JP3643480B2 - Drawing device - Google Patents

Description

【００２２】
ここで、Ｇｉは、フィードバックゲイン、Ｉｓは設定電流である。
【００２３】
（２）電力Ｐ＝ＩＶを制御する場合は、(数２)で表される電圧値を出力する。
【００２４】
【数２】

【００２５】
ここで、Ｇｐはフィードバックゲイン、Ｐｓは設定電力である。
【００２６】
（３）探針２１ａ−２１ｄ及びばね部２２ａ−２２ｄと基板９との間に存在する静電容量Ｃを考慮するときは、電圧Ｖが変化すると、(数３)で表される充放電電流が流れる。
【００２７】
【数３】

【００２８】
から、これを考慮すると、(数１)で表される電流制御時の出力電圧は、
【００２９】
【数４】

【００３０】
となる。
【００３１】
また、(数２)で表される電力制御時の出力電圧は、
【００３２】
【数５】

【００３３】
となる。
【００３４】
（４）さらに、電流検出部６及び駆動及び照射制御部１３が構成する帰還制御系は時定数τを持っており、高周波成分は除去される。充放電電流Ｉｃに対してもこれがフィルタとして働き、Ｉｃの影響を正確に除去するためには、時定数τを考慮して、(数４)は
【００３５】
【数６】

【００３６】
となり、(数５)は、
【００３７】
【数７】

【００３８】
となる。
【００３９】
本実施例では、１００ｎｍの厚さの前記レジストＲＤ２１００Ｎをコートした基板８を０．１ｍｍ／ｓで移動させ、探針２１ｃ、２１ｄと導電層１０との間に印加する電圧が−８５Ｖ付近で電流が１００ｐＡになるように、すなわち照射線量が１０ｎＣ／ｃｍとなるようにした。
【００４０】
レジスト層１１に潜像作成中は、探針２１ｂ，２１ｃは潜像を作成するために印加した電圧によって各探針２１ｂ，２１ｃ−導電層１０間に働くクーロン力を受ける。このクーロン力により、各バネ部２２ｂ，２２ｃが変形し、各探針はレジスト層１１に接触している。潜像は作成しょうとするパターンに応じて形成しない部分もある。潜像を形成しない部分では電流が必要ないから、この位置では探針に電圧を印加する必要はない。しかし、電圧を０Ｖにすると探針に作用していたクーロン力が無くなるから、各バネ部２２ｂ，２２ｃの変形がなくなり、レジスト層１１表面から離れてしまう。そうすると、潜像を形成すべき位置で再び電圧を印加した際、探針にクーロン力が突然作用して各バネ部２２ｂ，２２ｃが急に変形することになり、そのため探針がレジスト層１１に激しくぶつかり探針が破損する可能性が高くなる。そのため、潜像を作製しない部分を描画する際は、潜像が形成されないほどの小さい電流が流れるように電圧を制御するのがよい。本実施例では印加電圧を−７０Ｖ以下にすると電流は１ｐＡ以下になり潜像は形成されなかった。一方、両端部の探針による位置監視の電流は、この程度以下で行うのが当然であるが、各バネ部２２ａ，２２ｄがクーロン力による変形を出来るだけ受けないように、より小さい電流を流すにすぎない電圧とするのが良いわけである。
【００４１】
本発明によって描画された潜像を現像することについて簡単に説明しておくと以下のようである。
【００４２】
０．８３％の水酸化テトラメチルアンモニウム溶液に１分間浸積することにより現像する。その結果、レジスト層１１にネガ型のレジストを使用した場合は潜像を作製したレジストだけ溶解せずに残り、線幅１００ｎｍの凸型の線レジストパターンを作製することができる。レジスト層１１にポジ型のレジストを使用した場合は潜像を作製したレジストだけ溶解して、線幅１００ｎｍの凹型の線レジストパターンを作製することができた。図６は本発明の実施例におけるパターン幅と照射線量の関係を示し、パターン幅が照射線量に依存するため、照射線量を調節することにより１００ｎｍ以上の任意のパターン幅を作製することができることを示す。
【００４３】
本発明では、描画は、第１段階として基板８の探針へのアプローチ、第２段階として探針の傾き補正、そして最後に描画の手順となる。そして、多くの探針の内、端部にある探針を位置決めおよび描画中の位置の監視に使用し、他の探針を描画に使用することにより、描画に使用する探針は単に電流制御のみを行えば良い。しかも、本発明は、潜像を形成するときは探針がクーロン力により変形することにより、厳密な位置制御をしなくても電流制御のみで描画が出来ることに着目した点において有用な手法を提供することが出来た。前記実施例の説明では、探針は４つだけで少ないが、これが多くなればなるほど、本発明のメリットは大きくなる。なお、上述の実施例では、基板８と探針のアプローチは基板８をＺ軸方向に動かすものとしたが、探針を保持しているホルダー２４のピエゾ素子２５、２６をこのアプローチのために使用することも出来る。
【００４４】
実施例 II
図３(ａ)は本発明の描画装置のカンチレバーおよびその保持部の他の実施例を示すカンチレバーの腹面側から見た平面図、図３(ｂ)はその側面図である。図３(ａ)および図３（ｂ）を図２(ａ)および図２（ｂ）と対比して分かるように、３１ａ，３１ｂ-----３１ｋ---３１ｎ、３２ａ---３２ｍ---３ｊｍの多数のばね部を持つ探針部３０とした例である。これらのばね部はそれぞれ、ホルダー３４ａ，３４ｂ，３４ｃおよび３４ｄに保持されており、それぞれのホルダーは共通ホルダー３５によって保持される。各探針の導電線が３３で代表して示されるが、これらは、図示しないコネクタで導出されて、必要な接続が行われるものとされる。共通ホルダー３５の背面には、図３(ｂ)に示すように、図２(ａ)で示すピエゾ素子２５、２６に対応するピエゾ素子３６ａ−３６ｃが設けられる。図では、ピエゾ素子３６ａは見えていない。ピエゾ素子３６ａ、３６ｂは探針３１ａ，３１ｎを使って図のＸ方向の傾き制御に使用され、ピエゾ素子３６ｂ、３６ｃは探針３１ｎ，３ｊｍを使って図のＹ方向の傾き制御に使用される。、
実施例 III
図４(ａ)は本発明に採用できる集積化した探針駆動装置群およびその保持部の実施例を示す斜視図、図４(ｂ)はその単位の探針駆動装置の構造を示す断面図である。
【００４５】
図４(ａ)は、図４(ｂ)に示す探針駆動装置４２０を多数ＸＹ二次元に配置して粗動機構４１０により保持して探針の位置を制御できるようにした実施例の構成を示す概念図である。図３（ａ）、(ｂ)の各探針および各ばね部に対応する多数の探針駆動装置４２０がＸＹ二次元に配置されている。そして図３（ａ）、(ｂ)の共通ホルダー３５およびピエゾ素子３６ａ−３６ｃに対応する粗動機構４１０により探針駆動装置４２０の群を保持して探針の位置を制御できるようにした構成を示す。
【００４６】
このようにすれば、粗動機構４１０によってアプローチおよび傾き補正のみならず、描画のためのＸＹ二次元駆動も可能となる。勿論、前述の実施例のように、それぞれの機能を分割して負担させて良いのは当然である。
【００４７】
本実施例における粗動機構４１０の構成については詳細な説明を省略するが、図４(ｂ)に示す探針駆動装置４２０の作成と同様に微細加工による工夫、さらにはピエゾ素子との組み合わせを工夫すれば、容易に作成することが出来る。逆に、 図２(ａ)に示したような単なるホルダーとピエゾ素子との組み合わせとしても良い。
【００４８】
以下、探針駆動装置４２０の例を図４(ｂ)によって説明する。図４(ｂ)は探針駆動装置４２０の構造の一例を開示するブロック図である。この実施例では、第一の集積化静電アクチュエータ２１００と、第二の集積化静電アクチュエータ２５００がカスケードに接続されたものとされている。すなわち、第一のアクチュエータ２１００の可動電極２１０に第二のアクチュエータ２５００の固定電極２７０が接続され、第二のアクチュエータ２５００の可動電極２５０の延伸部先端に探針２２０が備えられる。また、本実施例の第一の集積化静電アクチュエータは、 一つのアクチュエータで、Ｘ方向、Ｙ方向の駆動ができるものとされる。したがって、第一のアクチュエータ２１００によりＸ方向、およびＹ方向、第二のアクチュエータ２５００によりＺ方向のそれぞれの動きを制御するものである。
【００４９】
基部２３０の先端部にアクチュエータ２１００の固定電極２１１が形成され、やはり基部２３０の先端部には板バネ２４１とこれを連結する連結部２４２よりなるバネ２４０が形成される。バネ２４０の連結部２４２にはアクチュエータ２１００の可動電極２１０が結合される。アクチュエータ２１００の固定電極２１１の他端部は基部端部２３２に連結され、ここに板バネ２４１’とこれを連結する連結部２４２’よりなるバネ２４０’が形成される。バネ２４０’の連結部にはアクチュエータ２１００の可動電極２１０が結合されるとともにＺ駆動軸部２７０が連結される。アクチュエータ２１００の固定電極２１１と可動電極２１０との間に作用する駆動力は、それぞれ、ばね２４０、２４０’をたわませるので、Ｚ駆動軸部２７０はアクチュエータ２１００による駆動力に応じたＸ方向（紙面と平行で左右方向）、Ｙ方向（紙面と垂直）の位置を取る。
【００５０】
Ｚ駆動軸部２７０を、上述の基部２３０とする形でＺ駆動軸部２７０の先端部に集積化静電アクチュエータ２５００を形成する。すなわち、Ｚ駆動軸部２７０と一体構成の枠部２７０’に支持された固定電極２５１が形成され、同じく枠部２７０’を固定部分とする板バネ２６１とこれを連結する連結部２６２よりなるバネ２６０および板バネ２６１’とこれを連結する連結部２６２’よりなるバネ２６０’が形成される。バネ２６０の連結部２６３およびバネ２６０’の連結部２６３’には先端に探針２２０が取り付けられる探針支持部２８０が結合されるとともに、探針支持部２８０にアクチュエータ２５００の可動電極２５０が結合される。アクチュエータ２５００の固定電極２５１と可動電極２５０との間に作用する駆動力は、それぞれ、ばね２６０、２６０’をたわませるので、探針支持部２８０はＺ方向（紙面と平行で上下方向）の位置を取る。本実施例では、Ｚ駆動軸部２７０がアクチュエータ２１００によりＸ方向、Ｙ方向の制御をなされ、この状態で、探針がＺ方向の制御をなされる。
【００５１】
図の実施例では、図の表示を簡略化するため、各電極への配線および探針に印加するべき電圧の配線、さらには、絶縁の要否についての説明を省略したが、これらについては、必要に応じて任意の構成で実現出来ることであるので、これ以上の説明は省略する。
【００５２】
この図４(ｂ)の実施例では、この構造を、１枚の基板を基礎として半導体微細加工技術により一次元に並列して配置して集積化することが出来、しかも基部２３０および基部端部２３２は、基礎となる１枚の基板上に直接付いていて良く、その他の部分が半導体微細加工技術により処理され基板から離された形で集積化静電アクチュエータを持つ集積化探針駆動装置を構成できることになる。したがって、１チップ上に、一次元に並列して配置した集積化探針駆動装置とすることが極めて容易である。
【００５３】
本実施例の１チップ上に一次元に並列して配置した集積化探針駆動装置の構造を、複数枚積層して、二次元に配置した集積化探針駆動装置を構成することも容易である。
【００５４】
本発明では、多数の探針駆動装置４２０は、全体としてのアプローチ、傾き補正および描画中の位置制御が行われれば足りるから、多数の探針駆動装置の個々の探針２２０の位置を制御することは、本質的に必要ではない。しかし、これが出来ることは、部分的な描画の修正等を考えれば、有用である。
【００５５】
実施例 IV
次に、基板を回転させて描画するための描画装置とした実施例を図５を参照して説明する。本実施例は、図１に示した実施例の描画装置と本質的に変わるところはないが、基板８を回転させるものとし、これに応じて、微細描画ヘッド部１を基板８の片側に寄せて配置したものである。両実施例で共通するものは同じ参照符合で示した。図１に示した実施例の移動部１２は回転駆動部６１に、移動ステージ１５は回転ステージ６５に、 Ｘ、Ｙ、Ｚ方向に移動させる駆動機構１６、１７および１８は回転軸６６に、それぞれ置換される。駆動及び照射制御部１３が、パターン入力部６０から与えられる制御信号に応じて、回転駆動部６１に回転信号を与える。この回転は回転軸６６を介して回転ステージ６５を回転させ、この回転に関する情報は駆動及び照射制御部１３にフィードバックし精密に制御する。
【００５６】
本実施例でも、描画に先行して、近接操作が行われるが、この操作は駆動及び照射制御部１３が回転駆動部６１に与える信号に応じて、回転軸６６を上方に移動（Ｚ軸駆動）させる。探針２１ａ−２１ｄが描画される基板８のレジスト層１１の面に対して所定の位置になるまで、回転ステージ６５を移動させると近接は完了である。その後、傾き補正を行い、続いて、回転ステージ６５を回転させるとともに基板８のレジスト層１１にパターンを描く。パターンを描いている間、両端部の探針２１ａ、２１ｄを使用して、 電流の大きさを監視してレジスト層１１と探針間の距離が適切な値を維持するように、回転駆動部61はＺ軸方向の位置制御を継続するように駆動及び照射制御部１３によって制御される。さらに、この実施例では、図１に示した実施例に比し、描画中も回転による傾きを補正部５によって補正する操作が頻繁に必要になると思われるが、両端部の探針による位置監視により支障無く実行できる。
【００５７】
本実施例では、基板８に比し、微細描画ヘッド部１は相対的に小さいから、 基板回転ステージ６５で基板８を３６０度回転した後に現像すると、例えば、光ディスクの案内溝に使用できる真円状のレジストパターンが作製できる。また、一定照射線量を照射し続けながら微細描画ヘッド部１をある点を中心として回転中心方向に左右に移動させながら基板回転テージ６５で基板８を３６０度回転した後に現像すると波形のレジストパターンが円状に作製できる。あるいは、照射線量を、潜像が形成できる照射線量と潜像が形成できない照射線量を切り替えながら微細描画ヘッド部１を固定して基板回転ステージ６５で基板８を３６０度回転した後に現像した場合は光ディスクのデータ情報、アドレス情報に使用できるドットパターンが円状に作製できる。この動作をつづけ基板８全域にパターンを描画すると、探針を０．１ｍｍピッチで並べ、トラックピッチを１００ｎｍとし、回転速度を毎時５０回転で２０時間で全領域にパターンを描画できる。
【００５８】
以上示した方法を組み合わせることにより光ディスクの原版を作製できる。さらに、ディスク全面に凹型ドットレジストパターンを作製し、導電層１０を電極として電界メッキによりドットパターンの中に例えば鉄、コバルト、ニッケル、鉄ーコバルト合金、コバルトーニッケル合金、鉄ーニッケル合金などの磁性体を埋め込めば、磁性ドットを孤立化させた記録ビットとした超高密度磁気記録媒体を作製できる。
【００５９】
実施例 V
次に、図７は図２(ａ)に示すカンチレバーおよびその保持部の異なった実施例を示す斜視図である。
【００６０】
本実施例は、両端部のカンチレバー２２ａおよび２２ｄの変位の検出を光てこ式の原子間力顕微鏡によるものとした例である。８３、８１は光源であり、８４、８２は受光装置である。光てこ式の原子間力顕微鏡は、探針２１aおよび２１ｄと基板８との間に電流を流す必要が無いから、探針２１に電圧を加える必要が無い。したがって、ばね部が探針２１ａおよび２１ｄに加える電圧によるクーロン力を受けて変形することがない。このため、両端部の探針による位置監視のために光てこ式の原子間力顕微鏡を使用するときは、安定した位置制御及び傾き制御が実現できることになる。
【００６１】
実施例 VI
図８（ａ）は図３(ａ)に示すカンチレバーおよびその保持部の変形の実施例を示すカンチレバーの腹面側から見た平面図、図８（ｂ）はその側面図、図９はその背面図である。
【００６２】
本実施例では、図３(ａ)と図８（ａ）、図３(ｂ)と図８（ｂ）とを対比してよく分かるように、ホルダー３４ａ−３４ｄをカンチレバーの各列毎に３４ａ’，３４ａ’−３４ｄ’，３４ｄ’の二つに分割するとともにカンチレバーをホルダーに対して傾きを持てせ、この向きを同じものとした。さらに、図７の実施例と同様に、端部のカンチレバー３１ａ、３１ｎおよび３ｊｍの変位の検出を光てこ式の原子間力顕微鏡によるものとした例である。９１、９３および９５は光源であり、９２、９４および９６は受光装置である。本実施例では、カンチレバーを同じ傾きの向きを持つものとしたから、基板８を移動させるとき、レジスト１１の面が持つ凹凸に対して、 カンチレバーのばね部が効果的に作用して探針の損傷する可能性を低減できる効果がある。また変位の検出を光てこ式の原子間力顕微鏡としたから、先の実施例と同様に、安定した位置制御及び傾き制御が実現できる効果もある。なお、本実施例では、図９を参照して明らかなように、探針３ｊｍの変位を検出するための光てこ式の原子間力顕微鏡の光の透過のためにホルダー３５の一部はカットされて光が通るようにされなければならない。
【００６３】
実施例 VII
図１０（ａ）は図３(ａ)に示すカンチレバーおよびその保持部の変形の他の実施例を示すカンチレバーの腹面側から見た平面図、図１０（ｂ）はその側面図である。
【００６４】
本実施例では、図８（ａ）と図１０（ａ）、図８（ｂ）と図１０（ｂ）とを対比してよく分かるように、探針部３０と基板８の近接および位置監視を端部のカンチレバー３１ａ、３１ｎおよび３ｊｍの変位の光てこ式の原子間力顕微鏡による検出に代えて、ホルダー３５のカンチレバー側の面の３個所に電極４１、４２および４３を設けて、この電極と基板の導電体部分との間の容量検出により行うようにした例である。
【００６５】
本実施例では、基板が移動ステージ１５にセットされた段階では、実質的に容量検出はできないが、近接が進んである程度接近すると容量検出は可能になるから、これを利用して近接を完了できる。また、描画中の位置監視もこれで行うことができる。
【００６６】
実施例VIII
図１１（ａ）は図３(ａ)に示すカンチレバーおよびその保持部の変形の他の実施例を示すカンチレバーの腹面側から見た平面図、図１１（ｂ）はその側面図である。
【００６７】
本実施例では、図８（ａ）と図１１（ａ）、図８（ｂ）と図１０（ｂ）とを対比してよく分かるように、探針部３０と基板８との位置関係を両者の間に介在させるスライダー５１、５２、５３および５４によって直接保持するものである。これらのスライダーが基板８と弱い力で接触した状態を維持するために、ホルダー３５の背面の四つの角に弱いばね装置５５、５６、５７および５８（５７、５８は図示しない）を設ける。
【００６８】
本実施例では、基板８が移動ステージ１５にセットされた後、 近接の段階で、弱い力でホルダー３５を基板８に押し付ける。その後はその状態を維持するようにすれば、描画中の位置制御を特に行う必要はない。
【００６９】
実施例IX
図１２（ａ）は図３(ａ)に示すカンチレバーおよびその保持部の変形の他の実施例を示すカンチレバーの腹面側から見た平面図である。図１２（ｂ）は、ばね部が形成されていない領域の位置ａ−ａ’で矢印方向に見た断面図、図１２（ｃ）は、ばね部が形成されている領域でばね部が在る位置ｂ−ｂ’で矢印方向に見た断面図および図１２（ｄ）は、ばね部が形成されている領域でばね部が無い位置ｃ−ｃ’で矢印方向に見た断面図である。
【００７０】
本実施例では、図３(ａ)および図３（ｂ）で説明した多数のばね部３１ａ，３１ｂ-----３１ｋ---３１ｎ、３２ａ---３２ｍ---３ｊｍを共通ホルダー３５に直接作り付けた探針部３０とした例である。すなわち、これらのばね部は共通ホルダー３５を削って薄くした領域に形成するとともに、各ばね部が独立するように切り欠きで区分されたものとされる。図１２において３１ｂ、３１ｉおよび３１ｓはそれぞれ探針を、３３は各探針の引き出し線を代表して示す。５１〜５４は図１１に示す実施例VIIIのスライダーに、５５〜５８（５７、５８は図示しない）は弱いばね装置にそれぞれ対応する。本実施例でも、実施例VIIIと同様、これらのスライダーと弱いばね装置によって探針と基板８とが弱い力で接触した状態を維持する。
【００７１】
図１２（ｃ）と図１２（ｄ）と対照して明らかなように、ばね部が形成されている領域では共通ホルダー３５は削られて薄板状態となっており、この領域においてばね部が無い位置では共通ホルダー３５は切り欠かれている。したがって、十分なばね定数を有するばね部を形成することができ、探針に電流を流すと必要な変形は十分得られる。
【００７２】
また、本実施例でも、基板８が移動ステージ１５にセットされた後、 近接の段階で、弱い力でホルダー３５を基板８に押し付ける。その後はその状態を維持するようにすれば、描画中の位置制御を特に行う必要がないことは実施例VIIIと同様である。
【００７３】
カンチレバーのパラメータの例
図１３（ａ）はカンチレバーのクーロン力による変位を説明するためのカンチレバーのパラメータの例を示す平面図、図１３（ｂ）はその側面図である。この例に示すカンチレバーは、その幅がＷ，長さがＬ，厚さがtであり、探針の長さＬ’が１０ないし１５μｍ程度のものである。この例で図１の導電層１０とカンチレバー２２との間に構成される平行平板コンデンサーによってクーロン力をラフに計算した。
【００７４】
まず、平行平板コンデンサーの電極板間に作用する力Ｆは次(数８)で示される。ただし、ε₀は電極板間に存在する誘電体の誘電率、Ｓは電極板の面積、Ｖは電極板間の電圧、ｄは電極板間の距離である。
【００７５】
【数８】

【００７６】
いま、カンチレバーをばね定数の異なるＡ−Ｃの三サンプルを用意したが、そのパラメータは次のようである。
【００７７】
【表１】

【００７８】
ここで、探針を保持しているカンチレバーの面積をＳとしてカンチレバーに作用するクーロン力について計算した結果を下表に示す。
【００７９】
【表２】

【００８０】
いま、上記クーロン力が６３０ｎＮの例に着目して、上記サンプルの変形量を計算した結果は下表の通りである。
【００８１】
【表３】

【００８２】
この例でも分かるように、電圧が４０Ｖの場合ですら、このように大きな力と変形が生ずるから、上述した描画に際して−８０Ｖを加える場合には、カンチレバーには大きな変形が生じ、描画のためのカンチレバーの位置制御は意味が無く、逆に、この変形が、レジスト層１１の厚さの不均一性に対して、カンチレバーが安定に追従することになる。本発明の重要な着目点はここにあるのである。
【００８３】
つぎに、図１４（ａ）はカンチレバーのクーロン力による変位を説明するためのカンチレバーの他のパラメータの例を示す平面図、図１４（ｂ）はその側面図である。この例に示すカンチレバーは二点支持の梁であり、いま、先端部の幅Ｗを４μｍ、厚さtを０．４μｍ、長さＬが２００μｍおよび１００μｍ、ばね定数が０．０２および０．０９、探針の長さＬ’が６μｍ程度の二例について計算した。この二例は先端部の構造および形状は同じであり、長さＬのみを異にする。この例でＬ＝１００μｍ、探針のカンチレバーの面での面積を３１００μｍ²、電極板間の距離ｄを６μｍとし、加えた電圧を４０Vとしたとき、クーロン力は６１０ｎＮであった。このカンチレバーはこの程度の力があれば、図１３のカンチレバーと同様６８００ｎｍ程度の変形を生ずる。したがって、このタイプのカンチレバーでも変形が十分に利用できるものとなる。
【００８４】
図４(ａ)、図４(ｂ)に示した探針駆動装置はこれらの例のように、カンチレバーが無く、平行平板コンデンサーを構成するものではないが、ばね２６１，２６１’が極めて柔らかいから、探針に作用するクーロン力が十分利用できる。
【００８５】
【発明の効果】
以上説明したように、本発明によれば、基板に対する探針の位置制御は探針のグループの端部でのみ行い、他の探針は電流の制御のみが行われれば良いから、高速に描画できる描画装置を容易に作成することができる。
【００８６】
また、近接および傾きの制御は、厳密なものである必要はないから、最も簡単な構造としては、図１０、図１１あるいは図１２に示す程度の構造で良い。また、図示は省略するが、カンチレバーの背面に電極を配置して両者の間の容量変化によりカンチレバーの変位を検出するタイプのものとすることも出来る。
【図面の簡単な説明】
【図１】本発明の描画装置の実施例構成概念を示すブロック図。
【図２】 (ａ)は図１の描画装置のカンチレバーおよびその保持部を示す斜視図、（ｂ）はカンチレバーの腹面側から見た平面図。
【図３】 (ａ)は本発明の描画装置のカンチレバーおよびその保持部の他の実施例を示すカンチレバーの腹面側から見た平面図、(ｂ)はその側面図。
【図４】 (ａ)は本発明に採用できる集積化した探針駆動装置群およびその保持部の実施例を示す斜視図、(ｂ)はその単位の探針駆動装置の構造を示す断面図。
【図５】本発明の描画装置の他の実施例構成概念を示すブロック図。
【図６】本発明の描画装置において探針から照射した電流の照射線量と基板の線幅との関係の一例を示す図。
【図７】図２(ａ)に示すカンチレバーおよびその保持部の異なった実施例を示す斜視図。
【図８】（ａ）は図３(ａ)に示すカンチレバーおよびその保持部の変形の実施例を示すカンチレバーの腹面側から見た平面図、（ｂ）はその側面図。
【図９】図８に示すカンチレバーおよびその保持部の実施例の背面図。
【図１０】（ａ）は図３(ａ)に示すカンチレバーおよびその保持部の他の変形の実施例を示すカンチレバーの腹面側から見た平面図、（ｂ）はその側面図。
【図１１】（ａ）は図３(ａ)に示すカンチレバーおよびその保持部の他の変形の実施例を示すカンチレバーの腹面側から見た平面図、（ｂ）はその側面図。
【図１２】（ａ）は図３(ａ)に示すカンチレバーおよびその保持部の他の変形の実施例を示すカンチレバーの腹面側から見た平面図、（ｂ）は、ばね部が形成されていない領域の位置ａ−ａ’で矢印方向に見た断面図、（ｃ）は、ばね部が形成されている領域でばね部が在る位置ｂ−ｂ’で矢印方向に見た断面図および（ｄ）は、ばね部が形成されている領域でばね部が無い位置ｃ−ｃ’で矢印方向に見た断面図。
【図１３】（ａ）はカンチレバーのクーロン力による変位を説明するためのカンチレバーのパラメータの例を示す平面図、（ｂ）はその側面図。
【図１４】（ａ）はカンチレバーのクーロン力による変位を説明するためのカンチレバーの他のパラメータの例を示す平面図、（ｂ）はその側面図。
【符号の説明】
１…微細描画ヘッド部、４…微細描画部、５…傾き補正部、６…電流検出部、７…電圧印加部、８…基板、９…ガラス製の基板、１０…導電層１０、１１…レジスト層、１２…移動部、１３…駆動及び照射制御部、１５…移動ステージ１５、１６…Ｘ軸駆動機構、１７…Ｙ軸駆動機構、１８…Ｚ軸駆動機構、２１ａ、２１ｂ、２１ｃ、２１ｄ…導電性の探針、２２ａ、２２ｂ、２２ｃ、２２ｄ…導電性のバネ部、２３ａ−２３ｄ…導電性の膜、２４…ホルダー、２５，２６…ピエゾ素子、３０…微細描画部、３１ａ，３１ｂ-----３１ｋ---３１ｎ、３２ａ---３２ｍ---３ｊｍ…ばね部、３３…探針の導電線、３４ａ，３４ｂ，３４ｃおよび３４ｄ…ホルダー、３５…共通ホルダー、３６ａ−３６ｃ…ピエゾ素子、４１，４２および４３…電極、５１，５２，５３および５４…スライダー、５５，５６，５７および５８…弱いばね装置、６０…パターン入力部、６１…回転駆動部、６５…回転ステージ、６６…回転軸、８３，８１…光源、８２，８４…受光装置、９１，９３および９５…光源、９２，９４および９６…受光装置、２２０…探針、４１０…粗動機構、４２０…探針駆動装置、２１００…第一の集積化静電アクチュエータ、２５００…第二の集積化静電アクチュエータ。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a drawing apparatus used in a microfabrication technique using a scanning probe microscope.
[0002]
[Prior art]
With the high integration of semiconductor electronic devices and the high density of recording media, ultrafine processing technology is required. However, in electronic devices, the minimum processing dimension is limited to about 100 nm depending on the wavelength of light used in photolithography and the lens material, and in recording media, a reduction in resolution margin is expected in a laser original recording apparatus. In recent years, for example, SC Minne et al., Fabrication of 0.1 m metal oxide semiconductor field-effect transistor Appl. Phys. Lett. 66 (6) 6 February 1995 pp. 703-705, or Hyongsok T. Microfabrication technology using a scanning probe microscope, as shown in Soh et al., Fabrication of 100 nm pMOSFETs with Hybrid AFM / STM Lithography (1997 SYMPOSIUM ON VLSI TECHNOLOGY), has attracted attention. This is generally a method in which a voltage is applied between the probe and the substrate for processing, and the resolution is high, and in principle, processing at the atomic level is possible.
[0003]
In addition, as disclosed in US Pat. No. 5,666,190, a lithography system including a plurality of cantilevers has been proposed.
[0004]
[Problems to be solved by the invention]
When a scanning probe microscope is used for a drawing apparatus, it is useful to increase the scanning speed by using a plurality of probes simultaneously, such as the above-mentioned USP 5,666,190 or an integrated micro apparatus proposed in the parent application of this application. It is. However, on the other hand, in this method, it is necessary to control the irradiation dose and the distance between the substrate and the probe for each probe, and not only those driving devices are required, but also all of them. A control system that comprehensively controls the system was also necessary, making it a complicated device.
[0005]
[Means for Solving the Problems]
In the present invention, the Coulomb force acting on each probe or the cantilever holding the probe is attracted to the substrate surface side by the voltage applied to irradiate the substrate with current from the probe during drawing. It is noted that the cantilever is deformed and has a size sufficient to bring each probe into contact with the substrate surface. That is, at the initial stage of drawing, rough position control is performed for the probe group to determine the distance between the substrate and the probe that can irradiate the substrate with current. In this case, the end portion of the probe group may have an appropriate distance between the substrate and the probe. In this way, all the probes can have an appropriate substrate-to-probe distance within a certain range of variation associated with the production of the probe group. Once the drawing is started, the distance between the substrate and the probe at the end of the probe group is monitored and controlled so that the initial positioning state is maintained.
[0006]
In other words, in the present invention, drawing is performed while maintaining the end of the group of probes to have an appropriate distance between the substrate and the probe at the start of drawing. Then, each probe receives a Coulomb force due to the current applied to the substrate, and is naturally displaced following the minute deformation of the substrate surface. Therefore, during the drawing, the distance control between the substrate and the probe for each probe is not performed. Of course, it is natural that the current applied to the substrate from the probe is controlled independently for each probe.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
Example I
In this embodiment, an embodiment of a drawing apparatus in which drawing is performed by moving a substrate in the plane direction of a flat substrate will be described with reference to FIGS.
[0008]
FIG. 1 is a block diagram showing the configuration concept of the first embodiment of the drawing apparatus of the present invention. The fine drawing head unit 1 includes a fine drawing unit 4 and an inclination correction unit 5. The fine drawing unit 4 includes conductive spring portions 22a, 22b, 22c, and 22d as cantilevers, conductive probes 21a, 21b, 21c, and 21d connected thereto, and a holder 24 that collectively holds them. Is done. The holder 24 is coupled to the tilt correction unit 5 via the piezoelectric elements 25 and 26. In the correction unit 5, the opposite side of the surface to which the piezo elements 25 and 26 are coupled is held in a drawing apparatus main body (not shown). Further, the correction unit 5 applies a voltage to each of the piezo elements 25 and 26 in accordance with an inclination correction signal given from the drive and irradiation control unit 13 described later, and connects the probes 21a and 21d at both ends. The inclination of the holder 24 is corrected so as to be parallel to the surface of the resist layer 11 of the substrate 8 on which is drawn. The voltage application unit 7 controls the voltage applied to the probes 21 a to 21 d according to a control signal given from the drive and irradiation control unit 13. In this case, when the inclination is corrected using the probes 21a and 21d at both ends and when the drawing is performed using the probes 21b and 21c, the voltage is controlled to be appropriate for each. The current detector 6 detects the current applied to the resist layer 11 from the probe and feeds back the detection output to the drive and irradiation controller 13. In the case of tilt correction, the drive and irradiation control unit 13 applies appropriate voltages to the probes 21a and 21d at both ends so that the respective currents are equal to each of the piezoelectric elements 25 and 26. To control the voltage applied. In the case of drawing, the voltage applied to the voltage application unit 7 to the probes 21b and 21c is controlled so that the current corresponds to the control signal corresponding to the drawing pattern given from the pattern input unit 60. Here, regarding the current flowing through the resist layer 11, when the insulating property of the resist layer 11 is high, it is a field emission current, and when it is conductive, it is a so-called current. In the present invention, this is referred to as current without distinguishing between the two.
[0009]
The drive and irradiation control unit 13 gives a movement signal to the movement unit 12 in accordance with a control signal given from the pattern input unit 60. The moving unit 12 includes driving mechanisms 16, 17, and 18 that are held by a drawing apparatus main body (not shown) on one surface and move the moving stage 15 in the X, Y, and Z directions according to the movement signal on a different surface. In this figure, the drive mechanism is shown as blocks 16, 17 and 18 in the sense of three-axis drive of X, Y, and Z, but this is a structure used in an arbitrary mechanism such as a stepper, for example. Things can be adopted. The displacement of the moving stage 15 is measured using, for example, a high-resolution measuring device such as a laser interferometer, and is fed back to the drive and irradiation control unit 13 to be precisely controlled. The substrate 8 is attached to the moving stage 15.
[0010]
Prior to the drawing, the moving unit 12 is placed on the surface of the resist layer 11 of the substrate 8 on which the probe 21a-21d is drawn by the Z-axis drive mechanism 18 in accordance with the proximity signal given from the drive and irradiation control unit 13. On the other hand, the moving stage 15 is moved until the predetermined position is reached, and the resist layer 11 of the substrate 8 and the probes 21a-21d are brought close to each other. At this time, an appropriate voltage is applied to the probes 21a to 21d, and the approach is stopped when the detection current of any of the probes reaches a predetermined value.
[0011]
After the tilt correction is performed, the moving stage 15 is moved on the XY plane by the X-axis drive mechanism 16 and the Y-axis drive mechanism 17 to draw a pattern on the resist layer 11 of the substrate 8. While drawing the pattern, the moving part 12 is used so that the magnitude of the current is monitored by using the probes 21a and 21d at both ends so that the distance between the resist layer 11 and the probe is maintained at an appropriate value. Is controlled by the drive and irradiation control unit 13 so as to continue the position control in the Z-axis direction.
[0012]
The substrate 8 is a glass substrate 9, a conductive layer 10 in which chromium is deposited from 20 nm to 100 nm, a resist layer 11 having a thickness of about 10 nm to 100 nm (for example, a negative resist which is a mixed resist of poly (vinylphenol) and azide ( A layer coated with RD2100N) manufactured by Hitachi Chemical Co., Ltd. The resist used for the resist layer 11 may be a mixed resist of a novolac phenol resin and a photosensitizer, a chemically amplified resist, or polymethyl methacrylate. The substrate 9 can be made of any material desired to be processed, such as silicon or doped silicon. When doped silicon is used for the substrate 9, the conductive layer 10 may be omitted because the substrate 9 itself is conductive. The conductive layer 10 is electrically grounded so that a current flows through the resist layer 11 by a voltage applied to the probe. In the case of the conductive substrate 9, the substrate 9 may be directly grounded.
[0013]
2A is a perspective view showing the cantilever and its holding portion of the drawing apparatus of FIG. 1, and FIG. 2B is a plan view seen from the abdominal surface side of the cantilever. The probes 21a-22d are provided at the tip of spring portions 22a-22d as cantilevers, and conductive films 23a-23d are formed on one surface of the spring portions 22a-22d. These conductive films are connected to the voltage application unit 7 and the current detection unit 6 through a connector (not shown). The probe needles 21a-22d and the spring portions 22a-22d are held by a holder 24, and these are integrally formed using, for example, a silicon single crystal using a fine processing technique. These may also be silicon oxide and silicon nitride. Piezo elements 25 and 26 that perform tilt correction and movement for approach are provided on the surface of the holder 24 on which the cantilever is not provided. It is appropriate that the radius of curvature of the tip of the probe 21 is 10 nm to 100 nm, the spring constant of the spring portion 22 is 0.05 N / m to 5 N / m, and the resonance frequency is 10 kHz to 50 kHz. More detailed data on these parameters will be described later.
[0014]
The tip position of each probe 21a-21d facing the substrate 8 can be within a variation range of 50 nm or less, depending on the accuracy of the work, and can be said to be substantially on the same line. The conductive film 23 is a titanium thin film having a thickness of 10 nm to 50 nm formed by vapor deposition. In addition to titanium, tungsten, molybdenum, titanium carbide, tungsten carbide, molybdenum carbide, or conductive diamond may be used.
[0015]
Next, drawing procedures using the drawing apparatus shown in FIGS. 1 and 2 will be described together. Drawing is an approach to the probe of the substrate 8 as a first stage, a tilt correction of the probe as a second stage, and finally a drawing procedure.
[0016]
As described above, first, after the substrate 8 is attached to the moving stage 12, an appropriate voltage is applied to the probe 21 a-21 d by the voltage application unit 7, and these currents are detected by the current detection unit 6. The moving stage 12 is moved in the Z-axis direction under the control of the drive and irradiation control unit 13 until the current of any probe reaches a predetermined value, and the substrate 8 is brought close to the probe. At this time, the voltage V applied between the probes 21a and 21d at both ends and the substrate 8 is changed by the voltage application unit 7, and the current I flowing at that time is detected by the current detection unit 6, and I / (dV / The capacitance between the probe and the substrate may be estimated by calculating the capacitance according to dt).
[0017]
Next, a signal is given from the drive and irradiation control unit 13 to the inclination correction unit 5 so as to eliminate the difference between the currents of both the probes 21a and 21d at both ends, and the piezo elements 25 and 26 are controlled to control these probes. To eliminate the inclination between the line connecting the two and the plane of the substrate 8. Alternatively, the inclination may be calculated by calculating the electrostatic capacity, estimating the inclination from the distance, giving a signal from the drive and irradiation control unit 13 to the inclination correction unit 5, and controlling the piezo elements 25 and 26 to correct the inclination.
[0018]
The distance between each probe 21a-21d and the substrate 8 becomes equal to or less than a preset value, and the process of drawing is started after the correction of the inclination is completed. The set value of the distance between each probe 21a-21d and the substrate 8 at this stage is suitably 10 nm to 1 μm.
[0019]
Next, drawing will be described. For drawing, while driving the substrate 8 on the XY plane with the moving stage 12, a voltage corresponding to a drawing pattern given from the pattern input unit 60 is driven between the probes 21 c and 21 d and the conductive layer 10. This is performed by applying from the voltage application unit 7 under control. As a result, a current flows through the resist layer 11 immediately below the probes 21c and 21d, and the resist molecules react to form a latent image in the resist layer 11. The applied voltage of the voltage application unit 7 is changed by the drive and irradiation control unit 13, and the current detected by the current detection unit 6 as the irradiation dose (irradiation current) or the charge / discharge current due to the capacitance between the probe and the substrate So that the corrected current becomes constant. This can be controlled in various ways, but specific examples are listed below.
[0020]
(1) When controlling the current I, the voltage value represented by (Equation 1) is output.
[0021]
[Expression 1]

[0022]
Here, Gi is a feedback gain, and Is is a set current.
[0023]
(2) When controlling the power P = IV, the voltage value represented by (Equation 2) is output.
[0024]
[Expression 2]

[0025]
Here, Gp is a feedback gain, and Ps is a set power.
[0026]
(3) When considering the electrostatic capacitance C existing between the probe 21a-21d and the spring portions 22a-22d and the substrate 9, the charge / discharge current represented by (Equation 3) when the voltage V changes. Flows.
[0027]
[Equation 3]

[0028]
Therefore, considering this, the output voltage at the time of current control represented by (Equation 1) is
[0029]
[Expression 4]

[0030]
It becomes.
[0031]
Also, the output voltage at the time of power control expressed by (Equation 2) is
[0032]
[Equation 5]

[0033]
It becomes.
[0034]
(4) Further, the feedback control system formed by the current detection unit 6 and the drive and irradiation control unit 13 has a time constant τ, and high frequency components are removed. This also acts as a filter for the charge / discharge current Ic, and in order to accurately remove the influence of Ic, considering the time constant τ, (Equation 4) is
[0035]
[Formula 6]

[0036]
(Equation 5) becomes
[0037]
[Expression 7]

[0038]
It becomes.
[0039]
In this embodiment, the substrate 8 coated with the resist RD2100N having a thickness of 100 nm is moved at 0.1 mm / s, and the voltage applied between the probes 21c and 21d and the conductive layer 10 is a current around −85V. Was 100 pA, that is, the irradiation dose was 10 nC / cm.
[0040]
During the formation of a latent image on the resist layer 11, the probes 21 b and 21 c receive a Coulomb force acting between the probes 21 b and 21 c and the conductive layer 10 by the voltage applied to create the latent image. Due to the Coulomb force, the spring portions 22 b and 22 c are deformed, and the probes are in contact with the resist layer 11. The latent image does not form in accordance with the pattern to be created. Since no current is required in the portion where the latent image is not formed, it is not necessary to apply a voltage to the probe at this position. However, when the voltage is set to 0 V, the Coulomb force acting on the probe is lost, so that the spring portions 22b and 22c are not deformed and separated from the surface of the resist layer 11. Then, when a voltage is applied again at a position where a latent image is to be formed, the Coulomb force suddenly acts on the probe, and the spring portions 22b and 22c are suddenly deformed, so that the probe is applied to the resist layer 11. There is a high possibility that the probe will be violently damaged and the probe will be damaged. Therefore, when drawing a portion where a latent image is not produced, it is preferable to control the voltage so that a current that is so small that a latent image is not formed flows. In this example, when the applied voltage was -70 V or less, the current was 1 pA or less and no latent image was formed. On the other hand, it is natural that the position monitoring current by the probes at both ends is less than this level, but a smaller current is applied so that each spring part 22a, 22d is not deformed by Coulomb force as much as possible. It is good to use only a voltage.
[0041]
The development of the latent image drawn by the present invention will be briefly described as follows.
[0042]
Develop by soaking for 1 minute in 0.83% tetramethylammonium hydroxide solution. As a result, when a negative resist is used for the resist layer 11, only the resist for which the latent image is produced remains undissolved, and a convex line resist pattern having a line width of 100 nm can be produced. When a positive resist was used for the resist layer 11, only the resist for which the latent image was produced was dissolved, and a concave line resist pattern having a line width of 100 nm could be produced. FIG. 6 shows the relationship between the pattern width and the irradiation dose in the embodiment of the present invention. Since the pattern width depends on the irradiation dose, it is possible to produce an arbitrary pattern width of 100 nm or more by adjusting the irradiation dose. Show.
[0043]
In the present invention, drawing is an approach to the probe of the substrate 8 as a first step, a tilt correction of the probe as a second step, and finally a drawing procedure. Of the many probes, the probe at the end is used for positioning and monitoring the position during drawing, and other probes are used for drawing, so that the probe used for drawing is simply current controlled. Just do it. Moreover, the present invention is a useful technique in that it can be drawn only by current control without strict position control because the probe is deformed by Coulomb force when forming a latent image. I was able to provide it. In the description of the above embodiment, the number of probes is only four, but the more the number of probes, the greater the merit of the present invention. In the above-described embodiment, the approach of the substrate 8 and the probe is assumed to move the substrate 8 in the Z-axis direction. However, the piezoelectric elements 25 and 26 of the holder 24 holding the probe are used for this approach. Can also be used.
[0044]
Example II
FIG. 3A is a plan view seen from the abdominal surface side of a cantilever and another embodiment of the cantilever of the drawing apparatus of the present invention and its holding portion, and FIG. 3B is a side view thereof. As can be seen by comparing FIG. 3 (a) and FIG. 3 (b) with FIG. 2 (a) and FIG. 2 (b), 31a, 31b ---- 31k --- 31n, 32a --- 32m This is an example in which the probe portion 30 has a large number of spring portions of 3jm. These spring portions are respectively held by holders 34 a, 34 b, 34 c and 34 d, and each holder is held by a common holder 35. The conductive wire of each probe is represented by 33 as a representative, but these are led out by a connector (not shown) and necessary connections are made. As shown in FIG. 3B, piezo elements 36a to 36c corresponding to the piezo elements 25 and 26 shown in FIG. In the figure, the piezo element 36a is not visible. The piezo elements 36a and 36b are used for tilt control in the X direction in the figure using the probes 31a and 31n, and the piezo elements 36b and 36c are used in tilt control in the Y direction in the figure using the probe 31n and 3jm. . ,
Example III
FIG. 4A is a perspective view showing an embodiment of an integrated probe driving device group and its holding portion that can be employed in the present invention, and FIG. 4B is a cross-sectional view showing the structure of the probe driving device of that unit. It is.
[0045]
FIG. 4A shows a configuration of an embodiment in which a large number of probe driving devices 420 shown in FIG. 4B are arranged in an XY two-dimensional manner and held by the coarse movement mechanism 410 so that the position of the probe can be controlled. FIG. A large number of probe driving devices 420 corresponding to the probes and the spring portions shown in FIGS. 3A and 3B are arranged in an XY two-dimensional manner. A configuration in which the group of probe driving devices 420 is held by the coarse movement mechanism 410 corresponding to the common holder 35 and the piezoelectric elements 36a to 36c in FIGS. 3A and 3B so that the position of the probe can be controlled. Indicates.
[0046]
In this manner, not only approach and tilt correction but also XY two-dimensional driving for drawing can be performed by the coarse movement mechanism 410. Of course, it is natural that each function may be divided and burdened as in the above-described embodiment.
[0047]
Although the detailed description of the configuration of the coarse movement mechanism 410 in the present embodiment is omitted, as in the case of the probe drive device 420 shown in FIG. If devised, it can be created easily. Conversely, a simple combination of a holder and a piezo element as shown in FIG.
[0048]
Hereinafter, an example of the probe driving device 420 will be described with reference to FIG. FIG. 4B is a block diagram disclosing an example of the structure of the probe driving device 420. In this embodiment, the first integrated electrostatic actuator 2100 and the second integrated electrostatic actuator 2500 are connected in cascade. That is, the fixed electrode 270 of the second actuator 2500 is connected to the movable electrode 210 of the first actuator 2100, and the probe 220 is provided at the end of the extending portion of the movable electrode 250 of the second actuator 2500. Further, the first integrated electrostatic actuator of this embodiment can be driven in the X direction and the Y direction by one actuator. Accordingly, the first actuator 2100 controls the movement in the X direction and the Y direction, and the second actuator 2500 controls the movement in the Z direction.
[0049]
The fixed electrode 211 of the actuator 2100 is formed at the distal end of the base 230, and the spring 240 including the leaf spring 241 and the connecting portion 242 connecting the same is also formed at the distal end of the base 230. The movable electrode 210 of the actuator 2100 is coupled to the connecting portion 242 of the spring 240. The other end portion of the fixed electrode 211 of the actuator 2100 is connected to the base end portion 232, and a spring 240 ′ including a leaf spring 241 ′ and a connecting portion 242 ′ connecting the leaf spring 241 ′ is formed here. The movable electrode 210 of the actuator 2100 is coupled to the coupling portion of the spring 240 ′ and the Z drive shaft portion 270 is coupled to the coupling portion of the spring 240 ′. Since the driving force acting between the fixed electrode 211 and the movable electrode 210 of the actuator 2100 deflects the springs 240 and 240 ′, respectively, the Z drive shaft portion 270 is in the X direction (in accordance with the drive force by the actuator 2100 ( Take a position in the Y direction (perpendicular to the paper surface) and the Y direction (parallel to the paper surface in the left-right direction).
[0050]
The integrated electrostatic actuator 2500 is formed at the tip of the Z drive shaft portion 270 by using the Z drive shaft portion 270 as the base portion 230 described above. In other words, a fixed electrode 251 supported by a frame portion 270 ′ integrated with the Z drive shaft portion 270 is formed, and a spring comprising a plate spring 261 having the frame portion 270 ′ as a fixed portion and a connecting portion 262 connecting the same. A spring 260 ′ is formed which includes 260 and a leaf spring 261 ′ and a connecting portion 262 ′ that connects the leaf spring 261 ′. A probe support portion 280 to which the probe 220 is attached is connected to the connection portion 263 of the spring 260 and the connection portion 263 ′ of the spring 260 ′, and the movable electrode 250 of the actuator 2500 is connected to the probe support portion 280. Is done. The driving force acting between the fixed electrode 251 and the movable electrode 250 of the actuator 2500 deflects the springs 260 and 260 ', respectively, so that the probe support portion 280 is in the Z direction (parallel to the paper surface and up and down). Take position. In this embodiment, the Z drive shaft portion 270 is controlled in the X direction and the Y direction by the actuator 2100, and in this state, the probe is controlled in the Z direction.
[0051]
In the example of the figure, in order to simplify the display of the figure, the wiring to each electrode and the wiring of the voltage to be applied to the probe are omitted, and further, the description about the necessity of insulation is omitted. Since it can be realized with an arbitrary configuration as necessary, further description is omitted.
[0052]
In the embodiment of FIG. 4B, this structure can be integrated and arranged in one dimension in parallel by a semiconductor microfabrication technique on the basis of a single substrate, and the base 230 and the base end. 232 may be directly attached on one base substrate, and an integrated probe driving device having an integrated electrostatic actuator in which other portions are processed by a semiconductor micromachining technique and separated from the substrate. It can be configured. Therefore, it is very easy to obtain an integrated probe driving device arranged in one dimension in parallel on one chip.
[0053]
It is also easy to construct an integrated probe driving device that is arranged two-dimensionally by stacking a plurality of integrated probe driving device structures arranged in parallel one-dimensionally on one chip of this embodiment. is there.
[0054]
In the present invention, the multiple probe driving devices 420 only need to perform approach, tilt correction, and position control during drawing as a whole, and thus control the positions of the individual probes 220 of the multiple probe driving devices. That is not essential in nature. However, the fact that this can be done is useful in view of partial drawing correction and the like.
[0055]
Example IV
Next, an embodiment of a drawing apparatus for drawing by rotating the substrate will be described with reference to FIG. Although the present embodiment is not essentially different from the drawing apparatus of the embodiment shown in FIG. 1, the substrate 8 is rotated, and the fine drawing head unit 1 is moved to one side of the substrate 8 accordingly. Are arranged. Those common to both embodiments are indicated by the same reference numerals. In the embodiment shown in FIG. 1, the moving unit 12 is moved to the rotation driving unit 61, the moving stage 15 is moved to the rotating stage 65, and the driving mechanisms 16, 17 and 18 are moved to the rotating shaft 66. Replaced. The drive and irradiation control unit 13 gives a rotation signal to the rotation drive unit 61 in accordance with a control signal given from the pattern input unit 60. This rotation rotates the rotary stage 65 via the rotary shaft 66, and information regarding this rotation is fed back to the drive and irradiation control unit 13 and precisely controlled.
[0056]
Also in the present embodiment, a proximity operation is performed prior to drawing, but this operation moves the rotation shaft 66 upward (Z-axis drive) according to a signal given to the rotation drive unit 61 by the drive and irradiation control unit 13. ) When the rotary stage 65 is moved until it reaches a predetermined position with respect to the surface of the resist layer 11 of the substrate 8 on which the probe 21a-21d is drawn, the proximity is completed. Thereafter, tilt correction is performed. Subsequently, the rotary stage 65 is rotated and a pattern is drawn on the resist layer 11 of the substrate 8. While drawing the pattern, the rotational drive unit is used so that the magnitude of the current is monitored and the distance between the resist layer 11 and the probe is maintained at an appropriate value by using the probes 21a and 21d at both ends. 61 is controlled by the drive and irradiation controller 13 so as to continue the position control in the Z-axis direction. Further, in this embodiment, compared to the embodiment shown in FIG. 1, it is considered that an operation of correcting the tilt due to rotation by the correction unit 5 is frequently required during drawing. Can be executed without any problem.
[0057]
In this embodiment, since the fine drawing head unit 1 is relatively small as compared with the substrate 8, if the substrate 8 is rotated 360 degrees by the substrate rotation stage 65 and then developed, for example, a perfect circle that can be used for a guide groove of an optical disk. A resist pattern can be produced. Further, when the substrate 8 is rotated 360 degrees with the substrate rotation stage 65 while the fine drawing head unit 1 is moved left and right in the direction of the rotation center around a certain point while continuing to irradiate a constant irradiation dose, a resist pattern having a waveform is formed. Can be made in a circular shape. Alternatively, when the irradiation dose is developed after rotating the substrate 8 360 degrees with the substrate rotation stage 65 while switching the irradiation dose that can form a latent image and the irradiation dose that cannot form a latent image, the fine drawing head unit 1 is fixed. A dot pattern that can be used for data information and address information of an optical disc can be formed in a circle. If this operation is continued and a pattern is drawn on the entire area of the substrate 8, the pattern can be drawn in the entire region in 20 hours at a rotation speed of 50 revolutions per hour with a track pitch of 100 nm and a track pitch of 100 nm.
[0058]
By combining the methods described above, an original optical disk can be produced. Further, a concave dot resist pattern is formed on the entire surface of the disk, and a magnetic material such as iron, cobalt, nickel, iron-cobalt alloy, cobalt-nickel alloy, iron-nickel alloy is formed in the dot pattern by electroplating using the conductive layer 10 as an electrode. Can be used to produce an ultra-high-density magnetic recording medium in which magnetic dots are isolated recording bits.
[0059]
Example V
Next, FIG. 7 is a perspective view showing different embodiments of the cantilever and its holding portion shown in FIG.
[0060]
In this embodiment, the detection of the displacement of the cantilevers 22a and 22d at both ends is performed by an optical lever type atomic force microscope. 83 and 81 are light sources, and 84 and 82 are light receiving devices. In the optical lever type atomic force microscope, it is not necessary to pass a current between the probes 21 a and 21 d and the substrate 8, so that it is not necessary to apply a voltage to the probe 21. Therefore, the spring portion is not deformed by receiving the Coulomb force due to the voltage applied to the probes 21a and 21d. For this reason, when an optical lever type atomic force microscope is used for position monitoring by the probe at both ends, stable position control and tilt control can be realized.
[0061]
Example VI
FIG. 8A is a plan view of the cantilever shown in FIG. 3A and an embodiment of a modification of the holding portion, as viewed from the abdominal surface side, FIG. 8B is a side view thereof, and FIG. FIG.
[0062]
In this embodiment, as can be seen by comparing FIGS. 3A and 8A, FIG. 3B and FIG. 8B, the holders 34a to 34d are provided for each row of cantilevers 34a. The cantilever is inclined with respect to the holder while being divided into two parts, ', 34a'-34d', 34d ', and the directions are the same. Further, as in the embodiment of FIG. 7, the displacement of the end cantilevers 31a, 31n and 3jm is detected by an optical lever type atomic force microscope. Reference numerals 91, 93 and 95 denote light sources, and reference numerals 92, 94 and 96 denote light receiving devices. In the present embodiment, since the cantilever has the same inclination direction, when the substrate 8 is moved, the spring part of the cantilever effectively acts on the unevenness of the surface of the resist 11 to move the probe. This has the effect of reducing the possibility of damage. Further, since the displacement is detected by an optical lever type atomic force microscope, there is an effect that stable position control and tilt control can be realized as in the previous embodiment. In this embodiment, as is apparent from FIG. 9, a part of the holder 35 is cut for light transmission of an optical lever type atomic force microscope for detecting the displacement of the probe 3jm. And light must pass through.
[0063]
Example VII
FIG. 10A is a plan view seen from the abdominal surface side of the cantilever and another embodiment of the modification of the cantilever shown in FIG. 3A and its holding portion, and FIG. 10B is a side view thereof.
[0064]
In the present embodiment, the proximity and position monitoring of the probe unit 30 and the substrate 8 can be clearly understood by comparing FIGS. 8A and 10A, FIG. 8B and FIG. 10B. Instead of detecting the displacement of the cantilevers 31a, 31n and 3jm at the end by an optical lever type atomic force microscope, electrodes 41, 42 and 43 are provided at three positions on the surface of the holder 35 on the cantilever side. This is an example in which the detection is performed by detecting the capacitance between the substrate and the conductor portion of the substrate.
[0065]
In this embodiment, at the stage where the substrate is set on the moving stage 15, the capacitance cannot be detected substantially, but the capacitance can be detected when the proximity advances and approaches to some extent, so that the proximity can be completed using this. . In addition, position monitoring during drawing can also be performed.
[0066]
Example VIII
FIG. 11A is a plan view seen from the abdominal surface side of the cantilever and another example of modification of the cantilever and its holding portion shown in FIG. 3A, and FIG. 11B is a side view thereof.
[0067]
In the present embodiment, the positional relationship between the probe portion 30 and the substrate 8 can be clearly understood by comparing FIGS. 8 (a) and 11 (a), FIG. 8 (b) and FIG. 10 (b). It is directly held by sliders 51, 52, 53 and 54 interposed between them. In order to keep these sliders in contact with the substrate 8 with a weak force, weak spring devices 55, 56, 57 and 58 (57 and 58 are not shown) are provided at the four corners on the back of the holder 35.
[0068]
In this embodiment, after the substrate 8 is set on the moving stage 15, the holder 35 is pressed against the substrate 8 with a weak force at a close stage. After that, if the state is maintained, there is no need to perform position control during drawing.
[0069]
Example IX
FIG. 12A is a plan view seen from the abdominal surface side of the cantilever showing another embodiment of the cantilever and its holding portion shown in FIG. FIG. 12B is a cross-sectional view taken in the direction of the arrow at the position aa ′ of the region where the spring portion is not formed, and FIG. 12C is the region where the spring portion is present. FIG. 12D is a cross-sectional view as viewed in the direction of the arrow at a position cc ′ where there is no spring portion in the region where the spring portion is formed. .
[0070]
In the present embodiment, a large number of spring portions 31a, 31b ---- 31k --- 31n, 32a --- 32m --- 3jm described with reference to FIGS. This is an example in which the probe unit 30 is directly formed. That is, these spring portions are formed in a thinned region by cutting the common holder 35, and are divided by notches so that each spring portion is independent. In FIG. 12, reference numerals 31b, 31i, and 31s represent probes, respectively, and 33 represents a lead-out line of each probe. 51 to 54 correspond to the slider of Example VIII shown in FIG. 11, and 55 to 58 (57 and 58 are not shown) correspond to weak spring devices, respectively. Also in the present embodiment, as in the embodiment VIII, the state in which the probe and the substrate 8 are in contact with each other with a weak force is maintained by the slider and the weak spring device.
[0071]
As is clear from FIG. 12 (c) and FIG. 12 (d), in the region where the spring portion is formed, the common holder 35 is scraped into a thin plate state, and there is no spring portion in this region. In position, the common holder 35 is cut away. Therefore, a spring portion having a sufficient spring constant can be formed, and the necessary deformation can be sufficiently obtained when a current is passed through the probe.
[0072]
Also in this embodiment, after the substrate 8 is set on the moving stage 15, the holder 35 is pressed against the substrate 8 with a weak force at a close stage. After that, if this state is maintained, the position control during drawing need not be particularly performed, as in the embodiment VIII.
[0073]
Example of cantilever parameters
FIG. 13A is a plan view showing an example of cantilever parameters for explaining displacement due to the Coulomb force of the cantilever, and FIG. 13B is a side view thereof. The cantilever shown in this example has a width W, a length L, a thickness t, and a probe length L ′ of about 10 to 15 μm. In this example, the Coulomb force was roughly calculated by a parallel plate capacitor formed between the conductive layer 10 and the cantilever 22 of FIG.
[0074]
First, the force F acting between the electrode plates of the parallel plate capacitor is expressed by the following (Equation 8). Where ε ₀ Is the dielectric constant of the dielectric existing between the electrode plates, S is the area of the electrode plates, V is the voltage between the electrode plates, and d is the distance between the electrode plates.
[0075]
[Equation 8]

[0076]
Now, three samples A-C with different spring constants are prepared for the cantilever, and the parameters are as follows.
[0077]
[Table 1]

[0078]
Here, the table below shows the results of calculating the Coulomb force acting on the cantilever, where S is the area of the cantilever holding the probe.
[0079]
[Table 2]

[0080]
Now, paying attention to the example in which the Coulomb force is 630 nN, the result of calculating the deformation amount of the sample is as shown in the table below.
[0081]
[Table 3]

[0082]
As can be seen from this example, even when the voltage is 40 V, such a large force and deformation occur. Therefore, when −80 V is applied in the above drawing, the cantilever is greatly deformed, The position control of the cantilever is meaningless, and conversely, this deformation stably follows the cantilever against the non-uniform thickness of the resist layer 11. This is the important point of interest of the present invention.
[0083]
Next, FIG. 14A is a plan view showing an example of other parameters of the cantilever for explaining the displacement of the cantilever due to the Coulomb force, and FIG. 14B is a side view thereof. The cantilever shown in this example is a two-point supported beam. Now, the tip width W is 4 μm, the thickness t is 0.4 μm, the length L is 200 μm and 100 μm, and the spring constant is 0.02 and 0.09. The calculation was made for two cases where the probe length L ′ was about 6 μm. In these two examples, the structure and shape of the tip are the same, and only the length L is different. In this example, L = 100 μm, and the area of the probe on the cantilever surface is 3100 μm. ² When the distance d between the electrode plates was 6 μm and the applied voltage was 40 V, the Coulomb force was 610 nN. If this cantilever has such a force, the cantilever deforms by about 6800 nm as in the cantilever of FIG. Therefore, even with this type of cantilever, the deformation can be fully utilized.
[0084]
The probe driving device shown in FIGS. 4A and 4B does not have a cantilever and does not constitute a parallel plate capacitor as in these examples, but the springs 261 and 261 ′ are extremely soft. The Coulomb force acting on the probe can be used sufficiently.
[0085]
【The invention's effect】
As described above, according to the present invention, the position control of the probe with respect to the substrate is performed only at the end of the group of the probes, and the other probes only need to be controlled by the current. A drawing apparatus capable of being created can be easily created.
[0086]
Further, since the proximity and tilt control need not be strict, the simplest structure may be a structure as shown in FIG. 10, FIG. 11 or FIG. Although not shown, an electrode may be disposed on the back surface of the cantilever so as to detect the displacement of the cantilever by changing the capacitance between the two.
[Brief description of the drawings]
FIG. 1 is a block diagram showing an example configuration concept of a drawing apparatus of the present invention.
2A is a perspective view showing the cantilever and its holding portion of the drawing apparatus of FIG. 1, and FIG. 2B is a plan view seen from the abdominal surface side of the cantilever.
FIG. 3A is a plan view of the cantilever of the drawing apparatus of the present invention and another embodiment of the holding portion as seen from the ventral side of the cantilever, and FIG. 3B is a side view thereof.
4A is a perspective view showing an embodiment of an integrated probe driving device group and its holding portion that can be employed in the present invention, and FIG. 4B is a cross-sectional view showing the structure of the probe driving device of that unit. .
FIG. 5 is a block diagram showing the configuration concept of another embodiment of the drawing apparatus of the present invention.
FIG. 6 is a diagram showing an example of a relationship between an irradiation dose of current irradiated from a probe and a line width of a substrate in the drawing apparatus of the present invention.
7 is a perspective view showing different embodiments of the cantilever and its holding portion shown in FIG.
8A is a plan view of the cantilever shown in FIG. 3A and an embodiment of a modification of the holding portion, as viewed from the abdominal surface side, and FIG. 8B is a side view thereof.
9 is a rear view of the embodiment of the cantilever and the holding portion shown in FIG.
10A is a plan view seen from the abdominal surface side of the cantilever and another embodiment of the cantilever and its holding portion shown in FIG. 3A, and FIG. 10B is a side view thereof.
11A is a plan view seen from the abdominal surface side of the cantilever and another modification of the cantilever shown in FIG. 3A and its holding portion, and FIG. 11B is a side view thereof.
12A is a plan view seen from the abdominal surface side of the cantilever and another example of the cantilever shown in FIG. 3A and its holding portion, and FIG. 12B is a view where a spring portion is formed. (C) is a cross-sectional view seen in the direction of the arrow at a position bb ′ where the spring portion is located in the region where the spring portion is formed, and (D) is sectional drawing seen in the arrow direction in position cc 'without a spring part in the area | region in which the spring part is formed.
FIG. 13A is a plan view showing an example of cantilever parameters for explaining displacement due to the Coulomb force of the cantilever, and FIG. 13B is a side view thereof.
14A is a plan view showing another example of the cantilever parameters for explaining the displacement of the cantilever due to the Coulomb force, and FIG. 14B is a side view thereof.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Fine drawing head part, 4 ... Fine drawing part, 5 ... Inclination correction part, 6 ... Current detection part, 7 ... Voltage application part, 8 ... Substrate, 9 ... Glass board | substrate, 10 ... Conductive layer 10, 11 ... Resist layer, 12 ... moving unit, 13 ... driving and irradiation control unit, 15 ... moving stage 15, 16 ... X-axis driving mechanism, 17 ... Y-axis driving mechanism, 18 ... Z-axis driving mechanism, 21a, 21b, 21c, 21d ... conductive probe, 22a, 22b, 22c, 22d ... conductive spring part, 23a-23d ... conductive film, 24 ... holder, 25, 26 ... piezo element, 30 ... fine drawing part, 31a, 31b ----- 31k --- 31n, 32a --- 32m --- 3jm ... Spring part, 33 ... Probe conductive wire, 34a, 34b, 34c and 34d ... Holder, 35 ... Common holder, 36a-36c ... piezo elements, 41, 42 and 43 ... electrodes, 5 , 52, 53 and 54 ... slider, 55, 56, 57 and 58 ... weak spring device, 60 ... pattern input unit, 61 ... rotary drive unit, 65 ... rotary stage, 66 ... rotary shaft, 83, 81 ... light source, 82 , 84: Light receiving device, 91, 93 and 95 ... Light source, 92, 94 and 96 ... Light receiving device, 220 ... Probe, 410 ... Coarse movement mechanism, 420 ... Probe driving device, 2100 ... First integrated electrostatic Actuator, 2500... Second integrated electrostatic actuator.

Claims (23)

A plurality of probes, a plurality of spring portions for holding each of the plurality of probes, a holder for collectively holding the spring portions of the plurality of probes, and moving the holder between the probe and the drawing target A coarse movement mechanism for relatively approaching a substrate whose surface is covered with a resist layer, a movement mechanism for correcting the inclination of the probe at the end of the plurality of probes and the substrate, and the substrate A drive mechanism for XY driving a plurality of probes relatively on the substrate surface, a control device for controlling each of the mechanisms, a device for supplying current to the probe, and supplied to the probe Current detection means, a control device for matching the target value and detection value of the current supplied to the probe, and a pattern input for giving a target value corresponding to the drawing pattern to each control device A drawing apparatus comprising the apparatus. The plurality of probes are arranged in a line at a predetermined interval, and the probes at both ends of the probes are used to correct the inclination with the substrate and to control the distance between the probe and the substrate being drawn. The drawing apparatus according to claim 1, wherein the drawing device is used and another probe is used for drawing. The plurality of probes are arranged on the XY plane at a predetermined interval, and the probes at these three ends correct the inclination of the substrate and control the distance between the probe and the substrate during drawing. The drawing apparatus according to claim 1, wherein the other probe is used for drawing. 3. The drawing apparatus according to claim 2, wherein the displacement of the probe used for correcting the inclination with the substrate and controlling the distance between the probe and the substrate during drawing is detected by an electric current. 3. The drawing apparatus according to claim 2, wherein the displacement of the probe used for correcting the tilt with respect to the substrate and controlling the distance between the probe and the substrate during drawing is detected by an optical lever type atomic force microscope. . The displacement of the probe used to correct the tilt with the substrate and to control the distance between the probe and the substrate being drawn is detected by the change in capacitance between the electrode placed on the back of the cantilever and the cantilever. The drawing apparatus according to claim 2, which is a thing. 4. The drawing apparatus according to claim 3, wherein the displacement of the probe used for correcting the tilt with the substrate and controlling the distance between the probe and the substrate during drawing is detected by an electric current. 4. The drawing apparatus according to claim 3, wherein the displacement of the probe used for correcting the tilt with the substrate and controlling the distance between the probe and the substrate during drawing is detected by an optical lever type atomic force microscope. . The displacement of the probe used to correct the tilt with the substrate and to control the distance between the probe and the substrate being drawn is detected by the change in capacitance between the electrode placed on the back of the cantilever and the cantilever. The drawing apparatus according to claim 3, which is a thing. The drawing apparatus according to claim 2, wherein the current of the probe used for drawing is set to a different value between a portion where a latent image is created and a portion where a latent image is not created. 4. The drawing apparatus according to claim 3, wherein the probe current used for drawing has different values for a portion where a latent image is created and a portion where a latent image is not created. A plurality of probes arranged one-dimensionally, a plurality of spring portions for holding each of the plurality of probes, a holder for collectively holding the spring portions of the plurality of probes, and moving the holder to move the probe A coarse movement mechanism for relatively bringing the needle and the substrate whose surface is covered with the resist layer to be drawn relatively close, for correcting the inclination of the probe and the substrate at the ends of the plurality of probes A moving mechanism, a drive mechanism for rotating the substrate with respect to the probe, a control device for controlling the mechanisms, a device for supplying current to the probe, and a current supplied to the probe Detecting means, a control device for matching the target value of the current supplied to the probe with the detected value, and a pattern input device for giving a target value corresponding to the drawing pattern to each control device. Drawing device. The probes at both ends of the plurality of probes are used for correcting the inclination with the substrate and controlling the distance between the probe being drawn and the substrate, and other probes are used for drawing. 12 drawing devices. A plurality of probes, a plurality of spring portions for holding each of the plurality of probes, a holder for collectively holding the spring portions of the plurality of probes, and moving the holder between the probe and the drawing target A coarse movement mechanism for relatively approaching a substrate whose surface is covered with a resist layer, a movement mechanism for correcting the inclination of the probe at the end of the plurality of probes and the substrate, and the substrate A drive mechanism for XY driving a plurality of probes relatively on the substrate surface, a control device for controlling each of the mechanisms, a device for supplying current to the probe, and supplied to the probe Current detection means, a control device for matching the target value and detection value of the current supplied to the probe, and a pattern input for giving a target value corresponding to the drawing pattern to each control device A drawing apparatus comprising an apparatus, wherein the probe is on a single substrate Formed at the tip of a movable part of an electromechanical conversion device comprising a plurality of formed electrostatic actuators, one of the two actuators is formed by a fixed electrode in cooperation with the movable electrode of the other actuator A drawing apparatus having a cascade structure and one of the two actuators being capable of driving a movable electrode in two orthogonal directions. The plurality of probes are arranged in a line at a predetermined interval, and the probes at both ends of the probes are used to correct the inclination with the substrate and to control the distance between the probe and the substrate being drawn. The drawing apparatus according to claim 14, wherein the other probe is used for drawing. The plurality of probes are arranged on the XY plane at a predetermined interval, and the probes at these three ends correct the inclination of the substrate and control the distance between the probe and the substrate during drawing. The drawing apparatus according to claim 14, wherein the other probe is used for drawing. 16. The drawing apparatus according to claim 15, wherein the displacement of the probe used for correcting the tilt with the substrate and controlling the distance between the probe and the substrate during drawing is detected by an electric current. The drawing apparatus according to claim 16, wherein the displacement of the probe used for correcting the inclination with the substrate and controlling the distance between the probe and the substrate during drawing is detected by an electric current. 15. The drawing apparatus according to claim 14, wherein the current of the probe used for drawing is set to a different value between a portion where a latent image is created and a portion where a latent image is not created. The drawing apparatus according to claim 15, wherein the current of the probe used for drawing is set to a different value between a portion where a latent image is created and a portion where a latent image is not created. A plurality of probes, a plurality of spring portions for holding each of the plurality of probes, a holder for collectively holding the spring portions of the plurality of probes, and moving the holder between the probe and the drawing target A coarse movement mechanism for relatively bringing a substrate whose surface is covered with a resist layer, and a sandwich between a holder and a substrate whose surface is covered with a resist layer to be drawn. To a slider for holding a relative position, a drive mechanism for XY driving the substrate and the plurality of probes relatively on the substrate surface, a control device for controlling each mechanism, and the probe A device for supplying current, a means for detecting a current supplied to the probe, a control device for matching a target value and a detected value of the current supplied to the probe, and drawing for each of the control devices; Pattern input device to give the target value according to the pattern Drawing device comprising a. The plurality of probes are arranged in a line at a predetermined interval, and the capacitance between the electrodes provided at both ends of the holders of these probes and the conductor portion of the substrate is the probe. 2. The drawing apparatus according to claim 1, which is used for correcting a tilt between the needle and the substrate and controlling a distance between the probe and the substrate during drawing. The plurality of probes are arranged on the XY plane at a predetermined interval, and the electrostatic capacitance between the electrodes provided at the three ends of the holders of these probes and the conductor portion of the substrate is 2. The drawing apparatus according to claim 1, wherein the drawing apparatus is used for correcting an inclination between the probe and the substrate and controlling a distance between the probe and the substrate during drawing.

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