472279 A7 B7 五、發明說明（1 ) 【發明之技術領域】 本發明是有關利用於微細加工技術（使用掃描探針顯 微鏡）的圖案描繪裝置，及圖案描繪方法。 (請先閱讀背面之注意事項再填寫本頁} 【發明之背景】 隨著半導體電子元件的高積體化，記錄媒體的高密度 化，而必須要有極微細加工技術。但，就電子元件而言， 光學微影成像術所使用的光波長及透鏡材料所能進行的最 小加工尺寸限於1 0 0 n m程度，且就記錄媒體而言，在 雷射原版的記錄裝置中解像度列®會減少。近年來取而代 之，例如有記載於3.(1!.]^1111661&1.、;.喊么131^&1^〇11(^0.1(111 metal oxide semiconductor field -ct transistorf花 ppl.Phys. .丨472279 A7 B7 V. Description of the Invention (1) [Technical Field of the Invention] The present invention relates to a pattern drawing device and a pattern drawing method using a microfabrication technology (using a scanning probe microscope). (Please read the notes on the back before filling in this page} [Background of the invention] As semiconductor electronic components become more integrated and recording media becomes denser, extremely fine processing technology is required. However, electronic components In terms of optical lithography, the wavelength of light used and the minimum processing size of the lens material are limited to about 100 nm, and as far as the recording medium is concerned, the resolution column ® in the laser recording device will be reduced. It has been replaced in recent years. For example, it is described in 3. (1!.] ^ 1111661 &1.,;. Chant? 131 ^ & 1 ^ 〇11 (^ 0.1 (111 metal oxide semiconductor field -ct transistorf flower ppl.Phys .. 丨
Lett.66(6)February 1995 pp.703-705,或 Hyongsok T.Soh et al., "Fabrication of lOOnm pMOSFETs with Hybrid AFM/ST M Lithography〃( 1 997 SYMPOSIUM ON VLSI TECHNOLOGY )之使用掃描探針顯微鏡的微細加工技術。這是一般在探針 與基板間施加電壓而進行加工之方法，解像度高，且原理 上可進行原子水準的加工。 經濟部智慧財產局員工消費合作社印製 又，如美國專利第5，666，190號所揭示，是 屬一種具備複數個懸臂之微影成像系統者。 【發明之慨要】 將掃描探針顯微鏡使用於描繪裝置時，爲了使從探針 往基板的照射線量保持一定，而必須控制施加於探針-基 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 472279 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（2) 板間的電壓。但由於此控制中進行閉迴路控制之反餽處理 ，因此不適於高速處理。又，由於實際上針對探針-基板 間的浮動電容之充放電電流會流動於妨礙控制的方向，因 此處理速度會變得更慢。如此一來，頻繁地重複電流的 〇N / 0 F F狀態而來描繪複雜的圖形時，必須花費更龐 大的時間。 本發明主要是著眼於描繪距離較短時，即使不進行反 餽控制而只施加一定的電壓，依然可使從探針往基板的照 射電流幾乎保持一定的電壓。亦即，事先施以反餽處理， 然後測定記憶起可取得所期望的照射電流之電壓値，而使 實際描繪時不施以反餽，只進行記憶電壓値的Ο N / OFF。 此情況，由於反餽處理只要在每個預定的描繪距離進 行1次即可，因此與經常需要進行反餽處理的習知方法相 較下，能夠大幅度地縮短時間。又，將該方法利用於使用 複數個探針的描繪裝置中時，由於不需要同時控制各個探 針的電流値，因此不必要複雜的控制系，而使能夠進行更 高速的描繪。 【供以實施發明之最佳形態】 (實施例1 ) 以下，利用第1 ，2及3圖來說明本實施例之使用1 根探針在光阻劑膜上進行描繪的圖案描繪裝置例。第1圖 是表示本發明之圖案描繪裝置的實施例構成槪念方塊圖。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----— ！-裝---11!訂-! ---線 (請先閱讀背面之注意事項再填寫本頁) 472279 A7 B7 五、發明說明（） (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 描繪頭部1之導電性的探針2是經由導電性的彈簧部3來 連接於夾具4，被描繪部5 (由塗怖光阻劑層8及導電層 7的基板6所構成）會對向於探針2，且被描繪部5是固 定於Z驅動部9及XY驅動部10，可藉探針2來掃描被 描繪部5的面內方向及垂直方向。又，XY驅動部1 〇是 連接於Z粗動部1 1 ’可使探針2對被描繪部5粗略移動 於垂直方向。又’導電層7是與電流檢測部1 3連接，在 此從探針2通過光阻劑層8而流動的電流會被檢測出，且 藉由控制部1 2來調整從電壓施加部1 4施加於探針2的 電壓，而使能夠形成所期望的電流値。此刻的電壓値會暫 時記憶於電壓記憶部1 5，使得以在往後利用該値。又， 彈簧部3會與位置檢測部1 6連接，在此來自探針2之光 阻劑層8的垂直方向的相對位置或施加於兩者的力量會被 檢測出，藉由控制部1 2來調整驅動部9的Z方向位移， 而使探針2能夠處於預定的位置。並且，控制部1 2會使 X Y驅動部1 0位移，而使探針2能夠移動於光阻劑層8 的面內。而且，由輸入部1 7來將預定的圖案資料讀入控 制部1 2，藉此而能夠對應於圖案資料來控制探針2的位 置及電流値。 其次，將說明有關利用第1圖的裝置來進行圖案描繪 時的動作。首先，爲了使探針2與光阻劑層8接觸，而藉 由Z粗動部1 1來使兩者粗步接近。在非常接近後，利用 位置反餽迴路（由位置檢測部1 6，控制部1 2，Z驅動 部9所構成）來自動控制探針2的垂直方向位置。又，藉 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作杜印製 472279 A7 B7 五、發明說明（4) 由輸入部1 7來讀入圖案資料，且控制部1 2會根據該圖 案資料來控制探針2的位置及電流値。以下，利用第2圖 來加以說明。第2 ( a )圖爲二次元圖案資料例。資料的 各位元是表示電流的Ο N / 0 F F狀態，資料的位置是表 示光阻劑層8上的探針4 0 a — 4 0 d座標。在此，以黑 色來表示ON位元2 0，以白色來表示OFF位元2 1。 第2 (b)圖是表示描繪時之光阻劑層上8的探針2動作 。控制部1 2雖是根據圖案資料來進行光概掃描的描繪， 但實際上是另外設置與描繪領域2 3 (描繪所期望的圖案 )不同之供以事先求取描繪電壓的電壓取得領域2 2。該 電壓取得領域2 2會在各掃描線2 4的起始使電流反餽迴 路（由電流檢測部1 3，控制部1 2及電壓施加部1 4所 構成）形成◦ N狀態，然後一邊進行探針4 1 a的掃描， 一邊測定電壓値，並將該電壓値記憶於電壓記憶部1 5。 一旦探針2進入描繪領域2 3中，則會使電流反餽形成 〇 F F狀態而進行掃描，當探針2位在對應於圖案資料之 各0 N位元2 0的描繪位置時，會以預定的時間施加記憶 於電壓記憶部1 5的電壓値，又，當探針2位在對應於 〇 F F位元2 1的位置時，不施加電壓或施加電流流動之 臨界値以下的電壓。藉由在各掃描線2 4中進行上述動作 來描繪圖案。 圖案資料並非一定要以第2 ( a )圖所示ON/ OF F的1位元來表現之，亦可以複數位元來表現之，而 使對應各數値不同的電流値。此情況，會在電壓取得領域 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------裳--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 472279 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 2 2中測定對應於各電流値的電壓値，且記憶於電壓記憶 部1 5中。又，電壓取得領域2 2的電壓値測定，並非一 定要以各掃描線2 4爲單位來進行，亦可一次對複數條的 掃描線2 4進行，或對各掃描線2 4進行複數次。電壓取 得領域2 2可位於光阻劑層8表面的任何地方，但最好是 儘可能位於描繪領域2 3近旁。又，由於電壓取得領域 2 2內的電壓値測定亦可在使用過的領域進行，因此可縮 小電壓取得領域2 2的面積。 在第2 ( a )圖所示的圖案資料中，雖是使各資料位 置對應於探針2的位置，但亦可在圖案資料內使用與電流 資料同時記述探針2的座標者，而藉由向量掃描來進行描 繪。具體而言，圖案資料是使用排列供以描繪電流値資料 與探針2的始點及終點座標資料的組合之順序者。探針2 會一邊施加對應於圖案資料所賦予的電流値的電壓，一邊 從始點移動至終點，而藉由重複此動作來描繪所期望的圖 案。 在電壓取得領域2 2中，有可能會因光阻劑層8的狀 態或探針2的狀態等影響，而無法取得正確的電壓値。此 情況會造成掃描線2 4上的描繪無法適切地進行。爲了防 止情況發生，複數次進行電壓取得領域2 2之各掃描線 2 4上的電壓測定，並將複數個電壓値記憶於電壓記憶部 1 5中。然後’重新依次飾選這些電壓値，而不使用超過 事先設定的標準電壓値的範圍者’一直到能夠取得適切的 電壓値爲止。若全體的電壓値皆不適當’則使用記憶於電 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------1!_ 33^ ---11 訂·------- (請先閱讀背面之注意事項再填寫本頁) 472279 A7 ___B7 五、發明說明（6 ) 壓記憶部1 5之前次掃描線1 4中所使用過的電壓値。如 此一來，將能夠進行可靠度非常高的描繪。 就本實施例而言’是利用壓電元件及來自控制部1 2 的電壓信號來調節Z驅動部9及X Y驅動部1 〇的位移。 在此，Z粗動部1 1的機構是使用步進馬達與測微頭，但 亦可利用槓桿式等之方法。又’由於z驅動部9 ’ X Y驅 動部1 0及Z粗動部1 1是相對使描繪頭部1與被描繪部 5移動者，因此皆可位於任一側。又，位置檢測部1 6的 位置檢測是利用彈簧部3所產生的雷射光反射來進行。 基板6爲玻璃製’蒸鍍厚度2 0 nm〜1 〇 〇 nm的 鉻（C r )來作爲導電層，且塗怖厚度約1 0 nm〜 1 0 0 nm的光阻劑層8 (例如，聚（乙烯苯酚）與迭氮 基的混合光阻劑之負片型光阻劑（日立化成工業株式會社 製RD2100N))。又，使用於光阻劑層8的光阻劑 ，亦可爲漆用酚醛系苯酚樹脂與感光劑的混合光阻劑，化 學增幅系光阻劑，聚甲基丙烯酸甲基等之光阻劑。又，基 ( II-------I - -------—訂---I I — 11 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 由電電性亦 3 結 ， 導的電雖 1 單 況。2 導。部L·0以 情 7 針有可測流來 此層探具即檢«術 。 電於 6 6 流!ItB技 料導加板板電^工 材略施基基將Μ加 意省據若於須Μ 細 任可根。接況2iff微 的亦可流連情+ 用 後此，電接此^1利 工因接的直但K·如 加，連 8 3 ， 接例 之性 3 層 1 用¾是 等電 1 劑部使起 3 砍導部阻測而 | 部 雜有測光檢地 4 簧 摻具檢於流接 1 彈 用身流動電 7 部及 使本電流將層加 2 可 6 與定要電施針 亦板是測只導壓探 6 基 7 來則使電 板於層壓，可與 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 279 7 4 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 __-__B7 五、發明說明（7) 晶矽一體形成。又’亦可爲氧化矽或氮化矽。又，適當的 探針2前端曲率半徑爲1 〇 nm〜1 0 〇 nm，彈簧部3 的彈簧定數爲0 . 0 5N/m〜5N/m，共振頻率爲 10kHz〜50kHz。又，探針2將藉由蒸鍍厚度 1〇nm〜5 0 nm的鈦來使具有導電性。除了鈦以外， '亦可使用錳’鉬，炭化鈦，炭化錳，炭化鉬，導電性鑽石 等。 以下’利用第3圖來說明基板6表面非平坦，且具有 段差時的描繪方法。第3圖是只取出在此所使用的被描繪 部5者。當基板6的表面上具有段差時，不僅探針2無法 進入段差正下方的領域而進行描繪，甚至探針2會與段差 衝突而受損。在此’爲了減輕基板6的凹凸影響，而於基 板6表面塗怖平坦化層3 0，使其表面平坦化。並且，在 此平坦化層3 0的表面上塗怖與第1圖相同的導電層7及 光阻劑層8。描繪處理是使用與第1圖相同的圖案描繪裝 置及方法，藉由光阻劑層8的顯像來使光阻劑圖案形成於 導電層7上。而且，以該光阻劑圖案作爲光罩，針對導電 層7及平坦化層3 0進行蝕刻而予以去除，藉此來使平坦 化層3 0的圖案形成於基板6上。例如，在已形成圖案的 矽基板6上，以能夠形成厚度3 0 0 nm的方式來旋轉塗 怖光阻劑（例如日立化成工業株式會社製的B L 0 C )， 而形成平坦化層3 0，且於上面蒸鍍P型矽，而形成導電 層7，最後塗怖膜厚4 0 n m的光阻劑（例如日立化成工 業株式會社製的R D 2 1 0 0 N )來作爲光阻劑層8。描 40-- ------!!!-裝— I I I 訂！！ 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 472279 A7 B7 五、發明說明（8) 繪後，使複寫於光阻劑層8的圖案顯像，然後以該光阻劑 圖案作爲光罩，以四氟化炭素氣體來對導電層7進行乾触 刻，及以氧氣來對平坦化層3 0進行乾蝕刻，藉此來將圖 案複寫於基板6上。 本實施例是利用第4圖來說明實際進行描繪的結果。 其中，使用導電性的矽基板來作爲基板6，形成塗怖厚度 5 0 nm的光阻劑RD2 1 0 ON之光阻劑層8，省略導 電層7。在此光阻劑層8上以0 . 1 m m / s的速度使探 針2移動，而使流動於探針2與基板6間的電流設定成 3 0 p A。此刻施加的電壓位於—4 0 V附近。 在光阻劑層6中製作潛像時，探針2爲了作成潛像， 而根據所施加後的電壓來承受作用於探針2 -基板6間的 庫倫力。藉此庫倫力，彈簧部3會變形，而使探針接觸於 光阻劑層8。又，配合所欲作成的圖案，亦有不形成潛像 的部份。由於在不形成潛像的部份不需要電流，因此在此 位置不需要對探針2施加電壓。但，若將電壓設定成〇 v ，則會形成無作用於探針2的庫倫力，因此無彈簧部3的 變形，而使離開光阻劑層8。如此一來，再度施加電壓於 應形成潛像的位置時，庫倫力會突然作用於探針2，而使 得彈簧部3急速變形，因此探針2會激烈碰撞於光阻劑層 8，而導致探針2損壞的可能性增高。因此，在描繪不製 作潛像的部份時’最好是以能夠流動不形成潛像程度的較 小電流之方式來控制電壓。就本實施例而言，若將施加電 壓設定成-2 0 V以下，則電流會形成1 p a以下，潛像 ---—________IX-___ 本紙張尺度適用中國國家標準(CNS)A4規格（21G X 297公釐) ---I ------------111 I 訂·------ (請先閱讀背面之注意事項再填寫本頁) 472279 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 不會形成。在此，是將對應於圖案資料之0 F F位元2 1 的施加電壓値設定爲- 2 Ο V。又，將決定描繪電壓時的 標準電壓範圍設定爲3 0V以上。以第4 ( a )圖所示之 圖形來作爲圖案資料，根據上述條件來進行描繪，且以掃 描電子顯微鏡來觀察浸泡1分鐘於0 . 8 3%的氫氧化碘 化四甲銨（tetramethy ammonium)溶液中而顯像取得的光 阻劑圖案31，其結果如第4(b)圖所示。由圖的左上 至水平方向來進行光柵掃描，而完成描繪。由於在電壓取 得領域3 2中是根據電流反餽處理來使電流値慢慢地設定 成設定値，因此隨著掃描的進行可漸漸地得知描繪的樣子 。在描繪領域3 3中，圖案資料會被複寫於3 0 的領域中。此圖案的最小加工尺寸爲1 0 0 n m。 本發明並非經常施以電流反餽，而是在每個預定的描 繪距離進行，然後求取可取得所期望的電流之電壓値，並 予以記憶起來，而僅以當時記憶電壓値的Ο N / 0 F F切 換來進行描繪，因此能夠提供一種可以高速描繪複雜且微 細的圖案之圖案描繪裝置。又，電壓値的記憶亦可在考量 探針的磨耗下控制成能夠執行於每個漸短的距離。 (實施例2 ) 本實施例是利用5圖來說明在光阻劑膜上使用複數個 探針來進行描繪之圖案描繪裝置例。雖本實施例與第1圖 之實施例的圖案描繪裝置本質上不變，但實際上與第1圖 有所不同，其相異點是一次元配列的複數個導電性探針 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----I--------裝---I! — 訂 i I--I---線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 472279 A7 B7 五、發明說明（w) 4 〇 a — 4 0 d會分別經由複數個彈簧部4 1 a - 4 1 d 來固定於共通的夾具4，且探針4 0 a — 4 0 d會分別獨 立連接於電壓施加部1 4，而使電壓施加部1 4可同時獨 立施加電壓於探針4 0 a - 4 0 d。又’兩端的彈簧部 4 1 a及4 1 d會連接於位置檢測部1 6，藉此與實施例 1的情況同樣的，可檢測出來自探針4 0 a及4 0 d之光 阻劑層8表面的垂直方向位置，根據這些信號來分別使兩 個Z驅動部4 2 a及4 2 b位移，而使所有探針4 〇 a -4 0 d的垂直方向位置調整成所期望的値。在此，兩實施 例共通的部份賦予相同圖號。 其次，將說明有關利用第5圖的裝置來進行圖案描繪 時的動作。首先，與實施例1同樣的，爲了使探針4 0 a 一 4 0 d與光阻劑層8接觸，而藉由Z粗動部1 1來使兩 者粗步接近。在非常接近後，利用兩個獨立的位置反餽迴 路（由位置檢測部1 6，控制部1 2，Z驅動部4 2 a及 4 2 b所構成）來自動控制探針4 0 a及4 0 d的垂直方 向位置。藉此，即使連結探針4 0 a — 4 0 d前端的直線 與光阻劑層8表面不平行，還是可以自動地調整成平行’ 而使探針4 0 a — 4 0 d能夠以幾乎相同的力量來接觸於 光阻劑層8表面。 圖案資料是針對各探針4 0 a — 4 0 d而準備，藉由 輸入部1 7來讀入圖案資料，控制部1 2是根據該圖案資 料來控制探針40 a - 40 d的位置及電流値。第6圖爲 二次元圖案資料的例子。圖案資料5 1 ，5 2 ’ 5 3 +3- --— II---!!敦-------- 訂--------•線 (請先閱讀背面之注意事項再填寫本頁) 472279 五、發明說明（ 5 4分別爲探針4 〇 a 一 4 〇 ci描繪時所使用的資料。與 實施例1同樣的’資料的各位元是表示電流的〇 N/ 〇 F F狀態’資料的位置是表示光阻劑層8上的探針 4 〇 a — 4 0 d座標。在此，是以黑色來表示on位元 20 ’以白色來表示〇ff位元2 1。第7圖是表示描繪 時之光阻劑層上8的探針4 0 a — 4 0 d動作。掃描領域 55 ’ 56 ’ 57 ，58分別爲探針40a — 40d的掃 掃描領域55，56，57，58會分成描 64 ’ 68，72與4個電壓取得領域 b，59c，59d 等。 線6 1 ’ 6 5，6 9，7 3爲開端，當探針 d分別掃描電壓取得領域5 9 a ，5 9 b， d時’會使電流反餽迴路（由電流檢測部 1 2及電壓施加部1 4所構成）形成Ο N狀 經濟部智慧財產局員工消費合作社印製 描領域，且各 繪領域6 0， 5 9 a，5 9 以各掃描 4 0 a - 4 0 5 9 c，5 9 1 3，控制部 態，一邊進行 所望的電流之 1 5。其間探 壓取得領域6 或電流流動之 4 0 d分別掃 7 1 b時，在 0 V或電流流 測定記憶起使 流之電壓値。 探針4 掃描 邊測定電壓値（可取得 ---------111¾^--------訂----II--- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 電壓値），並將該電壓値記憶於電壓記憶部 針41b ，41 c ’ 41d會同時掃描各電 3a ，67a ’ 71a ，但須事先施加〇V 臨界値以下的電壓。其次，在探針4 0 a — 描電壓取得領域59b ，63b ，67b ， 探針41a ’ 41c ，41 d中會事先施加 動之臨界値以下的電壓，然後對探針4 1 b 電流反餽形成Ο N狀態而來取得所期望的電 同樣的針對探針4 1 c ，4 1 d也是重複進 -Μ- 7 4 3279 A7 __B7____ 五、發明說明（12) 行該操作’藉此來測定記憶起各探針4 0 a - 4 0 d在描 繪時所使用的電壓。亦即，分別在5 9 b，6 3 b， (請先閱讀背面之注意事項再填寫本頁) 6 7b ’ 71b求取探針40 a — 40 d所使用的電壓値 。若探針40a— 40d分別進入描繪領域60，64， 6 8，7 2 ’則會使電流反饋形成〇 F F狀態而來進行掃 描，當探針4 0 a — 4 0 d位在對應於圖案資料的ON位 元20之各描繪位置62，66，70，74時，會在預 定的時間施加記憶於電壓施加部1 5中的各電壓値，又， 位在對應於0 F F位元2 1時，不施加電壓或施加電流流 動之臨界値以下的電壓。藉由在各掃描線6 1 ，6 5， 69，73中進行上述動作來描繪圖案。 經濟部智慧財產局員工消費合作杜印製 各探針4 0 a — 4 0 d所描繪的圖案資料並非一定要 如第6圖所示一般屬各相異者，亦可藉複數個探針來描繪 同一圖案資料。又，電壓取得領域並非一定要分割給各探 針，例如僅以探針數量的次數來掃描同一電壓取得領域， 而於每次求取各探針描繪時所使用的電壓。第5圖中雖表 示一次元排列4個探針40a - 40d，但探針的個數並 非只限於此，亦即個數越多描繪的速度越快。又，亦可二 次元排列。此情況，探針之垂直位置控制用的位置檢測是 利用非同一直線上之連接於三個探針的彈簧部來進行’針 對各信號，根據三個獨立的位置反餽來使三個Z驅動部位 移，藉此只要進行探針的垂直位置控制即可。在此’與實 施例1同樣的，若利用第3圖所示之平坦化層3 0來進行 描繪，則即使基板6中具有凹凸’還是可以進行描繪。又 -__+§- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 472279Lett.66 (6) February 1995 pp.703-705, or Hyongsok T. Soh et al., &Quot; Fabrication of lOOnm pMOSFETs with Hybrid AFM / ST M Lithography〃 (1 997 SYMPOSIUM ON VLSI TECHNOLOGY) Microfabrication technology of microscope. This is a general method of processing by applying a voltage between the probe and the substrate. It has high resolution and can be processed at the atomic level in principle. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. As disclosed in US Patent No. 5,666,190, it is a lithography system with a plurality of cantilevered imaging systems. [Summary of the invention] When a scanning probe microscope is used in a drawing device, in order to maintain a constant amount of irradiation from the probe to the substrate, it is necessary to control the application of the probe to the basic paper size-the national paper standard (CNS) A4 applies Specifications (210 X 297 mm) 4 472279 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (2) Voltage between boards. However, it is not suitable for high-speed processing due to the feedback processing of closed-loop control in this control. In addition, since the charge / discharge current for the floating capacitor between the probe and the substrate actually flows in a direction that hinders control, the processing speed becomes slower. In this way, it takes much more time to draw complex graphics by repeatedly repeating the ON / 0 F F state of the current. The present invention is mainly aimed at keeping the voltage of the irradiation current from the probe to the substrate almost constant even when a certain voltage is applied without performing feedback control when the drawing distance is short. That is, the feedback process is performed in advance, and then the voltage 値 that can obtain the desired irradiation current is measured and memorized, so that no feedback is applied during the actual drawing, and only 0 N / OFF of the memory voltage 进行 is performed. In this case, since the feedback processing may be performed only once for each predetermined drawing distance, the time can be greatly reduced compared with the conventional method in which feedback processing is often required. In addition, when this method is applied to a drawing device using a plurality of probes, since it is not necessary to control the current of each probe at the same time, a complicated control system is unnecessary, enabling higher-speed drawing. [Best Mode for Carrying Out the Invention] (Embodiment 1) Hereinafter, an example of a pattern drawing device for drawing a photoresist film using one probe in this embodiment will be described with reference to Figs. 1, 2 and 3. Fig. 1 is a block diagram showing the structure of an embodiment of a pattern drawing device according to the present invention. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) -----—! -Install --- 11! Order-! --- Line (please read the precautions on the back before filling this page) 472279 A7 B7 V. Description of the invention () (Please read the precautions on the back before filling this page) Economy The Intellectual Property Bureau employee consumer cooperative prints the conductive probe 2 depicting the conductivity of the head 1 and is connected to the jig 4 via the conductive spring portion 3. The imaged portion 5 (coated with a photoresist layer 8 and a conductive layer) (Consisting of the substrate 6 of 7) facing the probe 2 and the drawn portion 5 is fixed to the Z driving portion 9 and the XY driving portion 10, and the in-plane direction and vertical of the drawn portion 5 can be scanned by the probe 2 direction. In addition, the XY driving section 10 is connected to the Z coarse movement section 1 1 ', so that the probe 2 can be roughly moved in the vertical direction with respect to the drawing section 5. The conductive layer 7 is connected to the current detection section 1 3, and the current flowing from the probe 2 through the photoresist layer 8 is detected, and the control section 12 adjusts the slave voltage application section 1 4 The voltage applied to the probe 2 enables a desired current to be generated. The voltage at this moment is temporarily stored in the voltage storage section 15 so that the voltage can be used later. In addition, the spring portion 3 is connected to the position detection portion 16, and the relative position in the vertical direction from the photoresist layer 8 of the probe 2 or the force applied to both is detected, and the control portion 1 2 The Z-direction displacement of the driving portion 9 is adjusted so that the probe 2 can be at a predetermined position. In addition, the control section 12 causes the X Y driving section 10 to be displaced, so that the probe 2 can move within the surface of the photoresist layer 8. Further, the input section 17 reads the predetermined pattern data into the control section 12 so that the position and current 探针 of the probe 2 can be controlled in accordance with the pattern data. Next, the operation when pattern drawing is performed using the apparatus of Fig. 1 will be described. First, in order to bring the probe 2 into contact with the photoresist layer 8, the coarse movement portion 11 of the probe 2 is used to approximate the two steps. After very close, a position feedback loop (consisting of the position detection section 16, the control section 12, and the Z driving section 9) is used to automatically control the vertical position of the probe 2. In addition, the size of this paper applies the Chinese National Standard (CNS) A4 (210 X 297 mm). The consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs is made by Du Printing 472279 A7 B7. 5. Description of the invention (4) Read by the input department 17 Enter the pattern data, and the control unit 12 will control the position and current 探针 of the probe 2 according to the pattern data. Hereinafter, it will be described using FIG. 2. Figure 2 (a) is an example of a two-dimensional pattern data. Each element of the data indicates the 0 N / 0 F F state of the current, and the position of the data is the coordinates of the probes 40 a-4 0 d on the photoresist layer 8. Here, the ON bit 2 0 is represented by black, and the OFF bit 21 is represented by white. Fig. 2 (b) shows the operation of the probe 2 on the photoresist layer at the time of drawing. The control unit 12 draws a light scan based on the pattern data, but actually sets a voltage acquisition area different from the drawing area 2 3 (drawing a desired pattern) to obtain a drawing voltage in advance 2 2 . In this voltage acquisition area 22, a current feedback loop (consisting of a current detection unit 13, a control unit 12 and a voltage application unit 14) is formed at the beginning of each scanning line 24, and then the detection is performed. While scanning the needle 4 1 a, the voltage 値 is measured, and the voltage 値 is stored in the voltage storage unit 15. Once the probe 2 enters the drawing area 23, it will scan the current feedback to form a 0FF state. When the probe 2 is located at the drawing position corresponding to each 0 N bit 20 of the pattern data, it will be scheduled. The voltage 记忆 stored in the voltage storage unit 15 is applied at the same time, and when the probe 2 is located at the position corresponding to the 0FF bit 21, no voltage is applied or a voltage below the critical 値 of the current flow is applied. A pattern is drawn by performing the above operation in each scanning line 24. The pattern data does not have to be expressed in 1 bit of ON / OF F shown in Figure 2 (a), but it can also be expressed in multiple bits so that the corresponding currents are different for each number. In this case, in the field of voltage acquisition, this paper size will apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -------------- Shang -------- Order --------- line (please read the notes on the back before filling out this page) 472279 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () 2 The measurement in 2 corresponds to each The voltage 値 of the current 値 is stored in the voltage storage section 15. The measurement of the voltage 値 in the voltage acquisition area 22 is not necessarily performed in units of each scanning line 24, and may be performed on a plurality of scanning lines 24 at a time, or a plurality of times on each scanning line 24. The voltage obtaining area 2 2 can be located anywhere on the surface of the photoresist layer 8, but it is preferably located as close to the drawing area 2 3 as possible. In addition, since the voltage measurement in the voltage acquisition area 22 can also be performed in the used area, the area of the voltage acquisition area 22 can be reduced. In the pattern data shown in Fig. 2 (a), although the position of each data corresponds to the position of the probe 2, it is also possible to use the person who describes the coordinates of the probe 2 at the same time as the current data in the pattern data. Rendering is performed by vector scanning. To be more specific, the pattern data is an order in which a combination of an electric current 値 data and a start point and an end point coordinate data of the probe 2 is arranged to be drawn. The probe 2 moves from the start point to the end point while applying a voltage corresponding to the current 値 given by the pattern data, and repeats this operation to draw a desired pattern. In the voltage obtaining area 22, there may be a case where the correct voltage 値 cannot be obtained due to the influence of the state of the photoresist layer 8 or the state of the probe 2 and the like. This situation prevents the drawing on the scanning line 24 from being performed properly. To prevent this from happening, the voltage is measured on each of the scanning lines 24 in the voltage acquisition area 22 a plurality of times, and a plurality of voltages 値 are stored in the voltage storage unit 15. Then "select these voltages 重新 one after another without using a range exceeding a preset standard voltage’ "until a suitable voltage 能够 can be obtained. If all the voltages are inappropriate, then use the Chinese paper (CNS) A4 size (210 X 297 mm) memorized in the paper size of the book. --------- 1! _ 33 ^ --- 11 Order · ------- (Please read the precautions on the back before filling out this page) 472279 A7 ___B7 V. Description of the invention (6) Press the memory part 1 5 The voltage used in the previous scan line 1 4 value. As a result, highly reliable rendering can be performed. In the present embodiment, the displacement of the Z driving section 9 and the X Y driving section 10 is adjusted using a piezoelectric element and a voltage signal from the control section 12. Here, the mechanism of the Z coarse movement section 11 uses a stepping motor and a micrometer, but a method such as a lever type may also be used. Since the z-driving section 9 ', the X-y driving section 10, and the Z coarse-moving section 11 are relatively moving the drawing head 1 and the to-be-drawn section 5, they can be located on either side. The position detection by the position detection unit 16 is performed by using the laser light reflection generated by the spring unit 3. The substrate 6 is made of glass and has a chromium (C r) thickness of 20 nm to 1000 nm as a conductive layer, and a photoresist layer 8 having a thickness of about 10 nm to 100 nm (for example, A negative type photoresist of a mixed photoresist of poly (vinylphenol) and an azide group (RD2100N manufactured by Hitachi Chemical Industries, Ltd.). In addition, the photoresist used in the photoresist layer 8 may be a photoresist mixed with a phenolic phenol resin and a photosensitizer for lacquer, a chemically amplified photoresist, or a polymethacrylic acid methyl photoresist. . In addition, the basic (II ------- I--------- order --- II-11 (Please read the precautions on the back before filling out this page) Employee Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The printed electricity is also 3 junctions, although the electrical conduction is 1 single condition. 2 conductive. The part L · 0 with a 7-pin measurable current can be detected by the probe in this layer. The electricity is at 6 6 streams! ItB technology Material guide plus board and board ^ Construction materials Slightly S. Kiji saves M and Italy, and can be used as necessary. In the case of 2iff, you can also linger in love + After this, use this ^ 1 Straight but K. Rujia, even 8 3, the nature of the example 3 layer 1 with ¾ is the isoelectric 1 agent to make the 3 choke block resistance and the | part is mixed with photometric detection 4 spring mixed with detection Connect 1 ammunition with 7 electric currents and make the current increase the layer by 2 and 6 and make sure that the electricity is applied to the needle. The board is only tested to guide the pressure. The base 7 is used to laminate the electric board. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 279 7 4 Printed on the paper by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) A7 __ -__ B7 V. Invention (7) Crystal silicon is integrally formed. It can also be silicon oxide or silicon nitride. Also, a suitable tip 2 has a radius of curvature of 10 nm to 100 nm, and the spring number of the spring portion 3 is 0. 0 5N / m ~ 5N / m, resonance frequency is 10kHz ~ 50kHz. In addition, the probe 2 will have conductivity by vapor-depositing titanium with a thickness of 10nm ~ 50nm. In addition to titanium, 'can also be used Manganese, molybdenum, titanium carbide, manganese carbide, molybdenum carbide, conductive diamond, etc. The following description will be made of the drawing method when the surface of the substrate 6 is not flat and there is a step difference using the third drawing. If there is a step on the surface of the substrate 6, not only the probe 2 cannot enter the area directly under the step to perform drawing, but also the probe 2 will collide with the step and be damaged. Here, 'to reduce the substrate The unevenness of 6 is applied, and a flattening layer 30 is coated on the surface of the substrate 6 to flatten the surface. Furthermore, the same conductive layer 7 and photoresist as shown in FIG. 1 are coated on the surface of this flattening layer 30. Layer 8. The drawing process is performed using the same pattern drawing device and method as in FIG. The development of the layer 8 causes a photoresist pattern to be formed on the conductive layer 7. Furthermore, the photoresist pattern is used as a photomask, and the conductive layer 7 and the planarization layer 30 are etched to be removed to remove the photoresist pattern. A pattern of the planarization layer 30 is formed on the substrate 6. For example, on a patterned silicon substrate 6, a photoresist (for example, manufactured by Hitachi Chemical Industry Co., Ltd.) is spin-coated so that a thickness of 300 nm can be formed. BL 0 C), a planarization layer 30 is formed, and a P-type silicon is vapor-deposited thereon to form a conductive layer 7, and a photoresist (for example, manufactured by Hitachi Chemical Industries, Ltd.) is coated with a film thickness of 40 nm. RD 2 1 0 0 N) as the photoresist layer 8. Desc 40------- !!!-装 — I I I Order! !! (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 472279 A7 B7 V. Description of the invention (8) After drawing, make the pattern copied on the photoresist layer 8 develop Then use the photoresist pattern as a photomask, dry-etch the conductive layer 7 with carbon tetrafluoride gas, and dry-etch the planarization layer 30 with oxygen, thereby copying the pattern on the substrate 6 on. In the present embodiment, the results of actual drawing will be described using FIG. 4. Among them, a conductive silicon substrate was used as the substrate 6 to form a photoresist layer 8 with a photoresist RD2 1 0 ON having a thickness of 50 nm, and the conductive layer 7 was omitted. The probe 2 is moved on the photoresist layer 8 at a speed of 0.1 mm / s, and the current flowing between the probe 2 and the substrate 6 is set to 30 pA. The voltage applied at this moment is near -4 0 V. When a latent image is produced in the photoresist layer 6, in order to create a latent image, the probe 2 receives a Coulomb force acting between the probe 2 and the substrate 6 according to the applied voltage. By this Coulomb force, the spring portion 3 is deformed, and the probe is brought into contact with the photoresist layer 8. In addition, there are also parts that do not form a latent image in accordance with the desired pattern. Since no current is required at the portion where the latent image is not formed, no voltage is applied to the probe 2 at this position. However, if the voltage is set to 0 V, a Coulomb force that does not act on the probe 2 is formed, and therefore the spring portion 3 is not deformed, and the photoresist layer 8 is separated. In this way, when a voltage is applied again to the position where the latent image should be formed, the Coulomb force will suddenly act on the probe 2 and cause the spring portion 3 to deform rapidly. Therefore, the probe 2 will collide with the photoresist layer 8 violently, resulting in The possibility of damage to the probe 2 increases. Therefore, when drawing a portion where a latent image is not produced, it is desirable to control the voltage in such a manner that a small current can flow to the extent that a latent image is not formed. In this embodiment, if the applied voltage is set to -20 V or less, the current will form 1 pa or less. The latent image ------- ________ IX -___ This paper size applies the Chinese National Standard (CNS) A4 specification (21G X 297 mm) --- I ------------ 111 I order ------- (Please read the notes on the back before filling this page) 472279 Intellectual Property Bureau, Ministry of Economic Affairs Printed by employee consumer cooperatives A7 B7 V. Invention description () will not be formed. Here, the applied voltage 値 corresponding to 0 F F bit 2 1 of the pattern data is set to -2 0 V. The standard voltage range when determining the drawing voltage is set to 30V or more. Use the figure shown in Figure 4 (a) as pattern data, draw according to the above conditions, and observe with a scanning electron microscope for 1 minute soaking in 0.8% tetramethy ammonium hydroxide (tetramethy ammonium hydroxide) ) The photoresist pattern 31 obtained by developing the solution is shown in FIG. 4 (b). Raster scan is performed from the upper left of the figure to the horizontal direction to complete the drawing. In the voltage acquisition area 32, the current 値 is gradually set to the setting 根据 according to the current feedback processing, so the drawing state can be gradually learned as the scanning progresses. In the drawing field 33, the pattern data will be copied in the field 30. The minimum processing size of this pattern is 100 nm. The present invention does not often apply current feedback, but performs it at each predetermined drawing distance, and then obtains the voltage 値 that can obtain the desired current and memorizes it, and only uses 0 N / 0 of the memory voltage 当时 at that time. FF is switched for drawing, so it is possible to provide a pattern drawing device capable of drawing complex and fine patterns at high speed. In addition, the memory of the voltage 値 can also be controlled to be executed at each gradually shorter distance under consideration of the wear of the probe. (Embodiment 2) This embodiment is an example of a pattern drawing apparatus using a plurality of probes for drawing on a photoresist film using FIG. 5. Although the pattern drawing device of this embodiment and the embodiment of FIG. 1 are essentially unchanged, it is actually different from that of FIG. 1 in that the difference is a plurality of conductive probes arranged in a one-dimensional array. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ---- I -------- install --- I! — Order i I--I --- line (please read first Note on the back, please fill in this page again.) The paper size printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 472279 A7 B7 V. Description of the invention (w) 4 〇 a — 4 0 d will be fixed to the common clamp 4 through a plurality of spring portions 4 1 a-4 1 d, respectively, and the probes 4 0 a — 4 0 d will be independently connected to the voltage application portion 1 4 so that The voltage applying part 14 can simultaneously and independently apply a voltage to the probes 4 a-4 0 d. Furthermore, the spring portions 4 1 a and 4 1 d at both ends are connected to the position detection portion 16, so that the photoresist from the probes 4 0 a and 4 0 d can be detected in the same manner as in Example 1. According to these signals, the vertical position of the surface of the layer 8 is shifted according to these signals, and the vertical positions of all the probes 4 〇a-4 0 d are adjusted to the desired values. . Here, the parts common to the two embodiments are given the same drawing numbers. Next, the operation when drawing a pattern using the device of Fig. 5 will be described. First, in the same manner as in Example 1, in order to bring the probes 40 a to 40 d into contact with the photoresist layer 8, the two coarse steps are brought closer together by the Z coarse moving portion 11. After being very close, two independent position feedback loops (consisting of position detection unit 16, control unit 12 and Z drive unit 4 2 a and 4 2 b) are used to automatically control the probes 4 0 a and 4 0 The vertical position of d. Thereby, even if the straight line connecting the front ends of the probes 40a to 40d is not parallel to the surface of the photoresist layer 8, it can be automatically adjusted to be parallel ', so that the probes 40a to 40d can be almost the same. To come into contact with the surface of the photoresist layer 8. The pattern data is prepared for each of the probes 40 a-4 0 d. The pattern data is read by the input section 17. The control section 12 controls the positions and positions of the probes 40 a-40 d based on the pattern data. Current 値. Fig. 6 is an example of the two-dimensional pattern data. Pattern information 5 1 ， 5 2 '5 3 + 3- --- II --- !! Dun -------- Order -------- • Line (Please read the precautions on the back first (Fill in this page again) 472279 V. Description of the invention (54 are the materials used in the description of the probes 4 〇a-4 〇ci. The same as in Example 1 'Each element of the data is the current 〇N / 〇 The position of the FF state 'data indicates the coordinates of the probes 40a to 40d on the photoresist layer 8. Here, the on bit 20 is represented by black, and the 0ff bit 21 is represented by white. Figure 7 shows the operation of the probes 4 0 a-4 0 d on the photoresist layer at the time of drawing. The scanning areas 55 '56' 57 and 58 are the scanning areas 55, 56 of the probes 40a-40d, respectively. 57, 58 will be divided into 64 '68, 72 and 4 voltage acquisition areas b, 59c, 59d, etc. Line 6 1' 6 5, 6 9, 7 3 is the beginning, when the probe d scans the voltage acquisition areas 5 9 respectively. a, 5 9 b, d 'will cause the current feedback loop (consisting of the current detection unit 12 and the voltage application unit 14) to form 0 N-shaped Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperative printing field, and each drawing Field 6 0 5 9 a, 5 9 Scan 4 0 a-4 0 5 9 c, 5 9 1 3, and control the state, while performing 1 5 of the desired current. During the pressure detection, obtain area 6 or 4 0 d of current flow. When scanning 7 1 b separately, measure the voltage 値 at 0 V or current flow to memorize the current. Probe 4 measures the voltage 边 while scanning (can be obtained --------- 111¾ ^ ------ --Order ---- II --- (Please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) voltage 値), and The voltage 値 is stored in the voltage memory pins 41b, 41c '41d, which will simultaneously scan each of the electricity 3a, 67a' 71a, but a voltage below the 0V threshold 施加 must be applied in advance. Second, in the probe 4 0a — Draw voltage acquisition area 59b, 63b, 67b, probes 41a '41c, 41d will apply a voltage below the critical threshold 动 in advance, and then feedback the probe 4 1 b to form a 0 N state to obtain the desired electricity. The needles 4 1 c and 4 1 d are also repeated-M- 7 4 3279 A7 __B7____ V. Description of the invention (12) Perform this operation to measure and memorize each probe 4 0 a-4 0 d The voltage used in the drawing. That is, it is 5 9 b, 6 3 b, respectively (please read the precautions on the back before filling this page) 6 7b '71b find the probe 40 a — Voltage 値 used at 40 d. If the probes 40a-40d enter the drawing field 60, 64, 6 8, 7 2 ', respectively, the current feedback will be scanned to form a 0FF state. When the probes 40a to 40d are located in the corresponding pattern data, At each drawing position 62, 66, 70, 74 of ON bit 20, each voltage 値 stored in voltage applying section 15 is applied at a predetermined time, and it is located at 0 corresponding to 0 FF bit 21 No voltage or voltage below the critical threshold of current flow is applied. A pattern is drawn by performing the above operations in each of the scanning lines 6 1, 6 5, 69, 73. Consumption cooperation between employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Du printed each of the probes 40 a — 4 0 d. The pattern data depicted does not necessarily have to be different as shown in Figure 6, but multiple probes can also be borrowed. Draw the same pattern data. In addition, the voltage acquisition area is not necessarily divided into probes. For example, the same voltage acquisition area is scanned only the number of times of the number of probes, and the voltage used for each probe drawing is obtained each time. Although Fig. 5 shows that four probes 40a-40d are arranged in a single unit, the number of probes is not limited to this, that is, the higher the number, the faster the drawing speed. It is also possible to arrange in two dimensions. In this case, the position detection for the vertical position control of the probe is performed by using spring portions connected to three probes which are not on the same straight line. For each signal, three Z drive units are made based on three independent position feedbacks. The displacement can be controlled by the vertical position of the probe. Here, as in the first embodiment, if the drawing is performed using the flattening layer 30 shown in Fig. 3, the drawing can be performed even if the substrate 6 has irregularities. And -__ + §- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 472279
五、發明說明（13) (請先閱讀背面之注意事項再填寫本頁) ’亦可將電壓檢測部1 3與電壓施加部1 4 一起連接於探 針4 〇 a — 4 0 b，且使導電層7接地，而獨立測定流動 於各探針4 0 a — 4 0 d中的電流，藉此而能夠獨立對各 探針4 0 a — 4 0 d施以電流反餽。如此一來，由於可同 時測定各探針4 0 a - 4 0 d描繪時所必要的電壓値，因 此而能夠提高描繪速度。 第8 ( a )圖是表示利用二次元配列1 〇 〇個探針來 進行描繪後的圖案模式圖。各探針會在各掃描領域7 5內 進行掃描，掃描領域7 5是與探針同配列數量而存在。又 ’掃描領域7 5的內部是分成電壓取得領域7 6及描繪領 域7 7。就此例而言，爲了針對每條掃描線進行電壓測定 ’掃描領域7 5的左側領域會完全形成電壓取得領域7 6 。因此，電壓測定時所被描繪的圖案會殘留於掃描領域 75的左側全體中。另一方面，第8 (b)圖是表示並非 在各掃描線的最初進行電壓測定，而是在掃描領域7 5的 左上設置電壓取得領域7 6，而使探針移動於該領域來進 行電壓測定時之例。此情況，由於在掃描領域7 5的左側 存在描繪領域7 7，因此可使左右鄰接的圖案彼此接觸。 經濟部智慧財產局員工消費合作社印製 就此實施例而言，是使用單結晶矽探針（蒸鍍鈦而使 具有導電性）與彈簧部間取0 . 1 m m的間隔，而使配列 成縱橫1 0個亦即1 0 0個的探針，在塗怖厚度5 0 n m 的光阻劑R D 2 1 Ο Ο N的導電性矽基板上，將流動於各 探針的電流設定成30pA ’而以0 . lmm/s的速度 來使各探針移動於〇 . 1 mm見方的範圍內進行描繪，而 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 472279 A7 B7 五、發明說明（） 使圖案描繪於1 m m見方的領域中。 (實施例3 ) (請先閱讀背面之注意事項再填寫本頁) 其次’利用第9圖來說明使基板旋轉而來進行描繪之 圖案描繪裝置的實施例。雖本實施例與第5圖之實施例的 圖案描繪裝置本質上不變，但本實施例是使被描繪部5旋 轉者’因應於此，是使一次元配列的探針4 0 a — 4 0 d 靠近被描繪部5的一側而配置者。在此，兩實施例共通的 部份賦予相同圖號。本實施例與第5圖之實施例的主要相 異點是被描繪部5固定於旋轉台8 0上，且旋轉台8 0會 按照來自控制部1 2的控制信號，藉旋轉驅動部8 2經旋 轉軸8 1而旋轉。又，供以使探針4 0 a — 4 0 d對光阻 劑層8相對移動之Z驅動部4 2 a ，4 2 b，X Y驅動部 1 ◦及Z粗動部1 1是安裝於描繪頭部1側。又，電壓施 加部1 4中連接有電流檢測部1 3，可獨立進行接地的導 電層7與各探針4 0 a - 4 0 d之間施加電壓的控制及電 流的檢測。 經濟部智慧財產局員工消費合作社印製 在進行描繪時，首先是利用粗動部1 1來使探針 4 0 a — 4 0 d接近於光阻劑層8表面。在非常接近後， 利用位置檢測部1 6來檢測出來自彈簧部4 1 a及4 2 d 的信號，且利用兩個獨立的位置反餽迴路（由位置檢測部 16，控制部12，Z驅動部42 a及42b所構成）來 自動控制探針4 0 a及4 0 d的垂直方向位置。藉此，可 使所有的探針4 0 a — 4 0 d能以大致相同的力量接觸於 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） >279 4 經濟部智慧財產局員工消費合作社印製 A7V. Description of the invention (13) (Please read the precautions on the back before filling out this page) 'You can also connect the voltage detection section 13 and the voltage application section 1 4 to the probe 4 〇a — 4 0 b, and make The conductive layer 7 is grounded, and the current flowing in each of the probes 40 a-4 0 d is independently measured, whereby the current feedback can be independently applied to each of the probes 40 a-4 0 d. In this way, since the voltage 必要 necessary for each of the probes 40 a-4 0 d for drawing can be measured at the same time, the drawing speed can be increased. Fig. 8 (a) is a diagram showing a pattern pattern after drawing with 1000 probes in a two-dimensional array. Each probe is scanned in each scanning area 75, and the scanning area 75 is arranged in the same number as the probes. The inside of the scanning area 75 is divided into a voltage obtaining area 76 and a drawing area 77. In this example, in order to perform voltage measurement for each scanning line, the left area of the scanning area 7 5 will completely form the voltage obtaining area 7 6. Therefore, the pattern drawn during the voltage measurement remains in the entire left side of the scanning area 75. On the other hand, Fig. 8 (b) shows that instead of performing voltage measurement at the beginning of each scanning line, a voltage acquisition area 76 is provided in the upper left of the scanning area 75, and the probe is moved in this area to perform voltage measurement. Examples at the time of measurement. In this case, since the drawing area 7 7 exists on the left side of the scanning area 75, the left and right adjacent patterns can be brought into contact with each other. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. For this example, a single crystal silicon probe (evaporated with titanium for conductivity) and a spring section of 0.1 mm are used to arrange the columns in a vertical and horizontal direction. 10, that is, 100 probes, on a conductive silicon substrate coated with a photoresist RD 2 1 Ο Ο N with a thickness of 50 nm, and the current flowing through each probe was set to 30 pA '. At a speed of 0.1 mm / s, the probes are drawn within a range of 0.1 mm square, and this paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) 472279 A7 B7 5 Description of the invention () Make the pattern be drawn in the field of 1 mm square. (Embodiment 3) (Please read the precautions on the back before filling in this page.) Next, an embodiment of a pattern drawing device that rotates a substrate for drawing will be described with reference to Fig. 9. Although the pattern drawing device of this embodiment and the embodiment of FIG. 5 are essentially unchanged, this embodiment is a probe 4 0 a-4 that rotates the subject to be drawn 5 in response to this and arranges the elements in one order. 0 d is placed near one side of the portion 5 to be drawn. Here, the parts common to the two embodiments are given the same drawing numbers. The main difference between this embodiment and the embodiment of FIG. 5 is that the drawing part 5 is fixed on the rotary table 80, and the rotary table 80 will use the rotation driving section 8 2 according to the control signal from the control section 12 Rotates via the rotating shaft 8 1. In addition, the Z driving parts 4 2 a, 4 2 b, the XY driving part 1 ◦ and the Z coarse motion part 11 for moving the probes 40 a to 4 0 d relative to the photoresist layer 8 are mounted on the drawing Head 1 side. In addition, a current detection unit 13 is connected to the voltage application unit 14 to control the application of voltage between the grounded conductive layer 7 and each of the probes 40a to 40d, and to detect the current independently. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. When drawing, first use the coarse movement part 11 to make the probes 40a-4od close to the surface of the photoresist layer 8. After very close, the position detection unit 16 is used to detect the signals from the spring units 4 1 a and 4 2 d, and two independent position feedback loops are used (by the position detection unit 16, the control unit 12, and the Z drive unit 42 a and 42 b) to automatically control the vertical positions of the probes 40 a and 40 d. With this, all probes 40 a — 4 0 d can be brought into contact with this paper with approximately the same force. Applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) > 279 4 Ministry of Economic Affairs wisdom Printed by the Consumer Bureau of Property Bureau A7
五、發明說明（ 光阻劑層8 8 0旋轉。 各探針4 0 反餽來調節 電流値，並 實際描繪時 入部1 7所 進行描繪。 每次執行同 表面。然後，藉由旋轉驅 在此’雖是由電壓施加部 a — 4 0 d而進行描繪， 流動於各探針 將此刻的電壓 停止反餽處理 讀入的圖案資 又，電壓値的 一距離的描繪 行一定的旋轉角度時進行 4 4 動部8 2來使旋轉台 1 4來將電壓施加於 但實際上會藉由電流 〇 d與導電層7間的 壓記憶部1 5中，在 壓値（對應於根據輸 値記憶於電 ’而利用電 料而記憶起的電壓値）的輸出來 測定可在各探針4 0 a — 4 0 d 時進行，或旋轉台8 0在每次執 。此情況 以來自各探針4 0 a 但由於可同時進行所有探針4 (請先閱讀背面之注意事項再填寫本頁) 雖一次描繪的距離是 4 0 d的旋轉中心的距離爲比例， a - 4 0 d的電壓値測定 因此可使電壓測定時的旋轉速度變慢，而來縮小電壓測 定用的領域。 旋轉台8 0會在每一周使XY驅 針4 0 a — 4 0 d分別以一定距離移 ，而使能夠描繪出同心圓 旋轉角度而使探針4 0 a 徑方向時，會形成渦狀的 動部1 0位移，使探 動於旋轉的動徑方向 的圖案。並且，依旋轉台8 0的 4 0 d以一定的速度移動於動 排列4個探針4 0 -4 的數量並無特別加以限制 探針亦可爲二次元配列。 位置檢測是利用連接於同 進行，針對各信號而藉由 圖案。在第 0 d，但探 ，數量越多 9圖中， 針亦可爲 描繪速度 此情況，探針垂直位 一直線上的三個探針 三個獨立的位置反餽 雖是一次元 一個。探針 越快。又， 置控制用的 的彈簧部來 來使三個z 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 472279 A7 B7 五、發明說明（16) 驅動部位移，藉此來進行探針的垂直位置控制。與實施例 2同樣的，即使在具有凹凸的基板6上，還是可以利用平 (請先閱讀背面之注意事項再填寫本頁) 坦化層3 0來進行描繪。由於本實施例的圖案描繪裝置可 使對應於資料資訊及位址資訊的點圖案描繪成圓狀，因此 可製作出光碟的圓盤。 【產業上的利用可能性】 若利用本發明，則並非經常施以電流反餽，而是在圖 案描繪之前，求取記憶起可取得所期望的電流之電壓値， 僅以當時記憶電壓値的Ο N / 0 F F切換來進行描繪，藉 此而能夠高速描繪複雜的圖案。甚至可以藉由複數個探針 的使用來進行更高速的描繪。 【圖面之簡單的說明】 第1圖是表示本發明之圖案描繪裝置的實施例構成槪 念方塊圖。 第2 ( a )圖是表示描繪用的圖案資料例，圖2 (乜 )是表示光阻劑層上的探針動作與描繪情況的平面圖。 經濟部智慧財產局員工消費合作社印製 第3圖是表示爲了在凹凸的基板上進行描繪而導入平 坦化層的基板剖面圖。 第4 ( a )圖是表示在實施例中所利用的圖案資料， 圖4 ( b )是表示利用圖（a )的資料描繪後顯像的光阻 劑層的掃描電子顯微鏡照片。 第5圖是表示利用本發明之複數探針的圖案描繪裝置 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -- 472279 A7 B7 五、發明說明（17) 的實施例構成槪念方塊圖 第第圖第第裝 面 繪 平 描 的 況 it 繪 描 與 作 S3 卜針 資ΜMu 圖上 的層 用劑 繪阻 描光 示示 表表 是是 圖圖V. Description of the invention (The photoresist layer is rotated by 880. Each probe 40 is fed back to adjust the current 値, and the actual drawing is performed by the entry section 17. Each time the same surface is performed. Then, it is driven here by rotation. 'Although the drawing is performed by the voltage application unit a-4 0 d, the pattern data read by the voltage stop feedback processing flowing through each probe at this moment is drawn, and the drawing of a distance of voltage 値 is performed at a certain rotation angle 4 4 moving part 8 2 to make the rotary table 14 to apply a voltage to the voltage storage part 15 between the current 0d and the conductive layer 7 in the pressure storage (corresponding to the storage of electricity in accordance with the input voltage). 'And the voltage memorized by the electric material 値) output can be measured at each probe 40 a-4 0 d, or each time the rotary table 80 is held. In this case, from each probe 40 a But all probes 4 can be performed at the same time (please read the precautions on the back before filling this page). Although the distance drawn at a time is proportional to the distance of the rotation center of 40 d, the voltage 値 measurement of a-4 0 d is therefore Reduces rotation speed during voltage measurement Area for voltage measurement. Rotary stage 80 will move the XY pin 4 a-4 0 d by a certain distance each cycle, so that the concentric circle rotation angle can be drawn to make the probe 40 a radial direction. , A vortex-shaped moving part 10 will be formed, which will make the probe move in the direction of the moving diameter direction. In addition, 4 probes 4 0 d will be moved at a certain speed according to the rotating stage 8 0 4- The number of 4 is not particularly limited. The probes can also be arranged for the second element. The position detection is performed by using the same connection, and the pattern is used for each signal. In the 0th d, but the more the number, the more It can also be used to describe the speed. Although the three independent position feedbacks of the three probes on the straight line of the probe are one at a time. The faster the probe is, the more spring part is used to control the three z. This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) 472279 A7 B7 V. Description of the invention (16) The driving part is displaced to control the vertical position of the probe. It is the same as in Example 2. , Even on the substrate 6 with unevenness, You can use flat (please read the precautions on the back before filling in this page) to draw the layer 30. Since the pattern drawing device of this embodiment can draw the dot pattern corresponding to the data information and address information into a circular shape [Industrial Applicability] If the present invention is used, the current feedback is not always applied, but before the pattern is drawn, a voltage can be obtained by memorizing to obtain the desired current. In other words, the drawing is performed only with the 0 N / 0 FF switching of the memory voltage 当时 at that time, thereby enabling complex patterns to be drawn at high speed. Even higher speed rendering can be achieved by using multiple probes. [Brief description of the drawing] Fig. 1 is a block diagram showing the structure of an embodiment of the pattern drawing device of the present invention. Fig. 2 (a) is an example of pattern data for drawing, and Fig. 2 (i) is a plan view showing a probe operation and drawing on the photoresist layer. Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 3 is a cross-sectional view of a substrate with a flattening layer introduced for drawing on uneven substrates. Fig. 4 (a) shows the pattern data used in the examples, and Fig. 4 (b) is a scanning electron microscope photograph showing the photoresist layer developed after drawing with the data of Fig. (A). Fig. 5 shows a pattern drawing device using a plurality of probes according to the present invention. The paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm)-472279 A7 B7. 5. Example of the invention description (17) The composition of the block diagram of the block diagram is shown in the first figure and the first surface of the surface. It is drawn and made as a layer on the SMU map.
圖 式 模 例 案 圖 的 後 繪 描 針 探 數 複 用 案 圖 之 繪 描. 行 進 而 轉 旋 板 基 的 明部 說頭 之繪 號描 圖 · · --------I------ 裝--- (請先閱讀背面之注意事項再填寫本頁) 4 經濟部智慧財產局員工消費合作社印製Schematic diagram of the drawing of the model example. The drawing of the probe multiplexing drawing. Going forward and turning the drawing of the bright part of the base of the board. · -------- I --- --- Install --- (Please read the notes on the back before filling out this page) 4 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
IXIX
TX 1 2 部 部部部 44 4 動部 測加憶 ,, 部 層及驅動部檢施記 a a 繪 層劑 aY粗制流壓壓 οι 具描板電阻 2XZ 控電電電 4 4 夾被基導光 4 ............ b b o 1 b cTX 1 2 部 部 部 部 44 4 Actuator measurement and recall, the layers and drive section check and record aa paint layer agent aY rough flow pressure pressure ο tracing resistance 2XZ control electric electricity 4 4 clamped base light guide 4 ............ bbo 1 bc
c 1X 部 針簧 探彈 d d ο -—_ 4 4 及及 · •線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 472279 A7 B7 五、發明說明（） 1 6 :位置檢測部 1 7 :輸入部 2 0 : ◦ N單位 (請先閱讀背面之注意事項再填寫本頁) 2 1 : 0 F F單位 22，32，59a，59b，59c，59d，63a ，63b，63c，63d，67a，67b，67c， 67d，71a ，71b，71c ，71d 及 76:電壓 取得領域 23，33，60，64，68，72 及 77 :描繪領域 2 4，6 1，6 5，6 9 及 7 3 :掃描線 25，62，66，70及74 :描繪位置 3 0 :平坦化層 3 1 :光阻劑圖案 51 ，52，53及54 :圖案資料 55，56，57，58及75 :掃描領域 8 0 :旋轉台 8 1 :旋轉軸 8 2 :旋轉驅動部。 經濟部智慧財產局員工消費合作杜印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 21c 1X part spring probe dd ο -—_ 4 4 and · • • The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 472279 A7 B7 V. Description of the invention () 1 6 : Position detection unit 17: Input unit 2 0: ◦ N unit (please read the precautions on the back before filling this page) 2 1: 0 FF unit 22, 32, 59a, 59b, 59c, 59d, 63a, 63b, 63c, 63d, 67a, 67b, 67c, 67d, 71a, 71b, 71c, 71d, and 76: voltage acquisition areas 23, 33, 60, 64, 68, 72, and 77: drawing areas 2 4, 6 1, 6, 5, 6 9 and 7 3: Scan lines 25, 62, 66, 70, and 74: Drawing position 3 0: Flattening layer 3 1: Photoresist pattern 51, 52, 53, and 54: Pattern data 55, 56, 57, 58 And 75: scanning area 8 0: rotary table 8 1: rotary axis 8 2: rotary driving section. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs for consumer co-operation. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm). 21