經濟部智慧財產局員工消費合作社印製 476978 A7 B7_ 五、發明說明（1 ) (技術領域） 本發明係關於一種在樣品表面一面噴鍍化合物氣體一 面照射聚焦離子束，形成薄膜，或加以蝕刻加工的聚束離 子束裝置與使用於聚焦離子束裝置的化合物蒸汽噴鍍裝置 (背景技術） 聚焦離子束裝置係在樣品表面掃描聚焦離子束，偵測 從樣品表面發生之二次電子或二次離子，而從該分布可放 大觀察樣品表面。又在樣品表面掃描聚焦離子束，可濺鍍 蝕刻加工樣品表面。此時，同時地可一面將化合物蒸汽噴 鍍於樣品表面一面進行蝕刻加工之氣體輔助飩刻加工。進 行氣體輔助鈾刻，則可藉化合物蒸汽與樣品材質之組合， 可進行與一般之濺鍍蝕刻比較加工速度較快之蝕刻，或利 用藉由樣品材質改變蝕刻速度之選擇性蝕刻。又，將成爲 薄膜原料之化合物蒸汽導入在樣品室，一面噴鍍於樣品表 面一面在樣品表面掃描聚焦離子束，可進行在樣品表面形 成薄膜之沈積加工。 如此地，由於在聚焦離子束裝置之樣品室導入化合物 蒸汽爲有效，因此提案幾種用以將化合物蒸汽噴鍍於樣品 表面的裝置。 例如日本特開昭6 1 - 1 2 8 6 4號係揭示用以將化 合物蒸汽噴鍍於樣品之最基本之構造。將化合物蒸汽原料 裝在容器，在連接設置樣品之樣品室的管中途設置閥，藉 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -4 - «Λ---^-------丨 ------ 丨—訂-----丨·！· · (請先閱讀背面之注意事項再填寫本頁) 476978 A7 ____ B7 五、發明說明（） 由閥之開閉來控制對於樣品表面之化合物蒸汽噴鍍。 又在日本特開平1 1 一 18569 1號中，揭示裝入 化合物蒸汽原料之容器的構造。 在上述之曰本特開平1 1 一 1 8 5 6 9 1號中，揭示 化合物蒸汽原料一般爲粉末狀，並將該粉末裝在容器，又 揭示將裝入化合物蒸汽原料之粉末的容器裝設於化合物蒸 汽噴鍍裝置（氣槍）時之課題與其解決對策。在此所表示 之課題係化合物蒸汽原料的粉末灑在容器周邊，作爲該解 決對策，表示維持容器之姿勢之構造，成爲容器之裝塡化 合物蒸汽原料所用之孔徑經常朝天之狀態。 然而，可知具有如此經常開放之孔徑的容器使化合物 蒸汽原料不會灑落，僅以容器之姿勢並無法實現。 又，由於聚焦離子束裝置之應用也有多方面，因此所 使用之化合物蒸汽之種類也較多。如此，化合物蒸汽原料 在室溫之狀態不僅爲粉末，也可能有固體或液體等。又， 也可能爲蒸汽壓極低，又容易氣化者。又，藉化學上性質 ，也可能爲對人體或環境有害者，或高發火性等之高危險 性者。如此地，很難將多方面之化合物蒸汽原料以具有孔 徑之容器加以處理。又，在裝換作業上需要特別之設備。 (發明之揭示） 本發明之化合物蒸汽噴鍍裝置，屬於被裝設在將聚焦 離子束照射在化合物蒸汽存在之氣氛內位於樣品之所定位 置的聚焦離子束裝置的化合物蒸汽噴鍍裝置，其特徵爲具 (請先閱讀背面之注意事項再填寫本頁) « # 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -5- 476978 A7 B7 的第二容器，及貫穿 物蒸汽從上述第二容 及經由上述引導部與 物蒸汽噴鍍在所定位 -容器。 嘴之間並裝載上述樣 樣品室或全部連接的 物蒸汽噴鑛裝置均經 之構造，爲其特徵者 請 先 閱 讀 背 之 注 意 事Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 476978 A7 B7_ V. Description of the Invention (1) (Technical Field) The present invention relates to a method of irradiating a focused ion beam by spraying a compound gas on the surface of a sample to form a thin film or etching process Focused ion beam device and compound vapor deposition device used for focused ion beam device (background technology) The focused ion beam device scans a focused ion beam on the surface of a sample to detect secondary electrons or secondary ions occurring from the surface of the sample. From this distribution, the surface of the sample can be magnified. The focused ion beam is scanned on the surface of the sample, and the surface of the sample can be sputter-etched and processed. At this time, gas-assisted engraving can be performed while spraying the compound vapor on the sample surface at the same time. For gas-assisted uranium engraving, the combination of compound vapor and sample material can be used to perform etching at a faster processing speed than ordinary sputtering etching, or selective etching can be used to change the etching rate by the sample material. In addition, the compound vapor that becomes the raw material of the thin film is introduced into the sample chamber, and the ion beam is scanned and focused on the surface of the sample while being sprayed on the surface of the sample, so that a thin film can be deposited on the surface of the sample. In this way, since it is effective to introduce compound vapor into the sample chamber of the focused ion beam device, several devices for spraying compound vapor onto the surface of the sample have been proposed. For example, Japanese Patent Application Laid-Open No. 6 1-1 2 8 6 4 discloses the most basic structure for spraying a compound vapor onto a sample. The compound vapor raw material is packed in a container, and a valve is installed in the middle of the pipe connected to the sample chamber where the sample is set. According to this paper size, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -4-«Λ --- ^ ------- 丨 ------ 丨 --Order ----- 丨 ·! · · (Please read the precautions on the back before filling in this page) 476978 A7 ____ B7 V. Description of the invention () The valve spraying is controlled by the opening and closing of the valve. Also, Japanese Patent Application Laid-Open No. 1-11-185691 discloses the structure of a container containing a raw material for compound vapor. In the aforementioned Japanese Patent Application Laid-Open No. 1 1 to 1 8 5 6 9 1, it is disclosed that the compound steam raw material is generally in the form of a powder, and the powder is packed in a container. It is also disclosed that the container containing the compound steam raw material powder is installed. Problems in compound vapor deposition equipment (air guns) and their solutions. The problem shown here is that the powder of the compound steam raw material is sprinkled around the container. As a countermeasure, the structure of maintaining the posture of the container is such that the pore diameter of the container containing the compound steam raw material is always facing the sky. However, it can be seen that a container having such a frequently-opened aperture prevents the compound vapor raw material from being spilled, and it cannot be achieved only by the container posture. In addition, since there are various applications of the focused ion beam device, there are many types of compound vapors used. In this way, the compound vapor raw material is not only powder but also solid or liquid at room temperature. In addition, the vapor pressure may be extremely low, and it may be easily vaporized. In addition, due to its chemical nature, it may also be a person who is harmful to the human body or the environment, or a person with a high risk of fire. In this way, it is difficult to process a wide range of compound vapor raw materials in a container having a diameter. In addition, special equipment is required for replacement work. (Disclosure of the Invention) The compound vapor spraying device of the present invention belongs to a compound vapor spraying device which is installed in a focused ion beam device which is located in a predetermined position of a sample in an atmosphere in which a focused ion beam is irradiated to the compound vapor. For the tool (please read the notes on the back before filling this page) «# Printed on the paper by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -5- 476978 The second container of A7 and B7, and the penetration steam is sprayed on the positioned container from the above-mentioned second container and the above-mentioned guide and the article vapor. The above-mentioned sample chamber or all connected steam blasting devices are equipped between the mouths. For its characteristics, please read the notes on the back first.
貪 五、發明說明（） 有：將化合物與大氣遮斷並加以收納 上述第二容器之一部分並將上述化合 器朝外部引導的注射針形狀引導部’ 開閉閥相連通，同時用以將上述化合 置的噴嘴，及收納上述第二容器的第-又具有設於上述開閉閥與上述噴 品的樣品室，或與複數樣品室中之一 第二閥，爲其特徵者。 又，上述噴嘴係與其他複數化合 由各該開閉閥相連通，爲其特徵者。 又，上述第二容器係可看到內部 又，上述第二容器係由導熱性優異之材質所構成’爲 其特徵者。 經濟部智慧財產局員工消費合作社印製 又，上述第一容器係上述引導部安裝於蓋’當將上述 第二容器收納於內部並蓋上述蓋時，則成爲上述引導部插 入在上述第二容器之蓋的構造；當拿起上述第一容器之蓋 時，則成爲上述第二容器從上述第一容器取出的構造’爲 其特徵者。 又，設有藉控制上述第一容器之溫度，可將收納於上 述第二容器之上述化合物的化合物蒸汽發生量成爲所定量 的溫度控制系統，爲其特徵者。 又，上述引導部，噴嘴及閥係以管相連通，該管係被 溫度控制，爲其特徵者。 -6 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 476978 A7 厂 ______ B7 五、發明說明（4 ) 又，上述噴嘴係被溫度控制，爲其特徵者。 又，上述引導部係被溫度控制，爲其特徵者。 又，上述第二容器係具有封口而可封閉上述化合物， 在上述注射針形狀之引導部貫穿該封口，爲其特徵者。 又，至少安裝一種以上此種化合物蒸汽噴鍍裝置，爲 其特徵者。 (實施發明所用之最佳形態） 在第1圖表示使用於本發明之聚焦離子束鏡筒之一例 子。 聚焦離子束鏡筒係主要由離子源部1 ，聚光鏡2，遮 沒電極3，可動光圈4，偏轉電極5，物鏡6所構成，其 他，未圖示，惟有光軸修正電極或非點修正電極等。 作爲離子源，一般使用液金屬鎵。儲存在鎵容器之液 體金屬鎵係在表面張力供應至針狀射極。又，鎵容器，射 極係成爲藉燈絲可加熱。在射極部分係藉一或複數電極施 加有電場，儲在射極部分之鎵被抽出作爲離子束。由於離 子束係對於接地電位施加有大約+ 3 0 k w之高電壓施加 於射極，因此藉由該電場被加速。 離子束係藉由聚光鏡2被聚焦，而藉由物鏡對準在樣 品表面。在第1圖中，表示在三枚電極連接高電壓與接地 電位的阿音子也倫型透鏡，惟此係一例子，其他型式之透 鏡也可以。又將物鏡配置最接近樣品之位置’惟其位置也 可隨著所求之性能、功能加以變更。 本紙張尺度適用中國國家標準（CNS)A4規格(21G x 297公爱）~ (請先閱讀背面之注意事項再填寫本頁) 裝V. Invention Description () There are: an injection needle-shaped guide portion 'opening and closing valve' that shuts off the compound from the atmosphere and stores a part of the second container and guides the above-mentioned coupler to the outside, and is used to combine the above-mentioned It is characterized in that the first nozzle provided with the second container and the first chamber having the second container provided with the on-off valve and the sprayed product, or one of a plurality of sample chambers, are included in the second container. In addition, the above-mentioned nozzle is connected with other plural combination valves by each of the on-off valves, and is characterized in that. The second container can be seen from the inside, and the second container is made of a material having excellent thermal conductivity. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the first container is the guide portion mounted on the lid. When the second container is housed inside and the lid is closed, the guide portion is inserted into the second container. The structure of the cover; when the cover of the first container is taken up, it becomes the structure in which the second container is taken out from the first container. A temperature control system capable of controlling the temperature of the first container to generate a predetermined amount of the vapor of the compound stored in the second container is a characteristic of the temperature control system. In addition, the guide, the nozzle, and the valve system communicate with each other through a tube, and this tube system is characterized by temperature control. -6-This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 476978 A7 Factory ______ B7 V. Description of the Invention (4) In addition, the above nozzles are controlled by temperature, which is their characteristic. In addition, the guide unit is characterized by temperature control. The second container is characterized by having a seal capable of closing the compound, and penetrating the seal through a guide portion in the shape of the injection needle. It is also characteristic that at least one type of compound vapor spraying device is installed. (Best mode for carrying out the invention) Fig. 1 shows an example of a focused ion beam lens barrel used in the invention. The focusing ion beam tube system is mainly composed of an ion source unit 1, a condenser lens 2, a mask electrode 3, a movable aperture 4, a deflection electrode 5, and an objective lens 6. Others, not shown, only optical axis correction electrodes or non-spot correction electrodes Wait. As an ion source, liquid metal gallium is generally used. The liquid metal gallium stored in the gallium container is supplied to the needle emitter under surface tension. In the gallium container, the emitter is heated by the filament. An electric field is applied to the emitter portion by one or more electrodes, and the gallium stored in the emitter portion is extracted as an ion beam. The ion beam is accelerated by the electric field because a high voltage of approximately +30 kw is applied to the ground potential to the emitter. The ion beam is focused by the condenser lens 2 and aimed at the sample surface by the objective lens. In Fig. 1, an Atonon-type lens is shown in which three electrodes are connected to a high voltage and a ground potential, but this is an example, and other types of lenses are also possible. The objective lens is arranged closest to the sample ', but its position can be changed according to the required performance and function. This paper size applies to China National Standard (CNS) A4 specification (21G x 297 public love) ~ (Please read the precautions on the back before filling this page)
I ϋ ϋ ϋ 一：口 V t— n 1 1_1 fl— i_i -ϋ I 經濟部智慧財產局員工消費合作社印製 476978 A7 B7 五、發明說明（5 ) (請先閱讀背面之注意事項再填寫本頁) 在可動光圈4，有複複不同直徑之貫穿孔，藉光圈控 制部1 1控制貫穿孔之位置，來更換使用之貫穿孔。藉將 離子束通過各該貫穿孔，可變更到達樣品之離子束量（亦 即，樣品電流）。又可調整其位置，使貫穿孔之位置與離 子束之中心一致。 遮沒電極3係成爲在兩枚電極間可發生大電場。若在 各電極施加有相同電位（一般係接地電位）時，則離子束 係到達樣品。但是，若在遮沒電極3之各電極施加電位差 大之信號而發生大電場時，則離子束係偏轉變大，碰到可 動光圏4等之遮蔽物，離子束係不會到達樣品。 偏轉電極5係至少由對向之兩電極所形成之兩組電極 所構成，藉發生在各電極間之電場，離子束之軌道係被二 維地控制。 經濟部智慧財產局員工消費合作社印製 發生被施加於此等各電極，可動光圈4之信號的電源 係藉由電腦被控制。又，施加於遮沒電極3與偏轉電極5 之信號係從掃描信號發生部1 0所發生。由此，藉離子束 之樣品照射位置，可決定是否將射束照射在試料。又，偵 測器之輸出信號係被輸入_在掃描信號發生部1 0並被處理 。離子束之照射位置，與以偵測器偵測在該照射位置藉由 離子束照射所發生之二次荷電粒子，藉一倂記憶作爲電氣 信號之輸出信號，可進行樣品表面之觀察。 在第2圖表示本發明之聚焦離子束裝置之一例子。在 此，例示說明於第1圖之聚焦離子束鏡筒裝設複數於樣品 室2 5之例子。 -8 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 476978 A7 B7 五、發明說明（6 ) 第一聚焦離子束鏡筒2 1係設於離子束對於水平地設 置之樣品2 7垂直地入射的位置。第二聚焦離子束鏡筒 2 2係設置在不同之角度。第2圖之例子係安裝於傾斜 6 0度之位置。如此，設成在裝在樣品台2 6上之樣品 2 7表面能交差各聚焦離子束鏡筒之離子束之中心。 樣品台2 6係至少可朝水平X，Y，及垂直Z之三軸 移動。水平方向X，Y軸係使用於樣品之觀察與加工位置 之決定。又，Z軸係爲了經常將樣品表面之高度’成爲兩 聚焦離子束鏡筒所發射之聚焦離子束之交點位置所必需。 藉將樣品表面之高度成爲聚焦離子束之交點’可將兩聚焦 離子束鏡筒之聚焦離子束照射位置成爲樣品表面之相同位 置。其他，也可具有傾斜T軸與旋轉R軸等。 偵測器2 3係藉聚焦離子束被照射在樣品2 7 ’偵測 發生之二次荷電粒子（電子或離子）° 藉由被裝設於聚焦離子束裝置之化合物蒸汽噴鍍裝置 2 4，進行光束輔助CVD法之薄膜形成。在光束輔助 C V D法中，使用包含沈積在樣品表面之薄膜材料的化合 物蒸汽。化合物蒸汽係藉化合物蒸汽噴鍍裝置2 4被噴鍍 在樣品2 7表面。被噴鍍於樣品表面的化合物蒸汽係被吸 附在樣品表面。在該狀態’當照射聚焦離子束時’藉該運 動能分解化合物蒸汽。分解之氣體成分係藉真空泵2 8被 排至樣品室2 5外’而固體成分係成爲薄膜而被留在樣品 表面。此時，聚焦離子束係與沈積之同時也進行濺鍍蝕刻 。因此，必須控制化合物蒸汽之導入量與聚焦離子束之照 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -9 - ---^-----II -------I — — — (請先閱讀背面之注意事項再填寫本頁) 476978 A7 _B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（7 ) 射量，使依沈積之薄膜形成速度比濺鍍蝕刻之加工速度快 〇 又，藉由化合物蒸汽噴鍍裝置2 4被導進樣品室2 5 之化合物蒸汽，係藉與聚焦離子束照射之同時噴鍍在試料 表面，提高濺鍍蝕刻之加工速度的蝕刻輔助氣體也可以。 蝕刻輔助氣體係一般與藉由聚焦離子束照射而被濺鍍 之被加工物化學地反應，藉形成與被加工物結合之分子氣 體，藉由真空泵2 8被排出至樣品室2 5之外。 平常微細地觀察濺鍍蝕刻加工時，藉濺鍍蝕刻加工之 被加工物掉在試料表面而再附著，必須重複進行濺鍍蝕刻 〇 然而，藉使用蝕刻輔助氣體，由於可抑制再附著，因 此，可縮短依濺鍍加工的加工時間。又，一般，由於蝕刻 輔助氣體係與特定物質進行化學反應，因此利甩具化學反 應之物質與未具化學反應之物質的加工速度之不同的選擇 蝕刻也有可能。又，與特定試料反應，抑制濺鍍蝕刻加工 之進展之氣體也眾知。利用依材料之加工速度之不同的選 擇蝕刻也可能。 又，在圖僅描繪一化合物蒸汽噴鍍裝置2 4，惟隨著 目的之氣體區分使用，故使用複數化合物蒸汽噴鍍裝置也 可以。 樣品室2 5及聚焦離子束鏡筒係藉由真空泵2 8被E 空排氣。又，雖未圖示，惟不必將樣品室2 5成爲大氣’ 也可設置進行樣品之進出所用的裝載鎖定室。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -10- (請先閱讀背面之注意事項再填寫本頁) 丨#· 骏 d^T· 476978 A7 B7 五、發明說明（8 ) 以下，說明表示於第3圖之本發明的化合物蒸汽噴鍍 裝置。 (請先閱讀背面之注意事項再填寫本頁) 化合物蒸汽原料3 5係被儲在第二容器3 2。第二容 器3 2係設於第一容器3 1。 第二容器3 2係藉由第一容器3 1之加熱器3 3 ，及 測定第二容器3 2之溫度的溫度感測器（未圖示），及溫 度調節器（未圖示）被控制溫度。 在第二容器3 2，插入有附著於第一容器3 1之引導 部的注射針。 在第二容器3 2所發生的化合物蒸汽係經由注射針之 管與連接於該管之管而至噴嘴。 在途中具有閥，藉視需要成爲開閉閥，而在不需要之 化合物蒸汽時可噴鍍在樣品表面。 閥之操作係以裝置控制電腦7來進行。在閥前端，經 由管具有噴嘴。噴嘴係雖未圖示惟成爲其長度能變更其長 度。 經濟部智慧財產局員工消費合作社印製 當將化合物蒸汽噴鍍在樣品表面時，爲了將化合物蒸 汽有效率地噴鍍於樣品表面使噴嘴前端接近於樣品表面。 又，不需要將化合物蒸汽噴鍍在樣品表面時，則使噴嘴前 端成爲從樣品表面遠離。又，一面將化合物蒸汽噴鍍在樣 品表面時，則在決定加工領域之觀察階，噴嘴之位置係成 爲與加工時相同之位置。此乃藉噴嘴之位置，避免樣品表 面近旁之電場變化，或聚焦離子束之照射位置變化。 一般化合物係在比室溫高之溫度成爲蒸汽，而將加熱 -11 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 476978 A7 B7 _ 五、發明說明（9 ) 器3 3加以圖示。此時，若管，閥’噴嘴等之溫度較低時 ，有化合物蒸汽會在此等部位被析出之虞。如此，將此等 場所與第一容器3 1同樣地藉由加熱器施以加熱。 又，蒸汽壓高者爲化合物蒸汽原料時，則在室溫下所 發生之化合物蒸汽量有察可增多之情形。此時，將第一容 器3 1之加熱器作成冷卻裝置，以控制比室溫低之溫度。 供給於樣品表面之化合物蒸汽量，係過多或過少均無 法進行所期望之加工。如此，藉選擇溫度及噴嘴之孔徑等 使之最適當化。又，若移動樣品台2 6 ，則可將樣品表面 與來自噴嘴調整成最適當。 又在第3圖雖未圖示，惟可設置第二閥。第二閥係位 在噴嘴與閥之間，可開閉與樣品室之間。若噴嘴之孔徑過 小，則化合物蒸汽有滯留在噴嘴與閥3 4之間之虞。 此時，由於需費時地將化合物蒸汽放出至樣品室，因 此化合物蒸汽在原來未意圖時噴鍍在樣品表面，而出現其 影響。 如此，在完成使用化合物蒸汽之加工後才打開第二閥 。由於第二閥係具有比噴嘴更大之孔徑，因此，化合物蒸 汽經由樣品室以真空泵排至噴嘴與閥3 4之間的管。由此 ，可避免先前之問題。 在第4圖係表示第一容器3 1與第二容器3 2之更詳 細圖。 第二容器係由：容器本體4 4，及具孔徑部之蓋4 2 ，及固定蓋4 2時夾在容器本體4 4與蓋4 2之間的封口 (請先閱讀背面之注意事項再填寫本頁) 裝 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -12- 經濟部智慧財產局員工消費合作社印製 476978 A7 B7 五、發明說明（） 4 2所構成。在第一容器之蓋4 1附有注射針4 5。注射 針4 5之管係通過蓋而連接於第一容器本體4 7之管。又 ，在第一容器之蓋4 1具有夾住第二容器之機構。由此， 第二容器係藉拿起％ —谷器之盡’而可從第一^容器拉出。 又，第二容器係透明容器較理想。由此，可確保化合 物蒸汽原料之殘留量。又，第二容器係由導熱常數高之材 質所構成較理想。由此，可將第二容器內溫度坡度成爲沒 有之狀態。 在第5圖表示連接保管複數化合物蒸汽原料的原料容 器之例子。 在噴嘴分別經由閥5 4連接有原料容器。各該原料容 器係在化合物蒸汽原料以最適當溫度被控制溫度。此時， 噴嘴或管也被控制溫度，惟被控制溫度成不會析出化合物 蒸汽原料。 又，由於注射針係可減小第二容器內之溫度坡度。因 此進行控制溫度也可以。 沈積或蝕刻加工所必需之化合物蒸汽，係藉開閉連接 該化合物蒸汽原料之容器與噴嘴之閥5 4，進行化合物蒸 汽噴鍍在樣品表面。此時，爲了避免藉由混有複數化合物 蒸汽而發生任何反應之情形，連接於原料容器之閥5 4係 成爲不會同時地打開者。 若完成第一化合物蒸汽之噴鍍，則藉由連接於樣品室 之閥5 2，從噴嘴排出滯留於管之化合物蒸汽，使之不會 有殘留之情形。充分地排出所留下之化合物蒸汽之後，關 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -13 - (請先閱讀背面之注意事項#)填寫本頁)I ϋ ϋ ϋ 1: Vt—n 1 1_1 fl— i_i -_ I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 476978 A7 B7 V. Description of the invention (5) (Please read the precautions on the back before filling in this Page) In the movable iris 4, there are multiple through-holes with different diameters, and the position of the through-holes is controlled by the aperture control section 11 to replace the used through-holes. By passing an ion beam through each of the through holes, the amount of the ion beam reaching the sample (that is, the sample current) can be changed. The position can be adjusted so that the position of the through hole is consistent with the center of the ion beam. The shielding electrode 3 is such that a large electric field can be generated between the two electrodes. If the same potential (generally ground potential) is applied to each electrode, the ion beam reaches the sample. However, if a large electric field is generated when a signal having a large potential difference is applied to each of the electrodes of the shield electrode 3, the ion beam system will undergo a large partial shift, and when it comes to a shield such as a movable beam 4, the ion beam system will not reach the sample. The deflection electrode 5 is composed of at least two sets of electrodes formed by two opposite electrodes. The orbit of the ion beam is controlled two-dimensionally by an electric field occurring between the electrodes. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The power of the signal applied to these electrodes and the movable aperture 4 is controlled by a computer. The signals applied to the shielding electrode 3 and the deflection electrode 5 are generated from the scanning signal generating section 10. Therefore, depending on the sample irradiation position of the ion beam, whether to irradiate the beam to the sample can be determined. The output signal of the detector is inputted to the scan signal generator 10 and processed. The irradiation position of the ion beam and the detection of the secondary charged particles generated by the ion beam irradiation at the irradiation position with the detector can observe the sample surface by using a memory as the output signal of the electrical signal. An example of a focused ion beam apparatus according to the present invention is shown in FIG. Here, an example in which a plurality of focused ion beam barrels are installed in the sample chamber 25 as shown in FIG. 1 is illustrated. -8-This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 476978 A7 B7 V. Description of the invention (6) First focusing ion beam tube 2 1 is set at a position where the ion beam is incident perpendicularly to the sample 2 which is set horizontally. The second focusing ion beam barrel 22 is arranged at different angles. The example in Fig. 2 is installed at an angle of 60 degrees. In this way, the surface of the sample 2 7 mounted on the sample stage 26 can intersect the center of the ion beam of each focused ion beam lens barrel. The sample stage 26 can move at least three axes of horizontal X, Y, and vertical Z. The horizontal X and Y axes are used to determine the observation and processing position of the sample. In addition, the Z-axis system is necessary in order to always make the height of the sample surface 'the position of the intersection of the focused ion beams emitted by the two focused ion beam barrels. By using the height of the sample surface as the intersection of the focused ion beam ', the irradiation position of the focused ion beam of the two focused ion beam barrels becomes the same position on the sample surface. Others may include an inclined T-axis and a rotating R-axis. Detector 2 3 is illuminated by a focused ion beam on the sample 2 7 'to detect the occurrence of secondary charged particles (electrons or ions) ° By a compound vapor deposition device 2 4 installed in a focused ion beam device, Film formation by beam-assisted CVD. In the beam-assisted CVD method, a compound vapor containing a thin film material deposited on a sample surface is used. The compound vapor was sprayed on the surface of the sample 2 7 by the compound vapor spraying device 2 4. The vapor of the compound sprayed on the surface of the sample is adsorbed on the surface of the sample. In this state, 'when a focused ion beam is irradiated', the compound vapor is decomposed by this kinetic energy. The decomposed gas component is discharged out of the sample chamber 25 by the vacuum pump 28, and the solid component becomes a thin film and is left on the surface of the sample. At this time, the focused ion beam system and the deposition are simultaneously sputter-etched. Therefore, the amount of compound vapor introduced and the focused ion beam must be controlled. The paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) -9---- ^ ----- II --- ---- I — — — (Please read the notes on the back before filling out this page) 476978 A7 _B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (7) The amount of radiation, so that the film formed by deposition The speed is faster than the processing speed of sputtering etching. Furthermore, the compound vapor introduced into the sample chamber 25 by the compound vapor spraying device 24 is sprayed on the surface of the sample at the same time as the focused ion beam is irradiated to improve the sputtering. An etching assist gas at an etching processing speed may be used. The etching assisting gas system generally chemically reacts with a workpiece to be sputtered by irradiation with a focused ion beam, and by forming a molecular gas bound to the workpiece, it is discharged out of the sample chamber 25 by a vacuum pump 28. When the sputtering etching process is usually observed finely, the workpiece to be processed by the sputtering etching process is dropped on the surface of the sample and then adhered. Sputter etching must be repeated. However, by using an etching auxiliary gas, re-attachment can be suppressed. Therefore, Can shorten the processing time of sputtering process. In addition, in general, since the etching assist gas system chemically reacts with a specific substance, it is also possible to select an etching method that uses a different processing speed between a chemically reactive substance and a non-chemically reactive substance. In addition, a gas which reacts with a specific sample and suppresses the progress of the sputtering etching process is also known. It is also possible to use selective etching depending on the processing speed of the material. Although only one compound vapor deposition apparatus 24 is shown in the figure, it is possible to use a plurality of compound vapor deposition apparatuses depending on the intended gas. The sample chamber 25 and the focused ion beam lens barrel are evacuated by E air by a vacuum pump 28. Also, although not shown, a load lock chamber for carrying in and out of the sample may be provided without the sample chamber 25 having to be atmospheric. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) -10- (Please read the precautions on the back before filling this page) 丨 # 骏 d ^ T · 476978 A7 B7 V. Description of the invention (8) Hereinafter, the compound vapor deposition apparatus of the present invention shown in FIG. 3 will be described. (Please read the precautions on the back before filling out this page) The compound steam raw material 3 5 is stored in the second container 3 2. The second container 3 2 is provided in the first container 31. The second container 3 2 is controlled by a heater 3 3 of the first container 31 and a temperature sensor (not shown) and a temperature regulator (not shown) that measure the temperature of the second container 32. temperature. In the second container 32, an injection needle attached to a guide portion of the first container 31 is inserted. The vapor of the compound generated in the second container 32 passes through the tube of the injection needle and the tube connected to the tube to the nozzle. There is a valve on the way, which can be an on-off valve if necessary, and can be sprayed on the surface of the sample when the compound vapor is not needed. The valve operation is performed by a device control computer 7. At the front end of the valve, the via has a nozzle. Although the nozzle is not shown, its length can be changed. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. When the compound vapor is sprayed on the sample surface, the nozzle tip should be close to the sample surface in order to efficiently spray the compound vapor on the sample surface. When it is not necessary to spray the compound vapor on the sample surface, the tip of the nozzle is kept away from the sample surface. In addition, when the compound vapor is sprayed on the surface of the sample, the position of the nozzle is determined to be the same position as that in processing when determining the observation stage of the processing area. This is to avoid the change of the electric field near the sample surface or the irradiation position of the focused ion beam by the position of the nozzle. General compounds become steam at a temperature higher than room temperature, and will be heated -11-This paper size applies Chinese National Standard (CNS) A4 (210 X 297 public love) 476978 A7 B7 _ V. Description of the invention (9) 3 3 Graphically. At this time, if the temperature of the pipe, valve 'nozzle, etc. is low, the compound vapor may be precipitated in these parts. In this way, these places are heated by a heater in the same manner as the first container 31. In addition, when the vapor pressure is high as the compound vapor raw material, the amount of the compound vapor generated at room temperature may be increased. At this time, the heater of the first container 31 is made a cooling device to control the temperature lower than the room temperature. The amount of compound vapor supplied to the surface of the sample is too large or too small to perform the desired processing. In this way, the temperature and the orifice diameter of the nozzle are selected to optimize them. When the sample stage 26 is moved, the surface of the sample and the nozzle can be adjusted to the optimum. Although not shown in FIG. 3, a second valve may be provided. The second valve system is located between the nozzle and the valve, and can be opened and closed to the sample chamber. If the orifice diameter of the nozzle is too small, the compound vapor may stay between the nozzle and the valve 34. At this time, since it takes time to release the compound vapor to the sample chamber, the compound vapor is sprayed on the surface of the sample when it was not originally intended, and its influence occurs. In this way, the second valve is opened after the processing using the compound vapor is completed. Since the second valve system has a larger pore diameter than the nozzle, the compound vapor is discharged by a vacuum pump through the sample chamber to a tube between the nozzle and the valve 34. In this way, previous problems can be avoided. Fig. 4 is a more detailed view of the first container 31 and the second container 32. The second container is composed of the container body 4 4 and the cover 4 2 with an aperture portion, and the seal sandwiched between the container body 4 4 and the cover 4 2 when the cover 4 2 is fixed (please read the precautions on the back before filling in (This page) Printed on the paper printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. This paper is printed in accordance with the Chinese National Standard (CNS) A4 (210 X 297 mm). 2. Description of the invention () 4 2 constitutes. An injection needle 45 is attached to the lid 41 of the first container. The tube of the injection needle 45 is connected to the tube of the first container body 47 through a cap. The cover 41 of the first container has a mechanism for sandwiching the second container. As a result, the second container can be pulled out of the first container by picking up the end of the bowl. The second container is preferably a transparent container. As a result, the residual amount of the compound vapor raw material can be ensured. The second container is preferably made of a material having a high thermal conductivity. As a result, the temperature gradient in the second container can be made non-existent. Fig. 5 shows an example of a raw material container connected to store a plurality of compound vapor raw materials. A raw material container is connected to each of the nozzles via a valve 54. Each of the raw material containers is controlled at the optimum temperature for the compound vapor raw material. At this time, the temperature of the nozzle or the tube is also controlled, but the temperature is controlled so as not to precipitate the compound vapor raw material. Moreover, the temperature gradient in the second container can be reduced due to the injection needle system. Therefore, it is also possible to control the temperature. The compound vapor necessary for the deposition or etching process is formed by spraying the compound vapor spray on the surface of the sample by opening and closing the container 54 and the nozzle valve 54 of the compound vapor raw material. At this time, in order to avoid any reaction caused by mixing a plurality of compound vapors, the valves 5 to 4 connected to the raw material container are not opened simultaneously. When the first compound vapor spraying is completed, the compound vapor retained in the tube is discharged from the nozzle through the valve 52 connected to the sample chamber, so that there is no residue. After fully exhausting the remaining compound vapors, the paper size is subject to the Chinese National Standard (CNS) A4 (210 X 297 mm) -13-(Please read the precautions on the back #) and fill in this page
476978 A7 B7 五、發明說明（11) 閉連接於樣品室之閥5 2，爲了將第二化合物蒸汽噴鍍在 樣品表面打開閥5 4內所對應之閥。 (請先閱讀背面之注意事項再填寫本頁) 又，藉由化合物蒸汽之種類，也有混合複數化合物蒸 汽加以使用之情形。 (產業上之利用可能性） 如以上詳細地說明，藉本發明，成爲可將化合物蒸汽 原料裝入在第二容器之具有球形單元等設備之處所。例如 在聚焦離子束裝置製造廠或化合物蒸汽原料製造廠將化合 物蒸汽原料裝入在第二容器，藉供給於聚焦離子束裝置使 用者，聚焦離子束裝置使用者係不會將化合物蒸汽原料灑 落在周圍，成爲可處理之狀態。 (圖式之簡單說明） 第1圖係表示聚焦離子束鏡筒之說明圖。 第2圖係表示聚焦離子束裝置之例子。 第3圖係表示本發明之說明圖。 第4圖係表示本發明之說明圖。 經濟部智慧財產局員工消費合作社印製 第5圖係表示本發明之說明圖。 (記號之說明） 1 離子源部 2 聚光鏡 3 遮沒電極 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） -14 - 476978 A7 _B7 五、發明說明（12 ) 4 可動光圈 5 偏轉電極 6 物鏡 7 裝置控制電腦 8 離子源控制電源 9 透鏡電源 10 掃描信號發生部 11 光圈控制部 12 透鏡電源 21 第一聚焦離子束鏡筒 22 第二聚焦離子束鏡筒 2 3 偵測器 2 4 化合物蒸汽噴鍍裝置 2 5 樣品室 2 6 樣品台 2 7 樣品 2 8 真空泵 3 1 第一容器 經濟部智慧財產局員工消費合作社印製 32 第二容器 3 3 加熱器 3 4 閥 3 5 化合物蒸汽原料 3 6 管 3 7 噴嘴 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -15 - 476978 A7 B7 發明說明 ( 13 ) 4 1 第 一 容 器 之 蓋 4 2 第 二 容 器 之 芸 -tTTL 4 3 封 □ 4 4 第 二 容 器 本 體 4 7 第 —- 容 器 本 體 5 2 ， 5 4 閥 (請先閱讀背面之注意事項再填寫本頁) #!裝 % 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 16-476978 A7 B7 V. Description of the invention (11) The valve 5 2 connected to the sample chamber is closed. In order to spray the second compound vapor on the sample surface, the corresponding valve in the valve 5 4 is opened. (Please read the precautions on the back before filling out this page.) Depending on the type of compound vapor, there may be cases where multiple compound vapors are mixed and used. (Industrial Applicability) As described in detail above, the present invention makes it possible to place a compound vapor raw material in a second container having a spherical unit and other equipment. For example, the compound vapor raw material is loaded into a second container at a focused ion beam device manufacturing plant or a compound vapor raw material manufacturing plant. By supplying the compound vapor raw material to a user of the focused ion beam device, the user of the focused ion beam device does not spill the compound vapor raw material on The surroundings can be handled. (Brief description of the drawings) Fig. 1 is an explanatory diagram showing a focused ion beam lens barrel. Fig. 2 shows an example of a focused ion beam device. Fig. 3 is an explanatory diagram showing the present invention. Fig. 4 is an explanatory diagram showing the present invention. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 5 is an explanatory diagram showing the present invention. (Explanation of symbols) 1 Ion source part 2 Condenser 3 Mask electrode The paper size is applicable to China National Standard (CNS) A4 (210 X 297 public love) -14-476978 A7 _B7 V. Description of the invention (12) 4 Movable aperture 5 Deflection electrode 6 Objective lens 7 Device control computer 8 Ion source control power supply 9 Lens power supply 10 Scanning signal generation section 11 Aperture control section 12 Lens power supply 21 First focusing ion beam lens barrel 22 Second focusing ion beam lens barrel 2 3 Detector 2 4 Compound vapor spraying device 2 5 Sample chamber 2 6 Sample stage 2 7 Sample 2 8 Vacuum pump 3 1 First container Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 32 Second container 3 3 Heater 3 4 Valve 3 5 Compound Steam material 3 6 Tube 3 7 Nozzle This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) -15-476978 A7 B7 Description of the invention (13) 4 1 First container lid 4 2 Second container Zhiyun-tTTL 4 3 Seal □ 4 4 The second container body 4 7 The —- container body 5 2, 5 4 valve (please read the precautions on the back before filling this page) #! 装% Ministry of Economy Printed by the Intellectual Property Bureau's Consumer Cooperatives This paper is sized for China National Standard (CNS) A4 (210 X 297 mm) 16-