TW477731B - Closed-loop concentration control system for chemical mechanical polishing slurry - Google Patents

Abstract

The polishing slurry is fed into a closed-loop control system through a pipeline. The polishing slurry will first enter an ultrasonic concentration detector. The original measured data of the polishing slurry is a flow speed at that time. The measured value can be converted into a percentage of concentration by weight at that time through a memory data table. The converted concentration data by weight will be transmitted to a programmable logic controller (PLC). Meanwhile, the liquid level volume data in the distribution tank will also be transmitted to the PLC. Then, the PLC will determine whether the amount of the oxidation agent is sufficient. If the amount of the oxidation agent is insufficient, the PLC will control an analog control valve to replenish the oxidation agent to the distribution tank through the analog control valve.

Description

477731 V. Description of the invention (l) 5-1 Field of the invention: The present invention relates to a chemical mechanical polishing slurry (chemica 1 mechanical polishing slurry; CMP slurry), and particularly relates to a chemical mechanical polishing slurry (CMP slurry) Closed loop (close loop) concentration control system. 5-2 Background of the Invention: The development of integrated circuits (1C) is becoming more complex, and the specifications for manufacturing processes are becoming higher and higher. As the requirements for the accumulation of moving elements on a single wafer have gradually increased, the full-length and short-distances on the surface of the wafer, or the top and bottom, have also evolved to conditions that require better planarization. Therefore, in the manufacture of integrated circuits (I c), the flatness of the surface of the semiconductor substrate is of considerable importance. In addition, the 'flatness' will also improve the ability to fill and penetrate holes in the dielectric layer. Flattening has been used in various processes. The most well-known of today's highly demanding applications is the chemical mechanical polishing (chemica) [mechanical polinging; CMp). Chemical Mechanical Polishing (CMp) is the only comprehensive flattening method available today in ultra-large scale integration (ULSI) circuits.

Page 4 477731 V. Description of the invention (2) i IT1, PlanariZtin) technology. This technology comes from the International Confectionery Corporation (I BM) 'Through decades of research by the International Business Machines Corporation' The Chemical Mechanical Polishing Method (CMp) has been successfully applied in many ϋ〇 口 > ^ The above example is "Central Processing Unit; • etc. The principle of the chemical mechanical grinding method (CMp) is to use a mechanical grinding method similar to a sharpening knife (I ^ n 1 fe grinder), and then cooperate with the appropriate chemical = f (reagent), in order to be able to smooth the wafer (wafer) surface-converged contours together flattening technology. In short, the process of mechanical polishing (CMP) involves the support and rotation of a wet polishing surface under the control of chemistry, pressure, and two, 1 and 1 semiconductor substrates, Once the parameters of each process are properly controlled, the mechanical polishing method (CMP) will provide a surprisingly high level of flatness on the surface being polished. This is because during the grinding process, the materials are moved mechanically and chemically. This will cause the polished surface to have a degree. Because of this, semiconductor semiconductor suppliers worldwide and suppliers of semiconductor equipment Γ pMp \ preparatives have successively invested in the technology of chemical mechanical polishing (LMP). During the development of f integrated circuit (IC) manufacturing, in order to remove materials and dust from wafers, it is necessary to grind semiconductor materials as early as possible. Such as conventional chemical mechanical polishing (CMP) process, a typical example of a wet-type chemical abrasive or polishing slurry is used on a motor-driven ten cans close to the-semiconductor wafer. The polishing platform is a weight-wet material. For example polyurethane. On abrasive pads

477731 V. Description of the invention (3) ―At the same time as the green surface, the wafer (wafer) and the pad are in different positions, and the rotation makes the abrasive material including the abrasive slurry easy to transfer. Between the gasket. Therefore, the requirements for the flatness of the grinding and polishing surfaces of the abrasive pads and slurry are determined. Grinding method (CMP) is the same as gg ===== When hitting the wafer surface, CMP researches the surface material on the short distance "2. It is used to strengthen the removal of the long distance and use 151 P Μ 枓. There is bismuth Here, the chemical mechanical polishing method (CMP) should learn the polishing slurry: two abrasive slurry with abrasive effect and chemically active ingredients.-Chemical is a stone dioxide / (dioxide f abrasives such as oxide Ming) or chemical polishing slurry Also spoon 1ca) 'In order to be used as an abrasion primitive. In addition, the period fl, # Μ π I 3 is a selective chemical that can be used in the manufacturing process and the suspected substrate surface. Therefore, The polishing effect guide on the wafer; the dual role of drying human money. The reproducibility and uniformity of the chemical mechanical polishing (CMP) process require periodic polishing of the polishing slurry. Measurement and rigorous control. The traditional typical grinding slurry is matched by: an oxidant (such as ferricnitrate; ferricnitrate) and a particle: (such as alumina; a 丨 um i na). Other examples In the middle, it is a kind of pre-mixing grinding slurry. It is important to maintain precise control of the overall research, because the stability of the slurry can be lower than the overall time. The cause of the instability of some slurry can be attributed to oxidation.

477731 V. Description of the invention (4) The agent is absorbed by the particles on the surface area, which causes the concentration of the oxidant to decrease. In addition, the concentration of the oxidant varies due to mixing errors and uncertain changes in the original oxidant used to prepare the slurry. In the chemical mechanical polishing (CMP) process, since the concentration of the oxidant is one of the key parameters to control the metal removal rate (R · R), the variation of the oxidant concentration is most likely to occur during the chemical mechanical polishing (CMP) A significant change in removal rate was caused during the process of). Therefore, during the CMP process, the concentration of the oxidant needs to be monitored and measured. One of the traditional methods is a pre-mixing method (pre 1 i X ing), which first mixes a grinding slurry (for example, ssw 2 0 0 〇) with an oxidant (for example, hydrogen peroxide; Η 20 2) before pre-mixing The solution was titrated with potassium permanganate (KMnOO) in order to determine the chemical concentration after mixing. The titration equation is shown in the first figure, and the liquid level concentration was calculated according to the potential difference at that time. The calculation of the equation It is as follows: Equation (1) X 2+ Equation (2) X Equation (3). However, in the atmosphere, both the excessively acidic clock (KM η 0 4) and the pre-filled solution will have a phenomenon of decay, so It is easy to cause variation in the removal rate (R · R) in chemical mechanical polishing (CMP). Another traditional method is a port-to-port mixing method, that is, the polishing slurry and the oxidant are at the end of the machine. Mixing, because the concentration of the oxidant is high but the amount is small, it is difficult to control the pump. Moreover, the traditional method cannot immediately compensate for the insufficient amount of the oxidant.

Page 7 477731 V. Description of the invention (5) In view of the above-mentioned reasons, we need a new and improved chemical mechanical polishing slurry concentration control method. In order to improve the yield and yield of subsequent processes. 5-3 Purpose and Summary of the Invention: i In view of the above-mentioned background of the invention, the traditional double metal damascene process has many disadvantages. The present invention provides a method to overcome the problems of the traditional process. The purpose of the present invention is to provide a chemical mechanical polishing slurry concentration control method. The present invention achieves the requirement of continuous monitoring of the concentration by closed-loop control, in order to improve the problem that the insufficient amount of oxidant cannot be immediately compensated when using the titration method. Can solve the above problems. Another object of the present invention is to provide a closed-loop concentration control method of a chemical mechanical polishing slurry. Since the oxidant and the polishing slurry do not decay in an ultrasonic liquid concentration analyzer, therefore, Does not affect the stability of the concentration. Therefore, in the present invention, the concentration of the oxidizing agent in the volume can be measured by the ultrasonic fluid .. body jUj chamber detector, and a fixed concentration can be obtained. Therefore, the present invention can effectively improve the yield in the process.

Page 8 477731 V. Description of the invention

According to the above-mentioned purpose, the present invention discloses a closed-loop concentration control method for a chemical mechanical polishing slurry. In the embodiment of the present invention, first, an oxidant (for example, hydrogen peroxide; hoe), a raw material slurry (for example, ssw2000), and deionized water (DIion water) are sent to a mixing tank (bl end) through each pipeline. tank) and mixing to form a grinding slurry. This grinding device is then transferred to a distribution tank (distribution tank) via a pipeline. The distribution tank then sends the grinding slurry through a pipeline to a closed-loop control system ' This system includes an ultrasonic concentration detector, an analog control valve (ana 丨 〇g

valve), programmable controller (pr〇gram L〇gic controller; PLC

) And the official control Is ° slurry will first enter the ultrasonic concentration detector ’to facilitate concentration measurement. Then, the pipeline controller controls the slurry to return to the distribution tank through the return flow path. In addition, the lean material measured by the ultrasonic concentration detector is at that time; ^ body speed 麁, this measurement value can be converted into the weight percentage concentration at that time by the memory data table

The way of changing can be computer or manual calculation. The converted weight = percentage concentration of the bin material will be transmitted to the programmable controller (PLC), and the% 'volumetric volume material in the distribution tank will also be transmitted to the programmable controller (iLC) ^. The controller (PLC) can determine whether the oxidant is sufficient. If the oxidant is inadequate, the programmable controller (pLC) will control the analog control valve and send the replenishment of the oxidant to the distribution tank via the analog control valve. A part of the polishing liquid in the distribution tank is returned to the mixing tank through the return pipe, and the above steps are repeated until a fixed concentration value is obtained and the above steps are continuously performed to maintain the fixed concentration value.

Page 9 477731

5-4 Detailed description of the invention: In addition to the detailed description of the preferred embodiments of the present invention, the present invention can also be described, and the scope of the present invention is not limited. The detailed description is as follows. Decide 'which shall be subject to the scope of the subsequent patents

As shown in the second figure, firstly, deionized water (D. I water) is fed through the official feed channel 2 10, oxidant (such as hydrogen peroxide 30%; η 2〇J through the second feed pipe). Feed Pi Ping 220 and raw material pulp (for example, SSW2000), t are fed from a second feed line 230 to a first conveyance line 31. This mixed feed is then passed through the first A conveying pipe 3 1 0 is conveyed to a blend tank 2 50 to be stirred and mixed to form a grinding slurry. The grinding slurry is then sent to a distribution tank 260 through a second conveying line 32 0. The grinding slurry is sent from the distribution tank 2 60 to a closed-loop concentration control system 4 0 through the third conveying pipe 3 3 0. The closed-loop concentration control system 4 0 0 includes at least an ultrasonic concentration detector 2 7 0, a pipeline controller 2 8 0, a programmable controller (PLC) 2 9 0 and a control valve 3 0 0, the control valve 3 0 0 can be an analog control valve (a na 1 〇g va 1 ve). The slurry will first enter the ultrasonic concentration detector 270 to facilitate the concentration determination. Then, it will pass through the pipeline controller 280 Control the refining slurry from the fourth conveying pipe 3 4 0 back to the distribution tank 2 6 0

Page 10 477731

Ο In addition, the ultrasonic concentration detector 2 70, the material system is a fluid velocity at the time, this measured h 2 ^ meaning of the original grinder pulp data (memory data table) to convert to 5 = 5 = 1 memory data table (The conversion method can be carried out by computer or manual operation. Two specific concentration, its specific concentration data will be passed through a first data = weight percent of different weight ~ lssl0n 1ιη "= road " ata person, Search for the programmable control cry (pt η 9 q η, at this time, the liquid level in the distribution tank 2 60 ""-(PL〇 "〇 data transmission line (data transmissionu,) 38 ^ The Nigong controller (29 ° L can be ^ 1 ^ 38 0. It is programmable to determine whether the oxidant is sufficient. The oxidant (PLC) 29 ° can be borrowed (PLC) 2 9 0 will be transmitted via the third data ^疋 / jn4, programmable controller 3. 0, and sends the oxidant from the pipeline 240 to the distribution tank 26q via the sixth conveying pipeline 36G via the analog control valve 3. 〇 The fourth into the distribution tank 260 , A part of the grinding liquid is sent through the fifth conveying pipe 35o :: 合 合 槽 2 5 0 '亚 Repeat the above steps until a fixed concentration is obtained And continue to carry out the above steps to maintain this fixed concentration value. Let ’s test the original picture (such as SSW2 0 0 0) containing oxidized oxidants " such as HA 30% > The first-feeding line 51 is fed into the mixing tank yo to form a grinding slurry. The grinding crack is sent from the mixing tank 500 to a closed-loop control system 65 through the first feeding line 520. This closed-loop control system 6 50 includes an ultrasonic concentration detector 53 0, a pipeline controller 54 0, and

477731 V. Description of the invention (9) 'Program controller (PLC) 57〇 and control room — control valve (analog., Control valve 600 may be-class 1 detector 530, in order to facilitate the advanced human superintendent The sonic concentration controller 540 controls the grinding slurry to be measured from Chen. Then, through the pipeline. Lu Lu 550 returns to the mixing tank 500 i. In addition, the ultrasonic concentration detector is based on a current fluid velocity. The measured raw material data of the grinding slurry is converted into a person = can be converted to a memory data table (the conversion method can be weighted by computer or manually by 1% concentration, and the specific concentration data will be passed through the first data transmission line: The converted weight percentage transmission line) 5 6 0 is transmitted to J ^ ata, at this time, the liquid level in the mixing tank 5 0 0 =: controller (pLC) 570 data transmission wheel line (data transmission u, the lean material will also pass through the second asset controller (PLC) 570, and then, the program can be programmed to determine whether the oxidant is sufficient. The oxidant is 3 system (pLC) 570 can Borrow (PLC) 5 7 0 will go through the third data transfer line < 路 ^ 妒 = 呈 式 控The controller 6 〇, and the oxidation through the analog control valve 600, the analog control valve line 610 sends a supplementary amount from the second feed through the above-mentioned steps through the third delivery line 62, until a solid state of an oxidant is obtained. : ^ 上 00 中. And repeat the above steps to maintain this fixed concentration value. / Chen value and continue to advance + In the embodiment of the present invention, a closed-loop concentration control system is provided. Fourth The figure reveals that Ύ + 机械 mechanical grinding slurry ^ The method flow step 477731 of the present invention 5. In the description of the invention (ίο) step, the oxidant concentration data detected by the ultrasonic concentration detector 110 will be transmitted to a programmable controller (PLC) In 120, the programmable controller (PLC) 1 2 0 controls the oxidant control valve 1 3 0, sends the supplementary oxidant into the mixing process 1 4 0, and then repeats the above process. The operating theory of the ultrasonic concentration detector is as follows : Lv is the ultrasonic velocity of the fluid, and the ultrasonic velocity of the fluid is related to the fluid's volumetric modulus (1 i qu id bulk modulus; B) and the density of the fluid (density; D), so , L v = F (B, D). L% is the weight percent concentration of the fluid, and the weight percent concentration of the fluid is related to the ultrasonic velocity of the fluid and the temperature (temperature; T) of the fluid. Therefore, L% two F (Lv, T) Therefore, as long as the current velocity and temperature of the fluid are measured, the concentration can be calculated from the database stored in the memory, as shown in the fifth figure. According to the present invention, the polishing slurry can also be automatically controlled during the on-line operation (on-1 in) of the polishing slurry process. Therefore, the present invention achieves the requirement of continuously monitoring the concentration through closed-loop control to improve the problem that the titration timing cannot immediately compensate for the lack of oxidant. Since the oxidant and the slurry are not decayed in the ultrasonic liquid concentration detector, the stability of the concentration is not affected. Therefore, in the present invention, the concentration of the oxidant in the volume can be measured by the ultrasonic liquid concentration detector, and a fixed concentration can be obtained. Therefore, the present invention can effectively improve the yield in the process. Obviously, according to the description in the above embodiments, the present invention may have many modifications and differences. It is therefore within the scope of the appended claims

Page 13 477731

V. Description of the invention It is understood in (11) that, in addition to the above detailed description, the present invention can be widely implemented in other embodiments. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention should be included in the following application patents Within range.

Page 477731 Brief description of the diagram The first diagram is a schematic diagram of the titration equation of hydrogen peroxide (H2O2) and potassium permanganate (KMη04); the second diagram is to illustrate a preferred embodiment of the present invention, the chemical A cross-sectional view of a closed-loop concentration control system of a mechanical polishing slurry; a third view is a cross-sectional view illustrating a closed-loop concentration control system of a chemical mechanical polishing slurry in another preferred embodiment of the present invention; a fourth view is one of the descriptions of the present invention In a preferred embodiment, a flowchart of a closed-loop concentration control system of a chemical mechanical polishing slurry; and the fifth figure are a graph of a rate versus weight percentage of a database stored in a memory. Representative symbols of the main parts: 110 Ultrasonic concentration detector 〇120 Programmable controller (PLC) 130 Oxidation control valve 〇140 Mixing process 〇210 The first feed line of the second picture 220 The second feed of the second picture Feed line 230 # ~~~-The third feed line of the picture

Page 15 477731 Brief description of drawings 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 500 510 520 530 540 550 560 Second picture Second picture Second picture Second picture Second picture Second picture Second picture Second figure Second figure Second figure Second figure Second figure Second figure Second figure Second figure Second figure Second figure Second figure Third figure Third figure Third figure Third figure Third figure Third figure third Figure 3 of the chart of the first chapter of the first chapter of the first chapter of the first chapter of the first chapter of the first chapter of the first chapter of the first chapter The fourth feeding tank. With slot. Sonic concentration road control Program control Ratio control One conveyance Two conveyance Three conveyance Four conveyance Five conveyance Six conveyance One data Two data Three data Ring concentration Distributing tank. Piping degree detector. Device. Controller (PLC) valve. Pipeline. Pipeline. Pipeline. Pipeline. Pipeline. Pipeline. Transmission line. Transmission line. Transmission line. Control system. A feed line. A delivery pipeline. Sonic concentration detector circuit controller. Two delivery pipelines. A data transmission line.

Page 16 477731 Illustration of the diagram 570 Programmable controller (PLC) of the second diagram. 580 The second data transmission line of the third picture 0 590 The third data transmission line of the third picture 0 600 The control valve of the third picture 610 The second feed pipeline of the third picture 0620 The third feed pipeline of the third picture 〇630 Closed-loop concentration control system in the figure.

〇 Page 17

Claims (1)

477731 VI. Application Patent Scope 1 · A chemical mechanical polishing slurry concentration control system, the concentration control system includes at least: a mixing device, the mixing device is used for mixing a first feed flowing into the mixing device to form a Homogeneous mixed fluid; a closed-loop concentration control device that measures the content concentration data of the homogeneous mixed fluid and monitors a second fluid to enter the closed-loop concentration control device, wherein the homogeneous mixed fluid flows from the mixing device It flows to the closed-loop concentration control device, and the homogeneous mixed fluid flows back from the closed-loop concentration control device to the mixing device; and a conveying device, the conveying device is used to convey the second fluid into the closed-loop concentration control device. 2. The concentration control system for a chemical mechanical polishing slurry as described in item 1 of the scope of the patent application, wherein the closed-loop concentration control device includes at least: a concentration detector having an outlet end and an inlet end, the concentration detector It is used to measure the content concentration of the homogeneous mixed fluid, wherein the homogeneous mixed flow system flows from the mixing device to the inlet end of the concentration detector; a pipeline controller is connected to the concentration On the outlet end of the detector, the pipeline controller is used to control the homogeneous mixed fluid to flow out of the closed-loop concentration control device from the outlet end of the concentration detector and return to the mixing device; one having an outlet end and An inlet valve, the valve is used to control the flow of the second fluid, wherein the second flow system flows from the outlet end of the valve Page 18 477731 VI. The scope of patent application is to the mixing device; and a programmable controller (PLC), which has the function of receiving a concentration data, a level volume data, and a demand data And the function of transmitting the demand data. 3. The concentration control system of a chemical mechanical polishing slurry as described in item 2 of the scope of patent application, wherein the concentration data received by the programmable controller (PLC) is transmitted by the concentration detector to the programmable controller ( PLC). 4 · A chemical mechanical polishing slurry concentration control system as described in item 2 of the scope of patent application, wherein the liquid level volume data received by the programmable controller (PLC) is transmitted from the mixing device to the programmable controller (PLC). 5. A chemical mechanical polishing slurry concentration control system as described in item 2 of the scope of the patent application, wherein the demand data calculated by the programmable controller (PLC) at least includes demand data of a second fluid. The demand data of the two fluids are calculated and calculated by the programmable controller (PLC) according to the concentration data and the level volume data. 6. A chemical mechanical polishing slurry concentration 0 degree control system according to item 3 of the scope of patent application, wherein the above-mentioned demand data of the second fluid is transmitted from the programmable controller (PLC) to the valve. 7. Concentration of a chemical mechanical polishing slurry as described in item 2 of the scope of patent application Page 19, 477731 VI. Patent application range control system, in which the programmable controller (PLC) is used to control the valve, so as to flow the required amount of the second fluid from the closed-loop concentration control device into the Mixing device. 8 · A chemical mechanical polishing slurry concentration control system, the concentration control system includes at least: a first mixing device, the first mixing device is used to mix a first fluid flowing into the first mixing device to form a A first uniformly mixed fluid and a second mixing device, the second mixing device is used to mix the first uniformly mixed fluid and a second fluid flowing into the second mixing device to form a second uniformly mixed fluid, wherein, The first uniform mixed flow system flows from the first mixing device into the second mixing device; a closed-loop concentration control device, and the second uniform mixed fluid flows from the second mixing device to the closed-loop concentration control device so as to facilitate the closed-loop The concentration control device measures the content concentration data of the second uniformly mixed fluid and monitors the second fluid to enter the closed-loop concentration control device, wherein the second uniformly mixed fluid flows back from the closed-loop concentration control device to the first Two mixing devices; and a conveying device for conveying the second fluid into the closed-loop concentration System device. 9 · A chemical mechanical polishing slurry concentration control system as described in item 8 of the scope of patent application, wherein the above-mentioned closed-loop concentration control device includes at least: Page 20 477731 VI. Application for patent scope 1. A detector is used for measurement. The inlet end of the second homogeneous mixer is controlled by a pipe. The mixed fluid flows from the concentration and returns to The first has a flow of two fluids to the mixing device; a programmable control for receiving a concentration information and transmitting a concentration detector for the mouth end and an inlet end, the concentration detecting the second uniform mixed fluid Content concentration, wherein the confluence system flows from the second mixing device to the concentration detector, the pipeline controller is connected to the concentration detector, and the pipeline controller is used to control the second uniformity detector The outlet end of the closed-loop concentration control device is installed in the two mixing device; a valve at the mouth end and an inlet end is used to control the valve, and the second flow system flows from the outlet end of the valve to a controller (PLC ), The programmable controller (PLC) has the function of receiving material level volume data and calculating a demand quantity and quantity data. 10. The concentration control system of a chemical mechanical polishing slurry as described in item 9 of the scope of patent application, wherein the data received by the programmable controller (PLC) is transmitted by the concentration detector to the programmable controller ( PLC). 1 1. A chemical mechanical polishing slurry concentration control system as described in item 9 of the scope of patent application, wherein the liquid level volume received by the programmable controller (PLC) is transmitted from the second mixing device to the programmable Controller (PLC). 1 2. The concentration of a chemical mechanical polishing slurry as described in item 9 of the scope of patent application Page 21 477731 6. The scope of patent application control system, wherein the demand data calculated by the programmable controller (PLC) mentioned above includes at least the demand data of the second fluid and the demand data of the second fluid is obtained by The programmable controller (PLC) calculates and obtains based on the concentration data and the level volume data. 1 3 · A chemical mechanical polishing slurry concentration control system as described in item 12 of the scope of patent application, wherein the demand data of the second fluid is transmitted from the programmable controller (PLC) to the valve. 1 4. A chemical mechanical polishing slurry concentration control system as described in item 9 of the scope of the patent application, wherein the programmable controller (PLC) is used to control the valve so that the second fluid The required amount flows from the closed-loop concentration control device into the second mixing device. 1 5. A concentration control system for a chemical mechanical polishing slurry, the concentration control system includes at least: a mixing tank for mixing a first feed to form a first uniformly mixed fluid; a first feed Material distribution device, the first feeding device is used to convey the first feeding material into the mixing tank; a distribution tank is used to mix the first uniformly mixed fluid with a second feeding material to form a A second uniform mixed fluid, wherein the first uniform mixed flow system flows from the mixing tank into the distribution tank; an ultrasonic concentration detector having an outlet end and an inlet end, the Page 22 477731 VI. Patent application scope The ultrasonic concentration detector is used to measure the content concentration of the second uniform mixed fluid, wherein the second uniform mixed flow system flows from the distribution tank to the ultrasonic concentration detector. The inlet end; a pipeline controller connected to the outlet end of the ultrasonic concentration detector, wherein the pipeline controller is used to control the second homogeneous mixed fluid from the ultrasonic wave The outlet of the concentration detector returns to the distribution tank; a valve is used to control the flow of a second feed, wherein the second feed flows from the valve to the distribution tank; a second feed Device, the second feeding device is used to feed the second feed into the valve; and a programmable controller (PLC), the programmable controller (PLC) is used to receive the ultrasonic concentration detector The concentration data of the content transmitted and a level volume data transmitted by the distribution tank, and then the demand data of a second feed is calculated based on the concentration data of the content and the level volume data, and The second feed demand information transmitted to the valve to control the valve of the second feed demand flow into the distributor trough. 16. The chemical mechanical polishing slurry concentration control system according to item 15 of the scope of the patent application, wherein the above-mentioned first feed includes at least one polishing slurry, a deionized water, and a first oxidant. 1 7. The chemical mechanical polishing slurry concentration control system according to item 15 of the scope of the patent application, wherein the above-mentioned second feed contains at least a second oxidant. Page 23 477731 VI. Scope of patent application 18 · The chemical mechanical polishing slurry concentration control system as described in item 16 of the patent application range, wherein the above-mentioned polishing slurry is a ssw2 0 0 0 polishing slurry. 19 · The chemical mechanical polishing slurry concentration control system according to item 16 of the scope of patent application, wherein the first oxidant is a hydrogen peroxide solution. 2 0. The chemical mechanical polishing slurry concentration control system according to item 17 of the scope of patent application, wherein the second oxidant is a hydrogen peroxide solution. Page 24