470682 A7 B7 4582twf.doc/005 五、發明説明（/ ) 本發明是有關於一種平坦化製程的裝置與方法，且特 別是有關於一種避免在化學機械硏磨製程中，因硏磨齊 集而使硏磨表面產生細小刮痕（scratch)的裝置與方法。470682 A7 B7 4582twf.doc / 005 V. Description of the invention (/) The present invention relates to a device and method for a flattening process, and in particular to a method for avoiding honing in a chemical mechanical honing process. Device and method for generating fine scratches on honing surface.
在半導體製程技術中’表面平坦化是處理高密度微影 .的一項重要技術；因沒有高低落差的平坦表面，才能避免 曝光散射，而達成精密的導線圖案轉移。平坦化技術主要 有旋塗式玻璃（Spin-On Glass ; SOG)、硼磷矽玻璃（BPSG flow)與化學機械硏磨（CMP)等三種，但在半導體製程技術 進入毫微米（Sub-Half Micron)之後，旋塗式玻璃法及硼磷 矽玻璃已無法滿足所需要的平坦度，所以CMP是現在唯 —能提供超大型積體電路(Very-Large Semiccmductoi· Integration;VLSI) ’ 甚至極大型積體電路（ultra_Large Semiconductor Integration ; ULSI)製程，“全面性平坦化 (Global Planarization)”的一種技術。因爲CMP平坦化技 術’夾著能提供介電層全面性平坦化的能力，已儼然成爲 藥界追求全面性平坦化的焦點製程，所以目前各半導體相 關之工廠與硏究機構’莫不傾全力的開發CMP技術，以 便維持往後的競爭優勢。 基本上，CMP法是利用機械硏磨的原理，配合適當的 化學助劑（Reagent)與硏磨粒，將表面高低起伏不一的輪 廓，一倂加以“磨平，，的平坦化技術。在化學機械硏磨製程 中硏發（S1 u rry)是其中一種極爲重要的材料，由於晶片在 硏磨過程中是利用硏漿與晶片表面的接觸而達到其所硏磨 的目的’因此硏漿的供料速度、溫度、酸驗値控制、大小 本纸張尺度適用中國國家榡準.（CNS ) A4規格（210X297公釐） I I . I 壯衣 I I I I 訂—— I ^1 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 470682 經濟部智慧財產局員工消費合作社印製 4582twf.doc/005 A7 ^〜---— --~~~.__T.______ 五、發明説明（>) 分佈均對化學機械硏磨製程之良劣具有決定性的影響。 請同時參照第1A與1B圖，圖1A與1B分別繪示一 種習知CMP平坦化製程裝置的俯視與側視圖。其中cmP 裝置包括.一硏磨台 10(P〇lish Table); —握柄 1 l(Holder)， 用以抓住被硏磨的晶片l2 ; 一硏磨墊l3(P〇lish Pad) > 舖在硏磨台1 0上；一條管件14，用以輸送硏漿1 5到硏磨 墊13上；以及一具有液泵（Pump)之硏漿輸送控制系統16， 用以將硏發15抽送到管件14中。當CMP進行時，硏磨 台10與握柄1 1分別沿一定的方向旋轉，如圖中之箭號1 7a 與17b所示’且握柄11抓住晶片π的背面18，將晶片12 的正面壓在硏磨墊13上。管件14係將硏漿輸送控制系統 16所打進來的硏漿I5，持續不斷地供應到硏磨墊13上。 所以，CMP程序就是利用硏漿15中的化學助劑，在晶片 12的正面上產生化學反應，使之形成一易硏磨層，再配合 晶片12在硏磨墊13上藉由硏漿15中之硏磨粒輔助之機 械硏磨，將易硏磨層之凸出部份硏除。反覆上述化學反應 與機械硏磨，即可形成一平坦的表面。 在半導體的製作過程中，CMP會被應用於金屬與介電 層的平坦化製程上，在進行金屬的硏磨時，硏漿的pH値 通常須小於4，而當進行介電層的硏磨時，硏漿的pH値 通常會大於10。換句話說，介電層的硏磨會在鹼性的環境 下進行，而金屬的硏磨會在酸性的環境下進行。在CMP 的製程中，比如稀釋濃縮的硏漿，藉以在硏磨進行時可以 提供濃度適當的硏漿；比如在進行預防性檢修（Preventive 本紙浪尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -------裝-------訂------線 (請先閲讀背面之注意事賞再填寫本頁) 470682 4582twf.d〇c/005 A7 B7 五、發明説明（》） maintenance，PM)時，沖洗硏磨機台與硏漿供應管路；又 比如在每個硏磨製程終止以後，淸洗硏磨墊以及晶片的表 面；以及在保養硏磨墊時，拷會用到去離子水。在上述的 g亥些情況下使用去離子水會稀釋硏漿，造成硏漿的酸鹼度 .(pH値）改變’此現象稱爲”pH振盪（pH shocks)”，酸鹼値 的改變會使硏磨粒表面分布的電荷改變，而造成硏磨粒本 身不正吊的聚集’顆粒大的凝聚物（aggl〇nierate)在進f了 CMP製程時’將會在晶片表面造成微小的刮痕。 因此’本發明提供一種調整pH値以改善化學機械硏 磨缺陷的方..法，在硏漿的供應管路上加上P Η値的偵測器 與控制器，並加上一個可以回應pH偵測器偵測的結果， 調整硏漿pH値的化學藥劑供應槽，在偵測器偵測到硏漿 pH値產生變化，偏離進行CMP適當的pH値時，偵測器 會控制化學藥劑供應槽提供化學藥劑，藉以調整硏漿的pH 値，使硏漿的酸鹼度維持在理想的數値。 本發明提供的方法利用化學藥劑調整去離子水的酸鹼 度，避免硏漿的酸鹼度因爲加入中性的去離子水而改變， 使CMP製程可以在固定的酸鹼環境下進行，賴以防止pH 振盪以及避免硏磨粒彼此聚榘，硏磨粒凝膠聚集的情況改 善以後，硏漿輸送系統的預防性檢修的間隔可因此延長， 如此化學機械硏磨機台的使用時間可增長，以增加製程的 效能。 爲讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 本紙張尺度適用中國國家樓準（CNS$ A4規格（210X297公瘦） (請先閲讀背面之注意事項再填寫本頁) 、τ 經濟部智慧財產局員工消費合作社印製 470682 經濟部智慧財產局員工消費合作社印製 五、發明説明（★) 下： 圖式之簡單說明： 第1A-1B圖分別繪示習知一種化學機械硏磨裝置的俯 視與側視圖； 第2圖繪示依照本發明一較佳實施例的一種調整pH 値以改善化學機械硏磨缺陷的裝置圖。 圖示標記說明： 10 硏磨台 11 握柄 12 晶片 13 硏磨墊 14 管件 15 硏漿 16 硏漿輸送控制系統 17a 硏磨台旋轉方向 17b 握柄旋轉方向 18 晶片的背面 20 化學機械硏磨機台 22 硏漿供應槽 24 硏漿緩衝供應槽 26 去離子水供應槽 28 pH値偵測控制器 30 施例 化學藥劑供應槽 6 本紙張尺度適用中國國家標準（CNS ) Α4规格（210Χ 297公釐） — 私衣 、1τ·^線 (請先閲讀背面之注意事項再填寫本頁) 470682 4 5 8 2 twf . doc / Ο Ο 5 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（穸） ' 第2圖繪示依照本發明一較佳實施例的一種調整pH 値以改善化學機械硏磨缺陷的裝置圖。 請參照弟2圖，本發明提供了一種化學機械硏磨裝置， 在傳統的化學機械硏磨系統上加裝了一個pH値偵測控制 器28以及一個化學藥劑供應槽3();其中，傳統的化學機 械硏磨裝置係包括化學機械硏磨機台2〇、硏漿供應槽22、 硏漿緩衝供應槽24以及去離子水供應槽26。 在CMP的製程中’包括稀釋濃縮的硏漿，藉以在硏磨 進行時可以提供濃度適當的硏漿；進行預防性檢修時，沖 洗硏磨機台與硏漿供應管路；在每個硏磨製程終止以後， 淸洗硏磨墊以及晶片的表面；以及在保養硏磨墊時，均會 用到去離子水’所需的去離子水即由去離子水供應槽26 提供’分別透過管路傳送到化學機械硏磨機台20上，或 是傳送到與硏漿供應槽22相通的管路上。 去離子水的加入會使得硏漿的酸鹼度改變，因此pH 値偵測控制器28會偵測自硏漿緩衝供應槽24傳送到化學 機械硏磨機台2 0上的硏漿之pH値，得到第一偵測値。此 外’ pH値偵測控制器28還會偵測傳送到硏漿供應槽22 相通管路上的去離子水之pH値，得到第二偵測値。在進 行化學機械硏磨製程時，所使用的硏漿應該在一理想的酸 鹼環境下’所以pH値偵測控制器28可以透過比較第一偵 測値、第二偵測値與理想pH値的差異，進一.步控制化學 藥劑供應槽3〇釋出化學藥劑，以調整硏漿中的pH値。 在半導體的製作過程中，化學機械硏磨製程通常被應 7 (請先閱讀背面之注意事¾.再填寫本頁) .裝. •線 . - - - ! II — 本紙張尺度適用中國國家標率〈CNS ) A4規格（2i0X297公釐） 經濟部智慧財產局員工消費合作社印製 五、發明説明（厶） 用於金屬或介電層（比如二氧化矽）的平坦化製程上，在進 行金屬的硏磨時，硏漿的pH値約小於4，換句話說金屬 的硏磨會在酸性的環境下進丫了，用以調整pH値的化學試 劑可分爲有機化合物與無機化合物兩種，其中無機化合物 包括亞硝酸，有機化合物包括檸檬酸（citric acid)。在進行 二氧化矽的硏磨時，須在鹼性的環境下進行，硏漿的pH 値約大於1〇 ’用以調整PH値的化學試劑亦可分爲有機化 合物與無機化合物兩種，其中無機化合物包括氫氧化胺與 氫氧化鉀，有機化合物包括胺類（amines)。 本發明在傳統的化學機械硏磨裝置上裝設了一個pH 値偵測控制器’用以偵測硏槳在輸送，與傳送到化學機械 硏磨機台時PH値的變化’藉以在輸送去離子水時一倂加 入化學藥劑以調整其酸鹼度’使傳送到化擧機梂硏磨機台 上的硏漿可以維持固定的pH値，避免因爲pH値振擾而 導致硏漿中硏磨粒聚集的現象，以進一步避免因爲硏磨粒 聚集而導致被硏磨物表面被刮傷的情形。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） I. I I I I I I 裝— I I 訂 線 (請先閲讀背面之注意事項再填寫本頁)In semiconductor process technology, the 'surface flattening' is an important technique for processing high-density lithography. Because there is no flat surface with high or low dropout, exposure scattering can be avoided, and precise wire pattern transfer can be achieved. There are three types of planarization technologies: spin-on glass (SOG), borophosphosilicate glass (BPSG flow), and chemical mechanical honing (CMP). However, semiconductor processing technology has entered the sub-Half Micron. ) After that, the spin-on glass method and borophosphosilicate glass can no longer meet the required flatness, so CMP is now the only way to provide very large-scale integrated circuits (Very-Large Semiccmductoi · Integration; VLSI) Body (Ultra_Large Semiconductor Integration; ULSI) process, a technology of "Global Planarization". Because the CMP planarization technology has sandwiched the ability to provide comprehensive planarization of the dielectric layer, it has become the focus of the pharmaceutical industry's pursuit of comprehensive planarization. At present, all semiconductor-related factories and research institutions are fully committed. Develop CMP technology to maintain future competitive advantage. Basically, the CMP method uses the principle of mechanical honing, with appropriate chemical agents (Reagent) and honing grains, to flatten the contours of the surface with uneven heights. Chemical mechanical honing process (S1 u rry) is one of the most important materials, because the wafer in the honing process is to use the contact between the wafer and the wafer surface to achieve its purpose of honing. Feeding speed, temperature, acid detection, size, paper size are applicable to Chinese national standards. (CNS) A4 size (210X297 mm) II. I Zhuangyi III order-I ^ 1 line (please read the back first Please fill in this page before printing) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 470682 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4582twf.doc / 005 A7 ^ ~ ------~~~ .__ T .______ 5. Description of the invention (>) The distribution has a decisive influence on the quality of the chemical mechanical honing process. Please refer to Figures 1A and 1B at the same time, and Figures 1A and 1B respectively show the top view of a conventional CMP planarization process device With side view. Where cmP The device includes: a honing table 10 (Polish Table);-a handle 1 l (Holder) to hold the honing wafer 12; a honing pad l3 (Polish Pad) > spread on On the honing table 10; a pipe 14 for conveying the mortar 15 to the honing pad 13; and a mortar conveying control system 16 with a pump for pumping the hair 15 to the pipe 14. When CMP is performed, the honing table 10 and the handle 11 are rotated in a certain direction, as shown by arrows 17a and 17b in the figure, and the handle 11 grasps the back surface 18 of the wafer π, and The front side of the wafer 12 is pressed on the honing pad 13. The pipe 14 is a continuous supply of the honing paste I5 driven by the honing slurry control system 16 to the honing pad 13. Therefore, the CMP procedure is to use the honing paste 15 The chemical additive in the substrate produces a chemical reaction on the front surface of the wafer 12 to form an easy honing layer, and then cooperates with the wafer 12 on the honing pad 13 by mechanical honing assisted by the honing grains in the slurry 15 , Remove the protruding part of the easy honing layer. Repeat the above chemical reaction and mechanical honing to form a flat surface. In the semiconductor manufacturing process CMP will be applied to the planarization process of metal and dielectric layers. When honing metal, the pH of the slurry must usually be less than 4, and when the dielectric layer is honing, the pH of the slurry is The honing is usually greater than 10. In other words, the honing of the dielectric layer is performed in an alkaline environment, and the honing of the metal is performed in an acidic environment. In the CMP process, such as diluting and concentrating the slurry Therefore, it is possible to provide the pulp with appropriate concentration when honing; for example, during preventive maintenance (Preventive, the paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm)) ------- install- ----- Order ------ line (please read the note on the back before filling out this page) 470682 4582twf.d〇c / 005 A7 B7 V. Description of the invention (") Maintenance, PM), Rinse the honing machine table and the honing slurry supply line; for example, after each honing process is terminated, honing the honing pad and the surface of the wafer; and when maintaining the honing pad, deionized water is used. In the above cases, the use of deionized water will dilute the pulp, causing the pH of the pulp. (PH 値) changes' This phenomenon is called "pH shocks", and changes in pH will cause The charge distribution on the surface of the abrasive particles changes, which causes the agglomeration of the abrasive particles themselves to be suspended. 'Agglomerates with large particles (when entering the CMP process') will cause minute scratches on the wafer surface. Therefore, the present invention provides a method for adjusting the pH 値 to improve the defects of chemical mechanical honing. A method of adding a detector and controller of PΗ 値 to the supply line of the slurry and adding a device which can respond to the pH detection The result of the tester adjusts the chemical supply tank of the pulp pH 値. When the detector detects a change in the pH of the pulp, the detector will control the chemical supply tank when it deviates from the appropriate pH 値 for CMP. Provide chemical agents to adjust the pH of the mash, so that the pH of the mash is maintained at a desired number. The method provided by the present invention uses chemical agents to adjust the pH of deionized water, avoiding the pH change of the pulp due to the addition of neutral deionized water, so that the CMP process can be performed in a fixed acid and alkali environment, which prevents pH oscillation and To prevent honing grains from agglomerating with each other. After the improvement of the honing grain gelation, the interval between preventive maintenance of the honing slurry conveying system can be extended, so that the use time of the chemical mechanical honing machine can be increased to increase the production process. efficacy. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description. If this paper size applies to China National Building Standard (CNS $ A4) Specifications (210X297 male thin) (Please read the notes on the back before filling out this page), τ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 470682 Printed by the Employee Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs : Brief description of the drawings: Figures 1A-1B show top and side views of a conventional chemical mechanical honing device, respectively; Figure 2 shows a pH adjustment to improve chemistry according to a preferred embodiment of the present invention Device diagram of mechanical honing defects. Symbol description: 10 Honing table 11 Handle 12 Wafer 13 Honing pad 14 Tube 15 Mortar 16 Mortar conveying control system 17a Honing table rotation direction 17b Handle rotation direction 18 Wafer Back 20 Chemical mechanical honing machine table 22 Mortar supply tank 24 Mortar buffer supply trough 26 DI water supply trough 28 pH radon detection controller 30 Examples Chemical supply 6 This paper size applies to China National Standard (CNS) A4 specification (210 × 297 mm) — private clothing, 1τ · ^ thread (please read the precautions on the back before filling this page) 470682 4 5 8 2 twf. Doc / 〇 Ο 5 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (穸) ′ The second figure shows a device diagram for adjusting pH 値 to improve chemical mechanical honing defects according to a preferred embodiment of the present invention Please refer to Figure 2 of the drawings. The present invention provides a chemical mechanical honing device. A conventional pH mechanical detection controller 28 and a chemical supply tank 3 () are added to a conventional chemical mechanical honing system. Among them, The conventional chemical mechanical honing equipment includes a chemical mechanical honing machine table 20, a pulp supply tank 22, a pulp buffer supply tank 24, and a deionized water supply tank 26. In the CMP process, 'concentrated dilute pulp is included In order to provide the appropriate concentration of honing slurry during honing; during preventive maintenance, flush the honing machine table and the honing slurry supply line; after each honing process ends, honing the honing pad and wafer surface And when maintaining the honing pad, the deionized water is used. The required deionized water is provided by the deionized water supply tank 26 and is transmitted to the chemical mechanical honing machine table 20 through the pipeline, or To the pipeline connected to the pulp supply tank 22. The addition of deionized water will change the pH of the pulp, so the pH detection controller 28 will detect that it is transmitted from the pulp buffer supply tank 24 to the chemical mechanical honing machine The pH value of the slurry on the platform 20 is the first detection value. In addition, the pH value detection controller 28 will also detect the pH value of the deionized water sent to the communication line of the slurry supply tank 22 to obtain Second detection 値. In the chemical mechanical honing process, the mortar used should be in an ideal acid-base environment. Therefore, the pH detection controller 28 can compare the first detection 値, the second detection 値 and the ideal pH 透过. The difference is further controlled by the chemical supply tank 30 to release the chemical to adjust the pH in the slurry. In the semiconductor manufacturing process, the chemical mechanical honing process is usually applied (please read the notes on the back ¾ before filling out this page). Assembly. • Wire.---! II — This paper size applies to Chinese national standards Rate (CNS) A4 specification (2i0X297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (厶) For the flattening process of metal or dielectric layers (such as silicon dioxide), When honing, the pH of the pulp is less than about 4, in other words, the honing of the metal will be carried out in an acidic environment. The chemical reagents used to adjust the pH can be divided into organic compounds and inorganic compounds. The inorganic compounds include nitrous acid, and the organic compounds include citric acid. When honing silicon dioxide, it must be performed in an alkaline environment. The pH of the slurry is greater than about 10 '. The chemical reagents used to adjust the pH can also be divided into organic compounds and inorganic compounds, of which Inorganic compounds include amine hydroxide and potassium hydroxide, and organic compounds include amines. The present invention is equipped with a pH 値 detection controller 'on the traditional chemical mechanical honing device' to detect the change of pH 値 when the propeller is transported and when it is transferred to the chemical mechanical honing machine ', so that the When ionized water is added, chemical agents are added to adjust its pH value, so that the slurry transmitted to the hoisting machine honing machine can maintain a fixed pH, avoiding the aggregation of abrasive particles in the slurry due to pH vibration. In order to further avoid the situation that the surface of the object to be hobbed is scratched due to the accumulation of honing particles. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be defined by the scope of the attached patent application. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) I. I I I I I I Installation — I I Threading (Please read the precautions on the back before filling this page)