TW480740B - Light-emitting semiconductor device with reflective layer structure and method for making the same - Google Patents

Abstract

The present invention mainly comprises producing a reflective layer on a light-emitting semiconductor stack structure; combining a second substrate on the reflective layer; removing the original substrate of the stack structure by a conventional method and using the second substrate as the substrate for the whole device. Since the reflective layer can effectively reflect all the light emitted from the semiconductor toward the substrate, the illumination efficiency of the surface-emitting type light-emitting semiconductor device can be increased. The present invention also modifies a light-emitting semiconductor device made from an insulative substrate into a vertical electrode structure, thereby effectively reducing the unit area in die production, and making it more convenient for the back end process of a conventional bonding encapsulation.

Description

480740 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (1) Field of the invention: The present invention relates to a light-emitting semiconductor device and a manufacturing method thereof, and particularly to a light-emitting semiconductor device having a reflective layer structure and a manufacturing method thereof. Background of the Invention: The structure of a surface-emitting light-emitting diode traditionally made of a substrate that absorbs light is shown in FIG. An active layer 22 is grown, and then a cladding layer 23 is grown on the active layer, so as to form a dual heterostructure. The light-emitting wavelength of this light-emitting diode is determined by the proportion of components in the active layer. The energy gap of the coating layer is higher than that of the active layer. Therefore, on the one hand, the efficiency of carrier injection can be improved, and on the other hand, the light emitted by the active layer is not. It will be absorbed by the coating layer. Finally, the front metal electrode 24 is plated on the light emitting surface of the light emitting diode, and the back metal electrode 25 is plated on the side of the substrate 20 without the epitaxial layer. This type of vertical light-emitting diode uses gallium arsenide (GaAs), a light-absorbing substrate. This substrate can absorb visible light with a wavelength between 57101111 and 6501111, which reduces the luminous efficiency. Therefore, how to reduce the absorption effect of the light-absorbing substrate is one of the important factors determining its luminous efficiency. In order to improve the shortcomings of absorbing visible light caused by the use of a light-absorbing substrate and increase the luminous efficiency, another structure developed by the conventional technology is shown in FIG. Semiconductor current blocking regions 34 of different doping types are grown on the upper cladding layer 23 together with the cladding layer, so that the area where the current spreads can be increased and the luminous efficiency is improved; further, the light absorbing substrate 20 and the lower cladding layer 21 Add a Bragg reflective layer 33 between them to absorb light (please read the precautions on the back before filling this page) -------- Order -------!

480740 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (2) The light energy incident on the substrate is reflected back in this Bragg reflector 3 3 to improve the luminous efficiency. However, with this conventional structure, one needs to define the area of the current blocking area and use two MOCVD epitaxy, which has the disadvantages of complicated process and long time; and the Bragg reflector is made of two materials with different refractive indexes. It is made by repeatedly overlapping a pair of pairs. The reflection angle bandwidth of this Bragg reflector is determined by the difference of its refractive index. However, it is limited by the refractive index between the two materials. The difference is limited, so it can only reflect the light that is almost perpendicularly incident, and the remaining light is still absorbed by the substrate through this Bragg reflection layer, so its effect of reducing the light absorption by the substrate is extremely limited. As shown in FIG. 3, the conventional technology develops another structure, which is to first grow a light-emitting polar heterostructure 36 on a temporary light-absorbing substrate 20 and maintain a lattice match. After completion, the light-absorbing substrate 20 is removed. Next, another light-transmitting conductive substrate 35 and a light-emitting diode heterostructure 36 are combined using a wafer bonding technology. The light-transmitting conductive substrate 35 can not only Increasing the area where the current spreads out does not absorb light emitted from the active layer, so it can increase its luminous efficiency. In this conventional technique, the technique of “wafer bonding” is used to combine another transparent conductive substrate 35 with a light-emitting diode heterostructure 36. The principle of this technology is to use the coefficient of thermal expansion between different materials. Poorly, the uniaxial pressure is generated by heat treatment, which causes the atom-to-atom van der Waals force to be generated between the light-transmitting conductive substrate 35 and the light-emitting diode heterostructure 36 bonding surface; therefore, in order to achieve a large area Uniformity, it is necessary to generate uniform large-area uniaxial pressure, so not only need to specially design thermal bonding equipment, but also need to maintain light transmission J ----- τ --- i ----------- 1 Order ------- End (i read the note on the back? Matters and then fill out this page)

、 Explanation of the invention (The consumer electronics cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the conductive substrate 35 and the light-emitting diode heterostructure 36 with the same surface lattice direction to obtain a sufficient strength of the bonding force and a low-resistance bonding interface. Therefore, this method is relatively complicated and difficult to manufacture, so it is easy to improve the production yield. Furthermore, the conventional technology uses a gallium nitride series light-emitting diode made of a sapphire (Sapphire) substrate. The substrate is not electrically conductive, so the structure of the lateral electrode must be made as shown in Figure 4. It includes a sapphire insulating substrate 40 on which a buffer layer 41, an n-type lower cladding layer are sequentially grown, and an activation layer. Layer 43, a p-type upper cladding layer 44 and a p-type ohmic contact layer 45, and then the front electrode 46 and the lateral back electrode 47 are made. In addition, the conventional technology also uses silicon carbide (Slllcon Carblde) as gallium nitride Series of light-emitting body (substrate, although silicon carbide can be conductive and can be made into vertical electrodes, but this substrate is not easy to make and the cost is also quite high; therefore, it is mainly made of insulating substrates. A nitride light-emitting diode device. Because the use of an insulating substrate 'cannot be made into a traditional vertical electrode structure, but must be made into a lateral electrode structure', so not only the special wiring mechanism and packaging technology, but also the relative increase in the production area of the die, As a result, the manufacturing process is complicated and the required cost per unit element is also increased. In summary, the conventional technology has the following disadvantages: 1. The complex process that requires two M0CVD epitaxies for the current blocking area, and the Bragg reflective layer can only reflect specific incidents. Corner light. 2 · Wafer thermal bonding technology is complex and difficult to achieve uniform bonding and low-resistance bonding interface. 3 · Sapphire substrate made of gallium nitride series if T ; ----------- I order -------- (Please read the notes on the back of -tt before filling in this page),

480740 A7

V. Description of the invention (4) The photodiode printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs cannot be made into a vertical electrode structure, which increases the unit element cost. Summary of the Invention: An object of the present invention is to overcome the disadvantage of reducing light emission efficiency caused by using a light-absorbing substrate. Another object of the present invention is to provide a manufacturing process that is easy to combine a substrate with a light-emitting semiconductor structure, so as to reduce the complexity and difficulty of the manufacturing process and greatly improve the reflectivity. Another object of the present invention is to simplify the manufacturing process of the current blocking area, so as to overcome the disadvantages of the complicated and long process of the conventional manufacturing process, and to effectively provide the function of dispersing current to improve the luminous efficiency. Another object of the present invention is to provide a process for easily transforming a light-emitting semiconductor device having a lateral electrode structure into a vertical electrode structure, so as to effectively reduce the unit area for die fabrication, and to facilitate the traditional post-package packaging process. A light-emitting sheep conductor device according to the present invention includes a semiconductor stacked structure for generating light in response to the conduction of current; a reflective layer on a major surface of the semiconductor stacked structure for reflecting generated from the stacked structure and The light directed toward the reflective layer; a thick layer 'on the surface of the reflective layer and acting as a substrate; and an electrode structure for applying a current to the semiconductor stack structure. The reflective layer may have at least one region having a lower conductivity than the other portions, and functions as a current blocking region. In addition, according to a method for manufacturing a light-emitting semiconductor device according to the present invention, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 丨, ----- τ-一 --------- --1 Order i = ------- line (please read the precautions on the back before filling this page) 480740 A7 B7 Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. The invention description (including the following steps: formation Forming a lower conductive layer of a first conductivity type on a first substrate; forming an upper coating layer of a second conductivity type adjacent to the lower coating layer; forming an ohmic contact layer on the upper coating layer; forming a A reflective layer is on the ohmic contact layer; a second substrate is bonded to the reflective layer; the first substrate is removed; and an electrode structure that can be respectively connected to the upper cladding layer and the lower cladding layer is made. In the light-emitting semiconductor device of the present invention, the original light-absorbing substrate has been removed in the manufacturing process, so the problem of reducing the light-emitting efficiency caused by the use of the light-absorbing substrate is completely overcome. In addition, the light-emitting semiconductor device according to the present invention has a reflective layer. Can light up half The light emitted from the body in the direction of the substrate is effectively reflected, so the light-emitting efficiency of the surface-emitting light-emitting semiconductor device can be improved. The reflective layer of the present invention may include a single-layer or multi-layer metal structure, and the metal layer can be used as the second substrate and the light-emitting semiconductor. The structure-bound medium can not only solve the conventional < difficulty in direct thermal bonding of the wafer, but also greatly relax the choice of the material of the second substrate. Furthermore, the light-emitting semiconductor device according to the present invention can simultaneously produce current when producing the reflective layer. The barrier region greatly simplifies the manufacturing process of the current barrier region. In addition, the method disclosed in the present invention can be directly applied to making a light-emitting semiconductor device (such as a nitride light-emitting diode) that originally uses an insulating substrate into a light-emitting device having a vertical electrode. The semiconductor device can not only effectively reduce the unit area of die production, facilitate the traditional post-wiring packaging back-end process, but also can be divided in a cleavage manner, which is conducive to the fabrication of laser diode devices. J ----- r — 一 —-------- 1 Order i · ------- End (Please read the precautions on the back before filling this page)

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 Lower coating layer 6 Upper coating layer 8 Metal reflective layer 1 1 Front electrode 480740 A7 B7 _ V. Description of the invention (6) The technical content and characteristics of the present invention can be obtained by The following description of the preferred embodiment is described in more detail with reference to the drawings. Brief description of the drawings: FIG. 1 is a cross-sectional view of a conventional surface-emitting light-emitting diode structure; FIG. 2 is a cross-sectional view of another conventional surface-emitting light-emitting diode structure; Another cross-sectional view of a surface-emitting light-emitting diode structure; FIG. 4 is a cross-sectional view of a surface-emitting light-emitting diode structure made of an insulating substrate; FIG. 5 is a surface-emitting light-emitting diode that implements the present invention Sectional view of the polar structure; Figures 6a-6g are schematic diagrams of the manufacturing process of a surface-emitting light-emitting diode implementing the present invention; Figures 7a-7d are the manufacturing process of another surface-emitting light-emitting diode implementing the present invention 8a-8d are schematic diagrams of a manufacturing process for implementing another surface-emitting light-emitting diode of the present invention; FIGS. 9a-9e are schematic diagrams of a manufacturing process for manufacturing a light-emitting diode using an insulating substrate according to the present invention; l〇a-10c is a schematic diagram of another embodiment of the light-emitting diode manufacturing process using an insulating substrate; the E-type representative symbol. 1 conductive substrate 5 active layer 7 ohmic contact layer 1 〇 back electrode This paper is over-scale China Home Standard (CNS; W size ⑽ x 297 public love) ----- ~ S- — I- ^ ---- τ — --------------- (Please read the back first Please pay attention to this page and fill in this page again) 480740 A7 _B7 V. Description of the invention (7) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economy 20 Light absorbing substrate 21 Lower coating layer 22 Active layer 23 Upper coating layer 24 Front electrode 25 Back electrode 33 Bragg reflection layer 34 Current blocking area 35 Light-transmitting conductive substrate 36 Light-emitting diode heterostructure 4 0 Insulating substrate 41 Buffer layer 42 Under cladding layer 43 Activation layer 44 Over cladding layer 45 Ohm contact layer 4 6 Front electrode 47 Back Electrode 120 Substrate 12 1 Lower coating layer 122 Active layer 123 Upper coating layer 124 Ohmic contact layer 125 Metal reflective layer 126 Conductive substrate 127 Back electrode 128 Front electrode 130 Substrate 131 Lower coating layer 132 Active layer 133 Upper coating layer 134 Ohmic contact layer 135 metal reflective layer 136 conductive substrate 137 back electrode 13 8 front electrode 140 substrate 141 lower coating layer 142 active layer 143 upper coating layer 14 4 ohmic contact layer 145 metal reflection layer 146 conductive substrate 147 back electrode 148 front electrode Pole 150 Insulating substrate 151 Buffer layer 152 Under cladding layer -10-I; ----- Γ ---, --- clothing -------- order i = ------- line (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)

46U / 4U V. Description of the invention (8 153 155 157 159 160 162 164 20 1 167 Active layer ohmic contact layer conductive substrate front electrode insulating substrate lower coating layer coating layer metal reflection layer back electrode preferred embodiment description 154 Coating layer 156 Metal reflective layer 158 Back electrode 200 Metal evaporation pattern 161 Buffer layer 163 Active layer 165 Ohmic contact layer 166 Conductive substrate 168 Front electrode i · ———— Ί! 嗤 (Please read the precautions on the back before filling in this Page) The light-emitting diode manufactured according to the embodiment of the present invention has the following 4 structure: a gold J-flow blocking area is added between the structure and the conductive substrate, and there is no need to double] VIOCV: points: (1) at the light-emitting diode At the same time, the body's double-differential reflection layer also produces electric epitaxy to make the current blocking area, which reduces the complexity and cost of the process. Since the incident J light only penetrates on the surface of the metal material and is then reflected by the dipole, the metal is opposite to the light The angle of incidence is not selectively reflected, so it can increase the bandwidth of the two angles of incidence, more effectively achieve light reflection, and not be easily absorbed by the substrate. (2) Add a metal reflective layer to the light-emitting diode double Between the solid structure and the conductive substrate, since metal and compound semiconductors easily form alloyed bonds, the moon is used as a medium for wafer bonding, which is easier than direct thermal bonding of the wafer to the wafer. (3) Adding a metal reflective layer Between the gallium nitride-based light-emitting diode double heterostructure grown using an insulating substrate and another conductive substrate, the insulating substrate is then used.-11-This paper size applies to China National Standard (CNS) A4 (210 X 297) %) 1 ^ --------. Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs

480740 V. Description of the invention (9) Excluding the gallium nitride light emitting diode which can be made into a vertical electrode structure in this way, it is conducive to the wiring and packaging of the die, and it can reduce the production area of the die, so it can reduce cost. 7F in FIG. 5 is a structure of a surface-emission type light emitting diode according to the present invention. The bottom-up structure is connected to a conductive substrate i (conductive substra⑹), a metal reflection layer 8 and an ohmic contact layer 7. (〇hmic c〇ntact iayer), a cladding layer 6 (acting layer), an active layer 5 (actlve layer), a cladding layer 4 (cladding layer), and finally a front metal electrode n and a back metal electrode 10. In order to make the features, methods, and objectives of the present invention easy to understand, the preferred embodiments are described in detail below. Embodiment 1: Refer to FIG. 6a. In one embodiment of the present invention, the first n-type arsenic A gallium (GaAs) substrate 120 is sequentially epitaxially grown to form a ^ -type aluminum gallium indium phosphorus (AlGalnP) lower cladding layer 121, and an AlGalnP active layer 122 is a conventional composition structure, which may be a single-layer quantum well ( SQW) or multilayer quantum wells (MQW), a P-type AlGalnP cladding layer 123, an ohmic contact layer 124 composed of a P-type indium gallium transition (InGaP) and a P-type GaAs. After the epitaxial growth is completed, some The P-type ohmic contact layer 124 is removed by using an etching technique, and the P-type upper cladding is exposed. Layer 123, as shown in FIG. 6b; next, a metal reflective layer 125 is plated on the P-type ohmic contact layer 124 and the P-type upper cladding layer 123 by using evaporation or base plating technology, as shown in FIG. 6c; Next, the second p-type conductive substrate 126 is thermally bonded to this metal reflective layer 125. After the completion, the first n-type GaAs substrate 120 is removed, as shown in FIG. 6d; This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -I. ^ Τ — --------------- (Please read the precautions on the back before filling (This page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed 480740 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed A7 V. Description of the invention (10) The front metal electrode 128 and the back metal electrode 丨 27 are shown in Figure 6e. The metal reflective layer 125 can form a good ohmic contact with the P-type ohmic contact layer 124, but forms a Schottky contact with the P-type upper cladding layer 123. The metal ohmic contact is conductive The opposite direction can be used as a current diffusion path, because the metal reflective layer 125 The incident angle of light is not selectively reflected, so the reflection angle bandwidth can be increased, so that the light emitted from the active layer K2 can be reflected more effectively. The metal-based contact is relatively poor in conductivity and can be regarded as The current blocking region, but the light emitted from the active layer 122 can also be reflected. Fig. 6f shows the distribution of the input current in the light emitting diode in this embodiment. The added metal reflective layer 125 can effectively spread the current to improve the luminous efficiency.凊 Refer to FIG. 6 g ′, it can be seen how the added metal reflective layer 1 2 5 reflects the light emitted by the active layer without being absorbed by the substrate, so as to improve the luminous efficiency. Second Embodiment: Please refer to FIG. 7 a. In another embodiment of the present invention, a first-type AlGalnP lower cladding layer 13 1 and an AlGalnP active layer 1 are epitaxially grown on the first n-type GaAs substrate 130 in order. The 32 series is a conventional composition structure, which may be a single-layer f-well (SQW) or a multilayer quantum well (MQW), a P-type AlGalnP coating layer 133, and a p-type ohmic contact layer 134. After the epitaxial growth is completed, a metal reflective layer 135 is then plated on the p-type ohmic contact layer 134 by evaporation or coin plating; then as shown in FIG. 7b, a part of the metal reflective layer is 1 3 5 It is removed by an etching technique, and the p-type ohmic contact layer is exposed. 3 4; Next, as shown in FIG. 7 c, the second p-type conductive substrate 136 is thermally bonded. 13-This paper size applies Chinese national standards ( CNS) A4 Specification (210 X 297 Public Love J;; ----------- ^ Order i: ------- (Please read the precautions on the back before filling this page) 480740 Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau I .-----_---- Γ ----------- Order i, ------- MjlpH (Please read the Note 咅? Please fill in this page again} A7 B7 V. Description of the invention (11) After combining with this metal reflective layer 1 3 5, the first n-type GaAs substrate 130 is removed; finally, as shown in Figure 7d Then, the front metal electrode 138 and the back metal electrode 1 3 7 are fabricated. The metal reflective layer 135 can form a good ohmic contact with the P-type ohmic contact layer 134, and the function of the metal ohmic contact is the same as in the embodiment. As described in the above description, the gap between the exposed P-type ohmic contact layer 134 and the second P-type conductive substrate 136 is used as a current blocking area, and the refractive index n (refracti) of the coating layer 133 on AlGalnP 〇I1 index) is about 3.5, and the refractive index n (refraction index) of the gap between the P-type ohmic contact layer 134 and the second p-type conductive substrate 136 is approximately equal to 1, so the emission from the active layer 132 When light enters the gap between the p-type ohmic contact layer 134 and the second p-type conductive substrate 136, the light is from a dense medium to a sparse medium, so this gap can also reflect light back. Current distribution in this embodiment The reflection of the light emitted from the active layer is the same as that of the first embodiment. Third embodiment: Please refer to FIG. 8a. In this embodiment, the first n-type GaAs substrate 140 is sequentially epitaxially grown into a ^ -type. AlGalnP lower cladding layer 141, an AlGalnP active layer 142 is a conventional composition structure, which may be a single-layer quantum well (SQW) or multi-layer quantum well (MQW), a P-type AlGalnP upper cladding layer 143, a P Ohmic contact layer 144. After epitaxial growth is completed, A metal reflective layer i 4 5 is plated on the second p-type conductive substrate 146, and a part of the metal reflective layer 145 is removed to expose the second p-type conductive substrate 146, as shown in FIG. 8b; Come down by thermal method -14-This paper size applies Chinese National Standard (CNS) A4 specification (21G X 297 mm) '—-—- 480740 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ______B7____ 5. Description of the invention (12) Combine this metal reflective layer 145 with the ohmic contact layer 144, and after the completion, remove the first n-type GaAs substrate 140, as shown in FIG. 8c; finally, make the front metal electrode 148 and the back metal electrode 147 , As shown in Figure 8d. The metal reflective layer 145 can form a good ohmic contact with the P-type ohmic contact layer 144. The metal ohmic contact and the gap between the exposed second P-type conductive substrate 146 and the ohmic contact layer 144 The function is the same as that described in the second embodiment. The current distribution and reflection of light emitted from the active layer in this embodiment are the same as those in the first embodiment. Embodiment 4: Please refer to FIG. 9 a. In this embodiment, an n-type gallium nitride (GaN) buffer layer 151 and an n-type aluminum gallium nitride are sequentially grown on the first sapphire insulating substrate 150. (AlGaN) lower cladding layer 152, a gallium gallium nitride (inGaN) active layer 153 is a conventional composition structure, which may be a single-layer quantum well (SqW) or a multilayer quantum well (MQW), a P-type nitrogen An overcoat layer 154 of aluminum gallium (AlGaN) and an ohmic contact layer 155 of p-type gallium nitride (GaN). After the epitaxial growth is completed, a part of the P-type ohmic contact layer 155 is fabricated with a mask etching technique to produce a metal evaporation pattern 200, as shown in FIG. 9b. Next, a metal reflection layer 156 is plated on the metal evaporation pattern 200 of the P-type ohmic contact layer 155 by using a vapor deposition or sputtering technique, as shown in FIG. 9c. Next, the second p-type conductive substrate 157 is thermally bonded to this metal reflective layer 156. After completion, the first sapphire insulating substrate 150 is removed, as shown in FIG. 9d. Finally, the front metal electrode 159 and the back metal electrode 158 are fabricated, so that a gallium nitride-based light emitting diode with a vertical electrode can be fabricated, as shown in FIG. 9e. -15-This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm)-(Please read the note on the back? Matters before filling out this page) --------- Order-- -------. 480740 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ______Bl V. Description of the invention (13) The metal reflective layer 156 can form a good ohmic contact with the P-type ohmic contact layer 155 (Ohmic contact ), The functions of the metal ohmic contact 155 and the gaps exposed between the second P-type conductive substrate 157 and the ohmic contact layer 155 are the same as described in the second embodiment. The current distribution and the reflection of light emitted from the active layer in this embodiment are the same as those in the first embodiment. Embodiment 5: Please refer to FIG. 10A. In this embodiment, an n-type GaN buffer layer 161 and an n-type AlGaN lower cladding layer 162 are sequentially grown on the first sapphire insulating substrate 160. An InGaN active layer 163 is a conventional composition structure, which may be a single-layer quantum well (SQW) or a multilayer quantum well (MQW), a P-type AlGaN cladding layer 164, and a P-type GaN ohmic contact layer 165. . After the epitaxial growth is completed, a metal reflective layer 201 is patterned on the second p-type conductive substrate 166 by evaporation or sputtering. Next, the metal reflective layer is thermally bonded. 1 is combined with the ohmic contact layer 165, as shown in Fig. 1 Ob. After completion, remove the first sapphire insulating substrate 1 60, and then fabricate the front metal electrode 168 and the back metal electrode 167, so that a gallium nitride-based light emitting diode with a vertical electrode can be fabricated, as shown in FIG. 10c. Show. The metal reflective layer 201 can form a good ohmic contact with the P-type ohmic contact layer 165. The metal ohmic contact and the gap between the exposed second P-type conductive substrate 166 and the ohmic contact layer 165 The function is the same as that described in the fourth embodiment. Current distribution of this example and reflection of light emitted from the active layer -16-This paper size applies the Chinese National Standard (CNS) A4 specification (21 × X 297 mm) I >-----_-; -------- Order i = ------- End (Please read the precautions on the back before filling this page) A7

480740 V. Description of the invention (14) Same as the first embodiment. The reflective layer in the embodiment of the present invention may be a single-layer structure such as titanium (Ti), aluminum (A1), or gold (Au), or gold / germanium (Au / Ge), titanium / aluminum (Ti / Ai), or nickel. / Gold (Ni / Au) and other multilayer structures. The material of the second substrate in the embodiment of the present invention may be a compound semiconductor of any composition such as germanium (Ge), silicon (Si), gallium phosphide (GaP), gadolinium phosphide (Inp), or indium oxide. Conductive oxides such as tin (IT0) and zinc oxide (Zn〇). The light emitting semiconductor device according to another embodiment of the present invention may not include an activation layer 'but emit light through an interface between the upper cladding layer and the lower cladding layer. The composition of the current blocking region in other embodiments of the present invention may be an insulating oxide or an insulating nitride. The electrode structure in different embodiments of the present invention can also be made into a lateral electrode structure according to need. The features and technical contents of the present invention have been fully disclosed as above. Any person skilled in the art can make various substitutions or modifications without departing from the spirit of the present invention in accordance with the disclosure and teachings of the present invention. Therefore, the protection scope of the present invention should not be limited to The disclosed embodiments should cover these substitutions and modifications. -I .---- ^ ----: ---------- Order · .I ------- (Please read the notes on the back before filling out this page) Ministry of Economy Wisdom The paper size printed by the Employees' Cooperative of the Property Bureau applies the Chinese National Standard (CNS) A4 mm__

Claims (1)

ABCD Patent application No. 88117814 Chinese amendment to the scope of patent application (January 91) 6. Scope of patent application 1. A light-emitting semiconductor device including a semiconductor stack structure for generating light in response to the conduction of current; a reflective layer, Located on one of the major surfaces of the semiconductor stack structure to reflect light generated from the stack structure and directed to the reflective layer; a thick layer located on the surface of the reflective layer and serving as a substrate; and an electrode structure for To apply a current to the semiconductor stack structure. 2. The device according to item 1 of the scope of patent application, wherein the reflective layer has at least one region having a lower conductivity than the other portions, and functions as a current blocking region. 3. The device according to item 2 of the patent application range, wherein the current blocking region may be an insulating oxide, an insulating nitride, air, or a Schottky contact region. 4. The device according to item 1 or 2 of the scope of patent application, wherein the reflective layer may be a single-layer structure such as Ti (Ti), aluminum (A1) or gold (Au), or gold / germanium (Au / Ge), titanium / Aluminum (Ti / Al) or nickel / gold (Ni / Au) multilayer structure. 5. The device according to item 1 or 2 of the patent application scope, wherein the semiconductor stack structure includes: a lower cladding layer, which is doped with a first conductivity type impurity; an upper cladding layer, the upper cladding A second conductive type impurity is doped in the layer and is adjacent to the lower cladding layer; and an ohmic contact layer is formed on the upper cladding layer. 6. The device as claimed in claim 5, wherein the semiconductor stack structure further includes: an active layer bounded between the lower cladding layer and the upper cladding layer. 7. For the device in the scope of application for patent item 5, wherein the lower coating layer is a n 480740 A type of gallium indium phosphorus (AlGalnP) semiconductor layer, and the upper cladding layer is a P type of aluminum gallium indium phosphorus (AlGalnP) semiconductor layer. 8- The device according to item 5 of the application, wherein the lower cladding layer is an n-type gallium nitride dish-V compound semiconductor layer, and the upper cladding layer is a p-type gallium nitride mv group Compound semiconductor layer. 9. The device according to item 1 or 2 of the scope of patent application, wherein the material of the thick layer may be a compound of any composition such as germanium (Ge), silicon (Si) or gallium phosphide (GaP), indium phosphide (Inp), etc. The semiconductor may also be a conductive oxide such as indium tin oxide (IT0) or zinc oxide (ZηΟ). For example, the device of claim 1 or 2, wherein the electrode structure includes two electrodes on the surface of the thick layer and the other surface of the stacked structure opposite to the main surface. 11. A method for manufacturing a light-emitting semiconductor device, comprising the following steps: forming a lower conductive layer of a first conductivity type on a first substrate; forming an upper coating layer of a second conductivity type adjacent to the lower coating layer; forming An ohmic contact layer on the upper cladding layer; forming a reflective layer on the ohmic contact layer; bonding a second substrate to the reflective layer; removing the first substrate; and making it respectively conductive to the The electrode structure of the upper cladding layer and the lower cladding layer. 12. The method according to item 11 of the scope of patent application, wherein a buffer layer of a first conductivity type has been formed on the first substrate before forming the lower cladding layer, and the lower cladding layer is formed on the buffer Layer above. 1 3 · The method according to item 12 in the scope of patent application, wherein the lower coating layer is η. The paper size is applicable to the Chinese National Standard (cns) A4 specification (21〇χ 公 董) 480740 A8 B8 C8 D8 The patent application type gallium nitride Π-V compound semiconductor layer, and the upper cladding layer is a P-type gallium nitride melon-V compound semiconductor layer. 14 · The method according to item 11 or 12 of the scope of patent application, wherein before forming the upper cladding layer, it further comprises the step of forming an active layer on the lower cladding layer so that the active layer is bounded on the Between the lower cladding layer and the upper cladding layer. 15 · The method according to item 11 or i 2 of the scope of patent application, wherein the reflective layer has at least one region having a lower conductivity than the other portions and functions as a current blocking region. 16. The method according to item 5 of the patent application scope, wherein the current blocking region may be an insulating oxide, an insulating nitride, air, or a Schottky contact region. 17 · The method according to item 11 or 2 of the scope of patent application, wherein the reflective layer may be a single-layer structure such as Ti (Ti), aluminum (A1), or gold (Au), or gold / germanium (Au / Ge ), Titanium / aluminum (Ti / Al) or nickel / gold (Ni / Au) and other multilayer structures. 18 · The method according to item 丨 丨 in the patent application range, wherein the lower cladding layer is an n-type gallium indium phosphorus (AlGalnP) semiconductor layer, and the upper cladding layer is a p-type aluminum gallium indium phosphorus (AlGalnP) semiconductor layer. 1 9 · If the method of the scope of application for patent No. 丨 丨 or 丨 2, the material of the second substrate may be germanium (Ge), silicon (Si) or gallium phosphide (GaP), indium phosphide (InP), etc. Compound semiconductors of any composition can also be conductive oxides such as indium tin oxide (ITO), zinc oxide (Zn0), and the like. 20. The method according to item 11 of the scope of patent application, wherein the electrode structure includes two electrodes on the surface of the second substrate and the lower cladding layer, respectively. 21. The method according to item 2 of the scope of patent application, wherein the electrode structure includes two paper sizes applicable to China National Standard (CNS) A4 (210X297) Binding 480740 8 8 8 8 A B c D Patent application scope Each electrode is located on the surface of the second substrate and the buffer layer -4- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)