302aa……之各項，係藉金線305、305……被金屬 線焊接。而且，而且，熱擴散器3〇3之半導體元件搭載面、 半導體元件304、金線305、305 .......及内引線3〇2a、 302a......之各項，係藉模樹脂306被樹脂密封。 尚且’持續内引線3〇2a在外引線3〇2b，形成鮮劑部3〇2c (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------. 經濟部智慧財產局員工消費合作社印製Pad) 202f, inner leads 202a, 202a ... and outer leads 202b, 202b ... are so-called single-layer lead frames formed by stamping a single copper bar. Here, the top sheet in a single-layer lead frame is equivalent to a heat spreader in a multi-layer lead frame, and has a function of mounting a semiconductor element in the same way as a heat spreader. — — — — — — · I ----- I ^ · 1111111 «(Please read the notes on the back before filling in this page) Home Standard (cG S) A4 Specification (2) 〇 × 297mm 483139 A7 Worker V. Description of the Invention (The top material plate 202f is bent downwards during punching, and a support bar is supported on the periphery of the lead frame 202. In addition, on the top material plate 202f, An adhesive (not shown) such as a scale adhesive paste is used to adhere to the semiconductor device 203. The electrode terminals (not shown) of the semiconductor device 203 and the inner leads 202a, 202a, ... are borrowed from the gold wires 204, 204 ... Wire-bonded. In addition, each of the semiconductor element mounting surface of the top plate 202f, the semiconductor element 203, the gold wires 204, 204, ..., and the inner leads 202a, 202a ... In this case, the mold resin 205 is sealed by the resin. Furthermore, the inner lead 202a and the outer lead 202b are continuously formed to form a dopant portion 202e and a rising portion 202d, but these are the same as those in the conventional semiconductor device Therefore, the description is omitted. On the one hand, the semiconductor device 3 (H) shown in FIG. 1 (b) uses its leads 302, ... and the heat spreader 303, the two-layer lead frame 308 laminated with the adhesive tape 307 on both sides. Among them, the lead 302 and the heat spreader 303 are formed by stamping and processing other copper bars respectively. Especially The heat spreader 30 is formed by pressing a copper bar formed by a recess. At the bottom of the recess, the device 304 is adhered by an adhesive (not shown) such as a scale adhesive paste. The semiconductor device 304 of Each of the electrode electrons (not shown) and the inner leads 3202a, 302aa, ... are welded by metal wires by gold wires 305, 305, etc. In addition, the semiconductor element of the heat spreader 303 is mounted The surface, the semiconductor element 304, the gold wires 305, 305, ..., and the inner leads 3202a, 302a, ... are sealed with resin by the mold resin 306. 3〇2a on the outer lead 3〇2b to form the freshener section 3〇2c (Please read the precautions on the back before filling this page) Installation -------- Order ---------. Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperative
483139483139
經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
與立起部302d，但由於此等與關於在習知例之半導體裝置 及如第1圖所示之半導體裝置201中者相同，所以省略其說 明。 在此，無論在上述之半導體裝置201及301之任1項中， 由於頂料板202f及熱擴散器303，係沖壓加工銅條所形成 者，所以其厚度可以比在習知例中之熱擴散器1〇3(參照第 18圖）之厚度還薄。藉此，由於頂料板2〇2f及熱擴散器3〇3 之重量變輕，所以此等單層引線框202及多層引線框308之 重量也變成比習知者輕。 但是，在半導體裝置201及301中，僅頂料板2〇2f及熱 擴散器303之厚度變薄，而金線2〇4、204......及305、305...... 之長度卻比習知者還長。如此金線變長之後，金線的成本 提昇，最後產生所謂半導體裝置的成本變高之新的問題。 鑑於此點，本申請案之發明者，發明如以下所示之引 線框及使用該引線框之半導體裝置。 針對關於本發明之1實施型態之引線框及使用該引線 框之半導體裝置加以說明。 針對關於本發明之1實施型態之引線框及使用該引線 框之半導體裝置’ 一面參照第2圖及第3圖一面加以說明。 第2圖係針對關於本實施型態之引線框及使用該引線框之 半導體裝置所示之平面圖。而且，第3圖為第2圖之A-B截 面圖。 第2圖所示關於本實施型態之半導體裝置401，其外引 線402c、402c......係由半導體裝置之4邊突出之所謂 --------------裝--- (請先閱讀背面之注意事項再填寫本頁) .. -線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 11 A7 A7It is the same as the raised portion 302d, but these are the same as those in the conventional semiconductor device and the semiconductor device 201 shown in Fig. 1, so the description is omitted. Here, in any of the above-mentioned semiconductor devices 201 and 301, since the top material plate 202f and the heat spreader 303 are formed by stamping copper bars, their thickness can be higher than that of the conventional example. The thickness of the diffuser 103 (see FIG. 18) is thin. As a result, since the weight of the top material board 202f and the heat spreader 303 becomes lighter, the weights of these single-layer lead frames 202 and multilayer lead frames 308 also become lighter than those of the conventional art. However, in the semiconductor devices 201 and 301, only the thickness of the top plate 202f and the heat spreader 303 becomes thin, and the gold wires 204, 204, ..., and 305, 305 ... . But longer than the learner. After the gold wire becomes longer in this way, the cost of the gold wire increases, and finally a new problem arises that the cost of the so-called semiconductor device becomes higher. In view of this, the inventor of the present application has invented a lead frame and a semiconductor device using the lead frame as shown below. A lead frame according to a first embodiment of the present invention and a semiconductor device using the lead frame will be described. The lead frame and the semiconductor device using the lead frame according to the first embodiment of the present invention will be described with reference to FIGS. 2 and 3. Fig. 2 is a plan view showing a lead frame of this embodiment and a semiconductor device using the lead frame. Fig. 3 is a cross-sectional view taken along the line A-B in Fig. 2. Regarding the semiconductor device 401 of this embodiment shown in FIG. 2, the outer leads 402c, 402c ... are so-called ------------- protruding from the four sides of the semiconductor device. -Packing --- (Please read the notes on the back before filling in this page) .. -Line · This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 11 A7 A7
五、發明說明（9 ) QFP(Quad-Flat-Package)型之半導體裝置。該半導體裝置 4〇 1 ’係如第3圖所示被安裝於主印刷電路板等之安裝基板 409 上。 (請先閱讀背面之注意事項再填寫本頁) 而且’如第3圖所示，該半導體裝置4〇1，係使用其引 線402、402......之内引線402a、402a......之各項之末端部， 藉兩面黏著膠帶被黏著於熱擴散器403之半導體元件搭載 面之周緣部之2層之多層引線框408。 而且’在該多層之引線框408之外引線4〇2c、 4〇2c......，形成銲劑部402d與立起部402e。由於此等與關 於習知例之半導體裝置中者相同，所以省略其說明。 另外’當著眼於熱擴散器403後，在該半導體元件搭載 面’藉刻度黏著膏等之黏著劑（未圖示）黏著半導體元件 404。另一方面，其半導體元件搭載面，係其相反側面未被 樹月旨岔封而露出於外部。從而，在半導體元件404所發生的 熱’透過熱擴散器403很快的放熱至外部。 黏著於該熱擴散器403上之半導體元件404之電極端子 之各項，係藉金線405、405……被與内引線402a、402a…… 之分別之末端部金屬焊接。藉此，引線4〇2、4〇2······與半 經濟部智慧財產局員工消費合作社印製 導體元件404變成電氣的接續。而且，此等半導體元件4〇4、 金線405、405......、内引線402a、402a.......及熱擴散器 403之半導體元件搭載面，係被藉模樹脂406樹脂密封。 然而，當著眼於内引線402a、402a……後，在面向該 内引線402a、402a......之末端之中途部，設置面向熱擴散 器403之半導體元件搭載面彎曲之彎曲部4〇2b、4〇2b....... 12 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公爱） 9 ^ 經濟部智慧財產局員工消費合作社印製 A7 __________B7___ 發明說明（10 ) 在此，藉設置如此之彎曲部402b、402b……，希望引 起注意熱擴散器403之厚度可以比習知者更薄。也就是，在 習知中’如由第18圖可以了解，熱擴散器1〇3a之厚度，係 概略等於由半導體裝置101安裝面道内引線102a之垂直方 向的距離。同樣的，即使在本實施型態中，如由第3圖可以 了解’熱擴裝器403之厚度，係概略等於由半導體裝置401 安裝面道内引線402a之末端部之垂直方向的距離。但是， 在本實施型態，藉上述之彎曲部4〇2b、402b.......内引線 402a、402a......之末端部與半導體裝置401之安裝面之垂直 方向之距離變成比習知者還短。具體而言，僅彎曲部402b、 402b ••之’考曲深度部分’其距離變成比習知還短。而且， 僅如此變短之部分，也就是僅概略相等於彎曲部4〇2b、 402b......之彎曲深度部分，其熱擴散器403之厚度變成比習 知還薄。 在本實施型態中，將半導體裝置401之厚度作成2mm， 將該彎曲部402b之彎曲深度作成約〇.4mm程度。而且，該 場合’可以將熱擴散器403之厚度作成約〇2mm程度。該厚 度顯著的比習知例之厚度（約2〇mm)還薄。 為此，熱擴散器403之重量，與習知例之熱擴散器 1〇3(參照第18圖）之重量相比較顯得格外的輕。藉此，多層 引線框408的重量變輕，使用該多層引線框4〇8之半導體裝 置401與習知者相比可以更加輕量化。 更進一步，藉該彎曲部4〇2b、402b......,與無該·青曲 部402b、402b......的場合相比，希望被引起注意的是内引 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公爱） -------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 13 483139 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（11) 線402a、402a……之末端與半導體元件404之距離變短。此 點，若比較如第1(a)及（b)圖所示之半導體裝置2〇1及301， 與關於本實施型態之半導體裝置4〇1就可以明白。 第1(a)及（b)圖之分別所示之單層引線框2〇2及多層引 線框308，係未具有上述之彎曲部4〇2b。為此，内引線之末 端與半導體元件之距離，僅熱擴散器2〇2{^及3〇3之厚度比習 知還薄部分變長。 對於此’在關於本實施型態之半導體裝置4〇 1中，與上 述之單層引線框202、及多層引線框3〇8相比較，僅彎曲部 402b、402b......之彎曲之深度部分，可以縮短内引線402 的末端與半導體元件4〇4之距離。 藉此，在本實施型態中，與半導體裝置2〇1及3〇1相比 較，可以縮短金線405之長度，不會產生所謂金線的成本變 南之問題。 尚且，在多層引線框中，與單層引線框相比較，希望 被引起注意的是所謂可以將熱擴散器的面積變大。也就 是，在單層引線框中，由於引線與頂料板係藉沖壓加工同 之銅條所形成的’所以在各各之内引線之末端部所圍成 之領域形成頂料板。為此，無法在單層引線框形成比該領 域面積還大面積之頂料板。另-方面，如第3圖所示，在多 層引線框408之中，引線4〇2、術·.····與熱擴散器4〇3,係 由分別之構件所形成。如後所述，此等引線402、402…… 與熱擴散器403，係沖壓加工分別之銅條所製作而成。為 此在夕層引線框中，沒有限制在單層引線框可以見到之 本紙張尺度中關家標準 297公釐） I ^----,ρ-----Awl --------訂---I----- (請先閱讀背面之注意事項再填寫本頁) 483139 A7 B7 經濟部智慧財產局員工消費合作社印製5. Description of the invention (9) QFP (Quad-Flat-Package) type semiconductor device. This semiconductor device 401 'is mounted on a mounting substrate 409 such as a main printed circuit board as shown in FIG. (Please read the precautions on the back before filling out this page) And 'As shown in Figure 3, this semiconductor device 401 uses its inner leads 402a, 402 ..... The end portions of each item are adhered to the two-layered multilayer lead frame 408 on the peripheral edge portion of the semiconductor element mounting surface of the heat spreader 403 by two-sided adhesive tape. In addition, the leads 402c, 402c, etc. are formed outside the multilayer lead frame 408 to form a solder portion 402d and a rising portion 402e. Since these are the same as those in the conventional semiconductor device, the description is omitted. In addition, "focusing on the heat spreader 403, the semiconductor element 404 is adhered to the semiconductor element mounting surface" with an adhesive (not shown) such as a scale adhesive paste. On the other hand, its semiconductor element mounting surface is exposed to the outside without being sealed by the tree moon. Therefore, the heat generated in the semiconductor element 404 is quickly radiated to the outside through the heat spreader 403. Each of the electrode terminals of the semiconductor element 404 adhered to the heat spreader 403 is metal-bonded to the respective end portions of the inner leads 402a, 402a, ... via gold wires 405, 405, .... As a result, the lead wires 402, 402, etc. are printed with the conductors 404, which are printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and become conductive connections. In addition, the semiconductor element mounting surfaces of these semiconductor elements 404, gold wires 405, 405, ..., inner leads 402a, 402a, ..., and heat spreader 403 are made of molded resin. 406 resin seal. However, focusing on the inner leads 402a, 402a, ..., a bent portion 4 which is bent toward the semiconductor element mounting surface of the heat spreader 403 is provided in the middle of the ends facing the inner leads 402a, 402a, .... 〇2b, 4〇2b ....... 12 This paper size is applicable to China National Standard (CNS) A4 (21〇X 297 public love) 9 ^ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 __________B7___ Description of the invention (10) Here, by providing such curved portions 402b, 402b, ..., it is hoped that the thickness of the heat spreader 403 may be thinner than that of a conventional person. That is, in the conventional art, as can be understood from Fig. 18, the thickness of the heat spreader 103a is roughly equal to the distance in the vertical direction of the leads 102a in the mounting surface of the semiconductor device 101. Similarly, even in this embodiment, as shown in Fig. 3, the thickness of the thermal expansion device 403 is roughly equal to the vertical distance of the end portion of the lead 402a in the mounting surface of the semiconductor device 401. However, in this embodiment mode, the end portions of the inner leads 402a, 402a, ... of the above-mentioned bent portions 402b, 402b,... And the mounting surface of the semiconductor device 401 are perpendicular to each other. The distance becomes shorter than the learner. Specifically, the distance between the bent portions 402b, 402b and the ‘testing depth portion’ is shorter than the distance. Moreover, the thickness of the heat spreader 403 becomes thinner than conventionally only in such a short portion, that is, only a portion having a bending depth roughly equal to the bending portions 402b, 402b, .... In this embodiment, the thickness of the semiconductor device 401 is 2 mm, and the bending depth of the bending portion 402 b is about 0.4 mm. In this case, the thickness of the heat spreader 403 may be about 0 2 mm. This thickness is significantly thinner than the thickness of the conventional example (about 20 mm). For this reason, the weight of the heat spreader 403 is extremely light compared with the weight of the conventional heat spreader 103 (refer to FIG. 18). Thereby, the weight of the multilayer lead frame 408 is reduced, and the semiconductor device 401 using the multilayer lead frame 408 can be made lighter than a conventional one. Furthermore, compared with the case where the curved part 402b, 402b, ... is not used, it is desired to draw attention to the internally-introduced paper by using the curved parts 402b, 402b, ... Standards apply to China National Standard (CNS) A4 specifications (21〇X 297 public love) ------------- Installation -------- Order --------- (Please read the precautions on the back before filling this page) 13 483139 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (11) The distance between the ends of the wires 402a, 402a ... and the semiconductor element 404 varies. short. This point can be understood by comparing the semiconductor devices 2101 and 301 shown in FIGS. 1 (a) and 1 (b) with the semiconductor device 4001 of this embodiment. The single-layer lead frame 202 and the multi-layer lead frame 308 shown in Figs. 1 (a) and (b), respectively, do not have the above-mentioned bent portion 402b. For this reason, the distance between the end of the inner lead and the semiconductor element is increased only by the thicknesses of the heat spreaders 202 and 303, which are thinner than conventional. In this regard, in the semiconductor device 401 according to this embodiment, compared with the single-layer lead frame 202 and the multi-layer lead frame 308 described above, only the bent portions 402b, 402b, ... are bent. The depth portion can shorten the distance between the end of the inner lead 402 and the semiconductor element 404. Accordingly, in this embodiment mode, the length of the gold wire 405 can be shortened compared with the semiconductor devices 201 and 301, and the problem of the so-called gold wire cost reduction does not occur. In addition, compared with single-layer lead frames, it is desirable to draw attention to the fact that the area of the heat spreader can be increased. That is, in a single-layer lead frame, since the leads and the top plate are formed by stamping the same copper bars, the top plate is formed in the area surrounded by the end portions of the leads. For this reason, it is not possible to form a top sheet having a larger area than the area in a single-layer lead frame. On the other hand, as shown in FIG. 3, in the multi-layered lead frame 408, the lead 402, ..., and the heat spreader 403 are formed by separate members. As will be described later, these leads 402, 402, ... and the heat spreader 403 are made by stamping copper bars, respectively. For this reason, there is no restriction on the paper standard of 297 mm in the paper size that can be seen in a single-layer lead frame. I ^ ----, ρ ----- Awl ----- --- Order --- I ----- (Please read the notes on the back before filling out this page) 483139 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs
本紙張尺度義中1國家標準（6Ϊ^)Α4規格⑵G χ 297公爱)_ 五、發明說明（η ,、、、擴政器（頂料板）之面積。 從而，在本實施型態中，熱擴散器403的厚度即使比習 知還薄，藉該熱擴散器403面積大到所望之大小，可以某種 私度的防止熱擴散器403的熱容量之變小。此事將消費電力 大的LSI等作為半導體元件4〇4使用的場合是有用的。 尚且’與半導體裝置401同樣，即使如第4圖乃至第6 圖所不引線框及使用該引線框之半導體裝置，亦可以發揮 與上述同樣之作用及效果。第4圖乃至第6圖，係針對關於 本貫施型態之其他之引線框及使用該引線框之半導體裝置 所示之截面圖。在第4圖乃至第6圖中，在與第2圖及第3圖 所示相同之構成構件，則賦予與此等相同之參照符號，以 下之中則省略其說明。 首先’第4圖所示之半導體裝置501，係在第3圖所示之 半導體裝置401中，將比外引線4〇2(：還内側之部分向上下反 轉，所謂安裝面係使熱擴散器403露出於相反側之面。藉作 成如此之構造，與半導體裝置4〇1相比較，可以更一層提高 擴政器403之放熱效果。 而且’如第5圖所示之半導體裝置6〇1，與上述之半導 體裝置401及501不同，係使用未形成外引線之多層引線框 6〇2。該多層引線框6〇2，係以兩面黏著膠膠帶4〇7黏著引線 402 ' 402......與熱擴散器403所形成的。 更進一步’在半導體裝置601中，内引線402a、402a...... 表面之一部露出於該半導體裝置之安裝面之周緣部。如此 路出部分之内引線402a、402a......被銲劑於主印刷電路板 15 ^--------t---------Μ (請先閱讀背面之注意事項再填寫本頁) 483139 五、發明說明（l3) 荨之女裝基板409，藉該等半導體裝置6〇1與安裝基板409 被電氣的且機械的接續。換言之，表面露出之部分之内引 (請先閱讀背面之注意事項再填寫本頁) 線402a、402a……，係作為半導體裝置601之外部接續端子 之機能。 如此，在半導體裝置6〇1中，由於外引線未由其外周突 出，所以可以縮小其尺寸。為此，與半導體裝置4〇1及5〇1 相比較，其安裝面積可以變小，可以在安裝基板4〇9上以高 密度安裝半導體裝置601。 與該半導體裝置601同樣，如第6圖所示之半導體裝置 701也可以在安裝基板4〇9上以高密度安裝。該半導體， 也變成使比第5圖所示半導體裝置6〇1之彎曲部4〇2b還内側 之部分向上下反轉之構造。為此，該半導體裝置7〇1，其所 謂安裝面係變成熱擴散器403露出於相反側面之構造。藉 此’與半導體裝置601相比較，可以更一層提高熱擴散器4〇3 之放熱效果。 針對關於本發明之1實施型態之引線框及使用該引線 框之半導體裝置之製造方法加以說明。 經濟部智慧財產局員工消費合作社印製 其次，針對在第3圖所說明之多層引線框408及使用該 引線框之半導體裝置之製造方法，一面參照第7圖乃至第i 3 圖一面加以§兒明。第7圖乃至第13圖為針對關於本實施型態 之引線框及使用該引線框之半導體裝置之製造方法所示之 平面圖。 首先在最初，如第7圖所示，準備内引線402a、402a...... 之各項之末端在相聯繫之狀態之引線框41〇。如圖所示，因 16 - A7 —_B7 五、發明說明（Μ) 應4個之半導體裝置401(參照第2圖）之引線，由於形成於該 引線框410 ’所以該引線框410為4連引線框。如此之引線框 - 410 ’係藉沖壓加工銅條所製作而成。 其次，如第8圖所示，沖壓加工該引線框410，形成内 引線402a、402a......之分別之彎曲部402b、402b……。 其次，如第9圖所示，彎曲部402b、402b……，除了形 成之4連引線框41〇之外，準備了 4個之兩面黏著膠帶407、 407......。在該兩面黏著膠帶407、407……之各項，開口可 以收納半導體元件404(參照第3圖）程度之開口部407a、 407a...... 〇 持續’如第10圖所示，將該兩面黏著膠帶4〇7、407…… 之各項，黏著於内引線402a、402a……之末端。 其次’如第11圖所示，藉沖壓加工將末端聯繫在一起 狀態之内引線402a、402a......之各項之末端切離。在此， 如以上以兩面黏著膠帶407、407......，將内引線402a、 402a......固定後，藉切離内引線402a、402a......之末端， 希望引起注意的是可以防止該末端相互之間之接觸。 尚且’在如第9圖及第10圖所示之過程中，開口部 407a、407a......使用開口之兩面黏著膠帶407、407....... 但本發明並不限制於此等，即使開口部使用未開口之兩面 黏著膠帶亦可。此種場合，在如第丨丨圖所示之過程中，在 切離内引線402a、402a……之際，開口部同時的向兩面黏 著膠帶開口。 其次，如第12圖所示，除了該4連引線框41〇之外，準 (請先閱讀背面之注意事項再填寫本頁) 裝 訂· •線· 經濟部智慧財產局員工消費合作社印製 17 483139 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 A7 ---- -____ 五、發明說明（I5 ) 備形成4個之熱擴散器403、403……之銅條U。該熱擴散器 403、403……，係藉沖壓加工形成於銅條411者。而且，該 熱擴散器403、403......，係在該沖壓加工時藉同時形成之 支撐構件411 a、411 a......，被支樓於銅條411之染體4丨丨b。 而且，將該4連引線框410與銅條411積層。藉此，介由 兩面黏著膠帶407、407……（參照第11圖），熱擴散器403、 4〇3......被黏著於内引線402a、402a……之末端。 在此，熱擴散器403、403……之各項，可以沖壓加工 製作聯繫於如第12圖所示狀態之銅條411，希望可以引起注 意的是為了可以將熱擴散器403、403......之厚度作成比習 知還薄。也就是，在習知中，熱擴散器103、1〇3......(參照 第18圖）之厚度約為2mm，以此厚度，在沖壓加工製作熱擴 散器103、103……之各項聯繫之物有其極大之困難。對於 此’在本實施型態中，熱擴散器403、4〇3......之厚度很薄 約為0.2mm程度，以該厚度形成可以很容易的進行上述之 沖壓加工。 如此，將4連引線框410與銅條411積層之後，藉幫曲等 由支撐構件411a、411a......，將熱擴散器403、403......切 離，完成如第13圖所示之4連多層引線框412。如圖所示， 在該4連多層引線框412形成4個之多層引線框408。 爾後，藉眾知之技術，進行半導體元件搭載、金屬線 焊接、樹脂密封等，完成如第2圖及第3圖所示之半導體裝 置401，與如第4圖所示之半導體裝置5〇!。 尚且，具有如第5圖所示之半導體裝置6〇1之多層引線 (請先閱讀背面之注意事項再填寫本頁) ▼•裝--------訂· ----The national standard of this paper is 1 national standard (6Ϊ ^) A4 specification ⑵ G χ 297 public love) _ 5. Description of the invention (η ,,,, area of the expansion device (top material plate). Therefore, in this implementation form Even if the thickness of the heat spreader 403 is thinner than the conventional one, by using the area of the heat spreader 403 as large as desired, it is possible to prevent the thermal capacity of the heat spreader 403 from being reduced to a certain degree of privacy. This will consume a large amount of power LSIs are useful when the semiconductor element 400 is used. It is also the same as the semiconductor device 401, even if the lead frame and the semiconductor device using the lead frame are not shown in FIG. 4 to FIG. 6. The same functions and effects as described above. Figs. 4 to 6 are cross-sectional views of other lead frames and semiconductor devices using the lead frames in this embodiment. Figs. 4 to 6 Here, the same constituent members as those shown in FIGS. 2 and 3 are given the same reference numerals, and descriptions thereof are omitted below. First, the semiconductor device 501 shown in FIG. 4 is In the semiconductor device 401 shown in FIG. 3, Reverse the outer lead 402 (upside down). The so-called mounting surface exposes the heat spreader 403 to the opposite side. By using such a structure, it is possible to compare it with the semiconductor device 401. Further, the heat dissipation effect of the expander 403 is improved. Moreover, the semiconductor device 601 shown in FIG. 5 is different from the above-mentioned semiconductor devices 401 and 501 in that a multilayer lead frame 602 without external leads is used. The multilayer lead frame 602 is formed by bonding the leads 402 '402 ... and the heat spreader 403 with two-sided adhesive tapes 407. Furthermore, in the semiconductor device 601, the inner leads 402a, 402a ... One part of the surface is exposed at the peripheral edge of the mounting surface of the semiconductor device. In this way, the leads 402a, 402a ... are soldered to the main printed circuit board 15 ^- ------ t --------- Μ (Please read the notes on the back before filling in this page) 483139 V. Description of the invention (l3) Women's clothing substrate 409, borrow these semiconductor devices 6〇1 and the mounting substrate 409 are electrically and mechanically connected. In other words, the exposed part of the surface is led (please read the back first (Please fill in this page again before filling in this page) Lines 402a, 402a ... are functions of external connection terminals of the semiconductor device 601. Thus, in the semiconductor device 601, since the outer lead does not protrude from its outer periphery, it can be reduced Its size. For this reason, compared with the semiconductor devices 401 and 501, the mounting area can be reduced, and the semiconductor device 601 can be mounted at a high density on the mounting substrate 409. Similar to the semiconductor device 601, such as The semiconductor device 701 shown in FIG. 6 can also be mounted at a high density on a mounting substrate 409. The semiconductor is also made to be a portion inside the curved portion 402b of the semiconductor device 601 shown in FIG. 5 Reverse the structure up and down. For this reason, the so-called mounting surface of the semiconductor device 701 has a structure in which the heat spreader 403 is exposed on the opposite side. Compared with the semiconductor device 601, the heat radiation effect of the heat spreader 403 can be further improved. The lead frame of the first embodiment of the present invention and a method for manufacturing a semiconductor device using the lead frame will be described. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Secondly, for the multilayer lead frame 408 described in FIG. 3 and the manufacturing method of the semiconductor device using the lead frame, refer to FIGS. 7 to i 3 and refer to it. Bright. Figs. 7 to 13 are plan views showing the lead frame and the manufacturing method of the semiconductor device using the lead frame according to the embodiment. First, as shown in FIG. 7, a lead frame 410 in which the ends of each of the inner leads 402a, 402a,... Are connected is prepared. As shown in the figure, since 16-A7 —_B7 V. Description of the Invention (M) There are four leads of the semiconductor device 401 (refer to FIG. 2), and since the lead frame 410 is formed in the lead frame 410, the lead frame 410 is a 4-connector. Lead frame. This lead frame-410 'is made by stamping copper bars. Next, as shown in Fig. 8, the lead frame 410 is punched to form bent portions 402b, 402b, ... of the inner leads 402a, 402a, ..., respectively. Next, as shown in Fig. 9, the bent portions 402b, 402b, ... are provided with four double-sided lead frames 410, and four double-sided adhesive tapes 407, 407, ... are prepared. Each of the two sides is adhered to each of the tapes 407, 407, etc., and the openings 407a, 407a, etc. to which the semiconductor element 404 (see FIG. 3) can be accommodated in the opening are continued as shown in FIG. Each of the two sides of the tapes 407, 407, ... is adhered to the ends of the inner leads 402a, 402a, .... Secondly, as shown in FIG. 11, the ends of each of the inner leads 402a, 402a, ... are cut off by the punching process to connect the ends together. Here, as above, the inner leads 402a, 402a ... are fixed with the adhesive tapes 407, 407 ... on both sides, and then the ends of the inner leads 402a, 402a ... are cut away by cutting. It is desirable to draw attention to prevent the ends from contacting each other. Also, in the process shown in FIG. 9 and FIG. 10, the openings 407a, 407a ... use the adhesive tapes 407, 407 on both sides of the opening ... but the present invention is not limited In this case, it is also possible to use an unopened double-faced adhesive tape for the opening portion. In this case, when the inner leads 402a, 402a, ... are cut off during the process as shown in Fig. 丨, the openings are simultaneously opened with adhesive tape openings on both sides. Second, as shown in Figure 12, in addition to the 4-connected lead frame 41〇, (please read the precautions on the back before filling out this page) Binding · • Thread · Printed by the Intellectual Property Bureau Staff Consumer Cooperatives 17 483139 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ---- -____ V. Description of Invention (I5) A copper strip U with 4 heat spreaders 403, 403 ... is prepared. The heat spreaders 403, 403,... Are formed on the copper bar 411 by press processing. In addition, the heat spreaders 403, 403, ... are the supporting members 411 a, 411 a, ... formed at the same time by the stamping process, and are supported by the dyed body of the copper bar 411. 4 丨 丨 b. The four-lead lead frame 410 and the copper bar 411 are laminated. Thereby, the heat spreaders 403, 403, ... are adhered to the ends of the inner leads 402a, 402a, ... via the double-sided adhesive tapes 407, 407 ... (refer to FIG. 11). Here, each of the heat spreaders 403, 403, etc. can be stamped to produce a copper bar 411 connected to the state shown in Fig. 12. It is hoped that the heat spreaders 403, 403 ... The thickness of .... is thinner than conventional. That is, in the prior art, the thicknesses of the heat spreaders 103, 103, ... (refer to FIG. 18) are about 2 mm, and the heat spreaders 103, 103, etc. are manufactured by press processing with this thickness. The various connected things have their great difficulties. In this embodiment, the thicknesses of the heat spreaders 403, 403,... Are very thin, about 0.2 mm, and the above-mentioned punching can be easily performed by forming the thickness. In this way, after the four lead frames 410 and the copper bar 411 are laminated, the heat spreaders 403, 403, ... are cut away from the supporting members 411a, 411a, ... by the help of a bracket, etc., and the completion is as follows: The four-layer multilayer lead frame 412 shown in FIG. 13. As shown in the figure, four multilayer lead frames 408 are formed on the four-layer multilayer lead frame 412. Thereafter, the semiconductor device mounting, wire bonding, resin sealing, etc. are performed by a well-known technology to complete the semiconductor device 401 shown in FIGS. 2 and 3 and the semiconductor device 50 shown in FIG. 4. Moreover, there are multilayer leads for the semiconductor device 601 as shown in Fig. 5 (Please read the precautions on the back before filling out this page) ▼ • Installation -------- Order · ----
I ϋ 1_1 I Φ 483139 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（I6) 框602,及具有如第6圖所示之半導體裝置701之多層引線框 702 ’也與此等同樣被製造。 若依以上說明之多層引線框408之製造方法，由於黏著 形成4個之熱擴散器403、403……之銅條411與引線框410， 所以4個之熱擴散器403、403 ......—度被黏著於引線框 410。為此，熱擴散器1〇3、103……（參照第19圖），與1個1 個的被黏著於引線框11 〇之習知例相比較，可以縮短多層引 線框408之製造時間。具體而言，若依本申請案發明者之調 查的結果，多層引線框408之製造時間變成習知例之1/3。 藉此，由於多層引線框408之製造成本也比習知便宜，所以 半導體裝置401及501之製造成本也比習知便宜。同樣的， 多層引線框602(參照第5圖）及多層之引線框702(參照第6 圖）之製造成本也比習知便宜，使用此等之半導體裝置6〇 i 及701之製造成本也變成比習知更便宜。 尚且，在本實施型態中，已經以4連之多層引線框412 之製造方法為例加以說明，但本發明並不限制於此等。也 就是’即使使用任一之連數之多層引線框來替代4連之多層 引線框412，亦可以發揮與上述之同樣的作用與效果。 針對作為比較例之單層引線框及使用該引線框之半導 體裝置加以說明。 其次，針對單層引線框及使用該引線框之半導體裝置 作為比較例，一面參照第14圖及第15圖一面加以說明。 該比較例係與由多數之銅條所製作之本發明之多層引 線框不同，為一種由單一之銅條所製作之單層引線框。從 -------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁)I ϋ 1_1 I Φ 139 139 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (I6) Box 602, and a multilayer lead frame 702 with a semiconductor device 701 as shown in FIG. 6 It is also manufactured. If according to the above-mentioned manufacturing method of the multilayer lead frame 408, four heat spreaders 403, 403, etc. are formed due to the adhesion of four copper bars 411, 403, etc. of the heat spreader 403, 403 ... ..- Degrees are adhered to the lead frame 410. For this reason, the heat spreaders 103, 103, etc. (refer to FIG. 19) can shorten the manufacturing time of the multilayer lead frame 408 as compared with a conventional example of being adhered to the lead frame 110. Specifically, according to the result of investigation by the inventor of the present application, the manufacturing time of the multilayer lead frame 408 becomes 1/3 of the conventional example. Accordingly, since the manufacturing cost of the multilayer lead frame 408 is also cheaper than the conventional one, the manufacturing cost of the semiconductor devices 401 and 501 is also cheaper than the conventional one. Similarly, the manufacturing cost of the multilayer lead frame 602 (refer to FIG. 5) and the multilayer lead frame 702 (refer to FIG. 6) is also cheaper than conventional, and the manufacturing cost of using these semiconductor devices 60i and 701 also becomes Cheaper than conventional. Moreover, in this embodiment, the manufacturing method of the 4-layer multilayer lead frame 412 has been described as an example, but the present invention is not limited to these. That is, 'Even if a multilayer lead frame of any number is used instead of the multilayer lead frame 412 of four numbers, the same functions and effects as described above can be exhibited. A single-layer lead frame as a comparative example and a semiconductor device using the lead frame will be described. Next, a single-layer lead frame and a semiconductor device using the lead frame as a comparative example will be described with reference to FIGS. 14 and 15. This comparative example is different from the multilayer lead frame of the present invention made of a large number of copper bars, and is a single-layer lead frame made of a single copper bar. From ------------- install -------- order --------- line (please read the precautions on the back before filling this page)
經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
而，作為頂料板也就是熱擴散器可以利用之銅條部位，由 於僅限於以配列成放射狀之内引線所圍成之内測部位，所 以具有所謂熱擴散器之面積被限制之缺點。也就是，在本 ^明藉熱擴散器面積比上述内側部位還大，補足因熱擴散 器之厚度比習知還薄所產生之熱容量的減少，但在比較例 由於熱擴散器面積被限制⑨上述内側之部位因而益法補 足。 第14圖為針對比較例之引線框及使用該引線框半導體 裝置所示之平面圖。而且’第15圖為第14圖之α·β載面圖。 第14圖所示比較例之半導體裝置8〇1，係一種外引線 8〇2b'8〇2b·.·..·由半導體裝置之4邊突出之QFP型之半導體 裝置。該半導體裝置8()1，係如第15圖所示被安裝於主印刷 電路板等之安裝基板806上。 本發明之半導體裝置4〇1、501、601及7〇1，與比較例 之半導體裝置801之不同點，係相對於半導體裝置4〇1、 501、601及7〇1具有多層引線框，而該半導體裝置8〇1則僅 具有單層引線框這一點。 也就是，如第15圖所示引線框802,其頂料板⑽^、内 引線802a、802a……及外引線802b、802b…·.·之各項，係 使用沖壓加工單一之銅條所形成之單層引線框。 在此等之中，頂料板8〇2f，係在沖壓加工之際被面向 下方（安裝面）彎曲加工，藉在沖壓加工時同時形成支撐墊 802e、802e......,被支樓於單層引線框802之周緣部。 在此，形成該頂料板802f之銅條的厚度約為〇2mm， ίΗ ： ^» Μ-----------------φ·. (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 20 483139 A7 B7 五、發明說明（π) 此等與關於習知例之半導體裝置1〇1(參照第18圖）具有之 熱擴散器103之厚度相比格外的薄。為此，由於頂料板8〇2f 之重量與習知相比變成格外的輕，所以半導體裝置8〇 1之重 量也變成比習知還輕。 更進一步，該頂料板8〇2f，係與多層引線框的場合不 同’藉沖壓加工銅條同時的製作内引線8〇2a、802a......與 外引線802b、802b……。為此，在單層引線框802之製造過 程中，黏著頂料板802f於内引線802a、8〇2a……之過程就 變成不需要。藉此，由於單層引線框8〇2之製造時間可以比 習知縮紐，所以該單層引線框8〇2之製造成本也可以比習知 更加便宜。藉此使用單層引線框8〇2之半導體裝置8〇1之製 造成本也可以比習知便宜。 另外，在頂料板8〇2f之上，藉刻度黏著膏等之黏著劑 (未圖示）黏著半導體元件803。而且，該半導體元件8〇3之 電極電子之各項，係藉金線804、804……被金屬線焊接於 内引線802a、802a......之各項。藉此形成電氣接續引線 802、 802......與半導體體元件803。 而且，頂料板802f之半導體元件搭載面、半導體元件 803、 金線804、804......、及内引線802a、802a......之各項， 被藉模樹脂805樹脂密封。頂料板802f之半導體搭載面，係 指其相反側面並未藉該模樹脂805覆蓋而是露出於外部。藉 此，在半導體元件803中所發生之熱，透過頂料板8〇2f被迅 速的放熱到外部。 尚且’持續内引線802a在外引線802b ’形成銲劑部8〇2c ^--- (請先閱讀背面之注意事項再填寫本頁) ^-r.°J·- •線· 經濟部智慧財產局員工消費合作社印製However, as the top material plate, that is, the copper strip portion that can be used by the heat spreader, has the disadvantage that the area of the so-called heat spreader is limited because it is limited to the internal measurement portion surrounded by the inner leads arranged in a radial shape. That is, in the present invention, the area of the heat spreader is larger than the above-mentioned inner part, which makes up for the decrease in the heat capacity caused by the thickness of the heat spreader being thinner than conventional. However, in the comparative example, the area of the heat spreader is limited. The above-mentioned inner part is thus supplemented effectively. Fig. 14 is a plan view showing a lead frame of a comparative example and a semiconductor device using the lead frame. Fig. 15 is an α · β plane view of Fig. 14. The semiconductor device 8001 of the comparative example shown in FIG. 14 is a QFP type semiconductor device in which the outer leads 802b'802b are projected from the four sides of the semiconductor device. This semiconductor device 8 () 1 is mounted on a mounting substrate 806 such as a main printed circuit board as shown in FIG. The semiconductor devices 401, 501, 601, and 701 of the present invention are different from the semiconductor device 801 of the comparative example in that they have a multilayer lead frame with respect to the semiconductor devices 401, 501, 601, and 701, and This semiconductor device 801 has only a single-layer lead frame. That is, as shown in FIG. 15, the lead frame 802, the top sheet ⑽ ^, the inner leads 802a, 802a, ... and the outer leads 802b, 802b, ... are made of a single copper bar by stamping. Formed single-layer lead frame. Among these, the top material plate 802f is bent to face downward (mounting surface) during the press processing, and the support pads 802e, 802e, ... are supported at the same time during the press processing. It is located on the periphery of the single-layer lead frame 802. Here, the thickness of the copper bar forming the top plate 802f is about 0 2mm, ίΗ: ^ »Μ ----------------- φ ·. (Please read the Note: Please fill in this page again.) This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love) 20 483139 A7 B7 V. Description of the invention (π) This is related to the conventional semiconductor device 101 (Refer to FIG. 18) The thickness of the heat spreader 103 is extremely thin. For this reason, since the weight of the top plate 802f becomes extremely light as compared with the conventional one, the weight of the semiconductor device 801 also becomes lighter than the conventional one. Furthermore, the top sheet 802f is different from the case of a multi-layer lead frame. The inner leads 8202a, 802a, ... and the outer leads 802b, 802b, ... are simultaneously produced by stamping copper bars. For this reason, during the manufacturing process of the single-layer lead frame 802, the process of adhering the top plate 802f to the inner leads 802a, 802a, ... becomes unnecessary. Therefore, since the manufacturing time of the single-layer lead frame 802 can be shortened compared to the conventional one, the manufacturing cost of the single-layer lead frame 802 can also be cheaper than the conventional one. Thus, the manufacturing cost of the semiconductor device 801 using the single-layer lead frame 802 can also be cheaper than conventional. In addition, the semiconductor element 803 is adhered to the top plate 802f by an adhesive (not shown) such as a scale adhesive paste. Further, the items of the electrode electrons of the semiconductor element 803 are the items of the inner leads 802a, 802a, etc., which are soldered to the inner leads 802a, 802a, ... by metal wires. Thereby, the electrical connection leads 802, 802,... And the semiconductor body element 803 are formed. In addition, the semiconductor element mounting surface of the top plate 802f, the semiconductor element 803, the gold wires 804, 804, ..., and the inner leads 802a, 802a, ... are borrowed from the resin 805 resin. seal. The semiconductor mounting surface of the top plate 802f means that the opposite side of the top plate 802f is not covered by the mold resin 805 but is exposed to the outside. Thereby, the heat generated in the semiconductor element 803 is quickly released to the outside through the top plate 802f. Also, 'continuous inner lead 802a and outer lead 802b' form the soldering section 802c. ^ --- (Please read the precautions on the back before filling out this page) ^ -r. ° J ·-• Line · Employees of the Intellectual Property Office, Ministry of Economic Affairs Printed by Consumer Cooperatives
483139 .經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 A7 B7 五、發明說明（I9) 與立起部802d ’由於此等與關於習知例之半導體裝置中者 相同，所以省略說明。 在此，著眼於内引線802a，在面向該内引線802a之末 端之中途部，設置面向頂料板8〇2{*之半導體元件搭載面彎 曲之彎曲部802g。 為此’如在本發明之實施型態所說明，與無彎曲部8〇2g 得場合相比’内引線802a與半導體元件803之距離變短。從 而，在該半導體裝置801中，由於頂料板8〇2f之厚度如上述 即使薄金線804、804……的長度也沒有必要變長，所以金 線804、804......的成本也就不會產生變高之問題。 尚且’與半導體裝置801同樣，即使如第16圖所示之半 導體裝置，亦可以發揮與上述所述同樣之作用與效果。第 16圖為針對其他之比較例之引線框及使用該引線框之半導 體裝置所不之截面圖。在第16圖，在與第14圖及第15圖所 示相同之構成構件，則賦予此等同樣之參照符號，以下則 省略其說明。 第16圖所示之半導體裝置90卜與上述所說明之半導體 裝置801之不同點係如下所述。 首先，在半導體裝置9〇1中，使用未形成外引線之單層 引線框902。該單層引線框9〇2，係藉沖壓加工銅條形成内 引線802a、802a.......頂料板802f、及支撐墊802e、8〇2e…… 所構成的。 更進一步，在半導體裝置9〇1中，内引線8〇2a、8〇2a…… 之表面的一部，露出於該導體裝置9〇1之安裝面的周緣部。 —I—^------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 483139 A7483139. Printed by the Intellectual Property Office of the Ministry of Economic Affairs and Consumer Affairs Co., Ltd. A7 B7 V. Description of Invention (I9) and Stand-up Section 802d ′ Since these are the same as those in the conventional semiconductor device, explanations are omitted. Here, focusing on the inner lead 802a, a bent portion 802g which is bent toward the semiconductor element mounting surface of the top plate 802 {* is provided in the middle of the end portion facing the inner lead 802a. Therefore, as described in the embodiment of the present invention, the distance between the inner lead 802a and the semiconductor element 803 is shorter than that in the case where there is no bent portion 802g. Therefore, in this semiconductor device 801, since the thickness of the top plate 802f is as described above, it is not necessary to increase the length of the thin gold wires 804, 804, .... Therefore, the gold wires 804, 804, ... The cost will not increase. It is the same as the semiconductor device 801, and the semiconductor device shown in Fig. 16 can also exert the same function and effect as described above. Fig. 16 is a cross-sectional view of a lead frame for other comparative examples and a semiconductor device using the lead frame. In Fig. 16, the same constituent elements as those shown in Figs. 14 and 15 are given the same reference numerals, and descriptions thereof will be omitted below. The difference between the semiconductor device 90b shown in FIG. 16 and the semiconductor device 801 described above is as follows. First, in the semiconductor device 901, a single-layered lead frame 902 without external leads is used. The single-layer lead frame 902 is formed by forming inner leads 802a, 802a, ..., a top plate 802f, and support pads 802e, 802e, ... by stamping copper bars. Furthermore, in the semiconductor device 001, a part of the surface of the inner leads 802a, 802a, ... is exposed at the peripheral edge portion of the mounting surface of the conductor device 901. —I — ^ ------ install -------- order --------- (Please read the precautions on the back before filling this page) 483139 A7
請 先 閱 讀 背 之 注 意 事 項 再 填 寫 本 頁 k 訂 483139 A7 B7 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 五、發明說明（21) 該半導體裝置1001與剛才之半導體裝置901之不同 點，係如下所述。也就是，在半導體裝置901中，其安裝面 係指頂料板802f露出於相反側之面。相對於此，在半導體 裝置1001中，頂料板802f則露出於其安裝面。 更進一步’在面向半導體裝置1001之内引線8〇2&之末 端之中途部，形成由半導體體1〇01之安裝面面向頂料板 8〇2f之半導體元件搭載面的上方彎曲之彎曲部8〇2g。藉該 彎曲部802g，可以使内引線802a、802a······之末端與半導 體元件1001之距離縮短。為此，即使在該半導體裝置1 〇〇 1 中’不會產生所謂金線804、804……之長度變長之問題。 另外，頂料板802f，由於是沖壓加工厚度約為〇2mm 程度之銅條所形成，所以其厚度變成比習知還薄。藉此， 由於頂料板802f之重量可以比習知還輕，所以半導體裝置 1001之重量也比習知還輕。 更進一步，如上所述，頂料板802f與内引線8〇2a、 8〇2a……，係藉沖壓加工銅條同時的被製作而成。為此， 在單層引線框1002之製造過程中，由於不需要黏著頂料板 802f與内引線802a、802a......之步驟，所以其製造時間可 以比習知還縮短。藉此，單層引線框1〇〇2之製造成本可以 比習知還便宜，使用該單層引線框1〇〇2之半導體裝置ι〇〇ι 之製造成本也可以比習知更便宜。 如此，即使在比較例中亦可以得到與一部之本發明共 通之優點，但如前所述在本發明藉熱擴散器面積的增加， 可以補足因熱擴散器之厚度比習知還薄所產生之熱容量的 (請先閒讀背面之注意事項再填寫本頁) 訂！—拳· 24 - 483139 五、發明說明（22 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 減少’但在比較例則具有所謂熱擴散器面積被限制而無法 做補足之缺點。 〈產業上利用的可能性> 如以上之說明，若依據關於本發明之多層引線框，藉 ό又置上述之彎曲部於内引線，則熱擴散器之厚度可以比習 知還薄。藉此，由於熱擴散器之重量被輕量化，所以引線 框及具有該引線框之半導體裝置也可以輕量化。 更進一步，由於如此熱擴散器的厚度可以變薄，所以 形成可以藉沖壓加工銅條等之金屬製作該熱擴散器。若依 據該沖壓加工，則可以做成形成多數熱擴散器之金屬條。 而且，藉積層該金屬條與形成内引線之金屬條，變成可以 同時的積層多數之熱擴散器。藉此，可以使關於本發明之 引線框之製造時間比習知還要短縮。 另外藉上述内引線之，彎曲部，該内引線之末端部與 半導體元件之距離不會變長。為此，如上所示即使熱擴散 器之厚度變薄，電氣的接續内引線與半導體元件之金線的 長度沒有必要變長。 而且，若依據關於本發明之半導體裝置，具有如上述 之引線框，且外引線不回由其外周突出，露出於安裝面周 緣部之内引線形成外部接續端子。為此，外引線與由外周 突出之半導體裝置相比，由於其安裝面積變小，所以在安 裝基板以高密度安裝關於本發明之半導體裝置。 訂 線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 483139 A7 B7 五、發明說明（23) 經濟部智慧財產局員工消費合作社印製 元件標號對照 101 、 201 、 301 、 401 、 501 、 601 、 701 、 801 、 901 、 1001 …半導體裝置 102、 202、302、402、802、902、1002···引線 102a、202a、302a、402a、802a···内弓I 線 102b、202b、302b、402b、802b···夕卜引線 102c、202c、302c、402c、802c···焊劑部 102d、202d、302d、402d、802d···立起部 103、 303、403…熱擴散器 202f、802f…頂料板 104、 203、304、304、404、803···半導體元件 105、 204、305、405、804···金線 106、 205、306、406、805···模樹月旨 107、 307、407…兩面黏著膠帶 108、 308、408、602···多層引線框 109、 409、806…安裝基板 110、 410…引線框 111、 412…4連多層引線框 202e、802e…支撐墊 402b、802g···灣曲部 407a…兩面黏著膠帶之開口部 411…熱擴散器之形成鋼條 41 la…形成於銅條之支撐構件 411 b…銅條之框體 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 26 ——參裝--------訂i!_ (請先閱讀背面之注意事項再填寫本頁)Please read the notes before filling in this page. K Book 483139 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of Invention (21) The difference between this semiconductor device 1001 and the semiconductor device 901 just now is as follows. Described. That is, in the semiconductor device 901, the mounting surface means the surface on which the top plate 802f is exposed on the opposite side. On the other hand, in the semiconductor device 1001, the top plate 802f is exposed on its mounting surface. Furthermore, a bent portion 8 is formed in the middle portion of the end of the lead 8 2 & facing the semiconductor device 1001 from the mounting surface of the semiconductor body 1001 to the semiconductor element mounting surface of the top plate 8 2f. 〇2g. With this bent portion 802g, the distance between the ends of the inner leads 802a, 802a ... and the semiconductor element 1001 can be shortened. For this reason, even in this semiconductor device 001 ', there is no problem that the length of so-called gold wires 804, 804, etc. becomes long. In addition, since the top material plate 802f is formed of a copper bar having a thickness of about 0.02 mm by pressing, its thickness becomes thinner than conventional. Thereby, since the weight of the top material plate 802f can be lighter than conventional, the weight of the semiconductor device 1001 is also lighter than conventional. Furthermore, as described above, the top material plate 802f and the inner leads 802a, 802a,... Are simultaneously produced by stamping copper bars. For this reason, in the manufacturing process of the single-layer lead frame 1002, since the steps of adhering the top plate 802f and the inner leads 802a, 802a,... Are not required, the manufacturing time can be shortened compared to the conventional one. Thereby, the manufacturing cost of the single-layer lead frame 002 can be cheaper than the conventional one, and the manufacturing cost of the semiconductor device ιιι using the single-layer lead frame 002 can also be cheaper than the conventional one. In this way, even in the comparative example, the advantages common to one part of the present invention can be obtained, but as described above, the increase in the area of the heat spreader of the present invention can make up for the fact that the thickness of the heat spreader is thinner than conventional. Generated heat capacity (please read the precautions on the back before filling this page) Order! — Boxing · 24-483139 V. Description of the invention (22 The print of employee consumer cooperatives in the Intellectual Property Bureau of the Ministry of Economic Affairs has been reduced, but in the comparative example, there is a disadvantage that the area of the so-called heat spreader is limited and cannot be supplemented. <Possible industrial use Properties> As explained above, if the multilayer lead frame according to the present invention is used and the above-mentioned bent portion is placed on the inner lead, the thickness of the heat spreader can be thinner than conventional. Therefore, since the heat spreader The weight is reduced, so the lead frame and the semiconductor device having the lead frame can also be reduced in weight. Furthermore, since the thickness of the heat spreader can be reduced in this way, the heat can be formed by stamping a metal such as a copper bar. Diffusers. According to this stamping process, metal strips can be made to form a majority of thermal diffusers. Furthermore, by laminating the metal strips and metal strips forming inner leads, it becomes a thermal diffuser that can be laminated at the same time. It can shorten the manufacturing time of the lead frame of the present invention compared with the conventional one. In addition, by using the above-mentioned inner lead, the bent portion, The distance between the end portion of the inner lead and the semiconductor element does not increase. Therefore, as shown above, even if the thickness of the heat spreader is reduced, the length of the gold wire for electrically connecting the inner lead and the semiconductor element does not need to be longer. If the semiconductor device according to the present invention has the lead frame as described above, and the outer leads do not protrude from the outer periphery, the inner leads exposed on the peripheral edge portion of the mounting surface form external connection terminals. For this reason, the outer leads and the outer leads protrude from the outer periphery. Compared with semiconductor devices, since the mounting area is smaller, the semiconductor device of the present invention is mounted on the mounting substrate at a high density. Binding book paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 public love) 483139 A7 B7 V. Description of the invention (23) Reference numbers printed on the printed components of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 101, 201, 301, 401, 501, 601, 701, 801, 901, 1001 ... semiconductor devices 102, 202, 302, 402 , 802, 902, 1002 ... Leads 102a, 202a, 302a, 402a, 802a ... Inner bow I line 102b, 202b, 302b, 402b, 802b ... Xi Bu lead 102c, 202c, 302c, 402c, 802c ... flux part 102d, 202d, 302d, 402d, 802d ... standing part 103, 303, 403 ... heat spreader 202f, 802f ... top material plate 104, 203, 304, 304, 404, 803 ... Semiconductor devices 105, 204, 305, 405, 804 ... Gold wires 106, 205, 306, 406, 805 ... Moulding principles 107, 307, 407 ... Double-sided adhesive tapes 108, 308, 408, 602 ... Multi-layer lead frames 109, 409, 806 ... Mounting substrates 110, 410 ... Lead frames 111, 412 ... 4-layer multilayer lead frames 202e, 802e ... Support pads 402b, 802g ... · Bay curved part 407a ... opening 411 with adhesive tape on both sides ... formed steel bar 41 la of heat spreader ... supported member 411 b formed of copper bar ... frame of copper bar This paper applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 26 ——Installation -------- Order i! _ (Please read the precautions on the back before filling this page)
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000156165A JP2001339029A (en) | 2000-05-26 | 2000-05-26 | Multilayered lead frame and semiconductor device using the same |
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| Publication Number | Publication Date |
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| TW483139B true TW483139B (en) | 2002-04-11 |
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| TW090109266A TW483139B (en) | 2000-05-26 | 2001-04-18 | Multilayer lead frame and semiconductor device using same |
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|---|---|
| JP (1) | JP2001339029A (en) |
| KR (1) | KR100732022B1 (en) |
| TW (1) | TW483139B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100621555B1 (en) * | 2004-02-04 | 2006-09-14 | 삼성전자주식회사 | Lead frame, semiconductor chip package and method for the same |
| JP6211956B2 (en) * | 2014-03-10 | 2017-10-11 | エスアイアイ・セミコンダクタ株式会社 | Resin-sealed semiconductor device and manufacturing method thereof |
| JPWO2022209819A1 (en) * | 2021-04-01 | 2022-10-06 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0167292B1 (en) * | 1995-12-15 | 1998-12-15 | 문정환 | Semiconductor multipin package and method of making the same |
| KR0179920B1 (en) * | 1996-05-17 | 1999-03-20 | 문정환 | Method of manufacturing chip-size package |
| KR19980014930A (en) * | 1996-08-17 | 1998-05-25 | 김광호 | Transistor package using lead frame with double layer die pad structure |
| KR100193904B1 (en) * | 1996-10-18 | 1999-06-15 | 윤종용 | Lead frame for lead on chip (LOC) with dummy adhesive and semiconductor chip package using same |
-
2000
- 2000-05-26 JP JP2000156165A patent/JP2001339029A/en active Pending
-
2001
- 2001-04-18 TW TW090109266A patent/TW483139B/en not_active IP Right Cessation
- 2001-04-23 KR KR1020010021721A patent/KR100732022B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR100732022B1 (en) | 2007-06-27 |
| JP2001339029A (en) | 2001-12-07 |
| KR20010107549A (en) | 2001-12-07 |
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