TW469547B - Thin film interposer and method for manufacturing thereof - Google Patents

Abstract

A thin film interposer includes a multi-layer thin film structure of and conductive bumps located at two sides thereon. The multi-layer thin film structure includes stacking dielectric layers and conductive layers. The method for manufacturing the thin film interposer first provides a substrate. A sacrifice layer is subsequently formed on the substrate in order to manufacture the first set of conductive bumps. The multi-layer thin film structure is then manufactured on the surface of the sacrifice layer, and the second set of conductive bumps is then formed on the surface thereof. Finally the substrate and the sacrifice layer are removed.

Description

469547. ____Case No_8811692Q _Year Month Day_Amendment__ V. Description of the Invention (1) Field of the Invention The present invention relates to connection interfaces, especially thin film interposers with bumps on both sides. . BACKGROUND OF THE INVENTION With the high integration of integrated circuits and the continuous enhancement of their functions, the number of circuit contacts on semiconductor chips has increased significantly and become denser. This trend must be matched with mature construction technology to achieve this. The currently developed Ball Grid Array (BGA) structure and flip-chip structure can meet the requirements of multi-pin structure, but

There is still a problem in the process of the PCB. This is because the circuit contacts in the circuit P are quite difficult and complicated. It is necessary to propose improvements to the conventional technology to improve it. Purpose and summary of the invention The main purpose of Ben Sheming is to succeed as semiconductor device I 1, and to connect the interface, so that he can use intermediaries to assemble other devices. Another object of the present invention is ± half when connecting and inserting; the circuit contact type of the body device is p; =) the connection interface 1 is adjustable according to the present invention,-the ¾ gland is located on both sides thereof, and is conductive and connected. The interface includes a multi-layer thin film structure and a conductive bump-free bump, wherein the multi-layer structure has a ... ... via. The sequence stack contains a plurality of conductive 内 s in the dielectric layer, and the ancient soil recognition of the thin film connection interface is made ^: layer, and the surface of the sacrificial layer is used to form

Page 4: Multi-layer thin layers: The conductive layer forms a multi-layer thin film structure, and then the surface of the structure is made into a first-guide bait, which is connected to I-. And the conductive bumps are finally bottomed. 46 954 Thai 88881929 Amendment V. Description of the Invention (2) Material and sacrificial layer are removed. With the drawings and detailed descriptions below, the features and contents of the present invention can be better understood. Drawing number description 10 12 2 14 14 4 18 18 4 2 0 2 2 2 4 0 4 3 4 4 5 0 5 12 5 4 4 2 4 3 4 6 12 12 4 14 2 16 18 2 substrate perforated dielectric layer conductive Pillar dielectric layer conductive pillar conductive layer conductive pillar multilayer film structure dielectric layer conductive bump multilayer film structure conductive pillar conductive bump sacrificial layer conductive bump contactor L conductive layer contact hole conductive bump dielectric layer film connection interface conductive layer The conductive pillar conductive bump dielectric layer conductive layer conductive layer conductive bump detailed description FIGS. 1 to 6 illustrate a manufacturing process of a preferred embodiment of the present invention. First, as shown in the first figure, a sacrificial layer 12 is formed on a surface of a substrate 10, and the substrate 10 is an aluminum plate, glass, or plastic. In this embodiment, the sacrificial layer 12 is a photoresist, and the mask is used to etch the sacrificial layer 12 to form a plurality of perforations 1 2 2, and a conductive bump 12 is formed therein.

4 6 9 5 4¾ 88116929_ 年月 日 _Character__ 5. Description of the invention (3) 4 To make conductive bumps 1 2 4 You can use electroplating or electrodeless plating to accumulate metals in the perforations 1 2 2 such as gold, nickel or aluminum . Among them, if the conductive bumps 1 2 4 are made by electroplating, a better way is to form a release layer on the surface of the substrate 10 which is easy to peel off from the substrate 10 before forming the sacrificial layer 12, such as aluminum powder, etc. Conductive materials. Next, a multilayer thin film structure is formed on the surface of the sacrificial layer 12. First, a dielectric layer 14 is formed. As shown in the second figure, the dielectric layer 14 has sufficient mechanical strength, preferably polyimide. One method of applying the dielectric layer 14 to the surface of the sacrificial layer 12 is to use spin coating. In the next step, the dielectric layer 14 is etched to form a plurality of contact holes 1 4 2 according to the pattern of the conductive bumps 1 2 4, and conductive pillars 1 4 4 are formed therein to be in contact with the conductive bumps 1 2 4. Preferably, the conductive pillars 1 4 4 are tungsten. After the fabrication of the conductive pillars 1 4 4 is completed, a conductive layer 16 is formed on the surface of the dielectric layer 14 according to the circuit pattern, and becomes the state shown in the third figure. Among them, the conductive layer 16 is a metal, preferably aluminum, Copper, aluminum copper alloy or aluminum silicon copper alloy. The method of forming the conductive layer 16 can be divided into a physical vapor deposition technique (PVD) and a chemical vapor deposition technique (CVD), and then the wiring is carved according to the circuit pattern I. Another method is to deposit a masking layer on the surface of the dielectric layer 14, and then etch the masking layer according to the circuit pattern, and fill the masked portion with metal, and then remove the masking layer completely. Next, a dielectric layer 1 8 is formed on the conductive layer 16, and the contact holes 1 8 2 are formed according to the foregoing steps, and the conductive pillars 1 8 4 are grown into the state shown in the fourth figure. Subsequent fabrication of a conductive layer and a dielectric layer according to the required circuit to form a multilayer thin film structure, the process is as described above.

4 6 9 5 4 · 7 case number RR ^] gg2Q year __s_ amendment V. description of the invention (4) after completing the production of a multilayer thin film structure 'next according to the pattern of the conductive pillars 184 in the surface dielectric layer 18 'Producing a conductive bump 19 on the surface of the dielectric layer 18 and making contact with the conductive pillar 1 8 4' is shown in the fifth figure. The production of conductive bumps 19 can be the same as the steps of forming conductive bumps 1 2 4 by using a photoresist to form a number of perforations, and then accumulating metal in the perforations' or by using a C 4 vaporization process of I β Μ, or printing on a screen. (Scree η P rinting) to make conductive bumps 1 9 e process substrate 1 〇 The sixth figure can correspond to the 18, the electrical bump 1 circuit board configuration of the conductor device, the conductor device contacts Obviously, the changed film on the past can also help to remove it. As shown in the two or six pictures, the density of the conductive layer 2 4, the circuit connection and circuit conditions, the conductive layer is re-introduced, the connection circuit board has a As a result, it will be printed as a half-circuit board like the guide of a 19 conductive cylinder. The remaining half of the circuit is removed from the interface compared to that in the application. The conductive bumps are transmitted to the following table and correspond to one for mounting and connecting the circuit board device borrow circuit board without change. In the present invention or module, the thin film connection interface is almost completed and the sacrificial layer 1 2 has conductive bumps on the surface using an etching solution. As for the device of the film quick connection shown in the block, the configuration of the semiconductor device on the upper surface of the circuit contact, and the 16 and the conductive post 144 electrically connected to the conductive bump 124 can be configured, in other words, this device can An intermediary, capable of providing high-density electronic components 16 can be provided to this thin film line (R e-R 〇ut 丨 ng), different semiconductor surfaces corresponding to the circuit contact configuration can be installed on the same piece Electricity can only be applied to one type of semiconductor device, which is flexible for multi-chip packages

Page 7 46 95 4 7 Case No. 88116929 Amendment V. Description of Invention (5) Strengthening. As shown in the seventh figure, a plurality of conductive layers 20 are fabricated, and a dielectric layer 22 is provided between adjacent conductive layers 20, and is connected to each other through conductive pillars 22 in the dielectric layer 22. Such a structure having a plurality of conductive layers 20 can provide additional additional functions, such as sharing the circuit layout of a semiconductor device. '' This thin-film connection interface with conductive bumps on both sides has the advantage of increasing the speed of signal transmission. As shown in the eighth figure, a thin film connection interface 30 is provided for mounting semiconductor devices A, B, and C. The signals between the semiconductor devices A, B, and C can be transmitted through the bottom thin film connection interface 30. The shorter transmission path helps increase the speed of signal processing. In other embodiments, the order of forming the conductive layer and the dielectric layer is different. The resulting thin film connection interface is shown in Figures 9 and 10. Both sides of the multilayer thin film structure 40 of the device shown in the ninth figure are conductive layers 42. When the multilayer thin film structure 40 is manufactured, the conductive layer 42 and the dielectric layer 43 are sequentially formed to make the multilayer thin film structure. The second side of 40 is a conductive layer 42. The two conductive layers 42 are electrically connected by the conductive pillars 4 3 2 in the dielectric layer 4 3, and the conductive bumps 4 4 and 46 are in contact with the conductive layer 4 2 connected to them. . The bottom surface of the multilayer thin film structure 50 of the device shown in the tenth figure is a dielectric layer 5 1 and the upper surface is a conductive layer 5 2. This is the process of forming the dielectric layer 5 1 in the process of manufacturing the multilayer thin film structure 50. After the conductive pillar 5 1 2 is fabricated, a conductive layer 5 2 is formed, so that the conductive bump 5 4 on the bottom surface is connected to the conductive pillar 5 1 2, and is electrically connected to the conductive bump 5 6 on the upper surface through the conductive layer 5 2. In another embodiment, the conductive layer may be formed first in sequence.

469547 Case No. 88116929 Amendment

Page 10

Claims (1)

4 6 9 5 4 No. 88116929_Year Month__ VI. Application for Patent Scope 1. A method for manufacturing a thin film connection interface, comprising: providing a substrate; forming a sacrificial layer on the surface of the substrate; and making on the sacrificial layer Multiple perforations; making a first set of conductive bumps at each of the perforations; making a multi-layer thin film structure on the sacrificial layer, including one or more conductive layers and a dielectric layer, wherein the dielectric layer is formed with a contact hole A conductive pillar is formed therein; a second group of conductive bumps is made on the surface of the multilayer thin film structure; the substrate is removed; and the sacrificial layer is removed. 2 · The manufacturing method as described in item 1 of the scope of patent application, wherein the first group of conductive bumps is manufactured using an electrodeless plating or plating process. 3. The manufacturing method as described in item 1 of the scope of patent application, which further includes forming a peeling layer 1 which is easy to be peeled off from the substrate and easily conductive before the surface of the substrate is formed before the sacrificial layer is formed and is being removed After the substrate, the release layer is removed. 4. The manufacturing method as described in item 1 of the scope of patent application, wherein the two surfaces of the multilayer thin film structure formed are dielectric layers. 5 _ The manufacturing method described in item 1 of the scope of patent application, wherein the two surfaces of the multilayer thin film structure formed are conductive layers. 6. The manufacturing method according to item 1 of the scope of patent application, wherein the outermost two surfaces of the multilayer thin film structure formed are a conductive layer and a dielectric layer, respectively. 7 · The production method described in item 1 of the scope of patent application, wherein 46 35 4 7 Case No. 8811692 The month of the year _ The legal system in this system. The block description of the electrical item guide 1 group of the second round Fanfanli for exclusive enlistment, apply for special printing, such as green Γ version * ;, net 8 Six power can no longer be, ο the hole block touches the convex to generate electricity The product group of the second group used the contact block of the product to accumulate the step-by-step holes, and the electrode was made by the second method of the first electrode of the second electrode -I]-. IX, step 0; step AV; Bai Li block has been specially requested to apply for guidance, such as the formation of the Xuan Xuan-Oral production process steamed 4 C of the medium A = α layer conductivity and layer dielectric _. Multi-pack or, i-plane bounding boundary enclosing its connection 'Membrane structure thin junction seed film a thin * layer ο more than the above table and two; the film layer is thin and the dielectric layer is more than helium-νδ-a is too penetrating 枉' The electric block and the electric multiconductor are composed of a bimorph and a layer group of electric wires, and their surfaces are continuously connected. The conductive term of the layered electric station is ο face 1. The second most peripheral structure of the special structure is required to apply a thin film, such that the surface boundary of the layer is connected to the thin film. The layered electric field is ο face IX. The second most popular structure in the periphery is requested to be thin and thin. • 2 2 The most popular structure in the periphery of 1-I is not suitable. = A The thin as the layer-Xixi 3 the first-one in the middle. Fan. Please refer to the application for a special deposit such as conductance 4, 1 and 1 for the mid-level boundary interface, electrical interface, and the interface of the thin film and thin film. The description of each item is as follows: o 5 o 1 o 1 o 1 o surface. Jie Yilian's continuous gold film and thin copper silicon itls, 4 gold and 1 copper bronze lg treacherous, tnnj spears please apply for copper, 'Lu Weimei Jin's face film is connected to thin film. Ο 1 -1 . The third party enlists Fan Lilia's reunion, please apply for the application layer. Please refer to the item described in the description of this one—Η-β—the surface interface is connected to the -gc thin film. For tungsten, please apply for Shen Zhu, such as electricity, IX * ^ 1 Page 13