TW479358B - Device and method for performing resetting and reading in CMOS sensor - Google Patents
Device and method for performing resetting and reading in CMOS sensor Download PDFInfo
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/本發明係有關於一種在互補金氧半導體感測器中同時 執行歸零及讀取的裝置與方法,特別是有關於在互補金氧 半導體線性感測器中的裝置與方法;此互補金氧半導體線 性感測器中沒有如移動域(s h i f t r e g i s t e r )的儲存模組、可 供讀取時利用。。 V] 5 - 2發明背景: 固態攝像元件(image sensor)基本上分成兩類·電^ 偶合元件(charged coupled device)及金氧半導體_ 荷 陣列(MOS diode array)。兩者皆需要特別的製作:,體 配合其影像感測目的;兩者也皆需基本的外在 乂轾以 感測晶片以驅動陣列及處理輸出訊號。因此,一 6連接至 測從屬系統需要從元件與其伴隨、牽連丄二完整的感 消耗及實體尺寸作整體的考量。 町回成本、電力 傳統上,作為掃描器的固態攝像元 。但不幸的是’對於發展攜帶式掃描琴而土電荷偶合元件 件的技術無法與檫準直流電處理相容。,電荷偶合元 件需要高伏特計時訊號(clock signan ,電荷偶合元 要較高的電力消耗。因此,將標準Vi)補:種f求隱含需 補金虱半導體製程 線性二極體感測器通常是一維列的光二極體,由金氧 半導體電晶體的源極及汲極以反偏壓(reverse —bias)半導 體連接的型態來執行。應用一高反偏壓使二極體被電性上 隔離後’暴露在被偵測的光線或其他輻射線之下。入射輻 479358 五、發明說明(2) 應用到掃描器上,可提升整合性及降低電力消耗。 射線可增加反偏壓漏電流至二極體中,此漏電流能有效地 被併入到隔離連接的反偏壓電容上,造成反偏壓電位的降 低。如此為人所知且利用的技術可將輻射能轉為電子電荷 及電位、,,別是也可以使用在線性二極體型態感測器。在 這些感f裔中’單一的金氧半導體電晶體控制光二極體的 通路了寫入像素胞(Cell)(也就是歸零至高反偏壓 )及:*接二極體至一位元線(bit — 1 ine)及從位元線連 接,私:1'則電路將之讀取的目的;此電荷感測電路可將 儲存於aa胞的電荷轉變為輸出電壓。 r =本〗上線性感測器與陣列感測器相同,藉由-掃 〔scan 丄 ine )作 處理形式藉由一字"τ ,將之以連續的像素讀取。這 連續的像素讀取^線(word line)使一列的像素胞 閘極共同連接至i、ί謂的字元線是將一列中所有像素 動字元線訊號的^ ^路電晶體。數位電路是用來產生 register)的^要圖案,且—般會採取移動域( 胞會被連接至^二當字元線發生作用時,一列上的 綠’藉此再連接至感測器頂部的表The present invention relates to a device and method for performing zero reset and reading simultaneously in a complementary metal-oxide-semiconductor sensor, in particular to a device and method in a complementary metal-oxide-semiconductor line sensor; the complementary metal There is no storage module such as a shift register in the oxygen semiconductor linear sensor, and it is available for reading. . V] 5-2 Background of the Invention: Solid-state imaging devices (image sensors) are basically divided into two types: electrically coupled devices (charged coupled devices) and metal-oxide-semiconductor (MOS) diode arrays. Both of them need special production: to match their image sensing purpose; both also need basic externality to sense the chip to drive the array and process the output signal. Therefore, a 6-to-slave slave system needs to consider the components and their companions, the overall sensory consumption and the physical size. Machaki cost, electricity Traditionally, solid-state imaging elements have been used as scanners. But unfortunately, for the development of the portable scanning piano, the technology of the soil charge coupling element is not compatible with the quasi-DC process. The charge coupling element requires a high-volt clock signan. The charge coupling element requires a higher power consumption. Therefore, the standard Vi) is supplemented: the type of f is implicitly needed to compensate for the gold lice semiconductor process. Linear diode sensors are usually used. It is a one-dimensional array of photodiodes. The source and drain of the metal-oxide semiconductor transistor are implemented in a reverse-bias semiconductor connection. After applying a high reverse bias to the diode to be electrically isolated, it is exposed to the detected light or other radiation. Incident radiation 479358 V. Description of the invention (2) Application to the scanner can improve integration and reduce power consumption. The ray can increase the reverse bias leakage current to the diode, and this leakage current can be effectively incorporated into the isolated reverse bias capacitor, causing a decrease in the reverse bias potential. Such a well-known and utilized technology can convert radiant energy into electronic charges and electric potentials. In addition, it can also be used in linear diode type sensors. In these senses, the 'single metal oxide semiconductor transistor controls the path of the photodiode to write the pixel cell (that is, return to zero to a high reverse bias) and: * Connect the diode to a bit line (Bit — 1 ine) and connected from the bit line, private: 1 'is the purpose of the circuit to read it; this charge sensing circuit can convert the charge stored in the aa cell into an output voltage. r = This line sensor is the same as the array sensor, and it is read in continuous pixels by -scan [scan 丄 ine] as the processing form. This continuous pixel read line (word line) makes a column of pixel cells gates connected in common to the word line, which is a circuit that connects all the pixels in a column to the word line. The digital circuit is used to generate the main pattern of the register, and generally takes the mobile field (the cell will be connected to the second). When the word line is activated, the green 'on a column will be connected to the top of the sensor. The table
479358 五、發明說明(3) 路上。再者,數位電路可產生作動訊號,此作動訊號控制 類比開關或感測器電路,使訊號能在連續的位元線上傳遞 輸出。 如第一圖所不為一以被動像素胞110為基本的主動感 測器之一列。每一個被動像素胞11 0都有一個簡單的結構 t括光二極體PD與其相配合的電容Cd及一電晶體開關MR。 ^些光二極體經過位於像素胞内之開關MR1、MR2…MRx與 大匯排120(column bus)相連接;列匯排120與一電荷放479358 V. Description of invention (3) On the road. Furthermore, the digital circuit can generate an actuation signal. This actuation signal controls an analog switch or sensor circuit, so that the signal can be transmitted and output on continuous bit lines. As shown in the first figure, it is not a list of active sensors based on the passive pixel cell 110. Each passive pixel cell 110 has a simple structure, including a photodiode PD and a capacitor Cd and a transistor switch MR which are matched with it. ^ Some photodiodes are connected to a column bus 120 (column bus) via switches MR1, MR2 ... MRx located in the pixel cell; the column bus 120 and a charge discharge
隹=相連接,並提供一訊號電位Vo顯示一光二極體pd所收 集的照光準位(level of illuminati(H〇。 W於互補式金氧半 則會‘ ί K:2成本;另-方面,沒有移動·,掃描器 。根據上述的加成時間,而造成不佳的效益 描器上應用的問題兼價及效益來解決cm〇s感測器在掃 5 一 3發明目的及 概述:隹 = connected, and provides a signal potential Vo to display the level of illuminati (H. W. Complementary Metal Oxygen Seminar) collected by a photodiode pd. K: 2 cost; another-aspect Scanner. There is no movement. Scanner. According to the above-mentioned addition time, the problems caused by the poor benefit of the application on the scanner and the cost and benefit are resolved to the cm0s sensor in the scan. 5-3 The purpose and summary of the invention:
體感測 氧半導 ;此互 器所產背景中’傳統的互補金氧」 體感測器本發明主要提供-在心 冋π執仃像素曝光及讀取資料的^Body sensing oxygen semiconducting; in the background produced by this instrument ‘traditional complementary metal oxide’ body sensor The present invention mainly provides-performing pixel exposure and reading data at the heart
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發明說明(4) f氧半導體感測器並沒有如類比^ 件可供資料暫存。 動域及移動域的言 1)^ 本發明的另一目的在於提供一掃 曝光及讀取資料的步驟;此掃瞒器的同時執行像素 零時間不同,但有相同的曝光時間。個感光胞的開始歸 根據以上所 氧半導體感測器 有複數個感光胞 述之目的,本發 中同時進行歸零 (photoce 1 1 )且 開關元件及一第二開關元件有作 感光胞至第二開 第二開關元件位 開關元件位於從 bypass)上,及 common bus)的通路上。在一掃 體感測器中同時 明提供了 與讀取步 至少包括 用的作用 關元件通 於感光胞 瞄器之線 步驟的方 一在線性互補金 驟的裝置,其中 一同時使一第一 電路,其中第一 路的一 至一共 性互補 法至少 在一列中複數個 排的通路由一相 路由一相對應的 感光胞之第一開 進行歸零與讀取 感光胞,每個感光胞有一連接至 對應的第一開關元件’且有 /第二開關元件 關元件及第二感 元件’且 所控制。 光胞之苐 用 第二感光胞位於第一感光胞之下 個 並有同 一開關 鄰近位 旁路( 同匯排( 金氧半導 包括提供 一共同匯 路的一旁 時使第一 元件有作 置。 5 - 4發明詳細說明Description of the Invention (4) f oxygen semiconductor sensors are not available for temporary storage as analogy. Dynamic domain and mobile domain language 1) ^ Another object of the present invention is to provide the steps of scanning and exposing data; the simultaneous execution of this concealer has different pixel zero time, but has the same exposure time. The beginning of each photoreceptor cell is based on the purpose described above for the oxygen semiconductor sensor. There are multiple photoreceptor cells in the present invention. At the same time, zeroing is performed (photoce 1 1). The second open second switching element is located on the path from the bypass) and the common bus). In a body scanning sensor, a device that is linearly complementary to the reading step including at least the functional element that passes through the line of the photoreceptor is provided. One of them simultaneously enables a first circuit. Among them, the one-to-one common complementary method of the first path has at least one row of a plurality of rows of paths. One phase is routed to the first opening of a corresponding photoreceptor cell for zeroing and reading the photoreceptor cell, and each photoreceptor cell has a connection to The corresponding first switching element 'and // the second switching element off element and the second sensing element' are also controlled. The photocell cell uses a second photocell that is located below the first photocell and has the same switch adjacent to the bypass (same busbar (the metal oxide semiconductor includes a side that provides a common sink) to make the first element active 5-4 Detailed Description of the Invention
第8頁 479358 五、發明說明(5) 本發明的一些實施例會詳細描述如下。然而,除了詳 細描述外,本發明還可以廣泛地在其他的實施例施行,且 本發明的範圍不受限定,其以之後的專利範圍為準。 本發明之掃描器的不同部分並沒有依照尺寸繪圖。某 $尺度與其他相關尺度相比已經被誇張,以提供更清楚的 私述和本發明的理解。另外,雖然在此所畫的實施例是以 具有寬度與深度在不同階段的二維中顯示,應該很清楚地 瞭解到所顯示的區域只是掃描器的一部份,其中可能包含 許多在三維空間中排列的元件。相對地,在製造實際的元 件時’圖示的區域具有三維的長度,寬度與高度。 本發 體感測器 複數個感 數個第一 與一 至感 同 開關 光胞 導體 有相 胞, 電壓 光胞 時使 元件 之下 感測 同曝 每個 明主要 中同時 光胞在 開關元 供應電 的一第 第一感 有作用 一個鄰 的目的 進行歸 線性互 件位於 路相連 二通路 光胞之 的作用 近位置 複數個 在於提供 零與讀 補金氧 連接至 接、複數個第 上,且與一共 在一線性互補金氧半導 取步驟的裝置,其 半導體感測器的一 感光胞的一第一通 至少包括 列中、複 路上,且 位於連接 連接,及 胞之第二 於第一感 補金氧半 時間、但 數個感光 一相對應 關元件 匯排相 二感光 光胞位 線性互 零開始 列中複 通路由 二開 同的 第一開關元件及第 其中第二感 一掃瞄器之 電路, 。而在 感光胞 器中, 光周期 感光胞有一連接至 具有不同歸 的方法至少包括提供在一 共同匯排的 479358 五、發明說明(6) 〜---- 的第一開關元件,且有一通路的一旁路由一相 二開關元件所控制;其次同時使第一感光胞之二' 件及第二感光胞之第二開關元件有作用,第-二: 5‘ 乐—感先胞位於 主第一感光胞之下一個鄰近位置。 本發明實施例將參照附加的圖示加以說明,如第二圖 所示為根據本發明可應用在掃瞄器中的像素感測器的^光 胞示意圖。每一個線性感測器的感光胞包括—光二極^ Μ 、一開關SW、一偏壓開關B-SW及一像素選擇線ps。所有的 感光胞會共同接至一匯排(bus)20,在連接至外部控制電 路(圖上未示)。每個光二極體pD(x一1 )、PD(x)、> •••都有其相對應的開關SW(x-l)、SW(x)、SW(X+1)···、偏 壓開關 B-SW(x-1)、B-SW(x)、B-SW(x+l)···.、及像素選擇 線PS(x-1)、PS(X)、PS(x+1y·· •。在本較佳實施例中,、像 素選擇線PS(X)可以控制開關SW(x),使光二極體pD(xX£ 匯排20為一通路,同時使前一偏壓開關b — swh)成為通 路狀態。也就是說,在整個曝光過程中,讀取光二極體 (X)資料的同時,前一光二極體PD(X-1)也正被執行歸零的 步驟。 v 第三圖所示為應用於此較佳實施例之線性像素感測器 的時間與電壓關係示意圖。開始線(start)為開始讀取^ 一個光二極體PD(1)的控制訊號;而像素選擇線(pixel Select)PS(l)、pS(2)….PS(x)為各自讀取光二極體 pD(1)Page 8 479358 V. Description of the Invention (5) Some embodiments of the present invention will be described in detail as follows. However, in addition to the detailed description, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, which is subject to the scope of subsequent patents. The different parts of the scanner of the present invention are not drawn to size. Some $ scale has been exaggerated compared to other related scales to provide a clearer private description and understanding of the invention. In addition, although the embodiment drawn here is displayed in two dimensions with different widths and depths at different stages, it should be clearly understood that the displayed area is only part of the scanner, which may include many in three dimensions Elements arranged in. In contrast, when the actual component is manufactured, the area shown in the illustration has a three-dimensional length, width, and height. The body sensor of the present invention senses a plurality of first and first sensing photocell conductors having a phase cell. When the voltage photocell makes the sensing under the element, the photocell supplies power to each switching element while the photocell supplies power. The first sense of the first function has the purpose of a neighbor. The linear component is located on the road connected to the two-channel photocell. The near position is to provide zero and read supplements. The oxygen is connected to the connection. A device having a linear complementary metal-oxide semiconductor conducting step in total. A first pass of a photoreceptor cell of a semiconductor sensor includes at least a column, a double path, and is located at a connection. Filling oxygen for half a time, but several photoreceptor-corresponding switch elements are aligned, two photoreceptor cell positions are linearly zero with each other, and the complex path is composed of the first switch element and the second sensor-scanner. Circuit,. In the photoreceptor cell, a photoperiod photoreceptor cell has a method of connecting to at least 479358 provided in a common bus. The first switching element of the invention description (6) ~ ----, and there is a path A bypass is controlled by one phase and two switching elements; secondly, the second switching element of the first photosensitive cell and the second switching element of the second photosensitive cell are active at the same time. A nearby position below the photoreceptor cell. The embodiment of the present invention will be described with reference to additional drawings. As shown in the second figure, a schematic diagram of a pixel cell of a pixel sensor applicable to a scanner according to the present invention is shown. The photosensitive cell of each linear sensor includes a photodiode, a switch SW, a bias switch B-SW, and a pixel selection line ps. All the photoreceptors will be connected to a bus 20 in common and connected to an external control circuit (not shown). Each photodiode pD (x-1), PD (x), > ••• has its corresponding switch SW (xl), SW (x), SW (X + 1) ..., bias Press switches B-SW (x-1), B-SW (x), B-SW (x + 1) ..., and pixel selection lines PS (x-1), PS (X), PS (x + 1y ··. In the preferred embodiment, the pixel selection line PS (X) can control the switch SW (x) so that the photodiode pD (xX £ bus 20 is a path, and at the same time, the previous one is biased. The pressure switch b — swh) becomes the channel state. That is to say, during the entire exposure process, while reading the photodiode (X) data, the previous photodiode PD (X-1) is also being reset to zero. V. The third figure shows the relationship between time and voltage of the linear pixel sensor used in this preferred embodiment. The start line is the start of reading ^ a control signal of a photodiode PD (1) ; And the pixel select line (pixel Select) PS (l), pS (2) ... PS (x) are the respective reading photodiode pD (1)
第10頁 五、發明說明(7) 、PD(2)…· PD(x)的控制訊號。時間 、〇黎個痕#日卑門十 了 Ί t0至tl為訊號歷時t( m' r〇c 一從時間t〇(訊號電壓的下 降)開始’至下-個訊號的電壓下降時間ta結束。像 擇線PS(1)選定光二極體PD(1)時,光二極體pD(1)在時間 to開始,進行歸零,於時間11結束歸零的步驟,並且在日^ 間tb時開始讀取其攝取的影像資料;對光二極體?])(1)而 言,其所經歷的曝光過程之時間為(t —pr〇cess_2*t(s))。 m 同樣的’二極體PD(2)所經歷的曝光過程之時間亦為 (t-process-2*t(s))。根據上述的時間控制方式,在此線 性感測器上的每一個光二極體的曝光過程之時間皆相同。 再者,當一光二極體在進行歸零步驟的同時,其相鄰的下 一個光二極體則正在進行讀取資料的步驟。 6 ^上所述僅為本發明之較佳實施例而已,並非用以限 =本發明之申請專利範圍;凡其它未脫離本發明所揭示之 =神下所完成之等效改變或修飾,均應包含在下述之申古主 專利範圍内。 月Page 10 V. Description of the invention (7), PD (2) ... · PD (x) control signal. Time, 〇 黎 个 痕 # Ribe Gate is ten, t0 to tl is the signal duration t (m 'r〇c-from the time t〇 (the drop of the signal voltage)' to the end of the next signal voltage drop time ta When the photodiode PD (1) is selected like the selection line PS (1), the photodiode pD (1) starts at time to, performs zeroing, ends at time 11 and returns to zero, and at time tb Began to read the captured image data; for a photodiode?]) (1), the time of the exposure process it experienced was (t — pr0cess_2 * t (s)). m The exposure time of the same 'diode PD (2) is also (t-process-2 * t (s)). According to the time control method described above, the exposure time of each photodiode on the line sensor is the same. Furthermore, while a photodiode is performing the zeroing step, the next photodiode adjacent to it is performing the data reading step. 6 ^ The above is only a preferred embodiment of the present invention, and is not intended to be limited to the scope of the patent application of the present invention; all other equivalent changes or modifications that do not depart from the disclosure of the present invention = made under God are all Should be included in the scope of the main Shengu patent. month
第11頁 479358 圖式簡單說明 ‘ 第一圖為傳統主動感測器中以光二極體為主之被動感 光胞的結構示意圖; 第二圖係根據本發明應用在掃描器之像素感測器的感 光胞結構示意圖;及 第三圖為本發明實施例所進行掃瞄時,時間對電壓的 訊號部份示意圖。 主要部分之代表符號: φ 20 匯排 11 0 被動像素胞 120 列匯排Page 479358 Schematic description of the diagram 'The first diagram is a schematic structural diagram of a photodiode-based passive photoreceptor cell in a traditional active sensor; the second diagram is a pixel sensor applied to a scanner according to the present invention A schematic diagram of the structure of the photoreceptor cell; and the third diagram is a schematic diagram of a signal portion of time versus voltage during scanning according to an embodiment of the present invention. The main part of the symbol: φ 20 bus 11 0 passive pixel cell 120 row bus
第12頁Page 12
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