TW469501B - Laser apparatus, exposure apparatus and method, and device manufacturing method - Google Patents

Laser apparatus, exposure apparatus and method, and device manufacturing method Download PDF

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Publication number
TW469501B
TW469501B TW88107680A TW88107680A TW469501B TW 469501 B TW469501 B TW 469501B TW 88107680 A TW88107680 A TW 88107680A TW 88107680 A TW88107680 A TW 88107680A TW 469501 B TW469501 B TW 469501B
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Taiwan
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wavelength
light
laser
aforementioned
fiber
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TW88107680A
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Chinese (zh)
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Tomoko Otsuki
Soichi Yamato
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Nippon Kogaku Kk
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Abstract

The present invention relates to a laser apparatus, an exposure apparatus and method, and a device manufacturing method. The laser apparatus comprises a laser generating portion having a single-wavelength oscillating laser for generating laser light having a single wavelength falling within a wavelength range from an infrared band to a visible band; an optical amplifier having a fiber optical amplifier for amplifying the laser light generated by the laser generating portion; and a wavelength converting portion for converting the wavelength of the amplified laser light into ultraviolet light by using a non-linear optical crystal, whereby ultraviolet light having a single wavelength is generated. Further, the exposure apparatus is characterized in comprising a light source including a first fiber optical amplifier for amplifying laser light emitting from a single-wavelength oscillating laser; a light dividing device for dividing or branching the amplified laser light into plural lights; second fiber optical amplifiers for amplifying the plural divided or branched lights, respectively; and a transmission optical system for transmitting the laser light emitted from the light source to the exposure apparatus.

Description

A7 95 0 1 ____B7___ 五、發明說明（I〉 〔技術領域〕 本發明係有關對於在製造例如半導體元件、液晶顯示 元件、攝影元件（CDD等）、及薄膜磁頭等之微元件的光 刻工程所使用之曝光裝置方面較佳之雷射裝置，更詳細言 之，其係有關可產生低相干性及抑制斑點之紫外線的雷射 裝置、使用該雷射裝置之曝光裝置及方法、以及元件製造 方法。 〔習知技術〕 隨著資訊機器的進步，在半導體積體電路方面更要求 功能的充實、記憶容量之提升及小型化，因此必須提升積 體電路之密集度。爲提升該密集度，雖可將各電路圖案變 小，但電路之最小圖案尺寸通常係由在製造過程所使用之 曝光裝置的性能所決定。 藉由光刻之曝光裝置係將在光罩上精密描繪之電路圖 案，以光學的縮小投影於塗布有光阻之半導體晶圓上，並 將該縮小像轉印於光阻。在此曝光時之晶圓上的最小圖案 尺寸（解析度）R係以用於曝光裝置之光源（曝光用照明 光）的波長λ及投影光學系統的開口數NA而以式（1)表示 ，以及焦點深度DF以式(2)表示。 R=K · λ/ΝΑ (1) DF=A/[2 * (ΝΑ)2] (2) 由式（1)可知’爲了將最小圖案尺寸R變小，可將常數 κ變小、開口數NA變大、或將波長λ變小。 此處’常數Κ係由投影光學系統或照相製版法所決定 4 本紙張尺度適用中國國家標準（CNS)A4規格<210 x 297公釐） --------------f --------1 訂；--------線 <請先間讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 6 95 0 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（1) 之常數，通常爲0.5〜0.8之値。使該常數K變小之方法係 稱爲廣義的超解像。目前爲止，被提議、硏究有投影光學 系統之改良、變形照明、相移屏蔽法等。但，其有對可適 用之圖案限制等之問題點。 另一方面，開口數NA由式（1)其値越大，則最小圖案 尺寸R會越小，同時，由式(2)可知，焦點深度會變淺。因 此，NA値有其界限，一般將兩者配合以〇·5〜0.6程度爲最 適當。. 因此，爲了將最小圖案尺寸R變小，最單純且有效的 方法係將用於曝光之光的波長λ變小。此處，配合實現短 波長化，在製作曝光裝置之光源有以下必備條件。以下針 對該條件加以說明。 一、 需要數瓦的光輸出。此係爲使在積體電路圖案之 曝光、轉印所需之時間保持縮短。 二、 在波長300nm以下之紫外線之場合，作爲曝光裝 置的透鏡所能使用之材料有其限制，而使色收差之挿正變 爲困難。因此，必須要求具有光源的單色性，且光譜之線 寬設爲lpm以下。 三、 爲順應該光譜之線寬的狹帶域化而導致時間的相 '千性增高，若以原來的狹窄的光譜線寬之光照射，則產生 光譜之不必要的干擾圖案。因此，爲抑制產生該種光譜， 在光源有必要降低其空間的相干性。 爲滿足以上這些條件且實現高解析度，對於曝光光源 的短波長化’大量被開發。至目前爲止所檢討之短波長化 5 (請先閱讀背面之注意事項再填寫本頁) ·1--II--^訂-------* 線 本紙張尺度適用中國國家標準（CNS)A4規格<210 x 297公釐） 經濟部智慧財產局員工消費合作社印製 )9501 a? B7 五、發明說明（、） 的方向主要可分爲以下兩種。其一係雷射之振盪波長本身 爲短波長的準分子雷射之曝光裝置的適用開發，另一爲利 用紅外線或可視光雷射之高調波產生之短波長曝光光源的 開發β 其中，使用前者的方法而實用化之作爲短波長光源爲 KrF準分子雷射（波長248ηιη)，現在更進一步作爲短波 長的光源，使用ArF準分子雷射（波長193nm)之曝光裝 置的開發正在進行。但，其具有準分子雷射爲大型、由於 每一脈衝之能量大而導致易造成光學部件的損傷、及由於 使用有毒之氟氣而使雷射之維修更煩雜且費用增加等問題 〇 又，後者之方法，其係利用非線形光學結晶之2次非 線形光學效果，將長波長之光（紅外線、可視光）變換爲 短波長之紫外線的方法。例如在^ Longitudinally diode pumped continuous wave 3.5W green laser (L.Y. Liu, M. Oka, W. Wiechmann and S. Kubota, Optics Letters, vol.19 (1994, p 189)」中，揭示將由半導體激起之固體雷射之光進行波長 變換之雷射光源。在此習知例中，揭示將Nd:YAG雷射所 發射之1064mn的雷射光，使用非線形光學結晶作波長變換 以產生4倍高調波之266nm之光。又，固體雷射係雷射介 質爲固體之雷射的統稱。因此，廣義而言，雖然半導體雷 射亦包含於固體雷射，但通常所謂的固體雷射係指例如 Nd:YAG雷射或紅寶石雷射，藉由光所激起之固體雷射者 。此處亦依此而加以區別。 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------!·- -------—--11 Λ (請先閱讀背面之注意事項再填寫本頁) A7 46950] __B7_ 五、發明說明（4·) 又，將固體雷射作爲曝光裝置的光源之例，被建議將 由產生雷射光之雷射光產生部及將來自該雷射光產生部之 光波長度變換爲紫外線之波長變換部所構成之雷射要素， 成束爲複數矩陣狀之陣列雷射。例如日本專利特開平8-334803號公報，其揭示將來自具有半導體雷射之雷射光產 生部之光，藉由設於波長變換部之非線形光學結晶作波長 變換，並產生紫外線之一雷射要素，使其成束爲複數矩陣 狀（例如10X10)以作爲一紫外線光源之陣列雷射之例。 如前述所構成之陣列雷射，藉由將各獨立之雷射要素 加以複數成束，而可降低各雷射要素之光輸出，而可將裝 置全體之光輸出變爲高輸出=因此，可減輕非線形光學元 件之負擔。但，另一方面，由於各雷射要素爲獨立，在考 慮到對曝光裝置之適用時，在雷射要素全體必須使其振盪 光譜一致。例如，有關各雷射要素即使其振盪光譜線寬爲 lpm以下，在複數之雷射要素全體其相互之波長差不可爲 3pm，而必須爲全寬lpm以下。 因此，例如爲使各雷射要以自律地同一波長的單一縱 模式振盪，必須調整各雷射要素之諧振器長或於諧振器中 插入波長選擇元件。但，這些方法具有其調整十分微妙， 及所構成之雷射要素愈多，則必須有使全體以同一波長振 盪之複雑構造等問題。 另一方面，作爲將複數之雷射以可動方式單一波長化 之方法，習知有注入種子法（例如，依Walter Koechner之 Solid-state Laser Engineering, 3rd Edition, Springer Series in _ 7_ 紙張尺度適用中國國家標準(CNS)A4規格（210 x 297公芨) --------------一11--Ί訂 * ------線 {請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7A7 95 0 1 ____B7___ V. Description of the Invention (I> [Technical Field] The present invention relates to a photolithography laboratory for manufacturing micro-devices such as semiconductor elements, liquid crystal display elements, photographic elements (CDD, etc.), and thin-film magnetic heads. A laser device that is better in terms of the exposure device used is, in more detail, a laser device that can generate low coherence and suppress speckle ultraviolet rays, an exposure device and method using the laser device, and a method for manufacturing a device. [Knowledge technology] With the advancement of information equipment, semiconductor integrated circuits are more demanding for function enhancement, memory capacity improvement, and miniaturization. Therefore, the density of integrated circuits must be increased. In order to increase the density, although Each circuit pattern is made smaller, but the minimum pattern size of the circuit is usually determined by the performance of the exposure device used in the manufacturing process. The exposure device by photolithography is a circuit pattern that will be accurately drawn on a photomask, using optical The reduced image is projected on a semiconductor wafer coated with a photoresist, and the reduced image is transferred to the photoresist. The minimum pattern size (resolution) R is represented by Equation (1) with the wavelength λ of the light source (exposure illumination light) used in the exposure device and the number of openings NA of the projection optical system, and the focal depth DF is represented by Equation ( 2): R = K · λ / ΝΑ (1) DF = A / [2 * (ΝΑ) 2] (2) As can be seen from the formula (1), 'To reduce the minimum pattern size R, the constant κ can be changed. Smaller, the number of openings NA becomes larger, or the wavelength λ becomes smaller. Here, the constant K is determined by the projection optical system or the photoengraving method. 4 The paper size is applicable to the Chinese National Standard (CNS) A4 specification < 210 x 297 mm. Li) -------------- f -------- 1 order; -------- line < Please read the notes on the back before filling in this Page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 95 0 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (1) The constant is usually 0.5 ~ 0.8. The method of making this constant K smaller is called generalized super resolution. So far, proposals have been made for improvements in projection optical systems, anamorphic illumination, and phase-shift shielding methods. However, there are problems such as restrictions on applicable patterns. On the other hand, the larger the number of openings NA in Equation (1) is, the smaller the minimum pattern size R is. At the same time, it can be seen from Equation (2) that the depth of focus becomes shallower. Therefore, NA 値 has its limits, and it is generally best to mix the two with a degree of 0.5 to 0.6. Therefore, in order to reduce the minimum pattern size R, the simplest and most effective method is to reduce the wavelength λ of the light used for exposure. Here, in order to achieve a shorter wavelength, the following requirements are required for the light source of the exposure device. The conditions are explained below. First, it requires several watts of light output. This is to shorten the time required for the exposure and transfer of the integrated circuit pattern. 2. In the case of ultraviolet rays with a wavelength of less than 300 nm, the materials that can be used as the lens of the exposure device have their limitations, which makes it difficult to interpolate the color difference. Therefore, it is necessary to have the monochromaticity of the light source and the line width of the spectrum to be less than lpm. 3. In order to comply with the narrow band domain of the line width of the spectrum and cause the phase of time to increase, if it is illuminated with light with the original narrow line width of the spectrum, an unnecessary interference pattern of the spectrum will be generated. Therefore, in order to suppress the generation of such a spectrum, it is necessary to reduce the spatial coherence of the light source. In order to satisfy these conditions and achieve high resolution, a large number of wavelength reductions of exposure light sources have been developed. Short wavelength 5 reviewed so far (please read the precautions on the back before filling this page) · 1--II-^ Order ------- * The paper size of the paper is applicable to the Chinese national standard (CNS ) A4 specifications < 210 x 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs) 9501 a? B7 5. The directions of the invention description (,) can be divided into the following two types. One is the development of an exposure device for lasers whose oscillation wavelength is a short-wavelength excimer laser, and the other is the development of a short-wavelength exposure light source generated by the high-frequency wave of infrared or visible light lasers. KrF excimer laser (wavelength: 248 nm) is used as a short-wavelength light source for practical use of the method. Now, as a short-wavelength light source, the development of an exposure device using ArF excimer laser (wavelength: 193 nm) is ongoing. However, it has the problems that the excimer laser is large, the optical components are easily damaged due to the large energy of each pulse, and the maintenance of the laser is more complicated and the cost is increased due to the use of toxic fluorine gas. The latter method is a method of transforming long-wavelength light (infrared, visible light) into short-wavelength ultraviolet light by using the secondary non-linear optical effect of the non-linear optical crystal. For example, in ^ Longitudinally diode pumped continuous wave 3.5W green laser (LY Liu, M. Oka, W. Wiechmann and S. Kubota, Optics Letters, vol. 19 (1994, p 189) '', reveals solids that will be excited by semiconductors Laser light The laser light source that performs wavelength conversion. In this conventional example, it is revealed that the laser light of 1064mn emitted by Nd: YAG laser is converted by wavelength using a non-linear optical crystal to generate 4 times the high-frequency 266nm wavelength. Light. In addition, solid lasers are collectively referred to as solid lasers. Therefore, in a broad sense, although semiconductor lasers are also included in solid lasers, the so-called solid lasers generally refer to, for example, Nd: YAG lasers. Or ruby laser, solid lasers excited by light. Here it is also distinguished by this. 6 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) --- ----! ·------------ 11 Λ (Please read the precautions on the back before filling this page) A7 46950] __B7_ V. Description of the invention (4 ·) Also, the solid laser As an example of a light source for an exposure device, it is proposed to produce a laser beam from a laser beam that generates the laser beam. And a laser element composed of a wavelength conversion unit that converts the wavelength of light from the laser light generating unit into ultraviolet rays and bundles them into an array laser of a complex matrix. For example, Japanese Patent Laid-Open No. 8-334803 discloses The light from the laser light generating unit with a semiconductor laser is converted by a non-linear optical crystal provided in the wavelength conversion unit, and a laser element of ultraviolet rays is generated so that it is bundled into a complex matrix (for example, 10X10) Take the example of an array laser as an ultraviolet light source. The array laser constituted as described above can reduce the light output of each laser element by combining a plurality of independent laser elements into a beam, and the device can be The overall light output becomes high output = Therefore, the burden on the non-linear optical element can be reduced. However, since each laser element is independent, when considering the application to an exposure device, the entire laser element must be used. The oscillation spectra are the same. For example, even if the respective laser elements have an oscillation spectrum line width of less than lpm, the wavelength difference between the plural laser elements cannot be different. It must be 3pm and must be less than the full width lpm. Therefore, for example, in order for each laser to oscillate in a single longitudinal mode with the same wavelength autonomously, it is necessary to adjust the resonator length of each laser element or insert a wavelength selection element in the resonator However, these methods have very delicate adjustments, and the more laser elements they constitute, there must be problems such as a complex structure that oscillates the entire wavelength at the same wavelength. On the other hand, as a method of moving a plurality of lasers into a single unit, The method of wavelength conversion is known as the seed injection method (for example, according to Walter Koechner's Solid-state Laser Engineering, 3rd Edition, Springer Series in _ 7_ paper size applies Chinese National Standard (CNS) A4 specification (210 x 297 cm)) -------------- 一 11--Ί 定 * ------ Online (Please read the precautions on the back before filling out this page) A7

4 6 9 5 0 I ______B7 五、發明說明（$ )4 6 9 5 0 I ______B7 V. Description of the invention ($)

Optical Science, Vol.l, Springer-Verlag, ISBN 0-387-53756-2, p 246-249 )。這些係將來自振盪光譜線寬窄的單一雷射電 源之光分歧爲複數之雷射要素，藉由使用該雷射光作爲誘 導波，而使各雷射要素之振盪波長同步，並且使光譜線寬 狹帶域化之方法。但，此方法由於須要將種子光分歧爲各 雷射要素之光學電路及振盪波長之同步控制部，而使構造 變得更複雜的問題。 又，上述之陣列雷射，其雖可比習知之準分子雷射將 裝置全體格段變爲更小，但，要將陣列全體之輸出光束系 控制在數公分以下之封裝係相當困難。又，依此所構成之 陣列雷射，由於在各陣列必須有波長變換部而增加成本， 在構成陣列之雷射要素之一部份產生校準偏移之場合，或 發生所構成之光學元件損傷之場合，必須進行該雷射要素 之調整，故必須再一次將陣列全體分解，取代該雷射要素 ，調整之後再重新將陣列組合等問題。 本發明係爲解決上述習知技術之問題點，例如，在作 爲曝光裝置之紫外線光源，而使用準分子雷射之場合所產 生的問題，如裝置的大型化、有毒氟氣之使用、維修麻煩 及高成本等問題，又，在作爲曝光裝置之紫外線光源，例 如使用Nd:YAG雷射等之固體雷射之高調波之場合，考慮 到非線形光學結晶之損傷，及隨著空間的相干性增加之斑 點產生等問題。又，作爲曝光裝置之紫外線光源，在使用 將產生紫外線之複數之雷射要素，成束爲矩陣狀之陣列雷 射之場合’考慮到包含同步機構之構造複雜性、輸出光束 ______8_ 丨氏張尺度適用中國國家標準（CNS)A4規格（210 x297公釐） (請先閱讀背面之沒意事項再填寫本頁) ---I I---Ί ^ Ji I -----線 i 經濟部智慧財產局員工消費合作社印製 A7 ：69501 __B7_ 五、發明說明（k ) 徑之小型化的困難度及維修麻煩等問題所成者。 即’本發明之第1目的係提供可產生作爲曝光裝置之 光源而被充份地狹帶域化之單一波長的紫外線，使其安定 並作爲空間的相干性低的紫外線輸出，及緊密且處理容易 之雷射裝置。本發明之第2目的係提供使用如此之小型且 處理容易之雷射裝置作爲光源之緊密且自由度高的曝光裝 置。本發明之第3目的係提供不會產生斑點等，並可以高 照明度均一性而進行曝光之曝光方法。本發明之第4目的 係提供藉由曝光裝置之運轉成本降低及維修簡化，而實現 製造成本降低之元件製造方法。本發明之第5目的係提供 可產生使波長寬度狹帶域化之緊密的雷射裝置。 〔發明之詳細說明〕 上述目的係藉由雷射裝置來達成，其特徵係由：產生 單一波長之光的雷射光產生部；具有將前述所產生之雷射 光增幅之纖維光增幅器之至少一段的光增幅器；及將以前 述光增幅器所增幅之光，藉由非線形光學結晶而波長變換 爲紫外線之波長變換部所構成。 具體而言’其係由具有於雷射光產生部狹帶域化之單 一波長振盪（例如’在實施形態中之DFB半導體雷射31 等）’藉由纖維光增幅器（例如，在實施形態中之餌摻雜 纖維光增幅器33、34等）將該單一波長之雷射光增幅，將 來自該纖維增幅器之輸出光，藉由使用非線形光學結晶（ 例如，在實施形態中之503〜505等）之波長變換部而變換 爲紫外線（例如，波長193nm或157nm之紫外線）所構成 ______9_ 氏張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐) ^ ------------《 l-iil 訂..-pi —--* 線 J (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（1) ’而提供本發明目的之緊密之構成，處理容易並產生單一 波長之紫外線之雷射裝置。 又，在本發明，將單一波長振盪雷射（例如，在實施 形態中之DFB半導體雷射11、21及纖維雷射等）之輸出 ，以光分歧手段加以分歧。藉由該光分歧手段（例如，在 實施形態中之分束器14、16等）而分割爲複數之輸出，其 後’設置纖維並將該複數之纖維成束而形成雷射裝置。又 ’作爲光分歧手段’其亦可以單一頻率雷射所產生之雷射 光加以並聯分歧爲複數。 又，藉由具備使時間不重疊之延遲手段，而可獲得彼 此相互獨立之光。其較佳之手段係具有：將單一波長雷射 所產生之雷射光並聯分歧爲複數之光分束器，同時，設置 彼此長度相異之纖維（例如，在實施形態中之纖維15、17 )於該光分束器之射出側。又，作爲彼此長度相異之纖維 的較佳形態，在將並聯分歧後之雷射光通過該纖維之後， 於纖維輸出端使相互延遲間隔爲一定間隔，例如設置各纖 維長度。又，作爲光分歧手段、延遲手段，使用在各所定 時間將各光路之光分配之時分割光分歧手段（Time Division Multiplexer:TDM，例如，在本實施形態中之 TDM23)亦是本發明之形態。 其次，作爲在光分歧手段之輸出側所設置之複數之纖 維，較佳係具有複數之纖維光增幅器（例如，在實施形態 中之餌摻雜纖維光增幅器及鏡摻雜纖維光增幅器18、19等 )之2段的增幅器，第2段之第2纖維光增幅器較佳係使 __10_____ 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) "--I! 線 _ 經濟部智慧財產局員工消費合作社印製， 5 95 0 } A； ____B7 五、發明說明（尤） (請先間讀背面之注意事項再填寫本頁} 用大模式徑纖維所構成。依此，可進一步獲得更高光強度 之雷射光。較佳係將以該纖維光增幅器所增幅之複數之纖 維光增幅器成束。又，亦可在此複數之纖維光增幅器之輸 出端（例如，在實施形態中之纖維輸出端114、29等）， 順應需要而適當地結合無摻雜的纖維。 該纖維輸出端部較佳係將朝向該輸出端面之纖維的芯 徑設爲錐狀並漸漸擴大（例如，在實施形態中之圖之芯部 421)。又，較佳係設置使雷射光透過該纖維輸出端部之窗 部件（例如，在實施形態中之窗部件433、443等）之構成 .。依此構成，可降低在纖維輸出端面之雷射光的電力密度 (每單位面積之光強度），因此，可抑制纖維輸出端部之 損傷。 經濟部智慧財產局員工消費合作社印製 又，在本發明，設於波長變換部之射入側之複數之纖 維，較佳係該纖維之輸出端配合波長變換部之構成，使其 形成1束或複數束之束狀，或形成複數之輸出群（例如， 在實施形態中之光束輸出114、29、501、601、701等）。 又，在波長變換部，藉由1組或複數組之非線形光學結晶 (例如，在第4實施形態中之502〜504及842〜844)產生 基本波之高調波，並輸出紫外線（例如，波長193nm及 157nm之紫外線）。由於可藉由將波長變換部設爲1組而 成爲小型且經濟之構造，及藉由將波長變換部設爲複數組 而降低每組之負荷，因此可實現整體之高輸出化。 又，在使用複數之纖維光增幅器以構成光增幅器時， 爲抑制因各纖維光增幅器之增幅率分散所造成之紫外線輸 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 >95 0 } A7 ______B7 五、發明說明（q ) 出分散’較佳係設置用以監視來自各纖維之輸出光，並且 控制各纖維光增幅器之激起強度的纖維輸出控制手段（例 如，在實施形態中之纖維輸出控制手段405、406等）。又 ，爲使紫外線輸出之光波長一定化爲特定波長，較佳係使 用基本波或波長變換部中之高調波的頻率，並設置單一波 長振盪雷射之振盪波長控制手段（例如，在實施形態中之 波長控制裝置1274等）。 於波長變換部的射入側設置聚光光學元件。該聚光光 學元件之使用形態，可順應光增幅器之輸出狀況而定，例 如’在每一纖維輸出設置聚光光學元件（例如，在實施形 態中之透鏡902、453等），又，在每一成束爲束狀之輸出 群設置聚光化學元件（例如，在實施形態中之透鏡845、 855、463等）等之可適用之使用形態。 但，作爲使紫外線輸出之構成，其係由例如具有作爲 雷射光產生部’發射波長爲L5/zm左右之雷射光，作爲光 增幅器，具有將波長1.5/zm左右之基本波增幅之纖維光增 幅器的光增幅器至少具備1段，並且進行產生被增幅之基 本波之8倍高調波的波長變換部所構成。依此構成，可產 生輸出波長190nm左右之紫外線。又，該輸出光藉由將雷 射光產生部之振盪波長更詳細地規定（例如，1.544〜1.522 Am)，而可設爲ArF準分子雷射同一波長193nm。 又，用以輸出紫外線之另一構成，其係由例如與上述 同樣地，作爲雷射光產生部，發射波長爲l_5/zm左右之雷 射光，作爲光增幅器，具有將波長1.5//m左右之基本波增 12 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） <請先間讀背面之注意事項再填寫本頁) -------------— 1 1^.- 95 0 1 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（) 幅之纖維光增幅器的光增幅器至少具備1段’並且進行產 生被增幅之基本波之10倍高調波的波長變換部所構成°依 此構成，可產生輸出波長150nm左右之紫外線。又’該輸 出光藉由將雷射光產生部之振盪波長更詳細地規定（例如. ，1.57〜1.58 # m)，而可設爲與雷射同一波長157nm。 又，用以輸出紫外線之另一構成，其係由例如作爲雷 射光產生部，發射波長爲l.lvm左右之雷射光，作爲光增 幅器，具有將波長l.l^m左右之基本波增幅之纖維光增幅 器的光增幅器至少1段，並且進行產生被增iff之基本波之 7倍高調波之波長變換部所構成。依此構成，可產生輸出 波長150nm左右之紫外線。又，該輸出光藉由將雷射光產 生之振盪波長更詳細地規定（例如，1.099〜l.l〇6//m)， 可而設與F2雷射同一波長157nm。 又，用以輸出紫外線之另一構成，其係由具有振撮波 長爲990nm左右之半導體雷射或纖維雷射的雷射光產生部 :具有將波長990nm左右之基本波增幅之纖維增幅器之至 少1段的光增幅器；及進行被增幅之基本波之4倍高調波 的波長變換部所構成。依此構成，可獲得與KrF準分子雷 射同一波長248nm之紫外線。 如此進,行產生高調波之波長變換部的構成，如實施形 態所詳述’可獲得各種構成。例如，有關產生基本波之8 倍高調波之波長變換部，該構成例簡單言之，其係可藉由 在全部的波長變換段利用非線形光學結晶之產生2次高調 波（SHG)，作爲基本波—2倍高調波—4倍高調波—g倍 13 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） {請先閱讀背面之注意事項再填寫本頁) - - —1 1— ϊ I I «—^ — — — — —1— —供 I I I - - H - - tfl· f· η - K n - —J I _ _ n _ _ 1 ^ 5 0 1 A7 B7 五、發明說明（丨丨） 高調波之產生3段高調波光路系統（例如，在第4實施形 態中之圖11(a)等）而構成。此構成可以最少之構成段數而 獲得所欲之δ倍高調波。 又’用以獲得8倍高調波之其它較佳構成，在波長變 換段，配合非線形光學結晶之產生和頻率（SFG)而加以 利用’產生基本波之3倍高調波與4倍高調波，藉由將其 產生和頻率而產生基本波之7倍高調波，進而藉由將該7 倍高調波與基本波進行產生和頻率而產生基本波之8倍高 調波而構成（例如，在第4實施形態中之圖11(d)等）。依 此構成，在產生最終段之8倍高調波，可使用對波長 193nm之紫外線吸收係數低之LBO結晶。又，在產生基本 波之7倍高調波及10倍高調波，其亦可與產生前述基本波 之8倍高調波同樣，利用產生非線形光學結晶之2次高調 波及產生和頻率而構成。 又，在本發明之雷射裝置之形態，可藉由具有將產生 連續光之光源（例如，在實施形態中之DFB半導體雷射11 等）之光變換爲脈衝光之光調變器（例如，在實施形態中 之光調變元件12、22等），及使單一波長振盪雷射作脈衝 振盪，而可獲得紫外線脈衝光。 其次，藉由具有使用以上之構成所獲得之雷射裝置作 爲曝光裝置之光源，進而投影之圖案所形成之光罩（例如 ’在實施形態中之光罩1263)約均一之強度而照射光源之 光的照明光學系統（例如，在實施形態中之照明光學系統 1262);及用以將形成於光罩之圖案投影於晶圓上之投影 14 本紙張尺度適用中國國家標準（CNS)A4規格（21〇χ 297公釐） (請先閱讀背面之注意事項再填寫本頁》 經濟部智慧財產局員工消費合作社印製Optical Science, Vol.l, Springer-Verlag, ISBN 0-387-53756-2, p 246-249). These systems divide light from a single laser power source with a narrow spectral line width into multiple laser elements, and use the laser light as an induced wave to synchronize the oscillation wavelengths of the laser elements and narrow the spectral line width. Banded approach. However, in this method, the seed light is divided into an optical circuit of each laser element and a synchronization control unit for the oscillation wavelength, which makes the structure more complicated. In addition, although the above-mentioned array laser can make the entire cell segment smaller than the conventional excimer laser, it is quite difficult to control the output beam of the entire array to a package size of a few centimeters or less. In addition, an array laser constructed in this manner increases the cost because a wavelength conversion unit is required in each array, and a calibration offset occurs in a part of the laser elements constituting the array, or the optical element damage is caused. In this case, the adjustment of the laser element must be performed. Therefore, the entire array must be decomposed again to replace the laser element, and the array must be combined again after adjustment. The present invention is to solve the problems of the above-mentioned conventional technologies. For example, when an excimer laser is used as an ultraviolet light source of an exposure device, problems such as the enlargement of the device, the use of toxic fluorine gas, and troublesome maintenance are caused. And high cost, and in the case of high-modulation waves of solid-state lasers such as Nd: YAG lasers as the ultraviolet light source of the exposure device, the damage of non-linear optical crystals is considered, and the coherence with space increases. Spots and other problems. In addition, as the ultraviolet light source of the exposure device, when a plurality of laser elements that generate ultraviolet rays are used and the arrayed laser beams are formed in a matrix form, taking into account the structural complexity of the synchronization mechanism and the output beam ______8_ Standards are applicable to China National Standard (CNS) A4 specifications (210 x 297 mm) (Please read the unintentional items on the back before filling this page) --- I I --- Ί ^ Ji I ----- line i Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives A7: 69501 __B7_ V. Invention description (k) The problem of the difficulty of miniaturization of the path and the trouble of maintenance. That is, the first object of the present invention is to provide a single-wavelength ultraviolet light that is sufficiently narrow-banded as a light source of an exposure device, to stabilize the ultraviolet light output that is stable and has low coherence in the space, and to provide compactness and processing. Easy laser device. A second object of the present invention is to provide a compact and highly flexible exposure device using such a small and easily handled laser device as a light source. A third object of the present invention is to provide an exposure method which does not generate speckles, etc., and can perform exposure with high uniformity of illumination. A fourth object of the present invention is to provide a device manufacturing method that realizes a reduction in manufacturing cost by reducing the operating cost of an exposure apparatus and simplifying maintenance. A fifth object of the present invention is to provide a compact laser device capable of generating a narrow band region of a wavelength width. [Detailed description of the invention] The above object is achieved by a laser device, which is characterized by: a laser light generating unit that generates light of a single wavelength; and at least a section of a fiber light amplifier that amplifies the laser light generated above. And a wavelength conversion unit that converts the wavelength of the light amplified by the aforementioned optical amplifier into ultraviolet rays through non-linear optical crystallization. Specifically, 'It is oscillated by a single wavelength having a narrow band in the laser light generating part (for example,' DFB semiconductor laser 31 in the embodiment, etc. ') by a fiber optical amplifier (for example, in the embodiment The bait-doped fiber optical amplifiers 33, 34, etc.) amplify the laser light of a single wavelength, and output light from the fiber amplifier by using a non-linear optical crystal (for example, 503 to 505 in the embodiment, etc.) ) And converted to ultraviolet rays (for example, ultraviolet rays with a wavelength of 193nm or 157nm) constituted by ______9_ The Zhang scale is applicable to China National Standard (CNS) A4 (210 x 297 mm) ^ ------- ----- 《l-iil Order ..- pi —-- * Line J (Please read the precautions on the back before filling out this page) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economics B7 V. Invention Description (1 ) 'While providing a compact structure for the purpose of the present invention, a laser device that is easy to handle and generates a single wavelength of ultraviolet light. Further, in the present invention, the output of a single-wavelength laser (for example, the DFB semiconductor lasers 11, 21 and fiber lasers in the embodiment) is diverged by means of optical divergence. The optical branching means (e.g., the beam splitters 14, 16 in the embodiment) is used to divide the output into a plurality of outputs, and then a fiber is provided and the plurality of fibers are bundled to form a laser device. Also, as a means of optical divergence, it is also possible to divide the laser light generated by a single-frequency laser in parallel to diverge into a complex number. In addition, by having a delaying means that does not overlap time, mutually independent light can be obtained. The preferred method is to divide the laser light generated by the single-wavelength laser into a plurality of optical beam splitters in parallel, and at the same time, set fibers with different lengths (for example, fibers 15 and 17 in the embodiment) to The exit side of the optical beam splitter. Further, as a preferred form of fibers having different lengths from each other, after the laser beams branched in parallel are passed through the fibers, mutual delay intervals are set at a predetermined interval at the fiber output end, for example, each fiber length is set. In addition, as the optical branching means and the delaying means, a time division multiplexer (TDM, for example, TDM23 in this embodiment) is used to distribute the light of each optical path at each predetermined time, which is also the form of the present invention. . Secondly, as the plurality of fibers provided on the output side of the optical branching means, it is preferable to have a plurality of fiber optical amplifiers (for example, the bait-doped fiber optical amplifier and mirror-doped fiber optical amplifier in the embodiment). 18, 19, etc.) The amplifier of the second stage, and the second fiber optic amplifier of the second stage is preferably __10_____ The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read first Note on the back, please fill in this page again) "-I! Line_ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, 5 95 0} A; Fill out the page again for the matter} It is composed of large-mode fiber. According to this, laser light with higher light intensity can be further obtained. It is better to bundle a plurality of fiber optical amplifiers amplified by the fiber optical amplifier. The output ends of the plurality of fiber optical amplifiers (for example, the fiber output ends 114, 29, etc. in the embodiment) can be appropriately combined with non-doped fibers according to the needs. The fiber output end portion is preferably Will face the output end The core diameter of the fiber is tapered and gradually enlarged (for example, the core portion 421 of the figure in the embodiment). It is also preferable to provide a window member (for example, to implement The structure of the window members (433, 443, etc.) in the form. According to this structure, the power density (light intensity per unit area) of the laser light on the fiber output end face can be reduced, and therefore, damage to the fiber output end can be suppressed. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In the present invention, the plurality of fibers provided on the incident side of the wavelength conversion section, preferably, the output end of the fiber cooperates with the wavelength conversion section to form a bundle. Or a bundle of complex beams, or a complex output group (for example, the beam outputs 114, 29, 501, 601, 701, etc. in the embodiment). In addition, in the wavelength conversion section, one set or a complex array is used. Non-linear optical crystals (for example, 502 to 504 and 842 to 844 in the fourth embodiment) generate high-frequency fundamental waves and output ultraviolet rays (for example, ultraviolet rays with wavelengths of 193 nm and 157 nm). Since the wavelength can be changed by It is a small and economical structure with one unit, and the load of each group is reduced by using a wavelength conversion unit as a complex array. Therefore, the overall high output can be achieved. In addition, plural fiber optical amplifiers are used. When constructing the optical amplifier, in order to suppress the ultraviolet transmission caused by the dispersion of the amplification ratio of each fiber optical amplifier, the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). The employee ’s intellectual property bureau consumes Printed by the cooperative> 95 0} A7 ______B7 V. Description of the invention (q) Dispersion 'preferably is a fiber output control means for monitoring the output light from each fiber and controlling the intensity of the excitation of each fiber light amplifier (For example, the fiber output control means 405 and 406 in the embodiment). In addition, in order to make the wavelength of the light output from the ultraviolet light constant to a specific wavelength, it is preferable to use a frequency of a fundamental wave or a high-frequency wave in the wavelength conversion section and set a single-wavelength laser oscillating wavelength control means (for example, in the embodiment Wavelength control device 1274, etc.). A condensing optical element is provided on the incident side of the wavelength conversion section. The use form of the condensing optical element can be determined according to the output condition of the optical amplifier, for example, 'a condensing optical element is provided at each fiber output (for example, the lenses 902 and 453 in the embodiment), and Applicable use forms such as a concentrating chemical element (for example, lenses 845, 855, 463, and the like in the embodiment) are provided for each output group in a bundle. However, as a structure for outputting ultraviolet rays, for example, a laser light having a wavelength of about L5 / zm is emitted as a laser light generating portion, and a fiber amplifier having a basic wavelength of about 1.5 / zm as a fiber amplifier is used as a light amplifier. The optical amplifier of the amplifier is provided with at least one stage, and is configured by a wavelength conversion unit that generates 8-times high-frequency modulation of the amplified fundamental wave. With this configuration, ultraviolet rays having an output wavelength of about 190 nm can be generated. In addition, by setting the oscillation wavelength of the laser light generating section in more detail (for example, 1.544 to 1.522 Am), the output light can be set to the same wavelength of 193 nm for an ArF excimer laser. In addition, another structure for outputting ultraviolet rays is, for example, the same as described above. As a laser light generating section, laser light having a wavelength of about 1-5 / zm is emitted. As an optical amplifier, it has a wavelength of about 1.5 // m. The basic wave increase 12 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) < Please read the precautions on the back before filling this page) ---------- ---— 1 1 ^ .- 95 0 1 Printed by A7 B7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () Optical fiber amplifiers with at least one optical amplifier have at least one segment, and the generated amplifier is amplified. The fundamental wavelength is 10 times higher than that of the high-frequency wavelength conversion unit. According to this structure, it can generate ultraviolet rays with an output wavelength of about 150 nm. The output light can be set to the same wavelength as the laser by 157 nm by specifying the oscillation wavelength of the laser light generating section in more detail (for example, 1.57 to 1.58 # m). In addition, another structure for outputting ultraviolet rays is composed of, for example, a laser light generating unit that emits laser light having a wavelength of about l.lvm. As an optical amplifier, it has a fiber that amplifies a basic wave having a wavelength of about ll ^ m. The optical amplifier is composed of at least one optical amplifier and a wavelength conversion unit that generates a 7-times high-frequency modulation of the fundamental wave of the amplified iff. With this structure, ultraviolet rays having an output wavelength of about 150 nm can be generated. The output light is defined in more detail by the oscillation wavelength generated by the laser light (for example, 1.099 to 1.06 / m), and the same wavelength as the F2 laser can be set to 157 nm. In addition, another structure for outputting ultraviolet rays is composed of a laser light generating unit having a semiconductor laser or fiber laser with a vibrational wavelength of about 990 nm: at least a fiber amplifier having a fundamental wave amplification of a wavelength of about 990 nm A 1-stage optical amplifier; and a wavelength conversion unit that performs 4 times the high-frequency modulation of the amplified fundamental wave. With this configuration, ultraviolet rays having a wavelength of 248 nm, which is the same as the KrF excimer laser, can be obtained. In this way, the structure of the wavelength conversion section that generates high-frequency waves can be obtained as described in detail in the embodiment. For example, regarding a wavelength conversion unit that generates 8 times higher fundamental waves as the fundamental wave, the configuration example is simply that it can generate 2 times high harmonic waves (SHG) by using non-linear optical crystallization in all wavelength conversion sections as a basic Wave—2 times high-frequency wave—4 times high-frequency wave—g times 13 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) {Please read the precautions on the back before filling this page)-- —1 1— ϊ II «— ^ — — — — — 1— —for III--H--tfl · f · η-K n-—JI _ _ n _ _ 1 ^ 5 0 1 A7 B7 V. Invention Explanation (丨 丨) The generation of a high-frequency wave is a three-segment high-frequency wave optical path system (for example, FIG. 11 (a) in the fourth embodiment). This structure can obtain the desired δ-fold high-frequency wave with the minimum number of components. Another 'better configuration for obtaining 8 times higher harmonics is used in the wavelength conversion section with the generation and frequency (SFG) of non-linear optical crystals' to generate 3 times higher harmonics and 4 times higher harmonics of the fundamental wave. It is generated by generating a sum frequency of 7 times the high-frequency wave of the fundamental wave, and further generating a frequency of the 7-fold high-frequency wave and the fundamental wave to generate an 8-time high-frequency wave (for example, in the fourth implementation Fig. 11 (d) etc. in the form). With this configuration, an LBO crystal with a low absorption coefficient of ultraviolet light having a wavelength of 193 nm can be used to generate 8 times the high-frequency wave in the final stage. In addition, the 7-times and 10-times high-frequency waves that generate the fundamental wave can also be constructed by generating the 2nd-time high-frequency waves and the generation frequency of the non-linear optical crystal in the same manner as the 8-times high-frequency wave. In the form of the laser device of the present invention, a light modulator (for example, a light modulator that converts light from a light source that generates continuous light (for example, DFB semiconductor laser 11 in the embodiment) into pulsed light (for example, In the embodiment, the light modulating elements 12, 22, etc.) and the single-wavelength oscillating laser are pulsed to obtain ultraviolet pulsed light. Secondly, by using the laser device obtained by using the above structure as the light source of the exposure device, and a mask (for example, the “mask 1263 in the embodiment”) formed by the projected pattern, the light source is irradiated with approximately uniform intensity. Light illuminating optical system (for example, the illuminating optical system 1262 in the embodiment); and a projection for projecting a pattern formed on a photomask onto a wafer 14 This paper standard is applicable to the Chinese National Standard (CNS) A4 specification ( 21〇χ 297 mm) (Please read the notes on the back before filling out this page "

I 1> ϋ —1 I n I I B n ϋ 1. L* t— ϋ 1 - - K - - I - -- I n I 經濟部智慧財產局員工消費合作社印製 95 0 1 A7 ___B7 五、發明說明（Ό 對物光學系統（例如，在實施形態中之投影光學系統1265 )，而可獲得易於維修之曝光裝置。 又，將藉由前述複數之纖維光增幅器所增幅之纖維輸 出的一部份加以分割（例如，在實施形態中之纖維束輸出 850)，並與曝光裝置的照明光學系統連接之第1纖維傳送 系統（例如，在實施形態中之連接用纖維1273)及與其相 異之第2傳送系統（例如，在實施形態中之連接用纖維 1278 )連接，檢出形成於光罩上之校準標記及晶圓台上之 基準標記等之校準系統（例如，在實施形態中之校準系統 1280 ' 1281)，其構成係使用本發明之雷射裝置之曝光裝 置較佳之實施形態。 如上所述，依本發明之雷射光源，藉由將來自雷射光 產生部之單一波長之光，以光增幅器加以增幅，並將該被 增幅之光’藉由在波長變換部之非線形光學結晶而變換爲 紫外線之構成，其不需使用複雜之構成，即可輕易獲得所 欲光譜線寬（例如lpm以下）之紫外線。 更進一步，藉由將單一波長之雷射光分割（或時分割 )爲複數，該輸出光以複數之纖維光增幅器加以增幅，該 被增幅之光以非線形光學結晶變換爲紫外線之構成，因此 ’可提供連續的抑制脈衝光之每一脈衝之最高電力，增加 作爲光源全體之雷射光輸出，及空間的相干性較低之紫外 線。 又’藉由使用本發明之雷射光源作爲曝光裝置用之光 源’可使曝光裝置小型化，使在無塵室內之專有面積縮小 15 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） {請先閱讀背面之注意事項再填寫本頁) ------— -線 I， 經濟部智慧財產局員工消費合作社印製 A7 B7___ 五、發明說明（Λ ) ’同時，亦可降低曝光裝置之運轉成本、維修作業簡化、 縮短工時及降低費用。 更進一步，藉由以本發明之雷射光源所產生之紫外線 照明光罩，並透過光罩以紫外線曝光感光基板，使其在光 罩及感光基板上不致產生小斑點，而可以高照明度均一性 進行曝光，以及縮短維修時間，因此，可提升生產性。 又，藉由使用本發明之曝光裝置及曝光方法，將元件 圖案轉印於工件上，可實現降低光刻工程中之製造成本。 〔圖面之簡單說明〕 〔圖1〕表示依本發明之紫外線雷射裝置之第1實施形態 ，雷射光產生部及光增幅器之構成圖。 〔圖2〕表示依本發明之紫外線雷射裝置之第2實施形態 ，雷射光產生部及光增幅器之構成圖。 〔圖3〕表示依本發明之紫外線雷射裝置之第3實施形態 ，雷射光產生部及光增幅器之構成圖。 〔圖4〕表示依本發明之紫外線雷射裝置之另一實施形態 ，光增幅器之構成圖。 〔圖5〕係雙包層纖維光增幅器之截面圖。 〔圖6〕表示依在餌摻雜纖維光增幅器摻雜之元素，波長 與增益關係之特性圖。 〔圖7〕表示在將餌及鏡一起摻雜之纖維光增幅器’相對 於激起強度之增益變化之特性圖。 〔圖8〕表示本發明之紫外線雷射裝置之纖維輸出控制手 段之構成圖。 16 《請先閱讀背面之注意事項再填寫本頁) --------Γ 訂--ΓΙ —-----線 -I I —1 1 1· I ϋ ^ n ϋ ϋ ϋ I I I - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 4 6 9 5 0 ) 五、發明說明（#) 〔圖9〕表示例如在纖維光增幅器之輸出端部之纖維芯放 大側面圖。 (請先閱讀背面之注意事項再填寫本頁) 〔圖10〕表示纖維光增幅器之輸出端部之一例之側面圖。 〔圖11〕表示依本發明之紫外線雷射裝置之第4實施形態 ，波長變換部之構成圖。 .〔圖12〕表示本發明之波長變換部之變換效率表。 〔圖13〕表示依本發明之紫外線雷射裝置之第5實施形態 ，波長變換部之構成圖。 〔圖14〕表示依本發明之紫外線雷射裝置之第6實施形態 ，波長變換部之構成圖。 〔圖15〕表示依本發明之紫外線雷射裝置之第7實施形態 ，波長變換部之構成圖。 〔圖16〕表示依本發明之紫外線雷射裝置之第8實施形態 ，波長變換部輸入部之實施例之圖。 〔圖17〕表示本發明之紫外線雷射裝置之波長變換部輸入 部之另一實施例之圖。 〔圖18〕表示本發明之紫外線雷射裝置之波長變換部輸入 部之另一實施例之圖。 經濟部智慧財產局員工消費合作社印製 〔圖19〕表示本發明之曝光裝置之構成圖。 〔圖20〕表示本發明之曝光裝置之另一構成圖》 〔發明之較佳實施形態〕 以下’參照圖面以說明本發明之較佳實施形態。首先 ’參照圖1以說明本發明之雷射裝置之第1實施彤態。本 實施形態之紫外線雷射裝置，其係由具有單一波長振盪雷 17 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐） 4 6 9 5 0 1 A7 B7 五、發明說明（<) 射11以產生單一波長之雷射光之雷射光產生部；具有纖維 光增幅器13、18而將雷射光增幅之光增幅器；將雷射光並 聯分歧爲複數之光分歧裝置14、16;彼此長度相異之纖維 15、17 ;由後述之非線形光學結晶所形成，並將前述被增 幅之雷射光作波長變換之波長變換部所構成，並提供與 ArF準分子雷射相同輸出波長（193nm)或與F2雷射相同輸 出波長（157nm)，及空間的相干性低的雷射裝置。 在本實施形態，圖1係表示由本發明之雷射裝置之雷 射光產生部所輸出之單一波長的雷射光，至被分歧、增幅 爲止之構成圖。首先，依圖1而說明，將產生單一波長的 雷射光之單一波長振盪雷射11設於雷射光產生部。進而， 設置作爲光分歧裝置之分束器14、16,及長度相異之纖維 15、17，同時，在纖維17之射出側串聯連接2組纖維光增 幅器18、19。依此，由單一波長振盪雷射11所產生之雷 射光，形成被分歧爲複數並聯且分別被增幅。 又，該纖維光增幅器19之射出端形成束狀，如圖 11(a)所示，該被增幅之雷射光係射入波長變換部502〜506 。圖1中所示之纖維光增幅器19之維纖束射出端114係分 別對應於圖11(a)〜(d)所示之纖維束射出端501。該波長變 換部具有非線形光學結晶502〜504等，並將由纖維光增幅 器19所射出之基本波變換爲紫外線。又，關於本發明之波 長變換部，於後述之第4〜7實施形態作詳細說明。 以下，詳細說明本發明之實施形態。如圖1所示，作 爲以單一波長振盪之單一波長振盪雷射11，使用例如振盪 本紙張尺度適用令國國家標準（CNS)A4規格（210 X 297公笼） <請先閱讀背面之注意事項再填寫本頁) 訂---------線 經濟部智慧財產局員工消費合作社印製 469501 π ____B7___ 五、發明說明（ft〇 波長1.54 vrn，連續波輸出（以下稱爲cw輸出）20mW之 InGaAsP ’ DFB半導體雷射。此處，DFB半導體雷射，由於 其係取代縱型選擇性低之法布里-佩洛(Fabry_Peroi)型諧振 器’將回折格子設於半導體雷射內所構成者，因此，不論 在任何情況下’均可進行單一縱模式振盪，稱爲分配回授 型(Distributed Feedback:DFB)雷射。由於在該雷射係基本上 進行單一縱橫式振盪’因此可將該振盪光譜線寬抑制在 0.01pm 以下。 又’用以將雷射裝置之輸出波長固定爲特定波長，較 佳係設置振盪波控制裝置，將單一波長振盪雷射11(主 振盪器）之振盪波長控制爲一定波長。反之，較佳係以該 振盪波長控制裝置積極地變化單一波長振盪雷射之振盪波 長’而可調整該輸出波長。例如，在將本發明之雷射裝置 應用於曝光裝置之場合，若依前者，可防止因波長變動所 產生投影光學系統之收差及變動，而不致造成在圖案轉印 中之像特性（像質等之光學的特性）變化。 經濟部智慧財產局員工消費合作社印5衣 (請先閱讀背面之注意事項再填寫本頁) 又，若依後者，在曝光裝置之組合、調整之製造現場 與曝光裝置之設置場所（納入處）之標高差、氣壓差，進 而，因環境（無塵室內之氣氛）差異所產生之投影光學系 統之結像特性（收差等）的變動，可互相抵銷，因此，可 縮短在納入處曝光裝置之起動所需時間。進而，若依後者 ，在曝光裝置之運轉中，因曝光用照明之照射及大氣壓變 化等所產生之投影光學系統之收差、投影倍率及焦點位置 等之變動亦可互相抵銷，因此，可以最佳之結像狀態將圖 19 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公* ) A7 B7 469501 五、發明說明（/1) 案像轉印基板上。 作爲該振盪波長控制手段，例如，作爲單一波長振盪 雷射，使用DFB半導體雷射之場合，可藉由進行DFB半導 體雷射之溫度控制來達成，依此方法，可使振盪波長更安 定化，控制一定之波長，或微調整輸出波長。 —般而言，將DFB半導體雷射等設於加熱槽之上，並 將這些收納於框體內。在本例，使用附設於單一波長振盪 雷射11 (DFB半導體雷射等）之加熱槽所設置之溫度調整 器（例如，珀耳帖元件(Peltier)等），控制其溫度，調整振 盪波長。又，在DFB半導體雷射等，可將其溫度控制在 o.oorc。 又，DFB半導體雷射之振盪波長具有〇.lmn/°C程度之 溫度依存性。例如，由於若使DFB半導體雷射之溫度性1 °C變化，則形成在基本波（1544nm)其波長爲CUnm變化 ，在8倍波（193nm)其波長爲0.0125nm變化，在10倍波 (157nm)其波長爲O.Olnm變化。又，在曝光裝置，使曝 光用照明光（脈衝光）長度，對其中心波長作±20pm程度 之變化即可。因此，可使DFB半導體雷射11之溫度，在8 倍波時作±1.6°C程度、在10倍波時作±2°C程度之變化。 其次，在使該振盪波長控制爲所定之波長時，作爲回 授控制之監視波長，其係在DFB半導體雷射之振盪波長或 後述之波長變換部輸出（2倍波、3倍波、4倍波等）之中 ，於進行所欲之波長控制時，給與必要之感度及選擇最易 監視之波長。例如，作爲單一波長振盪雷射11，在使用振 20 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印制衣I 1 > ϋ —1 I n IIB n ϋ 1. L * t— ϋ 1--K--I--I n I Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 95 0 1 A7 ___B7 V. Description of the invention (Ό Opposite optical system (for example, the projection optical system 1265 in the embodiment), and an easy-to-maintain exposure device can be obtained. In addition, a part of the fiber output amplified by the aforementioned plural fiber optical amplifiers can be obtained. The first fiber conveying system (for example, the fiber 1273 for connection in the embodiment) which is divided into (for example, the fiber bundle output 850 in the embodiment) and connected to the illumination optical system of the exposure device, and its 2 A transfer system (for example, the connection fiber 1278 in the embodiment) is connected, and a calibration system (for example, the calibration system in the embodiment) is detected, such as a calibration mark formed on a photomask and a reference mark on a wafer stage. 1280 '1281), which is a preferred embodiment of an exposure device using the laser device of the present invention. As described above, according to the laser light source of the present invention, a single-wavelength light from a laser light generating section is used to Light The amplifier is used to increase the amplitude, and the amplified light is converted into ultraviolet light by a non-linear optical crystal in the wavelength conversion section. It can easily obtain a desired spectral line width without using a complicated structure (for example, lpm Below). Furthermore, by dividing (or time-dividing) laser light of a single wavelength into a plurality of numbers, the output light is amplified by a plurality of fiber optical amplifiers, and the amplified light is converted into ultraviolet rays by a non-linear optical crystal. Therefore, it can provide continuous maximum power for each pulse of the pulsed light, increase the laser light output as a whole light source, and ultraviolet rays with low spatial coherence. Also, by using the laser light source of the present invention As a light source for the exposure device, the exposure device can be miniaturized and the exclusive area in the clean room can be reduced by 15 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) {Please read the back Please fill in this page again for attention) ---------Line I, printed by A7 B7___, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs ) ’At the same time, it can also reduce the operating cost of the exposure device, simplify maintenance operations, shorten man-hours, and reduce costs. Furthermore, by using the ultraviolet illumination mask generated by the laser light source of the present invention, and exposing the photosensitive substrate with ultraviolet rays through the mask, it will not cause small spots on the mask and the photosensitive substrate, and can achieve high uniformity of illumination. It can improve the productivity by reducing the exposure time and maintenance time. In addition, by using the exposure device and the exposure method of the present invention, the element pattern is transferred to the workpiece, and the manufacturing cost in the photolithography process can be reduced. [Brief Description of Drawings] [Figure 1] shows the structure of the laser light generating unit and the optical amplifier according to the first embodiment of the ultraviolet laser device according to the present invention. [Fig. 2] A diagram showing the configuration of a laser light generating section and a light amplifier according to the second embodiment of the ultraviolet laser device of the present invention. [Fig. 3] Fig. 3 is a structural diagram showing a laser light generating unit and a light amplifier according to the third embodiment of the ultraviolet laser device according to the present invention. [Fig. 4] Fig. 4 is a structural diagram of an optical amplifier according to another embodiment of the ultraviolet laser device of the present invention. [Fig. 5] A sectional view of a double-clad fiber optical amplifier. [Fig. 6] A characteristic diagram showing the relationship between wavelength and gain of elements doped with bait-doped fiber optical amplifiers. [Fig. 7] A characteristic diagram showing a change in gain of a fiber optical amplifier 'doped with a bait and a mirror with respect to the excitation intensity. [Fig. 8] Fig. 8 is a structural diagram showing a fiber output control means of the ultraviolet laser device of the present invention. 16 《Please read the notes on the back before filling this page） -------- Γ Order --ΓΙ —----- Line-II —1 1 1 · I ϋ ^ n ϋ ϋ ϋ III- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 4 6 9 5 0) 5. Description of the invention (#) [Fig. 9] indicates, for example, the fiber at the output end of the fiber optical amplifier Core enlarged side view. (Please read the precautions on the back before filling this page) [Fig. 10] A side view showing an example of the output end of a fiber amplifier. [Fig. 11] Fig. 11 is a configuration diagram of a wavelength conversion unit according to a fourth embodiment of the ultraviolet laser device of the present invention. [Fig. 12] A conversion efficiency table of the wavelength conversion section of the present invention. [Fig. 13] Fig. 13 is a configuration diagram of a wavelength conversion unit according to a fifth embodiment of the ultraviolet laser device of the present invention. [Fig. 14] Fig. 14 is a configuration diagram of a wavelength conversion unit according to a sixth embodiment of the ultraviolet laser device of the present invention. [Fig. 15] Fig. 15 is a configuration diagram of a wavelength conversion unit according to a seventh embodiment of the ultraviolet laser device of the present invention. [FIG. 16] A diagram showing an example of an input section of a wavelength conversion section according to the eighth embodiment of the ultraviolet laser device according to the present invention. [Fig. 17] A view showing another embodiment of the input section of the wavelength conversion section of the ultraviolet laser device of the present invention. [Fig. 18] A diagram showing another embodiment of the input section of the wavelength conversion section of the ultraviolet laser device of the present invention. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs [Fig. 19] shows the structure of the exposure device of the present invention. [Fig. 20] A diagram showing another configuration of the exposure apparatus of the present invention. [Preferred Embodiment of the Invention] Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. First, referring to Fig. 1, a first embodiment of a laser device according to the present invention will be described. The ultraviolet laser device of this embodiment is composed of a single-wavelength oscillating laser. The paper size is applicable to the Chinese National Standard (CNS) A4 specification < 210 X 297 mm. 4 6 9 5 0 1 A7 B7 (≪) A laser light generating unit that emits 11 to generate laser light of a single wavelength; a light amplifier having fiber optical amplifiers 13 and 18 to amplify the laser light; a light branching device for branching laser light in parallel into a plurality of light branching devices 14, 16; Fibers 15 and 17 having different lengths from each other; formed by a non-linear optical crystal described later, and a wavelength conversion section that converts the amplified laser light into a wavelength, and provides the same output wavelength as an ArF excimer laser (193nm) or laser device with the same output wavelength (157nm) as F2 laser and low spatial coherence. In this embodiment, Fig. 1 is a structural diagram showing laser light of a single wavelength output by the laser light generating portion of the laser device of the present invention until it is diverged and amplified. First, the single-wavelength oscillating laser 11 that generates laser light of a single wavelength will be described with reference to Fig. 1 in the laser-light generating section. Further, beam splitters 14, 16 as optical branching means, and fibers 15, 17 having different lengths are provided, and two groups of fiber optical amplifiers 18, 19 are connected in series on the exit side of the fiber 17. Accordingly, the laser light generated by the single-wavelength oscillating laser 11 is divided into a plurality of parallel lines and is respectively amplified. In addition, the exit end of the fiber optical amplifier 19 is formed into a beam shape. As shown in FIG. 11 (a), the amplified laser light is incident on the wavelength conversion sections 502 to 506. The fiber bundle emitting ends 114 of the fiber optical amplifier 19 shown in Fig. 1 correspond to the fiber bundle emitting ends 501 shown in Figs. 11 (a) to (d), respectively. This wavelength conversion unit includes non-linear optical crystals 502 to 504, etc., and converts the fundamental wave emitted by the fiber optical amplifier 19 into ultraviolet rays. The wavelength conversion section of the present invention will be described in detail in the fourth to seventh embodiments described later. Hereinafter, embodiments of the present invention will be described in detail. As shown in Figure 1, as a single-wavelength oscillating laser 11 that oscillates at a single wavelength, for example, the size of this paper is oscillated according to the national standard (CNS) A4 specification (210 X 297 male cage) < Please read the notes on the back first Please fill in this page for more details) Order --------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 469501 π ____B7___ V. Description of the invention (fto wavelength 1.54 vrn, continuous wave output (hereinafter referred to as cw output ) 20mW InGaAsP 'DFB semiconductor laser. Here, the DFB semiconductor laser, because it replaces the Fabry-Peroi (Fabry_Peroi) type resonator with low vertical selectivity, sets the folded grid in the semiconductor laser. Therefore, in any case, 'a single longitudinal mode oscillation can be performed, which is called a distributed feedback (DFB) laser. Because this laser system basically performs a single vertical and horizontal oscillation', This oscillation spectral line width can be suppressed below 0.01pm. It is also used to fix the output wavelength of the laser device to a specific wavelength, and it is preferable to set an oscillation wave control device to oscillate a single wavelength laser 11 (main The oscillation wavelength of the oscillator is controlled to a certain wavelength. On the contrary, the output wavelength can be adjusted with the oscillation wavelength control device actively changing the oscillation wavelength of a single-wavelength oscillation laser. For example, the laser of the present invention can be adjusted. When the device is applied to an exposure device, if the former is used, it is possible to prevent the difference and variation of the projection optical system caused by the wavelength variation without causing changes in the image characteristics (optical characteristics such as image quality) during pattern transfer. Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed 5 clothes (please read the precautions on the back before filling out this page). If the latter, in the combination of the exposure device, the manufacturing site of the exposure device and the place where the exposure device is installed (included) The difference in elevation, pressure difference, and changes in the image characteristics (differences, etc.) of the projection optical system due to differences in the environment (atmosphere in a clean room) can be offset each other, so the exposure at the inclusion can be shortened The time required for the device to start up. In addition, according to the latter, during the operation of the exposure device, the exposure lighting and the atmospheric pressure change, etc. The variation of the projection optical system, the projection magnification, and the focus position can also offset each other. Therefore, the best image state can be achieved. Figure 19 This paper size applies the Chinese National Standard (CNS) A4 specification (210x 297) (Public *) A7 B7 469501 V. Description of the invention (/ 1) On the image transfer substrate. As a means for controlling the oscillation wavelength, for example, as a single-wavelength laser and a DFB semiconductor laser is used, DFB can be performed by This is achieved by controlling the temperature of the semiconductor laser. According to this method, the oscillation wavelength can be more stable, a certain wavelength can be controlled, or the output wavelength can be adjusted slightly. Generally speaking, a DFB semiconductor laser is placed on a heating tank, These are stored in a frame. In this example, a temperature adjuster (for example, a Peltier element, etc.) provided in a heating tank attached to a single-wavelength oscillation laser 11 (DFB semiconductor laser, etc.) is used to control its temperature and adjust the oscillation wavelength. In DFB semiconductor lasers, the temperature can be controlled at o.oorc. In addition, the oscillation wavelength of the DFB semiconductor laser has a temperature dependency of about 0.1 mn / ° C. For example, if the temperature of DFB semiconductor laser is changed by 1 ° C, it will form a fundamental wave (1544nm) with a wavelength of CUnm, an 8x wave (193nm) with a wavelength of 0.0125nm and a 10x wave ( 157 nm) whose wavelength is changed to 0.01 nm. In the exposure apparatus, the length of the exposure illumination light (pulse light) may be changed by about 20 pm from its center wavelength. Therefore, the temperature of the DFB semiconductor laser 11 can be changed by about 1.6 ° C at 8 times and about 2 ° C at 10 times. Next, when the oscillation wavelength is controlled to a predetermined wavelength, it is output as a monitoring wavelength for feedback control at the oscillation wavelength of a DFB semiconductor laser or a wavelength conversion section (2 times, 3 times, 4 times) described later. (Waves, etc.), when performing the desired wavelength control, give the necessary sensitivity and select the wavelength that is most easily monitored. For example, as a single-wavelength oscillating laser 11 and a 20-vibration paper, the Chinese national standard (CNS) A4 specification (210 X 297 mm) is applicable (please read the precautions on the back before filling this page) Intellectual Property of the Ministry of Economic Affairs Bureau Consumer Printing Cooperative Printed Clothes

^eJ* 1% H ϋ 1· I ϋ I — 糾 0 I I —r* 1 n L I n IK I n n V ϋ ϋ n n I 經濟部智慧財產局貝工消費合作社印製 A7 -4 b 9 S CU-21 五、發明說明（β) 盪波長1.51〜L59/zm之DFB半導體雷射之場合，振盪雷 射光之3倍波係形成503〜530nm之波長。此波長帶係相當 於碘分子之吸收線爲緊密地存在之波長領域，藉由選擇碘 分子之適當的吸收線，將3倍波之波長栓鎖於其所選擇之 吸收線（波長），而可進行精密之振盪波長控制。 在圖1中，將單一波長振盪雷射11 (DFB半導體雷射 )之光輸出，使用如電氣光學光調變元件及音響光學光調 變元件等之光調變元件12，將CW光（連續光）變換爲脈 衝光。在本例中，說明藉由光調變元件12而調變爲脈衝幅 度Ins、重覆頻率ΙΟΟΚΗζ (脈衝週期10/zs)之脈衝光之場 合。進行如此之光調變後之結果，形成由光調變元件12所 輸出之脈衝光的最大輸出爲20mW，平均輸出爲2#W。此 處，假設無因插入光調變元件12之損失，在有插入損失例 如損失爲-3dB之場合，形成脈衝光之最大輸出爲10mW， 平均輸出1 // W。 又，在作爲光調變元件而使用電氣光學調變元件場合 ，以使藉由隨曲折率的時間變化之線形調頻之半導體雷射 輸出之波長範圍變小，較佳係使用具有進行線形調頻補正 之電極構造之電氣光學調變元件（例如，二電極型調變器 )。又，藉由將重覆頻率設定爲100KHZ程度以上，在後 述之纖維光增幅器，可防止因ASE光（Amplified Spontaneous Emission:自然放出光）雜訊的影響之增幅率 低下，如此之調變器構造爲較佳。 進而，以在半導體雷射等進行其電流控制，可使輸出 21 本紙張尺度適用中®國家標準（CNS)A4現格<2]0 X 297公釐> (請先閱讀背面之注意事項再填寫本頁) 線— n n n - A7 A7 16 9 5 0 1 B7__ 五、發明說明（β ) 光作脈衝振盪。因此，在本例及後述之各實施形態，較佳 係將單一波長振盪雷射11 (DFB半導體雷射等）之電流控 制與光調變元件12倂用以產生脈衝光。此處，藉由DFB 半導體雷射11，使具有例如10〜20ns程度之脈衝幅度的脈 .衝光振盪，同時，藉由光調變元件12，僅將自該脈衝光之 一部份取出，即在本例係將脈衝幅度爲Ins之脈衝光作調 變。 依此，相較於僅使用光調變元件12之場合，更容辱產 生脈衝幅度小的脈衝光，同時，更簡單控制脈衝光之振盪 間隔及振盪的開始與停止等。特別是，在僅使用光調變元 件12，即使將脈衝光設爲OFF狀態，其消光比不充份之場 合，較佳係將其與DFB半導體雷射11之電流控制倂用》 將由此所得之脈衝光連接於初段之餌摻雜纖維光增幅 器13 (EDFA)，進行35dB (3162倍）之光增幅。此時， 脈衝光最大輸出約爲63W，平均輸出約爲6.3mW。 以作爲光分歧裝置之分束器14,首先將此作爲初級之 光增幅器的纖維光增幅器13的輸出並聯分割爲通道〇〜3 之4輸出。進而，藉由將通道〇〜3之各輸出連接於長度互 異之4支纖維15(在圖1僅表示通道〇之1支），使由各 纖維15輸出之光，給予對應於纖維長之延遲。例如，在本 實施形態，將在各纖維中之光的傳送速度設爲2X108m/s， 並將0.1m、19.3m、38.5m、57.7m長之纖維分別連接於通 道0、1、2、3。於此場合，在各纖維出口相鄰通道間的光 延遲則變爲96ns。又，在此用以將如此光進行延遲所使用 22 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） <請先閱讀背面之注意事項再填寫本頁)^ eJ * 1% H ϋ 1 · I ϋ I — correction 0 II —r * 1 n LI n IK I nn V ϋ nn I Printed by the Shelley Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 -4 b 9 S CU- 21 V. Description of the invention (β) In the case of a DFB semiconductor laser with an oscillation wavelength of 1.51 to L59 / zm, a 3 times wave system of the oscillation laser light forms a wavelength of 503 to 530 nm. This wavelength band corresponds to the wavelength region where the absorption line of the iodine molecule exists closely. By selecting the appropriate absorption line of the iodine molecule, the wavelength of the 3x wave is locked to the selected absorption line (wavelength), and Can perform precise oscillation wavelength control. In FIG. 1, the light output of a single-wavelength oscillating laser 11 (DFB semiconductor laser) is used, and light modulation elements 12 such as electro-optical light modulation elements and acoustic optical light modulation elements are used to convert CW light (continuous Light) into pulsed light. In this example, a description will be given of the field of pulsed light modulated by the light modulation element 12 to a pulse amplitude Ins and a repeating frequency of 100KΗζ (pulse period 10 / zs). As a result of performing such light modulation, the maximum output of the pulsed light output from the light modulation element 12 is 20 mW, and the average output is 2 # W. Here, it is assumed that there is no loss due to the insertion of the light modulation element 12, and in the case where there is an insertion loss, such as a loss of -3dB, the maximum output of the pulsed light is 10mW, and the average output is 1 // W. When an electro-optic modulation element is used as the light modulation element, in order to reduce the wavelength range of the semiconductor laser output that is linearly frequency-modulated with the time of the tortuosity, it is preferable to use linear frequency modulation correction. Electro-optic modulation element with electrode structure (for example, two-electrode type modulator). In addition, by setting the repeating frequency to be above 100KHZ, the fiber optical amplifier described later can prevent the increase rate of the ASE light (Amplified Spontaneous Emission) noise from being low. Such a modulator The structure is better. Furthermore, by controlling its current in a semiconductor laser, etc., it is possible to output 21 paper sizes. Applicable National Standards (CNS) A4 now < 2] 0 X 297 mm > (Please read the precautions on the back first Fill out this page again) Line — nnn-A7 A7 16 9 5 0 1 B7__ 5. Description of the invention (β) Light oscillates in pulses. Therefore, in this example and each of the embodiments described later, it is preferable to use a current control and light modulation element 12 of a single-wavelength oscillating laser 11 (DFB semiconductor laser, etc.) to generate pulsed light. Here, the DFB semiconductor laser 11 oscillates a pulse with a pulse amplitude of, for example, about 10 to 20 ns. At the same time, only a part of the pulsed light is taken out by the light modulation element 12, That is, in this example, the pulse light whose pulse amplitude is Ins is modulated. Accordingly, compared with the case where only the light modulating element 12 is used, it is more tolerant to generate pulse light with a smaller pulse amplitude, and at the same time, it is easier to control the oscillation interval of the pulse light and the start and stop of the oscillation. In particular, in the case where only the light modulation element 12 is used, and even when the pulsed light is turned off, the extinction ratio is insufficient, it is preferable to use it with the current control of the DFB semiconductor laser 11 " The pulsed light is connected to the bait-doped fiber optical amplifier 13 (EDFA) in the first stage, and performs 35dB (3162 times) optical amplification. At this time, the maximum output of the pulsed light is about 63W, and the average output is about 6.3mW. Taking the beam splitter 14 as an optical branching device, first, the output of the fiber optical amplifier 13 which is the primary optical amplifier is divided into four outputs of channels 0 to 3 in parallel. Furthermore, by connecting each output of the channels 0 to 3 to four fibers 15 of different lengths (only one channel of the channel 0 is shown in FIG. 1), the light output from each fiber 15 is given a value corresponding to the fiber length. delay. For example, in this embodiment, the transmission speed of light in each fiber is set to 2 × 108m / s, and fibers with a length of 0.1m, 19.3m, 38.5m, and 57.7m are connected to the channels 0, 1, 2, and 3, respectively. . In this case, the optical delay between adjacent channels at each fiber exit becomes 96 ns. In addition, the paper used here to delay such light is 22 paper sizes that comply with Chinese National Standard (CNS) A4 (210x 297 mm) < Please read the notes on the back before filling this page)

訂J--- !線J 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 469501 五、發明說明（π) 之纖維，以下稱之爲延遲纖維。 其次，將4支之延遲纖維15之輸出分別導引至光分歧 裝置16 (平板導波路1X32分束器）’此4方塊之平板導 波路1X32分束器16 (在圖1 ’僅表示連接於1支之延遲 纖維15的第1方塊）更進一步分別加以並聯分割爲32輸 出（在各方塊，通道〇〜31) ’全體合計分割爲32X4=128 通道。又除了通道〇之外’各方塊（平板導波路1X32分 束器16)分別再與長度相異之延遲纖維Π (在圖1 ’僅表 示第1方塊之通道〇之延遲纖維）連接。在本實施形態， 例如，在通道1〜31分別與0.6XNm (N爲通道序號）長度 之延遲纖維連接。結果，在各方塊內相鄰之通道間給予 3ns之延遲，在各方塊對該通道〇之輸出，通道31之輸出 係給予3x31=93ns之延遽。 另一方面，如前所述，在第1〜4方塊（平板導波路1 X32分束器16)間，藉由延遲纖維15而於各方塊之輸入 時點給予96ns之延遲。因此，第2方塊之通道0的輸出對 第1方塊之通道0輸出形成96ns之延遲，而對第1方塊之 通道31的輸出則形成3ns之延遲。上述情況在第2與第3 方塊之間，及第3與第4方塊之間均相同。結果，在全體 輸出總計128個通道之輸出端，在相鄰之通道間，可獲得 具有3ns·之延遲的脈衝光。 又，在圖1僅記載有關第1方塊之通道0，其它之通 道的記載則省略，第1方塊之其它通道，及第2〜4方塊之 各通道亦是同樣構成。 23 --I-----I--1·"·-丨丨丨---Ί 訂·τ----丨！ (請先間讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） Α7 經濟部智慧財產局員工消費合作社印製 _ Β7_____ 五、發明說明（>\) 藉由以上之分歧及延遲，在總計128通道之輸出端， 於相鄰之通道間，可獲得具有3ns之延遲的脈衝光。此時 ，在各輸出端所觀測到之脈衝光，其係與藉由光調變元件 12所調變之脈衝相同之ΙΟΟΚΗζ (脈衝週期ΙΟ/is)。因此 ，就雷射光產生部全體觀之，128脈衝在產生3ns間隔之後 ，將9.62/zs之間隔放置，並進行其次之產生脈衝列（間隔 爲3ns之128脈衝）之頻率爲ΙΟΟΚΗζ。即，全體輸出變爲 128X 100X lOkl.MX 107脈衝/秒。 又，在本實施形態將分割數設爲128，並且使用作爲 延遲纖維15、17其長度較短者之例而說明之。因此，在各 脈衝列之間雖產生9.62gs之未發光間隔，但，藉由例如增 加分割板、適當地增加延遲纖維長度或將兩者組合倂用， 亦可將脈衝間隔設爲完全等間隔。例如，亦可藉由將射入 前述分束器14.之雷射光的脈衝頻率設爲f(Hz)，分割數設 爲m，各纖維之延遲間隔變爲i/(fxm)，而設定各纖維長度 來達成。 又，爲使前述之脈衝間隔形成完全之等間隔，可藉由 調整分束器14、16之至少一方之分割數或以光調變元件 12所規定之脈衝頻率f，或同時調整其分割數及頻率f。因 此’藉由調整延遲纖維15、17之各纖維長度、分束器14 、16之至少一方之分割數、及脈衝頻率f之中至少一種， 則不僅可將脈衝間隔設爲等間隔，其間隔亦可任意設定。 又，用以在將光源（雷射裝置）組合後，變更纖維長 度時’例如，事先將延遲纖維15、17分別加以成束而單元 24 <請先閱讀背面之注意事項再填寫本頁) -------I 訂_1!----線· — — ΙΕΙΓΙΙΙ· — — — . n n 本紙張尺度適用中國囤家標準（CNS)A4規格（210^ 297公釐） 95 0 1 A7 B7 五、發明說明（yV) (請先閱讀背面之注意事項再填寫本頁) 化，並將該單元可與通道間之延遲時間相異之別的延遲纖 維單元交換之構成爲較佳。又’在變更分束器14、16之分 割數時，事先準備分別與分束器14、16對應且分割數相異 之別的分束器，而可將這些分束器作交換之構成爲較佳。 此時，對應分束器Η、16之分割數之變更’而可將延遲纖 維15、17之各單元作交換之構成爲較佳。 又，在本例中，藉由控制施加於光調變元件12之驅動 用電壓脈衝之時序，則可調整光源（脈衝光）之振盪時序 ，即重複頻率f(脈衝週期）。進而’在隨著此振盪時序 之變更而使脈衝光變動之場合，施加於光調變元件12之驅 動用電壓脈衝之大小亦同時調整，以補償其輸出變動。 經濟部智慧財產局員工消費合作社印製 此時，僅藉由單一波長振盪雷射11之振盪控制，或與 前述之光調變元件12控制倂用，以補償該脈衝光之輸出變 動亦可。又，脈衝光之輸出變動不僅在該振盪時序之變更 時，其亦可在將單一波長振盪雷射11之輸出（即，對脈衝 光之纖維光增幅器之射入）僅於所定時間停止後，將該振 盪重新開始時亦可產生。又，在使單一波長振盪雷射11作 脈衝振盪之場合，可僅藉由單一波長振盪雷射11之電流控 制，或與前述之光調變元件12之控制倂用，以調整脈衝光 之振盪時序（脈衝週期）。 在本例中，纖維光增幅器18係分別連接於128支之延 遲纖維17 ’進而，挾著狹帶域濾波器113且連接纖維光增 幅器19。狹帶域濾波器113係藉由切斷分別以纖維光增幅 器13、18所產生之ASE光，並且透過DFB半導體雷射11 25 本紙張尺度適用中國囷家標準<CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印制衣 j b 9 b 0 1 A7 _ B7__ 五、發明說明（A) 之輸出波長（波長寬爲lpm程度以下），而使透過光之波 長寬實質地狹帶化。依此，可防止ASE光射入後段之纖維 光增幅器18、19而降低雷射光之增幅增益。此處，狹帶域 濾波器113，其透過波長寬較佳爲lpm程度，但，由於 ASE光之波長寬爲數拾nm程度，因此，在現時點所獲得 之透過波長寬即使使用100pm程度之狹帶域濾波器，在實 用上沒問題之程度，可將ASE光切斷。 又，在將DFB半導體雷射11之輸出波長作積極的變 化之場合，雖可對應該輸出波長而交換狹帶域濾波器113 ，但，較佳係事先使用具有對應該輸出波長之可變寬（以 在曝光裝置之一例，前述之±20pm程度）之透過波長寬之 狹帶域濾波器。又，應用於曝光裝置之雷射裝置，其波長 寬係設爲lpm程度以下。又，在圖1之雷射裝置設置3個 隔離器110、111、112，依此而減低反射光之影響》依上述 之構成，由於自雷射光產生部（纖維光增幅器19之射出端 )之輸出光係被極狹帶域化，因此不會造成彼此時間的重 疊。因此，可降低各通道輸出間之空間的相干性。 又，在上述之構成，雖已說明使用DFB半導體雷射作 爲單一波長振盪雷射11，及使用平板導波路型分束器作爲 光分歧裝置14、16之例，作爲雷射光源其係與DFB半導 體雷射同樣地，以該波長領域所狹帶域化之雷射亦可，例 如，以餌摻雜纖維雷射亦可獲得同樣效果。又，作爲光分 歧裝置其係與平板導波路分束器同樣地，將光並聯分歧者 亦可，例如，使用纖維分束器或部份透過鏡之光束分束器 26 (請先閱讀背面之注意事項再填寫本頁) -I I I I I I *4 — — —— — —· I — — Jll-t-llr *-1111111—1- 本紙張尺度適用中國國家標準<CNS)A4規格（210 X 297公釐） ；S95D1 A7 一一 _B7___ 五、發明說明（埒） 亦可獲得同樣效果。 (請先閱讀背面之注意事項再填寫本頁) 又，在前述之本實施形態，以一段或多段之EDFA ( 餌摻雜纖維光增幅器）,.將延遲纖維17之輸出作更進一步之 增幅。在本實施形態之一例說明將在雷射光產生部之各通 道的平均輸出約50//W，全部通道合計之平均輸出約 6.3mW，藉由 2 段之 EDFA 18、19 進行合計 46dB ( 40600 倍）之增幅。於此場合，在各通道之輸出端可獲得最大輸 出20kW ’脈衝幅度Ins，脈衝頻率lOOKHz，平均輸出2W 及全部通道的平均輸出約256W。 此處，雖未考慮到在平板導波路型分束器14、16之結 合損失，當有該結合損失之場合，僅該損失部份，可藉由 提升纖維光增幅器（例如，EDFA 18、19等之中至少1個 )之增幅增益，可使由EDFA 19所產生之基本波的輸出設 爲與前述之値（例如，最大輸出20kW等）相同。又，藉 由變化纖維光增幅器之增幅增益，可使基本波之輸出大於 或小於前述之値。 經濟部智慧財產局員工消費合作社印製 此光增幅器的輸出之波長1.544//m之單一波長脈衝雷 射光，藉由使用非線形光學結晶之波長變換部而將其變換 爲光譜線寬較窄之紫外線脈衝輸出。有關此波長變換部之 實施形態，於後面再加以說明。 其次，參照圖2以說明本發明之雷射裝置的第2實施 形態。依本實施形態之紫外線產生裝置，其係由產生單一 波長的雷射光之雷射光產生部；將該光增幅之光增幅器； 及將該被增幅之光作波長變換之波長變換部所構成，提供 ____27 _ 表紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 46 95 0 1 A7 B7 五、發明說明（A ) 產生與ArF準分子雷射相同之輸出波長（193nm)或與F2 雷射相同波長（157nm)之雷射光，並且空間的相千性低 的紫外線雷射裝置。又，在與本發明之第1實施形態之紫 外線雷射裝置相比較，具有：光分歧裝置係將光作時間的 分割而分歧之點；及在尙未射入此光分歧裝置之前的雷射 光係未被纖維光增幅器增幅之點，此2點係彼此相異。其 中，光分歧裝置與纖維光增幅器之先後順序，任何一種構 成皆可。 又，與前述第1實施形態（圖1)同樣地，其亦可在 光分歧裝置（在本例爲TDM 23)之射入側（單一波長振盪 雷射21側）更進一步設置纖維光增幅器而將此處所增幅之 脈衝光射入光分歧裝置之構成。依此，配置於比光分歧裝 置更後段之纖維光增幅器（在本例爲24、25)，可將必要 之增幅增益比圖2之構成降得更低，例如，由於減少纖維 光增幅器之交換次數等而變得更經濟。 圖2係表示依本發明之紫外線雷射裝置之第2實施形 態中，雷射光產生部、光分歧裝置及光增幅器的部份之構 成例=如圖2所示，依本實施形態之紫外線雷射裝置，具 有由產生單一波長的雷射光之單一波長振盪雷射21所形成 之雷射光產生部；及使光分歧之光分歧裝置23，來自光分 歧裝置23之複數之輸出光分被2組之纖維光增幅器24、25 增幅爲並聯複數。此纖維光增幅器25之射出端係形成束狀 ，如圖14所示，在由非線形光學結晶等所形成之波長變換 部（ 702〜712)射入被增幅之雷射光。 28 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） — — ——ί — — — —— — —'.· 1 I I I I 1 ΙΊ I - --I - - - - I J (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 46 95 0 1 五、發明說明（ 此處，圓2所示之纖維光增幅25之纖維束之射出端 29係對應於圖14所示之纖維束射出端701。在圖14之波 長換部具有一群之非線形光學結晶702、705、710、712， 並且將由光增幅器（21〜28)所射出之基本波變換爲紫外 線。又，有關本發明之波長變換部，於後述之第4〜7實施 形態再作詳細說明。 以下，說明本實施形態。圖2所示之作爲以單一波長 振盪之雷射21，例如，使用振盪波長l.〇9jtzm，CW輸出 20mW之DFB半導體雷射或鏡摻雜纖維雷射。這些雷射由 於基本上係單一縱模式振盪，因此可將其振盪光譜線寬控 制在0.01pm以下。 此單一波長振盪雷射21之光輸出，係使用例如電氣光 學光調變元件或音響光學光調變元件等之光調變元件22, 將CW光（連續光）變換爲脈衝光。作爲本例之一例，說 明藉由此光調變元件22，進行調變爲脈衝幅度Ins，頻率 12.8MHz (脈衝週期約78ns)之脈衝光之場合。依此光調 變之結果，由光調變元件所輸出之脈衝光的最大輸出變爲 20mW，平均輸出爲0.256mW。Order J ---! Line J Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employee Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 469501 V. The fiber of the invention (π) is hereinafter referred to as delayed fiber. Next, guide the output of the four delay fibers 15 to the optical branching device 16 (flat waveguide 1X32 beam splitter). 'The four-block flat waveguide 1X32 beam splitter 16 (shown in Figure 1 only connects to The first block of one delay fiber 15) is further divided into 32 outputs in parallel (in each block, channels 0 to 31) 'The total is divided into 32 × 4 = 128 channels. In addition to channel 0, each block (flat waveguide 1X32 beam splitter 16) is connected to a delay fiber Π with a different length (only the delay fiber of channel 0 of the first block is shown in Fig. 1). In this embodiment, for example, channels 1 to 31 are connected to delay fibers having a length of 0.6 × Nm (N is the channel number). As a result, a delay of 3 ns is given between adjacent channels in each block, and the output of channel 0 and the output of channel 31 are given a delay of 3 x 31 = 93 ns in each block. On the other hand, as described above, a delay of 96 ns is given between the first to fourth blocks (flat waveguide 1 X32 beam splitter 16) through the delay fiber 15 at the input point of each block. Therefore, the output of channel 0 of block 2 forms a delay of 96 ns to the output of channel 0 of block 1 and a delay of 3 ns to the output of channel 1 of block 1. The above situation is the same between blocks 2 and 3, and between blocks 3 and 4. As a result, at the output end of a total of 128 channels of the overall output, between adjacent channels, pulsed light with a delay of 3 ns · can be obtained. In FIG. 1, only the channel 0 of the first block is described, and the description of other channels is omitted. The other channels of the first block and the channels of the second to fourth blocks are also configured in the same manner. 23 --I ----- I--1 · " · 丨 丨 丨 --- Ί Order · τ ---- 丨! (Please read the precautions on the back before filling out this page) This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) Α7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs _ Β7 _____ V. Description of the invention (≫ \) Through the above differences and delays, at the output end of a total of 128 channels, between adjacent channels, a pulsed light with a delay of 3ns can be obtained. At this time, the pulsed light observed at each output terminal is the same 100KΗζ (pulse period 10 / is) as the pulse modulated by the light modulation element 12. Therefore, from the perspective of the laser light generating unit as a whole, the 128 pulses are placed at an interval of 9.62 / zs after generating a 3 ns interval, and the frequency of generating a pulse train (128 pulses at an interval of 3 ns) is 100 KHz. That is, the entire output becomes 128X 100X lOkl.MX 107 pulses / second. In this embodiment, the number of divisions is set to 128, and the lengths of the delay fibers 15 and 17 will be described as an example. Therefore, although an unilluminated interval of 9.62 gs is generated between each pulse train, the pulse interval can also be set to a completely equal interval by, for example, adding a dividing plate, appropriately increasing the length of a delay fiber, or using both in combination. . For example, by setting the pulse frequency of the laser light entering the beam splitter 14. to f (Hz), the number of divisions to m, and the delay interval of each fiber to i / (fxm), it is also possible to set each Fiber length to achieve. In addition, in order to make the aforementioned pulse intervals completely equal, the number of divisions of at least one of the beam splitters 14, 16 or the pulse frequency f prescribed by the optical modulation element 12, or the number of divisions thereof can be adjusted at the same time. And frequency f. Therefore, by adjusting at least one of the lengths of the respective fibers of the delay fibers 15 and 17, the number of divisions of at least one of the beam splitters 14, 16 and the pulse frequency f, not only the pulse interval can be set to an equal interval, but also the interval. Can also be set arbitrarily. Also, when combining the light source (laser device) and changing the fiber length, 'for example, the delay fibers 15 and 17 are bundled in advance and the unit 24 < please read the precautions on the back before filling this page) ------- I Order_1! ---- Line · — — ΙΕΙΓΙΙΙ · — — — nn This paper size is applicable to China Store Standard (CNS) A4 (210 ^ 297 mm) 95 0 1 A7 B7 V. Description of invention (yV) (Please read the notes on the back before filling this page), and it is better to exchange the unit with a delay fiber unit with a different delay time between channels. In addition, when changing the number of divisions of the beam splitters 14, 16, a beam splitter corresponding to the beam splitters 14, 16 and having a different number of divisions is prepared in advance, and these beam splitters can be replaced with a configuration such that Better. At this time, in accordance with the change of the number of divisions of the beam splitters Η and 16, it is preferable that the units of the delay fibers 15 and 17 can be exchanged. Also, in this example, by controlling the timing of the driving voltage pulse applied to the light modulation element 12, the oscillation timing of the light source (pulse light) can be adjusted, that is, the repetition frequency f (pulse period). Further, when the pulse light is changed in accordance with the change of the oscillation timing, the magnitude of the driving voltage pulse applied to the light modulation element 12 is also adjusted at the same time to compensate for its output variation. Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs At this time, it can be compensated for the pulsed light output variation only by the oscillation control of a single wavelength oscillation laser 11 or the control with the aforementioned light modulation element 12. In addition, the output variation of the pulsed light is not only when the oscillation timing is changed, but also when the output of the single-wavelength laser 11 (that is, the input of the pulsed fiber optical amplifier) is stopped only for a predetermined time It can also occur when the oscillation is restarted. In addition, when the single-wavelength oscillating laser 11 is used as a pulse oscillation, the current control of the single-wavelength oscillating laser 11 can be used, or it can be used in conjunction with the control of the aforementioned light modulation element 12 to adjust the oscillation of the pulsed light. Timing (pulse period). In this example, the fiber optical amplifier 18 is connected to 128 delay fibers 17 ', respectively, and further, the narrowband filter 113 is connected to the fiber optical amplifier 19. The narrow band filter 113 is used to cut off the ASE light generated by the fiber optical amplifiers 13 and 18, respectively, and pass through the DFB semiconductor laser. 11 25 This paper size applies the Chinese standard < CNS) A4 specification (210 X 297 mm) Printed clothing jb 9 b 0 1 A7 _ B7__ by the Intellectual Property Bureau of the Ministry of Economic Affairs V. The output wavelength of the invention (A) (the wavelength width is less than lpm), so that the wavelength of transmitted light is wide Substantially narrow. According to this, it is possible to prevent the ASE light from entering the fiber optical amplifiers 18 and 19 at the subsequent stage and reduce the laser light gain gain. Here, the transmission bandwidth of the narrowband filter 113 is preferably about lpm. However, since the wavelength width of the ASE light is about several nanometers, the transmission wavelength width obtained at the current point is about 100 pm. Narrowband filters can cut ASE light to the extent that they are practically okay. When the output wavelength of the DFB semiconductor laser 11 is actively changed, the narrowband filter 113 can be exchanged for the output wavelength. However, it is preferable to use a variable width corresponding to the output wavelength in advance. A narrowband filter with a wide transmission wavelength (in the example of an exposure device, which is about ± 20pm). Moreover, the laser device applied to the exposure device has a wavelength width of less than or equal to lpm. In addition, three isolators 110, 111, and 112 are provided in the laser device of FIG. 1 to reduce the influence of reflected light. According to the above-mentioned structure, the self-laser light generating section (the output end of the fiber amplifier 19) The output light is narrow-banded, so it does not overlap with each other. Therefore, the coherence of the space between the outputs of the channels can be reduced. Moreover, in the above-mentioned configuration, examples have been described in which the DFB semiconductor laser is used as the single-wavelength oscillating laser 11 and the flat-plate waveguide type beam splitter is used as the optical branching devices 14, 16 as the laser light source, which is related to the DFB. Similarly, a semiconductor laser may be a laser with a narrow band in the wavelength region. For example, a bait-doped fiber laser may obtain the same effect. In addition, as an optical branching device, it is the same as a flat waveguide splitter, and it is also possible to split light in parallel. For example, use a fiber beam splitter or a beam splitter 26 that partially transmits a mirror (please read the Please fill in this page again for attention) -IIIIII * 4 — — —— — — · I — — Jll-t-llr * -1111111—1- This paper size is applicable to Chinese National Standards < CNS) A4 (210 X 297) (%); S95D1 A7 one by one _B7___ 5. Description of the Invention (埒) The same effect can also be obtained. (Please read the precautions on the back before filling in this page.) In the previous embodiment, one or more EDFA (bait-doped fiber optical amplifiers) are used to further increase the output of the delay fiber 17. . In this example, it is explained that the average output of each channel in the laser light generating section is about 50 // W, and the average output of all the channels is about 6.3mW in total. The total is 46dB (40600 times) by the two-stage EDFA 18 and 19. ). In this case, a maximum output of 20 kW 'pulse amplitude Ins, a pulse frequency of 10 OKHz, an average output of 2 W and an average output of all channels of about 256 W can be obtained at the output end of each channel. Here, although the combined loss in the flat-plate waveguide-type beam splitter 14, 16 is not considered, when there is such a combined loss, only the loss part can be improved by increasing the fiber optical amplifier (for example, EDFA 18, At least one of the 19 types, etc.) can increase the output of the fundamental wave generated by the EDFA 19 to be the same as the aforementioned one (for example, a maximum output of 20 kW, etc.). In addition, by changing the gain of the fiber optical amplifier, the output of the fundamental wave can be made larger or smaller than the aforementioned one. The single-wavelength pulsed laser light with a wavelength of 1.544 // m is printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and converted into a narrower spectral line width by using a wavelength conversion section of a non-linear optical crystal. UV pulse output. The embodiment of this wavelength conversion section will be described later. Next, a second embodiment of the laser device according to the present invention will be described with reference to Fig. 2. The ultraviolet generating device according to this embodiment is composed of a laser light generating unit that generates laser light of a single wavelength; a light amplifier that amplifies the light; and a wavelength conversion unit that performs wavelength conversion on the amplified light. Provide ____27 _ The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 46 95 0 1 A7 B7 V. Description of the invention (A) Ultraviolet laser device with the same output wavelength (193nm) of molecular laser or laser light with the same wavelength (157nm) as F2 laser and low spatial phase. In addition, compared with the ultraviolet laser device according to the first embodiment of the present invention, the light splitting device has a point where the light is divided by time and splits; and the laser light before the light splits into the light splitting device. It is the point that is not amplified by the fiber optical amplifier. These two points are different from each other. Among them, any order of the order of the optical branching device and the fiber optical amplifier may be used. Further, similar to the first embodiment (FIG. 1), a fiber optical amplifier can be further provided on the incident side (single-wavelength laser 21 side) of the optical branching device (TDM 23 in this example). The pulsed light amplified here is incident on the optical branching device. According to this, the fiber optical amplifier (24, 25 in this example) arranged at a later stage than the optical branching device can reduce the necessary amplification gain than the structure of Fig. 2, for example, due to the reduction of the fiber optical amplifier The number of exchanges and so on becomes more economical. FIG. 2 shows a configuration example of the laser light generating section, the light branching device, and the optical amplifier in the second embodiment of the ultraviolet laser device according to the present invention. As shown in FIG. 2, the ultraviolet rays according to this embodiment The laser device includes a laser light generating portion formed by a single-wavelength oscillating laser 21 that generates laser light of a single wavelength; and a light branching device 23 for branching light, and a plurality of output light from the light branching device 23 is divided into 2 The fiber optical amplifiers 24 and 25 of the group are multiplied in parallel. The output end of the fiber optical amplifier 25 is formed into a beam shape. As shown in FIG. 14, a wavelength conversion section (702 to 712) formed by a non-linear optical crystal or the like enters the amplified laser light. 28 This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) — — — — — — — — — —. 1 IIII 1 ΙΊ I---I----IJ ( Please read the notes on the back before filling in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 46 95 0 1 V. Description of the invention (here, the exit end of the fiber bundle with a fiber light increase of 25 shown in circle 2 29 Corresponds to the fiber bundle exit end 701 shown in Fig. 14. The wavelength conversion unit in Fig. 14 has a group of non-linear optical crystals 702, 705, 710, and 712, and the fundamental wave emitted by the optical amplifier (21-28) It is converted into ultraviolet rays. The wavelength conversion unit of the present invention will be described in detail in the fourth to seventh embodiments described later. This embodiment will be described below. The laser 21 shown in FIG. 2 is oscillated at a single wavelength. For example, using DFB semiconductor lasers or mirror-doped fiber lasers with an oscillation wavelength of 1.09 jtzm and CW output of 20 mW. These lasers are basically a single longitudinal mode oscillation, so the line width of the oscillation spectrum can be controlled at 0.01 pm The following: This single-wavelength oscillation The light output of the radiation 21 is converted from CW light (continuous light) to pulsed light by using a light modulation element 22 such as an electro-optical light modulation element or an acoustic optical light modulation element. As an example of this example, the explanation is borrowed. Thus, the light modulation element 22 is used to modulate pulse light with a pulse width Ins and a frequency of 12.8 MHz (a pulse period of about 78 ns). Based on the result of the light modulation, the pulse light output by the light modulation element is The maximum output becomes 20mW and the average output is 0.256mW.

將此脈衝光輸出藉由作爲光分歧裝置之時分割光分歧 裝置 23(Time Division Multiplexer:TDM)於每一脈衝光依序 分爲通道0〜127之總計128個通道。即，將每一脈衝週期 78ns之脈衝依序分爲通道0、1、2、3……127。由此結果， 自每一通道觀之，輸出脈衝週期變爲78nsX128=10#s (脈 衝頻率ΙΟΟΚΗζ)，脈衝最大輸出20mW，平均輸出2；uW 29 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂---------線. A7 5 Q 5 0 1 B7 五、發明說明（>Ί) 之脈衝光。又，由雷射光產生部整體觀之，則爲脈衝頻率 12·8ΜΗζ ’脈衝最大輸出20mW，平均輸出〇.256mW之平均 化之脈衝光。又，由於相鄰之通道間具有78ns之延遲，因 此各通道間之脈衝光不致造成重疊。 又，在本例中，雖將由光調變元件22所輸出之脈衝光 的頻率f設爲ΙΟΟΚΗζ (脈衝週期爲lOys)，由時分割光 分歧裝置（TDM) 23之通道0〜127所輸出之脈衝光，以 光調變元件22將所定之脈衝週期（l〇yS)各分爲128等 份之時間間隔（78ns)而延遲，但，該延遲時間非爲等時 間間隔亦可，或是與前述第1實施形態同樣地，僅在脈衝 週期（10ys)之一部份，輸出來自通道〇〜127之脈衝光 。進而，亦可同時地控制施加於光調變元件22之驅動用電 壓脈衝之時序以變更前述脈衝週期（10#n)，例如，亦可 將該被變更後之週期分爲128等份之時間間隔的延遲時間 加以變化。 又，與前述之第1實施形態同樣地，在本例亦可使單 一波長振盪雷射21作脈衝振盪。進而，將時分割光分歧裝 置（TDM) 23與單一波長振盪雷射21之電流控制倂用， 或亦可進而併用光調變元件22而變更前述之脈衝週期（10 ys)。 依以上之構成，由於來自雷射光產生部之輸出光爲被 極狹帶域化之單一波長之光，因此不會造成時間上的重疊 。因此，可降低各通道輸出間之空間的相干性。 又，在以上之構成，雖已說明使用DFB半導體雷射或 30 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐） <請先閱讀背面之注意事項再填寫本頁) -·1 »1 n (· 訂--------線-- 經濟部智慧財產局員工消費合作社印*'|衣 經濟部智慧財產局員工消費合作社印制衣 A7 16 95^--—--- 五、發明說明（W) 鏡摻雜纖維雷射以作爲單一波長振盪雷射21之例’但’作 爲雷射光源，其係與DFB半導體雷射同樣地’若爲以該波 長領域而被狹帶域化之雷射，亦可獲得同樣效果。 時分割光分歧裝置23之輸出，其係藉由對應於通道〇 〜127而分別設置之一段或多段之YDFA (鏡摻雜纖維光增 幅器）所構成之纖維光增幅器24、25所增幅。此鏡摻雜纖 維光增幅器，相較於前述之餌摻雜纖維光增幅器’依半導 體雷射之激起效率爲更高且經濟。又，與前述第1實施形 態同樣地，爲達到降低反射光之影響、波長寬之狹帶域化 等之目的，在單一波長振盪雷射21與光調變元件22之間 配置隔離器26，同時，在纖維光增幅器24與25之間配置 狹帶域濾波器28及隔離器27。 在本實施形態之一例，說明在時分割光分歧裝置23之 各通道的平均輸出，全部通道之平均輸出〇.256mW， 藉由2段之YDFA 24、25，進行合計60dB ( 1000000倍） 之增幅例。於此場合，在各通道之輸出端，可獲得最大輸 出20kW，脈衝幅度Ins，脈衝頻率ΙΟΟΚΗζ，平均輸出2W ’全部通道合計之平均輸出256W。又，在圖2，於全部通 道（0〜127)之中，僅敘述連接通道〇之YDFA 24、25、 隔離器27及狹帶域濾波器28，其它通道之敘述雖加以省 略，其係與其它通道同樣之構成。 作爲此纖維光增幅器（YFDA) 25之輸出，波長1.099 /zm之單一波長脈衝雷射光，其係藉由使用非線形光學結 晶之波長變換部變換爲光譜線寬較窄的紫外線脈衝輸出。 31 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） (請先閱讀背面之注意事項再填寫本頁)This pulsed light output is divided into a total of 128 channels of channels 0 to 127 by using a time division multiplexer 23 (Time Division Multiplexer: TDM) as an optical branching device. That is, pulses of 78 ns per pulse period are sequentially divided into channels 0, 1, 2, 3, ..., 127. From this result, from the perspective of each channel, the output pulse period becomes 78nsX128 = 10 # s (pulse frequency ΙΟΟΚΗζ), the maximum pulse output is 20mW, and the average output is 2; uW 29 This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the notes on the back before filling this page) Order --------- line. A7 5 Q 5 0 1 B7 V. Pulse of the invention (> Ί) Light. The laser light generating unit as a whole shows pulsed light having a pulse frequency of 12 · 8MΗζ 'with a maximum output of 20 mW and an average output of 0.256 mW. In addition, since there is a delay of 78 ns between adjacent channels, the pulse light between the channels does not cause overlap. Also, in this example, although the frequency f of the pulsed light output from the light modulation element 22 is set to 100 κΗζ (the pulse period is 10 ys), the output from channels 0 to 127 of the time division optical branching device (TDM) 23 For pulsed light, the predetermined pulse period (10 yS) is delayed by 128 equal time intervals (78 ns) with the light modulation element 22, but the delay time may not be equal time intervals, or In the same manner as the first embodiment, the pulsed light from the channels 0 to 127 is output only in a part of the pulse period (10ys). Furthermore, the timing of the driving voltage pulses applied to the light modulation element 22 can be controlled at the same time to change the aforementioned pulse period (10 # n). For example, the changed period can be divided into 128 equal times. The interval delay time is changed. In the same manner as the first embodiment described above, a single-wavelength oscillating laser 21 can also be pulsed in this example. Furthermore, the current control of the time division optical branching device (TDM) 23 and the single-wavelength oscillating laser 21 may be used, or the light modulation element 22 may be used in combination to change the aforementioned pulse period (10 ys). According to the above structure, since the output light from the laser light generating section is a single-wavelength light with an extremely narrow band, it does not cause time overlap. Therefore, the coherence of the space between the outputs of the channels can be reduced. In the above structure, although it has been stated that the use of DFB semiconductor lasers or 30 paper sizes is applicable to the Chinese National Standard (CNS) A4 specifications < 210 X 297 mm > < Please read the precautions on the back before filling this page )-· 1 »1 n (· Order -------- Line-Printed by the Consumers 'Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs *' | Printed clothes A7 16 95 ^- ------ 5. Description of the invention (W) An example of a mirror-doped fiber laser as a single-wavelength oscillating laser 21 'But' as a laser light source, it is the same as DFB semiconductor laser ' The same effect can also be obtained with lasers that are narrowed in the wavelength domain. The output of the time-division optical branching device 23 is provided with one or more segments of YDFA (mirror doping) corresponding to the channels 0 to 127, respectively. Fiber Optical Amplifier) fiber amplifiers 24, 25. This mirror-doped fiber optical amplifier is more efficient than the above-mentioned bait-doped fiber optical amplifier 'based on the activation of semiconductor lasers. It is high and economical. In order to reduce reflection, as in the first embodiment. For the purpose of the influence of the narrow band domain of wide wavelength, etc., an isolator 26 is arranged between the single-wavelength oscillating laser 21 and the optical modulation element 22, and a narrow band domain is arranged between the fiber optical amplifiers 24 and 25. Filter 28 and isolator 27. In one example of this embodiment, the average output of each channel in the time division optical branching device 23 and the average output of all channels will be 0.256 mW, which is performed by two-stage YDFA 24 and 25. Example of a total increase of 60dB (1000000 times). In this case, at the output end of each channel, a maximum output of 20kW, a pulse amplitude of Ins, a pulse frequency of 100KΗζ, and an average output of 2W are obtained. Figure 2. Among all channels (0 to 127), only YDFA 24, 25, isolator 27, and narrowband filter 28 connected to channel 0 are described. Although the description of other channels is omitted, it is the same as other channels. As the output of this fiber optical amplifier (YFDA) 25, a single-wavelength pulsed laser light with a wavelength of 1.099 / zm is converted into a narrower spectral line width by a wavelength conversion section using a non-linear optical crystal UV pulse output. 31 paper scale applicable Chinese National Standard (CNS) A4 size (210x297 mm) (Please read the back of the precautions to fill out this page)

訂—------線J 經濟部智慧財產局員工消費合作社印製 .：^ 95 0 1 a? _____B7 _ 五、發明說明（) 有關此波長變換部之實施形態於後面再敘述。 在以上所說明之第1及第2實施形態中，光增幅器之 輸出波長雖相異，這些係如以上之說明，其係依單一波長 振盪雷射（11、21)之振盪波長而定，進而，考慮到增幅 效率之纖維光增幅器，即藉由增益波長寬（例如，在餌摻 雜纖維爲1530〜1560nm，在鏡摻雜纖維爲990〜120〇nm) 之配合而獲得。因此，在本發明之實施形態，相對於單一 波長振盪雷射，可適當選擇具有對應於振盪波長之增益波 長寬的纖維光增幅器而配合。進而，在第1實施形態，可 取代平板導波路型分束器（14、16)，而使用在第2實施 形態所使用之TDM (23)，在第2實施形態，可取代TDM (23)，而使用平板導波路型分束器。又，有關波長變換 部之實施形態後面再敘述。 又，在這些實施形態中之最後段的高最大輸出纖維光 增幅器（在圖1爲19,圖2爲25)，爲避免在纖維中之因 非線形效果所導致之增幅光的光譜寬的增加’纖維模式徑 較佳係使用以一般通道所使用爲（5〜6//m)更大，例如 ，使用20〜30μιη之大模式徑纖維光增幅器。 圖4係表示使用此大模式徑纖維光增幅器之光增幅器 的構成例。在圖4中，將點線的4角所包園部份之纖維設 爲大模式徑之光增幅器42,使用以激起上述之大模式徑的 光增幅器用摻雜纖維之半導體雷射43 ’使其與配合光增幅 器用摻雜纖維之徑的大模式徑纖維作纖維結合’將此半導 體雷射輸出使用波長分割多重化裝置45、46(WaVelength _32____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) " (ft— I ^ ^ ^ V Jf - . 言一 矣 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 4 6 9 5 0 1 B7 五、發明說明（P )Order -------- Line J Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs .: ^ 95 0 1 a? _____B7 _ V. Description of the invention () The implementation form of this wavelength conversion unit will be described later. In the first and second embodiments described above, although the output wavelengths of the optical amplifiers are different, these are as described above, and they depend on the oscillation wavelength of the single-wavelength laser (11, 21). Furthermore, a fiber optical amplifier that considers the amplification efficiency is obtained by combining a wide gain wavelength (for example, 1530 to 1560 nm in a bait-doped fiber and 990 to 1200 nm in a mirror-doped fiber). Therefore, in the embodiment of the present invention, compared with a single-wavelength laser, a fiber optical amplifier having a gain wavelength width corresponding to the oscillation wavelength can be appropriately selected for cooperation. Further, in the first embodiment, the TDM (23) used in the second embodiment can be used in place of the flat waveguide type beam splitter (14, 16), and in the second embodiment, it can be used instead of the TDM (23). Instead, a plate-guided beam splitter is used. The embodiment of the wavelength conversion unit will be described later. In addition, in the last stage of these embodiments, the high-maximum output fiber optical amplifier (19 in FIG. 1 and 25 in FIG. 2) is used to avoid the increase of the spectral width of the amplified light caused by the non-linear effect in the fiber. 'The fiber mode diameter is preferably larger (5 to 6 // m) used in general channels, for example, using a large mode diameter fiber optical amplifier of 20 to 30 μm. Fig. 4 shows a configuration example of an optical amplifier using this large-mode fiber optical amplifier. In FIG. 4, the fiber in the area covered by the four corners of the dotted line is a large-amplitude optical amplifier 42, and a semiconductor laser 43 doped with a fiber for amplifying the large-mode optical amplifier described above is used. 'Make it a fiber with a large-mode diameter fiber that matches the diameter of the doped fiber used in the optical amplifier.' This semiconductor laser output uses a wavelength division multiplexing device 45, 46 (WaVelength _32____. This paper standard applies to Chinese National Standards (CNS) A4 Specifications (210 X 297 mm) " (ft— I ^ ^ ^ V Jf-. Yan Yiji (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 4 6 9 5 0 1 B7 V. Description of the invention (P)

Division Multiplexer:WDM)，而輸出於光增幅器用摻雜纖維 ，激起摻雜纖維。 被此大模式徑纖維（光增幅器）42所增幅後之雷射光 係射入波長變換部500，並且波長變換爲紫外線雷射光》 因此傳送此大模式徑纖維且必須被增幅之雷射光（信號） 較佳係主要爲基本模式，此係在單模式纖維或模式次數低 之多模式纖維中，可藉由選擇性地激起基本模式而實現。 又，特別於圖4中，於半導體雷射43與WDM 45之間 設置光偏波結合元件44，形成可將彼此之偏光方向爲垂直 交叉之由2個半導體雷射光43所輸出之雷射光加以合成。 又，在本例中，雖以光偏波結合元件44將雷射光之偏光方 向作垂直交叉，但，在雷射光的合成效率低下可容許的場 合，該偏光方向不作垂直交叉亦可。進而，藉由設置於大 模式徑纖維光增幅器42之射入側的隔離器404以減低反射 光之影響β 又，在具有標準的模式徑之纖維光增幅器41與大模式 徑纖維光增幅器42之間，設置狹帶域濾波器403，俾除去 由纖維光增幅器42所產生之ASE光。又，激起用之半導 體雷射401係與纖維光增幅器41作纖維結合，同時，此半 導體雷射401之輸出係通過WDM 402而輸入於光增幅器用 摻雜纖維，依此而激起該摻雜纖維。 依此方法，爲了將半導體雷射43耦合於大模式徑纖維 ’因而提升對纖維之耦合效率，可有效地使用半導體雷射 輸出。又，藉由使用同一徑之大模式徑纖維，亦可有效率 33 (請先閱讀背面之注意事項再填寫本頁) 訂---------線J. 本紙張尺度適用中國國家標準（CNS)A.l規格<210 X 297公釐〉 6 95 01 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明（w) 地減輕在WDM 45、46之損失。又，將具有標準的模式徑 之前段的纖維光增幅器41與上述大模式徑之最終段的纖維 光：t曾幅器42連接，其係使用形成錐狀之模式徑增加之纖維 來進行。 進而’在最終段的纖維光增幅器（19、25)用以獲得 高輸出’亦可取代圖4之大模式徑纖維（42)，而使用纖 維包層係形成二重構造之雙包層纖維410。圖5係表示此 纖維410之截面圖之一例。在此構造，於芯部411之部份 ’慘雜給予雷射光增幅的離子，被增幅之雷射光（信號） 則傳送至該芯部內。使激起用半導體雷射耦合於捲繞芯, 第1層412。此第1層由於係多模式且截面積較大，因此 ’使高輸出之激起用半導體雷射光之傳導更容易，並且可 有效率地耦合多模式振盪之半導體雷射，及有效率地 激起用光源。在第1層之外周係形成用以形成第1層之導 波路的第2層4Π。 又’在前述之第1及第2實施形態中，作爲纖維光Ρ 幅器’其可使用石英纖維或矽酸鹽纖維，此外，亦可使用 其它之氟化物系纖維，例如，使用ZBLAN纖維。在此氟化 物系纖維，相較於石英及矽酸鹽系等，其可增加餌摻雜濃 度’依此，可縮短增幅所需之纖維長度。 此氟化物系纖維較佳係可適用於最終段的纖維光增幅 器（19、25) ’藉由縮短纖維之長度，可抑制因在脈衝光 之纖維傳送中的非線形效果所導致之波長之擴大，例如， 可獲得在曝光裝置所需之波長寬被狹帶化之光源。特別是 34 <請先閱讀背面之注意事項再填寫本頁) 言· _ 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） 4 6 9 5 0 1 A7 B7 五、發明說明（γ) ，在具有開口數較大之投影光學系統的曝光裝置，由於可 使用此狹帶化光線，而有利於例如投影光學系統之設計、 製造。 但，如前所述，在使用具有二重構造之包層的纖維光 增幅器的輸出波長爲1.51〜1.59/zm之場合，作爲摻雜之離 子，除了餌之外，較佳係同時摻雜鏡。此係可提升半導體 雷射之激起效率的效果。即，在摻雜餌及鏡兩者之場合， 藉由鏡之強吸收波長擴大爲915〜975nm附近，以WDM使 具有在此附近之波長相異之振盪波長的複數之半導體雷射 結合，在第1層耦合，而可使用該複數之半導體雷射作爲 激起光，因此，可實現較大之激起強度。進而，若使用偏 光結合元件作爲例如圖4之光結合元件44，由於能夠使偏 光方向相異之半導體雷射輸出一起結合，因此，可進而提 升2倍之激起強度。 又，有關纖維光增幅器之摻雜纖維的設計，如本發明 在事先決定好之以一定的波長動作之裝置（例如，曝光裝 置），選擇可使在所欲波長之纖維光增幅器的增益變大之 材質。例如，在爲獲得與ArF準分子雷射相同輸出波長（ 193〜194nm)之紫外線雷射裝置，在使用光增幅器用纖維 之場合，較佳係選擇所欲之波長例如以1.548 ym而可使增 益變大之材質。 但，在通訊用纖維，由於波長分割多重化通訊之故’ 在1.55em附近之數十nm波長領域，設計爲具有比較平均 之增益。此處，例如在具有餌單一摻雜之芯部的通訊用纖 35 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 0 i n n I. J.,Je n 1 -言. 線 經濟部智慧財產局員工消費合作社印製 469501 A7 ______B7^___ 五、發明說明（V]) (請先閱讀背面之沒意事項再填寫本頁) 維作爲激起介質，爲實現平均之增益特性，因此使用鋁或 磷一起摻雜於二氧化矽之方法°因此，此種纖維在1_548# m未必可使增益變大，如圖6所示。 圖6係表示橫座標爲波長，縱座標爲螢光強度，藉由 纖維之螢光強度特性的差異。圖中之A1/P二氧化矽相當於 通訊用電纜材料，相對於此，若使用圖6所示之矽酸鹽 L22，則可獲得比在1.547 #m更大之增益。又，摻雜元素 鋁係具有使1.55//m附近之最大値往長波長側移動，而磷 則具有往短波長側移動之效果。因此，爲了在1.547//m附 近使增益變大，可摻雜少量之磷於矽酸鹽L22來達成。 另一方面，例如，使用具有摻雜餌與鏡之芯部的光增 幅器用纖維（例如前述雙包層型之纖維）之場合，如圖7 所示，藉由加少量之磷於芯部，可獲得比在1.547/zm附近 更高之增益。又，在圖7表示以波長爲橫座標，每單位長 之增益爲縱座標，相對於變化激起強度，且變化反轉分布 密度時之波長，其增益之變化圖。 經濟部智慧財產局員工消費合作社印*'ίί 其次，在第1及第2實施形態之纖維光增幅器，由於 各纖維係獨立之光增幅器，各光增幅器之增益差係形成各 通道之光輸出之不一致。因此，在此種形態之雷射裝置， 如圖8所示，在各通道之纖維光增幅器（41、42)使輸出 之一部份分歧，監視光強度，使來自各纖維光增幅器之光 輸出在各增福幅段變爲一定（即使其平衡），較佳係設置 回授控制各激起用半導體雷射（401、43)之驅動電流的纖 維輸出控制裝置405、406。在圖8中，用以檢測來自纖維 36 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（妍） 光增幅器41之分歧光的纖維輸出控制裝置405，其係依該 檢測値而控制連接於纖維光增幅器41之半導體雷射401的 驅動電流，用以檢測來自大模式徑纖維光增幅器42之分歧 光的纖維輸出控制裝置406，其係依該檢測値而控制連接 於大模式徑纖維光增幅器42之半導體雷射43的驅動電流 〇 進而，如圖8所示，使來自波長變換部500之輸出光 形成所定之光輸出，較佳係設置用以監控波長變換部500 之光強度，並且分別回授控制作爲纖維光增幅器整體（41 、42)之激起用導體雷射401、43之驅動電流的纖維輸出 控制裝置407 »在圖8中，雖纖維輸出控制裝置407係分別 獨立地控制半導體雷射401、43，但，亦可依在波長變換 部500所檢測之光強度，僅控制半導體雷射401、43其中 之一。又，纖維輸出控制裝置407雖爲在波長變換部500 之途中將雷射光分歧且檢測其強度，其亦使由波長變換部 500之射出端所輸出之雷射光的一部份分歧，且檢測該強 度。又，有關圖8之與圖4相同之其它構成要素，附有相 同符號，則其說明省略。 依此構成，由於在每一增幅段各通道之纖維光增幅器 之增幅率被一定化，因此，在各纖維光增幅器間不會造成 偏差之負載，而可獲得整體均一之光強度《又，藉由監控 波長變換部500之光強度，使所要求之所定的光強度回授 至各增幅段，而可使所欲之紫外線輸出安定。 又’雖在圖8未表示，但可將纖維輸出控制裝置405 37 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁)Division Multiplexer: WDM), and the output is doped fiber for optical amplifier, which stimulates the doped fiber. The laser light amplified by the large-mode fiber (optical amplifier) 42 is incident on the wavelength conversion unit 500, and the wavelength is converted into ultraviolet laser light. Therefore, the large-mode fiber and the amplified laser light (signal that must be amplified) are transmitted. The better system is mainly the basic mode, which can be realized by selectively activating the basic mode in a single-mode fiber or a multi-mode fiber with a low number of modes. In addition, particularly in FIG. 4, a light polarization combining element 44 is provided between the semiconductor laser 43 and the WDM 45 to form laser light output from the two semiconductor laser lights 43 which can mutually cross the polarization directions perpendicularly. synthesis. In this example, although the polarization direction of the laser light is perpendicularly crossed by the optical polarization coupling element 44, the polarization direction may not be crossed vertically in a tolerable field where the synthesis efficiency of the laser light is low. Furthermore, the isolator 404 provided on the entrance side of the large-mode fiber optical amplifier 42 reduces the influence of reflected light β. Furthermore, the fiber-optic amplifier 41 and the large-mode fiber optical amplifier having a standard mode diameter are amplified. Between the amplifiers 42, a narrow-band filter 403 is provided to remove the ASE light generated by the fiber optical amplifier 42. In addition, the semiconductor laser 401 used for excitation is combined with the fiber optical amplifier 41, and the output of the semiconductor laser 401 is input to the doped fiber for optical amplifier through WDM 402, and the doping is excited accordingly. Miscellaneous fibers. According to this method, in order to couple the semiconductor laser 43 to the large-mode-diameter fiber ′ and thereby improve the coupling efficiency to the fiber, the semiconductor laser output can be effectively used. In addition, by using large-diameter fibers with the same diameter, it can also be efficient 33 (Please read the precautions on the back before filling in this page) Order --------- Line J. This paper size applies to China Standard (CNS) Al Specification < 210 X 297 mm> 6 95 01 Printed by Employee Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (w) Reduce losses in WDM 45 and 46. Further, a fiber optical amplifier 41 having a standard mode diameter front stage and the fiber mode: t moderator 42 of the final stage of the large mode diameter are connected. This is performed by using a fiber having a tapered mode diameter to increase. Furthermore, 'the fiber optical amplifier (19, 25) in the final stage is used to obtain high output' can also replace the large-mode diameter fiber (42) in Fig. 4 and use a fiber cladding system to form a double-clad double-clad fiber 410. Fig. 5 shows an example of a cross-sectional view of the fiber 410. In this structure, a portion of the core portion 411 that misleads the laser light to be amplified, and the amplified laser light (signal) is transmitted to the core. A semiconductor laser for excitation is coupled to the winding core, the first layer 412. Because this first layer is multi-mode and has a large cross-sectional area, it makes it easier to conduct semiconductor lasers with high output for excitation, and it can efficiently couple semiconductor lasers with multi-mode oscillation, light source. A second layer 4Π is formed on the periphery of the first layer to form a waveguide of the first layer. Further, in the aforementioned first and second embodiments, as the fiber optical P-amplifier, quartz fiber or silicate fiber may be used, and other fluoride-based fibers may be used, for example, ZBLAN fiber. Compared with quartz and silicate, etc., the fluoride fiber can increase the concentration of bait doping ', which can shorten the fiber length required for the increase. This fluoride-based fiber is preferably applicable to the final fiber optical amplifier (19, 25) 'By shortening the length of the fiber, it is possible to suppress the wavelength expansion caused by the non-linear effect in the fiber transmission of pulsed light For example, it is possible to obtain a light source that is narrowed in the wavelength width required for the exposure device. Especially 34 < please read the notes on the back before filling out this page) Words _ _ This paper size applies to China National Standard (CNS) A4 (210 χ 297 mm) 4 6 9 5 0 1 A7 B7 V. Invention Explanation (γ): In an exposure device having a projection optical system with a large number of openings, this narrow band light can be used, which is advantageous for the design and manufacture of a projection optical system, for example. However, as mentioned above, in the case where the output wavelength of a fiber optical amplifier using a double-structured cladding is 1.51 to 1.59 / zm, as the doping ions, in addition to the bait, it is preferable to dope at the same time. mirror. This series can improve the effect of semiconductor laser excitation efficiency. That is, in the case of both the doped bait and the mirror, the strong absorption wavelength of the mirror is enlarged to the vicinity of 915 to 975 nm, and a semiconductor laser having a plurality of oscillation wavelengths having different wavelengths in the vicinity is combined by WDM. The first layer is coupled, and a plurality of semiconductor lasers can be used as the excitation light. Therefore, a larger excitation intensity can be achieved. Furthermore, if a polarization combining element is used as the light combining element 44 of Fig. 4, for example, semiconductor laser outputs with different polarization directions can be combined together, so that the excitation intensity can be further increased by a factor of two. In addition, regarding the design of the doped fiber of the fiber optical amplifier, as in the present invention, a device (for example, an exposure device) that operates at a certain wavelength is determined in advance, and the gain of the fiber optical amplifier at a desired wavelength is selected. Bigger texture. For example, in order to obtain an ultraviolet laser device with the same output wavelength (193 to 194 nm) as that of an ArF excimer laser, when using a fiber for optical amplifiers, it is preferable to select a desired wavelength such as 1.548 ym to achieve gain. Bigger texture. However, the communication fiber is designed to have a relatively average gain in the wavelength range of several tens of nm in the vicinity of 1.55em due to the multiplexed wavelength division communication. Here, for example, in communication fibers with a single-doped core, the paper size 35 applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) (please read the precautions on the back before filling this page) 0 inn IJ, Je n 1 -Yuan. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Online Economics 469501 A7 ______ B7 ^ ___ 5. Description of the Invention (V) To stimulate the medium, in order to achieve average gain characteristics, the method of doping aluminum or phosphorus together with silicon dioxide is used. Therefore, this fiber may not increase the gain at 1_548 # m, as shown in Figure 6. Figure 6 shows the difference between the fluorescence intensity characteristics of the fiber and the abscissa as the wavelength and the ordinate as the fluorescence intensity. The A1 / P silicon dioxide in the figure is equivalent to the communication cable material. On the other hand, if you use the silicate L22 shown in Figure 6, you can obtain a greater gain than 1.547 #m. In addition, the aluminum doping element has the effect of shifting the maximum radon near 1.55 // m toward the long wavelength side, and phosphorus has the effect of moving toward the short wavelength side. Therefore, in order to increase the gain in the vicinity of 1.547 // m, a small amount of phosphorus can be added to the silicate L22 to achieve this. On the other hand, for example, when an optical amplifier fiber (for example, the aforementioned double-clad fiber) having a core portion doped with a bait and a mirror is used, as shown in FIG. 7, by adding a small amount of phosphorus to the core portion, A higher gain can be obtained than around 1.547 / zm. Fig. 7 is a graph showing the change in gain when the wavelength is used as the abscissa, the gain per unit length is used as the ordinate, and the wavelength is changed when the intensity is excited and the distribution density is inverted. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs * 'ίί Secondly, in the fiber optical amplifiers of the first and second embodiments, since each fiber is an independent optical amplifier, the gain difference of each optical amplifier is formed in each channel. Inconsistent light output. Therefore, in this type of laser device, as shown in FIG. 8, the fiber optical amplifiers (41, 42) of each channel diverge a part of the output, monitor the light intensity, and make the optical amplifiers from each fiber optical amplifier. The light output becomes constant (even if it is balanced) in each boosting range, and it is preferable to provide fiber output control devices 405 and 406 for controlling the driving current of the semiconductor lasers (401, 43) for actuation. In Figure 8, this paper is used to detect the fiber size of 36 papers, which is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A7 B7. The fiber output control device 405 for the branched light of the amplifier 41 is to control the driving current of the semiconductor laser 401 connected to the fiber optical amplifier 41 according to the detection frame, and is used to detect the light from the large-mode fiber optical amplifier 42. The fiber output control device 406 of the branched light controls the driving current of the semiconductor laser 43 connected to the large-mode fiber optical amplifier 42 according to the detection signal. Further, as shown in FIG. The output light forms a predetermined light output, and is preferably set to monitor the light intensity of the wavelength conversion section 500, and to feedback control the excitation lasers 401, 43 as the whole of the fiber optical amplifier (41, 42). Fiber output control device 407 for driving current »Although the fiber output control device 407 independently controls the semiconductor lasers 401 and 43 in FIG. 8, the fiber output control device 407 may also depend on the wavelength conversion section 50. 0 The detected light intensity controls only one of the semiconductor lasers 401, 43. In addition, although the fiber output control device 407 divides the laser light and detects its intensity during the wavelength conversion section 500, it also divides a part of the laser light output from the output end of the wavelength conversion section 500, and detects this. strength. Note that the same reference numerals are attached to the other components in FIG. 8 that are the same as those in FIG. 4 and their explanations are omitted. According to this structure, since the amplification rate of the fiber optical amplifiers of each channel in each amplification section is fixed, therefore, there is no load that causes deviation between the fiber optical amplifiers, and an overall uniform light intensity can be obtained. By monitoring the light intensity of the wavelength conversion section 500, the required predetermined light intensity is fed back to each of the amplification sections, so that the desired ultraviolet output can be stabilized. Also ’Although it is not shown in Figure 8, the fiber output control device 405 37 can be applied to the Chinese paper standard (CNS) A4 (210 X 297 mm).

T 46 9 5 0 1 B7 五、發明說明（β) 、406、407其中之一，分別連接於單一波長振盪雷射（11 或12)及光調變元件（12或22) ’以進行單一波長振盪 雷射之溫度控制及電流控制，同時’將驅動用電壓脈衝施 加於光調變元件，並且可進而控制該電壓脈衝之時序及大 小。 因此，其中至少一個纖維輸出控制裝置係檢測脈衝光 (在基本波或波長變換部至少1次被波長變換後之可視光 、紅外線或紫外線）之強度、中心波長及波長寬，並依該 檢測値回授控制單一波長振盪雷射之溫度，及控制該脈衝 光之中心波長及波長寬。進而，依該檢測値進行單一波長 振盪雷射之電流控制及施加於光調變元件之電壓脈衝的控 制，並且控制該脈衝光的強度、輸出間隔及脈衝輸出的開 始與停止等。 又，至少一個纖維輸出控制裝置係進行單一波長振盪 雷射之脈衝輸出與連續輸出之切換，及在該脈衝輸出時之 輸出間隔及脈衝幅度等之控制，同時，用以補償脈衝光之 輸出變動，而進行單一波長振盪雷射之振盪控制及光調變 元件之控制其中之一。 又，在圖8，其雖以使用大模式徑纖維光增幅器爲前 提，但，此處所說明之連接於纖維光增幅器之激起用半導 體雷射（401等）的電流控制，及單一波長振盪雷射與光 調變元件之控制，其亦可適用於不使用大模式徑纖維光增 幅器之前述第1及第2實施形態之紫外線雷射裝置（如圖 1、2) ° ____38_____ 紙張尺度適用中國國家標準(CNS)A4規格（210x 297公釐) "" ' (請先閱讀背面之注i項再填寫本頁)T 46 9 5 0 1 B7 5. Description of the invention (β), one of 406, 407, respectively connected to a single-wavelength oscillating laser (11 or 12) and an optical modulation element (12 or 22) 'for a single wavelength The temperature control and current control of the oscillating laser, at the same time, the driving voltage pulse is applied to the light modulation element, and the timing and magnitude of the voltage pulse can be further controlled. Therefore, at least one of the fiber output control devices detects the intensity, center wavelength, and wavelength width of pulsed light (visible light, infrared, or ultraviolet light that has been wavelength-converted at least once in the fundamental wave or wavelength conversion section), and detects accordingly. Feedback controls the temperature of a single-wavelength oscillating laser, and controls the center wavelength and wavelength width of the pulsed light. Further, according to the detection, current control of a single-wavelength oscillating laser and control of a voltage pulse applied to a light modulation element are controlled, and intensity of the pulsed light, output interval, and start and stop of pulse output are controlled. In addition, at least one fiber output control device performs switching between pulse output and continuous output of a single-wavelength oscillating laser, and controls the output interval and pulse amplitude at the time of the pulse output, and is also used to compensate for pulse light output variations. And, one of the oscillation control of the single-wavelength laser and the control of the light modulation element is performed. In FIG. 8, the premise is that a large-mode fiber optical amplifier is used. However, the current control of the semiconductor laser (401, etc.) for excitation, which is connected to the fiber optical amplifier, described here, and single-wavelength oscillation The control of laser and light modulation components can also be applied to the ultraviolet laser devices of the first and second embodiments described above without using large-mode fiber optical amplifiers (see Figures 1 and 2) ° __38_____ Paper size applicable China National Standard (CNS) A4 Specification (210x 297 mm) " " '(Please read Note i on the back before filling this page)

16J 經濟部智慧財產局員工消費合作社印製 -I 1 ^ I ϋ n ial it n ϋ _ 4 6 9 5 0 1 A7 B7 五、發明說明（4) (請先閱讀背面之注意事項再填寫本頁) 又，在第1及第2實施形態之最終段的纖維光增幅器 19、25之輸出端係成形爲所欲之束狀（114、29)，束的數 目及形狀係配合波長變換部之構成及所需之光源的形狀而 定。例如，在前述之各實施形態，其係表示具有一圓形截 面之束（114、29、501、601等）之場合。此時，由於各纖 維層的直徑爲125//m程度，因此形成128束之輸出端之束 的直徑約爲2 mm以下。形成束狀雖可使用原來最後段的 EDFA或YDFA之輸出端，但，其亦可在最終端的EDFA或 YDFA結合無摻雜之纖維，而於該輸出端形成束狀。 --線 J. 又，如圖9所示，在光增幅器之最終段的各纖維422 的輸出端面423，較佳係將纖維422內之芯部421之徑配設 爲朝向輸出端且形成錐狀漸漸擴大，並使在輸出端面423 之光的電力密度（每單位面積之光強度）變小。此時，錐 狀設定爲芯部的範圍係往輸出端面423十分緩慢地增加， 雨被增幅後之雷射光係在傳送錐狀部時，在纖維中之傳送 模模式被保存，而其它之橫模式之激起係變爲可忽略之程 度（例如數mrad程度）。 經濟部智慧財產局員工消費合作社印製 依此設定，可降低在纖維的輸出端面423之光的電力 密度，並可獲得大幅地抑制對於纖維的損傷最嚴重的問題 之因纖維輸出端部的雷射光所造成之損傷的效果。又，由 纖維光增幅器之輸出端所射出之雷射光的電力密度越高（ 例如，光強度越高，或對同一電力之芯徑越小，或分割全 電力之通道數越少），則越可獲得更大之效果。 又，如圖10(a)所示，在最終段的纖維432的輸出端部 39 本紙張尺度適用中國國家標準 (CNS)A4規格（210 X 297公釐） A7 4 6 9 5 0 1 ___B7 五、發明說明（VI) 434，較佳係配置與上述芯徑之擴大，或藉由雷射光之電力 密度單獨的密著使雷射透過之適當厚度的窗部件433。但 ，在圖10(a)係不擴大纖維內之芯部431之徑’僅以窗部件 433使輸出光之電力密度降低。 此處，如前述之第1及第2實施形態’在纖維輸出爲 複數之場合，除了圖10(a)之於每一纖維端部設置窗部件的 方法之外，如圖10(b)所示，在各纖維光增幅器442的每一 輸出群之輸出端部444，設置共通之窗部件443，亦是在本 形態之一實施例》但，在圖10(b)雖未擴大纖維內之芯部 441之徑，其亦可將芯徑的擴大倂用。 又，以共通方式設置一個窗部件443之複數的纖維光 增幅器數可爲任意，例如，於圖1或圖2所示之最終段的 纖維光增幅器19或25之總數，即128個亦可。又，窗部 件（ 433或443)係考慮到在基本波雷射光的波長領域的透 過率及與纖維的密著性等因素，其材質係適當選定（例如 ，：BK7等之光學玻璃材料或石英等），又，纖維與窗部件 之密著可使用光學接觸或融著等方法。 依此構成，由窗部件所射出之雷射光的電力密度，由 於比在纖維芯部431、441中之電力密度小，因此，可獲得 抑制因纖維輸出端部的雷射光所造成之損傷的效果。又， 藉由配合在前述輸出端部之纖維芯徑的擴大，而可解決習 知問題之纖維輸出端部之損傷的問題。 又，在以上各實施形態（圖丨、2、4、8)，其係表示 爲避免反射光之影響，而在各連接部插入適當之隔離器 40 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） .-------------ί- (-------- 訂-----------線4 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 469501 ____B7 五、發明說明（） 110、111、112、26、27、404等，以及爲獲得良好的EDFA 增幅特性，而插入狹帶域濾波器113、28、403之構成例。 但，隔離器或狹帶域濾波器之配置處或數量並未限定於前 述之實施形態，例如，順應適用於本發明之雷射光源的各 種裝置（曝光裝置等）之要求精密度而作適當決定即可， 有時亦未設置隔離器或狹帶域濾波器其中之一者β 又，狹帶域濾波器若僅對所欲之單一波長而可獲得高 透率，則濾波器之透過波長寬在lpm以下即可。依此，藉 由使用狹帶域濾波器，而可減輕因在纖維增幅器所產生之 ASE (自然放出光）所造成之雜訊，並且，可抑制因來自 前段的纖維光增幅器之ASE所造成之基本波輸出的增幅率 降低。 又，在前述之實施形態，事先監控在光調變元件12及 22所送出之脈衝光的強度及纖維光增幅器的輸出，並且， 爲使每一脈衝之強度變爲一定，可調整施加於光調變元件 之驅動用電壓脈衝及偏離DC電壓的大小，回授控制脈衝 光之強度。進而，檢測由多數之纖維光增幅器19、25所產 生之雷射光，監控在各通道之雷射光的延遲時間及在通道 間之雷射光的振盪間隔等，爲使該延遲時間與振盪間隔等 分別形成所定値，可藉由控制施加於光調變元件之驅動用 電壓脈衝的時序，或控制圖2中之TDM 23，而回授控制在 纖維束輸出端的雷射光之振盪時序。又，亦可檢測來自波 長變換部500所產生之紫外線的波長，依該檢測値而調單 一波長振盪雷射11、21之溫度，回授控制紫外線的波長。 41 本紙張尺度適用中國國家標準（CNS)A‘l規格（210 x 297公釐） -------------~ \----------訂 --------線.4 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 46 95 0 1 a? ___B7 五、發明說明（) 進而，檢測在光調變元件12、22所送出之脈衝光的度 變動，爲補償此輸出變動，可控制配置在比光調變元件更 後段之複數段之纖維光增幅器（13、18、19、24、25)其 中至少一段之增益，即進行所謂的正饋(Feed Forward)控制 。又，其亦可在前述之通道〇〜127之中，檢測延遲時間較 短的通道，即脈衝光較快被輸出之通道的輸出（光強度） ，依該檢測値而控制纖維光增幅器之增益（或TDM 23)， 正饋控制比該通道之延遲時間更長的通道，即脈衝光較慢 被輸出之通道的輸出。又，特別是在圖1所示之第1實施 形態，其並非以通道單位來控制其輸出，而是以具有32個 通道之驅域單位來控制其輸出，例如，檢測第1區域之至 少一個通道的輸出，依該檢測値而控制在第2區域之通道 的輸出亦可。 其次，參照圖3說明本發明之紫外線雷射裝置之第3 實施形態·>依本實施形態之紫外線產生裝置，其係提供由 單一波長振盪雷射31所形成，用以產生單一波長的雷射光 之雷射光產生部；及由纖維光增幅器33、34所形成，用以 增幅射入光之光增幅器，並將該被增幅之光進行波長變換 之波長變換部（未圖示）等所構成，以產生與ArF準分子 雷射相同輸出波長（193nm)，或與民雷射相同波長（ 157nm)之雷射光的紫外線雷射裝置。 在本實施形態，在圖3所示之紫外線雷射裝置，具有 產生單一波長的雷射光之單一波長振盪雷射31，此單一波 長振盪雷射31之輸出光被纖維光增幅器33、34所增幅。 __ 42 本紙張尺度適用中國國家標準(^ns)A4規格（210 x 297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂---------線4· 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 46 95 0 1 A7 B7 五、發明說明（>。） 此纖維光增幅器34之輸出，係於如圖13所示之波長變換 部（ 602〜611)射入被增幅後之雷射光。又，在圖3之纖 維光增幅器34之射出端係對應於圖11及圖13所示之纖維 束射出端501及601。此波長變換部具有一組之非線形光 .學結晶602、604、609、611等所構成，將由光增幅器（31 〜36)所射出之基本波變換爲紫外線。又，有關本發明之 波長變換部於後述之第4〜7實施形態詳細說明之^ 以下，詳述本實施形態。作爲圖3所示之以單一波長 振盪之單一波長振盪雷射31，例如，使用振盪波長1.544/z m，CW輸出30mW之InGaAsP，DFB半導體雷射。此DFB 半導體雷射由於係作基本的單一縱橫式振盪，因此可將其 振盪光譜線寬抑制在0.01pm以下。 此半導體雷射31之光輸出（連續光）係藉由例如電氣 光學光調變元件或音響光學光調變元件等之光調變元件32 而變換爲脈衝光。作爲本例之一例，說明有關藉由此光調 變元件32而變調爲脈衝幅度Ins，頻率ΙΟΟΚΗζ之脈衝光 之場合。依此進行光調變後之結果，由光調變元件32所輸 出之脈衝光之最大輸出則變爲30mW，平均輸出爲3 yW。 與前述第1及2實施形態同樣地，被脈衝化之輸出光 係被具有一段或多段之EDFAC (餌摻雜纖維光增幅器）之 纖維光增幅器所增幅。在本實施形態，作爲其中之一例， 說明藉由2段之纖維光增幅器33、34，進行合計58dB ( 667000倍）之增幅之場合。於此場合，在此纖維光增幅器 34之輸出端之平均輸出爲2W。此輸出端部雖可使用原最 43 泰Ϊ氏張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐） -------------{ ..-in---i 訂--------線—i (請先閱讀背面之注意事項再填寫本頁〕 A7 469501 __B7____ 五、發明說明（W) 終段之纖維光增幅器34之輸出端而形成，但，亦可在最終 段之纖維光增幅器34結合無摻雜之纖維。又，在本實施形 態，說明爲避免反射光之影響，而於各連接部插入適當之 隔離器35、36之構成例。 作爲此光增幅器之輸出的波長1.544之單一波長脈 衝雷射光，其係藉由使用非線形光學結晶之波長變換部而 變換爲光譜線寬較窄之紫外線脈衝輸出。又，依本實形態 之光增幅器（31〜36)，其輸出端雖由一個纖維光增幅器 34所形成，但不可如在第1實施形態所使用之半板導波路 型分束器（16)，或在第2實施形態所使用之TDM (23) ，同時，使纖維光增幅器（33、34)分別準備，使纖維光 增幅器34成束，形成纖維束。此時，較佳係調整施加於分 別設複數之光增幅器之光調變元件32的驅動用電壓脈衝之 時序’設爲可調整由複數之光增幅器所射出之脈衝光的振 盪間隔’例如，使其以等時間間隔而讓脈衝光依序發光， 並將每一光增幅器之發光時序錯開β 又’在本實施形態亦可適用於前述第1及第2實施形 態。例如’可使單一波長振盪雷射31非脈衝振盪，進而， 僅使用單一波長振盪雷射31之電流控制，或倂用該電流控 制與光調變元件32之控制，而變更脈衝光之輸出間隔（脈 衝週期）。 其次’說明在前述第1〜3實施形態所使用之波長變換 部的實施形態。圖11(a)〜(d)依表示本發明之波長變換部之 構成例作爲第4實施形態’這些任何一種皆表示將自纖維 ____44 —尺度適用中國國家標準（CNS)A4規格<210 X 297公f —) _ (請先閲讀背面之注意事項再填寫本頁) ------丨一訂-I I ---!^^丄 經濟部智慧財產局具工消費合作社印製 9 5 0 1 A7 _B7__~ 五、發明說明（以） (請先閱讀背面之注f項再填寫本頁) 束之輸出端501 (雖相當於第1實施形態之114，第2實施 形態之29等，亦可爲第3實施形態之單一纖維34之輸出 端）所射出之波長1.544nm的基本波，使用非線形光學結 晶而波長變換爲8倍波（高調波），產生與ArF準分子雷 射相同波長之193nm的紫外線之構成例。 在圖11(a)，自纖維束輸出端501輸出之波長1.544nm (頻率ω)的基本波，於圖中由左向右透過非線形光學結 晶502、503、504而輸出。當基本波通過非線形光學結晶 502時，藉由產生2次高調波而產生基本波之頻率ω的2倍 ，即頻率2ω (波長爲基本波的1/2之772nm)的2倍波。 在此產生之2倍波再向右方前進而射入其次之非線形光學 結晶503。此處，再進行產生第2次高調波，以產生具有 射入波之頻率2ω的2倍，即相對於基本波4倍之頻率4ω (波長爲基本波之1M之386nm)的4倍波。在此產生之4 倍波再向右方前進至非線形光學結晶504，此處再度進行 產生第2波高調波，產生具有射入波的頻率4ω的2倍，即 相對於基本波8倍的頻率8ω之8倍波（波長爲基本波的 1/8 之 193nm)。 經濟部智慧財產局員工消費合作社印製 作爲於前述波長變換部所使用之非線形光學結晶，其 係使用例如在由基本波變爲2倍波之變換結晶502使用 LiB3〇5 (LBO)結晶，在由2倍波變爲4倍波之變換結晶 503使用LiB3〇5結晶，在由4倍波變爲8倍波之變換結晶 504使用Sr2Be3B2〇7 (SBBO)結晶。此處，使用LBO結晶 由基本波變爲2倍波之變換，其係使用對於因波長變換之 45 本紙張尺度適用中國國家標準<CNS)A4規格（210 x 297公釐） 6 95 0 A7 B7 五、發明說明（〇Λ) 相位整合而藉由LBO結晶的溫度調節的方法，Non-Critical Phase Matching (NCPM)。NCPM係有利於爲使其不產生 在非線形光學結晶內之基本波與第2高調波之角度偏移， 而可以高效率進行2倍波之變換，進而使所產生之2倍波 不會因偏移而造成光束之變形。 圖11(b)係表不在依基本波（波長1.544jtzm) —2倍波 (波長772nm) —3倍波（波長515nm) —6倍波（波長 257mn) —8倍波（波長193nm)之順序作波長變換之場合 〇 在第1段之波長變換部507，由基本波變爲2倍波之 產生2次高調波之變換，LB0結晶係使用前述之NCPM。 波長變換部（LB0結晶）507使基本波的一部份未作波長 變換而透過，同時，波長變換基本波而產生2倍波，在此 基本波與2倍波，分別以波長板（例如1/2波長板）508給 予半波長、1波長之延遲，僅使基本波之偏光旋轉90度。 此基本波與2倍波分別通過透鏡509而射入第2段之波長 變換部510 〇 在第2段之波長變換部510，藉由在第1段之波長變 換部507所產生之2倍波與未被波長變換而透過之基本波 產生和頻率而獲得3倍波（波長515nm)。雖使用LB0結 晶作爲波長變換結晶，但卻使用與第1段之波長變換部（ LB〇結晶）507溫度相異之NCPM。在波長變換部510所獲 得之3倍波與未被波長變換而透過之2倍波係以二向色反 射鏡511加以分離，在二向色反射鏡511所反射之3倍波 46 (請先閱讀背面之ii意事項再填寫本頁) 兮·*16J Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-I 1 ^ I ϋ n ial it n ϋ _ 4 6 9 5 0 1 A7 B7 V. Invention Description (4) (Please read the precautions on the back before filling this page The output ends of the fiber optical amplifiers 19 and 25 in the final stage of the first and second embodiments are formed into a desired beam shape (114, 29), and the number and shape of the beams are matched with those of the wavelength conversion unit. Depending on the composition and shape of the required light source. For example, in each of the foregoing embodiments, it is shown that the bundle (114, 29, 501, 601, etc.) has a circular cross section. At this time, since the diameter of each fiber layer is about 125 // m, the diameter of the bundle forming the output end of the 128 bundles is about 2 mm or less. Although the output end of the original EDFA or YDFA can be used to form a bundle, it can also be combined with an undoped fiber at the final EDFA or YDFA to form a bundle at the output. --Line J. Also, as shown in FIG. 9, the output end face 423 of each fiber 422 in the final stage of the optical amplifier is preferably arranged such that the diameter of the core portion 421 in the fiber 422 faces the output end and is formed. The tapered shape is gradually enlarged, and the power density (light intensity per unit area) of the light at the output end face 423 becomes smaller. At this time, the cone shape is set so that the range of the core portion increases very slowly toward the output end face 423. When the laser light amplified by the rain is transmitted in the cone portion, the transmission mode mode in the fiber is saved, and the other horizontal The degree of arousal of the mode becomes negligible (for example, several mrad). According to this setting, the employees ’cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs can reduce the power density of the light on the output end face 423 of the fiber, and can greatly suppress the thunder caused by the output end of the fiber. The effect of light damage. In addition, the higher the power density of the laser light emitted from the output end of the fiber optical amplifier (for example, the higher the light intensity, or the smaller the core diameter for the same power, or the fewer the number of channels that divide the full power), then The greater the effect can be obtained. Also, as shown in Fig. 10 (a), the output end of the fiber 432 in the final section 39 paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 4 6 9 5 0 1 ___B7 5 6. Description of the Invention (VI) 434 is preferably a window member 433 of an appropriate thickness that is configured to be enlarged with the above-mentioned core diameter, or that the laser light passes through the power density separately and closely. However, in FIG. 10 (a), the diameter of the core portion 431 in the fiber is not enlarged, and only the window member 433 is used to reduce the power density of the output light. Here, as in the aforementioned first and second embodiments, when the fiber output is plural, except for the method of providing a window member at each fiber end portion as shown in FIG. 10 (a), as shown in FIG. 10 (b) It is shown that the common window member 443 is provided at the output end portion 444 of each output group of each fiber optical amplifier 442, which is also an embodiment of this form. However, although the fiber is not enlarged in FIG. 10 (b), The diameter of the core portion 441 can also be used to increase the core diameter. In addition, the number of the plurality of fiber optical amplifiers provided with one window member 443 in a common manner may be arbitrary, for example, the total number of fiber optical amplifiers 19 or 25 in the final stage shown in FIG. 1 or FIG. 2, that is, 128 can. In addition, the window member (433 or 443) takes into consideration factors such as the transmittance in the wavelength range of the fundamental laser light and the adhesion to the fiber, and its material is appropriately selected (for example, optical glass materials such as BK7 or quartz Etc.) In addition, the fiber and the window member can be adhered by optical contact or fusion. With this configuration, the power density of the laser light emitted from the window member is smaller than the power density of the fiber core portions 431 and 441, so that the effect of suppressing damage caused by the laser light at the fiber output end portion can be obtained. . In addition, the problem of damage to the output end portion of the fiber, which is a conventional problem, can be solved by expanding the core diameter of the fiber fitted to the output end portion. In addition, in the above embodiments (Figures 1, 2, 4, and 8), it is indicated that in order to avoid the influence of reflected light, an appropriate isolator is inserted in each connection part. This paper standard applies Chinese National Standard (CNS) A4. Specifications (210 X 297 mm) .------------- ί- (-------- Order ----------- Line 4 (please first Read the notes on the back and fill out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 469501 ____B7 V. Description of the invention () 110, 111, 112, 26, 27, 404, etc., and to obtain good EDFA gain characteristics And insert the narrow-band filter 113, 28, and 403. However, the configuration or number of the isolator or narrow-band filter is not limited to the aforementioned embodiment, for example, it conforms to the thunder applicable to the present invention. The accuracy of the various devices (exposure devices, etc.) required for the light source can be determined appropriately. Sometimes, one of the isolator or the narrowband filter is not provided. Also, if the narrowband filter is If a single wavelength is required to achieve high transmittance, the transmission wavelength of the filter can be less than lpm. Therefore, by using narrow Domain filter, which can reduce the noise caused by the ASE (naturally emitted light) generated by the fiber amplifier, and can suppress the increase rate of the fundamental wave output caused by the ASE from the fiber amplifier of the previous stage In addition, in the aforementioned embodiment, the intensity of the pulsed light sent from the light modulation elements 12 and 22 and the output of the fiber optical amplifier are monitored in advance, and in order to make the intensity of each pulse constant, it can be adjusted. The magnitude of the driving voltage pulse and the deviation from the DC voltage applied to the light modulation element feedbacks the intensity of the pulsed light. Furthermore, the laser light generated by most fiber optical amplifiers 19 and 25 is detected and monitored in each channel. The delay time of the laser light and the oscillation interval of the laser light between the channels, etc. In order to form the predetermined delay time and the oscillation interval, etc., the timing of the driving voltage pulses applied to the light modulation element can be controlled, or The TDM 23 in FIG. 2 is controlled, and the oscillation timing of the laser light at the output end of the fiber bundle is controlled by the feedback control. In addition, the wavelength of the ultraviolet light generated from the wavelength conversion section 500 can also be detected. Long, according to the detection, adjust the single-wavelength laser temperature of 11, 21, and feedback control the wavelength of ultraviolet rays. 41 This paper size applies the Chinese National Standard (CNS) A'l specification (210 x 297 mm)- ----------- ~ \ ---------- Order -------- line. 4 (Please read the notes on the back before filling this page) Ministry of Economy Printed by the Intellectual Property Bureau employee consumer cooperative 46 95 0 1 a? ___B7 V. Description of the invention () Furthermore, the intensity of the pulsed light emitted by the light modulation elements 12, 22 is detected. To compensate for this output variation, the configuration can be controlled The gain of at least one of the fiber optical amplifiers (13, 18, 19, 24, 25) at the later stage than the optical modulation element is called the so-called feed forward control. In addition, among the aforementioned channels 0 to 127, it is also possible to detect the channel with a short delay time, that is, the output (light intensity) of the channel where the pulsed light is output faster, and control the fiber optical amplifier according to the detection threshold. Gain (or TDM 23), the feedforward control of the channel whose delay time is longer than that of the channel, that is, the output of the channel where the pulse light is output slowly. In particular, in the first embodiment shown in FIG. 1, the output is not controlled in channel units, but the output is controlled in drive domain units with 32 channels. For example, at least one of the first regions is detected. The output of the channel may be controlled by the output of the channel in the second area according to the detection signal. Next, a third embodiment of the ultraviolet laser device according to the present invention will be described with reference to FIG. 3. The ultraviolet generator according to this embodiment provides a single-wavelength laser 31 for generating a single-wavelength laser. A laser light generating section for the emitted light; and a wavelength converting section (not shown) formed by the fiber optical amplifiers 33 and 34 for amplifying the incident light and performing wavelength conversion on the amplified light It is composed of an ultraviolet laser device that generates laser light with the same output wavelength (193nm) as that of ArF excimer laser, or the same wavelength (157nm) as that of civilian laser. In this embodiment, the ultraviolet laser device shown in FIG. 3 has a single-wavelength oscillating laser 31 that generates laser light of a single wavelength. The output light of this single-wavelength oscillating laser 31 is transmitted by the fiber optical amplifiers 33 and 34. Increase. __ 42 This paper size is in accordance with Chinese national standard (^ ns) A4 size (210 x 297 mm) (Please read the precautions on the back before filling this page) Order --------- Line 4 · Ministry of Economy Printed by the Intellectual Property Bureau employee consumer cooperatives Printed by the Ministry of Economics Intellectual Property Bureau employee consumer cooperatives 46 95 0 1 A7 B7 V. Description of the invention (>) The output of this fiber optical amplifier 34 is shown in Figure 13 The wavelength conversion unit (602 ~ 611) emits the laser light after being amplified. The output ends of the fiber optical amplifier 34 in Fig. 3 correspond to the fiber bundle output ends 501 and 601 shown in Figs. 11 and 13. This wavelength conversion unit has a set of non-linear optical crystals 602, 604, 609, 611, etc., and converts the fundamental waves emitted by the optical amplifiers (31 to 36) into ultraviolet rays. In addition, the wavelength conversion section of the present invention will be described in detail in the fourth to seventh embodiments described later. Hereinafter, this embodiment will be described in detail. As the single-wavelength oscillating laser 31 oscillating at a single wavelength shown in FIG. 3, for example, an InGaAsP or DFB semiconductor laser having an oscillating wavelength of 1.544 / z m and a CW output of 30 mW is used. Since this DFB semiconductor laser is basically a single vertical and horizontal oscillation, its oscillation spectral line width can be suppressed below 0.01pm. The light output (continuous light) of this semiconductor laser 31 is converted into pulsed light by a light modulation element 32 such as an electro-optical light modulation element or an acoustic optical light modulation element. As an example of this example, a description will be given of a case where the light modulation element 32 is used to modulate the pulse light having a pulse width Ins and a frequency of 100KΗζ. As a result of performing the light modulation according to this, the maximum output of the pulsed light output from the light modulation element 32 becomes 30 mW, and the average output is 3 yW. As in the first and second embodiments described above, the pulsed output light is amplified by a fiber optical amplifier having one or more sections of EDFAC (bait-doped fiber optical amplifier). In this embodiment, as an example, a case where a total of 58 dB (667,000 times) increase is performed by the two-stage fiber optical amplifiers 33 and 34 will be described. In this case, the average output of the output end of the fiber optical amplifier 34 is 2W. Although this output end can use the original 43 Tai's scale, applicable to China National Standard (CNS) A4 specifications < 210 X 297 mm) ------------- {..- in --- i order -------- line-i (please read the precautions on the back before filling this page) A7 469501 __B7____ V. Description of the invention (W) The output end of the fiber optic amplifier 34 in the final stage It is formed, but it is also possible to combine non-doped fibers with the fiber optical amplifier 34 in the final stage. In this embodiment, it is explained that in order to avoid the influence of reflected light, an appropriate isolator 35 is inserted in each connection portion. A configuration example of 36. The single-wavelength pulsed laser light with a wavelength of 1.544 output by this optical amplifier is converted into an ultraviolet pulse output with a narrow spectral line width by using a wavelength conversion section of a non-linear optical crystal. Although the optical amplifier (31 ~ 36) of this actual form has an output end formed by a fiber optical amplifier 34, it cannot be used as the half-plate waveguide type beam splitter (16) used in the first embodiment. Or, in the TDM (23) used in the second embodiment, the fiber optical amplifiers (33, 34) are prepared separately so that The fiber optical amplifiers 34 are bundled to form a fiber bundle. At this time, it is preferable to adjust the timing of the driving voltage pulses applied to the light modulation elements 32 provided with a plurality of optical amplifiers, respectively. The oscillation interval of the pulsed light emitted by the amplifier is 'for example, the pulsed light is sequentially emitted at equal time intervals, and the light emission timing of each optical amplifier is staggered by β.' Also in this embodiment, it can be applied to the foregoing. The first and second embodiments. For example, 'the single-wavelength laser 31 can be non-pulsed, and further, only the current control of the single-wavelength laser 31 can be used, or the current control and the light modulation element 32 can be used. Then, the output interval (pulse period) of the pulsed light is changed. Next, the embodiment of the wavelength conversion section used in the aforementioned first to third embodiments will be described. Figs. 11 (a) to (d) show the wavelength conversion of the present invention. The example of the constitution of the Ministry is the fourth embodiment. Any of these means that the fiber ____44-the size applies the Chinese National Standard (CNS) A4 standard < 210 X 297 male f-) _ (Please read the precautions on the back first (Fill in this page) ------ 丨 Order-II ---! ^^ 印 Printed by the Industrial Property Cooperative of the Intellectual Property Bureau of the Ministry of Economy 9 5 0 1 A7 _B7__ ~ V. Description of the invention (with) (please first Read the note f on the back and fill in this page again) Output end 501 of the bundle (Although it is equivalent to 114 of the first embodiment, 29 of the second embodiment, etc., it can also be the output end of the single fiber 34 of the third embodiment) An example of a configuration in which the emitted fundamental wave having a wavelength of 1.544 nm is converted into an 8-fold wave (high-frequency wave) using a non-linear optical crystal and generates 193 nm ultraviolet light having the same wavelength as an ArF excimer laser. In Fig. 11 (a), a fundamental wave having a wavelength of 1.544 nm (frequency ω) output from the fiber bundle output terminal 501 is transmitted through the non-linear optical crystals 502, 503, and 504 from left to right in the figure. When the fundamental wave passes through the non-linear optical crystal 502, it generates 2 times of the frequency ω of the fundamental wave by generating the second-order high-frequency wave, that is, twice the frequency of 2ω (the wavelength is 772nm of 1/2 of the fundamental wave). The doubled wave generated here advances to the right and enters the next non-linear optical crystal 503. Here, the second high-frequency wave is generated to generate a wave having a frequency 2ω that is twice the frequency of the incident wave, that is, a wave 4 times the frequency 4ω (wavelength is 386nm of 1M of the fundamental wave) with respect to the frequency 4 times the fundamental wave. The 4x wave generated here progresses to the right to the non-linear optical crystal 504. Here, the second wave high-frequency wave is generated again to generate 2 times the frequency of the incident wave 4ω, which is 8 times the frequency of the fundamental wave. 8 times 8ω (wavelength is 1/8 of the fundamental wave, 193nm). The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a non-linear optical crystal used in the aforementioned wavelength conversion department. It uses, for example, a LiB305 (LBO) crystal in a conversion crystal 502 that changes from a fundamental wave to a double wave. LiB3O5 crystal was used as the conversion crystal 503 from 2x to 4x waves, and Sr2Be3B207 (SBBO) crystal was used as the conversion crystal 504 from 4x to 8x waves. Here, the LBO crystal is used to transform the fundamental wave into a 2x wave, which uses the Chinese paper standard < CNS) A4 (210 x 297 mm) for 45 paper sizes due to wavelength conversion. 6 95 0 A7 B7 V. Description of the Invention (〇Λ) Non-Critical Phase Matching (NCPM) is a method of phase integration and temperature adjustment by LBO crystallization. NCPM is beneficial to avoid the angular shift between the fundamental wave and the second high-profile wave in the non-linear optical crystal, and it can transform the double wave with high efficiency, so that the generated double wave will not be deflected. This will cause deformation of the beam. Figure 11 (b) shows the order of the fundamental wave (wavelength 1.544 jtzm)-2 times wave (wavelength 772nm)-3 times wave (wavelength 515nm)-6 times wave (wavelength 257mn)-8 times wave (wavelength 193nm) In the case of wavelength conversion: In the first wavelength conversion section 507, the fundamental wave is converted into a double wave to generate a second high-frequency wave conversion. The LB0 crystal system uses the aforementioned NCPM. The wavelength conversion unit (LB0 crystal) 507 transmits a part of the fundamental wave without wavelength conversion, and at the same time, converts the fundamental wave to generate a double wave. Here, the basic wave and the double wave are respectively a wavelength plate (for example, 1 / 2 wave plate) 508 gives half-wavelength, 1-wavelength delay, and rotates the polarized light of the fundamental wave by 90 degrees only. The fundamental wave and the doubled wave are transmitted through the lens 509 to the wavelength conversion section 510 in the second stage. The wavelength conversion section 510 in the second step is generated by the wavelength conversion section 507 in the first step. It generates 3 times wave (wavelength 515nm) with the generation and frequency of the fundamental wave transmitted without wavelength conversion. Although the LB0 crystal is used as the wavelength conversion crystal, an NCPM having a temperature different from that of the wavelength conversion unit (LB0 crystal) 507 in the first stage is used. The 3x wave obtained in the wavelength conversion section 510 is separated from the 2x wave transmitted without wavelength conversion by a dichroic mirror 511, and the 3x wave 46 reflected by the dichroic mirror 511 (please first Read the meanings on the back and fill in this page) xi · *

T 經濟部智慧財產局員工消費合作社印製 本纸張尺度適用令國國家標準（CNS)A4規格（210 x 297公釐） 46 95 0 1 A7 Β7 五、發明說明（W) 通過透鏡513而射入第3段之波長變換部514 »波長變換部 514係/5-BaB2CU (BBO)結晶，此處，3倍波係藉由產生2 次高調波而變換爲6倍波（波長257nm)。 在波長變換部514所獲得之6倍波與透過二向色反射 鏡511並通過透鏡512之2倍波，藉由二向色反射鏡516 作同軸合成而射入第4段之波長變換部517。波長變換部 517係使用BBO結晶，藉由6倍波與2倍波產生和頻率而 獲得8倍波（波長193nm)。圖11(b)之構成，作爲第4段 之波長變換部517的波長變換結晶’可取代BBO結晶，而 使用 CsLiB^Ou) (CLBO)結晶。 又，在本實施例，第2段之波長變換部510所獲得之 3倍波與2倍波，以二向色反射鏡511加以分歧，而在第3 段之波長變換部514所獲得之6倍波與在第2段之波長變 換部510所獲得之2倍波，以二向色反射鏡516加以合成 而射入第4段之波長變換部517。此處，作爲改變二向色 反射鏡511之特性，即使3倍波透過而使2倍波反射，可 將第3段之波長變換部514配置於與第2段之波長變換部 514之同一光軸上。此時，亦有必要事先改變二向色反射 鏡516之特性。在如此使6倍波及2倍波其中之一通過分 歧光路而射入第4段之波長變換部517之構成，可將使6 倍波與2倍波分別射入第4段之波長變換部5Π的聚光透 鏡515、512配置爲彼此相異之光路。 在第3段之波長變換部514所產生之6倍波，爲使其 截面形狀藉由偏移現象而變爲橢圓形，及在第4段之波長 47 (請先閱讀背面之注意事項再填寫本頁) --------^--------- 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐） 4 6 9 5 0 1 A7 B7 五、發明說明（β) 變換部517獲得良好的變換效率，較佳係進行該6倍波之 束整形。此處，如本實施例，藉由將聚光透鏡515、512分 別配置於相異之光路，而可使用例如圓筒形透鏡作爲透鏡 515，並可容易地進行6倍波之束整形。因此’可良好地使 在第4段之波長變換部（BBO結晶）517之2倍波重疊， 而可提高變換效率。 又，在第2段之波長變換部510與第4段之波長變換 部517之間的構成並不限於圖11(b)，爲使6倍波與2倍波 同時射入第4段之波長變換部517，若可使6倍波與2倍 波之光路長相等，任何構成皆可。進而，將第3段及第4 段之波長變換部514、517配置成與第2段之波長變換部 510同一光軸上，在第3段之波長變換部514，僅將3倍波 藉由產生第2高調波而變換爲6倍波，同時與未被波長變 換之2倍波射入第4段之波長變換部517亦可，依此，則 不須使用二向色反射鏡511、516。 圖11(c)係表示依基本波（波長1.5444m) —2倍波（ 波長772nm) —4倍波（波長386nm) ->6倍波（波長 257nm) -8倍波（波長193nm)的順序而作波長變換之場 合。 在第1段之波長變換部518係使用LBO結晶作爲其波 長變換結晶，爲使基本波作2倍波之波長變換，其LB〇結 晶係用NCPM。自第1段之波長變換部518所產生之2倍 波係通過聚光透鏡519而射入第2段之波長變換部520。 在第2段之波長變換部520，使用LBO結晶作爲其波 48 本紙張尺度適用中國國家標準（CNS)A4規格（210 公爱） (請先閱讀背面之注意事項再填寫本頁) i訂---------線' 經濟部智慧財產局員工消費合作社印製 4 6 9 5 〇 1 A7 __ B7 五、發明說明（4) 長變換結晶，由在第1段之波長變換部518所產生之2倍 波藉由產生2次高調波而獲得4倍波（波長386nm)。在 波長變換部520所獲得之4倍波與未被波長變換而透過波 長變換部520之2倍波，藉由二向色反射鏡521加以分離 ’此處被反射之4倍波係通過聚光透鏡524而到達二向色 反射鏡525。另一方面，透過二向色反射鏡521之2倍波係 以半波長板522將其偏光方向旋轉90度，同時通過聚光透 鏡523而到達二向色反射鏡525，此處與通過分歧光路之2 倍波作同軸合成而射入第3段之波長變換部526。 在第3段之波長變換部526，使用BBO結晶作爲波長 變換結晶，藉由將在第2段之波長變換部520所產生之4 倍波與未被波長變換而透過波長變換部520之2倍波產生 和頻率而獲得6倍波（波長257nm)。在波長變換部520 所獲得之6倍波與未被波長變換而透過波長變換部520之 2倍波，藉由二向色反射鏡527加以分離，在此處被反射 之2倍波係以半波長板528使其偏光方向作90度旋轉，同 時通過聚光透鏡529而到達二向色反射鏡531。另一方面 ，透過二向色反射鏡527之6倍波係通過聚光透鏡530而 到達二向色反射鏡531，在此處與通過分歧光路之2倍波 作同軸合成而射入第4段之波長變換部532。 在第4段之波長變換部532，其係使用BBO結晶作爲 波長變換結晶，藉由在第3段之波長變換部526所產生之 6倍波與未被波長變換而透過波長變換部526之2倍波產 生和頻率而獲得8倍波（波長I93nm)。在上述構成，作 49 本紙張尺度適用+國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -1 I I I I I I « I. I I 1 I I I I ^ 1 I I I I - - -- - -- I -- - - - _ — I— I I I I . Α7 病6 95 Ο 1 _ _ Β7____ 五、發明說明（β) 爲第4段之波長變換部532之波長變換結晶，可取代ΒΒ〇 結晶，而使用CLBO結晶。 又，在本實施形態，雖於第2段及第3段之波長變換 部520、526之後分別配置二向色反射鏡521、527，由該波 長變換部（ 520、526)所射出之一對高調波（2倍波與4倍 波，或2倍波與6倍波）分別通過相異之光路而射入次段 之波長變換部（526、532 )而構成，但，其亦可與在圖 11(b)之說明同樣地，將第3段之波長變換部526與其它之 波長變換部518、520、532配置於同一光軸上，依此則不 必使用二向色反射鏡521、525、527、531等。 但，在本實施例，於第2段及第3段之波長變換部 520、526所產生之4倍波及6倍波，藉由分別因其截面形 狀之偏移現象而形成橢圓形。因此，爲在將此光束作爲輸 入之第3段及第4段之波長變換部526、532獲得良好的變 換效率，較佳係將形成射入光束之4倍波及6倍波之光束 形狀加以整形，使其良好地與2倍波光束重疊。如本實施 例，藉由聚光透鏡523與524及529與530分別於相異之 光路，例如，可使用圓筒形透鏡作爲透鏡524、530，而可 容易地進行4倍波及6倍波之光束整形。因此，在第3段 及第4段之波長變換部526、532分別可獲得良好的2倍波 之重疊，而可提高變換效率。 又，在本實施例，爲使由第2段之波長變換部520所 產生之2倍波與4倍波同時射入第3段之波長變換部526 ’可使其2倍波與4倍波之光路長一致，2個波長換部520 ______50____ 本紙張尺度適用中國國^標準（CNS)A4規格（210 >= 297^釐） (請先閱讀背面之注意事項再填寫本頁) j訂----------線丨一 經濟部智慧財產局員工消費合作杜印製T Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, Paper Size Applicable to National Standard (CNS) A4 (210 x 297 mm) 46 95 0 1 A7 Β7 V. Description of Invention (W) Shot through lens 513 The wavelength conversion section 514 in the third paragraph »The wavelength conversion section 514 is a / 5-BaB2CU (BBO) crystal. Here, the 3x wave is converted into a 6x wave (wavelength 257nm) by generating 2 high-frequency waves. The 6x wave obtained in the wavelength conversion section 514 and the 2x wave transmitted through the dichroic mirror 511 and passed through the lens 512 are coaxially synthesized by the dichroic mirror 516 and entered into the wavelength conversion section 517 in the fourth stage. . The wavelength conversion unit 517 uses a BBO crystal and obtains an 8-fold wave (wavelength 193 nm) by generating a 6-fold wave and a 2-fold wave. In the structure of Fig. 11 (b), as the wavelength conversion crystal of the wavelength conversion section 517 in the fourth stage, a CsLiB ^ Ou) (CLBO) crystal can be used instead of the BBO crystal. Moreover, in this embodiment, the third wave and the second wave obtained by the wavelength conversion unit 510 in the second stage are divided by the dichroic mirror 511, and the sixth obtained by the wavelength conversion unit 514 in the third stage is divided into six. The doubled wave and the doubled wave obtained by the wavelength conversion unit 510 in the second stage are combined by a dichroic mirror 516 and incident on the wavelength conversion unit 517 in the fourth stage. Here, in order to change the characteristics of the dichroic mirror 511, even if the third wave is transmitted and the second wave is reflected, the wavelength conversion unit 514 in the third stage can be arranged in the same light as the wavelength conversion unit 514 in the second stage On the shaft. At this time, it is also necessary to change the characteristics of the dichroic mirror 516 in advance. In this configuration, one of the 6th wave and the 2nd wave is incident on the fourth-stage wavelength conversion unit 517 through the branched optical path, and the 6th and 2nd waves can be incident on the fourth-stage wavelength conversion unit 5Π. The condensing lenses 515 and 512 are arranged to have different optical paths from each other. The 6-fold wave generated by the wavelength conversion section 514 in the third paragraph is to make its cross-sectional shape become elliptical by the offset phenomenon, and the wavelength 47 in the fourth paragraph (please read the precautions on the back before filling in (This page) -------- ^ --------- Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, this paper is printed in accordance with China National Standard (CNS) A4 specifications < 210 X 297 mm ) 4 6 9 5 0 1 A7 B7 V. Description of the Invention (β) The transforming section 517 obtains good transforming efficiency, and preferably performs the 6-times beam shaping. Here, as in the present embodiment, by arranging the condenser lenses 515 and 512 on different optical paths, for example, a cylindrical lens can be used as the lens 515, and beam shaping at 6 times can be easily performed. Therefore, it is possible to superimpose the doubled wave of the wavelength conversion section (BBO crystal) 517 in the fourth stage, and improve the conversion efficiency. The configuration between the wavelength conversion unit 510 in the second stage and the wavelength conversion unit 517 in the fourth stage is not limited to that shown in FIG. 11 (b), and the wavelengths of the 6th wave and the 2x wave are incident on the wavelength of the 4th wave at the same time. The conversion unit 517 may have any configuration as long as the optical path lengths of the 6-fold wave and the 2-fold wave are equal. Further, the wavelength conversion sections 514 and 517 of the third and fourth steps are arranged on the same optical axis as the wavelength conversion section 510 of the second step, and the wavelength conversion section 514 of the third step passes only a 3x wave by The second high-frequency wave is generated and converted into a 6-fold wave, and the 2 fold wave that has not been wavelength-converted can be transmitted to the wavelength conversion unit 517 in the fourth stage. In this way, dichroic mirrors 511 and 516 are not required. . Fig. 11 (c) shows the basic wave (wavelength 1.5444m)-2 times wave (wavelength 772nm)-4 times wave (wavelength 386nm)-> 6 times wave (wavelength 257nm) -8 times wave (wavelength 193nm) When wavelength conversion is performed sequentially. The wavelength conversion unit 518 in the first stage uses an LBO crystal as its wavelength conversion crystal, and in order to convert the fundamental wave to a wavelength of 2 times, its LB0 crystal system uses NCPM. The double wave generated from the wavelength conversion unit 518 in the first stage is incident on the wavelength conversion unit 520 in the second stage through the condenser lens 519. In the wavelength conversion section 520 of the second paragraph, the LBO crystal is used as its wave 48. This paper size applies the Chinese National Standard (CNS) A4 specification (210 public love) (Please read the precautions on the back before filling this page) -------- Line 'Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 9 5 〇1 A7 __ B7 V. Description of the invention (4) Crystal of long conversion, by the wavelength conversion unit 518 in the first paragraph The generated 2x wave is obtained by generating 2 high-frequency waves to obtain a 4x wave (wavelength: 386nm). The 4x wave obtained in the wavelength conversion section 520 and the 2x wave transmitted through the wavelength conversion section 520 without wavelength conversion are separated by a dichroic mirror 521. The 4x wave reflected here is collected by light The lens 524 reaches the dichroic mirror 525. On the other hand, the 2x wave transmitted through the dichroic mirror 521 is rotated by 90 degrees with the half-wavelength plate 522 and passed through the condenser lens 523 to reach the dichroic mirror 525. The 2 fold wave is coaxially synthesized and is incident on the wavelength conversion section 526 in the third stage. In the wavelength conversion section 526 of the third stage, a BBO crystal is used as the wavelength conversion crystal, and the 4 times wave generated by the wavelength conversion section 520 of the second stage is transmitted through the wavelength conversion section 520 twice without being converted by the wavelength. Wave generation and frequency to obtain a 6-fold wave (wavelength 257nm). The 6-fold wave obtained in the wavelength conversion section 520 and the 2-fold wave transmitted through the wavelength conversion section 520 without being wavelength-converted are separated by a dichroic mirror 527, and the 2-fold wave reflected here is in half. The wavelength plate 528 rotates its polarization direction by 90 degrees, and passes through the condenser lens 529 to reach the dichroic mirror 531. On the other hand, the 6-fold wave transmitted through the dichroic mirror 527 passes through the condenser lens 530 and reaches the dichroic mirror 531. Here, it is coaxially combined with the 2 × wave passing through the divergent optical path and enters the fourth stage. Of wavelength conversion section 532. The wavelength conversion unit 532 in the fourth stage uses a BBO crystal as the wavelength conversion crystal. The 6-fold wave generated by the wavelength conversion unit 526 in the third stage passes through the wavelength conversion unit 526-2 without being wavelength-converted. The octave generation and frequency are used to obtain an 8 octave (wavelength I93 nm). Based on the above composition, make 49 paper sizes applicable to the national standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs- 1 IIIIII «I. II 1 IIII ^ 1 IIII-----I----_ — I— IIII. Α7 disease 6 95 Ο 1 _ _ Β7 ____ 5. The description of the invention (β) is paragraph 4 The wavelength conversion crystal of the wavelength conversion section 532 can be used instead of the BBO crystal and CLBO crystal. In this embodiment, although the dichroic mirrors 521 and 527 are arranged after the wavelength conversion sections 520 and 526 in the second and third steps, respectively, one pair emitted by the wavelength conversion sections (520 and 526) High-frequency waves (2x and 4x, or 2x and 6x) are configured to pass through different optical paths and enter the wavelength conversion units (526, 532) in the next stage, but they can also be combined with In the description of FIG. 11 (b), the wavelength conversion section 526 in the third stage and the other wavelength conversion sections 518, 520, and 532 are arranged on the same optical axis. Therefore, it is not necessary to use the dichroic mirrors 521 and 525. , 527, 531, etc. However, in this embodiment, the 4x and 6x waves generated by the wavelength conversion sections 520 and 526 in the second and third steps are formed into elliptical shapes due to the shift phenomenon of their cross-sectional shapes, respectively. Therefore, in order to obtain good conversion efficiency in the wavelength conversion sections 526 and 532 of the 3rd and 4th sections where this light beam is used as an input, it is preferable to shape the beam shape of the 4th wave and 6th wave of the incident light beam. So that it overlaps well with the 2x wave beam. As in this embodiment, the condenser lenses 523 and 524 and 529 and 530 are in different optical paths, for example, a cylindrical lens can be used as the lenses 524 and 530, and the 4x and 6x waves can be easily performed. Beam shaping. Therefore, the wavelength conversion sections 526 and 532 in the third and fourth steps can obtain a good double wave overlap, respectively, and can improve the conversion efficiency. Furthermore, in this embodiment, in order to make the 2nd wave and 4th wave generated by the wavelength conversion unit 520 in the second stage simultaneously enter the wavelength conversion unit 526 'in the third stage, the 2nd wave and the 4th wave can be made. The light path length is the same, 2 wavelength conversion units 520 ______50____ This paper size is applicable to China National Standard (CNS) A4 specifications (210 > = 297 ^%) (Please read the precautions on the back before filling this page) j Order- --------- Line 丨 Printed by the Intellectual Property Bureau of the Ministry of Economy

-f B— —L I 經濟部智慧財產局員工消費合作社印製 46 95 0 1 A7 B7 五、發明說明（J) 、526之間的構成並不限於圖11(c)所示者。同理，在第3 段之波長變換部526與第4段之波長變換部532之間的構 成亦如此。 圖11(d)係表示依基本波（波長l_544#m) —2倍波（ 波長772nm) —3倍波（波長515nm) — 4倍波（波長 386nm) —7倍波（波長221nm) —8倍波（波長193nm) 之順序作波長變換之場合。 在第1段之波長變換部533，使用LBO結晶作爲波長 變換結晶，爲使基本波作2倍波之波長變換，LB◦結晶係 使用NCPM。在波長變換部未被波長變換而透過之基本波 與作波長變換所產生之2倍波，以波長板534分別給予半 波長、1波長之延遲，僅將基本波其偏光方向作90度旋轉 。在第2段之波長變換部536係使用LBO作爲波長變換結 晶，同時該LBO結晶係使用與第1段之波長變換部（LBO 結晶）533溫度相異之NCPM。在此波長變換部536，藉由 在第1段之波長變換部533所產生之2倍波與未被波長變 換而透過波長變換部533之基本波進行產生和頻率而獲得 3倍波（波長515nm)。 在波長變換部536所獲得之3倍波與未被波長變換而 透過波長變換部536之基本波與2倍波，藉由二向色反射 鏡537加以分離，在此處被反射之3倍波通過聚光透鏡540 及二向色反射鏡543而射入第4段之波長變換部545。另一 方面，透過二向色反射鏡537之基本波與2倍波通過聚光 透鏡538而射入第3段之波長變換部539 » 51 -I---------j-!--訂 *ΊΙ!--1·線-' (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） A7 469501 B7 五、發明說明（4 ) 第3段之波長變換部539，其係使用LBO結晶作爲波 長變換結晶，基本波未被波長變換而透過LBO結晶，同時 2倍波在LBO結晶藉由產生2次高調波而變換爲4倍波（ 波長386nm) □在波長變換部539所獲得之4倍波與透過 波長變換部539之基本波，藉由二向色反射鏡541加以分 離，在此所透過之基本波通過聚光透鏡564，同時被二向 色反射鏡546反射而射入第5段之波長變換部548。另一方 面，被二向色反射鏡541所反射之4倍波通過聚光透鏡542 而到達二向色反射鏡543,在此處與被二向色反射鏡537 所反射之3倍波作同軸合成而射入第4段之波長變換部 545。 第4段之波長變換部544，其係使用BBO結晶作爲波 長變換結晶，藉由將3倍波與4倍波進行產生和頻率而獲 得7倍波（波長221nm)。在波長變換部545所獲得之7 倍波通過聚光透鏡547,同時藉由二向色反射鏡546而與 透過二向色反射鏡541之基本波作同軸合成而射入第5段 之波長變換部548。 第5段之波長變換部548，其係使用LBO結晶作爲波 長變換結晶，藉由將基本波與7倍波進行產生和頻率而獲 得8倍波（波長193nm)。在上述構成，可取代7倍波產 生用BBO結晶545及8倍波產生用LBO結晶548，而使用 CLBO結晶。 在本實施例’於第4段之波長變換部545，由於3倍 波與4倍波係通過相異之光路而射入，而可將3倍波聚光 52 ----Hi! —----^ - - ------ 訂--------線 J {請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A.l規格（210 x297公釐） 經濟部智慧財產局員工消費合作社印製 46 95 0 彳 A7 B7 五、發明說明（p) 之透鏡540及將4倍波聚光之透鏡542分別設於相異之光 路。在第3段之波長變換部539所產生之4倍波，其截面 形狀係藉由偏移現像而形成橢圓形。因此，爲在第4段之 波長變換部545獲得良好的變換效率，較佳係進行4倍波 之光束整形。在本實施例，由於將聚光透鏡540、542配置 於相異之光路，可使用例如圓筒形透鏡作爲透鏡542，因 此可容易地進行4倍波之光束整形。因此，可良好地進行 在第4段之波長變換部（BBO結晶）545之3倍波之重疊 ，而可提高變換效率。 進而，在本實施形態，可將射入第5段之波長變換部 548的基本波聚光之透鏡544，及將7倍波聚光之透鏡547 分別設置於相異之光路。在第4段之波長變換部545所產 生之7倍波-其截面形狀藉由偏移現象而形成橢圓形。因 此，爲獲得在第5段之波長變換部548良好的變換效率， 較佳係進行7 ;倍波之光束整形。在本實施形態，由於可將 聚光透鏡544、547分別設於相異之光路，因此可使用例如 圓筒形透鏡作爲透鏡547，並且可容易地進行7倍波之光 束整形。因此，可將在第5段之波長變換部（LBO結晶） 548之基本波良好地重疊，而可提高變換效率。 又，在第2段之波長變換部536與第4段之波長變換 部545之間的構成，並不限於圖11(d)，其亦可於波長變換 部536所產生且以二向色反射鏡537反射之3倍波，及於 波長變換部536產生且透過二向色反射鏡537之2倍波藉 由波長變換部539作波長變換所獲得之4倍波，同時射入 53 本紙張尺度遶用中國國家標準（CNS)A4規格（210 X 297公釐) ------------JLJ-------1 訂-----------線 (請先閱讀背面之注意事項再填寫本頁) A7 46 95 0 1 ________B7_ 五、發明說明（y) 波長變換部545 ’若使兩波長變換部536、545之間的2個 光路長相等，任何一種構成皆可。此亦與在第3段之波長 變換部539及第5段之波長變換部548之間相同。 圖12(a)〜（d)係表示圖11⑻〜⑹所示之波長變換部實 驗結果所得在每一通道之各段的波長變換效率、及所得之 .8倍波（波長193nm)的平均輸出《基本波之輸出係如在前 述實施形態所述，在各通道之輸出端，最大電力20kW，脈 衝幅度Ins，脈衝頻率ΙΟΟΚΗζ，及平均輸出2W。結果，在 每一通道之8倍波（波長I93nm)之平均輸出，在圖11(a) 之波長變換部爲229mW，圖11(b)之波長變換部爲38.3mW ，圖11(c)之波長變換部爲40.3mW，圖11(d)之波長變換部 45.9mW。因此，由全部128通道合起來之光束的平均輸出 ，圖 11(a)爲 29W，,:圖 11(b)爲 4.9W，圖 11(c)爲 5.2W，圖 11(d)爲_‘5.9W，叫壬一波長變換部皆可提供作爲曝光裝置用光 源所需之充份的輸出之波長193nm的紫外線。 在這些實施形態之中，圖11(a)之構成最簡略，變換效 率也最高。因此，纖維光增幅器的通道數可比前述第1及 第2實施形態（128通道）減爲更少，例如，可提供1/2〜 1/3的通道數而構成光束，或以在本實施例所述之基本波輸 出更低之基本波輸出而構成等，作爲曝光裝置用光源所需 之充份的輸出之波長193nm的紫外線。 圖11(d)之構成，其波長變換部之段數爲5段，雖係這 些實施形態中最多者，但對193nm的變換效率係與圖11(b) 、⑷同等程度，並可獲得大致相同之紫外線輸出。又，在 54 -------------f-'---—II 訂---— II--J (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中囡國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作杜印製 4 6 9 5 0 1 a7 ___B7___ 五、發明說明（9 ) 圖11(b)、（c)之構成，由於產生8倍波（193nm)而使用 BB〇結晶，由於具有因BBO結晶之S倍波（193nm)的吸 收，而可能形成BBO結晶損傷之問題。對此’在圖11(d) 之構成，可使用LBO結晶以產生8倍波（193nm)。此 LBO結晶目前於市場容易購得良質之結晶，且由於其 193nm之紫外線的吸收係數非常小，不會造成結晶之光損 傷的問題，因此有利於其耐久性》 又，8倍波（例如波長193nm)之產生部雖使用將 LB〇結晶作角度相位整合，由於該相位整合角較大，因此 使有效非線形光學定數（deff)變小。此處，較佳係於此 LB〇結晶設置溫度控制機構，而以高溫來使用LBO結晶。 依此，可使相位整合角度小，即增加上述定數（deff)， 而可提高8倍波產生效率β 又，以上雖說明由基本波產生8倍波之波長變換部的 構成例之較佳實施形態，但本發明之波長變換部並未僅限 於此實施形態，若可產生基本波1.544#m的8倍波之構成 ，亦可獲得相同效果。例如，依基本波（波長1.544/zm) —2倍波（波長772nm) —3倍波（波長515nm) —*4倍波 (波長386nm) —6倍波（波長257nm) -7倍波（波長 221nm) —8倍波（波長i93nm)之順序進行波長變換亦可 獲得同樣效果。 此時’作爲波長變換所使用之非線形光學結晶，例如 ’由基本波變爲2倍波之變換結晶使用LBO結晶，由2倍 波變爲4倍波之變換結晶使用lb〇結晶，藉由2倍波與4 55 本紙張尺度適用中國囫家標準（CNS)A‘l規烙（21〇 X 297公釐） (請先閱讀背面之法意事項再填寫本頁) ------丨—訂--. -n n I I n I I ϋ ϋ n n 1 B7 d695〇1 五、發明說明（4) 倍波之和頻率而產生6倍波使用BBO結晶，藉由基本波與 6倍波之和頻率而產生7倍波使用BBO結晶，藉由基本波 與7倍波之和頻率而產生8倍波使用LBO結晶而達成。於 此場合，由於可使用LBO結晶以產生8倍波，因此不會造 成結晶的損傷問題。 藉由以上第4實施形態所述之波長變換部之構成，可 將在基本波產生部所產生之波長1.544μιη的基本波作波長 變換爲波長193nm之紫外線。 其次，以圖13說明本發明之波長變換部之另一構成例 作爲第5實施形態。此係由纖維束之輸出端601 (相當於 在第1實施形態之114，在第2實施形態之29等）所射出 之波長1.57//m的基本波，使用非線形光學結晶以產生10 倍波之高調波'，而產生與仏雷射相同波長之157nm的紫外 線之構成例。又，在本實施形態之基本波輸出部可與第1 〜3實施形態其中之一或將其組合而使用。 在圖13所示之波長變換部之構成例，依基本波（波長 1.57/zm) —2 倍波（波長 785nm) —4 倍波（波長 392_5nm )—8倍波（波長196.25nm) —10倍波（波長157nm)之 順序進行波長變換之場合。在本實施例，由產生2倍波至 產生8倍波爲止之各波長變換段，進行射入各波長變換段 之波長之2次高調波之產生。 又，在本例作波長變換所使用之非線形光學結晶，在 波長變換部602之藉由基本波以產生2次高調波的2倍波 的產生係使用LBO結晶，而在波長變換部604之藉由2倍 56 本紙張尺度適用中國國家標準（CNS)A4規恪（210x 297公釐） -------------J.,- _i-------^訂---------線 J (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局負工消費合作社印製 4 6 9 5 0 1 Α7 Β7 五、發明說明（％) (請先閱讀背面之注意事項再填寫本頁) 波以產生2次高調波之4倍波的產生係使用LBO結晶。進 而，在波長變換部609之藉由4倍波以產生2次高調波之 8倍波的產生係使用SnBe2B2Ch (SBBO)結晶，而在波長 變換部611之藉由2倍波與8倍波之和頻率之10倍波（波 長157nm)的產生係使用SBBO結晶。 又，由波長變換部602所產生之2倍波通過聚光透鏡 603而射入波長變換部604，此波長變換部604產生前述之 4倍波及未被波長變換之2倍波。其次，透過二向色反射 鏡605之2倍波通過聚光透鏡606,同時被二向色反射鏡 607反射而射入波長變換部611。另一方面，被二向色反射 鏡605所反射之4倍波通過聚光透鏡608而射入波長變換 部609，此處所產生之8倍波通過聚光透鏡610及二向色反 射鏡607而射入波長變換部611。進而，波長變換部611係 由在二向色反射鏡607作同軸合成之產生2倍波與8倍波 之和頻率而產生10倍波（波長157nm)。 經濟部智慧財產局員工消費合作社印製 但，在本實施例，雖以二向色反射鏡605將在第2段 之波長變換部604所產生之2倍波與4倍波分歧，使透過 此處之2倍波與以波長變換部609將4倍波作波長變換所 獲得之8倍波，使其通過相異之光路而射入第4段之波長 變換部611而構成，但，亦可不使用二向色反射鏡605、 607，而將4個波長變換部602、604、609、611配置於同 一光軸上。 但，在本實施例，在第2段之波長變換部604所產生 之4倍波，其截面形狀藉由偏移現象而變爲橢圓形。因此 57 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 469501 五、發明說明（π) ，爲在以此光束作爲輸入之第4段之波長變換部611獲得 良好的變換效率，較佳係將作爲射入光束之4倍波的光束 形狀加以整形，使2倍波之重疊良好地進行。在本實施例 ，由於聚光透鏡606、608可分別配置於相異之光路，因此 ，可使用例如圓筒形透鏡作爲透鏡608，並且可容易地進 行4倍波之光束整形。因此，可良好地進行在第4段之波 長變換部611之2倍波的重疊，而提高變換效率。 依以上所述之第5實施形態之波長變換部之構成，可 使在基本波產生部所產生之波長1.57#m之基本波作波長 變換爲波長157nm之紫外線。 圖14係表示本發明之波長變換部之另一構成例之第6 實施形態。此係如第2實施形態所述，構成基本波產生部 ，將由纖維之輸出端701 (相當於第1實施形態之114，第 2實施形態之29等）所射出之波長1.099/zm的基本波，使 用非線形光學結晶以進行產生7倍波之高調波，而產生與 F2雷射相同波長157nm的紫外線之構成例。又，在本實施 形態之基本波輸出部，可使用前述第1〜3實施形態之任一 種或將其組合而使用。 在圖14所示之波長變換部之構成例，其係表示依基本 波（波長l_099/m) —2倍波（波長549.5nm) —3倍波（ 波長363.3nm) —4倍波（波長274.8nm) —7倍波（波長 157nm)之順序而作波長變換之場合。在本實施例，於各 波長變換部進行產生射入光之2次高調波及產生和頻率。 在本例，作爲波長變換所使用之非線形光學結晶，在 58 •-------------i \--------- -------線 I (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（2]〇χ 297公釐） A7 469501 __B7___ 五、發明說明（4) 波長度變換部702之藉由基本波以產生2次高調波之2倍 波的產生使用LBO結晶，在波長變換部705之藉由基本波 與2倍波之和頻率之3倍波的產生使用LBO結晶。進而， 在波長變換部710之藉由2倍波以產生2次高調波之4倍 波的產生使用BBO結晶，在波長變換部712之藉由3倍波 與4倍波的和頻率之7倍波的產生使用SBBO結晶。 又，由波長變換部（LBO結晶）702所產生之基本波 與2倍波射入1/2波長板703，僅基本波其偏光方向作90 度旋轉，同時通過聚光透鏡704而射入波長變換部（LBO 結晶）705。波長變換部705係藉由產生基本波與2倍波之 和頻率而獲得3倍波，同時使2倍波不作波長變換而透過 。在波長變換部705所產生之2倍波與3倍波以二向色反 射鏡706加以分歧，透過此處之3倍波通過聚光透鏡707 且被二向色反射鏡708反射而射入波長變換部712。另一 方面，被二向色反射鏡706所反射之2倍波通過聚光透鏡 709而射入波長變換部710，此波長變換部710藉由2倍波 產生2次高調波而產生4倍波。此4倍波通過聚光透鏡 711及二向色反射鏡708而射入波長變換部712。此波長變 換部712藉由3倍波與4倍波之和頻率而產生7倍波。 但，在本實施例，雖將在第2段之波長變換部705所 產生之2倍波與3倍波以二向色反射鏡706加以分歧，使 透過此處之3倍波及以波長變換部710將2倍波作波長變 換所獲得之4倍波通過相異之光路，而射入第4段之波長 變換部712而構成，但，其亦可不使用二向色反射鏡706 59 本紙張尺度適用令國國家標準（CNS)A4規格（210x 297公釐） ------------^ ^--------r 訂 J-------線 J (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 4 6 9 5 A7 B7 五、發明說明（叫） 、708，而將4個波長變換部702、705、710、712配置於 同一光軸上。 但，在本實施形態，於第3段之波長變換部710所產 生之4倍波，其截面形狀係藉由偏移現象而形成橢圓形。 因此，爲在將此光束作爲輸入之第4段之波長變換部712 獲得良好的變換效率，較佳係將作爲射入光束之4倍波的 光束形狀加以整形，並良好地將3倍波重疊。在本實施例 ，由於將聚光透鏡707、711分別配置於相異之光路，因此 ，可使用例如圓筒形透鏡作爲透鏡711，而可容易地進行4 倍波之光束整形。因此，可獲得在第4段之波長變換部之 3倍波之良好的重疊，而提高變換效率。 藉由以上之第6實施形態所述之波長變換部之構成， 可將在基本波產生部所產生之波長1.099#m的基本波作波 長變換爲波長i57nm之紫外線。 其次，圖Ϊ5係表示本發明之光增幅器及波長變換部之 另一構成例之第7實施形態。圖15係表示將波長變換部作 爲複數之並聯光路構成（圖中之例爲4光路之正方形配置 )’與此配合將多數之纖維光增幅器19及25之輸出端分 割爲4個光束（輸出群），對應於此4個纖維束輸出端， 分別設置聚光光學元件及波長變換部之實施例。在本例， 由於以使用圖1或或圖2所示之光增幅器爲前提，因此， 在一個纖維束中有32個纖維光增幅器19及25形成束狀。 又’光束雖可使用原來最終段之EDFA輸出端或ydfa輸 出端而形成，但，亦可在最終段之EDFA等結合無摻雜之 60 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂---------線. 經濟部智慧財產局員工消費合作社印製 469501 A7 ___B7_____ 五、發明說明（#) 纖維，而於其輸出端形成光束。 又，在將纖維光增幅器19及25之輸出端作複數分割 而形成複數個纖維束之場合，在多數（在本例爲128個） 之纖維光增幅器19及25之中，以雷射光之射出順序而相 鄰之輸出端（纖維光增幅器）形成彼此相異之纖維束之構 成爲較佳。例如，雷射光所射出之順序，其128個纖維光 增幅器（19及25)附上0〜127之號碼’將第〇、4、8、 ......124纖維光增幅器作爲第1纖維束，第將第1、5、9、 ……125纖維光增幅器作爲第2纖維束，將第3、6、10、 ......126纖維光增幅器作爲第3纖維束，將第4、7、11、 ……127纖維光增幅器作爲第4纖維束。依此’射入對應於 每一纖維束而配置之波長變換部（非線形光學結晶）之脈 衝光的時間間隔可均等分割。 如圖15所示，由4個纖維束所形成之光增幅器（圖1 或圖2)之輸出端841所射出之基本波，在本例係分別被3 段之波長變換部842、843、844波長變換。又’在本例雖 可使用前述第4〜6實施形態所述之波長變換部（圖11、 13、14)之任何一種，但，此處係使用圖11⑷所示之波長 變換部，即，將基本波藉由3段之非線形光學結晶（ 502〜 504)而波長變換爲波長193nm之紫外線之例。因此’波長 1.544/im (頻率數ω)之基本波係於圖中由左至右透過非線 形光學結晶，以2倍波、4倍波、8倍波（波長193mn)之 順序作波長變換而輸出。 在圖15，由以4個纖維束所形成之光增幅器的輸出端 ------------------------訂---------線JI (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 469501 A7 B7 五、發明說明（4) 841所射出的基本波（波長1.544"m)，通過對應4個纖 維束而分別設置之聚光透鏡845而射入波長變換部842 ( 非線形光學結晶），此處，藉由產生2次高調波而產生基 本波之頻率ω的2倍，即頻率2ω (波長772nm)的2倍波 。在波長變換部842所產生之2倍波向右方前進，通過聚 光透鏡846而射入其次之波長變換部843 (非線形光學結 晶）。此處，再度進行產生2次高調波以產生具有射入波 (2倍波）的頻率2ω的2倍，即對基本波爲4倍之頻率4ω (波長386nm)的4倍波。在波長變換部843所產生之4 倍波通過聚光透鏡847，進而射入右邊之波長變換部844 ( 非線形光學結晶），此處，再度進行產生2次高調波，以 產生具有射入波（4倍波）的頻率4ω的2倍，即產生對基 本波爲8倍的頻率8ω (波長l93nm)之8倍波。 在此實施形態，作爲於前述波長變換部所使用之非線 形光學結晶，例如，在波長變換部842之由基本波變爲2 倍波的波長變換結晶使用LBO結晶，在波長變換部843之 由2倍波變爲4倍波的波長變換結晶使用BBO結晶，在波 長變換部844之由4倍波變爲8倍波的波長變換結晶使用 SBB◦結晶。 又，在本實施形態，已說明在依基本波（波長1.544/z m) —2倍波（波長772nm) —4倍波（波長386nm) —8倍 波（波長193nm)的順序作波長變換之場合\其係相當於 將在前述第4實施形態之圖11(a)的波長變換部作複數並聯 化之後所得者。因此，可將前述其它波長變換部之圖11(a) 62 (請先閱讀背面之注意事項再填寫本頁) r 訂·? ----------線. 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準規格（210x297公* ) 經濟部智慧財產局員工消費合作社印製 ^6 95 0 t 五、發明說明（π) 〜（d)，以與本實施形態同樣之方法作複數並聯化之構成亦 可。同樣地，將圖13及14所示之波長變換部作複數並聯 化之構成亦可。 其次，參照圖16說明光增幅器與波長變換部之結合部 ，在本實施形態之第2實施例。此實施例係將圖15所示之 波長變換部的構成作爲5個光路的並聯構成，與此配合將 纖維光增幅器之輸出端分割爲5個而形成5個纖維束（輸 出群）。此分割並不將纖維光增幅器的輸出端作均等分割 成5等分，5個纖維束（輸出群）的一部份（在圖15爲1 個纖維束）之輸出端850係以單獨或少數之纖維光增幅器 構成，其它（在圖15爲4個）之纖維束的輸出端851，使 其形成與纖維光增幅器之數量相同，而將均等分割後之複 數之纖維光增幅器形成束狀。 其次，這些輸出光係被設於每一輸出群（纖維束）之 波長變換部852〜857變換爲所定波長之紫外線，並且例如 ，提供給曝光裝置。又，3段之波長變換部852〜854係由 分別與複數（5個）之纖維束同數之波長變換部所構成， 分別配置於波長變換部852〜854之射入側之聚光光學元件 855〜857亦分別與纖維束同數之聚光透鏡所構成。 此處，將本例之紫外線雷射裝置應用於曝光裝置（圖 19或20)之場合，分別由4個纖維束之輸出端851所產生 之基本波，以波長變換部（ 852〜857 )波長變換爲紫外線 ’此紫外線作爲曝光用照明光通過照明光學系統而照射光 柵。即，4個纖維束係作爲曝光用光源。另一方面，由單 63 本紙張尺度適用中國圉家標準（CNS)A4規格（210 x 297公藿） --------------^ ^--------^訂-J--------線J (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局貝工消費合作社印製 五、發明說明（幻） 獨或少數之纖維光增幅器所構成之纖維束的輸出端850所 產生且波長變換爲紫外線之輸出光，其係被設於曝光裝置 之校準系統或監視系統所導引。即，1個纖維束（850)係 作爲校準用光源等。又，由纖維束850所產生且波長變換 爲紫外線，其係藉由例如與第3段之波長變換部854結合 之無摻雜纖維而傳送至校準系統等。 但，在圖16，由4個纖維束之輸出端所產生之基本波 作波長變換爲紫外線而導引至照明光學系統，其纖維束可 爲1個或複數個。又，在校準及監視所使用之纖維束爲1 個’但，其可爲複數個，由此複數之纖維束所射出之光可 分別導引至相異之光學系統。 在本例中，曝光用光源與校準用或監視用等所使用之 光源皆相同，與曝光用照明光及校準用照明光等爲相同之 單一波長振盪雷射之輸出光加以分歧、增幅及波長變換所 形成，可使用同一波長之紫外線。因此，校準或各監視可 透過曝光裝置之照明光學系統及投影光學系統等之光學系 統來進行。 因此，可容易地設計校準用光學系統，大幅地簡化其 構成’或不須其它設置即可構成曝光裝置。又，由於曝光 用照明光之照射與校準用照明光等之照射可不必同時進行 ，因此’例如在照明光路內分別設置快門，或選擇藉由 TDM 23將脈衝光區分之通道，較佳係將照射之時序獨立控 制。 進而’可使用前述之校準用或監視用之紫外線以計測 64 ------------,1 ^--------，.訂---------線Ji. (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（2]0 X 297公釐） A7 46 95 0 1 _______B7____ 五、發明說明（c) 投影光學系統之焦點位置、投影倍率、收差及遠距等，可 提高其計測準確度。在進行投影光學系統之成像面與感光 基板（晶圓）之對焦的場合亦可使用與曝光波長同一波長 ，並且藉由投影光學系統而進行對焦，亦可同時達成提高 其位置對準之精確度;。 但，依以上所述之本實施形態（圖15、16)之構成， 由於藉由將纖維光增幅器之纖維輸出分割爲複數之群，且 ，將非線形光學結晶之輸入光分割，因此可有效地降低非 線形光學結晶之射入電力。因此，可解決在非線形光學結 晶中之光吸收、熱效果所引起之輸出低下及光損傷等問題 。又，纖維光增幅器之輸出端的分割數（纖維束之數量）. 並不限於4個或5個，其可爲2個以上。 其次，說明在本發明之紫外線產生裝置之光增幅器與 波長變換部之結合部作爲第8實施形態。此處，光增幅器 之輸出端係如前述之第1及第2實施形態，其纖維光增幅 器之射出端係形成束狀。此時，由於各纖維光增幅器之包 層直徑爲12/zm程度，因此，可使128束形成束狀之輸出 端之束直徑約2 mm以下。 此處，束的數量及彤狀可配合波長變換部之構成與所 欲之光源的形狀而定，例如，在第1及第2實施形態所示 之具有1個圓形截面之束的場合（114、29、501、601、 701等）。此時，纖維光增幅器之輸出端部，在形成如圖9 或圖10所示之平坦面之場合，在纖維束之輸出端與第1段 之波長變換部（非線形光學結晶）之間設置聚光透鏡（例 65___ 本紙張尺度適用中國國家標準（CNS)A4規格<210 x 297公釐） ------------1 --------^訂 J-------線 i (請先閲讀背面之注f項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 6 9 5 0 1 a? B7 五、發明說明u)) 如，圖15之聚光透鏡845等，藉由將纖維束所產生之光聚 光於非線形光學結晶，而可有效地使纖維光增幅器之輸出 光射入。 又，以圖17說明本發明之結合部之另一實施例。在圖 17，由複數之纖維光增幅器的射出端所形成束狀之纖維束 輸出端901以射出基本波，於每一纖維光增幅器配置透鏡 902，藉由透鏡902將基本波聚光於第1段之波長變換部（ 非線形光學結晶）903 (例如，在第4實施形態（圖11)之 502、507、518、533等）^在本實施形態，其係說明將纖 維束全部之直徑設爲2 mm，構成纖維束之各纖維光增幅器 的模式徑設爲20/im，藉由個別的透鏡902而聚光於第1 段之波長變換部930之例。又，在第1段之波長變換部903 與第2段之波長變換部906之間配置一對透鏡904、905， 由波長變換部903所射出之光係以與射入波長變換部903 相同條件而射入波長變換部906。 經濟部智慧財產局員工消费合作社印製 (請先閱讀背面之注意事項再填寫本頁) I IP BB t— _ 在此實施形態，爲獲得在非線形光學結晶之各光束徑 最佳之高調波變換效率的大小，而選擇聚光透鏡902之倍 率（在本實施形態，例如10倍程度）。由於以個別的透鏡 902將各纖維輸出聚光，因此，由在纖維中之所有纖維所 聚光之非線形光學結晶中全光束所占之大小（截面積）， 其不依聚光透鏡之倍率而形成纖維束本身之直徑程度。因 此，所需之波長變換部結晶的大小（截面），由於形成纖 維束之直徑程度’因此，使用數毫米角程度的小波長變換 結晶而降低成本。其可取代設置透鏡9〇2，而直接將纖維 66 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公；g ) 經濟部智慧財產局員工消費合作社印s衣 46 95 0 1 A7 B7 五、發明說明（叫） 束輸出端面加工爲球面或非球面的透鏡狀，使其具有聚光 光學元件之功能。 其次，以圖18說明在光增幅器與波長變換部之結合部 ，其纖維輸出端之另一實施例。圖18(a)及(c)所示之實施例 ，使圖17所示之聚光透鏡902形成於每一纖維452之輸出 端部，及將其整合爲每一輸出群之束狀之例。在本例，在 每一纖維其輸出端部所形成之聚光光學元件453，此係已 使用圖10(a)說明設於纖維輸出端部之窗部件433加工爲透 鏡狀，使其具有聚光光學元件之功能。依此構成，可具有 與圖17同樣之聚光功能，並可抑制纖維輸出端面之損傷。 又，圖18(b)係表示在將複數之纖維462形成束狀之每 —輸出群設置聚光光學元件463之場合的實施例。在本例 中，將如圖15所示之聚光透鏡845形成於纖維束之輸出端 部，已用圖10(b)所說明之窗部件443加工爲球面或非球面 之透鏡狀，使其具有聚光光學元件之功能。 又，可取代將纖維端部或窗部件的輸出面加工爲球面 或非球面之透鏡形狀，而使用熱離子交換法或電解離子交 換法等之離子交換法而使纖維端部或在使用玻璃窗作爲窗 部件時將玻璃窗端部之玻璃組成，藉由離子交換使其產生 部份變化，依此而使其具有與透鏡相等之曲折率分布，因 而具有聚光光學元件之功能。又，在圖18(a)〜（c)，在纖維 內之芯部451、461之徑雖未擴大，其亦可倂用此芯徑的擴 大。 在第2段以後之波長變換部（非線形光學結晶）之聚 67 本紙張尺度適用中國國家標準（CNS)A4規恪（210 x 297公釐） -11 — — — — — —— — —— »^'— —-----^訂· — (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 46 95 ϋ 1 五、發明說明（G) 光係與第1段之場合同樣地，在每一纖維或每一光束其輸 出藉由個別的透鏡來進行，在本實施例，其係說明將纖維 束之全輸出以共通之一組或1個透鏡而聚光之場合。依此 ，藉由使用共通之透鏡，而減少所使用之透鏡數，透鏡之 排列容易，因此可降低成本。 又，波長變換結晶（非線形光學結晶）之輸出端係定 位於以波長變換結晶所聚光之光束的光路長中，因此，由 波長變換結晶所射出之光束形成與波長變換結晶之輸出端 大致爲平行光。在本實施例（圖17)，其係說明藉由一對 透鏡904、905將射出光束聚光於波長變換結晶906之場合 。此處，透鏡對之焦點距離，可藉由在第2段之波長變換 部906用以獲得最佳之變換效率而形成所欲之光束徑之倍 率而決定。又，在圖11、13、14所示之波長變換結晶，將 基本波或其高調波聚光之聚光光學元件（例如，圖11(a)所 示之505、506等）係以1個透鏡所構成，其亦可如本實施 例之以1組之透鏡所構成。 如此，藉由第1〜3實施形態其中之一所示之構成而構 成基本波產生部（雷射光產生部及光增幅器），第4〜7實 施形態其中之一所示之構成而構成波長變換部，及第8實 施形態所示之構成而構成光增幅器與波長變換部之結合部 ，可獲得輸出波長157nm或193nm等之紫外線輸出。這些 係分別與h雷射、ArF準分子雷射之振盪波長相同。 又’依此所獲得之紫外線輸出，在例如使用第1實施 形態之基本波產生部而構成之場合，由於以約3ns之間隔 68 <請先閱讀背面之注意事項再填寫本頁)-f B— —L I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 46 95 0 1 A7 B7 V. The structure between the description of invention (J) and 526 is not limited to the one shown in Figure 11 (c). Similarly, the configuration between the wavelength conversion unit 526 in the third stage and the wavelength conversion unit 532 in the fourth stage is the same. Figure 11 (d) shows the basic wave (wavelength l_544 # m)-2 times wave (wavelength 772nm)-3 times wave (wavelength 515nm)-4 times wave (wavelength 386nm)-7 times wave (wavelength 221nm)-8 When the order of wavelength doubling (wavelength 193nm) is used for wavelength conversion. In the wavelength conversion section 533 of the first stage, an LBO crystal is used as the wavelength conversion crystal. In order to convert the fundamental wave to a doubled wavelength, the LB crystal system uses NCPM. In the wavelength conversion section, the fundamental wave transmitted without wavelength conversion and the doubled wave generated by wavelength conversion are respectively delayed by a half-wavelength and one wavelength by the wavelength plate 534, and only the polarization direction of the fundamental wave is rotated by 90 degrees. The wavelength conversion unit 536 in the second stage uses LBO as a wavelength conversion crystal, and the LBO crystal system uses an NCPM with a temperature different from that of the wavelength conversion unit (LBO crystal) 533 in the first stage. Here, the wavelength conversion unit 536 generates a 3x wave (wavelength 515nm) by generating and frequency-generating the double wave generated by the wavelength conversion unit 533 in the first stage and the fundamental wave that has not been wavelength-converted and transmitted through the wavelength conversion unit 533. ). The 3rd wave obtained at the wavelength conversion section 536 and the fundamental wave and the 2nd wave transmitted through the wavelength conversion section 536 without wavelength conversion are separated by a dichroic mirror 537, and the 3rd wave reflected here The condenser lens 540 and the dichroic mirror 543 enter the wavelength conversion unit 545 in the fourth stage. On the other hand, the fundamental wave and the double wave that have passed through the dichroic mirror 537 pass through the condenser lens 538 and enter the wavelength conversion unit 539 »51 -I --------- j-! --Order * ΊΙ!-1 · Line- '(Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) A7 469501 B7 V. Description of the invention (4) The wavelength conversion unit 539 in the third stage uses LBO crystals as wavelength conversion crystals, and the fundamental waves pass through the LBO crystals without wavelength conversion. At the same time, double-waves in the LBO crystals generate 2 high-frequency waves. Transformed into 4x wave (wavelength 386nm) □ The 4x wave obtained in the wavelength conversion section 539 and the fundamental wave transmitted through the wavelength conversion section 539 are separated by a dichroic mirror 541, and the fundamental wave transmitted here passes through The condenser lens 564 is also reflected by the dichroic mirror 546 and enters the wavelength conversion section 548 in the fifth stage. On the other hand, the 4x wave reflected by the dichroic mirror 541 passes through the condenser lens 542 and reaches the dichroic mirror 543, where it is coaxial with the 3x wave reflected by the dichroic mirror 537. They are combined and emitted to the wavelength conversion unit 545 of the fourth stage. The fourth wavelength conversion section 544 uses a BBO crystal as a wavelength conversion crystal, and generates a 7-fold wave (wavelength 221 nm) by generating and frequency of a 3-fold wave and a 4-fold wave. The 7x wave obtained in the wavelength conversion section 545 passes through the condenser lens 547, and is coaxially combined with the basic wave transmitted through the dichroic mirror 541 through the dichroic mirror 546, and then enters the wavelength conversion of the fifth stage. Department 548. The wavelength conversion section 548 of the fifth stage uses an LBO crystal as a wavelength conversion crystal, and generates and oscillates an 8-fold wave (wavelength 193 nm) by generating and frequency of a fundamental wave and a 7-fold wave. With the above configuration, a CLBO crystal can be used instead of the BBO crystal 545 for 7-fold wave generation and the LBO crystal 548 for 8-fold wave generation. In the wavelength conversion section 545 in the fourth embodiment of this embodiment, the 3x wave and the 4x wave are incident through different optical paths, so that the 3x wave can be condensed 52 ---- Hi! --- --- ^-------- Order -------- Line J (Please read the notes on the back before filling out this page) Printed on paper scales for employees' cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs China National Standard (CNS) Al Specification (210 x 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 46 95 0 彳 A7 B7 V. Lens 540 of the invention (p) and a lens 542 that focuses 4x light They are set on different light paths. The cross-sectional shape of the 4-fold wave generated by the wavelength conversion section 539 in the third stage is formed into an elliptical shape by shifting the appearance. Therefore, in order to obtain a good conversion efficiency in the wavelength conversion section 545 in the fourth stage, it is preferable to perform beam shaping at 4 times. In this embodiment, since the condenser lenses 540 and 542 are disposed on different optical paths, for example, a cylindrical lens can be used as the lens 542, and therefore, beam shaping at 4 times can be easily performed. Therefore, it is possible to perform superimposition of the 3x wave in the wavelength conversion section (BBO crystal) 545 of the fourth stage, and the conversion efficiency can be improved. Furthermore, in this embodiment, the lens 544 for focusing the fundamental wave and the lens 547 for focusing the 7x wave can be placed on different optical paths, respectively, which are incident on the wavelength conversion section 548 of the fifth stage. The 7-fold wave generated by the wavelength conversion section 545 in the fourth stage-its cross-sectional shape is formed into an elliptical shape by an offset phenomenon. Therefore, in order to obtain a good conversion efficiency in the wavelength conversion section 548 in the fifth stage, it is preferable to perform beam shaping of 7 times. In this embodiment, since the condenser lenses 544 and 547 can be provided on different optical paths, for example, a cylindrical lens can be used as the lens 547, and beam shaping at 7 times can be easily performed. Therefore, the fundamental waves of the wavelength conversion section (LBO crystal) 548 in the fifth stage can be superposed well, and the conversion efficiency can be improved. The configuration between the wavelength conversion unit 536 in the second stage and the wavelength conversion unit 545 in the fourth stage is not limited to FIG. 11 (d), and it may be generated by the wavelength conversion unit 536 and reflected in dichroic colors. The 3x wave reflected by the mirror 537, and the 4x wave generated by the wavelength conversion section 536 and transmitted through the dichroic mirror 537 and obtained by the wavelength conversion by the wavelength conversion section 539, are incident on 53 paper scales. Bypass Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------ JLJ ------- 1 Order ----------- (Please read the precautions on the back before filling this page) A7 46 95 0 1 ________B7_ V. Description of the invention (y) Wavelength conversion unit 545 'If the two optical paths between the two wavelength conversion units 536, 545 are equal, Either configuration is acceptable. This is the same between the wavelength conversion unit 539 in the third stage and the wavelength conversion unit 548 in the fifth stage. Figs. 12 (a) to (d) show the wavelength conversion efficiency in each segment of each channel obtained from the experimental results of the wavelength conversion section shown in Figs. 11 to ⑹ and the average output of the .8-fold wave (wavelength 193nm). "The output of the fundamental wave is as described in the previous embodiment. At the output end of each channel, the maximum power is 20kW, the pulse amplitude is Ins, the pulse frequency is 100KΗζ, and the average output is 2W. As a result, the average output of 8 times the wave (wavelength I93nm) in each channel is 229 mW in the wavelength conversion section of FIG. 11 (a), 38.3 mW in the wavelength conversion section of FIG. 11 (b), and FIG. 11 (c). The wavelength conversion unit is 40.3 mW, and the wavelength conversion unit of FIG. 11 (d) is 45.9 mW. Therefore, the average output of the beams combined from all 128 channels is 29W in Figure 11 (a), 4.9W in Figure 11 (b), 5.2W in Figure 11 (c), and _ 'in Figure 11 (d) 5.9W, called the Renyi Wavelength Conversion Unit, can provide ultraviolet light with a sufficient output of 193nm as the light source for the exposure device. Among these embodiments, the structure of Fig. 11 (a) is the simplest and the conversion efficiency is the highest. Therefore, the number of channels of the fiber optical amplifier can be reduced compared to the first and second embodiments (128 channels). For example, the number of channels can be provided by 1/2 to 1/3 to form a light beam. The ultraviolet light having a wavelength of 193 nm, which is a sufficient output required for a light source for an exposure device, is constituted by a fundamental wave output having a lower fundamental wave output as described in the example. In the structure of FIG. 11 (d), the number of wavelength conversion sections is five. Although it is the largest of these embodiments, the conversion efficiency at 193 nm is about the same as that of FIG. 11 (b) and ⑷. Same UV output. Also, at 54 ------------- f -'----- II Order ----- II--J (Please read the notes on the back before filling this page) Wisdom of the Ministry of Economy The paper size printed by the Consumer Cooperatives of the Property Bureau applies the standard of China National Standards (CNS) A4 (210 X 297 mm). The consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs is printed by 4 6 9 5 0 1 a7 ___B7___ V. Description of the invention (9) The structure of Figures 11 (b) and (c) uses BB0 crystals because 8 times wave (193nm) is generated, and BBO crystal damage may occur due to absorption by S times wave (193nm) of BBO crystal. Problem. In this regard, in the structure shown in FIG. 11 (d), LBO crystals can be used to generate an 8-fold wave (193 nm). This LBO crystal is currently easily available in the market, and because its absorption coefficient of ultraviolet light at 193nm is very small, it will not cause the problem of light damage to the crystal, which is conducive to its durability. Also, 8 times the wave (such as the wavelength Although the generation unit of 193nm) uses LB0 crystals for angular phase integration, the phase integration angle is large, so the effective non-linear optical constant (deff) is reduced. Here, it is preferable that a temperature control mechanism is provided for the LB0 crystal, and the LBO crystal is used at a high temperature. According to this, the phase integration angle can be made small, that is, the above-mentioned constant (deff) is increased, and the 8-fold wave generation efficiency β can be improved. Also, although the above has explained the preferred configuration example of the wavelength conversion unit that generates 8-fold waves from the fundamental wave The embodiment, but the wavelength conversion unit of the present invention is not limited to this embodiment, and if it can generate an 8-fold wave with a fundamental wave of 1.544 # m, the same effect can be obtained. For example, according to the fundamental wave (wavelength 1.544 / zm) — 2 times (wavelength 772nm) — 3 times (wavelength 515nm) — * 4 times (wavelength 386nm) — 6 times (wavelength 257nm) -7 times (wavelength 221nm) — 8 times (wavelength i93nm) the order of wavelength conversion can also achieve the same effect. In this case, 'as a non-linear optical crystal used for wavelength conversion, for example,' a LBO crystal is used as a conversion crystal from a fundamental wave to a 2x wave, and a lb〇 crystal is used as a conversion crystal from a 2x wave to a 4x wave. Double wave and 4 55 This paper size is applicable to China Standard (CNS) A'l gauge (21〇X 297 mm) (Please read the legal notice on the back before filling this page) ------ 丨—Order--. -Nn II n II ϋ ϋ nn 1 B7 d695〇1 V. Description of the invention (4) 6 times wave is generated by the sum of the frequency of the double wave. BBO crystal is used. The frequency of the sum of the basic wave and the 6 times wave is used. The 7-fold wave is generated using BBO crystal, and the 8-fold wave is generated using LBO crystal by the sum frequency of the fundamental wave and the 7-fold wave. In this case, since the LBO crystal can be used to generate an 8-fold wave, the problem of crystal damage is not caused. With the configuration of the wavelength conversion section described in the fourth embodiment, the fundamental wave having a wavelength of 1.544 μm generated by the fundamental wave generating section can be converted into a wavelength of ultraviolet light having a wavelength of 193 nm. Next, another configuration example of the wavelength conversion section of the present invention will be described with reference to Fig. 13 as a fifth embodiment. This is a fundamental wave with a wavelength of 1.57 // m emitted from the output end 601 of the fiber bundle (equivalent to 114 in the first embodiment, 29 in the second embodiment, etc.). It uses a non-linear optical crystal to generate a 10-fold wave. An example of a high-profile wave 'that generates ultraviolet light at 157 nm with the same wavelength as a thorium laser. The fundamental wave output unit in this embodiment can be used in combination with one of the first to third embodiments or in combination. In the configuration example of the wavelength conversion unit shown in FIG. 13, the fundamental wave (wavelength 1.57 / zm)-2 times wave (wavelength 785nm)-4 times wave (wavelength 392_5nm)-8 times wave (wavelength 196.25nm)-10 times When the wavelength (wavelength 157nm) is sequentially converted. In this embodiment, from the wavelength conversion sections from the generation of the 2 × wave to the generation of the 8 × wave, the generation of the second high-frequency wave of the wavelength incident to each wavelength conversion section is performed. In this example, the non-linear optical crystal used in the wavelength conversion is a LBO crystal used in the wavelength conversion unit 602 to generate a 2x wave with a fundamental wave to generate a second-order high-order wave, and the wavelength conversion unit 604 borrows Doubled by 56 This paper size applies the Chinese National Standard (CNS) A4 (210x 297 mm) ------------- J.,-_I ------- ^ --------- Line J (Please read the notes on the back before filling out this page) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 9 5 0 1 Α7 Β7 V. Description of Invention (%) (Please read the notes on the back before filling this page.) The 4 times wave generation of 2 times high-frequency waves is generated using LBO crystals. Furthermore, in the wavelength conversion section 609, the generation of the 8th wave generated by the 4x wave to generate the second high-order wave is performed using SnBe2B2Ch (SBBO) crystals. The 10-fold wave (wavelength 157 nm) was generated using SBBO crystals. The double wave generated by the wavelength conversion unit 602 passes through the condenser lens 603 and enters the wavelength conversion unit 604. This wavelength conversion unit 604 generates the aforementioned 4 times wave and the 2 times wave that has not been wavelength-converted. Next, the doubled wave transmitted through the dichroic mirror 605 passes through the condenser lens 606, is simultaneously reflected by the dichroic mirror 607, and enters the wavelength conversion section 611. On the other hand, the 4 times wave reflected by the dichroic mirror 605 passes through the condenser lens 608 and enters the wavelength conversion unit 609. The 8 times wave generated here passes through the condenser lens 610 and the dichroic mirror 607 and The incident wavelength conversion section 611. Further, the wavelength conversion section 611 generates a 10-fold wave (wavelength 157 nm) by generating a frequency of the sum of 2 times and 8 times the wave that is coaxially combined with the dichroic mirror 607. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. However, in this embodiment, the dichroic mirror 605 diverges the 2x and 4x waves generated by the wavelength conversion section 604 in the second stage, so that The second wave and the eighth wave obtained by wavelength conversion by the wavelength conversion unit 609 and wavelength conversion by the wavelength conversion unit 609 are made to enter the wavelength conversion unit 611 of the fourth stage through a different optical path. The dichroic mirrors 605 and 607 are used, and the four wavelength conversion sections 602, 604, 609, and 611 are arranged on the same optical axis. However, in this embodiment, the cross-sectional shape of the 4-fold wave generated by the wavelength conversion section 604 in the second stage becomes elliptical due to the shift phenomenon. Therefore, 57 paper sizes are in accordance with the Chinese National Standard (CNS) A4 (210 X 297 mm) printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 469501 V. Description of Invention (π) The segment wavelength conversion unit 611 obtains good conversion efficiency, and it is preferable to shape the beam shape of the 4 times wave that is incident on the light beam so that the overlap of the 2 times wave is performed well. In this embodiment, since the condenser lenses 606 and 608 can be respectively disposed on different optical paths, for example, a cylindrical lens can be used as the lens 608, and beam shaping at 4 times can be easily performed. Therefore, it is possible to perform superimposition of the double wave in the wavelength conversion section 611 in the fourth stage, and improve the conversion efficiency. According to the configuration of the wavelength conversion unit of the fifth embodiment described above, a fundamental wave having a wavelength of 1.57 # m generated by the fundamental wave generating unit can be converted into ultraviolet rays having a wavelength of 157 nm. Fig. 14 shows a sixth embodiment of another configuration example of the wavelength conversion section of the present invention. As described in the second embodiment, this is a fundamental wave generating section, and the fundamental wave with a wavelength of 1.099 / zm emitted from the fiber output end 701 (equivalent to 114 of the first embodiment, 29 of the second embodiment, etc.) is emitted. A configuration example using a non-linear optical crystal to generate a 7-fold high-frequency wave and generate ultraviolet light with the same wavelength of 157 nm as an F2 laser. The fundamental wave output section of this embodiment can be used in combination with any of the first to third embodiments described above. The configuration example of the wavelength conversion unit shown in FIG. 14 shows the basic wave (wavelength l_099 / m)-2 times wave (wavelength 549.5nm)-3 times wave (wavelength 363.3nm)-4 times wave (wavelength 274.8 nm) — 7 times wave (wavelength 157nm) in the order of wavelength conversion. In this embodiment, the second-order high-frequency wave generation and the generation frequency of the incident light are performed in each wavelength conversion section. In this example, as a non-linear optical crystal used for wavelength conversion, at 58 • ------------- i \ --------- ------- line I (Please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 specification (2) 0 × 297 mm) A7 469501 __B7___ 5. Description of the invention (4) Wavelength conversion section 702 The LBO crystal is used for generation of a 2x wave generated by the fundamental wave to generate a second high-order wave, and the LBO crystal is used for the generation of a 3x wave generated by the sum of the frequency of the fundamental wave and the 2x wave in the wavelength conversion section 705. Furthermore, in the wavelength conversion section 710, a BBO crystal is used for the generation of 4 times the second harmonic wave by using the 2 times wave, and in the wavelength conversion section 712, the sum frequency of the 3 times wave and the 4 times wave is 7 times. The generation of waves uses SBBO crystals. In addition, the fundamental wave and the double wave generated by the wavelength conversion unit (LBO crystal) 702 are incident on the 1/2 wavelength plate 703, and only the polarization direction of the fundamental wave is rotated by 90 degrees, and the wavelength is incident through the condenser lens 704 Conversion section (LBO crystal) 705. The wavelength conversion unit 705 generates a 3x wave by generating a sum frequency of the fundamental wave and the 2x wave, and transmits the 2x wave without wavelength conversion. The 2x and 3x waves generated by the wavelength conversion section 705 are diverged by the dichroic mirror 706, and the 3x waves transmitted here pass through the condenser lens 707 and are reflected by the dichroic mirror 708 to enter the wavelength Conversion unit 712. On the other hand, the 2x wave reflected by the dichroic mirror 706 passes through the condenser lens 709 and enters the wavelength conversion unit 710. This wavelength conversion unit 710 generates a 2x high-frequency wave by the 2x wave and generates a 4x wave. . This 4-fold wave passes through the condenser lens 711 and the dichroic mirror 708 and enters the wavelength conversion section 712. This wavelength conversion unit 712 generates a 7-fold wave by the sum of the frequency of the 3-fold wave and the 4-fold wave. However, in this embodiment, although the 2x wave and 3x wave generated by the wavelength conversion section 705 in the second stage are divided by the dichroic mirror 706, the 3x wave transmitted here and the wavelength conversion section are divided. 710 The 4x wave obtained by converting the 2x wave into a wavelength is transmitted through a different optical path and entered into the wavelength conversion section 712 of the fourth stage. However, it is not necessary to use a dichroic mirror. 706 59 Paper size Applicable national standard (CNS) A4 specification (210x 297 mm) ------------ ^ ^ -------- r Order J ------- line J (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Ministry of Economic Affairs Intellectual Property Bureau Printed by the Consumer Cooperatives of the Ministry of Economic Affairs 4 6 9 5 A7 B7 The four wavelength conversion sections 702, 705, 710, and 712 are arranged on the same optical axis. However, in this embodiment, the cross-sectional shape of the 4-fold wave generated by the wavelength conversion section 710 in the third stage is formed into an elliptical shape by the shift phenomenon. Therefore, in order to obtain a good conversion efficiency in the wavelength conversion section 712 of the fourth stage where this light beam is used as an input, it is preferable to shape the beam shape as the 4th wave of the incident beam and superimpose the 3rd wave. . In this embodiment, since the condenser lenses 707 and 711 are respectively arranged on different optical paths, for example, a cylindrical lens can be used as the lens 711, and the beam shaping at 4 times can be easily performed. Therefore, it is possible to obtain a good superposition of the triple wave in the wavelength conversion section in the fourth stage, and improve the conversion efficiency. With the configuration of the wavelength conversion section described in the sixth embodiment above, the fundamental wave having a wavelength of 1.099 # m generated in the fundamental wave generating section can be converted into ultraviolet rays having a wavelength of i57 nm. Next, Fig. 5 shows a seventh embodiment of another configuration example of the optical amplifier and the wavelength conversion section of the present invention. FIG. 15 shows the configuration of a parallel optical path with a plurality of wavelength conversion sections (the example is a square configuration with 4 optical paths). In conjunction with this, the output ends of most fiber optical amplifiers 19 and 25 are divided into 4 beams (output Group), corresponding to the embodiment where the four fiber bundle output ends are respectively provided with a condensing optical element and a wavelength conversion section. In this example, since it is assumed that the optical amplifier shown in FIG. 1 or FIG. 2 is used, 32 fiber optical amplifiers 19 and 25 are bundled in one fiber bundle. Also, although the beam can be formed using the original EDFA output end or ydfa output end, it can also be combined with the non-doped 60 in the final EDFA, etc. This paper size applies the Chinese National Standard (CNS) A4 specification < 210 X 297 mm) (Please read the precautions on the back before filling out this page) -------- Order --------- line. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs System 469501 A7 ___B7_____ 5. Description of the invention (#) The fiber forms a light beam at its output end. When the output ends of the fiber optical amplifiers 19 and 25 are plurally divided to form a plurality of fiber bundles, in most (128 in this example) fiber optical amplifiers 19 and 25, laser light is used. It is preferable that the emission sequence is adjacent to the output end (fiber optical amplifier) to form fiber bundles different from each other. For example, in the order of the laser light emitted, the 128 fiber optical amplifiers (19 and 25) are attached with the numbers 0 to 127, and the 124th fiber optical amplifiers are used as the first. 1 fiber bundle, the first, 5, 9, ..., 125 fiber optical amplifiers are used as the second fiber bundle, and the 3, 6, 10, ... 126 fiber optical amplifiers are used as the third fiber bundle. The fourth, seventh, eleventh, ... 127th fiber optical amplifiers are used as the fourth fiber bundle. According to this, the time interval of the pulsed light that enters the wavelength conversion section (non-linear optical crystal) arranged corresponding to each fiber bundle can be divided equally. As shown in FIG. 15, the fundamental wave emitted from the output end 841 of the optical amplifier (Fig. 1 or Fig. 2) formed by the four fiber bundles is respectively divided into three wavelength conversion sections 842, 843, and 844 wavelength conversion. Also, in this example, although any one of the wavelength conversion sections (FIGS. 11, 13, and 14) described in the fourth to sixth embodiments may be used, here, the wavelength conversion section shown in FIG. 11 (a) is used, that is, An example in which the fundamental wave is converted into ultraviolet light having a wavelength of 193 nm by a three-stage non-linear optical crystal (502 to 504). Therefore, the basic wave of 'wavelength 1.544 / im (frequency number ω) is transmitted through the non-linear optical crystal from left to right in the figure, and the wavelength conversion is performed in the order of 2 times, 4 times, and 8 times (wavelength 193mn) and output . In Figure 15, the output end of the optical amplifier formed by 4 fiber bundles ------------------------ Order ------ --- Line JI (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 469501 A7 B7 V. Description of Invention (4) 841 The basic wave (wavelength 1.544 " m) is incident on the wavelength conversion section 842 (non-linear optical crystal) through a condenser lens 845 provided for each of the four fiber bundles. Here, it is generated by generating 2 high-order waves The frequency of the fundamental wave is twice the frequency ω, that is, twice the frequency of 2ω (wavelength 772 nm). The doubled wave generated by the wavelength conversion section 842 advances to the right, passes through the condenser lens 846, and enters the next wavelength conversion section 843 (non-linear optical crystal). Here, generation of the second-order high-frequency wave is performed again to generate 2 times the frequency 2ω of the incident wave (2 times the wave), that is, 4 times the frequency 4ω (wavelength 386 nm) of 4 times the fundamental wave. The 4x wave generated by the wavelength conversion section 843 passes through the condenser lens 847 and then enters the right wavelength conversion section 844 (non-linear optical crystal). Here, the generation of the second-order high-frequency wave is performed again to generate an incident wave ( 4 times the frequency) 2 times of the frequency 4ω, that is, 8 times the frequency 8ω (wavelength 193 nm) which is 8 times the fundamental wave. In this embodiment, as the non-linear optical crystal used in the aforementioned wavelength conversion section, for example, in the wavelength conversion section 842, an LBO crystal is used for the wavelength conversion crystal in which the fundamental wave is changed to a double wave, and in the wavelength conversion section 843, the wavelength conversion section The wavelength-converted crystal that changes the octave to 4 times wave uses a BBO crystal, and the wavelength-converted crystal that changes from the 4th to 8th wave in the wavelength conversion section 844 uses SBB. Moreover, in this embodiment, the case where the wavelength conversion is performed in the order of the fundamental wave (wavelength 1.544 / zm)-2 times wave (wavelength 772nm)-4 times wave (wavelength 386nm)-8 times wave (wavelength 193nm) has been described. \ This corresponds to the one obtained by parallelizing the wavelength conversion unit of FIG. 11 (a) in the fourth embodiment with a plural number. Therefore, you can copy the figure 11 (a) 62 of the other wavelength conversion sections mentioned above (please read the precautions on the back before filling this page) r Order ·? ---------- Line. Intellectual Property Bureau of the Ministry of Economic Affairs Printed by employee consumer cooperatives The paper size applies to Chinese national standards (210x297g *) Printed by the employee consumer cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ 6 95 0 t 5. Description of the invention (π) ~ (d), in accordance with this embodiment The same method can be used to form a plurality of parallel connections. Similarly, a configuration in which the wavelength conversion sections shown in Figs. 13 and 14 are parallelized in a plural number may be used. Next, a combination of the optical amplifier and the wavelength conversion unit will be described with reference to FIG. 16 in the second embodiment of this embodiment. In this embodiment, the configuration of the wavelength conversion section shown in Fig. 15 is a parallel configuration of five optical paths, and the output end of the fiber optical amplifier is divided into five to form five fiber bundles (output groups). This segmentation does not equally divide the output end of the fiber optical amplifier into 5 equal parts. The output end 850 of a part of the 5 fiber bundles (output group) (1 fiber bundle in Figure 15) is separated or A small number of fiber optical amplifiers are formed, and the output ends 851 of the other (4 in FIG. 15) fiber bundles are formed to have the same number of fiber optical amplifiers, and a plurality of fiber optical amplifiers that are evenly divided are formed. Beam. Next, these output lights are converted into ultraviolet rays of a predetermined wavelength by the wavelength conversion units 852 to 857 provided in each output group (fiber bundle), and are provided to, for example, an exposure device. The three-stage wavelength conversion sections 852 to 854 are composed of wavelength conversion sections each having the same number as the plural (five) fiber bundles, and are respectively arranged on the light-concentrating optical elements on the incident side of the wavelength conversion sections 852 to 854. 855 ~ 857 are also composed of the same number of condenser lenses as the fiber bundle. Here, when the ultraviolet laser device of this example is applied to an exposure device (Fig. 19 or 20), the fundamental waves generated by the output ends 851 of the four fiber bundles are respectively converted into wavelengths by a wavelength conversion section (852 ~ 857). Transformed into ultraviolet rays' This ultraviolet rays are irradiated to a grating as illumination light for exposure through an illumination optical system. That is, four fiber bundles are used as the light source for exposure. On the other hand, from the 63 paper size, the Chinese standard (CNS) A4 (210 x 297 cm) is applicable. -------------- ^ ^ ------- -^ 定 -J -------- Line J (Please read the notes on the back before filling this page) Printed by the Shellfish Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy The output light generated by the output end 850 of the fiber bundle formed by the fiber optical amplifier and converted into ultraviolet rays is guided by a calibration system or a monitoring system provided in the exposure device. That is, one fiber bundle (850) is used as a light source for calibration and the like. The wavelength conversion to ultraviolet rays generated by the fiber bundle 850 is transmitted to a calibration system or the like by an undoped fiber combined with the wavelength conversion unit 854 in the third stage, for example. However, in FIG. 16, the fundamental waves generated by the output ends of the four fiber bundles are converted into ultraviolet rays and guided to the illumination optical system, and the fiber bundles may be one or plural. The number of fiber bundles used for calibration and monitoring is one. However, the number of fiber bundles may be plural, and the light emitted from the plurality of fiber bundles can be guided to different optical systems, respectively. In this example, the light source for exposure and the light source used for calibration, monitoring, etc. are the same, and the output light of a single-wavelength oscillating laser is the same as the exposure light and calibration light. The conversion can use ultraviolet rays of the same wavelength. Therefore, calibration or monitoring can be performed through optical systems such as the illumination optical system and the projection optical system of the exposure device. Therefore, it is possible to easily design an optical system for calibration, greatly simplify the configuration ', or to configure the exposure device without any additional installation. In addition, since the irradiation of exposure illumination light and the irradiation of calibration illumination light and the like need not be performed at the same time, 'for example, a shutter is installed in the illumination light path, or a channel that separates pulse light by TDM 23 is preferred. The timing of irradiation is controlled independently. Furthermore, 'the aforementioned ultraviolet rays for calibration or monitoring can be used to measure 64 ------------, 1 ^ -------- ,. order -------- -Line Ji. (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 (2) 0 X 297 mm) A7 46 95 0 1 _______B7____ V. Description of the invention (c ) The focus position, projection magnification, difference, and distance of the projection optical system can improve its measurement accuracy. In the case of focusing the imaging surface of the projection optical system and the photosensitive substrate (wafer), the same wavelength as the exposure wavelength can also be used, and focusing can be achieved by the projection optical system, which can also improve the accuracy of its position alignment. ;. However, according to the configuration of the present embodiment (FIGS. 15 and 16) described above, since the fiber output of the fiber optical amplifier is divided into a plurality of groups, and the input light of the non-linear optical crystal is divided, it is effective. To reduce the incident power of non-linear optical crystals. Therefore, it can solve the problems of light absorption, low output caused by thermal effects, and light damage in non-linear optical crystals. In addition, the number of divisions (the number of fiber bundles) at the output end of the fiber optical amplifier is not limited to four or five, and may be two or more. Next, a coupling portion of the optical amplifier and the wavelength conversion portion of the ultraviolet generating device of the present invention will be described as an eighth embodiment. Here, the output end of the optical amplifier is as described in the first and second embodiments, and the output end of the fiber optical amplifier is formed into a bundle. At this time, since the cladding diameter of each fiber optical amplifier is about 12 / zm, it is possible to make the bundle diameter of the bundle-shaped output end of 128 bundles less than about 2 mm. Here, the number and shape of the beams can be determined according to the configuration of the wavelength conversion section and the shape of the desired light source. For example, in the case of a beam having a circular cross section as shown in the first and second embodiments ( 114, 29, 501, 601, 701, etc.). At this time, when the output end portion of the fiber optical amplifier is formed as shown in FIG. 9 or FIG. 10, it is provided between the output end of the fiber bundle and the wavelength conversion portion (non-linear optical crystal) in the first stage. Condensing lens (example 65___) This paper size applies to China National Standard (CNS) A4 < 210 x 297 mm) ------------ 1 -------- ^ Order J ------- line i (Please read the note f on the back first Fill out this page again) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 9 5 0 1 a? B7 V. Description of the invention u)) For example, the condenser lens 845 shown in Fig. 15 The light is condensed in the non-linear optical crystal, and the output light of the fiber optical amplifier can be effectively incident. Furthermore, another embodiment of the joint portion of the present invention will be described with reference to FIG. 17. In FIG. 17, a bundle-shaped fiber bundle output end 901 formed by the output end of a plurality of fiber optical amplifiers emits a fundamental wave, and a lens 902 is arranged in each fiber optical amplifier, and the basic wave is condensed by the lens 902. The first wavelength conversion section (non-linear optical crystal) 903 (for example, 502, 507, 518, 533, etc. in the fourth embodiment (FIG. 11)) ^ In this embodiment, the entire diameter of the fiber bundle is explained It is set to 2 mm, and the mode diameter of each fiber optical amplifier which constitutes a fiber bundle is set to 20 / im, and it collects in the 1st stage wavelength conversion part 930 by the individual lens 902. A pair of lenses 904 and 905 are arranged between the wavelength conversion unit 903 in the first stage and the wavelength conversion unit 906 in the second stage, and the light emitted by the wavelength conversion unit 903 has the same conditions as those of the incident wavelength conversion unit 903. Then, it enters the wavelength conversion unit 906. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) I IP BB t— _ In this embodiment, in order to obtain the best high-frequency wave transformation of each beam diameter in the non-linear optical crystal For the size of the efficiency, the magnification of the condenser lens 902 is selected (in this embodiment, for example, about 10 times). Since each fiber is focused by an individual lens 902, the size (cross-sectional area) of the total light beam in the non-linear optical crystal collected by all the fibers in the fiber does not depend on the magnification of the condenser lens The degree of diameter of the fiber bundle itself. Therefore, the size (cross-section) of the crystal of the required wavelength conversion section is formed by the diameter degree of the fiber bundle. Therefore, a small wavelength conversion crystal with an angle of several millimeters is used to reduce the cost. It can replace the setting of the lens 902, and directly apply the fiber 66. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 males; g). The consumer property cooperative staff of the Intellectual Property Bureau of the Ministry of Economic Affairs printed s clothing 46 95 0 1 A7 B7 V. Description of the invention (called) The beam output end surface is processed into a spherical or aspherical lens shape, so that it has the function of condensing optical elements. Next, another embodiment of the fiber output end of the coupling section of the optical amplifier and the wavelength conversion section will be described with reference to FIG. 18. In the embodiment shown in FIGS. 18 (a) and (c), the condenser lens 902 shown in FIG. 17 is formed at the output end portion of each fiber 452 and is integrated into a bundle shape of each output group. . In this example, a focusing optical element 453 formed at the output end portion of each fiber has been processed into a lens shape with a window member 433 provided at the output end portion of the fiber, as shown in FIG. 10 (a). Function of opto-optical components. With this configuration, it is possible to have the same light-concentrating function as in Fig. 17 and to suppress damage to the fiber output end face. Fig. 18 (b) shows an embodiment in which a condensing optical element 463 is provided for each output group in which a plurality of fibers 462 are bundled. In this example, the condenser lens 845 shown in FIG. 15 is formed on the output end of the fiber bundle, and the window member 443 described in FIG. 10 (b) has been processed into a spherical or aspherical lens shape to make it With the function of condensing optical elements. In addition, instead of processing the fiber end portion or the output surface of the window member into a spherical or aspherical lens shape, an ion exchange method such as a thermal ion exchange method or an electrolytic ion exchange method can be used to make the fiber end portion or use a glass window. When it is used as a window component, the glass at the end of the glass window is composed, and a part of it is changed by ion exchange, so that it has a curvature distribution equal to that of the lens, and thus has the function of a condensing optical element. In addition, in Figs. 18 (a) to (c), although the diameters of the core portions 451 and 461 in the fiber are not enlarged, the core diameter may be expanded by this method. Convergence of wavelength conversion section (non-linear optical crystal) after paragraph 2 67 This paper size applies Chinese National Standard (CNS) A4 (210 x 297 mm) -11 — — — — — —— — —— » ^ '— —----- ^ Order · — (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 46 95 ϋ 1 5. Description of the Invention (G) Optical Department and In the case of the first paragraph, the output of each fiber or beam is performed by a separate lens. In this embodiment, it is explained that the entire output of the fiber bundle is shared by a group or a lens. Spotlight. According to this, by using a common lens and reducing the number of lenses used, the arrangement of the lenses is easy, so that the cost can be reduced. In addition, the output end of the wavelength conversion crystal (non-linear optical crystal) is positioned in the optical path length of the light beam condensed by the wavelength conversion crystal. Therefore, the output end of the beam formed by the wavelength conversion crystal and the output end of the wavelength conversion crystal are approximately Parallel light. In this embodiment (Fig. 17), the case where the emitted light beam is focused on the wavelength conversion crystal 906 by a pair of lenses 904 and 905 will be described. Here, the focal distance of the lens pair can be determined by the wavelength conversion section 906 in the second stage to obtain the optimal conversion efficiency to form the desired magnification of the beam diameter. In addition, in the wavelength conversion crystals shown in FIGS. 11, 13, and 14, a focusing optical element (for example, 505, 506, etc. shown in FIG. 11 (a)) that focuses the fundamental wave or its high-frequency wave is grouped into one. The lens may also be constituted by a group of lenses as in this embodiment. In this way, the fundamental wave generating section (laser light generating section and optical amplifier) is configured by the configuration shown in one of the first to third embodiments, and the wavelength is configured by the configuration shown in one of the fourth to seventh embodiments. The conversion section and the structure shown in the eighth embodiment constitute a combination section of the optical amplifier and the wavelength conversion section, and can obtain an ultraviolet output with an output wavelength of 157 nm or 193 nm. These systems have the same oscillation wavelengths as h laser and ArF excimer laser, respectively. In addition, when the ultraviolet output obtained in this way is used, for example, when the fundamental wave generating unit of the first embodiment is used, the interval is about 3 ns. < Please read the notes on the back before filling this page)

』SJI J· ϋ I I I I I I I I ϋ n I ϋ n ϋ I I n I ϋ D 本紙張尺度適用中國國家標準（CNS)A4規格（210*297公釐） A7 B7 46 95 0 五、發明說明（α) 而發光之脈衝光，因此不會造成時間上之重疊’具有極狹 帶域化之單一波長的紫外線，每一輸出光不會彼此干涉。 又，例如使用第2實施形態之基本波產生部而構成之場合 所獲得之紫外線輸出，由於以約78ns之等間隔而發光之脈 衝光，因此不會造成時間上之重疊，具有極狭帶域化之單 一波長的紫外線.，每一輸出光不會彼此干渉。 進而，在例如揭示於特開平8-334803號專利公報之固 體紫外線陣列，對於被並聯化之每一基本波雷射（每一雷 射要素）分別需要波長變換部，依本實施形態，由於基本 波輸出之纖維束直徑全通道合計爲2麵以下，因此僅以1 組之波長變換部即可進行全部通道之波長變換。此外，由 於將波長變換部與單一波長振盪雷射、分束器、時分割光 分歧裝置等之其它構成部分開配置，因此其配置之自由度 極高。因此，依本發明，可提供成本低且緊密之單一波長 的低空間的相干性之紫外線雷射。 其次，說明本發明之紫外線雷射裝置之第9實施彤態 。本實施形態之紫外線雷射裝置，其特徵係使用前述第1 〜8實施形態之紫外線雷射裝置作爲曝光裝置用光源。 以下，參照圖19說明使用本發明之紫外線雷射裝置之 曝光裝置的實施例。在光刻工程所使用之曝光裝置，其原 理係與照片製版相同，將在光罩（光柵）上精密描繪之元 件圖案以光學方式投影於塗布光阻之半導體晶圓或玻璃平 板等之基板上’並將其圖案像轉印於光阻。本發明之紫外 線雷射裝置1261係與包含照明光學系統1262、投影光學系 69 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------.X\--------.訂；---------線α. (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印制衣 46 95 0 1 A7 B7 五、發明說明（q) 統1265等之曝光裝置全體一體設置。此時，可將紫外線雷. 射裝置1261固定於支撐照明光學系統1261之架台，或單 獨地將紫外線雷射裝置固定於架台。但，與紫外線雷射裝 置1261連接之電源等較佳係事先與該架台個別設置。 又，紫外線雷射裝置1261，其係與具有雷射光產生部 及光增幅器之第1部份，以及具有波長變換部之第2部份 分開，第2部份與照明光學系統1262 —體固定於架台，而 將第1部份固定於另一相異之架台。進而，將紫外線雷射 裝置1261全部配置於收納曝光裝置本體之容器內，或將紫 外線雷射裝置1261之一部份例如波長變換部配置於容器內 ，剩餘部份則與容器一體配置於其外側。又，紫外線雷射 裝置1261之控制系統可收納於與容器分別設置之控制機架 ，或將顯示部、開關等與容器一體配置於其外側，剩餘部 份則配置於容器內。 其次，依本發明而狹帶域化且空間的相干性低之紫外 線，藉由照明光學系統1262，在必要之投影面上之照明度 分布形成均一而被放大投影，積體電路之電路圖案被照射 於精密地描繪之石英光罩（石英光柵）1263上。光柵1263 之電路圖案係被投影光學系統1265以所定之縮小倍率（例 如1/4、1/5、1/6等）而縮小，投影於塗布有光阻之半導體 晶圓（例如矽晶圓）1266上，前述電路圖案之縮小像則被 成像、轉印於光阻上。 照明光學系統1262係配置於與光柵1263之圖案面大 致一起作用之面內，並且包含：規定在光柵1263上之照明 70 ------------ Λ ί------I 4 訂·------！線-^ {請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 6 9 5 0 1 a? B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（α) 領域之視野光圖；規定在照明光學系統1262內，與光栅 1263之圖案面大致形成傅立葉轉換關係之所定面上，紫外 線的光量分布之開口光圈：及使自開口光圈射出之紫外線 照射於光柵1263之電容透鏡等。此時，用以變更在所定面 上之紫外線的光量分布，可將彼此之形狀與大小至少一方 相異之複數之開口光圈其中之一設於鏡頭盤，而將順應光 柵1263之圖案而選擇之複數之開口光圏其中之一配置於照 明光學系統1262之光路內。 又，亦可在紫外線雷射裝置1261之波長變換部與視野 光圈之間，配置光學積分儀。在使用蠅眼透鏡（fly eye lens)作爲光學積分儀時，其射出側焦點面可配置爲與光 柵1263之圖案面形成傅立葉轉換關係，而在使用桿式積分 儀作爲光學積分儀時:，其射出面可配置爲與光柵1263之圖 案面形成一起作用》 ^ 又，作爲曝光裝置之曝光開始快門，可使用第1〜3實 施形態所述之電氣光學調變元件或音響光學調變元件（12 、22、32)。使電氣光學調變元件或音響光學調變元件， 自OFF狀態即未產生脈衝（內部損失較大）狀態切換爲 〇N狀態即產生脈衝狀態（脈衝狀而使內部損失變小）狀態 ，而開始曝光D 又’在具有紫外線雷射裝置1261之曝光裝置，可由構 成紫外線雷射裝置1261之單一波長振盪雷射輸出連續光， 或使單一波長振盪雷射作脈衝輸出亦可。特別是後者，可 將單一波長振盪雷射之電流控制與前述之電氣光學調變元 71 ------------i \--------r 訂-----------線J. <請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） 經濟部智慧財產局員工湞費合作社印製 469501 五、發明說明（Μ ) 件或音響光學調變元件之控制倂用，而控制照射於光柵 1263及半導體晶圓1266之紫外線（脈衝光）的輸出間隔、 輸出之開始與停止等。 又，在本實施形態之具有紫外線雷射裝置1261之曝光 裝置，其不必使用機械的快門以控制在晶圓1266上之紫外 線之積算光量，例如，在使紫外線雷射裝置1261之輸出（ 電力、中心波長、波長寬等）安定化而振盪紫外光時，爲 防止因紫外線到達晶圓1266而使光阻感光，可於紫外線雷 射裝置1261與晶圓1266之間的照明光路內配置快門，或 驅動台1267使晶圓1266由紫外線之照射領域退避亦可。 半導體晶圓1266係被載置於具有驅動機構1269之台 1267上，當一次曝光結束時，藉由移動台而使電路圖案轉 印於在半導體晶圓上相異之位置"如此之台的驅動、曝光 方式即所謂之分步重複（step and repeat)方式。除了台的 驅動、曝光方式之外，亦於支撐光柵U63之支撐部件1264 設置驅動機構，使光柵與半導體晶圓同步移動而進行掃描 曝光之分步掃描（step and scan)方式，此方式亦可適用於 本發明之紫外線雷射裝置。 又，如使用本發明之紫外線雷射裝置之曝光裝置，在 以紫外線進行曝光之曝光裝置，通常係照明光學系統1262 、投影光學系統1265 —起而無色補正之全石英透鏡構成。 又，特別係在紫外線之波長爲200nm以下時，可將構成投 影光學系統1265之複數之曲折光學元件至少其中之一以螢 石所構成，或使用由至少一個反射光學元件（凹面鏡、反 72 本紙張疋度適用中國國家標準（CNS)A，1規格（210 X 297公藿） '------------X %--------，.訂---------線 (請先閱請背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 6 9 5 0 1 A7 _______ B7 五、發明說明（γ) 射鏡等）與曲折光學元件組合之反射曲折光學系統亦可。 如以上所述，使用本發明之紫外線雷射裝置之曝光裝 置’其比習知之其它方式（使用準分子雷射或固體雷射之 曝光裝置）更小型，並且，由於各要素係纖維連接所構成 ，因此構成裝置之各元件之配置自由度可提高。圖20係表 示利用如此之本發明之紫外線雷射裝置的特質之另一實施 例。 此實施例，係將前述之第1〜3實施形態任何一種所述 之雷射裝置的雷射光產生部（單一波長雷射、光分歧裝置 等）及光增幅器的構成部份，與第4〜7實施形態任何一種 所述之波長變換部分離裝置，而構成曝光裝置。即，將波 長變換部1272之載置於曝光裝置本體，另外將紫外線雷射 裝置1271之其它部份_(雷射光產生部、光增幅器等）設於 曝光裝置本體之外，而將這些間隙以連接用纖維1273連接 以構成紫外線雷射裝置。此處，連接用纖維1273可爲纖維 光增幅器之纖維本身（例如在第1實施形態之纖維束114 等）、無摻雜之纖維，或將這些加以組合亦可。又，紫外 線雷射裝置以外之曝光裝置本體的部份可使用與圖19相同 之裝置而構成。 依此構成，可將伴隨纖維光增幅器之激起用半導體雷 射及半導體雷射之驅動用電源、溫度控制器等之發熱之主 要構成部份設於曝光裝置本體外。因此，曝光裝置本體’ 其可抑制因受到曝光光源之紫外線雷射裝置之發熱的影響 ，而使光軸之排列混亂等之由熱所產生之問題。 73 本紙張尺度適用令园囷家標準（CNS)A.l規格（210 X 297公釐） ------------i ---------訂----------線 J (請先閱讀背面之注意事項再填寫本頁) 4 6 9 5 0 彳 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（π ) 但，如圖20所示，支撐光柵1263之光柵台1264係由 驅動機構1268以可往X、Y方向移動且可作微小旋轉而構 成。又，在晶圓台1267上設置基準標記板FM，此基準標 記板係用於後述之基準線計測等。進而，在本例中，設置 .檢測光柵1263上之校準標記之校準系統1280 ;及與投影光 學系統1265分別設置之離軸方式之校準系統1281。 校準系統1281係使曝光用照明光或與此同一波長領域 之照明光通過光柵1263上之校準標記及投影光學系統1265 而照射於基準標記板FM上之基準標記，同時，將由兩標 記所產生之光以攝影元件（CCD)受光而檢測其位置偏移 ，並用於光柵1263之校準及校準系統1281之基準線計側 等。 離軸方式之校準系統1281，其係例如將具有550〜 750nm程度之波長寬之白色光（寬帶光）照射於半導體晶 圓1266上之校準標記，同時，將設於其內部之指標標記之 像與校準標記之像成像於攝影元件（CCD)上*而檢測兩 標記之位置偏移。 又，由於在校準系統1280、1281分別檢測在基準標記 板FM上之基準標記，而可由該檢測結果計測校準系統 1281之基準線量。又’基準線計測雖於半導體晶圓之曝光 開始前進行，但，其亦在交換半導體晶圓時進行基準線計 測，或在複數枚之半導體晶圓之曝光動作以1次之比例進 行基準線計測。但，在光柵交換後必須進行基準線計測。 在本例中，使用圖16所示之波長變換部作爲與紫外線 74 (請先閱讀背面之注意事項再填寫本頁) 言 Γ 良 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 469501 B7____ 五、發明說明（P) 雷射裝置1271 (基本波產生部）連接之波長變換部。即， 將由4個纖維束輸出端851所產生之基本波所射入之波長 ,變換部1272與由纖維束輸出端850所產生之基本波所射入 之波長變換部1279分離，波長變換部1272係與支撐照明 光學系統1262之架台一體設置，波長變換部1279係與支 撐校準系統1280之架台一體設置。此時，將連接用纖維 1278結合於纖維束輸出端850，並將基本波導引至波長變 換部1279。依此，不必將校準系統1280之光源作別的用途 ，同時，可使用與曝光用照明光同一波長之照明光而檢測 基準標記，因此，可進行高精確度之標記檢測。 又，在本例中，雖將與曝光用照明光同一波長之照明 光導引至校準系統1280，但，其亦可將比曝光用照明光的 波長（例如193nm)更長之波長導引至校準系統1280或 1281等。即，在圖16所示之3段的波長變換部之中，例如 由第2段之波長變換部853所射出之脈衝光以連接用纖維 導引至校準系統。又，亦可將由第1段波長變換部852所 射出之脈衝光的一部份加以分歧，同時，將其剩餘之脈衝 光以第2段之波長變換部853作波長變換，而將分別由2 個波長變換部852 ' 853所射出之彼此相異波長之2個脈衝 光導引至校準系統。 又，在圖20所示之曝光裝置，藉由使用設置於載置有 在基本波產生部1271內之單一波長振盪雷射，例如DFB 半導體雷射（圖1中之11等）之散熱槽之溫度調整器（例 如Ϊ白耳帖(Peltier)元件），以調整其溫度，因而設置控制照 75 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------J..J--------訂---------線α (請先閱讀背面之注意Ϋ項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明（7)) 射於DFB半導體雷射之振盪波長，即光柵1263之紫外線 雷射光（曝光用照明光之波長）之波長控制裝置1274。波 長控制裝置1274係以0.001°C單位而控制DFB半導體雷射 之溫度’因此，進彳了紫外線雷射光之中心波長的安定化及 投影光學系統1265之光學特性（收差、焦點位置、投影倍 率等）之調整等。依此，可提高在半導體晶圓之曝光動作 中之紫外線雷射光的波長安定性，並可將紫外線雷射光之 照射及大氣壓變化等所引起而變動之投影光學系統1265之 光學特性簡單地調整。 進而，在圖20所示之曝光裝置，設置在基本波産生部 1271內，由單一波長振盪雷射（DFB半導體雷射等）所產 生之連續光變換的脈衝光之光調變元件(圖1中之12等)施 加驅動用電壓脈衝之脈衝控制部1275;順應塗布於半導體 晶圓1266之光阻的感度特性，在電路圖案轉印時，計算將 該光阻曝光所需之脈衝數，並順應該脈衝數將由脈衝控制 部1275所輸出之控制脈衝的振盪時序、及其大小等加以控 制之曝光控制部1276 ;及將曝光裝置全體統括控制之控制 裝置1277。 此處，脈衝控制部1275係進行在基本波產生部1271 內之單一波長振盪雷射（11等）之電流控制或施加於光調 變元件12之電壓的控制，俾使該單一波長振盪雷射可作脈 衝輸出。即，藉由脈衝控制部1275之電流或電壓之輸出控 制，使單一波長振盪雷射可作連續光與脈衝光之切換而輸 出。在本實施例，藉由脈衝控制部1275使單一波長振盪雷 76 本紙張尺度適闬中國®家標準（CNS)A4規格（210x297公釐） (請先閱讀背面之注f項再填寫本頁) <νι° 丁 經濟部智慈財產局員工消費合作社印製 46 95 0 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（7十） 射作脈衝振盪，同時，藉由前述之光調變元件之控制僅送 出由該被振盪之脈衝光（脈衝幅度爲10〜20ns程度）的一 部份，即脈衝幅度係調變爲Ins之脈衝光。依此，相較於 在僅使用光調變元件而將連續光變換爲脈衝光之場合，可 更容易產生消光比較高之脈衝光，同時，藉由曝光控制部 1276，使脈衝輸出間隔及脈衝輸出之開始與停止等更可簡 單地控制。 . 又，脈衝控制部1275不僅作單一波長振盪雷射之脈衝 振盪與連續振盪之切換，並且，進行其脈衝輸出之間隔及 脈衝幅度等之控制，同時可補償脈衝光之輸出變動，而進 行單一波長振盪雷射之振盪控制及施加於光調變元件之電 壓脈衝的大小控制之其中一方。依此，可補償在脈衝光之 振盪間隔變更時或脈衝光之振盪重新開始時等所產生之脈 衝光的輸出變動。即，對每一脈衝可將其輸出（強度）經 常維持在一定値。 進而，脈衝控制部1275係調整在基本波產生部1271 內以串聯配置之複數的纖維光增幅器（圖丨中之13、18、 19等）至少1個的增益，藉由僅此增益調整或與前述之光 調變元件的控制倂用，而可控制在半導體晶圓上之脈衝光 的強度。又，對於被光分歧裝置（例如圖1中之14、16及 圖2中之23等）而並聯分割之複數之通道，亦可同樣地控 制並聯設置之纖維光增幅器之至少1個的增益。 又，曝光控制部1276係檢測由基本波產生部1271所 輸出之基本波，或由波長變換部1272所輸出之紫外線，或 77 (請先閱讀背面之注意事項再填寫本頁) (1--- I ---I · 本紙張尺度適用中國國家標準（CNS)A4規烙（210 X 297公釐） 46 95 0 1 Α7 ___ Β7 .經濟部智慧財產局員工消費合作社印製 五、發明說明（π) 在波長變換部1272內例如由第1段或第2段之非線形光學 結晶所輸出之脈衝光，依此檢測値（包含強度、波長及波 長幅度等）而控制脈衝控制部1275，以調整前述之脈衝光 之振盪間隔、該振盪之開始與停止、及脈衝光之強度等。 進而，該檢測値亦輸入波長控制裝置1274，波長控制裝置 1274係依該檢測値而進行單一波長振盪雷射之溫度控制， 並調整曝光用照明光（紫外線雷射光）之中心波長及波長 .幅度。 控制裝置1277係將有關附在半導體晶圓或將其保持之 卡匣之識別記號（條碼等）之讀取裝置（未圖示），或由 操作者輸入之光阻的感度特性之資訊，送至曝光控制部 1276，曝光控制部1276依該輸入資訊而計算圖案轉印所需 之曝光脈衝數。進而，曝光控制部1276依曝光脈衝及對應 此曝光脈衝而決定之脈衝光的強度，.以控制觸發脈衝控制 部1275，並調整施加於光調變元件之控制脈衝的振盪時序 及其大小。依此，可控制曝光之開始與結束，及照射於半 導體晶圓1266上之脈衝光的強度，並且控制藉由複數之脈 衝光之照射而給予光阻之積算光量係對應其感度之適當的 曝光量。 又，曝光裝置1276係藉由將指令送至脈衝控制部 1275而進行單一波長振盪雷射之電流控制，藉由使該電流 控制，或與光調變元件之控制倂用，而可控制曝光（脈衝 輸出）之開始與結束等。 此處，在使用圖1或圖2之雷射裝置作爲本例之基本 78 ---II---II — IJ.·^ - I - ----— — — — — — J (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準<CNS>A4規格（210x 297公釐） 46 95 0 1 A7 ____ B7 五、發明說明（) <請先閱讀背面之注意事項再填寫本頁) 波產生部1271之場合，雖將光調變元件所送出之丨個脈衝 光分割爲複數（128個），但，在本例中，亦可將該被分 割後之128個脈衝光作爲1個脈衝，而以此脈衝單位進行 曝光量控制’或將該被分割後之128個脈衝光分別作爲1 個脈衝而進行曝光量控制亦可。又，在進行後者之曝光量 控制之場合’可取代藉由脈衝控制部1275之光變元件之控 制’而以調整在基本波產生部1271內之纖維光增幅器之增 益’而控制在半導體晶圓上之脈衝光之強度，或倂用此2 種控制亦可。 線α. 經濟部智慧財產局員工消費合作社印製 又，圖20所示之曝光裝置，其可將分步重複(step and repeat)方式與分步掃描(step and scan)方式作選擇性切換而 進行半導體晶圓之曝光。分步重複方式係爲使在光栅1263 上之電路圖案全部可被曝光用照明光照射，因而驅動在照 明光學系統1262內之視野光圈（光柵標記），並調整其開 口之大小等。另一方面，分步掃描方式係爲使在投影光學 系統1265之圓形投影視野內，曝光明照明光之照射領域可 被限制爲沿著與光柵1263的掃描方向垂直交叉之方向而延 伸之矩彤縫隙狀，而調整視野光圈之開口。因此，在分步 掃描方式，由於僅在光柵1263上之電路圖案的一部份被照 明，爲使該電路圖案全部在半導體晶圓上掃描曝光，對曝 光用照明光而使光柵1263同步相對移動，以對應於投影光 學系統1265之投影倍率之速度比，使半導體晶圓1266對 曝光用照明光相對移動。 但，在前述之掃描曝光時的曝光量控制，其係將由光 79 本紙張尺度通用中國國家標準（CNS)A4规格<210 X 297公釐） 4695〇| 1 A7 —一 B7 五、發明說明（）7) 調變元件所限定之頻率f與由圖2所示之TDM 23所限定之 通道間之延遲時間至少一方加以調整，在掃描曝光中，使 來自基本波產生部1271之複數之脈衝光以等時間間隔振盪 。進而’對應光阻之感度特性，而對有關在半導體晶圓上 之脈衝光之強度、半導體晶圖之掃描速度、脈衝光之振盪 間隔（頻率）、及半導體晶圓之掃描方向，其脈衝光（即 該照射領域）之幅度之至少一個加以調整，而將在半導體 晶圓上之各點橫切照射領域時所射之複數之脈衝光的積算 光量加以控制爲適當曝光量。此時，考慮到生產量》而爲 使半導體晶圓之掃描速度大致維持於晶圓台1267之最高速 度，在曝光量控制，較佳係調整其它之控制係數，即脈衝 光之強度 '振盪頻率、及照射領域之幅度之至少其中之一 〇 又’在使用圖1或圖2所示之雷射裝置而進行掃描曝 光之場合，在曝光量控制較佳係如前所述，將被分割之 128個脈衝光分別作爲1個脈衝，而以等時間間隔振盪。 但，對應半導體晶圓之掃描速度而調整該被分割後之128 個脈衝光的振盪間隔，將該128個脈衝光作爲1脈衝，即 ’在128個脈衝光照射期間，若使半導體晶圓所移動之距 離不會造成使曝光量控制精度之因素，可將該128個脈衝 光作爲1個脈衝，進行曝光量控制。又，被前述之光分歧 裝置等所分割之脈衝光的振盪間隔若十分短，曝光量控制 係可作爲連續光，而決定該控制係數。 又，以上所述之本發明之各實施形態，雖已說明輸出 80 本紙張尺度適用t國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 言 丁 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 S 9 5 0 1 A7 B7 五、發明說明（w) 與ArF準分子雷射或F2雷射相同輸出波長193nm、157nm 之紫外線雷射裝置之構成例’但’本發明並未限於此波長 之雷射裝置，其亦可藉由適當選擇雷射光產生部、光增幅 器、波長變換部之構成內容，而可提供產生例如與KrF準 分子雷射相同輸出波長248nm之紫外線雷射裝置》 例如，在雷射光產生部之作爲單一波長振盪雷射，以 992rim振盪之鏡摻雜纖維雷射或半導體雷射作爲纖維光增 幅器而使用鏡摻雜纖維光增幅器，作爲波長變換部而使用 LBO結晶以進行纖維光增幅器之輸出而生第2次高調波（ 波長496nm)，進而，使用BBO結晶以進行使該輸出產生 第4次高調波（波長248nm)之紫外線，因而構成4倍高 波產生光路，依此，可提供產生與KrF準分子雷射248nm 的紫外線雷射裝置。· 又，本發明之雷射裝置所輸出之紫外線的波長，其並 未限於與KrF準分子雷射、ArF準分子雷射或1^雷射同一 波長，其亦可例如在KrF準分子雷射（波長248nm)與F2 雷射（波長157nm)之間，設定ArF準分子雷射（波長 193nm)以外之波長。當然，亦可設定爲比KrF準分子雷 射更長之波長，或比1^2雷射更短之波長，例如亦可設定爲 與Kn雷射（波長146nm)、KrAr雷射（波長134nm)或 An雷射（波長I26nm)等同一波長。 又’在前述之實施形態所使用之纖維（包含纖維光增 幅器等）’其表面較佳係事先被覆聚四氟乙嫌纖維。以此 聚四氟乙烯纖維之被覆較佳係對全部之纖維進行，特別是 81 本紙張尺度適用中國囤家標準（CNS)A4規格（210 X 297公釐） -------------j >--------訂-----------線J (請先閱讀背面之ii意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 义 6 9 5 0 1 A7 B7 五、發明說明（1) 配置於收納曝光裝置本體之容器內之纖維能事先以聚四氟 乙烯纖維被覆。此係因由纖維所產生之異物（包含纖維等 )會形成污染曝光裝置之物質，而可防止該污染物質所導 致之構成照明光學系統、投影光學系統及校準光學系統等 之光學元件的污點、這些光學系統之透過率（反射率）及 光學特性之變動（包含收差等）\或在光柵及半導體晶圓 上之照明度與分布之變動等β又，可取代以聚四氟乙烯纖 維之被覆，而將配置於容器內之纖維整合收納於不銹鋼製 之框體亦可。 又，半導體元件，可經由進行該機能、性能設計之步 驟；依該設計步驟而製造光栅之步驟；由矽材料製造晶圓 之步驟；使用前述之曝光裝置將光柵之圖案轉印於晶圓之 步驟；元件之組立步驟（包含切割工程、接合工程、封裝 工程）；及檢查步驟而加以製造。又，前述之曝光裝置不 僅可用於半導體元件之製造，其亦可於例如液晶顯示器、 電漿顯示器、攝影元件（例如CCD等）、薄膜磁頭等之元 件，或光罩及光柵之製造等。 進而，將由複數之光學元件所構成之照明光學系統及 投影光學系統安裝於曝光裝置本體，並進行其光學調整， 同時，將由多數之機械部件所形成之光柵台及晶圓台安裝 於曝光裝置本體，連接配線與配管，進而進行統合調整（ 電氣調整、動作確認等），依此而可製造本實施例之曝光 裝置。 又，在前述之曝光裝置，進行紫外線雷射裝置1261之 82 本紙張尺度適用中囤國家標準（CNS)A‘i規格（210^297公芨） ------------1 --------^訂 ---------線 Λ (請先間讀f.面之注意事項再填寫本頁) A7 A7 ^69501 經濟部智慧財產局員工消費合作社印製 B7___ 五、發明說明（押） 曝光裝置本體之安裝，將配置於曝光裝置本體外之紫外線 雷射裝置1261之一部份（雷射光產生部及光增幅器等）與 配置於本體內之波長變換部以纖維加以連接，並進行紫外 線雷射裝置1261 (波長變換部）與照明光學系統1262之光 軸對準。又，曝光裝置之製造，其溫度及潔淨度等之管理 較佳係於無塵室內進行。 又，在以上之第9實施形態，雖使用本發明之雷射裝 置於曝光裝置，在曝光裝置之組立、調整時，亦可用於照 明光學系統及投影光學系統之光軸對準與光學特性之計測 等。此時，由於紫外線之輸出不必使用如曝光用光源般之 尺寸，因此，例如使基本波輸出增幅之纖維光增幅器的段 數可減少，而可使光源更小型化。 又，可取代將本發明之雷射裝置應用於曝光裝置，例 如將用以切斷形成於晶圓上之電路圖案之一部份（保險絲 等）之雷射修復裝置等，而使用本發明之雷射裝置亦可。 又，本發明之雷射裝置亦可適用於使用可視光或紅外線之 檢查裝置等。又，在此場合，不必將前述第4〜7實施形態 所說明之波長變換部安裝於雷射裝置。即，本發明不僅對 紫外線雷射裝置，其對未具有產生可視領域或紅外線領域 的基本波之波長變換部之雷射裝置亦有效。 〔發明效果〕 如以上所述，依本發明之雷射裝置，光譜線寬係例如 lpm以下所形成之紫外線可容易獲得，同時，可抑制每一 脈衝之最大電力，達到作爲光源全體之雷射光輸出之增大 _____83 _ 紙張尺度通用中國國家標準（CNS)A4規格（210 x 297公釐） ' (靖先閱讀背面之注意事項再填寫本頁) • n n f— IK ft— ϋ I n I l I 1 n I . 4S95 Ο 1 Α7 Β7 五、發明說明（) ，及獲得空間之相干性較低之紫外線。又，依本發明之曝 光裝置，可達到在無塵室內之曝光裝置之專有面積之縮小 ，同時，可獲得曝光裝置之運轉成本降低及維修作業之簡 化'時間縮短、費用削減等。進而，依本發明之曝光方法 ，不會產生斑點且可以高照明度均一性進行曝光，同時， 藉由縮短維修時間而可提高生產性。又，依本發明之元件 製造方法，可實現特別是在光刻工程之製造成本之降低。 (請先閱讀背面之注意事項再填寫本頁) -ν6Ί r ί 經濟部智慧財產局員工消費合作社印製 84 本紙張尺度適用中國國家標準（CNS)A4規格（210^ 297公釐）『SJI J · ϋ IIIIIIII ϋ n I ϋ n ϋ II n I ϋ D This paper size applies the Chinese National Standard (CNS) A4 specification (210 * 297 mm) A7 B7 46 95 0 V. Description of the invention (α) and emit light Pulsed light, so there is no overlap in time. 'A single wavelength of ultraviolet light with a very narrow band, and each output light will not interfere with each other. In addition, for example, the ultraviolet output obtained when the fundamental wave generating unit of the second embodiment is used is a pulsed light that emits light at an equal interval of about 78 ns, so it does not overlap in time, and has an extremely narrow band. With a single wavelength of ultraviolet light, each output light will not interfere with each other. Furthermore, in the solid-state ultraviolet array disclosed in, for example, Japanese Unexamined Patent Publication No. 8-334803, a wavelength conversion unit is required for each fundamental wave laser (each laser element) that is parallelized. According to this embodiment, since a basic The total fiber channel diameter of the wave output is 2 or less in total. Therefore, the wavelength conversion of all channels can be performed with only one wavelength conversion unit. In addition, since the wavelength conversion unit is arranged separately from other components such as a single-wavelength laser, a beam splitter, and a time division optical branching device, the degree of freedom of arrangement is extremely high. Therefore, according to the present invention, it is possible to provide a low-cost and compact single-wavelength low-space coherent ultraviolet laser. Next, the ninth embodiment of the ultraviolet laser device of the present invention will be described. The ultraviolet laser device of this embodiment is characterized by using the ultraviolet laser device of the first to eighth embodiments as a light source for an exposure device. Hereinafter, an embodiment of an exposure apparatus using the ultraviolet laser device of the present invention will be described with reference to Fig. 19. The principle of the exposure device used in photolithography is the same as that of photo-making. The element pattern accurately drawn on a photomask (grating) is optically projected on a substrate coated with a semiconductor wafer or glass plate coated with photoresist. 'And transfer the pattern image to the photoresist. The ultraviolet laser device 1261 and the illumination optical system 1262 and 69 of the projection optical system of the present invention are applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) paper size ----------- -. X \ --------. Order; --------- line α. (Please read the notes on the back before filling this page) Employees of the Intellectual Property Bureau of the Ministry of Industry and Economics, printed clothing for consumer cooperatives 46 95 0 1 A7 B7 V. Description of the invention (q) System 1265 and other exposure devices are integrated. At this time, the ultraviolet laser device 1261 can be fixed on a stand supporting the illumination optical system 1261, or the ultraviolet laser device can be fixed on the stand alone. However, it is preferable that a power source or the like connected to the ultraviolet laser device 1261 be set separately from the stand in advance. In addition, the ultraviolet laser device 1261 is separate from the first part having a laser light generating section and an optical amplifier, and the second part having a wavelength conversion section. The second part is fixed to the illumination optical system 1262 as a body. On the stand, and fix the first part on another stand. Furthermore, all the ultraviolet laser devices 1261 are arranged in a container storing the exposure device body, or a part of the ultraviolet laser device 1261 such as a wavelength conversion section is arranged in the container, and the remaining part is integrated with the container on the outside thereof. . In addition, the control system of the ultraviolet laser device 1261 can be stored in a control rack provided separately from the container, or a display unit, a switch, and the like can be integrated with the container on the outside, and the remaining portion can be arranged in the container. Secondly, according to the present invention, the ultraviolet rays with narrow bands and low spatial coherence are uniformly enlarged and projected by the illumination optical system 1262 on the necessary projection surface, and the circuit pattern of the integrated circuit is The light is irradiated on a quartz mask (quartz grating) 1263 which is precisely depicted. The circuit pattern of the grating 1263 is reduced by the projection optical system 1265 at a predetermined reduction ratio (such as 1/4, 1/5, 1/6, etc.), and is projected on a semiconductor wafer (such as a silicon wafer) coated with a photoresist. On 1266, the reduced image of the aforementioned circuit pattern is imaged and transferred onto the photoresist. The illumination optical system 1262 is disposed in a surface that roughly functions with the pattern surface of the grating 1263, and includes: the illumination 70 specified on the grating 1263 ------------ Λ ί ----- -I 4 Order · ------!线-^ {Please read the notes on the back before filling in this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 4 6 9 5 0 1 a? B7 Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by a consumer cooperative. V. Light field diagram in the field of invention description (α); stipulates that in the illumination optical system 1262, the opening surface of the light quantity distribution of the ultraviolet rays on the predetermined surface of the patterned surface of the grating 1263 is Fourier-transformed: and A capacitor lens or the like of the grating 1263 is irradiated with ultraviolet rays emitted from the aperture stop. At this time, in order to change the light quantity distribution of ultraviolet rays on a predetermined surface, one of a plurality of opening apertures whose shapes and sizes are different from each other may be set on a lens disk, and one selected in accordance with the pattern of the grating 1263 One of the plurality of opening beams is arranged in the light path of the illumination optical system 1262. An optical integrator may be arranged between the wavelength conversion section of the ultraviolet laser device 1261 and the field diaphragm. When a fly eye lens is used as the optical integrator, the exit side focal plane can be configured to form a Fourier transform relationship with the pattern surface of the grating 1263. When using a rod integrator as an optical integrator: The exit surface can be configured to work with the pattern surface of the grating 1263. ^ Also, as the exposure start shutter of the exposure device, the electro-optic modulator or the acoustic-optical modulator (12 , 22, 32). The electric optical modulation element or the acoustic optical modulation element is switched from the OFF state, ie, no pulse is generated (large internal loss), to the ON state, which is a pulsed state (pulse-shaped and reduced internal loss), and starts. Exposure D: In an exposure device having an ultraviolet laser device 1261, continuous light may be output by a single-wavelength laser composing the ultraviolet laser device 1261, or a single-wavelength laser may be used as a pulse output. Especially for the latter, the current control of a single-wavelength oscillating laser and the aforementioned electro-optic modulator 71 ------------ i \ -------- r order --- -------- Line J. < Please read the notes on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 (210x297 mm) Employees' expenses for the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the cooperative 469501 V. Description of invention (M) or audio-optical modulation control element, and control the output interval, start and stop of output of ultraviolet (pulse light) irradiated on the grating 1263 and semiconductor wafer 1266, etc. . Further, in the exposure device having the ultraviolet laser device 1261 of this embodiment, it is not necessary to use a mechanical shutter to control the integrated light amount of ultraviolet rays on the wafer 1266. For example, the output of the ultraviolet laser device 1261 (electricity, (Center wavelength, wavelength width, etc.) When the ultraviolet light is oscillated, in order to prevent the photoresist from being exposed due to the ultraviolet rays reaching the wafer 1266, a shutter may be arranged in the illumination light path between the ultraviolet laser device 1261 and the wafer 1266, or The driving table 1267 may retreat the wafer 1266 from the ultraviolet irradiation area. The semiconductor wafer 1266 is placed on a stage 1267 with a driving mechanism 1269. When an exposure is completed, the circuit pattern is transferred to a different position on the semiconductor wafer by moving the stage. &Quot; Such a stage The driving and exposure methods are the so-called step and repeat methods. In addition to the stage driving and exposure methods, a stepping and scanning method is also provided for the supporting mechanism 1264 supporting the grating U63 to drive the grating and the semiconductor wafer synchronously for scanning and exposure. This method can also be used. Suitable for the ultraviolet laser device of the present invention. In addition, as for the exposure device using the ultraviolet laser device of the present invention, an exposure device that exposes with ultraviolet rays is usually composed of an all-quartz lens with illumination optical system 1262 and projection optical system 1265 without color correction. In particular, when the wavelength of the ultraviolet rays is 200 nm or less, at least one of the plurality of meandering optical elements constituting the projection optical system 1265 may be made of fluorite, or at least one reflective optical element (concave mirror, reflective lens, etc.) may be used. Paper size applies to China National Standard (CNS) A, 1 specifications (210 X 297 cm) '------------ X% -------- ,. Order --- ------ line (please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 9 5 0 1 A7 _______ B7 V. Invention Description (γ) Lenses, etc. ) A reflective tortuous optical system combined with a tortuous optical element is also possible. As described above, the exposure device 'using the ultraviolet laser device of the present invention' is smaller than other conventional methods (exposure devices using excimer lasers or solid lasers), and is composed of various elements based on fiber connections. Therefore, the degree of freedom in the arrangement of the components constituting the device can be improved. Fig. 20 shows another embodiment using the characteristics of the ultraviolet laser device of the present invention. This embodiment is a combination of the laser light generating section (single-wavelength laser, optical branching device, etc.) and the optical amplifier of the laser device described in any of the first to third embodiments described above with the fourth ~ 7 The wavelength conversion section separating device according to any one of the seventh embodiments constitutes an exposure device. That is, the wavelength conversion section 1272 is placed on the exposure device body, and the other parts of the ultraviolet laser device 1271 (laser light generating section, optical amplifier, etc.) are provided outside the exposure device body, and these gaps are placed The connection fiber 1273 is connected to constitute an ultraviolet laser device. Here, the connection fiber 1273 may be the fiber itself of the optical amplifier (for example, the fiber bundle 114 in the first embodiment), an undoped fiber, or a combination of these. The parts of the exposure apparatus main body other than the ultraviolet laser apparatus can be configured using the same apparatus as that shown in FIG. According to this structure, the main components of the heat generated by the semiconductor laser for exciting the fiber laser amplifier, the power source for driving the semiconductor laser, and the temperature controller can be provided outside the exposure device body. Therefore, the main body of the exposure device can suppress the problems caused by heat, such as the disorder of the arrangement of the optical axis, due to the influence of the heat generated by the ultraviolet laser device of the exposure light source. 73 The size of this paper applies to CNS Al standard (210 X 297 mm) ------------ i --------- Order ----- ----- Line J (Please read the notes on the back before filling this page) 4 6 9 5 0 彳 A7 B7 Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (π) However, as shown in Figure 20 As shown, the grating stage 1264 supporting the grating 1263 is constituted by a driving mechanism 1268 that can move in the X and Y directions and can be rotated slightly. A reference mark plate FM is provided on the wafer stage 1267, and the reference mark plate is used for reference line measurement and the like described later. Further, in this example, a calibration system 1280 that detects a calibration mark on the grating 1263 and an off-axis calibration system 1281 that is separately provided from the projection optical system 1265 are provided. The calibration system 1281 is a reference mark on the reference mark plate FM that is illuminated by exposure illumination light or illumination light in the same wavelength range through the calibration mark on the grating 1263 and the projection optical system 1265. At the same time, it will be generated by the two marks. The light is detected by a photographic element (CCD) to detect its position shift, and is used for the calibration of the grating 1263 and the datum line side of the calibration system 1281. The off-axis calibration system 1281 is a calibration mark that irradiates white light (broadband light) having a wavelength range of about 550 to 750 nm on a semiconductor wafer 1266, and at the same time, an image of an index mark provided inside it The image with the calibration mark is imaged on the photographic element (CCD) *, and the position deviation of the two marks is detected. In addition, since the reference marks on the reference mark plate FM are detected by the calibration systems 1280 and 1281, the reference line amount of the calibration system 1281 can be measured from the detection results. Also, although the reference line measurement is performed before the exposure of the semiconductor wafer is started, it also performs the reference line measurement when the semiconductor wafer is exchanged, or the reference line is performed at a ratio of once in the exposure operation of a plurality of semiconductor wafers. Measure. However, baseline measurement must be performed after the grating exchange. In this example, the wavelength conversion unit shown in Fig. 16 is used as the UV 74 (please read the precautions on the back before filling this page). Γ Good paper size is in accordance with China National Standard (CNS) A4 (210 X 297) (Mm) A7 469501 B7____ 5. Description of the invention (P) The wavelength conversion unit connected to the laser device 1271 (fundamental wave generating unit). In other words, the wavelength conversion unit 1272 separates the wavelengths of the fundamental wave generated by the four fiber bundle output ends 851 from the wavelength conversion unit 1279 of the fundamental wave generated by the fiber bundle output end 850, and the wavelength conversion unit 1272. It is provided integrally with a stand supporting the illumination optical system 1262, and the wavelength conversion section 1279 is integrally provided with a stand supporting the calibration system 1280. At this time, the connection fiber 1278 is coupled to the fiber bundle output terminal 850, and the fundamental wave is guided to the wavelength conversion unit 1279. Therefore, it is not necessary to use the light source of the calibration system 1280 for other purposes. At the same time, the reference mark can be detected using the illumination light having the same wavelength as the exposure illumination light. Therefore, high-precision mark detection can be performed. In this example, although the illumination light having the same wavelength as the exposure illumination light is guided to the calibration system 1280, it may also be guided to a wavelength longer than the wavelength (for example, 193 nm) of the exposure illumination light to Calibration system 1280 or 1281, etc. That is, among the three-stage wavelength conversion section shown in FIG. 16, for example, the pulsed light emitted by the second-stage wavelength conversion section 853 is guided to the calibration system by the connection fiber. In addition, a part of the pulsed light emitted by the first-stage wavelength conversion section 852 may be divided, and the remaining pulsed light may be wavelength-converted by the second-stage wavelength conversion section 853. The two pulsed light beams emitted from the two wavelength conversion units 852 '853 and having mutually different wavelengths are guided to the calibration system. Further, in the exposure apparatus shown in FIG. 20, a single-wavelength oscillating laser, such as a DFB semiconductor laser (11 in FIG. 1, etc.), mounted on a fundamental wave generating section 1271 is used. Temperature adjuster (such as Peltier element) to adjust its temperature, so set the control photo 75 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ------ ------ J..J -------- Order --------- Line α (Please read the note on the back before filling this page) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the consumer cooperative A7 B7 V. Description of the invention (7)) The wavelength control device 1274 of the oscillation wavelength of the DFB semiconductor laser, that is, the ultraviolet laser light of the grating 1263 (the wavelength of the illumination light for exposure). The wavelength control device 1274 controls the temperature of the DFB semiconductor laser in units of 0.001 ° C. Therefore, the stabilization of the central wavelength of the ultraviolet laser light and the optical characteristics of the projection optical system 1265 (aberration, focus position, projection magnification) Etc.) adjustments. Accordingly, the wavelength stability of the ultraviolet laser light during the exposure operation of the semiconductor wafer can be improved, and the optical characteristics of the projection optical system 1265 which is changed due to the irradiation of the ultraviolet laser light and changes in atmospheric pressure can be easily adjusted. Furthermore, the exposure device shown in FIG. 20 is provided in the fundamental wave generating section 1271, and is a light modulation element for pulsed light converted by continuous light generated by a single-wavelength oscillating laser (DFB semiconductor laser, etc.) (FIG. 1 12 of the above) The pulse control unit 1275 for applying a driving voltage pulse; In accordance with the sensitivity characteristic of the photoresist applied to the semiconductor wafer 1266, when the circuit pattern is transferred, calculate the number of pulses required to expose the photoresist, and In accordance with the number of pulses, the exposure control unit 1276 that controls the oscillation timing of the control pulses outputted by the pulse control unit 1275 and the magnitude thereof, and the control unit 1277 that controls the entire exposure apparatus collectively. Here, the pulse control unit 1275 performs current control of a single-wavelength oscillating laser (11, etc.) in the fundamental wave generating unit 1271 or control of a voltage applied to the light modulation element 12, so that the single-wavelength oscillating laser is controlled. Can be used for pulse output. That is, by controlling the output of the current or voltage of the pulse control unit 1275, a single-wavelength laser can be switched between continuous light and pulsed light and output. In this embodiment, the single-wavelength oscillating lightning 76 is made by the pulse control unit 1275. The paper size is suitable for China® Home Standard (CNS) A4 specification (210x297 mm) (please read the note f on the back before filling this page) < νι ° D printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 46 95 0 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (70) The pulse is oscillated. The control of the light modulation element only sends out a part of the oscillated pulse light (pulse amplitude is about 10 ~ 20ns), that is, the pulse light whose pulse amplitude is modulated to Ins. Accordingly, compared with the case where continuous light is converted into pulsed light using only a light modulation element, pulsed light having a relatively high extinction can be generated more easily. At the same time, the exposure control unit 1276 enables the pulse output interval and pulse The start and stop of output can be controlled more easily. In addition, the pulse control unit 1275 not only performs switching between pulsed oscillation and continuous oscillation of a single wavelength oscillation laser, but also controls the pulse output interval and pulse amplitude, etc., and at the same time, it can compensate for fluctuations in the output of the pulsed light and perform a single operation. Either the oscillation control of the wavelength oscillation laser or the magnitude control of the voltage pulse applied to the light modulation element. In this way, it is possible to compensate for variations in the output of the pulsed light that occurs when the oscillation interval of the pulsed light is changed or when the oscillation of the pulsed light is restarted. That is, the output (intensity) of each pulse can often be maintained at a certain level. Further, the pulse control unit 1275 adjusts the gain of at least one of a plurality of fiber optical amplifiers (13, 18, 19, etc. in the figure) arranged in series in the fundamental wave generating unit 1271. By adjusting only this gain or In combination with the aforementioned control of the light modulation element, the intensity of the pulsed light on the semiconductor wafer can be controlled. In addition, for a plurality of channels divided in parallel by optical branching devices (such as 14, 16 in FIG. 1 and 23 in FIG. 2, etc.), the gain of at least one of the fiber optical amplifiers installed in parallel can be similarly controlled. . The exposure control unit 1276 detects the fundamental wave output by the fundamental wave generation unit 1271, or the ultraviolet rays output by the wavelength conversion unit 1272, or 77 (please read the precautions on the back before filling this page) (1-- -I --- I · This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 46 95 0 1 Α7 ___ Β7. Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs π) In the wavelength conversion unit 1272, for example, the pulsed light output by the non-linear optical crystals of the first or second stage, the pulse control unit 1275 is controlled based on the detection of chirp (including intensity, wavelength, and wavelength range) to adjust The aforementioned oscillation interval of the pulsed light, the start and stop of the oscillation, and the intensity of the pulsed light, etc. Furthermore, the detection signal is also input to the wavelength control device 1274, and the wavelength control device 1274 performs a single-wavelength oscillation laser in accordance with the detection signal. Control the temperature, and adjust the central wavelength and wavelength of the illumination light (ultraviolet laser light) for exposure. The control device 1277 is the identification record of the cassette attached to or held on the semiconductor wafer. No. (bar code, etc.) reading device (not shown), or information on the sensitivity characteristics of the photoresist entered by the operator, is sent to the exposure control section 1276, and the exposure control section 1276 calculates the pattern transfer station based on the input information. The number of exposure pulses required. Further, the exposure control unit 1276 determines the intensity of the pulse light according to the exposure pulse and the corresponding exposure pulse to control the trigger pulse control unit 1275 and adjusts the oscillation of the control pulse applied to the light modulation element. Timing and its size. Based on this, the start and end of exposure and the intensity of pulsed light irradiated on the semiconductor wafer 1266 can be controlled, and the amount of accumulated light given to photoresist by irradiation of a plurality of pulsed light corresponds to its The exposure amount is appropriate for the sensitivity. The exposure device 1276 controls the current of the single-wavelength laser by sending a command to the pulse control unit 1275, and controls the current or the light modulation element. It can be used to control the start and end of exposure (pulse output), etc. Here, the laser device of Figure 1 or Figure 2 is used as the basic 78 --- II --- II-IJ. · ^-I-----— — — — — — J (Please read the notes on the back before filling this page) This paper size is applicable to the Chinese National Standard < CNS > A4 (210x 297 mm) 46 95 0 1 A7 ____ B7 V. Description of the invention () < Please read the notes on the back before filling this page) In the case of the wave generator 1271, the pulse light sent from the light modulation element is divided into complex numbers (128 However, in this example, it is also possible to use the divided 128 pulsed lights as one pulse, and use this pulse unit to perform exposure control 'or to divide the divided 128 pulsed lights as It is also possible to perform exposure control with one pulse. In addition, in the case of performing the latter exposure amount control, "the optical fiber variable amplifier in the fundamental wave generating section 1271 can be controlled by adjusting the gain of the fiber optical amplifier in the fundamental wave generating section 1271 instead of the control of the optical variable element by the pulse control section 1275" to control the semiconductor crystal. The intensity of the pulsed light on the circle can also be controlled by these two types. Line α. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The exposure device shown in Fig. 20 can selectively switch between the step and repeat method and the step and scan method. Exposure of a semiconductor wafer. The step-and-repeat method is to make all the circuit patterns on the grating 1263 can be illuminated by the exposure light, so the field diaphragm (grating mark) in the illumination optical system 1262 is driven, and the size of the opening is adjusted. On the other hand, the stepwise scanning method is such that within the circular projection field of view of the projection optical system 1265, the illuminated area of the exposed bright illumination light can be limited to a moment extending in a direction perpendicular to the scanning direction of the grating 1263. Tong slit-shaped, and adjust the aperture of the field of view aperture. Therefore, in the stepwise scanning method, since only a part of the circuit pattern on the grating 1263 is illuminated, in order to scan and expose the circuit pattern entirely on the semiconductor wafer, the grating 1263 is relatively moved synchronously with the exposure illumination light. The semiconductor wafer 1266 relatively moves the exposure illumination light at a speed ratio corresponding to the projection magnification of the projection optical system 1265. However, the exposure amount control during the aforementioned scanning exposure will be controlled by the light 79 paper standard common Chinese National Standard (CNS) A4 specification < 210 X 297 mm) 4695〇 | 1 A7 — One B7 V. Description of the invention (7) At least one of the delay time between the frequency f defined by the modulation element and the channel defined by TDM 23 shown in FIG. 2 is adjusted. In the scanning exposure, a plurality of pulses from the fundamental wave generating section 1271 are made. The light oscillates at equal time intervals. Furthermore, according to the sensitivity characteristics of the photoresistor, the pulsed light of the intensity of the pulsed light on the semiconductor wafer, the scanning speed of the semiconductor crystal pattern, the oscillation interval (frequency) of the pulsed light, and the scanning direction of the semiconductor wafer (That is, the irradiation area) is adjusted at least one, and the integrated light quantity of the plurality of pulsed light emitted when each point on the semiconductor wafer crosses the irradiation area is controlled to an appropriate exposure quantity. At this time, in consideration of the production volume ", in order to keep the scanning speed of the semiconductor wafer approximately at the highest speed of the wafer table 1267, in the exposure amount control, it is preferable to adjust other control coefficients, that is, the intensity of the pulsed light 'oscillation frequency And at least one of the amplitudes of the irradiation field. When scanning exposure is performed using the laser device shown in FIG. 1 or FIG. 2, the exposure amount control is preferably as described above, and will be divided into The 128 pulses of light are oscillated at equal time intervals as one pulse. However, according to the scanning speed of the semiconductor wafer, the oscillation interval of the divided 128 pulsed light is adjusted, and the 128 pulsed light is regarded as one pulse, that is, if the semiconductor wafer is exposed to 128 pulsed light during the irradiation period, The moving distance does not cause a factor that affects the accuracy of the exposure amount control, and the 128 pulse light can be used as one pulse for exposure amount control. In addition, if the oscillation interval of the pulsed light divided by the aforementioned light divergence device is very short, the exposure amount control system can determine the control coefficient as continuous light. In addition, although the embodiments of the present invention described above have been described as outputting 80 paper sizes, the national standard (CNS) A4 specification (210 X 297 mm) is applicable. (Please read the precautions on the back before filling in this page. ) Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs S 9 5 0 1 A7 B7 V. Description of the invention (w) Same output wavelength as ArF excimer laser or F2 laser Configuration examples of ultraviolet laser devices of 193nm and 157nm 'but' the present invention is not limited to laser devices of this wavelength, and the constitutional content of the laser light generating section, optical amplifier, and wavelength conversion section can also be selected appropriately, and UV laser devices with the same output wavelength as 248nm for KrF excimer lasers can be provided. For example, as a single-wavelength oscillating laser in the laser light generation section, a mirror-doped fiber laser or semiconductor laser with 992rim oscillation is used as Fiber-optic amplifiers use mirror-doped fiber-optic amplifiers, and use LBO crystals as the wavelength conversion unit to output the fiber-optic amplifiers to generate the second high-frequency wave (wavelength 49 6nm), and then use BBO crystals to generate the fourth high-frequency wave (248nm wavelength) of ultraviolet light at the output, thereby forming a 4 times higher wave generation optical path, which can provide an ultraviolet laser that generates 248nm with KrF excimer laser.射 装置。 Shooting device. Also, the wavelength of the ultraviolet light output from the laser device of the present invention is not limited to the same wavelength as the KrF excimer laser, ArF excimer laser, or 1 ^ laser, and it may also be, for example, a KrF excimer laser (Wavelength 248nm) and F2 laser (wavelength 157nm), set a wavelength other than the ArF excimer laser (wavelength 193nm). Of course, it can also be set to a longer wavelength than KrF excimer laser, or a shorter wavelength than 1 ^ 2 laser. For example, it can also be set to Kn laser (wavelength 146nm), KrAr laser (wavelength 134nm) Or An laser (wavelength I26nm) and the same wavelength. It is also preferable that the surface of the fiber (including fiber optical amplifier, etc.) used in the foregoing embodiment is coated with PTFE fiber in advance. In this way, the coating of polytetrafluoroethylene fibers is preferably performed on all the fibers, especially 81 paper sizes are applicable to the Chinese standard (CNS) A4 (210 X 297 mm) --------- ---- j > -------- Order ----------- Line J (please read the notices on the back before filling out this page) Staff Consumption of Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative cooperative printing 6 9 5 0 1 A7 B7 V. Description of the invention (1) The fibers arranged in the container that houses the exposure device body can be covered with PTFE fiber in advance. This is because foreign matter (including fibers, etc.) generated by fibers can contaminate the exposure device, which can prevent stains on the optical elements that constitute the lighting optical system, projection optical system, and calibration optical system, etc. Changes in the transmittance (reflectivity) and optical characteristics of optical systems (including differences in yield) \ or changes in illumination and distribution on gratings and semiconductor wafers, etc. β, and can replace the coating with polytetrafluoroethylene fibers Alternatively, the fibers arranged in the container may be integrated and stored in a stainless steel frame. In addition, the semiconductor element can be designed by the function and performance; the step of manufacturing a grating according to the design step; the step of manufacturing a wafer from a silicon material; and using the aforementioned exposure device to transfer the pattern of the grating to the wafer Steps; assembly steps of components (including cutting process, bonding process, packaging process); and inspection steps for manufacturing. In addition, the aforementioned exposure device can be used not only in the manufacture of semiconductor devices, but also in devices such as liquid crystal displays, plasma displays, photographic devices (such as CCDs), thin-film magnetic heads, etc., or the manufacture of photomasks and gratings. Furthermore, an illumination optical system and a projection optical system composed of a plurality of optical elements are mounted on the exposure apparatus body, and optical adjustment is performed. At the same time, a grating stage and a wafer stage formed of a large number of mechanical components are mounted on the exposure apparatus body. By connecting wiring and piping, and then performing integrated adjustment (electric adjustment, operation confirmation, etc.), the exposure device of this embodiment can be manufactured according to this. In addition, in the aforementioned exposure device, the ultraviolet laser device 1261-82 is applied to this paper standard applicable to the national standard (CNS) A'i specification (210 ^ 297 cm). ------------ 1 -------- ^ Order --------- line Λ (please read the precautions on f. Before filling in this page) A7 A7 ^ 69501 Employee Consumption Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs Printed B7___ V. Description of the invention (push) The installation of the exposure device body will be a part of the ultraviolet laser device 1261 (laser light generating unit and optical amplifier, etc.) arranged outside the exposure device body and the inside of the body. The wavelength conversion section is connected with a fiber, and the optical axis of the ultraviolet laser device 1261 (wavelength conversion section) and the illumination optical system 1262 are aligned. In the manufacture of the exposure device, the management of temperature and cleanliness is preferably performed in a clean room. In addition, in the ninth embodiment described above, although the laser device of the present invention is used in an exposure device, it can also be used for optical axis alignment and optical characteristics of the illumination optical system and projection optical system when the exposure device is assembled and adjusted. Measurement, etc. At this time, since it is not necessary to use the same size as the light source for exposure for the output of ultraviolet rays, for example, the number of segments of the fiber optical amplifier for increasing the fundamental wave output can be reduced, and the light source can be made more compact. In addition, instead of applying the laser device of the present invention to an exposure device, for example, a laser repair device for cutting a part (a fuse, etc.) of a circuit pattern formed on a wafer, the present invention can be used. Laser devices are also available. The laser device of the present invention can also be applied to an inspection device or the like using visible light or infrared rays. In this case, it is not necessary to mount the wavelength conversion section described in the fourth to seventh embodiments on the laser device. That is, the present invention is effective not only for an ultraviolet laser device, but also for a laser device which does not have a wavelength conversion section that generates a fundamental wave in the visible region or the infrared region. [Effects of the Invention] As described above, according to the laser device of the present invention, ultraviolet rays formed at a spectral line width of, for example, less than lpm can be easily obtained, and at the same time, the maximum power of each pulse can be suppressed to achieve laser light as a whole light source. Increase in output _____83 _ Paper size Common Chinese National Standard (CNS) A4 specification (210 x 297 mm) '(Jing first read the precautions on the back before filling out this page) • nnf— IK ft— ϋ I n I l I 1 n I. 4S95 Ο 1 Α7 Β7 V. Description of the invention (), and obtain ultraviolet light with low coherence in space. In addition, according to the exposure device of the present invention, the exclusive area of the exposure device in a clean room can be reduced. At the same time, it is possible to reduce the operation cost of the exposure device and the simplification of the maintenance operation. Furthermore, according to the exposure method of the present invention, speckles are not generated and exposure can be performed with high uniformity of illumination. At the same time, productivity can be improved by shortening the maintenance time. In addition, according to the device manufacturing method of the present invention, it is possible to achieve a reduction in manufacturing cost, particularly in a photolithography process. (Please read the precautions on the back before filling out this page) -ν6Ί r ί Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 84 This paper size applies to China National Standard (CNS) A4 (210 ^ 297 mm)

Claims (1)

月岣:] AS ;f!iF C3 ‘ D8 六、申請專利範圍 1. 一種雷射裝置，其特徵係具備： 具有自紅外線域至可視域之波長範圍內，產生單一波 長的雷射光之單一波長振鹽雷射的雷射光產生部； 具有將前述雷射光產生部所產生之雷射光增幅之纖維 光增幅器的光增幅器；及 使用非線形光學結晶，將前述所增幅之雷射光作波長 變換爲紫外線之波長變換部； 以產生單一波長的紫外線。 2. 如申請專利範圍第1項所述之雷射裝置，其中前述 單一波長振盪雷射係具有控制使前述所產生之雷射光的振 盪波長爲一定波長的振盪波長控制手段。 3. 如申請專利範圍第1項所述之雷射裝置，其更其備 :將前述單一波長振盪雷射所產生之雷射光複數分歧的光 分歧手段。 4. 如申請專利範圍第3項所述之雷射裝置，其中前述 光分歧手段係具有將前述單一波長振盪雷射所產生之雷射 光複數並列分歧之分束器，並且，在該分束器的射出側設 置長度相異之纖維。 5. 如申請專利範圍第4項所述之雷射裝置，其中前述 長度相異之纖維的各長度係將在該纖維輸出端所並列分歧 之雷射光的相互延遲間隔，設定爲一定間隔。 6. 如申請專利範圍第5項所述之雷射裝置，其中前述 長度相異之纖維的各長度，設定爲射入前述分束器之雷射 光的重複頻率與被前述分束器並列分歧的分歧光路徑數之 J it--------^ --------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 ^紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 6 9 5 0 i Α8 Β8 C8 D8 六、申請專利範圍 積的逆數。 7. 如申請專利範圍第3項所述之雷射裝置，其中前述 光分歧手段具有時分割光分歧手段。 8. 如申請專利範圍第1〜7項中之任一項所述之雷射裝 置’其中設於前述波長變換部之入射側之前述光增幅器的 輸出端部，將該纖維輸出端部的核心朝向纖維輸出端面而 擴大形成錐形。 9_如申請專利範圍第1〜7項中之任一項所述之雷射裝 置，其中設於前述波長變換部之入射側之前述光增幅器的 輸出端部，具有設於纖維輸出端部，並使被前述光增幅器 所增幅之雷射光透過之窗部件。 10. 如申請專利範圍第1〜7項中之任一項所述之雷射 裝置，其中前述光增幅器，具有餌摻雜纖維光增幅器。 11. 如申請專利範圍第1〜7項中之任一項所述之雷射 裝置，其中1 前述光增幅器，具有將餌及鏡摻雑而成之纖維 光增幅器。 12. 如申請專利範圍第1〜7項中之任一項所述之雷射 裝置，其中前述光增幅器，具有將被前述光分歧手段所分 歧之複數分歧光分別增幅之複數之纖維光增幅器。 13. 如申請專利範圍第12項所述之雷射裝置，其中前 述光增幅器，具有控制前述複數之纖維光增幅器之各激起 強度的纖維輸出控制手段，使前述紫外線之輸出變爲所定 之光輸出，或使被前述複數之纖維光增幅器所增幅之各光 輸出變爲所定之光輸出β 2 ------------'-^--------訂-------線，i „ ‘ (锖先閱讀背面之注意事項再填窵本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用令國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 ^6 9 5 0 ^ as J I B8 ^_g_ 六、申請專利範圍 14. 如申請專利範圍第12項所述之雷射裝置，其中設 於前述波長變換部之入射側的前述光增幅器之輸出端部， 將前述複數之纖維光增幅器的輸出端分割爲一或複數之輸 出群，並使各輸出群形成束狀。 15. 如申請專利範圍第14項所述之雷射裝置，其中前 述被分割爲複數之群之光增幅器的輸出群，係由將一或少 數之纖維輸出端形成束狀的第1之輸出群；及除去前述第 1之輸出群所剩下之纖維輸出端約均等分割爲一或複數的 輸出群而形成束狀的第2之一或複數之輸出群所構成。 16. 如申請專利範圍第14項所述之雷射裝置，其中在 設於前述波長變換部之射入側的前述光增幅器之輸出端部 ，使前述各輸出群皆具有：設於以前述各輸出群形成束狀 之各纖維輸出端部，並使被前述光增幅器所增幅之雷射光 透過的窗部件。 17. 如申1靑專利範圍第14項所述之雷射裝置，其中在 前述每一光增幅器之輸出群均設置前述波長變換部。 18. 如申請專利範圍第1〜7項中之任一項所述之雷射 裝置，其中在前述波長變換部之輸入側，具有將由前述光 增幅器所射出之雷射光聚光並射入前述非線形光學結晶之 聚光光學元件。 19. 如申請專利範圍第18項所述之雷射裝置，其中在 前述每一光增幅器之輸出群設置前述聚光光學元件。 20. 如申請專利範圍第18項所述之雷射裝置’其中在 前述各光增幅器的複數之纖維輸出端設置前述聚光光學元 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公笼） j"--------訂*--------線 (請先閱讀背面之注意事項再填寫本頁) 8 858 ABaD 469501 六、申請專利範圍 件。 21. 如申請專利範圍第1〜7項中之任一項所述之雷射 裝置，其中前述雷射光產生部係產生波長1.5/zm左右之單 一波長的雷射光；前述波長變換部係將由前述光增幅器所 輸出之前述波長約1.5^m的基本波，產生作爲8倍禹調波 或10倍高調波之紫外線。 22. 如申請專利範圍第21項所述之雷射裝置，其中前 述單一波長振盪雷射爲將振盪波長保持在1.51〜1.59/zm 範圍內之DFB.半導體雷射或纖維雷射；前述波長變換部係 產生波長爲189〜199nm範圍內之8倍高調波。 23. 如申請專利範圍第21項所述之雷射裝置，其中前 述單一波長振還雷射係在1.544〜1.552 /i m範圍內產生具有 振盪波長的雷射光；前述波長變換部係產生在與振盪波長 爲ArF準分子雷射之振盪波長略相同波長之193〜194nm範 圍內的8倍高調波。 24. 如申請專利範圍第21項所述之雷射裝置，其中前 述波長變換部具有來自前述基本波及前述基本波之7倍高 調波’藉由產生和頻率而產生前述基本波之8倍高調波之 第1非線形光學結晶。 25. 如申請專利範圍第24項所述之雷射裝置，其中前 述波長變換部’具有：藉由以前述基本波產生2次高調波 而產生2倍高調波之第2非線形光學結晶：藉由以前述基 本波及前述2倍高調波產生和頻率而產生前述基本波的3 倍高調波之第3非線形光學結晶；藉由前述2倍高調波產 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公g ) ------------jk--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 經濟部智慧財產局員工消費合作社印製 AS 46 95 0 1 § D8 _ 六、申請專利柏圍 生之2次高調波而產生前述基本波的4倍高調波之第4非 線形光學結晶；及藉由以前述基本波的3倍高調波及前述 基本波的4倍高調波產生和頻率而產生前述基本波的7倍 高調波之第5非線形光學結晶。 26. 如申請專利範圍第25項所述之雷射裝置，其中前 述第1〜4非線形光學結晶爲LiB3〇5 (LBO)結晶，前述第 5非線形光學結晶爲点-BahCU (BBO)結晶或CsLiB6〇!〇 ( CLBO)結晶。 27. 如申請專利範圍第21項所述之雷射裝置，其中前 述單一波長振盪雷射係在1.51〜1.59/zm範圍內具有振盪 波長之DFB半導體雷射或纖維雷射；前述波長變換部係產 生波長爲151〜159nm範圍內之10倍高調波。 28. 如申請專利範圍第21項所述之雷射裝置，其中前 述單一波長振盪雷射係在1.57〜1.58/zm範圍內產生具有 振盪波長的雷射光；前述波長變換部係產生在與波長爲Fl 雷射之振盪波長略相同之波長之157〜158nm範圍內的1〇 倍高調波。 29 _如申g靑專利圍第1〜7項中之任一項所述之雷射 裝置，其中前述雷射光產生部係產生波長爲l.lum左右的 單一波長的雷射光；前述波長變換部係產生由前述光增幅 器所輸出之前述波長1_1 V m左右的基本波以作爲7倍高調 波的紫外線。 30.如申請專利範圍第29項所述之雷射裝置，其中前 述單一波長振盪雷射係在1.03〜1.12#m範圍內具有振邊 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 κ 297公釐） 痕 < -------------l·^·--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產扃員Η消費合作社印*-衣 AS BS C8 D8 六、申請專利範圍 波長之DFB半導體雷射或纖維雷射；前述波長變換部係產 生波長爲147〜I60nm範圍內之7倍高調波。 31. 如申請專利範圍第29項所述之雷射裝置，其中前 述單一波長振還雷射係在1.099〜1.106“ m範圍內產生具有 振盪波長的雷射光：前述波長變換部係產生在與波長爲Fz 雷射之振盪波長略相同之波長之157〜158nm範圍內的7倍 高調波。 32. 如申請專利範圍第29項所述之雷射裝置，其中前 述單一波長振盪雷射爲鏡摻雜纖維雷射。 33. —種曝光裝置，其特徵係使用申請專利範圔第1〜7 項中之任一項所述之雷射裝置作爲光源。 34. 如申請專利範圍第33項所述之曝光裝置，其更具 有：將前述雷射裝置所射出之紫外線照射於光罩上之照明 光學系統；及將被前述紫外線照射且透過或反射之前述光 罩的圖案像影於基板上之投影光學系統。 35. 如申請專利範圍第34項所述之曝光裝置，其中前 述光增幅器具有複數之纖維光增幅器，並且，前述光增幅 器的輸出端部具有複數之纖維輸出端被複數分割且形成束 狀之複數之輸出群，在前述複數之輸出群中，使用對應於 至少1個輸出群而輸出之紫外線作爲前述曝光裝置之校準 用光源。 36. 如申請專利範圍第34或35項所述之曝光裝置，其 更具有：將光罩之圖案像投影於基板上之投影光學系統； 及照射配置於前述投影光學系統的物體面或像面側之標記 6 -----------^--------Γ --------_ (锖先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 469501 A8 B8 S_ 六、申請專利範圍 圖案之圖案檢出系統。 37. -種曝光裝置，其係將光罩之圖案像轉印於基板上 之曝光裝置，其特徵係具備：具有射出單一波長的雷射光 之雷射裝置；將前述雷射光增幅之第1纖維光增幅器；將 Μ述被增幅之雷射光作複數分歧之光分歧手段：及將前述 複數的分歧光分別增幅之第2纖維光增幅器之光源；以及 將由前述光源所射出之雷射光傳送至曝光裝置之傳送 光學系統。 38. 如申請專利範圍第37項所述之曝光裝置，其更具 備：前述雷射裝置係射出紅外線或可視光，並且將由前述 第2纖維光增幅器所射出之雷射光變換爲紫外線之波長變 換手段。 39. 如申請專利範圍第37或38項所述之曝光裝置，其 中前述光源具有降低前述複數的分歧光的可干擾性之光學 手段。 · 40. —種雷射裝置，其特徵係具備： 產生連續光之光源； 將前述連續之光變換爲脈衝光之光調變器； 將前述脈衝光增幅之第1纖維光增幅器；及 將前述被增幅之脈衝光增幅之第2纖維光增幅器。 41. 如申請專利範圍第40項所述之雷射裝置，其中在 前述第1及第2纖維光增幅器之至少一方的射入側更具備 光分歧手段，被前述光分歧手段複數分割之脈衝光射入配 置在其後段之纖維光增幅器。 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------ik--------訂 --------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 469501 A8 B8 S_ 六、申請專利範圍 42·如申請專利範圍第41項所述之雷射裝置，其更具 備：將前述被分割之複數之脈衝光分別加以延遲，並且射 入配置於前述光分歧手段之後段的纖維光增幅器之延遲手 段。 43.如申請專利範圍第40〜42項中之任一項所述之雷 射裝置’其中前述第2纖維光增幅器爲大模式徑纖維❶ 44·如申請專利範圍第4〇〜42項中之任—項所述之雷 射裝置’其中前述第丨及第2纖維光增幅器分別爲石英纖 維、较酸靆系纖維、及氧化物系纖維之一者。 45. 如申請專利範圍第4〇〜42項中之任一項所述之雷 射裝置’其更具備•前述連續光爲紅外線或可視光，並且 將被前述第2纖維光增幅器所增幅之脈衝光波長變換爲紫 外線之波長變換部。 46. 如申:請專利範圍第45項所述之雷射裝置，其中前 述第2纖維尧增幅器爲ZBLAN纖維。 47. 如申請專利範圍第4〇〜42項中之任一項所述之雷 射裝置’其中在前述第I及第2纖維光增幅器之間配置至 少一第3纖維光增幅器。 48. —種曝光裝置，其特徵係具有申請專利範圍第40〜 42項中之任一項所述之雷射裝置，並且具備：將被前述第 2纖維光增幅器所增幅之脈衝光照射於光罩之照明光學系 統；及調整前述脈衝光之振盪、強度及波長中至少一項之 調整裝置。 49. 如申請專利範圍第48項所述之曝光裝置，其中前 8 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 χ 297公釐） 一4·_ L '~ ------------- ----1----訂—-------- (請先閱讀背面之注意事項再填寫本頁) 經濟邹智慧財產局員工消費合作社印制衣 A8 B8 C8 D8 46 95 0 /、、申請專利範圍 述調整裝置係具有控制施加於前述光調變器之控制脈衝的 振盪與大小之第1控制器。 50. 如申請專利範圍第48或49項所述之曝光裝置’其 中前述調整裝置具有控制前述第1及第2纖維光增幅器之 至少一方之增益的第2控制器。 51. 如申請專利範圍第50項所述之曝光裝置，其中前 述調整裝置具有控制前述光源之溫度的第3控制器。 52. 如申請專利範圍第48項所述之曝光裝置，其更具 備：檢測形成於前述光罩之校準系統：及將前述被增幅之 脈衝光之至少一部份導引至前述校準系統之傳送系統。 53. 如申請專利範圍第52項所述之曝光裝置，其中前 述傳送系統，具有將前述被增幅之脈衝光分別導引至前述 照明光學系統與前述校準系統之第1及第2纖維。 54. 如申請專利範圍第53項所述之曝光裝置，其更具 備··將前述被增幅之脈衝光波長變換爲紫外線之複數的波 長變換部，在前述複數的波長變換部中之第1波長變換部 係設於前述第2纖維光增幅器與前述第1纖維之間，或設 於前述第1纖維與前述照明光學系統之間。 55. 如申請專利範圍第54項所述之曝光裝置，其中前 述第1波長變換部係設於前述第1纖維輿前述照明光學系 統之間，並且與前述照明光學系統之至少一部份保持爲一 體。 56. 如申請專利範圍第55項所述之曝光裝置，其中在 前述複數的波長變換部中之第2波長變換部係設於前述第 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） jk--------訂---------線· (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A3 B8 C8 D8 經濟部智慧財產局員工消費合作杜印製 469501 六、申請專利範圍 2纖維光增幅器與前述第2纖維之間，或設於前述第2纖 維與前述校準系統之間。 57·如申請專利範圍第56項所述之曝光裝置，其中前 述第2波長變換部係設於前述第2纖維與前述校準系統之 間’並且與前述校準系統之至少一部份保持爲一體。 58. 如申請專利範圍第48項所述之曝光裝置，其更具 備：將形成於光罩之圖案之至少一部份投影於基板上之投 影光學系統；及用以將前述圖案全體掃描曝光於前述基板 上，以略對應於前述投影光學系統之投影倍率的速度比， 同時移動前述光罩與基板之驅動裝置。 59. —種曝光方法，其特徵係：將光源所射出之連續光 變換爲脈衝光，同時以複數的纖維光增幅器將前述脈衝光 作複數次增幅，將該被增幅後之脈衝光照射於光罩，同時 透過前述光罩而以前述脈衝光將基板曝光。 60. 如申1請專利範圍第59項所述之曝光方法，其中前 述光源係產生紅外線域或可視域之連續光，前述脈衝光在 照射於前述光罩之前，將前述脈衝光波長變換爲紫外線。 61. 如申請專利範圍第60項所述之曝光方法，其中在 前述基板曝光之前，將前述紫外線之至少一部份照射於前 述光罩上之標記，並檢測該標記之位置資訊。 62. 如申請專利範圍第60項所述之曝光方法，其中調 整前述光源的溫度’並且控制前述紫外線的波長^ 63·.如申請專利範圍第60〜62項中之任一項所述之曝 光方法，其中調整將前述連續光變換爲前述脈衝光之光調 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^ια •为· (請先閱讀背面之注意事項再填寫本頁)Month:] AS; f! IF C3 'D8 6. Patent application scope 1. A laser device characterized by having a single wavelength of laser light having a single wavelength in a wavelength range from the infrared range to the visible range A laser light generating section of a vibrating salt laser; a light amplifier having a fiber optical amplifier for amplifying the laser light generated by the laser light generating section; and using a non-linear optical crystal to convert the wavelength of the amplified laser light into Ultraviolet wavelength conversion unit to generate a single wavelength of ultraviolet light. 2. The laser device according to item 1 of the scope of the patent application, wherein the single-wavelength oscillating laser has an oscillating wavelength control means for controlling the oscillation wavelength of the laser light generated to a certain wavelength. 3. The laser device as described in item 1 of the scope of the patent application, which is more prepared: a light branching means for splitting a plurality of laser beams generated by the aforementioned single-wavelength oscillating laser. 4. The laser device according to item 3 of the scope of the patent application, wherein the optical divergence means includes a beam splitter that divides a plurality of laser light generated by the single-wavelength oscillating laser in parallel and divides, and the beam splitter Fibers of different lengths are set on the injection side. 5. The laser device according to item 4 of the scope of the patent application, wherein the lengths of the aforementioned fibers of different lengths are set to a certain interval between the mutually delayed intervals of the laser light which are juxtaposed and diverged at the output end of the fiber. 6. The laser device according to item 5 of the scope of the patent application, wherein the lengths of the aforementioned fibers having different lengths are set so that the repetition frequency of the laser light that enters the beam splitter is different from that of the beam splitter side by side. J it of the number of divergent light paths -------- ^ --------- (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ Paper The scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 4 6 9 5 0 i Α8 Β8 C8 D8 6. The inverse of the product range of patent application. 7. The laser device according to item 3 of the scope of patent application, wherein the aforementioned optical divergence means has a time division optical divergence means. 8. The laser device according to any one of items 1 to 7 of the scope of the patent application, wherein the output end portion of the optical amplifier provided on the incident side of the wavelength conversion portion, The core is enlarged to form a cone toward the fiber output end surface. 9_ The laser device according to any one of items 1 to 7 of the scope of patent application, wherein the output end portion of the optical amplifier provided on the incident side of the wavelength conversion portion has a fiber output end portion And a window member through which the laser light amplified by the optical amplifier is transmitted. 10. The laser device according to any one of claims 1 to 7, wherein the aforementioned optical amplifier has a bait-doped fiber optical amplifier. 11. The laser device according to any one of the items 1 to 7 of the scope of the patent application, wherein the aforementioned optical amplifier has a fiber optical amplifier made of bait and mirror doped with ytterbium. 12. The laser device according to any one of items 1 to 7 of the scope of patent application, wherein the aforementioned optical amplifier has a plurality of fiber optical amplifiers which respectively increase the plural branched lights divided by the aforementioned optical branching means. Device. 13. The laser device according to item 12 in the scope of the patent application, wherein the aforementioned optical amplifier has a fiber output control means for controlling the intensity of each excitation of the aforementioned plurality of fiber optical amplifiers, so that the output of the aforementioned ultraviolet light becomes predetermined. Light output, or each light output amplified by the aforementioned plural fiber optical amplifiers becomes a predetermined light output β 2 ------------'- ^ ------- -Order ------- line, i „'(锖 Please read the notes on the back before filling this page) Printed on the paper by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the national standard (CNS) A4 Specifications (210 X 297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ 6 9 5 0 ^ as JI B8 ^ _g_ VI. Patent Application Scope 14. The laser device described in item 12 of the patent application scope, The output end of the optical amplifier provided on the incident side of the wavelength conversion section divides the output end of the plurality of fiber optical amplifiers into one or a plurality of output groups and forms each output group into a bundle. . The laser device as described in item 14 of the scope of patent application, wherein the former The output group of the optical amplifier which is divided into a plurality of groups is a first output group formed by bundling one or a few fiber output ends into a bundle; and the fiber output ends remaining after removing the aforementioned first output group It is divided into one or a plurality of output groups to form a bundled second or a plurality of output groups. 16. The laser device according to item 14 of the scope of patent application, wherein The output end portion of the optical amplifier on the incident side of the unit enables each of the output groups to be provided on the fiber output end portions formed in a bundle shape by each of the output groups, and to increase the amplitude of the fiber amplified by the optical amplifier. Window parts through which laser light passes. 17. The laser device as described in item 14 of the patent scope of claim 1, wherein the aforementioned wavelength conversion section is provided in the output group of each of the optical amplifiers. The laser device according to any one of items 1 to 7, further comprising a condensing optical system for condensing laser light emitted from the optical amplifier and entering the non-linear optical crystal on the input side of the wavelength conversion section. Component 19. The laser device according to item 18 of the scope of patent application, wherein the aforementioned condensing optical element is provided in the output group of each of the optical amplifiers. 20. The laser device according to item 18 of the scope of patent application, where The fiber output end of each of the aforementioned optical amplifiers is provided with the aforementioned condensing optical element 3 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 χ 297 male cage) j " -------- Order *- ------- line (please read the precautions on the back before filling this page) 8 858 ABaD 469501 6. Apply for patent scope. 21. The laser device according to any one of items 1 to 7 of the scope of patent application, wherein the aforementioned laser light generating unit generates laser light having a single wavelength of about 1.5 / zm; the aforementioned wavelength converting unit will be changed by the aforementioned The fundamental wave of the aforementioned wavelength of about 1.5 ^ m output by the optical amplifier produces ultraviolet rays which are 8-times or 10-times high-modulation waves. 22. The laser device according to item 21 of the scope of the patent application, wherein the aforementioned single-wavelength oscillating laser is a DFB. Semiconductor laser or fiber laser that maintains the oscillation wavelength in the range of 1.51 to 1.59 / zm; the aforementioned wavelength conversion The system generates 8 times higher-frequency waves in the range of 189 ~ 199nm. 23. The laser device according to item 21 in the scope of the patent application, wherein the aforementioned single-wavelength-reduction laser system generates laser light having an oscillation wavelength within a range of 1.544 to 1.552 / im; the aforementioned wavelength conversion unit generates an The wavelength is 8 times the high-frequency wave in the range of 193 ~ 194nm, which is slightly the same as the oscillation wavelength of ArF excimer laser. 24. The laser device according to item 21 of the scope of the patent application, wherein the wavelength conversion unit has a 7-times high-frequency wave from the fundamental wave and a 7-times high-frequency wave from the fundamental wave. The first non-linear optical crystal. 25. The laser device according to item 24 of the scope of the patent application, wherein the aforementioned wavelength conversion section has: a second non-linear optical crystal that generates a twice-high-order wave by generating the second-order high-order wave by the aforementioned fundamental wave: by 3rd non-linear optical crystal with 3 times higher harmonic wave generated by the aforementioned fundamental wave and 2 times higher harmonic wave generation and frequency; produced by the above 2 times higher harmonic wave 4 This paper is in accordance with Chinese National Standard (CNS) A4 (210 X 297g) ------------ jk -------- Order --------- line (Please read the precautions on the back before filling in this Page) Consumption Cooperation of Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Du Duan printed AS 46 95 0 1 Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The fourth non-linear optical crystal of the double harmonic wave; and the fifth non-linear optical crystal of the seventh harmonic wave of the fundamental wave by generating the third harmonic wave of the fundamental wave and the fourth harmonic wave generation and frequency of the fundamental wave. 26. The laser device according to item 25 of the scope of the patent application, wherein the aforementioned first to fourth non-linear optical crystals are LiB305 (LBO) crystals, and the aforementioned fifth non-linear optical crystals are dot-BahCU (BBO) crystals or CsLiB6 〇 (〇) (CLBO) crystals. 27. The laser device according to item 21 of the scope of the patent application, wherein the single-wavelength oscillating laser is a DFB semiconductor laser or fiber laser having an oscillating wavelength in the range of 1.51 to 1.59 / zm; the aforementioned wavelength conversion unit is Generates 10 times higher-frequency waves in the range of 151 ~ 159nm. 28. The laser device according to item 21 of the scope of the patent application, wherein the aforementioned single-wavelength oscillating laser system generates laser light having an oscillating wavelength in the range of 1.57 to 1.58 / zm; the aforementioned wavelength conversion unit generates Fl laser's oscillation wavelength is slightly higher than 10 times the high-frequency wave in the range of 157 ~ 158nm. 29 _ The laser device according to any one of items 1 to 7 in the patent application, wherein the aforementioned laser light generating unit generates laser light having a single wavelength of about l.lum; the aforementioned wavelength converting unit The system generates a fundamental wave with a wavelength of about 1 to 1 V m output by the optical amplifier as a 7-fold high-frequency ultraviolet light. 30. The laser device according to item 29 of the scope of the patent application, wherein the aforementioned single-wavelength oscillating laser system has a vibrating edge within a range of 1.03 to 1.12 # m. 5 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 κ 297 mm) marks < ------------- l · ^ · -------- Order --------- (Please read the note on the back first Please fill in this page for further information.) Printed by the Intellectual Property Department of the Ministry of Economic Affairs and the Consumer Cooperative Association *-clothing AS BS C8 D8 VI. DFB semiconductor laser or fiber laser with a patent application wavelength; the aforementioned wavelength conversion unit generates a wavelength of 147 ~ I60nm 7 times higher range within the range. 31. The laser device according to item 29 in the scope of the patent application, wherein the aforementioned single-wavelength-reduction laser system generates laser light having an oscillating wavelength in the range of 1.099 to 1.106 "m: the aforementioned wavelength conversion unit generates It is 7 times higher modulation wave in the range of 157 ~ 158nm of Fz laser with the same oscillation wavelength. 32. The laser device according to item 29 of the patent application scope, wherein the aforementioned single-wavelength oscillation laser is mirror-doped Fiber laser. 33. An exposure device characterized by using the laser device described in any one of items 1 to 7 of the patent application as a light source. 34. As described in item 33 of the scope of patent application The exposure device further includes: an illumination optical system for irradiating the ultraviolet light emitted from the laser device on the photomask; and a projection optic for projecting a pattern image of the photomask irradiated with the ultraviolet light and transmitted or reflected on the substrate. 35. The exposure device according to item 34 of the scope of patent application, wherein the optical amplifier has a plurality of fiber optical amplifiers, and the output end of the optical amplifier has a plurality of optical amplifiers. The dimensional output end is plurally divided and formed into a bundled plural output group. In the aforementioned plural output group, the ultraviolet light output corresponding to at least one output group is used as the light source for the calibration of the aforementioned exposure device. The exposure device according to the item 34 or 35, further comprising: a projection optical system for projecting a pattern image of a photomask on a substrate; and a mark 6-which illuminates an object surface or an image surface side of the projection optical system. ---------- ^ -------- Γ --------_ (锖 Please read the notes on the back before filling in this page) This paper size applies Chinese national standards ( CNS) A4 specification (210 X 297 mm) 469501 A8 B8 S_ 6. Pattern detection system for patent application pattern 37.-An exposure device, which is an exposure device that transfers the pattern image of a photomask onto a substrate Its features are: a laser device having a single wavelength of laser light; a first fiber optical amplifier that amplifies the aforementioned laser light; a means for diverging the aforesaid amplified laser light by a plurality of optical divergence means: and The number of divergent divergent light increases by 2 A light source of a dimensional optical amplifier; and a transmission optical system for transmitting laser light emitted by the aforementioned light source to an exposure device. 38. The exposure device described in item 37 of the scope of patent application, further comprising: the aforementioned laser device emits Infrared or visible light, and a wavelength conversion means for converting laser light emitted by the aforementioned second fiber optical amplifier to ultraviolet rays. 39. The exposure device according to item 37 or 38 of the scope of patent application, wherein the light source has Optical means for interfering with plural branched light. · 40. —A laser device characterized by: a light source for generating continuous light; a light modulator for converting the aforementioned continuous light into pulsed light; A first fiber optical amplifier that amplifies the light; and a second fiber optical amplifier that amplifies the amplified pulsed light. 41. The laser device according to item 40 of the scope of the patent application, wherein an incident side of at least one of the first and second fiber optical amplifiers further includes an optical branching means, and a plurality of pulses divided by the optical branching means. The light enters the fiber optical amplifier which is arranged at the subsequent stage. 7 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) ------------ ik -------- Order -------- (Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 469501 A8 B8 S_ VI. Patent Application Scope 42. The laser device described in item 41 of the patent application scope, which It further includes a delaying means for delaying the divided plurality of pulsed lights separately, and injecting the pulsed light into a fiber optical amplifier that is arranged after the optical diverging means. 43. The laser device according to any one of items 40 to 42 of the scope of patent application, wherein the aforementioned second fiber optical amplifier is a large-mode fiber ❶ 44. As described in the scope of patent application No. 40 to 42 The laser device of any of the items described in the above item, wherein the aforementioned first and second fiber optical amplifiers are respectively one of a quartz fiber, a relatively acid fiber, and an oxide fiber. 45. The laser device according to any one of claims 40 to 42 in the scope of the patent application, which is further equipped with the aforementioned continuous light is infrared or visible light, and will be amplified by the aforementioned second fiber optical amplifier. A wavelength conversion unit that converts the pulsed light wavelength into ultraviolet light. 46. As claimed: the laser device described in item 45 of the patent scope, wherein the aforementioned second fiber amplifier is ZBLAN fiber. 47. The laser device 'according to any one of claims 40 to 42 in the scope of the patent application, wherein at least one third fiber optical amplifier is arranged between the aforementioned first and second fiber optical amplifiers. 48. An exposure device characterized by having the laser device described in any one of items 40 to 42 of the scope of patent application, and further comprising: irradiating the pulsed light amplified by the aforementioned second fiber optical amplifier to An illumination optical system of the photomask; and an adjusting device for adjusting at least one of the oscillation, intensity, and wavelength of the aforementioned pulsed light. 49. The exposure device described in item 48 of the scope of patent application, in which the first 8 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (21〇χ 297 mm)-4 · _L '~ ----- -------- ---- 1 ---- Order ---------- (Please read the notes on the back before filling out this page) A8, B8, C8, D8, 46, 95, 0. The adjustment device described in the scope of patent application is a first controller that controls the oscillation and magnitude of the control pulses applied to the aforementioned optical modulator. 50. The exposure device according to item 48 or 49 of the scope of the patent application, wherein the adjustment device includes a second controller that controls the gain of at least one of the first and second fiber optical amplifiers. 51. The exposure apparatus according to item 50 of the scope of patent application, wherein the aforementioned adjustment device has a third controller that controls the temperature of the light source. 52. The exposure device described in item 48 of the scope of patent application, further comprising: detecting a calibration system formed in the aforementioned photomask; and transmitting at least a part of the amplified pulsed light to the aforementioned calibration system. system. 53. The exposure device according to item 52 of the scope of the patent application, wherein the aforementioned transmission system has first and second fibers that guide the aforementioned amplified pulsed light to the aforementioned illumination optical system and the aforementioned calibration system, respectively. 54. The exposure device described in item 53 of the scope of patent application, further comprising: a wavelength conversion unit that converts the wavelength of the amplified pulse light into a plurality of ultraviolet rays, and a first wavelength in the plurality of wavelength conversion units. The conversion unit is provided between the second fiber optical amplifier and the first fiber, or between the first fiber and the illumination optical system. 55. The exposure apparatus according to item 54 of the scope of patent application, wherein the first wavelength conversion unit is disposed between the first fiber and the aforementioned illumination optical system, and remains at least a part of the aforementioned illumination optical system as One. 56. The exposure device described in item 55 of the scope of patent application, wherein the second wavelength conversion section of the plurality of wavelength conversion sections is provided in the aforementioned ninth paper standard applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) jk -------- Order --------- line · (Please read the notes on the back before filling out this page) Printed by A3, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs B8 C8 D8 Consumer cooperation of Intellectual Property Bureau of the Ministry of Economic Affairs, Du Printing 469501 6. Patent application scope 2 Fiber optical amplifier and the second fiber, or between the second fiber and the calibration system. 57. The exposure apparatus according to item 56 of the scope of patent application, wherein the second wavelength conversion section is disposed between the second fiber and the calibration system 'and is integrated with at least a part of the calibration system. 58. The exposure device described in item 48 of the scope of patent application, further comprising: a projection optical system that projects at least a portion of a pattern formed on the photomask onto a substrate; and scans and exposes the entire pattern on the substrate. On the substrate, the driving device of the photomask and the substrate is simultaneously moved at a speed ratio slightly corresponding to the projection magnification of the projection optical system. 59. An exposure method, characterized in that the continuous light emitted from the light source is converted into pulsed light, and the aforementioned pulsed light is amplified a plurality of times by a plurality of fiber light amplifiers, and the amplified pulsed light is irradiated to the pulsed light. The photomask passes through the photomask and exposes the substrate with the pulse light. 60. The exposure method described in claim 59 of claim 1, wherein said light source generates continuous light in an infrared or visible range, and said pulsed light converts said pulsed light wavelength to ultraviolet light before irradiating said mask . 61. The exposure method according to item 60 of the scope of patent application, wherein before the substrate is exposed, at least a part of the ultraviolet light is irradiated to a mark on the mask and the position information of the mark is detected. 62. The exposure method according to item 60 of the scope of patent application, wherein the temperature of the aforementioned light source is adjusted and the wavelength of the aforementioned ultraviolet light is controlled ^ 63. The exposure as described in any one of the scope of patent application 60 to 62 Method, which adjusts the light tone of converting the aforementioned continuous light into the aforementioned pulsed light 10 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ^ ια • is · (Please read the precautions on the back before (Fill in this page) 46 95 0 1 as C8 _____ D8 六、申請專利範圍 變器’及控制前述複數的纖維光增幅器之至少其中之一而 調整前述紫外線的強度。 (請先閱讀背面之注意事項再填寫本頁) 64. 如申請專利範圍第63項所述之曝光方法，其中控 制被前述光調變器所限定之前述脈衝光之重複頻率，並調 整前述紫外線之振盪間隔》 65. 如申請專利範圍第63項所述之曝光方法，其中控 制配置於前述光調變器與前述複數的纖維光增幅器其中之 一之間且將前述脈衝光時分割爲複數之時分割光分歧手段 ’並調整前述紫外線之振盪間隔。 66. —種微元件製造方法，其特徵係：使用如申請專利 範圍第59〜62項中之任一項所述之曝光方法，並包含將元 件圖案轉印於前述基板上之工程。 67. 如申請專利範圍第40〜42項中之任一項所述之雷 射裝置’其中前述光調變器係藉由其電流控制使前述光源 脈衝振盪，筒時以光調變元件將由前述光源所振盪之脈衝 光之脈衝振幅變小。 經濟部智慧財產局員工消費合作社印製 68_如申請專利範圍第40〜42項中之任一項所述之雷 射裝置，其更具備：用以補償由前述第2纖維光增幅器所 輸出之脈衝光的輸出變動，而控制前述光源與前述光調變 器之至少其中之一之控制裝置。 69.如申請專利範圍第48項所述之曝光裝置，其中前 述調整裝置係進行前述光源之電流控制，使前述光源脈衝 振盪。 11 本紙張尺度適用中國國家標準（CNS)A4规格（210 X 297公釐）46 95 0 1 as C8 _____ D8 6. Scope of Patent Application Transformer 'and at least one of the aforementioned plurality of fiber optical amplifiers to adjust the intensity of the aforementioned ultraviolet rays. (Please read the precautions on the back before filling this page) 64. The exposure method described in item 63 of the scope of patent application, wherein the repetition frequency of the aforementioned pulsed light limited by the aforementioned light modulator is controlled, and the aforementioned ultraviolet light is adjusted 65. The exposure method according to item 63 of the scope of patent application, wherein the control is arranged between the aforementioned optical modulator and one of the aforementioned plural fiber optical amplifiers and the aforementioned pulsed light time is divided into plural numbers At this time, the light branching means is divided and the oscillation interval of the aforementioned ultraviolet rays is adjusted. 66. A method for manufacturing a micro-device, characterized by using the exposure method described in any one of items 59 to 62 of the scope of patent application, and including a process of transferring a component pattern onto the aforementioned substrate. 67. The laser device according to any one of claims 40 to 42 of the scope of the application for patent, wherein the aforementioned light modulator oscillates the aforementioned light source by means of its current control, and the optical modulation element will be controlled by the aforementioned The pulse amplitude of the pulsed light oscillated by the light source becomes smaller. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 68_ The laser device described in any one of the scope of applied patents Nos. 40 ~ 42, which is further provided with: to compensate the output from the aforementioned second fiber optical amplifier A control device for controlling at least one of the light source and the light modulator by changing the output of the pulsed light. 69. The exposure device according to item 48 of the scope of the patent application, wherein the aforementioned adjustment device performs current control of the aforementioned light source to cause the aforementioned light source to oscillate in pulses. 11 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
TW88107680A 1998-05-13 1999-05-12 Laser apparatus, exposure apparatus and method, and device manufacturing method TW469501B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP13058098 1998-05-13
JP22733398 1998-08-11
JP31114798 1998-10-30
JP06325699A JP4232130B2 (en) 1998-03-11 1999-03-10 Laser apparatus and light irradiation apparatus and exposure method using this laser apparatus

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