TW471061B - Forming method of biconvex microlens of image sensor - Google Patents
Forming method of biconvex microlens of image sensor Download PDFInfo
- Publication number
- TW471061B TW471061B TW90100324A TW90100324A TW471061B TW 471061 B TW471061 B TW 471061B TW 90100324 A TW90100324 A TW 90100324A TW 90100324 A TW90100324 A TW 90100324A TW 471061 B TW471061 B TW 471061B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- forming
- microlens
- patent application
- scope
- Prior art date
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
471061 案號 90100324 曰 修正 五、發明說明(1) 5 - 1發明領域: 且 本發明是有關於一種影像感測器元件的製造方法 特別是有關於一種雙凸微透鏡之形成方法。 5-2發明背景: 影像感測器(image sensor)具有一用以偵測光之光 感測元件(photodetector(,其可用於數位相機(digital camera)、掃描器(scanner)等設備上。光感測元件的反 應機制是將入射光(incident light)之光子(photon)轉 換成電子-電洞對(electron hole pair),當吸收之光子 數量越多時,則所產生之電流也會成比例增加。微透鏡( m i c r ο 1 e n s )已經廣泛地用在相關的光感測元件設施中,尤 其是在光電二極體(photodiode)與電荷輕合元件(charge coupled device ; CCD)的操作應用上。一般而言,微透鏡 的目的係將一光線之像素值聚焦於半導體^件丄,藉此增 加展示物的感光度,換句話說’一微透鏡係用以將入射光 聚焦於一光電二極體上。 固態影像感測器包含了複數個形成於一 元件中 之光電二極體,光電二極體能藉由光電人換 成一電子訊號以產生一電荷。固態 、將,a τ _ 〜如像感測器也包含了471061 Case No. 90100324 Amendment V. Description of the Invention (1) 5-1 Field of Invention: The present invention relates to a method for manufacturing an image sensor element, and more particularly to a method for forming a lenticular microlens. 5-2 Background of the Invention: The image sensor has a photodetector (photodetector) that can be used to detect light. It can be used in digital cameras, scanners and other devices. The response mechanism of the sensing element is to convert incident light photons into electron-electron hole pairs. As the number of absorbed photons increases, the current generated will also be proportional. Increasing. Microlenses (microcr ο 1 ens) have been widely used in related light sensing device facilities, especially in operating applications of photodiodes and charge coupled devices (CCDs) In general, the purpose of a microlens is to focus the pixel value of a ray on a semiconductor element, thereby increasing the sensitivity of the display. In other words, 'a microlens is used to focus incident light on a photoelectric element. On the polar body. The solid-state image sensor includes a plurality of photoelectric diodes formed in an element. The photoelectric diode can be replaced by an electronic signal to generate an electric charge. τ _ ~ such as the image sensor also contains
471061 --f ^ ,90100324_—日 修正_ 五、發明說明(2) 感測放大器(sense a^lifier; sA),彩色濾鏡層(c〇lor f 1 11 e r 1 a y e r)與覆蓋於光電二極體上之微透鏡,感測放 大器能感測從電荷耦合元件所傳輸之影像訊號以便於產生 一電子讯號。在一固悲影像感測器中,每個光電二極體都 分配有一個微透鏡’從一物體上發出的光線經由微透鏡連 續地聚焦於半導體元件之光電二極體上以產生一電子訊號 如第一 A圖至第一 C圖所示,顯示一習知的微透鏡製程 的結構剖面圖。首先提供一基底1 0 0,其上依序形成保護 層 110 ( passivation layer)、彩色濾鏡層 120 ( c〇1 〇r filter layer)與當成透明層(transparent layer)之平坦 層(planner layer) 130。然後,形成一微透鏡層 (microlens 1 ayer) 1 4 0於平坦層(planner layer) 130上 。其次’藉由微影製程以曝光微透鏡層(m i c r ο 1 e n s 1 a y e r )1 4 0並形成一微透鏡區150。之後,藉由一熱製程來處理 微透鏡區1 5 0,以便於形成具有向上凸出的弧狀外型之平 凸微透鏡1 6 0。 如第一 C圖所示,很明顯地入射光1 7 0係藉由平凸微透 鏡1 6 0來聚焦,然後穿過平坦層1 3 0、彩色濾鏡層1 2 0與保 護層1 1 0直到入射光進入基底1 0 0之中。因此,無庸置疑地 ,為了形成具有高靈敏度光感測器,必須儘可能地加大入 射光1 7 0照射在基底1 〇 0之投影面積,藉以吸收最大化之光471061 --f ^, 90100324_—day correction_ V. Description of the invention (2) Sense amplifier (sense a ^ lifier; sA), color filter layer (colol f 1 11 er 1 ayer) and cover on photoelectric two With the micro lens on the polar body, the sense amplifier can sense the image signal transmitted from the charge-coupled element to generate an electronic signal. In a solid image sensor, each photodiode is assigned a microlens'. The light emitted from an object is continuously focused on the photodiode of the semiconductor element through the microlens to generate an electronic signal. As shown in FIGS. 1A to 1C, cross-sectional views of the structure of a conventional microlens manufacturing process are shown. First, a substrate 100 is provided, on which a passivation layer 110, a color filter layer 120, and a transparent layer as a transparent layer are formed in this order. 130. Then, a microlens 1 ayer 140 is formed on the planner layer 130. Secondly, the micro-lens layer (m i c r ο 1 e n s 1 a y e r) 1 4 0 is exposed through a lithography process and a micro-lens region 150 is formed. Thereafter, the microlens area 150 is processed by a thermal process so as to form a plano-convex microlens 160 having an arc shape protruding upward. As shown in the first figure C, it is obvious that the incident light 170 is focused by the plano-convex microlens 16 0, and then passes through the flat layer 1 3 0, the color filter layer 1 2 0, and the protective layer 1 1 0 until the incident light enters the substrate 100. Therefore, there is no doubt that in order to form a light sensor with high sensitivity, it is necessary to increase the projection area of the incident light 170 on the substrate 1000 as much as possible, so as to absorb the maximum light.
第5頁 471061 案號 90100324 年_η 曰 五、發明說明(3) 子數量。不論 質不佳,亦即 之光電二極體 。因此,很難 上述之平凸微 ,其接觸面積 。對於改良微 念之一係為導 面積,以增加 如何,由於上述之平凸微透鏡丨6 〇的聚隹性 難以將入射光1 70毫無失誤地聚焦於相^應 上,以致於造成光散失與解析度惡化等因u 最佳化此傳統影像感測器之靈敏度。再 μ 透鏡1 6 0與爭坦層1 3 0之間的接觸面為—者, 較小’此將造成微透鏡材質的黏附性質$面 透鏡之黏附性質與聚焦性質而言,其& Λ差 入一新的微透鏡之結構,使其具有較^本概 黏附性質與聚焦性質。 、 ^ 的表 雲於上述之種種原因’我們更需要—種新的微 形成方法。以便於提昇後續製程的產率以及良率。、見之 5 - 3發明目的及概述:Page 5 471061 Case No. 90100324 _η Five. Description of the invention (3) Number of children. Regardless of poor quality, that is, the photodiode. Therefore, it is difficult for the above-mentioned micro-convex and micro-convex to contact area. One of the improved micro-minds is the guide area to increase how, due to the convergent nature of the above-mentioned plano-convex microlenses, it is difficult to focus the incident light 1 70 on the response without error, so that it causes Factors such as dispersion and resolution degradation optimize the sensitivity of this traditional image sensor. Then the contact surface between the lens 160 and the battle layer 130 is the smaller, which will cause the adhesion properties of the microlens material. In terms of the adhesion properties and focusing properties of the surface lens, its & Λ The structure of a new microlens is inferred, which makes it have a substantially adhesive property and a focusing property. Tables ^ and ^ are based on the above reasons ’we need more — a new micro-formation method. In order to improve the yield and yield of subsequent processes. 5. See the purpose and summary of the invention:
景中,傳統的半導體製程之 本發明提供-方法可用以克服;J 鑒於上述之發明背 其所產生的諸多缺點, 製程上的問題。 本發明的目的是在提供一種影像感測哭 成方法。本發明能形成一種微透鏡,以便ς 1,鏡的形 地最大化於基底之反應區中。所以本發明可右 7光有致 程上的良率。 有$文地提高製In the context, the present invention provides a method for a traditional semiconductor manufacturing process that can be used to overcome it; J In view of the above-mentioned inventions, there are many disadvantages and process problems. The object of the present invention is to provide a method for image sensing crying. The invention can form a micro lens so as to maximize the shape of the mirror in the reaction area of the substrate. Therefore, the present invention has a yield rate in the process. $ Literacy improvement system
471061 __案號 90100324 年月 日 修正___ 五、發明說明(4) 本發明的另一目的是在提供一種影像感測器之微透鏡 的形成方法。本發明能形成一種雙凸微透鏡以取代傳統的 平凸微透鏡。本發明之雙凸微透鏡能增加聚焦性質,以提 昇影像強度(i m a g e i n t e n s i t y)。此外,本發明也能夠藉 由微透鏡的雙凸外型,增加平 面積,以便於提昇雙凸微透鏡 本發明的再一目的是在提 透鏡的形成方法。本發明係在 刻製程使得平坦層具有弧狀凹 鏡。因此,本發明的方法簡易 方法可適用於深次微米的技術 根據以上所述之目的,本 之雙凸微透鏡的形成方法。在 供一基底,其上依序形成保護 然後,於平坦層上定義複數個 接者,錯由複數個光阻層當 層進彳于餘刻,以使得平坦層呈 在移除複數個光阻層之後,形 弧狀凹陷之表面上。隨後,藉 並形成複數個微透鏡區。最後 鏡區,以便於形成複數個具有 坦層與微透鏡之間的接觸表 的黏附性質。 供一種影像感測器之雙凸微 形成微透鏡層之前,藉由|虫 陷之表面,以形成雙凸微透 而符合經濟上的效益,且本 中。 發明揭示了一種影像感測器 本發明之實施例中,首先提 層、彩色濾鏡層與平坦層。 以一預定距離區隔之光阻層 成複數個蝕刻罩幕並對平坦 有複數個弧狀凹陷之表面。 成一微透鏡層於平坦層及其 由微影製程以曝光微透鏡層 ,進行一熱製程並處理微透 雙凸外型之雙凸微透鏡。471061 __Case No. 90100324 Rev. ___ V. Description of the invention (4) Another object of the present invention is to provide a method for forming a microlens of an image sensor. The invention can form a biconvex microlens to replace the traditional plano-convex microlens. The lenticular microlens of the present invention can increase the focusing property to improve the image intensity (i m a g e i n t e n s i t y). In addition, the present invention can also increase the flat area by the lenticular appearance of the microlenses, so as to improve the lenticular microlenses. Another object of the present invention is to improve the lens forming method. In the present invention, the flat layer has an arc-shaped concave mirror during the engraving process. Therefore, the simple method of the present invention can be applied to the technique of deep sub-micron. According to the above-mentioned purpose, the method of forming the lenticular microlens of the present invention. A substrate is sequentially formed with protection thereon. Then, a plurality of contacts are defined on the flat layer, and the photoresist layer is mistakenly formed when the layer enters the rest, so that the flat layer is removing the photoresist. After the layer, the arc-shaped depressions on the surface. Subsequently, a plurality of microlens areas are borrowed and formed. Finally, the mirror area is used to form a plurality of adhesive properties with a contact surface between the lamella and the microlens. For a biconvex micro of an image sensor, before forming a microlens layer, a worm-contaminated surface is used to form a biconvex micro-transmission, which is in line with economic benefits. The invention discloses an image sensor. In an embodiment of the present invention, a layer, a color filter layer and a flat layer are first provided. The photoresist layers separated by a predetermined distance form a plurality of etching masks and flatten a surface having a plurality of arc-shaped depressions. A micro-lens layer is formed on a flat layer and the micro-lithography process is used to expose the micro-lens layer, and a thermal process is performed to process the micro-transparent bi-convex micro-lens.
第7頁Page 7
471061 --j號 90100324_^ —年月 日_修正 五、發明說明(5) 5 - 4發明的詳細說明:471061 --j number 90100324_ ^-year month day _ amendment V. Description of invention (5) 5-4 Detailed description of invention:
本發明在此所探討的方向為一種影像感測器之雙凸透 鏡的形成方法。為了能徹底地瞭解本發明,將在下列的描 述中提出詳盡的步驟。顯然地,本發明的施行並未限定於 半體元件之技藝者所熟習的特殊細節。另一方面,眾所 周知的製程步驟並未描述於細節中,以避免造成本發明不 必要之限制。本發明的較桂實施例會詳細描述如下,然而 除了這些詳細描述之外,本發明還可以廣泛地施行在其他 的實施例中,且本發明的範圍不受限定,其以之後的專利 範圍為準。 參考第二A圖與第二B圖所示,在本發明之實施例中, 首先提供一具有複數個光感測元件之基底2 0 0,其上依序 形成一保護層2 1 0、一彩色濾鏡層2 2 0與一平坦層2 3 0,其 中’平坦層2 3 0係使用一透光材質(transparent material )’例如,Ethylenglycolmonoethylether acetate ( ECA )' Methacryl resin^ Multifunctional aery 1 monomer° 然後’於平坦層2 3 0上定義複數個以一預定距離區隔之光 阻層2 4 0。接著,藉由複數個光阻層2 4 〇當成複數個蝕刻罩 幕並對平坦層2 3 0進行蝕刻以形成複數個外形係為凹狀表 面之餘刻區,且複數個姓刻區係位於複數個光感測元件的The present invention is directed to a method for forming a lenticular lens of an image sensor. In order to fully understand the present invention, detailed steps will be proposed in the following description. Obviously, the practice of the present invention is not limited to the specific details familiar to those skilled in the art of half-body elements. On the other hand, well-known process steps have not been described in detail to avoid unnecessary limitations of the present invention. The more specific embodiments of the present invention will be described in detail as follows. However, in addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited. The later patent scope shall prevail. . Referring to FIG. 2A and FIG. 2B, in an embodiment of the present invention, a substrate 2 0 with a plurality of light sensing elements is first provided, and a protective layer 2 1 0, a A color filter layer 2 2 0 and a flat layer 2 3 0, where 'the flat layer 2 3 0 uses a transparent material', for example, Ethylenglycolmonoethylether acetate (ECA) 'Methacryl resin ^ Multifunctional aery 1 monomer ° and then 'A plurality of photoresist layers 2 4 0 separated by a predetermined distance are defined on the flat layer 2 3 0. Next, the plurality of photoresist layers 2 4 0 are used as a plurality of etching masks and the flat layer 2 3 is etched to form a plurality of remaining carved areas whose outer shapes are concave surfaces, and the plurality of last carved areas are located at A plurality of light sensing elements
471061 __案號 90100324_年__ 月 g_____ 五、發明說明(6) 位置上,其中’上述之平坦層2 3 0的蝕刻製程可使用濕式 蝕刻法或乾式蝕刻法以使得平坦層2 3 0的表面向下凹陷, 如第二B圖所示。 參考第二C圖與第二D圖所示,在本實施例中,去除複 數個光阻層24 0之後,將一感光材質(photosensitive m a t e r i a 1 )旋塗於平坦層2 3 0及其I虫刻區上,以形成一感光 層2 5 0,其中,上述之感光層2 5 0的形成厚度約小於5微米 。然後,藉由微影製程以曝光感光層2 5 0並形成複數個感 光區2 6 0,其中’上述之複數個感光區2 6 0係位於平坦層 2 3 0的#刻區之凹狀表面上。最後’進行一熱製程以處理 感光區2 6 0,並形成複數個雙凸外型之雙凸微透鏡2 7 0,如 第二E圖所示。471061 __Case No. 90100324_year__ monthg_____ V. Description of the invention (6) In the position, the etching process of the above-mentioned flat layer 2 3 0 can use a wet etching method or a dry etching method to make the flat layer 2 3 The surface of 0 is recessed downward, as shown in the second B figure. Referring to FIG. 2C and FIG. 2D, in this embodiment, after removing a plurality of photoresist layers 240, a photosensitive material (spinning materia 1) is spin-coated on the planar layer 2 3 0 and its insects. A photosensitive layer 250 is formed on the engraved area. The thickness of the photosensitive layer 250 described above is less than about 5 microns. Then, the lithographic process is used to expose the photosensitive layer 2 50 and form a plurality of photosensitive areas 2 60, wherein the above-mentioned plurality of photosensitive areas 2 6 0 are located on the concave surface of the #etched area of the flat layer 2 3 0 on. Finally, a thermal process is performed to process the photosensitive area 2 60 and a plurality of biconvex microlenses 2 7 0 are formed, as shown in the second E diagram.
在本發明的實施例中’提供一種形成影像感測器之微 透鏡的新方法。本發明能形成一種微透鏡,以便於將入射 光有效地最大化於基底之反應區中。所以本發明可有效地 提咼製程上的良率。此外,本發明能藉由一種雙凸微透鏡 的形成以取代傳統的平凸微透鏡,且本發明之雙凸微透鏡 能増加聚焦性質,以提昇影像強度(image intensity)。 再者’本發明也能夠藉由微透鏡的雙凸外型,增加平坦層 與微透鏡之間的接觸表面積,以便於提昇雙凸微透鏡的黏 附性質。…面,本發明係在形成微透鏡 餘刻製程使知平坦層具有弧狀凹陷之表面,以形成雙凸微In an embodiment of the present invention, a new method of forming a microlens of an image sensor is provided. The invention can form a micro-lens so as to effectively maximize the incident light in the reaction area of the substrate. Therefore, the present invention can effectively improve the yield in the process. In addition, the present invention can replace the conventional plano-convex microlens by the formation of a biconvex microlens, and the biconvex microlens of the present invention can add focusing properties to improve image intensity. Furthermore, the present invention can also increase the contact surface area between the flat layer and the microlenses by using the lenticular appearance of the microlenses, so as to improve the adhesion properties of the lenticular microlenses. … Surface, the present invention is to form a micro-lens.
第9頁 471061 案號 90100324 曰 修正 五、發明說明(7) 透鏡。因此,本發明的方法簡易而符合經濟上的效益,且 可適用於深次微米的技術中。對深次微米的製程而言’本 方法為一較佳可行之影像感測器的微透鏡製程。 顯然地,依照上面實施例中的描述,本發明可能有許 多的修正與差異。因此需要在其附加的權利要求項之範圍 内加以理解,除了上述詳細的描述外,本發明還可以廣泛 地在其他的實施例中施行。 上述僅為本發明之較佳實施例而已,並非用以限定本 發明之申請專利範圍;凡其它未脫離本發明所揭示之精神 下所完成的等效改變或修飾,均應包含在下述申請專利範 圍内。Page 9 471061 Case No. 90100324 Amendment V. Description of the invention (7) Lens. Therefore, the method of the present invention is simple and economical, and can be applied to deep sub-micron technology. For deep sub-micron processes, this method is a better and feasible microlens process for image sensors. Obviously, according to the description in the above embodiments, the present invention may have many modifications and differences. Therefore, it needs to be understood within the scope of the appended claims. In addition to the above detailed description, the present invention can be widely implemented in other embodiments. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention should be included in the following application patents Within range.
第10頁 471061 _案號901Q0324_年月日_iMz_ 圖式簡單說明 第一 A圖至第一 C圖為傳統的平凸微透鏡製程之剖面示 意圖;與 第二A圖至第二E圖為說明本發明之一實施例中,雙凸 微透鏡製程之剖面示意圖。 號 符 表 代 之 分 β! J5:口 要 主 οοοοοοοοοοοοοοοο 012345670-—-2 3 4 5 6 7 層 。。鏡 層 。。鏡 。鏡。層區透。 。鏡。。層區透 。層渡層鏡鏡微光。層滤層層鏡鏡微 底護色坦透透凸射底護色坦阻透透凸 基保彩平微微平入基保彩平光微微雙 棒Page 10 471061 _Case No. 901Q0324_ 年月 日 _iMz_ The drawings briefly explain the first A to C are the cross-sectional schematic diagrams of the traditional plano-convex micro lens process; and the second A to E A schematic cross-sectional view illustrating a process of manufacturing a lenticular microlens in one embodiment of the present invention. The number symbol represents the difference β! J5: the main point is οοοοοοοοοοοοοοο 012345670--2 3 4 5 6 7 layers. . Mirror layer. . Mirror. mirror. Layer through. . mirror. . Layer through. The straddle layer mirror is dim. Layer filter layer mirror micro bottom color protection transparent transparent convex bottom color protection transparent transparent convex base
第11頁Page 11
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW90100324A TW471061B (en) | 2001-01-08 | 2001-01-08 | Forming method of biconvex microlens of image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW90100324A TW471061B (en) | 2001-01-08 | 2001-01-08 | Forming method of biconvex microlens of image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW471061B true TW471061B (en) | 2002-01-01 |
Family
ID=21676958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW90100324A TW471061B (en) | 2001-01-08 | 2001-01-08 | Forming method of biconvex microlens of image sensor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW471061B (en) |
-
2001
- 2001-01-08 TW TW90100324A patent/TW471061B/en not_active IP Right Cessation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10054719B2 (en) | Methods for farbricating double-lens structures | |
KR0147401B1 (en) | Solid image sensor and the fabrication method thereof | |
TWI274425B (en) | Image sensor having large micro-lenses at the peripheral regions | |
US7427799B2 (en) | Complementary metal oxide semiconductor image sensor and method for fabricating the same | |
US6495813B1 (en) | Multi-microlens design for semiconductor imaging devices to increase light collection efficiency in the color filter process | |
US20060292731A1 (en) | CMOS image sensor and manufacturing method thereof | |
JP5486838B2 (en) | Lens forming method, semiconductor device manufacturing method, and electronic information device | |
WO2017082429A1 (en) | Solid-state imaging element and method for manufacturing same | |
KR101010375B1 (en) | Image Sensor and Method for Manufacturing thereof | |
JPH04206966A (en) | Production of solid-state image pick up element | |
KR100717281B1 (en) | Method of forming image sensor and the sensor so formed | |
JP2007053318A (en) | Solid-state imaging device and method of manufacturing same | |
TWI222178B (en) | Manufacturing method of image sensor device | |
JP2006003869A (en) | Method for forming microlenses of image sensor | |
JP4998310B2 (en) | Solid-state imaging device and imaging apparatus using the same | |
JP2007305683A (en) | Solid state image sensing element and method for manufacturing the same | |
JP2006196634A (en) | Manufacturing method of color solid state imaging apparatus | |
US20020102498A1 (en) | Method for forming biconvex microlens of image sensor | |
KR100915758B1 (en) | Method for Manufacturing An Image Sensor | |
TW471061B (en) | Forming method of biconvex microlens of image sensor | |
JP2000307090A (en) | Solid-state image sensing device microlens array, solid- state image sensing device provided with it, and method of manufacturing them | |
JP2000156485A (en) | Solid-state image sensing device and manufacture thereof | |
KR100731094B1 (en) | Cmos image sensor and method for fabricating of the same | |
KR0140633B1 (en) | The fabrication method of solid state image sensing device | |
JP2004214672A (en) | Manufacturing method of cmos image sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |