480574 五、發明說明（1) 發明之領域 本發明提供一種清洗化學氣相沉積（c h e m i c a 1 v a p,o r d e p o s i t i ο n，C V D)機台之反應室（c h a m b e r )及其内元件的 方法，尤指一種清洗一電漿加強化學氣相沉積（p 1 asma enhanced chemical vapor deposition, PECVD)機台或一 低壓化學氣相沉積（sub-atmospheric chemical vapor deposit ion, SAC VD)機台之反應室及其内部元件的方法。 背景說明 化學氣相沉積（chemical vapor deposition，CVD)是 利用化學反應的方式，在反應器内將反應物生成固態生成 物，並沉積在晶片表面的一種薄膜沉積技術。經過數十年 的發展，化學氣相沉積已經成為目前的半導體製程中，是 最基本也是最重要的技術之一。舉凡所有半導體元件所需 要的薄膜，不論是導體、半導體或是介電材料 (d i e 1 e c t r i c s )，皆可以藉化學氣相沉積進行配製。因為 化學氣相沉積是藉反應氣體間的化學反應以生成所需的薄 膜，故其產物的結晶性.與理想配比皆較優於使用濺鍍法所 生成的薄膜。 目前業界所慣用由AMAT所製造的CVD機台，係採用氟 化氮（N F 3)作為該機台的清洗氣體。但是由於近年來氣化480574 V. Description of the invention (1) Field of the invention The present invention provides a method for cleaning the chamber and its components of a chemical vapor deposition (chemica 1 vap, ordepositi n, CVD) machine, especially a method for cleaning. The reaction chamber of a p 1 asma enhanced chemical vapor deposition (PECVD) machine or a sub-atmospheric chemical vapor deposit ion (SAC VD) machine and its internal components. method. Background Description Chemical vapor deposition (CVD) is a thin film deposition technology that uses chemical reactions to form reactants into solid products in a reactor and deposit them on the wafer surface. After decades of development, chemical vapor deposition has become one of the most basic and important technologies in the current semiconductor manufacturing process. For example, all films required for semiconductor devices, whether they are conductors, semiconductors, or dielectric materials (d i e 1 e c t r i c s), can be prepared by chemical vapor deposition. Because chemical vapor deposition uses the chemical reaction between reaction gases to form the required film, the crystallinity of the product and the ideal ratio are better than those produced by the sputtering method. At present, the CVD machine manufactured by AMAT, which is commonly used in the industry, uses nitrogen fluoride (N F 3) as the cleaning gas of the machine. But due to gasification in recent years
第6頁 480574 五、發明說明（2) 氮的全球性缺貨，因此各製造廠被迫改採四氟化碳 (carbon tetrafluoride，CF 4)及六氟乙燒（perfluoro ethane，C2F6)作為清洗氣體。然而如此一來，CVD機台反 應室内之力口熱器（heater)以及其他製程物件（process k i t)等元件的表面將沉積一層灰黑色的殘餘物 (coating)。隨著使用次數及進料片數的增加，加熱器表 面的殘餘物將日益趨厚，致使CVD機台測機時的壓^ 、 (stress)誤差增加，且該CVD機台所生成之薄膜其尸 (thickness )與表面一致性（uni f〇rmity》^將受到^ g。 面對此 問題，雖可經由調整機台或製 償，但來必須投入大量人力與時間進；2作為補 相對地α成機台停機時間的增加。況且 队I工作， 定程度，以致無法經由調整機台或製程來沉積到一 ，半導，方必須更換全新的加解；：ί補償時， 疋贫目則:支加熱器價格超過新台幣100萬元/1題。但 =2签ί常—部eVD機台每次需更換六支全靳Ξ為美金 益 需更換六次。換句話說，為解決、、加熱 的問ϊ即I部cvd機台每年需多支出超過新台物沉積 2外 '、即使ί，15()萬元，造成半導體廠商極大的Γί 此=y史在更換全新的加熱器過後，由於此/負擔。 ，ΐ t ΐ盡半導體廒方仍然必須調配人力進行ί ΐ物仍將 貫在疋生產上的一大困擾。 日韦測機，Page 6 480574 V. Description of the invention (2) Global shortage of nitrogen, so manufacturers are forced to switch to carbon tetrafluoride (CF 4) and perfluoro ethane (C2F6) for cleaning gas. However, as a result, a gray-black coating will be deposited on the surface of components such as heaters and other process objects in the CVD machine reaction chamber. With the increase of the number of uses and the number of feeding pieces, the residue on the surface of the heater will become increasingly thicker, resulting in an increase in the pressure error (stress) of the CVD machine testing machine, and the thin film generated by the CVD machine (thickness) and surface consistency (uni f0rmity) ^ will be subject to ^ g. Although this problem can be adjusted by adjusting the machine or compensation, it must be invested a lot of manpower and time; 2 as a complement to the α Increased machine downtime. Moreover, team I works to a certain extent so that it cannot be deposited into one or more semi-conductors through adjustment of the machine or process, and must be replaced with a completely new solution. The price of a heater exceeds NT $ 1 million per question. However, = 2 sign. Regular-Ministry eVD machines need to be replaced six times each time. Jin Jin is replaced six times for US dollars. In other words, in order to solve, The problem of heating is that the cvd machine of Part I needs to spend more than two deposits of new materials every year, even if it is 1,500,000 yuan, which causes a great deal for semiconductor manufacturers. This = y After the replacement of a new heater, due to the This / burden. Ϊ́ t ΐ ΐ semiconductor companies must still deploy people Be consistent ί ΐ was still a big problem. WEI Cloth measuring machines on the production,
480574 五、發明說明（3) 發明概述 因此本發明之主要目的在於提供一種清洗化學氣相，沉 積（chemical vapor deposition, CVD)機台之反應室及其 内元件的方法，以解決上述殘餘物沉積的問題。 在本發明的最佳實施例中，一 CVD機台之反應室 (chamber)包含有一加熱器（heater)以及其他之製程物件 (process kit)。本發明清洗方法是先通入四氟化碳（CF 4) 以及六氟乙烷（C 2F 6)氣體於該反應室内，接著在對該反應 室内之元件表面進行一喷砂或研磨處理後，將該元件浸泡 於一至少包含有氨水（ammonia water, ΝΗ40Η)與過氧化氫 (hydrogen peroxide， Η 2〇 2)，溫度約維持在攝氏40度至攝 氏7 0度（4 0°C至7 0°C )之間的清洗溶液中。最後將該清洗溶 液升溫，使該加熱器以及該製程物件上之殘餘物溶解或脫 落，以達到清潔的目的。 由於本發明之清洗方法可以將沉積於加熱器表面的殘 餘物完全去除，因此半導體廠方無需投入大量人力與時間 進行調整工作，進而減少了機台停機的時間。更重要的 是，本發明之清洗方法可以大幅降低工廠開銷，進而提昇 產品競爭力。 發明之詳細說明 ，480574 V. Description of the invention (3) Summary of the invention Therefore, the main object of the present invention is to provide a method for cleaning the reaction chamber and its internal components of a chemical vapor deposition (CVD) machine to solve the above-mentioned residue deposition. The problem. In the preferred embodiment of the present invention, the chamber of a CVD machine includes a heater and other process kits. In the cleaning method of the present invention, carbon tetrafluoride (CF 4) and hexafluoroethane (C 2F 6) gases are first introduced into the reaction chamber, and then the surface of the components in the reaction chamber is subjected to sandblasting or grinding treatment. The device is immersed in a device containing at least ammonia water (NΗ40Η) and hydrogen peroxide (Η202), and the temperature is maintained at about 40 ° C to 70 ° C (40 ° C to 70 ° C). ° C) in a cleaning solution. Finally, the cleaning solution is heated to dissolve or remove residues on the heater and the process object to achieve the purpose of cleaning. Since the cleaning method of the present invention can completely remove the residues deposited on the surface of the heater, the semiconductor factory does not need to invest a lot of manpower and time for adjustment work, thereby reducing the machine downtime. More importantly, the cleaning method of the present invention can greatly reduce factory overhead, thereby improving product competitiveness. Detailed description of the invention,
480574 五、發明說明（4) 一化學氣相沉積（chemical vapor deposition，CVD) 機台包含有一反應室及該反應室内部之其他製程物件、而 通常該CVD機台係為一電漿加強化學氣相沉積（plasma enhanced chemical vapor deposition, PECVD)機台或一 低壓化學氣相沉積（sub-atmospheric chemical vapor deposition， SACVD)機台。 本發明所提供之清洗方法，係先通入四氟化碳（CF 〇 以及六氟乙烷（C疋Ο氣體於該反應室内，接著在對該反應 室内之7L件表面進行一噴砂或研磨處理後，將該元件浸泡 於一至少包含有比例約為14%至4〇%之氨水（amffl〇nia water, ΝΗ40Η)與比例約為 5〇%至 67%之過 peroxide, H 20 2)，溫度約维拄^ 5 7ίΤΓ k門的、主、*隹持在攝氏4〇度至攝氏70度（40 L至Hi L )之間的清洗溶液中。昙 你兮^敘哭L7 »兮制：k中 取後將4清洗溶液升溫， 使泫加…以及孩1耘物件上之 到清潔的目的。 合鮮忒脫洛，以達 η π虱鼠酸與著 其溫度亦約維持在損 之比例 4 0度至 此外，該清洗溶液亦 約為1 : 1至3 : 1之溶液替代 攝氏7 0度（4 0°C至7 0°C )之 480574 五、發明說明（5) 因此半導體廠方無需投入大量人力與時間進行調整工作， 進而減少了機台停機的時間。更重要的是，本發明之清洗 方法得以針對每一 CVD機台，省下超過新台幣4 0 0 0萬元？ 亦即美金約1 5 0萬元的加熱器更換費用，大幅降低工廢開 鎖，進而提昇產品競爭力。 以上所述僅本發明之較佳實施例，凡依本發明申請專 利範圍所做之均等變化與修飾，皆應屬本發明專利之涵蓋 範圍。480574 V. Description of the invention (4) A chemical vapor deposition (CVD) machine includes a reaction chamber and other process objects inside the reaction chamber, and usually the CVD machine is a plasma-enhanced chemical gas Phase enhanced chemical vapor deposition (PECVD) machine or a sub-atmospheric chemical vapor deposition (SACVD) machine. In the cleaning method provided by the present invention, carbon tetrafluoride (CF 0 and hexafluoroethane (C 疋 O) gas is first passed into the reaction chamber, and then a sandblasting or grinding treatment is performed on the surface of the 7L piece in the reaction chamber. After that, the element is immersed in an aqueous solution containing at least about 14% to 40% amfflonia water (NΗ40Η) and about 50% to 67% peroxide, H 20 2).拄 维 拄 ^ 5 7ίΤΓ k-gate, master, and * held in a cleaning solution between 40 degrees Celsius to 70 degrees Celsius (40 L to Hi L). 昙 你 ^^^ L7 »Manufacture: k After picking up, the temperature of the 4 cleaning solution is raised, so as to increase the cleaning effect on the objects ... and the freshness of the product, so that the temperature of the η π lice acid and the temperature is maintained at about 4 0 ° C to In addition, the cleaning solution is also about 1: 1 to 3: 1 instead of 480574 at 70 ° C (40 ° C to 70 ° C). 5. Description of the invention (5) Therefore, the semiconductor manufacturer does not need A large amount of manpower and time are invested for adjustment work, thereby reducing the machine downtime. More importantly, the cleaning method of the present invention enables For each CVD machine, saving more than NT $ 400 million? That is, the heater replacement cost of about US $ 15 million, which greatly reduces the unlocking of industrial waste, thereby improving product competitiveness. In the preferred embodiment of the present invention, any equivalent changes and modifications made in accordance with the scope of the patent application of the present invention shall fall within the scope of the patent of the present invention.
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